Focused Ion Beam Equipment

Abstract

To provide a metal pattern inspection method and a focused ion beam device that can easily identify a disconnection defect position and a short circuit position of a metal pattern.SOLUTION: A pulsed voltage is applied to a metal pattern 38, a period of the pulsed voltage is set shorter than a scanning period of a focused ion beam, and from among metal patterns separated by a broken portion in a secondary charged particle image, only a region corresponding to a portion where the pulsed voltage is applied is formed as a region 38A of a first pattern reflecting a time-varying surface potential, a boundary region with a region 38C of a second pattern, which depends on the surface potential that does not change with time, is detected as a separation portion 38B, and a wire break or short circuit in the metal pattern is detected on the basis of the presence or absence of the separation portion 38B.SELECTED DRAWING: Figure 3-1

Description

[Technical field]

[0001] The present invention relates to a metal pattern inspection method and a focused ion beam apparatus. [Background technology]

[0002] Conventionally, a method is known in which a focused ion beam device is used to scan a wire while applying an AC signal to the wire, detect secondary charged particles, and display the surface potential distribution as an image (see, for example, Patent Document 1). According to this conventional method, it is possible to analyze the cause of the wire or short circuit defect using the obtained image. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 5-160212 Summary of the Invention [Problem to be solved by the invention]

[0004] However, when inspecting for wiring defects using the above-mentioned conventional method, if a break occurs in the middle of the wiring, the surface potential of the parts other than the break to which the applied voltage is applied becomes the applied voltage, and the amount of secondary electrons emitted corresponds to the surface potential, while the surface potential of the break part is unrelated to the applied voltage due to the degree of the break (resistance value), and therefore the amount of secondary electrons emitted differs from that of the parts other than the break. This results in an image with contrast based on the difference in the amount of secondary electrons emitted between the break part and the other parts. However, in such conventional inspections for wiring defects, the contrast between the presence or absence of a break may be low depending on the state of the break part, making it difficult to confirm the location of the defect.

[0005] The present invention has been made in consideration of the above problems, and aims to provide an inspection method and a focused ion beam device that can easily identify the location of a break defect in a metal pattern and easily detect a short circuit in the metal pattern. [Means for solving the problem]

[0006] In order to solve the above-mentioned problems and achieve the object, an aspect of the present invention is a method for inspecting a metal pattern, which includes applying a voltage to a metal pattern of a substrate to be inspected, the metal pattern being formed along its surface, periodically and sequentially scanning an inspection area including the metal pattern over the entire inspection area with a focused ion beam in a raster scan manner, displaying a secondary charged particle image of the inspection area based on the intensity of secondary charged particles emitted from the substrate to be inspected, and detecting breaks or shorts in the metal pattern from the secondary charged particle image, characterized in that a time-varying pulsed voltage is applied to the metal pattern, and the period of the pulsed voltage is set to be shorter than the vertical or horizontal scanning period of the focused ion beam.

[0007] In the above aspect, a first pattern that depends on the pulsed voltage and changes over time is displayed in a portion of the metal pattern to which the pulsed voltage is applied in the secondary charged particle image, and a second pattern that depends on a potential that does not change over time is displayed in a portion of the metal pattern to which the pulsed voltage is not applied, It is preferable that a boundary portion between two regions of the first pattern and the second pattern is detected as a separation portion, and a break in the metal pattern is detected based on the presence or absence of the separation portion.

[0008] In the above-mentioned aspect, it is preferable that in the secondary charged particle image, a first pattern dependent on the time-varying pulsed voltage is displayed in the portion of the metal pattern to which the pulsed voltage is applied, and a second pattern dependent on a potential that does not change over time is displayed in the portion of the metal pattern to which the pulsed voltage is not applied, and the design pattern image and the secondary charged particle image, which are electrically independent from each other, are compared to detect short-circuited portions.

[0009] In the above aspect, it is preferable that the scanning direction of the focused ion beam is set to a direction perpendicular to the extending direction of the metal pattern.

[0010] Another aspect of the present invention is a focused ion beam apparatus comprising: a focused ion beam optical system which irradiates a substrate to be inspected, the substrate having a metal pattern formed along its surface, with a focused ion beam; a secondary charged particle detector which detects intensity of secondary charged particles emitted from the substrate to be inspected in association with irradiation with the focused ion beam; an image generating unit which displays a secondary charged particle image of the substrate to be inspected based on detection values ​​from the secondary charged particle detector; and a mechanism which can apply a voltage to the substrate to be inspected, wherein the focused ion beam optical system is set to periodically and sequentially scan an entire inspection area including the metal pattern on the substrate to be inspected with the focused ion beam in a raster scan manner, and is set to apply a time-varying pulsed voltage to the metal pattern, the period of the pulsed voltage being set shorter than a vertical scanning period of the focused ion beam, and the image generating unit is The secondary charged particle image is characterized in that a first pattern that depends on the time-varying pulsed voltage is displayed in a portion of the metal pattern to which the pulsed voltage is applied, and a second pattern that depends on a potential that does not change over time is displayed in a portion of the metal pattern to which the pulsed voltage is not applied.

[0011] In the above aspect, it is preferable that the scanning direction of the focused ion beam is set to a direction perpendicular to the extending direction of the metal pattern.

[0012] In the above aspect, it is preferable that the apparatus further includes a film formation control unit that controls the supply of a deposition gas to the broken portion of the metal pattern detected based on the secondary charged particle image created by the image generation unit, and the focused ion beam optical system decomposes the deposition gas to the broken portion by irradiating the focused ion beam to deposit a repair CVD film.

[0013] In the above aspect, it is preferable that the focused ion beam optical system is capable of irradiating a short-circuited portion of the metal pattern detected based on the secondary charged particle image created by the image generating unit with the focused ion beam, and removing the short-circuited portion by sputtering.

[0014] In the above aspect, it is preferable that the mechanism capable of applying a voltage to the substrate to be inspected includes a probing mechanism that applies the pulse-like voltage to the metal pattern. Effect of the Invention

[0015] According to the present invention, it is possible to realize a metal pattern inspection method and a focused ion beam apparatus that can easily identify the position of a disconnection defect in a metal pattern and also detect a short circuit. [Brief description of the drawings]

[0016] [Figure 1] FIG. 1 is a cross-sectional view showing a schematic configuration of a main part of a focused ion beam apparatus according to a first embodiment of the present invention. [Diagram 2] FIG. 2 is a perspective view showing the method for inspecting a metal pattern according to the first embodiment of the present invention. [Figure 3-1] FIG. 3-1 is an explanatory plan view showing an inspection area and a scanning direction of a focused ion beam in the metal pattern inspection method according to the first embodiment of the present invention. [Figure 3-2] FIG. 3-2 relates to the metal pattern inspection method according to the first embodiment of the present invention and is a diagram showing the raster scan voltage (X) in the X direction and its period Tx. [Figure 3-3] FIG. 3-3 is a diagram showing the scanning direction raster scan voltage (Y) in the Y direction and its period Ty, in relation to the metal pattern inspection method according to the first embodiment of the present invention. [Diagram 3-4] FIG. 3-4 is a diagram showing the probing voltage (Vp) and its period TVp in the metal pattern inspection method according to the first embodiment of the present invention. [Figure 4-1]FIG. 4-1 is a diagram showing a secondary charged particle image obtained by the metal pattern inspection method according to the first embodiment of the present invention. [Figure 4-2] FIG. 4-2 is a diagram showing a secondary charged particle image of a comparative example. [Figure 4-3] FIG. 4-3 is an explanatory diagram showing design patterns that are arranged adjacent to each other and are electrically independent from each other. [Figure 4-4] FIG. 4-4 is an explanatory diagram showing wiring portions corresponding to the electrically independent design patterns shown in FIG. 4-3. [Diagram 5] FIG. 5 is a flowchart showing a control method for detecting a break in a wiring and repairing the break in the wiring in the focused ion beam apparatus according to the first embodiment of the present invention. [Figure 6] FIG. 6 is a cross-sectional view showing a schematic configuration of a main part of a focused ion beam apparatus according to a second embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0017] The metal pattern inspection method according to the present invention can be applied to the detection of disconnections or short circuits in metal patterns such as wiring in semiconductor devices, wiring in flat panel displays (FPDs), and mask patterns in photomasks. The focused ion beam device according to the present invention detects secondary charged particles to generate a secondary charged particle image for use in disconnection detection, and also has a function of removing an insulating film on a metal pattern, a function of forming a CVD film, and a probing mechanism for applying a voltage to the metal pattern.

[0018] Hereinafter, the details of the metal pattern inspection method for disconnection or short circuit and the focused ion beam device according to the embodiment of the present invention will be described with reference to the drawings. Note that the drawings are schematic, and the dimensions, dimensional ratios, numbers, shapes, etc. of each component are different from the actual ones. Also, there are parts in which the dimensional relationships, ratios, and shapes differ between the drawings.

[0019] [First embodiment] (Schematic configuration of focused ion beam device) Before describing the metal pattern inspection method, a focused ion beam apparatus for carrying out this method will be described.

[0020] 1 shows a schematic configuration of a focused ion beam device 1 according to a first embodiment. The focused ion beam device 1 includes a differential exhaust device 2, a focused ion beam column (hereinafter referred to as an FIB column) 3, a substrate support stage 4 on which a substrate 30 to be inspected is placed, a lifting means 5, a movement control unit 20, a differential exhaust control unit 21, an image generating unit 22, a film formation control unit 23, and an FIB control unit 24.

[0021] 2, the substrate 30 to be inspected in this embodiment includes a plurality of parallel wiring portions 34-42 on the surface of an insulating substrate 31 made of, for example, SiO2. These wiring portions 34-42 are metal patterns that are targets for detecting broken or shorted portions by the focused ion beam device 1.

[0022] 2 is a sample for explanation, and wiring section 35 has a separation portion (hereinafter, referred to as a disconnection portion) 35B in the middle, and is divided into portions 35A and 35C. Similarly, wiring sections 38 and 41 also have disconnection portions 38B and 41B in the middle, and are divided into portions 38A and 41A and portions 38C and 41C. Also, wiring section 36 has disconnection portion 36B in the middle. Similarly, wiring sections 39 and 42 also have disconnection portions 39B and 42B in the middle. Of course, in normal inspection, the substrate 30 to be inspected is one in which the presence or absence of a disconnection defect has not been determined.

[0023] The substrate support stage 4 is adapted to support the substrate 30 to be inspected while it is placed thereon. The substrate support stage 4 is adapted to be moved in the X and Y directions by a movement control unit 20 controlling a driving means (not shown).

[0024] 1, the differential pumping device 2 includes a head unit 6. The head unit 6 is configured of a disk-shaped metal plate with an area that is very small compared to the area of ​​the substrate 30 to be inspected. The head unit 6 can face any area of ​​the substrate 30 to be inspected by moving the substrate support stage 4 in the XY directions. The differential pumping device 2 is controlled by a differential pumping control unit 21.

[0025] Three annular grooves 7A, 7B, and 7C are formed concentrically (on concentric circles) on the underside of the head unit 6. A deposition gas delivery unit 11 is connected to the innermost annular groove 7A of the multiple annular grooves 7A, 7B, and 7C in the head unit 6 via a deposition gas supply pipe 10. This deposition gas delivery unit 11 is controlled by a film formation control unit 23.

[0026] A vacuum pump 9 is connected to the annular grooves 7B and 7C via an exhaust pipe 8. The vacuum pump 9 is controlled by a differential exhaust control unit 21. The head unit 6 has a function of maintaining a high vacuum state below the center of the head unit 6 by sucking air from the annular grooves 7B and 7C with the lower surface facing the substrate 30 to be inspected. In this state, a deposition gas is supplied from the annular groove 7A, making it possible to perform CVD film formation for repair on, for example, broken parts 35B, 36B, 38B, 39B, 41B, 42B shown in FIG. 2.

[0027] 1, the FIB column 3 is installed on the upper surface side of the head unit 6, and is connected with its tip embedded in the central opening of the head unit 6. An elevation means 5 for raising and lowering the FIB column 3 and the differential exhaust device 2 is provided at the upper end of the FIB column 3. The elevation means 5 is supported on the support frame side (not shown). This elevation means 5 has the function of raising and lowering the FIB column 3 and the differential exhaust device 2. This elevation means 5 is controlled by the movement control unit 20 described above.

[0028] The FIB column 3 includes a lens barrel 12 and a focused ion beam optical system 13 built in the lens barrel 12. A focused ion beam Ib is emitted from the tip of the FIB column 3 toward the surface of the substrate 30 to be inspected. The focused ion beam optical system 13 includes an ion source 14, a focusing lens 15, an aperture 16, a deflector 17, and an objective lens 18. The deflector 17 is controlled by the FIB control unit 24 to periodically scan an inspection area A (see FIG. 2) with the beam spot of the focused ion beam Ib in a predetermined scanning direction S (see FIG. 2) by a raster scan method.

[0029] A secondary charged particle detector 19 made of, for example, a scintillator is provided at the bottom of the lens barrel 12 and detects the intensity of secondary charged particles emitted from the inspected substrate 30 side in association with irradiation with the focused ion beam Ib. The secondary charged particle detector 19 is connected to an image generating unit 22. The image generating unit 22 can generate and display the surface potential distribution of the inspected substrate 30 as a secondary charged particle image based on the detection value from the secondary charged particle detector 19.

[0030] 1, a probing mechanism is provided at the bottom of the lens barrel 12, in which a voltage application probe 25 can be extended and retracted toward the substrate 30 (in the direction of advance and retreat indicated by the arrow R in the figure) as a mechanism for applying a voltage to the substrate 30. In this embodiment, the voltage application probe 25 is connected to a pulse power supply 44, and is set so as to be in contact with and electrically connectable to the wiring portions 34-42 of the substrate 30. In this manner, a voltage can be applied to the wiring portions 34-42 by using the voltage application probe 25.

[0031] In this embodiment, the period of the pulsed voltage (hereinafter also referred to as the pulse voltage or the probing voltage) is set shorter than the vertical (y-direction) scanning period of the raster scan method. For this reason, in this embodiment, as shown in FIG. 2 and FIG. 4-1, the pulse voltage is applied only to, for example, the portion 38A of the wiring portion 38 separated by the disconnection portion 38B in the secondary charged particle image. Since the surface potential changes with time only in this portion 38A, it is set to be displayed as a striped first pattern. That is, since the surface potential does not change with time in the portion 38C not reached by the pulse voltage from the voltage application probe 25, an image is displayed as a monotone second pattern. Such a clear difference in the display state due to the disconnection is also the same in other wiring portions where disconnection portions have occurred.

[0032] (Metal pattern inspection method and function / operation) Next, a method and operation of inspecting a metal pattern on a substrate 30 to be inspected will be described using the focused ion beam device 1 according to the first embodiment of the present invention. The focused ion beam device 1 according to this embodiment operates based on the flowchart shown in FIG.

[0033] First, the substrate 30 to be inspected is placed and fixed on the substrate support stage 4 of the focused ion beam device 1. The substrate support stage 4 is controlled by a control signal from the movement control unit 20 to relatively move the FIB column 3 so that the focused ion beam Ib can be irradiated onto the unprocessed inspection region A, as shown in FIG. 2 (step S1).

[0034] As shown in FIG. 1, the voltage application probe 25 is extended in the forward and backward direction R (indicated by the arrow) and, as shown in FIG. 2, is connected to any one of the wiring portions 34 to 42 (step S2).

[0035] A pulse voltage is applied to the voltage application probe 25 (step S3). Note that a pulse voltage may already be applied to the voltage application probe 25 in the process of step S2.

[0036] The beam spot of the focused ion beam Ib is raster scanned within the inspection area A. At this time, the period of the pulse voltage is set shorter than the scanning period (image sweep period) in the vertical direction (Y direction). By performing the raster scan in this manner, a secondary charged particle image is created by the image generating unit 22 based on the detection value obtained from the secondary charged particle detector 19 (step S4).

[0037] In the above-mentioned arbitrary wiring part (wiring part 38 in FIG. 2), a region of the first pattern that changes with time and a region of the second pattern that does not change with time are identified in the secondary charged particle image (step S5). If there is no region of the second pattern (monotone pattern) that does not change with time in the secondary charged particle image, return to the start.

[0038] If there is a region of the second pattern that does not change over time in the secondary charged particle image, the region between the region of the first pattern and the region of the second pattern is identified as a disconnection portion (step S6).

[0039] The identified broken portion is repaired using the focused ion beam optical system 13 (step S7). Specifically, the deposition gas supply unit 11 is controlled by the film formation control unit 23 to supply the deposition gas to the annular groove 7A, and the deposition gas is decomposed by the focused ion beam Ib to perform CVD film formation.

[0040] It is determined whether or not there is an inspection area A remaining as an unprocessed observation area (step S8).

[0041] If there is no unprocessed inspection area A as an observation area, the process ends. If there is an unprocessed inspection area A, the process returns to the start.

[0042] (Conditions for creating the first pattern) As shown in FIG. 3-1, in the present embodiment, in the inspection region A, a periodic raster scan is performed in the scanning direction of the focused ion beam Ib as the X direction (the direction indicated by "scan X" in the figure). FIG. 3-2 shows the raster scan voltage (X) in the X direction (horizontal direction) and its period Tx in the raster scan. FIG. 3-3 shows the raster scan voltage (Y) in the Y direction (vertical direction) and its period Ty in the raster scan. FIG. 3-4 shows the probing voltage (Vp) applied to the voltage application probe 25 and its period TVp. In the present embodiment, for example, focusing on the wiring portion 38, it is set such that the extending direction of the wiring is the Y direction (the direction indicated by "scan Y" in FIG. 3-1). In the present embodiment, the case where the extending direction of the wiring is the Y direction has been described as an example, but it is not limited to the Y direction and any direction may be used. Also, in the present embodiment, each of the above periods is set to satisfy the relationship of "Tx < TVp < Ty".

[0043] Since the period TVp of the probing voltage is set shorter than the Y-direction scanning period (Ty) of the raster scan, as shown in FIG. 3-1, as the scanning line of the focused ion beam Ib in the X direction moves in the Y direction, the height of the probing voltage repeats low (L) and high (H). Since the pulse voltage is applied only to the portion 38A that is separated by the disconnection portion 38B and connected to the voltage application probe 25, only the portion 38A becomes a region of the first pattern that is displayed in a striped pattern repeating bright and dark regions alternately. That is, in the portion 38C where the pulse voltage from the voltage application probe 25 does not reach, since the surface potential does not change with time, in the secondary charged particle image, as shown in FIGS. 3-1 and 4-1, it becomes a monotone image.

[0044] (Effect of Metal Pattern Inspection Method and Focused Ion Beam Apparatus) In this embodiment, as shown in Fig. 4-1, the parts of the wiring parts 34 to 41 to which the probing voltage (pulse voltage) is applied are displayed in a first striped pattern, and the parts not covered by the probing voltage (pulse voltage) are displayed in a second pattern that is not striped, so that wiring parts with disconnections can be easily identified. In contrast, in a secondary charged particle image obtained without applying a voltage to the metal pattern as in the comparative example shown in Fig. 4-2, all wiring parts are displayed in monotone, so that all wiring parts must be checked one by one, and it is not easy to find disconnections.

[0045] In addition, in this embodiment, by using the focused ion beam device 1, it is possible to easily identify a short-circuited portion by comparing a design pattern image with an actual secondary charged particle image displayed in the actual first pattern. That is, as shown in FIG. 4-3, electrically independent design pattern images are prepared in advance. FIG. 4-3 shows a part of the design pattern image, a design pattern 45P and a design pattern 46P which are adjacent to each other and electrically independent. FIG. 4-4 shows an actual wiring portion (metal pattern) 45 and a wiring portion (metal pattern) 46 corresponding to the design pattern 45P and the design pattern 46P in FIG. 4-3. As shown in FIG. 4-4, when the voltage application probe 25 is connected only to the wiring portion 45, if the wiring portion 46 is also displayed in the striped first pattern, a short-circuited portion 47 can be detected by taking the difference from the design pattern image shown in FIG. 4-3.

[0046] Thus, according to this embodiment, when the striped first pattern portion in the secondary charged particle image extends to adjacent wiring portions (metal patterns) that are electrically independent, it is possible to easily detect the occurrence of a short circuit. As described above, the short circuit position can be easily identified by comparing the portion displayed in the first pattern with the design patterns that are electrically independent from each other. Therefore, according to this embodiment, it is not necessary to take the time to measure the resistance between wiring portions that should be electrically independent from each other, and therefore it is possible to easily detect the short circuit portion.

[0047] [Second embodiment] 6 is a cross-sectional view of a main part of a focused ion beam apparatus 1A according to a second embodiment of the present invention. This focused ion beam apparatus 1A has a configuration in which a focused ion beam optical system 13 is installed on a sample stage and in a chamber. The other configurations of this embodiment are the same as those of the focused ion beam apparatus 1 according to the first embodiment.

[0048] [Other embodiments] Although the embodiment of the present invention has been described above, the description and drawings forming a part of the disclosure of this embodiment should not be understood as limiting this invention. Various alternative embodiments, examples and operating techniques will become apparent to those skilled in the art from this disclosure.

[0049] For example, in the above embodiment, the secondary charged particle detector is configured with a scintillator, but the present invention is not limited to this.

[0050] In the above embodiment, the direction in which the beam spot of the focused ion beam Ib is scanned by the raster scan method is the same as the extension direction of the wiring portions 34 to 42. However, if the diameter dimension of the beam spot is set to be shorter than the width dimension of each wiring portion, the wiring portions to which the voltage application probes 25 are connected can be displayed in stripes (vertical stripes) even if the scanning direction and the extension direction of the wiring portions intersect.

[0051] In the above embodiment, a pulse voltage is applied as the pulse-like voltage, but a voltage that changes over time, such as a sawtooth wave voltage or a sine wave voltage, may also be applied. [Explanation of symbols]

[0052] A Inspection area B Bright areas D Dark Area Ib Focused ion beam R forward / backward direction S Scanning direction 1. Focused ion beam device 2 Differential exhaust system 3. Focused Ion Beam Column (FIB Column) 4 Substrate support stage 5 Lifting means 6 Head section 7A Annular groove (innermost annular groove) 7B,7C Annular groove 8 Exhaust pipe 9. Vacuum Pump 10 Deposition gas supply pipe 11 Deposition gas delivery section 12 Telescope tube 13 Focused ion beam optics 14 Ion source 15 Focusing Lens 16 Aperture 17 Deflector 18 Objective Lens 19 Secondary Charged Particle Detector 20 Movement control section 21 Differential pumping control section 22 Image Generation Unit 23 Film formation control section 24 FIB Control Unit 25 Voltage application probe 30 Tested board 31 Insulating substrate 34~42,45,46 Wiring section (metal pattern) 35B, 36B, 38B, 39B, 41B, 42B Disconnected part (separated part) 44 Pulse power supply 50 Vacuum Chamber

Claims

1. a focused ion beam optical system that irradiates a focused ion beam onto a substrate to be inspected, the substrate having a metal pattern formed along its surface; a secondary charged particle detector that detects the intensity of secondary charged particles emitted from the substrate to be inspected in association with irradiation of the focused ion beam; A secondary charged particle image of the inspected substrate is obtained based on the detection value from the secondary charged particle detector. an image generating unit for displaying the image; A mechanism for applying a voltage to the substrate to be inspected; A focused ion beam device comprising: a differential evacuation device having a head portion capable of facing the substrate to be inspected; a focused ion beam column incorporating the focused ion beam optical system; creating a high vacuum state below the head unit while the head unit faces the substrate to be inspected; a tip end of the focused ion beam column is connected to a central opening formed in the head portion; the mechanism is a probing mechanism capable of extending and retracting a voltage application probe toward the substrate to be inspected, the focused ion beam optical system is set to periodically and sequentially scan an entire inspection area including the metal pattern on the substrate to be inspected with a focused ion beam in a raster scan manner; A time-varying pulse voltage is applied to the metal pattern, a period of the pulsed voltage is set shorter than a longitudinal scanning period of the focused ion beam; The image generating unit, a first pattern that depends on the pulsed voltage and changes over time in a portion of the metal pattern in the secondary charged particle image to which the pulsed voltage is applied; a second pattern that depends on a potential that does not change with time in a portion of the metal pattern to which the pulsed voltage is not applied; It is possible to display The metal pattern is repaired by the focused ion beam optical system.

2. A focused ion beam device comprising:

2. a first pattern that depends on the pulsed voltage and changes over time is displayed in a portion of the metal pattern to which the pulsed voltage is applied in the secondary charged particle image; A second pattern that depends on a time-unchanging potential is displayed in a portion of the metal pattern to which the pulse-like voltage is not applied, A boundary portion between two regions of the first pattern and the second pattern is detected as a separation portion; and detecting a break in the metal pattern based on the presence or absence of the separated portion.

2. The focused ion beam device according to claim 1.

3. a first pattern that depends on the pulsed voltage and changes over time is displayed in a portion of the metal pattern to which the pulsed voltage is applied in the secondary charged particle image; A second pattern that depends on a time-unchanging potential is displayed in a portion of the metal pattern to which the pulse-like voltage is not applied, a design pattern image and the secondary charged particle image, which are electrically independent from each other, are compared to detect a short circuit portion; 2. The focused ion beam device according to claim 1.

4. A scanning direction of the focused ion beam is set to a direction perpendicular to an extending direction of the metal pattern. The focused ion beam device according to any one of claims 1 to 3.

5. a film formation control unit that controls the supply of a deposition gas to a disconnection portion of the metal pattern detected based on the secondary charged particle image created by the image generating unit, the focused ion beam optical system decomposes the deposition gas on the broken portion by irradiating the focused ion beam to deposit a repair CVD film on the broken portion; 3. The focused ion beam device according to claim 1 or 2.

6. the focused ion beam optical system irradiates the focused ion beam onto a short-circuit portion of the metal pattern detected based on the secondary charged particle image created by the image generating unit; The short circuit portion can be removed by sputtering.

4. The focused ion beam device according to claim 1.

7. The probing mechanism applies the pulsed voltage to the metal pattern. The focused ion beam device according to any one of claims 1 to 6.

Images