High Frequency Power Divider

The high frequency power divider addresses the issue of increased power loss and size in multistaged Wilkinson dividers by using microstrip lines and resistance elements to achieve enhanced bandwidth and efficiency.

JP7620415B2Active Publication Date: 2025-01-23KK TOSHIBA
View PDF 7 Cites 0 Cited by

Patent Information

Application Number
JP2020194256
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Filing Date
2020-11-24
Publication Date
2025-01-23
Estimated Expiration
2040-11-24

AI Technical Summary

Technical Problem

Wilkinson type power dividers experience increased power loss and circuit size when multistaged for wider band operation.

Method used

A high frequency power divider design incorporating an insulating substrate with specific configurations of microstrip lines and resistance elements, achieving phase changes of 90 and 180 degrees, to enhance bandwidth while maintaining low loss.

Benefits of technology

The design provides a wider fractional bandwidth and reduced power loss, facilitating easier connection to subsequent stages with improved circuit efficiency.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure 0007620415000001
    Figure 0007620415000001
  • Figure 0007620415000002
    Figure 0007620415000002
  • Figure 0007620415000003
    Figure 0007620415000003
Patent Text Reader

Abstract

To provide a high-frequency power distributor capable of achieving a wider band.SOLUTION: A high-frequency power distributor 1 includes an insulating substrate RS and a circuit provided on the substrate. The circuit includes an input end Pin, first and second output ends Pout1, Pout2, and a resistive element Rb. First and second microstrip lines 10a, 20a are disposed between the input end and the first output end. Another first and second microstrip lines 10b, 20b are disposed between the input end and the second output end. The first microstrip line is connected to the second microstrip line. The second microstrip line is connected to the first output end or the second output end. A third microstrip line 30a is disposed between a connection point CP1 between the first and second microstrip lines and one end of the resistive element. Another third microstrip line 30b is disposed between the connection point between the another first and second microstrip lines and the other end of the resistive element.SELECTED DRAWING: Figure 1
Need to check novelty before this filing date? Find Prior Art

Description

[Technical field]

[0001] The embodiment relates to a high frequency power divider. [Background technology]

[0002] For example, a Wilkinson type power splitter is used for power distribution in high frequency bands such as microwaves. However, when a Wilkinson type power splitter is made multi-staged to widen the band, the power loss increases and the circuit size also becomes large. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 09-321509 Summary of the Invention [Problem to be solved by the invention]

[0004] The embodiment provides a high frequency power divider capable of achieving a wide bandwidth. [Means for solving the problem]

[0005] A high frequency power splitter according to an embodiment includes an insulating substrate and a circuit provided on the substrate. The circuit includes an input terminal, a first output terminal, a second output terminal, a plurality of first microstrip lines, a plurality of second microstrip lines, a plurality of third microstrip lines, and a resistive element. Between the input terminal and the first output terminal, a first microstrip line of the plurality of first microstrip lines and a second microstrip line of the plurality of second microstrip lines are arranged. Between the input terminal and the second output terminal, another first microstrip line of the plurality of first microstrip lines and another second microstrip line of the plurality of second microstrip lines are arranged. The input terminal is connected to a first end of the one first microstrip line and a first end of the other first microstrip line. A second end of the one first microstrip line is connected to a first end of the one second microstrip line, and a second end of the one second microstrip line is connected to the first output end. A second end of the other first microstrip line is connected to a first end of the other second microstrip line, and a second end of the other second microstrip line is connected to the second output end. A first end of one third microstrip line of the plurality of third microstrip lines is connected to the second end of the one first microstrip line and the first end of the one second microstrip line. A second end of the one third microstrip line is connected to one end of the resistive element. A first end of another third microstrip line of the plurality of third microstrip lines is connected to the second end of the other first microstrip line and the first end of the other second microstrip line. A second end of the other third microstrip line is connected to the other end of the resistive element. A phase change of a high frequency signal between the first end and the second end of each of the plurality of first microstrip lines is 90 degrees, and a phase change of a high frequency signal between the first end and the second end of each of the plurality of second microstrip lines is 90 degrees.The phase change of a high frequency signal between the first end and the second end of each of the plurality of third microstrip lines is 180 degrees. [Brief description of the drawings]

[0006] [Figure 1] FIG. 2 is a schematic plan view illustrating a high-frequency power distributor according to the embodiment. [Diagram 2] 1 is a circuit diagram illustrating a high-frequency power distributor according to an embodiment of the present invention. [Diagram 3] 4 is a graph showing characteristics of a high frequency power splitter according to an embodiment. [Figure 4] FIG. 11 is a circuit diagram illustrating a high-frequency power distributor according to a modified example of the embodiment. [Diagram 5] 1A and 1B are a circuit diagram and a schematic plan view illustrating a high-frequency power splitter according to a comparative example. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0007] Hereinafter, the embodiments will be described with reference to the drawings. The same parts in the drawings are given the same numbers, and detailed descriptions thereof will be omitted as appropriate, and different parts will be described. Note that the drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as the actual ones. Even when the same parts are shown, the dimensions and ratios of each part may be different depending on the drawing.

[0008] Furthermore, the arrangement and configuration of each part will be explained using the X-axis, Y-axis, and Z-axis shown in each figure. The X-axis, Y-axis, and Z-axis are mutually perpendicular and represent the X-direction, Y-direction, and Z-direction, respectively. In addition, the Z-direction may be described as upward and the opposite direction as downward.

[0009] 1 is a schematic plan view showing a high frequency power splitter 1 according to an embodiment. The high frequency power splitter 1 is composed of, for example, a plurality of microstrip lines and a resistive element Rb provided on a front surface of an insulating substrate RS. The insulating substrate RS includes, for example, a resin or ceramic, and has a metal layer (not shown) on a rear surface. The plurality of microstrip lines include, for example, copper (Cu) or gold (Au).

[0010] As shown in FIG. 1, the high-frequency power splitter 1 includes an input terminal Pin, a first output terminal Pout1, a second output terminal Pout2, a plurality of first microstrip lines 10a, 10b, a plurality of second microstrip lines 20a, 20b, a plurality of third microstrip lines 30a, 30b, and a resistive element Rb.

[0011] For example, the input terminal Pin, the first output terminal Pout1, and the second output terminal Pout2 are aligned in a first direction along the surface of the insulating substrate RS, for example, the Y direction. The input terminal Pin is provided between the first output terminal Pout1 and the second output terminal Pout2. Furthermore, the input terminal Pin and the resistive element Rb are aligned in a second direction along the surface of the insulating substrate and intersecting the first direction, for example, the X direction.

[0012] A first microstrip line 10a and a second microstrip line 20a are disposed between the input terminal Pin and the first output terminal Pout1. A first microstrip line 10b and a second microstrip line 20b are disposed between the input terminal Pin and the second output terminal Pout2.

[0013] The first microstrip lines 10a, 10b and the second microstrip lines 20a and 20b each extend in the Y direction. The first microstrip lines 10a, 10b and the second microstrip lines 20a and 20b each do not branch and have one end (hereinafter, a first end) and the other end (hereinafter, a second end).

[0014] The input terminal Pin is connected to a first end of the first microstrip line 10a and a first end of the first microstrip line 10b.

[0015] A second end of the first microstrip line 10a is connected to a first end of the second microstrip line 20a. A second end of the second microstrip line 20a is connected to the first output port Pout1.

[0016] A second end of the first microstrip line 10b is connected to a first end of the second microstrip line 20b. A second end of the second microstrip line 20b is connected to the second output port Pout2.

[0017] The third microstrip line 30a is provided between a connection point CP1 of the first microstrip line 10a and the second microstrip line 20a and a resistive element Rb. A first end of the third microstrip line 30a is connected to a second end of the first microstrip line 10a and a first end of the second microstrip line 20a at the connection point CP1. A second end of the third microstrip line 30a is connected to one end of the resistive element Rb.

[0018] The third microstrip line 30b is provided between a connection point CP2 of the first microstrip line 10b and the second microstrip line 20b and the resistive element Rb. A first end of the third microstrip line 30b is connected to a second end of the first microstrip line 10b and a first end of the second microstrip line 20b at the connection point CP2. A second end of the third microstrip line 30b is connected to the other end of the resistive element Rb.

[0019] Fig. 2 is a circuit diagram illustrating a high frequency power splitter 1 according to an embodiment. As shown in Fig. 2, the input terminal Pin, the first output terminal Pout1, and the second output terminal Pout2 are provided so that the characteristic impedance Zport is 50Ω.

[0020] The first microstrip lines 10a and 10b each have a characteristic impedance Z1 and are provided so that a phase change of a high-frequency signal between a first end and a second end is 90 degrees.

[0021] The second microstrip lines 20a and 20b each have a characteristic impedance Z2 and are provided so that the phase change of a high-frequency signal between the first end and the second end is 90 degrees.

[0022] The third microstrip lines 30a and 30b each have a characteristic impedance Z3 and are provided so that a phase change of a high-frequency signal between the first end and the second end is 180 degrees.

[0023] Fig. 3 is a graph showing the characteristics of the high frequency power splitter 1 according to the embodiment. The horizontal axis is a value obtained by normalizing the signal frequency with the center frequency. The vertical axis is the absolute value (dB) of S11. Fig. 3 shows a characteristic SP1 of the high frequency power splitter 1 according to the embodiment and a characteristic SP2 of a high frequency power splitter 2 according to a comparative example (see Fig. 5).

[0024] Fig. 5(a) is a schematic plan view showing the high frequency power divider 2, and Fig. 5(b) is a circuit diagram showing the high frequency power divider 2. As shown in Fig. 5(a), the high frequency power divider 2 is provided on the surface of an insulating substrate RS. The high frequency power divider 2 is a Wilkinson power divider.

[0025] The high frequency power splitter 2 includes an input terminal Pin, a first output terminal Pout1, a second output terminal Pout2, a first microstrip line 10a, a first microstrip line 10b, and a resistive element Rb. The input terminal Pin, the first output terminal Pout1, and the second output terminal Pout2 are arranged, for example, in the X direction, and the input terminal Pin and the resistive element Rb are also arranged in the X direction.

[0026] The first microstrip line 10a is provided between the input terminal Pin and the first output terminal Pout1. A first end of the first microstrip line 10a is connected to the input terminal Pin, and a second end of the first microstrip line 10a is connected to one end of the resistor element Rb.

[0027] The first microstrip line 10b is provided between the input terminal Pin and the second output terminal Pout2. A first end of the first microstrip line 10b is connected to the input terminal Pin, and a second end of the first microstrip line 10b is connected to the other end of the resistor element Rb.

[0028] The first output terminal Pout1 and the second output terminal Pout2 are connected to one end and the other end of the resistor element Rb, respectively.

[0029] 5(b), the input terminal Pin, the first output terminal Pout1, and the second output terminal Pout2 are provided so that the characteristic impedance Zport is 50 Ω. The first microstrip lines 10a and 10b each have a characteristic impedance Z1, and are provided so that the phase change of the high-frequency signal between the first terminal and the second terminal is 90 degrees.

[0030] 3, the characteristic SP2 of the high frequency power splitter 2 has a minimum value at a center frequency. The center frequency is, for example, 3 GHz. On the other hand, the characteristic SP1 of the high frequency power splitter 1 indicates that |S11| is small in a fractional bandwidth range of 0.67 to 1.33, which corresponds to a band of 2 to 4 GHz. For example, in a band where |S11| is -20 dB or less, the high frequency power splitter 1 has a wider fractional bandwidth than the high frequency power splitter 2.

[0031] 1, the first output terminal Pout1 and the second output terminal Pout2 of the high frequency power splitter 1 are spaced apart in the Y direction. This makes it easier to connect to the next stage circuit, compared to the high frequency power splitter 2 in which the first output terminal Pout1 and the second output terminal Pout2 are provided at both ends of the resistive element Rb.

[0032] 4 is a circuit diagram showing a high-frequency power splitter 3 according to a modified example of the embodiment. The high-frequency power splitter 3 has a circuit configuration in which a power splitter circuit having the same structure as the power splitter circuit shown in FIG. 2 is connected in series to the first output terminal Pout1.

[0033] As shown in FIG. 4, the high-frequency power splitter 3 further includes fourth microstrip lines 40a and 40b, fifth microstrip lines 50a and 50b, sixth microstrip lines 60a and 60b, and a resistive element Rb2.

[0034] The fourth microstrip line 40a and the fifth microstrip line 50a are provided between the second microstrip line 20a and the first output terminal Pout1. A first end of the fourth microstrip line 40a is connected to a second end of the second microstrip line 20a, and a second end of the fourth microstrip line 40a is connected to a first end of the fifth microstrip line 50a. A second end of the fifth microstrip line 50a is connected to the first output terminal Pout1.

[0035] The fourth microstrip line 40b and the fifth microstrip line 50b are provided between the second microstrip line 20a and the second output terminal Pout2. A first end of the fourth microstrip line 40b is connected to a second end of the second microstrip line 20a, and a second end of the fourth microstrip line 40b is connected to a first end of the fifth microstrip line 50b. A second end of the fifth microstrip line 50b is connected to the second output terminal Pout2.

[0036] The sixth microstrip line 60a is provided between a connection point CP3 of the fourth microstrip line 40a and the fifth microstrip line 50a and the resistive element Rb2. A first end of the sixth microstrip line 60a is connected to a second end of the fourth microstrip line 40a and a first end of the fifth microstrip line 50a at the connection point CP3. A second end of the third microstrip line 60a is connected to one end of the resistive element Rb2.

[0037] The sixth microstrip line 60b is provided between a connection point CP4 of the fourth microstrip line 10b and the fifth microstrip line 50b and the resistive element Rb2. A first end of the sixth microstrip line 60b is connected to a second end of the fourth microstrip line 40b and a first end of the fifth microstrip line 50b at the connection point CP4. A second end of the sixth microstrip line 60b is connected to the other end of the resistive element Rb2.

[0038] The fourth microstrip lines 40a and 40b each have a characteristic impedance Z4 and are provided so that a phase change of a high-frequency signal between the first end and the second end is 90 degrees.

[0039] The fifth microstrip lines 50a and 50b each have a characteristic impedance Z5, and are provided so that a phase change of a high-frequency signal between the first end and the second end is 90 degrees.

[0040] The sixth microstrip lines 60a and 60b each have a characteristic impedance Z6, and are provided so that a phase change of a high-frequency signal between the first end and the second end is 180 degrees.

[0041] The high frequency power splitter 3 further includes a circuit (not shown) connected to the second microstrip line 20b similar to that shown in Fig. 2. The high frequency power splitter 3 further includes a third output terminal Pout3 and a fourth output terminal Pout4 (not shown).

[0042] In this example, the circuit shown in Fig. 2 is connected in two stages, but the embodiment is not limited to this. For example, if the circuit shown in Fig. 2 is configured in N stages, the number of output terminals becomes 2N. In other words, a high frequency power distributor having 2N output terminals can be configured.

[0043] Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included in the scope and spirit of the invention, and are included in the scope of the invention and its equivalents described in the claims. [Explanation of symbols]

[0044] REFERENCE SIGNS LIST 1, 2, 3...high frequency power divider; 10a, 10b...first microstrip line; 20a, 20b...second microstrip line; 30a, 30b...third microstrip line; 40a, 40b...fourth microstrip line; 50a, 50b...fifth microstrip line; 60a, 60b...sixth microstrip line; CP1, CP2, CP3, CP4...connection point; Pin...input terminal; Pout1...first output terminal; Pout2...second output terminal; RS...insulating substrate; Rb, Rb2...resistance element

Claims

1. An insulating substrate; A circuit provided on the substrate, the circuit including an input terminal, a first output terminal, a second output terminal, a plurality of first microstrip lines, a plurality of second microstrip lines, a plurality of third microstrip lines, and a resistive element, a first microstrip line among the plurality of first microstrip lines and a second microstrip line among the plurality of second microstrip lines are disposed between the input end and the first output end; another first microstrip line of the plurality of first microstrip lines and another second microstrip line of the plurality of second microstrip lines are disposed between the input end and the second output end; the input end is connected to a first end of the one first microstrip line and a first end of the other first microstrip line; a second end of the one first microstrip line is connected to a first end of the one second microstrip line; a second end of the one second microstrip line is connected to the first output end; a second end of the other first microstrip line is connected to a first end of the other second microstrip line; a second end of the second microstrip line is connected to the second output end; a first end of one of the plurality of third microstrip lines is connected to the second end of the one first microstrip line and the first end of the one second microstrip line; a second end of the one third microstrip line is connected to one end of the resistive element; a first end of another third microstrip line among the plurality of third microstrip lines is connected to the second end of the other first microstrip line and the first end of the other second microstrip line; a second end of the third microstrip line is connected to the other end of the resistive element; a phase change of a high frequency signal between the first end and the second end of each of the plurality of first microstrip lines is 90 degrees; a phase change of a high frequency signal between the first end and the second end of each of the plurality of second microstrip lines is 90 degrees; a phase change of a high frequency signal between the first end and the second end of each of the plurality of third microstrip lines is 180 degrees; Equipped with the input end, the first output end, and the second output end are aligned along a surface of the substrate in a first direction from the second output end to the first output end, and the input end is provided between the first output end and the second output end; the one first microstrip line, the other first microstrip line, the one second microstrip line and the other second microstrip line each extend in the first direction; the input terminal and the resistor element are aligned in a second direction along the surface of the substrate and intersecting the first direction; the one third microstrip line has a first portion extending in the second direction from the first end of the one third microstrip line, a second portion extending from a tip of the first portion to a side opposite to the first direction, a third portion extending in the second direction from a tip of the second portion, a fourth portion extending in the first direction from the tip of the third portion, a fifth portion extending in the second direction from the tip of the fourth portion, and a sixth portion extending from the tip of the fifth portion to the second end of the one third microstrip line, the other third microstrip line has a first portion extending in the second direction from the first end of the other third microstrip line, a second portion extending in the first direction from a tip of the first portion, a third portion extending in the second direction from a tip of the second portion, a fourth portion extending from the tip of the third portion to a side opposite to the first direction, a fifth portion extending in the second direction from the tip of the fourth portion, and a sixth portion extending from the tip of the fifth portion to the second end of the other third microstrip line.

2. 2. The high frequency power splitter according to claim 1, wherein the characteristic impedance at said input terminal, said first output terminal and said second output terminal is 50[Omega].

3. A plurality of circuits according to claim 1 or 2 are provided, the plurality of circuits includes first and second circuits; A high frequency power splitter, the first output terminal of the first circuit being connected to the input terminal of the second circuit.

Citation Information

Patent Citations

  • Power splitter for high frequency signals

    EP1017124A1

  • Strip line type power divider / combiner with resistance element

    JP1983115901A

  • High frequency power distribution and synthesization circuit

    JP1989241202A

  • Power synthesizer

    JP1993022007A

  • Branch / joint device

    JP1997321509A