Gas Flow Deposition Equipment

Abstract

To suppress an instability of a vapor deposition rate due to flying a powder material by spraying and a quality degradation due to a transfer of not vaporized material to a film production room when an organic material is the powder material in a gas flow deposition apparatus where then organic material is transferred from a vaporization chamber to a film production room through a gas flow of a gas including the organic material vapor and a film is deposited on a surface to be deposited.SOLUTION: A gas flow vapor deposition apparatus according to the invention includes a film production room, a vaporization chamber, and a carrier gas supply system. The vaporization chamber that includes an arrangement part that includes a shower plate and a material arrangement area in which a powder material of the organic material is arranged, and produces the vapor by blowing a carrier gas heated to the material arrangement area. The shower plate includes multiple gas blowout holes so as to blow out the heated carrier gas to a whole area of the material arrangement area.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present invention relates to a gas flow deposition apparatus for organic materials. In particular, the present invention relates to a gas flow deposition apparatus that transports an organic material, such as an organic EL (Electro Luminescence) material, from a vaporization chamber to a film formation chamber by a gas flow, which is a gas flow containing vapor of a powder material of the organic material, and deposits the organic material on a film formation surface in the film formation chamber. The present invention also relates to a method for manufacturing an organic EL element. [Background technology]

[0002] An organic EL element is a surface-emitting device that utilizes the phenomenon that light is emitted when an electric field is applied to a substance. An organic EL element in which an organic EL material is laminated on a substrate is self-luminous and can be made thin, and is being applied to planar light sources, displays, and the like. Here, an organic EL element can be manufactured by laminating an organic EL material on a base material such as a glass substrate or a transparent resin film by vacuum deposition. A typical layer structure of an organic EL element is as shown in FIG. 1. Here, FIG. 1 is a cross-sectional view showing one embodiment of an organic EL element 100. The organic EL element 100 shown in FIG. 1 is formed on a glass substrate 110, and the overlapping portion in which a transparent electrode layer 120, an organic EL material layer 130, and a back electrode layer 140 are laminated is the organic EL element, which is generally sealed by a sealing portion 150 and included in an organic EL panel.

[0003] As a vacuum deposition method suitable for forming a film to form such an organic EL material layer 130, for example, there is a gas flow deposition apparatus disclosed in Patent Document 1, which has advantages such as the ability to control the deposition rate by controlling the flow rate of the carrier gas, to realize deposition with high film thickness uniformity by optimizing the film formation chamber, and to obtain a high-purity thin film.

[0004] This type of gas flow deposition apparatus is an apparatus that heats and vaporizes an organic material filled in a material placement area in a vaporization chamber, transports the evaporated organic material gas using a carrier gas, and sprays it onto the substrate, thereby vapor-depositing the organic material onto a base material. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2016-98417 A Summary of the Invention [Problem to be solved by the invention]

[0006] With conventional gas flow deposition technology, the organic powder material placed in the material placement area would fly up when sprayed with a carrier gas, causing the deposition rate to become unstable. In addition, unevaporated material would be transported directly to the film formation chamber, reducing the quality of the film produced and compromising the reliability of organic electroluminescence (EL) elements, etc.

[0007] In addition, in order to obtain a high evaporation rate, it is effective to increase the area of ​​the material placement region. However, when the area of ​​the material placement region is increased, the contact between the carrier gas and the organic material becomes non-uniform, which can lead to an unstable evaporation rate.

[0008] The present invention has been made to solve the problems of the conventional technology, and has an object to provide a gas flow deposition apparatus in which the flying up of powder material is suppressed and the evaporation rate is stable even when the area of ​​the material placement region is increased. [Means for solving the problem]

[0009] The inventors conducted studies to solve these problems and discovered that by installing a shower plate in the vaporization chamber of a gas flow deposition apparatus, the organic powder material is prevented from flying up, and the evaporation rate is stable even if the area of ​​the material placement region is increased. Thus, they solved the above-mentioned problems and arrived at the present invention.

[0010] That is, the present invention is a gas flow deposition apparatus that transports an organic material from a vaporization chamber to a film formation chamber by a gas flow, which is a flow of a vapor-containing gas containing a vapor of an organic material, and deposits the organic material on a film formation surface in the film formation chamber, The deposition chamber, the vaporization chamber, and a carrier gas supply system are included, The vaporization chamber is Including shower plate, A heated carrier gas is supplied from the carrier gas supply system, and the vapor-containing gas is discharged to the deposition chamber side, and a placement section including a material placement area in which the organic powder material is placed; A discharge section for the discharge, and Including the vaporization space, The heated carrier gas is blown onto the material placement region to generate the vapor; moreover, The shower plate is provided with a plurality of nozzles for spraying the material so as to cover the entire material placement area.

[0011] By forming films using the gas flow deposition apparatus of the present invention, curling of powder materials and deterioration of materials due to overheating can be suppressed, and a high film formation rate with high material utilization efficiency can be stably achieved, improving the reliability of products such as organic EL elements and reducing manufacturing costs. Specifically, problems that arise when, for example, the container temperature is raised to a higher temperature in order to form films at a high film formation rate, such as deterioration of materials and reduced element performance, and further, when continuous film formation is performed, an increase in the proportion of deteriorated materials that are difficult to vaporize can lead to a significant drop in rate, resulting in more wasted material and higher production costs, can be solved.

[0012] Moreover, the arrangement unit The material placement area, and The powder material is not disposed on the surrounding area. A non-material-disposed region is included, It is preferably in the shape of a circular dish, Such a circular dish shape is more preferably The material placement area is a bottom surface of the circular dish shape, and The non-material-placed region is a plate side surface, A convex inclination is formed from the bottom surface of the dish toward the outside of the circular dish shape. The side of the plate, It has a circular dish shape.

[0013] The vaporization chamber is arranged vertically from top to bottom as follows: The discharge section, A supply unit including the shower plate in relation to the supply, and It is preferable that the device includes the arrangement portion, The vaporization space formed by these components is further It is more preferable that the supply portion and the arrangement portion are detachably attached by means of an annular gasket.

[0014] In addition, it is preferable that the surface-to-surface distance, which is the distance between the shower plate and the material placement region, is adjustable.

[0015] The exhaust section preferably has an exhaust port for the exhaust at the top of the vaporization space and at the center of the horizontal cross section thereof.

[0016] The area ratio of the material placement region to the shower plate is preferably 1.0:1.0 to 1.0:1.2.

[0017] The inter-surface distance is preferably 5.0 to 30.0 mm.

[0018] Furthermore, the present invention relates to a method for producing an organic EL device using such a gas flow deposition apparatus of the present invention. Effect of the Invention

[0019] In the gas flow deposition apparatus of the present invention, the flying up of organic powder material is suppressed, and the evaporation rate is stable even when the area of ​​the material placement region is increased, so that the organic material can be deposited without any deterioration in quality. [Brief description of the drawings]

[0020] [Figure 1] FIG. 1 is a cross-sectional view illustrating an embodiment of an organic EL element 100. [Diagram 2] FIG. 1 is a schematic cross-sectional view illustrating one embodiment of a vaporization chamber according to the present invention, which is used, for example, to vaporize an organic EL material for the production of an organic EL element, and which includes a shower plate according to the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0021] Hereinafter, an embodiment of the gas flow deposition apparatus of the present invention will be described in detail together with an explanation of the components constituting the apparatus.

[0022] (Gas flow deposition equipment) The gas flow deposition apparatus of the present invention is an apparatus that transports an organic material from a vaporization chamber to a film formation chamber by a gas flow, which is a flow of vapor-containing gas containing vapor of an organic material, and deposits a film of the organic material on a surface to be formed in the film formation chamber, and includes a film formation chamber, a vaporization chamber, and a carrier gas supply system.

[0023] (Vaporization chamber) 2 is a schematic cross-sectional view illustrating one embodiment of the vaporization chamber according to the present invention, which is used, for example, to vaporize an organic EL material for producing an organic EL element, and includes a shower plate (hereinafter, sometimes abbreviated as "SWPL") 211 according to the present invention. In the present invention, a carrier gas introduced from the side of the crucible is supplied to the center of the crucible, diffuses over the entire bottom surface via the SWPL, mixes with the material gas, and is discharged from an exhaust port in the center of the exhaust section to reach the film deposition chamber.

[0024] The vaporization chamber 200 of the present invention has the function of generating the vapor in a vaporization space contained therein, which will be described later, and discharging a vapor-containing gas containing this vapor to the film deposition chamber side, and includes an exhaust section, a placement section, and a supply section.

[0025] The placement section 220 is a material placement area 22 in which the organic powder material is placed. 1 A heated carrier gas, which will be described later, is introduced into the material placement region 22. 1 It is one of the features of the present invention that the steam is generated by simultaneously spraying the powder material under certain conditions.

[0026] That is, the supply unit 210 supplies the heated carrier gas to the material placement area 22 1 It includes a shower plate 211 that sprays water under specific circumstances.

[0027] In such an evaporation chamber 200 according to the present invention, it is preferable that the supply section 210 and the placement section 220 can be attached and detached in close contact with each other using an annular gasket, from the viewpoint of facilitating maintenance of the apparatus and changing the specifications of the evaporation chamber in accordance with various film formation conditions.

[0028] In addition, from the viewpoint of facilitating the above-mentioned specification changes, the shower plate 211 and the material placement area 22 1 It is preferable that the inter-surface distance between the first and second electrodes is adjustable, and the distance is preferably 5.0 to 30.0 mm.

[0029] Furthermore, in order to effectively achieve the effects of the present invention, the material placement region 22 1 The area ratio of the shower plate 211 is 1.0:1.0 to 1.0:1.2. in It is preferable that there is.

[0030] In the vaporization chamber 200 of the present invention, from the viewpoint of ease of cleaning the vaporization chamber including its vaporization space, it is preferable that the vaporization chamber 200 be composed of three parts consisting of a supply section 210, a placement section 220, and a discharge section 230, and it is more preferable that these are airtight and detachable, and it is preferable that the spaces between these sections be kept tightly sealed by, for example, a ring-shaped metal gasket or the like.

[0031] By adopting the above-mentioned configuration, the surface-to-surface distance between the shower plate and the material placement region can be changed as desired. For example, the surface-to-surface distance between the shower plate and the material placement region can be adjusted by inserting a spacer of an arbitrary thickness between the supply unit and the placement unit. In addition, the surface-to-surface distance between the shower plate and the material placement region can be adjusted as desired by forming the wall shape of the metal pipe 213 (described later) of the supply unit 210 into a bellows-like pipe shape.

[0032] (organic material) The organic material is not particularly limited as long as it can be a powder material and can be vaporized. For example, it can be an organic material used in the organic EL material layer 130, which is a functional layer of an organic EL element. In this case, examples of the organic material include p-doped materials, n-doped materials, hole transporting materials, electron transporting materials, charge transporting materials having both properties, and fluorescent materials and phosphorescent materials used as light-emitting materials.

[0033] (Carrier gas) The carrier gas is not particularly limited, but may vary depending on the film to be formed. For example, when forming a film constituting the organic EL material layer 130, an inert gas such as N2, He, Ne, Ar, Kr, or Xe that does not react with organic materials is preferred. From the viewpoint of cost, N2 and / or Ar is more preferred, and from the viewpoint of preventing reaction with high-temperature piping, Ar is most preferred. In the examples of this specification, Ar gas was used as the carrier gas.

[0034] (Discharge section) The exhaust section 230 has an exhaust outlet 231 according to the present invention, that is, the vapor of the organic material generated in the vaporization space is exhausted to the deposition chamber side as a vapor-containing gas together with the carrier gas supplied to the vaporization chamber. From the viewpoint of stable transport of the organic material to the deposition chamber, it is preferable that the exhaust port 231 is located at the top of the vaporization space and at the center of the horizontal cross section.

[0035] (Arrangement part) The placement portion 220 is preferably a portion having a circular dish shape, or a member including such a portion, and constitutes a vaporization chamber according to the present invention so as to form a vaporization space together with the discharge portion 230 and the supply portion 210, and a material placement area 22 in which the powder material of the organic material is placed. 1 , and material placement area 22 1 The material-free region 22 surrounding the 2 The powder material is not placed in the non-placement area 22. 2 It consists of:

[0036] The material placement area 22 1 is preferably the bottom surface of the circular dish, and the non-material placement area 22 2 is preferably a dish side surface of the circular dish shape, which has a convex slope from the dish bottom surface toward the outside of the circular dish shape.

[0037] That is, more specifically, the material placement area 22 according to the present invention 1 The material non-placement area 22 can be an area including all or a part of the inner bottom surface of the vaporization chamber when viewed vertically. 2 is an area including the remaining part of the inner bottom surface of the vaporization chamber and, in some cases, a part of the inner surface of the inside of the vaporization chamber, in which the powder material according to the present invention is not placed.

[0038] In addition, the material placement area 22 1 Regarding the shape of the vaporizer, a circular shape is preferable from the viewpoint of easily uniformly spraying the carrier gas, and in the case of a circular shape, from the viewpoint of obtaining a high evaporation rate, the preferable lower limit of the diameter is Φ30 mm, more preferably Φ38 mm, and even more preferably Φ50 mm. However, from the viewpoint of uniform temperature at the bottom of the vaporizer, if the diameter is large, temperature unevenness is likely to occur between the center and the outer periphery of the vaporizer, which leads to instability of the evaporation rate, so the preferable upper limit of the diameter is Φ100 mm, more preferably Φ90 mm, even more preferably Φ70 mm, and most preferably Φ65 mm.

[0039] In addition, at the bottom surface of the vaporization chamber, a material non-placement region 22 2 However, if the flow of the material gas or carrier gas generated during exhaust is stagnated at the outer periphery of the bottom surface, the deposition rate will decrease and the evaporation will become uneven between the center and the periphery of the bottom surface, making the deposition rate unstable. From this viewpoint, the material non-disposition region 22 2 From the viewpoint of avoiding an increase in internal pressure and a decrease in deposition rate due to carrier gas accumulation, it is preferable to provide a slope in the material non-disposition region 22 2 It is preferable that there is a gap of 2 to 10 mm between the inclination of the holder and the end of the shower plate.

[0040] The surface-to-surface distance between the shower plate 211 and the material placement region 221 (the distance between the bottom surface of the shower plate 211 and the top surface of the material placement region 221 in a side view) is preferably 5 mm or more and 30 mm or less, more preferably 7 mm or more and 28 mm or less, even more preferably 9 mm or more and 24 mm or less, and particularly preferably 11 mm or more and 22 mm or less, from the viewpoint of easily increasing the deposition rate and easily suppressing the flying up of the organic material. The above inter-surface distance can be adjusted, for example, by inserting a spacer into the holder that supports the shower plate.

[0041] In other words, the vaporizer according to the present invention preferably comprises: Looking vertically downward, a material placement area in which an organic powder material is placed; A non-material-disposition region, A non-material-disposed region surrounding and continuous with the material-disposed region; and A region outside the non-material-placement region is included. A material non-disposition region; Including, The heated carrier gas for vaporization is sprayed onto a spray area including the material placement area and the non-material placement area to generate steam according to the present invention, and the steam-containing gas according to the present invention is discharged according to the present invention through the area outside the non-material placement area when viewed vertically downward.

[0042] (Supply Department) The supply unit 210 is related to the supply according to the present invention, i.e., has the function of receiving heated carrier gas from the carrier gas supply system according to the present invention and spraying this heated carrier gas from the shower plate 211 to the material placement area 221 in a specific state, and includes a carrier gas inlet pipe 214 connected to the carrier gas supply system and the shower plate 211, which is related to the supply, and also includes a vaporization chamber according to the present invention so as to form a vaporization space together with the exhaust unit 230 and the placement unit 220, and therefore includes a vaporization chamber side body that forms an area including the remaining part of the inner inner surface of the inner side of the vaporization chamber that is not included in the placement unit 220, i.e., the carrier gas inlet pipe 214 and the vaporization chamber side body form a double pipe structure as at least a part of the vaporization chamber.

[0043] The shower plate 211 has a specific shape in order to perform spraying under the specific conditions described above, and is one of the features of the present invention.

[0044] The shower plate 211 according to the present invention must have a plurality of blowing holes so that the carrier gas supplied from the carrier gas supply system as the heated carrier gas for vaporization in the spraying according to the present invention can be distributed throughout the material placement region 221.

[0045] The structure of such shower plate 211 is not particularly limited as long as it satisfies the above requirements, and typically a plate-shaped one having a plurality of blowing holes can be used, but the structure is not limited thereto, and for example, a porous sintered body or a mesh-shaped one can also be used.

[0046] The shape of the opening of the blowing hole of the shower plate is not particularly limited, and may be a circle, a rectangle, or various other shapes, but a circle is typically used. In the case of a circle, the diameter of the opening may be arbitrary, but it is preferable that the diameter of the opening is in the range of 1.0 to 1.5 mm in terms of making it easier to achieve an appropriate blowing speed of the carrier gas. The shapes and areas of the multiple blowing holes may be the same, or different shapes and areas may be combined.

[0047] There are no particular restrictions on the number of multiple blow-out holes provided on the shower plate, but the more blow-out holes there are, the more the blow-out speed of the carrier gas can be reduced and the easier it is to suppress the organic powder material from flying up. Conversely, if the number of blow-out holes is too large, the blow-out speed will be too low, and as a result, the discharged carrier gas will often be exhausted without coming into contact with the surface of the organic material and the organic material gas will be overly diluted, which is likely to cause a decrease in the deposition rate. From these points of view, a preferable number of blow-out holes is 60 to 200, more preferably 70 to 190, and even more preferably 80 to 180.

[0048] There is no particular restriction on the total opening area of ​​the multiple blow-out holes provided on the shower plate, but in order to prevent pressure loss within the vaporization chamber, it is preferable that the ratio of the total opening area of ​​the multiple blow-out holes provided on the shower plate to the cross-sectional area of ​​the exhaust port 231 in Figure 2 be 1.0:1.0 to 3.0:1.0.

[0049] The area of ​​the shower plate is not particularly limited, but from the viewpoint of obtaining a high deposition rate, it is preferable that the ratio of the area of ​​the material placement region to the area of ​​the shower plate is 1.0:1.0 to 1.0:1.2. In addition, it is preferable that the shower plate is disposed so as to cover the entire material placement region when viewed vertically.

[0050] The material of the shower plate is not particularly limited as long as the object of the present invention is achieved, but typically a metal can be used. In order not to lower the temperature of the discharged carrier gas, a metal with high thermal conductivity and specific heat is preferable, and austenitic stainless steel is preferable because it is easy to process. EXAMPLES

[0051] The present invention will be described in detail below with reference to examples, but the present invention is not limited to these examples.

[0052] Example 1 The diameter of the material placement area is Φ65mm (the area of ​​the material placement area is 3317mm 2 ), the surface distance between the material placement area and the shower plate is 22 mm, a slope is provided in the non-material placement area, the gap between the slope and the shower plate holder is 5 mm, and the diameter of the shower plate is 75 mm (the area of ​​the shower plate is 4416 mm 2 ), the total number of holes on the shower plate is 190, and the total opening area is 172 mm 2 A transparent acrylic container simulating the vaporization chamber of the present invention was created, and 1.0 g of powder material to be used for the organic material light-emitting layer was weighed out and placed in the material placement area. The pressure inside the apparatus was set to -88.0 kPa, and the flow rate of the inert carrier gas regulated by the mass flow controller was adjusted to 3.0 slm. A visual inspection was performed to see if the powder material in the vaporization chamber was flying up, and it was confirmed that there was no flying up.

[0053] Comparative Example 1 A transparent acrylic container simulating a vaporization chamber was created with the same shape as in Example 1, except that it did not include a shower plate, i.e., the shower plate used in Example 1 was not used, and carrier gas was sprayed from a single outlet hole with a diameter of Φ10.5 mm. 1.0 g of powder material to be used for the organic light-emitting layer was placed in the material placement area, the pressure inside the apparatus was set to -88.0 kPa, and the flow rate of the inert carrier gas regulated by the mass flow controller was adjusted to 3.0 slm. A visual inspection was performed to see if the powder material in the vaporization chamber was flying up, and it was confirmed that the powder material was flying up.

[0054] Table 1 summarizes the comparison results.

[0055] [Table 1] From the above results, it was confirmed that in a vaporization chamber including the shower plate of the present invention, the organic powder material does not fly up.

[0056] Example 2 The diameter of the material placement area is Φ65mm (the area of ​​the material placement area is 3317mm 2), the surface distance between the material placement area and the shower plate is 22 mm, a slope is provided in the non-material placement area, the gap between the slope and the shower plate holder is 5 mm, and the diameter of the shower plate is 75 mm (the area of ​​the shower plate is 4416 mm 2 ), the total number of holes on the shower plate is 190, and the total opening area is 172 mm 2 As a result, 1 g of the material used in the light-emitting layer of the organic EL material layer was uniformly placed in the material placement area, the flow rate of the inert carrier gas adjusted by the mass flow controller was adjusted to 3.0 slm, and the temperature of the vaporizer and carrier gas was set to 290° C. The organic EL material was evaporated under the following conditions: As a result, evaporation was stably performed at an evaporation rate of 0.065 Å / s on a 400 mm × 500 mm glass substrate.

[0057] Comparative Example 3 Except for not including a shower plate, deposition was performed under the same conditions in the same deposition apparatus as in Example 2. As a result, the deposition rate became unstable.

[0058] Comparative Example 4 The diameter of the material placement area is Φ38 mm (area of ​​the material placement area: 1134 mm), not including the shower plate. 2 ) deposition was performed under the same conditions using the same deposition apparatus as in Example 2. As a result, the deposition rate was unstable and low at 0.03 Å / s.

[0059] [Table 2] As can be seen from the above results, by implementing the present invention, it was possible to form a film at a high deposition rate while suppressing the flying up of the organic EL material at the bottom of the vaporization chamber by expanding the area of ​​the material placement region and installing a shower plate.

[0060] (summary) The effects and advantages of the present invention are as follows: By expanding the effective sublimation area of ​​the material, the film deposition rate can be increased by 3 to 5 times at the same temperature. By increasing the number of gas passage paths, the linear velocity of the gas coming into contact with the material is reduced, preventing powder from flying up, and reducing rate instability due to material loss and surface deterioration. -Since the exhaust port is located in the center, the carrier gas spreads throughout the entire bottom, allowing the generated material gas to be efficiently transported to the deposition chamber. Even if the crucible temperature is reduced by -10℃, film formation can be achieved at a higher rate than with conventional methods, and deterioration of the material surface can be reduced.

[0061] The present invention also has the following features. - Evaporation structure that can accommodate SWPL. The carrier gas dispersion effect of SWPL does not create turbulence inside the vessel, preventing the material from rolling up, enabling stable film production.

[0062] Furthermore, application of this method to organic EL devices has the following advantages: Eliminates the causes of leakage and dark spots (DS), improving the reliability of OLED elements. -Increasing the sublimation area of ​​the material increases the deposition rate. - Material deterioration is suppressed by reducing the frequency of contact between the heated carrier gas and the material. Materials that previously required refilling after one period can now be used for two to three periods with the same amount filled, improving material yield and enabling device costs to be reduced compared to manufacturing with conventional equipment. [Explanation of symbols]

[0063] 10 Base material 100 Organic EL element 110 Glass substrate 120 Transparent electrode layer 130 Organic EL material layer 140 Back electrode layer 150 Sealing part 200 Vaporizer 210 Supply section 211 Shower Plate 212 Shower plate / spacer holder 213 Metal piping 214 Carrier gas introduction piping 220 Placement section 221 Material placement area 222 Material non-placement area 230 Discharge section 231 Outlet 232 Piping to the film-making room

Claims

1. A gas flow deposition apparatus for transporting an organic material from a vaporization chamber to a film formation chamber by a gas flow, which is a flow of a vapor-containing gas containing vapor of an organic material, and depositing the organic material on a film formation surface in the film formation chamber, comprising: The deposition chamber, the vaporization chamber, and a carrier gas supply system are included, The vaporization chamber is Including shower plate, A heated carrier gas is supplied from the carrier gas supply system, and the vapor-containing gas is discharged to the deposition chamber side, and a placement section including a material placement area in which the organic powder material is placed; A discharge section for the discharge, and Including the vaporization space, The heated carrier gas is blown onto the material placement region to generate the vapor; moreover, The shower plate has a plurality of blowing holes that blow the material so as to cover the entire material placement area, The placement unit: The material placement area, and The powder material is not disposed on the surrounding area. A non-material-disposed region is included, It has a circular dish shape, The material placement area is a bottom surface of the circular dish shape, and The non-material-placed region is a plate side surface, A convex inclination is formed from the bottom surface of the dish toward the outside of the circular dish shape. The side of the plate, A gas flow deposition apparatus having a circular dish shape.

2. A gas flow deposition apparatus for transporting an organic material from a vaporization chamber to a deposition chamber by a gas flow, which is a flow of a vapor-containing gas containing vapor of an organic material, and depositing a film of the organic material on a surface to be deposited in the deposition chamber, comprising: The deposition chamber, the vaporization chamber, and a carrier gas supply system are included, The vaporization chamber is Including shower plate, A heated carrier gas is supplied from the carrier gas supply system, and the vapor-containing gas is discharged to the deposition chamber side, and a placement section including a material placement area in which the organic powder material is placed; A discharge section for the discharge, and Including the vaporization space, The heated carrier gas is blown onto the material placement region to generate the vapor; moreover, The shower plate has a plurality of blowing holes for blowing the material so as to cover the entire material placement area, The vaporization chamber is arranged vertically from top to bottom, The discharge section, A supply unit including the shower plate in relation to the supply, and The placement unit and The vaporization space formed by these components is further The supply unit and the arrangement unit are detachably attached to each other by an annular gasket, the exhaust section has an exhaust port for exhaust at the top of the vaporization space and at the center of the horizontal cross section thereof.

3. The gas flow deposition apparatus according to claim 1 , wherein a surface-to-surface distance between the shower plate and the material placement region is adjustable.

4. 4. The gas flow deposition apparatus according to claim 1, wherein an area ratio of the material placement region to the shower plate is 1.0:1.0 to 1.0:1.

2.

5. 4. The gas flow deposition apparatus according to claim 3, wherein the face-to-face distance is 5.0 to 30.0 mm.

6. A method for producing an organic EL element, using the gas flow deposition apparatus according to any one of claims 1 to 5.

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