High frequency circuits and wireless devices

Abstract

A high-frequency circuit according to the present invention comprises: a first ground layer on which a conductor is formed; a second ground layer on which a conductor is formed; and a conductive pattern layer on which a first conductive pattern is formed. The first ground layer, the second ground layer, and the conductive pattern layer are laminated, and in the lamination direction of the first ground layer, the second ground layer, and the conductive pattern layer, the conductive pattern layer includes a first region in which a distance to the conductor formed on the second ground layer is longer than a distance to the conductor formed on the first ground layer. At least a portion of the first conductive pattern is provided in the first region.

Description

[Technical field]

[0001] The present disclosure relates to high-frequency circuits and wireless devices. This application claims priority based on Japanese Patent Application No. 2020-134329, filed on August 7, 2020, the disclosure of which is incorporated herein in its entirety. [Background technology]

[0002] Japanese Patent Laid-Open Publication No. 2010-87830 (Patent Document 1) discloses a wireless device in which an SIR is mounted on a multi-layer board. In this wireless device, two SIRs are formed on different layers of the multi-layer board. When viewed from the stacking direction of the multi-layer board, the two SIRs are formed to overlap each other. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2010-87830 A Summary of the Invention

[0004] The high-frequency circuit of the present disclosure comprises a first ground layer on which a conductor is formed, a second ground layer on which a conductor is formed, and a conductive pattern layer on which a first conductive pattern is formed, the first ground layer, the second ground layer, and the conductive pattern layer are stacked, and the conductive pattern layer includes a first region in which a distance to the conductor formed on the second ground layer is longer in a stacking direction of the first ground layer, the second ground layer, and the conductive pattern layer than a distance to the conductor formed on the first ground layer, and at least a portion of the first conductive pattern is provided in the first region.

[0005] One aspect of the present disclosure may be realized as a semiconductor integrated circuit that realizes part or all of a high-frequency circuit, or as a communication system including a high-frequency circuit. [Brief description of the drawings]

[0006] [Figure 1] FIG. 1 is a cross-sectional view that illustrates a filter formed of a conductive pattern. [Diagram 2] FIG. 2 is a plan view that illustrates an example of a bandpass filter formed of a conductive pattern. [Diagram 3] FIG. 3 is a plan view illustrating a configuration of a wireless device according to an embodiment of the present disclosure. [Figure 4] FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. [Diagram 5] FIG. 5 is a plan view illustrating a configuration of a wireless device according to a modified example of the embodiment of the present disclosure. [Figure 6] FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0007] A wireless device extracts a specific frequency band component from a received radio wave, for example, and performs various signal processing. A filter is one means for extracting a signal wave of a specific frequency band.

[0008] While there are various types of filters, from the viewpoint of miniaturization of wireless devices, stepped impedance resonators (SIRs) are sometimes used as filters. SIRs are a type of pattern filter made up of conductive patterns formed on a substrate, and are configured by combining a low impedance section with a wide pattern width and a high impedance section with a narrow pattern width.

[0009] [Problem that this disclosure aims to solve] When two SIRs are formed on the same layer of a multi-layer board, the size of the multi-layer board needs to be increased in order to secure space for arranging both SIRs. In contrast, in the wireless device described in Patent Document 1, the two SIRs are formed on different layers. Therefore, there is no need to increase the size of the multi-layer board, and the wireless device can be made compact.

[0010] However, the width of the conductive pattern constituting the SIR is closely related to the frequency characteristics of the SIR, and therefore, even in the wireless device described in Patent Document 1, the width of the conductive pattern becomes too wide depending on the cutoff frequency to be set, making it difficult to arrange the conductive pattern or increasing the size of the wireless device.

[0011] One way to solve this problem is to narrow the width of the conductive pattern, but this makes it difficult to set an arbitrary characteristic impedance in the SIR and makes it difficult to form the conductive pattern. Therefore, in a pattern filter, it is difficult to freely design the cutoff frequency or passband width while maintaining an arbitrary characteristic impedance.

[0012] The present disclosure has been made to solve the above-mentioned problems, and has as its purpose to provide a high-frequency circuit and a wireless device that can improve the freedom of device design while achieving a desired characteristic impedance in a pattern filter.

[0013] [Effects of this disclosure] According to the present disclosure, it is possible to improve the degree of freedom in device design while realizing a desired characteristic impedance in a pattern filter.

[0014] [Description of the embodiments of the present disclosure] First, the contents of the embodiments of the present disclosure will be listed and described.

[0015] (1) A high-frequency circuit according to an embodiment of the present disclosure includes a first ground layer having a conductor formed thereon, a second ground layer having a conductor formed thereon, and a conductive pattern layer having a first conductive pattern formed thereon, the first ground layer, the second ground layer, and the conductive pattern layer being stacked, the conductive pattern layer including a first region in a stacking direction of the first ground layer, the second ground layer, and the conductive pattern layer, the first region being a region in which a distance to the conductor formed on the second ground layer is longer than a distance to the conductor formed on the first ground layer, and at least a portion of the first conductive pattern is provided in the first region.

[0016] When a filter is formed using conductive patterns, the characteristic impedance and frequency characteristics of the filter change depending on the width of the conductive patterns, and it may not be possible to obtain desired characteristics.

[0017] In contrast, by providing at least a portion of the first conductive pattern in the first region, the distance from the first conductive pattern to the ground layer can be increased. Increasing the distance from the first conductive pattern to the ground layer increases the characteristic impedance of the first conductive pattern. Therefore, the reduction in the characteristic impedance of the first conductive pattern caused by increasing the width of the first conductive pattern can be offset by increasing the distance from the first conductive pattern to the ground layer. This allows the width of the first conductive pattern to be increased while maintaining a desired characteristic impedance. Therefore, the desired impedance can be realized in the pattern filter, while improving the degree of freedom in device design.

[0018] Furthermore, when forming an SIR with coupled lines using conductive patterns, a wide passband width requires long coupled lines, which increases the size of the board. To shorten the length of the coupled lines while maintaining the passband width, the degree of coupling of the coupled lines must be strengthened. To strengthen the degree of coupling, the width of the conductive patterns can be increased. This makes it possible to set the desired passband width while shortening the length of the coupled lines. On the other hand, the characteristic impedance of the SIR decreases by the amount that the width of the conductive patterns is increased.

[0019] In contrast, by providing at least a portion of the first conductive pattern in the first region, the reduction in the characteristic impedance of the first conductive pattern caused by widening the width of the first conductive pattern can be offset by increasing the distance from the first conductive pattern to the ground layer. This allows the length of the coupled line to be shortened while maintaining the desired characteristic impedance. Therefore, the desired impedance can be achieved in the pattern filter, while the degree of freedom in device design can be improved.

[0020] (2) A second conductive pattern separate from the first conductive pattern may be further formed on the conductive pattern layer, the conductive pattern layer may include a second region in which the distance to the conductor formed on the first ground layer is longer in the stacking direction than the distance to the conductor formed on the second ground layer, and the second conductive pattern may be provided in the second region.

[0021] With this configuration, the first conductive pattern provided in the first region and the second conductive pattern provided in the second region have different distances to the ground layer. Therefore, the first conductive pattern and the second conductive pattern formed on the same substrate can be used to configure two filters with significantly different cutoff frequencies or passband widths. This further improves the freedom of device design.

[0022] (3) The first conductive pattern may be configured to extend across the first region and the second region.

[0023] With this configuration, it is possible to provide a filter with high design freedom in which the first conductive pattern is provided across the first region and the second region in the conductive pattern layer.

[0024] (4) The first conductive pattern may constitute a part of a first filter, and the second conductive pattern may constitute a part of a second filter, and a fractional bandwidth of the second filter may be narrower than a fractional bandwidth of the first filter.

[0025] In a bandpass filter, the bandwidth ratio is expressed by the value obtained by dividing the passband width by the center frequency. A bandpass filter with a wide bandwidth ratio requires a long coupled line, while a bandpass filter with a narrow bandwidth ratio requires a short coupled line. By configuring the bandwidth ratio of the second filter to be narrower than the bandwidth ratio of the first filter, the first conductive pattern constituting the first filter with a wide bandwidth ratio can be arranged in a first region where the length of the coupled line can be made longer, and the second conductive pattern constituting the second filter with a narrow bandwidth ratio can be arranged in a second region where the length of the coupled line can be made shorter, thereby improving the degree of freedom in device design while realizing a desired bandwidth ratio in each filter.

[0026] (5) The first region may be configured so that a characteristic impedance of the first conductive pattern is a constant value with respect to a frequency of a target signal.

[0027] With this configuration, it is possible to improve the degree of freedom in device design while realizing a desired impedance in a transmission path of a target signal including a filter.

[0028] A wireless device according to an embodiment of the present disclosure includes the above-described high-frequency circuit.

[0029] With this configuration, it is possible to improve the degree of freedom in device design while realizing a desired characteristic impedance in the pattern filter in a wireless device.

[0030] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals, and the description thereof will not be repeated. In addition, at least some of the embodiments described below may be arbitrarily combined.

[0031] First, the background to the conception of the high-frequency circuit and wireless device of the present disclosure will be described.

[0032] Fig. 1 is a cross-sectional view that shows a schematic diagram of a filter formed of a conductive pattern. Referring to Fig. 1, filter 100 includes linear conductive pattern 1002 formed on a surface of plate-like dielectric layer 1001, and ground layer 1003 formed on a rear surface of dielectric layer 1001. Filter 100 is a pattern filter with a microstrip line structure. In filter 100, the constants of the LC circuit that constitutes the filter are replaced with conductive patterns. Specifically, L (coil) is replaced with a conductive pattern of high impedance, and C (capacitor) is replaced with a conductive pattern of low impedance.

[0033] Here, the characteristic impedance of the conductive pattern 1002 is mainly affected by the width W of the conductive pattern 1002 and the distance H from the conductive pattern 1002 to the ground layer 1003. If the distance H is constant, the wider the width W, the lower the characteristic impedance, and the narrower the width W, the higher the characteristic impedance.

[0034] On the other hand, if the width W is constant, the longer the distance H, the higher the characteristic impedance, and the shorter the distance H, the lower the characteristic impedance. Therefore, in designing the filter 100, the width W and distance H of the conductive pattern 1002 are adjusted to set an arbitrary characteristic impedance.

[0035] However, if the width W of the conductive pattern 1002 is too wide, it becomes difficult to arrange the conductive pattern 1002 on the substrate due to space limitations, and the size of the filter 1000 also increases. On the other hand, if the width W of the conductive pattern 1002 is too narrow, it becomes difficult to manufacture the conductive pattern 1002. Therefore, depending on the characteristic impedance of the conductive pattern 1002 to be set in the filter 100, it may be difficult to achieve the desired width W of the conductive pattern 1002.

[0036] 2 is a plan view showing an example of a bandpass filter formed of a conductive pattern. Referring to FIG. 2, bandpass filter 200 is a stepped impedance resonator (SIR) formed by combining low impedance parts 2001A and 2001B formed of a conductive pattern with a width W1 and high impedance parts 2002A and 2002B formed of a conductive pattern with a width W2 narrower than width W1. High impedance part 2002A and high impedance part 2002B are arranged with a small gap between them to form coupled line 2003. Low impedance parts 2001A and 2001B and high impedance parts 2002A and 2002B are all formed of conductive pattern 1002 as shown in FIG.

[0037] Low impedance sections 2001A, 2001B have different characteristic impedances from high impedance sections 2002A, 2002B. In the SIR, the resonance condition, i.e., the cutoff frequency, is set by adjusting the width and length of low impedance sections 2001A, 2001B and the width and length of high impedance sections 2002A, 2002B.

[0038] Generally, the coupled lines of a bandpass filter are coupled through an electromagnetic field, but the coupled line 2003 of the bandpass filter 200 shown in FIG. 2 is connected to the ground layer 1003 as shown in FIG. 1 in order to pass a current through it to strengthen the coupling by the magnetic field.

[0039] Here, the length of the coupled line 2003 affects the passband width of the bandpass filter. The shorter the coupled line 2003, the narrower the passband width, and the longer the coupled line 2003, the wider the passband width. Therefore, in designing the bandpass filter 200 using the SIR having the coupled line 2003, the length of the coupled line 2003 is adjusted to set an arbitrary passband width.

[0040] On the other hand, if the coupled line 2003 becomes too short, it becomes difficult to form the coupled line 2003 on the substrate in terms of manufacturing. In this case, it is possible to lengthen the coupled line 2003 and weaken the degree of coupling of the coupled line 2003 accordingly. In order to weaken the degree of coupling of the coupled line 2003, it is necessary to narrow the width of the conductive pattern. However, narrowing the width of the conductive pattern changes the characteristic impedance, and the cutoff frequency of the bandpass filter deviates from the set value.

[0041] If the coupled line 2003 becomes too long, the size of the board becomes large in order to secure space for arranging the coupled line 2003. In this case, it is possible to shorten the coupled line 2003 and increase the degree of coupling of the coupled line 2003 accordingly. In order to increase the degree of coupling of the coupled line 2003, it is necessary to increase the width of the conductive pattern. However, if the width of the conductive pattern is increased, the characteristic impedance changes, and the cutoff frequency of the bandpass filter deviates from the set value.

[0042] Therefore, depending on the passband width to be set, it may be difficult to set the coupled line 2003 to a desired length.

[0043] As described above, in the conventional technology, when attempting to form a filter using a conductive pattern, there is a restriction on the width of the conductive pattern or the length of the coupled line, making it difficult to realize a desired cutoff frequency or passband width.

[0044] Hereinafter, high-frequency circuits and wireless devices according to embodiments of the present disclosure will be described.

[0045] 3 is a plan view showing a configuration of a wireless device according to an embodiment of the present disclosure, in which the wireless device 1 is mounted on an automobile, as an example.

[0046] 3, wireless device 1 includes high-frequency circuit 2, an input / output terminal 1A, a television input / output terminal 1B, a GPS (Global Positioning System) input / output terminal 1C, and a radio input / output terminal 1D.

[0047] The input / output terminal 1A is connected to an antenna (not shown) via a high-frequency cable 1E. The antenna is installed, for example, on the windshield, rear window, or roof panel of an automobile, and receives an RF signal (Radio Frequency Signal).

[0048] The television input / output terminal 1B, the GPS input / output terminal 1C, and the radio input / output terminal 1D are each connected to an in-vehicle device (not shown) capable of providing a service using a wireless signal of a corresponding frequency band. For example, the television input / output terminal 1B is connected to an in-vehicle device corresponding to a television, such as a television tuner, the GPS input / output terminal 1C is connected to an in-vehicle device corresponding to a GPS, such as a car navigation system, and the radio input / output terminal 1D is connected to an in-vehicle device corresponding to an AM / FM radio, such as a radio tuner.

[0049] The high frequency circuit 2 separates the radio waves received at the input / output terminal 1A into signals for the in-vehicle television unit, the in-vehicle GPS unit, and the in-vehicle radio unit. The high frequency circuit 2 may be configured to combine RF signals transmitted from the in-vehicle unit corresponding to the television and the in-vehicle unit corresponding to the GPS, and output the combined signals from the input / output terminal 1A.

[0050] Fig. 4 is a cross-sectional view taken along line IV-IV in Fig. 3. For ease of understanding, Fig. 4 shows the plan view shown in Fig. 3 with dashed lines excluding the filter.

[0051] With reference to FIG. 4, high-frequency circuit 2 is formed of a multilayer substrate 10.

[0052] [Multilayer board] Multilayer substrate 10 is, for example, a printed wiring board. Multilayer substrate 10 includes, in order from the main surface side in the stacking direction, layer L1 on which conductive pattern 201 is formed, dielectric layer 101A, first ground layer 102, dielectric layer 101B, intermediate ground layer 103, dielectric layer 101C, and second ground layer 104.

[0053] The layer L1 on which the conductive pattern 201 is formed constitutes the main surface of the multilayer substrate 10 and includes a conductive pattern, etc. Hereinafter, the layer on which the conductive pattern 201 is formed is referred to as a conductive pattern layer. The conductive pattern 201 is an example of a first conductive pattern.

[0054] The dielectric layer 101A is disposed between the conductive pattern layer L1 and the first ground layer 102, and insulates the conductive pattern layer L1 from the first ground layer 102. The material of the dielectric layer 101A is, for example, glass epoxy resin. The same is true for the dielectric layers 101B and 101C described below.

[0055] The first ground layer 102 is a layer different from the conductive pattern layer L1 and is located below the conductive pattern layer L1. In the multilayer substrate 10, the first ground layer 102 is disposed between the dielectric layer 101A and the dielectric layer 101B. The first ground layer 102 is a layer on which a thin conductor such as copper foil is formed. The same is true for the intermediate ground layer 103 and the second ground layer 104 described below. The first ground layer 102 has a shape in which the conductor has been partially removed. The removed portion is hollow.

[0056] The dielectric layer 101B is disposed between the first ground layer 102 and the intermediate ground layer 103, and insulates the first ground layer 102 from the intermediate ground layer 103.

[0057] Intermediate ground layer 103 is disposed between dielectric layer 101B and dielectric layer 101C. Intermediate ground layer 103 has a shape in which a part of the conductor is removed. The removed part is hollow.

[0058] The dielectric layer 101C is disposed between the intermediate ground layer 103 and the second ground layer 104, and insulates the intermediate ground layer 103 from the second ground layer 104.

[0059] The second ground layer 104 is a layer different from the conductive pattern layer L1 and the first ground layer 102, and is located below the first ground layer 102. In the multilayer substrate 10, the second ground layer 104 is disposed below the dielectric layer 101C, and constitutes the back surface of the multilayer substrate 10. Therefore, in the lamination direction, the distance from the conductive pattern layer L1 to the second ground layer 104 is longer than the distance from the conductive pattern layer L1 to the first ground layer 102. The second ground layer 104 is provided over substantially the entire area of ​​the multilayer substrate 10 in a plan view. The second ground layer 104 is electrically connected to the first ground layer 102 and the intermediate ground layer 103 by vias.

[0060] 3 and 4, in the lamination direction of the first ground layer 102, the second ground layer 104, and the conductive pattern layer L1, the distance to the conductor formed on the second ground layer 104 is longer than the distance to the conductor formed on the first ground layer 102. short The multi-layer substrate 10 includes a first region 105, which is a region of the first and second ground layers 102 and 103. For example, the first region 105 is a region facing the second ground layer 104 in the stacking direction of the layers in the multi-layer substrate 10. Specifically, the first region 105 is rectangular in plan view and is a region of any size provided in the conductive pattern layer L1. As shown in FIG. 4, in the first ground layer 102 and the intermediate ground layer 103, no conductor is provided in the region corresponding to the first region 105, and the region is hollow. Below the first region 105 in the stacking direction, the dielectric layers 101A, 101B, and 101C and the second ground layer 104 are arranged.

[0061] In the lamination direction of the first ground layer 102, the second ground layer 104, and the conductive pattern layer L1, the distance to the conductor formed on the first ground layer 102 is longer than the distance to the conductor formed on the second ground layer 104. short The first ground layer 102 includes a second region 107, which is a region of the first region 105. For example, the second region 107 is a region facing the first ground layer 102 in the stacking direction of the layers in the multilayer substrate 10. Specifically, the second region 107 is a region of the conductive pattern layer L1 other than the first region 105. The second region 107 does not overlap with the first region 105 in the conductive pattern layer L1 and is a separate region. As shown in FIG. 4, a conductor is provided in the region of the first ground layer 102 corresponding to the second region 107. The dielectric layer 101A and the first ground layer 102 are arranged below the second region 107 in the stacking direction.

[0062] [filter] 3 again, the conductive pattern formed on the conductive pattern layer L1 of the multilayer substrate 10 constitutes a part of a filter. In the multilayer substrate 10, the conductive pattern 201 constitutes a part of a television filter. Specifically, the television filter is constituted by the conductive pattern 201 and the second ground layer 104. The television filter is an example of a first filter. The television filter is set so that the passband is, for example, 470 MHz to 710 MHz. In this case, the television filter has a passband width of 240 MHz, a center frequency of 590 MHz, and a fractional bandwidth of 0.41.

[0063] The conductive pattern 201 includes low impedance portions 2011 and 2012 and high impedance portions 2013 and 2014.

[0064] The low impedance sections 2011 and 2012 are roughly rectangular in plan view and are arranged next to each other with a gap between them.

[0065] The wireless device 1 further includes capacitors 1F1 and 1F2. The low impedance unit 2011 is connected to the input / output terminal 1A via the capacitor 1F1. The low impedance unit 2012 is connected to the television input / output terminal 1B via the capacitor 1F2.

[0066] The width of the conductive pattern in the high impedance parts 2013 and 2014 is narrower than that in the low impedance parts 2011 and 2012. The width and length of the conductive pattern in the high impedance parts 2013 and 2014 and the width and length of the conductive pattern in the low impedance parts 2011 and 2012 are appropriately set in accordance with the desired cutoff frequency.

[0067] High impedance sections 2013, 2014 are roughly L-shaped in a plan view, and are disposed side by side between low impedance sections 2011, 2012. Parts of high impedance sections 2013, 2014 are disposed in parallel with a small gap therebetween, forming coupled line 2016. In coupled line 2016, high impedance sections 2013, 2014 are electromagnetically coupled.

[0068] The length of the resonator consisting of the low impedance parts 2011 and 2012 and the high impedance parts 2013 and 2014 is set to ¼ the wavelength at the center frequency of the passband, although the length of the resonator may be ½ the wavelength at the center frequency of the passband.

[0069] At least a portion of the conductive pattern 201 is provided in the first region 105 and is electrically connected to the second ground layer 104. For example, the conductive pattern 201 is disposed within the first region 105, and is not disposed outside the first region 105. A coupled line 2016 in the conductive pattern 201 is connected to a ground pattern 106 formed on the conductive pattern layer L1. One or more vias 2017 are provided in the ground pattern 106. The vias 2017 electrically connect the ground pattern 106 and the second ground layer 104. Note that "L4 GND" in FIG. 3 means that the conductive pattern 201 uses the second ground layer 104, which corresponds to the fourth wiring layer, as a reference ground.

[0070] As shown in Fig. 3 and Fig. 4, a conductive pattern 202 separate from the conductive pattern 201 is further formed on the conductive pattern layer L1. The conductive pattern 202 is an example of a second conductive pattern. In the multilayer substrate 10, the conductive pattern 202 constitutes a part of the GPS filter. Specifically, the GPS filter is constituted by the conductive pattern 202 and the first ground layer 102. The GPS filter is an example of the second filter.

[0071] The conductive pattern 202 is provided in the second region 107 and is electrically connected to the first ground layer 102. For example, the conductive pattern 202 is disposed within the second region 107, and is not disposed outside the second region 107. The GPS filter is set to have a passband of, for example, 1525 MHz to 1625 MHz. In this case, the GPS filter has a passband width of 100 MHz, a center frequency of 1575 MHz, and a fractional bandwidth of 0.06. That is, the fractional bandwidth of the GPS filter is narrower than that of the TV filter.

[0072] Specifically, the conductive pattern 202 includes low impedance portions 2021 and 2022 and high impedance portions 2023 and 2024.

[0073] Low impedance sections 2021 and 2022 are roughly rectangular in plan view and are arranged linearly with a gap between them.

[0074] The wireless device 1 further includes capacitors 1F3 and 1F4. The low impedance unit 2021 is connected to the input / output terminal 1A via the capacitor 1F3. The low impedance unit 2022 is connected to the GPS input / output terminal 1C via the capacitor 1F4.

[0075] The width of the conductive pattern in high impedance parts 2023 and 2024 is narrower than that in low impedance parts 2021 and 2022. The width and length of the conductive pattern in high impedance parts 2023 and 2024 and the width and length of the conductive pattern in low impedance parts 2021 and 2022 are appropriately set according to the desired cutoff frequency.

[0076] High impedance sections 2023, 2024 are roughly L-shaped in a plan view, and are arranged side by side between low impedance sections 2021, 2022. Parts of high impedance sections 2023, 2024 are arranged in parallel with a small gap therebetween, forming coupled line 2026. In coupled line 2026, high impedance sections 2023, 2024 are electromagnetically coupled.

[0077] The length of the resonator consisting of the low impedance parts 2021 and 2022 and the high impedance parts 2023 and 2024 is set to ¼ the wavelength at the center frequency of the passband, although the length of the resonator may be ½ the wavelength at the center frequency of the passband.

[0078] The coupled line 2026 is connected to the ground pattern 108 formed on the conductive pattern layer L1. The ground pattern 108 is provided with one or more vias 2027. The vias 2027 electrically connect the ground pattern 108 and the first ground layer 102. Note that "L2 GND" in Fig. 3 means that the conductive pattern 202 uses the first ground layer 102, which corresponds to the second wiring layer, as a reference ground.

[0079] The high-frequency circuit 2 further includes a radio filter provided in a region of the second region 107 separate from the conductive pattern 202. Generally, a radio filter is a low-pass filter (LPF) made up of an inductor and a capacitor, but in the radio filter 203 shown in Fig. 3, the inductor is made up of a coil and a pattern, and is connected to the radio input / output terminal 1D. The electric circuit of the radio filter 203 has a well-known configuration, so a detailed description will not be given.

[0080] As described above, in the high-frequency circuit 2 and the wireless device 1 according to the present embodiment, the conductive pattern 201 is provided in the first region 105, so that the distance from the conductive pattern 201 to the conductor formed on the second ground layer 104 can be increased. If the distance from the conductive pattern 201 to the conductor formed on the second ground layer 104 is increased, the characteristic impedance of the conductive pattern 201 increases. Therefore, the decrease in the characteristic impedance of the conductive pattern 201 caused by increasing the width of the conductive pattern 201 can be offset by increasing the distance from the conductive pattern 201 to the conductor formed on the second ground layer 104. This allows the width of the conductive pattern 201 to be increased while maintaining a desired characteristic impedance. Therefore, the desired impedance can be realized in the pattern filter, and the degree of freedom in device design can be improved.

[0081] Furthermore, when an SIR having a coupled line is formed by a conductive pattern, the conductive pattern 201 is configured to be provided in the first region 105, so that a reduction in the characteristic impedance of the conductive pattern 201 caused by widening the width of the conductive pattern 201 can be offset by increasing the distance from the conductive pattern 201 to the conductor formed in the second ground layer 104. This allows the coupled line 2016 to be shortened while maintaining a desired characteristic impedance. Therefore, the desired impedance can be realized in the pattern filter, and the degree of freedom in device design can be improved.

[0082] (Modification) Fig. 5 is a plan view showing a configuration of a wireless device according to a modified example of the embodiment of the present disclosure. The wireless device shown in Fig. 5 has smaller low impedance portions 2011 and 2012 and first region 105 in conductive pattern 201 than the wireless device shown in Fig. 3.

[0083] Fig. 6 is a cross-sectional view taken along line VI-VI in Fig. 5. For ease of understanding, in Fig. 6, the plan view shown in Fig. 5 is shown by dashed lines except for the conductive patterns.

[0084] 5 and 6, in wireless device 1 according to the modified example, conductive pattern 201 is provided across first region 105 and second region 107. Specifically, in conductive pattern 201, high impedance portions 2013 and 2014 are provided in first region 105, and low impedance portions 2011 and 2012 are provided in second region 107.

[0085] Even in this case, a portion of the conductive pattern 201 faces the second ground layer 104 in the stacking direction. Therefore, the distance between the conductive pattern 201 and the reference ground can be increased, and the degree of freedom in device design can be further improved while achieving a desired characteristic impedance.

[0086] The above-described embodiments should be considered to be illustrative and not restrictive in all respects. The scope of the present disclosure is defined by the claims, not the above description, and is intended to include all modifications within the meaning and scope of the claims.

[0087] In the conductive pattern layer L1, the position of the first region 105 is not particularly limited. The first region 105 may be provided so that the characteristic impedance of the conductive pattern 201 is a constant value with respect to the frequency of the target signal, i.e., the RF signal received by the antenna connected to the input / output terminal 1A. For example, the first region 105 is preferably provided so that the fluctuation range of the characteristic impedance of the conductive pattern 201 with respect to the frequency fluctuation of the RF signal received by the antenna connected to the input / output terminal 1A is less than 5 percent, more preferably so that the fluctuation range is less than 3 percent, and even more preferably so that the fluctuation range is less than 1 percent.

[0088] In the above description, the high-frequency circuit 2 includes the radio filter 203. However, the high-frequency circuit 2 does not necessarily have to include the radio filter 203.

[0089] In the above description, the TV filter including the conductive pattern 201 and the GPS filter including the conductive pattern 202 are SIRs having a coupled line. However, in the high-frequency circuit 2, the filters are not limited to SIRs having a coupled line. The filters may be SIRs consisting of a single line, or may be pattern filters consisting of a conductor pattern with a constant width. The filter is formed by a conductor pattern with a constant width on the conductive pattern layer L1 of the multilayer substrate 10, and is provided in the first region 105 facing the second ground layer 104 in the lamination direction.

[0090] In the above description, as shown in FIG. 3, the conductive patterns 201 and 202 are formed on the main surface (layer L1 on which the filter is formed) of the multilayer substrate 10. However, the layer on which the conductive patterns 201 and 202 are formed is not limited to this. The conductive patterns 201 and 202 may be formed on a layer lower than the main surface, that is, on an inner layer of the multilayer substrate 10. For example, in the multilayer substrate 10 shown in FIG. 3, the conductive pattern layer L1 may be disposed on a layer one layer lower than the main surface (the layer on which the first ground layer 102 is disposed in FIG. 4). In this case, the first ground layer may be disposed on the main surface, two layers lower than the main surface (the layer on which the intermediate ground layer 103 is disposed in FIG. 4), or may be disposed on the main surface. In addition, when the first ground layer is disposed on the main surface, the second ground layer may be disposed on the main surface, two layers lower than the main surface (the layer on which the intermediate ground layer 103 is disposed in FIG. 4). Both the first ground layer 102 and the second ground layer 104 may be disposed on a layer higher than the conductive pattern layer L1, or may be disposed on a layer lower than the conductive pattern layer L1. Also, one of the first ground layer 102 and the second ground layer 104 may be arranged above the conductive pattern layer L1, and the other may be arranged below the conductive pattern layer L1. In short, it is only necessary that the distance from the conductive pattern layer L1 to the first ground layer 102 is different from the distance from the conductive pattern layer L1 to the second ground layer 104, and the arrangement of the conductive pattern layer L1, the first ground layer 102, and the second ground layer 104 is not limited to the example shown in FIG.

[0091] In the above description, the first ground layer 102 has a shape in which the conductor is partially removed as shown in FIG. 3. However, the first ground layer 102 and the intermediate ground layer 103 are not limited to this. For example, when one of the first ground layer 102 and the second ground layer 104 is arranged above the conductive pattern layer L1 and the other is arranged below the conductive pattern layer L1, and the distance from the conductive pattern layer L1 to the second ground layer 104 is longer than the distance from the conductive pattern layer L1 to the first ground layer 102, the first ground layer 102 may have a shape in which the conductor is formed on the entire surface. In this case, the conductive pattern layer L1 is entirely the first region 105 and does not include the second region 107. In short, it is sufficient that the conductive pattern layer L1 includes a first region 105 in which the distance to a conductor formed on the second ground layer 104 is longer than the distance to a conductor formed on the first ground layer 102, and that at least a portion of the conductive pattern 201 is formed in the first region 105.

[0092] In the above description, the case has been described where multilayer substrate 10 includes intermediate ground layer 103. However, multilayer substrate 10 need only include first ground layer 102 and second ground layer 104, and does not necessarily have to include intermediate ground layer 103. When multilayer substrate 10 includes intermediate ground layer 103, multilayer substrate 10 may include multiple intermediate ground layers 103.

[0093] In the above description, the first ground layer 102 is disposed between the dielectric layers 101A and 101B, and the second ground layer 104 is disposed on the back surface of the multilayer substrate 10. However, the arrangement of the first ground layer 102 and the second ground layer 104 is not limited to this. The second ground layer 104 may be disposed in a layer lower than the first ground layer 102.

[0094] In the above description, the wireless device 1 is mounted on an automobile. However, the wireless device 1 is not limited to this. The wireless device 1 may be mounted on a transport device other than an automobile, may be installed in a building, or may be a portable radio. In short, the wireless device 1 may be any device that performs wireless communication.

[0095] The above description includes the following additional features. [Appendix 1] A multilayer board; a filter formed by a conductive pattern on the multilayer substrate; a stepped impedance resonator having a coupled line formed by a conductive pattern in a layer of the multilayer substrate on which the filter is formed, The multilayer substrate comprises: a first ground layer disposed on a layer different from the filter; a second ground layer disposed on a layer different from the filter and the first ground layer, a distance from the layer on which the filter is formed to the second ground layer is longer than a distance from the layer on which the filter is formed to the first ground layer; the layer in which the filter is formed includes a first region facing the second ground layer in a lamination direction, The stepped impedance resonator is provided in the first region.

[0096] [Appendix 2] a multilayer substrate including a first ground layer and a second ground layer disposed on a layer different from the first ground layer; a filter formed of a conductive pattern and disposed on a layer of the multilayer board different from the first ground layer and the second ground layer; a distance from the layer on which the filter is formed to the second ground layer is longer than a distance from the layer on which the filter is formed to the first ground layer; the layer in which the filter is formed includes a first region facing the second ground layer in a lamination direction, The filter is provided in the first area. [Explanation of symbols]

[0097] 1 Radio equipment 2. High-frequency circuits 1A input / output terminal 1B TV input / output terminal 1C GPS input / output terminal 1D Radio input / output terminal 1E High Frequency Cable 1F1~1F4 capacitors 10 Multilayer board L1: Layer on which the conductive pattern is formed (conductive pattern layer) 100 Filters 101, 101A, 101B, 101C Dielectric layer 102 First Ground Layer 103 Intermediate Ground Layer 104 Second Ground Layer 105 First Area 106,108 Ground Pattern 107 Second Area 1001 Dielectric layer 1002 Conductive pattern 1003 Ground Layer 200 Bandpass Filter 201 Conductive Pattern 2001A, 2001B Low impedance section 2002A, 2002B High impedance section 2003 Coupled Line 2011,2012 Low impedance section 2013,2014 High impedance section 2016 Coupled Lines 2017 Beer 202 Conductive Pattern 2021,2022 Low impedance section 2023,2024 High impedance section 2026 Coupled Line 2027 Beer 203 Radio Filter

Claims

1. a first ground layer on which a first conductor is formed; a second ground layer on which a second conductor is formed; a conductive pattern layer on which a first conductive pattern is formed; the first ground layer, the second ground layer, and the conductive pattern layer are laminated, a distance from the conductive pattern layer to the second ground layer is longer than a distance from the conductive pattern layer to the first ground layer; the conductive pattern layer includes a first region facing the second conductor and a second region facing the first conductor; In a lamination direction of the first ground layer, the second ground layer, and the conductive pattern layer, the first conductor and the second conductor are separated by a shortest distance from the first region to the second conductor, and the second conductor is separated by a shortest distance from the first region to the first ground layer, the second ground layer, and the conductive pattern layer. In the stacking direction, of the first conductor and the second conductor, the conductor having the shortest distance between the first conductor and the second region is the first conductor, At least a portion of the first conductive pattern is provided in the first region; a second conductive pattern separate from the first conductive pattern is further formed on the conductive pattern layer; the second conductive pattern is provided in the second region, the first conductive pattern constitutes a part of a first filter; the second conductive pattern constitutes a part of a second filter; A high-frequency circuit, wherein the fractional bandwidth of the second filter is narrower than the fractional bandwidth of the first filter.

2. The high frequency circuit according to claim 1 , wherein the first conductive pattern is provided across the first region and the second region.

3. 3. The high frequency circuit according to claim 1, wherein the first region is provided so that a characteristic impedance of the first conductive pattern has a constant value for a frequency of a target signal.

4. A characteristic impedance of at least a portion of the first conductive pattern is determined by a distance from the first region to the second conductor; 4. The high-frequency circuit according to claim 1, wherein a characteristic impedance of the second conductive pattern is determined by a distance from the second region to the first conductor.

5. A cavity in which the first conductor is not provided is formed in a portion of the first ground layer facing the first region in the stacking direction, 5. The high-frequency circuit according to claim 4, wherein the first conductor is formed in a portion of the first ground layer facing the second region in the stacking direction.

6. A wireless device comprising the high-frequency circuit according to claim 1 .

7. a first ground layer on which a first conductor is formed; a second ground layer on which a second conductor is formed; a conductive pattern layer on which a first conductive pattern is formed; the first ground layer, the second ground layer, and the conductive pattern layer are laminated, a distance from the conductive pattern layer to the second ground layer is longer than a distance from the conductive pattern layer to the first ground layer; the conductive pattern layer includes a first region facing the second conductor and a second region facing the first conductor; In a lamination direction of the first ground layer, the second ground layer, and the conductive pattern layer, the first conductor and the second conductor are separated by a shortest distance from the first region to the second conductor, and the second conductor is separated by a shortest distance from the first region to the first ground layer, the second ground layer, and the conductive pattern layer. In the stacking direction, of the first conductor and the second conductor, the conductor having the shortest distance between the first conductor and the second region is the first conductor, At least a portion of the first conductive pattern is provided in the first region; a second conductive pattern separate from the first conductive pattern is further formed on the conductive pattern layer; the second conductive pattern is provided in the second region, the first conductive pattern constitutes a part of a first filter; the second conductive pattern constitutes a part of a second filter; a fractional bandwidth of the second filter is narrower than a fractional bandwidth of the first filter; a high-frequency circuit, wherein the first filter is a stepped impedance resonator including a low-impedance section formed by a part of the first conductive pattern and a high-impedance section formed by another part of the first conductive pattern.

8. a first ground layer on which a first conductor is formed; a second ground layer on which a second conductor is formed; a conductive pattern layer on which a first conductive pattern is formed; the first ground layer, the second ground layer, and the conductive pattern layer are laminated, a distance from the conductive pattern layer to the second ground layer is longer than a distance from the conductive pattern layer to the first ground layer; the conductive pattern layer includes a first region facing the second conductor and a second region facing the first conductor; In a lamination direction of the first ground layer, the second ground layer, and the conductive pattern layer, the first conductor and the second conductor are separated by a shortest distance from the first region to the second conductor, and the second conductor is separated by a shortest distance from the first region to the first ground layer, the second ground layer, and the conductive pattern layer. In the stacking direction, of the first conductor and the second conductor, the conductor having the shortest distance between the first conductor and the second region is the first conductor, At least a portion of the first conductive pattern is provided in the first region; a second conductive pattern separate from the first conductive pattern is further formed on the conductive pattern layer; the second conductive pattern is provided in the second region, the first conductive pattern constitutes a part of a first filter; the second conductive pattern constitutes a part of a second filter; a fractional bandwidth of the second filter is narrower than a fractional bandwidth of the first filter; the first filter is a stepped impedance resonator including a low impedance section formed by a part of the first conductive pattern and a high impedance section formed by another part of the first conductive pattern, the high impedance portion is provided in the first region, The low impedance section is provided in the second region.

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