Semiconductor Device

Abstract

To provide a semiconductor device capable of having smaller thickness.SOLUTION: A semiconductor device includes a switching device B1 including a first device surface 6a and a second device surface 6b, which face the mutually opposite sides in a z-direction, and a drain electrode 71, a source electrode 72, and a gate electrode 73 disposed on the first device surface 6a, a first lead 1 electrically coupled to the drain electrode 71, a second lead 2 electrically coupled to the source electrode 72, a third lead 3 electrically coupled to the gate electrode 73, and a resin part 9 covering the switching device B1 and parts of the first to third leads 1 to 3 and having a first resin surface 91 facing the same side as the first device surface 6a and a second resin surface 92 facing the same side as the second device surface 6b. The first to third leads 1 to 3 are exposed from the first resin surface 91.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present disclosure relates to a semiconductor device. [Background technology]

[0002] Various configurations have been proposed for semiconductor devices including semiconductor elements such as transistors. Patent Document 1 shows an example of a conventional semiconductor device. The semiconductor device disclosed in this document includes a plurality of leads and a semiconductor element supported by the leads. The semiconductor element and each lead are electrically connected via wires. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent Publication No. 2021-027117 Summary of the Invention [Problem to be solved by the invention]

[0004] In the semiconductor device of this document, the leads, the semiconductor element, and the wires are arranged in the thickness direction of the leads, which increases the size of the semiconductor device in the thickness direction.

[0005] The present disclosure has been made in light of the above circumstances, and an object of the present disclosure is to provide a semiconductor device that can be made thinner. [Means for solving the problem]

[0006] The semiconductor device provided by the present disclosure comprises a switching device having a first device surface and a second device surface facing opposite each other in a thickness direction, and a drain electrode, a source electrode and a gate electrode arranged on the first device surface, a first lead conductively joined to the drain electrode, a second lead conductively joined to the source electrode, a third lead conductively joined to the gate electrode, and a resin portion covering the switching device and portions of each of the first to third leads, and having a first resin surface facing the same side as the first device surface and a second resin surface facing the same side as the second device surface, and the first to third leads are exposed from the first resin surface. Effect of the Invention

[0007] According to the present disclosure, it is possible to reduce the thickness of a semiconductor device.

[0008] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings. [Brief description of the drawings]

[0009] [Figure 1] FIG. 1 is a plan view showing a semiconductor device according to a first embodiment of the present disclosure. [Diagram 2] FIG. 2 is a bottom view showing the semiconductor device according to the first embodiment of the present disclosure. [Diagram 3] FIG. 3 is a plan view of a main part showing the semiconductor device according to the first embodiment of the present disclosure. [Figure 4] FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. [Diagram 5] FIG. 5 is a cross-sectional view taken along line VV in FIG. [Figure 6] FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. [Figure 7] FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. [Figure 8] FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. [Figure 9] FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. [Figure 10] FIG. 10 is a cross-sectional view taken along line XX in FIG. [Figure 11] FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. [Figure 12] FIG. 12 is a plan view showing a switching device of the semiconductor device according to the first embodiment of the present disclosure. [Figure 13] FIG. 13 is a bottom view showing the switching device of the semiconductor device according to the first embodiment of the present disclosure. [Figure 14] FIG. 14 is a cross-sectional view taken along line XIV-XIV in FIG. [Figure 15] FIG. 15 is a cross-sectional view taken along line XV-XV in FIG. [Figure 16] FIG. 16 is a cross-sectional view taken along line XVI-XVI in FIG. [Figure 17] FIG. 17 is a cross-sectional view taken along line XVII-XVII in FIG. [Figure 18] FIG. 18 is a bottom view showing a switching device of the semiconductor device according to the second embodiment of the present disclosure. [Figure 19] FIG. 19 is a cross-sectional view taken along line XIX-XIX in FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, preferred embodiments of the present disclosure will be described in detail with reference to the drawings.

[0011] The terms "first," "second," "third," etc. in this disclosure are used merely for identification purposes and are not intended to impose any ordering on their objects.

[0012] First Embodiment 1 to 11 show a semiconductor device according to a first embodiment of the present disclosure. A semiconductor device A1 of this embodiment includes a first lead 1, a second lead 2, a third lead 3, a fourth lead 4, a switching device B1, and a resin part 9.

[0013] FIG. 1 is a plan view showing the semiconductor device A1. FIG. 2 is a bottom view showing the semiconductor device A1. FIG. 3 is a plan view showing the main part of the semiconductor device A1. FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. 3. FIG. 5 is a cross-sectional view taken along line VV in FIG. 3. FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. 3. FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 3. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 3. FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 3. FIG. 10 is a cross-sectional view taken along line XX in FIG. 3. FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 3. In FIG. 3, for ease of understanding, the switching device B1 and the resin part 9 are shown by imaginary lines. In these figures, the z direction corresponds to the thickness direction of the present disclosure. The y direction corresponds to the first direction of the present disclosure. The x direction corresponds to the second direction of the present disclosure.

[0014] The shape of the semiconductor device A1 is not limited in any way, and in this embodiment, it is rectangular when viewed in the z direction. The size of the semiconductor device A1 is not limited in any way, and for example, the x direction dimension is about 10 mm to 15 mm, the y direction dimension is about 12 mm to 20 mm, and the z direction dimension is about 0.8 to 2.0 mm.

[0015] [Switching device B1] The switching device B1 is a device that switches a main current by application of a control voltage. Figures 12 to 17 show the switching device B1. The switching device B1 includes a semiconductor element 5, a sealing material 6, a drain electrode 71, a source electrode 72, a gate electrode 73, a source sense electrode 74, intermediate wiring layers 811 to 814, and connection portions 821 to 834.

[0016] Fig. 12 is a plan view showing switching device B1. Fig. 13 is a bottom view showing switching device B1. Fig. 14 is a cross-sectional view taken along line XIV-XIV in Fig. 13. Fig. 15 is a cross-sectional view taken along line XV-XV in Fig. 13. Fig. 16 is a cross-sectional view taken along line XVI-XVI in Fig. 13. Fig. 17 is a cross-sectional view taken along line XVII-XVII in Fig. 13.

[0017] The size of the switching device B1 is not limited in any way, and as an example, the x-direction dimension is about 5 mm to 10 mm, the y-direction dimension is about 6 mm to 12 mm, and the z-direction dimension is about 0.4 to 1.0 mm.

[0018] The semiconductor element 5 is an element that exerts the electrical function of the semiconductor device A1. In this embodiment, the semiconductor element 5 is a high electron mobility transistor (HEMT) having an electron transport layer made of gallium nitride (GaN), which is a type of nitride semiconductor. Unlike this embodiment, the switching device B1 may be composed of the semiconductor element 5.

[0019] The shape of the semiconductor element 5 is not limited in any way, and in this embodiment, it is rectangular when viewed in the z direction. The semiconductor element 5 has a plurality of internal electrodes 51, a plurality of internal electrodes 52, and an internal electrode 53. The plurality of internal electrodes 51, the plurality of internal electrodes 52, and the internal electrode 53 are all arranged on one side of the semiconductor element 5 in the z direction. Note that the following description is an example of a specific configuration of the plurality of internal electrodes 51, the plurality of internal electrodes 52, and the internal electrode 53, and is not limited in any way.

[0020] The multiple internal electrodes 51 are drain electrodes. Each of the multiple internal electrodes 51 has a generally trapezoidal or generally triangular shape extending elongately in the y direction. The multiple internal electrodes 51 are arranged at equal pitches in the x direction along one end of the semiconductor element 5 in the y direction.

[0021] The multiple internal electrodes 52 are source electrodes. Each of the multiple internal electrodes 52 has a generally trapezoidal or generally triangular shape extending long in the y direction. The multiple internal electrodes 52 are arranged at equal pitches in the x direction along the other end of the semiconductor element 5 in the y direction. The multiple internal electrodes 51 and the multiple internal electrodes 52 are alternately arranged in the x direction.

[0022] The internal electrode 53 is a gate electrode. The internal electrode 53 has a substantially rectangular shape and is smaller in dimension in the z direction than the internal electrodes 51 and 52. The internal electrode 53 is disposed along the other end of the semiconductor element 5 in the y direction and is separated from the multiple internal electrodes 52 in the x direction.

[0023] The encapsulant 6 is made of an insulating material and covers the entire semiconductor element 5. Both sides of the encapsulant 6 constitute a first device surface 6a and a second device surface 6b of the switching device B1. The first device surface 6a and the second device surface 6b are surfaces facing opposite each other in the z direction, and are flat surfaces in this embodiment.

[0024] The specific configuration of the sealing material 6 is not limited in any way, and in this embodiment, the sealing material 6 includes a first layer 61, a second layer 62, a third layer 63, and a fourth layer 64. The first layer 61, the second layer 62, the third layer 63, and the fourth layer 64 are, for example, plate materials made of glass epoxy resin. The first layer 61, the second layer 62, the third layer 63, and the fourth layer 64 are stacked on top of each other in the z direction. The first device surface 6a is formed by one side of the first layer 61. The second device surface 6b is formed by one side of the fourth layer 64. The sealing material 6 is not limited to a configuration including multiple layers of plate materials, and may be, for example, entirely formed by a single member.

[0025] In this embodiment, an opening is formed in the third layer 63, and the semiconductor element 5 is housed in this opening. The multiple internal electrodes 51, the multiple internal electrodes 52, and the internal electrode 53 of the semiconductor element 5 are located on the first device surface 6a side in the z direction.

[0026] The drain electrode 71, the source electrode 72, the gate electrode 73, and the source sense electrode 74 are disposed on the first device surface 6a. The materials of the drain electrode 71, the source electrode 72, the gate electrode 73, and the source sense electrode 74 are not limited in any way and may be made of a metal such as Cu, Ni, Au, or Al, and may be formed by, for example, plating.

[0027] The drain electrode 71 is disposed near one end in the y direction on the first device surface 6a. The shape of the drain electrode 71 is not limited in any way, and in the illustrated example, it is an elongated rectangle extending long in the x direction. The drain electrode 71 is electrically connected to the multiple internal electrodes 51 of the semiconductor element 5. The drain electrode 71 is located away from the semiconductor element 5 and the multiple internal electrodes 51 when viewed in the z direction.

[0028] The source electrode 72 is disposed near the other end in the y direction on the first device surface 6a. The shape of the source electrode 72 is not limited in any way, and in the illustrated example, the source electrode 72 has two pairs of sides extending along the x direction and the y direction, and a recess 721 is formed. The recess 721 is recessed from one side to the other side in the x direction, and from the other side to one side in the y direction. The source electrode 72 is electrically connected to the multiple internal electrodes 52 of the semiconductor element 5. The area of ​​the source electrode 72 is larger than the area of ​​the drain electrode 71. The source electrode 72 overlaps with the multiple internal electrodes 51 and the multiple internal electrodes 52 when viewed in the z direction.

[0029] The gate electrode 73 is disposed near the other end in the y direction on the first device surface 6a. In the illustrated example, the gate electrode 73 is located at a position accommodated in the recess 721 of the source electrode 72. The gate electrode 73 has a substantially rectangular shape when viewed in the z direction. The gate electrode 73 is electrically connected to the internal electrode 53 of the semiconductor element 5. The gate electrode 73 overlaps with the internal electrode 53 when viewed in the z direction.

[0030] The source sense electrode 74 is disposed near the other end in the y direction on the first device surface 6a. In the illustrated example, the source sense electrode 74 is located at a position accommodated in the recess 721 of the source electrode 72, and is disposed between a part of the source electrode 72 and the gate electrode 73 in the x direction. The source sense electrode 74 is substantially rectangular when viewed in the z direction, and has, for example, substantially the same shape and substantially the same size as the gate electrode 73. The source sense electrode 74 is electrically connected to one of the multiple internal electrodes 52 of the semiconductor element 5. The source sense electrode 74 overlaps one internal electrode 52 when viewed in the z direction.

[0031] The intermediate wiring layers 811 to 814 are disposed between the first layer 61 and the second layer 62. There are no limitations on the material of the intermediate wiring layers 811 to 814, and they are made of a metal typified by Cu, Ni, Au, or Al, and are formed by, for example, plating.

[0032] When viewed in the z-direction, the intermediate wiring layer 811 overlaps both the multiple internal electrodes 51 and the drain electrode 71. In the illustrated example, the intermediate wiring layer 811 has a rectangular shape.

[0033] The intermediate wiring layer 812 overlaps both the multiple internal electrodes 52 and the source electrode 72 when viewed in the z direction. In the illustrated example, the intermediate wiring layer 812 overlaps substantially the entirety of each of the three internal electrodes 52 on the left side in Fig. 13. The intermediate wiring layer 812 also overlaps parts of each of the two internal electrodes 52 on the right side in Fig. 13. In the illustrated example, the intermediate wiring layer 812 has a shape that includes a large rectangular portion and a small rectangular portion.

[0034] When viewed in the z-direction, the intermediate wiring layer 813 overlaps with both the internal electrode 53 and the gate electrode 73. In the illustrated example, the intermediate wiring layer 813 has a substantially rectangular shape and is smaller than the internal electrode 53 and the gate electrode 73.

[0035] 13 among the multiple internal electrodes 52, and the source sense electrode 74. In the illustrated example, the intermediate wiring layer 814 has a substantially rectangular shape and is smaller than the internal electrode 52 and the source sense electrode 74.

[0036] The connection parts 821-824 each penetrate the first layer 61 in the z-direction. The material of the connection parts 821-824 is not limited in any way, and they are made of a metal such as Cu, Ni, Au, or Al, and are formed by plating, for example. Also, the connection parts 821-824 may be formed collectively with the drain electrode 71, the source electrode 72, the gate electrode 73, and the source sense electrode 74 by the same plating process, for example.

[0037] The multiple connection parts 821 overlap the intermediate wiring layer 811 and the drain electrode 71 when viewed in the z direction, and are connected to the intermediate wiring layer 811 and the drain electrode 71. There is no limitation on the number or shape of the multiple connection parts 821. In the illustrated example, the multiple connection parts 821 are each cylindrical and are arranged in the x direction.

[0038] The multiple connection parts 822 overlap the intermediate wiring layer 812 and the source electrode 72 when viewed in the z direction, and are connected to the intermediate wiring layer 812 and the source electrode 72. There is no limitation on the number or shape of the multiple connection parts 822. In the illustrated example, the multiple connection parts 822 are each cylindrical and arranged in multiple rows along the y direction so as to overlap with the multiple internal electrodes 52.

[0039] The connection portion 823 overlaps the intermediate wiring layer 813 and the gate electrode 73 when viewed in the z direction, and is connected to the intermediate wiring layer 813 and the gate electrode 73. There are no limitations on the number or shape of the connection portion 823. In the illustrated example, the number of the connection portion 823 is one, and the connection portion 823 is cylindrical.

[0040] The connection portion 824 overlaps the intermediate wiring layer 814 and the source sense electrode 74 when viewed in the z direction, and is connected to the intermediate wiring layer 814 and the source sense electrode 74. There are no limitations on the number or shape of the connection portion 824. In the illustrated example, the number of the connection portion 824 is one, and the connection portion 824 is cylindrical.

[0041] The connection parts 831-834 each penetrate the second layer 62 in the z-direction. The material of the connection parts 831-834 is not limited in any way and may be made of a metal such as Cu, Ni, Au, or Al, and may be formed by plating, for example. Also, the connection parts 831-834 may be formed collectively with the intermediate wiring layers 811-814 by the same plating process, for example.

[0042] The multiple connection parts 831 overlap the intermediate wiring layer 811 and the multiple internal electrodes 51 when viewed in the z direction, and are connected to the intermediate wiring layer 811 and the multiple internal electrodes 51. There is no limitation on the number or shape of the multiple connection parts 831. In the illustrated example, the multiple connection parts 831 are each cylindrical and arranged in multiple rows along the y direction so as to overlap with the multiple internal electrodes 52.

[0043] The multiple connection parts 832 overlap the intermediate wiring layer 812 and the multiple internal electrodes 52 when viewed in the z direction, and are connected to the intermediate wiring layer 812 and the multiple internal electrodes 52. There is no limitation on the number or shape of the multiple connection parts 832. In the illustrated example, the multiple connection parts 832 are each cylindrical and arranged in multiple rows along the y direction so as to overlap with the multiple internal electrodes 52.

[0044] The connection portion 833 overlaps the intermediate wiring layer 813 and the internal electrode 53 when viewed in the z direction, and is connected to the intermediate wiring layer 813 and the internal electrode 53. There are no limitations on the number or shape of the connection portion 833. In the illustrated example, the number of the connection portion 833 is one, and the connection portion 833 is cylindrical.

[0045] The connection portion 834 overlaps with the intermediate wiring layer 814 and the internal electrode 52 located at the rightmost position in Fig. 13 when viewed in the z direction, and is connected to the intermediate wiring layer 814 and the internal electrode 52 located at the rightmost position in Fig. 13. The number and shape of the connection portion 834 are not limited in any way. In the illustrated example, the connection portion 834 is one in number and has a cylindrical shape.

[0046] [First Lead 1] The first lead 1 is a member that supports the switching device B1 and constitutes a conductive path to the switching device B1, and is formed, for example, by subjecting a metal plate material such as Cu or a Cu alloy to cutting and bending processes. A metal layer made of a metal such as Ag, Ni, Pd, or Au may be provided at an appropriate location on the first lead 1. This metal layer is formed, for example, by plating. As shown in FIGS. 1 to 6 and 9 to 11, the first lead 1 of this embodiment has a first main surface 11, a first back surface 12, a first intermediate surface 13, a first thick portion 14, and a first thin portion 15.

[0047] The first main surface 11 is a surface facing the switching device B1 in the z direction. The drain electrode 71 of the switching device B1 is joined to the first main surface 11 via a conductive bonding material 791. The conductive bonding material 791 is, for example, solder, Ag paste, sintered Ag, or the like. The first back surface 12 is a surface facing the opposite side to the first main surface 11 in the z direction. The first main surface 11 and the first back surface 12 are flat surfaces. As viewed in the z direction, the first back surface 12 is smaller than the first main surface 11. In addition, the first back surface 12 is located inward with respect to the outer edge of the resin part 9 as viewed in the z direction. The first intermediate surface 13 is located between the first main surface 11 and the first back surface 12 in the z direction, and faces the same side as the first back surface 12.

[0048] The first thick portion 14 is a portion that overlaps with the first main surface 11 and the first back surface 12 when viewed in the z direction. The shape of the first thick portion 14 is not limited in any way, and in the illustrated example, when viewed in the z direction, it includes a rectangular portion and a wide rectangular portion that is adjacent to the rectangular portion in the y direction and has a larger dimension in the x direction.

[0049] The first thin portion 15 is a portion that overlaps with the first main surface 11 and the first intermediate surface 13 when viewed in the z direction. The first thin portion 15 is a portion that is thinner than the first thick portion 14. In other words, the first thick portion 14 is a portion that is thicker than the first thin portion 15. The shape of the first thin portion 15 is not limited in any way, and in the illustrated example, it has an edge portion 151 and two extension portions 152.

[0050] Edge portion 151 has a portion extending from one end of first thick portion 14 in the y direction to one side in the y direction, and a portion extending from first thick portion 14 to both sides in the x direction. Edge portion 151 has two end faces 1511 and 1512. End face 1511 is an end face facing in the x direction. End face 1512 is an end face facing in the y direction. The two end faces 1511 and 1512 are connected to each other. The two end faces 1511 and 1512 are exposed from resin portion 9.

[0051] The two extending portions 152 extend to both sides in the x direction from near the end of the first thick portion 14 on the other side in the y direction. Each of the two extending portions 152 has an end face 1521. The end face 1521 is a solid end face in the x direction. The two end faces 1521 are exposed from the resin portion 9.

[0052] In the illustrated example, the drain electrode 71 is disposed at a position close to one end in the y direction of the first main surface 11. Also, the drain electrode 71 is located between the edge portion 151 and the two extension portions 152 in the y direction.

[0053] [Second Lead 2] The second lead 2 is a member that supports the switching device B1 and constitutes a conductive path to the switching device B1, and is formed, for example, by cutting and bending a metal plate material such as Cu or a Cu alloy. A metal layer made of a metal such as Ag, Ni, Pd, or Au may be provided at an appropriate location on the second lead 2. This metal layer is formed, for example, by plating. As shown in FIGS. 1 to 3 and 7 to 11, the second lead 2 of this embodiment has a second main surface 21, a second back surface 22, a second intermediate surface 23, a second thick portion 24, and a second thin portion 25. The second lead 2 is disposed on the other side of the first lead 1 in the y direction.

[0054] The second main surface 21 is a surface facing the switching device B1 in the z direction. The source electrode 72 of the switching device B1 is joined to the second main surface 21 via a conductive bonding material 792. The conductive bonding material 792 is, for example, solder, Ag paste, sintered Ag, or the like. The second back surface 22 is a surface facing the opposite side to the second main surface 21 in the z direction. The second main surface 21 and the second back surface 22 are flat surfaces. As viewed in the z direction, the second back surface 22 is smaller than the second main surface 21. In addition, the second back surface 22 is located inward with respect to the outer edge of the resin part 9 as viewed in the z direction. The second intermediate surface 23 is located between the second main surface 21 and the second back surface 22 in the z direction, and faces the same side as the second back surface 22.

[0055] The second thick portion 24 is a portion that overlaps with the second main surface 21 and the second back surface 22 when viewed in the z direction. The shape of the second thick portion 24 is not limited in any way, and in the illustrated example, it is rectangular when viewed in the z direction.

[0056] The second thin portion 25 is a portion that overlaps with the second main surface 21 and the second intermediate surface 23 when viewed in the z direction. The second thin portion 25 is a portion that is thinner than the second thick portion 24. In other words, the second thick portion 24 is a portion that is thicker than the second thin portion 25. The shape of the second thin portion 25 is not limited in any way, and in the illustrated example, it has an edge portion 251 and a cross portion 252.

[0057] The edge portion 251 is a portion that surrounds the second thick portion 24 when viewed in the z direction, and has a rectangular ring shape. The edge portion 251 has an end face 2511. The end face 2511 is an end face that faces the y direction. The end face 2511 is exposed from the resin portion 9.

[0058] The crossing portion 252 is a portion that is connected to one side in the y direction with respect to the edge portion 251. The crossing portion 252 has an elongated rectangular shape that extends long in the x direction. The crossing portion 252 has two end faces 2521. The two end faces 2521 are end faces that face the x direction. The two end faces 2521 are exposed from the resin portion 9.

[0059] In the illustrated example, when viewed in the z direction, the recess 721 of the source electrode 72 is disposed along the corner formed by the boundary between the edge portion 251 and the crossing portion 252. Moreover, when viewed in the z direction, the majority of the source electrode 72 overlaps with the second thin portion 25, and another part overlaps with the second thick portion 24.

[0060] [Third Lead 3] The third lead 3 is a member that supports the switching device B1 and constitutes a conductive path to the switching device B1, and is formed, for example, by cutting and bending a metal plate material such as Cu or a Cu alloy. A metal layer made of a metal such as Ag, Ni, Pd, or Au may be provided at an appropriate location of the third lead 3. This metal layer is formed, for example, by plating. As shown in FIGS. 1 to 3, 8, and 9, the third lead 3 of this embodiment has a third main surface 31, a third back surface 32, a third intermediate surface 33, a third thick portion 34, and a third thin portion 35. The third lead 3 is disposed on the other side of the crossing portion 252 of the second lead 2 in the y direction, and on one side of the edge portion 251 in the x direction.

[0061] The third main surface 31 is a surface facing the switching device B1 in the z direction. The gate electrode 73 of the switching device B1 is bonded to the third main surface 31 via a conductive bonding material 793. The conductive bonding material 793 is, for example, solder, Ag paste, sintered Ag, or the like. The third back surface 32 is a surface facing the opposite side to the third main surface 31 in the z direction. The third main surface 31 and the third back surface 32 are flat surfaces. As viewed in the z direction, the third back surface 32 is smaller than the third main surface 31. In addition, the third back surface 32 is located inward with respect to the outer edge of the resin part 9 as viewed in the z direction. The third intermediate surface 33 is located between the third main surface 31 and the third back surface 32 in the z direction, and faces the same side as the third back surface 32. In the illustrated example, both the third main surface 31 and the third back surface 32 are rectangular. In the illustrated example, the gate electrode 73 is disposed along a corner where the other end of the third major surface 31 in the x direction and the other end in the y direction are joined.

[0062] The third thick portion 34 is a portion that overlaps with the third main surface 31 and the third back surface 32 when viewed in the z direction. The shape of the third thick portion 34 is not limited in any way, and in the illustrated example, it is rectangular when viewed in the z direction.

[0063] The third thin portion 35 is a portion overlapping with the third main surface 31 and the third intermediate surface 33 when viewed in the z direction. The third thin portion 35 is a portion thinner than the third thick portion 34. That is, the third thick portion 34 is a portion thicker than the third thin portion 35. The shape of the third thin portion 35 is not limited in any way, and in the illustrated example, it is a rectangular ring shape surrounding the third thick portion 34 when viewed in the z direction. The third thin portion 35 has an end face 351. The end face 351 is an end face facing the y direction. The end face 351 is exposed from the resin portion 9.

[0064] [4th Lead 4] The fourth lead 4 is a member that supports the switching device B1 and constitutes a conductive path to the switching device B1, and is formed, for example, by cutting and bending a metal plate material such as Cu or a Cu alloy. A metal layer made of a metal such as Ag, Ni, Pd, or Au may be provided at an appropriate position of the fourth lead 4. This metal layer is formed, for example, by plating. As shown in FIGS. 1 to 3, 8, and 10, the fourth lead 4 of this embodiment has a fourth main surface 41, a fourth back surface 42, a fourth intermediate surface 43, a fourth thick portion 44, and a fourth thin portion 45. The fourth lead 4 is disposed on the other side in the y direction with respect to the crossing portion 252 of the second lead 2, and is disposed between the edge portion 251 and the third lead 3 in the x direction.

[0065] The fourth main surface 41 is a surface facing the switching device B1 in the z direction. The source sense electrode 74 of the switching device B1 is joined to the fourth main surface 41 via a conductive bonding material 794. The conductive bonding material 794 is, for example, solder, Ag paste, sintered Ag, or the like. The fourth back surface 42 is a surface facing the opposite side to the fourth main surface 41 in the z direction. The fourth main surface 41 and the fourth back surface 42 are flat surfaces. As viewed in the z direction, the fourth back surface 42 is smaller than the fourth main surface 41. In addition, the fourth back surface 42 is located inward with respect to the outer edge of the resin part 9 as viewed in the z direction. The fourth intermediate surface 43 is located between the fourth main surface 41 and the fourth back surface 42 in the z direction, and faces the same side as the fourth back surface 42. In the illustrated example, both the fourth main surface 41 and the fourth back surface 42 are rectangular. In the illustrated example, the source sense electrode 74 is disposed on the other side in the y direction with respect to the center of the fourth main surface 41.

[0066] The fourth thick portion 44 is a portion that overlaps with the fourth main surface 41 and the fourth back surface 42 when viewed in the z direction. The shape of the fourth thick portion 44 is not limited in any way, and in the illustrated example, it is rectangular when viewed in the z direction.

[0067] The fourth thin portion 45 is a portion that overlaps with the fourth main surface 41 and the fourth intermediate surface 43 when viewed in the z direction. The fourth thin portion 45 is a portion that is thinner than the fourth thick portion 44. That is, the fourth thick portion 44 is a portion that is thicker than the fourth thin portion 45. The shape of the fourth thin portion 45 is not limited in any way, and in the illustrated example, it extends from the third thick portion 34 to both sides in the y direction when viewed in the z direction. The fourth thin portion 45 has an end face 451. The end face 451 is an end face that faces the y direction. The end face 451 is exposed from the resin portion 9.

[0068] 3, in this embodiment, the dimension y11 of the edge portion 151 in the y direction is larger than the dimension y12 of the extension portion 152 in the y direction. Furthermore, the dimension y13, which is the distance in the y direction between the edge portion 151 and the extension portion 152, is larger than both the dimension y11 and the dimension y12. The dimension y2 of the crossing portion 252 in the y direction is larger than both the dimension y11 and the dimension y12. The dimension g1, which is the distance in the y direction between the first lead 1 and the second lead 2, is smaller than all of the dimension y11, the dimension y12, and the dimension y2.

[0069] [Resin part 9] The resin portion 9 covers a portion of each of the first lead 1, the second lead 2, the third lead 3, and the fourth lead 4, and the switching device B1. The resin portion 9 includes an insulating resin. In this embodiment, the resin portion 9 includes a material having a lower water permeability than the sealing material 6 of the switching device B1. An example of the material of the resin portion 9 is a black epoxy resin containing a filler. As shown in FIGS. 1 to 11, the resin portion 9 of this embodiment has a first resin surface 91, a second resin surface 92, two third resin surfaces 93, and two fourth resin surfaces 94.

[0070] The first resin surface 91 faces the same side as the first device surface 6a of the switching device B1 in the z direction. The first resin surface 91 is a flat surface. In this embodiment, the first back surface 12, the second back surface 22, the third back surface 32, and the fourth back surface 42 are exposed from the first resin surface 91. The first resin surface 91, the first back surface 12, the second back surface 22, the third back surface 32, and the fourth back surface 42 are flush with each other. However, when a metal layer formed by plating or the like is provided on the first back surface 12, the second back surface 22, the third back surface 32, and the fourth back surface 42, the metal layer may slightly protrude from the first resin surface 91.

[0071] The second resin surface 92 is a surface facing in the z direction opposite to the first resin surface 91. The second resin surface 92 has a rectangular shape when viewed in the z direction, and is, for example, a flat surface.

[0072] The two third resin surfaces 93 are surfaces facing both sides in the x direction. The third resin surfaces 93 may be flat surfaces or curved surfaces with a portion near the center in the z direction slightly protruding outward in the x direction. In this embodiment, end surfaces 1511, 1521, and 2521 are exposed from the third resin surfaces 93. The third resin surfaces 93 and the end surfaces 1511, 1521, and 2521 from the third resin surfaces 93 are flush with each other.

[0073] The two fourth resin surfaces 94 are surfaces facing both sides in the y direction. The fourth resin surfaces 94 may be flat surfaces or curved surfaces with a portion near the center in the z direction slightly protruding outward in the y direction. In this embodiment, an end surface 1512 is exposed from one of the fourth resin surfaces 94. The fourth resin surface 94 and the end surface 1512 are flush with each other. In addition, an end surface 2511, an end surface 351, and an end surface 451 are exposed from the other fourth resin surface 94. The fourth resin surface 94, the end surface 2511, the end surface 351, and the end surface 451 are flush with each other.

[0074] 3, in this embodiment, the center O1 of the semiconductor device A1 (which coincides with the center of the resin part 9) and the center O2 of the switching device B1 are separated from each other when viewed in the z direction. The center O2 is located on the other side in the x direction with respect to the center O1. The center O2 is located on one side in the y direction with respect to the center O1. The distance dx in the x direction between the centers O1 and O2 is greater than, for example, the dimension of the fourth lead 4 in the x direction. The distance dy in the y direction between the centers O1 and O2 is greater than, for example, the dimension y12 or the dimension g1. Next, the operation of the semiconductor device A1 will be described.

[0075] According to this embodiment, in the switching device B1, the drain electrode 71, the source electrode 72, and the gate electrode 73 are arranged on the first device surface 6a. The drain electrode 71, the source electrode 72, and the gate electrode 73 are conductively joined to the first lead 1, the second lead 2, and the third lead 3 by conductive bonding materials 791, 792, and 793. Therefore, it is not necessary to provide other leads or the like on the side where the second device surface 6b faces the sealing material 6. In addition, it is not necessary to connect wires or the like to the drain electrode 71, the source electrode 72, and the gate electrode 73. Therefore, it is possible to reduce the thickness of the semiconductor device A1.

[0076] The switching device B1 includes a semiconductor element 5, and the semiconductor element 5 includes a GaN-HEMT. This allows the switching device B1 (semiconductor device A1) to be driven at a high frequency. Also, compared to a configuration including a switching device including Si, a higher output can be achieved.

[0077] The switching device B1 further includes a source sense electrode 74 disposed on the first device surface 6a. The source sense electrode 74 is conductively joined to the fourth lead 4 by a conductive bonding material 794. This allows the semiconductor device A1 to be more precisely controlled without hindering the semiconductor device A1 from being made thinner.

[0078] As shown in FIG. 2, the second back surface 22, the third back surface 32, and the fourth back surface 42 are arranged side by side in the x direction. The first main surface 11 is arranged apart from the second back surface 22, the third back surface 32, and the fourth back surface 42 in the y direction. This makes it possible to suppress unintended rotation, misalignment, and the like of the semiconductor device A1 when mounting the semiconductor device A1 on a circuit board (not shown) by soldering or the like. The fourth back surface 42 is arranged between the second back surface 22 and the third back surface 32 in the x direction, and has a smaller dimension in the x direction than the second back surface 22 and the third back surface 32. This makes it possible to suppress an increase in the dimension in the x direction of the semiconductor device A1 while configuring the semiconductor device A1 to have the fourth back surface 42 that is conductive to the source sense electrode 74.

[0079] The first thin portion 15 of the first lead 1 has an edge portion 151 and two extending portions 152. This can prevent the first lead 1 from falling off the sealing material 6. Furthermore, by having two extending portions 152, the mounting operation can be performed more stably when mounting the switching device B1 on the first lead 1 during the manufacture of the semiconductor device A1.

[0080] A large portion of the source electrode 72 of the switching device B1 is joined to the crossing portion 252 of the second lead 2. The crossing portion 252 is a portion that is distant from the second back surface 22, and is therefore difficult to support from below when mounting the switching device B1. However, the crossing portion 252 of this embodiment crosses the second lead 2 in the x direction. Therefore, both ends of the crossing portion 252 can be supported from outside the area that will become the semiconductor device A1, and the mounting operation can be performed more stably.

[0081] A part of the source electrode 72 overlaps with the second back surface 22 (the second thick portion 24) when viewed in the z direction. This is preferable for stably mounting the switching device B1.

[0082] The dimension g1, which is the gap between the first lead 1 and the second lead 2, is smaller than the dimensions y11, y12, and y2. This makes it possible to reduce the distance between the first lead 1 and the second lead 2, which is preferable for miniaturizing the semiconductor device A1.

[0083] The resin portion 9 contains a material having a lower water permeability than the sealing material 6 of the switching device B1. This makes it possible to suppress moisture from penetrating from the outside of the semiconductor device A1, and more reliably protect the semiconductor element 5 of the switching device B1.

[0084] 18 and 19 show another embodiment of the present disclosure. In these figures, elements that are the same as or similar to those in the above embodiment are denoted by the same reference numerals as those in the above embodiment.

[0085] [Switching device B2] 18 and 19 show a switching device used in a semiconductor device according to a second embodiment of the present disclosure. The overall shape and size of the switching device B2 of this embodiment, as well as the shapes, sizes and arrangements of the drain electrode 71, the source electrode 72, the gate electrode 73 and the source sense electrode 74, are similar to those of the switching device B1.

[0086] The semiconductor element 5 of the switching device B2 overlaps with the drain electrode 71, the source electrode 72, the gate electrode 73, and the source sense electrode 74 when viewed in the z direction. That is, the dimension of the semiconductor element 5 of the switching device B2 in the y direction is larger than that of the semiconductor element 5 of the switching device B1. Also, the drain electrode 71 overlaps with a plurality of internal electrodes 51 when viewed in the z direction.

[0087] The drain electrode 71 is connected to the multiple internal electrodes 51 via multiple connection portions 821. The source electrode 72 is connected to the multiple internal electrodes 52 via multiple connection portions 822. The source electrode 72 is connected to the internal electrode 53 via a connection portion 823. The source sense electrode 74 is connected to one internal electrode 52 via a connection portion 824. In this manner, the switching device B2 does not have the intermediate wiring layers 811-814 and the connection portions 831-834 in the switching device B1.

[0088] In this embodiment, 6 may be a laminate of multiple plate materials like the sealing material 6 of the switching device B1, or may be an integrally formed structure. In this embodiment, too, the material constituting the resin portion 9 has a lower water permeability than the material constituting the sealing material 6.

[0089] In the present embodiment, the ratio of the outer dimensions of the encapsulant 6 to the outer dimensions of the switching device B2 is greater than that of the switching device B1. Therefore, the ratio of the volume of the semiconductor element 5 to the entire volume of the switching device B2 is high, and the ratio of the volume of the encapsulant 6 to the entire volume of the switching device B2 is low.

[0090] This embodiment also allows the semiconductor device to be thinned, and provides the same effect as the semiconductor device A1. As can be seen from this embodiment, the specific configuration of the switching device of the present disclosure can be appropriately adopted from various configurations including the switching devices B1 and B2. For example, a semiconductor element 5 that does not include the sealing material 6, the intermediate wiring layers 811 to 814, and the connecting portions 821 to 834 may be adopted as the switching device of the present disclosure. In this case, the drain electrode 71 is formed by the internal electrode 51, the source electrode 72 is formed by one of the multiple internal electrodes 52, the gate electrode 73 is formed by the internal electrode 53, and the source sense electrode 74 is formed by one of the multiple internal electrodes 52.

[0091] The semiconductor device according to the present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the semiconductor device according to the present disclosure can be freely designed in various ways. [Appendix 1] a switching device having a first device surface and a second device surface facing opposite each other in a thickness direction, and a drain electrode, a source electrode, and a gate electrode disposed on the first device surface; a first lead conductively connected to the drain electrode; A second lead conductively connected to the source electrode; a third lead conductively connected to the gate electrode; a resin portion covering the switching device and a portion of each of the first to third leads, the resin portion having a first resin surface facing the same side as the first device surface and a second resin surface facing the same side as the second device surface, the first to third leads are exposed from the first resin surface. [Appendix 2] 2. The semiconductor device according to claim 1, wherein the switching device includes a GaN-HEMT (High Electron Mobility Transistor). [Appendix 3] the switching device has a source sense electrode disposed on the first device surface; A fourth lead is electrically connected to the source sense electrode. 2. The semiconductor device according to claim 1, wherein the fourth lead is exposed from the first resin surface. [Appendix 4] 4. The semiconductor device according to claim 3, wherein, when viewed in the thickness direction, each of the first to fourth leads overlaps the resin portion. [Appendix 5] the first lead has a first main surface facing the switching device in the thickness direction and a first back surface facing the opposite side to the first main surface; the first back surface is exposed from the first resin surface, the second lead has a second main surface facing the switching device in the thickness direction and a second back surface facing the opposite side to the second main surface; the second back surface is exposed from the first resin surface, the third lead has a third main surface facing the switching device in the thickness direction and a third back surface facing the opposite side to the third main surface, the third back surface is exposed from the first resin surface, the fourth lead has a fourth main surface facing the switching device in the thickness direction and a fourth back surface facing a side opposite to the fourth main surface, 5. The semiconductor device according to claim 4, wherein the fourth back surface is exposed from the first resin surface. [Appendix 6] 6. The semiconductor device according to claim 5, wherein the first lead and the second lead are arranged apart from each other in a first direction perpendicular to the thickness direction. [Appendix 7] a dimension of the drain electrode in the first direction is smaller than a dimension of the source electrode in the first direction; 7. The semiconductor device according to claim 6, wherein a dimension of the first main surface in the first direction is larger than a dimension of the second main surface in the first direction. [Appendix 8] the first lead has a first intermediate surface located between the first main surface and the first back surface in the thickness direction; 8. The semiconductor device of claim 7, wherein the first lead includes a first thick portion overlapping the first main surface and the first back surface when viewed in the thickness direction, and a first thin portion overlapping the first main surface and the first intermediate surface. [Appendix 9] 9. The semiconductor device according to claim 8, wherein the drain electrode overlaps with the first thick portion when viewed in the thickness direction. [Appendix 10] The semiconductor device described in Appendix 9, wherein the first thin portion includes an extension portion extending from the first thick portion in the thickness direction and a second direction perpendicular to the first direction, and an edge portion located on the opposite side of the extension portion to the second lead in the first direction. [Appendix 11] 11. The semiconductor device according to claim 10, wherein a dimension of the extension portion in the first direction is smaller than a dimension of the edge portion in the first direction. [Appendix 12] 12. The semiconductor device according to claim 11, wherein a distance between the first lead and the second lead in the first direction is smaller than a dimension of the extending portion of the first thin portion in the first direction. [Appendix 13] the second lead has a second intermediate surface located between the second main surface and the second back surface in the thickness direction; 13. The semiconductor device according to any one of appendixes 10 to 12, wherein the second lead includes a second thick portion overlapping the second main surface and the second back surface when viewed in the thickness direction, and a second thin portion overlapping the second main surface and the second intermediate surface. [Appendix 14] The second thin-walled portion reaches both ends of the resin portion in the second direction and the first and a cross-sectional portion located on the first lead side of the second thick portion in a direction of the lead edge, and an edge portion extending from the second thick portion. [Appendix 15] 15. The semiconductor device of claim 14, wherein the source electrode overlaps the crossing portion when viewed in the thickness direction. [Appendix 16] 16. The semiconductor device of claim 15, wherein a dimension of the crossing portion in the first direction is greater than a dimension of the extending portion of the first thin portion of the first lead in the first direction. [Appendix 17] 17. The semiconductor device according to any one of claims 13 to 16, wherein the second back surface, the third back surface, and the fourth back surface are arranged side by side in the second direction. [Explanation of symbols]

[0092] A1: Semiconductor device B1, B2: Switching devices 1: First lead 2: 2nd lead 3: Third lead 4: 4th lead 5: Semiconductor elements 6: Encapsulating material 6a: First device surface 6b: Second device surface 9: Resin part 11: First main surface 12: First back side 13: First intermediate surface 14: 1st thick part 15: 1st thin section 21: Second main surface 22: Second back side 23: Second intermediate surface 24: 2nd thick part 25: 2nd thin section 31: Third main surface 32: Third back 33: 3rd intermediate surface 34: 3rd thick part 35: 3rd thin section 41: Fourth main surface 42: 4th back 43: 4th intermediate surface 44: 4th thick part 45: 4th thin section 51,52,53: Internal electrode 61: 1st layer 62: 2nd layer 63:Third layer 64: 4th layer 71: Drain electrode 72: Source electrode 73: Gate electrode 74: Source sense electrode 91: 1st resin surface 92: 2nd resin surface 93: 3rd resin surface 94: 4th resin surface 151: Edge 152: Extension part 251: Edge 252: Crossing section 351,451: End face 721: Recess 791,792,793,794: Conductive bonding material 811, 812, 813, 814: Intermediate wiring layers 821,822,823,824,825,826,827,828,829,830,831,832,833,834,1511: End surface 1512,1521,2511,2521: End face O1,O2:center dx,dy: distance g1, y11, y12, y13, y2: dimensions

Claims

1. a switching device having a first device surface and a second device surface facing opposite each other in a thickness direction, and a drain electrode, a source electrode, and a gate electrode disposed on the first device surface; a first lead conductively connected to the drain electrode; A second lead conductively connected to the source electrode; a third lead conductively connected to the gate electrode; a resin portion covering the switching device and a portion of each of the first to third leads, the resin portion having a first resin surface facing the same side as the first device surface and a second resin surface facing the same side as the second device surface, the first to third leads are exposed from the first resin surface, the switching device having a source sense electrode disposed on the first device surface; a fourth lead conductively connected to the source sense electrode; the fourth lead is exposed from the first resin surface, When viewed in the thickness direction, each of the first to fourth leads overlaps the resin portion, the first lead has a first main surface facing the switching device in the thickness direction and a first back surface facing a side opposite to the first main surface; the first back surface is exposed from the first resin surface, the second lead has a second main surface facing the switching device in the thickness direction and a second back surface facing the opposite side to the second main surface; the second back surface is exposed from the first resin surface, the third lead has a third main surface facing the switching device in the thickness direction and a third back surface facing the opposite side to the third main surface; the third back surface is exposed from the first resin surface, the fourth lead has a fourth main surface facing the switching device in the thickness direction and a fourth back surface facing a side opposite to the fourth main surface, the fourth back surface is exposed from the first resin surface, the first lead and the second lead are disposed apart from each other in a first direction perpendicular to the thickness direction, a dimension of the drain electrode in the first direction is smaller than a dimension of the source electrode in the first direction; A semiconductor device, wherein the dimension of the first main surface in the first direction is larger than the dimension of the second main surface in the first direction.

2. 2. The semiconductor device according to claim 1, wherein the switching device includes a GaN-HEMT.

3. the first lead has a first intermediate surface located between the first main surface and the first back surface in the thickness direction; 2. The semiconductor device according to claim 1, wherein the first lead includes a first thick portion overlapping the first main surface and the first back surface when viewed in the thickness direction, and a first thin portion overlapping the first main surface and the first intermediate surface.

4. The semiconductor device according to claim 3 , wherein the drain electrode overlaps with the first thick portion when viewed in the thickness direction.

5. 5. The semiconductor device of claim 4, wherein the first thin portion includes an extension portion extending from the first thick portion in the thickness direction and in a second direction perpendicular to the first direction, and an edge portion located on the opposite side of the extension portion to the second lead in the first direction.

6. The semiconductor device according to claim 5 , wherein a dimension of said extension in said first direction is smaller than a dimension of said edge in said first direction.

7. 7. The semiconductor device according to claim 6, wherein a distance between said first lead and said second lead in said first direction is smaller than a dimension of said extending portion of said first thin portion in said first direction.

8. the second lead has a second intermediate surface located between the second main surface and the second back surface in the thickness direction; 8. The semiconductor device according to claim 5, wherein the second lead includes a second thick portion overlapping the second main surface and the second back surface when viewed in the thickness direction, and a second thin portion overlapping the second main surface and the second intermediate surface.

9. The second thin portion reaches both ends of the resin portion in the second direction and the first 9. The semiconductor device according to claim 8, further comprising: a traversing portion located on said first lead side with respect to said second thick portion in a direction; and an edge portion extending from said second thick portion.

10. The semiconductor device according to claim 9 , wherein the source electrode overlaps the transverse portion when viewed in the thickness direction.

11. The semiconductor device according to claim 10 , wherein a dimension of the traversing portion in the first direction is larger than a dimension of the extending portion of the first thin portion of the first lead in the first direction.

12. 12. The semiconductor device according to claim 8, wherein the second back surface, the third back surface, and the fourth back surface are arranged side by side in the second direction.

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