Solid-state imaging element, solid-state imaging device, and readout method for solid-state imaging element

Abstract

To provide a solid-state image capturing element capable of avoiding an increase in manufacturing cost as well as degradation of characteristics.SOLUTION: Provided is a solid-state image capturing element including: a first photoelectric conversion part provided above a semiconductor substrate and configured to convert light into electric charge; and a second photoelectric conversion part provided above the first photoelectric conversion part and configured to convert light into electric charge. The first and the second photoelectric conversion parts each have a laminated structure including an upper electrode, a lower electrode, a photoelectric conversion film sandwiched between the upper electrode and the lower electrode, and an accumulation electrode facing the upper electrode through the photoelectric conversion film and an insulating film. The lower electrode of each of the first and the second photoelectric conversion parts is electrically connected with a common electric charge accumulation part through a common penetration electrode provided in common to the first and the second photoelectric conversion parts and penetrating through the semiconductor substrate, the common electric charge accumulation part being provided in the semiconductor substrate in common to the first and the second photoelectric conversion parts.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present disclosure relates to a solid-state imaging element, a solid-state imaging device, and a readout method for a solid-state imaging element. [Background technology]

[0002] In recent years, in CCD (Charge Coupled Device) image sensors and CMOS (Complementary Metal-Oxide-Semiconductor) image sensors (solid-state imaging devices), three photoelectric conversion films capable of performing photoelectric conversion with red light, green light, and blue light, respectively, are vertically stacked in each unit pixel (solid-state imaging element), and an image sensor capable of detecting three colors of light with one unit pixel has been proposed (for example, Patent Documents 1 and 5 below). In addition, other image sensors capable of detecting three colors of light with one unit pixel include the following. For example, as disclosed in Patent Document 2 below, there can be mentioned an image sensor having a semiconductor substrate on which two photodiodes (PD) (photoelectric conversion elements) that detect red light and blue light, respectively, are stacked, and a photoelectric conversion film that is provided above the semiconductor substrate and is capable of performing photoelectric conversion with green light.

[0003] Furthermore, in an image sensor having a semiconductor substrate on which two PDs are stacked and a photoelectric conversion film provided above the semiconductor substrate, the following circuit configurations for extracting pixel signals can be mentioned: For example, as disclosed in the following Patent Document 3, a back-illuminated structure can be mentioned in which a circuit formation layer on which the above-mentioned circuits are formed is formed on the side opposite to the light receiving surface of the image sensor.

[0004] Another example of an image sensor is the image sensor disclosed in Patent Document 4. Patent Document 4 discloses a structure in which a semiconductor layer for storing and transferring charges obtained by photoelectric conversion and a storage electrode facing the semiconductor layer via an insulating film are provided directly below a photoelectric conversion film provided above a semiconductor substrate. In this structure, charges generated by photoelectric conversion by the photoelectric conversion film can be efficiently stored in the photoelectric conversion film like a type of capacitor. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2005-51115 A [Patent Document 2] JP 2003-332551 A [Patent Document 3] JP 2011-29337 A [Patent Document 4] JP 2017-157816 A [Patent Document 5] International Publication No. 2016 / 002576 Summary of the Invention [Problem to be solved by the invention]

[0006] When a plurality of PDs are provided in a unit pixel (solid-state imaging element) as described above, a charge storage section (floating diffusion section) is provided for each PD in the semiconductor substrate in order to extract the charge generated by the photoelectric conversion for each PD. Furthermore, in order to transfer the charge generated by the photoelectric conversion for each PD to each charge storage section, a through electrode, wiring, etc. penetrating the semiconductor substrate is provided for each PD. In such a stacked structure, due to an increase in the processing area of ​​the semiconductor substrate caused by the formation of the through electrode, for example, the incident surface of the PD provided in the semiconductor substrate through which light is incident is reduced. As a result, the amount of light incident on the PD is reduced, and the sensitivity characteristics of the PD are reduced. On the other hand, if it is attempted to avoid the reduction in the incident surface of the PD, the area of ​​the chip on which the image sensor (solid-state imaging device) is mounted increases, making it difficult to avoid an increase in the manufacturing cost of the solid-state imaging device.

[0007] In addition, in the above-mentioned stacked structure, since a through electrode that penetrates the semiconductor substrate is formed for each PD, the crystallinity of the semiconductor substrate decreases, making it difficult to avoid deterioration of the dark current characteristics of the image sensor.

[0008] In view of the above circumstances, the present disclosure proposes a new and improved solid-state imaging element, a solid-state imaging device, and a readout method for a solid-state imaging element, which can avoid an increase in manufacturing costs while also avoiding deterioration of characteristics. [Means for solving the problem]

[0009] According to the present disclosure, there is provided a solid-state imaging device comprising a semiconductor substrate, a first photoelectric conversion unit provided above the semiconductor substrate and configured to convert light into an electric charge, and a second photoelectric conversion unit provided above the first photoelectric conversion unit and configured to convert light into an electric charge, wherein each of the first and second photoelectric conversion units has a layered structure including an upper electrode, a lower electrode, a photoelectric conversion film sandwiched between the upper electrode and the lower electrode, the upper electrode, and a storage electrode opposed to the photoelectric conversion film and an insulating film therebetween, and each of the lower electrodes of the first and second photoelectric conversion units is electrically connected to a common charge storage unit provided in common to the first and second photoelectric conversion units within the semiconductor substrate via a common through electrode that penetrates the semiconductor substrate and is provided in common to the first and second photoelectric conversion units.

[0010] According to the present disclosure, there is also provided a solid-state imaging device having a plurality of solid-state imaging elements arranged in a matrix, each of the solid-state imaging elements having a semiconductor substrate, a first photoelectric conversion unit provided above the semiconductor substrate and converting light into an electric charge, and a second photoelectric conversion unit provided above the first photoelectric conversion unit and converting light into an electric charge, each of the first and second photoelectric conversion units having a layered structure including an upper electrode, a lower electrode, a photoelectric conversion film sandwiched between the upper electrode and the lower electrode, the upper electrode, and a storage electrode opposed to the photoelectric conversion film and an insulating film, each of the lower electrodes of the first and second photoelectric conversion units being electrically connected to a common charge storage unit provided in common to the first and second photoelectric conversion units within the semiconductor substrate via a common through electrode that penetrates the semiconductor substrate and is provided in common to the first and second photoelectric conversion units.

[0011] Further, according to the present disclosure, there is provided a method for reading out a solid-state imaging element, the solid-state imaging element including a semiconductor substrate, a first photoelectric conversion unit provided above the semiconductor substrate and configured to convert light into electric charges, and a second photoelectric conversion unit provided above the first photoelectric conversion unit and configured to convert light into electric charges, each of the first and second photoelectric conversion units having a stacked structure including an upper electrode, a lower electrode, a photoelectric conversion film sandwiched between the upper electrode and the lower electrode, the upper electrode, and a storage electrode opposed to the photoelectric conversion film and an insulating film interposed therebetween, each of the lower electrodes of the first and second photoelectric conversion units being commonly provided to the first and second photoelectric conversion units, a common through electrode penetrating the semiconductor substrate, the common through electrode being electrically connected to a common charge accumulation section provided in common to the first and second photoelectric conversion sections within the semiconductor substrate, the storage electrodes of the first and second photoelectric conversion sections being respectively controlled to sequentially transfer charges accumulated in the photoelectric conversion films of the first and second photoelectric conversion sections to the lower electrodes of the first and second photoelectric conversion sections with a time difference, and the charges sequentially transferred to the lower electrodes of the first and second photoelectric conversion sections being sequentially stored in the common charge accumulation section and sequentially read out. Effect of the Invention

[0012] As described above, according to the present disclosure, it is possible to provide a solid-state imaging element, a solid-state imaging device, and a readout method for a solid-state imaging element, which can avoid an increase in manufacturing costs and deterioration of characteristics.

[0013] It should be noted that the above effects are not necessarily limiting, and any of the effects shown in this specification, or other effects that can be understood from this specification, may be achieved in addition to or instead of the above effects. [Brief description of the drawings]

[0014] [Figure 1] 1 is an explanatory diagram showing an example of a planar configuration of a solid-state imaging device 1 according to a first embodiment of the present disclosure. [Diagram 2]1 is a cross-sectional view of a pixel array section 10 according to a first embodiment of the present disclosure. [Diagram 3] 1 is an explanatory diagram showing a portion of a cross-sectional view of a solid-state imaging element 100 according to a first embodiment of the present disclosure. [Figure 4] 4 is a cross-sectional view of the solid-state imaging device 100 taken along the line AA' in FIG. [Diagram 5] 4 is a cross-sectional view of the solid-state imaging device 100 taken along line BB' in FIG. [Figure 6] 2 is an equivalent circuit diagram of PDs 500 and 600 of the solid-state imaging device 100 according to the first embodiment of the present disclosure. [Figure 7] 2 is an equivalent circuit diagram of a PD 400 included in the solid-state imaging device 100 according to the first embodiment of the present disclosure. [Figure 8] 2 is an explanatory diagram for explaining a readout method of the solid-state imaging element 100 according to the first embodiment of the present disclosure. FIG. [Figure 9] 11 is a cross-sectional view of a pixel array section 10a according to a second embodiment of the present disclosure. [Figure 10] FIG. 11 is a cross-sectional view of a pixel array unit 10b according to a third embodiment of the present disclosure. [Figure 11] 13 is a cross-sectional view of a pixel array section 10c and a peripheral section 50 according to a fourth embodiment of the present disclosure. [Figure 12] FIG. 13 is an explanatory diagram illustrating an example of an electronic device 900 according to a fifth embodiment of the present disclosure. [Figure 13] 11 is a cross-sectional view of a pixel array section 80 according to a comparative example. [Figure 14] FIG. 13 is a cross-sectional view of a pixel array unit 10d according to a sixth embodiment of the present disclosure. [Figure 15] 23 is a cross-sectional view of a pixel array section 10e according to a first modified example of the sixth embodiment of the present disclosure. FIG. [Figure 16] 23 is a cross-sectional view of a pixel array section 10f according to a second modified example of the sixth embodiment of the present disclosure. FIG. [Figure 17] 13 is a cross-sectional view of a main part of a pixel array section 10g according to a seventh embodiment of the present disclosure. FIG. [Figure 18]18 is a cross-sectional view of the solid-state imaging device 100 taken along line CC' in FIG. 17 in a two-pixel sharing configuration. [Figure 19] 18 is a cross-sectional view of the solid-state imaging device 100 taken along line DD' in FIG. 17 in a two-pixel sharing configuration. [Figure 20] 18 is a cross-sectional perspective view of the solid-state imaging device 100 taken along line CC' in FIG. 17 in a four-pixel sharing configuration. [Figure 21] 18 is a cross-sectional perspective view of the solid-state imaging device 100 taken along line DD' in FIG. 17 in a four-pixel sharing configuration. [Figure 22] FIG. 13 is a cross-sectional view (part 1) for explaining a manufacturing method of the solid-state imaging element 100 according to the seventh embodiment of the present disclosure. [Figure 23] FIG. 13 is a second cross-sectional view for explaining a manufacturing method of the solid-state imaging element 100 according to the seventh embodiment of the present disclosure. [Figure 24] FIG. 13 is a third cross-sectional view for explaining a manufacturing method of the solid-state imaging element 100 according to the seventh embodiment of the present disclosure. [Diagram 25] FIG. 13 is a fourth cross-sectional view for explaining a manufacturing method of the solid-state imaging element 100 according to the seventh embodiment of the present disclosure. [Figure 26] FIG. 13 is a fifth cross-sectional view for explaining a manufacturing method of the solid-state imaging element 100 according to the seventh embodiment of the present disclosure. [Figure 27] FIG. 13 is a sixth cross-sectional view illustrating a manufacturing method for the solid-state imaging device 100 according to the seventh embodiment of the present disclosure. [Figure 28] FIG. 13 is a seventh cross-sectional view illustrating a manufacturing method for the solid-state imaging device 100 according to the seventh embodiment of the present disclosure. [Figure 29] 13 is a cross-sectional view of a main part of a pixel array section 10g according to a first modified example of the seventh embodiment of the present disclosure. FIG. [Diagram 30] FIG. 13 is a cross-sectional view (part 1) for explaining a manufacturing method of the solid-state imaging device 100 according to Modification 1 of the seventh embodiment of the present disclosure. [Diagram 31]FIG. 23 is a cross-sectional view (part 2) for explaining a manufacturing method of the solid-state imaging device 100 according to the first modified example of the seventh embodiment of the present disclosure. [Diagram 32] FIG. 13 is a third cross-sectional view for explaining a manufacturing method of the solid-state imaging device 100 according to the first modified example of the seventh embodiment of the present disclosure. [Diagram 33] FIG. 13 is a fourth cross-sectional view for explaining a manufacturing method of the solid-state imaging device 100 according to the first modified example of the seventh embodiment of the present disclosure. [Diagram 34] FIG. 13 is a fifth cross-sectional view for explaining a manufacturing method of the solid-state imaging device 100 according to the first modified example of the seventh embodiment of the present disclosure. [Diagram 35] FIG. 13 is a sixth cross-sectional view illustrating a manufacturing method of the solid-state imaging device 100 according to the first modified example of the seventh embodiment of the present disclosure. [Diagram 36] FIG. 13 is a seventh cross-sectional view for explaining a manufacturing method of the solid-state imaging device 100 according to the first modified example of the seventh embodiment of the present disclosure. [Figure 37] 13 is a cross-sectional view of a main part of a pixel array section 10g according to a second modified example of the seventh embodiment of the present disclosure. FIG. [Figure 38] FIG. 13 is a cross-sectional view (part 1) for explaining a manufacturing method of the solid-state imaging device 100 according to Modification 2 of the seventh embodiment of the present disclosure. [Figure 39] FIG. 23 is a second cross-sectional view for explaining a manufacturing method of the solid-state imaging device 100 according to the second modification of the seventh embodiment of the present disclosure. [Diagram 40] FIG. 13 is a third cross-sectional view for explaining a manufacturing method of the solid-state imaging device 100 according to the second modification of the seventh embodiment of the present disclosure. [Diagram 41] FIG. 13 is a fourth cross-sectional view for explaining a manufacturing method of the solid-state imaging device 100 according to the second modification of the seventh embodiment of the present disclosure. [Diagram 42] 13 is a cross-sectional view of a main part of a pixel array section 10g according to a third modified example of the seventh embodiment of the present disclosure. FIG. [Diagram 43] FIG. 13 is a cross-sectional view (part 1) for explaining a manufacturing method of the solid-state imaging device 100 according to the third modification of the seventh embodiment of the present disclosure. [Diagram 44]FIG. 23 is a second cross-sectional view for explaining a manufacturing method of the solid-state imaging device 100 according to the third modified example of the seventh embodiment of the present disclosure. [Diagram 45] FIG. 13 is a third cross-sectional view for explaining a manufacturing method of the solid-state imaging device 100 according to the third modified example of the seventh embodiment of the present disclosure. [Diagram 46] FIG. 13 is a fourth cross-sectional view for explaining a manufacturing method of the solid-state imaging device 100 according to the third modified example of the seventh embodiment of the present disclosure. [Figure 47] FIG. 13 is a fifth cross-sectional view for explaining a manufacturing method of the solid-state imaging device 100 according to the third modified example of the seventh embodiment of the present disclosure. [Figure 48] FIG. 13 is a sixth cross-sectional view illustrating a manufacturing method of the solid-state imaging device 100 according to the third modification of the seventh embodiment of the present disclosure. [Figure 49] FIG. 13 is a seventh cross-sectional view illustrating a manufacturing method of the solid-state imaging device 100 according to the third modified example of the seventh embodiment of the present disclosure. [Figure 50] 13 is a cross-sectional view of a main part of a pixel array section 10g according to a fourth modified example of the seventh embodiment of the present disclosure. FIG. [Figure 51] FIG. 13 is a cross-sectional view (part 1) for explaining a manufacturing method of the solid-state imaging device 100 according to the fourth modified example of the seventh embodiment of the present disclosure. [Figure 52] FIG. 23 is a second cross-sectional view for explaining a manufacturing method of the solid-state imaging device 100 according to the fourth modified example of the seventh embodiment of the present disclosure. [Figure 53] FIG. 13 is a third cross-sectional view for explaining a manufacturing method of the solid-state imaging device 100 according to the fourth modified example of the seventh embodiment of the present disclosure. [Figure 54] FIG. 13 is a fourth cross-sectional view for explaining a manufacturing method of the solid-state imaging device 100 according to the fourth modified example of the seventh embodiment of the present disclosure. [Figure 55] FIG. 13 is a fifth cross-sectional view for explaining a manufacturing method of the solid-state imaging device 100 according to the fourth modified example of the seventh embodiment of the present disclosure. [Figure 56] FIG. 13 is a sixth cross-sectional view illustrating a manufacturing method of the solid-state imaging device 100 according to the fourth modified example of the seventh embodiment of the present disclosure. [Figure 57] 13 is a cross-sectional view of a main part of a pixel array section 10g according to a fifth modified example of the seventh embodiment of the present disclosure. FIG. [Figure 58] FIG. 13 is a cross-sectional view (part 1) for explaining a manufacturing method of the solid-state imaging device 100 according to the fifth modified example of the seventh embodiment of the present disclosure. [Figure 59] FIG. 23 is a cross-sectional view (part 2) for explaining a manufacturing method of the solid-state imaging device 100 according to the fifth modified example of the seventh embodiment of the present disclosure. [Figure 60] FIG. 13 is a third cross-sectional view for explaining a manufacturing method of the solid-state imaging device 100 according to the fifth modified example of the seventh embodiment of the present disclosure. [Figure 61] FIG. 13 is a fourth cross-sectional view for explaining a manufacturing method of the solid-state imaging device 100 according to the fifth modified example of the seventh embodiment of the present disclosure. [Figure 62] 1 is a diagram illustrating an example of a schematic configuration of an endoscopic surgery system. [Figure 63] 2 is a block diagram showing an example of a functional configuration of a camera head and a CCU. FIG. [Figure 64] 1 is a block diagram showing an example of a schematic configuration of a vehicle control system; [Figure 65] 4 is an explanatory diagram showing an example of the installation positions of an outside-vehicle information detection unit and an imaging unit; FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0015] Hereinafter, preferred embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. In this specification and the drawings, components having substantially the same functional configurations are denoted by the same reference numerals, and redundant description will be omitted.

[0016] In addition, in this specification and drawings, similar components in different embodiments may be distinguished by adding different alphabets after the same reference numerals. However, when there is no need to particularly distinguish between similar components, only the same reference numerals are used.

[0017] In addition, the drawings referred to in the following description are drawings for explaining and understanding the embodiments of the present disclosure, and for the sake of clarity, the shapes, dimensions, ratios, etc. shown in the drawings may differ from the actual ones. Furthermore, the solid-state imaging element and solid-state imaging device shown in the drawings may be appropriately redesigned in consideration of the following explanation and known techniques. In addition, the up-down direction of the stacked structure of the solid-state imaging element in the explanation using the cross-sectional view of the solid-state imaging element corresponds to the relative direction when the incident surface on which light is incident on the solid-state imaging element is the top, and may differ from the up-down direction according to the actual gravitational acceleration.

[0018] Furthermore, in the following description of the circuit configuration, unless otherwise specified, "electrically connected" means connecting multiple elements so that electricity is conducted between them. In addition, in the following description, "electrically connected" includes not only cases where multiple elements are directly and electrically connected, but also cases where multiple elements are indirectly and electrically connected via other elements.

[0019] In the following description, "sharing" refers to the joint use of one other element (e.g., an electrode) between different elements (e.g., a PD, etc.), and more specifically, refers to a state in which both different elements are electrically connected to the one other element, thereby jointly using the one other element.

[0020] In the following description, "gate" refers to the gate electrode of a field effect transistor (FET), "drain" refers to the drain electrode or drain region of the FET, and "source" refers to the source electrode or source region of the FET.

[0021] The explanation will be given in the following order. 1. Background of how the present inventors created the embodiments of the present disclosure 2. First embodiment 2.1 Overview of the configuration of the solid-state imaging device 1 2.2 Stacked structure of the solid-state imaging device 100 2.3 Layout of the Solid-State Imaging Device 100 2.4 Equivalent circuit of the solid-state imaging device 100 2.5 Readout method of the solid-state imaging device 100 3. Second embodiment 4. Third embodiment 5. Fourth embodiment 6. Fifth embodiment 7. Sixth embodiment 8. Seventh embodiment 9. Application example to endoscopic surgery system 10. Mobile Applications 11. Summary 12. Supplementary Information

[0022] <<1. Background of the Invention That Leads to the Creation of the Embodiments of the Present Disclosure>> First, before describing the details of each embodiment of the present disclosure, the background that led the present inventors to create the embodiments of the present disclosure will be described with reference to Fig. 13. Fig. 13 is a cross-sectional view of a pixel array section 80 according to a comparative example. Here, the comparative example refers to a solid-state imaging device (image sensor) that the present inventors had been studying extensively before creating the embodiments of the present disclosure.

[0023] In recent years, there has been a demand for reducing the pixel size of image sensors. However, as pixel size decreases, the amount of light incident on each pixel decreases, resulting in reduced sensitivity and a lower S / N (signal / noise) ratio.

[0024] In addition, in image sensors, a configuration (e.g., a Bayer array) in which pixels that detect red, green, and blue light, respectively, using primary color filters, are arranged on a plane is widely used. In the case of such a configuration, for example, in a pixel that detects red light, green light and blue light are difficult to transmit through the color filter of the pixel, so they are not photoelectrically converted in the pixel, that is, they are not detected. Therefore, in the case of the above-mentioned configuration, since each pixel detects light of one specific color and cannot detect light of other colors, it cannot be said that the light incident on each pixel is fully utilized, in other words, it can be said that a loss occurs in terms of pixel sensitivity. In addition, in the case of the above-mentioned configuration, since an interpolation process is performed between pixels, false colors occur due to the generation of color signals by interpolation.

[0025] As a method for solving the above-mentioned situation, there is an image sensor in which photoelectric conversion films capable of performing photoelectric conversion with red light, green light, and blue light, respectively, are stacked vertically in three layers in a unit pixel, and three colors of light can be detected with one unit pixel (for example, Patent Documents 1 and 5 mentioned above). Other examples of image sensors capable of detecting three colors of light with one unit pixel include the following. For example, as disclosed in Patent Document 2 mentioned above, there is an image sensor having a semiconductor substrate on which two PDs for detecting red light and blue light, respectively, are stacked, and a photoelectric conversion film provided above the semiconductor substrate and capable of performing photoelectric conversion with green light.

[0026] Furthermore, in an image sensor having a semiconductor substrate on which two PDs are stacked and a photoelectric conversion film provided above the semiconductor substrate, the following circuit configurations for extracting pixel signals can be cited. For example, as described above and disclosed in the above Patent Document 3, a back-illuminated structure can be cited in which a circuit formation layer on which the above circuit is formed is formed on the opposite side of the light receiving surface of the image sensor. In the case of the above structure, no circuit or wiring is provided between the PD in the semiconductor substrate and the photoelectric conversion film provided above the semiconductor substrate. Therefore, according to this structure, it is possible to shorten the distance between the PD and the photoelectric conversion film in the stacking direction (vertical direction) in the same pixel. As a result, in this structure, the F-number dependency of each color can be suppressed, and the difference in sensitivity between each color can be reduced.

[0027] As another example of the image sensor, there may be mentioned an image sensor as disclosed in the above-mentioned Patent Document 4. The above-mentioned Patent Document 4 discloses a structure in which a semiconductor layer for storing and transferring charges obtained by photoelectric conversion and a storage electrode facing the semiconductor layer through an insulating film are provided directly below a photoelectric conversion film provided above a semiconductor substrate. In this structure, charges generated by photoelectric conversion by the photoelectric conversion film can be efficiently stored in the photoelectric conversion film like a type of capacitor. Furthermore, in the above-mentioned structure, since charges can be stored in the photoelectric conversion film, it is possible to completely deplete a charge storage section (floating diffusion section) provided in the semiconductor substrate at the start of exposure and erase the charges. As a result, according to this structure, it is possible to suppress the occurrence of a phenomenon in which random noise deteriorates due to an increase in kTC noise (noise caused by thermal fluctuation of charges) caused by the charges in the charge storage section, and the image quality of the image sensor deteriorates.

[0028] Incidentally, when a plurality of PDs are provided in a unit pixel as described above (for example, Patent Document 5), a charge storage section is provided for each PD in the semiconductor substrate in order to extract the charge generated by the photoelectric conversion for each PD. Furthermore, in order to transfer the charge generated by the photoelectric conversion for each PD to each charge storage section, a through electrode, wiring, etc. penetrating the semiconductor substrate are provided for each PD. A solid-state imaging element 800 having such a structure will be described with reference to FIG. 13. FIG. 13 is a cross-sectional view of a pixel array section 80 having a plurality of solid-state imaging elements 800 arranged two-dimensionally in a matrix on a semiconductor substrate 300 of a solid-state imaging device according to a comparative example. In FIG. 13, the solid-state imaging element 800 is illustrated so that the incident surface on which light is incident on the solid-state imaging element 800 faces upward.

[0029] 13, in the comparative example, PDs 802, 804, and 806 are stacked on a semiconductor substrate 300. Furthermore, in the comparative example, each of the PDs 802, 804, and 806 is electrically connected to a floating diffusion portion (charge storage portion) 814 provided in the semiconductor substrate 300 in order to temporarily store generated charges. More specifically, in the comparative example, each of the PDs 802, 804, and 806 is electrically connected to each of the floating diffusion portions 814 via a through electrode 860 provided so as to penetrate the semiconductor substrate 300.

[0030] In such a comparative example, due to the provision of a plurality of through electrodes 860, for example, the incident surface (length in the left-right direction in FIG. 13) of each of the PDs 802, 804, and 806 through which light is incident is reduced, and the amount of light incident on each of the PDs 802, 804, and 806 is reduced. As a result, in the comparative example, the amount of light incident on the PDs 802, 804, and 806 is reduced, and the sensitivity characteristics of the PDs 802, 804, and 806 are reduced. On the other hand, if an attempt is made to avoid the reduction in the incident surfaces of the PDs 802, 804, and 806, the area of ​​the chip on which the image sensor (solid-state imaging device) is mounted increases, making it difficult to avoid an increase in the manufacturing cost of the image sensor.

[0031] In addition, in the comparative example, since the through electrodes 860 penetrating the semiconductor substrate 300 are provided in the number equal to the number of the PDs 802, 804, and 806, the crystallinity of the semiconductor substrate 300 decreases, making it difficult to avoid deterioration of the dark current characteristics of the image sensor.

[0032] In view of the above-mentioned circumstances, the present inventors have been studying intensively a solid-state imaging device that can avoid the increase in manufacturing costs while avoiding the deterioration of characteristics. In the course of the study, the present inventors have independently conceived the idea that one charge storage section and one through electrode can be shared among different PDs by utilizing the fact that it is possible to temporarily store charges in the photoelectric conversion film of each PD using the above-mentioned storage electrode. If one charge storage section and one through electrode can be shared among different PDs, it is possible to avoid the reduction in the incidence surface of each PD due to the provision of multiple through electrodes, and therefore it is possible to avoid the reduction in the amount of light incident on each PD. Therefore, by sharing between different PDs as described above, it is possible to avoid the deterioration of the sensitivity characteristics of each PD. Furthermore, if the charge storage section and through electrode can be shared between different PDs as described above, it is possible to avoid the increase in the area of ​​the chip on which the image sensor is mounted, and therefore it is possible to avoid the increase in the manufacturing cost of the solid-state imaging device. In addition, if one through electrode can be shared between different PDs, it is possible to reduce the number of through electrodes penetrating the semiconductor substrate, and therefore it is possible to avoid the deterioration of the dark current characteristics of the image sensor caused by the deterioration of the crystallinity of the semiconductor substrate.

[0033] That is, the inventors have created the embodiments of the present disclosure with the above-mentioned idea as a main point of view. The details of the embodiments of the present disclosure will be described below in order.

[0034] <<2. First embodiment>> <2.1 Schematic configuration of the solid-state imaging device 1> First, a schematic configuration of a solid-state imaging device 1 according to a first embodiment of the present disclosure will be described with reference to Fig. 1. Fig. 1 is an explanatory diagram showing an example of a planar configuration of the solid-state imaging device 1 according to this embodiment. As shown in Fig. 1, the solid-state imaging device 1 according to this embodiment includes a pixel array section 10, a vertical driving circuit section 32, a column signal processing circuit section 34, a horizontal driving circuit section 36, an output circuit section 38, a control circuit section 40, and the like, which are provided on a semiconductor substrate 300 made of, for example, silicon. Each block of the solid-state imaging device 1 according to this embodiment will be described in detail below.

[0035] (Pixel array section 10) The pixel array unit 10 has a plurality of solid-state imaging elements (pixels) 100 arranged two-dimensionally in a matrix on a semiconductor substrate 300. The solid-state imaging element 100 means a solid-state imaging element (unit pixel) that can be regarded as one unit that detects light of each color and outputs one result for each color when outputting the detection result. Each solid-state imaging element 100 has a plurality of photoelectric conversion elements (PD) (not shown) and a plurality of pixel transistors (e.g., MOS (Metal-Oxide-Semiconductor) transistors) (not shown). More specifically, the pixel transistors can include, for example, a transfer transistor, a selection transistor, a reset transistor, and an amplification transistor. The circuit (connection configuration) of these pixel transistors will be described in detail later.

[0036] (Vertical drive circuit section 32) The vertical drive circuit unit 32 is formed of, for example, a shift register, selects a pixel drive wiring 42, supplies a pulse for driving the solid-state imaging element 100 to the selected pixel drive wiring 42, and drives the solid-state imaging element 100 row by row. That is, the vertical drive circuit unit 32 selects and scans each solid-state imaging element 100 in the pixel array unit 10 in the vertical direction (up and down direction in FIG. 1) sequentially row by row, and supplies a pixel signal based on a charge generated according to the amount of light received by the PD of each solid-state imaging element 100 to a column signal processing circuit unit 34 (described later) through a vertical signal line 44.

[0037] (Column signal processing circuit unit 34) The column signal processing circuit unit 34 is arranged for each column of the solid-state imaging element 100, and performs signal processing such as noise removal for each pixel column on pixel signals output from one row of the solid-state imaging element 100. For example, the column signal processing circuit unit 34 performs signal processing such as CDS (Correlated Double Sampling) and AD (Analog-Digital) conversion in order to remove fixed pattern noise specific to each pixel.

[0038] (Horizontal drive circuit section 36) The horizontal drive circuit unit 36 ​​is formed, for example, by a shift register, and by sequentially outputting horizontal scanning pulses, it can select each of the above-mentioned column signal processing circuit units 34 in turn and output pixel signals from each of the column signal processing circuit units 34 to the horizontal signal line 46.

[0039] (Output circuit section 38) The output circuit unit 38 can process and output pixel signals sequentially supplied from each of the column signal processing circuit units 34 through the horizontal signal line 46. The output circuit unit 38 may function as a functional unit that performs buffering, or may perform black level adjustment, column variation correction, various digital signal processing, and other processes. Note that buffering refers to temporarily storing pixel signals to compensate for differences in processing speed and transfer speed when exchanging pixel signals. The input / output terminal 48 is a terminal for exchanging signals with an external device.

[0040] (Control circuit section 40) The control circuit section 40 receives an input clock and data instructing an operation mode and the like, and can also output data such as internal information of the solid-state imaging device 100. That is, the control circuit section 40 generates clock signals and control signals that serve as a reference for the operation of the vertical drive circuit section 32, the column signal processing circuit section 34, the horizontal drive circuit section 36, etc., based on a vertical synchronization signal, a horizontal synchronization signal, and a master clock. Then, the control circuit section 40 outputs the generated clock signals and control signals to the vertical drive circuit section 32, the column signal processing circuit section 34, the horizontal drive circuit section 36, etc.

[0041] Note that the planar configuration example of the solid-state imaging device 1 according to this embodiment is not limited to the example shown in FIG. 1, and may include other circuits, for example, and is not particularly limited.

[0042] <2.2 Laminated structure of the solid-state imaging device 100> The schematic configuration of the solid-state imaging device 1 according to this embodiment has been described above. Next, with reference to FIG. 2, the stacked structure of the solid-state imaging element 100 according to this embodiment will be described. FIG. 2 is a cross-sectional view of the pixel array section 10 according to this embodiment. In FIG. 2, the solid-state imaging element 100 is illustrated so that the incident surface on which light is incident on the solid-state imaging element 100 faces upward. In the following description, the stacked structure of the solid-state imaging element 100 will be described in the order from the semiconductor substrate 300 located below the solid-state imaging element 100 to the PD500 (first photoelectric conversion unit) provided above the semiconductor substrate 300, and the PD600 (second photoelectric conversion unit) provided above the PD500.

[0043] 2, in the solid-state imaging device 100, a semiconductor region 410 having a second conductivity type (e.g., N type) is provided in a semiconductor region 310 having a first conductivity type (e.g., P type) of a semiconductor substrate 300 made of, for example, silicon. A PD 400 (fourth photoelectric conversion unit) that converts light into electric charges is formed in the semiconductor substrate 300 by a PN junction of such a semiconductor region 410. In this embodiment, the PD 400 is a photoelectric conversion element that absorbs, for example, red light (e.g., light having a wavelength of 600 nm to 700 nm) and generates electric charges.

[0044] Further, on the opposite side of the semiconductor substrate 300 from the incident surface (lower side in FIG. 2), a wiring layer 200 is provided, which includes wiring 230 formed of tungsten (W), aluminum (Al), copper (Cu), cobalt (Co), ruthenium (Ru), or the like, and an interlayer insulating film 240 formed of silicon oxide (SiO2), or the like. Furthermore, the wiring layer 200 is provided with a plurality of electrodes 232 formed of W, Al, Cu, or the like as gate electrodes of a plurality of pixel transistors for reading out charges generated in the PDs 400, 500, and 600. Specifically, the electrodes 232 are provided so as to face a semiconductor region 310 having a first conductivity type (e.g., P type) in the semiconductor substrate 300 via an insulating film 450. Furthermore, in the semiconductor substrate 300, a semiconductor region 312 having a second conductivity type (e.g., N type) is provided adjacent to the semiconductor region 310 having the first conductivity type, and the semiconductor region 312 functions as a source / drain region of the pixel transistor. In this embodiment, some of the pixel transistors provided in the semiconductor substrate 300 are shared by the PDs 500 and 600 provided above the semiconductor substrate 300. In other words, in this embodiment, some of the pixel transistors can be said to be common pixel transistors shared by the PDs 500 and 600.

[0045] Furthermore, in the semiconductor substrate 300, a floating diffusion section (common charge storage section) 314, which is a semiconductor region having a second conductivity type (for example, N type), is provided. The floating diffusion section 314 can temporarily store the charge generated in the PDs 400, 500, and 600. In this embodiment, a part of the floating diffusion sections 314 is provided in common to the PDs 500 and 600, in other words, shared by the PDs 500 and 600, in order to temporarily store the charge generated in the PDs 500 and 600. In addition, in this embodiment, an isolation insulating film 342 made of SiO2 or the like may be provided in the semiconductor substrate 300 so as to be adjacent to the floating diffusion section 314 and the semiconductor region 312 which is the source / drain region of each pixel transistor.

[0046] In this embodiment, as shown in FIG. 2, a through electrode (common through electrode) 460 shared by the PDs 500 and 600 is provided to penetrate the semiconductor substrate 300 in order to extract the electric charge generated in the PDs 500 and 600 to be described later to the wiring 230. The through electrode 460 can be formed of a metal film such as Cu, W, Al, etc. In addition, in order to prevent a short circuit between the through electrode 460 and the semiconductor substrate 300, an insulating film 462 made of SiO2 or the like is provided to cover the outer periphery of the through electrode 460. Furthermore, in this embodiment, a barrier metal film (not shown) may be provided between the through electrode 460 and the insulating film 462 surrounding the outer periphery of the through electrode 460. The barrier metal film can be formed of a material such as titanium nitride (TiN), tungsten nitride (WN), titanium (Ti), tantalum nitride (TaN), tantalum (Ta), zirconium (Zr), Ru, Co, etc.

[0047] The through electrode 460 can electrically connect readout electrodes (lower electrodes) 508, 608 of the PDs 500, 600 (described later) to a floating diffusion section 314 provided in the semiconductor substrate 300 via the wiring 230 provided in the wiring layer 200. Therefore, the floating diffusion section 314 can temporarily store charges generated by photoelectric conversion in the PDs 500, 600 by the through electrode 460. Furthermore, the through electrode 460 can electrically connect the readout electrodes 508, 608 of the PDs 500, 600 to pixel transistors provided in the semiconductor substrate 300.

[0048] The through electrode 460 can be formed as follows. For example, a through hole penetrating the semiconductor substrate 300 is created, and the insulating film 462 and the barrier metal are deposited by a physical vapor deposition (PVD) method, a chemical vapor deposition (CVD) method, an atomic layer deposition (ALD) method, or the like so as to cover the inner wall of the through hole. Furthermore, for example, after etching the deposited insulating film 462 and the barrier metal, a metal film such as Cu, W, Al, or the like is deposited by a plating method, a CVD method, a PVD method, or an ALD method so as to fill the through hole. In this manner, the through electrode 460 can be formed.

[0049] In this embodiment, a semiconductor region (not shown) having a first conductivity type (e.g., P type) may be provided on the incident surface of the semiconductor substrate 300, and an anti-reflection film 402 made of aluminum oxide (Al2O3) may be provided on the semiconductor region.

[0050] In this embodiment, as shown in Fig. 2, a wiring layer (first wiring layer) 520 including an insulating film 540 made of, for example, SiO2 or the like that can transmit light and a wiring (first wiring) 530 made of, for example, W, is provided between the semiconductor substrate 300 and the PD 500. Since the insulating film 540 can transmit light, the PD 400 provided below the insulating film 540 can receive light and perform photoelectric conversion, that is, detect light. In addition, readout electrodes 508, 608 of the PDs 500, 600 described later are electrically connected to the through electrode 460 described above via the wiring 530.

[0051] In this embodiment, a photoelectric conversion film 504 is provided on the wiring layer 520 so as to be sandwiched between a common electrode (upper electrode) 502 shared between adjacent solid-state imaging elements 100 (specifically, adjacent in the left-right direction in FIG. 2) and a readout electrode 508 for reading out charges generated in the photoelectric conversion film 504. The common electrode 502, the photoelectric conversion film 504, and the readout electrode 508 constitute a part of a laminated structure of a PD 500 (first photoelectric conversion unit) that converts light into charges. In this embodiment, the PD 500 is a photoelectric conversion element that absorbs, for example, green light (for example, light having a wavelength of 500 nm to 600 nm) and generates charges (photoelectric conversion). Details of materials constituting the common electrode 502, the photoelectric conversion film 504, and the readout electrode 508 will be described later.

[0052] Further, in this embodiment, as shown in FIG. 2, the PD 500 has a storage electrode 510 facing the common electrode 502 via the photoelectric conversion film 504 and the insulating film 506 in order to temporarily store the charge generated in the photoelectric conversion film 504 in the photoelectric conversion film 504. In this embodiment, the storage electrode 510 may face the common electrode 502 via a semiconductor layer (not shown) sandwiched between the photoelectric conversion film 504 and the insulating film 506. The semiconductor layer is provided to more efficiently store the charge, and is preferably made of an oxide semiconductor material that can transmit light. Details of materials constituting the storage electrode 510, the insulating film 506, and the semiconductor layer will be described later.

[0053] 2, the readout electrode 508 in contact with the photoelectric conversion film 504 is electrically connected to the floating diffusion portion 314 provided in the semiconductor substrate 300 via the through electrode 460. The common electrode 502 is electrically connected to a wiring 570 that applies a desired potential to the common electrode 502. The storage electrode 510 is electrically connected to a wiring 572 that applies a desired potential to the storage electrode 510.

[0054] Therefore, in this embodiment, by controlling the potentials applied to the common electrode 502, the readout electrode 508, and the storage electrode 510, the charge generated in the photoelectric conversion film 504 can be stored in the photoelectric conversion film 504 or the interface of the photoelectric conversion film 504, or the charge can be extracted to the floating diffusion section 314. In other words, the storage electrode 510 can function as a charge storage electrode for attracting the charge generated in the photoelectric conversion film 504 and storing the charge in the photoelectric conversion film 504 according to the applied potential. Note that, in this embodiment, in order to effectively utilize the light incident on the solid-state imaging device 100, it is preferable that the storage electrode 510 is provided so as to have a larger area than the readout electrode 508 when the solid-state imaging device 100 is viewed from above the incident surface.

[0055] In this embodiment, as shown in FIG. 2, a wiring layer (second wiring layer) 620 including an insulating film 640 made of, for example, SiO2 or the like that can transmit light and a wiring (second wiring) 630 made of, for example, W, is provided between the PD500 and the PD600. Since the insulating film 640 can also transmit light, the PD500 provided below the insulating film 640 can receive light and perform photoelectric conversion, that is, detect light. In addition, a readout electrode 608 of the PD600 described later is electrically connected to a through electrode (first through electrode) 560 described later via the wiring 630.

[0056] In this embodiment, as shown in FIG. 2, the through electrode 560 is provided so as to penetrate a part of the wiring layer 620 and the PD500 from the wiring 630 to the read electrode 508 of the PD500. In detail, the read electrode 608 of the PD600 is electrically connected to the read electrode 508 of the PD500 through the through electrode 560. Furthermore, the read electrode 608 of the PD600 is electrically connected to the floating diffusion section 314 provided in the semiconductor substrate 300 through the through electrode 560 and the through electrode 460. Therefore, the floating diffusion section 314 can temporarily store the charge generated by the photoelectric conversion in the PD600 by the through electrodes 460 and 560. Furthermore, the read electrode 608 of the PD600 can be electrically connected to the pixel transistor provided in the semiconductor substrate 300 through the through electrode 560 and the through electrode 460. In this embodiment, the through electrode 560 may penetrate a part of the wiring layer 620 and the PD 500, or may penetrate only the PD 500, and is not particularly limited.

[0057] In this embodiment, the through electrode 560 can be formed of a metal film such as Cu, W, Al, etc. Furthermore, the through electrode 560 may be formed of a transparent conductive film such as indium tin oxide (ITO) or indium zinc oxide (IZO). Moreover, an insulating film 562 made of SiO2 or the like may be provided on the periphery of the through electrode 560 to prevent a short circuit between the through electrode 560 and the PD 500. Furthermore, in this embodiment, a barrier metal film (not shown) may be provided between the through electrode 560 and the insulating film 562 surrounding the periphery of the through electrode 560. The barrier metal film may be formed of a material such as TiN, for example.

[0058] The through electrode 560 can be formed as follows. For example, a through hole penetrating the PD 500 is created, and an insulating film 562 is formed by a PVD method, a CVD method, an ALD method, or the like so as to cover the inner wall of the through hole. Furthermore, for example, after etching the formed insulating film 562, a metal film such as Cu is formed by a plating method, a CVD method, a PVD method, or an ALD method so as to fill the through hole. In this manner, the through electrode 560 can be formed.

[0059] Furthermore, in this embodiment, a PD 600 (second photoelectric conversion unit) that converts light into electric charges is provided on the wiring layer 620. The PD 600 is a photoelectric conversion element that absorbs, for example, blue light (for example, light having a wavelength of 400 nm to 500 nm) and generates electric charges (photoelectric conversion). In detail, the PD 600 includes a common electrode (upper electrode) 602, a photoelectric conversion film 604, an insulating film 606, a readout electrode (lower electrode) 608, and a storage electrode 610, which are sequentially stacked.

[0060] Moreover, the readout electrode 608 in contact with the photoelectric conversion film 604 is electrically connected to the through electrode 460 via the through electrode 560. Moreover, the common electrode 602 is electrically connected to a wiring 670 that applies a desired potential to the common electrode 602. Furthermore, the storage electrode 610 is electrically connected to a wiring 672 that applies a desired potential to the storage electrode 610.

[0061] 2, PD500 and PD600 each have a common electrode 502, 602, a photoelectric conversion film 504, 604, and a readout electrode 508, 508. Furthermore, in the stacked structures of PD500 and PD600, the above-mentioned layers are stacked in the same order. In other words, in the photoelectric conversion stacked structures of PD500 and PD600, the readout electrodes 508, 608, the photoelectric conversion films 504, 604, and the common electrodes 502, 602 are stacked in this order from the bottom.

[0062] In this embodiment, the layers of PD500 and PD600 may not be stacked in the order described above, and may be stacked in an order that is symmetrical in the stacking direction. In addition, in this embodiment, when the solid-state imaging device 100 is viewed from above the incident surface, the readout electrodes 508, 608 and storage electrodes 510, 610 of PD500 and PD600 may not completely overlap each other. In other words, in this embodiment, when the solid-state imaging device 100 is viewed from above the incident surface, the layout of the layers of PD500 and 600 is not particularly limited.

[0063] The above-mentioned photoelectric conversion films 504 and 604 can be formed from an organic material (organic photoelectric conversion film) or an inorganic material (inorganic photoelectric conversion film). For example, when the photoelectric conversion film is formed from an organic material, any one of the following four modes can be selected: (a) a P-type organic semiconductor material, (b) an N-type organic semiconductor material, (c) a laminated structure of at least two of a P-type organic semiconductor material layer, an N-type organic semiconductor material layer, and a mixed layer (bulk heterostructure) of a P-type organic semiconductor material and an N-type organic semiconductor material, and (d) a mixed layer of a P-type organic semiconductor material and an N-type organic semiconductor material. Note that the photoelectric conversion film using an organic material also includes a laminated structure in which an electron blocking film and buffer film in contact with the readout electrode 508 or 608, a photoelectric conversion film, a hole blocking film, a hole blocking and buffer film, and a work function adjustment film are laminated.

[0064] In detail, examples of the P-type organic semiconductor material include naphthalene derivatives, anthracene derivatives, phenanthrene derivatives, pyrene derivatives, perylene derivatives, tetracene derivatives, pentacene derivatives, quinacridone derivatives, coumarin derivatives, pyrromethene derivatives, pyran derivatives, phenoxazone derivatives, thiophene derivatives, thienothiophene derivatives, benzothiophene derivatives, benzothienobenzothiophene (BTBT) derivatives, dinaphthothienothiophene (DNTT) derivatives, dianthracenothienothiophene (DATT) derivatives, benzobisbenzothiophene (BBBT) derivatives, naphthalenebisbenzothiophene (NBBT), thienobisbenzothiophene (TBBT) derivatives, dibenzothienobisbenzothiophene (BBBT) derivatives, and the like. Examples of the aromatic thiophene derivatives include dithiophene (DBTBT) derivatives, dithienobenzodithiophene (DTBDT) derivatives, dibenzothienodithiophene (DBTDT) derivatives, benzodithiophene (BDT) derivatives, naphthodithiophene (NDT) derivatives, anthracenodithiophene (ADT) derivatives, tetracenodithiophene (TDT) derivatives, pentacenodithiophene (PDT) derivatives, triallylamine derivatives, carbazole derivatives, picene derivatives, chrysene derivatives, fluoranthene derivatives, phthalocyanine derivatives, subphthalocyanine derivatives, subporphyrazine derivatives, metal complexes having a heterocyclic compound as a ligand, polythiophene derivatives, polybenzothiadiazole derivatives, and polyfluorene derivatives.

[0065] As the n-type organic semiconductor material, fullerene and fullerene derivatives (for example, fullerenes (higher fullerenes) such as C60, C70, and C74, endohedral fullerenes, etc.) or fullerene derivatives (for example, fullerene fluorides and PCBM (Phenyl-C 61Examples of such organic semiconductors include p-type organic semiconductors having a deeper HOMO (Highest Occupied Molecular Orbital) and LUMO (Lowest Unoccupied Molecular Orbital), p-type organic semiconductors having a deeper HOMO (Highest Occupied Molecular Orbital) and LUMO (Lowest Unoccupied Molecular Orbital), and inorganic metal oxides that can transmit light. More specifically, examples of N-type organic semiconductor materials include organic molecules having heterocyclic compounds containing nitrogen atoms, oxygen atoms, or sulfur atoms as part of their molecular skeletons, such as pyridine derivatives, pyrromethene derivatives, pyrazine derivatives, pyrimidine derivatives, triazine derivatives, quinoline derivatives, quinoxaline derivatives, isoquinoline derivatives, coumarin derivatives, pyran derivatives, phenoxazone derivatives, perylene derivatives, acridine derivatives, phenazine derivatives, phenanthroline derivatives, tetrazole derivatives, pyrazole derivatives, imidazole derivatives, thiazole derivatives, oxazole derivatives, imidazole derivatives, benzimidazole derivatives, benzotriazole derivatives, benzoxazole derivatives, benzoxazole derivatives, carbazole derivatives, benzofuran derivatives, dibenzofuran derivatives, subporphyrazine derivatives, polyphenylenevinylene derivatives, polybenzothiadiazole derivatives, and polyfluorene derivatives, as well as organometallic complexes and subphthalocyanine derivatives. Further, examples of groups contained in the fullerene derivative include a branched or cyclic alkyl group or phenyl group; a group having a linear or condensed aromatic compound; a group having a halide; a partial fluoroalkyl group; a perfluoroalkyl group; a silylalkyl group; a silylalkoxy group; an arylsilyl group; an arylsulfanyl group; an alkylsulfanyl group; an arylsulfonyl group; an alkylsulfonyl group; an arylsulfide group; an alkylsulfide group; an amino group; an alkylamino group; an arylamino group; a hydroxy group; an alkoxy group; an acylamino group; an acyloxy group; a carbonyl group; a carboxy group; a carboxamide group; a carboalkoxy group; an acyl group; a sulfonyl group; a cyano group; a nitro group; a group having a chalcogenide; a phosphine group; a phosphonic group; and derivatives thereof.The thickness of the photoelectric conversion film made of an organic material is not limited, but is, for example, 1×10 -8 m~5×10 -7 m, preferably 2.5 × 10 -8 m~3×10 -7 m, more preferably 2.5 × 10 -8 m to 2×10 -7 m. In the above explanation, the organic semiconductor materials are classified into P-type and N-type, but here, P-type means that it is easy to transport holes, and N-type means that it is easy to transport electrons. In other words, organic semiconductor materials are not limited to the interpretation that they have holes or electrons as the majority carriers of thermal excitation, unlike inorganic semiconductor materials.

[0066] Furthermore, the photoelectric conversion films 504 and 604 may be formed of a polymer of phenylenevinylene, fluorene, carbazole, indole, pyrene, pyrrole, picoline, thiophene, acetylene, diacetylene, or the like, or a derivative thereof.

[0067] In addition, when the photoelectric conversion film 504, 604 is formed from an inorganic material, examples of the inorganic semiconductor material include crystalline silicon, amorphous silicon, microcrystalline silicon, crystalline selenium, amorphous selenium, and chalcobalite-based compounds such as CIGS (CuInGaSe), CIS (CuInSe2), CuInS2, CuAlS2, CuAlSe2, CuGaS2, CuGaSe2, AgAlS2, AgAlSe2, AgInS2, and AgInSe2, as well as III-V group compounds such as GaAs, InP, AlGaAs, InGaP, AlGaInP, and InGaAsP, as well as compound semiconductors such as CdSe, CdS, In2Se3, In2S3, Bi2Se3, Bi2S3, ZnSe, ZnS, PbSe, and PbS. In addition, in this embodiment, quantum dots made of the above-mentioned materials can also be used as the photoelectric conversion film 504, 604.

[0068] Furthermore, in order to detect blue light and green light, the photoelectric conversion films 504 and 604 can preferably use, for example, metal complex dyes, rhodamine dyes, quinacridone dyes, cyanine dyes, melacyanine dyes, phenylxanthene dyes, triphenylmethane dyes, rhodacyanine dyes, xanthene dyes, macrocyclic azaannulene dyes, azulene dyes, naphthoquinone, anthraquinone dyes, condensed polycyclic aromatics such as anthracene and pyrene, and chain compounds in which aromatic rings or heterocyclic compounds are condensed, or two nitrogen-containing heterocycles such as quinoline, benzothiazole and benzoxazole having a squarylium group and a croconite methine group as a bonding chain, or cyanine-like dyes bonded by a squarylium group and a croconite methine group. Of the metal complex dyes, dithiol metal complex dyes, metal phthalocyanine dyes, metal porphyrin dyes, and ruthenium complex dyes are preferred, with ruthenium complex dyes being particularly preferred, although the invention is not limited to these.

[0069] In this embodiment, the photoelectric conversion films 504 and 604 can be formed by mixing or laminating several kinds of materials in order to improve the characteristics. Furthermore, in this embodiment, the photoelectric conversion films 504 and 604 can be formed by laminating or mixing materials that do not directly contribute to photoelectric conversion in order to improve the characteristics.

[0070] In addition, in this embodiment, the common electrodes 502, 602, the readout electrodes 508, 608, and the storage electrodes 510, 610 can be formed of a transparent conductive film that can transmit light, such as a tin-indium oxide (including ITO, crystalline ITO, and amorphous ITO) film. However, in this embodiment, the common electrodes 502, 602, the readout electrodes 508, 608, and the storage electrodes 510, 610 are not limited to ITO as described above, and may be other materials. For example, the transparent conductive film is preferably a material with a band gap of 2.5 eV or more, preferably 3.1 eV or more. For example, the transparent conductive film may be a tin oxide-based material such as tin oxide, antimony-tin oxide (SnO2 with Sb added as a dopant, e.g. ATO), or fluorine-tin oxide (SnO2 with F added as a dopant, e.g. FTO). Examples of zinc oxide-based materials include aluminum zinc oxide (ZnO with Al added as a dopant, e.g., AZO), gallium zinc oxide (ZnO with Ga added as a dopant, e.g., GZO), indium zinc oxide (ZnO with In added as a dopant, e.g., IZO), indium gallium zinc oxide (ZnO4 with In and Ga added as dopants, e.g., IGZO), indium tin zinc oxide (ZnO with In and Sn added as dopants, e.g., ITZO), etc. Indium gallium oxide (Ga2O3 with In added as a dopant, e.g., IGO), CuInO2, MgIn2O4, CuI, InSbO4, ZnMgO, CdO, ZnSnO3, graphene, etc.

[0071] In this embodiment, the insulating films 506 and 606 can be made of, for example, SiO 2 , Al 2 O 3 , silicon nitride (Si 3 N 4 ), or the like that is capable of transmitting light, and are not particularly limited.

[0072] Furthermore, in this embodiment, the semiconductor layer (not shown) included in the PD 500, 600 is preferably formed using a material having a higher charge mobility and a larger band gap than the photoelectric conversion film 504, 604. For example, the band gap of the material constituting the semiconductor layer is preferably 3.0 eV or more. Examples of such materials include oxide semiconductor materials such as IGZO and organic semiconductor materials. Examples of organic semiconductor materials include transition metal dichalcogenides, silicon carbide, diamond, graphene, carbon nanotubes, condensed polycyclic hydrocarbon compounds, and condensed heterocyclic compounds. The semiconductor layer may be formed of a single film, or may be formed by stacking multiple films.

[0073] 2, in this embodiment, an insulating film 780 made of a material such as a SiO2 film that can transmit light is provided on the PD 600. Furthermore, an on-chip lens 790 is provided on the insulating film 780 for each solid-state imaging element 100. The on-chip lens 790 can be formed of, for example, Si3N4 or a resin material such as a styrene resin, an acrylic resin, a styrene-acrylic copolymer resin, or a siloxane resin.

[0074] As described above, the solid-state imaging device 100 according to this embodiment has a stacked structure in which PD400, PD500, and PD600 are stacked to detect three colors of light, respectively. That is, the above-mentioned solid-state imaging device 100 can be said to be a vertical-spectral type solid-state imaging device in which, for example, blue light is photoelectrically converted by the photoelectric conversion film 604 (PD600) formed above the semiconductor substrate 300, green light is photoelectrically converted by the photoelectric conversion film 504 (PD500) provided below the PD600, and red light is photoelectrically converted by the PD400 provided in the semiconductor substrate 300. Note that, in this embodiment, the above-mentioned solid-state imaging device 100 is not limited to the vertical-spectral type stacked structure as described above. For example, green light may be photoelectrically converted by the photoelectric conversion film 604 (PD600) formed above the semiconductor substrate 300, and blue light may be photoelectrically converted by the photoelectric conversion film 504 (PD500) provided below the PD600.

[0075] <2.3 Layout configuration of the solid-state imaging device 100> The stacked structure of the solid-state imaging element 100 according to this embodiment has been described above. Next, the layout configuration of the solid-state imaging element 100 according to this embodiment will be described with reference to Figs. 3 to 5. Fig. 3 is an explanatory diagram showing a part of a cross-sectional view of the solid-state imaging element 100 according to this embodiment, and in detail, PD500 and PD600 are mainly shown. Fig. 4 is a cross-sectional view of the solid-state imaging element 100 cut along line AA' in Fig. 3. Furthermore, Fig. 5 is a cross-sectional view of the solid-state imaging element 100 cut along line BB' in Fig. 3.

[0076] 3, in this embodiment, the PD500 and PD600 have a structure in which common electrodes 502, 602, photoelectric conversion films 504, 604, readout electrodes 508, 608, insulating films 506, 606, and storage electrodes 510, 610 are sequentially stacked. The readout electrode 608 of the PD600 and the readout electrode 508 of the PD500 are electrically connected via a wiring 530 and a through electrode 560. The readout electrode 608 of the PD600 and the readout electrode 508 of the PD500 are electrically connected to the through electrode 460 via the wiring 530.

[0077] 4, which shows a cut surface of the solid-state imaging element 100 seen from above the solid-state imaging element 100 cut along line AA' (the interface between the insulating film 606 and the storage electrode 610) shown in Fig. 3, the readout electrode 608 is provided with an exposed region (second exposed region) 608a exposed from an opening 606a provided in the insulating film 606 and in contact with the photoelectric conversion film 604. Furthermore, a contact region (second contact region) 608b electrically connected to the wiring 630 connected to the through electrode 560 is provided in a part of the exposed region 608a.

[0078] 5, which shows the solid-state imaging element 100 cut along line BB' (the interface between the insulating film 506 and the storage electrode 510) shown in FIG. 3 and the cut surface viewed from above, the readout electrode 508 is provided with an exposed region (first exposed region) 508a exposed from an opening 506a provided in the insulating film 506 and in contact with the photoelectric conversion film 504. Furthermore, a contact region (first contact region) 508b is provided in a part of the remaining region of the readout electrode 508, in contact with the through electrode 560 and electrically connected to the through electrode 560. Furthermore, the contact region 508b is also electrically connected to the wiring 530 connected to the through electrode 460.

[0079] As described above, in this embodiment, the different PDs 500 and 600 share one floating diffusion section 314 and one through electrode 460. Therefore, according to this embodiment, it is possible to avoid an increase in the processing area of ​​the semiconductor substrate 300 due to the formation of the through electrode 460, and to avoid a reduction in the incident surface of the PD 400, so that the amount of light incident on the PD 400 does not decrease, and it is possible to avoid a decrease in the sensitivity characteristics of the PD 400. Furthermore, according to this embodiment, the different PDs 500 and 600 share the floating diffusion section 314 and the through electrode 460, so that it is possible to avoid an increase in the area of ​​the chip on which the solid-state imaging device 1 is mounted. As a result, according to this embodiment, it is possible to avoid an increase in the manufacturing cost of the solid-state imaging device 1. In addition, according to this embodiment, the different PDs 500 and 600 share one through electrode 460, so that it is possible to reduce the number of through electrodes 460 penetrating the semiconductor substrate 300. As a result, according to this embodiment, it is possible to avoid a deterioration in the dark current characteristics of the solid-state imaging device 1 caused by a decrease in the crystallinity of the semiconductor substrate 300.

[0080] <2.4 Equivalent circuit of the solid-state imaging device 100> The layout configuration of the solid-state imaging device 100 according to this embodiment has been described above. Next, an equivalent circuit of the solid-state imaging device 100 according to this embodiment, specifically, an equivalent circuit of the PDs 500 and 600 will be described with reference to Fig. 6. Fig. 6 is an equivalent circuit diagram of the PDs 500 and 600 of the solid-state imaging device 100 according to this embodiment.

[0081] As described above, in this embodiment, the PDs 500 and 600 have common electrodes 502 and 602, readout electrodes 508 and 508, and photoelectric conversion films 504 and 604 sandwiched therebetween. Furthermore, the PDs 500 and 600 have storage electrodes 510 and 610 that contact the photoelectric conversion films 504 and 604 via insulating films 506 and 606.

[0082] As shown in FIG. 6, the readout electrodes 508 and 608 include a reset transistor TR1 for resetting the accumulated charge. rstThe reset transistor TR1 is electrically connected to one of the drain and source of the reset transistor TR1 via a wiring or the like. rst The gate of the reset transistor TR1 is electrically connected to the reset signal line RST1 and is further electrically connected to the vertical drive circuit unit 32. rst The other of the drain / source (the side not connected to the readout electrodes 508, 608) is connected to a power supply circuit (power supply potential V DD ) in the present embodiment, as shown in FIG. rst can be said to be a common pixel transistor shared by PD500 and 600.

[0083] Furthermore, the read electrodes 508 and 608 include an amplifier transistor TR1 that converts the charge into a voltage and outputs it as a pixel signal. amp The read electrodes 508 and 608 and the amplifier transistor TR1 are electrically connected to the gate of the amplifier transistor TR1 through wiring. amp Gate and reset transistor TR1 rst The node FD1 that connects one of the drain / sources of the reset transistor TR1 rst In addition, FD1 also functions as a floating diffusion portion 314 shared by PDs 500 and 600. Charges from the read electrodes 508 and 608 change the potential of node FD1, and the charge of the amplifier transistor TR1 amp The amplifier transistor TR1 converts the amp One of the source and drain of the selection transistor TR1 outputs the pixel signal obtained by conversion to the signal line VSL1 in accordance with a selection signal. sel The amplifier transistor TR1 is electrically connected to one of the source and drain of the amplifier transistor TR1 via a wiring. amp The other of the source / drain of the selection transistor TR1 sel The side not connected to the power supply circuit (power supply potential V DD ) is electrically connected to the amplifier transistor TR1. amp and selection transistor TR1 selcan be said to be a common pixel transistor shared by PD500 and 600.

[0084] Furthermore, the selection transistor TR1 sel The other source / drain of the amplifier transistor TR1 amp The selection transistor TR1 (the side not connected to the signal line VSL1) is electrically connected to the signal line VSL1 that transmits the converted voltage as a pixel signal, and is further electrically connected to the column signal processing circuit unit 34. sel The gate of this pixel is electrically connected to a selection line SEL1 that selects a row for outputting a pixel signal, and is further electrically connected to the vertical drive circuit unit 32 described above.

[0085] 6, the storage electrodes 510, 610 are electrically connected to voltage application lines ASE1, ASE2, respectively. As described above, the storage electrodes 510, 610 can attract charges generated in the photoelectric conversion films 504, 604 in response to an applied potential, and store the charges in the photoelectric conversion films 504, 604, or transfer the charges to the readout electrodes 508, 608. Furthermore, the common electrodes 502, 602 are electrically connected to a selection line (not shown) that selects a column from which a pixel signal is output.

[0086] Next, for reference, an equivalent circuit of the PD 400 will also be described with reference to Fig. 7. Fig. 7 is an equivalent circuit diagram of the PD 400 included in the solid-state imaging device 100 according to this embodiment.

[0087] The PD 400 provided in the semiconductor substrate 300 is a pixel transistor (amplification transistor TR2) provided in the semiconductor substrate 300 as shown in FIG. amp , transfer transistor TR trs , reset transistor TR2 rst , selection transistor TR2 sel ) via wiring. In detail, one side of the PD 400 is connected to a transfer transistor TR trs The transfer transistor TRtrs The other source / drain of the reset transistor TR2 (the side not connected to PD400) rst The transfer transistor TR is electrically connected to one of the source and drain of the transfer transistor TR via a wiring. trs The gate of the reset transistor TR2 is electrically connected to the transfer gate line TG and is further connected to the vertical drive circuit unit 32. rst The other of the source / drain of the transfer transistor TR trs The side not connected to the power supply circuit (power supply potential V DD ) is electrically connected to the reset transistor TR2. rst The gate of this pixel is electrically connected to a reset line RST2, and is further connected to the vertical drive circuit section 32 described above.

[0088] Furthermore, the transfer transistor TR trs The other of the source / drain (the side not connected to the PD 400) is an amplifier transistor TR2 that amplifies (converts) the charge and outputs it as a pixel signal. amp The gate of the amplifier transistor TR2 is also electrically connected to the gate of the amplifier transistor TR3 through a wiring. amp One of the source and drain of the selection transistor TR2 outputs the pixel signal to the signal line VSL2 in accordance with a selection signal. sel The amplifier transistor TR2 is electrically connected to one of the source and drain of the amplifier transistor TR1 through a wiring. amp The other of the source / drain of the selection transistor TR2 sel The side not connected to the power supply circuit (power supply potential V DD ) is electrically connected to the selection transistor TR2. sel The other of the source / drain of the amplifier transistor TR2 amp The side not connected to the selection transistor TR2 is electrically connected to the signal line VSL2 and is further electrically connected to the column signal processing circuit unit 34. sel The gate of is electrically connected to the selection line SEL2, and further to the vertical drive circuit section 32 described above.

[0089] <2.5 Reading method of the solid-state imaging device 100> The equivalent circuit of the solid-state imaging element 100 according to this embodiment has been described above. Next, a readout method of the solid-state imaging element 100 according to this embodiment will be described with reference to Fig. 8. Fig. 8 is an explanatory diagram for explaining the readout method of the solid-state imaging element 100 according to this embodiment.

[0090] First, in this embodiment, a reset operation is performed as shown on the left side of Fig. 8. In this reset operation, the potential of the selection line SEL1 is set to 0V, and the potential of the reset line RST1 is set to 0V at the start, but when the power supply potential V DD Next, the potential of the reset line RST1 is switched to the power supply potential V DD At the same time, the potential of the storage electrode 510 of the PD 500 is changed to the power supply potential V DD to 0V, and after a certain time has elapsed, the power supply potential V DD Then, the potential of the storage electrode 510 of the PD 500 is returned to the power supply potential V DD At the same time, the potential of the storage electrode 610 of the PD 600 is changed to the power supply potential V DD to 0V, and after a certain time has elapsed, the power supply potential V DD Furthermore, the potential of the storage electrode 610 of the PD 600 is returned to the power supply potential V DD At the same time, the potential of the reset line RST1 is returned to 0 V. By such a reset operation, the charges accumulated in the photoelectric conversion films 504 and 604 of the PDs 500 and 600 can be reset.

[0091] Next, in this embodiment, as shown in the center of Fig. 8, exposure, that is, an exposure operation in which charges are accumulated by photoelectric conversion in the photoelectric conversion films 504, 604 of the PDs 500, 600 is performed. In this exposure operation, the potentials of the selection line SEL1 and the reset line RST1 are maintained at 0V. Meanwhile, the potentials of the storage electrodes 510 of the PDs 500 and 610 of the PDs 600 are set to the power supply potential V DDBy such an exposure operation, charges are accumulated in the photoelectric conversion films 504 and 604 of the PDs 500 and 600 as if they are attracted to the storage electrodes 510 and 610.

[0092] 8, the charge stored in the photoelectric conversion films 504 and 604 of the PDs 500 and 600 is read out. In the readout operation, the potential of the selection line SEL1 is set to the power supply potential V DD Then, the potential of the reset line RST1 is changed from 0 V to the power supply potential V DD Then, after a predetermined time has elapsed, the voltage is switched back to 0 V. In this way, the charge stored in the floating diffusion section 314 is reset. Next, the potential of the storage electrode 510 of the PD 500 is switched to the power supply potential V DD to 0V, and after a certain time has elapsed, the power supply potential V DD In this way, the charge accumulated in the photoelectric conversion film 504 is attracted to the storage electrode 510 and transferred to the floating diffusion section 314 via the readout electrode 508. The charge transferred to the floating diffusion section 314 is then further transferred to the amplifying transistor TR1. amp The signal is converted into a voltage by the digital converter 20 and read out as a pixel signal.

[0093] Next, change the potential of the reset line RST1 from 0V to the power supply potential V DD Then, after a predetermined time has elapsed, the voltage is switched back to 0 V. In this way, the charge stored in the floating diffusion section 314 is reset. Then, the potential of the storage electrode 610 of the PD 600 is switched to the power supply potential V DD to 0V, and after a certain time has elapsed, the power supply potential V DDIn this way, the charge accumulated in the photoelectric conversion film 604 is attracted to the storage electrode 610 and transferred to the floating diffusion section 314 via the readout electrode 608. In this way, the charge accumulated in the photoelectric conversion film 604 of the PD 600 is read out. The charge transferred to the floating diffusion section 314 is then further transferred to the amplifying transistor TR1. amp The signal is converted into a voltage by the digital converter 20 and read out as a pixel signal.

[0094] In this manner, a series of operations such as the reset operation, exposure operation, and read operation are completed. That is, in the read method according to this embodiment, the electric charges stored in the photoelectric conversion films 504, 604 can be sequentially transferred to the read electrodes 508, 608 with a time difference by controlling the electric potentials applied to the storage electrodes 510, 610. Furthermore, in this embodiment, the electric charges sequentially transferred to the read electrodes 508, 608 can be sequentially stored in the floating diffusion section 314 and sequentially read out.

[0095] As described above, in this embodiment, by performing the above-mentioned operation, it is possible to temporarily store charges in the photoelectric conversion films 504, 604 of the PDs 500, 600. In this embodiment, by performing the above-mentioned operation, the charges stored in the photoelectric conversion films 504, 604 can be transferred sequentially to the read electrodes 508, 608 with a time difference, and can be stored sequentially in the floating diffusion section 314 with a time difference. Therefore, according to this embodiment, since the charges can be transferred sequentially with a time difference, one floating diffusion section 314 and one through electrode 460 can be shared in different PDs 500, 600.

[0096] As a result, in this embodiment, different PDs 500 and 600 can share one floating diffusion section 314 and one through electrode 460. Therefore, according to this embodiment, it is possible to avoid an increase in the processing area of ​​the semiconductor substrate 300 due to the formation of the through electrode 460, and to avoid a reduction in the incident surface of the PD 400, so that the amount of light incident on the PD 400 does not decrease, and it is possible to avoid a decrease in the sensitivity characteristics of the PD 400. Furthermore, according to this embodiment, different PDs 500 and 600 share the floating diffusion section 314 and the through electrode 460, so that it is possible to avoid an increase in the area of ​​the chip on which the solid-state imaging device 1 is mounted. As a result, according to this embodiment, it is possible to avoid an increase in the manufacturing cost of the solid-state imaging device 1. In addition, according to this embodiment, different PDs 500 and 600 share the through electrode 460, so that it is possible to reduce the number of through electrodes 460 penetrating the semiconductor substrate 300. As a result, according to this embodiment, it is possible to avoid a deterioration in the dark current characteristics of the solid-state imaging device 1 caused by a decrease in the crystallinity of the semiconductor substrate 300.

[0097] <<3. Second embodiment>> In the first embodiment described above, the solid-state imaging element 100 is a solid-state imaging element in which blue light is photoelectrically converted by the photoelectric conversion film 604 formed above the semiconductor substrate 300, green light is photoelectrically converted by the photoelectric conversion film 504 provided below the PD 600, and red light is photoelectrically converted by the PD 400 provided in the semiconductor substrate 300. However, the embodiment of the present disclosure is not limited to such a configuration, and may be a solid-state imaging element 100a in which blue light, green light, and red light are photoelectrically converted by three photoelectric conversion films stacked on the semiconductor substrate 300. Therefore, with reference to FIG. 9, a stacked structure of a solid-state imaging element 100a having three photoelectric conversion films 504, 604, and 704 stacked on the semiconductor substrate 300 will be described as a second embodiment of the present disclosure. Figure 9 is a cross-sectional view of the pixel array section 10a of this embodiment. In detail, the pixel array section 10a includes solid-state imaging elements 100a having three photoelectric conversion films 504, 604, 704 stacked on a semiconductor substrate 300, arranged in a matrix.

[0098] 9, the solid-state imaging device 100a according to this embodiment has the same configuration as that of the above-described first embodiment from the wiring layer 200 to the PD 600, except that the PD 400 is not provided in the semiconductor substrate 300. Therefore, the detailed configuration from the wiring layer 200 to the PD 600 will not be described here.

[0099] 9, a wiring layer (third wiring layer) 720 including an insulating film 740 made of, for example, SiO2 or the like that can transmit light and a wiring (third wiring) 730 made of, for example, W is provided between the PD600 and the PD700 (third photoelectric conversion unit) as shown in FIG. 9. A read electrode 708 of the PD700, which will be described later, is electrically connected to a through electrode (second through electrode) 660, which will be described later, via the wiring 730.

[0100] In this embodiment, as shown in FIG. 9, the through electrode 660 is provided so as to penetrate a part of the wiring layer 720 and the PD600 from the wiring 730 to the read electrode 608 of the PD600. In detail, the read electrode 708 of the PD700 is electrically connected to the read electrode 608 of the PD600 through the through electrode 660. Furthermore, the read electrode 708 of the PD700 is electrically connected to the floating diffusion section 314 provided in the semiconductor substrate 300 through the through electrodes 460, 560, and 660. Therefore, the floating diffusion section 314 can temporarily store the charge generated by the photoelectric conversion in the PD700 through the through electrodes 460, 560, and 660. Furthermore, the through electrode 660 can electrically connect the read electrode 708 of the PD700 to the pixel transistor provided in the semiconductor substrate 300 through the through electrodes 560 and 460. In this embodiment, the through electrode 660 may penetrate a part of the wiring layer 720 and the PD 600, or may penetrate only the PD 600, and is not particularly limited.

[0101] In this embodiment, the through electrode 660 can be formed of a metal film such as Cu, similar to the through electrode 560 described above. An insulating film 662 made of SiO2 or the like may be provided around the outer periphery of the through electrode 660 to prevent a short circuit between the through electrode 660 and the PD 600, similar to the through electrode 560 described above. Since the through electrode 660 is similar to the through electrode 560 described above, a detailed description thereof will be omitted here.

[0102] Furthermore, in this embodiment, a PD700 (third photoelectric conversion unit) that converts light into electric charges is provided on the wiring layer 720. In detail, as in the above-mentioned PD500 and 600, the PD700 includes a common electrode (upper electrode) 702, a photoelectric conversion film 704, an insulating film 706, a readout electrode (lower electrode) 708, and a storage electrode 710, which are sequentially laminated. Note that the common electrode 702, the photoelectric conversion film 704, the insulating film 706, the readout electrode 708, and the storage electrode 710 are similar to those of the above-mentioned PD500 and 600, and therefore detailed description thereof will be omitted here.

[0103] 9, the readout electrode 708 is electrically connected to the through electrode 560 via the through electrode 660. The common electrode 702 is electrically connected to a wiring 770 that applies a desired potential to the common electrode 702. Furthermore, the storage electrode 710 is electrically connected to a wiring 772 that applies a desired potential to the storage electrode 710.

[0104] The solid-state imaging element 100a of this embodiment can perform photoelectric conversion on, for example, blue light in a photoelectric conversion film 704 (PD700) formed above the semiconductor substrate 300, on green light in a photoelectric conversion film 604 (PD600) provided below the PD700, and on red light in a photoelectric conversion film 504 (PD500) provided below the PD600.

[0105] When the photoelectric conversion film 504 is caused to function as a photoelectric conversion film that detects red light, the photoelectric conversion film 504 can contain, for example, a phthalocyanine dye, a subphthalocyanine dye (subphthalocyanine derivative), or the like.

[0106] According to this embodiment, even in a solid-state imaging element 100a having three photoelectric conversion films 504, 604, 704 stacked on a semiconductor substrate 300, it is possible to avoid deterioration of characteristics while avoiding an increase in manufacturing costs, as in the first embodiment.

[0107] In detail, also in this embodiment, by performing an operation similar to the readout method of the solid-state imaging device 100 of the above-mentioned first embodiment, it is possible to temporarily store charges in the photoelectric conversion films 504, 604, 704 of each of the PDs 500, 600, 700 by the storage electrodes 510, 610, 710. Therefore, according to this embodiment, the floating diffusion portion 314 and the through electrode 460 can be shared among the different PDs 500, 600, 700.

[0108] As a result, in this embodiment as well, the increase in the processing area of ​​the semiconductor substrate 300 due to the formation of the through electrode 460 can be avoided, and the reduction in the incidence surface of the PD 400 can be avoided, so that the deterioration of the sensitivity characteristics of the PD 400 can be avoided. Furthermore, according to this embodiment, the different PDs 500, 600, and 700 share the floating diffusion section 314 and the through electrode 460, so that the increase in the area of ​​the chip on which the solid-state imaging device 1 is mounted can be avoided, and thus the increase in manufacturing costs can be avoided. In addition, according to this embodiment, the different PDs 500, 600, and 700 share the through electrode 460, so that the number of through electrodes 460 penetrating the semiconductor substrate 300 can be reduced. As a result, according to this embodiment as well, the deterioration of the dark current characteristics of the solid-state imaging device 1 caused by the deterioration of the crystallinity of the semiconductor substrate 300 can be avoided.

[0109] In addition, this embodiment is not limited to a solid-state imaging element 100a having three photoelectric conversion films 504, 604, 704 stacked on a semiconductor substrate 300, but may be, for example, a solid-state imaging element having four or more photoelectric conversion films stacked on a semiconductor substrate 300.

[0110] <<4. Third embodiment>> Furthermore, in the embodiment of the present disclosure, the PDs 500 and 600 may have transfer electrodes 512 and 612 and shield electrodes 514 and 614. Therefore, as a third embodiment of the present disclosure, a stacked structure of a solid-state imaging device 100b including PDs 500 and 600 having transfer electrodes 512 and 612 and shield electrodes 514 and 614 will be described with reference to Fig. 10. Fig. 10 is a cross-sectional view of a pixel array section 10b according to this embodiment, and in detail, in the pixel array section 10b, solid-state imaging devices 100b including PDs 500 and 600 having transfer electrodes 512 and 612 and shield electrodes 514 and 614 are arranged in a matrix.

[0111] In detail, in this embodiment, as shown in FIG. 10, the PD 500, 600 further includes a transfer electrode 512, 612 provided between the readout electrode 508, 608 and the storage electrode 510, 610, and facing the common electrode 502, 602, the photoelectric conversion film 504, 604, and the insulating film 506, 606. The transfer electrode 512, 612 is provided between the readout electrode 508, 608 and the storage electrode 510, 610, and controls the transfer of charges. More specifically, a predetermined potential is applied to the transfer electrode 512, 612 during the accumulation period in which charges are accumulated in the photoelectric conversion film 504, 604, and the charge accumulated by being attracted to the storage electrode 510, 510 can be blocked. Furthermore, the transfer electrode 512, 612 is in an open state during the transfer period in which charges are transferred, and the accumulated charge can be easily transferred to the readout electrode 508, 608.

[0112] 10, the PDs 500, 600 of each solid-state imaging element 100b may further include shield electrodes 514, 614 provided between adjacent solid-state imaging elements 100b when the pixel array unit 10b is viewed from above. The shield electrodes 514, 614 are maintained at a predetermined potential, for example, and can suppress leakage of electric charges from or to adjacent solid-state imaging elements 100b.

[0113] The transfer electrodes 512, 612 and the shield electrodes 514, 614 can be formed from the same materials as the readout electrodes 508, 608 and the storage electrodes 510, 610. Furthermore, the transfer electrodes 512, 612 and the shield electrodes 514, 614 can be formed simultaneously with the readout electrodes 508, 608 and the storage electrodes 510, 610.

[0114] As described above, according to this embodiment, the PDs 500 and 600 each have the transfer electrodes 512 and 612 and the shield electrodes 514 and 614, and therefore the characteristics of the PDs 500 and 600 can be further improved.

[0115] <<5. Fourth embodiment>> In the above-described first embodiment, the solid-state imaging device 100 has a through electrode 560 provided so as to penetrate a part of the wiring layer 620 and the PD500 from the wiring 630 to the readout electrode 508 of the PD500. In the first embodiment, the readout electrode 608 of the PD600 is electrically connected to the readout electrode 508 of the PD500 by the through electrode 560. However, in the embodiment of the present disclosure, the through electrode electrically connecting the readout electrode 608 to the readout electrode 508 is not limited to the through electrode provided so as to penetrate the PD500. For example, the through electrode electrically connecting the readout electrode 608 to the readout electrode 508 may be a through electrode 760 provided in the outer peripheral portion 50 located on the outer periphery of the pixel array portion 10. Therefore, with reference to FIG. 11, a through electrode (third through electrode) 760 provided in the outer peripheral portion 50 will be described as a fourth embodiment of the present disclosure. Figure 11 is a cross-sectional view of the pixel array section 10c and the peripheral section 50 in this embodiment, and in detail, the peripheral section 50 is located on the outer periphery surrounding the pixel array section (pixel region) 10c in which multiple solid-state imaging elements 100c are arranged.

[0116] In detail, in this embodiment, as shown in FIG. 11, the through electrode 760 is provided in the outer peripheral portion 50 so as to penetrate a part of the wiring layers 620 and 520 from the wiring 630a electrically connected to the wiring 630 of the wiring layer 620 by a wiring (not shown) to the electrode 530a electrically connected to the read electrode 508 of the PD500 by a wiring (not shown). In this embodiment, too, it is preferable that an insulating film 762 is provided on the outer periphery of the through electrode 760. The through electrode 760 electrically connects the read electrode 608 of the PD600 to the read electrode 508 of the PD500, and can further be electrically connected to the through electrode 460. Note that the through electrode 760 according to this embodiment is similar to the through electrode 560 described above, and therefore a detailed description thereof will be omitted here.

[0117] In this embodiment, since the through electrode 760 does not penetrate the PD 500, it is possible to further prevent deterioration of the photoelectric conversion film 504 of the PD 500 caused by the formation of the through electrode 760. As a result, according to this embodiment, it is possible to further prevent deterioration of the characteristics of the photoelectric conversion film 504 of the PD 500.

[0118] <<6. Fifth embodiment>> The solid-state imaging device 1 according to the embodiment of the present disclosure described above is applicable to imaging devices such as digital still cameras and video cameras, portable terminal devices having an imaging function, copiers using a solid-state imaging element in an image reading section, and other electronic devices using an imaging device in an image capture section. Furthermore, the embodiment of the present disclosure is also applicable to robots, drones, automobiles, medical equipment (endoscopes), and the like, including the above-mentioned solid-state imaging device 1. The solid-state imaging device 1 according to the present embodiment may be in the form of a one-chip, or may be in the form of a module having an imaging function in which an imaging section and a signal processing section or an optical system are packaged together. Hereinafter, an example of an electronic device 900 including an imaging device 902 having the above-mentioned solid-state imaging device 1 will be described as a fifth embodiment of the present disclosure with reference to FIG. 12. FIG. 12 is an explanatory diagram showing an example of the electronic device 900 according to the present embodiment.

[0119] As shown in FIG. 12, the electronic device 900 includes an imaging device 902, an optical lens 910, a shutter mechanism 912, a drive circuit unit 914, and a signal processing circuit unit 916. The optical lens 910 focuses image light (incident light) from a subject on the imaging surface of the imaging device 902. As a result, signal charges are accumulated in the solid-state imaging element 100 of the imaging device 902 for a certain period of time. The shutter mechanism 912 controls the light irradiation period and light blocking period of the imaging device 902 by opening and closing. The drive circuit unit 914 supplies drive signals to the imaging device 902 for controlling the signal transfer operation and the shutter operation of the shutter mechanism 912. That is, the imaging device 902 transfers signals based on the drive signals (timing signals) supplied from the drive circuit unit 914. The signal processing circuit unit 916 performs various signal processes. For example, the signal processing circuit unit 916 outputs the processed video signal to a storage medium such as a memory (not shown), or to a display unit (not shown).

[0120] <<7. Sixth embodiment>> In the above-described embodiment of the present disclosure, the solid-state imaging device 1 is miniaturized by stacking a plurality of photoelectric conversion elements 400, 500, and 600 (see, for example, FIG. 2). However, in such a structure, since a plurality of photoelectric conversion elements 400, 500, and 600 are stacked, the solid-state imaging device 1 becomes taller (thicker) in the stacking direction. As a result, in such a structure, it may be difficult for the photoelectric conversion elements 500 and 400 located below to sufficiently capture the light that has passed through the photoelectric conversion element 600 located above. In addition, in such a structure, crosstalk to adjacent solid-state imaging elements (pixels) 100 due to obliquely incident light may easily occur due to the height in the stacking direction.

[0121] Therefore, in the following, as a sixth embodiment of the present disclosure, a structure capable of highly efficiently collecting light transmitted through the photoelectric conversion element 600 located above on the photoelectric conversion elements 500 and 400 located below is proposed. In detail, in the present embodiment described below, a light collecting element (specifically, a waveguide, an inner lens, a partition wall, etc.) for collecting light is provided between the multiple photoelectric conversion elements 400, 500, and 600 in the stacking direction. According to this embodiment, by providing such a light collecting element between the multiple photoelectric conversion elements 400, 500, and 600, it becomes possible to collect light with high efficiency on the photoelectric conversion elements 500 and 400 located below. As a result, according to this embodiment, the sensitivity characteristic of the solid-state imaging device 1 can be improved, and further the occurrence of the above-mentioned crosstalk can be suppressed. Hereinafter, the details of this embodiment will be described in order.

[0122] First, one of the structural examples of this embodiment will be described with reference to FIG. 14. FIG. 14 is a cross-sectional view of a pixel array unit 10d according to this embodiment. Specifically, in this embodiment, as shown in FIG. 14, a waveguide 404a is provided as the light collecting element in an insulating film 540 made of SiO2 or the like and capable of transmitting light on an anti-reflection film 402. Furthermore, in this embodiment, a waveguide 404b is also provided as the light collecting element in an insulating film 640 on a photoelectric conversion element 500. That is, in this embodiment, the waveguides 404a and 404b capable of collecting light on the photoelectric conversion elements 500 and 400 located below are provided between the photoelectric conversion elements 400, 500, and 600 in the stacking direction of the solid-state imaging element 100. The waveguides 404a and 404b are preferably formed using, for example, Si3N4 (refractive index: about 1.9). In this case, the insulating films 540 and 640 are formed using SiO2 (refractive index: about 1.4), so that the difference in refractive index allows light to be focused on the waveguides 404a and 404b. In this embodiment, the materials of the waveguides 404a and 404b and the insulating films 540 and 640 are not particularly limited. However, in this embodiment, it is preferable that the difference in refractive index between the material of the waveguides 404a and 404b and the material of the insulating films 540 and 640 is about 0.2 or more, and this can further improve the light-focusing efficiency of the waveguides 404a and 404b. Furthermore, the structural example shown in FIG. 14 can be formed using various semiconductor process techniques.

[0123] As described above, according to this embodiment, by providing the above-mentioned waveguides 404a, 404b between the multiple photoelectric conversion elements 400, 500, 600, it becomes possible to collect light with high efficiency on the photoelectric conversion elements 500, 400 located below. As a result, according to this embodiment, it is possible to improve the sensitivity characteristics of the solid-state imaging device 1, and further to suppress the occurrence of crosstalk as described above.

[0124] This embodiment may be modified as shown in FIG. 15. Next, a first modified example of the structure of this embodiment will be described with reference to FIG. 15. FIG. 15 is a cross-sectional view of a pixel array unit 10e according to the first modified example of this embodiment. Specifically, in this first modified example, instead of the above-mentioned waveguides 404a and 404b, inner lenses 406a and 406b capable of focusing light on the photoelectric conversion elements 500 and 400 located below are provided. The inner lenses 406a and 406b are preferably formed of a material having a higher refractive index than the material of the insulating films 540 and 640, which has a refractive index of about 1.4 to 1.6, and more preferably formed of a material having a refractive index of 1.8 or more. The material of the inner lenses 406a and 406b is a coating-type high refractive index material, for example, TiO x , ZnO x Examples of the transparent metal oxide film include a siloxane resin material film containing fine particles of transparent metal oxide such as SiO2, and a SiN film, SiON film, or TiOx film formed by a CVD method.

[0125] The structure shown in FIG. 15 can be formed, for example, as follows. A high refractive index layer (not shown) made of a high refractive index material is formed on the anti-reflection film 402, and a resist for forming the inner lenses 406a and 406b is formed on the high refractive index layer. After the resist is formed, a lens pattern is formed by lithography, and a heat treatment (reflow) is performed to form a mound-shaped resist corresponding to the outer shape of the inner lenses 406a and 406b. Then, the entire surface is etched back by dry etching, and the shape of the resist is transferred to the high refractive index layer, thereby forming the inner lenses 406a and 406b. The etching gas used for the above etching can include fluorocarbon gases such as CF4 and C4F8, and oxygen gas O2.

[0126] 15, by providing the inner lenses 406a, 406b between the multiple photoelectric conversion elements 400, 500, 600, it is possible to highly efficiently focus light on the photoelectric conversion elements 500, 400 located below. As a result, according to this modification, it is possible to improve the sensitivity characteristics of the solid-state imaging device 1, and further to suppress the occurrence of crosstalk as described above.

[0127] This embodiment can also be modified as shown in FIG. 16. Next, a modified example 2 of the structure example of this embodiment will be described with reference to FIG. 16. FIG. 16 is a cross-sectional view of a pixel array unit 10f according to the modified example 2 of this embodiment. Specifically, in this modified example 2, partitions 408a, 408b are provided instead of the above-mentioned waveguides 404a, 404b. For example, when the insulating films 540, 640 are formed of SiO2 (refractive index: about 1.4), it is preferable to form the partitions 408a, 408b using Si3N4 (refractive index: about 1.9). In this modified example, the material of the partitions 408a, 408b is not particularly limited, but it is preferable that the difference in refractive index between the material of the partitions 408a, 408b and the material of the insulating films 540, 640 is about 0.2 or more, and this can further improve the light collection efficiency. Furthermore, the partition walls 408a and 408b may be made of a metal material (such as Al, W, Ti, TiN, TiAl (titanium-aluminum), Cu, Ta (tantalum), TaN, Co, Ru, or a material containing these elements).

[0128] 16, by providing such partitions 408a, 408b between the multiple photoelectric conversion elements 400, 500, 600, light can be highly efficiently focused on the underlying photoelectric conversion elements 500, 400. As a result, according to this modification, the sensitivity characteristics of the solid-state imaging device 1 can be improved, and further the occurrence of the above-mentioned crosstalk can be suppressed.

[0129] Furthermore, in the present disclosure, it is also possible to appropriately combine and implement the above-described embodiment and modified examples 1 and 2. In addition, in the present embodiment, the positions at which the waveguides 404a and 404b, the inner lenses 406a and 406b, and the partitions 408a and 408b are provided are not limited to the above-described positions, and may be provided at other positions, and are not particularly limited.

[0130] <<8. Seventh embodiment>> In the above-described embodiment of the present disclosure, a plurality of photoelectric conversion elements 500, 600 are stacked, and a through electrode 560 is provided to electrically connect these photoelectric conversion elements 500, 600. In the above-described embodiment of the present disclosure, for example, one through electrode 560 is shared between these photoelectric conversion elements 500, 600, thereby reducing the processing area and increasing the area of ​​the pixel transistor. However, in the above-described embodiment of the present disclosure, as can be seen from FIG. 2, it is difficult to avoid the size of the read electrode 508 becoming large in order to ensure the electrical connection between the through electrode 560 connected to the photoelectric conversion element 600 and the photoelectric conversion element 500 (specifically, the photoelectric conversion film 504 exposed from the opening). As a result, in the above-described embodiment of the present disclosure, it may be difficult to avoid the size of the incident surface through which light is incident on the photoelectric conversion elements 500, 400 becoming small due to the increase in the size of the read electrode 508.

[0131] Therefore, the seventh embodiment of the present disclosure, which makes it possible to avoid a reduction in the size of the incident surface through which light is incident on the photoelectric conversion elements 500 and 400, will be described below. In the embodiment described below, a structure is proposed in which a transparent conductive layer 480 electrically connected to the photoelectric conversion element 500 (specifically, the photoelectric conversion film 504) is provided, and a through electrode 560a connected to the photoelectric conversion element 600 (specifically, the photoelectric conversion film 604) is electrically connected to the transparent conductive layer 480. Furthermore, in this embodiment, a structure is proposed in which the through electrode 560a is electrically connected to the through electrode 460a penetrating the semiconductor substrate 300 via the transparent conductive layer 480 (see FIG. 17). According to such a structure, the electrical connection between the photoelectric conversion elements 500 and 600 can be ensured via the through electrode 560a and the transparent conductive layer 480. Furthermore, according to this structure, when the pixel array unit 10g is viewed from above, the through electrode 560a and the through electrode 460a can be arranged at the same position, that is, so that these through electrodes 560a, 460a are overlapped. Therefore, since an opening exposing the surface of the photoelectric conversion film 504 for ensuring the electrical connection can be eliminated, it is possible to avoid an increase in the size of the read electrode 508 or to eliminate the need for the read electrode 508 itself. As a result, according to this embodiment, it is possible to avoid an increase in the size of the read electrode 508 or to eliminate the need for the read electrode 508, so that it is possible to avoid a reduction in the incidence surface. Details of this embodiment will be described below in order.

[0132] First, one of the structural examples of this embodiment will be described with reference to FIG. 17. FIG. 17 is a cross-sectional view of the pixel array unit 10g according to this embodiment, and for ease of understanding, only the essential parts of this embodiment are shown. In detail, in this embodiment, as shown in FIG. 17, a transparent conductive layer 580 electrically connected to the photoelectric conversion film 604 of the photoelectric conversion element 600 is provided below the photoelectric conversion film 604. The transparent conductive layer 580 is electrically connected to the through electrode 560a penetrating the insulating film 640 and the photoelectric conversion film 504 of the photoelectric conversion element 500 via the read electrode 608. In addition, in this embodiment, a transparent conductive layer 480 electrically connected to the photoelectric conversion film 504 is provided below the photoelectric conversion film 504. The transparent conductive layer 480 is electrically connected to the through electrode 460a penetrating the semiconductor substrate 300. Furthermore, the above-mentioned through electrode 560a is electrically connected to the through electrode 460a via the transparent conductive layer 480. In addition, in this embodiment, when the pixel array unit 10g is viewed from above, the through-electrodes 560a and 460a are arranged at the same position, that is, so that these through-electrodes 560a and 460a overlap.

[0133] In this embodiment, the transparent conductive layers 480, 580 can be formed from oxide semiconductor materials such as IGZO (indium-gallium-zinc oxide) and organic semiconductor materials. In addition to IGZO, other oxide semiconductor materials include ZTO (zinc-tin oxide), IGZTO (indium-gallium-zinc-tin oxide), GTO (gallium-tin oxide), and IGO (indium-gallium oxide). In this embodiment, it is preferable to select IGZO from the viewpoint of characteristics and ease of fabrication. It is preferable that the connection region of the transparent conductive layer 480 with the through electrode 560a has low resistance. Therefore, in this embodiment, for example, when an opening is provided in the transparent conductive layer 480 to electrically connect with the through electrode 560a, it is preferable to perform hydrogen plasma treatment on the surface of the transparent conductive layer 480 exposed from the opening after the opening.

[0134] In this embodiment, examples of the metal material used for the through electrode 560a include W, TiN / W, Co, CoWB (cobalt-tungsten-boron), and CoBP (cobalt-boron-phosphorus).

[0135] Next, a layout configuration in the present embodiment in which the through electrodes 460a, 560a are shared by two pixels (solid-state imaging element) 100 (two-pixel sharing) will be described with reference to Figs. 18 and 19. Fig. 18 is a cross-sectional view of the solid-state imaging element 100 cut along line CC' in Fig. 17 in the two-pixel sharing configuration, and Fig. 19 is a cross-sectional view of the solid-state imaging element 100 cut along line DD' in Fig. 17 in the two-pixel sharing configuration. In detail, as shown in Fig. 18, in this embodiment, the read electrode 608 is provided with an exposed region 608a that is exposed from an opening 606a provided in the insulating film 606 and is in contact with the photoelectric conversion film 604 via the transparent conductive layer 580. Furthermore, in this embodiment, a contact region 608b that is electrically connected to the through electrode 560a is provided in a part of the exposed region 608a. As shown in FIG. 19, in this embodiment, a contact region 508b is provided between the two storage electrodes 510, and is electrically connected to the through-electrode 460a via a transparent conductive layer 480. As shown in FIG.

[0136] Next, a layout configuration in the present embodiment in which the through electrodes 460a, 560a are shared by four pixels 100 (four-pixel sharing) will be described with reference to Figs. 20 and 21. Fig. 20 is a perspective cross-sectional view of the solid-state imaging device 100 cut along line CC' in Fig. 17 in the four-pixel sharing configuration, and Fig. 21 is a perspective cross-sectional view of the solid-state imaging device 100 cut along line DD' in Fig. 17 in the four-pixel sharing configuration. As shown in Fig. 20, in this embodiment, a shield pattern 690 is provided so as to surround the storage electrodes 610 of the four pixels 100, and further, a readout electrode 608 is provided at the center of the four storage electrodes 610 so as to divide the storage electrodes 610 into two groups. In this embodiment, a through electrode 560a extending downward is provided below the center of the readout electrode 608 as shown in Fig. 20. 21, a shield pattern 590 is provided to surround the storage electrodes 510 of the four pixels 100, and a through electrode 460a extending downward is provided below the center surrounded by the four storage electrodes 510. In this embodiment, as shown in Fig. 20 and Fig. 21, the through electrode 560a and the through electrode 460a are arranged to overlap when the pixel array unit 10g is viewed from above.

[0137] Note that the layout configurations shown in Figures 18 to 21 are one example of this embodiment, and for example, in each modified example of this embodiment described later, the layout configurations shown in Figures 18 to 21 can be appropriately modified according to each modified example.

[0138] Next, a method for manufacturing the solid-state imaging element 100 according to this embodiment will be described with reference to Fig. 22 to Fig. 28. Fig. 22 to Fig. 28 are cross-sectional views for explaining the method for manufacturing the solid-state imaging element 100 according to this embodiment, and these figures show only the main parts of this embodiment.

[0139] First, as shown in FIG. 22, an insulating film 540 is deposited on a semiconductor substrate 300 (not shown) on which an anti-reflection film 402 is formed, and a storage electrode 510 is formed on the insulating film 540. Furthermore, after the insulating film 540 is embedded between the storage electrodes 510, the surface is subjected to a CMP (Chemical Mechanical Polishing) method to perform planarization. Next, as shown in FIG. 23, a via is formed penetrating the insulating film 540 for the through electrode 460a, and a metal film (for example, a W film) 250 is deposited so as to embed the via. Then, as shown in FIG. 24, planarization is performed by the CMP method up to the surface of the storage electrode 510, and the metal film 250 protruding from the via is removed to form the through electrode 460a.

[0140] Further, an insulating film 540 is deposited on the storage electrode 510, and the deposited insulating film 540 is patterned by photolithography and dry etching to form an opening on the through electrode 460a, which exposes the through electrode 460a from the insulating film 540. Then, a transparent conductive layer 480 is deposited so as to fill the opening and cover the insulating film 540. Further, as shown in FIG. 25, a photoelectric conversion film 504, a common electrode 502, and an organic film 150 are sequentially deposited on the transparent conductive layer 480.

[0141] Next, as shown in FIG. 26, a via penetrating the common electrode 502 and the photoelectric conversion film 504 for the through electrode 560a is formed by photolithography and dry etching (more specifically, etching down to the surface of the transparent conductive layer 480), and an insulating film 640 is deposited to cover the sidewall of the via and the surface of the common electrode 502.

[0142] Then, as shown in Fig. 27, the insulating film 640 deposited at the bottom of the via is removed by dry etching, and a metal film (e.g., W film) 252 is deposited so as to fill the via. Furthermore, as shown in Fig. 28, the metal film 252 protruding from the via is removed by CMP or dry etching to form a through electrode 560a. Thereafter, a readout electrode 608, a storage electrode 610, a transparent conductive layer 580, a photoelectric conversion film 604, and a common electrode 602 are formed, thereby obtaining a pixel array section 10g as shown in Fig. 17.

[0143] As described above, according to this embodiment, it is possible to avoid an increase in the size of the read electrode 508 or to make the read electrode unnecessary, and therefore it is possible to avoid a reduction in the incidence surface.

[0144] This embodiment may be modified as shown in FIG. 29. Next, a first modification of the structure example of this embodiment will be described with reference to FIG. 29. FIG. 29 is a cross-sectional view of a main part of a pixel array section 10g according to the first modification of this embodiment. In detail, in this first modification, as shown in FIG. 29, a read electrode 508 is provided, and the through electrode 560a and the through electrode 460a are electrically connected to each other via the read electrode 508 and the transparent conductive layer 480. The structure according to the first modification shown in FIG. 29 can prevent the incidence surface from being reduced, as in the above-mentioned embodiment, and is also easy to form.

[0145] Next, a method for manufacturing the solid-state imaging element 100 according to the first modified example of this embodiment will be described with reference to Fig. 30 to Fig. 36. Fig. 30 to Fig. 36 are cross-sectional views for explaining the method for manufacturing the solid-state imaging element 100 according to the first modified example of this embodiment, and these figures show only the main parts of this embodiment.

[0146] First, as in the present embodiment, an insulating film 540 is deposited on a semiconductor substrate 300 (not shown) on which an anti-reflection film 402 is formed, and a storage electrode 510 is formed on the insulating film 540. After the insulating film 540 is deposited, a via is formed for the through electrode 460a, penetrating the insulating film 540, and a metal film is deposited so as to fill the via. Then, as shown in FIG. 30, planarization is performed by the CMP method up to the surface of the storage electrode 510, and the metal film protruding from the via is removed to form the through electrode 460a. Next, as shown in FIG. 31, a read electrode 508 and a storage electrode 510 are formed, and an insulating film 540 is deposited thereon. Furthermore, as shown in FIG. 32, planarization is performed by the CMP method until the surfaces of the read electrode 508 and the storage electrode 510 are exposed.

[0147] Further, an insulating film 540 is deposited on the readout electrode 508 and the storage electrode 510, and an opening is formed in the deposited insulating film 540 so that the surface of the readout electrode 508 on the through electrode 460a is exposed from the insulating film 540. Then, a transparent conductive layer 480 is deposited so as to fill the opening and cover the insulating film 540. Further, as shown in FIG. 33, a photoelectric conversion film 504, a common electrode 502, and an organic film 150 are sequentially deposited on the transparent conductive layer 480.

[0148] Next, as shown in FIG. 34, a via penetrating the common electrode 502 and the photoelectric conversion film 504 for the through electrode 560a is formed by photolithography and dry etching (more specifically, etching down to the surface of the transparent conductive layer 480), and an insulating film 640 is deposited to cover the sidewall of the via and the surface of the common electrode 502.

[0149] Then, as shown in Fig. 35, the insulating film 640 deposited at the bottom of the via is removed, and a metal film 254 is deposited so as to fill the via. Furthermore, as shown in Fig. 36, the metal film 254 protruding from the via is removed to form a through electrode 560a. Thereafter, a readout electrode 608, a storage electrode 610, a transparent conductive layer 580, a photoelectric conversion film 604, and a common electrode 602 are formed, thereby obtaining a pixel array section 10g as shown in Fig. 29.

[0150] This embodiment may be modified as shown in FIG. 37. Next, a modified example 2 of the structure example of this embodiment will be described with reference to FIG. 37. FIG. 37 is a cross-sectional view of a main part of a pixel array section 10g according to modified example 2 of this embodiment. In detail, in modified example 2, the through electrode 560a is electrically connected to the transparent conductive layer 480 by contacting the transparent conductive layer 480 not at the bottom surface of the through electrode 560a but at the side surface. The structure according to modified example 2 shown in FIG. 37 can prevent the incidence surface from being reduced, similar to the above-mentioned embodiment.

[0151] Next, a method for manufacturing the solid-state imaging element 100 according to Modification 2 of this embodiment will be described with reference to Fig. 38 to Fig. 41. Fig. 38 to Fig. 41 are cross-sectional views for explaining the method for manufacturing the solid-state imaging element 100 according to Modification 2 of this embodiment, and these figures show only the main parts of this embodiment. Note that the manufacturing method of Modification 2 is common to the description of Modification 1 described above with reference to Figs. 30 to 32, and therefore the description of the common parts will be omitted.

[0152] 30 to 32, in this modification, an insulating film 540, a transparent conductive layer 480, a photoelectric conversion film 504, a common electrode 502, and an organic film 150 are sequentially deposited on the readout electrode 508 and the storage electrode 510 as shown in Fig. 38. Next, as shown in Fig. 39, a via penetrating the common electrode 502 and the photoelectric conversion film 504 for the through electrode 560a is formed by photolithography and dry etching (more specifically, etching down to the surface of the transparent conductive layer 480), and an insulating film 640 is deposited so as to cover the sidewall of the via and the surface of the common electrode 502.

[0153] 40, the insulating film 640 deposited on the readout electrode 508 is removed by dry etching together with a part of the transparent conductive layer 480, and a metal film 256 is deposited so as to fill the via. Furthermore, as shown in FIG. 41, the metal film 256 protruding from the via is removed to form a through electrode 560a. Thereafter, the readout electrode 608, the storage electrode 610, the transparent conductive layer 580, the photoelectric conversion film 604, and the common electrode 602 are formed, thereby obtaining a pixel array section 10g as shown in FIG. 37.

[0154] This embodiment may be modified as shown in FIG. 42. Next, a third modification of the structure example of this embodiment will be described with reference to FIG. 42. FIG. 42 is a cross-sectional view of a main part of a pixel array unit 10g according to the third modification of this embodiment. In detail, in this modification, a read electrode 518 made of a metal film having low resistance is provided instead of the read electrode 508. Therefore, the structure according to the third modification shown in FIG. 42 can not only prevent the incidence surface from being reduced as in the above-mentioned embodiment, but also reduce the connection resistance between the through electrode 560a and the through electrode 460a.

[0155] Next, a method for manufacturing the solid-state imaging element 100 according to the third modification of this embodiment will be described with reference to Fig. 43 to Fig. 49. Fig. 43 to Fig. 49 are cross-sectional views for explaining the method for manufacturing the solid-state imaging element 100 according to the third modification of this embodiment, and these figures show only the main parts of this embodiment.

[0156] First, as in the present embodiment, an insulating film 540 is deposited on a semiconductor substrate 300 (not shown) on which an anti-reflection film 402 has been formed, and a part of a storage electrode 510 is formed on the insulating film 540. Furthermore, a via is formed for the through electrode 460a, penetrating the insulating film 540, and a metal film is deposited so as to fill the via, thereby forming the through electrode 460a. Then, as shown in FIG. 43, a read electrode 518 made of a metal film is formed on the through electrode 460a by using photolithography and dry etching.

[0157] Next, as shown in Fig. 44, an insulating film 540 is deposited, and then a storage electrode 510 is formed, and an insulating film 540 is further deposited thereon. Then, as shown in Fig. 45, a CMP method is performed to planarize the surface of the storage electrode 510 until the surface is exposed. Then, as shown in Fig. 46, an insulating film 540, a transparent conductive layer 480, a photoelectric conversion film 504, a common electrode 502, and an organic film 150 are sequentially deposited on the storage electrode 510.

[0158] Next, as shown in FIG. 47, a via penetrating the common electrode 502 and the photoelectric conversion film 504 for the through electrode 560a is formed by photolithography and dry etching (more specifically, etching down to the surface of the transparent conductive layer 480), and an insulating film 640 is deposited to cover the sidewall of the via and the surface of the common electrode 502.

[0159] Then, as shown in Fig. 48, the insulating film 640 deposited at the bottom of the via is removed together with a part of the transparent conductive layer 480, and a metal film 258 is deposited so as to fill the via. Furthermore, as shown in Fig. 49, the metal film 258 protruding from the via is removed to form a through electrode 560a. Thereafter, a readout electrode 608, a storage electrode 610, a transparent conductive layer 580, a photoelectric conversion film 604, and a common electrode 602 are formed, thereby obtaining a pixel array section 10g as shown in Fig. 42.

[0160] This embodiment may be modified as shown in FIG. 50. Next, a fourth modification of the structural example of this embodiment will be described with reference to FIG. 50. FIG. 50 is a cross-sectional view of a main part of a pixel array section 10g according to the fourth modification of this embodiment. In detail, in this modification, the lower end of the through electrode 560a is narrowed, and the lower end is electrically connected to the through electrode 460a via the read electrode 508. The structure according to the fourth modification shown in FIG. 50 can prevent the incidence surface from being reduced, similarly to the above-mentioned embodiment.

[0161] Next, a method for manufacturing the solid-state imaging element 100 according to Modification 4 of this embodiment will be described with reference to Fig. 51 to Fig. 56. Fig. 51 to Fig. 56 are cross-sectional views for explaining the method for manufacturing the solid-state imaging element 100 according to Modification 4 of this embodiment, and these figures show only the main parts of this embodiment. Note that the manufacturing method of Modification 4 is common to the description of Modification 1 described above with reference to Figs. 30 to 32 and Modification 2 with reference to Fig. 38, and therefore a description of the common parts will be omitted.

[0162] In this modified example, after the processes shown in Figures 30 to 32 and the process shown in Figure 38, as shown in Figure 51, a via penetrating the common electrode 502 and the photoelectric conversion film 504 for the through electrode 560a is formed by photolithography and dry etching (more specifically, etching down to the surface of the transparent conductive layer 480).

[0163] Next, as shown in Fig. 52, an organic film 350 is formed on the common electrode 502 to fill the formed vias, and the surface is planarized, and a patterned photoresist 352 is formed on the planarized surface. Furthermore, as shown in Fig. 53, a via penetrating the organic film 350, the transparent conductive layer 480, and the insulating film 540 is formed by dry etching according to the patterned photoresist 352.

[0164] Next, as shown in FIG. 54, after removing the photoresist 352 and the organic film 350, an insulating film 640 is deposited so as to cover the surface of the readout electrode 508, the sidewall of the via, and the surface of the common electrode 502. Then, as shown in FIG. 55, the insulating film 640 deposited on the bottom of the via is removed by dry etching, and a metal film 260 is deposited so as to fill the via. Furthermore, as shown in FIG. 56, the metal film 260 protruding from the via is removed to form a through electrode 560a. Thereafter, the readout electrode 608, the storage electrode 610, the transparent conductive layer 580, the photoelectric conversion film 604, and the common electrode 602 are formed, thereby obtaining a pixel array section 10g as shown in FIG. 50.

[0165] This embodiment may be modified as shown in FIG. 57. Next, a fifth modified example of the structure of this embodiment will be described with reference to FIG. 57. FIG. 57 is a cross-sectional view of a main part of a pixel array unit 10g according to the fifth modified example of this embodiment. In detail, in this modified example, the lower end of the through electrode 560a is narrowed, and the lower end is electrically connected to the through electrode 460a via a read electrode 518 made of a low-resistance metal film. The structure according to the fifth modified example shown in FIG. 57 can prevent the incidence surface from being reduced, as in the above-mentioned embodiment.

[0166] Next, a method for manufacturing the solid-state imaging device 100 according to Modification 5 of this embodiment will be described with reference to Fig. 58 to Fig. 61. Fig. 58 to Fig. 61 are cross-sectional views for explaining the method for manufacturing the solid-state imaging device 100 according to Modification 5 of this embodiment, and these figures show only the essential parts of this embodiment. Note that the manufacturing method of Modification 5 is common to the description of Modification 3 described above with reference to Figs. 43 to 46, and therefore the description of the common parts will be omitted.

[0167] 43 to 46, vias penetrating the common electrode 502 and the photoelectric conversion film 504 for the through-electrodes 560a are formed by photolithography and dry etching (specifically, etching to the surface of the transparent conductive layer 480). Furthermore, the formed vias are filled and an organic film 350 is formed on the common electrode 502, the surface is flattened, and a patterned photoresist 352 is formed on the flattened surface. Then, as shown in FIG. 58, a via penetrating the organic film 350, the transparent conductive layer 480, and the insulating film 540 is formed according to the patterned photoresist 352.

[0168] Next, as shown in FIG. 59, after removing the photoresist 352 and the organic film 350, an insulating film 640 is deposited so as to cover the surface of the readout electrode 518, the sidewall of the via, and the surface of the common electrode 502. Then, as shown in FIG. 60, the insulating film 640 deposited on the bottom of the via is removed by dry etching, and a metal film 262 is deposited so as to fill the via. Furthermore, as shown in FIG. 61, the metal film 262 protruding from the via is removed to form a through electrode 560a. Thereafter, a readout electrode 608, a storage electrode 610, a transparent conductive layer 580, a photoelectric conversion film 604, and a common electrode 602 are formed, thereby obtaining a pixel array section 10g as shown in FIG. 57.

[0169] <<9. Application example to endoscopic surgery system>> The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be applied to an endoscopic surgery system.

[0170] FIG. 62 is a diagram showing an example of a schematic configuration of an endoscopic surgery system to which the technology according to the present disclosure (the present technology) can be applied.

[0171] 62 shows a state in which an operator (doctor) 11131 is performing surgery on a patient 11132 on a patient bed 11133 using an endoscopic surgery system 11000. As shown in the figure, the endoscopic surgery system 11000 is composed of an endoscope 11100, other surgical tools 11110 such as an insufflation tube 11111 and an energy treatment tool 11112, a support arm device 11120 that supports the endoscope 11100, and a cart 11200 on which various devices for endoscopic surgery are mounted.

[0172] The endoscope 11100 is composed of a lens barrel 11101, a region of a predetermined length from the tip of which is inserted into a body cavity of a patient 11132, and a camera head 11102 connected to the base end of the lens barrel 11101. In the illustrated example, the endoscope 11100 is configured as a so-called rigid scope having a rigid lens barrel 11101, but the endoscope 11100 may be configured as a so-called flexible scope having a flexible lens barrel.

[0173] An opening into which an objective lens is fitted is provided at the tip of the lens barrel 11101. A light source device 11203 is connected to the endoscope 11100, and light generated by the light source device 11203 is guided to the tip of the lens barrel by a light guide extending inside the lens barrel 11101, and is irradiated via the objective lens toward an observation target in the body cavity of the patient 11132. The endoscope 11100 may be a direct-viewing endoscope, an oblique-viewing endoscope, or a side-viewing endoscope.

[0174] An optical system and an image sensor are provided inside the camera head 11102, and reflected light (observation light) from an observation target is collected on the image sensor by the optical system. The observation light is photoelectrically converted by the image sensor to generate an electrical signal corresponding to the observation light, i.e., an image signal corresponding to an observation image. The image signal is transmitted to a camera control unit (CCU) 11201 as RAW data.

[0175] The CCU 11201 is configured with a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), etc., and performs overall control of the operations of the endoscope 11100 and the display device 11202. Furthermore, the CCU 11201 receives an image signal from the camera head 11102, and performs various types of image processing on the image signal, such as development processing (demosaic processing), for displaying an image based on the image signal.

[0176] Under the control of the CCU 11201, the display device 11202 displays an image based on an image signal that has been subjected to image processing by the CCU 11201.

[0177] The light source device 11203 is composed of a light source such as an LED (Light Emitting Diode), and supplies the endoscope 11100 with irradiation light when photographing an operation site or the like.

[0178] The input device 11204 is an input interface for the endoscopic surgery system 11000. A user can input various information and instructions to the endoscopic surgery system 11000 via the input device 11204. For example, the user inputs an instruction to change the imaging conditions (type of irradiated light, magnification, focal length, etc.) of the endoscope 11100.

[0179] The treatment tool control device 11205 controls the driving of the energy treatment tool 11112 for cauterizing tissue, incising, sealing blood vessels, etc. The insufflation device 11206 sends gas into the body cavity of the patient 11132 via the insufflation tube 11111 to inflate the body cavity for the purpose of securing the field of view of the endoscope 11100 and securing the working space of the surgeon. The recorder 11207 is a device capable of recording various information related to the surgery. The printer 11208 is a device capable of printing various information related to the surgery in various formats such as text, image, or graph.

[0180] The light source device 11203 that supplies irradiation light to the endoscope 11100 when photographing the surgical site can be composed of a white light source composed of, for example, an LED, a laser light source, or a combination of these. When the white light source is composed of a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high precision, so that the white balance of the captured image can be adjusted in the light source device 11203. In this case, it is also possible to capture images corresponding to each of the RGB colors in a time-division manner by irradiating the observation object with laser light from each of the RGB laser light sources in a time-division manner and controlling the driving of the image sensor of the camera head 11102 in synchronization with the irradiation timing. According to this method, a color image can be obtained without providing a color filter to the image sensor.

[0181] The light source device 11203 may be controlled to change the intensity of the light it outputs at predetermined time intervals. The driving of the image sensor of the camera head 11102 may be controlled in synchronization with the timing of the change in the light intensity to obtain images in a time-division manner, and the images may be synthesized to generate an image with a high dynamic range that is free of so-called blackout and whiteout.

[0182] The light source device 11203 may be configured to supply light of a predetermined wavelength band corresponding to the special light observation. In the special light observation, for example, by utilizing the wavelength dependency of light absorption in body tissue, a narrow band light is irradiated compared to the irradiated light (i.e., white light) during normal observation, and a predetermined tissue such as blood vessels on the mucous membrane surface is photographed with high contrast, so-called narrow band imaging is performed. Alternatively, in the special light observation, a fluorescent observation may be performed in which an image is obtained by fluorescence generated by irradiating an excitation light. In the fluorescent observation, it is possible to irradiate an excitation light to a body tissue and observe the fluorescence from the body tissue (autofluorescence observation), or to locally inject a reagent such as indocyanine green (ICG) into the body tissue and irradiate the body tissue with excitation light corresponding to the fluorescent wavelength of the reagent to obtain a fluorescent image. The light source device 11203 may be configured to supply narrow band light and / or excitation light corresponding to such special light observation.

[0183] FIG. 63 is a block diagram showing an example of the functional configuration of the camera head 11102 and the CCU 11201 shown in FIG.

[0184] The camera head 11102 has a lens unit 11401, an imaging unit 11402, a drive unit 11403, a communication unit 11404, and a camera head control unit 11405. The CCU 11201 has a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera head 11102 and the CCU 11201 are connected to each other by a transmission cable 11400 so as to be able to communicate with each other.

[0185] The lens unit 11401 is an optical system provided at the connection portion with the lens barrel 11101. Observation light taken in from the tip of the lens barrel 11101 is guided to the camera head 11102 and enters the lens unit 11401. The lens unit 11401 is configured by combining a plurality of lenses including a zoom lens and a focus lens.

[0186] The imaging unit 11402 is composed of an imaging element. The imaging element constituting the imaging unit 11402 may be one (so-called single-plate type) or multiple (so-called multi-plate type). When the imaging unit 11402 is composed of a multi-plate type, for example, each imaging element may generate an image signal corresponding to each of RGB, and a color image may be obtained by combining the image signals. Alternatively, the imaging unit 11402 may be configured to have a pair of imaging elements for acquiring image signals for the right eye and the left eye corresponding to 3D (Dimensional) display. By performing 3D display, the surgeon 11131 can more accurately grasp the depth of the biological tissue in the surgical site. Note that when the imaging unit 11402 is composed of a multi-plate type, multiple lens units 11401 may be provided corresponding to each imaging element.

[0187] Furthermore, the imaging unit 11402 does not necessarily have to be provided in the camera head 11102. For example, the imaging unit 11402 may be provided inside the lens barrel 11101, immediately behind the objective lens.

[0188] The driving unit 11403 is configured by an actuator, and moves the zoom lens and focus lens of the lens unit 11401 by a predetermined distance along the optical axis under the control of the camera head control unit 11405. This allows the magnification and focus of the image captured by the imaging unit 11402 to be appropriately adjusted.

[0189] The communication unit 11404 is configured by a communication device for transmitting and receiving various information to and from the CCU 11201. The communication unit 11404 transmits the image signal obtained from the imaging unit 11402 to the CCU 11201 via the transmission cable 11400 as RAW data.

[0190] Furthermore, the communication unit 11404 receives a control signal for controlling the driving of the camera head 11102 from the CCU 11201, and supplies the control signal to the camera head control unit 11405. The control signal includes information on the imaging conditions, such as information specifying the frame rate of the captured image, information specifying the exposure value at the time of capturing the image, and / or information specifying the magnification and focus of the captured image.

[0191] The image capturing conditions such as the frame rate, exposure value, magnification, and focus may be appropriately specified by a user, or may be automatically set by the control unit 11413 of the CCU 11201 based on an acquired image signal. In the latter case, the endoscope 11100 is equipped with a so-called AE (Auto Exposure) function, AF (Auto Focus) function, and AWB (Auto White Balance) function.

[0192] The camera head control unit 11405 controls the driving of the camera head 11102 based on a control signal received from the CCU 11201 via the communication unit 11404.

[0193] The communication unit 11411 is configured with a communication device for transmitting and receiving various information to and from the camera head 11102. The communication unit 11411 receives an image signal transmitted from the camera head 11102 via the transmission cable 11400.

[0194] Furthermore, the communication unit 11411 transmits, to the camera head 11102, a control signal for controlling the driving of the camera head 11102. The image signal and the control signal can be transmitted by electrical communication, optical communication, or the like.

[0195] The image processing unit 11412 performs various types of image processing on the image signal, which is RAW data sent from the camera head 11102 .

[0196] The control unit 11413 performs various controls related to imaging of the surgical site etc. by the endoscope 11100 and display of the captured image obtained by imaging the surgical site etc. For example, the control unit 11413 generates a control signal for controlling the driving of the camera head 11102.

[0197] Further, the control unit 11413 causes the display device 11202 to display the captured image showing the surgical site, etc., based on the image signal that has been image-processed by the image processing unit 11412. At this time, the control unit 11413 may recognize various objects in the captured image using various image recognition techniques. For example, the control unit 11413 can recognize surgical tools such as forceps, specific living body parts, bleeding, mist when the energy treatment tool 11112 is used, etc., by detecting the shape and color of the edge of an object included in the captured image. When the control unit 11413 causes the display device 11202 to display the captured image, it may use the recognition result to superimpose various types of surgery support information on the image of the surgical site. By superimposing and presenting the surgery support information to the surgeon 11131, the burden on the surgeon 11131 can be reduced and the surgeon 11131 can proceed with the surgery reliably.

[0198] The transmission cable 11400 connecting the camera head 11102 and the CCU 11201 is an electrical signal cable for communication of electrical signals, an optical fiber for optical communication, or a composite cable of these.

[0199] Here, in the illustrated example, communication is performed wired using a transmission cable 11400, but communication between the camera head 11102 and the CCU 11201 may also be performed wirelessly.

[0200] An example of an endoscopic surgery system to which the technology according to the present disclosure can be applied has been described above. The technology according to the present disclosure can be applied to, for example, the endoscope 11100, the camera head 11102 (the imaging unit 11402), the CCU 11201 (the image processing unit 11412), etc., among the above-described configurations.

[0201] Although an endoscopic surgery system has been described here as an example, the technology disclosed herein may also be applied to other systems, such as a microsurgery system.

[0202] <<10. Examples of applications to moving objects>> The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be realized as a device mounted on any type of moving body such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, a personal mobility device, an airplane, a drone, a ship, a robot, etc.

[0203] FIG. 64 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a moving object control system to which the technology of the present disclosure can be applied.

[0204] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 64, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. Also, as functional configurations of the integrated control unit 12050, a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (interface) 12053 are illustrated.

[0205] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle in accordance with various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a braking force of the vehicle.

[0206] The body system control unit 12020 controls the operation of various devices mounted on the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as head lamps, back lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves or signals of various switches transmitted from a portable device that replaces a key may be input to the body system control unit 12020. The body system control unit 12020 receives the input of these radio waves or signals and controls the door lock device, power window device, lamps, and the like of the vehicle.

[0207] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, an imaging unit 12031 is connected to the outside-vehicle information detection unit 12030. The outside-vehicle information detection unit 12030 causes the imaging unit 12031 to capture an image outside the vehicle and receives the captured image. The outside-vehicle information detection unit 12030 may perform object detection processing or distance detection processing for a person, a car, an obstacle, a sign, or characters on a road surface, based on the received image.

[0208] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal according to the amount of light received. The imaging unit 12031 can output the electrical signal as an image, or as distance measurement information. The light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.

[0209] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing.

[0210] The microcomputer 12051 can calculate control target values ​​for the driving force generating device, the steering mechanism, or the braking device based on the information inside and outside the vehicle acquired by the outside-of-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output a control command to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including vehicle collision avoidance or impact mitigation, following driving based on the inter-vehicle distance, vehicle speed maintenance driving, vehicle collision warning, vehicle lane departure warning, etc.

[0211] In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on the driver's operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle acquired by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.

[0212] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the outside-vehicle information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside-vehicle information detection unit 12030, and perform cooperative control for the purpose of preventing glare, such as switching from high beams to low beams.

[0213] The audio / video output unit 12052 transmits at least one output signal of audio and video to an output device capable of visually or audibly notifying information to passengers in the vehicle or the outside of the vehicle. In the example of Fig. 64, an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are exemplified as the output device. The display unit 12062 may include at least one of an on-board display and a head-up display, for example.

[0214] FIG. 65 is a diagram showing an example of the installation position of the imaging unit 12031.

[0215] In FIG. 65, a vehicle 12100 has imaging units 12101, 12102, 12103, 12104, and 12105 as an imaging unit 12031.

[0216] The imaging units 12101, 12102, 12103, 12104, and 12105 are provided at positions such as the front nose, side mirrors, rear bumper, back door, and the upper part of the windshield inside the vehicle cabin of the vehicle 12100. The imaging unit 12101 provided at the front nose and the imaging unit 12105 provided at the upper part of the windshield inside the vehicle cabin mainly acquire images of the front of the vehicle 12100. The imaging units 12102 and 12103 provided at the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 provided at the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The images of the front acquired by the imaging units 12101 and 12105 are mainly used to detect a preceding vehicle, a pedestrian, an obstacle, a traffic light, a traffic sign, a lane, or the like.

[0217] 65 shows an example of the imaging ranges of the imaging units 12101 to 12104. Imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, respectively, and imaging range 12114 indicates the imaging range of the imaging unit 12104 provided on the rear bumper or back door. For example, an overhead image of the vehicle 12100 viewed from above is obtained by superimposing the image data captured by the imaging units 12101 to 12104.

[0218] At least one of the imaging units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera made up of a plurality of imaging elements, or may be an imaging element having pixels for detecting a phase difference.

[0219] For example, the microcomputer 12051 can extract, as a preceding vehicle, a three-dimensional object that is the closest three-dimensional object on the travel path of the vehicle 12100 and travels at a predetermined speed (for example, 0 km / h or more) in approximately the same direction as the vehicle 12100, by calculating the distance to each three-dimensional object in the imaging ranges 12111 to 12114 and the change over time of this distance (relative speed with respect to the vehicle 12100) based on the distance information obtained from the imaging units 12101 to 12104. Furthermore, the microcomputer 12051 can set a vehicle distance to be secured in advance in front of the preceding vehicle, and perform automatic brake control (including follow-up stop control) and automatic acceleration control (including follow-up start control). In this way, cooperative control can be performed for the purpose of automatic driving that travels autonomously without relying on the driver's operation.

[0220] For example, the microcomputer 12051 classifies and extracts three-dimensional object data on three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on distance information obtained from the imaging units 12101 to 12104, and can use the data for automatic obstacle avoidance. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. Then, the microcomputer 12051 determines a collision risk indicating the risk of collision with each obstacle, and when the collision risk is equal to or greater than a set value and a collision is possible, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drive system control unit 12010.

[0221] At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can recognize a pedestrian by determining whether or not a pedestrian is present in the captured images of the imaging units 12101 to 12104. The recognition of such a pedestrian is performed, for example, by a procedure of extracting feature points in the captured images of the imaging units 12101 to 12104 as infrared cameras, and a procedure of performing pattern matching processing on a series of feature points that indicate the contour of an object to determine whether or not the object is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the captured images of the imaging units 12101 to 12104 and recognizes the pedestrian, the audio / image output unit 12052 controls the display unit 12062 to superimpose a rectangular contour line for emphasis on the recognized pedestrian. The audio / image output unit 12052 may also control the display unit 12062 to display an icon or the like indicating a pedestrian at a desired position.

[0222] The above describes an example of a vehicle control system to which the technology according to the present disclosure can be applied. The technology according to the present disclosure can be applied to, for example, the imaging unit 12031 and the like of the above-described configuration.

[0223] <<11. Summary>> As described above, according to each embodiment of the present disclosure, it is possible to provide a solid-state imaging element 100, a solid-state imaging device 1, and a readout method for the solid-state imaging element 100 that can avoid an increase in manufacturing costs while avoiding deterioration of characteristics.

[0224] In the above-mentioned embodiments of the present disclosure, the solid-state imaging device 100 is described in which the first conductivity type is P type, the second conductivity type is N type, and electrons are used as signal charges, but the embodiments of the present disclosure are not limited to such examples. For example, each embodiment can be applied to a solid-state imaging device 100 in which the first conductivity type is N type, the second conductivity type is P type, and holes are used as signal charges.

[0225] In each of the above-described embodiments of the present disclosure, the semiconductor substrate 300 does not necessarily have to be a silicon substrate, and may be another substrate (for example, an SOI (Silicon On Insulator) substrate, a SiGe substrate, etc.). The semiconductor substrate 300 may be such a substrate on which a semiconductor structure or the like is formed.

[0226] Furthermore, the solid-state imaging element 100 according to each embodiment of the present disclosure is not limited to a solid-state imaging element that detects the distribution of the amount of incident visible light and captures it as an image. For example, this embodiment can be applied to a solid-state imaging element that captures the distribution of the amount of incident infrared rays, X-rays, particles, etc. as an image, or a solid-state imaging element (physical quantity distribution detection device) such as a fingerprint detection sensor that detects the distribution of other physical quantities such as pressure and capacitance and captures them as an image.

[0227] Moreover, the solid-state imaging element 100 according to each embodiment of the present disclosure can be manufactured by using a method, an apparatus, and conditions used in the manufacture of a general semiconductor device. That is, the solid-state imaging element 100 according to each embodiment can be manufactured by using an existing manufacturing process for a semiconductor device.

[0228] Examples of the above-mentioned methods include PVD, CVD, and ALD. Examples of the PVD methods include vacuum deposition, EB (electron beam) deposition, various sputtering methods (magnetron sputtering, RF-DC combined bias sputtering, ECR (Electron Cyclotron Resonance) sputtering, facing target sputtering, high frequency sputtering, etc.), ion plating, laser ablation, molecular beam epitaxy (MBE), and laser transfer. Examples of the CVD methods include plasma CVD, thermal CVD, metal organic (MO) CVD, and photo CVD. Further, other methods include electrolytic plating, electroless plating, spin coating, immersion, casting, microcontact printing, drop casting, various printing methods such as screen printing, inkjet printing, offset printing, gravure printing, and flexographic printing, stamping, spraying, and various coating methods such as air doctor coater, blade coater, rod coater, knife coater, squeeze coater, reverse roll coater, transfer roll coater, gravure coater, kiss coater, cast coater, spray coater, slit orifice coater, and calendar coater. Further, patterning methods include chemical etching such as shadow mask, laser transfer, and photolithography, and physical etching using ultraviolet light, laser, and the like. In addition, planarization techniques include CMP, laser planarization, and reflow.

[0229] <<12. Supplementary Information>> Although the preferred embodiment of the present disclosure has been described in detail above with reference to the attached drawings, the technical scope of the present disclosure is not limited to such examples. It is clear that a person having ordinary knowledge in the technical field of the present disclosure can conceive of various modified or amended examples within the scope of the technical ideas described in the claims, and it is understood that these also naturally belong to the technical scope of the present disclosure.

[0230] In addition, the effects described in this specification are merely descriptive or exemplary and are not limiting. In other words, the technology according to the present disclosure may achieve other effects that are apparent to a person skilled in the art from the description of this specification, in addition to or in place of the above effects.

[0231] Note that the following configurations also fall within the technical scope of the present disclosure. (1) A semiconductor substrate; a first photoelectric conversion unit provided above the semiconductor substrate and configured to convert light into electric charges; A second photoelectric conversion unit that is provided above the first photoelectric conversion unit and converts light into electric charges; Equipped with Each of the first and second photoelectric conversion units is An upper electrode; A lower electrode; a photoelectric conversion film sandwiched between the upper electrode and the lower electrode; a storage electrode facing the upper electrode with the photoelectric conversion film and an insulating film interposed therebetween; The laminate structure includes The lower electrodes of the first and second photoelectric conversion units each include the first and second photoelectric conversion units are electrically connected to a common charge storage unit provided in the semiconductor substrate in common to the first and second photoelectric conversion units through a common through electrode that penetrates the semiconductor substrate and is provided in common to the first and second photoelectric conversion units; Solid-state imaging element. (2) A solid-state imaging element as described in (1) above, wherein each of the lower electrodes of the first and second photoelectric conversion units is electrically connected to a common pixel transistor provided in common to the first and second photoelectric conversion units in the semiconductor substrate via the common through electrode. (3) a first wiring layer sandwiched between the semiconductor substrate and the first photoelectric conversion unit; A solid-state imaging element as described in (1) or (2) above, wherein each of the lower electrodes of the first and second photoelectric conversion units is electrically connected to the common through electrode via a first wiring included in the first wiring layer. (4) the lower electrode of the second photoelectric conversion unit is electrically connected to the lower electrode of the first photoelectric conversion unit via a first through electrode that penetrates the first photoelectric conversion unit. The solid-state imaging device according to any one of (1) to (3) above. (5) Further comprising a second wiring layer sandwiched between the first photoelectric conversion unit and the second photoelectric conversion unit, The solid-state imaging element described in (4) above, wherein the lower electrode of the second photoelectric conversion unit is electrically connected to the first through electrode via a second wiring included in the second wiring layer. (6) the first through electrode penetrates through the second wiring layer and the first photoelectric conversion unit from the second wiring to the lower electrode of the first photoelectric conversion unit; The solid-state imaging device according to (5) above. (7) A third photoelectric conversion unit is provided above the second photoelectric conversion unit and converts light into electric charges. the third photoelectric conversion unit has the laminated structure, the lower electrode of the third photoelectric conversion unit is electrically connected to the common charge accumulation unit via the common through electrode; The solid-state imaging device according to (2) above. (8) The solid-state imaging element according to (7) above, wherein the lower electrode of the third photoelectric conversion unit is electrically connected to the common pixel transistor via the common through electrode. (9) the lower electrode of the third photoelectric conversion unit is electrically connected to the lower electrode of the second photoelectric conversion unit via a second through electrode penetrating the second photoelectric conversion unit. The solid-state imaging device according to (7) or (8) above. (10) Further comprising a third wiring layer sandwiched between the second photoelectric conversion unit and the third photoelectric conversion unit, The solid-state imaging element described in (9) above, wherein the lower electrode of the third photoelectric conversion unit is electrically connected to the second through electrode via a third wiring included in the third wiring layer. (11) the second through electrode penetrates through the third wiring layer and the second photoelectric conversion unit from the third wiring to the lower electrode of the second photoelectric conversion unit; The solid-state imaging device according to (10) above. (12) the laminated structure further includes a transfer electrode provided between the lower electrode and the storage electrode and facing the upper electrode with the photoelectric conversion film and the insulating film interposed therebetween; The solid-state imaging device according to any one of (1) to (11) above. (13) The solid-state imaging device according to any one of (1) to (12) above, wherein the photoelectric conversion film is made of an organic material. (14) The solid-state imaging device according to any one of (1) to (13) above, further comprising a fourth photoelectric conversion section provided in the semiconductor substrate for converting light into electric charges. (15) When viewed from above the solid-state imaging device, a first exposed region is provided in a portion of the lower electrode of the first photoelectric conversion unit, the first exposed region being exposed through an opening provided in the insulating film of the first photoelectric conversion unit and being in contact with the photoelectric conversion film of the first photoelectric conversion unit; a first contact region in contact with the first through electrode is provided in a remaining portion of the lower electrode of the first photoelectric conversion unit; The solid-state imaging device according to any one of (4) to (6) above. (16) When viewed from above the solid-state imaging device, the lower electrode of the second photoelectric conversion unit is provided with a second exposed region that is exposed from an opening provided in the insulating film of the second photoelectric conversion unit and is in contact with the photoelectric conversion film of the second photoelectric conversion unit; a second contact region electrically connected to the first through electrode is provided in a part of the second exposed region; The solid-state imaging device according to (15) above. (17) A solid-state imaging device including a plurality of solid-state imaging elements arranged in a matrix, Each of the solid-state imaging elements is A semiconductor substrate; a first photoelectric conversion unit provided above the semiconductor substrate and configured to convert light into electric charges; A second photoelectric conversion unit that is provided above the first photoelectric conversion unit and converts light into electric charges; having Each of the first and second photoelectric conversion units is An upper electrode; A lower electrode; a photoelectric conversion film sandwiched between the upper electrode and the lower electrode; a storage electrode facing the upper electrode with the photoelectric conversion film and an insulating film interposed therebetween; The laminate structure includes The lower electrodes of the first and second photoelectric conversion units each include the first and second photoelectric conversion units are electrically connected to a common charge storage unit provided in the semiconductor substrate in common to the first and second photoelectric conversion units through a common through electrode that penetrates the semiconductor substrate and is provided in common to the first and second photoelectric conversion units; Solid-state imaging device. (18) Further, a third through electrode is provided in an outer periphery surrounding a pixel region in which a plurality of solid-state imaging elements are arranged, the lower electrode of the second photoelectric conversion unit is electrically connected to the common through electrode via a third through electrode; The solid-state imaging device according to (17) above. (19) each of the solid-state imaging elements further includes a shield electrode provided between adjacent ones of the solid-state imaging elements when the solid-state imaging device is viewed from above; The solid-state imaging device according to (17) or (18) above. (20) A readout method for a solid-state imaging device, comprising the steps of: The solid-state imaging device includes: A semiconductor substrate; a first photoelectric conversion unit provided above the semiconductor substrate and configured to convert light into electric charges; A second photoelectric conversion unit that is provided above the first photoelectric conversion unit and converts light into electric charges; Equipped with Each of the first and second photoelectric conversion units is An upper electrode; A lower electrode; a photoelectric conversion film sandwiched between the upper electrode and the lower electrode; a storage electrode facing the upper electrode with the photoelectric conversion film and an insulating film interposed therebetween; The laminate structure includes The lower electrodes of the first and second photoelectric conversion units each include a common through electrode that is provided in common to the first and second photoelectric conversion units and penetrates the semiconductor substrate, and the common through electrode is electrically connected to a common charge storage unit that is provided in common to the first and second photoelectric conversion units within the semiconductor substrate; The storage electrodes of the first and second photoelectric conversion units are respectively controlled to sequentially transfer the charges stored in the photoelectric conversion films of the first and second photoelectric conversion units to the lower electrodes of the first and second photoelectric conversion units with a time difference; the charges sequentially transferred to the lower electrodes of the first and second photoelectric conversion units are sequentially stored in the common charge storage unit and sequentially read out; Including, A method for reading out a solid-state image sensor. [Explanation of symbols]

[0232] 1. Solid-state imaging device 10, 10a, 10b, 10c, 10d, 10e, 10f, 10g, 80 Pixel array section 32 Vertical drive circuit section 34 Column signal processing circuit section 36 Horizontal drive circuit section 38 Output circuit section 40 Control circuit section 42 Pixel drive wiring 44 Vertical signal line 46 Horizontal signal line 48 Input / output terminal 50 Outer periphery 100, 100a, 100b, 100c, 800 Solid-state imaging element 150, 350 organic film 200, 520, 620, 720 wiring layers 230, 530, 570, 572, 630, 630a, 670, 672, 730, 770, 772 Wiring 232, 530a electrode 240 Interlayer insulating film 250, 252, 254, 256, 258, 260, 262 Metal film 300 Semiconductor Substrate 310, 312, 410 Semiconductor area 314, 814 Floating diffusion section 342 Isolation insulating film 352 Photoresist 400, 500, 600, 700, 802, 804, 806 Photoelectric conversion element 402 Anti-reflection coating 404a, 404b waveguide 406a, 406b Inner lens 408a, 408b bulkhead 480, 580 Transparent conductive layer 450, 462, 506, 540, 562, 606, 640, 662, 706, 740, 762, 780 Insulating film 460, 460a, 560, 560a, 660, 760, 860 through electrode 502, 602, 702 common electrode 504, 604, 704 Photoelectric conversion film 506a, 606a aperture 508, 518, 608, 708 Readout electrode 508a, 608a exposed area 508b, 608b contact area 512, 612 Transfer electrode 514, 614 Shield electrode 510, 610, 710 storage electrode 590, 690 shield pattern 790 On-chip lens 900 Electronic equipment 902 Imaging device 910 Optical Lens 912 Shutter mechanism 914 Drive circuit unit 916 Signal Processing Circuit Unit

Claims

1. A semiconductor substrate; a first photoelectric conversion unit provided above the semiconductor substrate and configured to convert light into electric charges; A second photoelectric conversion unit that is provided above the first photoelectric conversion unit and converts light into electric charges; A solid-state imaging device comprising: Each of the first and second photoelectric conversion units is An upper electrode; A lower electrode; a photoelectric conversion film sandwiched between the upper electrode and the lower electrode; the upper electrode, and a storage electrode opposed to the photoelectric conversion film and the insulating film therebetween; A laminate structure including The lower electrodes of the first and second photoelectric conversion units each include a common through electrode that is provided in common to the first and second photoelectric conversion units and penetrates the semiconductor substrate, the common through electrode being electrically connected to a common charge storage unit that is provided in common to the first and second photoelectric conversion units within the semiconductor substrate; the lower electrode of the second photoelectric conversion unit is electrically connected to the lower electrode of the first photoelectric conversion unit via a first through electrode that penetrates the first photoelectric conversion unit, When viewed from above the solid-state imaging device, the first through electrode is provided so as to overlap the common through electrode, a first exposed region is provided in a portion of the lower electrode of the first photoelectric conversion unit, the first exposed region being exposed through an opening provided in the insulating film of the first photoelectric conversion unit and being in contact with the photoelectric conversion film of the first photoelectric conversion unit; The bottom electrode and the storage electrode have the same thickness. Solid-state imaging element.

2. 2. The solid-state imaging element according to claim 1, wherein each of the lower electrodes of the first and second photoelectric conversion units is electrically connected to a common pixel transistor provided in common to the first and second photoelectric conversion units within the semiconductor substrate via the common through electrode.

3. a first wiring layer sandwiched between the semiconductor substrate and the first photoelectric conversion unit; 3 . The solid-state imaging element according to claim 1 , wherein each of the lower electrodes of the first and second photoelectric conversion units is electrically connected to the common through electrode via a first wiring included in the first wiring layer.

4. Further comprising a second wiring layer sandwiched between the first photoelectric conversion unit and the second photoelectric conversion unit, A solid-state imaging element as described in any one of claims 1 to 3, wherein the lower electrode of the second photoelectric conversion unit is electrically connected to the first through electrode via a second wiring included in the second wiring layer.

5. the first through electrode penetrates through the second wiring layer and the first photoelectric conversion unit from the second wiring to the lower electrode of the first photoelectric conversion unit; The solid-state imaging device according to claim 4 .

6. 6. The solid-state imaging device according to claim 1, further comprising a first waveguide provided between the first photoelectric conversion portion and the second photoelectric conversion portion.

7. A third photoelectric conversion unit is provided above the second photoelectric conversion unit and converts light into electric charges. the third photoelectric conversion unit has the laminated structure, the lower electrode of the third photoelectric conversion unit is electrically connected to the common charge accumulation unit via the common through electrode; The solid-state imaging device according to claim 2 .

8. The solid-state imaging device according to claim 7 , wherein the lower electrode of the third photoelectric conversion unit is electrically connected to the common pixel transistor via the common through electrode.

9. the lower electrode of the third photoelectric conversion unit is electrically connected to the lower electrode of the second photoelectric conversion unit via a second through electrode that penetrates the second photoelectric conversion unit.

9. The solid-state imaging device according to claim 7.

10. Further comprising a third wiring layer sandwiched between the second photoelectric conversion unit and the third photoelectric conversion unit, The solid-state imaging element according to claim 9 , wherein the lower electrode of the third photoelectric conversion unit is electrically connected to the second through electrode via a third wiring included in the third wiring layer.

11. the second through electrode penetrates through the third wiring layer and the second photoelectric conversion unit from the third wiring to the lower electrode of the second photoelectric conversion unit; The solid-state imaging device according to claim 10.

12. the laminated structure further includes a transfer electrode provided between the lower electrode and the storage electrode and facing the upper electrode with the photoelectric conversion film and the insulating film interposed therebetween; The solid-state imaging device according to any one of claims 1 to 11.

13. 13. The solid-state imaging device according to claim 1, wherein the photoelectric conversion film is made of an organic material.

14. 14. The solid-state imaging device according to claim 1, further comprising a fourth photoelectric conversion section provided in the semiconductor substrate, the fourth photoelectric conversion section converting light into electric charges.

15. The solid-state imaging device according to claim 14 , further comprising a second waveguide provided between the first photoelectric conversion portion and the fourth photoelectric conversion portion.

16. When viewed from above the solid-state imaging device, a first contact region in contact with the first through electrode is provided in a remaining portion of the lower electrode of the first photoelectric conversion unit; The solid-state imaging device according to any one of claims 1 to 15.

17. When viewed from above the solid-state imaging device, the lower electrode of the second photoelectric conversion unit is provided with a second exposed region that is exposed from an opening provided in the insulating film of the second photoelectric conversion unit and is in contact with the photoelectric conversion film of the second photoelectric conversion unit; a second contact region electrically connected to the first through electrode is provided in a portion of the second exposed region; The solid-state imaging device according to claim 16.

18. A solid-state imaging device including a plurality of solid-state imaging elements arranged in a matrix, Each of the solid-state imaging elements is A semiconductor substrate; a first photoelectric conversion unit provided above the semiconductor substrate and configured to convert light into electric charges; A second photoelectric conversion unit that is provided above the first photoelectric conversion unit and converts light into electric charges; having Each of the first and second photoelectric conversion units is An upper electrode; A lower electrode; a photoelectric conversion film sandwiched between the upper electrode and the lower electrode; the upper electrode, and a storage electrode opposed to the photoelectric conversion film and the insulating film therebetween; A laminate structure including The lower electrodes of the first and second photoelectric conversion units each include a common through electrode that is provided in common to the first and second photoelectric conversion units and penetrates the semiconductor substrate, the common through electrode being electrically connected to a common charge storage unit that is provided in common to the first and second photoelectric conversion units within the semiconductor substrate; the lower electrode of the second photoelectric conversion unit is electrically connected to the lower electrode of the first photoelectric conversion unit via a first through electrode that penetrates the first photoelectric conversion unit, When viewed from above the solid-state imaging device, the first through electrode is provided so as to overlap the common through electrode, a first exposed region is provided in a portion of the lower electrode of the first photoelectric conversion unit, the first exposed region being exposed through an opening provided in the insulating film of the first photoelectric conversion unit and being in contact with the photoelectric conversion film of the first photoelectric conversion unit; The bottom electrode and the storage electrode have the same thickness. Solid-state imaging device.

19. each of the solid-state imaging elements further includes a shield electrode provided between adjacent ones of the solid-state imaging elements when the solid-state imaging device is viewed from above; The solid-state imaging device according to claim 18.

20. A readout method for a solid-state imaging device, comprising the steps of: The solid-state imaging device includes: A semiconductor substrate; a first photoelectric conversion unit provided above the semiconductor substrate and configured to convert light into electric charges; A second photoelectric conversion unit that is provided above the first photoelectric conversion unit and converts light into electric charges; Equipped with Each of the first and second photoelectric conversion units is An upper electrode; A lower electrode; a photoelectric conversion film sandwiched between the upper electrode and the lower electrode; the upper electrode, and a storage electrode opposed to the photoelectric conversion film and the insulating film therebetween; The laminate structure includes The lower electrodes of the first and second photoelectric conversion units each include a common through electrode that is provided in common to the first and second photoelectric conversion units and penetrates the semiconductor substrate, the common through electrode being electrically connected to a common charge storage unit that is provided in common to the first and second photoelectric conversion units within the semiconductor substrate; the lower electrode of the second photoelectric conversion unit is electrically connected to the lower electrode of the first photoelectric conversion unit via a first through electrode that penetrates the first photoelectric conversion unit, When viewed from above the solid-state imaging device, the first through electrode is provided so as to overlap the common through electrode, a first exposed region is provided in a portion of the lower electrode of the first photoelectric conversion unit, the first exposed region being exposed through an opening provided in the insulating film of the first photoelectric conversion unit and being in contact with the photoelectric conversion film of the first photoelectric conversion unit; the bottom electrode and the storage electrode have the same thickness; The storage electrodes of the first and second photoelectric conversion units are respectively controlled to sequentially transfer the charges stored in the photoelectric conversion films of the first and second photoelectric conversion units to the lower electrodes of the first and second photoelectric conversion units with a time difference; the charges sequentially transferred to the lower electrodes of the first and second photoelectric conversion units are sequentially stored in the common charge storage unit and sequentially read out; Including, A method for reading out a solid-state image sensor.

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