Semiconductor device and inverter device

Abstract

To provide a semiconductor device and an inverter device that restrain reduction in yield by preventing an adhesive from leaking into the interior of the semiconductor device.SOLUTION: A semiconductor device includes a heat sink 2, a wiring board 3 provided on the heat sink 2, a semiconductor chip 9 provided on the wiring board 3, a case housing 11 provided on the heat sink 2 so as to surround the wiring board 3 and the semiconductor chip 9, an adhesive 14 for bonding a lower surface joint portion 13 of the case housing 11 and an upper surface joint portion 12 of the heat sink 2, a sealing material 15 which is filled in the case housing 11 to cover the wiring board 3 and the semiconductor chip 9, and a convex portion 19a which is provided to the lower surface joint portion 13 of the case housing 11 or the upper surface joint portion 12 of the heat sink 2 to separate the adhesive 14 and the sealing material 15 from each other.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a semiconductor device and an inverter device in which a case housing and a heat sink are bonded with an adhesive. [Background technology]

[0002] In a semiconductor device in which a sealing material is filled in the case, the case housing and the heat sink are bonded with an adhesive. The adhesive also functions as a sealant to prevent moisture and the like from entering through the joint between the case housing and the heat sink. For this reason, a structure in which a step is provided on at least one of the outer peripheries of the bottom surface of the case housing and the top surface of the heat sink is disclosed as a conventional technique for ensuring the amount of adhesive so that the adhesive can function as a sealant. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] International Publication No. 2018 / 055667 Summary of the Invention [Problem to be solved by the invention]

[0004] In conventional technology, there was a problem that adhesive could leak into the inside of the semiconductor device, and the thermal expansion of the leaked adhesive could cause cracks in the insulating substrate, resulting in a decrease in yield.

[0005] The present disclosure has been made to solve the problems described above, and its purpose is to obtain a semiconductor device and an inverter device that suppresses a decrease in yield by preventing leakage of adhesive into the inside of the semiconductor device. [Means for solving the problem]

[0006] The semiconductor device and inverter device according to the present disclosure further comprise a heat sink, a wiring board provided on the heat sink, a semiconductor chip provided on the wiring board, a case housing provided on the heat sink so as to surround the wiring board and the semiconductor chip, an adhesive for bonding a lower surface joint of the case housing and an upper surface joint of the heat sink, which are located at positions where the case housing and the heat sink face each other, and an encapsulant filled in the case housing and covering the wiring board and the semiconductor chip, a first convex portion separating the adhesive and the encapsulant at the lower surface joint of the case housing or the upper surface joint of the heat sink, and a second convex portion located outside the first convex portion and provided at the upper surface joint of the heat sink or the lower surface joint of the case housing, and the adhesive is applied to an area surrounded by the first convex portion and the second convex portion. The heat sink has a first recess provided on an upper joint of the heat sink or a lower joint of the case housing, the first recess being fitted with the first protrusion, and a second recess provided on an upper joint of the heat sink or a lower joint of the case housing, the second protrusion being fitted with the second protrusion, the first recess having a shallower depth than the height of the first protrusion, and the second recess having a shallower depth than the height of the second protrusion. Semiconductor device. Effect of the Invention

[0007] According to the present disclosure, the lower joint of the case housing or the upper joint of the heat sink No. 1 Convex and a second protrusion located outside the first protrusion and separating an adhesive provided on the upper joint of the heat sink or the lower joint of the case housing from an outer edge of the heat sink. By providing the semiconductor device with the adhesive, leakage of the adhesive into the semiconductor device can be suppressed. Since a sufficient amount of adhesive can be secured in the area surrounded by the first convex portion and the second convex portion, a sealing effect can also be obtained that prevents moisture and the like from penetrating into the inside of the semiconductor device. This makes it possible to obtain a semiconductor device and an inverter device with reduced yield. [Brief description of the drawings]

[0008] [Figure 1] 1 is a cross-sectional view showing a semiconductor device according to a first embodiment of the present disclosure. [Diagram 2] 2 is an enlarged cross-sectional view of a joint between a heat sink and a case housing of the semiconductor device according to the first embodiment of the present disclosure. FIG. [Diagram 3] 11 is an enlarged cross-sectional view of a joint between a heat sink and a case housing of a semiconductor device according to a second embodiment of the present disclosure. FIG. [Figure 4] 13 is an enlarged cross-sectional view of a joint between a heat sink and a case housing of a semiconductor device according to a first modified example of the second embodiment of the present disclosure. FIG. [Diagram 5]13 is an enlarged cross-sectional view of a joint between a heat sink and a case housing of a semiconductor device according to a second modification of the second embodiment of the present disclosure. FIG. [Figure 6] 13 is an enlarged cross-sectional view of a joint between a heat sink and a case housing of a semiconductor device according to a third modification of the second embodiment of the present disclosure. FIG. [Figure 7] 11 is an enlarged cross-sectional view of a joint between a heat sink and a case housing of a semiconductor device according to a third embodiment of the present disclosure. FIG. [Figure 8] 13 is an enlarged cross-sectional view of a joint between a heat sink and a case housing of a semiconductor device according to a fourth embodiment of the present disclosure. FIG. [Figure 9] 13 is an enlarged cross-sectional view of a joint between a heat sink and a case housing of a semiconductor device according to a fifth embodiment of the present disclosure. FIG. [Figure 10] 13 is an enlarged cross-sectional view of a joint between a heat sink and a case housing of a semiconductor device according to a sixth embodiment of the present disclosure. FIG. [Figure 11] 13 is an enlarged cross-sectional view of a joint between a heat sink and a case housing of a semiconductor device according to a seventh embodiment of the present disclosure. FIG. [Figure 12] 13 is an enlarged cross-sectional view of a joint between a heat sink and a case housing of a semiconductor device according to an eighth embodiment of the present disclosure. FIG. [Figure 13] 13 is an enlarged cross-sectional view of a joint between a heat sink and a case housing of a semiconductor device according to a ninth embodiment of the present disclosure. FIG. [Figure 14] FIG. 13 is a plan view showing a semiconductor device according to a ninth embodiment of the present disclosure. [Figure 15] FIG. 23 is a cross-sectional view showing an inverter device according to a tenth embodiment of the present disclosure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, a semiconductor device and an inverter device according to an embodiment of the present disclosure will be described with reference to the drawings. Components having the same or corresponding functions are denoted by the same reference numerals, and repeated description may be omitted.

[0010] Embodiment 1 FIG. 1 is a cross-sectional view showing a semiconductor device 1 according to a first embodiment. As shown in FIG. 1, a wiring board 3 is provided on a heat sink 2. The heat sink 2 is made of a metal such as Cu or Al, or a composite material such as AlSiC. The wiring board 3 is provided with a lower electrode 5 on the lower surface of an insulating substrate 4, and an upper electrode 6 and an upper electrode 7 on the upper surface of the insulating substrate 4. The insulating substrate 4 is, for example, a ceramic substrate. The lower electrode 5 is joined to the heat sink 2 by solder 8a, and a semiconductor chip 9 is provided on the upper electrode 6 and joined by solder 8b. The semiconductor chip 9 is, for example, an insulated gate bipolar transistor (IGBT), a field effect transistor (MOSFET), or a diode. The semiconductor chip 9 is connected to the upper electrode 7 by a wire 10. A case 11 is provided on the heat sink 2 so as to surround the wiring board 3 and the semiconductor chip 9. The case housing 11 is made of engineering plastic such as PPS (Poly Phenylene Sulfide), PBT (Polybutylene Terephthalate), or PET+PBT (Polyethylene Terephthalate + Polybutylene Terephthalate). An upper joint 12 of the heat sink 2 is joined to a lower joint 13 of the opposing case housing 11 by an adhesive 14. The adhesive 14 is a silicone-based or epoxy-based material. In addition, in order to ensure insulation, a sealant 15 is filled in the case housing 11 and covers the wiring board 3, the semiconductor chip 9, and the wires 10. The sealant 15 is, for example, silicone gel or epoxy resin. An opening 16 of the case housing 11 is provided with a lid 17 to prevent foreign matter from entering. The lid 17 is, for example, an engineering plastic such as PPS, PBT, or PET+PBT. 2 is an enlarged view of a joint 18 between the heat sink 2 and the case housing 11, which is surrounded by a dashed line in FIG. 1. As shown in FIG. 2, the heat sink 2 and the case housing 11 are bonded by an adhesive 14 at an upper joint 12 of the heat sink 2 and a lower joint 13 of the case housing 11, which are portions facing each other. A convex portion 19a (first convex portion) is provided on the lower joint 13 of the case housing 11 so as to surround the periphery of the wiring board 3, and when the heat sink 2 and the case housing 11 are bonded, the convex portion 19a is in contact with the upper joint 12 of the heat sink 2 so as to surround the wiring board 3. In addition, in the semiconductor device 1, if the direction from the heat sink outer edge portion 23 toward the wiring board 3 is defined as the inner direction and the direction from the wiring board 3 toward the heat sink outer edge portion 23 is defined as the outer direction, the sealant 15 is filled inside the convex portion 19a with the convex portion 19a as a boundary, and the adhesive 14 is applied to the outside of the convex portion 19a. In addition, in Figure 2, for simplicity, the convex portion 19a is shown as a protrusion with a steeply rising cross-sectional shape, but it is not limited to this. For example, it may have a gently rising cross-sectional shape, or it may have a shape that makes contact with the upper joint portion 12 of the heat sink 2 as a wider flat surface.

[0011] In the semiconductor device 1 configured in this manner, adhesive 14 is applied to the outside of protrusion 19a when joining heat sink 2 and case housing 11. In other words, protrusion 19a separates adhesive 14 from sealing material 15, and protrusion 19a acts as a barrier for adhesive 14 in the inward direction, so that adhesive 14 can be prevented from leaking out to the inside of protrusion 19a where sealing material 15 is filled.

[0012] As described above, the adhesive 14 can be prevented from leaking inward by providing the protrusion 19a on the lower surface joint 13 of the case housing 11. As a result, it is possible to prevent defects caused by the adhesive 14 leaking inward, and it is possible to obtain the effect of suppressing a decrease in yield caused by the adhesive 14 leaking inward.

[0013] Embodiment 2 Fig. 3 is an enlarged cross-sectional view of joint 18 according to embodiment 2. As shown in Fig. 3, adhesive 14 is applied to an area surrounded by convex portion 19a provided on lower surface joint portion 13 of case housing 11 and convex portion 20b (second convex portion) provided on upper surface joint portion 12 of heat sink 2 outside convex portion 19a.

[0014] In the semiconductor device thus configured, when bonding the heat sink 2 to the case housing 11, adhesive 14 is applied to the area surrounded by the protrusions 19a and 20b, so that the heat sink 2 and the case housing 11 are bonded without the adhesive 14 penetrating inside the semiconductor device, and after bonding, the protrusion 19a acts as a barrier to prevent the adhesive 14 from leaking into the inside of the semiconductor device. Also, although only one protrusion 19a is provided in the first embodiment, multiple protrusions 19a may be provided as shown in Fig. 3, in which case the adhesive 14 can be kept in the area surrounded by the protrusions 19a and 20b.

[0015] Therefore, in addition to the same effect as in embodiment 1, in embodiment 2, since a sufficient amount of adhesive 14 can be secured in the area surrounded by convex portions 19a and 20b, a sealing effect can also be obtained that prevents moisture and the like from penetrating into the inside of the semiconductor device.

[0016] Variation 1 of embodiment 2 4 is an enlarged cross-sectional view of joint 18 according to Modification 1 of Embodiment 2. Modification 1 of Embodiment 2 has a configuration in which convex portion 19a provided on lower surface joint 13 of case housing 11 in Embodiment 2 is provided on upper surface joint 12 of heat sink 2, and convex portion 20b provided on upper surface joint 12 of heat sink 2 is provided on lower surface joint 13 of case housing 11, and adhesive 14 is applied to an area surrounded by convex portion 19b (second convex portion) provided on lower surface joint 13 of case housing 11 and convex portion 20a (first convex portion) provided on upper surface joint 12 of heat sink 2 as shown in FIG.

[0017] In the semiconductor device configured in this manner, when bonding the heat sink 2 to the case housing 11, adhesive 14 is applied to the area surrounded by the protrusions 19b and 20a, so that the heat sink 2 and the case housing 11 are bonded without the adhesive 14 penetrating inside the semiconductor device, and after bonding, the protrusions 20a act as a barrier to prevent the adhesive 14 from leaking into the inside of the semiconductor device. Also, as in the second embodiment, the adhesive 14 can be kept in the area surrounded by the protrusions 19b and 20a.

[0018] Therefore, the same effects as those in the second embodiment can be obtained.

[0019] Variation 2 of embodiment 2 Fig. 5 is an enlarged cross-sectional view of joint 18 according to Modification 2 of Embodiment 2. Modification 2 of Embodiment 2 has a configuration in which two convex portions, convex portion 19a and convex portion 20b in Embodiment 2, are provided on bottom joint 13 of case housing 11, and adhesive 14 is applied to an area surrounded by convex portion 19a (first convex portion) and convex portion 19b (second convex portion) provided on bottom joint 13 of case housing 11 as shown in Fig. 5.

[0020] In the semiconductor device configured in this manner, when bonding the heat sink 2 to the case housing 11, the adhesive 14 is applied to the area surrounded by the protrusions 19a and 19b, so that the heat sink 2 and the case housing 11 are bonded without the adhesive 14 penetrating inside the semiconductor device, and after bonding, the protrusions 19a act as a barrier to prevent the adhesive 14 from leaking inside the semiconductor device. Also, as in the second embodiment, the adhesive 14 can be kept in the area surrounded by the protrusions 19a and 19b. Furthermore, even if a misalignment occurs in the bonding position between the heat sink 2 and the case housing 11, the interval between the protrusions 19a and 19b does not change, so the amount of adhesive can be secured regardless of the presence or absence of a misalignment in the bonding position between the heat sink 2 and the case housing 11.

[0021] Therefore, the same effects as those of the second embodiment can be obtained regardless of the misalignment of the joining positions of the heat sink 2 and the case housing 11.

[0022] Variation 3 of embodiment 2 Fig. 6 is an enlarged cross-sectional view of joint 18 according to Modification 3 of Embodiment 2. Modification 3 of Embodiment 2 has a configuration in which two convex parts, convex part 19a and convex part 20b in Embodiment 2, are provided on upper surface joint 12 of heat sink 2, and adhesive 14 is applied to a region surrounded by convex part 20a (first convex part) and convex part 20b (second convex part) provided on upper surface joint 12 of heat sink 2 as shown in Fig. 6.

[0023] In the semiconductor device configured in this manner, when the heat sink 2 and the case housing 11 are joined, the adhesive 14 is applied to the area surrounded by the convex parts 20a and 20b, so that the heat sink 2 and the case housing 11 are joined without the adhesive 14 penetrating inside the semiconductor device, and after joining, the convex part 20a acts as a barrier to prevent the adhesive 14 from leaking inside the semiconductor device. Also, as in the second embodiment, the adhesive 14 can be kept in the area surrounded by the convex parts 20a and 20b. Furthermore, even if a misalignment occurs in the joining position of the heat sink 2 and the case housing 11, the interval between the convex parts 20a and 20b does not change, so the amount of adhesive can be secured regardless of the presence or absence of a misalignment in the joining position of the heat sink 2 and the case housing 11.

[0024] Therefore, the same effects as those of the second embodiment can be obtained regardless of the misalignment of the joining positions of the heat sink 2 and the case housing 11.

[0025] Embodiment 3 FIG. 7 is a cross-sectional view of an enlarged joint 18 according to the third embodiment. The third embodiment has a configuration in which a recess is provided at a position facing the two protrusions of the protrusion 19a and the protrusion 20b in the second embodiment. As shown in FIG. 7, the protrusion 19a and the recess 21b are provided at the lower joint 13 of the case housing 11, and the protrusion 20b and the recess 22a are provided at the upper joint 12 of the heat sink 2. The protrusion 19a, the recess 21b, the protrusion 20b, and the recess 22a are provided at a position where the protrusion 19a (first protrusion) and the recess 22a (first recess) are fitted together, and the protrusion 20b (second protrusion) and the recess 21b (second recess) are fitted together when the heat sink 2 and the case housing 11 are joined together. In addition, the adhesive 14 is applied to the area surrounded by the protrusion 19a and the protrusion 20b.

[0026] In the semiconductor device configured in this manner, when bonding the heat sink 2 to the case housing 11, the adhesive 14 is applied to the area surrounded by the protrusions 19a and 20b, so that the heat sink 2 and the case housing 11 are bonded without the adhesive 14 penetrating inside the semiconductor device, and after bonding, the protrusions 19a act as a barrier to prevent the adhesive 14 from leaking into the inside of the semiconductor device. Also, as in the second embodiment, the adhesive 14 can be kept in the area surrounded by the protrusions 19a and 20b. Furthermore, the protrusions 19a and the recesses 22a and the protrusions 20b and the recesses 21b fit together, so that it is possible to prevent misalignment when bonding the heat sink 2 to the case housing 11.

[0027] Therefore, in addition to the same effects as in embodiment 2, embodiment 3 can prevent misalignment when joining the heat sink 2 and the case housing 11, thereby providing the effect of suppressing yield reduction due to misalignment.

[0028] Embodiment 4 FIG. 8 is a cross-sectional view of an enlarged joint 18 according to the fourth embodiment. The fourth embodiment has a configuration in which the difference between the depth of the recess and the height of the fitting protrusion in the third embodiment is made larger. As shown in FIG. 8, the lower surface joint 13 of the case housing 11 is provided with a protrusion 19a and a protrusion 19b, and the upper surface joint 12 of the heat sink 2 is provided with a recess 22a (first recess) and a recess 22b (second recess). The protrusion 19a, the protrusion 19b, the recess 22a, and the recess 22b are provided at positions where the protrusion 19a and the recess 22a fit together and the protrusion 19b and the recess 22b fit together when the heat sink 2 and the case housing 11 are joined, and the depth of the recess 22a is shallower than the height of the protrusion 19a, and the depth of the recess 22b is shallower than the height of the protrusion 19b. In addition, the adhesive 14 is applied to the area surrounded by the protrusion 19a and the protrusion 19b.

[0029] In the semiconductor device thus configured, when the heat sink 2 and the case housing 11 are joined, the adhesive 14 is applied to the area surrounded by the protrusions 19a and 19b, so that the heat sink 2 and the case housing 11 are joined without the adhesive 14 penetrating inside the semiconductor device, and after joining, the protrusions 19a act as a barrier to prevent the adhesive 14 from leaking into the inside of the semiconductor device. In addition, since the depth of the recesses 22a and 22b is formed shallower than the height of the protrusions 19a and 19b, a larger amount of adhesive 14 can be retained in the area surrounded by the protrusions 19a and 19b than in the third embodiment. Furthermore, since the protrusions 19a and 22a fit together, and the protrusions 19b and 22b fit together, it is possible to prevent the heat sink 2 and the case housing 11 from being misaligned when they are joined.

[0030] Therefore, in addition to the same effect as in embodiment 3, in embodiment 4, since a sufficient amount of adhesive 14 can be secured in the area surrounded by convex portions 19a and 19b, a sealing effect can also be obtained that prevents moisture and the like from penetrating into the inside of the semiconductor device.

[0031] Embodiment 5. 9 is a cross-sectional view of an enlarged joint 18 according to the fifth embodiment. The fifth embodiment has a configuration in which adhesive 14 is applied to the region between protrusion 19b and heat sink outer edge 23 in the fourth embodiment, and protrusion 19a and recess 21b are provided in lower surface joint 13 of case housing 11, and protrusion 20b and recess 22a are provided in upper surface joint 12 of heat sink 2 as shown in FIG. 9. Protrusion 19a, recess 21b, protrusion 20b, and recess 22a are provided at positions where protrusion 19a and recess 22a fit together and protrusion 20b and recess 21b fit together when heat sink 2 and case housing 11 are joined, and the depth of recess 22a is shallower than the height of protrusion 19a, and the depth of recess 21b is shallower than the height of protrusion 20b. Moreover, adhesive 14 is not applied to the area surrounded by protrusions 19a and 20b, but adhesive 14 is applied to the area between protrusion 20b of upper surface bonding portion 12 of heat sink 2 and outer edge portion 23 of the heat sink.

[0032] In the semiconductor device thus configured, when the heat sink 2 and the case housing 11 are joined, the adhesive 14 is applied to the region between the convex portion 20b and the outer edge portion 23 of the heat sink, so that the heat sink 2 and the case housing 11 are joined without the adhesive 14 penetrating inside the semiconductor device, and after joining, the convex portion 19a and the convex portion 20b act as barriers to prevent the adhesive 14 from leaking into the inside of the semiconductor device. In addition, the depth of the concave portion 22a and the concave portion 21b is formed shallower than the height of the convex portion 19a and the convex portion 20b, so that the adhesive 14 can be retained in the region between the convex portion 20b and the outer edge portion 23 of the heat sink. Furthermore, the convex portion 19a and the concave portion 22a are fitted together, and the convex portion 20b and the concave portion 21b are fitted together, so that it is possible to prevent the heat sink 2 and the case housing 11 from being misaligned when they are joined together. Furthermore, even if adhesive 14 leaks from the gap between convex portion 20b and concave portion 21b due to processing variations during manufacturing, the leaking adhesive 14 can be contained within the area surrounded by convex portion 19a and convex portion 20b, thereby preventing adhesive 14 from leaking to the inside of convex portion 19a where sealing material 15 is filled.

[0033] Therefore, in addition to the same effects as in the fourth embodiment, the fifth embodiment can provide an effect of suppressing a decrease in yield without narrowing the design tolerance.

[0034] Embodiment 6 Fig. 10 is an enlarged cross-sectional view of joint 18 according to embodiment 5. In embodiment 6, by providing three or more convex portions, adhesive 14 is not applied to an area adjacent to an area filled with sealant 15, as in embodiment 5, and as shown in Fig. 10, convex portions 19a, 19b, and 19c (third convex portions) are provided in lower surface joint 13 of case housing 11, and concave portions 22a, 22b, and 22c (third concave portions) are provided in upper surface joint 12 of heat sink 2. The protrusions 19a, 19b, 19c, and the recesses 22a, 22b, and 22c are provided at positions where the protrusions 19a and 22a fit together, the protrusions 19b and 22b fit together, and the protrusions 19c and 22c fit together when the heat sink 2 and the case housing 11 are joined, and the depth of the recesses 22a is shallower than the height of the protrusions 19a, the depth of the recesses 22b is shallower than the height of the protrusions 19b, and the depth of the recesses 22c is shallower than the height of the protrusions 19c. Also, the adhesive 14 is applied to the area surrounded by the protrusions 19b and 19c.

[0035] In the semiconductor device thus configured, when the heat sink 2 and the case housing 11 are joined, the adhesive 14 is applied to the area surrounded by the convex portions 19b and 19c, so that the heat sink 2 and the case housing 11 are joined without the adhesive 14 penetrating inside the semiconductor device, and after joining, the convex portions 19a and 19b act as barriers to prevent the adhesive 14 from leaking out to the inside of the convex portion 19a filled with the sealing material 15. In addition, the depths of the concave portions 22a, 22b, and 22c are formed shallower than the heights of the convex portions 19a, 19b, and 19c, so that the adhesive 14 can be retained in the area surrounded by the convex portions 19b and 19c, compared to the third embodiment. Furthermore, the convex portions 19a and 22a fit together, the convex portions 19b and 22b fit together, and the convex portions 19c and 22c fit together, so that it is possible to prevent misalignment of the heat sink 2 and the case housing 11 when they are joined together. Furthermore, even if adhesive 14 leaks from the gap between convex portion 19b and concave portion 22b due to processing variations during manufacturing, the leakage of adhesive 14 can be contained within the area surrounded by convex portion 19a and convex portion 19b, thereby preventing adhesive 14 from leaking out to the inside of convex portion 19a where sealing material 15 is filled.

[0036] Therefore, the same effects as those in the fifth embodiment can be obtained.

[0037] Embodiment 7 FIG. 11 is a cross-sectional view of an enlarged joint 18 according to the seventh embodiment. In the seventh embodiment, a through hole 25 is provided in the protrusion 24 to allow the adhesive 14 to escape to the outside when the applied adhesive 14 is excessive. As shown in FIG. 11, the lower joint 13 of the case housing 11 is provided with a protrusion 19a and a recess 21b, and the upper joint 12 of the heat sink 2 is provided with a recess 22a and a protrusion 24 having a through hole 25. The protrusion 19a, the recess 21b, the protrusion 24, and the recess 22a are provided at positions where the protrusion 19a and the recess 22a fit together and the protrusion 24 and the recess 21b fit together when the case housing 11 and the heat sink 2 are joined together, and the depth of the recess 22a is shallower than the height of the protrusion 19a, and the depth of the recess 21b is shallower than the height of the protrusion 24. The adhesive 14 is applied to the area surrounded by the protrusion 19a and the protrusion 24.

[0038] In the semiconductor device thus configured, when the heat sink 2 and the case housing 11 are joined, the adhesive 14 is applied to the area surrounded by the convex portions 19a and 24, so that the heat sink 2 and the case housing 11 are joined without the adhesive 14 penetrating inside the semiconductor device, and after joining, the convex portions 19a act as a barrier to prevent the adhesive 14 from leaking into the inside of the semiconductor device. In addition, the depth of the concave portions 22a and 21b is formed shallower than the height of the convex portions 19a and 24, so that the adhesive 14 can be retained in the area surrounded by the convex portions 19a and 24. Furthermore, if a large amount of adhesive 14 is applied to the area surrounded by the convex portions 19a and 24, the excess adhesive 14 is discharged to the outside through the through holes 25. Furthermore, since the convex portion 19a fits into the concave portion 22a, and the convex portion 24 fits into the concave portion 21b, it is possible to prevent misalignment of the heat sink 2 and the case housing 11 when they are joined together.

[0039] Therefore, in addition to the same effects as those of the fourth embodiment, it is possible to obtain an effect of suppressing a decrease in yield caused by adhesive 14 leaking to the inside of the semiconductor device even when a large amount of adhesive 14 is applied.

[0040] Embodiment 8 FIG. 12 is a cross-sectional view of an enlarged joint 18 according to the eighth embodiment. In the eighth embodiment, a groove 26 for releasing the adhesive 14 when the applied adhesive 14 is excessive is provided in the case housing 11, and as shown in FIG. 12, a convex portion 19a, a concave portion 21b, and a groove 26 are provided in the lower joint 13 of the case housing 11, and a convex portion 20b and a concave portion 22a are provided in the upper joint 12 of the heat sink 2. The convex portion 19a, the concave portion 21b, the convex portion 20b, and the concave portion 22a are provided at positions where the convex portion 19a and the concave portion 22a are fitted together and the convex portion 20b and the concave portion 21b are fitted together when the heat sink 2 and the case housing 11 are joined, and the depth of the concave portion 22a is shallower than the height of the convex portion 19a, and the depth of the concave portion 21b is shallower than the height of the convex portion 20b. The groove 26 is provided between the convex portion 19a and the concave portion 21b. Moreover, adhesive 14 is applied to the area surrounded by protrusions 19a and 20b.

[0041] In the semiconductor device thus configured, when the heat sink 2 and the case housing 11 are joined, the adhesive 14 is applied to the area surrounded by the protrusions 19a and 20b, so that the heat sink 2 and the case housing 11 are joined without the adhesive 14 penetrating inside the semiconductor device, and after joining, the protrusions 19a act as a barrier to prevent the adhesive 14 from leaking into the inside of the semiconductor device. In addition, the depth of the recesses 22a and 21b is formed shallower than the height of the protrusions 19a and 20b, so that the adhesive 14 can be retained in the area surrounded by the protrusions 19a and 20b. Furthermore, if a large amount of adhesive 14 is applied to the area surrounded by the protrusions 19a and 20b, the excess adhesive 14 can escape into the grooves 26. Furthermore, since the convex portion 19a fits into the concave portion 22a, and the convex portion 20b fits into the concave portion 21b, it is possible to prevent misalignment of the heat sink 2 and the case housing 11 when they are joined together.

[0042] Therefore, the same effects as those in the seventh embodiment can be obtained.

[0043] Embodiment 9 13 is an enlarged cross-sectional view of the joint 18 according to the ninth embodiment. In the ninth embodiment, the case housing 11 is provided with an air hole 27 directly connected to the groove 26 of the eighth embodiment. As shown in FIG. 13, the lower joint 13 of the case housing 11 is provided with a convex portion 19a, a concave portion 21b, and a groove portion 26. The case housing 11 is further provided with an air hole 27 directly connected to the groove portion 26 and leading to the outside of the semiconductor device, and the upper joint 12 of the heat sink 2 is provided with a convex portion 20b and a concave portion 22a. The convex portion 19a, the concave portion 21b, the convex portion 20b, and the concave portion 22a are provided at positions where the convex portion 19a and the concave portion 22a are fitted together when the heat sink 2 and the case housing 11 are joined, and the depth of the concave portion 22a is shallower than the height of the convex portion 19a, and the depth of the concave portion 21b is shallower than the height of the convex portion 20b. The groove 26 is provided between the convex portion 19a and the concave portion 21b, and is directly connected to the air hole 27. The adhesive 14 is applied to the area surrounded by the convex portion 19a and the convex portion 20b. 14 is a diagram showing the formation position of groove 26 provided in lower joint 13 of case housing 11 by a dashed line and the positional relationship with air hole 27 provided in case housing 11 when the semiconductor device is viewed from the direction covered by case housing 11 and lid 17. As shown in Fig. 14, air holes 27 directly connected to groove 26 provided in lower joint 13 of case housing 11 are provided in multiple places.

[0044] In the semiconductor device thus configured, when the heat sink 2 and the case housing 11 are joined, the adhesive 14 is applied to the area surrounded by the protrusions 19a and 20b, so that the heat sink 2 and the case housing 11 are joined without the adhesive 14 penetrating inside the semiconductor device, and after joining, the protrusions 19a act as a barrier to prevent the adhesive 14 from leaking into the inside of the semiconductor device. In addition, the depth of the recesses 22a and 21b is formed shallower than the height of the protrusions 19a and 20b, so that the adhesive 14 can be retained in the area surrounded by the protrusions 19a and 20b. Furthermore, if a large amount of adhesive 14 is applied to the area surrounded by the protrusions 19a and 20b, the excess adhesive 14 can escape to the grooves 26 directly connected to the air holes 27.

[0045] Therefore, since air hole 27 provides an escape route for air, when a large amount of adhesive 14 is applied to the area surrounded by convex portion 19a and convex portion 20b, adhesive 14 can escape to groove portion 26 more reliably than in embodiment 7.

[0046] Embodiment 10 Fig. 15 is a cross-sectional view of an inverter device 28 according to embodiment 10. The inverter device 28 shown in Fig. 15 is an inverter device in which fins 29 are mounted on the heat sink 2 of the semiconductor device 1 shown in embodiment 1. Although Fig. 15 shows an inverter device using the semiconductor device shown in embodiment 1, an inverter device equipped with the semiconductor device shown in embodiments 1 to 9 may also be used.

[0047] In the inverter device configured in this manner, it is possible to provide an inverter device having the effects shown in embodiment 1. Incidentally, not limited to embodiment 1, an inverter device having the effects shown in embodiments 1 to 9 can be provided by using an inverter device equipped with the semiconductor device shown in embodiments 1 to 9. [Explanation of symbols]

[0048] 1 Semiconductor device 2 Heat sink 3. Wiring board 4. Insulating Substrate 5 Bottom electrode 6 Top electrode 7 Top electrode 8a, 8b Solder 9. Semiconductor Chips 10 Wire 11 Case housing 12 Top joint 13 Bottom joint 14. Adhesive 15 Encapsulating materials 16 Opening 17 Lid 18 Joint 19a, 19b, 19c Convex part 20a, 20b Convex portion 21b Recess 22a, 22b, 22c recess 23 Outer edge of heat sink 24 Convex 25 through hole 26 Groove 27 Air Hole 28 Inverter device 29 Finn

Claims

1. A heat sink; a wiring board provided on the heat sink; a semiconductor chip provided on the wiring substrate; a case housing provided on the heat sink so as to surround the wiring board and the semiconductor chip; an adhesive for bonding a lower surface joint portion of the case housing and an upper surface joint portion of the heat sink, the lower surface joint portion being located at positions facing each other of the case housing and the heat sink; a sealing material filled in the case housing and covering the wiring board and the semiconductor chip; a first protrusion separating the adhesive and the sealing material from the lower surface bonding portion of the case housing or the upper surface bonding portion of the heat sink; a second protrusion provided at a position outside the first protrusion and at the upper joint of the heat sink or the lower joint of the case housing, The adhesive is applied to an area surrounded by the first convex portion and the second convex portion, a first recess provided on the upper joint portion of the heat sink or the lower joint portion of the case housing, the first recess being fitted with the first protrusion; a second recess provided in the upper joint portion of the heat sink or the lower joint portion of the case housing, the second recess being fitted into the second protrusion, The first recess has a depth shallower than a height of the first protrusion, The second recess has a depth shallower than the height of the second protrusion.

2. The semiconductor device according to claim 1 , wherein the second protrusion is provided with a through hole through which an adhesive can flow from the inside to the outside of the semiconductor device.

3. The semiconductor device according to claim 1 , further comprising: a groove provided in the lower surface joint portion of the case housing, the groove being located between the first protrusion and the second protrusion.

4. 2 . The semiconductor device according to claim 1 , further comprising an air hole provided between the first convex portion and the second convex portion, the air hole penetrating the case housing from the lower joint portion of the case housing.

5. A heat sink; a wiring board provided on the heat sink; a semiconductor chip provided on the wiring substrate; a case housing provided on the heat sink so as to surround the wiring board and the semiconductor chip; an adhesive for bonding a lower surface joint portion of the case housing and an upper surface joint portion of the heat sink, the lower surface joint portion being located at positions facing each other of the case housing and the heat sink; a first protrusion provided on the lower surface bonding portion of the case housing or the upper surface bonding portion of the heat sink; a second protrusion provided at a position outside the first protrusion and at the upper joint portion of the heat sink or the lower joint portion of the case housing; a first recess provided on the upper joint portion of the heat sink or the lower joint portion of the case housing, the first recess being fitted with the first protrusion; a second recess provided in the upper joint portion of the heat sink or the lower joint portion of the case housing, the second recess being fitted into the second protrusion, The first recess has a depth shallower than a height of the first protrusion, The second recess has a depth shallower than a height of the second protrusion, The adhesive is applied to the outer side of the second protrusion.

6. a third protrusion provided at a position outside the second protrusion and at the upper joint portion of the heat sink or the lower joint portion of the case housing; a third recess that is fitted with the third protrusion and is provided on the upper joint portion of the heat sink or the lower joint portion of the case housing, the third recess having a depth shallower than a height of the third protrusion, The semiconductor device according to claim 5 , wherein the adhesive is applied to a region surrounded by the second convex portion and the third convex portion.

7. 7. An inverter device comprising: the semiconductor device according to claim 1; and fins on the heat sink of the semiconductor device.

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