Semiconductor device, manufacturing method thereof, and interlayer insulating film

Abstract

A semiconductor device having excellent adhesion between an interlayer insulating film in a rewiring layer and a sealing material, and a method for manufacturing the same. [Solution] The semiconductor device (1) comprises a semiconductor chip (2), an encapsulant (3) covering the semiconductor chip, and a redistribution layer (4) having an area larger than that of the semiconductor chip in a planar view. The absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the interlayer insulating film of the redistribution layer at a wavelength of 1310 nm is 0.0150 or more. The interlayer insulating film contains at least one material selected from polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group.

Description

[Technical field]

[0001] The present invention relates to a semiconductor device and a manufacturing method thereof. [Background technology]

[0002] There are various methods for packaging semiconductor devices. For example, one of the semiconductor packaging methods is to cover a semiconductor chip with a sealing material (mold resin) to form an element sealing material, and then to form a rewiring layer that electrically connects to the semiconductor chip. Among the semiconductor packaging methods, a semiconductor packaging method called Fan-Out has become mainstream in recent years.

[0003] In a fan-out type semiconductor package, a chip sealing body larger than the chip size of the semiconductor chip is formed by covering the semiconductor chip with an encapsulant. Furthermore, a redistribution layer is formed that extends to the area of ​​the semiconductor chip and the encapsulant. The redistribution layer is formed with a thin film thickness. Furthermore, since the redistribution layer can be formed up to the area of ​​the encapsulant, the number of external connection terminals can be increased.

[0004] For example, a fan-out type semiconductor device is known from Patent Document 1 below. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2011-129767 A Summary of the Invention [Problem to be solved by the invention]

[0006] In fan-out type semiconductor devices, high adhesion is required between the interlayer insulating film in the redistribution layer and the sealing material. However, in conventional fan-out type semiconductor devices, the adhesion between the interlayer insulating film in the redistribution layer and the sealing material is insufficient.

[0007] The present invention has been made in view of the above-mentioned problems, and has an object to provide a semiconductor device having excellent adhesion between an interlayer insulating film in a rewiring layer and a sealing material, and a method for manufacturing the same. [Means for solving the problem]

[0008] One aspect of the present invention is a semiconductor device comprising: a semiconductor chip; Contact a sealing material and a rewiring layer having an area larger than that of the semiconductor chip in a plan view; the sealing material has a portion in direct contact with the interlayer insulating film of the redistribution layer; The interlayer insulating film of the redistribution layer is characterized in that the absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index at a wavelength of 1310 nm is 0.0150 or more.

[0009] The present invention One aspect of the interlayer insulating film is an interlayer insulating film for use in forming the redistribution layer in a semiconductor device comprising a semiconductor chip, a sealing material in contact with the semiconductor chip, and a redistribution layer having an area larger than that of the semiconductor chip in a planar view, the interlayer insulating film being in direct contact with the sealing material, and characterized in that the absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the interlayer insulating film of the redistribution layer at a wavelength of 1310 nm is 0.0150 or more.

[0010] In one aspect of the semiconductor device of the present invention, the sealing material preferably contains an epoxy resin.

[0011] In one aspect of the semiconductor device of the present invention, the interlayer insulating film preferably contains at least one selected from the group consisting of polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group.

[0012] In one aspect of the semiconductor device of the present invention, the interlayer insulating film preferably contains a polyimide having a structure represented by the following general formula (1):

[0013] [ka] (In general formula (1), X 1 is a tetravalent organic group, and Y 1 is a divalent organic group, and m is an integer of 1 or more.

[0014] In one embodiment of the semiconductor device of the present invention, X in the general formula (1) 1 is a tetravalent organic group containing an aromatic ring, and Y in the general formula (1) 1is preferably a divalent organic group containing an aromatic ring.

[0015] In one embodiment of the semiconductor device of the present invention, X in the general formula (1) 1 It is preferable that the compound contains at least one structure represented by the following general formula (2) to general formula (4).

[0016] [ka]

[0017] [ka]

[0018] [ka] (In general formula (4), R9 is an oxygen atom, a sulfur atom, or a divalent organic group.)

[0019] In one embodiment of the semiconductor device of the present invention, X in the general formula (1) 1 It is preferable that the compound contains a structure represented by the following general formula (5).

[0020] [ka]

[0021] In one embodiment of the semiconductor device of the present invention, Y in the general formula (1) 1 It is preferable that the compound contains at least one structure represented by the following general formula (6) to general formula (8).

[0022] [ka] (R 10 , R 11 , R 12 and R 13 are hydrogen atoms, monovalent aliphatic groups having 1 to 5 carbon atoms, or hydroxyl groups, and may be the same or different.

[0023] [ka] (R 14 ~R 21 are hydrogen atoms, halogen atoms, monovalent organic groups having 1 to 5 carbon atoms, or hydroxyl groups, and may be different from each other or the same.)

[0024] [ka] (R 22 is a divalent group, R 23 ~R 30 are hydrogen atoms, halogen atoms, monovalent aliphatic groups having 1 to 5 carbon atoms, or hydroxyl groups, and may be the same or different.

[0025] In one embodiment of the semiconductor device of the present invention, Y in the general formula (1) 1 It is preferable that the compound contains a structure represented by the following general formula (9).

[0026] [ka]

[0027] In one embodiment of the semiconductor device of the present invention, the interlayer insulating film preferably contains a polybenzoxazole having a structure represented by the following general formula (10).

[0028] [ka] (In general formula (10), U and V are divalent organic groups.)

[0029] In one embodiment of the semiconductor device of the present invention, U in the general formula (10) is preferably a divalent organic group having 1 to 30 carbon atoms.

[0030] In one embodiment of the semiconductor device of the present invention, U in the general formula (10) is preferably a chain alkylene group having 1 to 8 carbon atoms in which some or all of the hydrogen atoms have been substituted with fluorine atoms.

[0031] In one embodiment of the semiconductor device of the present invention, V in the general formula (10) is preferably a divalent organic group containing an aromatic group.

[0032] In one embodiment of the semiconductor device of the present invention, V in the general formula (10) preferably includes at least one structure represented by the following general formulae (6) to (8).

[0033] [ka] (R 10 , R 11 , R 12 and R 13 are hydrogen atoms or monovalent aliphatic groups having 1 to 5 carbon atoms, and may be the same or different.

[0034] [ka] (R 14 ~R 21 are hydrogen atoms, halogen atoms, or monovalent organic groups having 1 to 5 carbon atoms, and may be different or the same.)

[0035] [ka] (R 22 is a divalent group, R 23 ~R 30 are hydrogen atoms, halogen atoms, or monovalent aliphatic groups having 1 to 5 carbon atoms, and may be the same or different.

[0036] In one embodiment of the semiconductor device of the present invention, V in the general formula (10) preferably includes a structure represented by the following general formula (9).

[0037] [ka]

[0038] In one embodiment of the semiconductor device of the present invention, V in the general formula (10) is preferably a divalent organic group having 1 to 40 carbon atoms.

[0039] In one embodiment of the semiconductor device of the present invention, V in the general formula (10) is preferably a divalent chain aliphatic group having 1 to 20 carbon atoms.

[0040] In one aspect of the semiconductor device of the present invention, the polymer having a phenolic hydroxyl group preferably includes a novolac phenol resin.

[0041] In one aspect of the semiconductor device of the present invention, the polymer having a phenolic hydroxyl group preferably contains a phenol resin having no unsaturated hydrocarbon group and a modified phenol resin having an unsaturated hydrocarbon group.

[0042] In one embodiment of the semiconductor device of the present invention, when the redistribution layer is viewed in cross section, it is preferable that the redistribution layer includes a first interlayer insulating film layer, a second interlayer insulating film layer, and an intermediate layer that is a layer different from the first interlayer insulating film layer and the second interlayer insulating film layer and is provided between the first interlayer insulating film layer and the second interlayer insulating film layer.

[0043] In one embodiment of the semiconductor device of the present invention, it is preferable that the first interlayer insulating film layer is in contact with the sealing material, and the absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the first interlayer insulating film layer is 0.0150 or more.

[0044] In one embodiment of the semiconductor device of the present invention, the second interlayer insulating film layer preferably has a different composition from the first interlayer insulating film layer.

[0045] In one embodiment of the semiconductor device of the present invention, it is preferable that the absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the second interlayer insulating film layer is different from the absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the first interlayer insulating film layer.

[0046] In one aspect of the semiconductor device of the present invention, the semiconductor device is preferably a fan-out type wafer level chip size package type semiconductor device.

[0047] In one aspect of the semiconductor device of the present invention, it is preferable that the absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the interlayer insulating film of the redistribution layer is 0.0155 or more.

[0048] In one aspect of the semiconductor device of the present invention, it is preferable that the absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the interlayer insulating film of the redistribution layer is 0.0160 or more.

[0049] In one aspect of the semiconductor device of the present invention, it is preferable that the absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the interlayer insulating film of the redistribution layer is 0.0165 or more.

[0050] In one aspect of the semiconductor device of the present invention, it is preferable that the absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the interlayer insulating film of the redistribution layer is 0.0170 or more.

[0051] In one aspect of the semiconductor device of the present invention, it is preferable that the absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the interlayer insulating film of the redistribution layer is 0.0200 or more.

[0052] In one aspect of the semiconductor device of the present invention, it is preferable that the absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the interlayer insulating film of the redistribution layer is 0.50 or less.

[0053] In one aspect of the semiconductor device of the present invention, it is preferable that the absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the interlayer insulating film of the redistribution layer is 0.40 or less.

[0054] In one aspect of the semiconductor device of the present invention, it is preferable that the absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the interlayer insulating film of the redistribution layer is 0.30 or less.

[0055] One aspect of the method for manufacturing a semiconductor device of the present invention includes a step of covering a semiconductor chip with an encapsulant, and a step of forming a redistribution layer having an area larger than that of the semiconductor chip in a plan view and including an interlayer insulating film, The absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the interlayer insulating film is 0.0150 or more.

[0056] In one embodiment of the method for producing a semiconductor device of the present invention, it is preferable to include an interlayer insulating film formation step of forming the interlayer insulating film from a photosensitive resin composition capable of forming at least one compound selected from the group consisting of polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group.

[0057] In one aspect of the method for manufacturing a semiconductor device of the present invention, the interlayer insulating film forming step preferably includes a step of forming the interlayer insulating film from the photosensitive resin composition adjusted with an additive so that the absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the interlayer insulating film is 0.0150 or more. Effect of the Invention

[0058] According to the present invention, it is possible to provide a semiconductor device having excellent adhesion between an interlayer insulating film in a rewiring layer and a sealing material, and a method for manufacturing the same. [Brief description of the drawings]

[0059] [Figure 1] 1 is a schematic cross-sectional view of a semiconductor device according to an embodiment of the present invention; [Diagram 2] 1 is a schematic plan view of a semiconductor device according to an embodiment of the present invention; [Diagram 3] 1 is a diagram showing an example of a manufacturing process of the semiconductor device according to the present embodiment. [Figure 4] This is a comparison diagram between flip-chip BGA and fan-out type WLCSP. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0060] Hereinafter, an embodiment of the semiconductor device of the present invention (hereinafter, abbreviated as "embodiment") will be described in detail with reference to the drawings. Note that the present invention is not limited to the following embodiment, and various modifications can be made within the scope of the gist of the present invention.

[0061] (Semiconductor Device) Fig. 1 is a schematic cross-sectional view of the semiconductor device of the present embodiment. As shown in Fig. 1, the semiconductor device (semiconductor IC) 1 includes a semiconductor chip 2, a sealing material (mold resin) 3 that covers the semiconductor chip 2, and a rewiring layer 4 that is in close contact with the semiconductor chip 2 and the sealing material 3.

[0062] As shown in FIG. 1, the sealing material 3 covers the surface of the semiconductor chip 2 and is formed to have an area larger than the region of the semiconductor chip 2 in a plan view (as viewed from the direction of arrow A).

[0063] The redistribution layer 4 is composed of a plurality of wires 5 electrically connected to a plurality of terminals 2a provided on the semiconductor chip 2, and an interlayer insulating film 6 filling the spaces between the wires 5. The plurality of terminals 2a provided on the semiconductor chip 2 and the wires 5 in the redistribution layer 4 are electrically connected. One end of the wires 5 is connected to the terminals 2a, and the other end is connected to an external connection terminal 7. The wires 5 between the terminals 2a and the external connection terminal 7 are covered entirely with the interlayer insulating film 6.

[0064] As shown in Fig. 1, in plan view (as viewed by arrow A), the redistribution layer 4 is formed to be larger than the semiconductor chip 2. The semiconductor device 1 shown in Fig. 1 is a fan-out type wafer-level chip size package (WLCSP) type semiconductor device. In a fan-out type semiconductor device, the interlayer insulating film 6 in the redistribution layer 4 is in close contact with not only the semiconductor chip 2 but also the encapsulant 3. The semiconductor chip 2 is made of a semiconductor such as silicon, and has a circuit formed therein.

[0065] (Rewiring layer) The redistribution layer 4 is mainly composed of the wiring 5 and an interlayer insulating film 6 that covers the periphery of the wiring 5. From the viewpoint of preventing unintended electrical connection with the wiring 5, the interlayer insulating film 6 is preferably made of a material with high insulating properties.

[0066] Here, the "rewiring layer 4" in this embodiment is a thin film layer having wiring 5 and interlayer insulating film 6 as described above, and does not include an interposer or a printed wiring board. Fig. 4 is a comparison diagram between a flip-chip BGA and a fan-out type WLCSP. Since the semiconductor device (semiconductor IC) 1 (see Fig. 1) uses the rewiring layer 4, as shown in Fig. 4, it is thinner than a semiconductor device using an interposer such as a flip-chip BGA.

[0067] In this embodiment, the thickness of the redistribution layer 4 can be about 3 to 30 μm. The thickness of the redistribution layer 4 may be 1 μm or more, 5 μm or more, or 10 μm or more. The thickness of the redistribution layer 4 may be 40 μm or less, 30 μm or less, or 20 μm or less. stomach.

[0068] When the semiconductor device 1 is viewed from above (as viewed from the direction of arrow A), it appears as shown in the following Fig. 2. Fig. 2 is a schematic plan view of the semiconductor device of this embodiment. Note that the sealing material 3 is omitted.

[0069] The semiconductor device 1 shown in FIG. 2 (see FIG. 1) is configured so that the area S1 of the redistribution layer 4 is larger than the area S2 of the semiconductor chip 2. There is no particular limitation on the area S1 of the redistribution layer 4, but from the viewpoint of increasing the number of external connection terminals, the area S1 of the redistribution layer 4 is preferably 1.05 times or more, more preferably 1.1 times or more, more preferably 1.2 times or more, and particularly preferably 1.3 times or more, of the area S2 of the semiconductor chip 2. There is no particular limitation on the upper limit, but the area S1 of the redistribution layer 4 may be 50 times or less, 25 times or less, 10 times or less, or 5 times or less of the area S2 of the semiconductor chip 2. In FIG. 2, the area S1 of the redistribution layer 4 includes the area of ​​the part of the redistribution layer 4 covered by the semiconductor chip 2.

[0070] In addition, the external shapes of the semiconductor chip 2 and the redistribution layer 4 may be the same or different. In Fig. 2, the external shapes of the semiconductor chip 2 and the redistribution layer 4 are both similar rectangular shapes, but the shape may be other than rectangular.

[0071] The redistribution layer 4 may be a single layer or a multi-layer structure of two or more layers. The redistribution layer 4 includes the wiring 5 and the interlayer insulating film 6 filling the spaces between the wiring 5, but the redistribution layer 4 may include a layer composed only of the interlayer insulating film 6 or a layer composed only of the wiring 5.

[0072] The wiring 5 is not particularly limited as long as it is made of a highly conductive material, but copper is generally used.

[0073] (Sealing material) The material of the sealing material 3 is not particularly limited, but epoxy resin is preferable from the viewpoints of heat resistance and adhesion to the interlayer insulating film.

[0074] 1, it is preferable that the encapsulant 3 be in direct contact with the semiconductor chip 2 and the rewiring layer 4. This makes it possible to effectively improve the encapsulation performance from the surface of the semiconductor chip 2 to the surface of the rewiring layer 4.

[0075] The sealing material 3 may be a single layer or may have a structure in which multiple layers are laminated. When the sealing material 3 has a laminated structure, it may be a laminated structure of the same type of material or a laminated structure of different materials.

[0076] (Interlayer insulating film) This embodiment is characterized in that the difference between the in-plane refractive index and the out-of-plane refractive index of the interlayer insulating film 6 is 0.0150 or more. Here, the in-plane refractive index is the average value of the refractive indexes at a wavelength of 1310 nm in the x and y directions of the interlayer insulating film 6 having a thickness z, width x, and length y. The out-of-plane refractive index is the refractive index at a wavelength of 1310 nm in the z direction. Hereinafter, the absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index at a wavelength of 1310 nm is referred to as the refractive index difference.

[0077] The width x direction of the interlayer insulating film 6 is the planar direction of the interlayer insulating film 6 in FIG. 2, the length y direction is the planar direction of the interlayer insulating film 6 in FIG. 2 and a direction perpendicular to the width x direction, and the thickness z direction is the direction perpendicular to the width x direction and the length y direction.

[0078] When the refractive index difference is 0.0150 or more, the interlayer insulating film 6 and the sealing material 3 have excellent adhesion after chemical treatment. Although the reason for this is not clear, the present inventors speculate as follows.

[0079] In the manufacturing process of a fan-out type semiconductor device 1 (see FIG. 1), a photosensitive resin composition is applied onto a chip sealing body composed of a semiconductor chip 2 and a sealing material 3 in order to form a rewiring layer 4. The photosensitive resin composition is then exposed to light including i-rays. The photosensitive resin composition is then developed and cured to selectively form a portion with and without the cured product of the photosensitive resin composition. The cured product of the photosensitive resin composition becomes an interlayer insulating film 6. Also, wiring 5 is formed in the portion without the cured product of the photosensitive resin composition. Usually, the rewiring layer 4 is often multi-layered. That is, a photosensitive resin composition is further applied, exposed, developed, and cured on the interlayer insulating film 6 and wiring 5, and wiring is also formed. In the process of forming the interlayer insulating film 6 and the process of forming the wiring 5, various chemicals are used.

[0080] In an interlayer insulating film 6 with a small refractive index difference, the polymer molecular chains are not properly aligned in the in-plane direction, and the intermolecular force is weak. Therefore, an interlayer insulating film 6 with a small refractive index difference has many gaps between the polymer molecular chains, and is easily permeated with chemicals. The chemicals that have permeated the interlayer insulating film 6 cause the sealing material 3 to deteriorate, cracks to form, and peeling occurs between the interlayer insulating film 6 and the sealing material 3, resulting in a decrease in adhesion. In particular, epoxy resins are easily deteriorated by chemicals. Therefore, it is considered that when epoxy resin is used as the sealing material 3, the decrease in adhesion between the interlayer insulating film 6 and the sealing material 3 after chemical treatment is accelerated.

[0081] The interlayer insulating film 6 of this embodiment has a large refractive index difference of 0.0150 or more. Therefore, in this embodiment, it is presumed that a chemical solution is unlikely to penetrate into the interlayer insulating film 6, deterioration of the sealing material 3 is unlikely to occur, and adhesion between the interlayer insulating film 6 and the sealing material 3 can be improved.

[0082] It is possible to prevent the seepage of the chemical solution into the sealing material 3 by thickening the interlayer insulating film 6. However, this has the disadvantage of increasing the thickness of the entire semiconductor device 1. The semiconductor device 1 of the present embodiment has excellent adhesion between the interlayer insulating film 6 in the redistribution layer 4 and the sealing material 3 without increasing the thickness of the entire semiconductor device 1.

[0083] From the viewpoint of adhesion between the interlayer insulating film 6 and the sealing material 3 after chemical treatment, the refractive index difference of the interlayer insulating film 6 is preferably 0.0150 or more, preferably 0.0155 or more, preferably 0.0160 or more, preferably 0.0165 or more, preferably 0.0170 or more, preferably 0.0175 or more, preferably 0.0180 or more, preferably 0.0185 or more, preferably 0.0190 or more, preferably 0.0195 or more, preferably 0.0200 or more, preferably 0.0210 or more, preferably 0.0220 or more, preferably 0.0230 or more, preferably 0.0240 or more, preferably 0.0250 or more, preferably 0.0260 or more, and preferably 0. It is preferable that the molecular weight is 0.0270 or more, preferably 0.0280 or more, preferably 0.0290 or more, preferably 0.0300 or more, preferably 0.0320 or more, preferably 0.0340 or more, preferably 0.0360 or more, preferably 0.0380 or more, preferably 0.040 or more, preferably 0.042 or more, preferably 0.044 or more, preferably 0.046 or more, preferably 0.048 or more, preferably 0.050 or more, preferably 0.055 or more, preferably 0.060 or more, preferably 0.070 or more, preferably 0.080 or more, preferably 0.090 or more, preferably 0.10 or more.

[0084] In addition, there is no particular limit to the upper limit of the refractive index difference of the interlayer insulating film 6, but it may be 0.50 or less, 0.40 or less, 0.30 or less, 0.20 or less, 0.10 or less, 0.08 or less, 0.06 or less, or 0.04 or less.

[0085] The interlayer insulating film 6 in the rewiring layer 4 may be multi-layered. When the line layer 4 is viewed in cross section, the first interlayer insulating film layer, the second interlayer insulating film layer, and the first interlayer insulating film layer are arranged in a cross section. The first interlayer insulating film layer and the second interlayer insulating film layer are different layers from the insulating film layer and the second interlayer insulating film layer. The film may include an intermediate layer provided between the film layers, for example, a wiring 5.

[0086] The first interlayer insulating film layer and the second interlayer insulating film layer may have the same composition or different compositions. The first interlayer insulating film layer and the second interlayer insulating film layer may have the same refractive index difference or different refractive index differences. The first interlayer insulating film layer and the second interlayer insulating film layer may have the same film thickness or different film thicknesses. If the first interlayer insulating film layer and the second interlayer insulating film layer have different compositions, different refractive index differences, or different film thicknesses, it is possible to impart different properties to each interlayer insulating film layer, which is preferable.

[0087] When the interlayer insulating film 6 is multi-layered, it is sufficient that the refractive index difference of at least one of the multiple layers is 0.0150 or more, but it is preferable that the refractive index difference of the interlayer insulating film layer in contact with the sealing material 3 (first interlayer insulating film layer) is 0.0150 or more. If the refractive index difference of the interlayer insulating film layer in contact with the sealing material 3 is 0.0150 or more, deterioration of the sealing material can be efficiently prevented when forming an interlayer insulating film layer that is not in contact with the sealing material 3. The preferable range of the refractive index difference of each interlayer insulating film layer is the same as the preferable range of the refractive index difference of the interlayer insulating film 6.

[0088] (Composition of Interlayer Insulating Film) The composition of the interlayer insulating film 6 is not particularly limited, but it is preferable that the interlayer insulating film 6 is a film containing at least one compound selected from, for example, polyimide, polybenzoxazole, or a polymer having a phenolic hydroxyl group.

[0089] (Resin composition for forming interlayer insulating film) The resin composition used to form the interlayer insulating film 6 is not particularly limited as long as it is a photosensitive resin composition, but is preferably a photosensitive resin composition containing at least one compound selected from a polyimide precursor, a polybenzoxazole precursor, or a polymer having a phenolic hydroxyl group. The resin composition used to form the interlayer insulating film 6 may be in the form of a liquid or a film. In addition, the resin composition used to form the interlayer insulating film 6 may be a negative photosensitive resin composition or a positive photosensitive resin composition.

[0090] In this embodiment, the pattern obtained after exposing and developing the photosensitive resin composition is referred to as a relief pattern, and the relief pattern cured by heating is referred to as a cured relief pattern. This cured relief pattern becomes the interlayer insulating film 6.

[0091] <Polyimide precursor composition> (A) Photosensitive resin Examples of the photosensitive resin used in the polyimide precursor composition include polyamide, polyamic acid ester, etc. For example, the polyamic acid ester may be a polyamic acid ester containing a repeating unit represented by the following general formula (11).

[0092] [ka] R 1 and R 2 are each independently a hydrogen atom, a saturated aliphatic group having 1 to 30 carbon atoms, an aromatic group, a monovalent organic group having a carbon-carbon unsaturated double bond, or a monovalent ion having a carbon-carbon unsaturated double bond. 1 is a tetravalent organic group, and Y 1 is a divalent organic group, and m is an integer of 1 or greater. m is preferably 2 or greater, and more preferably 5 or greater.

[0093] In the above general formula (11), R 1 and R 2 When exists as a monovalent cation, O carries a negative charge (-O - (It exists as X. 1and Y 1 may contain a hydroxyl group.

[0094] R in general formula (11) 1 and R 2 is more preferably a structure having an ammonium ion at the terminal of a monovalent organic group represented by the following general formula (12) or a monovalent organic group represented by the following general formula (13).

[0095] [ka] (In general formula (12), R3, R4, and R5 each independently represent a hydrogen atom or an organic group having 1 to 5 carbon atoms, and m1 represents an integer of 1 to 20.)

[0096] [ka] (In general formula (13), R6, R7, and R8 each independently represent a hydrogen atom or an organic group having 1 to 5 carbon atoms, and m2 represents an integer of 1 to 20.)

[0097] A plurality of polyamic acid esters represented by the general formula (11) may be mixed, or a polyamic acid ester obtained by copolymerizing two or more polyamic acid esters represented by the general formula (11) may be used.

[0098] X 1 However, from the viewpoint of adhesion between the interlayer insulating film 6 and the sealing material 3, X 1 is preferably a tetravalent organic group containing an aromatic group. 1 is preferably a tetravalent organic group containing at least one structure represented by the following general formulae (2) to (4).

[0099] [ka]

[0100] [ka]

[0101] [ka] (In general formula (4), R9 is an oxygen atom, a sulfur atom, or a divalent organic group.)

[0102] In the general formula (4), R9 is, for example, a divalent organic group having 1 to 40 carbon atoms or a halogen atom. R9 may contain a hydroxyl group.

[0103] From the viewpoint of adhesion between the interlayer insulating film 6 and the sealing material 3, X 1 is particularly preferably a tetravalent organic group containing a structure represented by the following general formula (5).

[0104] [ka]

[0105] Y 1 However, from the viewpoint of adhesion between the interlayer insulating film 6 and the sealing material 3, Y 1 is preferably a divalent organic group containing an aromatic group. 1 is preferably a divalent organic group containing at least one structure represented by the following general formulae (6) to (8).

[0106] [ka] (R 10 , R 11 , R 12 and R 13 are hydrogen atoms or monovalent aliphatic groups having 1 to 5 carbon atoms, and may be the same or different.

[0107] [ka] (R 14 ~R 21are hydrogen atoms, halogen atoms, or monovalent organic groups having 1 to 5 carbon atoms, and may be different or the same.)

[0108] [ka] (R 22 is a divalent group, R 23 ~R 30 are hydrogen atoms, halogen atoms, or monovalent aliphatic groups having 1 to 5 carbon atoms, and may be the same or different.

[0109] R in general formula (8) 22 is, for example, a divalent organic group having 1 to 40 carbon atoms or a halogen atom.

[0110] From the viewpoint of adhesion between the interlayer insulating film 6 and the sealing material 3, Y 1 is particularly preferably a divalent organic group containing a structure represented by the following general formula (9).

[0111] [ka]

[0112] In the polyamic acid ester, X in the repeating unit 1 is derived from the tetracarboxylic dianhydride used as the raw material, and Y 1 is derived from the diamine used as a raw material.

[0113] Examples of tetracarboxylic dianhydrides used as raw materials include, but are not limited to, pyromellitic anhydride, diphenylether-3,3',4,4'-tetracarboxylic dianhydride, benzophenone-3,3',4,4'-tetracarboxylic dianhydride, biphenyl-3,3',4,4'-tetracarboxylic dianhydride, diphenylsulfone-3,3',4,4'-tetracarboxylic dianhydride, diphenylmethane-3,3',4,4'-tetracarboxylic dianhydride, 2,2-bis(3,4-phthalic anhydride)propane, 2,2-bis(3,4-phthalic anhydride)-1,1,1,3,3,3-hexafluoropropane, etc. These may be used alone or in combination of two or more.

[0114] Examples of diamines used as raw materials include p-phenylenediamine, m-phenylenediamine, 4,4'-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, 3,3'-diaminodiphenyl ether, 4,4'-diaminodiphenyl sulfide, 3,4'-diaminodiphenyl sulfide, 3,3'-diaminodiphenyl sulfide, 4,4'-diaminodiphenyl sulfone, 3,4'-diaminodiphenyl sulfone, and 3,3'-diaminodiphenyl. sulfone, 4,4'-diaminobiphenyl, 3,4'-diaminobiphenyl, 3,3'-diaminobiphenyl, 4,4'-diaminobenzophenone, 3,4'-diaminobenzophenone, 3,3'-diaminobenzophenone, 4,4'-diaminodiphenylmethane, 3,4'-diaminodiphenylmethane, 3,3'-diaminodiphenylmethane, 1,4-bis(4-aminophenoxy)benzene, 1,3-bis(4-aminophenoxy)benzene, 1,3-bis(3-amino phenoxy)benzene, bis[4-(4-aminophenoxy)phenyl]sulfone, bis[4-(3-aminophenoxy)phenyl]sulfone, 4,4-bis(4-aminophenoxy)biphenyl, 4,4-bis(3-aminophenoxy)biphenyl, bis[4-(4-aminophenoxy)phenyl]ether, bis[4-(3-aminophenoxy)phenyl]ether, 1,4-bis(4-aminophenyl)benzene, 1,3-bis(4-aminophenyl)benzene, 9,1 Examples of the aryl group include 0-bis(4-aminophenyl)anthracene, 2,2-bis(4-aminophenyl)propane, 2,2-bis(4-aminophenyl)hexafluoropropane, 2,2-bis[4-(4-aminophenoxy)phenyl]propane, 2,2-bis[4-(4-aminophenoxy)phenyl]hexafluoropropane, 1,4-bis(3-aminopropyldimethylsilyl)benzene, ortho-tolidine sulfone, and 9,9-bis(4-aminophenyl)fluorene. In addition, some of the hydrogen atoms on the benzene ring may be substituted. In addition, these may be used alone or in combination of two or more.

[0115] In the synthesis of the polyamic acid ester (A), a method can be preferably used in which a tetracarboxylic acid diester obtained by an esterification reaction of a tetracarboxylic acid dianhydride, which will be described later, is directly subjected to a condensation reaction with a diamine.

[0116] The alcohols used in the esterification reaction of the tetracarboxylic dianhydride are alcohols having an olefinic double bond. Specific examples include, but are not limited to, 2-hydroxyethyl methacrylate, 2-methacryloyloxyethyl alcohol, glycerin diacrylate, and glycerin dimethacrylate. These alcohols can be used alone or in combination of two or more.

[0117] A specific synthesis method for the polyamic acid ester (A) used in this embodiment can employ a conventionally known method. For example, the synthesis method can be the method shown in International Publication No. 00 / 43439. That is, a method can be mentioned in which a tetracarboxylic acid diester is first converted into a tetracarboxylic acid diester diacid chloride, and the tetracarboxylic acid diester diacid chloride and a diamine are subjected to a condensation reaction in the presence of a basic compound to produce the polyamic acid ester (A). Another example can be a method in which a tetracarboxylic acid diester and a diamine are subjected to a condensation reaction in the presence of an organic dehydrating agent to produce the polyamic acid ester (A).

[0118] Examples of organic dehydrating agents include dicyclohexylcarbodiimide (DCC), diethylcarbodiimide, diisopropylcarbodiimide, ethylcyclohexylcarbodiimide, diphenylcarbodiimide, 1-ethyl-3-(3-dimethylaminopropyl)carbodiimide, 1-cyclohexyl-3-(3-dimethylaminopropyl)carbodiimide hydrochloride, and the like.

[0119] The weight average molecular weight of the polyamic acid ester (A) used in the present embodiment is preferably 6,000 to 150,000, more preferably 7,000 to 50,000, and even more preferably 7,000 to 20,000.

[0120] (B1) Photoinitiator When the resin composition used to form the interlayer insulating film 6 is a negative photosensitive resin, a photoinitiator is added. Examples of photoinitiators include benzophenone, o-benzoylbenzoic acid methyl, 4-benzoyl-4'-methyldiphenyl ketone, dibenzyl ketone, fluorenone, and other benzophenone derivatives, 2,2'-diethoxyacetophenone, 2-hydroxy-2-methylpropiophenone, and other acetophenone derivatives, 1-hydroxycyclohexylphenyl ketone, thioxanthone, 2-methylthioxanthone, 2-isopropylthioxanthone, diethylthioxanthone, and other thioxanthone derivatives, benzil, benzil dimethyl ketal, and benzyl-β-methoxyethyl acetal, and other benzyl derivatives, benzoin methyl ether, and other benzoin derivatives, 2,6-di(4'-diazidobenzal)-4-methylcyclohexanoate ... Examples of the compounds that can be used include azides such as 2,6'-di(4'-diazidobenzal)cyclohexanone, 1-phenyl-1,2-butanedione-2-(O-methoxycarbonyl)oxime, 1-phenylpropanedione-2-(O-methoxycarbonyl)oxime, 1-phenylpropanedione-2-(O-ethoxycarbonyl)oxime, 1-phenylpropanedione-2-(O-benzoyl)oxime, 1,3-diphenylpropanetrione-2-(O-ethoxycarbonyl)oxime, 1-phenyl-3-ethoxypropanetrione-2-(O-benzoyl)oxime, and other oximes, N-arylglycines such as N-phenylglycine, peroxides such as benzoyl peroxide, aromatic biimidazoles, and titanocenes. Among these, the above-mentioned oximes are preferred in terms of photosensitivity.

[0121] The amount of the photoinitiator added is preferably 1 to 40 parts by mass, more preferably 2 to 20 parts by mass, based on 100 parts by mass of the polyamic acid ester (A). By adding 1 part by mass or more of the photoinitiator based on 100 parts by mass of the polyamic acid ester (A), excellent photosensitivity is achieved. Furthermore, by adding 40 parts by mass or less, excellent thick-film curing properties are achieved.

[0122] (B2) Photoacid generator When the resin composition used to form the interlayer insulating film 6 is a positive-type photosensitive resin, a photoacid generator is added. By including a photoacid generator, acid is generated in the ultraviolet-exposed area, and the solubility of the exposed area in an alkaline aqueous solution increases. This allows the composition to be used as a positive-type photosensitive resin composition.

[0123] Examples of photoacid generators include quinone diazide compounds, sulfonium salts, phosphonium salts, diazonium salts, and iodonium salts. Among these, quinone diazide compounds are preferably used because they exhibit excellent dissolution suppression effects and can provide a highly sensitive positive-type photosensitive resin composition. In addition, two or more types of photoacid generators may be contained.

[0124] (C) Additives The difference between the in-plane and out-of-plane refractive index of the interlayer insulating film 6 can be adjusted by the type and amount of additive. When an additive that interacts with the polymer molecular chains and has a highly planar structure is used, the molecular chains tend to align in the in-plane direction, and the difference between the in-plane and out-of-plane refractive index can be increased. Examples of additives that increase the refractive index difference include N-(4-bromophenyl)phthalimide, N-(4-chlorophenyl)phthalimide, and biphenyl. The amount of additive may be adjusted appropriately depending on the target difference between the in-plane and out-of-plane refractive index.

[0125] (D) Solvent There is no particular limitation as long as the solvent can dissolve or disperse each component. Examples include N-methyl-2-pyrrolidone, γ-butyrolactone, acetone, methyl ethyl ketone, dimethyl sulfoxide, etc. These solvents can be used in the range of 30 to 1500 parts by mass per 100 parts by mass of the photosensitive resin (A) depending on the coating film thickness and viscosity.

[0126] (E) Other The polyimide precursor composition may contain a crosslinking agent. As the crosslinking agent, a crosslinking agent capable of crosslinking the (A) photosensitive resin or capable of forming a crosslinked network by itself can be used when the polyimide precursor composition is exposed to light, developed, and then heat-cured. By using the crosslinking agent, the heat resistance and chemical resistance of the cured film (interlayer insulating film) can be further enhanced.

[0127] In addition, the resin may contain a sensitizer for improving photosensitivity, an adhesion aid for improving adhesion to a substrate, and the like.

[0128] (developing) After the polyimide precursor composition is exposed to light, unnecessary parts are washed away with a developer. There are no particular limitations on the developer used, but in the case of a polyimide precursor composition that is developed with a solvent, good solvents such as N,N-dimethylformamide, dimethylsulfoxide, N,N-dimethylacetamide, N-methyl-2-pyrrolidone, cyclopentanone, γ-butyrolactone, and acetate esters, and mixed solvents of these good solvents with poor solvents such as lower alcohols, water, and aromatic hydrocarbons are used. After development, rinse washing is performed with a poor solvent, etc., as necessary.

[0129] In the case of a polyimide precursor composition that is developed with an alkaline aqueous solution, preferred are aqueous solutions of compounds that exhibit alkalinity, such as an aqueous solution of tetramethylammonium hydroxide, diethanolamine, diethylaminoethanol, sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate, triethylamine, diethylamine, methylamine, dimethylamine, dimethylaminoethyl acetate, dimethylaminoethanol, dimethylaminoethyl methacrylate, cyclohexylamine, ethylenediamine, and hexamethylenediamine.

[0130] (thermal curing) After development, the exposed polyimide precursor composition is heated to close the ring of the polyimide precursor and form a polyimide. This polyimide becomes the cured relief pattern, that is, the interlayer insulating film 6.

[0131] The heating temperature for thermal curing of the polyimide precursor composition is not particularly limited, but generally, the higher the heat curing temperature, the larger the refractive index difference tends to be. From the viewpoint of expressing the refractive index difference of 0.0150 or more in this embodiment, the heating temperature is preferably 160°C or more, more preferably 180°C or more, and particularly preferably 200°C or more. From the viewpoint of the influence on other members, 400°C or less is preferable.

[0132] <Polyimide> The structure of the cured relief pattern formed from the polyimide precursor composition is represented by the following general formula (1).

[0133] [ka]

[0134] X in general formula (1) 1 , Y 1 , m is X in general formula (11) 1 , Y 1 , m, and X 1 is a tetravalent organic group, and Y 1 is a divalent organic group, and m is an integer of 1 or more. 1, Y 1 For the same reason, m is also preferred in the polyimide of general formula (1).

[0135] In the case of an alkali-soluble polyimide, the polyimide may be terminated with a hydroxyl group.

[0136] <Polybenzoxazole Precursor Composition> (A) Photosensitive resin As the photosensitive resin used in the polybenzoxazole precursor composition, a poly(o-hydroxyamide) containing a repeating unit represented by the following general formula (14) can be used.

[0137] [ka] (In general formula (14), U and V are divalent organic groups.)

[0138] From the viewpoint of adhesion between the interlayer insulating film 6 and the sealing material 3, U is preferably a divalent organic group having 1 to 30 carbon atoms, more preferably a chain alkylene group having 1 to 15 carbon atoms (however, the hydrogen atoms of the chain alkylene may be substituted with halogen atoms), and particularly preferably a chain alkylene group having 1 to 8 carbon atoms and some or all of the hydrogen atoms being substituted with fluorine atoms.

[0139] In addition, from the viewpoint of adhesion between the interlayer insulating film 6 and the sealing material 3, V is preferably a divalent organic group containing an aromatic group, and more preferably a divalent organic group containing at least one structure represented by the following general formulas (6) to (8).

[0140] [ka] (R 10 , R 11 , R 12 and R 13 are hydrogen atoms or monovalent aliphatic groups having 1 to 5 carbon atoms, and may be the same or different.

[0141] [ka] (R 14 ~R 21 are hydrogen atoms, halogen atoms, or monovalent organic groups having 1 to 5 carbon atoms, and may be different or the same.)

[0142] [ka] (R 22 is a divalent group, R 23 ~R 30 are hydrogen atoms, halogen atoms, or monovalent aliphatic groups having 1 to 5 carbon atoms, and may be the same or different.

[0143] R in general formula (8) 22 is, for example, a divalent organic group having 1 to 40 carbon atoms or a halogen atom.

[0144] From the viewpoint of adhesion between the interlayer insulating film 6 and the sealing material 3, V is particularly preferably a divalent organic group containing a structure represented by the following general formula (9).

[0145] [ka]

[0146] From the viewpoint of adhesion between the interlayer insulating film 6 and the sealing material 3, V is preferably a divalent organic group having 1 to 40 carbon atoms, more preferably a divalent chain aliphatic group having 1 to 40 carbon atoms, and particularly preferably a divalent chain aliphatic group having 1 to 20 carbon atoms.

[0147] The polybenzoxazole precursor can generally be synthesized from a dicarboxylic acid derivative and a hydroxyl group-containing diamine. Specifically, the polybenzoxazole precursor can be synthesized by converting the dicarboxylic acid derivative into a dihalide derivative and then reacting it with a diamine. As the dihalide derivative, a dichloride derivative is preferable.

[0148] The dichloride derivative can be synthesized by reacting a dicarboxylic acid derivative with a halogenating agent, such as thionyl chloride, phosphoryl chloride, phosphorus oxychloride, or phosphorus pentachloride, which are commonly used in acid chloride reactions of carboxylic acids.

[0149] The dichloride derivative can be synthesized by reacting a dicarboxylic acid derivative with the above-mentioned halogenating agent in a solvent, or by carrying out the reaction in an excess of the halogenating agent and then distilling off the excess.

[0150] Examples of dicarboxylic acids used in the dicarboxylic acid derivative include isophthalic acid, terephthalic acid, 2,2-bis(4-carboxyphenyl)-1,1,1,3,3,3-hexafluoropropane, 4,4'-dicarboxybiphenyl, 4,4'-dicarboxydiphenyl ether, 4,4'-dicarboxytetraphenylsilane, bis(4-carboxyphenyl)sulfone, 2,2-bis(p-carboxyphenyl)propane, 5-tert-butylisophthalic acid, 5-bromoisophthalic acid, 5-fluoroisophthalic acid, 5-chloroisophthalic acid, 2,6-naphthalenedicarboxylic acid, malonic acid, dimethylmalonic acid, ethylmalonic acid, and the like. Succinic acid, isopropylmalonic acid, di-n-butylmalonic acid, succinic acid, tetrafluorosuccinic acid, methylsuccinic acid, 2,2-dimethylsuccinic acid, 2,3-dimethylsuccinic acid, dimethylmethylsuccinic acid, glutaric acid, hexafluoroglutaric acid, 2-methylglutaric acid, 3-methylglutaric acid, 2,2-dimethylglutaric acid, 3,3-dimethylglutaric acid, 3-ethyl-3-methylglutaric acid, adipic acid, octafluoroadipic acid, 3-methyladipic acid, octafluoroadipic acid, pimelic acid, 2,2,6,6-tetramethylpimelic acid, suberic acid, dodecafluorosuberic acid, azelaic acid, sebacic acid Examples of the acid include hexadecafluorosebacic acid, 1,9-nonanedioic acid, dodecanedioic acid, tridecanedioic acid, tetradecanedioic acid, pentadecanedioic acid, hexadecanedioic acid, heptadecanedioic acid, octadecanedioic acid, nonadecanedioic acid, eicosanediacid, heneicosanediacid, docosanediacid, tricosanediacid, tetracosanediacid, pentacosanediacid, hexacosanediacid, heptacosanediacid, octacosanediacid, nonacosanediacid, triacontanedioic acid, hentriacontanedioic acid, dotriacontanedioic acid, and diglycolic acid. These may be used in combination.

[0151] Examples of hydroxyl group-containing diamines include 3,3'-diamino-4,4'-dihydroxybiphenyl, 4,4'-diamino-3,3'-dihydroxybiphenyl, bis(3-amino-4-hydroxyphenyl)propane, bis(4-amino-3-hydroxyphenyl)propane, bis(3-amino-4-hydroxyphenyl)sulfone, bis(4-amino-3-hydroxyphenyl)sulfone, 2,2-bis(3-amino-4-hydroxyphenyl)-1,1,1,3,3,3-hexafluoropropane, 2,2-bis(4-amino-3-hydroxyphenyl)-1,1,1,3,3,3-hexafluoropropane, etc. These may be used in combination.

[0152] (B2) Photoacid generator The photoacid generator has a function of increasing the solubility of the light-irradiated portion in an alkaline aqueous solution. Examples of the photoacid generator include diazonaphthoquinone compounds, aryl diazonium salts, diaryliodonium salts, and triaryl sulfonium salts. Among these, diazonaphthoquinone compounds are preferred because of their high sensitivity.

[0153] (C) Additives The preferred types and amounts of additives are the same as those described in the section on the polyimide precursor composition.

[0154] (D) Solvent There are no particular limitations on the solvent as long as it can dissolve or disperse each component.

[0155] (E) Other The polybenzoxazole precursor composition may contain a crosslinker, a sensitizer, an adhesion promoter, a thermal acid generator, and the like.

[0156] (developing) After the polybenzoxazole precursor composition is exposed to light, unnecessary portions are washed away with a developer. The developer to be used is not particularly limited, but examples of the developer include aqueous alkali solutions such as sodium hydroxide, potassium hydroxide, sodium silicate, ammonia, ethylamine, diethylamine, triethylamine, triethanolamine, and tetramethylammonium hydroxide.

[0157] Although the above description has focused on positive-type polybenzoxazole precursor compositions, negative-type polybenzoxazole precursor compositions may also be used.

[0158] (thermal curing) After development, the polybenzoxazole precursor composition is heated to close the ring of the polybenzoxazole precursor and form polybenzoxazole, which becomes the cured relief pattern, i.e., the interlayer insulating film 6.

[0159] The heating temperature for thermal curing of the polybenzoxazole precursor composition is not particularly limited, but from the viewpoint of the influence on other members, the heating temperature is preferably low, and the heating temperature is preferably 250° C. or less, more preferably 230° C. or less, more preferably 200° C. or less, and particularly preferably 180° C. or less.

[0160] <Polybenzoxazole> The structure of the cured relief pattern formed from the polybenzoxazole precursor composition is represented by the following general formula (10).

[0161] [ka]

[0162] U and V in the general formula (10) are the same as U and V in the general formula (14). For the same reason, the preferred U and V in the general formula (14) are also preferred in the polybenzoxazole of the general formula (10).

[0163] <Polymer having phenolic hydroxyl group> (A) Photosensitive resin It is a resin having a phenolic hydroxyl group in the molecule and is soluble in alkali. Specific examples include vinyl polymers containing monomer units having a phenolic hydroxyl group, such as poly(hydroxystyrene), phenolic resins, poly(hydroxyamide), poly(hydroxyphenylene) ether, and polynaphthol.

[0164] Among these, phenolic resins are preferred because of their low cost and small volumetric shrinkage during curing, and novolac-type phenolic resins are particularly preferred.

[0165] Phenolic resins are polycondensation products of phenol or its derivatives with aldehydes. The polycondensation is carried out in the presence of a catalyst such as an acid or a base. Phenolic resins obtained using an acid catalyst are called novolak-type phenolic resins.

[0166] Examples of phenol derivatives include phenol, cresol, ethylphenol, propylphenol, butylphenol, amylphenol, benzylphenol, adamantanephenol, benzyloxyphenol, xylenol, catechol, resorcinol, ethylresorcinol, hexylresorcinol, hydroquinone, pyrogallol, phloroglucinol, 1,2,4-trihydroxybenzene, pararosolic acid, biphenol, bisphenol A, bisphenol AF, bisphenol B, bisphenol F, and bisphenol S. , dihydroxydiphenylmethane, 1,1-bis(4-hydroxyphenyl)cyclohexane, 1,4-bis(3-hydroxyphenoxybenzene), 2,2-bis(4-hydroxy-3-methylphenyl)propane, α,α'-bis(4-hydroxyphenyl)-1,4-diisopropylbenzene, 9,9-bis(4-hydroxy-3-methylphenyl)fluorene, 2,2-bis(3-cyclohexyl-4-hydroxyphenyl)propane, 2,2-bis(2-hydroxy-5-biphenylyl)propane, and dihydroxybenzoic acid.

[0167] Examples of aldehyde compounds include formaldehyde, paraformaldehyde, acetaldehyde, propionaldehyde, pivalaldehyde, butyraldehyde, pentanal, hexanal, trioxane, glyoxal, cyclohexylaldehyde, diphenylacetaldehyde, ethylbutyraldehyde, benzaldehyde, glyoxylic acid, 5-norbornene-2-carboxaldehyde, malondialdehyde, succindialdehyde, glutaraldehyde, salicylaldehyde, naphthaldehyde, and terephthalaldehyde.

[0168] The component (A) preferably contains (a) a phenolic resin having no unsaturated hydrocarbon groups and (b) a modified phenolic resin having an unsaturated hydrocarbon group. The component (b) is more preferably further modified by reaction of the phenolic hydroxyl group with a polybasic acid anhydride.

[0169] From the viewpoint of further improving the mechanical properties (elongation at break, elastic modulus, and residual stress), it is preferable to use a phenol resin modified with a compound having an unsaturated hydrocarbon group having 4 to 100 carbon atoms as the component (b).

[0170] (b) The modified phenolic resin having an unsaturated hydrocarbon group is generally a reaction product of phenol or a derivative thereof with a compound having an unsaturated hydrocarbon group (preferably having 4 to 100 carbon atoms) (hereinafter sometimes simply referred to as an "unsaturated hydrocarbon group-containing compound") (hereinafter referred to as an "unsaturated hydrocarbon group-modified phenol derivative") and an aldehyde, or a reaction product of a phenolic resin and an unsaturated hydrocarbon group-containing compound.

[0171] The phenol derivatives used here may be the same as those described above as the raw material for the phenol resin as component (A).

[0172] From the viewpoints of adhesion and thermal shock resistance of a resist pattern, the unsaturated hydrocarbon group of the unsaturated hydrocarbon group-containing compound preferably contains two or more unsaturated groups. From the viewpoints of compatibility when made into a resin composition and flexibility of a cured film, the unsaturated hydrocarbon group-containing compound preferably has 8 to 80 carbon atoms, more preferably has 10 to 60 carbon atoms.

[0173] Examples of the unsaturated hydrocarbon group-containing compound include unsaturated hydrocarbons having 4 to 100 carbon atoms, polybutadiene having a carboxyl group, epoxidized polybutadiene, linoleyl alcohol, oleyl alcohol, unsaturated fatty acids, and unsaturated fatty acid esters. Suitable unsaturated fatty acids include crotonic acid, myristoleic acid, palmitoleic acid, oleic acid, elaidic acid, vaccenic acid, gadoleic acid, erucic acid, nervonic acid, linoleic acid, α-linolenic acid, eleostearic acid, stearidonic acid, arachidonic acid, eicosapentaenoic acid, sardine acid, and docosahexaenoic acid. Among these, esters of unsaturated fatty acids having 8 to 30 carbon atoms and monohydric to trihydric alcohols having 1 to 10 carbon atoms are more preferred, and esters of unsaturated fatty acids having 8 to 30 carbon atoms and glycerin, which is a trihydric alcohol, are particularly preferred.

[0174] Esters of unsaturated fatty acids having 8 to 30 carbon atoms and glycerin are commercially available as vegetable oils. Vegetable oils include non-drying oils with an iodine value of 100 or less, semi-drying oils with an iodine value of more than 100 and less than 130, and drying oils with an iodine value of 130 or more. Examples of non-drying oils include olive oil, morning glory seed oil, cashew seed oil, camellia oil, camellia oil, castor oil, and peanut oil. Examples of semi-drying oils include corn oil, cottonseed oil, and sesame oil. Examples of drying oils include tung oil, linseed oil, soybean oil, walnut oil, safflower oil, sunflower oil, perilla oil, and mustard oil. In addition, processed vegetable oils obtained by processing these vegetable oils may be used.

[0175] Among the above vegetable oils, it is preferable to use non-drying oils in order to prevent gelation caused by excessive reaction in the reaction between phenol or its derivatives or phenol resin and vegetable oil, and to improve yield.On the other hand, it is preferable to use drying oils in order to improve the adhesion, mechanical properties and thermal shock resistance of the resist pattern.Among the drying oils, tung oil, linseed oil, soybean oil, walnut oil and safflower oil are preferable, and tung oil and linseed oil are more preferable, because they can more effectively and reliably exhibit the effects of the present invention.

[0176] These unsaturated hydrocarbon group-containing compounds may be used alone or in combination of two or more.

[0177] In preparing the component (b), first, the phenol derivative and the unsaturated hydrocarbon group-containing compound are reacted to prepare an unsaturated hydrocarbon group-modified phenol derivative. The reaction is preferably carried out at 50 to 130°C. From the viewpoint of improving the flexibility of the cured film (resist pattern), the reaction ratio of the phenol derivative and the unsaturated hydrocarbon group-containing compound is preferably 1 to 100 parts by mass, more preferably 5 to 50 parts by mass, of the unsaturated hydrocarbon group-containing compound per 100 parts by mass of the phenol derivative. If the amount of the unsaturated hydrocarbon group-containing compound is less than 1 part by mass, the flexibility of the cured film tends to decrease, and if it exceeds 100 parts by mass, the heat resistance of the cured film tends to decrease. In the above reaction, p-toluenesulfonic acid, trifluoromethanesulfonic acid, or the like may be used as a catalyst as necessary.

[0178] The unsaturated hydrocarbon group-modified phenol derivative produced by the above reaction is polycondensed with aldehydes to produce a phenol resin modified with an unsaturated hydrocarbon group-containing compound. The aldehydes may be the same as those mentioned above for obtaining the phenol resin.

[0179] The reaction between the aldehydes and the unsaturated hydrocarbon group-modified phenol derivative is a polycondensation reaction, and conventionally known synthesis conditions for phenolic resins can be used. The reaction is preferably carried out in the presence of a catalyst such as an acid or a base, and more preferably an acid catalyst is used. Examples of the acid catalyst include hydrochloric acid, sulfuric acid, formic acid, acetic acid, p-toluenesulfonic acid, and oxalic acid. These acid catalysts can be used alone or in combination of two or more.

[0180] The reaction is preferably carried out at a reaction temperature of 100 to 120°C. The reaction time varies depending on the type and amount of the catalyst used, but is usually 1 to 50 hours. After the reaction is completed, the reaction product is dehydrated under reduced pressure at a temperature of 200°C or less to obtain a phenolic resin modified with an unsaturated hydrocarbon group-containing compound. In addition, a solvent such as toluene, xylene, or methanol can be used for the reaction.

[0181] The phenol resin modified with an unsaturated hydrocarbon group-containing compound can also be obtained by polycondensing the above-mentioned unsaturated hydrocarbon group-modified phenol derivative with an aldehyde together with a compound other than phenol such as m-xylene. In this case, the molar ratio of the compound other than phenol to the compound obtained by reacting the phenol derivative with the unsaturated hydrocarbon group-containing compound is preferably less than 0.5.

[0182] The component (b) can also be obtained by reacting the phenolic resin of the component (a) with a compound containing an unsaturated hydrocarbon group.

[0183] The unsaturated hydrocarbon group-containing compound to be reacted with the phenol resin may be the same as the unsaturated hydrocarbon group-containing compound described above.

[0184] The reaction between the phenolic resin and the unsaturated hydrocarbon group-containing compound is preferably carried out at 50 to 130°C. In addition, the reaction ratio between the phenolic resin and the unsaturated hydrocarbon group-containing compound is preferably 1 to 100 parts by mass of the unsaturated hydrocarbon group-containing compound relative to 100 parts by mass of the phenolic resin, more preferably 2 to 70 parts by mass, and even more preferably 5 to 50 parts by mass, from the viewpoint of improving the flexibility of the cured film (resist pattern). If the amount of the unsaturated hydrocarbon group-containing compound is less than 1 part by mass, the flexibility of the cured film tends to decrease, and if it exceeds 100 parts by mass, the possibility of gelation during the reaction tends to increase, and the heat resistance of the cured film tends to decrease. At this time, p-toluenesulfonic acid, trifluoromethanesulfonic acid, or the like may be used as a catalyst as necessary. In addition, a solvent such as toluene, xylene, methanol, or tetrahydrofuran can be used for the reaction.

[0185] The phenolic hydroxyl groups remaining in the phenolic resin modified by the unsaturated hydrocarbon group-containing compound produced by the above method are further reacted with a polybasic acid anhydride. This allows the acid-modified phenolic resin to be used as component (b). By acid-modifying with a polybasic acid anhydride, a carboxyl group is introduced, further improving the solubility of component (b) in an alkaline aqueous solution (developer).

[0186] The polybasic acid anhydride is not particularly limited as long as it has an acid anhydride group formed by dehydration condensation of the carboxyl groups of a polybasic acid having a plurality of carboxyl groups. Examples of the polybasic acid anhydride include dibasic acid anhydrides such as phthalic anhydride, succinic anhydride, octenyl succinic anhydride, pentadodecenyl succinic anhydride, maleic anhydride, itaconic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, nadic anhydride, 3,6-endomethylenetetrahydrophthalic anhydride, methylendomethylenetetrahydrophthalic anhydride, tetrabromophthalic anhydride and trimellitic anhydride, biphenyltetracarboxylic dianhydride, naphthalenetetracarboxylic dianhydride, diphenylethertetracarboxylic dianhydride, butanetetracarboxylic dianhydride, cyclopentanetetracarboxylic dianhydride, pyromellitic anhydride and benzophenonetetracarboxylic dianhydride. These may be used alone or in combination of two or more. Among these, the polybasic acid anhydride is preferably a dibasic acid anhydride, more preferably one or more selected from the group consisting of tetrahydrophthalic anhydride, succinic anhydride, and hexahydrophthalic anhydride. In this case, there is an advantage that a resist pattern having a better shape can be formed.

[0187] In addition, the alkali-soluble resin (A) having a phenolic hydroxyl group can further contain a phenolic resin that has been acid-modified by reacting it with a polybasic acid anhydride. When the component (A) contains a phenolic resin that has been acid-modified with a polybasic acid anhydride, the solubility of the component (A) in an aqueous alkali solution (developer) is further improved.

[0188] Examples of the polybasic acid anhydride include dibasic acid anhydrides such as phthalic anhydride, succinic anhydride, octenyl succinic anhydride, pentadodecenyl succinic anhydride, maleic anhydride, itaconic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, methyl tetrahydrophthalic anhydride, methyl hexahydrophthalic anhydride, nadic anhydride, 3,6-endo methylene tetrahydrophthalic anhydride, methyl end methylene tetrahydrophthalic anhydride, tetrabromo phthalic anhydride, and trimellitic anhydride, and aliphatic and aromatic tetrabasic acid dianhydrides such as biphenyl tetracarboxylic acid dianhydride, naphthalene tetracarboxylic acid dianhydride, diphenyl ether tetracarboxylic acid dianhydride, butane tetracarboxylic acid dianhydride, cyclopentane tetracarboxylic acid dianhydride, pyromellitic anhydride, and benzophenone tetracarboxylic acid dianhydride. These may be used alone or in combination of two or more. Among these, the polybasic acid anhydride is preferably a dibasic acid anhydride, and more preferably, for example, one or more selected from the group consisting of tetrahydrophthalic anhydride, succinic anhydride, and hexahydrophthalic anhydride.

[0189] (B2) Photoacid generator Examples of the photoacid generator include diazonaphthoquinone compounds, aryl diazonium salts, diaryliodonium salts, triarylsulfonium salts, etc. Among these, diazonaphthoquinone compounds are preferred because of their high sensitivity.

[0190] (C) Additives The preferred types and amounts of additives are the same as those described in the section on the polyimide precursor composition.

[0191] (D) Solvent There are no particular limitations on the solvent as long as it can dissolve or disperse each component.

[0192] (E) Other It may contain a thermal crosslinking agent, a sensitizer, an adhesive assistant, a dye, a surfactant, a dissolution promoter, a crosslinking promoter, etc. Among these, by containing a thermal crosslinking agent, when the photosensitive resin film after pattern formation is heated and cured, the thermal crosslinking agent component reacts with the (A) component to form a crosslinked structure. This allows curing at a low temperature, and prevents the film from becoming brittle or melting. Specifically, the thermal crosslinking agent component may preferably be a compound having a phenolic hydroxyl group, a compound having a hydroxymethylamino group, or a compound having an epoxy group.

[0193] (developing) After the polymer having a phenolic hydroxyl group is exposed to light, unnecessary portions are washed away with a developer. There are no particular limitations on the developer used, but for example, an alkaline aqueous solution of sodium hydroxide, potassium hydroxide, sodium silicate, ammonia, ethylamine, diethylamine, triethylamine, triethanolamine, tetramethylammonium hydroxide (TMAH), or the like is preferably used.

[0194] (thermal curing) After development, the polymer having a phenolic hydroxyl group is heated to thermally crosslink the polymers having a phenolic hydroxyl group. The crosslinked polymer becomes a cured relief pattern, that is, an interlayer insulating film 6.

[0195] The heating temperature for thermal curing of the polymer having a phenolic hydroxyl group is not particularly limited, but from the viewpoint of the influence on other members, the heating temperature is preferably low, and the heating temperature is preferably 250° C. or less, more preferably 230° C. or less, more preferably 200° C. or less, and particularly preferably 180° C. or less.

[0196] (Method of manufacturing a semiconductor device) The manufacturing method of the semiconductor device in this embodiment will be described with reference to FIG. 3. FIG. 3 shows an example of the manufacturing process of the semiconductor device in this embodiment. In FIG. 3A, a pre-processed wafer 10 is prepared. Then, in FIG. 3B, the pre-processed wafer 10 is diced to form a plurality of semiconductor chips 2. The semiconductor chips 2 may be purchased. The semiconductor chips 2 thus prepared are attached at predetermined intervals on a support 11 as shown in FIG. 3C.

[0197] Next, the molding resin 12 is applied from above the semiconductor chip 2 to above the support 11, and mold sealing is performed as shown in FIG. 3D. Next, the support 11 is peeled off, and the molding resin 12 is inverted (see FIG. 3E). As shown in FIG. 3E, the semiconductor chip 2 and the molding resin 12 appear on approximately the same plane. Next, in the process shown in FIG. 3F, a photosensitive resin composition 13 is applied onto the semiconductor chip 2 and the molding resin 12. Then, the applied photosensitive resin composition 13 is exposed and developed to form a relief pattern (relief pattern forming process). The photosensitive resin composition 13 may be either a positive type or a negative type. Furthermore, the relief pattern is heated to form a cured relief pattern (interlayer insulating film forming process). Furthermore, wiring is formed in the places where the cured relief pattern is not formed (wiring forming process).

[0198] In this embodiment, the above-mentioned relief pattern forming step, interlayer insulating film forming step, and wiring forming step are combined into a rewiring layer forming step for forming a rewiring layer connected to the semiconductor chip 2.

[0199] The interlayer insulating film in the rewiring layer may be multi-layered, and therefore the rewiring layer forming process may include a relief pattern forming process multiple times, an interlayer insulating film forming process multiple times, and a wiring forming process multiple times.

[0200] Then, in Fig. 3G, a plurality of external connection terminals 7 corresponding to each semiconductor chip 2 are formed (bump formation), and dicing is performed between each semiconductor chip 2. This makes it possible to obtain a semiconductor device (semiconductor IC) 1 as shown in Fig. 3H. In this embodiment, a plurality of fan-out type semiconductor devices 1 can be obtained by the manufacturing method shown in Fig. 3.

[0201] In this embodiment, the refractive index difference of the cured relief pattern (interlayer insulating film) formed through the above process can be 0.0150 or more. Here, the i-line transmittance of the interlayer insulating film can be adjusted by the amount of additive.

[0202] In the present embodiment, in the above-mentioned interlayer insulating film forming step, it is preferable to form the interlayer insulating film from a photosensitive resin composition capable of forming at least one compound selected from the group consisting of polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group. EXAMPLES

[0203] Examples performed to clarify the effects of the present invention will now be described. In the examples, the following materials and measurement methods were used.

[0204] Examples performed to clarify the effects of the present invention will now be described.

[0205] (Polymer A-1: ​​Synthesis of polyimide precursor) 4,4'-oxydiphthalic dianhydride (ODPA) was placed in a 2-liter separable flask as a tetracarboxylic dianhydride. 2-Hydroxyethyl methacrylate (HEMA) and γ-butyrolactone were then added and stirred at room temperature, and pyridine was added while stirring to obtain a reaction mixture. After the heat generated by the reaction had ceased, the mixture was allowed to cool to room temperature and left to stand for 16 hours.

[0206] Next, under ice cooling, a solution of dicyclohexylcarbodiimide (DCC) dissolved in γ-butyrolactone was added to the reaction mixture over 40 minutes while stirring. Next, a suspension of 4,4'-diaminodiphenyl ether (DADPE) as a diamine in γ-butyrolactone was added over 60 minutes while stirring. After further stirring at room temperature for 2 hours, ethyl alcohol was added and stirred for 1 hour, and then γ-butyrolactone was added. The precipitate formed in the reaction mixture was removed by filtration to obtain a reaction liquid.

[0207] The obtained reaction solution was added to ethyl alcohol to produce a precipitate consisting of a crude polymer. The produced crude polymer was filtered off and dissolved in tetrahydrofuran to obtain a crude polymer solution. The obtained crude polymer solution was dropped into water to precipitate the polymer, and the resulting precipitate was filtered off and then vacuum dried to obtain a powdered polymer (polyimide precursor (polymer A-1)). The masses of the compounds used in component A-1 are shown in Table 1 below.

[0208] (Synthesis of Polymers A-2 to A-4) The reaction was carried out in the same manner as in the above-mentioned Polymer A-1, except that the tetracarboxylic dianhydride and diamine were changed as shown in Table 1 below, to obtain polyimide precursors (Polymers A-2 to A-4).

[0209] (Polymer B-1: Synthesis of polybenzoxazole precursor) In a 0.5-liter flask equipped with a stirrer and a thermometer, 15.48 g of 4,4'-diphenyl ether dicarboxylic acid and N-methylpyrrolidone were charged as dicarboxylic acid. After cooling the flask to 5°C, thionyl chloride was dropped and reacted for 30 minutes to obtain a solution of dicarboxylic acid chloride. Next, N-methylpyrrolidone was charged in a 0.5-liter flask equipped with a stirrer and a thermometer. After stirring and dissolving 18.30 g of bis(3-amino-4-hydroxyphenyl)hexafluoropropane and 2.18 g of m-aminophenol as bisaminophenol, pyridine was added. Then, while keeping the temperature at 0 to 5°C, the solution of dicarboxylic acid chloride was dropped over 30 minutes, and stirring was continued for 30 minutes. The solution was poured into 3 liters of water, and the precipitate was collected, washed three times with pure water, and then dried under reduced pressure to obtain a polymer (polybenzoxazole precursor (polymer B-1)). The masses of the compounds used in polymer B-1 are as shown in Table 1 below.

[0210] (Synthesis of Polymers B-2 to B-3) The reaction was carried out in the same manner as in the method for polymer B-1 described above, except that the dicarboxylic acid and bisaminophenol were changed as shown in Table 1 below, to obtain polybenzoxazole precursors (polymers B-2 to B-3).

[0211] [Table 1]

[0212] [Examples 1 to 9, Comparative Examples 1 to 2] A solution of a photosensitive resin composition was obtained by mixing the ingredients as shown in Table 2 below. The units in Table 2 are parts by mass.

[0213] Using the compounds shown in Table 2 in the amounts shown in Tables 3 and 4, photosensitive resin compositions of Examples 1 to 9 and Comparative Examples 1 and 2 were prepared.

[0214] The prepared photosensitive resin composition was subjected to (1) a refractive index difference measurement test, (2) a crack resistance test after chemical treatment, and (3) a test of adhesion to a sealing material after chemical treatment. The results of each test are shown in Tables 3 and 4 below.

[0215] (1) Refractive index difference measurement test A fan-out type wafer-level chip size package type semiconductor device was fabricated using the photosensitive resin composition prepared in the examples and comparative examples. An interlayer insulating film having a thickness of 10 μm was removed as cleanly as possible from the fabricated semiconductor device. The difference between the in-plane refractive index and the out-of-plane refractive index of the removed interlayer insulating film was measured using a prism coupler device (PC-2010) manufactured by METRICON at a measurement wavelength of 1310 nm.

[0216] (2) Crack resistance test after chemical treatment As an epoxy-based encapsulant, Nagase Chemtex Corporation's R4000 series was prepared. Next, the encapsulant was spin-coated onto an aluminum-sputtered silicone wafer to a thickness of approximately 150 μm, and then thermally cured at 130° C. to harden the epoxy-based encapsulant. The photosensitive resin compositions prepared in the Examples and Comparative Examples were applied onto the above-mentioned epoxy-based cured film to a final film thickness of 10 μm. The applied photosensitive resin compositions were applied at 200 mJ / cm for Examples 1 to 4 and 8 and Comparative Example 1. 2 , Examples 5 to 7, 9, and Comparative Example 2 are 500 mJ / cm 2 After the entire surface was exposed under the above exposure conditions, it was thermally cured at 200° C. for 2 hours to form a first cured film having a thickness of 10 μm.

[0217] A chemical solution (DYNASTRIP AP7880-T, manufactured by Dynaloy) that had been preheated to 50° C. was dropped onto the cured film side of the above test piece, and after 5 minutes, it was washed with water and dried.

[0218] The test piece was cut into cross sections using a FIB device (JIB-4000, manufactured by JEOL Ltd.), and the presence or absence of cracks in the epoxy part was checked to evaluate the degree of deterioration. Those with no visible cracks were marked with an O, and those with at least one crack were marked with an X.

[0219] (3) Adhesion test with sealing material after chemical treatment A pin was placed on the photosensitive resin cured film of the sample prepared in the test (2), and an adhesion test was performed using a pull tester (Quad Group, Sebastian Model 5). Evaluation: Adhesive strength 70MPa or more.....Adhesion strength ◎ 50MPa or more - less than 70MPa...Adhesion strength: Yes 30MPa or more - less than 50MPa...Adhesion strength △ Less than 30MPa...Adhesion strength ×

[0220] [Table 2]

[0221] [Table 3]

[0222] [Table 4]

[0223] As is clear from Tables 3 and 4, the results of tests (1) to (3) performed on the photosensitive resin compositions of Examples 1 to 9 confirmed that when the refractive index difference was 0.0150 or more, no cracks were observed in the epoxy portion in the crack resistance test after chemical treatment, and the adhesion strength was evaluated as ◎, ○, or △ in the adhesion test with the sealing material after chemical treatment.

[0224] On the other hand, as is clear from Tables 3 and 4, from the results of tests (1) to (3) performed on the photosensitive resin compositions of Comparative Examples 1 and 2, when the refractive index difference was less than 0.0150, cracks were observed in the epoxy part in the crack resistance test after the chemical treatment, and the adhesion was evaluated as × in the adhesion test with the sealing material after the chemical treatment.

[0225] Furthermore, when a fan-out type wafer-level chip size package type semiconductor device containing an epoxy resin in the molding resin was fabricated using the photosensitive resin compositions of Examples 1 to 9, it operated without any problems. [Industrial Applicability]

[0226] The present invention is preferably applied to a semiconductor device having a semiconductor chip and a rewiring layer connected to the semiconductor chip, and in particular to a fan-out type wafer level chip size package type semiconductor device. [Explanation of symbols]

[0227] 1 Semiconductor device 2. Semiconductor chips 3. Encapsulating material 4 Redistribution layer 5. Wiring 6 Interlayer insulating film 7 External connection terminal 10 Wafers 11 Support 12 Molding resin 13 Photosensitive resin composition

Claims

1. A semiconductor chip; a sealing material in contact with the semiconductor chip; a redistribution layer having an area larger than that of the semiconductor chip in a plan view; the sealing material has a portion in direct contact with the interlayer insulating film of the redistribution layer; The absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the interlayer insulating film of the redistribution layer at a wavelength of 1310 nm is 0.0150 or more. A semiconductor device comprising:

2. A semiconductor chip; a sealing material in contact with the semiconductor chip; In a semiconductor device including a redistribution layer having an area larger than that of the semiconductor chip in a plan view, an interlayer insulating film used for forming the redistribution layer, in direct contact with the encapsulant; The absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the interlayer insulating film of the redistribution layer at a wavelength of 1310 nm is 0.0150 or more. An interlayer insulating film characterized by:

3. 3. The semiconductor device or the interlayer insulating film according to claim 1, wherein the sealing material contains an epoxy resin.

4. 4. The semiconductor device or the interlayer insulating film according to claim 1, wherein the interlayer insulating film contains at least one selected from the group consisting of polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group.

5. 5. The semiconductor device or the interlayer insulating film according to claim 4, wherein the interlayer insulating film contains a polyimide having a structure represented by the following general formula (1): 【Chemistry 1】 (In general formula (1), X １ is a tetravalent organic group, Y １ is a divalent organic group, and m is an integer of 1 or more.

6. X in the general formula (1) １ is a tetravalent organic group containing an aromatic ring, and Y in the general formula (1) １ 6. The semiconductor device or interlayer insulating film according to claim 5, wherein: is a divalent organic group containing an aromatic ring.

7. X in the general formula (1) １ The semiconductor device or interlayer insulating film according to claim 5 or 6, characterized in that it contains at least one structure represented by the following general formula (2) to general formula (4): 【Chemistry 2】 【Chemistry 3】 【Chemistry 4】 (In general formula (4), R 9 is an oxygen atom, a sulfur atom, or a divalent organic group.

8. X in the general formula (1) １ The semiconductor device or interlayer insulating film according to claim 7, characterized in that it contains a structure represented by the following general formula (5): 【Chemistry 5】

9. Y in the general formula (1) １ The semiconductor device or interlayer insulating film according to any one of claims 5 to 8, characterized in that it contains at least one structure represented by the following general formulas (6) to (8): 【Chemistry 6】 (R １０ , R １１ , R １２ and R １３ are hydrogen atoms, monovalent aliphatic groups having 1 to 5 carbon atoms, or hydroxyl groups, and may be the same or different. 【Chemistry 7】 (R １４ ~R ２１ are hydrogen atoms, halogen atoms, monovalent organic groups having 1 to 5 carbon atoms, or hydroxyl groups, and may be different or the same. 【Chemistry 8】 (R ２２ is a divalent group, R ２３ ~R ３０ are hydrogen atoms, halogen atoms, monovalent aliphatic groups having 1 to 5 carbon atoms, or hydroxyl groups, and may be the same or different.

10. Y in the general formula (1) １ The semiconductor device or interlayer insulating film according to claim 9 , characterized in that it contains a structure represented by the following general formula (9): 【Chemistry 9】

11. 5. The semiconductor device or the interlayer insulating film according to claim 4, wherein the interlayer insulating film contains a polybenzoxazole having a structure represented by the following general formula (10): 【Chemistry 10】 (In general formula (10), U and V are divalent organic groups.)

12. 12. The semiconductor device or interlayer insulating film according to claim 11, wherein U in the general formula (10) is a divalent organic group having 1 to 30 carbon atoms.

13. 13. The semiconductor device or interlayer insulating film according to claim 12, wherein U in the general formula (10) is a chain alkylene group having 1 to 8 carbon atoms and in which some or all of the hydrogen atoms are substituted with fluorine atoms.

14. 14. The semiconductor device or interlayer insulating film according to claim 11, wherein V in the general formula (10) is a divalent organic group containing an aromatic group.

15. 15. The semiconductor device or interlayer insulating film according to claim 14, wherein V in the general formula (10) includes at least one structure represented by the following general formulas (6) to (8): 【Chemistry 11】 (R １０ , R １１ , R １２ and R １３ are hydrogen atoms or monovalent aliphatic groups having 1 to 5 carbon atoms, and may be the same or different. 【Chemistry 12】 (R １４ ~R ２１ are hydrogen atoms, halogen atoms, or monovalent organic groups having 1 to 5 carbon atoms, and may be different or the same. 【Chemistry 13】 (R ２２ is a divalent group, R ２３ ~R ３０ are hydrogen atoms, halogen atoms, or monovalent aliphatic groups having 1 to 5 carbon atoms, and may be the same or different.

16. 16. The semiconductor device or interlayer insulating film according to claim 15, wherein V in the general formula (10) includes a structure represented by the following general formula (9): 【Chemistry 14】

17. 14. The semiconductor device or interlayer insulating film according to claim 11, wherein V in the general formula (10) is a divalent organic group having 1 to 40 carbon atoms.

18. 18. The semiconductor device or interlayer insulating film according to claim 17, wherein V in the general formula (10) is a divalent chain aliphatic group having 1 to 20 carbon atoms.

19. 5. The semiconductor device or interlayer insulating film according to claim 4, wherein the polymer having a phenolic hydroxyl group includes a novolac type phenolic resin.

20. 5. The semiconductor device or interlayer insulating film according to claim 4, wherein the polymer having a phenolic hydroxyl group includes a phenol resin having no unsaturated hydrocarbon group and a modified phenol resin having an unsaturated hydrocarbon group.

21. 21. The semiconductor device or interlayer insulating film according to claim 1, wherein the redistribution layer includes, when viewed in cross section, a first interlayer insulating film layer, a second interlayer insulating film layer, and an intermediate layer that is a layer different from the first interlayer insulating film layer and the second interlayer insulating film layer and is provided between the first interlayer insulating film layer and the second interlayer insulating film layer.

22. 22. The semiconductor device or interlayer insulating film according to claim 21, wherein the first interlayer insulating film layer is in contact with the sealing material, and the absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the first interlayer insulating film layer is 0.0150 or more.

23. 23. The semiconductor device or interlayer insulating film according to claim 21, wherein the second interlayer insulating film layer has a different composition from the first interlayer insulating film layer.

24. 24. The semiconductor device or interlayer insulating film according to claim 21, wherein the absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the second interlayer insulating film layer is different from the absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the first interlayer insulating film layer.

25. 25. The semiconductor device or interlayer insulating film according to claim 1, wherein the semiconductor device is a fan-out type wafer level chip size package type semiconductor device.

26. 26. The semiconductor device or interlayer insulating film according to claim 1, wherein an absolute value of a difference between an in-plane refractive index and an out-of-plane refractive index of the interlayer insulating film of the redistribution layer is 0.0155 or more.

27. 27. The semiconductor device or interlayer insulating film according to claim 26, wherein an absolute value of a difference between an in-plane refractive index and an out-of-plane refractive index of the interlayer insulating film of the redistribution layer is 0.0160 or more.

28. 27. The semiconductor device or interlayer insulating film according to claim 26, wherein an absolute value of a difference between an in-plane refractive index and an out-of-plane refractive index of the interlayer insulating film of the redistribution layer is 0.0165 or more.

29. 27. The semiconductor device or interlayer insulating film according to claim 26, wherein an absolute value of a difference between an in-plane refractive index and an out-of-plane refractive index of the interlayer insulating film of the redistribution layer is 0.0170 or more.

30. 27. The semiconductor device or interlayer insulating film according to claim 26, wherein an absolute value of a difference between an in-plane refractive index and an out-of-plane refractive index of the interlayer insulating film of the redistribution layer is 0.0200 or more.

31. 31. The semiconductor device or interlayer insulating film according to claim 1, wherein an absolute value of a difference between an in-plane refractive index and an out-of-plane refractive index of the interlayer insulating film of the redistribution layer is 0.50 or less.

32. 32. The semiconductor device or interlayer insulating film according to claim 31, wherein the absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the interlayer insulating film of the redistribution layer is 0.40 or less.

33. 32. The semiconductor device or interlayer insulating film according to claim 31, wherein the absolute value of the difference between the in-plane refractive index and the out-of-plane refractive index of the interlayer insulating film of the redistribution layer is 0.30 or less.

34. forming an encapsulant on the semiconductor chip; forming a redistribution layer having an area larger than that of the semiconductor chip in a plan view and including an interlayer insulating film, and at this time, bringing the sealing material into direct contact with the interlayer insulating film of the redistribution layer; a second insulating film having an interlayer insulating film formed on the first insulating film and a second insulating film formed on the second insulating film;

35. 35. The method for manufacturing a semiconductor device according to claim 34, further comprising the step of forming the interlayer insulating film from a photosensitive resin composition capable of forming at least one compound selected from the group consisting of polyimide, polybenzoxazole, and a polymer having a phenolic hydroxyl group.

36. 36. The method for manufacturing a semiconductor device according to claim 35, wherein the interlayer insulating film forming step includes a step of forming the interlayer insulating film from the photosensitive resin composition adjusted with an additive so that an absolute value of a difference between an in-plane refractive index and an out-of-plane refractive index of the interlayer insulating film is 0.0150 or more.

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