Light-emitting device

Abstract

To provide a light-emitting device with high reliability of non-destruction by external local pressure while achieving thinning as one objective, and to manufacture the light-emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacturing process as one objective.SOLUTION: By sealing a light-emitting device with first and second structures having organic resin impregnated in a fiber body, the light-emitting device with high reliability having strength can be provided while achieving thinning. Further, the light-emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacturing process.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a light-emitting device having a light-emitting element that utilizes electroluminescence. The present invention also relates to an electronic device or a lighting device incorporating the light emitting device as a component. [Background technology]

[0002] In recent years, display devices in televisions, mobile phones, digital cameras, etc. have become flat and thin. In order to meet this demand, a self-luminous light-emitting device is required. Display devices that utilize self-luminous light are attracting attention. There are light-emitting devices that use electroluminescence. In this light-emitting element, a light-emitting material is sandwiched between a pair of electrodes, and the light-emitting material is turned on by applying a voltage. It is possible to obtain light emission from the

[0003] These self-luminous light-emitting devices have higher pixel visibility than LCDs, and It has the advantage of not requiring light, making it suitable for use as a flat panel display element. In addition, such self-luminous light-emitting elements have the advantage that they can be thinned and have a very fast response time. Another feature is that it is fast.

[0004] In Patent Document 1, flexible electroluminescence using peeling and transfer technology is A light emitting device has been proposed. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2003-204049 A Summary of the Invention [Problem to be solved by the invention]

[0006] As the market for the above-mentioned light-emitting devices expands, making them thinner has become an important factor in miniaturizing the products. As a result, the range of applications for thin technology and miniaturized products is expanding rapidly. When the semiconductor device is thinned, a layer containing the semiconductor element is transferred onto a plastic film. When a light emitting device is subjected to localized pressure from the outside, it can crack and become malfunctioning.

[0007] Therefore, one aspect of the present invention is to achieve a thin structure while preventing damage caused by local pressure from the outside. Another object of the present invention is to provide a highly reliable light-emitting device. The aim is to prevent defects in shape and characteristics caused by stress and to manufacture light-emitting devices with high yields. This is the target. [Means for solving the problem]

[0008] The light emitting device according to one aspect of the present invention includes a first structure in which a fibrous body is impregnated with an organic resin, and a light emitting element in which a fibrous body is impregnated with an organic resin. A second structure impregnated with an organic resin and a substrate provided between the first structure and the second structure. a light-emitting element, the first structure and the second structure being in contact with each other and fixed to each other at end portions; The light emitting element is sealed.

[0009] The light emitting device according to one aspect of the present invention includes a first structure in which a fibrous body is impregnated with an organic resin, and a light emitting element in which a fibrous body is impregnated with an organic resin. A second structure impregnated with an organic resin and a substrate provided between the first structure and the second structure. A light emitting element and a first structure and a second structure are provided on the surface opposite to the light emitting element. and an impact absorbing layer formed on the first structure and the second structure, the first structure and the second structure being in contact with each other at the end portions. The light emitting element is sealed by bonding.

[0010] In the light-emitting device according to one embodiment of the present invention described above, An insulating layer may be provided between the two structures.

[0011] In the light-emitting device according to one embodiment of the present invention described above, A conductive layer may be provided on the outermost surface opposite to the light emitting element.

[0012] In this specification, a light-emitting element is an element whose luminance is controlled by a current or a voltage. This category includes inorganic EL (Electro Luminescence) e), organic electroluminescence, etc.

[0013] The light-emitting device of one embodiment of the present invention may be a passive matrix type or an active matrix type. In the case of a passive matrix type, a plurality of light emitting elements are connected to the same transistor. In the active matrix type, each light-emitting element is connected to a transistor. The 10-pin connector is connected to the star.

[0014] In this specification, the film thickness of the first structure or the second structure refers to the film thickness of the first structure and From the outermost surface of the element portion sandwiched between the second structures to the surface of the first structure or the second structure It is defined as the distance at

[0015] In addition, terms used in this specification that express a degree, such as "the same" and "to the same extent", It means a reasonable deviation of the terminology that is slightly altered so that the end result does not change significantly. These terms are to be interpreted as including deviations of at least ±5% of any modified terms. should be interpreted in accordance with the principles set forth in the present Convention, provided that this deviation does not negate the meaning of the terms which are somewhat altered. In addition, in this specification, ordinal numbers such as 1st or 2nd are used for convenience. It does not indicate the order of steps or the order of layers. The names are not intended to indicate specific names for the purposes of this document. Effect of the Invention

[0016] The light emitting element is sealed by the first and second structures in which a fibrous body is impregnated with an organic resin. Thus, it is possible to provide a light emitting device that is thin and has strength and high reliability. In addition, in the manufacturing process, defects in shape and characteristics are prevented, and light-emitting devices are manufactured with a high yield. It is possible. [Brief description of the drawings]

[0017] [Figure 1] 1A to 1C illustrate a light-emitting device according to one embodiment of the present invention. [Diagram 2] 1A to 1C illustrate a method for manufacturing a light-emitting device according to one embodiment of the present invention. [Diagram 3] 1A to 1C illustrate a method for manufacturing a light-emitting device according to one embodiment of the present invention. [Figure 4] 1A to 1C illustrate a method for manufacturing a light-emitting device according to one embodiment of the present invention. [Diagram 5] 1A to 1C illustrate a method for manufacturing a light-emitting device according to one embodiment of the present invention. [Figure 6] 1A to 1C illustrate a method for manufacturing a light-emitting device according to one embodiment of the present invention. [Figure 7] 1A to 1C illustrate a method for manufacturing a light-emitting device according to one embodiment of the present invention. [Figure 8] 1A to 1C illustrate a method for manufacturing a light-emitting device according to one embodiment of the present invention. [Figure 9] 1A to 1C illustrate a method for manufacturing a light-emitting device according to one embodiment of the present invention. [Figure 10] 1A to 1C illustrate a method for manufacturing a light-emitting device according to one embodiment of the present invention. [Figure 11] 1A to 1C illustrate a method for manufacturing a light-emitting device according to one embodiment of the present invention. [Figure 12] 1A to 1C illustrate a method for manufacturing a light-emitting device according to one embodiment of the present invention. [Figure 13] 1A to 1C illustrate a method for manufacturing a light-emitting device according to one embodiment of the present invention. [Figure 14] 1A to 1C illustrate a light-emitting device according to one embodiment of the present invention. [Figure 15] 1A to 1C illustrate a light-emitting device according to one embodiment of the present invention. [Figure 16] 1A to 1C illustrate a method for manufacturing a light-emitting device according to one embodiment of the present invention. [Figure 17] 1A to 1C illustrate a method for manufacturing a light-emitting device according to one embodiment of the present invention. [Figure 18] 1A to 1C illustrate a light-emitting device according to one embodiment of the present invention. [Figure 19] 1A to 1C illustrate application examples of a light-emitting device according to one embodiment of the present invention. [Figure 20] 1A to 1C illustrate application examples of a light-emitting device according to one embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0018] The present invention will be described in detail with reference to the accompanying drawings. The present invention is not limited to the above, and various changes and modifications may be made in form and detail without departing from the spirit and scope of the present invention. It will be easily understood by those skilled in the art that the above-mentioned invention can be obtained by the following embodiments. The contents of the description should not be construed as being limited to the above. The same reference numerals are used in different drawings to indicate parts or parts having similar functions, and the repetition of the reference numerals will be used in different drawings. The explanation of the repetition will be omitted.

[0019] (Embodiment 1) In this embodiment, an example of a light-emitting device according to one embodiment of the present invention will be described in detail with reference to FIG. Reveal.

[0020] 1(A) and (B) show a display portion of a light-emitting device according to this embodiment. The light emitting device of the embodiment is a structure sealed between a first structure 132 and a second structure 133. The element portion 170 includes the first structure 132 and the second structure. Between the first structure 13 and the second structure 133, an insulating layer 104 and an insulating layer 138 are formed. The second and second structures 133 are structures in which a fibrous body 132a is impregnated with an organic resin 132b. In addition, the first structure 132 and the second structure 133 are provided with an element portion 170. In the regions where the first structure 132 and the second structure 133 are not in contact with each other (for example, the ends of the first structure 132 and the second structure 133), It is attached and fixed.

[0021] The first structure 132 and the second structure 133 are made of a material having an elastic modulus of 13 GPa or more and a modulus of rupture of It is preferable to use a material having a strength of less than 300 MPa. The structure 133 preferably has a film thickness of 5 μm or more and 50 μm or less. It is preferable that the first structure 132 and the second structure 133 have the same thickness. Since the structure 132 and the second structure 133 have the same film thickness, the element portion 170 emits light. It can be located in the center of the device.

[0022] In the first structure 132 and the second structure 133, the fibrous bodies 132a are arranged at regular intervals. The fabric is woven with warp threads spaced apart at regular intervals and weft threads spaced apart at regular intervals. The woven fiber body has areas where there are no warp or weft threads. 2a, the proportion of the organic resin 132b impregnated therein is increased, and the fibrous body 132a and the light emitting element are closely packed together. It can improve the wearability.

[0023] In addition, the fibrous body 132a has a high density of warp and weft yarns, and the proportion of areas where warp and weft yarns are not present is small. The same applies if the concentration is low.

[0024] In order to increase the penetration rate of the organic resin into the fiber bundle, the fiber may be subjected to a surface treatment. For example, corona discharge treatment and plasma discharge treatment are used to activate the fiber surface. In addition, surface treatments using silane coupling agents and titanate coupling agents are also available.

[0025] The structure in which the fibrous body is impregnated with the organic resin may be laminated in multiple layers. The structure may be formed by stacking a plurality of structures in which a fibrous body of a layer is impregnated with an organic resin. Alternatively, a structure in which a plurality of laminated fibrous bodies are impregnated with an organic resin may be used. When stacking multiple structures in which the fibrous body of a layer is impregnated with an organic resin, another layer is sandwiched between each structure. It is also possible to do so.

[0026] The element portion 170 sealed by the first structure 132 and the second structure 133 is a light-emitting element. A switching element for applying a potential to the light-emitting element 140 is provided. The switching element may be a transistor (e.g., a bipolar transistor, MOS transistors, etc.), diodes (e.g., PN diodes, PIN diodes, Schottky diode, MIM (Metal Insulator Metal) die MIS (Metal Insulator Semiconductor) die A diode-connected transistor, a thyristor, etc. can be used. Alternatively, a logic circuit that combines these elements can be used as a switching element. In this embodiment, a thin film transistor 106 is used as the switching element. In addition, the light emitting device may be an integrated driver type, and the element section 170 may include a drive circuit section. In addition, a driving circuit can also be formed outside the sealed element portion.

[0027] The light-emitting element 140 includes a first electrode 122, an EL layer 134, and a second electrode 136 stacked together. One of the first electrode 122 and the second electrode 136 is used as an anode, The other is used as a cathode.

[0028] The EL layer 134 constituting the light-emitting element has at least a light-emitting layer. In addition to the light-emitting layer, the layer structure includes a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, etc. The EL layer 134 may be made of either a low molecular weight material or a high molecular weight material. The EL layer 134 may be formed from only organic compound materials. The term "composition" includes not only compositions consisting of inorganic compounds but also compositions containing inorganic compounds.

[0029] In addition, when the light-emitting device is used for full-color display, red (R), green (G) and blue (B) The EL layer 134 can be selectively formed using a material that can emit light, and a mono-color display can be achieved. In this case, the EL layer 134 may be formed using a material that exhibits at least one color. The EL layer may be used in combination with a color filter. Even when a color light-emitting layer (eg, a white light-emitting layer) is used, a full color display is possible. For example, by combining an EL layer using a material that emits white light (W) with a color filter, When using a full color filter, the four sub-pixels, including the pixel without a color filter and the RGB pixel, are used. An error display may be performed.

[0030] The light emitting device shown in FIG. 1A has an element portion 170 disposed approximately at the center of the cross section of the light emitting device. In the region where the element section 170 is not provided (for example, the first structure 132 and the second structure At the end of the first structure 132 and the second structure 133, the first structure 132 and the second structure 133 are in contact with each other. The fiber body 132a of the first and second structures is made of high-strength fiber. High strength fibers have a high tensile modulus or Young's modulus. Even if localized pressure such as point pressure or line pressure is applied to the light-emitting device, the high-strength fiber does not stretch and is The force is distributed throughout the fibrous body 132a, and the entire light-emitting device is curved. The pair of structures that sandwich the optical element serve as an impact resistance layer against external forces applied to the light emitting device. As a result, even if a local pressure is applied, the bending of the light-emitting device is The diameter becomes large, and cracks occur in the light emitting element and wiring sealed by the pair of structures. Furthermore, damage to the light emitting device can be reduced.

[0031] Furthermore, by reducing the thickness of element section 170, the light emitting device can be curved. Therefore, the light emitting device of the present embodiment can be adhered to various substrates, and can be applied to substrates having curved surfaces. If the element portion 170 is attached to a surface, a display or lighting device having a curved surface can be realized. By reducing the thickness, the light emitting device can be made lighter.

[0032] In addition, a configuration of the light emitting device of this embodiment, which is different from the configuration shown in FIG. 1(A), is shown in FIG. 1(B). The light-emitting device of this embodiment shown in FIG. 1B is the same as the light-emitting device of this embodiment shown in FIG. In the device, the first structure and the second structure are further provided on the outer side (opposite the light emitting element 140) The first and second shock absorbing layers 103 and 113 are provided on the surfaces of the respective layers. do.

[0033] The impact buffer layer has the effect of diffusing and reducing the force applied to the light emitting device from the outside. As shown in (B), the resistance of the light-emitting device to external forces (also called external stress) The structure functions as an impact resistant layer that absorbs the force of the impact, and the impact absorbing layer that absorbs the force is provided. This can reduce the force locally applied to the light emitting device, thereby improving the strength of the light emitting device. Therefore, it is possible to prevent damage and defective characteristics.

[0034] The first impact absorbing layer 103 and the second impact absorbing layer 113 are formed by the first structure 132 and the second structure It is preferable that the elastic modulus is lower and the breaking strength is higher than that of the structure 133. For example, the first impact The buffer layer 103 and the second impact buffer layer 113 have an elastic modulus of 5 GPa or more and 12 GPa or less, and a breaking strength of A membrane having a rubber elasticity modulus of 300 MPa or more can be used.

[0035] The first impact absorbing layer 103 and the second impact absorbing layer 113 are made of a high strength material. Representative examples of high strength materials include polyvinyl alcohol resin and polyester. Resin, polyamide resin, polyethylene resin, aramid resin, polyparaphenylene benzobi The first layer is made of a high-strength material with elasticity. When the impact absorbing layer 103 and the second impact absorbing layer 113 are provided, a load such as a localized pressure is absorbed by the entire layer. The radiation is diffused and absorbed by the body, preventing damage to the light-emitting device.

[0036] More specifically, the first impact absorbing layer 103 and the second impact absorbing layer 113 are made of aramid. Resin, polyethylene naphthalate (PEN) resin, polyethersulfone (PES) resin Fat, polyphenylene sulfide (PPS) resin, polyimide (PI) resin, polyethylene For example, a PET resin can be used. The impact absorbing layer 103 and the second impact absorbing layer 113 are made of aramid fiber using aramid resin. Use the room.

[0037] The adhesion between the first structure 132 and the first impact absorbing layer 103, the adhesion between the second structure 133 and the second impact absorbing layer 104, The adhesion to the shock absorbing layer 113 and the adhesion between the first structure 132 and the second structure 133 are respectively The first structure 132 and the second structure 133 are made of a fibrous body impregnated with an organic resin. In order to use prepreg as a structure, the material is directly heated and pressurized without using an adhesive layer. Can be glued.

[0038] As shown in FIG. 1B, a pair of structures and a pair of impact buffer layers are provided for the element section 170. By providing the symmetrical arrangement, the force acting on the light-emitting device can be more evenly distributed, making it less susceptible to bending or warping. The damage to the element section 170 caused by the shock can be prevented. If the two are made of the same material and have the same thickness, the same characteristics can be imparted, so the force spread can be improved. Furthermore, the scattering effect is further enhanced. and the total thickness of the first impact absorbing layer 103, the second structure 133 and the second impact absorbing layer 1 When the sum of the thicknesses of the first structure 132, the first impact mitigation layer 103, and the first impact mitigation layer 104 is large, The second structure 133 and the second impact mitigation layer 113 are used to mitigate stress caused by bending. This is preferable because the element section 170 is less likely to be damaged.

[0039] (Embodiment 2) In this embodiment, an example of a method for manufacturing the light-emitting device shown in FIG. 1A will be described with reference to FIGS. This will be described in detail in conjunction with the above.

[0040] First, a release layer 102 is formed on one surface of a substrate 100, and then an insulating layer 104 is formed (see FIG. 2(A)). The release layer 102 and the insulating layer 104 can be formed in succession. By forming the insulating film in this manner, the insulating film is not exposed to the atmosphere, and therefore the inclusion of impurities can be prevented.

[0041] The substrate 100 may be a glass substrate, a quartz substrate, a metal substrate, a stainless steel substrate, or the like. For example, by using rectangular glass substrates with one side of 1 meter or more, productivity can be improved dramatically. It can be improved.

[0042] In this step, the peeling layer 102 is provided on the entire surface of the substrate 100. In accordance with the above, a peeling layer 102 is provided on the entire surface of the substrate 100, and then the peeling layer 102 is selectively removed. Alternatively, the peeling layer 102 may be provided only in a desired area by removing the peeling layer 102 from the substrate 100. However, if necessary, a silicon oxide film or a silicon oxynitride film may be formed in contact with the substrate 100. An insulating layer such as a silicon nitride film or a silicon oxynitride film is formed, and a peeling layer is formed so as to contact the insulating layer. 102 may be formed.

[0043] The peeling layer 102 is formed to a thickness of 100 nm by a sputtering method, a plasma CVD method, a coating method, a printing method, or the like. 30nm~200nm Tungsten (W), Molybdenum (Mo), Titanium (Ti), Ta, Nb, Ni, Ni, Co, Zr (Zr), Zinc (Zn), Ruthenium (Ru), Rhodium (Rh), Palladium (Pd) , osmium (Os), iridium (Ir), and silicon (Si) or an alloy material mainly composed of the element, or a compound material mainly composed of the element, The silicon-containing layer is formed by laminating a single layer or a plurality of layers. The crystal structure of the silicon-containing layer is amorphous or microcrystalline. In this case, the coating method is a method of discharging a solution onto a processing object. This method includes, for example, spin coating and droplet ejection. The droplet ejection method ejects droplets of a composition containing fine particles from minute holes to form a pattern of a specified shape. It is a method of forming.

[0044] When the release layer 102 has a single layer structure, it is preferably made of tungsten or tungsten and molybdenum. A layer containing a mixture of tungsten and tungsten oxide or tungsten oxide nitride is formed. A layer containing a mixture of tungsten and molybdenum, or a layer containing an oxide or oxynitride of the mixture of tungsten and molybdenum is formed. The mixture of tungsten and molybdenum is, for example, tungsten and molybdenum. It is equivalent to Den's alloy.

[0045] When the release layer 102 has a laminated structure, it is preferable to form a metal layer as the first layer and a metal layer as the second layer. For example, the first metal layer is made of tungsten or tungsten. A layer containing a mixture of tungsten and molybdenum is formed, and a second layer is a tungsten oxide. Mixtures of tungsten and molybdenum oxides, tungsten nitrides, tungsten and molybdenum oxides Mixed nitride of tungsten, oxide nitride of tungsten, mixed nitride of tungsten and molybdenum Oxynitride of tungsten, oxynitride of tungsten, or mixture of tungsten and molybdenum A layer containing any one of the above nitride oxides is formed.

[0046] The peeling layer 102 is formed of a laminated structure of a metal layer as a first layer and a metal oxide layer as a second layer. In this case, a layer containing tungsten is formed as the metal layer, and an oxide layer is formed on the metal layer. By forming an insulating layer, a metal oxide layer is formed at the interface between the tungsten-containing layer and the insulating layer. It is also possible to utilize the fact that a layer containing tungsten oxide is formed by the metal layer. The surface of the material is treated with thermal oxidation, oxygen plasma treatment, or ozone water or other highly oxidizing solutions. This may be carried out to form a metal oxide layer.

[0047] The insulating layer 104 functions as a protective layer and prevents the formation of a void at the interface with the peeling layer 102 in the subsequent peeling step. To facilitate peeling or to prevent cracks or damage to semiconductor elements or wiring during the subsequent peeling process. For example, the insulating layer 104 is formed by sputtering or plasma. It is formed in a single layer or multiple layers using inorganic compounds by CVD, coating, printing, etc. Representative examples of organic compounds include silicon oxide, silicon nitride, silicon oxynitride, and silicon nitride oxide. Note that the insulating layer 104 can be formed using silicon nitride, silicon nitride oxide, silicon oxynitride, or the like. This prevents moisture and gases such as oxygen from entering the element layer to be formed later from the outside. The thickness of the insulating layer that functions as a protective layer is 10 nm to 1000 nm, and More preferably, it is 100 nm or more and 700 nm or less.

[0048] Next, a thin film transistor 106 is formed over the insulating layer 104 (see FIG. 2(B)). The transistor 106 has at least a source region, a drain region, and a channel forming region. The gate electrode 112 is made up of a semiconductor layer 108 , a gate insulating layer 110 , and a gate electrode 112 .

[0049] The semiconductor layer 108 has a thickness of 10 nm or more and 100 nm or less, and further has a thickness of 20 nm or more and 70 nm or less. The non-single crystal semiconductor layer is a layer formed of a non-single crystal semiconductor. , amorphous semiconductor layers, microcrystalline semiconductor layers, etc. In particular, laser light irradiation and instantaneous thermal annealing are Heat treatment using RTA or furnace annealing, or a combination of these methods It is preferable to use a crystalline semiconductor crystallized by a method. We have developed a crystallization method using metallic elements such as nickel, which have the effect of promoting the crystallization of silicon semiconductors. can be applied.

[0050] The gate insulating layer 110 has a thickness of 5 nm to 200 nm, preferably 10 nm to 100 nm. It is formed of inorganic insulators such as silicon oxide and silicon oxynitride with a thickness of less than 1 nm.

[0051] The gate electrode 112 is formed of a polycrystalline semiconductor doped with a metal or an impurity of one conductivity type. When metals are used, tungsten (W), molybdenum (Mo), titanium ( Titanium (Ti), tantalum (Ta), aluminum (Al), etc. can be used. Alternatively, a first metal nitride made of the metal nitride can be used. The first layer may be a layer of metal nitride and the second layer of the metal may be laminated. By making the second layer metal into a gallium oxide, it can be used as a barrier metal. This prevents the semiconductor layer from diffusing into the insulating layer and the semiconductor layer below it. In this case, the end of the first layer may protrude outward beyond the end of the second layer.

[0052] A thin film formed by combining a semiconductor layer 108, a gate insulating layer 110, a gate electrode 112, etc. The thin-film transistor 106 may be of a single drain structure, an LDD (lightly doped drain) structure, or a gate Various structures such as a gate overlap drain structure can be applied. The insulating layer (also called "sidewall") in contact with the side of the electrode 112 is used to form a low-concentration impurity The figure shows a thin film transistor having an LDD structure with a pure region. A multi-gate transistor is a transistor connected in series to which the gate voltage of the same potential is applied. thin-film transistors formed with a gate electrode structure, a dual-gate structure in which a semiconductor layer is sandwiched between gate electrodes on the top and bottom, etc. A transistor or the like can be applied.

[0053] In addition, thin-film transistors using metal oxides or organic semiconductor materials as the semiconductor layer are also being developed. Representative metal oxides include zinc oxide and zinc gallium ion. Examples include indium oxide.

[0054] Next, wiring 11 electrically connected to the source region and drain region of the thin film transistor 106 is 8, and then a first electrode 122 that is electrically connected to the wiring 118 is formed (FIG. 2(C) )reference).

[0055] In this embodiment, insulating layers 114 and 116 are formed to cover the thin film transistor 106. Wiring 118 that can also function as a source electrode and a drain electrode is formed on 116. An insulating layer 120 is formed on the wiring 118, and a first electrode 122 is formed on the insulating layer 120. do.

[0056] The insulating layers 114 and 116 function as interlayer insulating layers. Silicon oxide and silicon are produced by the methods such as the sputtering method, the SOG method, the droplet discharge method, and the screen printing method. Inorganic materials such as nitrides of elements, polyimides, polyamides, benzocyclobutene, acrylics, ethylene It is formed in a single layer or multilayer using organic materials such as epoxy or siloxane materials. The first insulating layer 114 is formed of a silicon nitride oxide film, and the second insulating layer 116 is formed of a silicon oxide nitride film. It can be formed of a silicon nitride film.

[0057] The wiring 118 is a laminated structure of titanium (Ti) and aluminum (Al), molybdenum (Mo) and aluminum (Al) laminated structure, , and barrier metals made of high melting point metals such as titanium (Ti) and molybdenum (Mo). It is preferable to form a combination.

[0058] The insulating layer 120 can be formed by a CVD method, a sputtering method, a SOG method, a droplet discharge method, a screen printing method, or the like. Inorganic materials such as silicon oxide and silicon nitride, polyimide, polyamide, benzocyclohexanone, etc. Single layer or multilayer made of organic materials such as robtene, acrylic, epoxy, and siloxane materials. Here, the insulating layer 120 is formed of epoxy by screen printing. do.

[0059] The first electrode 122 is an electrode used as an anode or a cathode of a light-emitting element. When using it as a light emitting diode, it is desirable to use a material with a large work function. Indium tin oxide film, silicon-containing indium tin oxide film, indium oxide containing 2~20wt % zinc oxide (ZnO) mixed target was used for sputtering. Conductive film having zinc oxide (ZnO), titanium nitride film, chromium film, tungsten film, Zn In addition to single-layer films such as titanium nitride and Pt films, laminated films with titanium nitride and aluminum as the main components, Use a three-layer structure consisting of a titanium oxide film, an aluminum-based film, and a titanium nitride film. can be done.

[0060] In addition, when used as a cathode, materials with a small work function (Al, Ag, Li, Ca, etc.) are used. or their alloys (MgAg, MgIn, AlLi, CaF2, or calcium nitride) In addition, when the electrode used as the cathode is made to be transparent, The metal thin film with a thin thickness and the conductive film with light transmission (indium tin oxide film, silicon Indium tin oxide film containing 2 to 20 wt% zinc oxide (ZnO) in indium oxide A light-transmitting conductive film formed by sputtering using a target containing a mixture of nitric oxide and It is recommended to use a laminate with lead (ZnO, etc.).

[0061] Next, an insulating layer 123 is formed so as to cover the end portion of the first electrode 122. In the present embodiment, the insulating layer 123 is formed by using a positive photosensitive acrylic resin film. In order to improve the covering property of the insulating layer 123, the upper end or the lower end is provided with a curvature. For example, the insulating layer 123 is made of a positive photosensitive material. When acrylic is used, the radius of curvature (0.2 μm to 3 μm) is set only on the upper end of the insulating layer 123. It is preferable that the insulating layer 123 has a curved surface. Negative type that becomes insoluble in etchant, or positive type that becomes soluble in etchant when exposed to light In addition, epoxy, polyimide, Polyamide, polyvinylphenol, benzocyclobutene and other organic materials and siloxane resins The insulating layer 10 may be provided in a single layer or a laminate structure made of a siloxane material such as the above.

[0062] In addition, the insulating layer 123 is subjected to a plasma treatment to be oxidized or nitrided. It is also possible to modify the surface of the insulating layer 123 to obtain a dense film. By modifying the surface of the insulating layer 123, the strength of the insulating layer 123 is improved, and the insulating layer 123 can be easily formed when openings or the like are formed. It is possible to reduce physical damage such as cracks during etching and film loss during etching. It becomes.

[0063] Next, the insulating layer provided on the edge of the substrate 100 is removed by etching or the like (FIG. 2(D) In this example, at least the insulating layers 114, 116, and 120 are removed, and the insulating layer 104 is In addition, multiple light emitting device panels are formed from one substrate (multiple panels are cut). In the case of the above, the insulating layer is etched at the edge of each region forming the panel, and each Each panel is separated into its constituent elements.

[0064] Next, the element formation layer 124 including the thin film transistor 106 and the like is peeled off from the substrate 100. Before peeling the substrate 100 from the substrate 100, the substrate 124 may be irradiated with laser light to form grooves. Here, the insulating layer 104 exposed at the end is irradiated with laser light. A groove 128 is formed (see FIG. 2(E)).

[0065] Next, as shown in FIG. 3(A), an adhesive sheet 130 is attached to the element formation layer 124 to set it up. The adhesive sheet 130 is a sheet that can be peeled off by light or heat.

[0066] By attaching the adhesive sheet 130, peeling can be easily performed and the adhesive sheet 130 can be peeled off easily. This reduces the stress applied to the element formation layer 124 and suppresses damage to the thin film transistor 106. It becomes possible.

[0067] Next, the groove 128 is used as a starting point to separate the release layer 102 and the insulating layer 104 which functions as a protective layer. At the interface, the element formation layer 124 is peeled off from the substrate 100 (see FIG. 3B). Methods include, for example, applying mechanical force (pulling it off with a human hand or a gripping tool, etc.) The separation may be performed by using a method such as a process of separating the particles while rotating a roller.

[0068] In addition, a liquid is dropped into the groove 128 and allowed to penetrate into the interface between the release layer 102 and the insulating layer 104. The element formation layer 124 may be peeled off from the peeling layer 102. Fluoride gas such as F3 or ClF3 is introduced, and the peeling layer is etched and removed with the fluoride gas. A method of peeling the element formation layer 124 from a substrate having an insulating surface can be used.

[0069] In this embodiment, a metal oxide layer is formed on the side in contact with the insulating layer 104 as the peeling layer 102. The element formation layer 124 is then peeled off by a physical means, but the present invention is not limited to this. For example, a light-transmitting substrate is used as the substrate 100, and a hydrogen-containing substrate is used as the peeling layer 102. The amorphous silicon layer is used, and the separation layer 102 is irradiated with a laser beam from the substrate 100 to form the amorphous silicon. The hydrogen contained in the base layer is vaporized to separate the substrate 100 from the separation layer 102. There can be.

[0070] In addition, the substrate 100 may be mechanically polished and removed, or the substrate 100 may be treated with a solution such as HF. In this case, the peeling layer 102 may not be used. .

[0071] Next, the peeled surface of the peeled element formation layer 124 (the surface of the insulating layer 104 exposed by peeling) A first structure 132 is provided in which a fibrous body 132a is impregnated with an organic resin 132b (FIG. 3( C) Such structures are also called prepregs.

[0072] Prepreg is made by impregnating a fiber body with a varnish made by diluting a matrix resin with an organic solvent, The organic solvent is evaporated by drying, and the matrix resin is semi-cured. The thickness is preferably 10 μm or more and 100 μm or less, and more preferably 10 μm or more and 30 μm or less. By using a structure with such a thickness, it is possible to manufacture a thin and bendable light-emitting device. can be done.

[0073] The organic resin 132b may be an epoxy resin, an unsaturated polyester resin, a polyimide resin, or a vinyl resin. Thermosetting resins such as maleimide triazine resins or cyanate resins can be used. In addition, thermoplastic resins such as polyphenylene oxide resin, polyetherimide resin, and fluororesin may be used. By using the organic resin, the fiber body can be made into a semiconductor aggregate by heat treatment. The organic resin 132b can be fixed to the integrated circuit as the glass transition temperature of the organic resin 132b increases. This is preferable because it is less likely to break when subjected to localized pressure.

[0074] A highly thermally conductive filler may be dispersed in the organic resin 132b or in the bundle of fibers of the fibrous body 132a. High thermal conductive fillers include aluminum nitride, boron nitride, silicon nitride, and alumina. Examples of highly thermally conductive fillers include metal particles such as silver and copper. Conductive fillers are included in the organic resin or fiber bundles, making it easier to release heat to the outside. Therefore, it is possible to suppress heat accumulation in the light emitting device, and thus to reduce damage to the light emitting device. It is possible.

[0075] The fibrous body 132a is a woven or nonwoven fabric made of high-strength fibers of organic or inorganic compounds. The high strength fibers are specifically those having a tensile modulus of elasticity or less. A typical example of a high-strength fiber is a polyvinyl alcohol-based fiber. Fibers, polyester fibers, polyamide fibers, polyethylene fibers, aramid fibers, Examples of the fiber include polyparaphenylene benzobisoxazole fiber, glass fiber, and carbon fiber. Glass fibers are made of E glass, S glass, D glass, Q glass, etc. The fibrous body 132a may be formed of one type of high-strength fiber. In addition, the material may be made of a plurality of the high-strength fibers. Also, the fibrous bodies may be provided on one side of the element section 170 including the light emitting element, instead of above and below the element section 170. The fibrous body 132a and the organic resin 132b may be provided on the same side. It is preferable to use a material that has a refractive index.

[0076] The fibrous body 132a uses bundles of fibers (single yarns) (hereinafter referred to as yarn bundles) as warp and weft threads. Fabrics made by weaving together fibers or nonwoven fabrics made by randomly or unidirectionally piling up multiple types of fiber bundles. In the case of woven fabric, plain weave, twill weave, satin weave, etc. may be used as appropriate. .

[0077] The cross section of the yarn bundle may be circular or elliptical. Fiber yarn that has been opened and processed by high-frequency vibration, continuous ultrasonic vibration, pressing with a roll, etc. A bundle of fiber yarns that has been opened has a wider bundle width and a smaller number of single yarns in the thickness direction. It is possible to reduce the cross section of the yarn bundle to an elliptical or flat shape. By using low twist yarn, the yarn bundle is easily flattened, and the cross-sectional shape of the yarn bundle becomes elliptical or flat. In this way, by using a yarn bundle having an elliptical or flat cross section, the fiber body 13 2a can be made thin. Therefore, the structure can be made thin. A light emitting device can be manufactured.

[0078] Next, the first structure 132 is heated and compressed to remove the organic resin 132b of the first structure 132. When the organic resin 132b is a plastic organic resin, this Then, the plasticized organic resin is hardened by cooling to room temperature. By this pressure bonding, the organic resin 132b spreads uniformly over the surface of the element formation layer 124 and hardens. The step of compressing the first structure 132 can be carried out under atmospheric pressure or under reduced pressure.

[0079] After the first structure 132 is pressed, the adhesive sheet 130 is removed to expose the first electrode 122. (See Figure 4(A)).

[0080] Next, the EL layer 134 is formed on the first electrode 122. The EL layer 134 is made of a low molecular weight material. The EL layer 134 can be formed from either a polyimide or a polymer material. The materials include not only those made of organic compound materials but also those containing inorganic compounds in part. The EL layer 134 has at least a light-emitting layer and has a single-layer structure consisting of one light-emitting layer. For example, a light emitting layer may be formed by stacking layers each having a different function. In addition to the layer, there are hole injection layer, hole transport layer, carrier blocking layer, electron transport layer, electron injection layer The functional layers each having a different function can be appropriately combined. It may contain a layer having two or more functions simultaneously possessed by each layer.

[0081] The EL layer 134 can be formed by a deposition method, an inkjet method, a spin coat method, a dip A coating method, a nozzle printing method, or the like can be used regardless of whether it is a wet method or a dry method.

[0082] Next, the second electrode 136 is formed on the EL layer 134. This forms the first electrode 1 22, an EL layer 134, and a second electrode 136 are laminated to form a light emitting element 140. In addition, one of the first electrode 122 and the second electrode 136 is used as an anode and the other is used as a cathode. Used as a cathode.

[0083] When used as an anode, it is desirable to use a material with a large work function. Indium tin oxide film, indium tin oxide film containing silicon, indium oxide 2 to 20 A transparent thin film was formed by sputtering using a target containing wt% zinc oxide (ZnO). Photoconductive film, zinc oxide (ZnO), titanium nitride film, chromium film, tungsten film, In addition to single-layer films such as Zn and Pt films, laminated films with titanium nitride and aluminum as the main components are also available. , a three-layer structure of a titanium nitride film, an aluminum-based film, and a titanium nitride film, etc. It is possible.

[0084] In addition, when used as a cathode, materials with a small work function (Al, Ag, Li, Ca, etc.) are used. or their alloys (MgAg, MgIn, AlLi, CaF2, or calcium nitride) In addition, when the electrode used as the cathode is made to be transparent, The metal thin film with a thin thickness and the conductive film with light transmission (indium tin oxide film, silicon Indium tin oxide film containing 2 to 20 wt% zinc oxide (ZnO) in indium oxide A light-transmitting conductive film formed by sputtering using a target containing a mixture of nitric oxide and It is recommended to use a laminate with lead (ZnO, etc.).

[0085] In this embodiment, the first electrode 122 is used as an anode, and the EL layer 134 is A structure in which a hole injection layer, a hole transport layer, a light emitting layer, and an electron injection layer are laminated in this order from the electrode 122 side. Various materials can be used for the light-emitting layer. A compound that emits phosphorescence or a phosphorescent compound that emits phosphorescence can be used.

[0086] Next, the insulating layer 138 is formed on the second electrode 136 so as to cover the light emitting element 140 . This allows the element section 170 to be formed. The insulating layer 138 functions as a protective layer. This prevents moisture and damage to the EL layer 134 during the subsequent compression process of the second structure. In order to prevent the EL layer 134 from being heated during the subsequent compression process of the second structure, For example, the insulating layer 138 is formed by sputtering or plating. It is formed in a single layer or multiple layers using inorganic compounds by the CVD method, coating method, printing method, etc. Representative examples of inorganic compounds include carbon, silicon oxide, silicon nitride, silicon oxynitride, and silicon nitride oxide. It is preferable to use a film with good coverage as the insulating layer 138. Alternatively, the insulating layer 138 may be a laminated film of an organic compound and an inorganic compound. By using silicon nitride, silicon nitride oxide, silicon oxynitride, etc., it is possible to form the insulating film later from the outside. The protective layer can prevent moisture and gas such as oxygen from entering the element layer. The thickness of the insulating layer that functions as a barrier is 10 nm to 1000 nm, and even 100 nm to 700 nm. 00 nm or less is preferable (see FIG. 4(B)).

[0087] Next, a second structure 133 is provided on the insulating layer 138. The second structure 133 also has a structure similar to that of the first structure. Similar to the structure 132, a structure in which a fibrous body is impregnated with an organic resin is used. The structure 133 is heated and compressed to adhere to the first structure 132, and the element including the light emitting element 140 is formed. The portion 170 is sealed with the first structure 132 and the second structure 133 (see FIG. 4(C)).

[0088] As described above, the present embodiment has a light emitting element sealed by the first and second structures. A light emitting device having the above structure can be formed.

[0089] In the light emitting device of this embodiment, an element portion 170 is disposed approximately in the center of the cross section of the light emitting device. At the end where the element portion 170 is not present, the first structure 132 and the second structure 13 3 are in contact with each other and fixed to each other, sealing the element section 170. The second structure 133 has a region in close contact with the element section 170 so as to surround the outer periphery of the element section 170. The first structure 132 and the second structure 133 are formed from the same material, The adhesion of the structure can be improved.

[0090] In the light emitting device of the present embodiment, the pair of structures that seal the element section 170 are Acts as an impact-resistant layer against external forces (also called external stress) applied to the device By providing a pair of structures on the outside of the light emitting element, it is possible to This reduces the force applied to the light-emitting device, preventing damage to the device and improving its characteristics due to external stress. It is therefore possible to prevent defects and the like. In addition, a highly reliable light-emitting device having an external switch can be provided in the manufacturing process. This prevents defects in shape and characteristics caused by stress, and enables the production of light-emitting devices with high yield. do.

[0091] Note that this embodiment mode can be freely combined with other embodiment modes.

[0092] (Embodiment 3) In this embodiment mode, an example of a manufacturing method of a light emitting device different from that of the above embodiment mode will be described with reference to the drawings. In this embodiment, a manufacturing process of the light-emitting device shown in FIG. We will show and explain.

[0093] First, a release layer 102 is formed on one surface of a substrate 100, and then an insulating layer 104 is formed. A first electrode 150 is formed over the insulating layer 104 (see FIG. 5A).

[0094] The first electrode 150 is an electrode used as an anode or a cathode of a light-emitting element. When using it as a light emitting diode, it is desirable to use a material with a large work function. Indium tin oxide film, silicon-containing indium tin oxide film, indium oxide containing 2~20wt % zinc oxide (ZnO) mixed target was used for sputtering. Conductive film having zinc oxide (ZnO), titanium nitride film, chromium film, tungsten film, Zn In addition to single-layer films such as titanium nitride and Pt films, laminated films with titanium nitride and aluminum as the main components, Use a three-layer structure consisting of a titanium oxide film, an aluminum-based film, and a titanium nitride film. can be done.

[0095] In addition, when used as a cathode, materials with a small work function (Al, Ag, Li, Ca, etc.) are used. or their alloys (MgAg, MgIn, AlLi, CaF2, or calcium nitride) In addition, when the electrode used as the cathode is made to be transparent, The metal thin film with a thin thickness and the conductive film with light transmission (indium tin oxide film, silicon Indium tin oxide film containing 2 to 20 wt% zinc oxide (ZnO) in indium oxide A light-transmitting conductive film formed by sputtering using a target containing a mixture of nitric oxide and It is recommended to use a laminate with lead (ZnO, etc.).

[0096] Next, an insulating layer 152 is formed on the first electrode 150, and a thin-film transistor is formed on the insulating layer 152. The thin film transistor 106 is then formed. Insulating layers 114 and 116 are then formed on the thin film transistor 106. Then, wiring 118 capable of functioning as a source electrode and a drain electrode is formed on the insulating layer 116. (See Figure 5(B)).

[0097] The thin film transistor 106 has a single drain structure, an LDD (lightly doped drain) structure, Various structures such as a thin-film overlap drain structure can be applied. 1 shows a thin film transistor having a group-drain structure.

[0098] Also, the wiring 118 and the first electrode 150 are electrically connected. The conductive layer 154 electrically connects the wiring 118 and the first electrode 150. It can be formed simultaneously (in the same process) with the gate electrode 153 of the transistor 106 .

[0099] Next, the insulating layer provided on the edge of the substrate 100 is removed by etching or the like, and then the wiring 11 is An insulating layer 156 is formed so as to cover the insulating film 8 (see FIG. 5(C)). The insulating layer 152 and the like are removed to expose the layer 104. When forming a panel for a device (multiple cut), the ends of each area forming the panel In the step, the insulating layer is etched to separate the elements constituting each panel.

[0100] Next, the element formation layer 124 including the thin film transistor 106 and the like is peeled off from the substrate 100. Before peeling the substrate 100 from the substrate 100, the substrate 124 may be irradiated with laser light to form grooves. Here, the insulating layers 156 and 104 at the ends are irradiated with laser light. A groove 128 is formed (see FIG. 5(D)).

[0101] Next, a separate film 158 is provided so as to cover at least the groove 128 (FIG. 6(A) ) An example of a separate film is a PET film coated with silicone resin. There is a problem.

[0102] Next, a first structure in which the fibrous body 132a is impregnated with the organic resin 132b is applied to the surface of the insulating layer 156. Next, the first structure 132 is heated and compressed to form a The organic resin 132b of the first structure 132 is plasticized, semi-cured, or cured.

[0103] The first structure 132 is attached to the insulating layer 156, so that the first structure 132 can be easily peeled off. At the same time, the stress applied to the element formation layer 124 before and after peeling is reduced, and the thin film transistor This makes it possible to suppress damage to 106.

[0104] In addition, before the first structure 132 is attached, a separation film 158 is provided. As a result, the organic resin 132b penetrates into the groove 128 and adheres to the release layer 102. Peel defects can be suppressed.

[0105] Next, the groove 128 is used as a starting point to separate the release layer 102 and the insulating layer 104 which functions as a protective layer. At this interface, the element formation layer 124 is peeled off from the substrate 100 (see FIG. 6(C)). After peeling, it is preferable to remove the separation film 158.

[0106] Next, the insulating layer 104 is etched to cover the end of the first electrode 150, forming an insulating layer 15. 9 is formed (see FIG. 7(A)). The insulating layer 159 functions as a bank (a partition) of the light-emitting element. Since the first electrode is embedded in the insulating layer 152, the first electrode is not exposed to the surface of the insulating layer 104. Therefore, the insulating layer 104 functions as a bank. By forming the insulating layer 159 having a function of reducing the thickness of the bank, it is possible to reduce the thickness of the bank. This also leads to a thinner light emitting device.

[0107] The method for forming the insulating layer 159 that functions as a bank of the light-emitting element is not limited to the above method. For example, the insulating layer 104 is removed by dry etching to expose the first electrode 150. After that, an insulating layer 1 is formed by using an organic resin or the like so as to cover the end of the first electrode 150. Alternatively, an organic resin film may be formed on the insulating layer 104, and the organic resin may be The film and the insulating layer 104 are etched by a photolithography process using the same mask. 3, so that the first electrode 150 is exposed.

[0108] Next, the EL layer 160 is formed on the first electrode 150. The EL layer 160 is made of a low molecular weight material. The EL layer 160 can be made of either a polyimide or a polymer material. The materials include not only those made of organic compound materials but also those containing inorganic compounds in part. The EL layer has at least a light-emitting layer and has a single-layer structure consisting of one light-emitting layer. Alternatively, it may have a laminated structure of layers each having a different function. It may contain a layer having two or more functions simultaneously possessed by each layer.

[0109] The EL layer 160 can be formed by a deposition method, an inkjet method, a spin coating method, a dip coating method, or the like. A coating method, a nozzle printing method, or the like can be used regardless of whether it is a wet method or a dry method.

[0110] Next, a second electrode 162 is formed on the EL layer 160. This forms a first electrode 1 50, an EL layer 160, and a second electrode 162 are laminated to form a light emitting element 240. In addition, one of the first electrode 150 and the second electrode 162 is used as an anode and the other is used as a cathode. Used as a cathode.

[0111] Next, an insulating film that functions as a protective layer is formed on the second electrode 162 so as to cover the light emitting element 240. As a result, the element portion 170 is formed. can.

[0112] Next, a second structure 133 is provided on the insulating layer 164. The second structure 133 also has a structure similar to that of the first structure. Similar to the structure 132, a structure in which a fibrous body is impregnated with an organic resin is used. The structure 133 is heated and compressed to plasticize or harden it, and the end where the element portion 170 is not present is By this process, an element portion including the light emitting element 240 is formed. 170 can be sealed with the first structure 132 and the second structure 133 (FIG. 7(C) ) The step of crimping the structure is carried out under atmospheric pressure or under reduced pressure.

[0113] As described above, the present embodiment has a light emitting element sealed by the first and second structures. A light emitting device having the above structure can be formed.

[0114] In the light emitting device of this embodiment, an element portion 170 is disposed approximately in the center of the cross section of the light emitting device. At the end where the element portion 170 is not present, the first structure 132 and the second structure 13 3 are in contact with each other and fixed to each other, sealing the element section 170. The second structure 133 has a region in close contact with the element section 170 so as to surround the outer periphery of the element section 170. The first structure 132 and the second structure 133 are formed from the same material, The adhesion of the structure can be improved.

[0115] In the light-emitting device of this embodiment, the pair of structures sealing the element portion is It acts as an impact resistant layer against external forces (also called external stress). By providing a body, it is possible to reduce the force applied locally, so that the external stress It is therefore possible to prevent damage to the light emitting device, defective characteristics, etc., caused by the above-mentioned. It is possible to provide a light emitting device that is highly reliable and has durability while achieving miniaturization. In addition, in the manufacturing process, defects in shape and characteristics caused by external stress are prevented, and the device is produced with a high yield. Optical devices can be fabricated.

[0116] Note that this embodiment mode can be freely combined with other embodiment modes.

[0117] (Embodiment 4) In this embodiment, a thin-film transistor is fabricated using a relatively low-temperature process (less than 500° C.). (thin film transistors using amorphous semiconductor films or microcrystalline semiconductor films, etc., organic semiconductor films a thin film transistor using a semiconductor, a thin film transistor using an oxide semiconductor, etc. The method for fabricating the pixel portion of the device is described below. Here, an EL display device is used as the light-emitting device. I will use this to explain.

[0118] A release layer 302 is formed on one surface of the substrate 100, and then an insulating layer 104 is formed (FIG. 8(A) The release layer 302 and the insulating layer 104 can be formed in succession. By forming the container in this manner, it is possible to prevent the container from being exposed to the atmosphere and thus prevent the inclusion of impurities.

[0119] In this step, the peeling layer 302 is provided on the entire surface of the substrate 100. In response to this, a peeling layer 302 is provided on the entire surface of the substrate 100, and then the peeling layer 302 is selectively removed. Alternatively, the peeling layer 302 may be provided only in a desired area by removing the peeling layer 302 from the substrate 100. However, if necessary, a silicon oxide film or a silicon oxynitride film may be formed in contact with the substrate 100. An insulating layer such as a silicon nitride film or a silicon oxynitride film is formed, and a peeling layer is formed so as to contact the insulating layer. 302 may be formed.

[0120] The peeling layer 302 is formed to a thickness of 100 nm by a sputtering method, a plasma CVD method, a coating method, a printing method, or the like. 30nm to 200nm of molybdenum (Mo), alloy material mainly composed of molybdenum, or A layer or multiple layers of a compound material mainly composed of molybdenum element are laminated. and form.

[0121] When the release layer 302 has a single layer structure, it is preferably made of molybdenum or a mixture containing molybdenum. A layer containing a compound, or a layer containing an oxide or oxynitride of molybdenum, or A layer containing an oxide or oxynitride of a compound containing molybdenum is formed. The mixture containing molybdenum is typically an alloy material mainly composed of molybdenum, or It is a compound material whose main component is the element tungsten. One example is a compound of tungsten and molybdenum. The metal may include, but is not limited to, gold, as long as it contains molybdenum.

[0122] When the release layer 302 has a laminated structure, it is preferable to form a metal layer as the first layer and a metal layer as the second layer. Typically, the first metal layer is made of molybdenum or molybdenum. A layer containing a mixture of molybdenum is formed, and a second layer is a mixture of molybdenum oxide and nitride. , an oxide nitride, or a layer containing a nitride oxide, or an oxide of a compound containing molybdenum A layer containing a nitride, a nitride, an oxynitride, or a nitride oxide is formed.

[0123] The peeling layer 302 is formed of a laminated structure of a metal layer as the first layer and a metal oxide layer as the second layer. In this case, a layer containing molybdenum is formed as the metal layer, and an insulating layer formed of an oxide is formed on the metal layer. By forming an insulating layer, molybdenum is formed as a metal oxide layer at the interface between the layer containing molybdenum and the insulating layer. It is also possible to utilize the formation of a layer containing an oxide of isopropyl alcohol. Then, the material is treated with thermal oxidation, oxygen plasma treatment, or ozone water or other highly oxidizing solutions. A metal oxide layer may be formed.

[0124] The substrate 100 and the insulating layer 104 may be the same as those shown in the second embodiment. It can be used as appropriate.

[0125] Next, a thin film transistor 304 is formed on the insulating layer 104 (see FIG. 8(B)). In the above embodiment, a channel formation region of a thin film transistor is formed using an amorphous semiconductor or a microcrystalline semiconductor. 1 shows an inverted staggered thin film transistor formed of an organic semiconductor or an oxide semiconductor.

[0126] The thin film transistor 304 includes at least a gate electrode 306, a gate insulating layer 308, a semiconductor The semiconductor layer 310 is made up of a layer 310. The semiconductor layer 310 is also made up of a layer 310 that functions as a source region and a drain region. In addition, a wiring in contact with the impurity semiconductor layer 312 may be formed. Form 314.

[0127] The gate electrode 306 may be made of chromium in addition to the metals used for the gate electrode 112 in the above embodiment. , copper, neodymium, scandium, or other metal materials or alloy materials containing these as the main components. The insulating layer can be formed as a single layer or a multilayer. A semiconductor layer such as polycrystalline silicon or an AgPdCu alloy may also be used. Conductive oxides and composite oxides made of tungsten, gallium, aluminum, zinc, tin, etc. For example, a gate electrode having light-transmitting properties may be formed by using indium tin oxide (ITO). It is also possible to use the following.

[0128] The gate electrode 306 is formed on the insulating layer 104 by sputtering or vacuum deposition. A conductive layer is formed from the material, and a photolithography method or an inkjet method is applied to the conductive layer. The conductive layer can be formed by forming a mask by a method such as a mask forming method, and etching the conductive layer using the mask. Cut.

[0129] Also, a conductive nanopaste such as silver, gold, or copper is discharged onto the substrate by an inkjet method, It is also possible to form the gate electrode 306 by firing the insulating layer 104. To improve adhesion, a nitride layer of the above metal material is formed between the insulating layer 104 and the gate electrode 306. Here, a conductive layer is formed on the insulating layer 104, and a pattern is formed using a photomask. Etching is performed using the resist mask formed.

[0130] The side surface of the gate electrode 306 is preferably tapered. Since a semiconductor layer and wiring will be formed on the 6 in a later process, it is necessary to prevent the wiring from being broken at the step. In order to make the side surface of the gate electrode 306 tapered, For example, the etching gas may contain oxygen gas. By doing so, it is possible to perform etching while receding the resist.

[0131] In addition, the gate wiring (scanning line) is also formed at the same time as the process of forming the gate electrode 306. The scanning line is a line for selecting a pixel, and the capacitance line is a line for storing a storage capacitance of the pixel. However, it is not limited to this, and may also include gate wiring and capacitance One or both of the wirings may be provided separately from the gate electrode 306 .

[0132] The gate insulating layer 308 is formed by a CVD method, a sputtering method, or a pulsed laser deposition (PLD) method. ) and the like, silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, hafnium oxide, oxide hafnium aluminum oxide, hafnium silicon oxide nitride, or yttria in a single layer or laminated layer. The gate insulating layer 308 can be formed by using a CVD method, a sputtering method, or the like. In addition, the gate insulating layer 308 can be formed by using a high-frequency (1 GHz or more) By using a microwave plasma CVD apparatus, the gate electrode, drain electrode, and The breakdown voltage between the source electrode and the thin film transistor can be improved, resulting in a highly reliable thin film transistor. can be obtained.

[0133] The semiconductor layer 310 has a thickness of 10 nm or more and 200 nm or less, and preferably 20 nm or more and 150 nm or less. The non-single crystal semiconductor layer is a layer formed of the following non-single crystal semiconductor: The semiconductor layer may be a silicon layer, a germanium layer, a silicon layer, a silicon nitride ... In this embodiment, the present invention is not applied to the laser irradiation, heat treatment, etc. The method is characterized in that the semiconductor device is formed directly on the gate insulating layer 308 at a low temperature of less than 500° C. The layer 302 can be formed at a low temperature of less than 500° C. by using a layer containing at least molybdenum. Even when a thin film transistor is formed, the peeling process can be easily carried out.

[0134] The semiconductor layer 310 is made of a microcrystalline semiconductor and an amorphous semiconductor from the side in contact with the gate insulating layer. The semiconductor layer 310 may have a structure in which conductors are laminated. In addition, the amorphous structure has inverted pyramidal crystal grains and / or grain sizes of 1 nm to 10 nm, preferably Alternatively, a non-single crystal semiconductor containing microcrystal grains having a size of 1 nm or more and 5 nm or less may be formed.

[0135] The semiconductor layer 310 may be made of impurities that impart one conductivity type, such as phosphorus that imparts n-type conductivity. The material element may be added to the amorphous semiconductor or the microcrystalline semiconductor. 0, titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium Molybdenum, tungsten, cobalt, nickel, platinum, etc. react with silicon to produce silica. A metal element that forms an ion may be added to an amorphous semiconductor or a microcrystalline semiconductor. Impurity elements that give one conductivity type and metal elements that react with silicon to form silicide are By adding, it is possible to increase the mobility of the semiconductor layer. It is possible to increase the field effect mobility of a thin film transistor having the layer as a channel formation region.

[0136] The semiconductor layer 310 may be formed using a metal oxide or an organic semiconductor material. Representative metal oxides include zinc oxide and zinc gallium indium oxide.

[0137] An impurity semiconductor layer 3 that is in contact with the semiconductor layer 310 and functions as a source region and a drain region The impurity semiconductor layer 312 may be doped with an impurity element that imparts one conductivity type. In the case of forming an n-channel thin film transistor, In this case, phosphorus may be used as an impurity element for imparting one conductivity type. It is formed using amorphous silicon or microcrystalline silicon. In the case of forming a panel-type thin film transistor, the impurity element that gives one conductivity type is Boron may be used as the material for the insulating layer. Typically, boron-containing amorphous silicon or is formed using microcrystalline silicon.

[0138] The concentration of the impurity element that gives one conductivity type, phosphorus or boron, is set to 1×1019 ~1×10 21 cm -3 This makes it possible to make ohmic contact with the wiring 314. These regions function as source and drain regions.

[0139] The source and drain regions are 10 nm to 100 nm, preferably 30 nm to 50 nm. The thickness of the source and drain regions is reduced to 0 nm or less. The throughput can be improved.

[0140] The wiring 314 can be formed in a manner similar to that of the wiring 118 described in Embodiment 2. For example, conductive oxides and composites made of indium, gallium, aluminum, zinc, tin, etc. A composite oxide may also be used.

[0141] The thin film transistor according to the present embodiment is the same as the thin film transistor described in the second and third embodiments. Like a thin-film transistor, it is used for switching in pixels of a light-emitting device, such as an EL display device. Therefore, the insulating layer covering the thin film transistor can be applied to the thin film transistor. 316, an insulating layer 318 is formed (see FIG. 8(C)).

[0142] Next, openings are formed so as to reach the source and drain electrodes formed by the wiring 314. When the opening 321 is formed, the opening 321 is formed at the edge of the substrate 100. The insulating layers 316 and 318 are then removed by etching or the like. It is preferable to remove the border layer 318 to expose the insulating layer 316. When multiple EL panels are formed from one panel (multiple panels are cut), each area that forms the panel is At least the insulating layer 318 is etched at the ends of the respective panels. It is preferable to separate each element.

[0143] Next, a second insulating layer 316 and a second insulating layer 318 are formed on the insulating layer 316 and the insulating layer 318 so as to be connected through the opening 321. Next, the first electrode 322 is formed on the insulating layer 123 in the same manner as in the second embodiment. An insulating layer 323 is formed so as to cover the end of the substrate 22. In this manner, the substrate 22 shown in FIG. It is possible to fabricate thin film transistors for switching in the pixels of a display device.

[0144] Note that the insulating layer 316 can be formed in a similar manner to the gate insulating layer 308. The insulating layer 316 is formed to prevent impurities, such as organic matter, metals, or water vapor, from being suspended in the air and thus can be a source of contamination. It is preferable to use dense silicon nitride to prevent the intrusion of elements. The layer 318 can be formed in a manner similar to that of the insulating layer 116 described in Embodiment 2. The first electrode 322 can be formed in a manner similar to that of the first electrode 122 described in the second embodiment. .

[0145] Next, the element formation layer 324 including the thin film transistor 304 and the like is peeled off from the substrate 100 . Before peeling off the element formation layer 324 from the substrate 100, a laser beam is irradiated to form a groove 327. Here, the insulating layer 316 exposed at the end and the gate insulating layer 308 are preferably Then, a groove 327 is formed by irradiating the insulating layer 104 with a laser beam 326 (FIG. 8(E) reference).

[0146] Next, as shown in FIG. 9(A), an adhesive sheet 328 is attached to the element formation layer 324. The adhesive sheet 328 is a sheet that can be peeled off by light or heat.

[0147] By attaching the adhesive sheet 328, the peeling of the peeling layer 302 can be easily performed. At the same time, the stress applied to the element formation layer 324 before and after peeling is reduced, and the thin film transistor This makes it possible to suppress damage to 304.

[0148] Next, the groove 327 is used as a starting point to separate the peeling layer 302 and the insulating layer 104 which functions as a protective layer. At the interface, the element formation layer 324 is peeled off from the substrate 100 (see FIG. 9B). Methods include, for example, applying mechanical force (pulling it off with a human hand or a gripping tool, etc.) The separation may be performed by using a method such as a process of separating the particles while rotating a roller.

[0149] In addition, a liquid is dropped into the groove 327, and the liquid is allowed to penetrate into the interface between the release layer 302 and the insulating layer 104. The element formation layer 324 may be peeled off from the peeling layer 302. Fluoride gas such as F3 or ClF3 is introduced, and the peeling layer is etched and removed with the fluoride gas. A method of peeling the element formation layer 324 from a substrate having an insulating surface can be used.

[0150] In this embodiment, a metal oxide layer is formed on the side in contact with the insulating layer 104 as the peeling layer 302. The element formation layer 324 is then peeled off by physical means, but the present invention is not limited to this. A substrate having light transmitting properties is used as the substrate 100, and amorphous silicon containing hydrogen is used as the peeling layer 302. A laser beam is irradiated from the substrate 100 to the peeling layer 302 to form an amorphous silicon layer. A method of vaporizing hydrogen contained in the substrate 100 and the peeling layer 302 to peel the substrate 100 and the peeling layer 302 is used. can be done.

[0151] In addition, the substrate 100 may be mechanically polished and removed, or the substrate 100 may be treated with a solution such as HF. In this case, the peeling layer 302 may not be used. .

[0152] Next, on the peeled surface of the peeled element formation layer 324 (the surface of the insulating layer 104 exposed by peeling), After providing a structure in which the fibrous body is impregnated with organic resin, the structure is heated and pressed to impregnate the organic resin. By plasticizing or hardening the element formation layer 324, the fibrous body 132a is impregnated with the organic resin 132b. A first structure 132 is provided in which a fibrous body is impregnated with an organic resin (see FIG. 9(C)). The adhesion of the structure can be carried out under atmospheric pressure or reduced pressure. When the organic resin of the soaked structure is a plastic organic resin, the structure is one in which the fibrous body is impregnated with the organic resin. The body contains an organic resin 132b which is hardened by heating and pressing the body and then cooling to room temperature.

[0153] The first structure 132 may be the same as that shown in the second embodiment. .

[0154] After the first structure 132 is pressed, the adhesive sheet 328 is removed to expose the first electrode 322. (See FIG. 10(A)).

[0155] Next, the EL layer 360 is formed on the first electrode 322. The EL layer 360 is made of a low molecular weight material. The EL layer 360 can be made of either a polyimide or a polymer material. The materials include not only those made of organic compound materials but also those containing inorganic compounds in part. The EL layer has at least a light-emitting layer and has a single-layer structure consisting of one light-emitting layer. Alternatively, it may have a laminated structure of layers each having a different function. It may contain a layer having two or more functions simultaneously possessed by each layer.

[0156] The EL layer 360 can be formed by a deposition method, an inkjet method, a spin coating method, a dip coating method, or the like. A coating method, a nozzle printing method, or the like can be used regardless of whether it is a wet method or a dry method.

[0157] Next, a second electrode 362 is formed on the EL layer 360. This forms a first electrode 3 22, a light emitting element 340 in which an EL layer 360 and a second electrode 362 are laminated can be formed. In addition, one of the first electrode 322 and the second electrode 362 is used as an anode and the other is used as a cathode. Used as a cathode.

[0158] Then, an insulating film serving as a protective layer is formed on the second electrode 362 so as to cover the light emitting element 340. As a result, the element portion 170 is formed. can be done.

[0159] Next, a second structure 133 is provided on the insulating layer 364. The second structure 133 also has a structure similar to that of the first structure. Similar to the structure 132, a structure in which a fibrous body is impregnated with an organic resin is used. The structure 133 is heated and compressed to form the first structure 1 at the end where the element portion 170 is not present. 32, and the element section 170 including the light emitting element 340 is attached to the first structure 132 and the second structure 32. The cavity is sealed with structure 133 (see FIG. 10(C)).

[0160] As a result, the light-emitting device of the present invention having the light-emitting element sealed by the first and second structures is obtained. A device can be formed.

[0161] In the light emitting device of this embodiment, an element portion 170 is disposed approximately in the center of the cross section of the light emitting device. At the end where the element portion 170 is not present, the first structure 132 and the second structure 13 3 are in contact with each other and fixed to each other, sealing the element section 170. The second structure 133 has a region in close contact with the element section 170 so as to surround the outer periphery of the element section 170. The first structure 132 and the second structure 133 are formed from the same material, The adhesion of the structure can be improved.

[0162] In this embodiment, the method for forming the element formation layer 324 is the same as that in the second embodiment. Alternatively, embodiment 3 can be used.

[0163] In this embodiment, a layer containing at least molybdenum is used as the peeling layer, so that the prepreg Devices including thin film transistors that cannot be directly formed on a substrate and are formed at low temperatures below 500℃ The formation layer can be easily peeled off from the release layer, and the element formation layer is fixed to the prepreg. The element substrate can be formed by bonding the organic EL display device to the organic EL display device. It can be manufactured.

[0164] (Embodiment 5) In this embodiment mode, a method for manufacturing a display device with a small number of steps will be described below. Specifically, the present invention relates to a method for manufacturing a pixel portion of a display device having a thin film transistor using an oxide semiconductor. The following describes the above, with an EL display device being used as the display device.

[0165] A first structure 132 in which a fibrous body 132a is impregnated with an organic resin 132b is used as a substrate. In the first structure 132, the organic resin 132b impregnated in the fibrous body 132a is cured. Or it is a semi-cured organic resin.

[0166] Before forming the gate electrode 402 on the first structure 132, which is the substrate, An insulating layer 400 functioning as a base film may be provided between the gate electrode 402 and the insulating layer 400. The edge layer 400 prevents moisture, alkali metals, etc. from the first structure 132 to the TFT element and the display device. What impurities are diffusing and causing the reliability of the semiconductor elements formed in the element formation layer to deteriorate? This can be appropriately provided as a blocking layer.

[0167] The insulating layer 400 may be made of an insulating material such as silicon oxide, silicon nitride, silicon oxynitride, or silicon nitride oxide. For example, when the insulating layer 400 has a two-layer structure, the first insulating layer is formed using It is preferable to form a silicon nitride oxide layer as a first insulating layer, and then form a silicon oxynitride layer as a second insulating layer. In addition, a silicon nitride layer is formed as the first insulating layer, and a silicon oxide layer is formed as the second insulating layer. may be formed.

[0168] Next, a gate electrode 402 is formed on the first structure 132, and a gate An insulating layer 404 is formed (see FIG. 11(A)). A gate electrode 402, a gate insulating layer 404 The gate electrode 306 and the gate insulating layer 308 shown in the fourth embodiment are appropriately used. Complete.

[0169] Next, a resist mask formed using a photomask is used to contact the gate insulating layer 404. A contact hole is formed to expose the connection pad of the gate electrode 402. The outer periphery of the device may be removed by dry etching.

[0170] The semiconductor layer 408 is formed using an oxide semiconductor layer. Use a composite oxide of elements selected from the group consisting of sulphur, gallium, aluminium, zinc and tin. For example, zinc oxide (ZnO), indium oxide containing zinc oxide (IZO), and oxide An example is an oxide made of indium oxide, gallium oxide, and zinc oxide (IGZO). Oxide semiconductors can be formed by sputtering, pulsed laser deposition (PLD), etc. By using a method that allows deposition of a film at a temperature lower than the heat resistance temperature of the prepreg, It can be formed directly on the

[0171] The semiconductor layer 408 is formed by reactive sputtering or pulsed laser deposition (PLD). The semiconductor layer can be formed to a thickness of 10 nm to 200 nm, preferably 20 It is preferable to form the film with a thickness of 100 nm or more and 150 nm or less. The rear density increases and the thin-film transistor characteristics are impaired, so the oxygen concentration in the film formation atmosphere It is advisable to control the following:

[0172] In the case of an oxide consisting of indium oxide, gallium oxide, and zinc oxide, the composition ratio of the metal elements is The degree of freedom is high, and it functions as a semiconductor in a wide range of mixture ratios. Indium oxide (IZO) and oxides consisting of indium oxide, gallium oxide, and zinc oxide are One example is a material (IGZO) in which these are mixed in equal molar amounts.

[0173] Here, a method using IGZO will be described as an example of a method for forming the semiconductor layer 408. Indium oxide (In2O3), gallium oxide (Ga2O3) and zinc oxide (ZnO ) were mixed in equal moles and sintered to produce a 500W output with a sintered 8-inch diameter target. The semiconductor layer is formed by DC (Direct Current) sputtering using a high power. The chamber pressure was 0.4 Pa, and the gas composition ratio was Ar / O2 10 / 5 sccm. The oxygen partial pressure during film formation is adjusted to a level suitable for a transparent material such as indium tin oxide (ITO). It is preferable to set the temperature higher than the film formation conditions of the conductive film to be formed and suppress oxygen deficiency.

[0174] After the semiconductor layer is formed, a resist mask is formed using a photomask, and the resist is removed by dilute hydrochloric acid or The semiconductor layer 408 is formed by etching with an organic acid, for example, citric acid (FIG. 11( B) The photoresist is then stripped using an organic solvent.

[0175] Next, wirings 412 and 414 are formed on the semiconductor layer 408. The wiring 314 can be formed using the same material as the wiring 314 shown in the fourth embodiment.

[0176] The wirings 412 and 414 are formed by forming a resist mask on at least the semiconductor layer 408 and then A conductive layer is formed on the resist mask, the semiconductor layer 408, and the conductive layer by a sputtering method or a vacuum deposition method. The resist is peeled off and a lift-off method is used to form a gate insulating layer 404 as shown in FIG. As shown in FIG. 1, wirings 412 and 414 are formed to expose a part of the semiconductor layer 408 .

[0177] Through the above steps, a thin film transistor in which a semiconductor layer is formed using an oxide semiconductor is manufactured. The thin film transistor according to the present embodiment can be the same as the thin film transistor described in the second embodiment. Like a membrane transistor, it is used for switching in pixels of a display device, such as an EL display device. The present invention can be applied to transistors for use in semiconductor memory devices.

[0178] Next, an insulating layer 418 having openings 420 and 422 is formed. The openings 420 and 422 can be formed in the same manner as the insulating layer 316 shown in the fourth embodiment. When an insulating layer is formed on the entire surface of the board, a resist mask is formed using photolithography. The insulating layer can be formed by etching the insulating layer using the mask. An insulating layer 418 having openings 420 and 422 is formed by using a printing method or a droplet discharging method. This is also fine.

[0179] Next, a first electrode 424 is formed on the insulating layer 418 so as to be connected through the opening 420. In this way, the switching element for the pixel of the display device shown in FIG. Thin film transistors can be fabricated.

[0180] Note that the first electrode 322 described in Embodiment 4 can be used as the first electrode 424 as appropriate. Cut.

[0181] Through the above steps, a thin film transistor can be formed on the prepreg. In this form, thin-film transistors can be formed directly on the prepreg without using a peeling process. Therefore, the number of steps for manufacturing the flexible element substrate can be reduced.

[0182] Next, as shown in FIG. 12(B), an insulating film 430 is formed so as to cover the end portion of the first electrode 424. The insulating film 430 is also called a bank, a partition, a barrier, a bank, etc., and is a photosensitive or non-photosensitive film. Organic materials (polyimide, acrylic, polyamide, polyimideamide, resist or benzo a silicon oxide film (e.g., a silicon oxide film containing an alkyl group), It has a thickness in the range of 0.8μm to 1μm.

[0183] Many oxide semiconductors function as the active layer of TFTs, such as zinc oxide (ZnO), Lead-containing indium oxide (IZO) and indium oxide, gallium oxide, and zinc oxide Since oxides (IGZO) and other materials are n-type semiconductors, TFs that have these compounds in the active layer The drain electrode of T serves as the cathode.

[0184] On the other hand, when a light-emitting element using an organic compound as a light-emitting material is connected to a TFT and driven, In order to avoid fluctuations in the gate voltage, it is preferable to connect the light emitting element to the drain electrode side. Therefore, the first electrode 424 connected to the drain electrode becomes a cathode, and the EL layer 43 is formed on it. 1 and a second electrode 432 that functions as an anode are laminated in this order (see FIG. 12(B)). The EL layer 431 is formed by using the same material as the EL layer 134 of the second embodiment and by a dry process such as a vapor deposition method. Alternatively, the second electrode 432 can be formed by a wet method such as an ink-jet method. The film is formed by deposition or sputtering.

[0185] The EL layer 431 is not a single layer, but is made up of an electron injection layer, an electron transport layer, a light emitting layer, a hole transport layer, a hole injection layer, and a In the case of a multi-layer structure having an insulating layer, a first electrode 424 that functions as a cathode is provided on the first electrode 424. The layers are stacked in this order, and finally, the second electrode 432 is formed as an anode. A light emitting element 440 can be formed in which the first electrode, the EL layer, and the second electrode are stacked.

[0186] In order to extract light emitted from the light-emitting layer containing an organic compound as a light-emitting substance, Either or both of the first electrode 424 and the second electrode 432 are made of indium tin oxide ( A transparent electrode such as ITO, or a thickness of several to several tens of nm that allows visible light to pass through. It is preferable that the electrode is formed of

[0187] Next, an insulating layer 433 is provided so as to completely cover the light-emitting element 440. In the case of the insulating layer 138, a film containing a carbon film, a silicon nitride film, or a silicon oxynitride film is used. The insulating film is used as a single layer or a laminated layer of a combination of layers. In this case, the film with good coverage is used as the insulating film. It is preferable to use the layer 433 as the light-emitting element portion 17 having the light-emitting element 440. 0 can be formed.

[0188] Next, the outer periphery of the element section 170 is processed as shown in FIG. When the insulating layer 400 functions as a film, the insulating layer 400, the gate insulating layer 404, and the insulating The edge layer 433 is dry etched to form a groove 406. By removing the insulating layer and the insulating layer 400 that functions as a base film, the protrusion 402 can be removed in a later process. This allows for thermal fusion of the repregs. A CHF3 mixed gas was used for dry etching. However, the present invention is not limited to this.

[0189] Next, a second structure in which a fibrous body 133a is impregnated with an organic resin 133b is applied to the surface of the insulating layer 433. Next, the first structure 132 and the second structure 133 are provided (see FIG. 12(C)). 133 is heated, and the organic resin 13 of each structure is applied to the groove 406 through the opening 422. 2b and 133b are pressed together and plasticized or hardened to bond them together.

[0190] As a result, the light-emitting device of the present invention having the light-emitting element sealed by the first and second structures is obtained. A device can be formed.

[0191] In the light emitting device of this embodiment, an element portion 170 is disposed approximately in the center of the cross section of the light emitting device. At the end where the element portion 170 is not present, the first structure 132 and the second structure 13 3 are in contact with each other and fixed to each other, sealing the element section 170. The second structure 133 has a region in close contact with the element section 170 so as to surround the outer periphery of the element section 170. The first structure 132 and the second structure 133 are formed from the same material, The adhesion of the structure can be improved.

[0192] In the light emitting device of the present invention, the pair of structures for sealing the element portion are provided to the light emitting device from the outside. It acts as an impact-resistant layer against the force (also called external stress) given by the structure. By doing so, it is possible to reduce the force applied locally, so that the force caused by external stress can be reduced. It is possible to prevent damage to the light emitting device, defective characteristics, etc., and thus to reduce the thickness and size. It is possible to provide a light emitting device having high reliability and durability while achieving the above. In the manufacturing process, defects in shape and characteristics caused by external stress are prevented, and light-emitting devices with high yields are produced. can be produced.

[0193] In addition, in this embodiment, a thin film transistor can be formed on the prepreg. In this way, the number of steps for manufacturing a flexible element substrate can be reduced. It can be used to prepare an EL display device.

[0194] (Embodiment 6) In this embodiment, a light emitting device using the present invention and an object of providing high reliability are provided. Another example of a method for manufacturing a light-emitting device will be described. The light-emitting device of the present invention has a pair of shock absorbing layers on the outer side of the pair of structures (opposite the light-emitting element). The manufacturing method will be described.

[0195] A method for manufacturing a light-emitting device according to this embodiment will be described with reference to FIG. 2(A) to 4(B), an element formation layer 12 is formed on a substrate 100. 4, and the element formation layer 124 is peeled off from the substrate 100 using an adhesive sheet.

[0196] Next, the first structure 132 and the first impact absorbing layer 103 are laminated, and the first structure 132 is The first structure 132 and the element formation layer 124, and the first structure 132 and the second structure 132 are bonded together by heating and pressing. The shock absorbing layer 103 of the first structure 132 is fixed to the element forming layer 124. In this case, the bonding process of the first structure 132 and the first impact absorbing layer 103 may be performed simultaneously. Alternatively, this may be performed in a separate step (see FIG. 13(A)).

[0197] It is preferable to use a material having a low elastic modulus and high breaking strength for the impact absorbing layer. For example, it has a rubber elasticity of 5 GPa to 12 GPa and a modulus of rupture of 300 MPa or more. A membrane having such a structure can be used.

[0198] Next, the EL layer 134 is formed on the first electrode 122. The EL layer 134 is made of a low molecular weight material. The EL layer 134 can be formed from either a polyimide or a polymer material. The materials include not only those made of organic compound materials but also those containing inorganic compounds in part. The EL layer has at least a light-emitting layer and has a single-layer structure consisting of one light-emitting layer. Alternatively, it may have a laminated structure of layers each having a different function. It may contain a layer having two or more functions simultaneously possessed by each layer.

[0199] The EL layer 134 can be formed by a deposition method, an inkjet method, a spin coat method, a dip A coating method, a nozzle printing method, or the like can be used regardless of whether it is a wet method or a dry method.

[0200] Next, the second electrode 136 is formed on the EL layer 134. This forms the first electrode 1 22, an EL layer 134, and a second electrode 136 are laminated to form a light emitting element 140. In addition, one of the first electrode 122 and the second electrode 136 is used as an anode and the other is used as a cathode. Used as a cathode.

[0201] Next, an insulating film that functions as a protective layer is formed on the second electrode 136 so as to cover the light emitting element 140. As a result, the element portion 170 is formed. can be done.

[0202] Next, the second structure 133 and the second impact absorbing layer 113 are laminated on the insulating layer 138. The second structure 133, like the first structure 132, is a fibrous body impregnated with an organic resin. Then, the second structure 133 is heated and compressed to be plasticized or hardened, and the first structure 133 is The second structure 133 and the second impact absorbing layer 113 are fixed to each other, and the element portion 170 is provided on the second structure 133 and the second impact absorbing layer 113. At the free end, the first structure 132 and the second structure 133 are bonded together. Therefore, the element section 170 including the light emitting element 140 is disposed between the first structure 132 and the second structure 133. The process of bonding the structure can be carried out under atmospheric pressure or is carried out under reduced pressure.

[0203] As a result of the above, a light emitting element having a pair of impact absorbing layers and sealed by a pair of structures is obtained. It is possible to form a light emitting device of the present invention.

[0204] The first structure 132 and the first shock absorbing layer 103, the second structure 133 and the second shock absorbing layer The adhesion to the organic layer 113 is achieved by organically bonding the fibrous body as the first structure 132 and the second structure 133. Because prepreg, a resin-impregnated structure, is used, direct heating and bonding can be performed without using an adhesive layer. The adhesion can be achieved by pressure treatment.

[0205] As shown in FIG. 13C, the first structure 132 and the second structure 133 have an element portion at the center. 170 are arranged, and the light emitting elements 140 are arranged in contact with each other at the end where the element portion 170 is not present. The element portion 170 including the above is sealed.

[0206] In this way, a pair of structures that seal the light emitting element achieves a thin and compact design. It is possible to provide a highly reliable light emitting device having resistance to the above-mentioned problems. It is also possible to prevent defects in shape and characteristics caused by external stress and to manufacture light-emitting devices with high yield. This can be done.

[0207] In addition, as in the present embodiment, a pair of structures and a pair of impact absorbing layers are provided for the element section 170. By arranging them symmetrically, the force acting on the light-emitting device can be more evenly distributed, so that the force caused by bending or warping can be reduced. This effect is achieved by preventing the pair of structures and the pair of shock absorbing layers from being damaged. If the two are made of the same material and have the same thickness, the same characteristics can be imparted, so the force diffusion The effect will be greater.

[0208] Note that this embodiment mode can be freely combined with other embodiment modes.

[0209] (Embodiment 7) In this embodiment, another example of a light-emitting device different from the light-emitting device shown in Embodiment 1 will be described. The manufacturing method will be described with reference to FIGS.

[0210] In this embodiment mode, a conductive layer is further added to the light-emitting device shown in FIG. Since the conductive layer can be provided on the outermost surface of the light-emitting device, a pair of A conductive layer may be provided on the outer surface of the structure (the surface opposite to the light-emitting element side). When a shock absorbing layer is provided on the outside of the structure as shown in FIG. A conductive layer may be provided.

[0211] The conductive layer dissipates static electricity applied by electrostatic discharge or reduces the local presence of charge. In order to prevent localization (to prevent localized potential difference from occurring), the static The conductive layer covers both sides of the element section 170 via an insulator. The conductive layer and the element portion 170 are not electrically connected to each other.

[0212] The conductive layer is provided on the entire surface of the region overlapping with the element portion 170 so as to cover at least the element portion 170. do.

[0213] The conductive layer may be provided on the surface of both the first structure and the second structure in the light emitting device. Alternatively, it may be provided on only one of the surfaces.

[0214] In FIG. 14A, a conductive layer 180 is provided on the outer side (opposite side to the light emitting element 140) of the second structure 133. In addition, in addition to the first structure 132 and the second structure 133, In this example, a first conductive layer 180a and a second conductive layer 180b are provided on the first and second sides of the substrate 11 and 12, respectively. In FIG. 14(B), the first conductive layer 180a and the second conductive layer 180b are electrically connected. This is not an example.

[0215] When a conductive layer is provided on each of the first structure 132 and the second structure 133, The conductive layers may be formed so as to be electrically connected to each other.

[0216] The conductive layer is placed so as to completely cover the periphery of the light-emitting device (top, bottom, and sides) (wrap around the light-emitting device). ) may be formed, or a pair of conductive layers provided on the outer sides of each impact-resistant layer may be electrically connected. The conductive region may be a part of a side surface of the light emitting device. The side surface of the light emitting device may be an electrode layer that penetrates the inside of the light emitting device. The cuts that occur when multiple light-emitting elements provided on an insulator are cut (divided) into individual light-emitting elements. The cut surface may be entirely or partially covered with the conductive layer. It may be used.

[0217] In addition, a conductive layer is formed so as to cover the entire periphery of the light-emitting device (upper surface (front surface), lower surface (rear surface), and side surfaces). In this case, the conductive layer 180 has a light-transmitting property at least in the display surface of the light-emitting device. The light-transmitting layer is formed using a material or with a thickness that allows light to pass through.

[0218] FIG. 15(A) shows a case in which the entire periphery of the light-emitting device (upper surface (front surface), lower surface (rear surface), and side surfaces) are covered. FIG. 15B shows an example in which a conductive layer 180 is formed on at least one side surface. FIG. 15C shows a structure in which a first conductive layer 180a is formed on the surface, The second conductive layer 180b is an electrode layer 181a that penetrates the inside of the light-emitting device. In this example, layers 181a and 181b are electrically connected. It may be processed by any physical process or by chemical processes such as etching. Alternatively, the processing may be performed using a laser beam.

[0219] In FIG. 15, a conductive layer is provided that is electrically connected to both the front and back surfaces. It is protected over a wide area against external static electricity and has a higher electrostatic breakdown voltage. A preventive effect can be obtained.

[0220] The conductive layer is formed by sputtering the surface of the structure after sealing the element section 170 with the pair of structures. When a conductive layer is formed on both of the pair of structures, a plurality of It may be produced by the process of

[0221] In addition, as shown in FIG. 1B, a shock absorber is provided on the outside of the structure (opposite the light-emitting element). In the case of providing a shock absorbing layer, a conductive layer is formed on the shock absorbing layer before bonding the shock absorbing layer to the structure. It's fine.

[0222] In FIG. 15, at least a portion of the first conductive layer 180a and the second conductive layer 180b is The first conductive layer 180a and the second conductive layer 180b are electrically connected to each other. Let us assume that.

[0223] By making the first conductive layer 180a and the second conductive layer 180b equipotential, the device is protected against static electricity. The effect of protection is obtained. Static electricity charges up the element part including the light emitting element and destroys it. Before this, the upper and lower surfaces of the light emitting device are set to the same potential to protect the element portion.

[0224] For example, the first structure and the second structure are structures in which a fibrous body is impregnated with an organic resin, The first and second shock absorbing layers are made of aramid film, and the conductive layer is made of titanium film. The thickness of the first and second structures may be 10 μm or more and 30 μm or less. The thickness of the impact relaxation layer is 3 μm or more and 15 μm or less, and the thickness of the element part including the light-emitting element is 1 μm or less. If the thickness is set to 5 μm or less, the first structure, the second structure, and the first impact Since the thickness of the buffer layer and the second impact buffer layer is thick, the element part is disposed almost at the center. It is possible to provide a light emitting device that is resistant to bending stress.

[0225] The conductive layer may be any layer that is conductive, and may be formed using a conductive material. There can be.

[0226] The conductive layer may be a film of a metal, a metal nitride, a metal oxide, or a laminate thereof. can be done.

[0227] The conductive layer may be made of, for example, titanium, molybdenum, tungsten, aluminum, copper, silver, gold, or nickel. Nickel, platinum, palladium, iridium, rhodium, tantalum, cadmium, zinc, iron, An element selected from silicon, germanium, zirconium, and barium, or a material containing the above elements as a main component The material may be an alloy material, a compound material, a nitride material, or an oxide material.

[0228] As the nitride material, tantalum nitride, titanium nitride, etc. can be used.

[0229] Oxide materials include indium tin oxide (ITO) and indium tin oxide containing silicon oxide. In addition, it is possible to use, for example, an organic indium oxide (ITSO), an organic tin oxide, or a zinc oxide. Indium Zinc Oxide (IZO) containing zinc oxide (ZnO) xide), zinc oxide containing gallium (Ga), tin oxide (SnO2), tungsten oxide Indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, titanium oxide Indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, etc. may also be used.

[0230] In addition, a semiconductor film in which an impurity element or the like is added to a semiconductor to give it conductivity can be used. For example, a polycrystalline silicon film doped with an impurity element such as phosphorus can be used. can be done.

[0231] Furthermore, a conductive polymer may be used as the conductive layer. As the conductive polymer, a so-called π-electron conjugated conductive polymer can be used. For example, Polyaniline and its derivatives, polypyrrole and its derivatives, polythiophene and copolymers of two or more of these.

[0232] The conductive layer is formed by various dry methods such as sputtering, plasma CVD, and deposition, as well as coating and printing. The insulating film can be formed by various wet methods such as a printing method or a droplet discharging method (ink-jet method). Moreover, various plating methods such as electrolytic plating and electroless plating may be used.

[0233] The conductive layer 180 is made of a light-transmitting material at least on the display surface of the light-emitting device. The display surface of the light-emitting device is formed by using a transparent film or by forming the film with a thickness that transmits light. When the conductive layer 180 is provided on the other surface that is not transparent, the conductive layer does not have to be transparent. I don't.

[0234] In addition, a protective layer may be laminated on the conductive layer. For example, a titanium film may be formed as the conductive layer, and a titanium film may be formed as the conductive layer. It is preferable to laminate a titanium oxide film as a protective layer on the titanium film. Even when a conductive layer is provided, the protective layer serves as the outermost surface, and deterioration of the conductive layer can be prevented.

[0235] The conductive layer covering the element section 170 prevents electrostatic damage (damage to the circuit) caused by electrostatic discharge from the element section 170. In addition, the pair of structures that seal the element portion 170 prevents malfunctions and damage to the semiconductor element. Thus, it is possible to provide a light emitting device that is thin and compact while having durability and high reliability. In addition, the manufacturing process can also prevent the shape and shape of the semiconductor device from being affected by external stress or electrostatic discharge. Defects in characteristics can be prevented and light emitting devices can be manufactured with high yield.

[0236] (Embodiment 8) In this embodiment, the light emitting device in the seventh embodiment is electrically connected to both sides (top and bottom). Another example of a method for manufacturing a light-emitting device having a conductive layer connected to the light-emitting element is shown in FIG. 1)(B2). In FIG. 16, FIG. 16(A2)(B2) is a plan view, and FIG. (A1) and (B1) are cross-sectional views taken along lines EF in the corresponding Figures 16(A2) and 16(B2), respectively. It is.

[0237] 16(A1) and 16(A2) show the light emitting device of this embodiment in the manufacturing process. The layer 103, the second impact mitigation layer 113, the first structure 132, and the second structure 133 are multiple. The laminate 144 is made up of a number of element parts 170 sealed together. This is before cutting into light emitting devices and includes a plurality of element portions 170. The first structure 132 and the second structure 133 are in contact with each other to provide a sealed region. The element portions 170 are individually sealed.

[0238] The first conductive layer 180 is formed on the outer surface of the first shock absorbing layer 103, which is the outermost surface of the laminate 144. a, a second conductive layer 180b is formed on the outer surface of the second shock absorbing layer 113. There are.

[0239] The laminate 144 having the first conductive layer 180a and the second conductive layer 180b is then formed into individual element parts. The light emitting devices 145a, 145b, 145c, 145d, 145e, and 145f are divided into (See FIG. 16(B1) and (B2)). 5d, 145e, and 145f each have a laminate 143 in which the laminate 144 is cut off.

[0240] In this embodiment, a process for electrically connecting the first conductive layer 180a and the second conductive layer 180b is performed. This step is carried out by a process of dividing the light emitting device (a process of dividing into individual light emitting elements). At the time of separation, the first impact mitigation layer 103, the second impact mitigation layer 113, the first structure 132, It is preferable to use a means in which the second structure 133 is melted (the first conductive layer 180 It is more preferable that the second conductive layer 180a and the second conductive layer 180b are fused together. The cutting is performed by irradiating a laser beam.

[0241] There are no particular limitations on the conditions such as the wavelength, intensity, and beam size of the laser light used in the above-mentioned cutting process. It is not limited to this. At least, it is sufficient that the light emitting device can be separated. Examples of such lasers include Ar lasers, Kr lasers, CO2 lasers, YAG lasers, and YVO4 lasers. The YLF laser, YAlO3 laser, GdVO4 laser, Y2O3 laser, ruby ​​laser Alexandrite laser, Ti:sapphire laser, helium cadmium laser, etc. Continuous wave laser, Ar laser, Kr laser, excimer (ArF, KrF, XeCl) laser Laser, CO2 laser, YAG laser, YVO4 laser, YLF laser, YAlO3 laser , GdVO4 laser, Y2O3 laser, Ruby laser, Alexandrite laser, Ti Pulse oscillation lasers such as sapphire lasers, copper vapor lasers, and gold vapor lasers can be used. can.

[0242] As shown in this embodiment, the individual light emitting devices 145a, 145b are irradiated with laser light. , 145c, 145d, 145e, and 145f, the first conductive layer 180a and The resistance between the first conductive layer 180a and the second conductive layer 180b decreases, and the resistance between the first conductive layer 180a and the second conductive layer 180b decreases. Therefore, the process of dividing the light emitting device into individual light emitting devices and the process of forming the first conductive layer are performed. The step of electrically connecting the first conductive layer 180a and the second conductive layer 180b can be performed at the same time. do.

[0243] Through the above steps, the light emitting device of this embodiment is a light emitting device 145a having a light emitting element. 45b, 145c, 145d, 145e, and 145f can be made.

[0244] In this embodiment, the conductive layer covering the element portion prevents static electricity from being discharged from the element portion 170. It prevents electrical breakdown (malfunction of the drive circuit and damage to the semiconductor element). It also seals the element part 170. The pair of structures and the impact mitigation layer provide a durable, thin and compact structure. In addition, a highly reliable light-emitting device can be provided without applying any external stress during the manufacturing process. To prevent defects in shape and characteristics caused by electrostatic discharge or electrostatic discharge, and to manufacture light-emitting devices with high yield. It is possible.

[0245] (Embodiment 9) In this embodiment mode, another example of a light-emitting device and a method for manufacturing the light-emitting device will be described with reference to FIG. do.

[0246] A method for manufacturing a light-emitting device according to this embodiment will be described with reference to FIGS. In the same manner as the process described in the second embodiment with reference to FIGS. 2A to 4A, The element formation layer 124 is then peeled off from the substrate 100 using an adhesive sheet. After the separation, the element formation layer 124 and the first structure 132 are fixed to each other. After the adhesive is plasticized, semi-cured, or cured, the adhesive sheet is removed (see FIG. 17(A)).

[0247] Next, the EL layer 134 is formed on the first electrode 122. The EL layer 134 is made of a low molecular weight material. The EL layer 134 can be formed from either a polyimide or a polymer material. The materials include not only those made of organic compound materials but also those containing inorganic compounds. The EL layer has at least a light-emitting layer and has a single-layer structure consisting of one light-emitting layer. Alternatively, the layer may have a laminated structure having layers each having a different function. The layer may include a layer having two or more of the functions described above at the same time.

[0248] The EL layer 134 can be formed by a deposition method, an inkjet method, a spin coat method, a dip A coating method, a nozzle printing method, or the like can be used regardless of whether it is a wet method or a dry method.

[0249] Next, the second electrode 136 is formed on the EL layer 134. This forms the first electrode 1 22, an EL layer 134, and a second electrode 136 are laminated to form a light emitting element 140. In addition, one of the first electrode 122 and the second electrode 136 is used as an anode and the other is used as a cathode. Used as a cathode.

[0250] Next, an insulating layer 138 that functions as a protective layer is formed on the second electrode 136 (FIG. 17). As a result, the element section 170 is formed.

[0251] Next, the end portion of the first structure 132 where the element portion 170 does not exist is irradiated with laser light or the like. The grooves 250 are formed in pairs so as to sandwich the element section 170. It is preferable that the insulating layer 140 is formed so as to surround the outer periphery of the element portion 170. In this embodiment, a groove having a width of 100 μm and a depth of 10 to 20 μm is formed by irradiating a laser beam. The grooves 250 may be formed before the EL layer 134 is formed.

[0252] Next, a second structure 133 is provided on the insulating layer 138. The second structure 133 also has a structure similar to that of the first structure. Similar to the structure 132, a structure in which a fibrous body is impregnated with an organic resin is used. The structure 133 is heated and compressed to plasticize or harden it, and the end where the element portion 170 is not present is The first structure 132 is bonded to the second structure 133 by pressing the second structure 133. The structure 133 extends into the groove 250, and the first structure 132 and the second structure 133 are connected in the groove 250. Since the structure 133 is physically fixed, the adhesive strength can be increased. Thus, the element section 170 including the light emitting element 140 is formed by the first structure 132 and the second structure 133. The process of compressing the structure can be carried out under atmospheric pressure or Work under reduced pressure.

[0253] As described above, the present embodiment has a light emitting element sealed by the first and second structures. A light emitting device having the above structure can be formed.

[0254] As shown in FIG. 17(C), an element portion 170 is disposed approximately in the center of the cross section of the light emitting device. At the end where the element portion 170 is not present, the first structure 132 and the second structure 13 3 are in contact with each other and fixed to each other, sealing the element portion 170.

[0255] In this way, a pair of structures that seal the light emitting element achieves a thin and compact design. It is possible to provide a highly reliable light emitting device having resistance to the above-mentioned problems. It is also possible to prevent defects in shape and characteristics caused by external stress and to manufacture light-emitting devices with high yield. This can be done.

[0256] As shown in this embodiment, a groove is formed in the first structure 132, and the second structure 1 By bonding the first structure 132 and the second structure 133 to each other, the adhesive strength between the first structure 132 and the second structure 133 is improved. This makes it possible to prevent film peeling.

[0257] Note that this embodiment mode can be freely combined with other embodiment modes.

[0258] (Embodiment 10) In this embodiment, a module type light emitting device to which an FPC is connected will be described with reference to FIG. FIG. 18A shows a light-emitting device manufactured by the manufacturing method shown in the above embodiment. FIG. 18(B) is a cross-sectional view taken along line ab in FIG. 18(A). be.

[0259] The light emitting devices shown in FIGS. 18A and 18B are manufactured by applying the method shown in any one of the above embodiments. The first structure 132 and the second structure 133 are made by impregnating a fibrous body with an organic resin. The element portion 170 and the terminal portion 502 are sealed by the body 133. A drive circuit for driving an optical element and a light-emitting element, and a switch for supplying a potential to the light-emitting element The terminal portion 502 includes a wiring 504, which is a switching element of the element portion. The terminal portion 502 can be formed at the same time as the wiring included in the element. 170 is simultaneously sealed by the first structure and the second structure.

[0260] The wiring 504 provided on the terminal section 502 is a flexible printed wiring that serves as an external input terminal. Board (flexible printed circuit: FPC) 505 to video This is the wiring that receives signals, clock signals, start signals, reset signals, etc. The configuration in which a printed wiring board (PWB) is attached to the FPC505 shown in FIG. The light emitting device in this specification includes not only the light emitting device itself but also an FPC Or it may include the state where the PWB is attached.

[0261] In FIG. 18B, a wiring 504 is provided in the terminal portion 502. The through wiring 503 is formed in the first structure 132 and the second structure 132. A through hole is formed in the structure 133 by a laser, a drill, a punching needle, or the like, and the through hole is Conductive resin is placed in the through holes by screen printing or inkjet printing. Conductive resin is a material that contains conductive particles with a particle size of several tens of micrometers or less. This refers to a substance dissolved or dispersed in a resin.

[0262] Conductive particles include, for example, copper (Cu), silver (Ag), nickel (Ni), and gold (Au). , Platinum (Pt), Palladium (Pd), Tantalum (Ta), Molybdenum (Mo), Titanium A conductive paste containing any one of the metal elements, Ti, and Cr, can be used. The organic resin contained in the oil functions as a binder, solvent, dispersant, and coating material for the metal particles. One or more organic resins selected from the following can be used. Representative examples include epoxy. Examples of the resin include organic resins such as resins, phenol resins, and silicone resins.

[0263] In addition, the through wiring 50 is formed without forming a through hole in the first structure 132 and the second structure 133. For example, a predetermined position on the first structure 132 or the second structure 133 may be formed. A conductive resin is placed in the first structure 132 and the second structure 133 to be conductive with the organic resin in the first structure 132 and the second structure 133. The organic resin in the structure dissolves due to a reaction with the organic resin contained in the conductive resin, making the structure conductive. Metal particles contained in the conductive resin are allowed to penetrate into the first structure 132 and the second structure 133. In this way, the through wiring 503 can be formed.

[0264] The FPC 505 serving as an external input terminal is provided on the first structure 132 and the second structure 133. Therefore, the conductive material included in the through-wire 503 is The conductive particles electrically connect the wiring 504 provided on the terminal portion 502 to the FPC 505. do.

[0265] In this manner, a modular light emitting device to which the FPC 505 is connected can be obtained.

[0266] Note that this embodiment mode can be freely combined with other embodiment modes.

[0267] (Embodiment 11) The light-emitting device described in the above embodiment can be used as a display portion of an electronic device. The electronic device described in the embodiment includes the light-emitting device described in the above embodiment. The method for manufacturing a light-emitting device shown in the above has a high yield and can provide a highly reliable light-emitting device. This makes it possible to produce electronic devices as final products with high throughput and good quality. It becomes possible to create it.

[0268] The light-emitting device manufactured using the light-emitting device shown in the above embodiment has a very wide range of application. This light-emitting device can be applied to electronic devices in a wide range of fields. For example, It can be used in the display of any electronic device, such as a computer, a mobile phone, or a camera. By using the light-emitting device described in the above embodiment for a display portion, the display device can be made thin and highly reliable. It is possible to provide a high-performance electronic device. Electronic devices such as displays equipped with the light-emitting devices described in the embodiments are suitable for portability and light weight. This makes it possible to produce a highly reliable product while achieving volumetric efficiency.

[0269] The light-emitting device described in the above embodiment can also be used as a lighting device. An embodiment of a lighting device using a light-emitting element according to the present invention will be described with reference to FIGS. explain.

[0270] FIG. 19 shows an example of a display device using a light emitting device according to the above embodiment as a backlight. The display device shown in FIG. 19 includes a housing 901, a liquid crystal layer 902, a backlight 903, and a The liquid crystal layer 902 is connected to a driver IC 905. The light emitting device shown in the above embodiment mode is used for the backlight 903. The current is supplied by the

[0271] By using the light emitting device according to the above embodiment as a backlight for a display device, A highly reliable and thin backlight can be obtained. Therefore, it is possible to make the display device thinner. Of course, the light-emitting device described in the above embodiment can be used in applications other than the backlight of a liquid crystal display device. The present invention can also be used as a flat or curved lighting device.

[0272] FIG. 20(A) shows a light emitting device to which the above embodiment is applied, which is an electric star, which is a lighting device. The desk lamp shown in FIG. 20(A) is an example of a desk lamp used as a lamp. The light emitting device according to the above embodiment is used as the light source 2102.

[0273] FIG. 20B shows that the light-emitting device shown in the above embodiment mode is used as an indoor lighting device 3001. The light emitting device of the present invention can be used as a thin lighting device. In addition, this light emitting device can be made flexible.

[0274] The lighting device is not limited to those shown in Figs. 19 and 20, and may be used for lighting in homes and public facilities. In such a case, the present invention can be applied to various lighting devices, including the above-mentioned. In the lighting device according to the present embodiment, the light emitting medium is in the form of a thin film, so that the degree of freedom in design is high. This allows us to provide the market with products with a wide variety of designs.

[0275] In this manner, the light-emitting device described in the above embodiment mode can provide low power consumption and highly reliable electronic devices. This embodiment can be freely combined with the above embodiment. It is possible. [Explanation of symbols]

[0276] 100 Substrates 102 Peeling layer 103 Impact mitigation layer 104 Insulating layer 106 Thin Film Transistor 108 Semiconductor layer 110 Gate insulating layer 112 Gate electrode 113 Shock absorbing layer 114 Insulating layer 116 Insulating Layer 118 Wiring 120 Insulating layer 122 First electrode 123 Insulating Layer 124 Device formation layer 128 Groove 130 Adhesive Sheet 132 First Structure 132a Fibrous body 132b Organic resin 133 Second Structure 133a Fibrous body 133b Organic resin 134 EL layer 136 Second Electrode 138 Insulating Layer 140 Light emitting element 143 Laminate 144 Laminate 145a Light emitting device 145b Light emitting device 145c Light Emitting Device 145d Light emitting device 145e Light emitting device 145f Light emitting device 150 First electrode 152 Insulating layer 153 Gate electrode 154 Conductive layer 156 Insulating Layer 158 Separate Film 159 Insulating Layer 160 EL layer 162 Second Electrode 164 Insulating Layer 170 Element section 180 Conductive Layer 180a First conductive layer 180b Second conductive layer 181a Electrode layer 181b Electrode layer 240 Light emitting element 250 groove 302 Peeling layer 304 Thin-film transistor 306 Gate electrode 308 Gate Insulation Layer 310 Semiconductor layer 312 Impurity semiconductor layer 314 Wiring 316 Insulating Layer 318 Insulating layer 321 Opening 322 First electrode 323 Insulating Layer 324 Device formation layer 326 Laser Light 327 Groove 328 Adhesive Sheet 340 Light emitting element 360 EL layer 362 Second Electrode 364 Insulating Layer 400 Insulation Layer 402 Gate electrode 404 Gate Insulation Layer 406 Groove 408 Semiconductor Layer 412 Wiring 414 Wiring 418 Insulating layer 420 Opening 422 Opening 424 First Electrode 430 Insulating film 431 EL layer 432 Second Electrode 433 Insulating Layer 440 Light emitting element 502 Terminal section 503 Through Wiring 504 Wiring 505 FPC 901 Case 902 Liquid crystal layer 903 Backlight 904 Case 905 Driver IC 906 Terminal 2101 Case 2102 Light source 3001 Lighting equipment

Claims

1. A method for producing a coating composition comprising: a first layer having an organic resin; a second layer having an organic resin; a first insulating layer, a second insulating layer, a transistor, and a light-emitting element electrically connected to the transistor; the semiconductor layer of the transistor and the pixel electrode of the light-emitting element are electrically connected via a first conductive layer and a second conductive layer; the semiconductor layer is an oxide semiconductor layer containing In, Ga, and Zn, The first conductive layer functions as a source electrode or a drain electrode, the first insulating layer is provided above the pixel electrode, the semiconductor layer is provided above the first insulating layer, a gate electrode of the transistor is provided above the semiconductor layer via the second insulating layer; the third insulating layer is provided above the gate electrode, the first conductive layer has a region in contact with an upper surface of the oxide semiconductor layer, a region in contact with an upper surface of the third insulating layer, and a region in contact with an upper surface of the second conductive layer; the second conductive layer is located above the second insulating layer and below the third insulating layer, and has a region in contact with an upper surface of the pixel electrode; the second conductive layer has the same material as the gate electrode; The gate electrode and the second conductive layer each have a region in contact with an upper surface of the second insulating layer.

2. a first layer having an organic resin; a second layer having an organic resin; a first insulating layer, a second insulating layer, a transistor, and a light-emitting element electrically connected to the transistor; the semiconductor layer of the transistor and the pixel electrode of the light-emitting element are electrically connected via a first conductive layer and a second conductive layer; the semiconductor layer is an oxide semiconductor layer containing In, Ga, and Zn, The first conductive layer functions as a source electrode or a drain electrode, the first insulating layer is provided above the pixel electrode, the semiconductor layer is provided above the first insulating layer, a gate electrode of the transistor is provided above the semiconductor layer via the second insulating layer; the third insulating layer is provided above the gate electrode, the first conductive layer has a region in contact with an upper surface of the oxide semiconductor layer, a region in contact with an upper surface of the third insulating layer, and a region in contact with an upper surface of the second conductive layer, the second conductive layer being located above the second insulating layer and below the third insulating layer and having a region in contact with an upper surface of the pixel electrode, the second conductive layer has the same material as the gate electrode; each of the gate electrode and the second conductive layer has a region in contact with an upper surface of the second insulating layer; the first conductive layer has a laminated structure including Ti and Al; The second conductive layer comprises Ti.

Images