Electronic device

Abstract

To provide an electronic apparatus capable of suppressing a reduction in reliability.SOLUTION: An electronic apparatus includes: an insulation base material having a belt-shaped portion having stretchability and an island-shaped portion connected to the belt-shaped portion; an organic insulation film disposed on the insulation base material; an inorganic insulation film disposed on the organic insulation film; wiring disposed between the belt-shaped portion and the organic insulation film; an electric element disposed on the inorganic insulation film and electrically connected to the wiring in the island-shaped portion; a partition wall overlapping the island-shaped portion and the belt-shaped portion and surrounding the electric element; and a sealing film for covering the electric element.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] An embodiment of the present invention relates to an electronic device. [Background technology]

[0002] In recent years, the use of flexible substrates having flexibility and stretchability has been considered in various fields. For example, a flexible substrate having electrical elements arranged in a matrix may be attached to a curved surface of an electronic device housing, a human body, etc. As the electrical elements, various sensors such as a touch sensor and a temperature sensor, and display elements may be used. In flexible substrates, measures must be taken to prevent the wiring from being damaged by stress caused by bending or stretching. As such a measure, for example, it has been proposed to make the wiring in a meandering shape. On the other hand, a technique is known in which an organic layer and a cathode (second electrode) are divided using a pixel dividing structure. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2017-113088 A [Patent Document 2] JP 2000-195677 A [Patent Document 3] JP 2008-135325 A Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the present embodiment is to provide an electronic device capable of suppressing a decrease in reliability. [Means for solving the problem]

[0005] The electronic device of this embodiment is The insulating substrate includes an insulating substrate having an elastic band-shaped portion and an island-shaped portion connected to the band-shaped portion, an organic insulating film arranged on the insulating substrate, an inorganic insulating film arranged on the organic insulating film, wiring arranged between the band-shaped portion and the organic insulating film, an electrical element arranged on the inorganic insulating film in the island-shaped portion and electrically connected to the wiring, a partition wall overlapping the island-shaped portion and the band-shaped portion and surrounding the electrical element, and a sealing film covering the electrical element.

[0006] The electronic device of this embodiment is The insulating substrate comprises an insulating substrate formed of a resin material, an organic insulating film disposed on the insulating substrate, an inorganic insulating film disposed on the organic insulating film, wiring disposed between the insulating substrate and the organic insulating film, an electrical element disposed on the inorganic insulating film and electrically connected to the wiring, a partition wall disposed on the inorganic insulating film and surrounding the electrical element, and a sealing film covering the electrical element, wherein the partition wall comprises a first layer formed of a metal material and in contact with the inorganic insulating film, and a second layer formed of the same inorganic insulating material as the sealing film and laminated on the first layer, and the second layer protrudes toward the electrical element and is in contact with the sealing film. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a schematic plan view of an electronic device 1 according to the present embodiment. [Diagram 2] FIG. 2 is a plan view showing an example of the flexible substrate 2. As shown in FIG. [Diagram 3] FIG. 3 is an enlarged plan view of one island I. [Figure 4] FIG. 4 is a cross-sectional view taken along line AA' of flexible substrate 2 including island portion I shown in FIG. [Diagram 5] FIG. 5 is a cross-sectional view taken along line BB' of flexible substrate 2 including island portion I shown in FIG. [Figure 6] FIG. 6 is a cross-sectional view taken along line CC' of flexible substrate 2 including island portion I shown in FIG. [Figure 7] FIG. 7 is an enlarged cross-sectional view showing an example of the configuration of the partition wall 30. As shown in FIG. [Figure 8] FIG. 8 is a diagram for explaining a method for manufacturing flexible substrate 2. As shown in FIG. [Figure 9] FIG. 9 is a diagram for explaining a method for manufacturing flexible substrate 2. As shown in FIG. [Figure 10] FIG. 10 is an enlarged cross-sectional view showing another example of the configuration of the partition wall 30. As shown in FIG. [Figure 11] FIG. 11 is a diagram for explaining another method of manufacturing the flexible substrate 2. In FIG. [Figure 12] FIG. 12 is a diagram for explaining another method of manufacturing the flexible substrate 2. In FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, the present embodiment will be described with reference to the drawings. Note that the disclosure is merely an example, and those who are skilled in the art can easily conceive of appropriate modifications while maintaining the gist of the invention are naturally included in the scope of the present invention. In addition, the drawings may be schematic in terms of width, thickness, shape, etc. of each part compared to the actual embodiment in order to make the explanation clearer, but they are merely examples and do not limit the interpretation of the present invention. In addition, in this specification and each figure, components that perform the same or similar functions as those described above with respect to the previous figures are given the same reference numerals, and duplicate detailed explanations may be omitted as appropriate.

[0009] 1 is a schematic plan view of an electronic device 1 according to this embodiment. In this embodiment, a first direction X, a second direction Y, and a third direction Z are defined as shown in the figure. The first direction X, the second direction Y, and the third direction Z are perpendicular to each other, but may intersect each other at an angle other than 90 degrees. The first direction X and the second direction Y correspond to, for example, a direction parallel to a main surface of the electronic device 1, and the third direction Z corresponds to a thickness direction of the electronic device 1.

[0010] The electronic device 1 includes a flexible substrate 2, a circuit substrate 3, and a controller 4. The circuit substrate 3 is, for example, a flexible printed circuit substrate, and is electrically connected to each terminal in a terminal area TA of the flexible substrate 2. The controller 4 is mounted on the circuit substrate 3, but may be mounted on the flexible substrate 2.

[0011] The flexible substrate 2 is configured to have flexibility and stretchability overall at least in the effective area AA. The flexible substrate 2 includes a first driver DR1, a second driver DR2, X wiring WX, Y wiring WY, an electric element SD, and the like. The first driver DR1 and the second driver DR2 are arranged on, for example, a flexible substrate 2, but may also be arranged on a circuit substrate 3, a controller 4, or another substrate. In the example shown in Fig. 1, the first driver DR1 and the second driver DR2 are arranged in an area outside the effective area AA. The area in which the first driver DR1 and the second driver DR2 are arranged may be an area having flexibility and stretchability like the effective area AA, or may be a hard area.

[0012] The X wiring WX is a general term for wirings that extend generally along the first direction X, and at least some of the X wirings WX are electrically connected to the first driver DR1. The multiple X wirings WX are aligned in the second direction Y. The Y wiring WY is a general term for wirings that extend generally along the second direction Y, and at least some of the Y wirings WY are electrically connected to the second driver DR2. The multiple Y wirings WY are aligned in the first direction X. These X wirings WX and Y wirings WY include multiple types of wirings such as scanning lines, signal lines, power supply lines, and various control lines.

[0013] The electric elements SD are arranged in a matrix in the first direction X and the second direction Y in the effective area AA, and are electrically connected to the X wirings WX and the Y wirings WY.

[0014] The electric element SD is, for example, a sensor, a semiconductor element, or an actuator. For example, the sensor may be an optical sensor that receives visible light or near-infrared light, a temperature sensor, a pressure sensor, or a touch sensor. For example, the semiconductor element may be a light-emitting element, a light-receiving element, a diode, or a transistor. Note that the electric element SD is not limited to those exemplified here, and elements having various other functions may also be used. The electric element SD may also be a capacitor, a resistor, or the like.

[0015] When the electric element SD is a light-emitting element, a flexible display having flexibility and stretchability can be realized. The light-emitting element may be, for example, a micro LED (Light Emitting Diode) with a longest side length of 100 μm or less, a mini LED with a longest side length of more than 100 μm and less than 300 μm, or an LED with a longest side length of 300 μm or more.

[0016] In one example, the electric element SD is an organic photodiode having an organic photoelectric conversion layer, which is a type of sensor, or an organic light-emitting diode (organic electroluminescence element) having an organic light-emitting layer, which is a type of light-emitting element.

[0017] The flexible substrate 2 includes an insulating base material 10, which will be described later. In one example, the first driver DR1, the second driver DR2, the X wiring WX, the Y wiring WY, and the electric element SD are all disposed on the insulating base material 10.

[0018] FIG. 2 is a plan view showing an example of the flexible substrate 2. As shown in FIG. The insulating substrate 10 is stretchable. Here, stretchable refers to the property of being able to expand and contract, that is, the property of being able to expand from a normal non-stretched state and to be able to restore its original shape when released from this stretched state. The non-stretched state is the state when no tensile stress is applied.

[0019] The insulating base material 10 is formed, for example, in a mesh shape. That is, the insulating base material 10 has a plurality of strip portions BX formed generally along the first direction X, a plurality of strip portions BY formed generally along the second direction Y, and a plurality of island portions I. The plurality of strip portions BX are arranged in the second direction Y, and the plurality of strip portions BY are arranged in the first direction X. Each of the strip portions BX and BY is stretchable. In one example, each of the strip portions BX and BY is meandering. Note that, as another form of the stretchable strip portions BX and BY, they may be linear strip portions to which a stretchable material such as silver nanowires or carbon nanotubes is applied. In addition, the strip portions BX and BY are not limited to the example of meandering in the XY plane, but may be meandering in the XZ plane or the YZ plane. The island portion I corresponds to the intersection of the strip portion BX and the strip portion BY.

[0020] The island portions I are arranged in a matrix in the first direction X and the second direction Y. The island portions I adjacent to each other in the first direction X are connected by a strip portion BX, and the island portions I adjacent to each other in the second direction Y are connected by a strip portion BY. A plurality of strip portions BX and a plurality of strip portions BY are connected to one island portion I. The island portion I may be a quadrangle such as a square, a rectangle, or a diamond, or may be another polygon, or may be another shape such as a circle or an ellipse. The strip portions BX and BY may be connected to the corners of the island portion I, or may be connected to the sides of the island portion I.

[0021] In other words, the insulating base material 10 has a plurality of first openings (through holes) OP1. The plurality of first openings OP1 are arranged in a matrix in the first direction X and the second direction Y. Each first opening OP1 is surrounded by the outer edge 10E of the insulating base material 10 in a plan view. Alternatively, each first opening OP1 is surrounded by two strip portions BX adjacent to each other in the second direction Y and two strip portions BY adjacent to each other in the first direction X.

[0022] The strip portion BY is located between two adjacent first openings OP1 in the first direction X. The strip portion BX is located between two adjacent first openings OP1 in the second direction Y. The shapes of each of the first openings OP1 are substantially the same.

[0023] The strip portions BX and BY have one or more curved portions C. Such a shape is sometimes called a meander pattern. However, the shape of the strip portions BX and BY is not limited to the example of FIG. 2. The shapes of the strip portions BX and BY may be the same as each other or may be different from each other.

[0024] The insulating base material 10 is made of, for example, polyimide. Note that the material of the insulating base material 10 is not limited to polyimide, and other resin materials may also be used.

[0025] The X wiring WX is disposed on the strip portion BX and meanders in the same manner as the strip portion BX, and the Y wiring WY is disposed on the strip portion BY and meanders in the same manner as the strip portion BY.

[0026] The electric element SD is disposed on the island-shaped portion I and is electrically connected to the X wiring WX and the Y wiring WY. For example, one electric element SD is disposed on one island-shaped portion I, but multiple electric elements SD may be disposed thereon.

[0027] FIG. 3 is an enlarged plan view of one island I. Two strip portions BX and two strip portions BY are connected to the island portion I. That is, the island portion I is located between the strip portions BX in the first direction X, and between the strip portions BY in the second direction Y.

[0028] In a plan view, the partition 30 overlaps the island portion I and surrounds the electric element SD located in the island portion I. The partition 30 also overlaps the strip portions BX and BY, and overlaps the X wiring WX and the Y wiring WY. In the illustrated example, the partition 30 is formed so as to surround a cross-shaped region including the region in which the electric element SD is arranged.

[0029] Fig. 4 is a cross-sectional view taken along line A-A' of the flexible substrate 2 including the island portion I shown in Fig. 3. Fig. 5 is a cross-sectional view taken along line B-B' of the flexible substrate 2 including the island portion I shown in Fig. 3. Fig. 6 is a cross-sectional view taken along line CC' of the flexible substrate 2 including the island portion I shown in Fig. 3.

[0030] The flexible substrate 2 includes an insulating base material 10, an inorganic insulating film 11, a wiring layer 21, an inorganic insulating film 12, a wiring layer 22, an inorganic insulating film 13, an organic insulating film 14, an inorganic insulating film 15, an electrical element SD, a sealing film 16, and a partition wall 30.

[0031] In some cases, the entire flexible substrate 2 is covered with a stretchable protective film. Although the protective film is not shown, the rear surface of the insulating base material 10 and the surface of the sealing film 16 may be covered with a protective film.

[0032] The inorganic insulating film 11 is disposed on the insulating base material 10, and extends across the island portion I, the strip portion BX, and the strip portion BY. The wiring layer 21 is disposed on the inorganic insulating film 11. The inorganic insulating film 12 is disposed on the wiring layer 21 and the inorganic insulating film 11. The wiring layer 22 is disposed on the inorganic insulating film 12. The inorganic insulating film 13 is disposed on the wiring layer 22 and the inorganic insulating film 12. The organic insulating film 14 is disposed on the inorganic insulating film 13. The inorganic insulating film 15 is disposed on the organic insulating film 14. The inorganic insulating film 12, the inorganic insulating film 13, the organic insulating film 14, and the inorganic insulating film 15 extend across the island portion I, the strip portion BX, and the strip portion BY, similar to the inorganic insulating film 11.

[0033] Each of the inorganic insulating films 11 and 12 is formed as a multilayer body in which a plurality of insulating layers are stacked. In one example, each of the inorganic insulating films 11 and 12 includes an insulating layer formed of silicon nitride and an insulating layer formed of silicon oxide. Note that the inorganic insulating films 11 and 12 may be formed as a single layer body.

[0034] The inorganic insulating film 13 is, for example, an insulating layer formed as a single layer of silicon oxide. The inorganic insulating film 13 may be another insulating layer formed as a single layer of silicon nitride, or may be formed as a multilayer of multiple insulating layers.

[0035] The inorganic insulating film 15 is formed, for example, as a single layer, and is an insulating layer made of silicon nitride, aluminum oxide, etc. Such an inorganic insulating film 15 suppresses the penetration of moisture into the organic insulating film 14, or the diffusion of moisture contained in the organic insulating film 14 to the electric element SD. The inorganic insulating film 15 may be formed as a multilayer body of multiple insulating layers.

[0036] The wiring layer 21 is electrically connected to either the X wiring WX or the Y wiring WY shown in FIG. 2 and the like. The wiring layer 22 is electrically connected to the other of the X wiring WX and the Y wiring WY. In one example, the wiring layer 21 located in the strip portion BX is the X wiring WX, the wiring layer 21 located in the island portion I is a wiring or an electrode electrically connected to the X wiring WX, the wiring layer 22 located in the strip portion BY is the Y wiring WY, and the wiring layer 22 located in the island portion I is a wiring or an electrode electrically connected to the Y wiring WY. In other words, the X wiring WX is disposed between the strip portion BX and the organic insulating film 14, and the Y wiring WY is disposed between the strip portion BY and the organic insulating film 14. The wiring layers 21 and 22 are formed from a metal material such as molybdenum, tungsten, titanium, or aluminum.

[0037] The partition wall 30 includes a first layer 31 in contact with the inorganic insulating film 15, and a second layer 32 laminated on the first layer 31. The first layer 31 is made of a material different from the second layer 32. In one example, the first layer 31 is made of a metal material, but may be made of an insulating material. The second layer 32 is made of an insulating material, but may be made of a metal material. Details of the partition wall 30 will be described later.

[0038] The electric element SD is disposed on the inorganic insulating film 15 in the island portion I. The electric element SD includes a lower electrode E1, an upper electrode E2, and an organic layer OL. For example, when the electric element SD is an organic photodiode including an organic photoelectric conversion layer as the organic layer OL, one of the lower electrode E1 and the upper electrode E2 functions as an anode of the electric element SD, and the other of the lower electrode E1 and the upper electrode E2 functions as a cathode of the electric element SD.

[0039] The lower electrode E1 is disposed on the inorganic insulating film 15 and is in contact with the inorganic insulating film 15. The lower electrode E1 is patterned for each electric element SD (or for each island-shaped portion I). The lower electrode E1 is spaced apart from the partition wall 30.

[0040] Such a lower electrode E1 is formed of, for example, a transparent conductive material such as indium tin oxide or indium zinc oxide, or a metal material such as silver, titanium, or aluminum. The lower electrode E1 may be formed as a single layer of a transparent conductive material, a single layer of a metal material, or a multilayer body. In the illustrated example, the lower electrode E1 is formed as a multilayer body of a metal layer E11 formed of a metal material and a transparent conductive layer E12 formed of a transparent conductive material, and the transparent conductive layer E12 covers the metal layer E11.

[0041] The organic layer OL is disposed on the lower electrode E1 and is in contact with the lower electrode E1. The organic layer OL extends to the outside of the lower electrode E1, and is disposed on the inorganic insulating film 15 between the partition wall 30 and the lower electrode E1 and is in contact with the inorganic insulating film 15. The organic layer OL may include a hole transport layer and an electron transport layer in addition to the active layer.

[0042] The upper electrode E2 is disposed on the organic layer OL and is in contact with the organic layer OL. The upper electrode E2 is also in contact with the first layer 31 of the partition wall 30. The upper electrode E2 is formed of a transparent conductive material such as indium tin oxide or indium zinc oxide. When the first layer 31 is a conductive layer formed of a metal material, the upper electrode E2 is in contact with the first layer 31, whereby the upper electrode E2 and the partition wall 30 are electrically connected to each other.

[0043] The organic layer OL and the upper electrode E2 extend not only to the electric element SD but also to the outside of the region surrounded by the partition 30. That is, of the electric element SD, the lower electrode E1 is disposed in the island portion I and surrounded by the partition 30, but the organic layer OL and the upper electrode E2 extend not only to the island portion I but also to the strip portion BX and strip portion BY outside the partition 30.

[0044] Moreover, the upper electrode E2 is in contact with the first layer 31 even on the outside of the partition 30. As a result, when the first layer 31 is a conductive layer, the illustrated upper electrode E2 is electrically connected to the upper electrode E2 of another electric element SD located in an adjacent island-shaped portion I. In other words, the upper electrode E2 is a common electrode disposed across a plurality of electric elements SD.

[0045] The sealing film 16 covers the electric element SD. The sealing film 16 also covers the partition wall 30. In the illustrated example, the sealing film 16 is in contact with both the first layer 31 and the second layer 32 of the partition wall 30. The sealing film 16 is an inorganic insulating film, and is, for example, an insulating layer formed from an inorganic insulating material such as silicon nitride, aluminum oxide, etc. In one example, the sealing film 16 is formed from the same material as the second layer 32. Therefore, the adhesion between the second layer 32 and the sealing film 16 is high, and high sealing performance can be achieved.

[0046] 7 is an enlarged cross-sectional view showing an example of the configuration of the partition wall 30. Note that the illustration of the insulating base material 10 to the inorganic insulating film 13 is omitted.

[0047] As described above, the partition 30 includes the first layer 31 and the second layer 32. The first layer 31 has a first side surface S1 facing the electric element SD, a second side surface S2 opposite to the first side surface S1, and a first upper surface U1 between the first side surface S1 and the second side surface S2. The first side surface S1 corresponds to the inner surface of the partition 30 that surrounds the electric element SD, and the second side surface S2 corresponds to the outer surface of the partition 30.

[0048] The second layer 32 has a bottom surface B2 in contact with the first top surface U1, a third side surface S3 facing the electric element SD, a fourth side surface S4 opposite the third side surface S3, and a second top surface U2 between the third side surface S3 and the fourth side surface S4. The bottom surface B2 extends from the first side surface S1 toward the electric element SD, and also extends from the second side surface S2 toward the outside (the side opposite the electric element SD). In other words, the second layer 32 protrudes from the first side surface S1 toward the electric element SD, and further protrudes from the second side surface S2 toward the side opposite the electric element SD.

[0049] The organic layer OL and the second electrode E2 are laminated on the second layer 32, but are spaced apart from the organic layer OL and the second electrode E2 that constitute the electric element SD. In the example shown in Figure 7, of the second layer 32, the third side surface S3, the fourth side surface S4, and the second upper surface U2 are in contact with the organic layer OL, but the bottom surface B2 between the first side surface S1 and the third side surface S3, and the bottom surface B2 between the second side surface S2 and the fourth side surface S4 are exposed from the organic layer OL and the second electrode E2.

[0050] Such a partition 30 separates the organic layer OL and the upper electrode E2 constituting the electric element SD from the organic layer OL and the upper electrode E2 located outside the electric element SD. However, the upper electrode E2 is in contact with the first side surface S1 and the second side surface S2 of the first layer 31 which is a conductive layer. As a result, although the upper electrode E2 is separated into an inner region and an outer region surrounded by the partition 30, they are electrically connected to each other via the partition 30 (or the first layer 31).

[0051] The sealing film 16 contacts the first side surface S1 and the second side surface S2 of the first layer 31. In addition, the sealing film 16 contacts the bottom surface B2 of the second layer 32 between the first side surface S1 and the third side surface S3 and between the second side surface S2 and the fourth side surface S4.

[0052] As described above, the organic layer OL and upper electrode E2 of the electric element SD arranged in the island-shaped portion I are separated from the organic layer OL and upper electrode E2 arranged in the strip-shaped portion BX and strip-shaped portion BY, respectively, by the partition wall 30. Therefore, even if cracks occur in the sealing film 16, which is an inorganic film, or the upper electrode E2 due to deformation of the strip-shaped portions BX and BY having elasticity, the propagation of the cracks to the island-shaped portion I is suppressed. Therefore, the occurrence of cracks in the sealing film 16 covering the electric element SD, peeling of the sealing film 16 from the upper electrode E2, and further peeling of the upper electrode E2 from the organic layer OL are suppressed.

[0053] Furthermore, even if moisture penetrates through cracks that occur in the strip portions BX and BY, the moisture penetration path toward the electric element SD is blocked by the partition 30, so deterioration of the electric element SD due to moisture is suppressed.

[0054] This prevents the electric element SD from being deteriorated by the outside air or moisture, thereby preventing a decrease in reliability.

[0055] Next, a method for manufacturing the flexible substrate 2 will be described with reference to Figures 8 and 9. Note that in each figure, the layers from the insulating base material 10 to the inorganic insulating film 13 are omitted.

[0056] First, an inorganic insulating film 11 is formed on an insulating base material 10 made of, for example, polyimide, and then a wiring layer 21, an inorganic insulating film 12, a wiring layer 22, an inorganic insulating film 13, an organic insulating film 14, and an inorganic insulating film 15 are formed in this order.

[0057] Next, as shown in the upper part of FIG. 8, a metal layer M is formed on the inorganic insulating film 15, and then an insulating layer of, for example, aluminum oxide is formed, and the insulating layer is patterned into a predetermined shape to form a second layer 32. Thereafter, as shown in the middle part, the metal layer M is etched using the second layer 32 as a mask to form the first layer 31. Note that, during the etching, a resist may be provided to protect the second layer 32. At this time, the etching is performed under the condition that the width W1 of the first layer 31 is smaller than the width W2 of the second layer 32. Thereafter, as shown in the lower part, a metal layer E11 is formed as a lower electrode E1 on the inorganic insulating film 15, and then a transparent conductive layer E12 is formed to cover the metal layer E11. Between the lower electrode E1 and the first layer 31, the inorganic insulating film 15 is exposed.

[0058] 9, an organic layer OL is formed by, for example, a vacuum deposition method. At this time, vapor from the deposition source passes through a region where the partition 30 does not exist and reaches the lower electrode E1 and the inorganic insulating film 15. The vapor from the deposition source does not reach a region in the shadow of the second layer 32 of the partition 30 (the first side surface S1 and the second side surface S2 of the first layer 31). Then, as shown in the middle part, the upper electrode E2 is formed by, for example, a sputtering method. At this time, vapor from the deposition source passes through a region where the partition wall 30 does not exist, and reaches the top of the organic layer OL and also reaches the first side surface S1 and the second side surface S2 of the first layer 31. Thereafter, as shown in the lower part, a sealing film 16 made of, for example, aluminum oxide is formed by vapor deposition. The sealing film 15 is formed so as to cover the electric elements SD and the partition walls 30. In this way, the flexible substrate 2 is manufactured.

[0059] As described above, the organic layer OL and the upper electrode E2 of the electric element SD are formed without using a fine mask. Therefore, compared with the case where a fine mask is used, the manufacturing cost can be reduced, and the process of aligning the fine mask and the like is not required, so that the organic layer OL and the upper electrode E2 of a desired shape can be easily formed.

[0060] Next, other configuration examples of the partition wall 30 will be described.

[0061] 10 is an enlarged cross-sectional view showing another example of the configuration of the partition wall 30. Note that the illustration of the insulating base material 10 to the inorganic insulating film 13 is omitted.

[0062] The first layer 31 has a first side surface S1 facing the electric element SD, a second side surface S2 opposite the first side surface S1, and a first upper surface U1 between the first side surface S1 and the second side surface S2. The second layer 32 has a bottom surface B2 in contact with the first top surface U1, a third side surface S3 facing the electric element SD, a fourth side surface S4 on the opposite side of the third side surface S3, and a second top surface U2 between the third side surface S3 and the fourth side surface S4. The third side surface S3 and the fourth side surface S4 overlap the first top surface U1. That is, the second layer 32 does not protrude from the first side surface S1 toward the electric element SD, and does not protrude from the second side surface S2 toward the opposite side of the electric element SD. In the example shown in FIG. 10, the third side surface S3 overlaps the first side surface S1, and the fourth side surface S4 overlaps the second side surface S2. In the partition wall 30, the first side surface S1 and the third side surface S3 correspond to the inner surface surrounding the electric element SD, and the second side surface S2 and the fourth side surface S4 correspond to the outer surface.

[0063] The electric element SD includes a lower electrode E1, an organic layer OL, and an upper electrode E2. The lower electrode E1 and the organic layer OL are spaced apart from the partition 30. The upper electrode E2 is in contact with the inorganic insulating film 15 between the partition 30 and the organic layer OL. The upper electrode E2 is in contact with the first side surface S1 and the third side surface S3, and a part of the upper electrode E2 is disposed on the second upper surface U2.

[0064] Outside the partition 30, the organic layer OL is not disposed. That is, outside the partition, the upper electrode E2 is in contact with the inorganic insulating film 15 without the organic layer OL therebetween. The upper electrode E2 is in contact with the second side surface S2 and the fourth side surface S4. The upper electrode E2 has a slit SL on the second upper surface U2. The slit SL is formed in the same shape as the partition 30 shown in FIG. 3 in a plan view, for example, and surrounds the electronic element SD.

[0065] The sealing film 16 covers the upper electrode E2. The sealing film 16 also contacts the second upper surface U2 of the second layer 32 at the slit SL.

[0066] Next, a method for manufacturing the flexible substrate 2 will be described with reference to Figures 11 and 12. Note that in each figure, the layers from the insulating base material 10 to the inorganic insulating film 13 are omitted.

[0067] First, an inorganic insulating film 11 is formed on an insulating base material 10 made of, for example, polyimide, and then a wiring layer 21, an inorganic insulating film 12, a wiring layer 22, an inorganic insulating film 13, an organic insulating film 14, and an inorganic insulating film 15 are formed in this order.

[0068] 11, a partition wall 30 is formed by laminating a first layer 31 and a second layer 32 on the inorganic insulating film 15. The first layer 31 is formed by patterning a metal layer, and the second layer 32 is formed by patterning an insulating layer, but the patterning of the metal layer and the insulating layer may be performed together or separately. Then, as shown in the middle part, a metal layer E11 is formed as a lower electrode E1 on the inorganic insulating film 15, and then a transparent conductive layer E12 is formed to cover the metal layer E11. Between the lower electrode E1 and the partition wall 30, the inorganic insulating film 15 is exposed. Thereafter, as shown in the lower part, an organic layer OL is formed by, for example, a vacuum deposition method. At this time, a mask with an opening is applied so that the vapor from the deposition source can reach a desired region. As a result, the vapor for forming the organic layer OL reaches the lower electrode E1 but does not reach the partition wall 30 or the region outside the partition wall 30.

[0069] 12, the upper electrode E2 is formed by, for example, a sputtering method. At this time, vapor from a deposition source reaches almost the entire surfaces of the organic layer OL, the inorganic insulating film 15, and the partition wall 30. Then, a part of the upper electrode E2 covering the second upper surface U2 is removed to form a slit SL. Thereafter, as shown in the lower part, a sealing film 16 is formed by vapor deposition so as to cover the upper electrode E2 and to be in contact with the second layer 32 at the slit SL, thereby completing the flexible substrate 2.

[0070] In this other configuration example as well, the upper electrode E2 of the electric element SD arranged in the island portion I is separated from the upper electrodes E2 arranged in the strip portions BX and BY by the partition wall 30. Therefore, even if cracks occur in the inorganic sealing film 16 or the upper electrode E2 due to deformation of the stretchable strip portions BX and BY, the propagation of the cracks to the island portion I is suppressed. Therefore, the same effect as described above can be obtained.

[0071] As described above, according to the present embodiment, it is possible to provide an electronic device capable of suppressing a decrease in reliability.

[0072] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included in the scope and spirit of the invention, and are included in the scope of the invention and its equivalents described in the claims. [Explanation of symbols]

[0073] 1...Electronic device 2...Flexible substrate 10... Insulating substrate I... Island-shaped portion BX, BY... Strip-shaped portion SD: Electrical element E1: Lower electrode OL: Organic layer E2: Upper electrode WX…X wiring WY…Y wiring 11... inorganic insulating film 12... inorganic insulating film 13... inorganic insulating film 14... organic insulating film 15... inorganic insulating film 16... sealing film 21...Wiring layer 22...Wiring layer 30...Partition wall 31...First layer 32...Second layer

Claims

1. An insulating substrate having a stretchable strip portion and an island portion connected to the strip portion; an organic insulating film disposed on the insulating substrate; an inorganic insulating film disposed on the organic insulating film; a wiring disposed between the strip portion and the organic insulating film; an electric element disposed on the inorganic insulating film in the island-shaped portion and electrically connected to the wiring; a partition wall overlapping the island-shaped portion and the strip-shaped portion and surrounding the electric element; A sealing film covering the electric element; Electronic equipment equipped with

2. The partition wall is A first layer in contact with the inorganic insulating film; a second layer formed of the same inorganic insulating material as the sealing film and laminated on the first layer; The electronic device according to claim 1 , wherein the second layer is in contact with the sealing film.

3. the first layer has a first side facing the electrical element, a second side opposite the first side, and a first top surface; the second layer has a bottom surface in contact with the first top surface; The electronic device according to claim 2 , wherein the bottom surface extends from the first side surface toward the electric element and extends outward from the second side surface.

4. The electronic device according to claim 3 , wherein the sealing film is in contact with the first side surface, the second side surface, and the bottom surface.

5. the first layer is formed of a metal material; The electric element is a lower electrode disposed on the inorganic insulating film; an organic layer disposed on the lower electrode; a top electrode disposed over the organic layer; the lower electrode is spaced from the partition wall; The electronic device according to claim 4 , wherein the upper electrode is in contact with the first side surface of the first layer.

6. the first layer has a first side facing the electrical element, a second side opposite the first side, and a first top surface; the second layer has a bottom surface in contact with the first top surface, a third side surface facing the electrical element, a fourth side surface opposite the third side surface, and a second top surface; The electronic device according to claim 2 , wherein the third side surface and the fourth side surface overlap the first upper surface.

7. The electronic device according to claim 6 , wherein the sealing film is in contact with the second upper surface.

8. the first layer is formed of a metal material; The electric element is a lower electrode disposed on the inorganic insulating film; an organic layer disposed on the lower electrode; a top electrode disposed over the organic layer; the lower electrode is spaced from the partition wall; The electronic device according to claim 7 , wherein the upper electrode is in contact with the first side surface of the first layer and the third side surface of the second layer.

9. The electronic device according to claim 2 , wherein the inorganic insulating film, the second layer, and the sealing film are made of silicon nitride or aluminum oxide.

10. The electronic device according to claim 1 , wherein the electric element is a light-emitting element or a sensor.

11. The electronic device according to claim 1 , wherein the strip portion is serpentine.

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