Model data providing device and model data providing method

Abstract

To provide a customer with simulation data considering a joint member used when a semiconductor package is mounted on a mounting substrate.SOLUTION: Simulation data according to the present embodiment is submitted to a simulation device to generate a simulation model, and has a structure including a first data element for modeling heat conduction of a semiconductor package and a second data element for modeling heat conduction of a joint member when the semiconductor package is mounted on a mounting substrate. When the simulation data is submitted to the simulation device, it is integrated with a simulation program included in the simulation device to generate a thermal analysis model based on the first data element and the second data element and outputs a simulation result using the thermal analysis model.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] An embodiment of the present invention relates to simulation data, a model data providing device, and a model data providing method. [Background technology]

[0002] For example, the need for MBD (Model Base Design) is increasing for semiconductor packages for automobiles and power electronics. For this reason, semiconductor package manufacturers provide information on the thermal conduction of the semiconductor packages they ship to customers as simulation data. However, the simulation data does not include the conditions of the thermal analysis model for the joining materials such as solder used when mounting the semiconductor package on the customer's mounting board.

[0003] Furthermore, even if the conditions for the bonding materials are included in the simulation data used to generate the thermal analysis model, the conditions for the bonding materials used during implementation vary depending on the customer. Naturally, if the conditions for the bonding materials used by the customer differ, the simulation results will also differ. For this reason, even if the thermal analysis model for the bonding materials is included in the simulation data provided by the manufacturer, there will be a discrepancy between the results of the thermal analysis simulation performed by the customer and the actual state of heat conduction. Summary of the Invention [Problem to be solved by the invention]

[0004] An object of this embodiment is to provide a customer with simulation data that takes into account the bonding materials used when mounting a semiconductor package on a mounting board. [Means for solving the problem]

[0005] The simulation data according to this embodiment is Simulation data for generating a simulation model by being input to a simulation device, a first data element for modeling thermal conduction of the semiconductor package; second data elements for modeling thermal conduction of a bonding member when the semiconductor package is mounted on a mounting board; The structure includes: When input to the simulation device, it is integrated with a simulation program provided in the simulation device, generates a thermal analysis model based on the first data elements and the second data elements, and outputs simulation results using this thermal analysis model.

[0006] The model data providing device according to this embodiment includes: A model data providing device that provides simulation data to be input to a simulation device to generate a simulation model, The simulation data is a first data element for modeling thermal conduction of the semiconductor package; second data elements for modeling thermal conduction of a bonding member when the semiconductor package is mounted on a mounting board; The structure includes: When the simulation data is input into the simulation device, it is integrated with a simulation program provided in the simulation device, a thermal analysis model is generated based on the first data elements and the second data elements, and simulation results using this thermal analysis model are output.

[0007] The model data providing method according to the present embodiment includes the steps of: A model data providing method for providing simulation data, which is input to a simulation device to generate a simulation model, by a model data providing device, comprising: a first data element for modeling thermal conduction of the semiconductor package; second data elements for modeling thermal conduction of a bonding member when the semiconductor package is mounted on a mounting board; A model data providing device provides simulation data of a structure including the above structure, When the simulation data is input to the simulation device, it is integrated with a simulation program provided in the simulation device, and the simulation device generates a thermal analysis model based on the first data element and the second data element. [Brief description of the drawings]

[0008] [Figure 1] FIG. 1 is a block diagram illustrating a configuration of a simulation system according to an embodiment of the present invention. [Diagram 2] 1 is a cross-sectional view illustrating an example of a structure of a semiconductor package according to an embodiment of the present invention and a structure of a mounting substrate on which the semiconductor package is mounted using a bonding member. [Diagram 3] FIG. 4 is a diagram showing an example of a thermal analysis model used in a simulation in the simulation device. [Figure 4] 3 is a view showing an example of a see-through image of the mounting board, the bonding member, and the semiconductor package shown in FIG. 2. [Diagram 5] FIG. 13 is a graph showing a simulation result of transient heat when voids are taken into account and a simulation result of transient heat when voids are not taken into account. [Figure 6] FIG. 4 is a flowchart illustrating the contents of a simulation process executed in the entire simulation system according to the embodiment. [Figure 7] FIG. 2 is a diagram showing an example of a data structure of simulation data generated by the model data generating device according to the embodiment. [Figure 8] FIG. 4 is a diagram showing an example of simulation data generated by the model data generating device according to the embodiment. [Figure 9] FIG. 4 is a diagram showing an example of a thermal analysis model condition input screen displayed on a display of the simulation device according to the embodiment. [Figure 10] 1 is a diagram showing an example of a perspective image of a mounting board on which a semiconductor package is mounted, which is used for image analysis by the simulation device; DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, a simulation system according to the present embodiment will be described with reference to the drawings. In the following description, components having substantially the same functions and configurations are denoted by the same reference numerals, and duplicated descriptions will be given only when necessary.

[0010] In the simulation system according to the present embodiment, a manufacturer of semiconductor packages generates and provides simulation data for a simulation model that is necessary for a customer who purchases a semiconductor package to obtain a thermal analysis model, and the simulation data also takes into account the thermal conduction of the bonding members, allowing the customer to perform a simulation using a highly accurate thermal analysis model. The details are described below.

[0011] Fig. 1 is a block diagram for explaining the configuration of a simulation system 1 according to this embodiment. As shown in Fig. 1, the simulation system 1 according to this embodiment is configured to include a model data generating and providing system 2 and a simulation device 20. The model data generating and providing system 2 and the simulation device 20 are connected to each other via a network NW such as the Internet or a public wireless communication network.

[0012] The model data generating and providing system 2 is a system provided at a semiconductor package manufacturer, and is configured with a model data generating device 10 and a model data providing device 12. The model data generating device 10 generates simulation data for a simulation model to be input to a simulation device 20. The model data providing device 12 stores and holds the simulation data generated by the model data generating device 10 in a storage device, and provides it to a customer via a network NW.

[0013] The simulation device 20 is a device provided on the customer side who has purchased the semiconductor package. Although one simulation device 20 is illustrated in FIG. 1, the simulation system 1 may include a plurality of simulation devices 20. For example, one customer may have a plurality of simulation devices 20, or a plurality of customers may each have a simulation device 20. In other words, the simulation system 1 according to this embodiment is configured to include one or a plurality of simulation devices 20. Each of the simulation devices 20 is connected to the model data providing device 12 in the model data generating and providing system 2 via the network NW, and can obtain the simulation data provided by the model data providing device 12.

[0014] Moreover, the simulation device 20 does not need to be directly connected to the model data generating and providing system 2 via the network NW. For example, the simulation device 20 may be connected to the model data generating and providing system 2 via another computer connected to the network NW. Furthermore, the simulation device 20 does not necessarily need to be connected to the network NW. For example, a user on the customer side may acquire simulation data from the model data generating and providing system 2 via a computer connected to the network NW, store the acquired simulation data in a storage medium such as a USB (Universal Serial Bus) memory, and the simulation device 20 may acquire the simulation data via the storage medium. In other words, the simulation device 20 according to this embodiment is a device that can acquire simulation data from the model data generating and providing system 2, whether directly or indirectly.

[0015] The simulation device 20 executes a simulation based on the input simulation data and outputs a simulation result. In this embodiment, the simulation device 20 generates a thermal analysis model by an RC model in which at least a plurality of resistors R and a plurality of capacitors C are combined, and outputs a simulation result of this thermal analysis model. In other words, the simulation data acquired from the model data generating and providing system 2 becomes data for the simulation device 20 to generate this thermal analysis model. The simulation data that can be read by the simulation device 20 is also called a netlist, and defines the respective values ​​and connection relationships of the plurality of resistors R and the plurality of capacitors C.

[0016] 2 is a diagram showing an example of a semiconductor package product in which a semiconductor package 30 is mounted on a mounting board 32. FIG. 2 shows a cross-sectional view for explaining the structure of the semiconductor package 30 and the structure of the mounting board 32 on which the semiconductor package 30 is mounted. As shown in FIG. 2, the semiconductor package 30 is mounted on the mounting board 32 via a bonding member 34. Generally, this mounting is performed by the customer who purchases the semiconductor package 30. In other words, it is up to the customer to decide what kind of mounting board 32 to prepare and what kind of bonding member 34 to use.

[0017] For example, materials such as solder, silver paste, and bonding resin are used for the bonding member 34. The thermal conductivity of these materials varies, and even the same type of material has different thermal conductivity depending on its components. For this reason, the manufacturer of the semiconductor package 30 cannot determine a thermal analysis model of the state in which the semiconductor package 30 is mounted on the mounting board 32.

[0018] Fig. 3 is a diagram showing an example of a thermal analysis model used in the simulation in the simulation device 20. The thermal analysis model shown in Fig. 3 represents a thermal analysis model of the semiconductor package 30, the bonding member 34, and the mounting board 32 shown in Fig. 2.

[0019] The first part P1 represents a thermal analysis model of the semiconductor package 30, and shows that an RC model is configured by a combination of resistors R0 to R4 and capacitors C0 to C4. The second part P2 represents a thermal analysis model of the bonding member 34, and shows that an RC model is configured by a combination of resistors Rh1 to Rh2 and capacitors Ch1 to Ch2. The third part P3 represents a thermal analysis model of the mounting board 32, and shows that an RC model is configured by a combination of resistors Rh3 to Rh4 and capacitors C3 to C4.

[0020] That is, the thermal analysis model according to this embodiment includes a thermal analysis model of the bonding members 34. Therefore, the simulation device 20 can perform a simulation while taking into account the thermal conduction of the bonding members 34. In this embodiment, for example, at least one of the height of the bonding members 34, the area of ​​the bonding members 34, and the thermal conductivity of the bonding members 34 is provided as a factor representing the characteristics related to the thermal conduction of the bonding members 34. Furthermore, in this embodiment, in addition to these factors, a void fraction representing the ratio of voids contained in the bonding members 34 is provided.

[0021] Fig. 4 is a diagram showing an example of an X-ray image seen through the mounting substrate 32, the bonding member 34, and the semiconductor package 30 in the semiconductor package product shown in Fig. 2. As shown in Fig. 4, one or more voids V are often formed in the bonding member 34 between the mounting substrate 32 and the semiconductor package 30. Here, the voids V are a type of air bubble, and are inevitably generated when the semiconductor package 30 is mounted on the mounting substrate 32 using a material such as solder.

[0022] The thermal conductivity of the bonding member 34 in the portion where the voids V, which are air bubbles, are formed is lower than the thermal conductivity of the bonding member 34 in the portion where the voids are not formed. This makes it difficult for the heat generated by the semiconductor package 30 to be transmitted to the mounting board 32, which becomes a factor in inducing a temperature rise in the semiconductor package 30. In particular, the transient heat representing the heat conduction immediately after the semiconductor package 30 starts to generate heat is significantly affected by the voids V. For this reason, in the thermal analysis model of this embodiment, the occurrence rate of the voids V in the bonding member 34 is included as a void rate, as a factor in performing the simulation.

[0023] In this embodiment, the void ratio is an area ratio in a plan view. In other words, in Fig. 4, if the area of ​​the portion where the void V occurs occupies 30% of the bonding member 34, the void ratio is 30%. In other words, this means that the void V does not occur in the remaining 70% of the bonding member 34.

[0024] Therefore, in the simulation system 1 according to the present embodiment, the thermal analysis model also models the thermal conduction of the bonding member 34, and in the RC model forming the thermal analysis model of the bonding member 34, the values ​​of the resistance R and the capacitance C change depending on the height of the bonding member 34, the area of ​​the bonding member 34, the thermal conductivity of the bonding member 34, and the void fraction. However, it is not necessary to include all of these factors as factors of the thermal analysis model of the bonding member 34, and it is sufficient to include at least one of the height of the bonding member 34, the area of ​​the bonding member 34, the thermal conductivity of the bonding member 34, and the void fraction as a factor. On the other hand, factors related to the bonding member 34 other than these exemplified factors can also be included in the thermal analysis model. In other words, the factors of the thermal analysis model of the bonding member 34 described here are merely examples, and any factor related to the bonding member 34 can be incorporated into the thermal analysis model.

[0025] Fig. 5 is a graph showing the results of a simulation of transient heat when voids are considered and when voids are not considered. In Fig. 5, the horizontal axis represents time [seconds] in a log scale, and the vertical axis represents temperature [°C]. In Fig. 5, the simulation results when voids are considered are shown by dotted lines, and the simulation results when voids are not considered are shown by solid lines.

[0026] 5, it can be seen that the temperature of the semiconductor package 30 rises faster when the voids in the bonding members 34 are taken into account compared to when the voids are not taken into account. In other words, when the semiconductor chip of the semiconductor package 30 starts to operate and generates heat, the heat is less likely to escape to the mounting board 32 due to the influence of the voids. For this reason, immediately after the semiconductor package 30 starts to generate heat, the difference between the simulation results when the voids in the bonding members 34 are taken into account and the simulation results when they are not taken into account becomes large. However, as time passes, the difference between the two decreases, and at saturation, there is almost no temperature difference.

[0027] In this way, the simulation system 1 according to this embodiment can accurately simulate the transient heat state immediately after the semiconductor chip in the semiconductor package 30 starts to generate heat. In other words, a customer who purchases the semiconductor package 30 can obtain more accurate simulation results that take into account the thermal conduction of the bonding members 34 by using the simulation data provided by the model data providing device 12.

[0028] Fig. 6 is a diagram showing a flowchart explaining the contents of the simulation processing executed by the entire simulation system 1 according to this embodiment. As shown in Fig. 6, first, the simulation system 1 generates simulation data for a simulation model to be input to the simulation device 20 (step S10). In this embodiment, this processing is executed by the model data generating device 10, and the generated simulation data is held in the model data providing device 12.

[0029] Specifically, the manufacturer of the semiconductor package 30 prepares simulation data so that a customer who purchases the semiconductor package 30 can execute a simulation on the simulation device 20. The format and language of this simulation data are arbitrary, but the data must be executable by the customer's simulation device 20. For example, in this embodiment, it is assumed that the simulation device 20 is equipped with SPICE (Simulation Program with Integrated Circuit Emphasis) as a simulator, and the manufacturer prepares simulation data for this SPICE. In SPICE, the simulation data is also called a netlist.

[0030] Fig. 7 is a diagram showing an example of a data structure of simulation data according to this embodiment. As shown in Fig. 7, in this embodiment, the simulation data includes, as data elements, a header section D1, a bonding member variable definition section D2, bonding member model data D3, and semiconductor package model data D4. For convenience of explanation, in Fig. 7, each data element is shown as having one unit, but in actual simulation data, each data element may be distributed and mixed in a plurality of locations.

[0031] The header section D1 is an information section at the beginning of the simulation data that displays the contents of this simulation data. The contents of this header section D1 are not data that is read by the simulation device 20. The joining member variable definition section D2 is a data section that defines variables in a thermal analysis model of the joining member 34. The values ​​of the variables defined here are appropriately edited by the customer based on the characteristics of the joining member 34 regarding heat conduction. For this reason, the joining member variable definition section D2 holds the variables in the thermal analysis model of the joining member 34 in an editable manner.

[0032] The bonding member model data D3 is a data portion that defines a thermal analysis model of the bonding member 34. The values ​​of the variables defined in the bonding member variable definition part D2 are incorporated into this bonding member model data D3, and a simulation of the thermal analysis model of the bonding member 34 is executed by the simulation device 20. The semiconductor package model data D4 is a data portion that defines a thermal analysis model of the semiconductor package 30. This semiconductor package model data D4 is combined with the bonding member model data D3, and a simulation of the thermal analysis model is executed by the simulation device 20.

[0033] In the data structure of the simulation data shown in FIG. 7, the semiconductor package model data D4 constitutes a first data element for modeling the thermal conduction of the semiconductor package 30 in this embodiment, and the combination of the bonding member variable definition part D2 and the bonding member model data D3 constitutes a second data element for modeling the thermal conduction of the bonding member 34 in this embodiment.

[0034] Fig. 8 is a diagram showing an example of simulation data executed by the simulation device 20 according to this embodiment. That is, Fig. 8 shows an example of a netlist executed on SPICE in the simulation device 20. In this embodiment, this netlist is generated by the model data generating device 10 and held by the model data providing device 12. However, in the simulation data shown in Fig. 8, the header section D1 is omitted. This is because, as described above, the header section D1 is merely information to be displayed to the user and is not executed by the simulation device 20.

[0035] As shown in Fig. 8, the simulation data first includes a bonding member variable definition section D2. In this bonding member variable definition section D2, variables related to the void fraction of the bonding members 34, the height of the bonding members 34, the area of ​​the bonding members 34, and the thermal conductivity of the bonding members 34 are defined. In the example of Fig. 8, the void fraction solder_boid of the bonding members 34 is defined as 0.3, that is, 30%. The height solder_height of the bonding members 34 is defined as 1.0 mm, and the area solder_area of ​​the bonding members 34 is defined as 5.0 mm. 2 and the thermal conductivity solder_thermalcondactible of the joining member 34 is defined as 50 W / mK.

[0036] The values ​​of the variables defined in the connecting member variable definition section D2 are provisional values ​​prepared by the manufacturer. Therefore, the customer who performs the simulation needs to modify the values ​​of the variables defined in the connecting member variable definition section D2 based on the conditions of the connecting member 34 that he or she uses.

[0037] Next to the definition of the bonding member variable definition part D2, the simulation data includes a model part in which the bonding member model data D3 and the semiconductor package model data D4 are combined. That is, in the model part, data defining the thermal analysis model of the bonding member model data D3 and data defining the thermal analysis model of the semiconductor package model data D4 are mixed. In this model part, the values ​​and connection relationships of multiple resistors R and multiple capacitances C are also defined.

[0038] In this embodiment, the variables defined in the bonding member variable definition part D2 are used as variables in the bonding member model data D3 in the model part. Therefore, by the customer appropriately changing the values ​​of the variables in the bonding member variable definition part D2, a thermal analysis model of the bonding member 34 is formed based on the changed values, and a simulation can be performed on SPICE included in the simulation device 20.

[0039] 6, the simulation data generated by the model data generating device 10 is held in the model data providing device 12 and provided to a customer, that is, a user. The customer transfers the provided simulation data to the simulation device 20 and inputs it. In other words, the simulation data is taken into the simulation device 20 by a user operation and executed.

[0040] When simulation data is input to the simulation device 20, a thermal analysis model is generated based on the simulation data in conjunction with a simulation program included in the simulation device 20, and a simulation is performed using the generated thermal analysis model.

[0041] When the simulation is executed, as shown in FIG. 6, the customer inputs the conditions of the thermal analysis model of the bonding member 34 to the simulation device 20 (step S12). In this embodiment, the customer inputs the void fraction of the bonding member 34, the height of the bonding member 34, the area of ​​the bonding member 34, and the thermal conductivity of the bonding member 34 as the conditions of the thermal analysis model to the simulation device 20. Note that the conditions to be input as the thermal analysis model of the bonding member 34 are not limited to these, and factors of other conditions can be input as the conditions of the thermal analysis model of the bonding member 34. Also, it is not necessary to input all of these exemplified conditions as the conditions of the thermal analysis model of the bonding member 34, and some of the exemplified conditions may be input as the conditions of the thermal analysis model of the bonding member 34.

[0042] Furthermore, the conditions of the thermal analysis model of the bonding member 34 may be input to the simulation device 20 in any manner. For example, a customer who acquires simulation data from the model data providing device 12 transfers the simulation data to the simulation device 20, and after completing this transfer, the customer may directly edit the numerical values ​​to be substituted for the variables of the bonding member variable definition section D2 in the simulation data using an editor in the simulation device 20. That is, in the example of the simulation data in FIG. 8, the void fraction solder_boid of the bonding member 34, the height solder_height of the bonding member 34, the area solder_area of ​​the bonding member 34, and the thermal conductivity solder_thermalcondactible of the bonding member 34 are defined using variables in the bonding member variable definition section D2, but the numerical values ​​substituted for these variables may be directly edited and changed. The customer who mounts the semiconductor package 30 may specify what the numerical values ​​should be by performing experiments or simulations.

[0043] Alternatively, at least some of the conditions of the thermal analysis model of the bonding member 34 may be input by a customer by displaying an input screen for inputting these conditions on the simulation device 20. FIG. 9 is a diagram showing an example of a thermal analysis model condition input screen W10 displayed on the display of the simulation device 20 according to this embodiment. As shown in FIG. 9, the thermal analysis model condition input screen W10 displays a field F1 for inputting the void ratio of the bonding member 34, a field F2 for inputting the height of the bonding member 34, a field F3 for inputting the area of ​​the bonding member 34, and a field F4 for inputting the thermal conductivity of the bonding member 34. A user who is a customer inputs appropriate numerical values ​​into these fields F1 to F4. The simulation device 20 substitutes the input numerical values ​​for the corresponding variables in the simulation data to generate a thermal analysis model of the bonding member 34.

[0044] Furthermore, at least a part of the conditions of the thermal analysis model of the bonding members 34 may be calculated by the simulation device 20 from a perspective image of a semiconductor package product in which the semiconductor package 30 is mounted on the mounting board 32. Fig. 10 is a diagram showing an example of an X-ray image captured with X-rays as a perspective image of the semiconductor package product in which the semiconductor package 30 is mounted on the mounting board 32.

[0045] 10 is read into the simulation device 20, and image analysis is performed by the simulation device 20, whereby the simulation device 20 calculates numerical values ​​of the conditions of a thermal analysis model of the bonding members 34. The example of FIG. 10 shows an example of a perspective image obtained by X-ray imaging from the top or bottom of the semiconductor package 30 mounted on the mounting board 32, and the simulation device 20 can calculate the area solder_area and the void fraction solder_boid of the bonding members 34 by performing image analysis of this perspective image. The simulation device 20 substitutes these calculated numerical values ​​for the corresponding variables in the simulation data to generate a thermal analysis model of the bonding members 34.

[0046] FIG. 10 is a perspective image taken from the top or bottom of the semiconductor package product. However, for example, a perspective image taken from the side of the semiconductor package product can be input to the simulation device 20 and image analysis can be performed to calculate the height solder_height of the bonding member 34.

[0047] The conditions of the thermal analysis model of the bonding members 34 that could not be obtained by the image analysis of the fluoroscopic images may be input by the customer on the thermal analysis model condition input screen W10 shown in Fig. 9 as described above, or the customer may directly edit and input the numerical values ​​of the variables in the simulation data. Alternatively, the thermal analysis model may be generated using default numerical values ​​of the simulation data provided by the model data providing device 12.

[0048] Next, as shown in Fig. 6, the simulation device 20 generates a thermal analysis model based on the inputted conditions of the thermal analysis model, performs a simulation together with a simulation program included in the simulation device 20, and outputs the simulation results (step S14). The output mode of the simulation results is arbitrary, and for example, the simulation results may be displayed on a display included in the simulation device 20, or may be printed by a printer included in the simulation device 20. Furthermore, the obtained simulation results may be output as data in a predetermined format. From the simulation results, for example, the state of transient heat after the semiconductor chip in the semiconductor package 30 starts to operate as shown in Fig. 5 can be known.

[0049] As described above, according to the simulation system 1 of this embodiment, the simulation data includes the semiconductor package model data D4 for modeling the thermal conduction of the semiconductor package 30, and the joining member variable definition part D2 and the joining member model data D3 for modeling the thermal conduction of the joining member 34. Therefore, when this simulation data is input into the simulation device 20, it is possible to obtain simulation results that also take into account the thermal conduction of the joining member 34.

[0050] In addition, since the conditions of the thermal analysis model for the bonding members 34 are defined as variables in the bonding member variable definition section D2, the customer can freely change the values ​​of the variables defined in the bonding member variable definition section D2 to derive more appropriate simulation results. That is, the manufacturer of the semiconductor package 30 cannot specify the thermal conductivity, void ratio, and the like of the bonding members 34 used by the customer who purchased the semiconductor package 30, but the simulation system 1 according to this embodiment allows the customer to specify these conditions and obtain simulation results that take into account the characteristics of the bonding members 34.

[0051] Although several embodiments have been described above, these embodiments are presented only as examples and are not intended to limit the scope of the invention. The novel device and method described in this specification can be implemented in various other forms. In addition, various omissions, substitutions, and modifications can be made to the forms of the device and method described in this specification without departing from the spirit of the invention. The appended claims and their equivalents are intended to include such forms and modifications that fall within the scope and spirit of the invention. [Explanation of symbols]

[0052] 1 Simulation system 2. Model data generation and provision system 10. Model data generator 12 Model data providing device 20 Simulation Device 30 Semiconductor Package 32 Mounting board 34 Joining materials D1 Header section D2 Variable joint member definition section D3 Joint component model data D4 Semiconductor package model data W10 Thermal analysis model condition input screen

Claims

1. A model data providing device that provides simulation data to be input to a simulation device to generate a simulation model, The simulation data is first data elements for modeling thermal conduction of the semiconductor package; A second data element for modeling thermal conduction of a bonding member when the semiconductor package is mounted on a mounting board, the second data element having a void ratio representing a ratio of voids contained in the bonding member; The structure includes: a model data providing device which, when the simulation data is input into the simulation device, is integrated with a simulation program provided in the simulation device, generates a thermal analysis model based on the first data elements and the second data elements, and outputs simulation results using this thermal analysis model.

2. A model data providing method for providing simulation data, which is input to a simulation device to generate a simulation model, by a model data providing device, comprising: first data elements for modeling thermal conduction of the semiconductor package; A second data element for modeling thermal conduction of a bonding member when the semiconductor package is mounted on a mounting board, the second data element having a void ratio representing a ratio of voids contained in the bonding member; A model data providing device provides simulation data of a structure including the above structure, a simulation device that generates a thermal analysis model based on the first data elements and the second data elements, the simulation data being integrated with a simulation program provided in the simulation device when the simulation data is input into the simulation device, the simulation device generating a thermal analysis model based on the first data elements and the second data elements.

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