Detection System

Abstract

To provide a detection system capable of suppressing variation in detection value of elements in the same device or between different devices.SOLUTION: A detection system 1 comprises: a sensor part 10 that has a plurality of light sensors provided in a detection region; a control part 20 that controls the sensor part 10; and a data storage part 300 that stores correction value data including correction values to detection values of the plurality of light sensors, and identification codes of a plurality of respective sensor parts in one-to-one association. The control part 20 acquires from the data storage part 300 the correction value data corresponding to the identification code of the sensor part 10 and corrects the detection values of the light sensors on the basis of the acquired correction value data.SELECTED DRAWING: Figure 14

Description

[Technical field]

[0001] The present invention relates to a detection system. [Background technology]

[0002] Patent Document 1 describes an optical sensor in which a plurality of photoelectric conversion elements such as photodiodes are arranged on a semiconductor substrate. The optical sensor can detect biometric information by changing the signal output from the photoelectric conversion element according to the amount of light irradiated. The optical sensor of Patent Document 1 can detect unevenness on the surface of a finger at a fine pitch and is used as a fingerprint sensor. Patent Document 2 describes a display device equipped with a plurality of sensors that detect infrared rays. The display device of Patent Document 2 can detect the position of a finger, a fingerprint pattern, and a vein pattern based on reflected infrared light. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] US Patent Application Publication No. 2018 / 0012069 [Patent Document 2] JP 2009-32005 A Summary of the Invention [Problem to be solved by the invention]

[0004] Photoelectric conversion elements such as photodiodes have different characteristics, which causes variations in output. Variations in the characteristics of multiple photoelectric conversion elements installed on the same device can cause a decrease in detection accuracy. In addition, variations in the characteristics of photoelectric conversion elements between different devices can cause variations in detection results between each device.

[0005] An object of the present invention is to provide a detection system capable of suppressing variations in detection values ​​of elements within the same device or between different devices. [Means for solving the problem]

[0006] A detection system according to one embodiment of the present invention comprises a sensor unit having a plurality of optical sensors provided in a detection area, a control unit that controls the sensor unit, and a data storage unit in which correction value data including correction values ​​for detection values ​​of the plurality of optical sensors is stored in a one-to-one association with an identification code of each of the plurality of sensor units, wherein the control unit acquires correction value data corresponding to the identification code of the sensor unit from the data storage unit, and corrects the detection value of the optical sensor based on the acquired correction value data. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a plan view showing an example of a basic configuration of a detection device used in a detection system according to an embodiment. [Diagram 2] FIG. 2 is a block diagram showing a circuit configuration of the detection device. [Diagram 3] FIG. 3 is a circuit diagram showing the detection device. [Figure 4] FIG. 4 is a circuit diagram showing a plurality of partial detection areas. [Figure 5A] FIG. 5A is a cross-sectional view showing a schematic cross-sectional configuration of a sensor unit. [Figure 5B] FIG. 5B is a cross-sectional view showing a schematic cross-sectional configuration of a sensor unit of a detection device according to a first modified example. [Figure 6] FIG. 6 is a timing waveform diagram showing an example of the operation of the detection device. [Figure 7] FIG. 7 is a timing waveform diagram illustrating an example of operation during the reset period in FIG. [Figure 8] FIG. 8 is a timing waveform diagram showing an example of operation during the readout period in FIG. [Figure 9] FIG. 9 is a timing waveform diagram showing an example of operation during a driving period of one gate line included in the readout period in FIG. [Figure 10] FIG. 10 is an explanatory diagram for explaining the relationship between the driving of the sensor unit of the detection device and the lighting operation of the light source. [Figure 11]FIG. 11 is a diagram showing the relationship between the output value of the detection unit and the intensity of the light irradiated to the optical sensor. [Figure 12] FIG. 12 is a schematic diagram showing correlation before and after application of a correction value in a detection process. [Figure 13] FIG. 13 is a diagram illustrating an example of the correction value data. [Figure 14] FIG. 14 is a diagram showing the configuration of a detection system according to an embodiment. [Figure 15] FIG. 15 is a diagram showing correction value data corresponding to a plurality of sensor units stored in the data storage unit. [Figure 16] FIG. 16 is a flowchart showing an example of the correction value data acquisition process. [Figure 17] FIG. 17 is a diagram showing an example of an identification code according to the first embodiment. [Figure 18] FIG. 18 is a diagram illustrating an example of a circuit configuration of the individual identification unit. [Figure 19] FIG. 19 is a diagram showing a schematic cross-sectional structure of the code detection region. [Figure 20] FIG. 20 is a diagram showing an aspect of an individual identification unit according to a modified example of the first embodiment. [Figure 21] FIG. 21 is a diagram showing an example of an identification code according to the second embodiment. [Figure 22] FIG. 22 is a diagram showing an example of an aspect of the individual identification unit according to the second embodiment. [Diagram 23] FIG. 23 is a flowchart illustrating an example of an identification code reading process according to the second embodiment. [Figure 24] FIG. 24 is a diagram showing an example of an identification code according to the third embodiment. [Diagram 25] FIG. 25 is a diagram illustrating a specific example of a configuration in which an individual identification unit according to the third embodiment is provided. In FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] The form (embodiment) for carrying out the present invention will be described in detail with reference to the drawings. Note that the present invention is not limited by the contents described in the following embodiment. In addition, the components described below include those that a person skilled in the art can easily imagine and those that are substantially the same. Furthermore, the components described below can be appropriately combined. In addition, the disclosure is merely an example, and those that a person skilled in the art can easily imagine appropriate modifications while maintaining the gist of the invention are naturally included in the scope of the present invention. In addition, in order to make the explanation clearer, the drawings may be schematic in terms of the width, thickness, shape, etc. of each part compared to the actual embodiment, but they are merely examples and do not limit the interpretation of the present invention. In addition, in this specification and each figure, elements similar to those described above with respect to the previous figures may be given the same reference numerals, and detailed explanations may be omitted as appropriate.

[0009] 1 is a plan view showing an example of a basic configuration of a detection device used in a detection system according to an embodiment. As shown in FIG. 1, the detection device 100 includes a sensor unit 10 and a control unit 20.

[0010] The sensor unit 10 has a sensor board 21, a first light source substrate 51 and a second light source substrate 52. The control unit 20 has a control board 121, a detection circuit 48, a control circuit 122, a power supply circuit 123, and an interface circuit 126.

[0011] The sensor substrate 21 has a detection area AA and a peripheral area GA. The detection area AA is an area in which a plurality of optical sensors PD (see FIG. 4) are provided. The peripheral area GA is an area between the outer periphery of the detection area AA and the end of the sensor substrate 21, and is an area in which the gate line driving circuit 15 and the signal line selection circuit 16 are provided.

[0012] In FIG. 1, an example is shown in which a plurality of first light sources 61 are provided on the first light source substrate 51 and a plurality of second light sources 62 are provided on the second light source substrate 52, but the arrangement of the first light source 61 and the second light source 62 shown in FIG. 1 is merely an example and can be changed as appropriate. For example, a plurality of first light sources 61 and a plurality of second light sources 62 may be arranged on each of the first light source substrate 51 and the second light source substrate 52. In this case, a group including a plurality of first light sources 61 and a group including a plurality of second light sources 62 may be arranged side by side in the second direction Dy, or the first light source 61 and the second light source 62 may be arranged alternately in the second direction Dy. In addition, the number of light source substrates on which the first light source 61 and the second light source 62 are provided may be one or three or more. Furthermore, the first light source 61 and the second light source 62 may be the same type of light source. Alternatively, the plurality of first light sources 61 and the plurality of second light sources 62 may be so-called direct type light sources provided directly below the detection area AA.

[0013] A control board 121 is electrically connected to the sensor board 21 via a flexible printed circuit (FPC) 71 (hereinafter also referred to as "FPC 71"). The control board 121 is provided with a detection circuit 48, a control circuit 122, a power supply circuit 123, and an interface circuit 126.

[0014] The control circuit 122 includes, for example, a control integrated circuit (IC) that outputs a logic control signal. The control circuit 122 may include, for example, a programmable logic device (PLD) such as a field programmable gate array (FPGA).

[0015] The control circuit 122 supplies control signals to the sensor unit 10, the gate line driving circuit 15, and the signal line selection circuit 16 to control the detection operation of the sensor unit 10. The control circuit 122 also supplies control signals to the first light source 61 and the second light source 62 to control whether the first light source 61 and the second light source 62 are turned on or off.

[0016] The power supply circuit 123 supplies voltage signals such as a sensor power supply potential VDDSNS (see FIG. 4) to the sensor unit 10, the gate line driving circuit 15, and the signal line selection circuit 16. The power supply circuit 123 also supplies a power supply voltage to the first light source 61 and the second light source 62.

[0017] The interface circuit 126 is, for example, a USB controller IC, and controls communication between the control circuit 122 and an external higher-level control device (described later).

[0018] The gate line driving circuit 15 and the signal line selection circuit 16 are provided in the peripheral area GA of the sensor substrate 21. Specifically, the gate line driving circuit 15 is provided in a region of the peripheral area GA extending along the second direction Dy. The signal line selection circuit 16 is provided in a region of the peripheral area GA extending along the first direction Dx.

[0019] The first direction Dx is a direction in a plane parallel to the sensor substrate 21. The second direction Dy is a direction in a plane parallel to the sensor substrate 21, and is a direction perpendicular to the first direction Dx. The second direction Dy may intersect with the first direction Dx without being perpendicular thereto. The third direction Dz is a direction perpendicular to the first direction Dx and the second direction Dy, and is a normal direction of the sensor substrate 21.

[0020] The multiple first light sources 61 are provided on the first light source substrate 51 and arranged along the second direction Dy. The multiple second light sources 62 are provided on the second light source substrate 52 and arranged along the second direction Dy. The first light source substrate 51 and the second light source substrate 52 are electrically connected to the control circuit 122 and the power supply circuit 123 via terminal portions 124 and 125 provided on the control board 121, respectively.

[0021] The first light sources 61 and the second light sources 62 may be, for example, inorganic light emitting diodes (LEDs) or organic light emitting diodes (OLEDs). The first light sources 61 and the second light sources 62 emit first light and second light of different wavelengths, respectively. Alternatively, the first light sources 61 and the second light sources 62 may emit light of the same wavelength.

[0022] The first light emitted from the first light source 61 is mainly reflected by the surface of the object to be detected, such as a finger Fg, and enters the optical sensor PD in the detection area AA. As a result, the sensor unit 10 can detect a fingerprint by detecting the shape of the unevenness of the surface of the finger Fg. The second light emitted from the second light source 62 is reflected by the inside of the object to be detected, such as a finger Fg or a wrist, or passes through the finger Fg or a wrist, and enters the optical sensor PD in the detection area AA. As a result, the sensor unit 10 can detect information about a living body inside the finger Fg or a wrist. The information about a living body is, for example, a pulse wave, a pulse, a blood vessel image, etc. of the finger Fg, the wrist, or the palm. That is, the detection device 100 is configured as a detection device that detects information about a living body, including a fingerprint, a pulse wave, a pulse, and a blood vessel pattern such as veins.

[0023] The first light may have a wavelength of 520 nm or more and 600 nm or less, for example, about 500 nm, and the second light may have a wavelength of 780 nm or more and 950 nm or less, for example, about 850 nm. In this case, the first light is blue or green visible light (blue light or green light), and the second light is infrared light. The sensor unit 10 can detect a fingerprint based on the first light emitted from the first light source 61. The second light emitted from the second light source 62 is reflected inside the detection object such as the finger Fg or transmitted / absorbed by the finger Fg, and enters the optical sensor PD in the detection area AA. As a result, the sensor unit 10 can detect a pulse wave or a blood vessel image (blood vessel pattern) such as veins as information about the living body inside the finger Fg.

[0024] Alternatively, the first light may have a wavelength of 600 nm or more and 700 nm or less, for example, about 660 nm, and the second light may have a wavelength of 780 nm or more and 950 nm or less, for example, about 850 nm. In this case, the first light is red visible light (red light), and the second light is infrared light. The sensor unit 10 can detect information about the living body, such as a pulse wave, a pulse, and a blood vessel image, as well as a blood oxygen concentration, based on the first light emitted from the first light source 61 and the second light emitted from the second light source 62. In this way, the detection device 100 has the first light source 61 and a plurality of second light sources 62, and can detect various information about the living body by performing detection based on the first light and detection based on the second light.

[0025] 2 is a block diagram showing a circuit configuration of the detection device 100. As shown in FIG. 2, the detection device 100 includes a detection control unit 11 and a detection unit .

[0026] The sensor unit 10 has a plurality of optical sensors PD in a detection area AA. The optical sensors PD are photodiodes, and output an electric signal corresponding to irradiated light as a detection signal Vdet to the signal line selection circuit 16. The sensor unit 10 also performs detection according to a gate drive signal Vgcl supplied from a gate line drive circuit 15.

[0027] The detection control unit 11 is a circuit that supplies control signals to the gate line driving circuit 15, the signal line selection circuit 16, and the detection unit 40, respectively, and controls their operations. The detection control unit 11 supplies various control signals, such as a start signal STV, a clock signal CK, and a reset signal RST1, to the gate line driving circuit 15. The detection control unit 11 also supplies various control signals, such as a selection signal ASW, to the signal line selection circuit 16. The detection control unit 11 also supplies various control signals to the first light source 61 and the second light source 62, and controls the lighting and non-lighting of each. In the present disclosure, the detection control unit 11 is included in, for example, the control circuit 122.

[0028] The gate line driving circuit 15 is a circuit that drives a plurality of gate lines GCL (see FIG. 3) based on various control signals. The gate line driving circuit 15 sequentially or simultaneously selects the plurality of gate lines GCL, and supplies a gate driving signal Vgcl to the selected gate lines GCL. In this way, the gate line driving circuit 15 selects a plurality of photosensors PD connected to the gate lines GCL.

[0029] The signal line selection circuit 16 is a switch circuit that sequentially or simultaneously selects a plurality of signal lines SGL (see FIG. 3). The signal line selection circuit 16 is, for example, a multiplexer. The signal line selection circuit 16 electrically connects the selected signal line SGL to the detection circuit 48 based on a selection signal ASW supplied from the detection control unit 11. As a result, the signal line selection circuit 16 outputs a detection signal Vdet of the optical sensor PD to the detection unit 40.

[0030] The detection unit 40 includes a detection circuit 48, a signal processing unit 44, a storage unit 46, and a detection timing control unit 47. The detection timing control unit 47 controls the detection circuit 48 and the signal processing unit 44 based on a control signal supplied from the detection control unit 11 so that they operate in synchronization with each other.

[0031] The detection circuit 48 is, for example, an analog front-end circuit (AFE). The detection circuit 48 is a signal processing circuit having at least the functions of a detection signal amplifier 42 and an A / D converter 43. The detection signal amplifier 42 amplifies the detection signal Vdet. The A / D converter 43 converts the analog signal output from the detection signal amplifier 42 into a digital signal.

[0032] The signal processing unit 44 is a logic circuit that processes the signal detected by the sensor unit 10 based on the output signal of the detection circuit 48. The signal processing unit 44 is included in the control circuit 122, for example.

[0033] The storage unit 46 temporarily stores the signal processed by the signal processing unit 44. In the present disclosure, the storage unit 46 stores, for example, correction value data acquired from a data storage unit provided in a network server described later. The storage unit 46 may be, for example, a RAM (Random Access Memory), a register circuit, or the like. The storage unit 46 is included in, for example, the control circuit 122.

[0034] Next, an example of the circuit configuration of the detection device 100 will be described. Fig. 3 is a circuit diagram showing the detection device. As shown in Fig. 3, the sensor unit 10 has a plurality of partial detection areas PAA arranged in a matrix. Each of the partial detection areas PAA is provided with an optical sensor PD.

[0035] The gate lines GCL extend in a first direction Dx and are connected to a plurality of partial detection areas PAA arranged in the first direction Dx. The plurality of gate lines GCL(1), GCL(2), ..., GCL(8) are arranged in a second direction Dy and are each connected to a gate line driving circuit 15. In the following description, when there is no need to distinguish between the plurality of gate lines GCL(1), GCL(2), ..., GCL(8), they are simply referred to as gate lines GCL. In addition, in FIG. 3, eight gate lines GCL are shown for ease of explanation, but this is merely an example, and M gate lines GCL (M is 8 or more, for example, M=256) may be arranged.

[0036] The signal line SGL extends in the second direction Dy and is connected to the photosensors PD of the partial detection areas PAA arranged in the second direction Dy. The signal lines SGL(1), SGL(2), ..., SGL(12) are arranged in the first direction Dx and are each connected to the signal line selection circuit 16 and the reset circuit 17. In the following description, when there is no need to distinguish between the signal lines SGL(1), SGL(2), ..., SGL(12), they will simply be referred to as signal lines SGL.

[0037] For ease of understanding, 12 signal lines SGL are shown, but this is merely an example, and N signal lines SGL (N is 12 or more, for example, N=252) may be arranged.

[0038] The gate line driving circuit 15 receives various control signals, such as a start signal STV, a clock signal CK, and a reset signal RST1, from the control circuit 122 (see FIG. 1). The gate line driving circuit 15 sequentially selects the multiple gate lines GCL(1), GCL(2), ..., GCL(8) in a time-division manner based on the various control signals. The gate line driving circuit 15 supplies a gate driving signal Vgcl to the selected gate line GCL. As a result, the gate driving signal Vgcl is supplied to the multiple switching elements Tr connected to the gate line GCL, and the multiple partial detection areas PAA arranged in the first direction Dx are selected as detection targets.

[0039] The gate line driving circuit 15 may perform different driving for each detection mode of the fingerprint detection and a plurality of different pieces of information related to a living body (pulse wave, pulse, blood vessel image such as veins, blood oxygen concentration, etc., hereinafter also simply referred to as "biometric information"). For example, the gate line driving circuit 15 may drive a plurality of gate lines GCL in a bundle.

[0040] Specifically, the gate line driving circuit 15 simultaneously selects a predetermined number of gate lines GCL from the gate lines GCL(1), GCL(2), ..., GCL(8) based on the control signal. For example, the gate line driving circuit 15 simultaneously selects six gate lines GCL(1) to GCL(6) and supplies the gate driving signal Vgcl. The gate line driving circuit 15 supplies the gate driving signal Vgcl to a plurality of switching elements Tr via the six selected gate lines GCL. As a result, block units PAG1 and PAG2 including a plurality of partial detection areas PAA arranged in the first direction Dx and the second direction Dy are selected as detection targets. The gate line driving circuit 15 drives a predetermined number of gate lines GCL in a bundle and sequentially supplies the gate driving signal Vgcl to each of the predetermined number of gate lines GCL.

[0041] The signal line selection circuit 16 has a plurality of selection signal lines Lsel, a plurality of output signal lines Lout, and a third switching element TrS. The plurality of third switching elements TrS are provided corresponding to the plurality of signal lines SGL, respectively. The six signal lines SGL(1), SGL(2), ..., SGL(6) are connected to a common output signal line Lout1. The six signal lines SGL(7), SGL(8), ..., SGL(12) are connected to a common output signal line Lout2. The output signal lines Lout1, Lout2 are each connected to a detection circuit 48.

[0042] Here, the signal lines SGL(1), SGL(2), ..., SGL(6) are defined as a first signal line block, and the signal lines SGL(7), SGL(8), ..., SGL(12) are defined as a second signal line block. The multiple selection signal lines Lsel are each connected to the gate of the third switching element TrS included in one signal line block. Furthermore, one selection signal line Lsel is connected to the gate of the third switching element TrS of multiple signal line blocks.

[0043] Specifically, the selection signal lines Lsel1, Lsel2, ..., Lsel6 are connected to the third switching elements TrS corresponding to the signal lines SGL(1), SGL(2), ..., SGL(6), respectively. The selection signal line Lsel1 is connected to the third switching element TrS corresponding to the signal line SGL(1) and the third switching element TrS corresponding to the signal line SGL(7). The selection signal line Lsel2 is connected to the third switching element TrS corresponding to the signal line SGL(2) and the third switching element TrS corresponding to the signal line SGL(8).

[0044] The control circuit 122 (see FIG. 1) sequentially supplies the selection signal ASW to the selection signal line Lsel. As a result, the signal line selection circuit 16 sequentially selects the signal lines SGL in one signal line block in a time-division manner by the operation of the third switching element TrS. The signal line selection circuit 16 also selects one signal line SGL from each of the multiple signal line blocks. With this configuration, the detection device 100 can reduce the number of ICs (Integrated Circuits) including the detection circuit 48 or the number of IC terminals.

[0045] The signal line selection circuit 16 may bundle a plurality of signal lines SGL and connect them to the detection circuit 48. Specifically, the control circuit 122 (see FIG. 1) simultaneously supplies the selection signal ASW to the selection signal lines Lsel. The signal line selection circuit 16 selects a plurality of signal lines SGL (e.g., six signal lines SGL) in one signal line block by the operation of the third switching element TrS, and connects the plurality of signal lines SGL to the detection circuit 48. As a result, signals detected in the block units PAG1 and PAG2 are output to the detection circuit 48. In this case, signals from a plurality of partial detection areas PAA (photosensors PD) included in the block units PAG1 and PAG2 are integrated and output to the detection circuit 48.

[0046] By performing detection for each block unit PAG1, PAG2 through the operation of the gate line driving circuit 15 and the signal line selection circuit 16, the strength of the detection signal Vdet obtained in one detection is improved, thereby improving the sensor sensitivity.

[0047] As shown in Fig. 3, the reset circuit 17 has a reference signal line Lvr, a reset signal line Lrst, and a fourth switching element TrR. The fourth switching element TrR is provided corresponding to the multiple signal lines SGL. The reference signal line Lvr is connected to one of the sources or drains of the multiple fourth switching elements TrR. The reset signal line Lrst is connected to the gates of the multiple fourth switching elements TrR.

[0048] The control circuit 122 supplies a reset signal RST2 to the reset signal line Lrst. This turns on the multiple fourth switching elements TrR, and the multiple signal lines SGL are electrically connected to the reference signal line Lvr. The power supply circuit 123 supplies a reference signal COM to the reference signal line Lvr. This causes the reference signal COM to be supplied to the capacitive elements Ca (see FIG. 4) included in the multiple partial detection areas PAA.

[0049] FIG. 4 is a circuit diagram showing a plurality of partial detection regions of the detection device according to the embodiment. Note that FIG. 4 also shows the circuit configuration of a detection circuit 48. As shown in FIG. 4, the partial detection region PAA includes a light sensor PD, a capacitance element Ca, and a switching element Tr. The capacitance element Ca is a capacitance (sensor capacitance) formed in the light sensor PD, and is equivalently connected in parallel with the light sensor PD. Furthermore, the signal line capacitance Cc is a parasitic capacitance formed in the signal line SGL, and is equivalently formed between the signal line SGL and the anode of the light sensor PD and one end side of the capacitance element Ca.

[0050] 4 shows two gate lines GCL(m) and GCL(m+1) arranged in the second direction Dy among the multiple gate lines GCL. Also, two signal lines SGL(n) and SGL(n+1) arranged in the first direction Dx among the multiple signal lines SGL. The partial detection area PAA is an area surrounded by the gate lines GCL and the signal lines SGL.

[0051] The switching element Tr is provided corresponding to the optical sensor PD. The switching element Tr is configured with a thin film transistor, and in this example, is configured with an n-channel MOS (Metal Oxide Semiconductor) type TFT (Thin Film Transistor).

[0052] The gates of the switching elements Tr belonging to the partial detection areas PAA aligned in the first direction Dx are connected to the gate line GCL. The sources of the switching elements Tr belonging to the partial detection areas PAA aligned in the second direction Dy are connected to the signal line SGL. The drains of the switching elements Tr are connected to the cathodes of the photosensors PD and the capacitive elements Ca.

[0053] A sensor power supply signal VDDSNS is supplied to the anode of the photosensor PD from the power supply circuit 123. In addition, a reference signal COM, which becomes the initial potential of the signal line SGL and the capacitive element Ca, is supplied from the power supply circuit 123 to the signal line SGL and the capacitive element Ca.

[0054] In a reset period Prst (see FIG. 6) described later, a reset signal RST2 is supplied to the reset signal line Lrst, and a reference signal COM is supplied to the signal line SGL. The gate line driving circuit 15 sequentially supplies the gate driving signal Vgcl to the gate lines GCL to charge each capacitance element Ca to a reset potential (reference signal COM potential, for example, 0.75 V). The control circuit 122 (see FIG. 1) sequentially supplies the selection signal ASW to the selection signal line Lsel to charge the signal line SGL to the reset potential (reference signal COM potential, for example, 0.75 V) in the same manner as each capacitance element Ca.

[0055] During the exposure period Pex (see FIG. 6), when light is irradiated onto the partial detection area PAA, a current corresponding to the amount of light flows through the photosensor PD, which reduces the amount of charge in the capacitance element Ca and causes the potential of the capacitance element Ca to drop from the reset potential (e.g., 0.75 V). After that, during the readout period Pdet (see FIG. 6), when the switching element Tr and the third switching element TrS of the signal line selection circuit 16 are turned on, each capacitance element Ca is connected to the detection circuit 48. This allows the detection device 100 to detect a signal corresponding to the amount of light irradiated onto the photosensor PD for each partial detection area PAA or for each block unit PAG1, PAG2.

[0056] In the readout period Pdet (see FIG. 6), the switch SSW of the detection circuit 48 is turned on and connected to the signal line SGL. The detection signal amplifier 42 of the detection circuit 48 converts the change in the charge amount of the capacitance element Ca into a voltage fluctuation and amplifies it. A reference potential (Vref) having a fixed potential is input to the non-inverting input terminal (+) of the detection signal amplifier 42, and the signal line SGL is connected to the inverting input terminal (-). In the embodiment, a signal that is the same as the reference signal COM is input as the reference potential (Vref) voltage. The detection signal amplifier 42 also has a capacitance element Cb and a reset switch RSW. In the reset period Prst (see FIG. 6), the reset switch RSW is turned on and the charge of the capacitance element Cb is reset.

[0057] Next, the configuration of the photosensor PD will be described. Fig. 5A is a cross-sectional view showing a schematic cross-sectional configuration of the sensor unit. As shown in Fig. 5A, the sensor unit 10 includes a sensor substrate 21, a TFT layer 22, an insulating layer 23, a photosensor PD, and insulating layers 24a, 24b, 24c, and 25.

[0058] The sensor substrate 21 is an insulating base material, and for example, glass or a resin material is used. The sensor substrate 21 is not limited to a flat plate shape, and may have a curved surface. In this case, the sensor substrate 21 may be a film-like resin.

[0059] The sensor substrate 21 has a first surface and a second surface opposite to the first surface. A TFT layer 22, an insulating layer 23, a photosensor PD, and insulating layers 24 and 25 are laminated in this order on the first surface.

[0060] The TFT layer 22 is provided with circuits such as the gate line driving circuit 15 and the signal line selection circuit 16 described above. The TFT layer 22 is also provided with TFTs (Thin Film Transistors) such as switching elements Tr, and various wirings such as gate lines GCL and signal lines SGL. The sensor substrate 21 and the TFT layer 22 are a driving circuit substrate that drives a sensor for each predetermined detection area, and are also called a backplane or array substrate.

[0061] The insulating layer 23 is an organic insulating layer, and is provided on the TFT layer 22. The insulating layer 23 is a planarizing layer that planarizes unevenness formed by the switching elements Tr formed in the TFT layer 22 and various conductive layers.

[0062] The photosensor PD is provided on the insulating layer 23. The photosensor PD has a lower electrode 35, a semiconductor layer 31, and an upper electrode 34, which are laminated in this order.

[0063] The lower electrode 35 is provided on the insulating layer 23 and is electrically connected through a contact hole H1 to the switching element Tr of the TFT layer 22. The lower electrode 35 is a cathode of the photosensor PD and an electrode for reading out the detection signal Vdet, and a plurality of lower electrodes 35 are provided for each photosensor PD.

[0064] The semiconductor layer 31 is amorphous silicon (a-Si). The semiconductor layer 31 includes an i-type semiconductor layer 32a, a p-type semiconductor layer 32b, and an n-type semiconductor layer 32c. The i-type semiconductor layer 32a, the p-type semiconductor layer 32b, and the n-type semiconductor layer 32c are a specific example of a photoelectric conversion element. In FIG. 5A, the n-type semiconductor layer 32c, the i-type semiconductor layer 32a, and the p-type semiconductor layer 32b are stacked in this order in the direction perpendicular to the surface of the sensor substrate 21. However, the opposite configuration, that is, the p-type semiconductor layer 32b, the i-type semiconductor layer 32a, and the n-type semiconductor layer 32c may be used. The semiconductor layer 31 may also be a photoelectric conversion element made of an organic semiconductor.

[0065] The n-type semiconductor layer 32c is an n+ region formed by doping impurities into a-Si. The p-type semiconductor layer 32b is a p+ region formed by doping impurities into a-Si. The i-type semiconductor layer 32a is, for example, a non-doped intrinsic semiconductor and has lower conductivity than the p-type semiconductor layer 32b and the n-type semiconductor layer 32c.

[0066] The upper electrode 34 is an anode of the photosensor PD and is an electrode for supplying a power supply signal VDDSNS to the photoelectric conversion layer. The upper electrode 34 is provided in common to the multiple photosensors PD.

[0067] The upper electrode 34 is made of a conductive material having light-transmitting properties, such as indium zinc oxide (IZO). The lower electrode 35 is made of a conductive material having light-transmitting properties, such as indium tin oxide (ITO).

[0068] The lower electrode 35 and the upper electrode 34 may be made of a metal material such as silver (Ag) or an alloy material containing at least one of a plurality of metal materials. In this case, the electrode can be formed as a semi-transparent electrode having translucency by controlling the film thickness of the electrode. For example, by forming the electrode from a 10 nm-thick Ag thin film, the electrode has a translucency of about 60%. This allows the optical sensor PD to detect both the light irradiated from the first surface S1 side of the sensor substrate 21 and the light irradiated from the second surface S2 side.

[0069] An insulating layer 24a and an insulating layer 24b are provided on the insulating layer 23. The insulating layer 24a covers the periphery of the upper electrode 34, and an opening is provided at a position where the insulating layer 24a overlaps with the upper electrode 34. The connection wiring 36 is connected to the upper electrode 34 at a portion of the upper electrode 34 where the insulating layer 24a is not provided. The insulating layer 24b is provided on the insulating layer 24a, covering the upper electrode 34 and the connection wiring 36. An insulating layer 24c, which is a planarizing layer, is provided on the insulating layer 24b. An insulating layer 25 is provided on the insulating layer 24c. However, the insulating layer 25 may be omitted.

[0070] 5B is a cross-sectional view showing a schematic cross-sectional configuration of a sensor unit of a detection device according to a first modification. As shown in FIG. 5B, in a detection device 100A of the first modification, an optical sensor PDA is provided on an insulating layer 23a. The insulating layer 23a is an inorganic insulating layer provided to cover the insulating layer 23, and is formed of, for example, silicon nitride (SiN). The optical sensor PDA has a photoelectric conversion layer 31A, a lower electrode 35 (cathode electrode), and an upper electrode 34 (anode electrode). In a direction perpendicular to the first surface S1 of the sensor substrate 21, the lower electrode 35, the photoelectric conversion layer 31A, and the upper electrode 34 are laminated in this order.

[0071] The photoelectric conversion layer 31A changes its characteristics (for example, voltage-current characteristics and resistance value) according to the light irradiated thereto. An organic material is used as the material of the photoelectric conversion layer 31A. Specifically, for example, low molecular weight organic materials such as C60 (fullerene), PCBM (phenyl C61-butyric acid methyl ester), CuPc (copper phthalocyanine), F16CuPc (fluorinated copper phthalocyanine), rubrene (5,6,11,12-tetraphenyltetracene), and PDI (a derivative of perylene) can be used as the photoelectric conversion layer 31A.

[0072] The photoelectric conversion layer 31A can be formed by a deposition type (dry process) using these low molecular weight organic materials. In this case, the photoelectric conversion layer 31A may be, for example, a laminated film of CuPc and F16CuPc, or a laminated film of rubrene and C60. The photoelectric conversion layer 31A can also be formed by a coating type (wet process). In this case, the photoelectric conversion layer 31A is made of a material that combines the above-mentioned low molecular weight organic material and a polymer organic material. As the polymer organic material, for example, P3HT (poly(3-hexylthiophene)), F8BT (F8-alt-benzothiadiazole), etc. can be used. The photoelectric conversion layer 31A can be a film in a state where P3HT and PCBM are mixed, or a film in a state where F8BT and PDI are mixed.

[0073] The lower electrode 35 and the upper electrode 34 face each other with the photoelectric conversion layer 31A interposed therebetween. The upper electrode 34 is made of a conductive material having light-transmitting properties, such as IZO. The lower electrode 35 is made of a conductive material having light-transmitting properties, such as ITO.

[0074] The lower electrode 35 and the upper electrode 34 may be made of a metal material such as silver (Ag) or an alloy material containing at least one of a plurality of metal materials. In this case, the electrode can be formed as a semi-transparent electrode having translucency by controlling the film thickness of the electrode. For example, by forming the electrode from a 10 nm-thick Ag thin film, the electrode has a translucency of about 60%. This allows the optical sensor PDA to detect both light irradiated from the first surface S1 side of the sensor substrate 21 and light irradiated from the second surface S2 side.

[0075] 5B, an insulating layer 24 may be provided to cover the upper electrode 34. The insulating layer is a passivation film, and is provided to protect the photosensor PDA.

[0076] 5B, a switching element Tr electrically connected to the photosensor PDA is provided in the TFT layer 22. The switching element Tr has a semiconductor layer 81, a source electrode 82, a drain electrode 83, and gate electrodes 84 and 85. The lower electrode 35 of the photosensor PDA is electrically connected to the drain electrode 83 of the switching element Tr through a contact hole H11 provided in the insulating layers 23 and 23a.

[0077] The switching element Tr has a so-called dual gate structure in which gate electrodes 84, 85 are provided on both the upper and lower sides of a semiconductor layer 81. However, the switching element Tr is not limited to this, and may have a top gate structure or a bottom gate structure.

[0078] 5B shows a schematic diagram of the second switching element TrA and a terminal portion provided in the peripheral area GA. The second switching element TrA is, for example, a switching element provided in the gate line driving circuit 15 (see FIG. 1). The second switching element TrA has a semiconductor layer 86, a source electrode 87, a drain electrode 88, and a gate electrode 89. The second switching element TrA has a so-called top gate structure in which the gate electrode 89 is provided on the upper side of the semiconductor layer 86. A light-shielding layer 90 is provided below the semiconductor layer 86 between the semiconductor layer 86 and the sensor substrate 21. However, the present invention is not limited to this, and the second switching element TrA may have a bottom gate structure or a dual gate structure.

[0079] The semiconductor layer 81 of the switching element Tr and the semiconductor layer 86 of the second switching element TrA are provided in different layers. The semiconductor layer 81 of the switching element Tr is, for example, an oxide semiconductor. The semiconductor layer 86 of the second switching element TrA is, for example, polysilicon.

[0080] Next, an operation example of the detection device 100 will be described. Fig. 6 is a timing waveform diagram showing an operation example of the detection device. Fig. 7 is a timing waveform diagram showing an operation example of the reset period in Fig. 6. Fig. 8 is a timing waveform diagram showing an operation example of the readout period in Fig. 6. Fig. 9 is a timing waveform diagram showing an operation example of a drive period of one gate line included in the row readout period VR in Fig. 6. Fig. 10 is an explanatory diagram for explaining the relationship between the drive of the sensor unit of the detection device and the lighting operation of the light source.

[0081] As shown in FIG. 6, the detection device 100 has a reset period Prst, an exposure period Pex, and a readout period Pdet. The power supply circuit 123 supplies a sensor power supply signal VDDSNS to the anode of the optical sensor PD throughout the reset period Prst, the exposure period Pex, and the readout period Pdet. The sensor power supply signal VDDSNS is a signal that applies a reverse bias between the anode and the cathode of the optical sensor PD. For example, a reference signal COM of substantially 0.75V is applied to the cathode of the optical sensor PD, but by applying a sensor power supply signal VDDSNS of substantially -1.25V to the anode, the anode and the cathode are reverse biased at substantially 2.0V. The control circuit 122 sets the reset signal RST2 to "H" and then supplies a start signal STV and a clock signal CK to the gate line driving circuit 15, and the reset period Prst begins. In the reset period Prst, the control circuit 122 supplies the reference signal COM to the reset circuit 17, and turns on the fourth switching element TrR for supplying a reset voltage by the reset signal RST2. As a result, the reference signal COM is supplied to each signal line SGL as a reset voltage. The reference signal COM is set to, for example, 0.75 V.

[0082] In the reset period Prst, the gate line driving circuit 15 sequentially selects the gate lines GCL based on the start signal STV, the clock signal CK, and the reset signal RST1. The gate line driving circuit 15 sequentially supplies the gate lines GCL with the gate driving signals Vgcl {Vgcl(1) to Vgcl(M)}. The gate driving signal Vgcl has a pulse-like waveform having a power supply voltage VDD, which is a high-level voltage, and a power supply voltage VSS, which is a low-level voltage. In FIG. 6, M (for example, M=256) gate lines GCL are provided, and the gate driving signals Vgcl(1), ..., Vgcl(M) are sequentially supplied to each gate line GCL, and the switching elements Tr are sequentially turned on for each row, and a reset voltage is supplied. For example, the voltage of 0.75V of the reference signal COM is supplied as the reset voltage.

[0083] Specifically, as shown in Fig. 7, the gate line driving circuit 15 supplies a gate driving signal Vgcl(1) of a high-level voltage (power supply voltage VDD) to the gate line GCL(1) during a period V(1). The control circuit 122 supplies one of the selection signals ASW1, ..., ASW6 (selection signal ASW1 in Fig. 7) to the signal line selection circuit 16 during the period when the gate driving signal Vgcl(1) is at a high-level voltage (power supply voltage VDD). As a result, the signal line SGL of the partial detection area PAA selected by the gate driving signal Vgcl(1) is connected to the detection circuit 48. As a result, a reset voltage (reference signal COM) is also supplied to the connection wiring between the third switching element TrS and the detection circuit 48.

[0084] Similarly, the gate line driving circuit 15 supplies high-level voltage gate driving signals Vgcl(2), ..., Vgcl(M-1), Vgcl(M) to the gate lines GCL(2), ..., GCL(M-1), GCL(M), respectively, during periods V(2), ..., V(M-1), V(M).

[0085] As a result, in the reset period Prst, the capacitance elements Ca in all the partial detection areas PAA are sequentially electrically connected to the signal line SGL and the reference signal COM is supplied. As a result, the capacitance of the capacitance elements Ca is reset. It is also possible to reset the capacitance of some of the capacitance elements Ca in the partial detection area PAA by partially selecting the gate lines and the signal lines SGL.

[0086] Examples of exposure timing include a gate line non-selection exposure control method and a constant exposure control method. In the gate line non-selection exposure control method, gate drive signals {Vgcl(1) to (M)} are sequentially supplied to all gate lines GCL connected to the photosensors PD to be detected, and a reset voltage is supplied to all photosensors PD to be detected. After that, when all gate lines GCL connected to the photosensors PD to be detected are at a low voltage (switching element Tr is off), exposure starts, and exposure is performed during the exposure period Pex. When exposure ends, as described above, gate drive signals {Vgcl(1) to (M)} are sequentially supplied to the gate lines GCL connected to the photosensors PD to be detected, and reading is performed during the readout period Pdet. In the constant exposure control method, it is also possible to control exposure to be performed during the reset period Prst and readout period Pdet (constant exposure control). In this case, the exposure period Pex(1) starts after the gate drive signal Vgcl(1) is supplied to the gate lines GCL during the reset period Prst. Here, the exposure period Pex{(1)...(M)} is a period during which the capacitance element Ca is charged from the photosensor PD. The charge charged in the capacitance element Ca during the reset period Prst flows in the photosensor PD as a reverse current (from the cathode to the anode) due to light irradiation, and the potential difference of the capacitance element Ca decreases. Note that the actual exposure periods Pex(1), ..., Pex(M) in the partial detection areas PAA corresponding to each gate line GCL have different start and end timings. The exposure periods Pex(1), ..., Pex(M) each start at the timing when the gate drive signal Vgcl changes from the high-level voltage of the power supply voltage VDD to the low-level voltage of the power supply voltage VSS during the reset period Prst. Also, the exposure periods Pex(1), ..., Pex(M) each end at the timing when the gate drive signal Vgcl changes from the power supply voltage VSS to the power supply voltage VDD during the readout period Pdet. The exposure time lengths of the exposure periods Pex(1), . . . , Pex(M) are equal.

[0087] In the gate line non-selection exposure control method, in the exposure periods Pex{(1)...(M)}, a current flows in each partial detection area PAA according to the light irradiated to the photosensor PD. As a result, the potential of each capacitance element Ca drops below the reset potential (e.g., 0.75 V).

[0088] Before the readout period Pdet starts, the control circuit 122 sets the reset signal RST2 to a low-level voltage. This stops the operation of the reset circuit 17. The reset signal may be set to a high-level voltage only during the reset period Prst. During the readout period Pdet, as in the reset period Prst, the gate line drive circuit 15 sequentially supplies gate drive signals Vgcl(1), ..., Vgcl(M) to the gate lines GCL.

[0089] 8, the gate line driving circuit 15 supplies a gate driving signal Vgcl(1) of a high-level voltage (power supply voltage VDD) to the gate line GCL(1) during a row readout period VR(1). The control circuit 122 sequentially supplies selection signals ASW1, ..., ASW6 to the signal line selection circuit 16 during the period when the gate driving signal Vgcl(1) is at a high-level voltage (power supply voltage VDD). As a result, the signal lines SGL of the partial detection area PAA selected by the gate driving signal Vgcl(1) are sequentially or simultaneously connected to the detection circuit 48. As a result, the detection signal Vdet is supplied to the detection circuit 48 for each partial detection area PAA.

[0090] Similarly, the gate line driving circuit 15 supplies high-level voltage gate driving signals Vgcl(2), ..., Vgcl(M-1), Vgcl(M) to the gate lines GCL(2), ..., GCL(M-1), GCL(M) during row readout periods VR(2), ..., VR(M-1), VR(M). That is, the gate line driving circuit 15 supplies the gate driving signal Vgcl to the gate line GCL during each row readout period VR(1), VR(2), ..., VR(M-1), VR(M). During each period in which each gate driving signal Vgcl is at a high level voltage, the signal line selection circuit 16 sequentially selects the signal lines SGL based on the selection signal ASW. The signal line selection circuit 16 sequentially connects each signal line SGL to one detection circuit 48. As a result, during the readout period Pdet, the detection device 100 can output the detection signals Vdet of all partial detection areas PAA to the detection circuit 48.

[0091] An example of operation during a row readout period VR, which is a supply period of one gate drive signal Vgcl(j) in Fig. 6, will be described below with reference to Fig. 9. In Fig. 6, the first gate drive signal Vgcl(1) is given the symbol of the row readout period VR, but the same is true for the other gate drive signals Vgcl(2), ..., Vgcl(M). j is a natural number from 1 to M.

[0092] As shown in FIG. 9 and FIG. 4, the output (Vout) of the third switching element TrS is reset to a reference potential (Vref) voltage in advance. The reference potential (Vref) voltage is a reset voltage, for example, 0.75V. Next, the gate drive signal Vgcl(j) becomes high level, the switching element Tr of the row is turned on, and the signal line SGL of each row becomes a voltage corresponding to the charge accumulated in the capacitance (capacitor element Ca) of the partial detection area PAA. After a period t1 has elapsed since the rising edge of the gate drive signal Vgcl(j), a period t2 occurs during which the selection signal ASW(k) becomes high. When the selection signal ASW(k) becomes high and the third switching element TrS is turned on, the output (Vout) (see FIG. 4) of the third switching element TrS changes to a voltage corresponding to the charge accumulated in the capacitance (capacitor element Ca) of the partial detection area PAA due to the charge charged in the capacitance (capacitor element Ca) of the partial detection area PAA connected to the detection circuit 48 via the third switching element TrS (period t3). In the example of FIG. 9, this voltage drops from the reset voltage as in period t3. After that, when the switch SSW is turned on (period t4 when the SSW signal is at a high level), the charge stored in the capacitance (capacitor element Ca) of the partial detection area PAA is transferred to the capacitance (capacitor element Cb) of the detection signal amplifier 42 of the detection circuit 48, and the output voltage of the detection signal amplifier 42 becomes a voltage according to the charge stored in the capacitor element Cb. At this time, the inverting input section of the detection signal amplifier 42 becomes the imaginary short potential of the operational amplifier, so that it returns to the reference potential (Vref). The output voltage of the detection signal amplifier 42 is read out by the A / D converter 43. In the example of FIG. 9, the waveforms of the selection signals ASW(k), ASW(k+1), ... corresponding to the signal lines SGL of each column become high, sequentially turning on the third switching elements TrS, and the same operation is sequentially performed to sequentially read out the charge stored in the capacitance (capacitor element Ca) of the partial detection area PAA connected to the gate line GCL. In addition, ASW(k), ASW(k+1) . . . in FIG. 9 are, for example, any of ASW1 to ASW6 in FIG.

[0093] Specifically, when a period t4 occurs during which the switch SSW is turned on, charge moves from the capacitance (capacitor Ca) of the partial detection area PAA to the capacitance (capacitor Cb) of the detection signal amplifier 42 of the detection circuit 48. At this time, the non-inverting input (+) of the detection signal amplifier 42 is biased to a reference potential (Vref) voltage (for example, 0.75 [V]). For this reason, the output (Vout) of the third switching element TrS also becomes the reference potential (Vref) voltage due to an imaginary short between the inputs of the detection signal amplifier 42. In addition, the voltage of the capacitor Cb becomes a voltage according to the charge accumulated in the capacitance (capacitor Ca) of the partial detection area PAA at the point where the third switching element TrS is turned on in response to the selection signal ASW (k). The output of the detection signal amplifier 42 becomes a voltage according to the capacitance of the capacitor Cb after the output (Vout) of the third switching element TrS becomes the reference potential (Vref) voltage due to an imaginary short, and this output voltage is read by the A / D converter 43. The voltage of the capacitance element Cb is, for example, the voltage between two electrodes provided in a capacitor that constitutes the capacitance element Cb.

[0094] The period t1 is, for example, 20 [μs], the period t2 is, for example, 60 [μs], the period t3 is, for example, 44.7 [μs], and the period t4 is, for example, 0.98 [μs].

[0095] 10, in each of the periods t(1), t(2), t(3), and t(4), the detection device 100 executes the above-mentioned reset period Prst, exposure period Pex{(1)...(M)}, and readout period Pdet. In the reset period Prst and readout period Pdet, the gate line driving circuit 15 sequentially scans the gate lines GCL(1) to GCL(M). In the following description, detection in each period t, that is, detection in which the gate lines GCL(1) to GCL(M) are scanned in the reset period Prst and readout period Pdet and the detection signal Vdet is obtained from the signal line SGL of each column, is referred to as detection of one frame.

[0096] The control circuit 122 can control the lighting and non-lighting of the light sources according to the detection target. Fig. 10 shows an example in which the first light source 61 is turned on during periods t(1) and t(3), and the second light source 62 is turned on during periods t(2) and t(4). That is, in the example shown in Fig. 10, the control circuit 122 alternately switches the first light source 61 and the second light source 62 between lighting and non-lighting for each detection of one frame. This is not limiting, and for example, the control circuit 122 may switch the lighting and non-lighting of the first light source 61 and the second light source 62 for each predetermined period, or may continuously light one of them.

[0097] 6 to 10 show an example in which the gate line driving circuit 15 selects the gate lines GCL individually, but the present invention is not limited to this. The gate line driving circuit 15 may simultaneously select a predetermined number of gate lines GCL (two or more) and sequentially supply the gate driving signal Vgcl to each of the predetermined number of gate lines GCL. The signal line selection circuit 16 may also simultaneously connect a predetermined number of signal lines SGL (two or more) to one detection circuit 48. Furthermore, the gate line driving circuit 15 may scan a plurality of gate lines GCL by thinning them out.

[0098] 8, in a row readout period VR(1), while the gate drive signal Vgcl(1) is at a high-level voltage (power supply voltage VDD), the selection signals ASW1, ..., ASW6 are sequentially supplied to the signal line selection circuit 16. That is, even after the selection signal ASW1 becomes a low-level voltage at time t11, exposure continues during an exposure period Pex-1 until the gate drive signal Vgcl(1) becomes a low-level voltage at time t13. Charges corresponding to the exposure period Pex-1 are charged from the photosensor PD to the signal line SGL(1) corresponding to the selection signal ASW1.

[0099] Similarly, electric charges are stored in each signal line SGL during exposure periods Pex-1, ..., Pex-6 corresponding to each selection signal ASW1, ..., ASW6. For example, the exposure period Pex-6 is the period from when the selection signal ASW6 becomes a low-level voltage at time t12 until when the gate drive signal Vgcl(1) becomes a low-level voltage at time t13, and the exposure period Pex differs for each column.

[0100] Then, in the next row readout period VR(2), a signal that is the sum of the charges stored during the exposure periods Pex-1 (SGL(1))...Pex-6 (SGL(6)) of the previous row readout period VR(1) and the detection signal Vdet for the second row is supplied to the detection circuit 48.

[0101] FIG. 11 is a diagram showing the relationship between the output value of the detection unit and the intensity of the light irradiated to the optical sensor.

[0102] The optical sensors PD provided in the detection area AA of the sensor unit 10 have different characteristics. Therefore, as shown by the solid line in Fig. 11, the output value of the detection circuit 48 varies with the intensity of the irradiated light. Therefore, the detection accuracy may be reduced due to the variation in characteristics of the multiple optical sensors PD provided on the sensor substrate 21 of the same sensor unit 10, and the detection results may vary between different sensor units 10 due to the variation in characteristics of the optical sensors PD.

[0103] In the detection device 100 according to the present disclosure, a correction value corresponding to the intensity of the irradiated light is stored in the memory unit 46 for each optical sensor PD provided in the detection area AA of the sensor unit 10, and in the detection process, the correction value stored in the memory unit 46 is applied to compensate for the variation in output value caused by the characteristic variation of each optical sensor PD so that the output value becomes the reference value shown by the dashed line in FIG. 11.

[0104] Fig. 12 is a schematic diagram showing correlations before and after application of a correction value in a detection process. Fig. 12 shows an example in which light of the same intensity is irradiated onto all the optical sensors PD in the detection area AA.

[0105] The output data value of the detection circuit 48 before application of the correction value is a different value for each optical sensor PD provided in the detection area AA of the sensor unit 10, as shown in the upper diagram of Fig. 12. In the detection device 100 according to the present disclosure, the correction value for each of all optical sensors PD in the detection area AA is applied to the output data value of the detection circuit 48, thereby compensating for the uniform data value, as shown in the lower diagram of Fig. 12.

[0106] FIG. 13 is a diagram showing an example of the correction value data. As shown in FIG. 13, the correction value data includes correction values ​​for all the optical sensors PD in the detection area AA corresponding to the output data value L(i) (i is an integer from 1 to I) of the detection circuit 48. In the present disclosure, the signal processing unit 44 applies the correction value data stored in the storage unit 46 to compensate for the variation in the output value caused by the characteristic variation of the optical sensor PD. Specifically, when the output data value of the detection circuit 48 corresponding to the optical sensor PD(n,m) (the n-th optical sensor PD in the first direction Dx and the m-th optical sensor PD in the second direction Dy) is L(i)(n,m), the signal processing unit 44 calculates the corrected data value L(i)(m,n)' by using the following formula (1).

[0107] L(i)(m,n)'=L(i)(m,n)+ΔL(i)(m,n)...(1)

[0108] This makes it possible to suppress a decrease in detection accuracy caused by characteristic variations in the optical sensors PD provided in the detection area AA of the sensor unit 10. In addition, by generating the correction value data shown in Fig. 13 using the reference values ​​shown by the dashed lines in Fig. 11, it is possible to suppress variations in detection results between different sensor units 10 caused by characteristic variations in the optical sensors PD. Note that the present disclosure is not limited to the method of generating the correction value data shown in Fig. 13.

[0109] Incidentally, the sensor unit 10 and the control unit 20 may be rearranged depending on the usage situation, application, etc. of the detection device 100. Specifically, for example, in a medical field, etc., it is assumed that the sensor unit 10 is replaced for each test subject or each test from the viewpoint of hygiene and prevention of the spread of infectious diseases. In such an operation, it is necessary to update the correction value data stored in the storage unit 46 every time the sensor unit 10 is replaced. Also, for example, it is conceivable that the sensor unit 10 is combined after the shipment of a device incorporating the control unit 20. Hereinafter, a configuration for reflecting the correction value data for each sensor unit 10 in the storage unit 46 of the control unit 20 will be described.

[0110] Fig. 14 is a diagram showing the configuration of a detection system according to an embodiment. As shown in Fig. 14, the detection system 1 according to the embodiment includes a detection device 100 including the above-mentioned sensor unit 10 and control unit 20, a host control device 200, and a data storage unit 300.

[0111] The data storage unit 300 is provided in, for example, a network server NS on the cloud. The data storage unit 300 stores correction value data of the sensor unit 10 (see FIG. 13).

[0112] The data storage unit 300 is exemplified by, for example, a hard disk provided in the network server NS. The data storage unit 300 stores correction value data corresponding to a plurality of sensor units 10. The plurality of correction value data are associated with the sensor units 10 by identification codes. The identification code is assigned individually to each sensor unit 10.

[0113] FIG. 15 is a diagram showing correction value data corresponding to a plurality of sensor units stored in the data storage unit.

[0114] In the data storage unit 300, the correction value data shown in FIG. 13 (data 1, 2,..., q,..., Q in FIG. 15) is stored in association with an identification code corresponding to the sensor unit 10 (00...001, 00...010,..., **...***,..., 11...111).

[0115] The control unit 20 communicates with the host control device 200. Specifically, for example, the interface circuit 126 (see FIG. 1) and the host control device 200 are wired connected with a USB cable to perform wired communication. The host control device 200 performs wireless communication with the network server NS via the network NW.

[0116] FIG. 16 is a flowchart showing an example of the correction value data acquisition process.

[0117] When acquiring the correction value data, after the identification code reading process (step S1) described later, the control unit 20 outputs a request command for the correction value data to which the identification code of the sensor unit 10 is added to the upper control device 200 (step S101), and the upper control device 200 transmits the request command to the network server NS (step S102). When the network server NS receives the request command for the correction value data (step S103), it reads out the correction value data corresponding to the identification code from the data storage unit 300 (step S104) and transmits the correction value data to the upper control device 200 (step S105). When the upper control device 200 receives the correction value data (step S106), it transfers the correction value data to the detection device 100 (step S107). The control unit 20 stores the transferred correction value data in the storage unit 46 (step S108), and ends the correction value data acquisition process.

[0118] The configuration of the detection system 1 is not limited to the embodiment shown in FIG. 14. For example, the control unit 20 may have a wireless communication function with the network server NS. In this case, the control unit 20 may perform wireless communication with the network server NS via the network NW. In addition, the data storage unit 300 is not limited to being provided in the network server NS on the cloud. For example, the data storage unit 300 may be provided in the upper control device 200. In this case, the data storage unit 300 is exemplified by, for example, a hard disk provided in the upper control device 200.

[0119] The identification code of the sensor unit 10 is unique information of the sensor unit 10, and there is a one-to-one correspondence between the identification code of the sensor unit 10 and the correction value data. In the present disclosure, when outputting a request command for correction value data to which an identification code unique to the sensor unit 10 is added in step S101 of the correction value data acquisition process described above, the control unit 20 reads the identification code of the sensor unit 10 using the optical sensor PD provided in the sensor unit 10. Hereinafter, aspects of the identification code according to the embodiment will be described.

[0120] (Embodiment 1) Fig. 17 is a diagram showing an example of an identification code according to embodiment 1. In the example shown in Fig. 17, an individual identification unit 18 is provided in a surrounding area GA outside a detection area AA of the sensor unit 10.

[0121] The individual identification unit 18 is provided with a plurality of code detection areas CAA. The code detection areas CAA in the individual identification unit 18 have the same configuration as the partial detection areas PAA provided in the detection area AA, and each of them is provided with an optical sensor PD. In the individual identification unit 18, the light-shielding patterns 12 are provided in the plurality of code detection areas CAA corresponding to the identification codes of the sensor unit 10, and the individual identification unit 18 is light-shielded. Although FIG. 17 shows an example in which 18 code detection areas CAA are arranged in the first direction Dx and two code detection areas CAA are arranged in the second direction, the aspect of the individual identification unit 18 is not limited to this. In addition, the position where the individual identification unit 18 is provided is not limited to the example shown in FIG. 17.

[0122] 17, the control unit 20 is provided with a code reading unit 50. The code reading unit 50 may be included in the control circuit 122 or the detection circuit 48, for example.

[0123] Fig. 18 is a diagram showing an example of a circuit configuration of the individual identification unit. In the identification code reading process (step S1) of the correction value data acquisition process shown in Fig. 16, the code reading unit 50 controls the switch control line 13 of the individual identification unit 18, reads the identification code defined by the individual identification unit 18 via the read line 14, and outputs the read identification code as serial data.

[0124] Fig. 19 is a diagram showing a schematic cross-sectional structure of the code detection area. As shown in Fig. 19, the light-shielding pattern 12 may be provided on the first surface S1 on the lower electrode 35 side, or on the second surface S2 on the upper electrode 34 side.

[0125] When acquiring the correction value data, the detection value corresponding to the optical sensor PD in the code detection area CAA where light is blocked by the light-blocking pattern 12 has a large difference from the detection values ​​corresponding to the optical sensors PD in the other code detection areas CAA. Each detection value is compared with the reference value Vcomp by the comparator in Fig. 18 and converted into a digital value, which is read by the detection unit 40 as the identification code.

[0126] (Modification) Fig. 20 is a diagram showing an aspect of an individual identification unit according to a modified example of embodiment 1. In the modified example of embodiment 1 shown in Fig. 20, an individual identification unit 18 having a plurality of code detection areas CAA arranged in the first direction Dx is provided between the reset circuit 17 and the detection area AA.

[0127] In the code detection area CAA, similarly to the partial detection area PAA of the detection area AA, an optical sensor is provided, and includes a capacitance element formed in the optical sensor and a switching element provided corresponding to the optical sensor. The configuration in the code detection area CAA is similar to that of the partial detection area PAA in the detection area AA shown in FIG. 4, and therefore a detailed description thereof will be omitted here.

[0128] The gate of the switching element in each code detection area CAA is connected to the gate line GCL(0). The source of the switching element is connected to each signal line SGL. The drain of the switching element is connected to the cathode of the optical sensor and the capacitance element in each code detection area CAA.

[0129] In the modified example of the first embodiment shown in Fig. 20, the identification code defined by the individual identification unit 18 is read by the detection unit 40 via the signal line selection circuit 16. That is, in the embodiment shown in Fig. 20, it is possible to read the identification code without providing a separate code reading unit.

[0130] 20 shows an example in which a code detection area CAA is provided corresponding to adjacent signal lines SGL, but a code detection area CAA may be provided corresponding to signal lines SGL(Mn) (n is an integer of 1 or more) arranged in multiples of M (M is an integer of 2 or more), such as SGL(2n), SGL(3n), SGL(4n), etc., or to signal lines (P+Mn) (P is an integer of 1 or more). Alternatively, the code detection areas CAA may be provided aligned in the second direction Dy, or code detection areas CAA in Q rows and R columns (Q and R are integers of 1 or more) may be provided.

[0131] (Embodiment 2) Fig. 21 is a diagram showing an example of an identification code according to embodiment 2. In the example shown in Fig. 21, an individual identification unit 18a is provided so as to overlap with a detection area AA of a sensor unit 10a.

[0132] In this embodiment, the detection unit 40, like the modified example of embodiment 1, is configured to read the identification code defined by the individual identification unit 18a when acquiring the correction value data. However, this embodiment differs from embodiment 1 in that the individual identification unit 18a is arranged overlapping the detection area AA.

[0133] In this embodiment, the detection surface when detecting biometric information is the first surface S1. In the example shown in FIG. 21, the individual identification unit 18a is provided on the first surface S1 of the sensor substrate 21, and the back side (second surface S2) of the first surface S1 is light-shielded. In this embodiment, the individual identification unit 18a detects biometric information by peeling off the transparent sheet 19 printed with, for example, a barcode, which is attached to the detection area AA of the sensor unit 10a after the correction value data acquisition process shown in FIG. 16. Note that, although FIG. 21 shows an example in which the transparent sheet 19 is attached only to the area including the barcode, the transparent sheet 19 may be in the form of a protective sheet that covers the entire surface of the detection area AA.

[0134] Fig. 22 is a diagram showing an example of an aspect of the individual identification unit according to the second embodiment. As shown in Fig. 22, the individual identification unit 18a may be in an aspect including a position detection pattern 18b having a specific shape around the barcode to indicate the position of the barcode. This allows the detection unit 40 to accurately trace the position of the individual identification unit 18a when acquiring the correction value data. Note that the shape of the position detection pattern 18b is not limited to the aspect shown in Fig. 22.

[0135] When acquiring the correction value data, the detection value corresponding to the optical sensor PD whose light is blocked by the individual identification unit 18a in the above embodiment has a large difference from the detection values ​​corresponding to the other optical sensors PD in the detection area AA. When acquiring the correction value data, the detection unit 40 scans the entire surface of the detection area AA and compares the detection value corresponding to each sensor PD with a predetermined threshold value, thereby being able to read the identification code defined by the individual identification unit 18a.

[0136] Fig. 23 is a flowchart showing an example of an identification code reading process according to embodiment 2. In the identification code reading process (step S1) of the correction value data acquisition process shown in Fig. 16, the detection unit 40 scans the entire surface of the detection area AA to identify the position detection pattern 18b (step S201), specifies the position of the barcode from the identified position detection pattern 18b (step S202), and reads the identification code defined by the individual identification unit 18a (step S203).

[0137] (Embodiment 3) Fig. 24 is a diagram showing an example of an identification code according to embodiment 3. In the example shown in Fig. 24, an individual identification unit 18a is provided on the back side (second surface S2) of the detection surface when detecting biometric information.

[0138] In this embodiment, similarly to the second embodiment, the detection unit 40 reads the identification code defined by the individual identification unit 18a when acquiring the correction value data.

[0139] In this embodiment, the individual identification unit 18a has a barcode printed on the second surface S2. As described above, by configuring the upper electrode 34 with a conductive material having translucency or a semi-transparent electrode having translucency, it is possible to detect light irradiated from the second surface S2 side.

[0140] Fig. 25 is a diagram for explaining a specific example of a configuration provided with an individual identification unit according to embodiment 3. As a specific example of application of the sensor unit 10b according to embodiment 3, for example, an example of detecting a blood vessel pattern such as a pulse wave or veins of a finger Fg will be explained. In Fig. 25, a first light source 61 (or a second light source 62) emits red light or infrared light.

[0141] Optical film is provided on the first surface S1 side and the second surface S2 side of the sensor unit 10b. The film FL1 transmits light traveling in the direction of the hole toward the optical sensor PD and attenuates light traveling in other directions. The film FL1 is also called, for example, a collimating aperture or a collimator. The film FL2 cuts light with a wavelength of, for example, 600 nm or less. Furthermore, a light-shielding film FL3 is provided on the second surface S2 side of the sensor unit 10b.

[0142] In the third embodiment, the correction value data acquisition process shown in Fig. 16 is executed to acquire the correction value data of the sensor unit 10b, and then the light-shielding film FL3 is attached. That is, in the identification code reading process (step S1) of the correction value data acquisition process shown in Fig. 16, the detection unit 40 can read the identification code defined by the individual identification unit 18a by visible light transmitted through the film FL2 from the second surface S2 side of the sensor unit 10b.

[0143] Then, after acquiring the correction value data of the sensor unit 10b, the light-shielding film FL3 is attached, and the first light source 61 (or the second light source 62) is turned on when detecting the biometric information. This enables the detection unit 40 to detect the biometric information (for example, the pulse wave of the finger Fg or the blood vessel pattern such as veins) by the red light or infrared light transmitted through the film FL2 from the first surface S1 side of the sensor unit 10b.

[0144] As in the second embodiment, the individual identification unit 18a may be configured to have, for example, a transparent sheet 19 on which a barcode is printed attached. Also, the individual identification unit 18a may be configured to have, for example, a position detection pattern 18b having a specific shape indicating the position of the barcode provided around the barcode.

[0145] Although the preferred embodiment of the present invention has been described above, the present invention is not limited to such an embodiment. The contents disclosed in the embodiment are merely examples, and various modifications are possible within the scope of the present invention. Appropriate modifications made within the scope of the present invention naturally belong to the technical scope of the present invention. At least one of various omissions, substitutions, and modifications of components can be made within the scope of the gist of each of the above-mentioned embodiments and each modified example. [Explanation of symbols]

[0146] 1. Detection System 10, 10a, 10b Sensor section 11 Detection control section 12 Shading Pattern 13a, 13b Switch control line 14 Readout line 15 Gate line driving circuit 16 Signal line selection circuit 17 Reset Circuit 18,18a Individual Identification Section 18b Position detection pattern 19 Transparent Sheet 20 Control section 21 Sensor board 40 Detection unit 48 Detection Circuit 50 Code reader 61 1st light source (light source) 62 Second light source (light source) 71 Flexible Printed Circuit (FPC) 100 Detection device 122 Control circuit 123 Power supply circuit 126 Interface Circuit 200 Upper control device 300 Data Storage Unit AA detection area CAA coding detection region GA Peripheral Areas GCL Gate line NS Network Server NW Network PD Light Sensor S1 page 1 S2 side 2 SGL signal line Tr switching element Vgcl Gate drive signal

Claims

1. a sensor unit having a plurality of optical sensors provided in a detection area; A control unit that is exchangeably connected to the sensor unit via a flexible printed circuit board and controls the sensor unit; a data storage unit that stores correction value data including a correction value that compensates for the detection values ​​of the plurality of optical sensors to be uniform data values ​​based on the detection values ​​of the plurality of optical sensors irradiated with light of the same intensity, and an identification code that identifies the sensor unit with which the correction value data is associated one-to-one; Equipped with The control unit is A storage unit is provided, and the detection value of the optical sensor is corrected based on the correction value data stored in the storage unit. every time the sensor unit is replaced, a request command for correction value data to which an identification code of the replaced sensor unit is added is output, the correction value data corresponding to the identification code is obtained from the data storage unit, and the correction value data is reflected in the memory unit. Detection system.

2. The sensor unit includes an individual identification unit in which the identification code is defined. The detection system of claim 1 .

3. The individual identification unit is provided in a peripheral area outside the detection area. The detection system of claim 2 .

4. The individual identification unit is provided with a plurality of code detection areas each having an optical sensor, the code detection area is shaded in response to the identification code; The detection system of claim 3 .

5. The individual identification unit is provided so as to overlap the detection area. The detection system of claim 2 .

6. The individual identification unit includes a barcode corresponding to the identification code. The detection system of claim 5 .

7. the individual identification unit includes a position detection pattern that indicates a position of the barcode in the detection area; The detection system of claim 6.

8. The control unit identifies the position detection pattern and specifies the position of the barcode. The detection system of claim 7.

9. The sensor unit has a first surface and a second surface opposite to the first surface. A detection system according to any one of claims 5 to 8.

10. The individual identification unit is provided on the first surface. The detection system of claim 9.

11. The individual identification unit is provided on the second surface. The detection system of claim 9.

12. The individual identification part is printed on the second surface. The detection system of claim 11.

13. the control unit reads out the identification code defined by the individual identification unit based on the detection value of the optical sensor, and obtains correction value data corresponding to the identification code from the data storage unit. A detection system according to any one of claims 2 to 12.

14. The sensor unit has a light source, The control unit turns on the light source when detecting biological information. A detection system according to any one of claims 1 to 13.

15. The light source emits either red light or infrared light when detecting biological information. The detection system of claim 14.

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