Light-emitting device

Abstract

To provide a highly reliable light-emitting device which includes an organic EL element and is lightweight.SOLUTION: There is provided a light-emitting device including: a first organic resin layer; a first glass layer which is over the first organic resin layer and in contact with one face of the first organic resin layer; a second glass layer over a light-emitting element; and a second organic resin layer which is over the second glass layer and in contact with one face of the second glass layer. The first organic resin layer and the first glass layer each have a property of transmitting visible light. The thickness of the first glass layer and the thickness of the second glass layer are independently greater than or equal to 25 μm and less than or equal to 100 μm. The light-emitting element includes, from a first glass layer side, a first electrode having a property of transmitting visible light, a layer containing a light-emitting organic compound, and a second electrode.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] Using organic electroluminescence (EL) The present invention relates to a light emitting device and a lighting device using the light emitting device. [Background technology]

[0002] Research and development of devices that utilize the organic electroluminescence phenomenon (also called organic EL devices) The basic structure of an organic EL element is a pair of electrodes between which a light-emitting organic compound is placed. By applying a voltage to this element, a light-emitting organic compound is Light emission from the compound can be obtained.

[0003] Since organic EL elements can be formed into a film, it is easy to form large-area elements. It is also highly useful as a surface light source for lighting and other applications.

[0004] For example, Non-Patent Document 1 discloses a light-emitting device in which an organic EL element is provided on a plastic substrate. When plastic is used for the substrate, the light emission is slower than when glass is used. The weight of the device can be reduced. [Prior art documents] [Non-patent literature]

[0005] [Non-Patent Document 1] Gi Heon Kim et al., "THIN FILM PASSIVATION FOR LONGEVITY OF ORGANIC LIGHT-EMITTING DEVICES AND ORGANIC", IDW'03, 2003, p.387-390 Summary of the Invention [Problem to be solved by the invention]

[0006] The reliability of organic EL elements is impaired by the intrusion of moisture, oxygen, impurities, etc. There are challenges.

[0007] Moisture, oxygen, or impurities may enter the organic compounds contained in the organic EL element from the outside. Penetration into metal materials can significantly reduce the lifespan of organic electroluminescence (EL) elements. The organic compounds and metal materials used in the elements react with moisture, oxygen, or impurities and deteriorate. This is the case.

[0008] The plastic substrate used in Non-Patent Document 1 is permeable to moisture, oxygen, impurities, etc. Therefore, moisture, oxygen, impurities, etc. from the outside world can be prevented from entering the plastic substrate side. Intrusion can adversely affect the life of organic electroluminescent elements and light emitting devices.

[0009] Therefore, one aspect of the present invention is to provide a light-emitting device that includes an organic EL element and is lightweight and highly reliable. One of the purposes of this agreement is to provide [Means for solving the problem]

[0010] The present inventors have used a substrate in which an organic resin layer and a thin glass layer are bonded together as a substrate for a light-emitting device. We focused on using the following.

[0011] Specifically, one aspect of the present invention is a first organic resin layer and a first organic a first glass layer in contact with one surface of the resin layer; a light emitting element on the first glass layer; and a second glass layer on the first glass layer and a second ferroelectric film on the second glass layer in contact with one surface of the second glass layer. and a first organic resin layer, the first organic resin layer and the first glass layer being translucent to visible light. The first glass layer and the second glass layer each have a thickness of 25 μm or more and 100 μm or less. The thickness of the first glass layer is less than 100 mm, and the light emitting element has a translucency to visible light from the first glass layer side. A light-emitting device having a first electrode, a layer containing a light-emitting organic compound, and a second electrode. .

[0012] By applying one embodiment of the present invention, the weight of the light-emitting device can be reduced. Prevents impurities from entering the organic compounds and metal materials contained in the light-emitting element from the outside of the light-emitting device. It can be suppressed.

[0013] In the light-emitting device, the first organic resin layer and the second organic resin layer are preferably made of the same material. By using the same material, it is possible to suppress deformation due to thermal distortion or physical impact. Therefore, deformation and damage of the light emitting device during manufacture and use can be suppressed. This can be done.

[0014] The light emitting device preferably further comprises a sealing layer in contact with the first glass layer and covering the light emitting element. By providing a sealing layer, moisture, oxygen, impurities, etc. are prevented from entering the light emitting element from the outside. It is possible to further suppress the penetration of the organic compounds and metal materials contained therein.

[0015] In addition, light-emitting devices using organic EL elements emit light in an area with a higher refractive index than the atmosphere. When the light is emitted into the atmosphere, total reflection occurs within the light-emitting device or at the interface between the light-emitting device and the atmosphere. However, there is a problem that the light extraction efficiency of the light emitting device is less than 100%. In recent years, the light extraction efficiency of light emitting devices is said to be approximately 20 to 30%.

[0016] For example, when light is incident from medium A with a high refractive index to medium B with a low refractive index, the angle of incidence is This can cause total reflection.

[0017] In this case, it is preferable to provide an uneven structure at the interface between medium A and medium B. By forming a reflective layer, light incident on medium A beyond the critical angle is totally reflected and reflected by the light emitting device. This can suppress the phenomenon in which light is guided through the insulating layer, resulting in a decrease in the light extraction efficiency.

[0018] The light extraction efficiency of a light-emitting device according to one embodiment of the present invention described below is compared with that of a light-emitting device to which the present invention is not applied. It can be made 1.2 to 2 times the size of the device.

[0019] In the light-emitting device, the first organic resin layer has an uneven structure on a surface that is not in contact with the first glass layer. Since the refractive index of the first organic resin layer is greater than the refractive index of the air, In this case, total reflection may occur at the interface between the first organic resin layer and the air. By providing an uneven structure at the interface of the layers, the amount of light that cannot be extracted into the atmosphere due to total reflection is reduced. The light extraction efficiency of the light emitting device can be improved.

[0020] Generally, the refractive index of glass is about 1.5, and the refractive index of the layer containing the light-emitting organic compound is about 1.5. (for example, 1.6 or more). Therefore, when light enters the first glass layer from the first electrode, Therefore, a concave portion is formed at the interface between the first electrode and the first glass layer. It is preferable to provide a convex structure.

[0021] However, in an organic EL element, if the first electrode has unevenness, the There is a risk of leakage current occurring in a layer containing a light-emitting organic compound.

[0022] Therefore, in the light emitting device, a concave-convex structure is formed on the first glass layer, and a concave-convex structure is formed on the concave-convex structure. A first resin layer and a first electrode on the first resin layer, the refractive index of the first resin layer being It is preferable that the refractive index of the layer containing the photo-sensitive organic compound is equal to or greater than that of the layer containing the photo-sensitive organic compound. In the device, a concave-convex structure is formed on a first glass layer, a first resin layer is formed on the concave-convex structure, and a first electrode on a first resin layer, the refractive index of the first resin layer being smaller than that of the first electrode; It is preferable that the value is equal to or greater than the value.

[0023] With this configuration, a layer having a high light extraction efficiency is formed at the interface between the first resin layer and the first electrode. Since there is no need to provide an uneven structure to suppress the decrease, the first electrode is a flat film. and the leakage current in the layer containing the light-emitting organic compound caused by the unevenness of the first electrode can be prevented. The generation of electric current can be suppressed.

[0024] In addition, since there is a concave-convex structure between the first resin layer and the first glass layer, the total reflection The amount of light that cannot be extracted to the atmosphere can be reduced, and the light extraction efficiency of the light-emitting device can be improved. .

[0025] In the light-emitting device, a first insulating film is provided between the first resin layer and the first electrode. It is preferable that the refractive index of the first protective layer is equal to or higher than the refractive index of the first resin layer. By providing a protective layer, moisture and impurities are prevented from entering the light emitting element through the first resin layer. can be suppressed.

[0026] In the above-described light-emitting device according to one embodiment of the present invention, the light-emitting element is disposed on the substrate side on which the element is formed. Bottom emission structure that emits light from the bottom surface, or a substrate on which the element is formed This is a top emission structure in which light is emitted from the surface opposite the plate. One aspect of the present invention is a dual emission structure that emits light from both sides. can be applied.

[0027] In the light-emitting device, the second organic resin layer, the second glass layer, and the second electrode are By adopting such a configuration, the dual-side emission structure A light emitting device can be realized.

[0028] In the light-emitting device, the second organic resin layer has an uneven structure on a surface that is not in contact with the second glass layer. Since the refractive index of the second organic resin layer is greater than the refractive index of the air, In some cases, total reflection may occur at the interface between the second organic resin layer and the atmosphere. By providing an uneven structure at the interface of the layers, the amount of light that cannot be extracted into the atmosphere due to total reflection is reduced. The light extraction efficiency of the light emitting device can be improved.

[0029] In the light-emitting device, a second resin layer on the second electrode and a concave-convex structure on the second resin layer and a second glass layer on the uneven structure, and the refractive index of the second resin layer is a luminescent material. It is preferable that the refractive index is equal to or higher than that of the layer containing the organic compound.

[0030] Alternatively, in the light emitting device, a second resin layer on the second electrode and unevenness on the second resin layer and a second glass layer on the uneven structure, and the refractive index of the second resin layer is It is preferable that the refractive index of the second electrode is equal to or greater than that of the first electrode.

[0031] With this configuration, a layer having a high light extraction efficiency is formed at the interface between the second resin layer and the second electrode. Since there is no need to provide a concave-convex structure to suppress the decrease, the second electrode is a flat film. The unevenness of the second electrode can prevent leakage current in a layer containing a light-emitting organic compound. The generation of electric current can be suppressed.

[0032] In addition, total reflection may occur at the interface between the second resin layer and the second glass layer. The light emitting device has a concave-convex structure at the interface between the second resin layer and the second glass layer, so that the entire surface of the light emitting device is This reduces the amount of light that cannot be extracted to the atmosphere due to the effects of radiation, and improves the light extraction efficiency of light-emitting devices. This can be done.

[0033] In the light-emitting device, a second resin layer is provided between the second electrode and the second resin layer. It is preferable that the refractive index of the second protective layer is equal to or higher than the refractive index of the second resin layer. The protective layer prevents moisture and impurities from penetrating into the light-emitting element through the second resin layer. It is possible.

[0034] The light emitting device is preferably flexible. For example, the light emitting device may be made of glass. By making each layer between 25μm and 75μm thick, the material is lightweight and resistant to bending and breaking. A light emitting device can be realized.

[0035] Another aspect of the present invention is the light-emitting device including a converter. The converter can be built in without changing the thickness of the light emitting device.

[0036] Another embodiment of the present invention is a lighting device including the above-described light-emitting device in a light-emitting portion. Effect of the Invention

[0037] In one aspect of the present invention, a light-emitting device that includes an organic EL element and is lightweight and highly reliable is provided. It is possible. [Brief description of the drawings]

[0038] [Figure 1] FIG. 1 is a plan view of a light-emitting device according to one embodiment of the present invention. [Diagram 2] 1 is a cross-sectional view of a light-emitting device according to one embodiment of the present invention. [Diagram 3] 1 is a cross-sectional view of a light-emitting device according to one embodiment of the present invention. [Figure 4] 1 is a cross-sectional view of a light-emitting device according to one embodiment of the present invention. [Diagram 5] 1 is a cross-sectional view of a light-emitting device according to one embodiment of the present invention. [Figure 6] 1 is a cross-sectional view of a light-emitting device according to one embodiment of the present invention. [Figure 7] 1A to 1C illustrate a method for manufacturing a light-emitting device according to one embodiment of the present invention. [Figure 8] 1A to 1C illustrate a method for manufacturing a light-emitting device according to one embodiment of the present invention. [Figure 9] 1A to 1C illustrate a method for manufacturing a light-emitting device according to one embodiment of the present invention. [Figure 10] 1A to 1C illustrate a method for manufacturing a light-emitting device according to one embodiment of the present invention. [Figure 11] 1A to 1C illustrate a light-emitting device according to one embodiment of the present invention. [Figure 12] 1A to 1C illustrate a light-emitting device according to one embodiment of the present invention. [Figure 13] 1A to 1C illustrate a light-emitting device according to one embodiment of the present invention. [Figure 14] 1A to 1C illustrate a light-emitting device according to one embodiment of the present invention. [Figure 15] FIG. 1 illustrates an EL layer that can be applied to one embodiment of the present invention. [Figure 16] FIG. 4 is a graph showing the measurement results of the refractive index according to Example 1. [Figure 17] FIG. 4 is a graph showing the measurement results of transmittance according to Example 1. [Figure 18] FIG. 11 is a graph showing the measurement results of the refractive index according to Example 2. [Figure 19] FIG. 11 is a graph showing the measurement results of the refractive index according to Example 2. [Figure 20] FIG. 11 is a graph showing the measurement results of the refractive index according to Example 2. [Figure 21] 1A and 1B illustrate a lighting device according to one embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0039] The embodiment will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiment, and various changes and modifications may be made in the form and details without departing from the spirit and scope of the present invention. It will be easily understood by those skilled in the art that the above-mentioned invention can be obtained by the following embodiments. The present invention should not be construed as being limited to the contents described below. The same reference numerals are used in different drawings to indicate the same parts or parts having similar functions. A repeated explanation will be omitted.

[0040] In this embodiment, the first electrode functions as an anode, and the second electrode functions as a cathode. The present invention is not limited to this, and the first electrode functions as a cathode and the second electrode functions as an anode. and a second electrode.

[0041] (Embodiment 1) In this embodiment, a light-emitting device of one embodiment of the present invention will be described with reference to FIGS.

[0042] FIG. 1 shows a plan view of a light-emitting device according to one embodiment of the present invention. Note that FIG. 1 shows only a part of the configuration (e.g., 2(A) and the like) are omitted.

[0043] In FIG. 1, a first glass layer 101a is formed on a first organic resin layer 100a. A light-emitting element (a first electrode 103, an EL layer 102, and a second electrode 103) is formed on the glass layer 101a. 08). A second glass layer 101b is provided on the light emitting element, and the second glass A second organic resin layer 100b is formed on the glass layer 101b.

[0044] The second electrode 108 is connected to a connection electrode 411. The connection electrode 411 is connected to the first electrode 108. It can be made of the same materials as 03.

[0045] Furthermore, the light-emitting device according to one embodiment of the present invention may include a converter. The light emitting device thus obtained will be described in detail in the seventh embodiment.

[0046] <Configuration example 1> FIG. 2A shows an example of a light emitting device having a bottom emission structure. This corresponds to the cross section between AB.

[0047] The light-emitting device shown in FIG. 2(A) includes a first organic resin layer 100a, a first glass layer 101a, a light-emitting The optical element (the first electrode 103, the EL layer 102, and the second electrode 108), the sealing layer 110, The second glass layer 101b and the second organic resin layer 100b.

[0048] Since the configuration example 1 has a bottom emission structure, the first electrode 103 is transparent to visible light. It has optical properties (hereinafter referred to as translucency).

[0049] In FIG. 2A, the first glass layer 101a and the second glass layer 101b are made of a sealing material. The light emitting device shown in FIG. 2(A) includes a first glass layer 101a, A light emitting element is provided in a space 112 surrounded by the second glass layer 101b and the sealant 114. It has become a success.

[0050] The space 112 is filled with an inert gas (nitrogen, argon, etc.) as a filler. Also, as shown in FIG. 2B, a configuration in which a sealant 114 is filled in may be applied. As shown in FIG. 2C, a filling material different from the sealing material 114 and the sealing material 116 can be used. The space 112 can be filled with a filler 115. Among the materials used as the filling material, a material with low viscosity is used to fill the space 112. This makes it easier.

[0051] A space may be provided between the sealant 114 and the sealant 116 (for example, FIG. 2(A)). In addition, the sealant 114 and the sealant 116 may be in contact with each other (for example, FIG. 2(B)). .

[0052] In addition, in the configuration example 1, the second electrode 108 has a light-transmitting property instead of the first electrode 103. By adopting this configuration, a light emitting device having a top emission structure can be realized.

[0053] <Configuration example 2> FIG. 3 shows another example of a light emitting device having a bottom emission structure. This corresponds to a cross-sectional view.

[0054] The light emitting device shown in FIG. 3 includes a first organic resin layer 100a having a concave-convex structure 118a, a first The glass layer 101a, the light-emitting element (the first electrode 103, the EL layer 102, and the second electrode 108 ), a sealing layer 110, a second glass layer 101b, and a second organic resin layer 100b.

[0055] Since the refractive index of the first organic resin layer 100a is greater than the refractive index of the air, the first organic resin layer Total reflection may occur at the interface between 100a and the atmosphere. Since the uneven structure 118a is provided at the interface of the resin layer 100a, the light is not exposed to the atmosphere due to the effect of total reflection. This reduces the amount of light that cannot be extracted, thereby improving the light extraction efficiency of the light emitting device.

[0056] The other configurations can be the same as those in the first configuration example.

[0057] <Configuration example 3> FIG. 4 shows an example of a light emitting device having a dual emission structure. This corresponds to a cross-sectional view.

[0058] The light emitting device shown in FIG. 4 includes a first organic resin layer 100a, a first glass layer 101a, a light emitting element, and a (first electrode 103, EL layer 102, and second electrode 107), sealing layer 110, second glass The insulating film has a first organic resin layer 101b, and a second organic resin layer 100b.

[0059] The third configuration example is a light emitting device having a dual emission structure. Not only the first electrode 3 but also the second electrode 107 has light-transmitting properties.

[0060] The other configurations can be the same as those in the first configuration example.

[0061] <Configuration Example 4> FIG. 5(A) shows another example of a light emitting device having a dual emission structure. This corresponds to the cross-sectional view between A and B in 1.

[0062] The light-emitting device shown in FIG. 5A includes a first organic resin layer 100a having a concave-convex structure 118a, A first glass layer 101a, a light-emitting element (a first electrode 103, an EL layer 102, and a second electrode 107), a sealing layer 110, a second glass layer 101b, and a second organic resin layer 100b. do.

[0063] The fourth configuration example is a light emitting device having a dual emission structure. The third and second electrodes 107 are light-transmitting.

[0064] Since the refractive index of the first organic resin layer 100a is greater than the refractive index of the air, the first organic resin Total reflection may occur at the interface between the layer 100a and the atmosphere. By providing the uneven structure 118a at the interface of the organic resin layer 100a, the light is reflected by the atmosphere due to the effect of total reflection. This reduces the amount of light that cannot be extracted, thereby improving the light extraction efficiency of the light emitting device.

[0065] Similarly, the surface of the second organic resin layer 100b that comes into contact with the air may have an uneven structure. .

[0066] In the light-emitting device shown in FIG. 5A, light emitted from the EL layer 102 is transmitted through the second electrode 107. The second electrode 107 is then taken out into space 112 (in an inert gas). Since the refractive index is larger than that of the space 112, the total reflection occurs at the interface between the second electrode 107 and the space 112. Therefore, the surface of the second electrode 107 that contacts the space 112 has irregularities. Once the light is extracted to the space 112, it is reflected back into the atmosphere by total reflection or the like. In order to avoid the occurrence of components that cannot be extracted, a concave-convex structure may be provided, but is not essential.

[0067] In addition, in the light emitting device shown in FIG. 5(B), the space is filled with a sealant 114. In this configuration, there is a condition where total reflection occurs at the interface between the second organic resin layer 100b and the atmosphere. Therefore, it is preferable to provide the uneven structure 118b.

[0068] In the light emitting device having a dual emission structure, the first organic resin layer 100a and the second organic resin layer By providing a concave-convex structure on the surface of the organic resin layer 100b that comes into contact with the atmosphere, the influence of total reflection is reduced. This reduces the amount of light that cannot be extracted to the atmosphere due to interference, and improves the light extraction efficiency of light-emitting devices. Cut.

[0069] The other configurations can be the same as those in the first configuration example.

[0070] Examples of materials that can be used for each layer are given below.

[0071] [Organic resin layer] The first organic resin layer 100a and the second organic resin layer 100b may be made of, for example, poly. Polyesters such as ethylene terephthalate (PET) and polyethylene naphthalate (PEN) Polyacrylonitrile resin, Polyimide resin, Polymethyl methacrylate resin , polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide Resin, cycloolefin resin, polystyrene resin, polyamide-imide resin, or polysalt Also, a substrate made of glass fiber impregnated with resin or a substrate made of non-woven fabric can be used. It is also possible to use a substrate in which an inorganic filler is mixed with an organic resin.

[0072] By forming the first organic resin layer 100a and the second organic resin layer 100b from the same material, It is possible to suppress shape defects caused by thermal distortion and physical impact. Therefore, deformation and damage of the light emitting device can be suppressed.

[0073] In addition, when different materials are used for the first organic resin layer 100a and the second organic resin layer 100b, Even in this case, the material combination and film thickness can be adjusted appropriately to prevent shape defects due to thermal distortion or physical impact. It is preferable to have a controlled configuration.

[0074] [Glass layer] The material of the first glass layer 101a and the second glass layer 101b is a glass having a thickness of 25 μm or more and 10 Glass having a thickness of 0 μm or less can be used.

[0075] In the light-emitting device according to one embodiment of the present invention, an organic resin layer and a glass substrate are used as a support substrate and a sealing substrate for a light-emitting element. This allows the light-emitting device to be lightweight. Or impurities may enter the organic compounds or metal materials contained in the light-emitting element from the outside of the light-emitting device. This can be suppressed.

[0076] [Light emitting element] The configuration examples 1 and 2 are light emitting devices having a bottom emission structure. The light-emitting device 03 has a light-transmitting property. Also, the configuration examples 3 and 4 are light-emitting devices with a dual emission structure. Therefore, the first electrode 103 and the second electrode 107 have light-transmitting properties.

[0077] A light-transmitting material that can be used for the first electrode 103 (or the second electrode 107) Examples include indium oxide, indium tin oxide (ITO), indium zinc oxide, and oxide Zinc, zinc oxide doped with gallium, graphene, etc. can be used.

[0078] The first electrode 103 (or the second electrode 107) may be made of gold, platinum, nickel, tungsten, or the like. Metallic materials such as stainless steel, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium Alternatively, nitrides of these metal materials (e.g., titanium nitride) can be used. In addition, when a metal material (or its nitride) is used, it is necessary to make the material thin enough to have light transmission. Just make it better.

[0079] The EL layer 102 includes at least a layer containing a light-emitting organic compound. a layer containing a substance with high hole transporting properties; and a layer containing a substance with high electron injecting properties. a layer including a substance having high hole-injecting properties, a layer including a bipolar substance (having high electron-transporting and hole-transporting properties), The EL layer 102 can be formed by appropriately combining layers containing a material such as a fluorine-containing material. An example of this configuration will be described in detail in the eighth embodiment.

[0080] In the configuration examples 1 and 2, the second electrode 108 is provided on the side opposite to the side from which light is extracted. The reflecting surface is formed of a material having reflectivity. The reflecting surface is formed of aluminium. Aluminum, gold, platinum, silver, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, Metal materials such as aluminum and titanium can also be used. Aluminum alloys, aluminum-nickel alloys, aluminum-neodymium alloys, etc. It is also possible to use alloys containing silver, such as aluminum alloys and silver-copper alloys. The silver-copper alloy is preferable because of its high heat resistance. The oxidation of the aluminum alloy film is suppressed by laminating a metal film or a metal oxide film. Examples of materials for the metal film and metal oxide film include titanium and titanium oxide. do.

[0081] [Sealing layer] The sealing layer 110 is in contact with the first glass layer 101a and covers the light emitting element. Although it is not necessary to provide a filter, providing one prevents moisture or impurities from entering the light-emitting element from the outside. This further prevents the organic compounds and metal materials contained in the semiconductor device from penetrating the semiconductor device. The material of the layer 110 may be, for example, silicon nitride, silicon oxide, alumina, etc. can.

[0082] [Sealing material] The sealing material may be a known material. For example, a thermosetting material or an ultraviolet curing material may be used. The sealant 114 may be a material capable of bonding glass to glass. The material for the sealing material 116 is a material capable of bonding organic resins together. It is preferable that the material is as moisture and oxygen impermeable as possible. Also, it should contain a desiccant. It is also possible to use a sealing material such as the above.

[0083] A desiccant may be placed in the space 112. For example, an oxide of an alkaline earth metal (cathode) may be used. The use of substances that absorb water by chemical adsorption, such as calcium oxide or barium oxide, Other drying agents such as zeolite and silica gel can be used to absorb water by physical adsorption. A substance that absorbs moisture may also be used.

[0084] [Uneven structure formed on organic resin layer] The uneven structure 118a and the uneven structure 118b are effective even if they are in a stripe shape. The pattern of the projections and recesses is not particularly limited. For example, The shape can be a sphere, a cone, a pyramid (triangular pyramid, square pyramid, etc.), an umbrella, or any other shape with a vertex. Cut.

[0085] The size and height of the unevenness are preferably about 0.1 μm or more and 1000 μm or less. However, structures with sizes and heights exceeding 1000 μm may be used. This is preferable because it is possible to suppress the influence of light interference.

[0086] The patterns are preferably provided so that no gaps are formed between adjacent portions. Therefore, it is preferable that the pattern has a shape that can be arranged on a plane without gaps. In addition, the pattern may be formed on the entire surface or a part of the surface of the organic resin layer that is in contact with the atmosphere. It is preferable that it is formed in the light emitting region.

[0087] Methods for directly forming a concave-convex structure on an organic resin layer include, for example, etching and abrasive processing. Sandblasting, microblasting, droplet ejection, and printing (screen Printing and offset printing are used to form patterns, spin coating and other coating methods, A dipping method, a dispenser method, a nanoimprint method, or the like can be used as appropriate.

[0088] Alternatively, a hemispherical lens, a microlens array, or a concave-convex structure is applied to the surface of the organic resin layer. The uneven structure is created by bonding the film, light diffusion film, etc., using a known adhesive. It may be formed.

[0089] As described above, the light-emitting device described in this embodiment mode has a structure in which the light-emitting element is formed of a support substrate and a sealing substrate. Therefore, a substrate in which an organic resin layer and a glass layer are bonded together is used. This makes it possible to reduce the weight of the light-emitting device. Furthermore, moisture or impurities may enter the organic compounds and the like contained in the light-emitting element from the outside of the light-emitting device. It is possible to suppress the penetration into metal materials.

[0090] Furthermore, by providing a concave-convex structure on the surface of the light-emitting device that comes into contact with the atmosphere, the effect of total reflection can be reduced. This reduces the amount of light that cannot be extracted to the atmosphere, and improves the light extraction efficiency of the light-emitting device. do.

[0091] This embodiment mode can be freely combined with other embodiment modes.

[0092] (Embodiment 2) In this embodiment, a method for manufacturing a light-emitting device according to one embodiment of the present invention described in Embodiment 1 will be described. This will be explained with reference to FIGS.

[0093] "Production Method 1" <Configuration example 1> An example of a manufacturing method of the configuration example 1 (see FIG. 2A) will be described with reference to FIG.

[0094] First, a first glass layer 101a is formed on a first organic resin layer 100a using an adhesive. (Figure 7(A)).

[0095] Next, a light-emitting element (a first electrode 103, an EL layer 102, and A second electrode 108) is formed.

[0096] The first electrode 103 and the second electrode 108 are formed by sputtering or vapor deposition (vacuum The EL layer 102 can be formed by a deposition method (including a vacuum deposition method). The conductive layer can be formed by a method such as a conductive film, an ink jet method, a coating method, or the like.

[0097] Then, a sealing layer 110 is formed on the first glass layer 101a so as to cover the light emitting element. (FIG. 7(B)). In this embodiment, a silicon nitride film is formed by using a sputtering method. .

[0098] The first glass layer 101a and the second glass layer 101b are then sealed together using a sealant 114. In this embodiment, the sealing material 114 is a sealing material containing a desiccant. The sealing material is used.

[0099] Furthermore, the first organic resin layer 100a and the second organic resin layer 100b are bonded to each other by a sealant 116. (Figure 7(D)).

[0100] Through the above steps, the light emitting device shown in Configuration Example 1 can be manufactured.

[0101] <Configuration example 2> After the manufacturing process of the configuration example 1, the uneven structure 1 is formed on the surface of the first organic resin layer 100a that is in contact with the air. By providing 18a, the configuration example 2 (see FIG. 3) can be manufactured (FIG. 7(E)). There is no limitation on the timing for forming the concave-convex structure 118a on the first organic resin layer 100a. This can prevent the concave-convex structure 118a from being damaged during the process of forming the concave-convex structure 118a or during transportation. After the light emitting element or the like is formed on the first organic resin layer 100a (or after sealing), the uneven structure is formed. It is preferable to form a structure 118a.

[0102] The other layers can be formed by the same method as in Configuration Example 1.

[0103] <Configuration example 3> In the manufacturing process of the above-mentioned configuration example 1, the second electrode is formed using a light-transmitting material. Thus, the third structural example (see FIG. 4) can be produced. The other layers are the same as those in the first structural example. The fabrication method can be applied.

[0104] <Configuration Example 4> After the manufacturing process of the configuration example 3, the uneven structure 1 is formed on the surface of the first organic resin layer 100a that is in contact with the air. By providing 18a, the fourth structural example shown in FIG. 5(A) can be manufactured. By providing the uneven structure 118b on the surface of the organic resin layer 100b in contact with the air, It is possible to fabricate the fourth configuration example shown in B).

[0105] The light-emitting device of one embodiment of the present invention described in Embodiment 1 can be manufactured by the above-described method. can.

[0106] "Production Method 2" <Configuration example 1> Another example of the manufacturing method of Structure Example 1 (see FIG. 2A) will be described with reference to FIGS.

[0107] First, a light-emitting element (a first electrode 103, an EL layer 102, and A second electrode 108) is formed on the first glass layer 101a to cover the light emitting element. The sealing layer 110 is formed in this manner (FIG. 8(A)).

[0108] Here, when the first glass layer 101a is flexible, the first glass layer 101a is rolled. A roll-to-roll method can be used to form a light-emitting element on 01a.

[0109] Next, the first glass layer 101a and the second glass layer 101b are sealed together using a sealant 114. The structure shown in FIG. 8(B) is hereinafter referred to as laminate A.

[0110] Furthermore, the first organic resin layer 100a and the second organic resin layer 100b are bonded to each other by a sealant 116. The laminate A is then sealed using a sealant (FIG. 8(C)).

[0111] In this embodiment, the laminate A is a laminate including a first organic resin layer 100a and a second organic resin layer 100. b) and insert it between a pair of pressure rollers. Then, it is heated and pressed. The first organic resin layer 100a and the second organic resin layer 100b are formed of an adhesive or a sealant. 16 is applied in advance (or can be dropped or laminated), and the first organic The resin layer 100a and the first glass layer 101a, the second organic resin layer 100b and the second glass The first organic resin layer 100a and the second organic resin layer 100b are In addition, the adhesive or sealant is not a heat-curing type (for example, an ultraviolet-curing type). In this case, no heating is required.

[0112] Through the above steps, the light emitting device shown in Configuration Example 1 can be manufactured.

[0113] <Configuration example 2> After the manufacturing process of the configuration example 1, the uneven structure 1 is formed on the surface of the first organic resin layer 100a that is in contact with the air. By providing 18a, the configuration example 2 (see FIG. 3) can be manufactured (FIG. 8(D)). Alternatively, the first organic resin layer 100a having the concave-convex structure 118a is covered with a sealant 116. Alternatively, the second organic resin layer 100b may be bonded to the second organic resin layer 100b using a bonding agent.

[0114] The other layers can be formed by the same method as in Configuration Example 1.

[0115] <Configuration example 3> In the manufacturing process of the above-mentioned configuration example 1, the second electrode is formed using a light-transmitting material. Thus, the third structural example (see FIG. 4) can be produced. The other layers are the same as those in the first structural example. The fabrication method can be applied.

[0116] <Configuration Example 4> After the manufacturing process of the configuration example 3, the uneven structure 1 is formed on the surface of the first organic resin layer 100a that is in contact with the air. By providing 18a, the fourth structural example shown in FIG. 5(A) can be manufactured. By providing the uneven structure 118b on the surface of the organic resin layer 100b in contact with the air, It is possible to fabricate the fourth configuration example shown in B).

[0117] Alternatively, a first organic resin layer 100a having a concave-convex structure 118a and a concave-convex structure 11 The second organic resin layer 100b on which the insulating film 8b is provided is attached to the second organic resin layer 100b using a sealant 116. is also good.

[0118] Through the above-described manufacturing method, a light-emitting device of one embodiment of the present invention can be manufactured.

[0119] This embodiment mode can be freely combined with other embodiment modes.

[0120] (Embodiment 3) In this embodiment, a light-emitting device according to one embodiment of the present invention having a structure different from that described in Embodiment 1 will be described. This will be explained with reference to FIG. 1 and FIG.

[0121] In the first embodiment, the first electrode 103 of the light-emitting element and the first glass layer 101a are in contact with each other. The structure is shown in Fig. 2 to Fig. 5. Generally, the refractive index of glass is about 1.5, and EL The refractive index of the first electrode 103 is lower than that of the second electrode 102 (for example, 1.6 or more). When light enters the first glass layer 101a, it may be totally reflected. It is preferable to provide a relief structure between the electrode 103 and the first glass layer 101a.

[0122] However, if the first electrode 103 has unevenness, the EL layer 1 formed on the first electrode 103 may be damaged. 02, etc., there is a risk of leakage current.

[0123] The light-emitting device described in this embodiment has a concave-convex structure on a first glass layer. A first resin layer is provided on the structure, and a first electrode is provided on the flat first resin layer. It is possible to suppress the occurrence of leakage current in the EL layer, etc.

[0124] In addition, since the structure has a concave-convex structure, the entire surface of the interface between the first glass layer and the first resin layer is uniform. This reduces the amount of light that cannot be extracted to the atmosphere due to the effects of radiation, and improves the light extraction efficiency of light-emitting devices. This can be done.

[0125] The first resin layer is made of a material having a refractive index equal to or higher than that of the EL layer (particularly, a layer containing a light-emitting organic compound). By forming the light emitting device by the above method, it is possible to realize a light emitting device having a configuration in which total reflection occurring within the light emitting device is suppressed. It is possible.

[0126] <Configuration Example 5> FIG. 6A shows an example of a light emitting device having a bottom emission structure.

[0127] The light-emitting device shown in FIG. 6A includes a first organic resin layer 100a having a concave-convex structure 118a, A first glass layer 101a having a concave-convex structure 122a, a first resin layer 124a, a first A protective layer 120a, a light-emitting element (a first electrode 103, an EL layer 102, and a second electrode 108) , a second glass layer 101b, and a second organic resin layer 100b.

[0128] Since the configuration example 5 has a bottom emission structure, the first electrode 103 has light transmitting properties.

[0129] In the fifth configuration example, the refractive index of the first resin layer 124a is set to the refractive index of the luminescent active material of the EL layer 102. The refractive index of the layer containing the organic compound is equal to or greater than the refractive index of the first electrode 103. The refractive index of the protective layer 120a is equal to or greater than the refractive index of the first resin layer 124a. By doing so, the interface between the first resin layer 124a and the first protective layer 120a and the first protective layer 120b are The total reflection at the interface between the layer 120a and the first electrode 103 can be suppressed. can.

[0130] In the fifth example configuration, the refractive index of the first glass layer 101a is set to the refractive index of the luminescent material of the EL layer 102. The refractive index of the first glass layer 1 is lower than that of the layer containing an organic compound (for example, 1.6 or more). There are conditions under which total reflection occurs at the interface between the 01a and the first resin layer 124a.

[0131] In the fifth configuration example, the first glass layer 101a has an uneven structure on the surface in contact with the first resin layer 124a. Therefore, the light incident beyond the critical angle is totally reflected and the light is guided through the light emitting device. This can suppress the phenomenon in which light is guided and the light extraction efficiency is reduced.

[0132] The other configurations can be the same as those in the first configuration example.

[0133] <Configuration Example 6> FIG. 6B shows an example of a light emitting device having a dual emission structure.

[0134] The light-emitting device shown in FIG. 6B includes a first organic resin layer 100a having a concave-convex structure 118a, A first glass layer 101a having a concave-convex structure 122a, a first resin layer 124a, a first A protective layer 120a, a light-emitting element (a first electrode 103, an EL layer 102, and a second electrode 107) , a second protective layer 120b, a second resin layer 124b, and a second recessed and raised structure 122b. The glass layer 101b and the second organic resin layer 100b are provided with a relief structure 118b. .

[0135] Since the configuration example 6 has a dual emission structure, the first electrode 103 and the second electrode 1 07 has translucency.

[0136] In the sixth configuration example, the refractive index of the first resin layer 124a is set to the refractive index of the luminescent active material of the EL layer 102. The refractive index of the layer containing the organic compound is equal to or greater than the refractive index of the first electrode 103. The refractive index of the resin layer 124b is equal to the refractive index of the layer containing the light-emitting organic compound included in the EL layer 102. or more than the refractive index of the second electrode 108. The refractive index of the first protective layer 120a is , which is equal to or greater than the refractive index of the first resin layer 124a. The refractive index of the second protective layer 120b is The refractive index is equal to or greater than that of the second resin layer 124b.

[0137] With this configuration, the interface between the first resin layer 124a and the first protective layer 120a, The interface between the first protective layer 120a and the first electrode 103, the interface between the second resin layer 124b and the second protective At the interface with the second protective layer 120b and at the interface between the second protective layer 120b and the second electrode 107, In each case, the occurrence of total reflection can be suppressed.

[0138] In the sixth configuration example, the refractive index of the first glass layer 101a and the second glass layer 101b is EL The refractive index of the layer 102 is lower than that of the layer containing the light-emitting organic compound (for example, 1.6 or more). Therefore, the interface between the first glass layer 101a and the first resin layer 124a and the interface between the second glass layer There are conditions under which total reflection occurs at the interface between the layer 101b and the second resin layer 124b.

[0139] In the sixth configuration example, the first glass layer 101a has an uneven structure on the surface in contact with the first resin layer 124a. Further, the second glass layer 101b is bonded to the second resin layer 124b. Therefore, the light incident at an angle exceeding the critical angle is totally reflected. This makes it possible to suppress the phenomenon in which light is guided within the light emitting device, resulting in a decrease in the light extraction efficiency.

[0140] The other configurations can be the same as those in the first configuration example.

[0141] Examples of materials that can be used for each layer are given below.

[0142] Organic resin layer, glass layer, light-emitting element, and unevenness formed in the organic resin layer in this embodiment mode This structure can be formed using the same materials as in the first embodiment.

[0143] [Resin layer] The material of the first resin layer 124a and the second resin layer 124b is a liquid or resin having a high refractive index. The first resin layer 124a and the second resin layer 124b are light-transmitting. Examples of resins with a high refractive index include resins containing bromine and resins containing sulfur. For example, sulfur-containing polyimide resins, episulfide resins, thiourethane resins, or brominated aromatic resins. Resins can be used. PET (polyethylene terephthalate), TAC (Triacetyl cellulose) can also be used. and methylene iodide-containing contact liquid (refractive liquid). For example, the above-mentioned resin can be applied by spin coating. The adhesive strength can be obtained by forming a film using the adhesive and curing it with heat or light. The material can be appropriately selected taking into consideration the ease of processing and other factors.

[0144] [Protective layer] The first protective layer 120a and the second protective layer 120b may be, for example, a silicon nitride film or a nitride film. A silicon oxide film, an aluminum nitride film, or the like can be used. The second protective layer 120b is not necessarily provided, but may be provided between the first resin layer 124a and the second This can prevent moisture from penetrating into the EL layer 102 through the resin layer 124b, and thus the light-emitting device The decrease in life span can be suppressed.

[0145] [Uneven structure formed on glass layer] The uneven structure is a hemispherical lens, a microlens array, or an uneven structure on the surface of a glass layer. The film, which has been coated with the light, the light diffusion film, etc. are bonded with a known adhesive, etc. It is possible.

[0146] The uneven structure formed on the glass layer is effective even if it is in a stripe shape, but it is also effective if it is in a matrix shape. The pattern of the projections and recesses is not particularly limited, and may be, for example, a hemispherical or circular shape. The shape may be a pyramid, a pyramid (triangular pyramid, square pyramid, etc.), an umbrella-like shape, or the like having a vertex.

[0147] The size and height of the unevenness are preferably about 0.1 μm or more and 1000 μm or less. In particular, if the thickness is 1 μm or more, the effect of optical interference can be suppressed, and this is therefore preferable. In addition, the size and height of the unevenness affect the amount of material used in the resin layer. If the size and height of the resin layer are less than 100 μm, a large amount of material will be used for the resin layer. This can be suppressed, which is preferable.

[0148] Within the range of the size of the irregularities formed on the glass layer, if the irregularity pattern has periodicity, the irregularities By acting like a diffraction grating, the interference effect is strengthened, and light of certain wavelengths is captured by the atmosphere. Therefore, it is preferable that the concave-convex pattern does not have periodicity. Moreover, it is sufficient that the pattern is formed at least in the light emitting region.

[0149] As described above, the light-emitting device described in this embodiment mode has a structure in which the light-emitting element is formed of a support substrate and a sealing substrate. Therefore, a substrate in which an organic resin layer and a glass layer are bonded together is used. This makes it possible to reduce the weight of the light-emitting device. Furthermore, moisture or impurities may enter the organic compounds and the like contained in the light-emitting element from the outside of the light-emitting device. It is possible to suppress the penetration into metal materials.

[0150] Furthermore, in the light-emitting device, by providing unevenness at the interface where total reflection occurs, Light that is incident beyond the field angle is totally reflected, and the light is guided within the light-emitting device, reducing the light extraction efficiency. This phenomenon can be suppressed.

[0151] This embodiment mode can be freely combined with other embodiment modes.

[0152] (Embodiment 4) In this embodiment, a method for manufacturing a light-emitting device according to one embodiment of the present invention, which is described in Embodiment 3, will be described. This will be explained with reference to FIG. 9 and FIG.

[0153] <Configuration Example 5> An example of a manufacturing method of Structure Example 5 (see FIG. 6A) will be described with reference to FIGS.

[0154] First, a first glass layer 101a is formed on a first organic resin layer 100a using an adhesive; A concave-convex structure 122a is formed on the first glass layer 101a (FIG. 9(A)).

[0155] Next, a first resin layer 124a is formed on the concave-convex structure 122a. The layer 124a is formed so that the other surface is flat compared to the surface in contact with the uneven structure 122a. (Figure 9(B)).

[0156] Then, the first protective layer 120a is formed on the first resin layer 124a. A light-emitting element (a first electrode 103, an EL layer 102, and a second electrode 108) is formed on a. (Figure 9(C)).

[0157] Thereafter, the first glass layer 101a and the second glass layer 101b are sealed with a sealant (not shown). Then, the first organic resin layer 100a and the second organic resin layer 100 are bonded to each other using a bonding agent. At this time, the first substrate 118a on which the concave-convex structure 118 is formed is adhered to the second substrate 118b using a sealant. The first organic resin layer 100a can be bonded to the second organic resin layer 100b. After the first organic resin layer 100a and the second organic resin layer 100b are bonded together, A structure 118a may be formed.

[0158] By the above steps, the light emitting device shown in Configuration Example 5 can be manufactured (FIG. 9(D)).

[0159] In addition, as in the manufacturing method 2 described in the embodiment mode 2, a light-emitting element is formed on the first glass layer 101a. etc. are produced, and the first glass layer 101a and the second glass layer 101b are bonded together, and then, The first organic resin layer 100a and the second organic resin layer 100b are each formed on the first glass layer 1. It may be bonded to the first glass layer 101a or the second glass layer 101b.

[0160] <Configuration Example 6> An example of a manufacturing method of the configuration example 6 (see FIG. 6B) will be described with reference to FIGS. 9 and 10. do.

[0161] First, in the same manner as in the fabrication process of the fifth configuration example, the first glass layer 10 is formed on the first organic resin layer 100a. 1a, and a concave-convex structure 122a is formed on the first glass layer 101a (FIG. 9(A) Next, a first resin layer 124a is formed on the concave-convex structure 122a. The resin layer 124a has a surface that is flatter than the surface that is in contact with the uneven structure 122a. (FIG. 9(B)).

[0162] Then, the first protective layer 120a is formed on the first resin layer 124a. A light-emitting element (a first electrode 103, an EL layer 102, and a second electrode 108) is formed on a. (Figure 9(C)).

[0163] On the other hand, as shown in FIG. 10(A), a concave-convex structure 122b is formed on the second glass layer 101b. Then, a second resin layer 124b is formed on the uneven structure 122b, and the second resin layer 124 The second protective layer 120b is formed on the second resin layer 124b. The other surface is formed to be flatter than the surface in contact with the body 122b.

[0164] Then, the first glass layer 101a and the second glass layer 101b are sealed with a sealant (not shown). ) to paste them together (Figure 10(B)).

[0165] Furthermore, the first organic resin layer 100a and the second organic resin layer 100b are sealed with a sealant. At this time, the first organic resin layer 100a having the concave-convex structure 118a formed thereon is It can be bonded to the second organic resin layer 100b on which the concave-convex structure 118b is formed. After the first organic resin layer 100a and the second organic resin layer 100b are bonded together, A concave-convex structure 118a and a concave-convex structure 118b may be formed.

[0166] By the above steps, the light-emitting device shown in Configuration Example 6 can be manufactured (FIG. 10C). .

[0167] In addition, as in the manufacturing method 2 described in the embodiment mode 2, a light-emitting element is formed on the first glass layer 101a. etc. are produced, and the first glass layer 101a and the second glass layer 101b are bonded together, and then, The first organic resin layer 100a and the second organic resin layer 100b are each formed on the first glass layer 1. It may be bonded to the first glass layer 101a or the second glass layer 101b.

[0168] This embodiment mode can be freely combined with other embodiment modes.

[0169] (Embodiment 5) In this embodiment, a light-emitting device according to one embodiment of the present invention having a structure different from that described in the previous embodiment will be described. We will explain about this.

[0170] In a light-emitting device, light is incident from an EL layer into a medium with a refractive index different from that of the EL layer. When light strikes a surface, some of the light is reflected. The greater the difference in refractive index between the two media, the more likely the light is to be reflected. This reduces the light extraction efficiency of the light emitting device.

[0171] In the first embodiment, the first electrode 103 of the light-emitting element and the first glass layer 101a are in contact with each other. The structure is shown in FIG. 2 to FIG. 5.

[0172] In general, the refractive index of glass is about 1.5. The refractive index of the first electrode 103 is, for example, I In the case of using TO, the value is 2.0. The poles 103 may have a large refractive index difference.

[0173] The light-emitting device described in this embodiment has a structure in which gallium (Ga) or aluminum (Al) is provided between the glass layer and the electrode. The insulating film contains aluminum (Al), zinc (Zn), and oxygen (O). The refractive index of the insulating film containing Al, Zn, and O is the same as the refractive index of the glass layer and the refractive index of the electrode. Since the difference between the refractive indices is less than 0.2, it is possible to suppress light reflection due to the difference in refractive index. do.

[0174] Furthermore, if the difference in refractive index between adjacent layers is 0.15 or less, the light (normal incidence) caused by the difference in refractive index is reduced. The smaller the difference in refractive index, the lower the reflection of the light. In this way, it is possible to suppress the reflection of light due to the difference in refractive index.

[0175] <Configuration Example 7> FIG. 11 shows an example of a light emitting device having a bottom emission structure. This corresponds to a cross-sectional view.

[0176] The light emitting device shown in FIG. 11 includes a first organic resin layer 100a, a first glass layer 101a, an insulating film, and a 138, light-emitting element (first electrode 103, EL layer 102, and second electrode 108), sealing layer 110, a second glass layer 101b, and a second organic resin layer 100b.

[0177] Since the configuration example 7 has a bottom emission structure, the first electrode 103 has light transmitting properties.

[0178] In the seventh configuration example, the sealing layer 110 covers the entire insulating film 138 and the light emitting element. The present invention is not limited to this. For example, the sealing layer 110 may be formed on a part of the insulating film 138, and the light-emitting element may be formed on the sealing layer 110. It may also be configured to cover the child.

[0179] The refractive index of the insulating film 138 is set so that the difference between the refractive index of the insulating film 138 and the refractive index of the adjacent layer is 0.2 or less. The insulating film 138 is made of one or more insulating layers containing Ga or Al, Zn, and O.

[0180] The refractive index of the first glass layer 101a is 1.5, and the refractive index of the first electrode 103 is 2.0. In some cases, for example, the insulating film 138 is made up of two layers, the first layer on the first glass layer 101a. An insulating film having a refractive index of 1.7 and containing Ga, Zn, and O is provided on the insulating film. By providing an insulating film containing Ga, Zn, and O and having a refractive index of 1.8, which is in contact with the electrode 103, the refractive index It is possible to suppress light reflection due to the difference in refractive index.

[0181] The insulating film 138 is light-transmitting. Therefore, it does not hinder the extraction of light and is preferably It can be used.

[0182] The insulating film 138 may contain nitrogen (N). This allows the refractive index of the insulating film to be set to a desired value while maintaining the transparency to visible light. can be done.

[0183] For example, the insulating film 138 may be made of a Ga-Zn-O material, an Al-Zn-O system materials, Ga-Zn-ON system materials, Al-Zn-ON system materials, Ga-Al-Z Examples of the materials include Ga-Al-Zn-ON materials and Ga-Al-Zn-ON materials. A-Zn-O-based material means a material whose main components are gallium, zinc, and oxygen. be.

[0184] The insulating film 138 has an atomic ratio of Ga, Al, Zn, O, and N in total of 0.90 or more. It is preferable that the atomic ratio is 0.97 or more, and it is particularly preferable that the atomic ratio is 0.97 or more. The total atomic ratio of elements other than Al, Zn, O, and N is preferably 0.10 or less. An atomic ratio of 0.03 or less is particularly preferred.

[0185] The insulating film 138 is formed by depositing, for example, a Ga—Zn—O-based metal oxide target (Ga 2 O 3 :ZnO = 1:5 to 5:1 [molar ratio]) and under oxygen atmosphere or argon and oxygen (flow ratio As an example, the film is formed by sputtering in a mixed atmosphere of argon and oxygen (7:3). In addition, the Al-Zn-O metal oxide target (Al 2 O 3 :Zn O = 1:5 to 5:1 [molar ratio]) and form a film under the same atmosphere. In addition, a similar target was used with argon, oxygen and nitrogen (flow ratio is as follows: The film was formed under a mixed atmosphere of gallium, oxygen, and nitrogen (Ga:O:N = 3:6:1), An insulating film containing Zn and O can be obtained.

[0186] The specific resistance of the insulating film 138 at 20° C. is 10 10 When the resistivity is Ωcm or more, the insulating film 138 This is preferable since it can provide sufficient insulation.

[0187] As described above, the light-emitting device described in this embodiment mode has a structure in which the light-emitting element is formed of a support substrate and a sealing substrate. Therefore, a substrate in which an organic resin layer and a glass layer are bonded together is used. This makes it possible to reduce the weight of the light-emitting device. Furthermore, moisture or impurities may enter the organic compounds and the like contained in the light-emitting element from the outside of the light-emitting device. It is possible to suppress the penetration into metal materials.

[0188] Furthermore, in the light emitting device, Ga or Al and Zn are placed between two layers having a large difference in refractive index, By providing one or more layers of insulating film containing O, it is possible to suppress light reflection due to differences in refractive index. As a result, a light emitting device with high light extraction efficiency can be provided.

[0189] This embodiment mode can be freely combined with other embodiment modes.

[0190] (Embodiment 6) In this embodiment, a modification of the light-emitting device according to one embodiment of the present invention shown in Embodiment 1 will be described. Reveal.

[0191] The light-emitting device according to one embodiment of the present invention employs a substrate in which an organic resin layer and a thin glass layer are bonded together. Therefore, when the thin glass layer is thick enough to have flexibility, it is possible to form a curved surface. It is possible to realize a light emitting device having a light-emitting property and a light emitting device having flexibility.

[0192] <Modification> The light emitting device having a curved surface shown in FIG. 12(D) is made of a first organic resin layer 100a, a first glass layer 101a, a light-emitting element (a first electrode 103, an EL layer 102, and a second electrode 108), The insulating layer 110, the second glass layer 101b, and the second organic resin layer 100b.

[0193] In a modified example, the first glass layer 101a is made of glass having a thickness thin enough to be flexible. For example, the first glass layer 101a may have a thickness of 25 μm or more and 75 μm or less. Cut.

[0194] The other configurations can be the same as those in the configuration example 1 shown in the first embodiment.

[0195] An example of a method for producing the modified example will be described.

[0196] First, a first glass layer 101 is attached to a first organic resin layer 100a having a curved surface by using an adhesive. a is formed (Figure 12(A)).

[0197] Next, a light-emitting element (a first electrode 103, an EL layer 102, and A second electrode 108) is formed.

[0198] Then, a sealing layer 110 is formed on the first glass layer 101a so as to cover the light emitting element. (Figure 12(B)).

[0199] The first glass layer 101a and the second glass layer 101b are then sealed together using a sealant 114. At this time, the space 112 is filled with an inert gas.

[0200] Furthermore, the first organic resin layer 100a and the second organic resin layer 100b are sealed with a sealant (not shown). (not shown) to paste them together (Figure 12(D)).

[0201] Through the above steps, the light emitting device shown as the modified example can be manufactured.

[0202] Next, another example of a method for producing the modified example will be described.

[0203] First, a light emitting element is formed on the first glass layer 101a. A sealing layer 110 is formed on 1a so as to cover the light emitting element (FIG. 13(A)).

[0204] Here, since the first glass layer 101a has flexibility, the first glass layer 101a is in the form of a roll. A roll-to-roll method can be applied to form a light-emitting element on 1a.

[0205] Next, the first glass layer 101a and the second glass layer 101b are sealed together using a sealant 114. The structure shown in FIG. 13(B) is hereinafter referred to as laminate B.

[0206] Finally, the first organic resin layer 100a and the second organic resin layer 100b having a curved surface are sealed. The laminated body B is sealed by bonding using a sealing material 116 (FIG. 13(C)).

[0207] For example, as described in the previous embodiment, the first organic resin layer 100 is pressed by using a pressure roller. a, the first glass layer 101a, the second organic resin layer 100b, and the second glass layer 101b , and the first organic resin layer 100a and the second organic resin layer 100b are bonded to each other. It is possible.

[0208] Through the above steps, the light emitting device shown as the modified example can be manufactured.

[0209] As described above, the light-emitting device described in this embodiment mode has a structure in which the light-emitting element is formed of a support substrate and a sealing substrate. Therefore, a substrate in which an organic resin layer and a glass layer are bonded together is used. This makes it possible to reduce the weight of the light-emitting device. Furthermore, moisture or impurities may enter the organic compounds and the like contained in the light-emitting element from the outside of the light-emitting device. It is possible to suppress the penetration into metal materials.

[0210] Furthermore, the thin glass layer used in this embodiment has a thickness sufficient to provide flexibility. A light emitting device having a curved surface can be realized.

[0211] This embodiment mode can be freely combined with other embodiment modes.

[0212] (Embodiment 7) In this embodiment, a structure in which a converter is built into a light-emitting device according to one embodiment of the present invention will be described with reference to FIG. In the following description, the same parts as those in the above embodiment will be described. In such cases, explanation will be omitted.

[0213] In this embodiment, the converter converts input power into a light emitting device suitable for the specifications. A constant current power supply that converts the current into a constant current and inputs it to the light-emitting device, or a constant voltage power supply that converts the current into a constant voltage suitable for the specifications This refers to a converter circuit that functions as a constant voltage power supply input to a light-emitting device.

[0214] FIG. 14(B) is a cross-sectional view of the light-emitting device shown in FIG. 14(A) between C and D and between E and F. In FIG. 14(A), a part of the configuration shown in FIG. 14(B) is omitted.

[0215] The light emitting device of this embodiment includes a first organic resin layer 100a, a first glass layer 101a, a light emitting The element (the first electrode 103, the EL layer 102, and the second electrode 108), the sealing layer 110, the second The insulating film 100 includes a first glass layer 101b, a second organic resin layer 100b, and a converter 150.

[0216] In FIG. 14(A), the first electrode 103 is electrically connected to the converter 150. The second electrode 108 is electrically connected to the connection electrodes 411a and 411b. The connection electrode 411a is electrically connected to the converter 150. The connection electrode 411b is Electrical connection is made to converter 150 via line 135 .

[0217] In the CD cross section of FIG. 14(B), the first glass layer 10 is formed on the first organic resin layer 100a. 1a is formed, and a first electrode 103 is formed so as to cover the edge of the first glass layer 101a. It is provided.

[0218] A sealant 114 is provided between the first electrode 103 and the second glass layer 101b. A sealant 116 is provided between the first electrode 103 and the second organic resin layer 100b.

[0219] The portion of the first electrode 103 that is connected to the converter 150 is called an extraction electrode 410. a, and the portion of the first electrode 103 that is connected to the connection wiring 135 is taken out as an electrode 410 Let's call it b.

[0220] In FIG. 14B, the connection electrodes 411a and 411b are connected to the extraction electrodes 410a and 410b. The extraction electrode 410a and the connection electrode 411a are on the same plane. The output electrode 410b and the connection electrode 411b are connected to the connection wiring 1. 35. Thus, the first electrode 10 The third and second electrodes 108 are electrically connected to a converter 150, and the light-emitting element is provided with a converter. The current applied to the specification is input by 150. The current is distributed from both ends to the light emitting element. Since the current is input, it reduces uneven brightness and prevents the load from concentrating on a part of the light-emitting element. To be controlled.

[0221] The connection wiring 135 may be a metal wiring or the like. A substrate may also be used.

[0222] In FIG. 14A, the connection wiring 135 passes over the non-light-emitting area of ​​the light-emitting device and is connected to the extraction electrode 410b or 411b is electrically connected to the converter 150. Although not limited to this configuration, the arrangement should be such that the light extraction efficiency of the light emitting device is not reduced. For example, in a light emitting device having a structure in which light is extracted from one side, it is preferable to use a light emitting device that does not emit light. The connecting wires and converter can be placed on the outside of the light emitting device. However, as shown in this embodiment, it is preferable to provide the light emitting element in a non-light emitting region of the light emitting device. By doing so, it is possible to utilize the non-light-emitting region on the first organic resin layer 100a.

[0223] The connection wiring 135 and the converter 150 are sealed with a sealing resin 151 . The sealing resin 151 may be epoxy resin, acrylic resin, silicone resin, phenolic resin, or the like. It can be used.

[0224] The converter 150 is a DC / DC converter. As shown in the E-F cross section of FIG. The converter 150 includes a printed circuit board 140, a first circuit element 130a, a second circuit element 130b, and a a first circuit element 130b, and a third circuit element 130c.

[0225] The printed circuit board 140 is provided with an opening penetrating from the top to the bottom. The light emitting element and the converter are embedded with conductive materials such as copper or solder by plating, etc. 50 is electrically connected.

[0226] To create an opening through the printed circuit board 140, an end mill, punching, sanding, etc. may be used. Mechanical polishing methods using laser blasting, chemical polishing methods using lasers and etching, etc. A combination of the above methods can also be used.

[0227] In this embodiment, the printed circuit board 140 is an insulating substrate with a conductive material applied to one side. When a printed circuit board is used, the printed circuit board, the extraction electrodes, and the connection Since the insulation of the connection surface with the electrode is guaranteed, it is placed on the extraction electrode and the connection electrode. In addition, the printed circuit board 140 is provided with a flexible Flexible printed circuit boards (FPCs) and semi-flexible printed circuit boards that have some flexibility By using a flexible printed circuit board, a flexible light emitting device can be obtained. The converter can be built into a light-emitting device having a curved surface.

[0228] On the printed circuit board 140, a first circuit element 130a, a second circuit element 130b, a third circuit element 130c, and a The first circuit element 130a, the second circuit element 130b, The third circuit element 130c is electrically connected on a printed circuit board and forms a DC / DC converter circuit. The first circuit element 130a, the second circuit element 130b, and the third circuit element Examples of 130c include switches, transistors, capacitance elements, diodes, and inductors. The first circuit element 130a and the second circuit element 130 may be semiconductor chips. b. The third circuit element 130c may be configured as a circuit that functions as a DC / DC converter. The specific circuit configuration is often not mentioned. The components may be provided on a printed circuit board 140, with the remaining components connected externally.

[0229] The first circuit element 130a, the second circuit element 130b, and the third circuit element 130c are printed. Through an opening provided in the substrate 140, the extraction electrode 410a and the connection electrode 411a are electrically connected. Therefore, the light emitting element is electrically connected to the converter 150 so that a current that meets the specifications is supplied to the light emitting element. The other end of the light emitting element is connected to the converter 150 via the connection wiring 135. The elements are electrically connected.

[0230] The converter 150 is provided on the extraction electrode 410a and the connection electrode 411a in the following manner. , the first circuit element 130a, the second circuit element 130b, and the third circuit element 130c. The printed circuit board 140 is attached to the lead electrode 410a and the connection terminal 410b by using an adhesive or the like. The conductive material may be poured into the opening of the printed circuit board 140. The extraction electrode 410a and the connection electrode 411a are connected to the printed circuit board 140 using the This is also fine.

[0231] When the converter 150 is provided on the extraction electrode 410a and the connection electrode 411a, In order to prevent the thickness of the optical device from increasing, the circuit elements of the converter 150 are It may be formed so as to be embedded in the resin layer 100a.

[0232] For example, the second circuit element 130b in FIG. 14B is a circuit element including a printed circuit board 140 and a first organic The resin layer 100a is provided so as to be embedded in an opening provided in the resin layer 100a.

[0233] As shown in FIG. 14C, a concave-convex structure 118a is provided in the light-emitting region of the light-emitting device. In this case, the second circuit element 130b penetrates the opening of the first organic resin layer 100a. The configuration can also be adopted.

[0234] By applying these configurations, the converter can be used as a converter-included configuration or a converter-free configuration. It is possible to realize a light emitting device having the same thickness as the structure.

[0235] The opening in which the second circuit element 130b is embedded is located on the first organic resin layer 100a. The opening is provided in an area where no connection electrode exists. The width and height of the opening can be appropriately adjusted so that the opening is formed between the first organic resin layer 100a and the print substrate. The printed circuit board 140 may be provided in separate processes, or the printed circuit board 140 may be provided in a process After being placed on the first organic resin layer 100a, the first organic resin layer 100a and the printed circuit board 140 are simultaneously It may be provided.

[0236] The openings in the first organic resin layer 100a are formed by using an end mill, sand blasting, etc. Mechanical polishing, chemical polishing such as laser or etching, or a combination of these. The method can be used.

[0237] Also, as shown in FIG. 14(C), the first organic resin layer 100 having the uneven structure 118a When using a, a part of the organic resin material constituting the first organic resin layer 100a is processed. At this time, a part of the organic resin material is During processing, the openings may be formed at the same time.

[0238] In addition, when openings are formed in the printed circuit board 140, the extraction electrode 410a and the connection electrode 4 It is preferable to simultaneously form the opening for 11a, since this reduces the number of work steps.

[0239] As described above, by incorporating a converter in the light emitting device, the input voltage is changed. Even if the device is tuned, it has the function of supplying a stable current suitable for the device, so there is no risk of overcurrent to the light-emitting device. This can prevent the problem of the ink flowing out.

[0240] Note that the converter included in the light emitting device described in this embodiment is not limited to a DC / DC converter. It may be an AC / DC converter that converts AC voltage into DC voltage. When this is used, it can be used by simply applying an AC power supply.

[0241] In addition, the light emitting device of the present embodiment electrically connects one light emitting element to one converter. However, the present invention is not limited to this configuration. In this case, not only the configuration in which the same number of converters as the number of light emitting elements are provided, but also the configuration in which multiple A structure in which the light-emitting elements are electrically connected can be employed.

[0242] In this embodiment, a light emitting device having a bottom emission structure has been described. The present invention can be applied to any of the light emitting devices having the configuration examples shown in the embodiments.

[0243] In one embodiment of the present invention, a converter is built into a light emitting device, so that an external converter is not required. Since a light emitting device that can be used without providing a light emitting element can be provided, the light emitting device can be used in a wide range of applications. spreads.

[0244] In addition, by providing the converter and connection wiring on the non-light-emitting area of ​​the light-emitting device, space can be effectively saved. It can be utilized.

[0245] As described above, the light-emitting device described in this embodiment mode has a structure in which the light-emitting element is formed of a support substrate and a sealing substrate. Therefore, a substrate in which an organic resin layer and a glass layer are bonded together is used. This makes it possible to reduce the weight of the light-emitting device. Furthermore, moisture or impurities may enter the organic compounds and the like contained in the light-emitting element from the outside of the light-emitting device. It is possible to suppress the penetration into metal materials.

[0246] This embodiment mode can be freely combined with other embodiment modes.

[0247] (Embodiment 8) In this embodiment, an example of an EL layer that can be applied to one embodiment of the present invention will be described with reference to FIG. explain.

[0248] The EL layer 102 shown in FIG. 15(A) is provided between a first electrode 103 and a second electrode 108. The first electrode 103 and the second electrode 108 have the same configuration as in the first embodiment. It is possible.

[0249] In this embodiment, the EL layer 102 is formed by stacking a hole injection layer 701, A hole transport layer 702, a layer containing a light-emitting organic compound 703, an electron transport layer 704, and an electron injection layer 705 are formed. The insulating layer 705 is laminated in this order.

[0250] A method for manufacturing the light-emitting element shown in FIG. 15(A) will be described.

[0251] The hole-injection layer 701 is a layer containing a substance with high hole-injection properties. Examples of the oxides include molybdenum oxide, titanium oxide, vanadium oxide, rhenium oxide, Ruthenium oxide, Chromium oxide, Zirconium oxide, Hafnium oxide, Tantalum oxide Metal oxides such as silver oxide, tungsten oxide, and manganese oxide can be used. In addition, phthalocyanine (abbreviation: H 2 Pc), copper(II) phthalocyanine (abbreviation: C Phthalocyanine compounds such as phthalocyanine (uPc) can be used.

[0252] In addition, the low molecular weight organic compound 4,4',4''-tris(N,N-diphenylamino) ) Triphenylamine (abbreviation: TDATA), 4,4',4''-tris[N-(3-methylphenyl) (N-phenylamino)triphenylamine (abbreviation: MTDATA), 4 ,4'-Bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl DPAB, 4,4'-bis(N-{4-[N'-(3-methylphenyl)- N'-phenylamino]phenyl}-N-phenylamino)biphenyl (abbreviation: DNTP D) 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamine N-(9-phenylcarbazol-3-yl)benzene (abbreviation: DPA3B) )-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA1), 3, 6-Bis[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9- Phenylcarbazole (abbreviation: PCzPCA2), 3-[N-(1-naphthyl)-N-( 9-phenylcarbazol-3-yl)amino]-9-phenylcarbazole (abbreviation: P Aromatic amine compounds such as CzPCN1) can be used.

[0253] Furthermore, polymeric compounds (oligomers, dendrimers, polymers, etc.) can also be used. For example, poly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltrifluoroethylene) phenylamine) (abbreviation: PVTPA), poly[N-(4-{N'-[4-(4-diphenyl phenyl-N'-phenylamino}phenyl)methacrylamide (abbreviation: PTPDMA), poly[N,N'-bis(4-butylphenyl)-N,N'-bi Examples of polymer compounds include poly(phenyl)benzidine (abbreviation: Poly-TPD). In addition, poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS), polyaniline / poly(styrenesulfonic acid) (PAni / PS A polymer compound to which an acid such as S) has been added can be used.

[0254] In particular, the hole injection layer 701 is formed by using an organic compound having a high hole transporting property and containing an acceptor substance. It is preferable to use a composite material having a high hole transporting property and an acceptor property. By using a composite material containing As a result, the driving voltage of the light-emitting element can be reduced. The composite material can be formed by co-evaporating a non-reactive material and an acceptor material. By forming the hole injection layer 701 using This makes it easier to inject holes.

[0255] The organic compounds used in the composite materials include aromatic amine compounds, carbazole derivatives, aromatic Various compounds such as aromatic hydrocarbons and polymer compounds (oligomers, dendrimers, polymers, etc.) As the organic compound used for the composite material, a compound having a high hole transporting property can be used. It is preferable that the organic compound is a compound having a low molecular weight. -6 cm 2 Hole transfer above / Vs However, it is preferable that the material has a higher hole transporting property than the electron transporting property. In the following, organic compounds that can be used in the composite material are described. The compounds are specifically listed below.

[0256] Examples of organic compounds that can be used in composite materials include TDATA and MTDATA. , DPAB, DNTPD, DPA3B, PCzPCA1, PCzPCA2, PCzPCN 1,4,4'-Bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB or α-NPD), N,N'-bis(3-methylphenyl)-N,N'-diphenyl 1,1'-biphenyl-4,4'-diamine (TPD), 4-phenyl- 4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP) ) and aromatic amine compounds such as 4,4'-di(N-carbazolyl)biphenyl (abbreviation: C BP), 1,3,5-tris[4-(N-carbazolyl)phenyl]benzene (abbreviation: T CPB), 9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazo CzPA, 9-phenyl-3-[4-(10-phenyl-9-anthryl )phenyl]-9H-carbazole (abbreviation: PCzPA), 1,4-bis[4-(N-phenyl) Carbazole derivatives such as [carbazolyl]phenyl]-2,3,5,6-tetraphenylbenzene A conductor may be used.

[0257] In addition, 2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t- BuDNA), 2-tert-butyl-9,10-di(1-naphthyl)anthracene, 9 ,10-Bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA), 2-t ert-Butyl-9,10-bis(4-phenylphenyl)anthracene (abbreviation: tB uDBA), 9,10-di(2-naphthyl)anthracene (abbreviation: DNA), 9,10- Diphenylanthracene (abbreviation: DPAnth), 2-tert-butylanthracene ( Abbreviation: t-BuAnth), 9,10-bis(4-methyl-1-naphthyl)anthracene (abbreviation: DMNA), 9,10-bis[2-(1-naphthyl)phenyl]-2-tert -Butylanthracene, 9,10-bis[2-(1-naphthyl)phenyl]anthracene , 2,3,6,7-tetramethyl-9,10-di(1-naphthyl)anthracene, etc. An aromatic hydrocarbon compound can be used.

[0258] Furthermore, 2,3,6,7-tetramethyl-9,10-di(2-naphthyl)anthracene, 9,9'-bianthryl, 10,10'-diphenyl-9,9'-bianthryl, 10, 10'-Bis(2-phenylphenyl)-9,9'-bianthryl, 10,10'-bis [(2,3,4,5,6-pentaphenyl)phenyl]-9,9'-bianthryl, an Thracene, tetracene, rubrene, perylene, 2,5,8,11-tetra(tert-bu (ethyl)perylene, pentacene, coronene, 4,4'-bis(2,2-diphenylvinyl) Biphenyl (abbreviation: DPVBi), 9,10-bis[4-(2,2-diphenylvinyl) It is possible to use aromatic hydrocarbon compounds such as diphenylanthracene (DPVPA). can.

[0259] In addition, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroethylene is used as an electron acceptor. F 4 -TCNQ), chloranil, and other organic compounds, as well as transition metals In addition, metal oxides belonging to groups 4 to 8 of the periodic table can be used. Specifically, vanadium oxide, niobium oxide, tantalum oxide, Chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide are electrically Among them, molybdenum oxide is particularly stable in the atmosphere and has a high molecular weight. It is preferred because it has low moisture content and is easy to handle.

[0260] In addition, the above-mentioned polymer compounds such as PVK, PVTPA, PTPDMA, and Poly-TPD A composite material may be formed using the above-mentioned electron acceptor and used for the hole-injection layer 701.

[0261] The hole transport layer 702 is a layer containing a substance having a high hole transporting property. Examples of such compounds include NPB, TPD, BPAFLP, 4,4'-bis[N-(9,9-dimethyl [fluorofluoren-2-yl]-N-phenylamino]biphenyl (abbreviation: DFLDPBi) , 4,4'-bis[N-(spiro-9,9'-bifluoren-2-yl)-N-phenyl An aromatic amine compound such as bisaminobiphenyl (abbreviation: BSPB) can be used. The substances mentioned here are mainly 10 -6 cm 2 A material having a hole mobility of 0.1 V or more. However, any other substance may be used as long as it has a higher hole transporting property than an electron transporting property. The layer containing a substance having a high hole-transporting property is not limited to a single layer, and may be a layer containing the above substance. Two or more layers may be laminated.

[0262] The hole transport layer 702 may also include a carbazole derivative such as CBP, CzPA, or PCzPA. Anthracene derivatives such as t-BuDNA, DNA, and DPAnth may also be used. stomach.

[0263] The hole transport layer 702 may be made of a material such as PVK, PVTPA, PTPDMA, or Poly-TPD. Any polymeric compound can be used.

[0264] The layer 703 containing a light-emitting organic compound is a layer containing a fluorescent compound that emits fluorescence or a phosphor compound that emits phosphorescence. Photoactive compounds can be used.

[0265] Examples of fluorescent compounds that can be used in the layer 703 containing a light-emitting organic compound include As a blue light-emitting material, N,N'-bis[4-(9H-carbazol-9-yl)fluorene] [phenyl]-N,N'-diphenylstilbene-4,4'-diamine (abbreviation: YGA2S) , 4-(9H-carbazol-9-yl)-4'-(10-phenyl-9-anthryl) Triphenylamine (abbreviation: YGAPA), 4-(10-phenyl-9-anthryl)- 4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: P CBAPA) and the like. In addition, N-(9,10-difluorophenyl)propane is an example of a green emitting material. (phenyl-2-anthryl)-N,9-diphenyl-9H-carbazol-3-amine (abbreviation Name: 2PCAPA), N-[9,10-bis(1,1'-biphenyl-2-yl)-2- Anthryl]-N,9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCA BPhA), N-(9,10-diphenyl-2-anthryl)-N,N',N'-triphenyl phenyl-1,4-phenylenediamine (abbreviation: 2DPAPA), N-[9,10-bis( 1,1'-biphenyl-2-yl)-2-anthryl]-N,N',N'-triphenyl -1,4-phenylenediamine (abbreviation: 2DPABPhA), N-[9,10-bis(1 ,1'-biphenyl-2-yl)]-N-[4-(9H-carbazol-9-yl)phenyl N,N,nyl]-N-phenylanthracene-2-amine (abbreviation: 2YGABPhA), 9-triphenylanthracene-9-amine (abbreviation: DPhAPhA) In addition, rubrene, 5,12-bis(1,1'-biphenyl- 4-yl)-6,11-diphenyltetracene (abbreviation: BPT) and the like. As a red light-emitting material, N,N,N',N'-tetrakis(4-methylphenyl) ... 5,11-thracenediamine (abbreviation: p-mPhTD), 7,14-diphenyl-N, N,N',N'-Tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluora Examples include p-mPhAFD and p-mPhAFD.

[0266] Examples of phosphorescent compounds that can be used in the layer 703 containing a light-emitting organic compound include For example, bis[2-(4',6'-difluorophenyl)pyridine] is a blue-emitting material. Zinat-N,C 2’ ]Iridium(III) tetrakis(1-pyrazolyl)borate(abbreviation Name: FIr6), Bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2 ’ ]iridium(III) picolinate (abbreviation: FIrpic), bis{2-[3',5 '-Bis(trifluoromethyl)phenyl]pyridinato-N,C 2’}Iridium (II I) Picolinate (abbreviation: Ir(CF 3 ppy) 2 (pic)), bis[2-(4',6 '-Difluorophenyl)pyridinato-N,C 2’ ]Iridium(III) acetylacetone Tonato (abbreviation: FIr(acac)) and other materials that emit green light are also available. Tris(2-phenylpyridinato-N,C 2’ ) Iridium(III) (abbreviation: Ir (ppy) 3 ), Bis(2-phenylpyridinato-N,C 2’ ) Iridium(III) A Cetylacetonate (abbreviation: Ir(ppy) 2 (acac)), bis(1,2-diphenyl Iridium(III) acetylacetonate (abbreviation: I r(pbi) 2 (acac)), bis(benzo[h]quinolinato)iridium(III) Acetylacetonate (abbreviation: Ir(bzq) 2(acac)), Tris(benzo[h] Quinolinato)iridium(III) (abbreviation: Ir(bzq) 3 ) and others. As a yellow light-emitting material, bis(2,4-diphenyl-1,3-oxazolato-N,C 2’ ) Iridium(III) acetylacetonate (abbreviation: Ir(dpo) 2 (acac )), bis[2-(4'-perfluorophenylphenyl)pyridinato]iridium(I II) Acetylacetonate (abbreviation: Ir(p-PF-ph) 2 (acac)), Bis( 2-Phenylbenzothiazolato-N,C 2’ ) Iridium(III) acetylacetoner Ir(bt) 2 (acac)), (acetylacetonato)bis[2,3-bis (4-fluorophenyl)-5-methylpyrazinato]iridium(III) (abbreviation: Ir (Fdppr-Me) 2 (acac)), (acetylacetonato)bis{2-(4-meth {D(xyphenyl)-3,5-dimethylpyrazinate}iridium(III) (abbreviation: Ir(d mmoppr) 2 (acac)) and other materials that emit orange light. Tris(2-phenylquinolinato-N,C 2’ ) Iridium(III) (abbreviation: Ir(pq ) 3 ), Bis(2-phenylquinolinato-N,C 2’ ) Iridium(III) acetylated Setanato (abbreviation: Ir(pq) 2 (acac)), (acetylacetonato)bis(3, 5-Dimethyl-2-phenylpyrazinato)iridium(III) (abbreviation: Ir(mppr -Me) 2(acac)), (acetylacetonato)bis(5-isopropyl-3-methyl Ir(mppr-iPr) 2 (acac)) and the like. In addition, bis[2-(2' -Benzo[4,5-α]thienyl)pyridinato-N,C 3’ ]Iridium(III)acetate Ir(btp) 2 (acac)), bis(1-phenylisoxid Norinato-N,C 2’ ) Iridium(III) acetylacetonate (abbreviation: Ir(pi q) 2 (acac)), (acetylacetonato)bis[2,3-bis(4-fluorophenyl) Iridium(III) (abbreviation: Ir(Fdpq) 2 (acac) ), (acetylacetonato)bis(2,3,5-triphenylpyrazinate)iridium ( III) (Abbreviation: Ir(tppr) 2 (acac)), (dipivaloylmethanato)bis( 2,3,5-triphenylpyrazinate)iridium(III) (abbreviation: Ir(tppr) 2 (dpm)), 2,3,7,8,12,13,17,18-octaethyl-21H,2 Examples include organometallic complexes such as 3H-porphyrin platinum(II) (abbreviation: PtOEP). Also, tris(acetylacetonato)(monophenanthroline)terbium(III) ( Abbreviation: Tb(acac) 3 (Phen)), Tris(1,3-diphenyl-1,3-propanediol) Pandionato)(monophenanthroline)europium(III) (abbreviation: Eu(DBM ) 3 (Phen)), tris[1-(2-thenoyl)-3,3,3-trifluoroacetonitrile] Nato](monophenanthroline)europium(III) (abbreviation: Eu(TTA) 3 (P Rare earth metal complexes such as phenylene fluoride (phenylene fluoride) are capable of emitting light from rare earth metal ions (electrons with different multiplicities). transition), it can be used as a phosphorescent compound.

[0267] The layer 703 containing a light-emitting organic compound may be formed by the above-mentioned light-emitting organic compound (guess The host material may be dispersed in another substance (host material). Various materials can be used, and the lowest unoccupied molecular orbital (LUMO) level is higher than that of luminescent materials. It is preferable to use a substance having a high molecular weight and a low highest occupied molecular orbital level (HOMO level).

[0268] Specifically, the host material is tris(8-quinolinolato)aluminum(III). (abbreviation: Alq), tris(4-methyl-8-quinolinolato)aluminum(III) ( Abbreviation: Almq 3 ), bis(10-hydroxybenzo[h]quinolinato)beryllium(I I) (Abbreviation: BeBq 2 ), bis(2-methyl-8-quinolinolato)(4-phenylphenyl) Bis(8-quinolinolato)aluminum(III) (abbreviation: BAlq), bis(8-quinolinolato)zinc ( II) (abbreviation: Znq), bis[2-(2-benzoxazolyl)phenolato]zinc (I I) (abbreviation: ZnPBO), bis[2-(2-benzothiazolyl)phenolato]zinc (I I) (abbreviation: ZnBTZ) and other metal complexes, 2-(4-biphenylyl)-5-(4-te rt-Butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 1,3-Bis(phenyl) S[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl ]benzene (abbreviation: OXD-7), 3-(4-biphenylyl)-4-phenyl-5-(4 -tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 2,2' ,2''-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzoimide dazole (abbreviation: TPBI), Bathophenanthroline (abbreviation: BPhen), Vasocutan Heterocyclic compounds such as proine (abbreviation: BCP) and 9-[4-(10-phenyl-9-a 3,6-diphenyl- 9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation :DPCzPA), 9,10-bis(3,5-diphenylphenyl)anthracene (abbreviation :DPPA), 9,10-di(2-naphthyl)anthracene (abbreviation:DNA), 2-te rt-Butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuDNA), 9,9'-Bianthryl (abbreviation: BANT), 9,9'-(stilbene-3,3'-diyl) Diphenanthrene (DPNS), 9,9'-(stilbene-4,4'-diyl) ) Diphenanthrene (abbreviation: DPNS2), 3,3',3''-(benzene-1,3,5 -triyl)tripylene (abbreviation: TPB3), 9,10-diphenylanthracene (abbreviation :DPAnth), 6,12-dimethoxy-5,11-diphenylchrysene and other condensed aromatic Aromatic compounds, N,N-diphenyl-9-[4-(10-phenyl-9-anthryl)phenyl] 4-(10-phenyl)-9H-carbazol-3-amine (abbreviation: CzA1PA), N,9-diphenyl-9-anthryl)triphenylamine (abbreviation: DPhPA) N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole-3- Amine (abbreviation: PCAPA), N,9-diphenyl-N-{4-[4-(10-phenyl -9-Anthryl)phenyl]phenyl}-9H-carbazol-3-amine (abbreviation: P CAPBA), N-(9,10-diphenyl-2-anthryl)-N,9-diphenyl- 9H-Carbazole-3-amine (abbreviation: 2PCAPA), NPB (or α-NPD) Aromatic amine compounds such as TPD, DFLDPBi, and BSPB can be used. do.

[0269] In addition, multiple host materials can be used. For example, rubrene can be used to suppress crystallization. A substance that suppresses crystallization, such as fluorine, may be further added. In order to make the transfer more efficient, NPB, Alq or the like may be further added.

[0270] By dispersing the guest material in the host material, a light-emitting organic compound can be The crystallization of the layer 703 can be suppressed. This can suppress the quenching.

[0271] Further, a polymer compound can be used as the layer 703 containing a light-emitting organic compound. Specifically, poly(9,9-dioctylfluorene-2,7-diphenylphosphine) is used as a blue light-emitting material. Poly[(9,9-dioctylfluorene-2,7-diyl)- co-(2,5-dimethoxybenzene-1,4-diyl)] (abbreviation: PF-DMOP), Poly{(9,9-dioctylfluorene-2,7-diyl)-co-[N,N'-di-( p-butylphenyl)-1,4-diaminobenzene]} (abbreviation: TAB-PFH) In addition, poly(p-phenylene vinylene) (abbreviation: PPV), poly[(9,9-dihexylfluorene-2,7-diyl)-alt-co- (benzo[2,1,3]thiadiazole-4,7-diyl)] (abbreviation: PFBT), poly [(9,9-dioctyl-2,7-divinylenefluorenylene)-alt-co-(2- Methoxy-5-(2-ethylhexyloxy)-1,4-phenylene). In addition, poly[2-methoxy-5-(2'-ethylhexyl) (abbreviation: MEH-PPV), poly(3-butyl thiophene-2,5-diyl) (abbreviation: R4-PAT), poly{[9,9-dihexyl- 2,7-Bis(1-cyanovinylene)fluorenylene]-alt-co-[2,5-bis (N,N'-diphenylamino)-1,4-phenylene]}, poly{[2-methoxy-5 -(2-ethylhexyloxy)-1,4-bis(1-cyanovinylenephenylene)]-a lt-co-[2,5-bis(N,N'-diphenylamino)-1,4-phenylene]} (abbreviation: CN-PPV-DPD) and others.

[0272] In addition, a plurality of layers containing a light-emitting organic compound are provided, and each layer emits a different light color. By doing so, it is possible to obtain light emission of a desired color from the light-emitting element as a whole. In a light-emitting element having two layers containing an organic compound, the first layer containing a light-emitting organic compound The emission color of the first layer and the emission color of the second layer containing a light-emitting organic compound are made to have a complementary color relationship. It is also possible to obtain a light emitting element that emits white light as a whole. refers to the relationship between colors that become achromatic when mixed. In other words, it is a color that emits colors that are complementary to each other. By mixing the light from these materials, white light can be obtained. The same applies to the case of a light emitting element having three or more layers containing a compound.

[0273] The electron transport layer 704 is a layer containing a substance having a high electron transport property. Examples of the aluminum compounds include tris(8-quinolinolato)aluminum (Alq), tris(4 -Methyl-8-quinolinolato)aluminum (abbreviation: Almq 3 ), bis(10-hydro Benzo[h]quinolinato) beryllium (abbreviation: BeBq 2 ), bis(2-methyl-8 -quinolinolato)(4-phenylphenolato)aluminum (abbreviation: BAlq), Metal complexes having a quinoline or benzoquinoline skeleton are also included. [2-(2-hydroxyphenyl)benzoxazolato]zinc (abbreviation: Zn(BOX) 2 ), bis[2-(2-hydroxyphenyl)benzothiazolato]zinc (abbreviation: Zn(BT Z) 2 Metal complexes having oxazole or thiazole ligands such as In addition to metal complexes, 2-(4-biphenylyl)-5-(4-tert -butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD) and 1,3-bis [5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl] Benzene (abbreviation: OXD-7), 3-(4-biphenylyl)-4-phenyl-5-(4- tert-Butylphenyl)-1,2,4-triazole (abbreviation: TAZ), Bathofena Also use phenantrol (abbreviated as BPhen) and vasocuproine (abbreviated as BCP). The substances mentioned here are mainly 10 -6 cm 2 / Vs or higher electron mobility The electron transport layer is not limited to a single layer, but may be two or more layers made of the above-mentioned materials. It may also be a laminate.

[0274] The electron injection layer 705 is a layer containing a substance with a high electron injection property. fluoride, cesium, calcium, lithium fluoride, cesium fluoride, calcium fluoride, Uses alkali metals, alkaline earth metals, or compounds thereof, such as lithium oxide, etc. Also, rare earth metal compounds such as erbium fluoride can be used. Moreover, the above-mentioned substances constituting the electron transport layer 704 can also be used.

[0275] The hole injection layer 701, the hole transport layer 702, and the layer 70 containing a light-emitting organic compound 3. The electron transport layer 704 and the electron injection layer 705 are formed by deposition (including vacuum deposition), The layer can be formed by an ink jet method, a coating method, or the like.

[0276] As shown in FIG. 15B, the EL layer 102 is formed by a first electrode 103 and a second electrode 108. In this case, the first EL layer 800 and the second EL layer It is preferable to provide a charge generating layer 803 between the layer 801 and the charge generating layer 803. The charge generating layer 803 can be formed of the above-mentioned composite material. It may have a laminated structure with a layer made of another material. In this case, the layer made of another material may be an electric A layer containing a substance having electron donating properties and a substance having high electron transport properties, a layer made of a transparent conductive film, or the like is used. A light-emitting device having such a structure can avoid problems such as energy transfer and quenching. This makes it difficult for this phenomenon to occur, and the range of materials that can be selected is expanded, allowing for the development of light emission that combines high luminous efficiency with a long lifespan. It is easy to fabricate a device. In addition, it is possible to obtain phosphorescence from one EL layer and fluorescence from the other. This structure can be used in combination with the above-mentioned EL layer structure.

[0277] In addition, by making the emission color of each EL layer different, the light-emitting device as a whole can have a desired color. For example, in a light-emitting element having two EL layers, the first By making the emission color of the first EL layer and the emission color of the second EL layer complementary to each other, It is also possible to obtain a light-emitting device that emits white light as a whole. The same applies to the case of a light emitting element having a

[0278] As shown in FIG. 15C, the EL layer 102 is formed by a first electrode 103 and a second electrode 108. Between them, there are a hole injection layer 701, a hole transport layer 702, a layer containing a light-emitting organic compound 703, and an electron The transport layer 704, the electron injection buffer layer 706, the electron relay layer 707, and the second electrode 10 8 may have a composite layer 708 in contact with the substrate 702 .

[0279] By providing the composite material layer 708 in contact with the second electrode 108, it is possible to form a thin film by using a sputtering method. Therefore, when the second electrode 108 is formed, damage to the EL layer 102 can be reduced. The composite material layer 708 is preferably made of the above-mentioned organic compound having a high hole transporting property. Composite materials containing receptor substances can be used.

[0280] Furthermore, by providing an electron injection buffer layer 706, the composite material layer 708 and the electron transport layer 7 Since the injection barrier between the composite material layer 708 and the electrode 704 can be reduced, the electrons generated in the composite material layer 708 can be injected into the electrode 704. The electron transport layer 704 can be easily injected.

[0281] The electron injection buffer layer 706 may include an element selected from the group consisting of alkali metals, alkaline earth metals, rare earth metals, and and their compounds (alkali metal compounds (oxides such as lithium oxide, halides, carbonates, etc.) (including carbonates such as lithium and cesium carbonate), alkaline earth metal compounds (oxides, halides, etc.) compounds of rare earth metals (including oxides, halides, carbonates) It is possible to use a substance having a high electron injection property such as tetrahydrofuran (TFA) or the like.

[0282] In addition, the electron injection buffer layer 706 is formed by containing a material having high electron transport properties and a donor material. In the case where the compound is formed, the mass ratio of the compound to the substance having high electron transport properties is 0.001 or more and 0.1 or less. It is preferable to add the donor substance in a ratio of 1:1. Alkali metals, alkaline earth metals, rare earth metals, and their compounds (alkali metal compounds ( Includes oxides such as lithium oxide, halides, and carbonates such as lithium carbonate and cesium carbonate. ), alkaline earth metal compounds (including oxides, halides, and carbonates), or rare earth metals In addition to compounds of the group (including oxides, halides, and carbonates), tetrathianaphthacene (abbreviated Organic compounds such as TTN, nickelocene, and decamethylnickelocene can also be used. As the substance having a high electron transporting property, the same material as the material of the electron transporting layer 704 described above can be used. The present invention can be formed using a variety of materials.

[0283] Furthermore, an electron relay layer 707 is provided between the electron injection buffer layer 706 and the composite material layer 708. The electron relay layer 707 is not necessarily required, but may be formed as an electron relay layer. By providing the electron relay layer 707 with high transportability, electrons can be transferred to the electron injection buffer layer 706. This makes it possible to send it quickly.

[0284] An electron relay layer 707 is sandwiched between the composite layer 708 and the electron injection buffer layer 706. The structure includes an acceptor material contained in a composite material layer 708 and an electron injection buffer layer 70 The structure is such that it is difficult for the donor substance contained in 6 to interact with each other and inhibit each other's functions. Therefore, the increase in the driving voltage can be suppressed.

[0285] The electron relay layer 707 contains a material with high electron transport properties, and the LUM of the material with high electron transport properties The O level is determined by the LUMO level of the acceptor material contained in the composite material layer 708 and the electron transport The electron transport layer 704 is formed so as to be between the LUMO level of the material having high electron transport properties contained in the layer 704 and the LUMO level of the material having high electron transport properties. In addition, when the electron relay layer 707 contains a donor material, the donor equivalent of the donor material is The LUMO level of the acceptor material contained in the composite material layer 708 and the LUMO level of the electron transport layer 70 The LUMO level of the highly electron-transporting material contained in 4 is between the LUMO level of the highly electron-transporting material contained in 4. The value of the energy level is the L The UMO level is -5.0 eV or more, preferably -5.0 eV or more and -3.0 eV or less. good.

[0286] The electron relay layer 707 may contain a phthalocyanine-based material or a material having a high electron transporting property. It is preferable to use a metal complex having a metal-oxygen bond and an aromatic ligand.

[0287] The phthalocyanine-based material contained in the electron relay layer 707 is specifically CuPc, S nPc (Phthalocyanine tin(II) complex), ZnPc (Phthalocyanine zinc complex), CoPc (Cobal t(II)phthalocyanine, β-form), FePc(Phthal ocyanine Iron) and PhO-VOPc(Vanadyl 2,9,16, 23-tetraphenoxy-29H,31H-phthalocyanine) It is preferable to use either one.

[0288] The metal complexes having a metal-oxygen bond and an aromatic ligand contained in the electron relay layer 707 include It is preferable to use a metal complex having a metal-oxygen double bond. In this case, the molecule has acceptor properties (the ability to easily accept electrons), and electron transfer (donation and receipt) is facilitated. In addition, metal complexes with metal-oxygen double bonds are considered to be stable. Therefore, by using a metal complex having a metal-oxygen double bond, it is possible to obtain a light-emitting element having a low This makes it possible to drive the device more stably with a voltage.

[0289] As the metal complex having a metal-oxygen bond and an aromatic ligand, a phthalocyanine-based material is preferred. Specifically, VOPc (Vanadyl phthalocyanine), SnO Pc(Phthalocyanine tin(IV) oxide complex) and TiOPc (Phthalocyanine titanium oxide co mplex) is a molecular structure in which the metal-oxygen double bond acts on other molecules. This is preferred because it is easy to do and has high acceptor properties.

[0290] As the above-mentioned phthalocyanine-based material, those having a phenoxy group are preferable. Specifically, a phthalocyanine derivative having a phenoxy group, such as PhO-VOPc, is preferred. The phthalocyanine derivative having a phenoxy group is soluble in a solvent. It has the advantage of being easy to handle when forming a light-emitting element. In addition, since it is soluble in a solvent, This has the advantage that maintenance of the device used for film formation becomes easier.

[0291] The electron relay layer 707 may further include a donor material. Alkali metals, alkaline earth metals, rare earth metals and their compounds (alkali metal compounds (Oxides such as lithium oxide, halides, carbonates such as lithium carbonate and cesium carbonate) ), alkaline earth metal compounds (including oxides, halides, and carbonates), or rare earth Compounds of metals (including oxides, halides, and carbonates), as well as tetrathianaphthacene (abbreviation: TTN), nickelocene, decamethylnickelocene and other organic compounds are used. By including these donor substances in the electron relay layer 707, This facilitates movement, and enables the light-emitting element to be driven at a lower voltage.

[0292] When the electron-relay layer 707 contains a donor substance, the above-mentioned In addition to the material, the acceptor level of the acceptor substance contained in the composite material layer 708 is Materials with high LUMO levels can be used. Specific energy levels are LUMO level is in the range of -5.0 eV or more, preferably -5.0 eV or more and -3.0 eV or less. It is preferable to use a substance having a structure such as a perylene derivative. Nitrogen-containing condensed aromatic compounds are examples of nitrogen-containing condensed aromatic compounds. Therefore, it is a preferable material to be used for forming the electron relay layer 707. do.

[0293] Specific examples of perylene derivatives include 3,4,9,10-perylenetetracarboxylic dianhydride. (abbreviation: PTCDA), 3,4,9,10-perylenetetracarboxylic bis(benzyl)benzene Zoimidazole (abbreviation: PTCBI), N,N'-dioctyl-3,4,9,10-periodic PTCDI-CH, N,N'-dihexyl 3,4,9,10-perylenetetracarboxylic diimide (abbreviation: Hex PTC) Can be obtained.

[0294] Specific examples of nitrogen-containing condensed aromatic compounds include pyrazino[2,3-f][1,10] Phenanthroline-2,3-dicarbonitrile (PPDN), 2,3,6,7,1 0,11-Hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviation :HAT(CN) 6 ), 2,3-diphenylpyrido[2,3-b]pyrazine (abbreviation: 2P YPR), 2,3-bis(4-fluorophenyl)pyrido[2,3-b]pyrazine (abbreviation :F2PYPR) etc.

[0295] In addition, 7,7,8,8-tetracyanoquinodimethane (TCNQ), 1,4, 5,8-Naphthalenetetracarboxylic dianhydride (abbreviation: NTCDA), Perfluorinated phthalocyanine, copper hexadecafluorophthalocyanine (abbreviation: F 16 CuPc), N,N'-Bi S(2,2,3,3,4,4,5,5,6,6,7,7,8,8,8-Pentadecafluoro (abbreviation: NTCD)-1,4,5,8-naphthalenetetracarboxylic acid diimide I-C8F), 3',4'-dibutyl-5,5''-bis(dicyanomethylene)-5,5 ''-Dihydro-2,2':5',2''-terthiophene) (abbreviation: DCMT), meta Nonofullerenes (e.g., [6,6]-phenyl C 61 Butyric acid methyl ester, etc. This can be done.

[0296] When the electron-relay layer 707 contains a donor substance, the donor substance is a substance having high electron transport properties. The electron relay layer 707 may be formed by a method such as co-evaporation with an insulating material.

[0297] A hole injection layer 701, a hole transport layer 702, a layer containing a light-emitting organic compound 703, and an electron transport layer The transfer layer 704 may be formed using the above-mentioned materials.

[0298] In this manner, the EL layer 102 of this embodiment can be manufactured.

[0299] This embodiment mode can be freely combined with other embodiment modes.

[0300] (Embodiment 9) In this embodiment, an example of a lighting device completed using a light-emitting device according to one embodiment of the present invention will be described. This will be explained with reference to FIG.

[0301] According to one embodiment of the present invention, a lighting device having a light-emitting portion with a curved surface can be achieved.

[0302] In addition, according to one embodiment of the present invention, a lighting device having a see-through light-emitting portion can be realized. do.

[0303] In addition, one embodiment of the present invention can be applied to automobile lighting, for example, dashboard lighting. Lighting can also be installed on the windows, windshield, ceiling, etc.

[0304] FIG. 21A illustrates an indoor lighting device 901 and a table lamp to which one embodiment of the present invention is applied. The light-emitting device can be made large-area, so it can be used as a large-area lighting device. In addition, it can also be used as a roll-type lighting device 902.

[0305] Another example of the lighting device is shown in FIG. 21(B). The table lighting device shown in FIG. 21(B) has a lighting unit 9. The lighting unit 9501 includes a light source 9502, a support 9503, a support stand 9505, and the like. In this way, in one embodiment of the present invention, a lighting device having a curved surface or a flexible In this way, a lighting device having a flexibly bendable lighting portion can be realized. By using a light-emitting device that can be used as a lighting device, the degree of freedom in designing the lighting device is improved. In addition, the lighting device can also be used in places with curved surfaces, such as the ceiling and dashboard of an automobile. It is possible to install the following.

[0306] This embodiment mode can be freely combined with other embodiment modes. EXAMPLES

[0307] In this example, gallium (Ga), zinc (Zn), and oxygen, which can be used in one embodiment of the present invention, are used. An example of a film containing (O) (hereinafter, a GZO film) will be described with reference to FIGS.

[0308] <Sample Preparation> First, the GZO film prepared in this example will be described. There are three types, as shown in Figure 1.

[0309] [Table 1]

[0310] In all the configurations of this embodiment, the distance between the substrate and the target is 110 mm. , pressure 0.8 Pa, direct current (DC) power supply 200 W, oxygen atmosphere, substrate heating temperature 200 °C The film was formed by sputtering under the following conditions.

[0311] As a configuration example 1, a Ga-Zn-O metal oxide target (Ga 2 O 3 :ZnO=1:5 [molar ratio]) was used to form a 100 nm thick GZO film.

[0312] As a second example, a Ga-Zn-O metal oxide target (Ga 2 O 3 :ZnO=1:1 [molar ratio]) was used to form a 100 nm thick GZO film.

[0313] As a third example, a Ga-Zn-O metal oxide target (Ga 2 O 3 :ZnO=5:1 [molar ratio]) was used to form a 100 nm thick GZO film.

[0314] <Refractive index measurement> Next, the refractive indexes of the configuration examples 1 to 3 were measured. The refractive index was determined using the Lithography.

[0315] The refractive indexes of the configuration examples 1 to 3 are shown in FIG. 16. In FIG. 16, the horizontal axis represents wavelength (nm). The vertical axis indicates the refractive index.

[0316] The refractive indexes of the configuration examples 1 to 3 are in the wavelength region of 400 nm or more and 800 nm or less (hereinafter, Almost no wavelength dependency was observed in the visible light region.

[0317] As can be seen from FIG. 16, in the visible light region, the composition example 1 (containing a large proportion of ZnO) The target is the same as in Example 3 (Ga 2 O 3 (target with a high proportion of , high refractive index.

[0318] From the above results, the Ga in the Ga-Zn-O metal oxide target 2 O 3 and ZnO It was suggested that the refractive index of the resulting GZO film could be changed by changing the ratio of

[0319] <Transmittance measurement> Next, the transmittance of each of the configuration examples 1 to 3 was measured. was used to obtain the transmittance values.

[0320] The transmittance of the configuration examples 1 to 3 is shown in FIG. 17. In FIG. 17, the horizontal axis represents the wavelength (nm). The vertical axis indicates the transmittance.

[0321] The transmittance of each of the configuration examples 1 to 3 is very high, at 75% or more, in the wavelength region of 400 nm or more. It was.

[0322] These results demonstrate that the GZO film has extremely high transparency to visible light.

[0323] As can be seen from this example, the film containing Ga, Zn, and O has very low transparency to visible light. The refractive index of the resulting film changes significantly by changing the ratio of Ga and Zn. Therefore, it is clear that the present invention can be suitably used as a functional layer. I did. EXAMPLES

[0324] In this example, a film containing Ga, Zn, and O (hereinafter, GZO) that can be applied to one embodiment of the present invention is Another example of the film will be described with reference to FIGS.

[0325] <Sample Preparation> First, the GZO film prepared in this example will be described. There are 12 types, as shown in Figure 2.

[0326] [Table 2]

[0327] In all configuration examples of this embodiment, the distance between the substrate and the target is 110 mm. The deposition was performed by sputtering under the conditions of a pressure of 0.8 Pa and a direct current (DC) power of 200 W. Ta.

[0328] As a configuration example A-1, a Ga-Zn-O metal oxide target (Ga 2 O 3 :ZnO=1 :5 [molar ratio]) and argon and oxygen (flow ratio of argon:oxygen = 7: 3) A GZO film with a thickness of 250 nm was formed at room temperature in a mixed atmosphere.

[0329] As a configuration example A-2, a Ga-Zn-O metal oxide target (Ga 2 O 3 :ZnO=1 A 90 nm thick GZO film was formed at room temperature in an oxygen atmosphere using 1:5 molar ratio. Ta.

[0330] As a configuration example A-3, a Ga-Zn-O metal oxide target (Ga 2 O 3 :ZnO=1 :5 [molar ratio]) and argon and oxygen (flow ratio of argon:oxygen = 7: 3) A 200 nm thick GZO film was formed in a mixed atmosphere with a substrate heating temperature of 200°C. .

[0331] As a configuration example A-4, a Ga-Zn-O metal oxide target (Ga 2 O 3 :ZnO=1 :5 [molar ratio]) in an oxygen atmosphere and at a substrate heating temperature of 200°C. A 0 nm thick GZO film was formed.

[0332] As a configuration example B-1, a Ga-Zn-O metal oxide target (Ga 2 O 3 :ZnO=1 :1 [molar ratio]) and argon and oxygen (flow ratio of argon:oxygen = 7: 3) A GZO film with a thickness of 180 nm was formed at room temperature in a mixed atmosphere.

[0333] As the configuration example B-2, a Ga-Zn-O metal oxide target (Ga 2 O 3 :ZnO=1 :1 [molar ratio]) was used to form a 50 nm thick GZO film at room temperature in an oxygen atmosphere. Ta.

[0334] In the configuration example B-3, a Ga-Zn-O metal oxide target (Ga 2 O 3 :ZnO=1: 1 [molar ratio]) and argon and oxygen (flow ratio of argon:oxygen = 7:3 ) A GZO film with a thickness of 150 nm was formed in a mixed atmosphere with a substrate heating temperature of 200°C.

[0335] As a configuration example B-4, a Ga-Zn-O metal oxide target (Ga 2 O 3 :ZnO=1 :1 [molar ratio]) in an oxygen atmosphere at a substrate heating temperature of 200°C. A GZO film with a thickness of nm was formed.

[0336] As the configuration example C-1, a Ga-Zn-O metal oxide target (Ga 2 O 3 :ZnO=5 :1 [molar ratio]) and argon and oxygen (flow ratio of argon:oxygen = 7: 3) A GZO film with a thickness of 160 nm was formed at room temperature in a mixed atmosphere.

[0337] As the configuration example C-2, a Ga-Zn-O metal oxide target (Ga 2 O 3 :ZnO=5 :1 [molar ratio]) was used to form a 50 nm thick GZO film at room temperature in an oxygen atmosphere. Ta.

[0338] As the configuration example C-3, a Ga-Zn-O metal oxide target (Ga 2 O 3 :ZnO=5 :1 [molar ratio]) and argon and oxygen (flow ratio of argon:oxygen = 7: 3) A GZO film with a thickness of 160 nm was formed under the conditions of a mixed atmosphere and a substrate heating temperature of 200°C. .

[0339] As the configuration example C-4, a Ga-Zn-O metal oxide target (Ga 2 O 3 :ZnO=5 :1 [molar ratio]) in an oxygen atmosphere at a substrate heating temperature of 200°C. A GZO film with a thickness of nm was formed.

[0340] <Refractive index measurement> Next, configuration examples A-1 to A-4, configuration examples B-1 to B-4, and configuration example C- The refractive indexes of the configuration examples C-1 to C-4 were measured.

[0341] The refractive index was measured using the same method as in Example 1.

[0342] The refractive indexes of the configuration examples A-1 to A-4 are shown in FIG. The refractive index of the configuration example C-1 to the configuration example C-4 is shown in FIG. 8 to 20, the horizontal axis indicates wavelength (nm) and the vertical axis indicates refractive index.

[0343] The refractive index of the example structure produced in this embodiment shows almost no wavelength dependency in the visible light region. I couldn't.

[0344] From the results of this example, by changing the ratio of Ga and Zn and the film formation atmosphere, It was found that the refractive index of the resulting GZO film changes. For example, in the visible light region, It was suggested that it is possible to form a GZO film having a refractive index in the range of 1.7 to 2.0. [Explanation of symbols]

[0345] 100a First organic resin layer 100b Second organic resin layer 101a first glass layer 101b Second Glass Layer 102 EL layer 103 First electrode 107 Second electrode 108 Second electrode 110 Sealing layer 112 Space 114 Sealing material 115 Filling material 116 Sealing material 118a Concave and Convex Structure 118b Concave and Convex Structure 120a First protective layer 120b Second protective layer 122a Concave and convex structure 122b Concave and convex structure 124a first resin layer 124b Second resin layer 130a First circuit element 130b Second circuit element 130c third circuit element 135 Connection Wiring 138 Insulating Film 140 Printed Circuit Board 150 Converter 151 Sealing resin 410a Extraction electrode 410b Extraction electrode 411 Connection electrode 411a Connection electrode 411b Connection electrode 701 Hole injection layer 702 Hole transport layer 703 Layer containing luminescent organic compound 704 Electron transport layer 705 Electron injection layer 706 Electron injection buffer layer 707 Electronic Relay Layer 708 Composite layer 800 1st EL layer 801 Second EL layer 803 Charge generation layer 901 Lighting equipment 902 Lighting equipment 903 Table Lamp 9501 Lighting Department 9503 Post 9505 Support stand

Claims

1. An organic resin film having a plurality of recesses and a plurality of protrusions; a light-emitting element disposed on the organic resin film, The light emitting element includes a first electrode having a region in contact with an upper surface of the organic resin film; an electroluminescent layer having a region located above the first electrode; a second electrode located above the EL layer; When viewed in cross section, the organic resin film has the plurality of recesses and the plurality of protrusions toward an emission surface of the light emitting element, the light-emitting element has a region overlapping with at least one of the plurality of recesses and a region overlapping with at least one of the plurality of protrusions, the organic resin film has a region that does not have the plurality of recesses and the plurality of protrusions, and has an opening in the region; The first electrode overlaps with the opening.

2. An organic resin film having a plurality of recesses and a plurality of protrusions; a light-emitting element disposed on the organic resin film, The light emitting element includes a first electrode having a region in contact with an upper surface of the organic resin film; an electroluminescent layer having a region located above the first electrode; a second electrode located above the EL layer; When viewed in cross section, the organic resin film has the plurality of recesses and the plurality of protrusions toward an emission surface of the light emitting element, the light-emitting element has a region overlapping with at least one of the plurality of recesses and a region overlapping with at least one of the plurality of protrusions, the organic resin film has a region that does not have the plurality of recesses and the plurality of protrusions, and has an opening in the region; the first electrode has an overlap with the opening; the first electrode has a region that does not overlap the EL layer and overlaps with at least one of the plurality of recesses or the plurality of protrusions, A light emitting device, wherein the maximum height of the plurality of protrusions is 0.1 μm or more and 100 μm or less in a cross-sectional view.

Images