Thermoelectric element

Abstract

A thermoelectric element according to one embodiment of the present invention includes a first substrate, an insulating layer disposed on the one first substrate, a first electrode portion disposed on the insulating layer, a first terminal electrode and a second terminal electrode disposed on the insulating layer and protruding from the first electrode portion toward a first outer side of the first substrate, a semiconductor structure disposed on the first electrode portion, a second electrode portion disposed on the semiconductor structure, and a second substrate portion disposed on the second electrode portion, the second substrate portion including a plurality of second substrates spaced apart from each other, the first electrode portion including a plurality of electrode groups vertically overlapping with each of the plurality of second substrates, and a first connecting electrode connecting two different electrode groups among the plurality of electrode groups, a long side of the first connecting electrode being longer than a long side of a first electrode included in the plurality of electrode groups, and at least a portion of the first connecting electrode being disposed so as not to vertically overlap with the plurality of second substrates.

Description

Technical Field

[0001] The present invention relates to a thermoelectric element, and more particularly to the structure of the electrode portion of a thermoelectric element.

Background Art

[0002] The thermoelectric phenomenon is a phenomenon generated by the movement of electrons and holes inside a material, and means a direct energy conversion between heat and electricity.

[0003] A thermoelectric element is a general term for elements that utilize the thermoelectric phenomenon, and has a structure in which a P-type thermoelectric material and an N-type thermoelectric material are joined between metal electrodes to form a PN junction pair.

[0004] Thermoelectric elements can be classified into elements that utilize the temperature change of electrical resistance, elements that utilize the Seebeck effect, which is a phenomenon in which an electromotive force is generated due to a temperature difference, and elements that utilize the Peltier effect, which is a phenomenon in which heat absorption or heat generation occurs due to an electric current.

[0005] Thermoelectric elements are variously applied to home appliances, electronic components, communication components, etc. For example, thermoelectric elements can be applied to cooling devices, heating devices, power generation devices, etc. Along with this, the requirements for the thermoelectric performance of thermoelectric elements are increasing more and more.

[0006] A thermoelectric element includes a substrate, electrodes, and thermoelectric legs. A plurality of thermoelectric legs are arranged in the form of an array between an upper substrate and a lower substrate, a plurality of upper electrodes are arranged between the plurality of thermoelectric legs and the upper substrate, and a plurality of lower electrodes are arranged between the plurality of thermoelectric legs and the lower substrate.

[0007] In the manufacturing process of a thermoelectric element, it can be processed in a high-temperature environment for joining between the substrate, electrodes, and thermoelectric legs. Along with this, a bending phenomenon may occur in the substrate, and the long-term reliability, durability, and power generation performance of the thermoelectric element may be reduced due to the bending phenomenon of the substrate.

Summary of the Invention

Problems to be Solved by the Invention

[0008] The technical problem to be solved by the present invention is to provide a structure of an electrode portion of a thermoelectric module.

Means for Solving the Problem

[0009] A thermoelectric element according to an embodiment of the present invention includes one first substrate, an insulating layer disposed on the one first substrate, a first electrode portion disposed on the insulating layer, a first terminal electrode and a second terminal electrode disposed on the insulating layer and protruding from the first electrode portion toward a first outer side of the first substrate, a semiconductor structure disposed on the first electrode portion, a second electrode portion disposed on the semiconductor structure, and a second substrate portion disposed on the second electrode portion. The second substrate portion includes a plurality of second substrates disposed so as to be separated from each other. The first electrode portion includes a plurality of electrode groups vertically overlapping with each of the plurality of second substrates, and a first connection electrode connecting two different electrode groups among the plurality of electrode groups. A long side of the first connection electrode is longer than a long side of a first electrode included in the plurality of electrode groups, and at least a part of the first connection electrode is disposed so as not to vertically overlap with the plurality of second substrates.

[0010] The first terminal electrode and the second terminal electrode are respectively disposed in different electrode groups from each other, and the first connection electrode may be disposed in a row closest to the first terminal electrode and the second terminal electrode within the plurality of electrode groups so as to connect the different electrode groups.

[0011] The plurality of electrode groups include different electrode groups divided between the first outer side and a second outer side facing the first outer side. The first electrode portion includes two connection electrodes so as to connect the different electrode groups. The two connection electrodes may be the first connection electrode and a second connection electrode disposed adjacent to the first connection electrode and side by side with each other.

[0012] The two connecting electrodes may be arranged in two columns that are the two most adjacent columns in the outermost row within the plurality of electrode groups.

[0013] The plurality of electrode groups include a first electrode group, a second electrode group, and a third electrode group that are sequentially divided between the first outer side and a second outer side opposite the first outer side. The first electrode portion includes two connecting electrodes that are arranged adjacent to each other so as to connect the first electrode group and the second electrode group, and another two connecting electrodes that are arranged adjacent to each other so as to connect the second electrode group and the third electrode group. The two connecting electrodes include the first connecting electrode and a second connecting electrode that is arranged side by side adjacent to the first connecting electrode. The two connecting electrodes are arranged on one side of a third outer side perpendicular to the first outer side and a fourth outer side opposite the third outer side. The other two connecting electrodes include a third connecting electrode and a fourth connecting electrode that is arranged side by side adjacent to the third connecting electrode. The other two connecting electrodes may be arranged on the other side of the third outer side and the fourth outer side.

[0014] The two connecting electrodes are arranged in two columns that are the two most adjacent columns in the outermost row of the third outer side, and the other two connecting electrodes may be arranged in two columns that are the two most adjacent columns in the outermost row of the fourth outer side.

[0015] The plurality of electrode groups include different electrode groups divided between a third outer side perpendicular to the first outer side and a fourth outer side opposite the third outer side. The first connecting electrode may be arranged in the outermost row within the different electrode groups.

[0016] The first electrode portion includes two connecting electrodes that are arranged to connect the different electrode groups. The two connecting electrodes include the first connecting electrode and a second connecting electrode that is arranged side by side adjacent to the first connecting electrode. The two connecting electrodes may be arranged in the outermost row and the row that is the most adjacent to the outermost row within the different electrode groups.

[0017] The insulating layer includes a first insulating layer disposed on the first substrate and a second insulating layer disposed on the first insulating layer and having an area smaller than the area of the first insulating layer. The second insulating layer can include an overlapping region that overlaps perpendicularly with the second substrate portion and a protruding pattern that protrudes from the overlapping region toward the first outside of the first substrate.

[0018] The protruding pattern includes a first protruding pattern and a second protruding pattern arranged to be separated from each other. The first terminal electrode can be disposed on the first protruding pattern, and the second terminal electrode can be disposed on the second protruding pattern.

[0019] The plurality of electrode groups are arranged to be separated from each other on the insulating layer, and can further include a dummy portion disposed between the plurality of electrode groups on the insulating layer.

[0020] The dummy portion can include a plurality of dummy structures having the same shape and size as each electrode included in each of the plurality of electrode groups and arranged to be separated from each other.

[0021] Each dummy structure can be a metal layer or a resin layer. The plurality of electrode groups include a first electrode group and a second electrode group divided between the first outside and a second outside facing the first outside. The first electrode group includes a first - 1 electrode group and a first - 2 electrode group divided between a third outside perpendicular to the first outside and a fourth outside facing the third outside. The second electrode group includes a second - 1 electrode group and a second - 2 electrode group divided between the third outside and the fourth outside. The dummy portion can include a first dummy portion disposed between the first - 1 electrode group and the first - 2 electrode group, a second dummy portion disposed between the second - 1 electrode group and the second - 2 electrode group, and a third dummy portion disposed between the first electrode group and the second electrode group.

[0022] The first dummy portion and the second dummy portion may be arranged so as to be separated from each other.

[0023] A thermoelectric element according to another embodiment of the present invention includes a first substrate; a first electrode portion disposed on the first substrate and including a first electrode group and a second electrode group arranged so as to be separated from each other; a second electrode portion disposed on the first electrode portion and including a third electrode group and a fourth electrode group arranged so as to be separated from each other; and a semiconductor structure disposed between the first electrode portion and the second electrode portion. The first electrode group and the third electrode group overlap each other in a direction perpendicular to the first substrate so as to form a first region, the second electrode group and the fourth electrode group overlap each other in a direction perpendicular to the first substrate so as to form a second region, a separation region is formed between the first region and the second region, and the separation region includes a dummy portion disposed in at least a part thereof.

[0024] Each electrode group includes a plurality of electrodes arranged so as to be separated from each other, and a separation distance between the first electrode group and the second electrode group may be larger than a separation distance between the plurality of electrodes in each electrode group.

[0025] The first electrode group and the second electrode group are separated in a first direction, the first electrode group includes a first - 1 electrode group and a first - 2 electrode group separated in a second direction perpendicular to the first direction, and the second electrode group may include a second - 1 electrode group and a second - 2 electrode group separated in a second direction perpendicular to the first direction.

[0026] The dummy portion may include a first dummy portion disposed between the first - 1 electrode group and the second - 1 electrode group and a second dummy portion disposed between the first - 2 electrode group and the second - 2 electrode group.

[0027] The first dummy portion and the second dummy portion may be separated from each other.

[0028] The dummy portion may further include a third dummy portion disposed between the first - 1 electrode group and the first - 2 electrode group and between the second - 1 electrode group and the second - 2 electrode group.

[0029] The first electrode portion may further include a first terminal electrode connected to the first - 1 electrode group and a second terminal electrode connected to the second - 1 electrode group.

[0030] The first electrode portion may further include a connection electrode portion that connects at least a part of the first - 1 electrode group, the first - 2 electrode group, the second - 1 electrode group, and the second - 2 electrode group.

[0031] The connection electrode portion may include at least one of a first connection electrode disposed between the first - 1 electrode group and the second - 1 electrode group, a second connection electrode disposed between the first - 1 electrode group and the first - 2 electrode group, a third connection electrode disposed between the first - 2 electrode group and the second - 2 electrode group, and a fourth connection electrode disposed between the second - 1 electrode group and the second - 2 electrode group.

[0032] The first dummy portion and the second dummy portion may be separated by the first connection electrode, the third dummy portion, and the second connection electrode.

[0033] At least one of the first dummy portion, the second dummy portion, and the third dummy portion may include a plurality of dummy structures having the same shape and size as each electrode included in each electrode group and arranged to be separated from each other.

[0034] Each dummy structure may be a metal layer or a resin layer. It further includes a second substrate portion disposed on the second electrode portion. The second substrate portion includes a plurality of second substrates arranged to be separated from each other, and each second substrate may be arranged to correspond to each electrode group.

[0035] It may further include an insulator disposed in a separation region between the plurality of second substrates.

[0036] The insulator may be disposed so as to extend from the separation region between the plurality of second substrates to the dummy portion.

[0037] It may further include a plurality of coupling members passing through a plurality of through-holes extending from each of the second substrates to the first substrate through each of the electrode groups.

[0038] It may further include a plurality of heat sinks disposed on each of the second substrates.

[0039] It may further include a plurality of coupling members passing through a plurality of through-holes extending from each of the heat sinks to the first substrate through each of the electrode groups.

[0040] It may further include an insulating layer disposed between the first substrate and the first electrode portion.

[0041] The insulating layer may include a plurality of insulating layers at least one of which is different from each other in terms of composition and elasticity.

Advantages of the Invention

[0042] According to an embodiment of the present invention, it is possible to obtain a thermoelectric element with high long-term reliability, durability, and power generation performance by improving the bending phenomenon of the substrate.

[0043] Further, according to an embodiment of the present invention, it is possible to optimize the reliability, durability, and power generation performance of the thermoelectric element by designing the structures of the high-temperature portion substrate and the low-temperature portion substrate to be different.

[0044] In particular, according to an embodiment of the present invention, it is possible to prevent the problem that the substrate bends due to the shape in which the electrodes are disposed on the substrate.

Brief Description of the Drawings

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Mode for Carrying Out the Invention

[0046] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0047] However, the technical idea of the present invention is not limited to some of the described embodiments and can be embodied in various different forms, and within the scope of the technical idea of the present invention, one or more of the components can be selectively combined and replaced between the embodiments for use.

[0048] Also, the terms (including technical and scientific terms) used in the embodiments of the present invention can be interpreted in a meaning generally understood by those having ordinary knowledge in the technical field to which the present invention pertains, unless specifically defined and described, and terms generally used like those defined in a dictionary can be interpreted considering their meaning in the context of the related art.

[0049] Also, the terms used in the embodiments of the present invention are for explaining the embodiments and are not intended to limit the present invention.

[0050] In this specification, the singular form can also include the plural form unless otherwise specifically stated in the context, and when described as "at least one (or one or more) of A, B, and C", it can include one or more of all combinations that can be combined with A, B, and C.

[0051] Also, when describing the components of the embodiments of the present invention, terms such as first, second, A, B, (a), (b), etc. can be used.

[0052] Such terms are merely for distinguishing the components from other components and are not limited to the essence, order, or sequence of the corresponding components by such terms.

[0053] And when a component is described as "connected", "coupled", or "joined" to another component, that component can include not only the case where it is directly connected, coupled, or joined to the other component, but also the case where it is "connected", "coupled", or "joined" by still another component between that component and the other component.

[0054] Also, when described as being formed or arranged "above or below" each component, "above or below" includes not only the case where two components are in direct contact with each other, but also the case where one or more additional components are formed or arranged between the two components. Also, when expressed as "above or below", it can include the meaning not only in the upward direction but also in the downward direction with respect to one component.

[0055] Figure 1 is a cross-sectional view of a thermoelectric element, and Figure 2 is a perspective view of the thermoelectric element. Figure 3 is a perspective view of a thermoelectric element including a sealing member, and Figure 4 is an exploded perspective view of the thermoelectric element including the sealing member. Figure 5 is a cross-sectional view of a substrate, an insulating layer, and an electrode in the thermoelectric element.

[0056] Referring to FIGS. 1 to 2, the thermoelectric element 100 includes a lower substrate 110, a lower electrode 120, a P-type thermoelectric leg 130, an N-type thermoelectric leg 140, an upper electrode 150, and an upper substrate 160.

[0057] The lower electrode 120 is disposed between the lower substrate 110 and the lower bottom surfaces of the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140, and the upper electrode 150 is disposed between the upper substrate 160 and the upper bottom surfaces of the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140. Accordingly, the plurality of P-type thermoelectric legs 130 and the plurality of N-type thermoelectric legs 140 are electrically connected by the lower electrode 120 and the upper electrode 150. A pair of P-type thermoelectric leg 130 and N-type thermoelectric leg 140 disposed between the lower electrode 120 and the upper electrode 150 and electrically connected can form a unit cell.

[0058] For example, when a voltage is applied to the lower electrode 120 and the upper electrode 150 through the output lines 181 and 182, the substrate where current flows from the P-type thermoelectric leg 130 to the N-type thermoelectric leg 140 due to the Peltier effect absorbs heat and acts as a cooling part, and the substrate where current flows from the N-type thermoelectric leg 140 to the P-type thermoelectric leg 130 can heat up and act as a heating part. Or when a temperature difference is applied between the lower electrode 120 and the upper electrode 150, charges in the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 may move due to the Seebeck effect, generating electricity.

[0059] Although FIGS. 1 to 4 illustrate the output lines 181 and 182 as being disposed on the lower substrate 110, the present invention is not limited thereto, and the output lines 181 and 182 may be disposed on the upper substrate 160, or one of the output lines 181 and 182 may be disposed on the lower substrate 110 and the remaining one may be disposed on the upper substrate 160.

[0060] Here, the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 can be bismuth telluride (Bi-Te)-based thermoelectric legs containing bismuth (Bi) and tellurium (Te) as main raw materials. The P-type thermoelectric leg 130 can be a bismuth telluride (Bi-Te)-based thermoelectric leg containing at least one of antimony (Sb), nickel (Ni), aluminum (Al), copper (Cu), silver (Ag), lead (Pb), boron (B), gallium (Ga), tellurium (Te), bismuth (Bi), and indium (In). For example, the P-type thermoelectric leg 130 contains 99 - 99.999 wt% of Bi-Sb-Te, which is the main raw material substance, with respect to the total weight of 100 wt%, and can contain at least one of nickel (Ni), aluminum (Al), copper (Cu), silver (Ag), lead (Pb), boron (B), gallium (Ga), and indium (In) at 0.001 - 1 wt%. The N-type thermoelectric leg 140 can be a bismuth telluride (Bi-Te)-based thermoelectric leg containing at least one of selenium (Se), nickel (Ni), aluminum (Al), copper (Cu), silver (Ag), lead (Pb), boron (B), gallium (Ga), tellurium (Te), bismuth (Bi), and indium (In). For example, the N-type thermoelectric leg 140 contains 99 - 99.999 wt% of Bi-Se-Te, which is the main raw material substance, with respect to the total weight of 100 wt%, and can contain at least one of nickel (Ni), aluminum (Al), copper (Cu), silver (Ag), lead (Pb), boron (B), gallium (Ga), and indium (In) at 0.001 - 1 wt%. Accordingly, in this specification, the thermoelectric leg may also be referred to as a semiconductor structure, a semiconductor element, a semiconductor material layer, a semiconductor substance layer, a semiconductor material layer, a conductive semiconductor structure, a thermoelectric structure, a thermoelectric material layer, a thermoelectric substance layer, a thermoelectric material layer, etc.

[0061] The P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 can be formed in a bulk type or a laminated type. Generally, the bulk type P-type thermoelectric leg 130 or the bulk type N-type thermoelectric leg 140 can be obtained through a process of heat-treating a thermoelectric material to produce an ingot, crushing the ingot and sieving it to obtain powder for the thermoelectric leg, sintering this powder, and cutting the sintered body. At this time, the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 can be polycrystalline thermoelectric legs. Thus, when the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 are polycrystalline thermoelectric legs, the strength of the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 can be increased. The laminated type P-type thermoelectric leg 130 or the laminated type N-type thermoelectric leg 140 can be obtained through a process of applying a paste containing a thermoelectric material onto a sheet-like substrate to form unit members, and then laminating and cutting the unit members.

[0062] At this time, the pair of P-type thermoelectric legs 130 and N-type thermoelectric legs 140 can have the same shape and volume, or can have different shapes and volumes from each other. For example, since the electrical conduction characteristics of the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 are different, the height or cross-sectional area of the N-type thermoelectric leg 140 can be formed to be different from the height or cross-sectional area of the P-type thermoelectric leg 130.

[0063] At this time, the P-type thermoelectric leg 130 or the N-type thermoelectric leg 140 can have a cylindrical shape, a polygonal column shape, an elliptical column shape, etc.

[0064] Or the P-type thermoelectric leg 130 or the N-type thermoelectric leg 140 may have a laminated structure. For example, the P-type thermoelectric leg or the N-type thermoelectric leg can be formed by a method of laminating a plurality of structures in which a semiconductor substance is applied to a sheet-like substrate and then cutting this. Along with this, material loss can be prevented and the electrical conduction characteristics can be improved. Each structure can further include a conductive layer having an opening pattern, and along with this, the adhesive force between the structures can be increased, the thermal conductivity can be decreased, and the electrical conductivity can be increased.

[0065] Alternatively, the P-type thermoelectric leg 130 or the N-type thermoelectric leg 140 may be formed such that the cross-sectional area varies within a single thermoelectric leg. For example, the cross-sectional areas of both end portions arranged toward the electrodes within a single thermoelectric leg may be formed to be larger than the cross-sectional area between the both end portions. According to this, since the temperature difference between the both end portions can be increased, the thermoelectric efficiency can be enhanced.

[0066] The performance of the thermoelectric element according to an embodiment of the present invention can be indicated by a thermoelectric figure of merit (ZT). The thermoelectric figure of merit (ZT) can be expressed as in Mathematical Formula 1. [Mathematical Formula 1]

[0067] [Number]

[0068] Here, α is the Seebeck coefficient [V / K], σ is the electrical conductivity [S / m], and α 2 σ is the power factor ([W / mK 2 ). And, T is the temperature, and k is the thermal conductivity [W / mK]. k can be expressed as a·cp·ρ, where a is the thermal diffusivity [cm 2 / S], cp is the specific heat [J / gK], and ρ is the density [g / cm 3 .

[0069] In order to obtain the thermoelectric figure of merit of the thermoelectric element, a Z-meter can be used to measure the Z value (V / K), and the measured Z value can be used to calculate the thermoelectric figure of merit (ZT).

[0070] Here, the lower electrode 120 disposed between the lower substrate 110 and the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140, and the upper electrode 150 disposed between the upper substrate 160 and the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 include at least one of copper (Cu), silver (Ag), aluminum (Al), and nickel (Ni), and can have a thickness of 0.01 mm to 0.3 mm. When the thickness of the lower electrode 120 or the upper electrode 150 is less than 0.01 mm, its function as an electrode may fail and the electrical conduction performance may decrease. When it exceeds 0.3 mm, the conduction efficiency may decrease due to an increase in resistance.

[0071] Moreover, the lower substrate 110 and the upper substrate 160 facing each other can be metal substrates, and their thickness can be 0.1 mm to 1.5 mm. If the thickness of the metal substrate is less than 0.1 mm or exceeds 1.5 mm, the heat dissipation characteristics or the thermal conductivity may become excessively high, so the reliability of the thermoelectric element may decrease. Also, when the lower substrate 110 and the upper substrate 160 are metal substrates, insulating layers 170 can be further formed between the lower substrate 110 and the lower electrode 120 and between the upper substrate 160 and the upper electrode 150, respectively. The insulating layer 170 can include a material having a thermal conductivity of 1 to 20 W / mK.

[0072] At this time, the sizes of the lower substrate 110 and the upper substrate 160 may be formed differently. For example, the volume, thickness, or area of one of the lower substrate 110 and the upper substrate 160 can be formed larger than the volume, thickness, or area of the other. Accordingly, the heat absorption performance or the heat dissipation performance of the thermoelectric element can be enhanced. For example, at least one of the volume, thickness, or area of the substrate disposed in the high-temperature region for the Seebeck effect, applied to the heat generation region for the Peltier effect, or provided with a sealing member for protection from the external environment of the thermoelectric module can be even larger than at least one of the volume, thickness, or area of the other substrate.

[0073] Further, a heat dissipation pattern, for example, a concavo-convex pattern may be formed on at least one surface of the lower substrate 110 and the upper substrate 160. Along with this, the heat dissipation performance of the thermoelectric element can be enhanced. When the concavo-convex pattern is formed on the surface in contact with the P-type thermoelectric leg 130 or the N-type thermoelectric leg 140, the bonding characteristics between the thermoelectric leg and the substrate can also be improved. The thermoelectric element 100 includes a lower substrate 110, a lower electrode 120, a P-type thermoelectric leg 130, an N-type thermoelectric leg 140, an upper electrode 150, and an upper substrate 160.

[0074] As shown in FIGS. 3 to 4, a sealing member 190 may be further disposed between the lower substrate 110 and the upper substrate 160. The sealing member 190 may be disposed on the side surfaces of the lower electrode 120, the P-type thermoelectric leg 130, the N-type thermoelectric leg 140, and the upper electrode 150 between the lower substrate 110 and the upper substrate 160. Accordingly, the lower electrode 120, the P-type thermoelectric leg 130, the N-type thermoelectric leg 140, and the upper electrode 150 can be sealed from external moisture, heat, contamination, etc. Here, the sealing member 190 includes a sealing case 192 disposed at a predetermined distance from the outermost contours of the plurality of lower electrodes 120, the outermost contours of the plurality of P-type thermoelectric legs 130 and the plurality of N-type thermoelectric legs 140, and the outermost contours of the plurality of upper electrodes 150, a sealing material 194 disposed between the sealing case 192 and the lower substrate 110, and a sealing material 196 disposed between the sealing case 192 and the upper substrate 160. In this way, the sealing case 192 can contact the lower substrate 110 and the upper substrate 160 through the sealing materials 194 and 196. Accordingly, when the sealing case 192 is in direct contact with the lower substrate 110 and the upper substrate 160, heat conduction occurs through the sealing case 192, and as a result, the problem of a decrease in the temperature difference between the lower substrate 110 and the upper substrate 160 can be prevented. Here, the sealing materials 194 and 196 can include at least one of an epoxy resin and a silicone resin, or a tape with at least one of an epoxy resin and a silicone resin coated on both sides. The sealing materials 194 and 194 serve to airtight the space between the sealing case 192 and the lower substrate 110 and between the sealing case 192 and the upper substrate 160, and can enhance the sealing effect of the lower electrode 120, the P-type thermoelectric leg 130, the N-type thermoelectric leg 140, and the upper electrode 150, and can be mixed with a finishing material, a finishing layer, a waterproof material, a waterproof layer, etc. Here, the sealing material 194 for sealing between the sealing case 192 and the lower substrate 110 is disposed on the surface of the lower substrate 110, and the sealing material 196 for sealing between the sealing case 192 and the upper substrate 160 can be disposed on the side surface of the upper substrate 160. On the other hand, a guide groove G for drawing out the lead wires 181 and 182 connected to the electrodes may be formed in the sealing case 192.For this purpose, the sealing case 192 can be an injection molded product made of plastic or the like and can be used in combination with the sealing cover. However, the above description of the sealing member is merely illustrative, and the sealing member can be deformed in various forms. Although not shown, a heat insulating material may further be included so as to surround the sealing member. Or the sealing member may include a heat insulating component.

[0075] Although the terms lower substrate 110, lower electrode 120, upper electrode 150, and upper substrate 160 have been used above, this is merely an arbitrary reference to upper and lower for ease of understanding and convenience of explanation, and the positions may be reversed such that the lower substrate 110 and the lower electrode 120 are arranged on the upper side and the upper electrode 150 and the upper substrate 160 are arranged on the lower side.

[0076] In this specification, the lower substrate 110 can be used interchangeably with the first substrate 110 or the first substrate portion 110, and the upper substrate 160 can be used interchangeably with the second substrate 160 or the second substrate portion 160. Similarly, the lower electrode 120 can be used interchangeably with the first electrode 120 or the first electrode portion 120, and the upper electrode 150 can be used interchangeably with the second electrode 150 or the second electrode portion 150.

[0077] On the other hand, as described above, in order to improve the heat conduction performance of the thermoelectric element, attempts to use a metal substrate are increasing. However, when the thermoelectric element includes a metal substrate, although an advantageous effect can be obtained in terms of heat conduction, there is a problem that the withstand voltage becomes low. In particular, when the thermoelectric element is applied in a high voltage environment, a withstand voltage performance of 2.5 kV or more is required. In order to improve the withstand voltage performance of the thermoelectric element, a plurality of insulating layers having different compositions can be arranged between the metal substrate and the electrode.

[0078] Referring to FIG. 5, the insulating layer 170 includes a first insulating layer 172 disposed on the first substrate 110 and a second insulating layer 174 disposed on the first insulating layer 172, and the first electrode 120 can be disposed on the second insulating layer 174. For convenience of explanation, the insulating layer on the side of the first substrate 110 will be mainly described, but the same content can also be applied to the insulating layer on the side of the second substrate 160.

[0079] At this time, the first insulating layer 172 can exemplarily contain a resinous substance, and can contain a composite including silicon and aluminum and an inorganic filler. Here, the composite can be an organic-inorganic composite composed of an inorganic substance containing Si and Al elements and an alkyl chain, and can be at least one of oxides, carbides, and nitrides containing silicon and aluminum. For example, the composite can contain at least one of Al-Si bonds, Al-O-Si bonds, Si-O bonds, Al-Si-O bonds, and Al-O bonds. Thus, a composite containing at least one of Al-Si bonds, Al-O-Si bonds, Si-O bonds, Al-Si-O bonds, and Al-O bonds has excellent insulating performance, and accordingly, high breakdown voltage performance can be obtained. Or the composite can be an oxide, carbide, or nitride further containing titanium, zirconium, boron, zinc, etc. together with silicon and aluminum. For this purpose, the composite can be obtained through a process of heat-treating after mixing at least one of an inorganic binder and an organic-inorganic hybrid binder with aluminum. The inorganic binder can contain, for example, at least one of silica (SiO 2 ), metal alkoxide, boron oxide (B 2 O 3 ), and zinc oxide (ZnO 2 ). Although the inorganic binder is an inorganic particle, when it comes into contact with water, it can be solated or gelled to serve as a binding role. At this time, at least one of silica (SiO 2 ), metal alkoxide, and boron oxide (B 2 O 3 ) plays a role of enhancing the adhesion between aluminums or the adhesion to the first substrate 110, and zinc oxide (ZnO 2 ) can play a role of enhancing the strength of the first insulating layer 172 and enhancing the thermal conductivity. The inorganic filler can be dispersed in the composite and can contain at least one of aluminum oxide and nitride. Here, the nitride can contain at least one of boron nitride and aluminum nitride.

[0080] On the one hand, the second insulating layer 174 can be composed of a resin layer containing at least one of an epoxy resin composition containing an epoxy resin and an inorganic filler and a silicone resin composition containing PDMS (polydimethylsiloxane). Accordingly, the second insulating layer 174 can improve the insulation property, bonding strength, and heat conduction performance between the first insulating layer 172 and the first electrode 120.

[0081] Here, the inorganic filler can be contained in the resin layer at 60 to 80 wt%. If the inorganic filler is contained at less than 60 wt%, the heat conduction effect may be low. If the inorganic filler is contained in excess of 80 wt%, it is difficult for the inorganic filler to be uniformly dispersed in the resin, and the resin layer may be easily broken.

[0082] And the epoxy resin can contain an epoxy compound and a curing agent. At this time, the curing agent can be contained at a volume ratio of 1 to 10 with respect to 10 volume ratios of the epoxy compound. Here, the epoxy compound can contain at least one of a crystalline epoxy compound, an amorphous epoxy compound, and a silicone epoxy compound. The inorganic filler can contain at least one of aluminum oxide and nitride. Here, the nitride can contain at least one of boron nitride and aluminum nitride.

[0083] On one hand, the second insulating layer 174 can be formed by applying an uncured or semi-cured resin composition onto the first insulating layer 172, arranging a plurality of pre-aligned first electrodes 120 thereon, and then subjecting the assembly to a curing process under pressure. Accordingly, a part of the side surfaces of the plurality of first electrodes 120 can be embedded within the second insulating layer 172. At this time, the height H1 of the side surfaces of the plurality of first electrodes 120 embedded within the second insulating layer 174 can be 0.1 to 1 times, preferably 0.2 to 0.9 times, and more preferably 0.3 to 0.8 times the thickness H of the plurality of first electrodes 330. In this way, when a part of the side surfaces of the plurality of first electrodes 120 is embedded within the second insulating layer 174, the contact area between the plurality of first electrodes 120 and the second insulating layer 174 becomes larger. Accordingly, the heat transfer performance and the bonding strength between the plurality of first electrodes 120 and the second insulating layer 174 can be further enhanced. When the height H1 of the side surfaces of the plurality of first electrodes 120 embedded within the second insulating layer 174 is less than 0.1 times the thickness H of the plurality of first electrodes 120, it may be difficult to sufficiently obtain the heat transfer performance and the bonding strength between the plurality of first electrodes 120 and the second insulating layer 174. When the height H1 of the side surfaces of the plurality of first electrodes 120 embedded within the second insulating layer 174 exceeds 1 times the thickness H of the plurality of first electrodes 120, the second insulating layer 174 may rise above the plurality of first electrodes 120, and accordingly, there may be a risk of electrical short circuit.

[0084] Thus, the upper surface of the second insulating layer 174 can include a first concave surface R1 and a second concave surface R2 disposed around the first concave surface R1. The plurality of first electrodes 120 are respectively disposed on the first concave surface R1, and the first vertical distance between the first concave surface R1 and the first substrate 110 may be smaller than the second vertical distance between the second concave surface R2 and the first substrate 110. More specifically, the thickness of the second insulating layer 174 between the plurality of first electrodes 120 may decrease from the side surfaces of the respective electrodes toward the central region, and the apex may have a gentle "V" shape. Therefore, the insulating layer 170 between the plurality of first electrodes 120 has a thickness deviation, and the height D2 in the region in direct contact with the side surfaces of the plurality of first electrodes 120 is the highest, and the height D3 in the central region may be lower than the height D2 in the region in direct contact with the side surfaces of the plurality of first electrodes 120. That is, the height D3 of the central region of the insulating layer 170 between the plurality of first electrodes 120 may be the lowest within the insulating layer 170 between the plurality of first electrodes 120. Also, the height D1 of the insulating layer 170 under the plurality of first electrodes 120 may be lower than the height D3 of the central region of the insulating layer 170 between the plurality of first electrodes 120. By including the second concave surface R2 in the second insulating layer 174, the stress applied to the insulating layer can be relaxed, so that problems such as cracks and peeling of the insulating layer can be improved.

[0085] On the one hand, the compositions of the first insulating layer 172 and the second insulating layer 174 are different from each other. Accordingly, at least one of the hardness, elastic modulus, tensile strength, elongation, and Young's modulus of the first insulating layer 172 and the second insulating layer 174 may change. Accordingly, it is possible to control voltage resistance performance, heat conduction performance, bonding performance, heat shock relaxation performance, and the like. For example, the weight ratio of the composite and the inorganic filler with respect to the entire first insulating layer 172 may be higher than the weight ratio of the inorganic filler with respect to the entire second insulating layer 174. As described above, the composite may be a composite containing silicon and aluminum, and more specifically, a composite containing at least one of oxides, carbides, and nitrides containing silicon and aluminum. For example, the weight ratio of the ceramic, that is, the composite and the inorganic filler, with respect to the entire first insulating layer 172 may exceed 80 wt%, and the weight ratio of the ceramic, that is, the inorganic filler, with respect to the entire second insulating layer 174 may be 60 to 80 wt%. Thus, when the content of the composite and the inorganic filler contained in the first insulating layer 172 is higher than the content of the inorganic filler contained in the second insulating layer 174, the hardness of the first insulating layer 172 may be higher than the hardness of the second insulating layer 174. Accordingly, the first insulating layer 172 can simultaneously have high voltage resistance performance and high heat conduction performance, the second insulating layer 174 can have higher elasticity than the first insulating layer 172, and the second insulating layer 174 can enhance the adhesion performance between the first insulating layer 172 and the first electrode 120. At this time, the elasticity can be indicated by the tensile strength. For example, the tensile strength of the second insulating layer 174 may be 2 to 5 MPa, preferably 2.5 to 4.5 MPa, more preferably 3 to 4 MPa, and the tensile strength of the first insulating layer 172 may be 10 MPa to 100 MPa, preferably 15 MPa to 90 MPa, more preferably 20 MPa to 80 MPa.

[0086] At this time, the thickness of the second insulating layer 174 can be more than 1 times and not more than 3.5 times the thickness of the first insulating layer 172, preferably not less than 1.05 times and not more than 2 times, and more preferably not less than 1.1 times and not more than 1.5 times. For example, the thickness of the first insulating layer 172 can be not more than 35 μm, and the thickness of the second insulating layer 174 can be more than 35 μm and not more than 80 μm, preferably more than 35 μm and not more than 70 μm, and more preferably more than 35 μm and not more than 50 μm.

[0087] When the thicknesses of the first insulating layer 172 and the second insulating layer 174 satisfy such numerical ranges respectively, it is possible to obtain breakdown voltage performance, heat conduction performance, bonding performance, and thermal shock mitigation performance simultaneously.

[0088] Also, the width of the first concave surface R1 can be arranged to be larger than the width of the second concave surface R2. Therefore, a structure in which electrodes are densely arranged on the substrate can be achieved, and thus the power generation performance or temperature regulation performance of the thermoelectric element can be improved.

[0089] Also, the thermal expansion coefficient of the second insulating layer 174 may be higher than that of the first insulating layer 172. According to this, the bending phenomenon of the substrate can be improved.

[0090] FIG. 6 is a perspective view of a thermoelectric module according to an embodiment of the present invention, FIG. 7 is an exploded perspective view of the thermoelectric module of FIG. 6, FIG. 8 is a cross-sectional view of the thermoelectric module of FIG. 6, FIG. 9 is an example of a top view of the first substrate side included in the thermoelectric module of FIG. 6, and FIG. 10 is another example of a top view of the first substrate side included in the thermoelectric module of FIG. 6.

[0091] Referring to FIGS. 6 to 9, a thermoelectric element 300 according to an embodiment of the present invention includes a first substrate 310, a first insulating layer 320 disposed on the first substrate 310, a first electrode portion 330 disposed on the first insulating layer 320, a plurality of P-type thermoelectric legs 340 and a plurality of N-type thermoelectric legs 350 disposed on the plurality of first electrodes 330, a second electrode portion 360 disposed on the plurality of P-type thermoelectric legs 340 and the plurality of N-type thermoelectric legs 350, a second insulating layer 370 disposed on the second electrode portion 360, a second substrate portion 380 disposed on the second insulating layer 370, and a heat sink 390 disposed on the second substrate portion 380. For each of the first substrate 310, the first electrode portion 330, the P-type thermoelectric leg 340, the N-type thermoelectric leg 350, the second electrode portion 360, and the second substrate portion 380, redundant descriptions of the same content as the descriptions of the first substrate 110, the first electrode 120, the P-type thermoelectric leg 130, the N-type thermoelectric leg 140, the second electrode 150, and the second substrate 160 in FIGS. 1 to 4 are omitted. Also, for the first insulating layer 320 and the second insulating layer 370, redundant descriptions of the same content as the description of the insulating layer 170 in FIGS. 1 to 5 are omitted. Although not shown in FIGS. 6 to 8, a sealing member may be further disposed between the first substrate 310 and the second substrate portion 380.

[0092] According to an embodiment of the present invention, the second substrate portion 380 may include a plurality of second substrates 381, 382, 383, 384 arranged to be separated from each other, and through holes for the coupling member 400 to pass through may be formed in each of the second substrates 381, 382, 383, 384 included in the first substrate 310 and the second substrate portion 380.

[0093] The first substrate 310 may be formed in a plate shape, and although not shown, the first substrate may be disposed on a cooling portion or a heat generating portion. In order to fix the thermoelectric module 300 according to an embodiment of the present invention on the cooling portion or the heat generating portion, grooves or holes into which the coupling member 400 can be inserted may be formed in the cooling portion C or the heat generating portion.

[0094] The plurality of second substrates 381, 382, 383, 384 included in the first substrate 310 and the second substrate portion 380 can include at least one of aluminum, aluminum alloy, copper, and copper alloy. At this time, when a voltage is applied to the thermoelectric module, the first substrate 310 can absorb heat by the Peltier effect and act as a low-temperature part, and the second substrate portion 380 can release heat and act as a high-temperature part. On the other hand, when different temperatures are applied to the first substrate 310 and the second substrate portion 380, electrons in the high-temperature region move to the low-temperature region due to the temperature difference, generating a thermoelectromotive force. This is called the Seebeck effect, and electricity can be generated in the circuit of the thermoelectric element by the thermoelectromotive force generated thereby.

[0095] A plurality of first through holes 311 may be formed in the first substrate 310. And a second through hole 3811, 3821, 3831, 3841 may be formed in each of the plurality of second substrates 381, 382, 383, 384, and the plurality of first through holes 311 may be arranged at positions corresponding to the second through holes 3811, 3821, 3831, 3841. Accordingly, the plurality of coupling members 400 can pass through the plurality of first through holes 311 and the second through holes 3811, 3821, 3831, 3841, and the first substrate 310 and the second substrate portion 380 can be fixed by the plurality of coupling members 400.

[0096] On the other hand, when the heat sinks 391, 392, 393, 394 are arranged on each of the second substrates 381, 382, 383, 384, third through holes 3911, 3921, 3931, 3941 may be formed in the heat sinks 391, 392, 393, 394, and the plurality of first through holes 311 may be arranged at positions corresponding to the second through holes 3811, 3821, 3831, 3841 and the third through holes 3911, 3921, 3931, 3941. Accordingly, the plurality of coupling members 400 can pass through the plurality of first through holes 311, the second through holes 3811, 3821, 3831, 3841, and the third through holes 3911, 3921, 3931, 3941, and the first substrate 310, the second substrate portion 380, and the heat sink 390 can be fixed by the plurality of coupling members 400.

[0097] As shown in FIGS. 6 to 8, when the second substrate portion 380 is divided into a plurality of second substrates 381, 382, 383, 384, even if the second substrate portion 380 is frequently exposed to high temperatures, it is possible to prevent the problem of thermal deformation due to thermal expansion of the second substrate portion 380, and it is easy to apply to large-area applications.

[0098] At this time, the area ratio of each of the second substrates 381, 382, 383, 384 to the area of the first substrate 310 can be 0.10 to 0.50, preferably 0.15 to 0.45, and more preferably 0.2 to 0.40.

[0099] When the second substrate portion 380 includes a plurality of second substrates 381, 382, 383, 384 arranged to be separated from each other, the first electrode portion 330 disposed on the first substrate 310 can be arranged to correspond to the plurality of second substrates 381, 382, 383, 384.

[0100] That is, as shown in FIG. 8, the first electrode portion 330 includes a plurality of electrode groups arranged to be separated from each other, the second electrode portion 360 includes a plurality of electrode groups arranged to be separated from each other, and each electrode group of the first electrode portion 330 overlaps with each electrode group of the second electrode portion 360 in the direction from the first substrate 310 toward the second substrate portion 380 so as to form a first region A1, and each electrode group of the first electrode portion 330 can overlap with each electrode group of the second electrode portion 360 in the direction from the first substrate 310 toward the second substrate portion 380 so as to form a second region A2, and a separation region can be formed between the first region A1 and the second region A2.

[0101] More specifically, referring to FIG. 9, the first electrode portion 330 can include a plurality of electrode groups 331, 332, 333, 334 arranged to be separated from each other, and each electrode group 331, 332, 333, 334 can include a plurality of electrodes 330E arranged to be separated from each other. Although not illustrated in FIG. 8, the second electrode portion 360 can include a plurality of electrode groups that overlap with the plurality of electrode groups 331, 332, 333, 334 of the first electrode portion 330 in a direction perpendicular to the first substrate 310, respectively.

[0102] The first electrode portion 330 can include a first terminal electrode 330T1 connected to one of the plurality of electrode groups 331, 332, 333, 334 and a second terminal electrode 330T2 connected to another one of the plurality of electrode groups 331, 332, 333, 334. A connector (not illustrated) can be disposed on each of the first terminal electrode 330T1 and the second terminal electrode 330T2, and through this, it can be connected to an external power source. On the other hand, the first electrode portion 330 can further include a connection electrode portion 330C that connects at least a part of the plurality of electrode groups 331, 332, 333, 334. The connection electrode portion 330C can include, for example, at least one of a first connection electrode 330C1 disposed between the first - 1 electrode group 331 and the first - 2 electrode group 332, a second connection electrode 330C2 disposed between the first - 1 electrode group 331 and the second - 1 electrode group 333, a third connection electrode 330C3 disposed between the second - 1 electrode group 333 and the second - 2 electrode group 334, and a fourth connection electrode that connects the first - 2 electrode group 332 and the second - 2 electrode group 334. The plurality of electrode groups 331, 332, 333, 334 can be directly or indirectly connected to other electrode groups through the connection electrode portion 330C, and an electrical path can be formed through the first terminal electrode 330T1 and the second terminal electrode 330T2.

[0103] Each of the electrode groups 331, 332, 333, and 334 can be arranged leaving a hole arrangement region 310H. Although not shown, the second electrode portion 360 can also be arranged leaving a hole arrangement region corresponding to the hole arrangement region 310H. Here, the hole arrangement region 310H can mean a region formed by connecting virtual lines that are the edges arranged so as to be closest to the hole 311 of the electrode 330E arranged closest to the hole 311. The area of the hole arrangement region can be 4 times or more, preferably 6 times or more, and more preferably 8 times or more the area of the electrode 330E. According to this, the withstand voltage performance of the thermoelectric module 300 can be maintained at AC 1 kV or more.

[0104] At this time, the separation regions between the plurality of electrode groups 331, 332, 333, and 334 can correspond to the separation regions between the plurality of second substrates 381, 382, 383, and 384, and the separation distance between the plurality of electrode groups 331, 332, 333, and 334 may be larger than the separation distance between the plurality of electrodes 330E within each of the electrode groups 331, 332, 333, and 334.

[0105] For example, when the first electrode portion 330 includes the first - 1 electrode group 331, the first - 2 electrode group 332 arranged to be separated from the first - 1 electrode group 331 in the first direction, the second - 1 electrode group 333 arranged to be separated from the first - 1 electrode group 331 in the second direction perpendicular to the first direction, and the second - 2 electrode group 334 arranged to be separated from the second - 1 electrode group 333 in the first direction and separated from the first - 2 electrode group 332 in the second direction, the first - 1 electrode group 331 and the second - 1 electrode group 333 are separated from the first - 2 electrode group 332 and the second - 2 electrode group 334 in the first direction, and the first - 1 electrode group 331 and the first - 2 electrode group 332 can be separated from the second - 1 electrode group 333 and the second - 2 electrode group 334 in the second direction.

[0106] According to this, when the first substrate 310 on which the first electrode portion 330 is mounted is exposed to a high temperature during the manufacturing process, the first substrate 310 can be bent in a W shape not only in the first direction but also in the second direction centering on the separation region of each electrode group. Such a W-shaped bending phenomenon can reduce the bonding force between the thermoelectric module 300 and the cooling unit C, and can reduce the long-term reliability, durability, and power generation performance of the thermoelectric module 300.

[0107] According to an embodiment of the present invention, in order to improve the bending phenomenon of the first substrate 310, a dummy portion is further arranged in the separation region between the electrode groups.

[0108] Referring to FIG. 10, the dummy portion 900 can be further arranged on the first substrate 310 at at least a part of the separation region between the first region A1 and the second region A2. For example, the dummy portion 900 can be arranged on the side surfaces of the plurality of electrode groups 331, 332, 333, 334 at at least a part of the separation region between the plurality of electrode groups (331, 332, 333, 334). Thus, when the dummy portion 900 is arranged, stress can be uniformly applied to the entire first substrate 310, so that the W-shaped bending phenomenon can be prevented.

[0109] For example, the first dummy portion 910 can be arranged between the first-1 electrode group 331 and the first-2 electrode group 332. And the second dummy portion 920 can be arranged between the second-1 electrode group 333 and the second-2 electrode group 334. And the third dummy portion 930 can be arranged between the first-1 electrode group 331 and the first-2 electrode group 332 and the second-1 electrode group 333 and the second-2 electrode group 334. At this time, the first dummy portion 910 and the second dummy portion 920 can be separated by the third dummy portion 930. Or a first connection electrode 330C1 arranged between the first-1 electrode group 331 and the first-2 electrode group 332 is arranged between the first dummy portion 910 and the third dummy portion 930, and a third connection electrode 330C3 arranged between the second-1 electrode group 333 and the second-2 electrode group 334 can be arranged between the second dummy portion 920 and the third dummy portion 930.

[0110] According to this, when the first substrate 310 is exposed to high temperature, stress is applied uniformly to the entire first substrate 310, so that the W-shaped bending phenomenon of the first substrate 310 can be minimized.

[0111] At this time, at least one of the first dummy portion 910, the second dummy portion 920, and the third dummy portion 930 may include a plurality of dummy structures having the same shape and size as each electrode 330E included in each electrode group and arranged to be separated from each other.

[0112] According to this, when the first substrate 310 is exposed to high temperature, stress is applied uniformly to the entire first substrate 310, so that the W-shaped bending phenomenon of the first substrate 310 can be minimized, and the design and arrangement of the dummy portion 900 are easy in the manufacturing process.

[0113] At this time, each dummy structure may be a metal layer. For example, the metal layer has the same material, shape, and size as the electrode 330E, but no thermoelectric leg is arranged on the metal layer, and the metal layer may not be electrically connected to other electrodes 330E. According to this, the design and arrangement of the dummy portion 900 are easy in the manufacturing process.

[0114] Alternatively, each dummy structure may be a resin layer. For example, the resin layer may include at least one of an epoxy resin and a polyimide resin. Since such a resin layer has heat resistance, it can prevent heat conduction between each electrode group and improve the heat conduction efficiency between the electrodes in each electrode group and the first substrate. Also, since such a resin layer has insulation performance, the withstand voltage performance on the first substrate 310 side can be improved.

[0115] On the other hand, according to an embodiment of the present invention, when the first electrode portion 330 disposed on the first substrate 310 includes the first terminal electrode 330T1 and the second terminal electrode 330T2, a separate configuration may be required for the withstand voltage performance on the first substrate 310 side.

[0116] Accordingly, according to an embodiment of the present invention, the first insulating layer 320 disposed on the first substrate 310 may be a plurality of insulating layers. For example, the first - 1 insulating layer 321 is disposed on the first substrate 310, the first - 2 insulating layer 322 is disposed on the first - 1 insulating layer 321, and the first electrode portion 330 and the dummy portion 900 may be disposed on the first - 2 insulating layer 322. As shown in the figure, the first - 1 insulating layer 321 is disposed on the front surface of the first substrate 310, and the first - 2 insulating layer 322 may be disposed only in the region where the first electrode portion 330 is disposed. The content regarding each of the first - 1 insulating layer 321 and the first - 2 insulating layer 322 may be applied identically to the content regarding each of the first insulating layer 172 and the second insulating layer 174 described with reference to FIG. 5.

[0117] FIG. 11 is a perspective view of a thermoelectric module according to another embodiment of the present invention, and FIG. 12 is a cross - sectional view of the thermoelectric module of FIG. 11. Duplicate descriptions of the same content as that described with reference to FIGS. 1 - 10 are omitted.

[0118] Referring to FIGS. 11 - 12, an insulator 1000 may be further disposed in the separation region between the plurality of second substrates 381, 382, 383, 384. According to this, the insulator 1000 can join between the plurality of second substrates 381, 382, 383, 384, and accordingly, the separation region between the plurality of second substrates 381, 382, 383, 384 can be sealed.

[0119] At this time, the insulator 1000 may be disposed so as to extend from the separation region between the plurality of second substrates 381, 382, 383, 384 to the upper surface of the dummy portion 900. Or the insulator 1000 and the dummy portion 900 may be integrally formed. According to this, problems such as penetration of external foreign substances or moisture into the P - type thermoelectric leg 340 and the N - type thermoelectric leg 350 between the first electrode portion 330 and the second electrode portion 360 can be prevented, and insulation, sealing, and heat insulation between the first substrate 310 and the second substrate portion 380 can be maintained.

[0120] FIG. 13 shows a joining structure between a heat sink and a second substrate in a thermoelectric module according to an embodiment of the present invention.

[0121] Referring to FIG. 13, the thermoelectric element 300 can be fastened by a plurality of coupling members 400. For example, when the heat sink 390 is disposed on the second substrate 380, the plurality of coupling members 400 can fasten the heat sink 390 and the second substrate 380, or fasten the heat sink 390, the second substrate 380 and a first substrate (not shown), or fasten the heat sink 390, the second substrate 380, the first substrate (not shown) and a cooling unit (not shown), or fasten the second substrate 380, the first substrate (not shown) and the cooling unit (not shown), or fasten the second substrate 380 and the first substrate (not shown). Alternatively, the first substrate (not shown) and the cooling unit (not shown) may be connected through other fastening members outside the effective area on the first substrate (not shown).

[0122] For this purpose, through holes S through which the coupling members 400 penetrate may be formed in the heat sink 390, the second substrate 380, the first substrate (not shown), and the cooling unit (not shown). Here, a separate insulating insertion member 410 may be further disposed between the through hole S and the coupling member 400. The separate insulating insertion member 410 may be an insulating insertion member surrounding the outer peripheral surface of the coupling member 400 or an insulating insertion member surrounding the wall surface of the through hole S. According to this, it is possible to increase the insulation distance of the thermoelectric element.

[0123] On the other hand, the shape of the insulating insertion member 410 may be as illustrated in FIGS. 13(a) and 13(b).

[0124] Referring to FIG. 13(a), the diameter d2’ of the through-hole S on the first surface of the second substrate 280 that contacts the second electrode can be the same as the diameter of the through-hole on the first surface of the first substrate that contacts the first electrode. At this time, due to the shape of the insulating insertion member 410, the diameter d2’ of the through-hole S formed on the first surface of the second substrate 380 may be different from the diameter d2 of the through-hole S formed on the second surface, which is the opposite surface of the first surface. Although not shown, when the insulating insertion member 410 is disposed only on a part of the upper surface of the second substrate 380 without forming a step in the through-hole S region, or when the insulating insertion member 410 is disposed so as to extend from the upper surface of the second substrate 380 to a part or all of the wall surface of the through-hole S, the diameter d2’ of the through-hole S formed on the first surface of the second substrate 380 may be the same as the diameter d2 of the through-hole S formed on the second surface, which is the opposite surface of the first surface.

[0125] Referring to FIG. 13(b), due to the shape of the insulating insertion member 410, the diameter d2’ of the through-hole S on the first surface of the second substrate 380 that contacts the second electrode may be larger than the diameter of the through-hole on the first surface of the first substrate that contacts the first electrode. At this time, the diameter d2’ of the through-hole S on the first surface of the second substrate 380 can be 1.1 to 2.0 times the diameter of the through-hole on the first surface of the first substrate. If the diameter d2’ of the through-hole S on the first surface of the second substrate 380 is less than 1.1 times the diameter of the through-hole on the first surface of the first substrate, the insulating effect of the insulating insertion member 410 is negligible, so dielectric breakdown of the thermoelectric element may be caused. If the diameter d2’ of the through-hole S on the first surface of the second substrate 380 exceeds 2.0 times the diameter of the through-hole on the first surface of the first substrate, the size of the region occupied by the through-hole S will relatively increase, resulting in a decrease in the effective area of the second substrate 380, and the efficiency of the thermoelectric element may decrease.

[0126] And, due to the shape of the insulating insertion member 410, the diameter d2’ of the through-hole S formed on the first surface of the second substrate 380 may be different from the diameter d2 of the through-hole S formed on the second surface, which is the opposite surface of the first surface. As described above, when no step is formed in the through-hole S region of the second substrate 380, the diameter d2’ of the through-hole S formed on the first surface of the second substrate 380 may be the same as the diameter d2 of the through-hole S formed on the second surface, which is the opposite surface of the first surface.

[0127] The results of experiments on the improvement effect of the bending of the first substrate in the thermoelectric element according to the embodiments of the present invention will be described below.

[0128] FIG. 14a is a top view of the substrate and electrode portions of the thermoelectric element according to the comparative example, FIG. 14b is a top view of the substrate and electrode portions of the thermoelectric element according to Example 1, FIG. 14c is a top view of the substrate and electrode portions of the thermoelectric element according to Example 2, and FIG. 14d is a top view of the substrate and electrode portions of the thermoelectric element according to Example 3.

[0129] As shown in FIG. 14a, when the dummy portion is not arranged in the separation region between the plurality of electrode groups, W-shaped bending occurs in both the lateral and longitudinal directions of the first substrate. In particular, it was found that the bending width in the lateral direction is 135 μm, and the bending width in the longitudinal direction is 207 μm. Here, the bending width means the height difference between the lowest point and the highest point in a direction perpendicular to the plane direction of the first substrate.

[0130] On the contrary, as shown in FIG. 14b, when the first dummy portion 910 is arranged in the separation region between the first - 1 electrode group 331 and the first - 2 electrode group 332 among the plurality of electrode groups, and the second dummy portion 920 is arranged in the separation region between the second - 1 electrode group 333 and the second - 2 electrode group 334, U-shaped bending occurs in the lateral direction of the first substrate, and the bending width in the lateral direction also decreases to 100 μm. And although W-shaped bending occurs in the longitudinal direction of the first substrate, it can be seen that the bending width in the longitudinal direction is 138 μm, which is significantly improved compared with the comparative example.

[0131] Also, as shown in FIG. 14c, when the third dummy portion 930 is arranged between the first - 1 electrode group 331 and the first - 2 electrode group 332 and the second - 1 electrode group 333 and the second - 2 electrode group 334 among the plurality of electrode groups, U-shaped bending occurs in the lateral direction of the first substrate, and the bending width in the lateral direction also significantly decreases to 83 μm. And although W-shaped bending occurs in the longitudinal direction of the first substrate, it can be seen that the bending width in the longitudinal direction is 182 μm, which is improved compared with the comparative example.

[0132] Also, as shown in FIG. 14d, when all of the first dummy portion 910, the second dummy portion 920, and the third dummy portion 930 are arranged in the separation regions between the plurality of electrode groups, it can be seen that U-shaped bending has occurred in both the lateral and longitudinal directions of the first substrate. Also, the width of the first substrate in the lateral direction is 73 μm, and the width in the longitudinal direction is 100 μm, and it can be seen that the bending width has been greatly improved in both the lateral and longitudinal directions compared to the comparative example.

[0133] In this way, when the bending shape and bending width of the first substrate are improved, the bonding force between the thermoelectric element and the cooling part can be increased, and accordingly, a thermoelectric element with excellent long-term reliability, durability, and power generation performance can be obtained.

[0134] So far, the example where the second substrate part is divided into four has been mainly described, but it is not limited to this, and it may be divided into two or more.

[0135] Hereinafter, various division methods of the second substrate part and the electrode arrangement structure thereby will be described.

[0136] FIG. 15 is a perspective view of a thermoelectric element according to an embodiment of the present invention, FIG. 16 is a top view of the first substrate, the insulating layer, and the plurality of first electrodes in the embodiment of FIG. 15, FIG. 17 is a perspective view of a thermoelectric element according to another embodiment of the present invention, FIG. 18 is a top view of the first substrate, the insulating layer, and the plurality of first electrodes in the embodiment of FIG. 17, FIG. 19 is a perspective view of a thermoelectric element according to still another embodiment of the present invention, and FIG. 20 is a top view of the first substrate, the insulating layer, and the plurality of first electrodes in the embodiment of FIG. 19. For the sake of convenience of explanation, duplicate explanations for the same content as that described with reference to FIGS. 1 to 14 will be omitted.

[0137] Referring to FIGS. 15 to 20, the thermoelectric element according to an embodiment of the present invention includes a first substrate 310, an insulating layer 320, a first electrode portion 330, semiconductor structures 340, 350, a second electrode portion 360, an insulating layer 370, and a second substrate portion 380. The second substrate portion 380 is divided into a plurality of second substrates, and a heat sink 390 may be disposed on each second substrate. When a voltage is applied to the thermoelectric element 300, the first substrate 310 absorbs heat by the Peltier effect and acts as a low-temperature part, and the second substrate portion 380 can release heat and act as a high-temperature part. Or when different temperatures are applied to the first substrate 310 and the second substrate portion 3800, electrons in the high-temperature region move to the low-temperature region due to the temperature difference, generating a thermoelectromotive force. This is called the Seebeck effect, and electricity can be generated in the circuit of the thermoelectric element by the thermoelectromotive force thus generated. A plurality of first through holes 311 may be formed in the first substrate 310. Similarly, a plurality of second through holes 3901 may be formed in the second substrate portion 380 and the heat sink 390, and the plurality of first through holes 311 may be disposed at positions corresponding to the plurality of second through holes 3901. Accordingly, a plurality of coupling members (not shown) can pass through the plurality of first through holes 311 and the plurality of second through holes 3901, and the first substrate 310 and the second substrate portion 3901 can be fixed by the plurality of coupling members (not shown).

[0138] For the sake of convenience, the detailed configurations of the insulating layer 320, the first electrode portion 330, the semiconductor structures 340, 350, and the second electrode portion 380 are omitted and illustrated in FIGS. 15, 17, and 19.

[0139] Generally, the coefficient of thermal expansion (CTE) of a copper substrate is about 18×10 -6 / mK, and the coefficient of thermal expansion (CTE) of a thermoelectric leg, which is a semiconductor structure, is about 17.5×10 -6is in / mK, and the thermal expansion coefficients of the first insulating layer 321 and the second insulating layer 322 are larger than those of the copper substrate and the thermoelectric legs, and the thermal expansion coefficient of the second insulating layer 322 may be larger than that of the first insulating layer 321. For example, in order to satisfy all of the bonding performance of the second insulating layer 322 and the withstand voltage performance of the first insulating layer 321, the thermal expansion coefficient of the second insulating layer 322 can be two times or more that of the first insulating layer 321.

[0140] As shown in FIGS. 16, 18, and 20, the area of the second insulating layer 322 may be smaller than the area of the first insulating layer 321. That is, the second insulating layer 322 may be disposed not on the front surface of the first insulating layer 321 but partially thereon. According to this, the bending phenomenon of the first substrate 310 due to the difference in thermal expansion coefficient between the first insulating layer 321 and the second insulating layer 322 can be improved, and the thermal stress can be relaxed. Along with this, problems such as the first electrode 330 or the semiconductor structures 340, 350 falling off or being electrically opened can be prevented, the heat transfer effect can be improved, and finally the power generation amount or the cooling characteristics of the thermoelectric element can be improved.

[0141] More specifically, the second insulating layer 322 can include a region P1 where the first electrode portion 330, the plurality of semiconductor structures 340, 350, and the second electrode portion 380 vertically overlap. Hereinafter, in this specification, the vertical direction may mean the direction (the third direction) from the first substrate 310 toward the second substrate portion 380.

[0142] Then, the second insulating layer 322 can further include protruding patterns P2 and P3 that protrude from the region P1 where the first electrode portion 330, the plurality of semiconductor structures 340 and 350, and the second electrode portion 380 vertically overlap, toward the first outer side S1 of the first substrate 310. Here, the first outer side S1 is one of the first to fourth outer sides S1 to S4 forming the first substrate 310, and can be the direction in which the terminal electrodes 330T1 and 330T2 protrude. In this specification, the terminal electrodes 330T1 and 330T2 are electrodes for connecting electric wires, and can be arranged on the same plane as the first electrode portion 321 on the second insulating layer 322. The area of each of the terminal electrodes 330T1 and 330T2 may be larger than the area of each electrode included in the first electrode portion 330. Accordingly, connectors for wire connection can be arranged on each of the terminal electrodes 330T1 and 330T2. When the terminal electrodes 330T1 and 330T2 protrude from the first electrode portion 330 toward the first outer side S1, the distance from the first outer side S1 of the first substrate 310 to the second outer side S2 facing the first outer side S1, that is, the second-direction distance, may be larger than the distance from the third outer side S3 of the first substrate 310 to the fourth outer side S4 facing the third outer side S3, that is, the first-direction distance.

[0143] According to an embodiment of the present invention, the protruding patterns P2 and P3 include a first protruding pattern P2 and a second protruding pattern P3 arranged to be separated from each other, and the first terminal electrode 330T1 can be arranged on the first protruding pattern P2, and the second terminal electrode 330T2 can be arranged on the second protruding pattern P3. According to this, since the second insulating layer 322 can be not arranged on a part of the first substrate 310, the problem that the first substrate 310 is bent by the second insulating layer 322 having a large coefficient of thermal expansion can be minimized.

[0144] More specifically, according to an embodiment of the present invention, the width L1+L2 of the protruding patterns P2 and P3 may be smaller than the width L of the region P1 where the plurality of first electrodes 330, the plurality of semiconductor structures 340 and 350, and the plurality of second electrodes 360 vertically overlap, and the protruding patterns P2 and P3 and the first outer side S1 of the first substrate 310 may be separated from each other. In this specification, the width is defined as the distance in the first direction, and the length may be defined as the distance in the second direction. According to this, since the second insulating layer 322 is not disposed in a part between the region P1 where the first electrode portion 330, the plurality of semiconductor structures 340 and 350, and the second electrode portion 360 vertically overlap and the first outer side S1 of the first substrate 310, bending of the first substrate 310 in the second direction can be reduced.

[0145] At this time, the separation distance d1 between the first protruding pattern P2 and the second protruding pattern P3 may be 0.9 to 2 times, preferably 0.95 to 1.5 times, and more preferably 0.97 to 1.2 times the distance d2 between the third outer side S3 of the first substrate 310 and the first protruding pattern P2 and the distance d3 between the fourth outer side S4 of the first substrate 310 and the second protruding pattern P3, respectively. According to this, the region where the second insulating layer 322 is not disposed between the third outer side S3 and the fourth outer side S4 of the first substrate 310 and the region where the second insulating layer 322 is not disposed between the first protruding pattern P2 and the second protruding pattern P3 act as a buffer against the thermal expansion of the protruding patterns P2 and P3 of the second insulating layer 322, so that bending of the first substrate 310 in the first direction can be reduced, and the bending of the first substrate 310 in the first direction may be symmetric with respect to the center in the first direction of the first substrate 310.

[0146] On the other hand, as described above, the protruding patterns P2 and P3 and the first outer side S1 of the first substrate 310 may be separated from each other. According to this, the region where the second insulating layer 322 is not disposed between the protruding patterns P2 and P3 and the first outer side S1 of the first substrate 310 acts as a buffer against the thermal expansion of the protruding patterns P2 and P3 of the second insulating layer 322, so that bending of the first substrate 310 in the second direction can be reduced.

[0147] At this time, the sealing member (not shown) can be arranged to contact the first insulating layer 321 on the first outer side S1 and to contact the second insulating layer 322 on the second outer side S2. That is, since the second insulating layer 322 is not arranged on the first outer side S1 of the first substrate 310, even if the length of the first substrate 310 in the second direction becomes longer due to the terminal electrodes T1 and T2, the bending of the first substrate 310 in the second direction can be reduced. At this time, the protruding lengths of the protruding patterns P2 and P3 may be larger than the lengths from the protruding patterns P2 and P3 to the first outer side S1 of the first substrate 310. According to this, since the length of the first substrate 310 in the Y direction is not unnecessarily long, the bending of the first substrate 310 in the second direction can be reduced.

[0148] On the other hand, according to an embodiment of the present invention, the first insulating layer 321 can be arranged to be separated from the edge of the first substrate 310, that is, at least a part of the first to fourth outer sides S1 to S4 of the first substrate 310. When the first insulating layer 321 is arranged to be separated from at least a part of the edge of the first substrate 310, the edge of the first substrate 310 can serve as a buffer against the thermal expansion of the first insulating layer 321, so that the bending of the first substrate 310 can be reduced. Also, exemplarily, the thermal expansion coefficient of the first insulating layer 321 may be different from the thermal expansion coefficient of the first substrate 310 and may be larger than the thermal expansion coefficient of the first substrate 310.

[0149] Similarly, the second insulating layer 322 can be arranged to be separated from at least a part of the edge of the first insulating layer 321. When the second insulating layer 322 is arranged to be separated from at least a part of the edge of the first insulating layer 321, the edge of the first insulating layer 321 can serve as a buffer against the thermal expansion of the second insulating layer 322, so that the bending of the first substrate 310 can be reduced. Also, exemplarily, the thermal expansion coefficient of the second insulating layer 322 may be larger than the thermal expansion coefficient of the first insulating layer 321.

[0150] On the other hand, the second substrate portion 380 does not necessarily overlap perpendicularly with the protruding patterns P2 and P3 of the second insulating layer 322. Since the terminal electrodes 330T1 and 330T2 are disposed on the protruding patterns P2 and P3 of the second insulating layer 322 and the connectors for wire connection are disposed on the terminal electrodes 330T1 and 330T2, when the second substrate portion 380 does not overlap perpendicularly with the protruding patterns P2 and P3 of the second insulating layer 322, wire connection through the connectors is facilitated.

[0151] As described above, the second concave surface R2 of the second insulating layer 322 can be disposed around each electrode included in the first electrode portion 330. Each electrode can have a shape in which the length in the first direction and the length in the second direction are different from each other. Therefore, the second concave surface R2 of the second insulating layer 322 can also have a plurality of shapes in which the lengths in the second direction are different from each other or the lengths in the first direction are different from each other. In the region where the first electrode portion 330 and the second electrode portion 360 overlap perpendicularly, the second concave surface R2 of the second insulating layer 324 can have a structure located between the electrodes, and flat portions instead of recesses can be located on the protruding patterns P2 and P3 of the second insulating layer 324. Therefore, the stress applied to the second insulating layer 322 by the first substrate 310 can be relaxed in the first direction and the second direction to prevent the bending phenomenon of the substrate, and the cracking and peeling phenomena of the first insulating layer 321 and the second insulating layer 322 can be prevented. However, the present invention is not limited thereto. Since the distance between the terminal electrode 330T1 and the first electrode 330 is larger than the distance between adjacent electrodes in the first electrode portion 330, in the protruding patterns P2 and P2 of the second insulating layer 322, the second concave surface R2 of the second insulating layer 322 can be shown as a flat portion, and a concave surface having a larger width in the first direction and a larger length in the second direction than the second concave surface R2 of the second insulating layer 322 disposed between adjacent electrodes in the first electrode portion 330 may be disposed. Since the second concave surface R2 of the second insulating layer 322 has different widths from each other in the region P1 where the first electrode portion 330 and the second electrode portion 360 overlap perpendicularly, and the widths of the protruding patterns P2 and P3 are also different from each other, it can have an effect of suppressing the bending of the substrate and can be effective in preventing cracking and peeling of the second insulating layer 322.

[0152] In the above-described embodiments, a configuration in which the first insulating layer 321 and the second insulating layer 322 are separately arranged has been disclosed. However, the present invention is not limited thereto, and the first insulating layer 321 and the second insulating layer 322 may be arranged as a single layer. Even when arranged as a single layer, a resin material containing an inorganic filler may be applied to ensure the above-described heat conduction characteristics and withstand voltage characteristics, but the present invention is not limited thereto. Also, even when arranged as a single layer, the pattern of the second insulating layer 322 can have the same form.

[0153] On the other hand, according to an embodiment of the present invention, in order to reduce the bending of the substrate, the second substrate portion 380 may be composed of a plurality of divided substrates with respect to one first substrate 310.

[0154] The second substrate portion 380 may be divided along the second direction as illustrated in FIG. 15, divided along the first direction as illustrated in FIG. 17, or divided along the first direction and the second direction as illustrated in FIG. 19. Here, being divided along the second direction means being divided in a direction parallel to the third outer side S3 and the fourth outer side S4 between the third outer side S3 and the fourth outer side S4 of the first substrate 310, and being divided along the first direction may mean being divided in a direction parallel to the first outer side S1 and the second outer side S2 between the first outer side S1 and the second outer side S2 of the first substrate 310.

[0155] According to an embodiment of the present invention, the first electrode portion 330 can be arranged on one first substrate 310 according to the division direction or division position of the second substrate portion 380. According to this, even if the second substrate portion 380 includes a plurality of second substrates arranged apart from each other, the first electrode portion 330, the semiconductor structures 340, 350, and the second electrode portion 360 can be electrically connected using a pair of terminal electrodes 330T1, 330T2, and the maximum number of semiconductor structures 340, 350 per unit area can be accommodated, so that high thermoelectric performance can be achieved.

[0156] Referring to FIGS. 16, 18, and 20, the first electrode portion 330 is arranged on the insulating layer 320, and the first electrode portion 330 may include a plurality of electrode groups, and each electrode group may include a plurality of first electrodes.

[0157] For example, as shown in FIGS. 15 to 16, when the second substrate portion 380 includes a second-1 substrate 380-1 and a second-2 substrate 380-2 arranged to be separated from each other along the second direction, the first electrode group G1 may be arranged to overlap perpendicularly with the second-1 substrate 380-1, and the second electrode group G2 may be arranged to overlap perpendicularly with the second-2 substrate 380-2. According to this, the first electrode group G1 and the second electrode group G2 may be divided between the third outer side S3 and the fourth outer side S4 of the first substrate 310.

[0158] The first terminal electrode 330T1 is arranged on the first electrode group G1 side, the second terminal electrode 330T2 is arranged on the second electrode group G2 side, and the first electrode group G1 and the second electrode group G2 may be connected by a connection electrode CE1. The first electrode group G1 and the second electrode group G2 may each include a plurality of first electrodes E1, E2, and the connection electrode CE1 may be arranged in the row closest to the first terminal electrode 330T1 and the second terminal electrode 330T2 among the plurality of first electrodes E1, E2 in the first electrode group G1 and the second electrode group G2. The long side of the connection electrode CE1 is longer than the long side of each first electrode E1, E2, and at least a part of the connection electrode CE1 may not overlap perpendicularly with the second-1 substrate 380-1 and the second-2 substrate 380-2. That is, at least a part of the connection electrode CE1 is arranged in the separation region between the second-1 substrate 380-1 and the second-2 substrate 380-2, and can connect the first electrode group G1 and the second electrode group G2.

[0159] As shown in FIGS. 17 to 18, when the second substrate portion 380 includes a second-3 substrate 380-3 and a second-4 substrate 380-4 arranged to be separated from each other along the first direction, the third electrode group G3 may be arranged to overlap perpendicularly with the second-3 substrate 380-3, and the fourth electrode group G4 may be arranged to overlap perpendicularly with the second-4 substrate 380-4. According to this, the third electrode group G3 and the fourth electrode group G4 may be divided between the first outer side S1 and the second outer side S2 of the first substrate 310.

[0160] Here, all of the first terminal electrode 330T1 and the second terminal electrode 330T2 can be arranged on the side of the third electrode group G3, and the two connection electrodes CE2 and CE3 arranged adjacent to each other can connect the third electrode group G3 and the fourth electrode group G4. The two connection electrodes CE2 and CE3 can be the connection electrode CE2 and the connection electrode CE3 arranged adjacent to and side by side with the connection electrode CE2. In this specification, the two connection electrodes being arranged adjacent to and side by side with each other may mean that one long side of one of the two connection electrodes and one long side of the other are arranged adjacent to and facing each other. That is, it may mean that the two connection electrodes are arranged parallel to each other in the long side direction. Although not shown in the figure, at least a part of the two connection electrodes CE2 and CE3 does not overlap perpendicularly with the second-third substrate 380-3 and the second-fourth substrate 380-4, and can be arranged in the separation region between the second-third substrate 380-3 and the second-fourth substrate 380-4.

[0161] At this time, the two connection electrodes CE2 and CE3 can be arranged in the two columns closest to the outermost column among the plurality of first electrodes E3 and E4 in the third electrode group G3 and the fourth electrode group G4.

[0162] In FIG. 18, although the two connection electrodes CE2 and CE3 are shown as being arranged in the two columns closest to the outermost column on the left side of the plurality of first electrodes E3 and E4 in the third electrode group G3 and the fourth electrode group G4, it is not limited thereto. The two connection electrodes connecting the two electrode groups divided between the first outer side S1 and the second outer side S2 of the first substrate 310 may be arranged adjacent to and side by side with each other in the two columns closest to the outermost column on the right side of the plurality of first electrodes in the two electrode groups.

[0163] Referring to FIGS. 19 to 20, when the second substrate portion 380 includes the second-11 substrate 380-11, the second-12 substrate 380-12, the second-21 substrate 380-21, and the second-22 substrate 380-22 that are arranged to be separated from each other along the first direction and the second direction, the eleventh electrode group G11 is arranged to overlap perpendicularly with the second-11 substrate 380-11, the twelfth electrode group G12 is arranged to overlap perpendicularly with the second-12 substrate 380-12, the twenty-first electrode group G21 is arranged to overlap perpendicularly with the second-21 substrate 380-21, and the twenty-second electrode group G22 may be arranged to overlap perpendicularly with the second-22 substrate 380-22. According to this, the eleventh electrode group G11 and the twelfth electrode group G12 are divided between the twenty-first electrode group G21 and the twenty-second electrode group G22 and the first outer side S1 and the second outer side S2 of the first substrate 310, and the eleventh electrode group G11 and the twenty-first electrode group G21 may be divided between the twelfth electrode group G12 and the twenty-second electrode group G22 and the third outer side S3 and the fourth outer side S4 of the first substrate 310.

[0164] Here, the first terminal electrode 330T1 is arranged on the eleventh electrode group G11 side, the second terminal electrode 330T2 is arranged on the twelfth electrode group G12 side, and the eleventh electrode group G11 and the twelfth electrode group G12 may be connected by the connection electrode CE1. The eleventh electrode group G11 and the twelfth electrode group G12 may each include a plurality of first electrodes E11, E12, and the connection electrode CE1 may be arranged in the row closest to the first terminal electrode 330T1 and the second terminal electrode 330T2 among the plurality of first electrodes E11, E12 in the eleventh electrode group G11 and the twelfth electrode group G12. Although not shown, at least a part of the connection electrode CE1 may be arranged to overlap perpendicularly with the separation region between the second-11 substrate 380-11 and the second-12 substrate 380-12.

[0165] Then, two connecting electrodes CE2 and CE3 arranged adjacent to each other can connect the 11th electrode group G11 and the 21st electrode group G21. Although not shown in the figure, at least a part of the two connecting electrodes CE2 and CE3 may not overlap perpendicularly with the 2-11 substrate 380-11 and the 2-21 substrate 380-21, and may be arranged to overlap perpendicularly with the separation region between the 2-11 substrate 380-11 and the 2-21 substrate 380-21.

[0166] At this time, the two connecting electrodes CE2 and CE3 can be arranged side by side in the two columns closest to the outermost column among the plurality of first electrodes E11 and E21 in the 11th electrode group G11 and the 21st electrode group G21.

[0167] In FIG. 20, although the two connecting electrodes CE2 and CE3 are shown as being arranged in the two columns closest to the outermost column on the left side of the plurality of first electrodes E11 and E21 in the 11th electrode group G11 and the 21st electrode group G21, it is not limited thereto. The two connecting electrodes connecting the two electrode groups divided between the first outer side S1 and the second outer side S2 of the first substrate 310 may be arranged side by side in the two columns closest to the outermost column on the right side of the plurality of first electrodes in the two electrode groups.

[0168] Then, two connecting electrodes CE5 and CE6 arranged adjacent to each other can connect the 11th electrode group G11 and the 12th electrode group G12. As described above, since the connecting electrode CE1 is arranged in the row closest to the first terminal electrode 330T1 and the second terminal electrode 330T2 among the plurality of first electrodes E11 and E12 in the 11th electrode group G11 and the 12th electrode group G12, the two connecting electrodes CE5 and CE6 can be arranged side by side in the outermost row farthest from the first terminal electrode 330T1 and the second terminal electrode 330T2 and the row adjacent thereto among the plurality of first electrodes E11 and E12 in the 11th electrode group G11 and the 12th electrode group G12.

[0169] Similarly, two connecting electrodes CE7 and CE8 arranged adjacent to each other can connect the 21st electrode group G21 and the 22nd electrode group G22, and the two connecting electrodes CE7 and CE8 can be arranged side by side in the outermost row and the row closest to it among a plurality of first electrodes E21 and E22 in the 21st electrode group G21 and the 22nd electrode group G22.

[0170] In the embodiments of FIGS. 15 to 20, dummy portions described with reference to FIGS. 10 to 12 may be further arranged in the separation regions between the plurality of electrode groups. The dummy portions can include a plurality of dummy structures having the same shape and size as the electrodes included in each electrode group and arranged to be separated from each other. According to this, when the first substrate 310 is exposed to a high temperature, stress is applied uniformly to the entire first substrate 310, so that the bending shape of the first substrate 310 can be minimized.

[0171] As described above, the embodiment in which the second substrate portion 380 is divided into two along the first direction or divided into two along the second direction has been described, but this can also be applied to an embodiment in which the second substrate portion 380 is divided into two or more along the first direction or divided into two or more along the second direction.

[0172] According to an embodiment of the present invention, when the first row electrode group, the second row electrode group, and the third row electrode group are sequentially arranged, the first row electrode group and the second row electrode group are connected by two connecting electrodes that are adjacent and arranged side by side with each other, and the second row electrode group and the third row electrode group can be connected by two other connecting electrodes that are adjacent and arranged side by side with each other. At this time, the two connecting electrodes and the two other connecting electrodes can be arranged in the two columns that are the closest to each other in the outermost column of the first electrode portion. For example, when the two connecting electrodes connecting the first row electrode group and the second row electrode group are arranged in the two columns that are the closest to each other in the left outermost column of the first electrode portion, the two other connecting electrodes connecting the second row electrode group and the third row electrode group can be arranged in the two columns that are the closest to each other in the right outermost column of the first electrode portion. On the contrary, when the two connecting electrodes connecting the first row electrode group and the second row electrode group are arranged in the two columns that are the closest to each other in the right outermost column of the first electrode portion, the two other connecting electrodes connecting the second row electrode group and the third row electrode group can be arranged in the two columns that are the closest to each other in the left outermost column of the first electrode portion.

[0173] According to an embodiment of the present invention, when the first column electrode group, the second column electrode group, and the third column electrode group are sequentially arranged, the first column electrode group, the second column electrode group, and the third column electrode group can be connected by at least one connecting electrode. At this time, the at least one connecting electrode can be arranged in the outermost row within the first column electrode group, the second column electrode group, and the third column electrode group.

[0174] Figures 21 to 24 are schematic diagrams of the electrode arrangement included in the thermoelectric element according to the embodiment of the present invention. For the convenience of explanation, the detailed electrode arrangement is not shown, and only the connection direction of the electrodes is schematically shown.

[0175] Referring to FIG. 21, the first electrode group G11 and the second electrode group G12 are divided between the second electrode group G21 and the second electrode group G22 and the first outer side S1 and the second outer side S2 of the first substrate 310, and the second electrode group G21 and the second electrode group G22 may be divided between the third electrode group G31 and the third electrode group G32 and the first outer side S1 and the second outer side S2 of the first substrate 110.

[0176] And the first electrode group G11, the second electrode group G21, and the third electrode group G31 may be divided between the second electrode group G12, the second electrode group G22, and the third electrode group G32 and the third outer side S3 and the fourth outer side S4 of the first substrate 110.

[0177] Referring to FIG. 22, the first electrode group G11 and the second electrode group G12 are divided between the second electrode group G21 and the second electrode group G22 and the first outer side S1 and the second outer side S2 of the first substrate 310, the second electrode group G21 and the second electrode group G22 are divided between the third electrode group G31 and the third electrode group G32 and the first outer side S1 and the second outer side S2 of the first substrate 310, and the third electrode group G31 and the third electrode group G32 may be divided between the fourth electrode group G41 and the fourth electrode group G42 and the first outer side S1 and the second outer side S2 of the first substrate 310.

[0178] And the first electrode group G11, the second electrode group G21, the third electrode group G31, and the fourth electrode group G41 may be divided between the second electrode group G12, the second electrode group G22, the third electrode group G32, and the fourth electrode group G42 and the third outer side S3 and the fourth outer side S4 of the first substrate 310.

[0179] Here, the first terminal electrode 330T1 and the second terminal electrode 330T2 are respectively arranged in different electrode groups, for example, on the side of the 11th electrode group G11 and the side of the 12th electrode group G12, and the 11th electrode group G11 and the 12th electrode group G12 can be connected by the connection electrode CE1. At this time, the connection electrode EC1 can be arranged in the row closest to the first terminal electrode 330T1 and the second terminal electrode 330T2.

[0180] Referring to FIG. 23, the 11th electrode group G11, the 12th electrode group G12, and the 13th electrode group G13 can be divided between the 21st electrode group G21, the 22nd electrode group G22, the 23rd electrode group G23 and the first outer sides S1 and S2 of the first substrate 310.

[0181] Then, the 11th electrode group G11 and the 21st electrode group G21 are divided between the 12th electrode group G12 and the 22nd electrode group G22 and the third outer side S3 and the fourth outer side S4 of the first substrate 310, and the 12th electrode group G12 and the 22nd electrode group G22 can be divided between the 13th electrode group G13 and the 23rd electrode group G23 and the third outer side S3 and the fourth outer side S4 of the first substrate 110.

[0182] Here, the first terminal electrode 330T1 and the second terminal electrode 330T2 are respectively arranged in different electrode groups, for example, on the side of the 11th electrode group G11 and the side of the 13th electrode group G13, the 11th electrode group G11 and the 12th electrode group G12 are connected by the connection electrode CE11, and the 12th electrode group G12 and the 13th electrode group G13 can be connected by the connection electrode CE12.

[0183] At this time, the connection electrodes CE11 and CE12 can be arranged in the row closest to the first terminal electrode 330T1 and the second terminal electrode 330T2.

[0184] Similarly, referring to FIG. 24, the 11th electrode group G11, the 12th electrode group G12, the 13th electrode group G13, and the 14th electrode group G14 can be divided between the 21st electrode group G21, the 22nd electrode group G22, the 23rd electrode group G23, and the 24th electrode group G24 and the first outer side S1 and the second outer side S2 of the first substrate 310.

[0185] And the 11th electrode group G11 and the 21st electrode group G21 are divided between the 12th electrode group G12 and the 22nd electrode group G22 and the third outer side S3 and the fourth outer side S4 of the first substrate 110, the 12th electrode group G12 and the 22nd electrode group G22 are divided between the 13th electrode group G13 and the 23rd electrode group G23 and the third outer side S3 and the fourth outer side S4 of the first substrate 110, and the 13th electrode group G13 and the 23rd electrode group G23 can be divided between the 14th electrode group G14 and the 24th electrode group G24 and the third outer side S3 and the fourth outer side S4 of the first substrate 310.

[0186] Here, the first terminal electrode 330T1 and the second terminal electrode 330T2 are respectively arranged on different electrode groups, for example, on the 11th electrode group G11 side and the 14th electrode group G14 side. The 11th electrode group G11 and the 12th electrode group G12 are connected by a connection electrode CE11, the 12th electrode group G12 and the 13th electrode group G13 are connected by a connection electrode CE12, and the 13th electrode group G13 and the 14th electrode group G14 can be connected by a connection electrode CE13.

[0187] At this time, the connection electrodes CE11, CE12, and CE13 can be arranged in the row closest to the first terminal electrode 330T1 and the second terminal electrode 330T2.

[0188] Referring to FIGS. 21 to 22, one of the first row electrode groups G11, G12 is connected by two connection electrodes CE21, CE22 arranged adjacent to each other and side by side with one of the second row electrode groups G21, G22, and one of the second row electrode groups G21, G22 can be connected by the other two connection electrodes CE31, CE32 arranged adjacent to each other and side by side with one of the third row electrode groups G31, G32.

[0189] At this time, if the two connection electrodes CE21, CE22 connect the 11th electrode group G11 and the 21st electrode group G21 arranged on the 3rd outer side S3 side of the first substrate 310, the other two connection electrodes CE31, CE32 can connect the 22nd electrode group G22 and the 32nd electrode group G32 arranged on the 4th outer side S4 side of the first substrate 310. At this time, the two connection electrodes CE21, CE22 are arranged side by side in the two columns closest to the left outermost column of the 11th electrode group G11 and the 21st electrode group G21, and the other two connection electrodes CE31, CE32 can be arranged side by side in the two columns closest to the right outermost column of the 22nd electrode group G22 and the 32nd electrode group G32.

[0190] Or if the two connection electrodes CE21, CE22 connect the 12th electrode group G12 and the 22nd electrode group G22 arranged on the 4th outer side S4 side of the first substrate 310, the other two connection electrodes CE31, CE32 can connect the 21st electrode group G21 and the 31st electrode group G31 arranged on the 3rd outer side S3 side of the first substrate 310. At this time, the two connection electrodes CE21, CE22 are arranged in the two columns closest to the right outermost column of the 12th electrode group G12 and the 22nd electrode group G22, and the other two connection electrodes CE31, CE32 can be arranged in the two columns closest to the left outermost column of the 21st electrode group G21 and the 31st electrode group G31.

[0191] Referring to FIGS. 21 to 24, the first column electrode groups G11, G21, G31, G41 can be connected by two connection electrodes CE41, CE42 arranged adjacent to and in parallel with the second column electrode groups G12, G22, G32, G42. Similarly, the second column electrode groups G12, G13 can be connected by two other connection electrodes CE51, CE52 arranged adjacent to and in parallel with the third column electrode groups G13, G23.

[0192] At this time, the two connection electrodes CE41, CE42 can be arranged in the outermost row of the first column electrode groups G11, G21, G31, G41, and the two other connection electrodes CE51, CE52 can be arranged in the outermost row of the second column electrode groups G12, G13.

[0193] According to such an electrode arrangement structure, even when the second substrate portion 380 is divided into a plurality of parts, the maximum number of thermoelectric legs per unit area can be accommodated, so that high thermoelectric efficiency can be achieved, and the first electrode portion, the semiconductor structure, and the second electrode portion can be electrically connected using a pair of terminal electrodes.

[0194] Although not shown, when the thermoelectric element according to an embodiment of the present invention is applied to a power generation device utilizing the Seebeck effect, the thermoelectric element can be coupled to a first fluid flow portion and a second fluid flow portion. The first fluid flow portion is disposed on one of the first substrate and the second substrate of the thermoelectric element, and the second fluid flow portion can be disposed on the other one of the first substrate and the second substrate of the thermoelectric element. A flow path can be formed in at least one of the first fluid flow portion and the second fluid flow portion so that at least one of the first fluid and the second fluid flows. Optionally, at least one of the first fluid flow portion and the second fluid flow portion is omitted, and at least one of the first fluid and the second fluid may flow directly to the substrate of the thermoelectric element. For example, the first fluid can flow adjacent to one of the first substrate and the second substrate, and the second fluid can flow adjacent to the other one. At this time, the temperature of the second fluid may be even higher than the temperature of the first fluid. Accordingly, the first fluid flow portion may be referred to as a cooling portion. As another example, the temperature of the first fluid may be even higher than the temperature of the second fluid. Accordingly, the second fluid flow portion may be referred to as a cooling portion. The heat sink 390 can be connected to the substrate on the side where the fluid at a higher temperature among the first fluid flow portion and the second fluid flow portion flows. The absolute value of the temperature difference between the first fluid and the second fluid can be 40 °C or more, preferably 70 °C or more, and more preferably 95 °C to 185 °C.

[0195] Although the preferred embodiments of the present invention have been described above with reference to the preferred embodiments, those skilled in the relevant art will understand that the present invention can be variously modified and changed without departing from the spirit and scope of the present invention described in the following claims.

Claims

1. A first substrate; An insulating layer disposed on the first substrate; A first electrode portion disposed on the insulating layer; A first terminal electrode and a second terminal electrode disposed on the insulating layer and protruding from the first electrode portion toward the first outside of the first substrate; A semiconductor structure disposed on the first electrode portion; A second electrode portion disposed on the semiconductor structure; and A second substrate portion disposed on the second electrode portion, The second substrate portion includes a plurality of second substrates arranged to be separated from each other; The first electrode portion Includes a plurality of electrode groups vertically overlapping with each of the plurality of second substrates; and Includes a connecting electrode portion connecting two different electrode groups among the plurality of electrode groups, The long side of the connecting electrode portion is longer than the long side of the first electrode included in the plurality of electrode groups, At least a part of the connecting electrode portion is arranged so as not to vertically overlap with the plurality of second substrates, The plurality of electrode groups include a first electrode group and a second electrode group divided between the first outside and a second outside facing the first outside; The first electrode group includes a first - 1 electrode group and a first - 2 electrode group divided between a third outside perpendicular to the first outside and a fourth outside facing the third outside; The second electrode group includes a second - 1 electrode group and a second - 2 electrode group divided between the third outside and the fourth outside; One end of the first terminal electrode is disposed in the first - 1 electrode group, and one end of the second terminal electrode is disposed in the first - 2 electrode group; The first - 1 electrode group and the second - 1 electrode group are connected by two connecting electrodes; The second - 1 electrode group and the second - 2 electrode group are connected by two connecting electrodes; The first - 1 electrode group and the first - 2 electrode group are connected by three connecting electrodes; A thermoelectric element in which the first - 2 electrode group and the second - 2 electrode group are not directly connected by a connecting electrode.

2. The thermoelectric element according to Claim 1, wherein one of the three connecting electrodes connecting the first - 1 electrode group and the first - 2 electrode group is arranged in the row closest to the first terminal electrode and the second terminal electrode.

3. The thermoelectric element according to claim 1, wherein two connecting electrodes connecting the first - 1 electrode group and the second - 1 electrode group are arranged adjacent to each other and side by side.

4. The thermoelectric element according to claim 3, wherein two connecting electrodes connecting the first - 1 electrode group and the second - 1 electrode group are arranged in two columns that are the two most adjacent columns in the outermost row within the first - 1 electrode group and the second - 1 electrode group.

5. The insulating layer includes a first insulating layer disposed on the first substrate and a second insulating layer disposed on the first insulating layer and having an area smaller than the area of the first insulating layer. The thermoelectric element according to claim 1, wherein the second insulating layer includes an overlapping region that overlaps perpendicularly with the second substrate portion and a protruding pattern that protrudes from the overlapping region toward the first outer side of the first substrate.

6. The protruding pattern includes a first protruding pattern and a second protruding pattern arranged so as to be spaced apart from each other. The thermoelectric element according to claim 5, wherein the first terminal electrode is disposed on the first protruding pattern and the second terminal electrode is disposed on the second protruding pattern.

7. The plurality of electrode groups are arranged so as to be spaced apart from each other on the insulating layer. The thermoelectric element according to claim 1, further including a dummy portion disposed between the plurality of electrode groups on the insulating layer.

8. The thermoelectric element according to claim 7, wherein the dummy portion includes a plurality of dummy structures having the same shape and size as each electrode included in each of the plurality of electrode groups and arranged so as to be spaced apart from each other.

9. The thermoelectric element according to claim 8, wherein each dummy structure is a metal layer or a resin layer.

10. The thermoelectric element according to claim 7, wherein the dummy portion includes a first dummy portion disposed between the first - 1 electrode group and the first - 2 electrode group, a second dummy portion disposed between the second - 1 electrode group and the second - 2 electrode group, and a third dummy portion disposed between the first electrode group and the second electrode group.

11. The thermoelectric element according to claim 10, wherein the first dummy portion and the second dummy portion are arranged so as to be spaced apart from each other.

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