Photovoltaic conversion device and flying object

Abstract

To solve a problem in which it is desired to effectively utilize light in an ultraviolet-light range in a case where a solar cell is loaded on a flying body which flies in the stratosphere.SOLUTION: A photoelectric conversion device comprises: a photoelectric conversion element for converting optical energy of incident light into electric energy; a first wavelength conversion layer which is disposed in contact with a light-receiving plane of the photoelectric conversion element; and a second wavelength conversion layer disposed at the side of a face of the first wavelength conversion layer opposite a face in contact with the photoelectric conversion element. The first wavelength conversion layer includes a first wavelength conversion material which converts a wavelength of light in a first wavelength region. The second wavelength conversion layer includes a second wavelength conversion material which converts a wavelength of light in a second wavelength region. An upper limit value of the first wavelength region is different from an upper limit value of the second wavelength region and / or a lower limit value of the first wavelength region is different from a lower limit value of the second wavelength region.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a photoelectric conversion device and an aircraft. [Background technology]

[0002] Patent Documents 1 to 8 disclose solar cells equipped with a wavelength conversion layer containing one or more wavelength conversion substances. [Prior art document] [Patent documents] [Patent Document 1] Japanese Patent Application Laid-Open No. 07-142752 [Patent Document 2] JP 2016-145295 A [Patent Document 3] JP 2019-215451 A [Patent Document 4] JP 2019-050381 A [Patent Document 5] JP 2022-056319 A [Patent Document 6] JP ​​2013-069728 A [Patent Document 7] JP 2013-123037 A [Patent Document 8] JP 2012-142346 A Summary of the Invention [Problem to be solved by the invention]

[0003] When a solar cell is installed in an environment of air mass (sometimes abbreviated as AM) 0, such as the stratosphere or outside the atmosphere, the amount of ultraviolet light incident on the solar cell increases compared to when the solar cell is installed on the ground (for example, in an environment of AM1 or AM1.5). When a solar cell is used in an environment of AM0, it is desirable to effectively utilize light in the ultraviolet range. In particular, when the solar cell is installed on an aircraft flying in the stratosphere, it is desirable to develop a solar cell that is lightweight and has excellent power generation efficiency. [Means for solving the problem]

[0004] In a first aspect of the present invention, a photoelectric conversion device is provided. The photoelectric conversion device includes, for example, a photoelectric conversion element that converts the light energy of incident light into electrical energy. The photoelectric conversion device includes, for example, a first wavelength conversion layer arranged in contact with a light receiving surface of the photoelectric conversion element. The photoelectric conversion device includes, for example, a second wavelength conversion layer arranged on the surface of the first wavelength conversion layer opposite to the surface in contact with the photoelectric conversion element. In the photoelectric conversion device, the first wavelength conversion layer includes, for example, a first wavelength conversion material that converts the wavelength of light in a first wavelength region. In the photoelectric conversion device, the second wavelength conversion layer includes, for example, a second wavelength conversion material that emits light and converts the wavelength of light in a second wavelength region. In the photoelectric conversion device, for example, an upper limit value of the first wavelength region is different from an upper limit value of the second wavelength region, and / or a lower limit value of the first wavelength region is different from a lower limit value of the second wavelength region.

[0005] In any of the above photoelectric conversion devices, the first wavelength region may include a third wavelength region in the range of 100 nm to 400 nm. In any of the above photoelectric conversion devices, the second wavelength region may include a fourth wavelength region in the range of 100 nm to 400 nm, and in any of the above photoelectric conversion devices, for example, the upper limit value of the third wavelength region is different from the upper limit value of the fourth wavelength region and / or the lower limit value of the third wavelength region is different from the lower limit value of the fourth wavelength region.

[0006] In any of the above photoelectric conversion devices, the first wavelength conversion layer may include a first resin and a first wavelength conversion material. In any of the above photoelectric conversion devices, the second wavelength conversion layer may include a second resin and a second wavelength conversion material. In any of the above photoelectric conversion devices, the first resin and the second resin may be different in type and / or composition. In any of the above photoelectric conversion devices, the first wavelength conversion layer may have a higher refractive index than the second wavelength conversion layer.

[0007] In any of the above photoelectric conversion devices, the first resin may be at least one selected from the group consisting of ethylene-vinyl acetate copolymer resin (EVA), polyolefin elastomer (POE), silicone resin (SI), and ionomer resin. In any of the above photoelectric conversion devices, the second resin may be at least one selected from the group consisting of polyethylene (PE), ultra-high molecular weight polyethylene (U-PE), polymethyl methacrylic (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), fluorine-based resin, polyimide (PI), unsaturated polyester (UP), epoxy resin (EP), and silicone resin (SI).

[0008] In any of the above photoelectric conversion devices, the first wavelength conversion layer may be disposed so as to cover at least a part of the light receiving surface of the photoelectric conversion element and a side surface of the photoelectric conversion element. In any of the above photoelectric conversion devices, the first wavelength conversion layer may have a thickness of 20 μm or more and 100 μm or less.

[0009] In any of the above photoelectric conversion devices, the first wavelength conversion layer may have a thickness of less than 10 μm. In any of the above photoelectric conversion devices, the second wavelength conversion layer may be arranged so as to cover the first wavelength conversion layer arranged on the light receiving surface of the photoelectric conversion element and at least a part of the side surface of the photoelectric conversion element. In any of the above photoelectric conversion devices, the photoelectric conversion device may include an intermediate layer arranged between the first wavelength conversion layer and the second wavelength conversion layer. The intermediate layer may be arranged so as to cover the first wavelength conversion layer arranged on the light receiving surface of the photoelectric conversion element and at least a part of the side surface of the photoelectric conversion element.

[0010] In any of the above photoelectric conversion devices, the second wavelength conversion layer may have a thickness of 20 μm or more and 50 μm or less. In any of the above photoelectric conversion devices, the first wavelength conversion layer may have a transmittance of 80% or more for light of 200 nm to 450 nm. In any of the above photoelectric conversion devices, the second wavelength conversion layer may have a transmittance of 90% or more for light of 200 nm to 450 nm.

[0011] In any of the above photoelectric conversion devices, the first wavelength conversion material may include an organic phosphor. In any of the above photoelectric conversion devices, the second wavelength conversion material may include an inorganic phosphor.

[0012] In any of the above photoelectric conversion devices, the first wavelength conversion layer may be disposed in contact with the light receiving surface of the photoelectric conversion element and may have an absorption layer containing a UV absorbing material. The first wavelength conversion layer may be disposed on the surface of the UV absorbing layer opposite to the surface in contact with the photoelectric conversion element and may have a conversion layer containing the first wavelength conversion material.

[0013] In a second aspect of the present invention, an aircraft is provided. The aircraft includes, for example, any of the photoelectric conversion devices according to the first aspect. The aircraft includes, for example, a thrust generating device that generates thrust by utilizing the electric energy generated by the photoelectric conversion device.

[0014] The above summary of the invention does not list all of the necessary features of the present invention. Also, subcombinations of these features may also be inventions. [Brief description of the drawings]

[0015] [Figure 1] 1 shows a schematic diagram of an example of the system configuration of an aircraft 100. [Diagram 2] 2 shows an example of the internal configuration of a solar power generation module 112. [Diagram 3] 3 shows an example of the internal configuration of a solar power generation module 312. [Figure 4] 3 shows another example of the internal configuration of the solar power generation module 312. [Diagram 5] 5 shows an example of the internal configuration of a solar power generation module 512. [Figure 6] 5 shows another example of the internal configuration of the solar power generation module 512. [Figure 7] 7 shows an example of the internal configuration of a solar power generation module 712. [Figure 8]8 shows an example of the internal configuration of a solar power generation module 812. [Figure 9] 9 shows an example of the internal configuration of a solar power generation module 912. [Figure 10] 1 shows an example of the internal configuration of a solar power generation module 1012. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0016] According to an embodiment disclosed in the present specification, a photoelectric conversion device includes a photoelectric conversion element that converts the optical energy of incident light into electrical energy, a first wavelength conversion layer arranged in contact with a light receiving surface of the photoelectric conversion element, and a second wavelength conversion layer arranged on the surface of the first wavelength conversion layer opposite to the surface in contact with the photoelectric conversion element. The first wavelength conversion layer includes a first wavelength conversion material that converts the wavelength of light in a first wavelength region. The second wavelength conversion layer includes a second wavelength conversion material that converts the wavelength of light in a second wavelength region.

[0017] In this embodiment, the numerical range of the first wavelength region and the numerical range of the second wavelength region are different from each other. (i) The numerical range of the first wavelength region and the numerical range of the second wavelength region may be completely separated, (ii) a part of the numerical range of the first wavelength region and a part of the numerical range of the second wavelength region may overlap, (iii) the numerical range of the first wavelength region may be included within the numerical range of the second wavelength region, or (iv) the numerical range of the second wavelength region may be included within the numerical range of the first wavelength region.

[0018] In one embodiment, the upper limit of the first wavelength region is different from the upper limit of the second wavelength region. The upper limit of the first wavelength region may be greater than the upper limit of the second wavelength region. The upper limit of the first wavelength region may be less than the upper limit of the second wavelength region. In another embodiment, the lower limit of the first wavelength region is different from the lower limit of the second wavelength region. The lower limit of the first wavelength region may be greater than the lower limit of the second wavelength region. The lower limit of the first wavelength region may be less than the lower limit of the second wavelength region.

[0019] The first wavelength conversion material and the second wavelength conversion material can convert the wavelength of light by, for example, utilizing a nonlinear optical effect, an up-conversion phenomenon, a down-conversion phenomenon, etc. A material that converts the wavelength of light by utilizing the up-conversion phenomenon (sometimes referred to as an up-conversion material) is excited, for example, with light or electromagnetic waves of a specific wavelength, and emits light of a wavelength shorter than the wavelength of the light or electromagnetic waves (sometimes referred to as emitting light, emitting light, etc.). A material that converts the wavelength of light by utilizing the down-conversion phenomenon (sometimes referred to as a down-conversion material) is excited, for example, with light or electromagnetic waves of a specific wavelength, and emits light of a wavelength longer than the wavelength of the light or electromagnetic waves (sometimes referred to as converting to a longer wavelength).

[0020] The first wavelength-converting material emits fluorescence, for example, when excited by or absorbs light in a first wavelength region, and the second wavelength-converting material emits fluorescence, for example, when excited by or absorbs light in a second wavelength region.

[0021] A photoelectric conversion element converts the light energy of light (sometimes called input light) incident on the photoelectric conversion element into electrical energy, for example, by utilizing the photovoltaic effect. The conversion efficiency of a photoelectric conversion element depends on the wavelength of the input light. For example, a silicon-based photoelectric conversion element can convert light in the wavelength range from visible light to near-infrared light relatively efficiently, but cannot efficiently convert light in the wavelength range corresponding to ultraviolet light.

[0022] According to this embodiment, light incident on the photoelectric conversion device (sometimes referred to as incident light) first enters the second wavelength conversion layer, and the wavelength of at least a part of the light incident on the second wavelength conversion layer is converted by the action of the second wavelength conversion material contained in the second wavelength conversion layer.

[0023] The second wavelength conversion material converts the wavelength of light having a wavelength of, for example, 100 nm or more and 400 nm or less. The second wavelength conversion material is excited by light having a wavelength of, for example, 100 nm or more and 400 nm or less (sometimes referred to as excitation light) and emits fluorescence having a longer wavelength than the excitation light. This converts, for example, ultraviolet light contained in the incident light into light having a wavelength longer than that of the ultraviolet light. As a result, the progression of deterioration of at least one of the photoelectric conversion element, the first wavelength conversion layer, and the first wavelength conversion material is suppressed. In addition, the conversion efficiency of the photoelectric conversion element can be improved.

[0024] The second wavelength converting material may convert the wavelength of light having a longer wavelength than the light whose wavelength is converted by the first wavelength converting material. In this case, the first wavelength region and the second wavelength region may include at least a part of a wavelength region corresponding to ultraviolet light (sometimes referred to as an ultraviolet light region). Examples of the ultraviolet light region include UV-A (315 to 400 nm), UV-B (280 to 315 nm), and UV-C (100 to 280 nm). The first wavelength converting material and the second wavelength converting material may be down-conversion substances. This suppresses deterioration of the photoelectric conversion element caused by ultraviolet light contained in the incident light.

[0025] In an AM0 environment, the amount of UV-C light is greater than in a terrestrial environment. Therefore, at least one of the first wavelength region and the second wavelength region may include at least a portion of a wavelength region corresponding to UV-C. This provides a photoelectric conversion device that is particularly suitable for use in an aircraft flying in an AM0 environment.

[0026] The second wavelength conversion material may convert the wavelength of light having a shorter wavelength than the light whose wavelength is converted by the first wavelength conversion material. In one embodiment, the second wavelength region may include at least a portion of the ultraviolet light region. In other embodiments, the first wavelength region and the second wavelength region may include at least a portion of the ultraviolet light region. In these embodiments, the second wavelength region may include at least a portion of the wavelength region corresponding to UV-C. This provides a photoelectric conversion device that is particularly suitable for use in an aircraft flying in an AM0 environment.

[0027] The second wavelength conversion material may be a down-conversion material. The first wavelength conversion material and the second wavelength conversion material may be down-conversion materials. As described above, according to this embodiment, light incident on the photoelectric conversion device is incident on the second wavelength conversion layer, the first wavelength conversion layer, and the photoelectric conversion element in that order. The second wavelength conversion material contained in the second wavelength conversion layer converts the wavelength of light in the second wavelength region to the long wavelength side, so that not only the deterioration of the photoelectric conversion element due to ultraviolet rays but also the deterioration of the first wavelength conversion material due to ultraviolet rays can be suppressed.

[0028] In one embodiment, the second wavelength conversion material emits light having a wavelength at which the conversion efficiency by the photoelectric conversion element is relatively good. For example, the second wavelength conversion material emits light having a wavelength of 400 nm or more. This improves the conversion efficiency of the photoelectric conversion device. In another embodiment, the second wavelength conversion material emits light in a first wavelength region. In this case, the photoelectric conversion device may be configured such that the light emitted by the second wavelength conversion material is converted in wavelength by the first wavelength conversion material and then enters the photoelectric conversion element. Note that even in this case, the light in the first wavelength region may include light having a wavelength of 400 nm or more. This improves the conversion efficiency of the photoelectric conversion device.

[0029] The light that has passed through the second wavelength conversion layer then passes through the first wavelength conversion layer and enters the photoelectric conversion element, where the wavelength of at least a portion of the light that has passed through the first wavelength conversion layer is converted by the action of the first wavelength conversion material contained in the first wavelength conversion layer.

[0030] The light incident on the first wavelength conversion layer includes (i) incident light transmitted through the second wavelength conversion layer without being converted in wavelength by the second wavelength conversion material, and (ii) light emitted by the second wavelength conversion material. The first wavelength conversion material may convert the wavelength of the incident light, may convert the wavelength of the light emitted by the second wavelength conversion material, or may convert the wavelengths of both.

[0031] The first wavelength conversion material converts the wavelength of light having a wavelength of, for example, 100 nm or more and 400 nm or less. The first wavelength conversion material is excited by light having a wavelength of, for example, 100 nm or more and 400 nm or less (sometimes referred to as excitation light) and emits fluorescence having a longer wavelength than the excitation light. This causes ultraviolet rays contained in the light incident on the first wavelength conversion layer to be converted into light having a wavelength longer than that of the ultraviolet rays. This suppresses the progression of deterioration of at least one of the photoelectric conversion element, the first wavelength conversion layer, and the first wavelength conversion material.

[0032] The first wavelength conversion material emits light of a wavelength that provides relatively good conversion efficiency for the photoelectric conversion element, for example, which can improve the conversion efficiency of the photoelectric conversion element.

[0033] According to this embodiment, for example, the first wavelength conversion layer and the second wavelength conversion layer convert light in a wavelength region where the conversion efficiency by the photoelectric conversion element is relatively low into light in a wavelength region where the conversion efficiency by the photoelectric conversion element is relatively high. As a result, the photoelectric conversion device according to this embodiment can efficiently convert the optical energy of light incident on the photoelectric conversion device into electrical energy. As a result, the amount of power generation per unit mass of the photoelectric conversion device is improved. In particular, in a stratospheric environment, the amount of ultraviolet rays is greater than on the ground. Therefore, by mounting the photoelectric conversion device according to this embodiment on an aircraft flying in the stratosphere, the flying distance, flying time, and / or flying latitude range of the aircraft are improved.

[0034] When all wavelength converting materials contained in a photoelectric conversion device are added to a single layer, the light transmittance of the single layer may decrease. As a result, the effect of converting the wavelength of light by the wavelength converting material may also decrease. In contrast, according to the present embodiment, two or more wavelength converting materials having different conversion characteristics and / or compositions are arranged in multiple physically different layers. This allows the effect of converting the wavelength of light by the wavelength converting material to be fully exerted.

[0035] Furthermore, by using two or more types of wavelength converting materials, a wider range of light wavelengths can be converted compared to the case where a single type of wavelength converting material is used. For example, the proportion of light in the ultraviolet region contained in the incident light that is converted to light in the visible light region increases. As a result, the power generation efficiency of the photoelectric conversion device improves, and the amount of power generated per unit mass increases. Therefore, by mounting the photoelectric conversion device according to this embodiment on an aircraft flying in the stratosphere, the flight distance, flight time, and flight range (for example, the latitude range) of the aircraft are improved.

[0036] Conventionally, solar cells arranged on the ground include an encapsulation layer that protects the solar cell from oxygen and moisture, and a surface protection layer that protects the encapsulation layer from the external environment. In general, the encapsulation layer has a thickness of several hundred μm, and the surface protection layer has a thickness of several mm. In contrast, according to this embodiment, the second wavelength conversion layer has a thickness of, for example, 20 μm or more and 50 μm or less. Also, the first wavelength conversion layer has a thickness of, for example, 20 μm or more and 100 μm or less, or a thickness of less than 0.1 μm. As a result, for example, a surface protection layer having a thickness of 500 g / m 2 The following photoelectric conversion device can be provided. Therefore, by mounting the photoelectric conversion device according to this embodiment on an aircraft flying in the stratosphere, the flight distance and / or flight time of the aircraft can be improved.

[0037] According to the photovoltaic conversion device of this embodiment, for example, a solar power generation device with excellent power generation efficiency per unit mass can be realized. Solar power generation devices are known as a power generation method with low carbon dioxide emissions. In addition, solar power generation devices are, for example, brought to disaster sites and used to supply energy to disaster victims. Therefore, the photovoltaic conversion device of this embodiment can contribute to the achievement of Goal 7 "Affordable and clean energy" or Goal 13 "Take urgent action to combat climate change" of the Sustainable Development Goals (SDGs).

[0038] The present invention will be described below through embodiments of the invention, but the following embodiments do not limit the scope of the invention according to the claims. Furthermore, not all of the combinations of features described in the embodiments are necessarily essential to the solution of the invention.

[0039] In this specification, when a numerical range is expressed as "A to B", the expression means A or more and B or less. In addition, "substituted or unsubstituted" means "substituted with any substituent or not substituted with any substituent". The type of the above-mentioned substituent is not particularly limited unless otherwise stated in the specification. In addition, the number of the above-mentioned substituents is not particularly limited unless otherwise stated in the specification.

[0040] (Overview of the Aircraft 100) 1 illustrates an example of a system configuration of an aircraft 100. In this embodiment, the aircraft 100 includes a power generation system 110, a power control circuit 120, a power storage device 122, one or more electric motors 130, one or more propellers 140, one or more sensors 150, and a control device 160. In this embodiment, the power generation system 110 includes one or more solar power generation modules 112.

[0041] In this embodiment, the flying object 100 flies using electrical energy generated by the power generation system 110. In this embodiment, the electrical energy generated by the power generation system 110 may be stored in the power storage device 122. The flying object 100 may fly using the electrical energy stored in the power storage device 122. Examples of the flying object 100 include an airplane, an airship or balloon, a balloon, a helicopter, a drone, and the like.

[0042] In this embodiment, the power generation system 110 generates electric power. In this embodiment, the power generation system 110 supplies electric power to the power storage device 122 and / or the electric motor 130 via the power control circuit 120.

[0043] In this embodiment, the solar power generation module 112 generates power by converting the optical energy of light incident on the solar power generation module 112 into electrical energy. Details of the solar power generation module 112 will be described later.

[0044] In this embodiment, the power storage device 122 stores electric energy (this may be referred to as charging the power storage device 122). For example, the power storage device 122 stores electric energy generated by the power generation system 110. The power storage device 122 also releases the stored electric energy (this may be referred to as discharging the power storage device 122). For example, the power storage device 122 supplies electric power to the electric motor 130. The power storage device 122 may include a secondary battery.

[0045] In this embodiment, the power control circuit 120 controls the output of the power generated by the power generation system 110. The power control circuit 120 may control the input and output of the power of the power storage device 122. In one embodiment, the power control circuit 120 supplies the power generated by the power generation system 110 to the power storage device 122 and / or the electric motor 130. In another embodiment, the power control circuit 120 supplies the power stored in the power storage device 122 to the electric motor 130. The power control circuit 120 may control the input and / or output of the above power based on a command from the control device 160. The power control circuit 120 includes, for example, one or more switching elements that operate based on a control signal from the control device 160. The power control circuit 120 may include one or more power conversion devices that operate based on a control signal from the control device 160.

[0046] In this embodiment, the electric motor 130 receives electric energy from the power generation system 110 and / or the power storage device 122 via the power control circuit 120. The electric motor 130 rotates the propeller 140 using the electric energy received from the power generation system 110 and / or the power storage device 122. In this way, the electric motor 130 can generate propulsion force for the aircraft 100 using the electric energy generated by the power generation system 110.

[0047] In this embodiment, the sensor 150 measures various physical quantities related to the position and attitude of the flying object 100. Examples of sensors for measuring various physical quantities related to the position and attitude of the flying object 100 include a GPS signal receiver, an acceleration sensor, an angular acceleration sensor, and a gyro sensor. The sensor 150 may measure various physical quantities related to the state of the power generation system 110 and / or the power storage device 122. Examples of sensors for measuring various physical quantities related to the state of the power generation system 110 and / or the power storage device 122 include a temperature sensor, a current sensor, and a voltage sensor.

[0048] In this embodiment, the control device 160 controls the flying object 100. The control device 160 may control the output of power from the power generation system 110 by controlling the power control circuit 120. For example, the control device 160 may control the output power, output current, output voltage, etc. of the power generation system 110. The control device 160 may control the input / output of power from the power storage device 122 by controlling the power control circuit 120. For example, the control device 160 controls the output power, output current, output voltage, input power, input current, input voltage, etc. of the power storage device 122. This allows the control device 160 to control the position and attitude of the flying object 100. The control device 160 may control the position and attitude of the flying object 100 by controlling the power control circuit 120 based on the output from the sensor 150.

[0049] The power generation system 110 may be an example of a photovoltaic conversion device. The solar power generation module 112 may be an example of a photovoltaic conversion device. The electric motor 130 may be an example of a propulsion force generation device.

[0050] (Outline of Solar Power Generation Module 112) 2 is a schematic diagram showing an example of the internal configuration of the photovoltaic power generation module 112. In this embodiment, the photovoltaic power generation module 112 has, for example, a front surface 222 and a back surface 224. In this embodiment, the photovoltaic power generation module 112 includes, for example, a front surface protection layer 232, a sealing layer 234, a back surface protection layer 236, and a photoelectric conversion cell 240. In this embodiment, the photoelectric conversion cell 240 has, for example, a front surface 242, a back surface 244, and a side surface 246 connecting the front surface 242 and the back surface 244. In this embodiment, the photoelectric conversion cell 240 includes, for example, an n-type semiconductor layer 252, a p-type semiconductor layer 254, a light receiving surface electrode 256, a back surface electrode 258, a positive electrode terminal 262, and a negative electrode terminal 264.

[0051] In this embodiment, the surface protective layer 232 includes a wavelength converting material 272. The surface protective layer 232 may be a film or coating made of the wavelength converting material 272, or may be a film or coating containing the wavelength converting material 272 and a resin material.

[0052] In this embodiment, the sealing layer 234 includes a wavelength converting material 274. The sealing layer 234 may be a film or coating made of the wavelength converting material 274, or may be a film or coating containing the wavelength converting material 272 and a resin material.

[0053] In this embodiment, the surface protective layer 232 protects the sealing layer 234 from the external environment. The surface protective layer 232 protects the sealing layer 234 from, for example, oxygen. The surface protective layer 232 protects the sealing layer 234 from, for example, temperature changes or low temperatures. The surface protective layer 232 protects the sealing layer 234 from impacts due to, for example, changes in air pressure, wind pressure, and the like.

[0054] In this embodiment, the surface protection layer 232 is disposed on one of the two surfaces of the sealing layer 234, the surface (the upper surface in the drawing) opposite to the surface (the lower surface in the drawing) of the sealing layer 234 that contacts the photoelectric conversion cell 240. The two surfaces of the sealing layer 234 may be surfaces that are approximately perpendicular to the thickness direction of the sealing layer 234.

[0055] More specifically, the surface protective layer 232 is disposed on the light incident side of the sealing layer 234. In one embodiment, the surface protective layer 232 is disposed in contact with the surface of the sealing layer 234 on the light incident side. In another embodiment, another layer may be interposed between the surface protective layer 232 and the sealing layer 234. As a result, according to this embodiment, light is incident on the surface protective layer 232 and the sealing layer 234 in this order.

[0056] The thickness of the surface protective layer 232 may be 20 μm or more and 200 μm or less. The thickness of the surface protective layer 232 is preferably 20 μm or more and 50 μm or less. This reduces the mass of the photovoltaic power generation module 112. The thickness of the surface protective layer 232 is preferably 20 μm or more and 50 μm or less. 2 The thickness of the surface protection layer 232 may be determined such that the mass of the surface protection layer 232 and the sealing layer 234 is 800 g / m 2 The thickness of the surface protection layer 232 may be determined so that the mass of the photovoltaic module 112 is 1200 g / m 2 The thickness of the surface protection layer 232 may be determined so that the mass of the photovoltaic module 112 is 500 g / m 2 The mass of the photovoltaic power generation module 112 may be determined as follows: The mass of the photovoltaic power generation module 112 may be the mass per installation area of ​​the photovoltaic power generation module 112, or may be the mass per area of ​​the photovoltaic power generation panel.

[0057] (Composition of Surface Protection Layer 232) In this embodiment, the surface protection layer 232 includes a resin material (not shown) and a wavelength converting material 272. Details of the wavelength converting material 272 will be described later.

[0058] The resin material may be at least one selected from the group consisting of polyethylene (PE), ultra-high molecular weight polyethylene (U-PE), polymethyl methacrylic (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), fluorine-based resin, polyimide (PI), unsaturated polyester (UP), epoxy resin (EP), and silicone resin (SI). The molecular weight of the ultra-high molecular weight polyethylene (U-PE) may be about 1 to 7 million. The fluorine-based resin may be polyvinylidene fluoride (PVDF), polytetrafluoroethylene (PTFE), perfluoroethylene propene copolymer (FEP), perfluoroalkoxyalkane (PFA), ethylene tetrafluoroethylene copolymer (ETFE), polychlorotrifluoroethylene (PCTFE), ethylene chlorotrifluoroethylene copolymer (ECTFE), polyvinyl fluoride (PVF), etc.

[0059] Perfluoroalkoxyalkane (PFA) is sometimes called tetrafluoroethylene-perfluoroalkoxyethylene copolymer resin. Perfluoroethylenepropene copolymer (FEP) is sometimes called tetrafluoroethylene-ethylene copolymer resin. Ethylene chlorotrifluoroethylene copolymer (ECTFE) is sometimes called trifluorochloroethylene-ethylene copolymer resin.

[0060] (Optical Properties of Surface Protection Layer 232) The surface protection layer 232 preferably has a refractive index similar to that of air or atmosphere. For example, the surface protection layer 232 has a refractive index similar to that of air or atmosphere in a stratospheric environment. Examples of the surface protection layer 232 include glass with a refractive index of about 1.45 to 1.46, and resin with a refractive index of about 1.42. An example of a resin with a refractive index of about 1.42 is ethylene-tetrafluoroethylene resin (ETFE resin).

[0061] It is preferable that the surface protective layer 232 is substantially transparent to ultraviolet light. The transmittance of the surface protective layer 232 to light having a wavelength of 200 nm to 450 nm is preferably 90% or more, and more preferably 95% or more. The transmittance is measured, for example, by an ultraviolet-visible-near infrared spectrophotometer.

[0062] It is preferable that the surface protective layer 232 is substantially transparent to visible light and / or near infrared light. The transmittance of the surface protective layer 232 to light having a wavelength of 380 nm to 780 nm is preferably 90% or more, and more preferably 95% or more. The transmittance of the surface protective layer 232 to light having a wavelength of 800 nm to 1600 nm is preferably 90% or more, and more preferably 95% or more. The above transmittance is measured, for example, by an ultraviolet-visible-near infrared spectrophotometer.

[0063] (Physical Properties of Surface Protection Layer 232) In this embodiment, the surface protection layer 232 is made of a material that has a durability of about six months to two years in a stratospheric environment test. The temperature of the stratospheric environment is, for example, -88 degrees to 50 degrees. The atmospheric pressure of the stratospheric environment is, for example, 2 kPa to 101.3 kPa. The average atmospheric pressure of the stratospheric environment is, for example, 5 kPa or less. The humidity of the stratospheric environment is, for example, 0% RH to ground humidity. The ultraviolet rays irradiated in the stratospheric environment are, for example, UV-A, UV-B, and UV-C. The ozone concentration in the stratospheric environment is, for example, 2 ppm to 8 ppm. Water may be present in the stratospheric environment.

[0064] The surface protection layer 232 preferably has a degree of flexibility that allows it to be arranged along the wing surface shape of an aircraft flying in a stratospheric environment. The surface protection layer 232 preferably has a degree of flexibility that allows it to accommodate deflection and / or vibration that occurs when the aircraft flies in a stratospheric environment.

[0065] In this embodiment, the sealing layer 234 seals the photoelectric conversion cell 240. The sealing layer 234 protects the photoelectric conversion cell 240 from, for example, oxygen and moisture. The sealing layer 234 may seal a portion of the photoelectric conversion cell 240, or may seal the entire photoelectric conversion cell 240. In one embodiment, the sealing layer 234 is disposed so as to cover at least a portion of the surface 242 of the photoelectric conversion cell 240. In another embodiment, the sealing layer 234 is disposed so as to cover at least a portion of the side surface 246 of the photoelectric conversion cell 240.

[0066] 2, the sealing layer 234 seals the entire photoelectric conversion cell 240. In this case, a part of the sealing layer 234 is disposed between the front surface 242 of the photoelectric conversion cell 240 and the front surface protective layer 232. Similarly, a part of the sealing layer 234 is disposed between the rear surface 244 of the photoelectric conversion cell 240 and the rear surface protective layer 236.

[0067] The thickness of the sealing layer 234 may be 20 μm or more and 400 μm or less. The thickness of the sealing layer 234 is preferably 20 μm or more and 100 μm or less. This reduces the mass of the photovoltaic power generation module 112. The thickness of the sealing layer 234 is preferably 20 μm or more and 100 μm or less. 2 The thickness of the sealing layer 234 may be determined such that the mass of the surface protection layer 232 and the sealing layer 234 is 1000 g / m 2 The thickness of the encapsulation layer 234 may be determined such that the mass of the photovoltaic module 112 is 1200 g / m 2 The thickness of the encapsulation layer 234 may be determined such that the mass of the photovoltaic module 112 is 500 g / m 2 The mass of the photovoltaic power generation module 112 may be determined as follows: The mass of the photovoltaic power generation module 112 may be the mass per installation area of ​​the photovoltaic power generation module 112, or may be the mass per area of ​​the photovoltaic power generation panel.

[0068] (Composition of sealing layer 234) In this embodiment, the sealing layer 234 includes a resin material (not shown) and a wavelength converting material 274. In this embodiment, the resin material of the sealing layer 234 and the resin material of the surface protection layer 232 are different in type and / or composition. The details of the wavelength converting material 274 will be described later.

[0069] As the resin material, various materials known as sealing materials for solar cells are used. Examples of the resin material include at least one selected from ethylene-vinyl acetate copolymer resin (EVA), polyolefin elastomer (POE), silicone resin (SI), and ionomer resin.

[0070] (Optical Properties of Sealing Layer 234) The sealing layer 234 may have a refractive index larger than that of the surface protection layer 232. This suppresses reflection loss. An example of the material of the sealing layer 234 is a resin having a refractive index of about 1.5 to 1.6. An example of the resin having a refractive index of about 1.5 to 1.6 is ethylene-vinyl acetate copolymer resin (EVA resin).

[0071] It is preferable that the sealing layer 234 is substantially transparent to ultraviolet light. The transmittance of the sealing layer 234 to light having a wavelength of 200 nm to 450 nm may be 80% or more. The transmittance is measured, for example, by an ultraviolet-visible-near infrared spectrophotometer.

[0072] It is preferable that the sealing layer 234 is substantially transparent to visible light and / or near infrared light. The transmittance of the sealing layer 234 to light having a wavelength of 380 nm to 780 nm may be 80% or more. The transmittance of the sealing layer 234 to light having a wavelength of 800 nm to 1600 nm may be 80% or more. The above transmittance is measured, for example, by an ultraviolet-visible-near infrared spectrophotometer.

[0073] In this embodiment, the back surface protective layer 236 is disposed on one of the two surfaces of the sealing layer 234, opposite the surface on which the front surface protective layer 232 is disposed. The two surfaces of the sealing layer 234 may be surfaces that are approximately perpendicular to the thickness direction of the sealing layer 234. The back surface protective layer 236 is disposed between the sealing layer 234 and the wing surface 20 of the aircraft 100.

[0074] In one embodiment, the back surface protective layer 236 is disposed in contact with the surface of the sealing layer 234 on the side of the blade surface 20. In another embodiment, another layer may be interposed between the back surface protective layer 236 and the sealing layer 234.

[0075] In one embodiment, the back surface protective layer 236 is disposed in contact with the blade surface 20. In other embodiments, other layers may be interposed between the back surface protective layer 236 and the blade surface 20.

[0076] In this embodiment, the back surface protective layer 236 bonds the solar power generation module 112 and the wing surface 20 of the aircraft 100. There are no particular limitations on the material and shape of the back surface protective layer 236. Examples of the back surface protective layer 236 include an adhesive, an adhesive layer containing an adhesive and a resin material, a pressure sensitive adhesive, and an adhesive layer containing a pressure sensitive adhesive and a resin material.

[0077] The photoelectric conversion cell 240 converts the light energy of incident light into electrical energy. A cell having any known structure is used as the photoelectric conversion cell 240. Examples of the photoelectric conversion cell 240 include a silicon-based photovoltaic element, a III-V-based photovoltaic element, a perovskite-type photovoltaic element, a CIS solar cell, a CIGS solar cell, a dye-sensitized photovoltaic element, and an organic thin-film photovoltaic element.

[0078] In this embodiment, the n-type semiconductor layer 252 includes an n-type semiconductor. In this embodiment, the p-type semiconductor layer 254 includes a p-type semiconductor. In this embodiment, the light-receiving surface electrode 256 is electrically connected to the n-type semiconductor. The light-receiving surface electrode 256 may be a comb-shaped electrode having finger regions and busbar regions. In this embodiment, the back electrode 258 is electrically connected to the p-type semiconductor layer 254. In this embodiment, the positive electrode terminal 262 is electrically connected to the back electrode 258. In this embodiment, the negative electrode terminal 264 is electrically connected to the light-receiving surface electrode 256.

[0079] In this embodiment, the wavelength converting material 272 converts the wavelength of light. For example, the wavelength converting material 272 converts at least a part of light having a wavelength of 100 nm to 500 nm into light having a different wavelength. The wavelength converting material 272 may convert at least a part of light having a wavelength of 100 nm to 400 nm into light having a different wavelength.

[0080] In this embodiment, the wavelength conversion material 272 is excited by light incident on the photovoltaic power generation module 112 and emits light having a specific wavelength. The wavelength conversion material 272 is excited by light in a second wavelength region, for example, and emits light having a longer wavelength than the excitation light. The second wavelength region includes a fourth wavelength region included in the range of 100 nm or more and 400 nm or less. The second wavelength region and the fourth wavelength region will be described in detail later.

[0081] In one embodiment, the wavelength converting material 272 emits light having a wavelength that is relatively efficient for conversion by the photoelectric conversion element. For example, the wavelength converting material 272 emits light having a wavelength of 380 nm or more. The wavelength converting material 272 may emit light having a wavelength of 400 nm or more. In another embodiment, the wavelength converting material 272 emits light having a wavelength included in the excitation band of the wavelength converting material 274.

[0082] The wavelength converting material 272 includes, for example, one or more materials having an excitation band at a wavelength of 100 to 500 nm and an emission peak at a wavelength of 380 to 780 nm. Two or more types of wavelength converting materials 272 may be used in combination. The wavelength converting material 272 may include a material that emits blue light (wavelength 440 to 480 nm), a material that emits green light (wavelength 500 to 540 nm), a material that emits yellow light (wavelength 540 to 595 nm), or a material that emits red light (wavelength 600 to 700 nm).

[0083] In this embodiment, the wavelength conversion material 272 includes at least one of an inorganic phosphor and an organic phosphor. Examples of the wavelength conversion material 272 include an organic dye, a rare earth complex, an inorganic crystal or glass doped with a luminescent ion, inorganic phosphor nanoparticles, quantum dots, and oxide phosphor nanoparticles. The quantum dots may be semiconductor particles having a size that has a quantum confinement effect.

[0084] The wavelength conversion material 272 may include an inorganic phosphor. Examples of the inorganic phosphor include at least one selected from the group consisting of oxide phosphors, nitride phosphors, oxynitride phosphors, chloride phosphors, oxychloride phosphors, sulfide phosphors, halide phosphors, aluminate phosphors, halophosphate chloride phosphors, and silica-based phosphors. The silica-based phosphor is a phosphor in which silica is used as the main component of the matrix of the fluorescent light-emitting material, and an example of the silica-based phosphor is a composite oxide containing particulate silica and a europium compound. The silica-based phosphor may include aluminum and europium.

[0085] Inorganic phosphors are more durable in a stratospheric environment than organic phosphors. Inorganic phosphors are more durable in weather resistance and / or UV resistance than organic phosphors. According to this embodiment, the surface protection layer 232 containing the wavelength conversion material 272 is disposed on the outer side of the sealing layer 234 containing the wavelength conversion material 274. As a result, for example, when the wavelength conversion material 272 converts light in the UV region into light with a longer wavelength than the light, the amount of UV radiation to which the wavelength conversion material 274 is exposed is reduced.

[0086] As an inorganic phosphor that has an excitation band in the ultraviolet to near ultraviolet region of 300 to 440 nm and emits blue light, (Sr,Ba)MgAl 10 O 17 :EU 2+ , (Sr,Ba)3MgSi2O8:Eu 2+ Examples of inorganic phosphors that have an excitation band in the ultraviolet to near ultraviolet region of 300 to 440 nm and emit green light include SrAl2O4:Eu 2+ , SrBaSiO4:Eu 2+ , Y3(Al,Gd)5O 12 :Ce 3+ , SrSiON:Eu 2+ , BaMgAl 10 O 17 :EU 2+ ,Mn 2+ , Ba2MgSi2O7:Eu 2+ , Ba2SiO4:Eu 2+ , Ba2Li2Si2O7:Eu 2+ , BaAl2O4:Eu 2+ Examples of inorganic phosphors that have an excitation band in the ultraviolet to near ultraviolet region of 300 to 440 nm and emit yellow light include La3Si6N 11 :Ce 3+ Examples of inorganic phosphors that have an excitation band in the ultraviolet to near ultraviolet region of 300 to 440 nm and emit red light include MgSr3Si2O8:Eu 2+ ,Mn 2+ , Ca2MgSi2O7:Eu 2+ ,Mn 2+ Examples include:

[0087] As an inorganic phosphor that has an excitation band in the blue region of wavelengths from 440 to 480 nm and emits green light, SrAl2O4:Eu 2+ , SrBaSiO4:Eu 2+ , Y3(Al,Gd)5O 12 :Ce 3+ , SrSiON:Eu 2+ , β-SiAlON:Eu 2+Examples of inorganic phosphors that have an excitation band in the blue region of 440 to 480 nm and emit yellow light include Y3(Al,Gd)5O 12 :Ce 3+ , Sr2SiO4:Eu 2+ Examples of inorganic phosphors that have an excitation band in the blue region of 440 to 480 nm and emit red light include CaAlSiN3:Eu 2+ , CaSiN3:Eu 2+ , (Ca,Sr)2Si5N8:Eu 2+ , α-SiAlON:Eu 2+ Examples include:

[0088] The content of the wavelength converting material 272 in the surface protective layer 232 may be 10% by mass or less, and is preferably 1 to 8% by mass. When the content of the wavelength converting material 272 is within the above numerical range, for example, even if the thickness of the surface protective layer 232 is 20 μm or more and 50 μm or less, a sufficient amount of ultraviolet light can be converted into visible light or near-infrared light to improve the conversion efficiency of the photoelectric conversion cell 240.

[0089] The content of the wavelength converting material 272 may be determined in consideration of the transmittance of the surface protective layer 232 to ultraviolet light. The content of the wavelength converting material 272 may be determined so that the transmittance of the surface protective layer 232 to ultraviolet light is 90% or more. The content of the wavelength converting material 272 is determined so that the transmittance of the surface protective layer 232 to light having a wavelength of 250 nm to 1600 nm is 90% or more, for example. The transmittance is measured by, for example, an ultraviolet-visible-near infrared spectrophotometer. The surface protective layer 232 may be an example of a layer containing the wavelength converting material 272.

[0090] In this embodiment, the wavelength converting material 274 converts the wavelength of light. For example, the wavelength converting material 274 converts at least a part of light having a wavelength of 100 nm to 500 nm into light having a different wavelength. The wavelength converting material 274 may convert at least a part of light having a wavelength of 100 nm to 400 nm into light having a different wavelength.

[0091] In this embodiment, the wavelength converting material 274 is excited by light incident on the photovoltaic power generation module 112 and / or light emitted by the wavelength converting material 272, and emits light having a specific wavelength. The wavelength converting material 274 is excited by light in a first wavelength region, and emits light having a longer wavelength than the excitation light. The first wavelength region includes a third wavelength region included in the range of 100 nm or more and 400 nm or less, for example. The first wavelength region and the third wavelength region will be described in detail later.

[0092] The upper limit of the first wavelength region is, for example, different from the upper limit of the second wavelength region described above. The lower limit of the first wavelength region is, for example, different from the lower limit of the second wavelength region described above. The upper limit of the third wavelength region is, for example, different from the upper limit of the fourth wavelength region described above. The lower limit of the third wavelength region is, for example, different from the lower limit of the fourth wavelength region described above.

[0093] In one embodiment, the maximum excitation wavelength of wavelength converting material 274 is different from the maximum excitation wavelength of wavelength converting material 272. In another embodiment, the maximum fluorescence wavelength of wavelength converting material 274 is different from the maximum fluorescence wavelength of wavelength converting material 272.

[0094] In one embodiment, the wavelength converting material 274 may convert the wavelength of light that is longer than the light whose wavelength is converted by the wavelength converting material 272. For example, the wavelength converting material 274 has an excitation band on the longer wavelength side than the wavelength converting material 272. In another embodiment, the wavelength converting material 274 may convert the wavelength of light that is shorter than the light whose wavelength is converted by the wavelength converting material 272. For example, the wavelength converting material 274 has an excitation band on the shorter wavelength side than the wavelength converting material 272. The wavelength converting material 272 may have a similar configuration to the second wavelength converting material described above, and the wavelength converting material 274 may have a similar configuration to the first wavelength converting material described above.

[0095] In this embodiment, the wavelength conversion material 274 emits light having a wavelength that provides relatively good conversion efficiency by the photoelectric conversion element. The wavelength conversion material 274 emits light having a wavelength of, for example, 380 nm or more. The wavelength conversion material 274 may emit light having a wavelength of 400 nm or more. This improves the conversion efficiency of the photoelectric conversion cell 240.

[0096] The wavelength converting material 274 includes, for example, one or more materials having an excitation band at a wavelength of 100 to 500 nm and an emission peak at a wavelength of 380 to 780 nm. Two or more types of wavelength converting materials 274 may be used in combination. The wavelength converting material 274 may include a material that emits blue light (wavelength 440 to 480 nm), a material that emits green light (wavelength 500 to 540 nm), a material that emits yellow light (wavelength 540 to 595 nm), or a material that emits red light (wavelength 600 to 700 nm).

[0097] In this embodiment, the wavelength conversion material 274 includes at least one of an inorganic phosphor and an organic phosphor. Examples of the wavelength conversion material 274 include an organic dye, a rare earth complex, an inorganic crystal or glass doped with a luminescent ion, inorganic phosphor nanoparticles, quantum dots, and oxide phosphor nanoparticles. The quantum dots may be semiconductor particles having a size that has a quantum confinement effect.

[0098] Wavelength converting material 274 may include an inorganic phosphor similar to the inorganic phosphor described in relation to wavelength converting material 272. Wavelength converting material 274 may include an organic phosphor. Examples of organic phosphors include organic dyes and luminescent rare earth complexes. Examples of luminescent rare earth complexes include lanthanide complexes such as Eu(III) complexes.

[0099] The content of the wavelength converting material 274 in the sealing layer 234 may be 10% by mass or less, and is preferably 1 to 8% by mass. When the content of the wavelength converting material 274 is within the above numerical range, for example, even if the thickness of the sealing layer 234 is 20 μm or more and 100 μm or less, a sufficient amount of ultraviolet light can be converted into visible light or near infrared light to improve the conversion efficiency of the photoelectric conversion cell 240. This can improve, for example, the conversion efficiency on the ground by 2% or more. Also, the conversion efficiency in a stratospheric environment can improve by 4% or more.

[0100] The content of the wavelength conversion material 274 may be determined in consideration of the transmittance of the sealing layer 234 to ultraviolet light. The content of the wavelength conversion material 274 may be determined, for example, so that the transmittance of the sealing layer 234 to light having a wavelength of 250 nm to 1600 nm is 90% or more. The content of the wavelength conversion material 274 may be determined so that the transmittance of the sealing layer 234 to light having a wavelength of 250 nm to 1600 nm is 80% or more. The above transmittance is measured, for example, by an ultraviolet-visible-near infrared spectrophotometer. The sealing layer 234 may be an example of a layer containing the wavelength conversion material 274. In one embodiment, the transmittance of the sealing layer 234 to ultraviolet light is 80% or more, and the transmittance of the surface protection layer 232 to ultraviolet light is 90% or more. In another embodiment, the transmittance of the sealing layer 234 to ultraviolet light is 90% or more, and the transmittance of the surface protection layer 232 to ultraviolet light is 90% or more.

[0101] The surface protection layer 232 may be an example of a second wavelength conversion layer. The resin material contained in the surface protection layer 232 may be an example of a second resin. The sealing layer 234 may be an example of a first wavelength conversion layer. The resin material contained in the sealing layer 234 may be an example of a first resin. The photoelectric conversion cell 240 may be an example of a photoelectric conversion element. The wavelength conversion material 272 may be an example of a second wavelength conversion material. The wavelength conversion material 274 may be an example of a first wavelength conversion material.

[0102] (An example of another embodiment) In the present embodiment, the details of the photovoltaic power generation module 112 have been described by taking as an example a case in which the photovoltaic power generation module 112 does not include a light trapping structure. However, the photovoltaic power generation module 112 is not limited to this embodiment. In other embodiments, the photovoltaic power generation module 112 may include a light trapping structure for efficiently trapping light inside the photovoltaic power generation module 112.

[0103] For example, the photovoltaic power generation module 112 has a fine uneven structure on the surface on the side where light is incident (sometimes referred to as the outside). For example, the photovoltaic power generation module 112 has a reflective portion on a side surface connecting the front surface 222 and the back surface 224, which reflects light traveling from inside the photovoltaic power generation module 112 to the outside of the photovoltaic power generation module 112. For example, the photovoltaic power generation module 112 has a reflective portion between the back surface protective layer 236 and the sealing layer 234, at the interface between the back surface protective layer 236 and the sealing layer 234, or on the surface on the back surface 224 side of the back surface protective layer 236, which reflects light traveling from inside the photovoltaic power generation module 112 to the outside of the photovoltaic power generation module 112. The back surface protective layer 236 may function as the above-mentioned reflective layer.

[0104] The light confinement structure may be configured to confine light in a wavelength region corresponding to ultraviolet light. This allows efficient wavelength conversion of the ultraviolet light. As a result, the power generation efficiency of the photovoltaic power generation module 112 is improved. The light confinement structure may be configured to confine light in a wavelength region in which the conversion efficiency of the photovoltaic conversion cell 240 is relatively high. This allows the power generation efficiency of the photovoltaic power generation module 112 to be improved.

[0105] In the present embodiment, the details of the photoelectric conversion cell 240 have been described by taking as an example a case in which the photoelectric conversion cell 240 generates power using a pn junction. However, the photoelectric conversion cell 240 is not limited to the present embodiment. In other embodiments, for example, the photoelectric conversion cell 240 generates power using a pin junction.

[0106] In this embodiment, the details of the photoelectric conversion cell 240 have been described by taking as an example a case in which the light receiving surface electrode 256 is disposed on the front surface 242 side of the photoelectric conversion cell 240. However, the photoelectric conversion cell 240 is not limited to this embodiment. In other embodiments, for example, the photoelectric conversion cell 240 may have a back electrode type structure that does not have an electrode on the front surface 242 side.

[0107] In the present embodiment, the details of the photovoltaic power generation module 112 and the photoelectric conversion cell 240 have been described by taking as an example a case in which the photovoltaic power generation module 112 and the photoelectric conversion cell 240 have a single-sided light receiving structure. However, the photovoltaic power generation module 112 and the photoelectric conversion cell 240 are not limited to this embodiment. In other embodiments, at least one of the photovoltaic power generation module 112 and the photoelectric conversion cell 240 may have a double-sided light receiving structure.

[0108] In the present embodiment, the details of the photovoltaic power generation module 112 have been described by taking as an example a case in which the sealing layer 234 seals the entire photovoltaic conversion cell 240. However, the photovoltaic power generation module 112 is not limited to this embodiment. In other embodiments, the sealing layer 234 seals a part of the photovoltaic conversion cell 240. For example, the photovoltaic conversion cell 240 is sealed by the sealing layer 234 and the back surface protection layer 236. For example, the photovoltaic conversion cell 240 is disposed so that the back surface 244 of the photovoltaic conversion cell 240 is in contact with the back surface protection layer 236. In addition, the sealing layer 234 is disposed so as to cover the photovoltaic conversion cell 240. As a result, the front surface 242 and the side surface 246 of the photovoltaic conversion cell 240 are sealed by the sealing layer 234.

[0109] 3 and 4, a photovoltaic power generation module 312, which is another example of the photovoltaic power generation module 112, will be described in detail. The photovoltaic power generation module 312 differs from the photovoltaic power generation module 112 in that the photovoltaic power generation module 312 includes another layer having a higher content of the wavelength converting material 272 than the surface protective layer 232. For example, the photovoltaic power generation module 312 differs from the photovoltaic power generation module 112 in that the wavelength converting material 272 is disposed in a layer different from the surface protective layer 232.

[0110] 3 shows a schematic diagram of an example of the internal configuration of a photovoltaic power generation module 312. In this embodiment, the photovoltaic power generation module 312 differs from the photovoltaic power generation module 112 in that the photovoltaic power generation module 312 includes a conversion layer 330 including a wavelength conversion material 272 on the outside of the surface protection layer 232, and in that the surface protection layer 232 does not include the wavelength conversion material 272. In other respects, the photovoltaic power generation module 312 may have a configuration similar to that of the photovoltaic power generation module 112.

[0111] In this embodiment, the conversion layer 330 includes a resin material (not shown) and a wavelength converting material 272. In this embodiment, the resin material of the conversion layer 330 and the resin material of the sealing layer 234 are different in type and / or composition. In this embodiment, the resin material of the conversion layer 330 and the resin material of the surface protection layer 232 are different in type and / or composition. As the resin material of the conversion layer 330, for example, various resins exemplified in relation to the surface protection layer 232 are used.

[0112] In this embodiment, the content of the wavelength converting material 272 in the conversion layer 330 may be greater than the content of the wavelength converting material 272 in the surface protective layer 232. The content of the wavelength converting material 272 in the conversion layer 330 may be 10 mass % or less, and is preferably 1 to 8 mass %.

[0113] The conversion layer 330 may have optical properties similar to those of the surface protection layer 232. The conversion layer 330 may have a refractive index greater than that of the surface protection layer 232. In this case, the sealing layer 234 may have a refractive index greater than that of the surface protection layer 232. This suppresses reflection loss. The absolute value of the difference between the refractive index of the conversion layer 330 and the refractive index of the surface protection layer 232 may be 0.01 or more and 2.5 or less. The absolute value of the difference may be 0.05 or more and 2 or less, 0.05 or more and 1 or less, 0.05 or more and 0.5 or less, or 0.05 or more and 0.1 or less. The absolute value of the difference between the refractive index of the surface protection layer 232 and the refractive index of the sealing layer 234 may be 0.01 or more and 2.5 or less. The absolute value of the difference may be 0.05 or more and 2 or less, 0.05 or more and 1 or less, 0.05 or more and 0.5 or less, or 0.05 or more and 0.1 or less.

[0114] In this embodiment, the wavelength converting material 272 preferably includes an inorganic phosphor. The wavelength converting material 274 may include an inorganic phosphor and / or an organic phosphor. The content of the organic phosphor in the encapsulation layer 234 may be greater than the content of the organic phosphor in the conversion layer 330.

[0115] The encapsulating layer 234 may be an example of a first wavelength-converting layer, and the conversion layer 330 may be an example of a second wavelength-converting layer.

[0116] Fig. 4 illustrates another example of the internal configuration of a photovoltaic power generation module 312. In this embodiment, the photovoltaic power generation module 312 differs from the photovoltaic power generation module 312 described in relation to Fig. 3 in that the photovoltaic power generation module 312 includes a conversion layer 330 between a surface protection layer 232 and a sealing layer 234. With regard to other features, the photovoltaic power generation module 312 according to this embodiment may have a similar configuration to the photovoltaic power generation module 312 described in relation to Fig. 3.

[0117] 5 and 6 , a photovoltaic power generation module 512, which is another example of the photovoltaic power generation module 112, will be described in detail. The photovoltaic power generation module 512 differs from the photovoltaic power generation module 112 in that the photovoltaic power generation module 512 includes a coating layer 530 that is thinner than the surface protection layer 232 on the surface 242 of the photoelectric conversion cell 240, and in that the surface protection layer 232 and / or the sealing layer 234 includes the wavelength conversion material 272, and the coating layer 530 includes the wavelength conversion material 274.

[0118] 5 shows an example of an internal configuration of a photovoltaic module 512. In this embodiment, the photovoltaic module 512 includes a coating layer 530 on the surface 242 of the photovoltaic conversion cell 240.

[0119] In this embodiment, the coating layer 530 includes a resin material (not shown) and a wavelength converting material 274. The thickness of the coating layer 530 may be 5 μm or more and 50 μm or less. The thickness of the coating layer 530 may be less than 10 μm. The thickness of the coating layer 530 may be less than 1 μm or less than 0.1 μm. The content of the wavelength converting material 274 in the coating layer 530 may be 5 mass %.

[0120] (Optical properties of coating layer 530) The coating layer 530 may have a refractive index greater than that of the encapsulation layer 234, thereby reducing reflection losses.

[0121] It is preferable that the coating layer 530 is substantially transparent to ultraviolet light. The transmittance of the coating layer 530 to light having a wavelength of 200 nm to 450 nm may be 80% or more. In this case, the transmittance of the sealing layer 234 to light having a wavelength of 200 nm to 450 nm may be 90% or more, or may be 95% or more. The above transmittance is measured, for example, by an ultraviolet-visible-near infrared spectrophotometer.

[0122] The coating layer 530 is preferably substantially transparent to visible light and / or near infrared light. The coating layer 530 may have a transmittance of 80% or more for light having a wavelength of 380 nm to 780 nm. The coating layer 530 may have a transmittance of 80% or more for light having a wavelength of 800 nm to 1600 nm. The above transmittance is measured, for example, by an ultraviolet-visible-near infrared spectrophotometer.

[0123] The coating layer 530 may have a reflectance of less than 5% for light having a wavelength of 200 nm to 450 nm, thereby suppressing reflection loss.

[0124] The coating layer 530 is produced, for example, by the following procedure. First, the wavelength conversion material 274 and a solvent are mixed to produce a paste or slurry of the wavelength conversion material 274. Next, the paste or slurry is applied to the surface 242 of the photoelectric conversion cell 240. After that, a drying process of the paste or slurry is performed. As a result, the coating layer 530 is formed on the surface 242 of the photoelectric conversion cell 240.

[0125] In this embodiment, the encapsulation layer 234 is disposed so as to cover the coating layer 530 disposed on the surface 242 of the photoelectric conversion cell 240 and at least a part of the side surface 246 of the photoelectric conversion cell 240. For example, the encapsulation layer 234 is disposed so as to entirely cover the coating layer 530 and the junction portion between the n-type semiconductor layer 252 and the p-type semiconductor layer 254.

[0126] In this embodiment, the sealing layer 234 includes a wavelength converting material 272. The content of the wavelength converting material 272 in the sealing layer 234 may be 10 mass % or less, or may be 8 mass % or less. The content of the wavelength converting material 272 in the sealing layer 234 is preferably 1 to 8 mass %.

[0127] The content of the wavelength converting material 272 may be determined in consideration of the transmittance of the sealing layer 234 to ultraviolet light. The content of the wavelength converting material 272 is determined, for example, so that the transmittance of the sealing layer 234 to light having a wavelength of 250 nm to 1600 nm is 90% or more. The content of the wavelength converting material 272 may be determined so that the transmittance of the sealing layer 234 to light having a wavelength of 250 nm to 1600 nm is 80% or more. The transmittance is measured, for example, by an ultraviolet-visible-near infrared spectrophotometer. The sealing layer 234 may be an example of a layer containing the wavelength converting material 272.

[0128] In one embodiment, the encapsulation layer 234 may have a similar configuration to the encapsulation layer 234 described in connection with the photovoltaic module 112, except that the encapsulation layer 234 includes the wavelength converting material 272 instead of the wavelength converting material 274. In other embodiments, the encapsulation layer 234 may have a similar configuration to the surface protection layer 232 described in connection with the photovoltaic module 112.

[0129] The coating layer 530 may be an example of a first wavelength-converting layer, and the encapsulation layer 234 may be an example of a second wavelength-converting layer.

[0130] 6 is a schematic diagram showing another example of the internal configuration of a photovoltaic module 512. In this embodiment, the photovoltaic module 512 differs from the photovoltaic module 512 described in relation to FIG. 5 in that the surface protection layer 232 includes the wavelength conversion material 272, and the encapsulation layer 234 does not include the wavelength conversion material 272. In this embodiment, the encapsulation layer 234 is disposed between the coating layer 530 and the surface protection layer 232. In other features, the photovoltaic module 512 according to this embodiment may have a similar configuration to the photovoltaic module 512 described in relation to FIG. 5.

[0131] The coating layer 530 may be an example of a first wavelength conversion layer, the surface protection layer 232 may be an example of a second wavelength conversion layer, and the sealing layer 234 may be an example of an intermediate layer.

[0132] (An example of another embodiment) The sealing layer 234 may include the wavelength converting material 272 or may include the wavelength converting material 274. The content of the wavelength converting material 272 in the sealing layer 234 may be smaller than the content of the wavelength converting material 272 in the surface protection layer 232. The content of the wavelength converting material 274 in the sealing layer 234 may be smaller than the content of the wavelength converting material 274 in the coating layer 530.

[0133] In the present embodiment, the details of the photovoltaic power generation module 512 have been described by taking as an example a case in which the surface protective layer 232 and the sealing layer 234 are in contact with each other. However, the photovoltaic power generation module 512 is not limited to this embodiment. In other embodiments, another layer may be interposed between the surface protective layer 232 and the sealing layer 234.

[0134] In this embodiment, the details of the photovoltaic module 512 have been described by taking as an example a case where the wavelength conversion material 272 is included in the surface protection layer 232. However, the photovoltaic module 512 is not limited to this embodiment. In another embodiment, similar to the embodiment described in relation to FIG. 3 and FIG. 4, the photovoltaic module 512 may include a conversion layer 330 including the wavelength conversion material 272. In this case, the surface protection layer 232 may not include the wavelength conversion material 272. The content of the wavelength conversion material 272 in the wavelength conversion material 272 may be smaller than the content of the wavelength conversion material 272 in the conversion layer 330.

[0135] Another example of the photovoltaic module 112 will be described in detail with reference to Figures 7, 8 and 9. According to the embodiment described with reference to Figures 7, 8 and 9, a bifacial photovoltaic module is provided.

[0136] Fig. 7 shows a schematic example of the internal configuration of a photovoltaic power generation module 712. The photovoltaic power generation module 712 may be a bifacial photovoltaic power generation module corresponding to the monofacial photovoltaic power generation module 112 described in relation to Fig. 2. The photovoltaic power generation module 712 may have a similar configuration to the photovoltaic power generation module 112, except that the photovoltaic power generation module 712 has a bifacial structure.

[0137] In this embodiment, the photovoltaic module 712 differs from the photovoltaic module 112 in that a front surface protective layer 232, a sealing layer 234, and a rear surface protective layer 732 are laminated in this order. The rear surface protective layer 732 includes a wavelength converting material 272. The rear surface protective layer 732 may have a similar configuration to the front surface protective layer 232.

[0138] In one embodiment, the photovoltaic module 712 includes a back protective layer 236 and is adhered to the wing surface 20 by the back protective layer 236. In other embodiments, the photovoltaic module 712 may not include the back protective layer 236.

[0139] The solar power generation module 712 may be an example of a photoelectric conversion device. The front surface protection layer 232 may be an example of a second wavelength conversion layer. The sealing layer 234 may be an example of a first wavelength conversion layer. The back surface protection layer 732 may be an example of a second wavelength conversion layer. The resin material contained in the back surface protection layer 732 may be an example of a second resin.

[0140] Fig. 8 illustrates an example of the internal configuration of a photovoltaic power generation module 812. The photovoltaic power generation module 812 may be a bifacial photovoltaic power generation module corresponding to the monofacial photovoltaic power generation module 312 described in relation to Fig. 4. The photovoltaic power generation module 812 may have a similar configuration to the photovoltaic power generation module 312, except that the photovoltaic power generation module 812 has a bifacial structure.

[0141] In this embodiment, the photovoltaic module 812 differs from the photovoltaic module 312 in that the front surface protection layer 232, the conversion layer 330, the sealing layer 234, the conversion layer 830, and the rear surface protection layer 732 are stacked in this order. The conversion layer 830 includes a wavelength converting material 272. The conversion layer 830 may have a similar configuration to the conversion layer 330.

[0142] In one embodiment, the photovoltaic module 812 includes a back protective layer 236 and is adhered to the wing surface 20 by the back protective layer 236. In other embodiments, the photovoltaic module 812 may not include the back protective layer 236.

[0143] The photovoltaic power generation module 812 may be an example of a photovoltaic conversion device. The sealing layer 234 may be an example of a first wavelength conversion layer. The conversion layer 330 may be an example of a second wavelength conversion layer. The conversion layer 830 may be an example of a second wavelength conversion layer. The resin material contained in the conversion layer 830 may be an example of a second resin.

[0144] (An example of another embodiment) In the present embodiment, the details of the photovoltaic power generation module 812 have been described by taking as an example a case in which the photovoltaic power generation module 812 is a bifacial photovoltaic power generation module corresponding to the monofacial photovoltaic power generation module 312 described in relation to Fig. 4. However, the photovoltaic power generation module 812 is not limited to this embodiment. In another embodiment, the photovoltaic power generation module 812 may be a bifacial photovoltaic power generation module corresponding to the monofacial photovoltaic power generation module 312 described in relation to Fig. 3.

[0145] Fig. 9 illustrates an example of the internal configuration of a photovoltaic power generation module 912. The photovoltaic power generation module 912 may be a bifacial photovoltaic power generation module corresponding to the monofacial photovoltaic power generation module 512 described in relation to Fig. 6. The photovoltaic power generation module 912 may have a similar configuration to the photovoltaic power generation module 512, except that the photovoltaic power generation module 912 has a bifacial structure.

[0146] In this embodiment, the solar power generation module 912 differs from the solar power generation module 512 in that a front surface protective layer 232, a sealing layer 234 and a back surface protective layer 732 are stacked in this order, and in that a coating layer 530 is arranged on the front surface 242 side of the photovoltaic conversion cell 240, and a coating layer 930 is arranged on the back surface 244 side of the photovoltaic conversion cell 240.

[0147] In this embodiment, the front surface protective layer 232 and the rear surface protective layer 732 include a wavelength converting material 272. The rear surface protective layer 732 may have a similar configuration to the front surface protective layer 232. In this embodiment, the coating layer 530 and the coating layer 930 include a wavelength converting material 274. The coating layer 930 may have a similar configuration to the coating layer 530.

[0148] In one embodiment, the photovoltaic module 912 includes a back protective layer 236 and is adhered to the wing surface 20 by the back protective layer 236. In other embodiments, the photovoltaic module 712 may not include the back protective layer 236.

[0149] The solar photovoltaic module 912 may be an example of a photovoltaic device. The front surface protective layer 232 may be an example of a second wavelength conversion layer. The coating layer 530 may be an example of a first wavelength conversion layer. The back surface protective layer 732 may be an example of a second wavelength conversion layer. The resin material contained in the back surface protective layer 732 may be an example of a second resin. The coating layer 930 may be an example of a first wavelength conversion layer. The resin material contained in the coating layer 930 may be an example of a first resin.

[0150] (An example of another embodiment) In the present embodiment, the details of the photovoltaic power generation module 912 have been described by taking as an example a case in which the photovoltaic power generation module 912 is a bifacial photovoltaic power generation module corresponding to the monofacial photovoltaic power generation module 512 described in relation to Fig. 6. However, the photovoltaic power generation module 912 is not limited to the present embodiment. In another embodiment, the photovoltaic power generation module 912 may be a bifacial photovoltaic power generation module corresponding to the monofacial photovoltaic power generation module 512 described in relation to Fig. 5.

[0151] In this embodiment, the details of the photovoltaic module 912 have been described by taking as an example a case in which each of the front surface protective layer 232 and the rear surface protective layer 732 is in contact with the sealing layer 234. However, the photovoltaic module 912 is not limited to this embodiment. In other embodiments, another layer may be disposed between at least one of the front surface protective layer 232 and the rear surface protective layer 732 and the sealing layer 234. The other layer may have a similar configuration to the conversion layer 330.

[0152] In the present embodiment, the details of the photovoltaic module 912 have been described by taking as an example a case in which the front surface protective layer 232 and the rear surface protective layer 732 are arranged on the outermost sides of the photovoltaic module 912. However, the photovoltaic module 912 is not limited to this embodiment. In other embodiments, another layer may be arranged on the outside of at least one of the front surface protective layer 232 and the rear surface protective layer 732. The other layer may have a similar configuration to the conversion layer 330.

[0153] 10 is a schematic diagram showing an example of an internal configuration of a photovoltaic module 1012. The photovoltaic module 1012 may have a similar configuration to the photovoltaic module 112 described in relation to FIG. 2, except that a coating layer 1030 is disposed between the encapsulation layer 234 and the surface 242 of the photovoltaic conversion cell 240.

[0154] In this embodiment, the coating layer 1030 is disposed in contact with the surface 242 of the photoelectric conversion cell 240. The coating layer 1030 includes, for example, a resin material (not shown) and a UV absorbing material 1074. The coating layer 1030 differs from the coating layer 530 in that the coating layer 1030 includes the UV absorbing material 1074 instead of the wavelength converting material 274 or together with the wavelength converting material 274. The coating layer 1030 may have a similar configuration to the coating layer 530 except for the above differences.

[0155] In this embodiment, the UV absorbing material 1074 absorbs ultraviolet rays. Any known UV absorbent may be used as the UV absorbing material 1074. The content of the UV absorbing material 1074 in the coating layer 1030 may be 5% by mass or less.

[0156] In this embodiment, the sealing layer 234 is disposed on one of the two surfaces of the coating layer 1030, which is the surface (the upper surface in the drawing) opposite to the surface (the lower surface in the drawing) where the coating layer 1030 contacts the photoelectric conversion cell 240. The sealing layer 234 is disposed so as to cover the coating layer 1030 disposed on the surface 242 of the photoelectric conversion cell 240 and at least a part of the side surface 246 of the photoelectric conversion cell 240. For example, the sealing layer 234 is disposed so as to entirely cover the coating layer 1030 and the junction portion between the n-type semiconductor layer 252 and the p-type semiconductor layer 254.

[0157] According to this embodiment, light incident on the photovoltaic power generation module 1012 first passes through the layer containing the wavelength conversion material 272. The light that has passed through the above layer then passes through the layer containing the wavelength conversion material 274. The light that has passed through the above layer then passes through the layer containing the UV absorbing material 1074 and enters the photoelectric conversion cell 240. According to this embodiment, even if ultraviolet rays remain in the light that has passed through the layer containing the wavelength conversion material 272 and the layer containing the wavelength conversion material 274, the ultraviolet rays are absorbed by the UV absorbing material 1074. This further suppresses deterioration of the photoelectric conversion cell 240 due to ultraviolet rays.

[0158] The photovoltaic module 1012 may be an example of a photovoltaic device. The coating layer 1030 may be an example of an absorption layer. The encapsulation layer 234 may be an example of a conversion layer.

[0159] (An example of another embodiment) In the present embodiment, the details of the solar power generation module 1012 have been described by taking as an example a case in which the solar power generation module 1012 corresponds to the solar power generation module 112 described in relation to Fig. 2. However, the solar power generation module 1012 is not limited to this embodiment. In other embodiments, the solar power generation module 1012 may have a similar configuration to the solar power generation modules described in relation to Figs. 3 to 9.

[0160] In this embodiment, the details of the photovoltaic power generation module 1012 have been described by taking as an example a case where a thin coating layer 1030 is disposed on the surface 242 of the photovoltaic conversion cell 240. However, the photovoltaic power generation module 1012 is not limited to this embodiment. In another embodiment, a film having a thickness of 20 μm to 100 μm, preferably 20 μm to 50 μm, and including a UV absorbing material 1074 may be disposed in contact with the photovoltaic conversion cell 240.

[0161] Although the present invention has been described above using the embodiments, the technical scope of the present invention is not limited to the scope described in the above embodiments. It is clear to those skilled in the art that various modifications and improvements can be made to the above embodiments. It is clear from the description of the claims that such modifications and improvements can also be included in the technical scope of the present invention.

[0162] It should be noted that the order of execution of each process, such as operations, procedures, steps, and stages, in the devices, systems, programs, and methods shown in the claims, specifications, and drawings is not specifically stated as "before" or "prior to," and that the process may be performed in any order unless the output of a previous process is used in a later process. Even if the operational flow in the claims, specifications, and drawings is described using "first," "next," and the like for convenience, this does not mean that the process must be performed in this order. [Explanation of symbols]

[0163] 20 wing surface, 100 flying object, 110 power generation system, 112 photovoltaic power generation module, 120 power control circuit, 122 power storage device, 130 electric motor, 140 propeller, 150 sensor, 160 control device, 222 surface, 224 back surface, 232 surface protection layer, 234 sealing layer, 236 back protection layer, 240 photoelectric conversion cell, 242 surface, 244 back surface, 246 side surface, 252 n-type semiconductor layer, 254 p-type semiconductor layer, 256 light receiving surface electrode, 258 back surface electrode, 262 positive electrode terminal, 264 negative electrode terminal, 272 wavelength conversion material, 274 wavelength conversion material, 312 photovoltaic power generation module, 330 conversion layer, 512 photovoltaic power generation module, 530 coating layer, 712 photovoltaic power generation module, 732 back protection layer, 812 Photovoltaic module, 830 Conversion layer, 912 Photovoltaic module, 930 Coating layer, 1012 Photovoltaic module, 1030 Coating layer, 1074 UV absorbing material

Claims

1. A photoelectric conversion element that converts the optical energy of incident light into electrical energy; A first wavelength conversion layer disposed in contact with a light receiving surface of the photoelectric conversion element; a second wavelength conversion layer disposed on a surface of the first wavelength conversion layer opposite to a surface in contact with the photoelectric conversion element; Equipped with The first wavelength conversion layer includes a first wavelength conversion material that converts the wavelength of light in a first wavelength region, The second wavelength conversion layer includes a second wavelength conversion material that emits light in a second wavelength region and converts the wavelength of the light; an upper limit value of the first wavelength range is different from an upper limit value of the second wavelength range, and / or a lower limit value of the first wavelength range is different from a lower limit value of the second wavelength range; Photoelectric conversion device.

2. The first wavelength range includes a third wavelength range included in the range of 100 nm to 400 nm, the second wavelength region includes a fourth wavelength region included in the range of 100 nm to 400 nm, an upper limit value of the third wavelength range is different from an upper limit value of the fourth wavelength range, and / or a lower limit value of the third wavelength range is different from a lower limit value of the fourth wavelength range; The photoelectric conversion device according to claim 1 .

3. the first wavelength conversion layer includes a first resin and the first wavelength conversion material, the second wavelength conversion layer includes a second resin and the second wavelength conversion material, The first resin and the second resin are different in type and / or composition. The photoelectric conversion device according to claim 1 .

4. The first wavelength conversion layer has a refractive index greater than that of the second wavelength conversion layer. The photoelectric conversion device according to claim 3 .

5. The first resin is at least one selected from an ethylene-vinyl acetate copolymer resin (EVA), a polyolefin elastomer (POE), a silicone resin (SI), and an ionomer resin. The photoelectric conversion device according to claim 3 .

6. The second resin is at least one selected from the group consisting of polyethylene (PE), ultra-high molecular weight polyethylene (U-PE), polymethyl methacrylic (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), fluorine-based resin, polyimide (PI), unsaturated polyester (UP), epoxy resin (EP), and silicone resin (SI). The photoelectric conversion device according to claim 3 .

7. The first wavelength conversion layer is the light receiving surface of the photoelectric conversion element and at least a part of a side surface of the photoelectric conversion element are covered; Having a thickness of 20 μm or more and 100 μm or less, The photoelectric conversion device according to claim 1 .

8. The first wavelength conversion layer has a thickness of less than 10 μm. The photoelectric conversion device according to claim 1 .

9. The second wavelength conversion layer is arranged to cover the first wavelength conversion layer arranged on the light receiving surface of the photoelectric conversion element and at least a part of a side surface of the photoelectric conversion element. The photoelectric conversion device according to claim 8 .

10. further comprising an intermediate layer disposed between the first wavelength conversion layer and the second wavelength conversion layer; the intermediate layer is arranged so as to cover the first wavelength conversion layer arranged on the light receiving surface of the photoelectric conversion element and at least a part of a side surface of the photoelectric conversion element; The photoelectric conversion device according to claim 8 .

11. The second wavelength conversion layer has a thickness of 20 μm or more and 50 μm or less. The photoelectric conversion device according to claim 1 .

12. the first wavelength conversion layer has a transmittance of 80% or more for light having a wavelength of 200 nm to 450 nm; The second wavelength conversion layer has a transmittance of 90% or more for light having a wavelength of 200 nm to 450 nm. The photoelectric conversion device according to claim 1 .

13. The first wavelength converting material includes an organic phosphor. The photoelectric conversion device according to claim 1 .

14. The second wavelength converting material includes an inorganic phosphor. The photoelectric conversion device according to claim 1 .

15. The first wavelength conversion layer is an absorption layer that is disposed in contact with a light receiving surface of the photoelectric conversion element and contains a UV absorbing material; a conversion layer including the first wavelength converting material, the conversion layer being disposed on a surface of the UV absorbing layer opposite to a surface in contact with the photoelectric conversion element; Including, The photoelectric conversion device according to claim 1 .

16. The photoelectric conversion device according to any one of claims 1 to 15, a thrust generating device that generates thrust by utilizing the electric energy generated by the photoelectric conversion device; An aircraft equipped with

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