Display panel

Abstract

The present application discloses a display panel, which includes a light receiving device including a switching element, a first light receiving element, and a second light receiving element, the first light receiving element includes a first electrode, a first light receiving portion, and a first protective electrode, the second light receiving element includes a second electrode, a second light receiving portion, and a second protective electrode, the switching element includes a source and a drain, the first electrode is connected to the second electrode, and the first light receiving portion and the second light receiving portion are both connected to the source or the drain.

Description

Technical Field

[0001] This application relates to the field of display technologies, and particularly to display panels.

Background Art

[0002] Fingerprint authentication has already become a function provided in most display terminals such as mobile phones, tablets, and notebook computers. Currently, fingerprint authentication for display devices is shifting from capacitive fingerprint authentication to optical fingerprint authentication. Optical fingerprint authentication utilizes the refraction and reflection of light rays to form an image of the user's fingerprint, and then recognizes the characteristics of the fingerprint by means of an image authentication method. It has characteristics such as high imaging resolution and relatively easy image authentication, and can be provided below the display screen to form fingerprint authentication at the lower part of the screen.

[0003] Conventional light-receiving devices detect light rays with light-receiving elements, and the light-receiving elements are semiconductor devices that convert the received optical signals into electrical signals. However, with the improvement of pixel resolution, the area of the light-receiving elements is compressed by the in-plane light-emitting units, thereby causing a problem that the amount of electro-optical signals is low, which affects the detection sensitivity.

Summary of the Invention

Problems to be Solved by the Invention

[0004] This application provides a display panel for solving the technical problem that the small area of the light-receiving element results in a low amount of electrical signals, which affects the detection sensitivity.

Means for Solving the Problems

[0005] This application provides a display panel including at least one light-receiving device including a switching element, a first light-receiving element, and a second light-receiving element. The display panel further includes a substrate, and a first conductive layer provided on the substrate and including a first electrode and a second electrode connected to each other, A light-receiving layer that is provided on the side of the first conductive layer far from the substrate, includes a first light-receiving portion provided corresponding to the first electrode and spaced apart therefrom and a second light-receiving portion provided corresponding to the second electrode, and includes a metal oxide semiconductor. An insulating layer provided between the first conductive layer and the light-receiving layer. A second conductive layer that is provided on the side of the light-receiving layer far from the substrate and includes a first protection electrode electrically connected to the first light-receiving portion and a second protection electrode electrically connected to the second light-receiving portion. A third conductive layer that is provided on the side of the second conductive layer far from the substrate and includes a source and a drain of the switching element, and both the first protection electrode and the second protection electrode are electrically connected to the source or the drain of the switching element. Here, the first light-receiving element includes the first electrode, the first light-receiving portion, and the first protection electrode, and the second light-receiving element includes the second electrode, the second light-receiving portion, and the second protection electrode.

[0006] Preferably, in some embodiments of the present application, the display panel further includes A first active portion of the switching element, which is provided between the substrate and the first conductive layer. The source and the drain of the switching element are both electrically connected to the first active portion. The first active portion includes a first active layer including a polysilicon semiconductor or a metal oxide semiconductor.

[0007] Preferably, in some embodiments of the present application, the light-receiving device further includes a storage capacitor. The first conductive layer further includes a first capacitor electrode of the storage capacitor. The first capacitor electrode is electrically connected to both the first electrode and the second electrode. The third conductive layer further includes a second capacitor electrode of the storage capacitor. The second capacitor electrode is electrically connected to both the first protection electrode and the second protection electrode. The second capacitor electrode is provided so as to at least partially overlap the first capacitor electrode.

[0008] Preferably, in some embodiments of the present application, the display panel further includes a fourth conductive layer including a conductive portion whose orthographic projection onto the substrate partially overlaps with the orthographic projection of the first electrode and / or the second electrode onto the substrate.

[0009] Preferably, in some embodiments of the present application, the electron mobility of the metal oxide semiconductor in the light-receiving layer is 10 cm 2 / Vs or more, and the thickness of the insulating layer is 5 nm to 15 nm.

[0010] Preferably, in some embodiments of the present application, the display panel further includes a pixel driving circuit including a first driving transistor and a second driving transistor. The display panel further includes a second active portion of the first driving transistor, provided between the substrate and the light-receiving layer, the second active portion including a second active layer including a polysilicon semiconductor, and a third active portion of the second driving transistor, provided between the second active layer and the light-receiving layer, the third active portion including a third active layer including a metal oxide semiconductor, and a conductive layer provided between the second active layer and the third active layer, including a second gate of the first driving transistor, the second gate being provided so as to at least partially overlap with the second active portion. The second conductive layer further includes a third gate of the second driving transistor, the third gate being provided so as to at least partially overlap with the third active portion.

[0011] Preferably, in some embodiments of the present application, the first active portion includes a polysilicon semiconductor. The second active layer further includes the first active portion, the conductive layer further includes a first gate of the switching element, and the first gate is provided so as to at least partially overlap with the first active portion.

[0012] Preferably, in some embodiments of the present application, the first active portion includes a metal oxide semiconductor. The third active layer further includes the first active part, the conductive layer further includes a fourth gate of the switching element, the second conductive layer further includes a first gate of the switching element, the fourth gate is provided so as to at least partially overlap with the first active part, and the first gate is provided so as to at least partially overlap with the first active part.

[0013] Preferably, in some embodiments of the present application, the display panel further includes a plurality of light-emitting units arranged in a plurality of rows along a first direction and in a plurality of columns along a second direction. Here, a plurality of intersection regions are formed between the plurality of rows of the light-emitting units and the plurality of columns of the light-emitting units, and at most one of the first light-receiving elements or one of the second light-receiving elements is provided in each intersection region.

[0014] Preferably, in some embodiments of the present application, the first light-receiving element and the second light-receiving element are respectively located in two adjacent intersection regions, and the two adjacent intersection regions are located on the same side of the same light-emitting unit.

[0015] Preferably, in some embodiments of the present application, the display panel includes a plurality of the light-receiving devices. Here, the plurality of first light-receiving elements and the plurality of second light-receiving elements located in the same row are alternately arranged, the plurality of first light-receiving elements and the plurality of second light-receiving elements located in the same column are alternately arranged, and each first light-receiving element is connected in parallel to an adjacent second light-receiving element located in the same row and on the same side, or each first light-receiving element is connected in parallel to an adjacent second light-receiving element located in the same column and on the same side. Or, the plurality of first light-receiving elements and the plurality of second light-receiving elements located in the same row are alternately arranged, and those located in the same column are all the first light-receiving elements or the second light-receiving elements, and each first light-receiving element is connected in parallel to an adjacent second light-receiving element located in the same row and on the same side.

[0016] Preferably, in some embodiments of the present application, the light receiving device further includes a third light receiving element, wherein the third light receiving element includes a third electrode, a third protection electrode, and a third light receiving portion located between the third electrode and the third protection electrode, the third electrode and the first electrode are located in the same layer and are connected to each other, the third light receiving portion and the first light receiving portion are located in the same layer and are provided separately, and the third protection electrode is connected to the source or the drain. The first light receiving element, the second light receiving element, and the third light receiving element are respectively located in three intersection regions at three vertices of the same light emitting unit.

[0017] An embodiment of the present application further relates to a display panel including at least one light receiving device including a switching element, a first light receiving element, and a second light receiving element, and the display panel further includes a substrate, a first conductive layer provided on the substrate and including a first electrode and a second electrode connected to each other, a light receiving layer provided on a side of the first conductive layer far from the substrate, including a first light receiving portion provided corresponding to the first electrode and a second light receiving portion provided corresponding to the second electrode, and including a metal oxide semiconductor, an insulating layer provided between the first conductive layer and the light receiving layer, a second conductive layer provided on a side of the light receiving layer far from the substrate and including a first protection electrode electrically connected to the first light receiving portion and a second protection electrode electrically connected to the second light receiving portion, a third conductive layer provided on a side of the second conductive layer far from the substrate and including a source and a drain of the switching element, and the first protection electrode and the second protection electrode are both electrically connected to the source or the drain of the switching element, The first light receiving element includes the first electrode, the first light receiving portion, and the first protection electrode, and the second light receiving element includes the second electrode, the second light receiving portion, and the second protection electrode. The display panel further includes Provided between the substrate and the first conductive layer, including the first active portion of the switching element, the source and drain of the switching element include a first active layer electrically connected to the first active portion respectively, The display panel further includes a plurality of light-emitting units arranged in a plurality of rows along a first direction and in a plurality of columns along a second direction. A plurality of intersection regions are formed between the plurality of rows of the light-emitting units and the plurality of columns of the light-emitting units, and at most one of the first light-receiving elements or one of the second light-receiving elements is provided in each intersection region.

[0018] Preferably, in some embodiments of the present application, the light-receiving device further includes a storage capacitor including a first capacitor electrode and a second capacitor electrode provided to at least partially overlap. The first capacitor electrode is electrically connected to both the first electrode and the second electrode. The second capacitor electrode is electrically connected to both the first protection electrode and the second protection electrode, and the second capacitor electrode is provided to at least partially overlap the first capacitor electrode.

[0019] Preferably, in some embodiments of the present application, the display panel further includes a fourth conductive layer including a conductive portion whose orthographic projection on the substrate partially overlaps with the orthographic projection of the first electrode and / or the second electrode on the substrate.

[0020] Preferably, in some embodiments of the present application, the electron mobility of the metal oxide semiconductor in the light-receiving layer is 10 cm 2 / Vs or more, and the thickness of the insulating layer is 5 nm to 15 nm.

[0021] Preferably, in some embodiments of the present application, the display panel further includes a pixel driving circuit including a first driving transistor and a second driving transistor. The display panel further includes Provided between the substrate and the light-receiving layer, including a second active portion of the first driving transistor, the second active portion including a second active layer containing a polysilicon semiconductor, and Provided between the second active layer and the light-receiving layer, including a third active portion of the second driving transistor, the third active portion including a third active layer containing a metal oxide semiconductor, and Provided between the second active layer and the third active layer, including a second gate of the first driving transistor, and a conductive layer provided so that the second gate at least partially overlaps with the second active portion. The second conductive layer further includes a third gate of the second driving transistor, and the third gate is provided so as to at least partially overlap with the third active portion.

[0022] Preferably, in some embodiments of the present application, the first active portion includes a polysilicon semiconductor, The second active layer further includes the first active portion, the conductive layer further includes a first gate of the switching element, and the first gate is provided so as to at least partially overlap with the first active portion.

[0023] Preferably, in some embodiments of the present application, the first active portion includes a metal oxide semiconductor, The third active layer further includes the first active portion, the conductive layer further includes a fourth gate of the switching element, the second conductive layer further includes a first gate of the switching element, the fourth gate is provided so as to at least partially overlap with the first active portion, and the first gate is provided so as to at least partially overlap with the first active portion.

[0024] Preferably, in some embodiments of the present application, the first light-receiving element and the second light-receiving element are respectively located within two adjacent intersection regions, and the two adjacent intersection regions are located on the same side of the same light-emitting unit.

Advantages of the Invention

[0025] This application provides a display panel. The display panel includes at least one light-receiving device including a switching element, a first light-receiving element, and a second light-receiving element. Here, the first light-receiving element includes a first electrode, a first light-receiving portion, and a first protection electrode, and the second light-receiving element includes a second electrode, a second light-receiving portion, and a second protection electrode. Since the first electrode and the second electrode are connected, and both the first light-receiving portion and the second light-receiving portion are connected to the source or drain of the switching element, the first light-receiving element and the second light-receiving element are designed to be connected in parallel, increasing the light-receiving area of the light-receiving device, thereby improving the amount of electrical signal and the detection sensitivity. Furthermore, since the first electrode and the second electrode are provided in the same layer, and the first light-receiving portion and the second light-receiving portion are provided in the same layer, the film layer structure of the light-receiving device is simplified. Also, since an insulating layer is provided between the first electrode and the first light-receiving portion, the difference in potential barrier between the first electrode and the first light-receiving portion can be reduced, enabling electron tunneling to form a conductive path. By the same principle, since an insulating layer is provided between the second electrode and the second light-receiving portion, the difference in potential barrier between the second electrode and the second light-receiving portion can be reduced, enabling electron tunneling to form a conductive path, thereby improving the light-receiving performance of the light-receiving device.

Brief Description of the Drawings

[0026] Hereinafter, in order to more clearly explain the technical solutions in the embodiments of this application, the drawings necessary for the description of the embodiments are briefly introduced. Obviously, the drawings in the following description are only some embodiments of this application, and those skilled in the art can obtain other drawings based on these drawings without creative effort.

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Embodiments for Carrying out the Invention

[0027] Hereinafter, with reference to the drawings in the embodiments of the present application, the technical solution means in the embodiments of the present application will be clearly and completely described. It is clear that the described embodiments are only some embodiments of the present application, not all embodiments. Based on the embodiments in the present application, all other embodiments that can be obtained by those skilled in the art without creative efforts all belong to the protection scope of the present application.

[0028] In the description of the present application, the terms "first" and "second" are merely used for the purpose of description and should not be construed as indicating relative importance, or implying or suggesting the number of technical features shown. Thus, features limited by "first", "second", etc. may explicitly or implicitly include one or more of the above features and should not be construed as limiting the present application. Further, unless otherwise specifically defined or limited, the terms "connected to each other" and "connected" should be understood in a broad sense. For example, they may be mechanical connections, electrical connections, direct connections, indirect connections via an intermediate medium, or internal communication between two elements. A person skilled in the art can understand the specific meaning of the above terms in the present invention according to the specific situation.

[0029] The present application provides a display panel, which will be described in detail below. Note that the order of description of the following embodiments does not limit the preferred order of the embodiments of the present application.

[0030] Referring to FIG. 1, FIG. 1 is a first schematic structural diagram of the display panel provided in the present application. In an embodiment of the present application, the display panel 100 includes at least one light receiving device ST. The light receiving device ST includes a switching element T, a first light receiving element S1, and a second light receiving element S2.

[0031] The display panel 100 further includes a substrate 10, a first conductive layer 25, an insulating layer 26, a light receiving layer 27, a second conductive layer 28, and a third conductive layer 30.

[0032] Here, the first conductive layer 25 is provided on the substrate 10. The first conductive layer 25 includes a first electrode 251 and a second electrode 252 that are connected to each other.

[0033] The light-receiving layer 27 is provided on the side of the first conductive layer 25 far from the substrate 10. The light-receiving layer 27 includes a first light-receiving portion 271 provided corresponding to the first electrode 251 and a second light-receiving portion 272 provided corresponding to the second electrode 252. The light-receiving layer 27 includes a metal oxide semiconductor. The first light-receiving portion 271 and the second light-receiving portion 272 are provided spaced apart from each other.

[0034] The insulating layer 26 is provided between the first conductive layer 25 and the light-receiving layer 27. For example, the insulating layer 26 includes a first insulating portion 261 and a second insulating portion 262. The first insulating portion 261 is located at least between the first electrode 251 and the first light-receiving portion 271. The second insulating portion 262 is located at least between the second electrode 252 and the second light-receiving portion 272.

[0035] The second conductive layer 28 is provided on the side of the light-receiving layer 27 far from the substrate 10. The second conductive layer 28 includes a first protection electrode 281 and a second protection electrode 282. The first protection electrode 281 is electrically connected to the first light-receiving portion 271. The second protection electrode 282 is electrically connected to the second light-receiving portion 272.

[0036] The third conductive layer 30 is provided on the side of the second conductive layer 28 far from the substrate 10. The third conductive layer 30 includes the source 301 and the drain 302 of the switching element T. Both the first protection electrode 281 and the second protection electrode 282 are connected to the source 301 or the drain 302. For example, both the first protection electrode 281 and the second protection electrode 282 are connected to the source 301. Or for another example, both the first protection electrode 281 and the second protection electrode 282 are connected to the drain 302.

[0037] Here, the first light-receiving element S1 includes the first electrode 251, the first insulating portion 261, the first light-receiving portion 271, and the first protection electrode 281. The second light-receiving element S2 includes the second electrode 252, the second insulating portion 262, the second light-receiving portion 272, and the second protection electrode 282.

[0038] Here, the first electrode 251 may be directly connected to the second electrode 252, that is, the first electrode 251 and the second electrode 252 have an integral structure. The first electrode 251 and the second electrode 252 may be connected via a bridge wiring and a via, and the present application does not limit this. In the following embodiments of the present application, in each case, it is described by taking as an example that the first electrode 251 and the second electrode 252 are directly connected, but it should not be understood as limiting the present application.

[0039] In the embodiment of the present application, the light receiving device ST includes at least two light receiving elements, which are the first light receiving element S1 and the second light receiving element S2, respectively. Since the first electrode 251 and the second electrode 252 are connected to each other, both the first protection electrode 281 and the second protection electrode 282 are connected to the source 301 or the drain 302. Thereby, the parallel connection of the first light receiving element S1 and the second light receiving element S2 is realized, the light receiving area of the light receiving device ST is increased, and thereby, the amount of the electrical signal and the detection sensitivity are improved. Further, since the first electrode 251 and the second electrode 252 are provided in the same layer, the first light receiving portion 271 and the second light receiving portion 272 are provided in the same layer, and the first protection electrode 281 and the second protection electrode 282 are provided in the same layer, the film layer structure of the light receiving device ST is simplified. In addition, since the first insulating portion 261 is provided between the first electrode 251 and the first light receiving portion 271, the difference in the potential barrier between the first electrode 251 and the first light receiving portion 271 can be reduced, enabling electron tunneling to form a conductive path. For the same principle, since the second insulating portion 262 is provided between the second electrode 252 and the second light receiving portion 272, the difference in the potential barrier between the second electrode 252 and the second light receiving portion 272 can be reduced, enabling electron tunneling to form a conductive path. Thereby, compared with the case where a high work function metal is required to form a metal-semiconductor junction in the related art, the present application can form the light receiving device ST by using the first conductive layer 25 of a general material, and improve the light receiving performance of the light receiving device ST.

[0040] When the wiring space within the display panel 100 is limited, it should be understood that the light-receiving areas of the first light-receiving element S1 and the second light-receiving element S2 are both designed to be small, so that the light signals absorbed by the first light-receiving portion 271 and the second light-receiving portion 272 are small, and the generated current signals are also small. In an embodiment of the present application, the light-receiving device ST includes at least the first light-receiving element S1 and the second light-receiving element S2 designed to be connected in parallel, enlarging the overall light-receiving area of the light-receiving device ST, improving the amount of electrical signals, and thereby improving the detection sensitivity.

[0041] It should be noted that, in the embodiment of the present application, an example is given that one light-receiving device ST includes two light-receiving elements (the first light-receiving element S1 and the second light-receiving element S2) connected in parallel, but it cannot be understood as limiting the present application. For example, one light-receiving device ST may include three, five or more light-receiving elements connected in parallel.

[0042] In an embodiment of the present application, the switching element T further includes a first gate 253 and a first active portion 231. The first active portion 231 is provided corresponding to the first gate 253. The source 301 and the drain 302 are respectively connected to the first active portion 231. Here, the film layer structures of the first gate 253, the first active portion 231, the source 301 and the drain 302 will be described in the following embodiments, and detailed descriptions are omitted here.

[0043] In an embodiment of the present application, the light-receiving device ST further includes at least one storage capacitor C. The first capacitor plate of the storage capacitor C is electrically connected to both the first electrode 251 and the second electrode 252. The second capacitor plate of the storage capacitor C is connected to the source 301 or the drain 302.

[0044] For example, the light-receiving device ST includes only one storage capacitor C, and the first light-receiving element S1 and the second light-receiving element S2 share one storage element C, simplifying the structure of the light-receiving device ST.

[0045] Specifically, referring to FIGS. 1 and 2, FIG. 2 is a schematic circuit diagram of the light receiving device provided in the present application. The light receiving device ST includes a first light receiving element S1, a second light receiving element S2, a storage capacitor C, and a switching element T.

[0046] Here, a bias voltage V is connected to the first electrode 251 and the second electrode 252. bias When a light beam enters the first light receiving element S1 and the second light receiving element S2 of the light receiving device ST, the first light receiving portion 271 of the first light receiving element S1 and the second light receiving portion 272 of the second light receiving element S2 absorb the optical signal and convert the received optical signal into an electrical signal. The electrical signal is stored in the storage capacitor C. After the storage capacitor C is full, the switching element T is turned on, the storage capacitor C discharges, and the signal generated by the first light receiving element S1 and the second light receiving element S2 is transmitted to a detection signal line (not shown), and can be transmitted to a corresponding circuit through the detection signal line and processed, thereby realizing the detection of the light intensity.

[0047] In an embodiment of the present application, the material of the first active portion 231 may be single crystal silicon, low temperature polysilicon, or a metal oxide semiconductor. The metal oxide semiconductor may be IGZO (indium gallium zinc oxide), IGZTO (indium gallium zinc - tin oxide), IZO, IGO (gallium indium oxide), IGTO (indium gallium tin oxide), IZTO (indium zinc - tin oxide), ITO, ATZO (zinc - aluminum - tin oxide), AIZO (zinc - aluminum - indium oxide), etc.

[0048] In some embodiments, the electron mobility of the metal oxide semiconductor in the light receiving layer 27 is 10 cm 2 / Vs or more. Specifically, the materials of the first light receiving portion 271 and the second light receiving portion 272 are both IGZO. IGZO has high mobility. IGZO has good light sensing characteristics and low resistance in the visible light band, so that the light receiving performance of the light receiving device ST can be improved.

[0049] In some embodiments, the materials of the first active portion 231, the first light-receiving portion 271, and the second light-receiving portion 272 are all IGZO. In this way, the first light-receiving portion 271 and the second light-receiving portion 272 can be shared with the IGZO substrate film layer.

[0050] In some embodiments, the materials of the first active portion 231, the first light-receiving portion 271, and the second light-receiving portion 272 may be different. For example, the materials of the first light-receiving portion 271 and the second light-receiving portion 272 are indium gallium zinc oxide, and the material of the first active portion 231 may be single-crystalline silicon, low-temperature polysilicon, or other oxide semiconductor materials other than IGZO. In this way, the performance requirements of the switching element T and the first light-receiving element S1 and the second light-receiving element S2 can be simultaneously satisfied.

[0051] In some embodiments, the orthographic projection of the first protection electrode 281 on the substrate 10 overlaps with the orthographic projection of the first light-receiving portion 271 on the substrate 10, and the orthographic projection of the second protection electrode 282 on the substrate 10 overlaps with the orthographic projection of the second light-receiving portion 272 on the substrate 10. Thereby, patterning processing can be performed using the same photomask to form the light-receiving layer 27 and the second conductive layer 28, simplifying the processing process. Of course, the present application is not limited thereto.

[0052] In the embodiments of the present application, the second light-receiving element S2 is located on the side far from the drain 302 of the first light-receiving element S1. The first conductive layer 25 further includes a first capacitor electrode of the storage capacitor C. The first capacitor electrode is electrically connected to both the first electrode 251 and the second electrode 252. The third conductive layer 30 further includes a second capacitor electrode of the storage capacitor C. The second capacitor electrode is electrically connected to both the first protection electrode 281 and the second protection electrode 282. The second capacitor electrode and the first capacitor electrode are provided so as to at least partially overlap.

[0053] Specifically, the first capacitor electrode is a part of the drain 302, and the second capacitor electrode is a part of the first electrode 251. The orthographic projection of the drain 302 onto the substrate 10 overlaps at least partially with the orthographic projection of the first electrode 251 onto the substrate 10. That is, the drain 302 forms at least the first electrode 251 and the storage capacitor C. Since the first electrode 251 is connected to the second electrode 252, the first light-receiving element S1 and the second light-receiving element S2 share one storage capacitor C.

[0054] In the embodiment of the present application, the display panel 100 further includes a first active layer 23 and a gate insulating layer 24. The first active layer 23 is provided on the side of the first conductive layer 25 closer to the substrate 10. The gate insulating layer 24 is provided between the first active layer 23 and the first conductive layer 25. The first active layer 23 includes a first active portion 231. The first conductive layer 25 further includes a first gate 253. The first active portion 231 is provided corresponding to the first gate 253.

[0055] In the embodiment of the present application, the first gate 253, the first electrode 251, and the second electrode 252 are provided in the same layer, which can omit a photomask and simplify the processing process. Also, the thickness of the display panel 100 can be reduced.

[0056] In the embodiment, the display panel 100 further includes an interlayer insulating layer 29. The interlayer insulating layer 29 is located between the first conductive layer 25 and the third conductive layer 30. The interlayer insulating layer 29 has a first via 29a, a second via 29b, and a third via 29c. The first via 29a penetrates the interlayer insulating layer 29 and extends to the side of the first active portion 231 farther from the substrate 10. The source 301 is connected to the first active portion 231 through the first via 29a. The second via 29b penetrates the interlayer insulating layer 29 and extends to the side of the first active portion 231 farther from the substrate 10. The drain 302 is connected to the first active portion 231 through the second via 29b. The third via 29c exposes the surface of the first protection electrode 281 on the side farther from the substrate 10. The drain 302 is connected to the first protection electrode 281 through the third via 29c.

[0057] Here, the first active part 231 includes a source region, a drain region, and a channel region (not shown) located between the source region and the drain region. The source 301 is connected to the source region. The drain 302 is connected to the drain region. Since the source region and the drain region are made conductive by a method such as ion doping, the conductivity between the source 301 and the drain 302 and the first active part 231 can be improved.

[0058] In the embodiments of the present application, although the switching element T is described by taking a top-gate type transistor as an example, it should not be understood as limiting the present application. In some embodiments of the present application, the switching element T may be a bottom-gate type transistor or a double-gate transistor.

[0059] In the embodiments of the present application, the substrate 10 may include, but is not limited to, a base layer 11, a barrier layer 12, a first insulating layer 13, and a second insulating layer 14 laminated in order from bottom to top. Here, the material of the base layer 11 may be glass or a flexible material. The materials of the barrier layer 12, the first insulating layer 13, and the second insulating layer 14 may be silicon oxide, silicon nitride, etc. The barrier layer 12, the first insulating layer 13, and the second insulating layer 14 can function to block water and oxygen.

[0060] In the embodiments of the present application, the first conductive layer 25 is made of a material with excellent conductivity and excellent light-shielding properties. For example, the material of the first conductive layer 25 may be molybdenum, titanium, molybdenum / copper (laminated), molybdenum / titanium (laminated), or titanium / aluminum (laminated), etc. In the embodiments of the present application, when the first electrode 251 and the second electrode 252 are manufactured with a conductive material having light-shielding properties, it is possible to avoid the light rays on the substrate 10 side from entering the first light-receiving element S1 and the second light-receiving element S2, thereby improving the detection accuracy of the light-receiving device ST.

[0061] In an embodiment of the present application, the material of the insulating layer 26 may be silicon nitride, silicon oxide, or the like. The thickness of the insulating layer 26 is very thin, generally about 10 nm, for example, 5 nm to 15 nm. When the first light receiving element S1 and the second light receiving element S2 operate, electrons pass through the first light receiving element S1 and the second light receiving element S2.

[0062] In an embodiment of the present application, the materials of the gate insulating layer 24 and the interlayer insulating layer 29 may be silicon oxide, silicon nitride, aluminum trioxide, and their laminates.

[0063] In an embodiment of the present application, the second conductive layer 28 is a transparent conductive material, thereby ensuring that light rays can be incident on the first light receiving element S1 and the second light receiving element S2, and improving the sensing sensitivity of the light receiving device ST. For example, the material of the second conductive layer 28 may be ITO, IZO, or the like.

[0064] In an embodiment of the present application, the display panel 100 further includes a fourth conductive layer 21 and a buffer layer 22. The fourth conductive layer 21 is provided on the side of the first active layer 23 close to the substrate 10. The buffer layer 22 is provided between the first active layer 23 and the fourth conductive layer 21. The fourth conductive layer 21 includes a light shielding portion 211. The light shielding portion 211 is provided corresponding to the first active portion 231. For example, the orthographic projection of the light shielding portion 211 on the substrate 10 covers at least the orthographic projection of the channel portion of the first active portion 231 on the substrate 10.

[0065] Here, the light shielding portion 211 can block light rays incident from the direction in which the substrate 10 is far from the light shielding portion 211, and further weaken the interference of external light rays on the first active portion 231, further improving the operating performance of the light receiving device ST.

[0066] In some embodiments, further, the light shielding portion 211 can be connected to the source 301 or the drain 302 to form an equipotential, and it can be avoided that the voltage change of the light shielding portion 211 affects the electrical performance of the first active portion 231.

[0067] In an embodiment of the present application, the third conductive layer 30 may further include an input electrode 303. The input electrode 303 is connected to the first electrode 251 or the second electrode 252. The input electrode 303 is used to apply a bias voltage V bias .

[0068] For example, the interlayer insulating layer 29 further includes a connection hole 29d. The connection hole 29d extends to the surface of the second electrode 252 far from the substrate 10. The input electrode 303 is connected to the second electrode 252 through the connection hole 29d.

[0069] In an embodiment of the present application, the first conductive layer 25 further includes at least one scanning line, and the scanning line can be time-division multiplexed to the first electrode 251 and the second electrode 252. Time-division multiplexing means that the scanning line may be used to transmit a scanning signal, or may be used as the first electrode 251 and the second electrode 252 for transmitting the bias voltage V bias . Specifically, the scanning line is respectively connected to a gate driving circuit and a signal line for providing the bias voltage V bias . When performing fingerprint authentication, the signal line transmits the bias voltage V bias to the scanning line, and when displaying, the gate driving circuit provides a scanning signal to the scanning line.

[0070] Thereby, the wiring in the display panel 100 can be reduced, and the sizes of the first light receiving element S1 and the second light receiving element S2 can be increased, thereby increasing the light receiving area. When a plurality of light receiving devices ST are provided in the display panel 100, each scanning line is multiplexed only to the first electrode 251 and the second electrode 252 that are connected to each other within one light receiving device ST.

[0071] Referring to FIG. 3, FIG. 3 is a second schematic structural diagram of the display panel provided in the present application. The difference from the display panel 100 shown in FIG. 1 is that in the implementation of the present application, the display panel 100 includes a fourth conductive layer 21. The fourth conductive layer 21 includes a conductive portion 212. The orthographic projection of the conductive portion 212 onto the substrate 10 at least partially overlaps with the orthographic projection of the drain 302 onto the substrate 10. That is, the conductive portion 212 and the drain 302 form the storage capacitor C.

[0072] In the embodiment of the present application, the conductive portion 212 is used to form the drain 302 and the storage capacitor C, and in the direction from the switching element T to the first light receiving element S1, the length of the first electrode 251 can be shortened. When the cross-sectional area of the first electrode 251 is constant, the length of the first electrode 251 is shortened, thereby reducing the resistance of the first electrode 251 and reducing the load of the first light receiving element S1 and the second light receiving element S2.

[0073] Furthermore, the fourth conductive layer 21 may further include a light shielding portion 211. The conductive portion 212 and the light shielding portion 211 are provided in the same layer, and the photomask step can be omitted to simplify the processing process. Naturally, in some embodiments, the conductive portion 212 and the light shielding portion 211 may be provided in different layers.

[0074] Referring to FIG. 4, FIG. 4 is a third schematic structural diagram of the display panel provided in the present application. The difference from the display panel 100 shown in FIG. 1 is that in the implementation of the present application, the fourth conductive layer 21 further includes a conductive portion 212. The orthographic projection of the conductive portion 212 onto the substrate 10 at least partially overlaps with the orthographic projection of the first electrode 251 and / or the second electrode 252 onto the substrate 10. That is, the conductive portion 212 and the first electrode 251 and / or the second electrode 252 form the storage capacitor C.

[0075] In the embodiment of the present application, the conductive part 212 forms the storage capacitor C with the first electrode 251 and / or the second electrode 252, and the extension length of the drain 302 from the switching element T to the first light receiving element S1 can be shortened. Thereby, the distance between the switching element T and the first light receiving element S1 is reduced, and it should be understood that the wiring of the display panel 100 is reduced. And because the conductive part 212 is located below the first electrode 251 and / or the second electrode 252, by adjusting the area of the conductive part 212, the capacitance value of the storage capacitor C can be adjusted without occupying extra wiring space. Thereby, the wiring space of the first light receiving element S1 and the second light receiving element S2 can be increased, the light receiving area of the light receiving device can be further improved, and the sensitivity can be improved.

[0076] Referring to FIG. 5, FIG. 5 is a fourth schematic structural diagram of the display panel provided in the present application. The difference from the display panel 100 shown in FIG. 1 is that in the implementation of the present application, the first active layer 23 includes a first active part 231 and an electrode part 232 that is electrically conductive.

[0077] Here, the first active part 231 is provided corresponding to the first gate 253. The source 301 and the drain 302 are respectively connected to the first active part 231. The orthographic projection of the electrode part 232 on the substrate 10 partially overlaps the orthographic projection of the first electrode 251 and / or the second electrode 252 on the substrate 10.

[0078] Here, a process such as ion doping can be used to conduct the electrode part 232 to improve the conductivity of the electrode part 232.

[0079] In the embodiment of the present application, the first electrode 251 and / or the second electrode 252 and the storage capacitor C are formed via the conductorized electrode portion 232. On the one hand, the distance between the switching element T and the first light receiving element S1 can be reduced, thereby reducing the wiring within the display panel 100, increasing the wiring space for the first light receiving element S1 and the second light receiving element S2, further improving the light receiving area of the light receiving device, and improving the sensitivity. On the other hand, since only the buffer layer 22 is provided between the electrode portion 232 and the first electrode 251 (second electrode 252), the distance between the two plates of the storage capacitor C can be reduced, thereby improving the capacitance value of the storage capacitor C.

[0080] Referring to FIG. 6, FIG. 6 is a fifth schematic structural diagram of the display panel provided in the present application. The difference from the display panel 100 shown in FIG. 1 is that in the implementation of the present application, the insulating layer 26 further includes a third insulating portion 263. The orthographic projections of the first insulating portion 261 and the second insulating portion 262 on the substrate 10 overlap the orthographic projections of the first electrode 251 and the second electrode 252 on the substrate 10. The orthographic projection of the third insulating portion 263 on the substrate 10 overlaps the orthographic projection of the first gate 253 on the substrate 10.

[0081] In the embodiment of the present application, patterning processing for the first conductive layer 25 and the insulating layer 26 can be realized using the same photomask, simplifying the processing process. Furthermore, since the first insulating portion 261 covers the first electrode 251 and the second electrode 252, and the third insulating portion 263 covers the first gate 253, when the light receiving layer 27 is manufactured, the insulating layer 26 can play a role in protecting the first electrode 251, the second electrode 252, and the first gate 253, improving the stability of the light receiving device.

[0082] Referring to FIG. 7, FIG. 7 is a sixth schematic structural diagram of the display panel provided in the present application. The difference from the display panel 100 shown in FIG. 1 is that, at least in the implementation of the present application, the display panel 100 further includes a pixel driving circuit. The pixel driving circuit includes a first driving transistor T1 and a second driving transistor T2.

[0083] The display panel 100 further includes a second active layer 32, a third active layer 33, and a conductive layer 34.

[0084] The second active layer 32 is provided between the substrate 10 and the light-receiving layer 27. The second active layer 32 includes a second active portion 321 of the first driving transistor T1. The second active portion 321 includes a polysilicon semiconductor.

[0085] The third active layer 33 is provided between the second active layer 32 and the light-receiving layer 27. The third active layer 33 includes a third active portion 331 of the second driving transistor T2. The third active portion 331 includes a metal oxide semiconductor.

[0086] The conductive layer 34 is provided between the second active layer 32 and the third active layer 33. The conductive layer 34 includes a second gate 341 of the first driving transistor T1. The second gate 341 and the second active portion 321 are provided so as to at least partially overlap.

[0087] The second conductive layer 28 further includes a third gate 283 of the second driving transistor T2. The third gate 283 and the third active portion 331 are provided so as to at least partially overlap.

[0088] In some embodiments, referring to FIG. 7, the first active portion 231 includes a polysilicon semiconductor. The second active layer 32 further includes the first active portion 231. The conductive layer 34 further includes a first gate 253 of the switching element T. The first gate 253 and the first active portion 231 are provided so as to at least partially overlap. That is, the first active layer 23 and the second active layer 32 are the same active layer.

[0089] Here, the first conductive layer 25 further includes a third electrode 255. The third electrode 255, the second gate 341, and the first insulating layer 13 located between the third electrode 255 and the second gate 341 constitute a capacitor. The conductive layer 34 further includes a fifth gate 343 of the second driving transistor T2, that is, the second driving transistor T2 has a double-gate structure.

[0090] Here, the third conductive layer 30 further includes a first source 304 and a first drain 305 of the first driving transistor T1, and a second source 306 and a second drain 307 of the second driving transistor T2. The first drain 305 and the second source 306 are connected via a via.

[0091] In some embodiments, referring to FIG. 8, FIG. 8 is a seventh schematic structural diagram of the display panel provided in the present application. The difference from the display panel 100 shown in FIG. 7 is that in this embodiment, the first active portion 231 includes a metal oxide semiconductor. The third active layer 33 further includes the first active portion 231.

[0092] Here, the conductive layer 34 further includes a fourth gate 342 of the switching element T. The second conductive layer 28 further includes a first gate 253 of the switching element T. The fourth gate 342 and the first active portion 231 are provided so as to at least partially overlap. The first gate 253 and the first active portion 231 are provided so as to at least partially overlap. That is, the switching element T has a double-gate structure.

[0093] Referring to FIG. 9, FIG. 9 is an eighth schematic structural diagram of the display panel provided in the present application. The difference from the display panel 100 shown in FIG. 1 is at least that in the implementation of the present application, the light-receiving layer 27 further includes the first active portion 231 of the switching element T. The gate insulating layer 24 has an opening 24a. The opening 24a exposes the surfaces of the first light-receiving portion 271 and the second light-receiving portion 272 on the side far from the substrate 10. The first protection electrode 281 and the second protection electrode 282 are provided in the opening 24a.

[0094] In the embodiment of the present application, the first active portion 231, the first light-receiving portion 271, and the second light-receiving portion 272 are provided in the same layer, which can simplify the processing process. Further, by forming the gate insulating layer 24 first and then forming the first protection electrode 281 and the second protection electrode 282, it is possible to avoid damaging the first active portion 231 when patterning the second conductive layer 28, thereby improving the stability of the switching element T.

[0095] Furthermore, in some embodiments, referring to FIG. 9, the display panel 100 further includes a pixel circuit. The pixel circuit includes a first driving transistor T1 and a second driving transistor T2.

[0096] Here, the light-receiving layer 27 further includes a first active portion 231 of the switching element T and a third active portion 331 of the second driving transistor T2. The first active portion 231 of the switching element T, the third active portion 331 of the second driving transistor T2, the first light-receiving portion 271, and the second light-receiving portion 272 are provided in the same layer.

[0097] Specifically, the display panel 100 further includes a second active layer 32, a conductive layer 34, and a fifth conductive layer 31. The second active layer 32 is provided between the substrate 10 and the light-receiving layer 27. The conductive layer 34 is provided between the second active layer 32 and the light-receiving layer 27. The fifth conductive layer 31 is provided on the side of the gate insulating layer 24 far from the substrate 10. The second active layer 32 includes a second active portion 321 of the first driving transistor T1. The second active portion 321 includes a polysilicon semiconductor. The conductive layer 34 includes a second gate 341 of the first driving transistor T1 and an electrode portion 232. The second gate 341 and the second active portion 321 are provided so as to at least partially overlap. The fifth conductive layer 31 includes a first gate 253 of the switching element T and a third gate 283 of the second driving transistor T2.

[0098] The first conductive layer 25 further includes a fourth gate 342 of the switching element T, a fifth gate 343 of the second driving transistor T2, and a third electrode 255. The third conductive layer 30 further includes a first source 304 and a first drain 305 of the first driving transistor T1, and a second source 306 and a second drain 307 of the second driving transistor T2. The first drain 305 and the second source 306 are connected via a via.

[0099] Referring to FIG. 10, FIG. 10 is a ninth schematic structural diagram of the display panel provided in the present application. The difference from the display panel 100 shown in FIG. 9 is that in the implementation of the present application, the second active portion 321 of the first driving transistor T1 and the first active portion 231 of the switching element T are provided in the same layer. The third active portion 331 of the second driving transistor T2, the first light receiving portion 271, and the second light receiving portion 272 are provided in the same layer.

[0100] Specifically, the second active layer 32 includes the second active portion 321 of the first driving transistor T1 and the first active portion 231 of the switching element T. The conductive layer 34 includes the second gate 341 of the first driving transistor T1 and the first gate 253 of the switching element T.

[0101] In the embodiment of the present application, LTPO (Low Temperature Poly-Oxide) technology is used, and the power consumption of the display panel 100 can be reduced. In addition, the switching element T and the light receiving device ST can be manufactured by the same process in the same layer as the in-plane LTPO structure, the thickness of the display panel 100 can be reduced, and the processing process can be simplified.

[0102] Referring to FIG. 11, FIG. 11 is a first schematic top view of the display panel provided in the present application. The display panel 100 further includes a plurality of light emitting units 40. The plurality of light emitting units 40 are arranged in a plurality of rows along the first direction Y and in a plurality of columns along the second direction X. The first direction Y intersects the second direction X. For example, the first direction Y is perpendicular to the second direction X.

[0103] Here, a plurality of intersection regions 40a are formed between the plurality of rows of light emitting units 40 and the plurality of columns of light emitting units 40. At most one first light receiving element S1 or one second light receiving element S2 is provided in each intersection region 40a.

[0104] In the embodiments of the present application, since the first light-receiving element S1 and the second light-receiving element S2 are provided in different intersection regions 40a, both the first light-receiving element S1 and the second light-receiving element S2 are provided offset from the light-emitting unit 40, avoiding affecting the display effect of the display panel. Further, the first light-receiving element S1 and the second light-receiving element S2 are provided in different intersection regions 40a, which can improve the wiring space for the first light-receiving element S1 and the second light-receiving element S2. Furthermore, the light-receiving areas of the first light-receiving element S1 and the second light-receiving element S2 can be increased, further improving the amount of electrical signal.

[0105] In the embodiments of the present application, in order to improve the test sensitivity, each intersection region 40a can be provided with either the first light-receiving element S1 or the second light-receiving element S2. Naturally, according to the requirements of the actual product, the distribution density of the first light-receiving element S1 and the second light-receiving element S2 can be set.

[0106] As shown in FIG. 11, the first light-receiving element S1 and the second light-receiving element S2 are respectively located in two adjacent intersection regions 40a. The two adjacent intersection regions 40a are located on the same side of the same light-emitting unit 40.

[0107] Thereby, the distance between the first light-receiving element S1 and the second light-receiving element S2 in the same light-receiving device ST can be reduced, facilitating the realization of the parallel connection between the first light-receiving element S1 and the second light-receiving element S2 and shortening the wiring length.

[0108] In some embodiments of the present application, the display panel 100 includes a plurality of light-receiving devices ST. The plurality of first light-receiving elements S1 and the plurality of second light-receiving elements S2 located in the same row are alternately arranged, and the plurality of first light-receiving elements S1 and the plurality of second light-receiving elements S2 located in the same column are alternately arranged. Each first light-receiving element S1 is connected in parallel to the adjacent second light-receiving element S2 located in the same row and on the same side. Alternatively, each first light-receiving element S1 is connected in parallel to the adjacent second light-receiving element S2 located in the same column and on the same side.

[0109] For example, as shown in FIG. 11, each first light-receiving element S1 is connected in parallel to an adjacent second light-receiving element S2 that is in the same row and located on the right side of the first light-receiving element S1. Naturally, each first light-receiving element S1 may also be connected in parallel to an adjacent second light-receiving element S2 that is in the same row and located on the left side of the first light-receiving element S1.

[0110] It should be understood that according to the embodiments of the present application, a plurality of light-receiving devices ST are alternately provided within the display panel 100, the distribution of the plurality of light-receiving devices ST within the display panel 100 becomes more uniform, and the uniformity of the detection sensitivity of the display panel 100 can be improved.

[0111] In some embodiments of the present application, as shown in FIG. 12, a plurality of first light-receiving elements S1 and a plurality of second light-receiving elements S2 located in the same row are alternately arranged, and those located in the same column are all either first light-receiving elements S1 or second light-receiving elements S2. Each first light-receiving element S1 is connected in parallel to an adjacent second light-receiving element S2 that is in the same row and on the same side.

[0112] It should be understood that according to the embodiments of the present application, by making the positional relationships between the first light-receiving elements S1 and the second light-receiving elements S2 within each light-receiving device ST all the same, the structural regularity of the plurality of light-receiving devices S is improved, and the manufacturing difficulty is reduced.

[0113] In some embodiments of the present application, as shown in FIGS. 1 and 13, the light-receiving device ST further includes a third light-receiving element S3 (not shown in FIG. 1).

[0114] Here, the third light-receiving element S3 includes a third electrode, a third protection electrode, and a third light-receiving portion located between the third electrode and the third protection electrode. The third electrode, the first electrode 251, and the second electrode 252 are located in the same layer and are connected to each other. The third light-receiving portion, the first light-receiving portion 271, and the second light-receiving portion 272 are located in the same layer and are provided spaced apart. The third protection electrode, the first protection electrode 281, and the second protection electrode 282 are located in the same layer. The third protection electrode is connected to the source 301 or the drain 302.

[0115] The first light-receiving element S1, the second light-receiving element S2, and the third light-receiving element S3 are respectively located within three intersection regions 40a at three vertices of the same light-emitting unit 40.

[0116] Specifically, in the same row of light-emitting units 40, for every two adjacent light-receiving devices ST, the two first light-receiving elements S1 are provided diagonally, the two second light-receiving elements S2 are provided diagonally, and the two third light-receiving elements S3 are located in the same row, thereby improving the uniformity of the distribution of the plurality of light-receiving devices ST.

[0117] In the embodiment of the present application, a light-receiving device ST including the first light-receiving element S1, the second light-receiving element S2, and the third light-receiving element S3 is provided, and the light-receiving area of the light-receiving device ST is further improved. The first light-receiving element S1, the second light-receiving element S2, and the third light-receiving element S3 are respectively provided within three intersection regions 40a at three vertices of the same light-emitting unit 40, and the distance between the first light-receiving element S1, the second light-receiving element S2, and the third light-receiving element S3 within the same light-receiving device ST can be reduced, facilitating the realization of the parallel connection between the first light-receiving element S1, the second light-receiving element S2, and the third light-receiving element S3, and shortening the wiring length.

[0118] As described above, the display panel provided in the embodiment of the present application has been introduced in detail. In this specification, specific examples are used to describe the principle and embodiments of the present application. However, the description of the above embodiments is only for helping to understand the method and core concept of the present application. Also, those skilled in the art may make changes to any specific embodiments and application scopes based on the concept of the present application. Summing up the above, the content of this specification should not be understood as limiting the present application.

Description of Reference Numerals

[0119] 10 Substrate 11 Base layer 12 Barrier layer 13 First insulating layer 14 Second insulating layer 21 Fourth conductive layer 22 Buffer layer 23 First active layer 24 Gate insulating layer 24a Opening 25 First conductive layer 26 Insulating layer 27 Light-receiving layer 28 Second conductive layer 29 Interlayer insulating layer 29a First via 29b Second via 29c Third via 29d Connection hole 30 Third conductive layer 31 Fifth conductive layer 32 Second active layer 33 Third active layer 34 Conductive layer 40 Light-emitting unit 40a Intersection region 100 Display panel 211 Light-shielding part 212 Conductive part 231 First active part 232 Electrode part 251 First electrode 252 Second electrode 253 First gate 255 Third electrode 261 First insulating part 262 Second insulating part 263 Third insulating part 271 First light-receiving part 272 Second light-receiving part 281 First protection electrode 282 Second protection electrode 283 Third gate 301 Source 302 Drain 303 Input electrode 304 First source 305 First drain 306 Second source 307 Second drain 321 Second active part 331 Third active part 341 Second gate 342 Fourth gate 343 Fifth Gate C Accumulation Capacitor C Memory Element S Light-Receiving Device S1 First Light-Receiving Element S2 Second Light-Receiving Element S3 Third Light-Receiving Element ST Light-Receiving Device T Switching Element T1 First Driving Transistor T2 Second Driving Transistor

Claims

1. A display panel including at least one light-receiving device including a switching element, a first light-receiving element, and a second light-receiving element, wherein the display panel further includes a substrate, a first conductive layer provided on the substrate and including a first electrode and a second electrode connected to each other, a light-receiving layer provided on the side of the first conductive layer far from the substrate, including a first light-receiving portion provided corresponding to the first electrode and a second light-receiving portion provided corresponding to the second electrode, and including a metal oxide semiconductor, an insulating layer provided between the first conductive layer and the light-receiving layer, a second conductive layer provided on the side of the light-receiving layer far from the substrate, including a first protection electrode electrically connected to the first light-receiving portion and a second protection electrode electrically connected to the second light-receiving portion, a third conductive layer provided on the side of the second conductive layer far from the substrate, including a source and a drain of the switching element, and the first protection electrode and the second protection electrode are both electrically connected to the source or the drain of the switching element, Here, the first light-receiving element includes the first electrode, the first light-receiving portion, and the first protection electrode, and the second light-receiving element includes the second electrode, the second light-receiving portion, and the second protection electrode, further including a plurality of light-emitting units arranged in a plurality of rows along a first direction and in a plurality of columns along a second direction, Here, a plurality of intersection regions are formed between the plurality of rows of the light-emitting units and the plurality of columns of the light-emitting units, and at most one of the first light-receiving elements or one of the second light-receiving elements is provided in each of the intersection regions, The first light-receiving element and the second light-receiving element are respectively located in two adjacent intersection regions, and the two adjacent intersection regions are located on the same side of the same light-emitting unit, Display panel.

2. Provided between the substrate and the first conductive layer, including a first active portion of the switching element, and further including a first active layer in which the source and drain of the switching element are electrically connected to the first active portion respectively. The display panel according to claim 1.

3. The light receiving device further includes a storage capacitor including a first capacitor electrode and a second capacitor electrode provided so as to at least partially overlap. The first capacitor electrode is electrically connected to both the first electrode and the second electrode. The second capacitor electrode is electrically connected to both the first protection electrode and the second protection electrode, and the second capacitor electrode is provided so as to at least partially overlap with the first capacitor electrode. The display panel according to claim 2.

4. Further including a fourth conductive layer including a conductive portion, and a projection of the conductive portion onto the substrate partially overlaps a projection of the first electrode and / or the second electrode onto the substrate. The display panel according to claim 3.

5. The electron mobility of the metal oxide semiconductor in the light receiving layer is 10 cm ２ / Vs or more, and the thickness of the insulating layer is 5 nm to 15 nm. The display panel according to claim 3.

6. Further including a pixel driving circuit including a first driving transistor and a second driving transistor. The display panel further includes Provided between the substrate and the light receiving layer, including a second active portion of the first driving transistor, the second active portion including a second active layer including a polysilicon semiconductor, and Provided between the second active layer and the light receiving layer, including a third active portion of the second driving transistor, the third active portion including a third active layer including a metal oxide semiconductor. A conductive layer provided between the second active layer and the third active layer, including a second gate of the first driving transistor, the second gate being provided so as to at least partially overlap with the second active portion. The second conductive layer further includes a third gate of the second driving transistor, and the third gate is provided so as to at least partially overlap with the third active portion. The display panel according to claim 2.

7. The first active portion includes a polysilicon semiconductor. The second active layer further includes the first active portion, the conductive layer further includes a first gate of the switching element, and the first gate is provided so as to at least partially overlap with the first active portion. The display panel according to claim 6.

8. The first active portion includes a metal oxide semiconductor. The third active layer further includes the first active portion, the conductive layer further includes a fourth gate of the switching element, the second conductive layer further includes a first gate of the switching element, the fourth gate is provided so as to at least partially overlap with the first active portion, and the first gate is provided so as to at least partially overlap with the first active portion. The display panel according to claim 6.

9. Including a plurality of the light receiving devices. Here, a plurality of the first light receiving elements and a plurality of the second light receiving elements located in the same row are alternately arranged, a plurality of the first light receiving elements and a plurality of the second light receiving elements located in the same column are alternately arranged, and each of the first light receiving elements is connected in parallel to an adjacent second light receiving element located in the same row and on the same side, or each of the first light receiving elements is connected in parallel to an adjacent second light receiving element located in the same column and on the same side. Alternatively, the plurality of first light-receiving elements and the plurality of second light-receiving elements located in the same row are alternately arranged, and those located in the same column are all either the first light-receiving elements or the second light-receiving elements. Each of the first light-receiving elements is connected in parallel to an adjacent second light-receiving element located in the same row and on the same side. The display panel according to claim 1.

10. The light-receiving device further includes a third light-receiving element. Here, the third light-receiving element includes a third electrode, a third protection electrode, and a third light-receiving portion located between the third electrode and the third protection electrode. The third electrode and the first electrode are located in the same layer and are connected to each other. The third light-receiving portion and the first light-receiving portion are located in the same layer and are provided separately. The third protection electrode is connected to the source or the drain. The first light-receiving element, the second light-receiving element, and the third light-receiving element are respectively located within three of the intersection regions at three vertices of the same light-emitting unit. The display panel according to claim 1.

Images