Method for manufacturing a semiconductor light-emitting device

Abstract

To provide a method of manufacturing a semiconductor light-emitting device, and a semiconductor light-emitting device.SOLUTION: A method of manufacturing a semiconductor light-emitting device includes: providing a first substrate 20; providing a semiconductor epitaxial stack 110; providing a first adhesive layer 135 connecting the first substrate and the semiconductor epitaxial stack; patterning the semiconductor epitaxial stack into a plurality of epitaxial units and separating the epitaxial units from the first substrate; providing a second substrate 30 with a surface; transferring a plurality of second epitaxial units to the surface of the second substrate; cutting the first substrate to form a plurality of first semiconductor light-emitting devices; and cutting the second substrate to form a plurality of second semiconductor light-emitting devices. The plurality of epitaxial units includes a plurality of first epitaxial units 201 and the plurality of second epitaxial units 202. Each of the first epitaxial units has a geometric shape and a first area, and each of the second epitaxial units has a second geometric shape and a second area.SELECTED DRAWING: Figure 1F

Description

Technical Field

[0001] The present invention relates to a method for manufacturing a semiconductor light-emitting device, and more particularly, to a method for manufacturing a semiconductor light-emitting device that forms two different types of semiconductor epitaxial layers on a single substrate.

Background Art

[0002] In the rapid progress of science and technology, the contribution of semiconductor light-emitting devices to information transmission and energy conversion is extremely large. Taking system operation as an example, semiconductor light-emitting devices are useful in, for example, optical fiber communication, optical storage technology, and military systems. Based on the energy conversion method, semiconductor light-emitting devices are generally classified into the following three types. That is, those that convert electrical energy into light emission, such as light-emitting diodes (LEDs) and laser diodes; those that convert optical signals into electrical signals, such as photodetectors; and those that convert light emission energy into electric power energy, such as solar cells.

[0003] In a semiconductor light-emitting device, the growth substrate plays a very important role. All semiconductor epitaxial structures required for the formation of a semiconductor light-emitting device grow on and are supported by the substrate. Therefore, selecting an appropriate growth substrate is an important factor that determines the quality of device growth in a semiconductor light-emitting device.

[0004] However, a good device growth substrate is not necessarily a good device mounting substrate. Taking an LED as an example, in the known technology of red light devices, in order to improve the growth quality of the device, a gallium arsenide (GaAs) substrate with a lattice constant close to that of the semiconductor epitaxial structure but opaque is selected as the growth substrate. However, for an LED device whose purpose is to process light emission, in the processing process, the light emission efficiency of the device will be reduced due to the opaque growth substrate.

[0005] In order to meet different requirements for the growth substrate and the mounting substrate of a semiconductor light-emitting device, a substrate transfer technique has emerged. Specifically, first, a semiconductor epitaxial structure is grown on the growth substrate, and then the grown semiconductor epitaxial structure is transferred to the mounting substrate to facilitate subsequent device processing. After bonding the semiconductor epitaxial structure and the mounting substrate, the removal of the original growth substrate becomes one of the key points of the transfer technique.

[0006] The methods for removing the growth substrate mainly include: etching and dissolving the original growth substrate using an etching solution, cutting and removing it by a physical method, or forming a sacrificial layer between the growth substrate and the semiconductor epitaxial structure in advance, and then removing the sacrificial layer by etching to separate the growth substrate from the semiconductor. However, both the method of dissolving the substrate with an etching solution and the method of physically cutting and removing it are destructive to the original growth substrate. The fact that the growth substrate cannot be reused is undoubtedly regarded as a waste of materials in an era when environmental protection and energy conservation are emphasized. On the other hand, in the method of separation using a sacrificial layer, one of the current research directions is how to perform effective selective transfer for semiconductor light-emitting devices.

Summary of the Invention

Problems to be Solved by the Invention

[0007] An object of the present invention is to provide a method for manufacturing a semiconductor light-emitting device, particularly a method for manufacturing a semiconductor light-emitting device that forms two different types of semiconductor epitaxial layers on a single substrate.

Means for Solving the Problems

[0008] The present invention provides a method for manufacturing a semiconductor light-emitting device. The manufacturing method includes the steps of providing a first substrate, providing a plurality of epitaxial units on the first substrate, forming a first adhesive layer between the first substrate and the plurality of epitaxial units, forming a second adhesive layer on the plurality of epitaxial units facing the first adhesive layer, removing the first adhesive layer and the first substrate, connecting the plurality of epitaxial units to a mounting substrate by a flip-chip method, and removing the second adhesive layer.

[0009] Further, the semiconductor light-emitting device includes a substrate, a semiconductor epitaxial stack located on the substrate, and a first electrode electrically connected to the semiconductor epitaxial stack. When viewed from a direction perpendicular to the substrate, the portion of the substrate not covered by the semiconductor epitaxial stack is substantially divided into a plurality of regions by the semiconductor epitaxial stack.

Brief Description of the Drawings

[0010]

Figure 1A

Figure 1B

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Figure 14D

Mode for Carrying Out the Invention

[0011] Hereinafter, examples of the present invention will be described with reference to the drawings. First, FIGS. 1A to 1H show a method for manufacturing a semiconductor light-emitting device according to an example of the present invention.

[0012] First, as shown in FIG. 1A, a semiconductor epitaxial stack 110 is formed on a growth substrate 10 in the order of an n-type semiconductor layer 112, an active layer 114, a p-type semiconductor layer 116, etc. by a conventional epitaxial growth technique. In this embodiment, the material of the growth substrate 10 is gallium arsenide (GaAs). Of course, in addition to the gallium arsenide (GaAs) substrate, the material of the growth substrate 10 can include germanium (Ge), indium phosphide (InP), sapphire (Al2O3), silicon carbide (SiC), silicon (Si), lithium aluminum oxide (LiAlO2), zinc oxide (ZnO), gallium nitride (GaN), aluminum nitride (AIN), and is not limited thereto. In this embodiment, the material of the n-type semiconductor layer 112 is, for example, aluminum gallium indium phosphide (AlGaInP), and is not limited thereto, and may be other than AlGaInP. The material of the p-type semiconductor layer 116 is, for example, gallium phosphide (GaP), and is not limited thereto, and may be other than GaP. Common materials used for the active layer 114 include aluminum gallium indium phosphide (AlGaInP) series, aluminum gallium indium nitride (AlGaInN) series, zinc oxide (ZnO) series, and its structure may be a single heterostructure (SH), a double heterostructure (DH), a double-side double heterostructure (DDH), or a multi-quantum well (MWQ). Specifically, the active layer 114 is a semiconductor of neutral, p-type or n-type polarity. When the applied current passes through the semiconductor epitaxial stack 110, the active layer 114 emits light.When the active layer 114 is based on aluminum gallium indium phosphide (AlGaInP), it emits amber (warm color system) light such as red, orange, and yellow. When it is based on aluminum gallium indium nitride (AlGaInN), it emits blue or green light. Also, based on different functions, the semiconductor epitaxial stack 110 may include other semiconductor layers.

[0013] Subsequently, as shown in FIG. 1B, by using a yellow light photolithography technique, patterned p-type electrodes 120a and 120b are formed in the p-type semiconductor layer 116 by using methods such as sputtering, thermal deposition, and electroplating. Here, the materials of the p-type electrodes 120a and 120b are preferably metals such as gold (Au), silver (Ag), copper (Cu), chromium (Cr), aluminum (Al), platinum (Pt), nickel (Ni), titanium (Ti), tin (Sn), and alloys or laminated combinations thereof. After forming the p-type electrodes 120a and 120b, a first mounting substrate 20 is prepared, and a first adhesive layer 135 is formed on the first mounting substrate 20 by spin coating or deposition, and the semiconductor epitaxial stack 110 is adhered to the first mounting substrate 20 by the first adhesive layer 135. Next, the growth substrate 10 is removed by wet etching or laser lift-off. The first mounting substrate 20 is not limited to a single material and may be a composite substrate combining different materials. For example, the first mounting substrate 20 may include two joined first substrates and a second substrate (not shown). In this embodiment, the material of the first mounting substrate 20 is sapphire (Al2O3). Also, the material of the first mounting substrate 20 may include lithium aluminum oxide (LiAlO2), zinc oxide (ZnO), gallium phosphide (GaP), glass, an organic polymer substrate, aluminum nitride (AlN), but is not limited thereto. After transferring the semiconductor epitaxial stack 110 to the first mounting substrate 20, a transfer structure as shown in FIG. 1C is formed. Here, as shown in FIG. 1C, in order to improve the light emission efficiency of the semiconductor light emitting device later constituted by this semiconductor epitaxial stack 110, if necessary, a part of the surface of the p-type semiconductor layer 116 may be roughened by dry etching or wet etching methods.

[0014] After transferring the semiconductor epitaxial stack 110 to the first mounting substrate 20, as shown in FIG. 1D, on the surface of the exposed n-type semiconductor layer 112, patterned n-type electrodes 130a and 130b are formed by using, for example, a yellow light photolithography technique, such as sputtering, thermal deposition, or electroplating. Here, the materials of the n-type electrodes 130a and 130b are preferably metals such as gold (Au), silver (Ag), copper (Cu), chromium (Cr), aluminum (Al), platinum (Pt), nickel (Ni), titanium (Ti), tin (Sn), and alloys or laminated combinations thereof.

[0015] As shown in FIG. 1E, for manufacturing different semiconductor light-emitting elements later, the subsequent processing steps on the surfaces of the n-type electrodes 130a and 130b may be the same or different. In this embodiment, at the position on the surface of the semiconductor epitaxial stack 110, a metal oxide transparent conductive layer 140 is formed by vapor deposition using techniques such as chemical vapor deposition (CVD) and physical vapor deposition (PVD). Subsequently, a reflective layer 150 is formed on a part of the surface of the metal oxide transparent conductive layer 140. Here, the material of the metal oxide transparent conductive layer 140 is, for example, materials such as indium tin oxide (ITO), indium zinc oxide (IZO), indium oxide (InO), tin oxide (SnO), fluorine-doped tin oxide (FTO), antimony tin oxide (ATO), cadmium tin oxide (CTO), aluminum zinc oxide (AZO), gallium-doped zinc oxide (GZO), or combinations thereof. The material of the reflective layer 150 is, for example, metals such as gold (Au), silver (Ag), copper (Cu), chromium (Cr), aluminum (Al), platinum (Pt), nickel (Ni), titanium (Ti), tin (Sn), beryllium (Be), and alloys or laminated combinations thereof. Or, it is a distributed Bragg reflector, which is a laminated combination selected from compounds such as aluminum oxide (Al2O3), silicon dioxide (SiO2), titanium dioxide (TiO2), and aluminum nitride (AIN). Next, the excess metal oxide transparent conductive layer 140 is removed so that the metal oxide transparent conductive layer 140 covers the n-type electrode 130a.

[0016] To obtain a complete electrical separation effect of the semiconductor stack, in this embodiment, as shown in the side view of FIG. 1F, before transferring the semiconductor epitaxial stack, a dry etching method is used to completely separate the first epitaxial unit 201 and the second epitaxial unit 202 in the part of the first mounting substrate 20 or more (excluding).

[0017] Specifically, for example, using dry etching methods such as Reactive Ion Etching (RIE), Inductively Coupled Plasma (ICP), and Plasma Etching (PE), a patterned photoresist layer (not shown) is used to divide the semiconductor epitaxial stack 110 into a first epitaxial unit and a second epitaxial unit, which are two different parts, in a direction perpendicular to the surface of the first mounting substrate 20 from the n-type semiconductor layer 112. In this embodiment, on the first mounting substrate 20, there are a first epitaxial unit 201 and a second epitaxial unit 202 having different surface areas and geometric shapes. The first epitaxial unit 201 has a p-type electrode 120a and an n-type electrode 130a as shown in FIG. 1G, and the second epitaxial unit 202 has a p-type electrode 120b and an n-type electrode 130b as shown in FIG. 1H.

[0018] Also, as shown in the top view of FIG. 7, the second epitaxial unit 202 substantially surrounds the first epitaxial unit 201. Here, as shown in FIG. 1F, in order to improve the light emission efficiency of the semiconductor light emitting device, if necessary, for example, by dry etching or wet etching methods, a part of the surface of the n-type semiconductor layer 112 of the first epitaxial unit 201 and / or the second epitaxial 202 may be roughened. Then, on the surface corresponding to the portion to be transferred for the second time on the first mounting substrate 20, that is, on the surface of the n-type semiconductor 112 corresponding to the position of the second epitaxial unit 202, a patterned second adhesive layer 230 is formed by spin coating or deposition using a photomask pattern (for example, a patterned photoresist, not shown).

[0019] Next, prepare the second mounting substrate 30. Using a method of heating and / or pressurization, the patterned second adhesive layer 230 is used to bond the second epitaxial unit 202 to the second mounting substrate 30. Subsequently, a laser is irradiated from the direction of the first mounting substrate 20 to dissolve the first adhesive layer 135 existing between the first mounting substrate 20 and the p-type semiconductor layer 116, and then the second epitaxial unit 202 portion is transferred to the second mounting substrate 30. After the second epitaxial unit 202 is bonded to the second mounting substrate 30, the first adhesive layer 135 remaining on the surface of the second epitaxial unit 202 on the second mounting substrate 30 is removed by a dry etching or wet etching method, and as shown in FIGS. 1G and 1H, the first mounting substrate 20 and the first epitaxial unit 201, and the second mounting substrate 30 and the second epitaxial unit 202 are formed (the top views thereof are as shown in FIGS. 3A and 4A respectively). In this embodiment, as shown in the top view of FIG. 4A, the second epitaxial units 202 are arranged in a U shape. Note that the first mounting substrate 20 and the first epitaxial unit 201 will later reform the semiconductor light-emitting element 200, and the second mounting substrate 30 and the second epitaxial unit 202 will later reform the semiconductor light-emitting element 300 (the top views thereof are as shown in FIGS. 3C and 4C respectively).

[0020] In this embodiment, as described above, the method of separating the second epitaxial unit 202 from the first mounting substrate 20 uses, for example, a method of dissolving the first adhesive layer 135 by laser irradiation. In addition, as the first adhesive layer 135, a material with a relatively low adhesive force to the first mounting substrate 20 may be selectively used (for example, silicon dioxide (SiO2)). Thereby, after the patterned second adhesive layer 230 is installed at the position of the surface portion of the second epitaxial unit 202 to be transferred for the second time, and the second epitaxial unit 202 is selectively bonded to the surface of the second mounting substrate 30, the second epitaxial unit 202 can be separated from the first mounting substrate 20 only by physical mechanical force.

[0021] Subsequently, FIGS. 2A to 2H show a method for manufacturing a semiconductor light-emitting element according to another embodiment of the present invention.

[0022] First, as shown in FIG. 2A, a semiconductor epitaxial stack 2110 is formed on a growth substrate 210 in the order of an n-type semiconductor layer 2112, an active layer 2114, a p-type semiconductor layer 2116, etc. by a conventional epitaxial growth technique. In this embodiment, the material of the growth substrate 210 is gallium arsenide (GaAs). In addition to the gallium arsenide (GaAs) substrate, the material of the growth substrate 210 may include, but is not limited to, germanium (Ge), indium phosphide (InP), sapphire (Al2O3), silicon carbide (SiC), silicon (Si), lithium aluminum oxide (LiAlO2), zinc oxide (ZnO), gallium nitride (GaN), aluminum nitride (AlN). In this embodiment, the material of the n-type semiconductor layer 2112 is, for example, aluminum gallium indium phosphide (AlGaInP), but is not limited thereto, and may be other than AlGaInP. The material of the p-type semiconductor layer 2116 is, for example, gallium phosphide (GaP), but is not limited thereto, and may be other than GaP. As materials commonly used for the active layer 2114, there are aluminum gallium indium phosphide (AlGaInP) series, aluminum gallium indium nitride (AlGaInN) series, zinc oxide (ZnO) series, and its structure may be a single heterostructure (SH), a double heterostructure (DH), a double-side double heterostructure (DDH), or a multi-quantum well (MWQ). Specifically, the active layer 114 is a semiconductor of neutral, p-type or n-type polarity. When the applied current passes through the semiconductor epitaxial stack 2110, the active layer 2114 emits light.When the active layer 2114 is based on aluminum gallium indium phosphide (AlGaInP), it emits amber-like light such as red, orange, and yellow. When it is based on aluminum gallium indium nitride (AlGaInN), it emits blue or green light. Also, based on different functions, the semiconductor epitaxial stack 2110 may include other semiconductor layers.

[0023] Subsequently, as shown in FIG. 2B, using a yellow light photolithography technique, patterned p-type electrodes 2120a and 2120b are formed in the p-type semiconductor layer 2116 by methods such as sputtering, thermal deposition, or electroplating. Here, the materials of the p-type electrodes 2120a and 2120b are preferably metals such as gold (Au), silver (Ag), copper (Cu), chromium (Cr), aluminum (Al), platinum (Pt), nickel (Ni), titanium (Ti), tin (Sn), and alloys or laminated combinations thereof.

[0024] After forming the p-type electrodes 2120a and 2120b, as shown in FIG. 2C, a first mounting substrate 220 is prepared, and a patterned sacrificial layer 2123 is formed on the surface of the first mounting substrate 220 by a yellow light photolithography technique. The arrangement position of the patterned sacrificial layer 2123 corresponds to the position of the second epitaxial unit to be transferred secondly later. Subsequently, a first adhesive layer 2135 is formed by a spin coating or deposition method. The semiconductor epitaxial stack 2110 is adhered to the first mounting substrate 220 by the first adhesive layer 2135. In this processing step, the first adhesive layer 2135 may be applied to the surface of the first mounting substrate 220 so as to cover the upper surface of the patterned sacrificial layer 2123, or the first adhesive layer 2135 may be applied to the surface of the p-type semiconductor layer 2116 so as to cover the upper surfaces of the p-type electrodes 2120a and 2120b. Thereafter, the semiconductor epitaxial stack 2110 and the first mounting substrate 220 are joined by a heating and / or pressurizing method. Finally, the growth substrate 210 is removed by a wet etching or laser lift-off method to form the semi-finished product structure shown in FIG. 2C.

[0025] Here, the first mounting substrate 220 is not limited to a single material and may be a composite substrate combining different materials. For example, the first mounting substrate 220 may include two joined first substrates and a second substrate (not shown). In this embodiment, the material of the first mounting substrate 220 is sapphire (Al2O3). Also, the material of the first mounting substrate 220 may include lithium aluminum oxide (LiAlO2), zinc oxide (ZnO), gallium phosphide (GaP), glass, an organic polymer substrate, aluminum nitride (AlN), but is not limited thereto. As shown in FIG. 2C, in order to improve the light emission efficiency of the semiconductor light emitting device constituted by this semiconductor epitaxial stack 2110 later, if necessary, a part of the surface of the p-type semiconductor layer 2116 may be roughened by a dry etching or wet etching method.

[0026] After transferring the semiconductor epitaxial stack 2110 to the first mounting substrate 220, as shown in FIG. 2D, on the surface of the exposed n-type semiconductor layer 2112, using the same yellow light photolithography technique, for example, by methods such as sputtering, thermal deposition, or electroplating, patterned n-type electrodes 2130a and 2130b are formed. Here, the materials of the n-type electrodes 2130a and 2130b are preferably metals such as gold (Au), silver (Ag), copper (Cu), chromium (Cr), aluminum (Al), platinum (Pt), nickel (Ni), titanium (Ti), tin (Sn), etc., and alloys or laminated combinations thereof.

[0027] As shown in FIG. 2E, for manufacturing different semiconductor light-emitting devices later, the subsequent processing steps on the surfaces of the n-type electrodes 2130a and 2130b may be the same or different. In this embodiment, at the position on the surface of the semiconductor epitaxial stack 2110, by techniques such as chemical vapor deposition (CVD) and physical vapor deposition (PVD), a metal oxide transparent conductive layer 2140 and / or a reflective layer 2150 are re-deposited and formed on a part of the surface of the n-type semiconductor layer 2112. Here, the material of the metal oxide transparent conductive layer 2140 is, for example, indium tin oxide (ITO), indium zinc oxide (IZO), indium oxide (InO), tin oxide (SnO), fluorine-doped tin oxide (FTO), antimony tin oxide (ATO), cadmium tin oxide (CTO), aluminum zinc oxide (AZO), gallium-doped zinc oxide (GZO), etc. materials or combinations thereof. The material of the reflective layer 2150 is, for example, metals such as gold (Au), silver (Ag), copper (Cu), chromium (Cr), aluminum (Al), platinum (Pt), nickel (Ni), titanium (Ti), tin (Sn), beryllium (Be), etc., and alloys or laminated combinations thereof.

[0028] In order to perform selective separation of the subsequent semiconductor layer, in this embodiment, before transferring the semiconductor epitaxial layer, first, by means of a dry etching method, in the portion above (other than) the first mounting substrate 220, the first epitaxial unit 2201 and the second epitaxial unit 2202 are completely separated. This separation includes the separation of the first adhesive layer 2135 and the patterned sacrificial layer 2123, and its side view is as shown in FIG. 2F.

[0029] Specifically, using a dry etching method such as Reactive Ion Etching (RIE), Inductively Coupled Plasma (ICP), or Plasma Etching (PE), the semiconductor epitaxial layer 2110 is divided into a first epitaxial unit 2201 and a second epitaxial unit 2202, which are two different parts, from the n-type semiconductor layer 2112 in a direction perpendicular to the surface of the first mounting substrate 20 by a patterned photoresist layer (not shown). In this embodiment, on the first mounting substrate 220, there are a first epitaxial unit 2201 and a second epitaxial unit 2202, which are two types of epitaxial units with different surface areas and geometric shapes. The first epitaxial unit 2201 has a p-type electrode 2120a and an n-type electrode 2130a, and the second epitaxial unit 2202 has a p-type electrode 2120b and an n-type electrode 2130b.

[0030] Here, as shown in FIG. 2F, in order to improve the light emission efficiency of the semiconductor light emitting element, if necessary, the surface of a part of the n-type semiconductor layer 2112 of the first epitaxial unit 2201 and / or the second epitaxial unit 2202 may be roughened by a dry etching or wet etching method. Subsequently, at the surface position of the n-type semiconductor 112 corresponding to the part to be transferred for the second time in the semiconductor epitaxial stack on the first mounting substrate 220, that is, the second epitaxial unit 2202 having the patterned sacrificial layer, a patterned second adhesive layer 2230 is provided by a photomask pattern (for example, a patterned photoresist, not shown). Of course, the patterned second adhesive layer 2230 may be patterned and formed on a part of the surface of the second mounting substrate 230 on which the second epitaxial unit 2202 is to be mounted later by a spin coating or deposition method.

[0031] In this embodiment, the material of the patterned second adhesive layer 2230 may be, for example, an organic material such as acrylic acid, unsaturated polyester resin, epoxy resin, oxetane, vinyl ether, nylon, polypropylene (PP), polybutylene terephthalate (PBT), polyphenylene oxide (PPO), polycarbonate (PC), acrylonitrile-butadiene-styrene (ABS), polyvinyl chloride (PVC). Also, it may be a metal such as titanium (Ti), gold (Au), beryllium (Be), tungsten (W), aluminum (Al), germanium (Ge), copper (Cu), or a combination thereof. Further, it may be a metal oxide such as indium tin oxide (ITO), cadmium tin oxide (CTO), antimony tin oxide, indium zinc oxide, aluminum zinc oxide, aluminum zinc oxide, zinc oxide (ZnO), silicon oxide (SiO x ). Also, it may be a nitride such as silicon nitride (SiN x ).

[0032] Subsequently, a second mounting substrate 230 is prepared, and in the same manner as above, using a method of heating and / or pressurizing, the patterned second adhesive layer 2230 is used to bond the second epitaxial unit 2202 onto the second mounting substrate 230. Subsequently, by methods such as dry etching, wet etching, mechanical force separation, UV light irradiation, heating, etc., the patterned second sacrificial layer 2123 is removed, or after reducing the adhesive force of the patterned sacrificial layer 2123, the second epitaxial unit 2202 is transferred onto the second mounting substrate 230.

[0033] Finally, by using the dry etching or wet etching method again, the first adhesive layer 2135 and / or the patterned sacrificial layer 2123 remaining on the surface of the second epitaxial unit 2202 on the second mounting substrate 230 are removed, and as shown in FIGS. 2G and 2H, the first mounting substrate 220 and the first epitaxial unit 2201, and the second mounting substrate 230 and the second epitaxial unit 2202 are formed (the top views thereof are as shown in FIGS. 3A and 4A respectively). Note that the first mounting substrate 220 and the first epitaxial unit 2201 will later reform the semiconductor light-emitting element 200, and the second mounting substrate 230 and the second epitaxial unit 2202 will later reform the semiconductor light-emitting element 300 (the top views thereof are as shown in FIGS. 3C and 4C respectively).

[0034] In this embodiment, the material of the patterned sacrificial layer 2123 may be, for example, a metal such as titanium (Ti), gold (Au), silver (Ag), tungsten (W), aluminum (Al), chromium (Cr), copper (Cu), platinum (Pt), or a combination thereof. It may also be a UV-decomposable colloid. It may also be a dielectric material such as silicon oxide (SiO x ) or silicon nitride (SiN x ). As described above, after removing the patterned sacrificial layer 2123 by methods such as dry etching, wet etching, UV light irradiation, etc., or reducing the adhesive force between the patterned sacrificial layer 2123 and the first mounting substrate 220 by heating, the second epitaxial unit 2202 and the first mounting substrate 220 are separated by a mechanical force separation method.

[0035] In the above embodiment, the semiconductor light-emitting element 200 is, for example, a flip chip type LED element, and its side view and top view are as shown in FIGS. 3B and 3C. As shown in FIG. 3B, in order to form two extended electrodes 130a' and 130a'' of the flip chip type LED element 200, dry etching methods such as reactive ion etching (RIE), inductively coupled plasma (ICP), and plasma etching (PE) are used. Using a photomask pattern (patterned photoresist layer, not shown), in a direction perpendicular to the surface of the first mounting substrate 20, from the n-type semiconductor layer 112 (2112), the semiconductor epitaxial stack 110 (2110) is etched to form a conductive hole 134 that penetrates to the p-type electrode 120a (2120a). Then, on the sidewall of the conductive hole 134, an insulating layer 132 is formed by vapor deposition using techniques such as chemical vapor deposition (CVD) and physical vapor deposition (PVD) to electrically insulate the semiconductor layer. Thereafter, a metal conductive structure is formed in the conductive hole 134 to form a p-type extended electrode 130a' that extends to the surface of the n-type semiconductor layer 112. By the same step, in combination with the n-type extended electrode 130a'' formed on the n-type electrode 130a (2130a), two extended electrodes of the flip chip type LED element 200 are configured. When the flip chip LED element 200 is electrically connected to an external electronic element (for example, a printed circuit board, etc.) in a flip chip manner, in order to obtain excellent reliability and stability in the connection of the entire structure, through structural design, it is preferable that the outer surface a of the n-type extended electrode 130a'' and the outer surface b of the p-type extended electrode 130a' located on the same side of the first epitaxial unit 201 are at the same horizontal height.

[0036] In the above embodiment, the semiconductor light-emitting element 300 formed by being transferred onto the second mounting substrate 30 is, for example, a high-voltage single-crystalline LED element, and its side view and top view are as shown in FIGS. 4B and 4C. To clearly show the manufacturing process of the high-voltage single-crystalline LED element 300, the following will further describe its manufacturing process and structure in sequence using FIGS. 4A, 5A, 5B, 4B, and 4C.

[0037] First, as shown in FIG. 4A, after the second epitaxial unit 202(2202) is transferred onto the second mounting substrate 30(230), a semiconductor epitaxial stack 110(2110) is formed on the growth substrate 10(210), and then a p-type electrode 120b(2120b) is formed directly on the p-type semiconductor layer 116(2116). After the first substrate transfer, a n-type electrode 130b(2130b) is formed directly on the n-type semiconductor layer 112(2112). Therefore, when the second epitaxial unit 202(2202) is transferred onto the second mounting substrate 30(230), the n-type electrode 130b(2130b) is hidden under the n-type semiconductor layer 112(2112) (shown by a dashed line here). At this time, the surface of the second epitaxial unit 202(2202) has the p-type electrode 120b(2120b), and the patterned second adhesive layer 230(2230) covers the surfaces of the second epitaxial unit 202(2202) and the p-type electrode 120b(2120b).

[0038] Subsequently, as shown in FIG. 5A, after removing the second epitaxial unit 202 (2202) and the patterned second adhesive layer 230 (2230) on the p - electrode surface, the second epitaxial unit 202 (2202) is divided into a plurality of third epitaxial units 202' again using a dry etching method such as Reactive Ion Etching (RIE), Inductively Coupled Plasma (ICP), or Plasma Etching (PE). At this time, the n - type electrode 130b' (shown by diagonal lines here) under some of the third epitaxial units 202' is exposed. Subsequently, by means of a patterning technique, an insulating layer 232 is vapor - deposited and formed on a part of the surface of the third epitaxial unit 202' and the side walls between adjacent third epitaxial units 202' using techniques such as Chemical Vapor Deposition (CVD) and Physical Vapor Deposition (PVD), so as to electrically insulate the other electrical semiconductor layers of the third epitaxial unit 202'. In this processing step, the side - surface structure between two adjacent third epitaxial units 202' is as shown in FIG. 5B. In this embodiment, the material of the insulating layer 232 is silicon dioxide (SiO2), but in addition to silicon dioxide, the material of the insulating layer 232 may include silicon nitride (SiN x ), aluminum oxide (Al2O3), aluminum nitride (AIN x ) or a combination thereof.

[0039] Subsequently, using a yellow light photolithography technique, a metal conductive connection structure 125 is formed between adjacent third epitaxial units 202', connecting the n-type electrode 130b' of one third epitaxial unit 202' to the p-type electrode 120b of an adjacent third epitaxial unit 202' to form an electrically series-connected structure, thereby constituting the high voltage single-crystalline LED element 300 shown in FIGS. 4B and 4C. In this device structure, the p-type electrode 120b (2120b) and the n-type electrode 130b' are respectively located on opposite sides of the third epitaxial unit 202'. The p-type electrodes 120b (2120b) and the n-type electrodes 130b' of the two third epitaxial units 202' at the ends of the device are respectively externally connected to form a p-type electrode pad 102b' and an n-type electrode pad 120b''. Note that the p-type electrode 120b (2120b), the n-type electrode 130b', the p-type electrode pad 120b' and the n-type electrode pad 120b'' may be formed together in the same step as the conductive connection structure 125. As shown in FIG. 4C, in order to improve the light emission efficiency of the LED element 300, in this embodiment, the p-type electrode pad 120b' and the n-type electrode pad 120b'' are respectively formed on portions of the surface of the second mounting substrate 30 (230) other than the third epitaxial unit 202', and do not overlap with the surface of the third epitaxial unit 202'.

[0040] Those skilled in the art should understand that, in addition to the electrically series-connected structure, it is also possible to form an electrically parallel structure between adjacent third epitaxial units 202'. As a method of electrical connection between epitaxial units, in addition to the conductive connection structure 125 formed on the third epitaxial unit 202', after previously patterning and forming a conductive connection structure on the surface of the second mounting substrate 30 (230), each third epitaxial unit 202' can be adhered to the second mounting substrate 30 (230) by a flip-chip method and electrically connected to the patterned conductive connection structure on the surface of the second mounting substrate, thereby forming an LED element constituted by an electrically series or parallel structure between a plurality of third epitaxial units 202'.

[0041] In another embodiment, it is also possible to form the semiconductor light-emitting element 200 into a semiconductor light-emitting element 400 including a package form by subsequent reprocessing. The side view and top view after its completion are as shown in FIGS. 6C and 6D. To clearly show the semiconductor light-emitting element 400 in package form, the following will sequentially describe its manufacturing steps and structure based on FIGS. 6A to 6C respectively.

[0042] In this embodiment, taking the semiconductor light-emitting element 200 as an example, first, as shown in FIG. 6A, a second transparent structure 40 is formed to surround the second semiconductor light-emitting element 200 by a method of spin coating or deposition, and the sidewalls constituting the epitaxial unit of the semiconductor light-emitting element 200 are also surrounded. Note that the first transparent structure 40 is transparent to the light emitted by the second semiconductor light-emitting element 200, packages the second semiconductor light-emitting element 200, and enhances its mechanical strength. The material of the first transparent structure 40 may be, for example, epoxy resin, polyimide, benzocyclobutene, perfluorocyclobutane, SU8 photoresist, acrylic resin, polymethylmethacrylate, polyethylene terephthalate, polycarbonate, polyetherimide, fluorocarbon polymer, glass, aluminum oxide (Al2O3), SINR, spin-on glass (SOG), Teflon (registered trademark), or a combination thereof.

[0043] Subsequently, as shown in FIG. 6B, the first transparent structure 40 is locally removed to expose portions of the p-type extended electrode 130a' and the n-type extended electrode 130a''. Next, an insulating scattering layer 410 is formed by a method such as spin coating, deposition, stencil printing, or screen printing so as to cover the surface of the first transparent structure 40, a part of the surfaces and the sides of the p-type extended electrode 130a' and the n-type extended electrode 130a''. The insulating scattering layer 410 can simultaneously provide functions of light scattering, reflection, and electrical insulation, reduce the use of scattering materials, reflective materials, and insulating materials, avoid material loss caused by material characteristics such as differences in thermal expansion coefficient or mechanical strength, improve the yield rate, and reduce costs. In addition, it can prevent water and air from entering the second semiconductor light-emitting element 200 and improve the reliability. As shown in FIG. 6C, the material of the insulating scattering layer 410 may be epoxy resin, silicon oxide (SiO x ), aluminum oxide (Al2O3), titanium dioxide (TiO2), silicone, resin, or a combination thereof.

[0044] Subsequently, using a yellow light photolithography technique, the insulating scattering layer 410 corresponding to the positions of the p-type extended electrode 130' and the n-type extended electrode 130'' is locally removed to form openings 411 and 412 corresponding to the p-type extended electrode 130' and the n-type extended electrode 130''. It should be noted here that in order to enhance the insulation effect of the semiconductor light-emitting element 200, as shown in FIG. 6D, as an embodiment of the insulating scattering layer 410, it is preferable to cover the side walls and a part of the surfaces of the p-type extended electrode 130' and the n-type extended electrode 130''.

[0045] Finally, by means of chemical coating, electrical coating or photomask partial sputtering, an external p-type electrode pad 1310 and an n-type electrode pad 1320 are formed on the transparent structure 40 and the insulating diffusion layer 410 at the openings 411 and 412 respectively, and a semiconductor light-emitting device 400 in a package form is completed as shown in FIG. 6E. Since the outline of the semiconductor epitaxial stack has a package structure, the whole device has relatively excellent heat resistance, moisture resistance and oxidation resistance. It is directly connected to the circuit board of the light-emitting device by means of wire bonding or flip chip, and then a light-emitting device, such as a light bulb, a backlight or a vehicle lighting device, etc., is constituted.

[0046] FIG. 8 is a top view of the semiconductor light-emitting device 400. When viewed from a direction perpendicular to the first mounting substrate 20 (the direction of arrow D in FIG. 6E), the semiconductor light-emitting device 200 constituted by the first epitaxial unit 201 is surrounded by the transparent structure 40, the upper part of the transparent structure 40 is covered by an insulating diffusion layer (not shown), and the openings 411 and 412 formed by locally removing the insulating diffusion layer 410 are located on the first epitaxial unit 201 respectively. Note that p-type electrode pads 1310 and n-type electrode pads 1320 which are electrically connected to the first epitaxial unit 201 are respectively overlapped on the openings 411 and 412. As can be seen from this figure, the ranges of the p-type electrode pad 1310 and the n-type electrode pad 1320 exceed the region of the first epitaxial unit 201. That is, when viewed from a direction perpendicular to the first mounting substrate 20, there are parts of the p-type electrode pad 1310 and the n-type electrode pad 1320 that do not overlap with the first epitaxial unit 201 respectively.

[0047] With the above design, the area of the metal electrode pad can be increased. When the semiconductor light-emitting device 400 is electrically connected to an external electronic element substrate (for example, a printed circuit board), better reliability and stability can be obtained in the connection of the whole structure. By the structural design, it is preferable that the outer surfaces of the n-type electrode pad 1320 and the p-type electrode pad 1310 located on the same side of the first semiconductor epitaxial stack 201 are at the same horizontal height.

[0048] In addition, the n-type electrode pad 1320 and the p-type electrode pad 1310 receive an external voltage, and may be made of, but is not limited to, copper (Cu), tin (Sn), gold (Au), nickel (Ni), titanium (Ti), lead (Pb), copper-tin (Cu-Sn), copper-zinc (Cu-Zn), copper-cadmium (Cu-Cd), tin-lead-antimony (Sn-Pb-Sb), tin-lead-zinc (Sn-Pb-Zn), nickel-cobalt (Ni-Co), gold alloy (Aualloy), gold-copper-nickel-gold (Au-Cu-Ni-Au), or a combination thereof. The n-type electrode pad 1320 and the p-type electrode pad 1310 may also include multiple auxiliary layers (not shown), and the metal pad structure having a relatively large area has a reflectance of 70% or more for the light from the LED element 400, which can effectively improve the light emitting efficiency of the LED element 400.

[0049] According to different needs of the device, the epitaxial elements may have different geometric shapes when viewed from the vertical direction of the substrate. In this embodiment, as shown in Fig. 9, the semiconductor light emitting device may be formed, for example, in a square or cross shape, by cutting again later. As shown in Fig. 10A and Fig. 10B, the semiconductor epitaxial stack 5110 on the growth substrate 510 is divided into a first epitaxial unit 501 and a second epitaxial unit 502 according to the shape, and transferred to a first mounting substrate 520 and a second mounting substrate 530, respectively, by the above-mentioned substrate transfer method.

[0050] It should be noted that since the materials of the first mounting substrate 520 and the second mounting substrate 530 may be insulating materials such as sapphire (Al2O3), a conductive layer, for example, a metal oxide conductive layer (not shown) that is transparent to the emission wavelength of the semiconductor epitaxial stack, may be formed entirely or in a patterned and partial manner on the surface of the mounting substrate (between the epitaxial unit) so as to electrically connect the semiconductor layer of the epitaxial unit that contacts the mounting substrate side and the semiconductor layer exposed on the upper side of the epitaxial unit. As a method for forming the transparent metal oxide conductive layer, there are techniques such as chemical vapor deposition (CVD) and physical vapor deposition (PVD), and the material of the transparent metal oxide conductive layer is, for example, indium tin oxide (ITO), indium zinc oxide (IZO), indium oxide (InO), tin oxide (SnO), fluorine-doped tin oxide (FTO), antimony tin oxide (ATO), cadmium tin oxide (CTO), aluminum zinc oxide (AZO), gallium-added zinc oxide (GZO), or a combination of such materials. As in the above-described embodiment of the present invention, the transparent metal oxide conductive layer may be manufactured in a batch in the substrate transfer process as a material for the adhesive layer.

[0051] Next, based on FIGS. 11A to 11E, a method for manufacturing a semiconductor light-emitting device according to another embodiment using a transparent metal oxide conductive layer as an adhesive layer material of the present invention will be described. First, as shown in FIG. 11A, the semiconductor epitaxial stack is transferred from the growth substrate 510 to the first mounting substrate 520 having the first adhesive layer 5130 by the above-described embodiment or a well-known method, and the semiconductor epitaxial stack is patterned and divided into the first epitaxial unit 501 and the second epitaxial unit 502. Note that the material of the first adhesive layer 5130 may be an organic material such as acrylic acid, unsaturated polyester resin, epoxy resin, oxetane, vinyl ether, nylon, polypropylene (PP), polybutylene terephthalate (PBT), polyphenylene oxide (PPO), polycarbonate (PC), acrylonitrile-butadiene-styrene (ABS), polyvinyl chloride (PVC). Further, for example, it may be a metal such as titanium (Ti), gold (Au), beryllium (Be), tungsten (W), aluminum (Al), germanium (Ge), copper (Cu), or a combination thereof. Further, it may be a metal oxide such as indium tin oxide (ITO), cadmium tin oxide (CTO), antimony tin oxide, indium zinc oxide, aluminum zinc oxide, aluminum zinc oxide, zinc oxide (ZnO), silicon oxide (SiO x ). Further, it may be a nitride such as silicon nitride (SiN x ).

[0052] As shown in FIGS. 11A and 11B, the semiconductor epitaxial stack is composed of an n-type semiconductor layer 5112, an active layer 5114, and a p-type semiconductor layer 5116. Similar to the above manufacturing method, the semiconductor epitaxial stack is patterned and divided into one first epitaxial unit 501 and a plurality of second epitaxial units 502. Subsequently, a transparent metal oxide conductive layer is coated on the surface of the second epitaxial unit 502 and the surface of the second mounting substrate 530 to form a patterned second adhesive layer 5230, and they are adhered by heating or pressurizing. Note that the patterned second adhesive layer 5230 may be formed entirely or partially in a patterned manner on the surface of the second mounting substrate 530. Subsequently, as shown in FIGS. 11C and 11D, laser or UV light is irradiated from the direction of the first mounting substrate 520 to dissolve the first adhesive layer 5130 existing between the first mounting substrate 520 and the epitaxial unit 502, and then a portion of the second epitaxial unit 502 is transferred to the second mounting substrate 530. After the second epitaxial unit 502 is adhered to the second mounting substrate 530, the first adhesive layer 5130 remaining on the surface of the second epitaxial unit 502 on the second mounting substrate 530 is removed by dry etching or wet etching, and as shown in FIGS. 10A and 10B, the first mounting substrate 520 and the first epitaxial unit 501, and the second mounting substrate 530 and the second epitaxial unit 502 are formed.

[0053] In this embodiment, as described above, as a method for separating the second epitaxial unit 502 from the first mounting substrate 520, for example, a method of dissolving the first adhesive layer 5130 by laser irradiation is used. In addition, a material having a relatively low adhesive force with the first mounting substrate 520 (for example, silicon dioxide (SiO2)) may be selectively used as the first adhesive layer 5130. Subsequently, a patterned second adhesive layer 5230 is installed at a partial position on the surface of the second epitaxial unit 502 to be transferred twice, and after the second epitaxial unit 502 is selectively adhered to the surface of the second mounting substrate 530, the second epitaxial unit 502 can be separated from the first mounting substrate 520 only by physical mechanical force.

[0054] After separating the second epitaxial unit 502 from the first mounting substrate 520, the second mounting substrate 530 will have a plurality of second epitaxial units 502. Subsequently, according to the requirements of the semiconductor light-emitting device to be manufactured later, the second mounting substrate 530 is patterned and divided into a plurality of second mounting substrate units (not shown). It is possible to mount one second epitaxial unit 502 or a plurality of second epitaxial units 502 on each mounting substrate unit.

[0055] Taking FIG. 11E as an example, one second epitaxial unit 502 is mounted on a single second mounting substrate unit 530' after division. Since the transparent metal oxide conductive layer is used as the patterned second adhesive layer 5230, the patterned second adhesive layer 5230 can be directly electrically connected to the n-type semiconductor layer 5112 and extended onto the surface of the second mounting substrate unit 530' outside the second epitaxial unit 502. Subsequently, on the surface of the patterned second adhesive layer 5230 extending outside the second epitaxial unit 502 and the surface of the p-type semiconductor layer 5116, a patterned n-type electrode 5120a and a p-type electrode 5120b are respectively formed by methods such as yellow light photolithography techniques, for example, sputtering, thermal deposition, or electroplating. Since the n-type electrode 5120a formed in this way is not located on the surface of the second epitaxial unit 502, the light-shielding effect of the metal that does not allow light to pass through is reduced, and a better light extraction amount of the device can be realized.

[0056] If necessary, the second epitaxial unit 502 in FIG. 10B is patterned and removed. After manufacturing different semiconductor light-emitting devices, the first epitaxial unit 501 remaining on the first mounting substrate 520 is cut and separated from the first mounting substrate 520 again, and different semiconductor light-emitting devices can be manufactured by different subsequent processes.

[0057] Referring to FIG. 13, as indicated by the dashed lines in the figure, the remaining first epitaxial unit 501 is divided by, for example, the method of this embodiment, and a plurality of semiconductor light-emitting elements having a cross-shaped epitaxial unit 501' are manufactured. As shown in FIGS. 14A to 14D, all the semiconductor epitaxial layers on the substrate can be effectively utilized by this manufacturing process.

[0058] Hereinafter, the structures of the top view and the perspective view of an embodiment different from the above embodiment will be described. As shown in FIGS. 14A and 14B, the top view shows a semiconductor light-emitting element 500 composed of a cross-shaped epitaxial unit 501', and FIG. 14B is a perspective view thereof. As in the above embodiment, as shown in FIG. 14A, in this embodiment, a transparent metal oxide conductive layer 5280 is formed on the entire surface of the second mounting substrate unit 530', and on the surface of the transparent metal oxide conductive layer 5280 extending outside the second epitaxial unit 502 and on the surface of the p-type semiconductor layer 5116, patterned n-type electrodes 5120a and p-type electrodes 5120b that are electrically connected to the n-type semiconductor layer 5112 and the p-type semiconductor layer 5116, respectively, are provided.

[0059] Next, FIGS. 14C and 14D show a second embodiment of the example of the present invention, that is, a top view and a perspective view of a semiconductor light-emitting element 600 constituted by a cross-shaped epitaxial unit 501'. In this embodiment, a partially patterned transparent metal oxide conductive layer 5280 is provided as an adhesive layer on the surface of the second mounting substrate unit 530'. Note that the second mounting substrate 530 is an insulating substrate, for example, sapphire (Al2O3). Therefore, after the p-type electrode 5120b is provided on the surface of the second mounting substrate unit 530' where the transparent metal oxide conductive layer 5280 is not provided, it is electrically connected to the p-type semiconductor layer 5116 through a p-type extended electrode 5120b' extending from the p-type electrode 5120b. Similarly, the n-type electrode 5120a is also disposed on the surface of the patterned second adhesive layer 5230 extending outside the second epitaxial unit 502 and is electrically connected to the n-type semiconductor layer 5112 through the patterned second adhesive layer 5230. Since both the n-type electrode 5120a and the p-type electrode 5120b formed in this way are not located on the surface of the second epitaxial unit 502, the light-shielding effect of the metal that does not allow light to pass is further reduced, and a better light extraction amount of the element can be realized.

[0060] As seen from the top views of the above two types of embodiments (FIGS. 14A and 14C), in the semiconductor light-emitting elements 500 and 600, the second epitaxial unit is a single cross-shaped epitaxial unit 501' (symmetrical in shape and having two different symmetry planes A' and B' perpendicular to the substrate), and the ends of the cross-shaped epitaxial unit 501' are in positions close to the sides of the second mounting substrate unit 530'. Therefore, the portion of the second mounting substrate unit 530' not covered by the cross-shaped epitaxial unit 501' is substantially divided into four regions by the cross-shaped epitaxial unit 501'. Of course, those skilled in the art can understand that the shape of the cross-shaped epitaxial unit 501' can be other shapes, such as an L shape or an irregular polygon, and the second mounting substrate unit 530' is divided into different numbers of regions depending on different shapes.

[0061] In this embodiment, the second mounting substrate 530 is an insulating substrate, for example, sapphire (Al2O3). In addition, depending on the requirements of the device, the material of the second mounting substrate 530 can also include, but is not limited to, lithium aluminum oxide (LiAlO2), zinc oxide (ZnO), gallium nitride (GaP), glass, organic polymer board materials, aluminum nitride (AlN). Moreover, in addition to being an insulating substrate, it may also be a conductive substrate. In addition to being a transparent substrate, it may also be a reflective substrate. Furthermore, in order to improve the heat dissipation efficiency of the device, the substrate is a heat dissipation substrate with high heat dissipation performance, and the thermal conductivity coefficient of its material is at least 24 W / m·K. For example, it may be copper (Cu), tungsten (Wu), aluminum nitride (AlN), metal matrix composite (MMC), ceramic matrix composite (CMC), silicon carbide (SiC), aluminum (Al), silicon (Si), diamond (Diamond) or a combination thereof.

[0062] Furthermore, taking the formed semiconductor light-emitting elements 200 and 300 as an example, the lower transparent mounting substrates (20, 30) have a relatively large surface area with respect to the surface area of the active layer 114 of the semiconductor epitaxial layer 110. When light is incident on the transparent mounting substrates (20, 30) with a relatively low refractive index, since the surface areas of the transparent mounting substrates (20, 30) are relatively large, a relatively high proportion of the light can be extracted from the transparent mounting substrates (20, 30). In the example of a conventional flip-chip type LED element, as shown in FIGS. 12A and 12B, the conventional flip-chip type LED element has an active layer 114 with the same size as the surface area of the substrate 50, and the flip-chip type LED element 200 of the embodiment of the present invention (as shown in FIG. 3C) has a surface area more than twice as large as that of the active layer 114 in comparison. After the LED elements are attached to the corresponding circuit structures on the surfaces of the sub-carriers 50' and 20' by solders 560 and 260, light-emitting devices 5000 and 2000 are formed respectively. At this time, after more light L is emitted from the active layer, it can be extracted by the large transparent mounting substrate 200 and will not be reabsorbed and lost in the active layer 114. That is, the light-emitting device 2000 has better luminous efficiency than the light-emitting device 5000. Similarly, the same effect can be obtained by applying the structure of the large transparent mounting substrate 20 to any of the high-voltage single-crystalline LED element 300, the packaged semiconductor light-emitting element 400, and the single-crystalline LED elements 500 and 600 composed of a single epitaxial unit 502.

[0063] In different embodiments, the semiconductor epitaxial layer on a single mounting substrate is not limited to one. For the sake of simplifying the manufacturing steps, after forming a semiconductor epitaxial layer on a relatively large first mounting substrate 20 (for example, one wafer), by means of the yellow light photolithography technology and the substrate transfer technology, a plurality of the same first epitaxial units 201 and second epitaxial units 202 as shown in FIG. 7 may be repeatedly formed. Next, when a plurality of second epitaxial units 202 formed on the first mounting substrate 20 are collectively transferred to another large second mounting substrate 30 (for example, another wafer), a plurality of first epitaxial units 201 will be left on the first mounting substrate 20. Subsequently, in the first mounting substrate 20 and the second mounting substrate 30, for example, the above-mentioned element process is performed, and by dividing the first mounting substrate 20 with the surface area of the substrate shown in FIG. 3C as the size of one element, a plurality of first semiconductor light-emitting elements 200 including the first epitaxial unit 201 can be obtained. Similarly, by dividing the second mounting substrate 30 with the surface area of the substrate shown in FIG. 4C as the size of one element, a plurality of second semiconductor light-emitting elements 300 including the second epitaxial unit 202' can be obtained.

[0064] The semiconductor light-emitting elements 200 and 300 formed after division are respectively composed of a set of single semiconductor epitaxial layers 110 originally formed on a single substrate. Therefore, the formed semiconductor light-emitting elements 200 and 300 have substantially the same element dimensions, that is, the surface areas of the element substrates are substantially the same, as shown in FIGS. 3C and 4C.

[0065] The purpose of each embodiment illustrated in the present invention is only for the description of the present invention and does not limit the scope of the present invention. All obvious modifications or changes made to the present invention belong to the spirit and scope of the present invention.

Explanation of Reference Numerals

[0066] 50 Substrate 10, 210, 510 Growth Substrate 112, 2112, 5112 n-Type Semiconductor Layer 114, 2114, 5114 Active Layer 116, 2116, 5116 p-type semiconductor layers 110, 2110, 5110 semiconductor epitaxial layers 120a, 120b, 2120a, 2120b, 5120b p-type electrodes 20, 220, 520, 60 First mounting substrate 135, 2135, 5135 First adhesive layer 130a, 130b, 2130a, 2130b, 130b’, 5120a n-type electrodes 140, 2140 Metal oxide transparent conductive layer 150, 2150 Reflective layer 201, 2201, 501 First epitaxial unit 202, 2202, 502, 501’ Second epitaxial unit 230, 2230, 5230 Second adhesive layer 5280 Transparent metal oxide conductive layer 30, 530 Second mounting substrate 200, 300, 400, 500, 600 Semiconductor light-emitting elements 2123 Patterned sacrificial layer 130a’, 5120b’ p-type extended electrodes 130a’’ n-type extended electrode 134 Conductive hole 132, 232 Insulating layer 202’ Third epitaxial unit 125 Metal conductive connection structure 120b’, 1310 p-type electrode pads 120b’’, 1320 n-type electrode pads 40 First transparent structure 410 Insulating scattering layer 411, 412 Openings 530’ Second mounting substrate unit 501’ Cross-shaped epitaxial unit 260, 560 Solder 50’, 20’ Sub-carriers 5000, 2000 Light-emitting devices A’, B’ Symmetry planes D Direction

Claims

1. A method for manufacturing a semiconductor light-emitting device, comprising: providing a first substrate; providing a semiconductor epitaxial layer; providing a first adhesive layer positioned between the semiconductor epitaxial layer and the first substrate; dividing the semiconductor epitaxial layer into a plurality of epitaxial units, and forming a plurality of electrodes on the plurality of epitaxial units; forming a second adhesive layer that completely covers and directly connects at least one of the plurality of electrodes; providing a second substrate; and transferring at least one of the plurality of epitaxial units to the second substrate, wherein the second adhesive layer includes ITO, IZO, InO, SnO, FTO, ATO, CTO, AZO, GZO, or a combination thereof, and the plurality of epitaxial units include a first epitaxial unit and a second epitaxial unit having different areas and geometric shapes. A method for manufacturing a semiconductor light-emitting device.

2. The method for manufacturing a semiconductor light-emitting device according to claim 1, wherein the plurality of electrodes are disposed between the second adhesive layer and the plurality of epitaxial units.

3. The method for manufacturing a semiconductor light-emitting device according to claim 2, wherein the second adhesive layer is directly connected to at least one of the plurality of epitaxial units.

4. The method for manufacturing a semiconductor light-emitting device according to claim 2, wherein the plurality of electrodes include a metal material, and the metal material includes Au, Ag, Cu, Al, Pt, Ni, Ti, or Sn.

5. The method for manufacturing a semiconductor light-emitting device according to claim 1, wherein the material of the first adhesive layer includes an organic material, silicon oxide, or silicon nitride.

6. The second adhesive layer includes a first region and a second region, and the first region and the second region are completely separated so as to correspond to the first epitaxial unit and the second epitaxial unit, respectively. The method for manufacturing a semiconductor light-emitting device according to claim 1.

7. The method for manufacturing a semiconductor light-emitting device according to claim 6, wherein a transparent metal oxide conductive layer and / or a reflective layer is formed on at least one surface of the plurality of epitaxial units.

8. Each of the epitaxial units a first conductivity type semiconductor layer located on the first substrate, a second conductivity type semiconductor layer located on the first conductivity type semiconductor layer, and an active layer located between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer. The method for manufacturing a semiconductor light-emitting device according to claim 1.

9. The method for manufacturing a semiconductor light-emitting device according to claim 8, wherein the second conductivity type semiconductor layer has a roughened surface.

10. The method for manufacturing a semiconductor light-emitting device according to claim 8 or 9, wherein the first conductivity type semiconductor layer has a roughened surface.

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