Optical semiconductor device and method for manufacturing the same

JP7695975B2Active Publication Date: 2025-06-19DOWA ELECTRONICS MATERIALS CO LTD
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Patent Information

Application Number
JP2023131594
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Filing Date
2023-08-10
Publication Date
2025-06-19
Estimated Expiration
2043-08-10

AI Technical Summary

Technical Problem

Conventional optical semiconductor devices face challenges in achieving long-wavelength light emission beyond 3000 nm and in preventing dopant diffusion between active layers, which can lead to decreased reliability and increased leakage current.

Method used

The optical semiconductor device incorporates a first and second active layer containing Sb, with a tunnel junction layer composed of a p-type InAs layer and an n-type InAs layer, achieving a dopant concentration of 1.0×10^18 atoms/cm^3 or more but less than 1.0×10^19 atoms/cm^3, thereby minimizing dopant diffusion and enhancing device reliability.

Benefits of technology

This configuration enables the optical semiconductor device to achieve high light-emitting output and forward voltage, while also reducing leakage current, thus providing improved characteristics for both light-emitting and light-receiving applications.

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Abstract

To improve the characteristics of an optical semiconductor element.SOLUTION: An optical semiconductor element according to the present invention includes a first active layer having an emission and reception wavelength of a first wavelength, a tunnel junction layer on the first active layer, and a second active layer on the tunnel junction layer having an emission and reception wavelength of a second wavelength, and the first and second active layers include Sb, and the tunnel junction layer has a p-type InAs layer and an n-type InAs layer.SELECTED DRAWING: Figure 1
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