Electronic device

Abstract

Provided is an electronic device with a high level of security. This electronic device comprises a control unit, a storage unit, and a display unit. The display unit has a function to display a first icon and a function to acquire first fingerprint information in a region where the first icon is displayed. The storage unit has a function to retain second fingerprint information. The control unit has a function to compare the first fingerprint information and the second fingerprint information, a function to execute first processing associated with the first icon if the first fingerprint information and the second fingerprint information match, and a function to execute second processing if the first fingerprint information and the second fingerprint information do not match.

Description

Technical Field

[0001] One aspect of the present invention relates to an electronic device. One aspect of the present invention relates to an authentication method. One aspect of the present invention relates to a display device. One aspect of the present invention relates to a program.

[0002] Note that one aspect of the present invention is not limited to the above technical fields. Examples of the technical fields of one aspect of the present invention include semiconductor devices, display devices, light-emitting devices, power storage devices, storage devices, electronic devices, lighting devices, input devices (e.g., touch sensors, etc.), input / output devices (e.g., touch panels, etc.), their driving methods, or their manufacturing methods.

Background Art

[0003] In recent years, information terminal devices such as mobile phones such as smartphones, tablet-type information terminals, and notebook PCs (personal computers) have become widely popular. Such information terminal devices often contain personal information and the like, and various authentication technologies have been developed to prevent unauthorized use.

[0004] For example, Patent Document 1 discloses an electronic device provided with a fingerprint sensor in a push button switch section.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] One aspect of the present invention has an object of providing an electronic device with a high security level. Or, one object of the present invention is to provide an electronic device capable of suitably suppressing unauthorized use. Or, one object of the present invention is to provide a novel electronic device.

[0007] Note that the description of these problems does not prevent the existence of other problems. One aspect of the present invention does not necessarily need to solve all of these problems. It is possible to extract other problems from the description of the specification, drawings, and claims.

Means for Solving the Problems

[0008] One aspect of the present invention is a program for causing an electronic device having a display unit having a function of acquiring fingerprint information and a function of displaying a first icon, a control unit, and a storage unit to perform, in a display area of the first icon of the display unit, a step of acquiring first fingerprint information, a step of collating, by the control unit, the first fingerprint information with second fingerprint information stored in the storage unit, a step of, when the first fingerprint information and the second fingerprint information match, executing, by the control unit, a first process associated with the first icon, and a step of, when the first fingerprint information and the second fingerprint information do not match, executing, by the control unit, a second process.

[0009] The display unit preferably has a function of detecting a touch operation. The above program is preferably a program for causing the above electronic device to further perform a step of detecting a touch operation in the display area of the first icon.

[0010] The display unit preferably has a function of displaying a second icon. The above program further includes a step of acquiring third fingerprint information in the display area of the second icon of the display unit, a step of collating, by the control unit, the third fingerprint information with fourth fingerprint information possessed by the storage unit, a step of, when the third fingerprint information and the fourth fingerprint information match, executing, by the control unit, a third process associated with the second icon, and a step of, when the third fingerprint information and the fourth fingerprint information do not match, executing, by the control unit, a fourth process, and may be a program for causing the above electronic device to execute the steps. Alternatively, the above program preferably further includes a step of detecting a touch operation in the display area of the second icon and a step of executing, by the control unit, a third process associated with the second icon, and is a program for causing the above electronic device to execute the steps.

[0011] One aspect of the present invention is a program for causing an electronic device having a display unit having a function of acquiring fingerprint information and a function of displaying a first icon, a control unit, and a storage unit to execute, in the display area of the first icon of the display unit, a step of acquiring a plurality of first fingerprint information, a step of collating, by the control unit, each of the plurality of first fingerprint information with a plurality of second fingerprint information possessed by the storage unit, a step of, when each of the first fingerprint information matches any of the plurality of second fingerprint information, executing, by the control unit, a first process associated with the first icon, and a step of, when at least one of the first fingerprint information does not match any of the plurality of second fingerprint information, executing, by the control unit, a second process.

[0012] The display unit preferably has a function of detecting a touch operation. The above program preferably further includes a step of detecting a touch operation in the display area of the first icon and is a program for causing the above electronic device to execute the step.

[0013] One aspect of the present invention is a non-transitory computer-readable recording medium on which any of the above programs is recorded.

[0014] One aspect of the present invention is an electronic device having a control unit, a storage unit, and a display unit. The display unit has a function of displaying a first icon and a function of acquiring first fingerprint information in a display area of the first icon. The storage unit has a function of holding second fingerprint information. The control unit has a function of collating the first fingerprint information and the second fingerprint information, and a function of executing a first process associated with the first icon when the first fingerprint information and the second fingerprint information match, and a function of executing a second process when the first fingerprint information and the second fingerprint information do not match.

[0015] In the above electronic device, it is preferable that the display unit further has a function of detecting a touch operation in the display area of the first icon.

[0016] In the above electronic device, it is preferable that the display unit further has a function of displaying a second icon and a function of acquiring third fingerprint information in a display area of the second icon, the storage unit has a function of holding fourth fingerprint information, and the control unit has a function of collating the third fingerprint information and the fourth fingerprint information, and a function of executing a third process associated with the second icon when the third fingerprint information and the fourth fingerprint information match, and a function of executing a fourth process when the third fingerprint information and the fourth fingerprint information do not match.

[0017] Alternatively, in the above electronic device, it is preferable that the display unit further has a function of displaying a second icon and a function of detecting a touch operation in a display area of the second icon, and the control unit has a function of executing a third process associated with the second icon when the display unit detects a touch operation on the second icon.

[0018] One aspect of the present invention is an electronic device having a control unit, a storage unit, and a display unit. The display unit has a function of displaying a first icon and a function of acquiring a plurality of first fingerprint information in a display area of the first icon. The storage unit has a function of holding a plurality of second fingerprint information. The control unit has a function of collating each of the first fingerprint information with the plurality of second fingerprint information, and when each of the first fingerprint information matches any of the plurality of second fingerprint information, a function of executing a first process associated with the first icon, and when at least one of the first fingerprint information does not match any of the plurality of second fingerprint information, a function of executing a second process.

[0019] In each of the above program and the electronic device, it is preferable that the second process is a process of locking the information associated with the first icon.

[0020] Alternatively, in each of the above program and the electronic device, the first process is a process of displaying the information associated with the first icon on the display unit, and the second process is preferably a process of displaying information different from the information associated with the first icon on the display unit.

Advantages of the Invention

[0021] According to one aspect of the present invention, it is possible to provide an electronic device with a high security level. Alternatively, it is possible to provide an electronic device that can preferably suppress unauthorized use. Alternatively, it is possible to provide a novel electronic device.

[0022] Note that the description of these effects does not prevent the existence of other effects. One aspect of the present invention does not necessarily have all of these effects. It is possible to extract other effects from the description of the specification, drawings, and claims.

Brief Description of the Drawings

[0023] FIG. 1 is a block diagram of an electronic device according to one aspect of the present invention. FIG. 2 is a flowchart related to the operation of an electronic device according to one aspect of the present invention. Figures 3A to 3C are diagrams for explaining a configuration example of an electronic device and an example of its operation method according to an aspect of the present invention. Figures 4A to 4C are diagrams for explaining a configuration example of an electronic device and an example of its operation method according to an aspect of the present invention. Figures 5A to 5C are diagrams for explaining a configuration example of an electronic device and an example of its operation method according to an aspect of the present invention. Figures 6A to 6C are diagrams for explaining a configuration example of an electronic device and an example of its operation method according to an aspect of the present invention. Figures 7A to 7E are diagrams for explaining a configuration example of an electronic device and an example of its operation method according to an aspect of the present invention. Figure 8 is a diagram for explaining a configuration example of an electronic device according to an aspect of the present invention. Figure 9 is a block diagram of an electronic device according to an aspect of the present invention. Figures 10A to 10D and 10F are cross-sectional views showing an example of a display device. Figures 10E and 10G are diagrams showing examples of images captured by the display device. Figures 10H and 10J to 10L are top views showing an example of a pixel. Figures 11A to 11G are top views showing an example of a pixel. Figures 12A and 12B are cross-sectional views showing an example of a display device. Figures 13A and 13B are cross-sectional views showing an example of a display device. Figures 14A to 14C are cross-sectional views showing an example of a display device. Figure 15A is a cross-sectional view showing an example of a display device. Figures 15B and 15C are diagrams showing an example of the top layout of a resin layer. Figure 16 is a perspective view showing an example of a display device. Figure 17 is a cross-sectional view showing an example of a display device. Figure 18 is a cross-sectional view showing an example of a display device. Figure 19A is a cross-sectional view showing an example of a display device. Figure 19B is a cross-sectional view showing an example of a transistor. Figures 20A and 20B are circuit diagrams showing an example of a pixel circuit. Figures 21A and 21B are diagrams showing an example of an electronic device. Figures 22A to 22D are diagrams showing an example of an electronic device. Figs. 23A to 23F are diagrams showing an example of an electronic device.

Mode for Carrying Out the Invention

[0024] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be easily understood by those skilled in the art that the form and details thereof can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention is not to be construed as being limited to the description of the embodiments shown below.

[0025] In the configuration of the invention described below, the same reference numerals are commonly used for the same parts or parts having the same functions among different drawings, and the repeated description thereof will be omitted. In addition, when referring to the same function, the hatch pattern may be the same and may not be particularly labeled.

[0026] In addition, the positions, sizes, ranges, etc. of the respective components shown in the drawings may not represent the actual positions, sizes, ranges, etc. for the sake of easy understanding. For this reason, the disclosed invention is not necessarily limited to the positions, sizes, ranges, etc. disclosed in the drawings.

[0027] Note that the terms "film" and "layer" can be interchanged with each other depending on the case or the situation. For example, it is possible to change the term "conductive layer" to the term "conductive film". Or, for example, it is possible to change the term "insulating film" to the term "insulating layer".

[0028] (Embodiment 1) In the present embodiment, an electronic device according to an aspect of the present invention and an operation method of the electronic device will be described.

[0029] In the drawings attached to this specification, the components are classified by function and shown as independent blocks in a block diagram. However, in reality, it is difficult to completely separate the components by function, and it is possible that one component is related to multiple functions or one function is realized by multiple components.

[0030] An electronic device according to one aspect of the present invention has a function of displaying an icon on a display unit, a function of acquiring fingerprint information in a display area of the icon, and a function of executing user authentication processing using the fingerprint information. For example, when a user accesses information with a high security level, fingerprint information can be acquired in the display area of the icon associated with the information, and authentication processing can be executed. Therefore, even when an unauthorized person unlocks the electronic device or logs in to various systems in an improper manner, access to information with a high security level can be prevented. Also, for processes that require high security, such as purchase settlement, email transmission, and file deletion, unauthorized execution can be prevented.

[0031] Also, for example, in the case of an electronic device that requires a password when accessing information associated with an icon, if the password is obtained illegally, there is a risk that malicious users will misuse the information associated with the icon. Also, by requiring a password, there is a risk that malicious users will notice that the information associated with the icon is important. Also, in the case of an electronic device that displays content indicating that fingerprint authentication has failed when the user touches the icon and fingerprint authentication fails, there is a risk that the user will notice that user authentication processing has been executed and that the information associated with the icon is important. In this specification and the like, touching an icon means touching the display area of the icon on the display unit.

[0032] In the electronic device according to one aspect of the present invention, when a user accesses information associated with an icon, fingerprint authentication is imposed, so that a malicious user can be prevented from illegally accessing the information. Further, in the electronic device according to one aspect of the present invention, when a user accesses information associated with an icon, fingerprint authentication is imposed, and different information is displayed depending on the success or failure thereof. Therefore, it is possible to make it difficult for the user to notice that the user authentication process has been executed and further that the information associated with the icon is important.

[0033] Further, in the electronic device according to one aspect of the present invention, when accessing information associated with an icon, authentication of fingerprints of a plurality of persons may be required. Thereby, higher security can be ensured as compared with an electronic device that requires only one fingerprint or an electronic device that requires a password.

[0034] Hereinafter, a more specific configuration example of the electronic device according to one aspect of the present invention will be described with reference to the drawings.

[0035] [Configuration Example of Electronic Device] FIG. 1 shows a block diagram of an electronic device 10 according to one aspect of the present invention. The electronic device 10 includes a control unit 11, a storage unit 12, and a display unit 13. The electronic device 10 can be used as, for example, an information terminal device.

[0036] The display unit 13 has a function of displaying an image, a function of detecting a touch operation, and a function of acquiring fingerprint information. That is, the display unit 13 has a function of outputting the position information of the finger that touched the screen to the control unit 11, and a function of imaging the fingerprint of the finger and outputting the image information as fingerprint information to the control unit. For example, a display device described in detail in Embodiment 2 can be used for the display unit 13. Note that the touch operation includes contact and may include proximity. Further, the touch operation can also be referred to as an input operation or a touch input by touch.

[0037] It is preferable that the touch operation can be detected and the fingerprint information can be acquired at any part on the display unit 13.

[0038] The display unit 13 preferably has a function of detecting a plurality of touch operations and a function of acquiring fingerprint information of a plurality of fingers.

[0039] The storage unit 12 has a function of holding fingerprint information of pre-registered users. The storage unit 12 can output the fingerprint information to the control unit 11 in response to a request from the control unit 11.

[0040] Preferably, the storage unit 12 holds fingerprint information of all fingers used by the user for screen operations. For example, it can hold fingerprint information of two fingers, the index finger of the user's right hand and the index finger of the left hand. In addition to this, it is preferable that it can hold fingerprint information of one or more of the middle finger, ring finger, little finger, and thumb. Also, it may hold fingerprint information of a plurality of users.

[0041] The control unit 11 has a function of collating the fingerprint information input from the display unit 13 with the pre-registered fingerprint information (which can also be called a fingerprint authentication function). Further, the control unit 11 can execute processing according to the success or failure of fingerprint authentication. When the control unit 11 determines that these two pieces of fingerprint information match, the control unit 11 executes the first processing associated with the touched icon. Examples of the first processing include processing such as opening a file or folder, starting software or an application, deleting data, executing a purchase process or sending an email. The control unit 11 can further display information on the display unit 13 based on these processes. For example, the control unit 11 displays the first information associated with the touched icon on the display unit 13. On the other hand, when the control unit 11 determines that these two pieces of fingerprint information do not match, the control unit 11 executes a second process different from the first process associated with the icon. Examples of the second processing include, for example, locking information or a system, displaying a message indicating that authentication has failed (error display), opening a file or folder different from the first processing, starting software or an application different from the first processing, protecting data, and aborting a purchase process or email sending. The control unit 11 can further display information on the display unit 13 based on these processes. For example, the control unit 11 locks the first information associated with the icon or displays second information different from the first information associated with the icon.

[0042] As a method of fingerprint authentication executed by the control unit 11, for example, methods such as a template matching method or a pattern matching method of comparing two images and evaluating their similarity can be used. For example, when the similarity value is equal to or greater than a predetermined value, it can be determined that the two pieces of fingerprint information match. Further, fingerprint authentication processing may be executed by inference using machine learning. At this time, it is preferably performed by inference using a neural network in particular.

[0043] Further, the control unit 11 can function as, for example, a central processing unit (CPU: Central Processing Unit). The control unit 11 interprets and executes instructions from various programs by a processor to perform various data processes and program controls. Programs that can be executed by the processor may be stored in a memory area of the processor or may be stored in the storage unit 12.

[0044] [Operation Example of Electronic Device 10] Hereinafter, an example of the operation of the electronic device 10 will be described. FIG. 2 is a flowchart related to the operation of the electronic device 10. The flowchart shown in FIG. 2 has steps S1 to S5.

[0045] First, in step S1, the display unit 13 detects a touch operation. When the display unit 13 detects a touch operation on the icon for which fingerprint authentication is to be performed (YES), the process proceeds to step S2. If the touch operation on the icon is not performed (NO), the device waits until a touch operation is performed (returns to step S1 again).

[0046] In step S2, fingerprint information is acquired in the display area of the icon on the display unit 13.

[0047] In step S3, the control unit 11 compares the fingerprint information acquired in step S2 with the fingerprint information registered in advance. When the authentication is successful (when the control unit 11 determines that the two fingerprint informations match) (YES), the process proceeds to step S4. When the authentication fails (when the control unit 11 determines that the two fingerprint informations do not match) (NO), the process proceeds to step S5.

[0048] In step S4, the control unit 11 executes a process (first process) associated with the icon displayed on the display unit 13 that the user has touched. Examples of the process associated with the icon displayed on the display unit 13 include a process of displaying information associated with the icon.

[0049] In step S5, the control unit 11 executes a process (second process) different from the process associated with the icon displayed on the display unit 13 that the user has touched. Examples of the second process include a process of locking information associated with the icon, a process of displaying second information different from the information associated with the icon, and the like.

[0050] The above is the description of the flowchart shown in FIG. 2.

[0051] Note that a processing method, an operation method, an operation method, a display method, etc. executed by the electronic device according to an aspect of the present invention can be described as a program, for example. For example, a program describing a processing method, an operation method, an operation method, a display method, etc. executed by the electronic device 10 etc. exemplified above is stored in a non-temporary computer-readable recording medium (also simply referred to as a recording medium or a storage medium), and is read and executed by an arithmetic device etc. included in the control unit 11 of the electronic device 10. That is, a program for causing the above-exemplified operation method etc. to be executed by hardware, and a non-temporary computer-readable recording medium storing the program are an aspect of the present invention.

[0052] As the non-temporary computer-readable recording medium, a hard disk drive (HDD), a solid state drive (SSD), a flash memory, a Blu-ray disc, a DVD, etc. can be used.

[0053] [Specific Example] Hereinafter, a specific example of the electronic device according to an aspect of the present invention will be described.

[0054] FIG. 3A schematically shows an electronic device 30 and a finger 21. The electronic device 30 has a display unit 31. The electronic device 30 is, for example, a portable information terminal device that functions as a smartphone. The finger 21 is touching an icon 32 displayed on the display unit 31. At this time, fingerprint authentication of the finger 21 is performed.

[0055] FIG. 3B shows fingerprint 22 obtained from finger 21 and fingerprint information 23 previously registered in the electronic device 30. In this case, since fingerprint 22 and fingerprint information 23 match, the process (first process) associated with the icon 32 touched by finger 21 is executed.

[0056] FIG. 3C shows fingerprint 22X obtained from finger 21 and fingerprint information 23 previously registered in the electronic device 30. In this case, since fingerprint 22X and fingerprint information 23 do not match, a second process different from the process associated with the icon 32 touched by finger 21 is executed.

[0057] FIG. 4A shows a state where finger 21 touches icon 32 displayed on the electronic device 30. At this time, since fingerprint 22X of finger 21 does not match the fingerprint information 23 previously registered in the electronic device 30, the second process described above is executed (FIG. 4B). Here, an example where the information associated with icon 32 is locked is shown. At that time, as shown in FIG. 4C, information 33 (Information Locked) indicating that the information associated with icon 32 has been locked may be displayed on the display unit 31.

[0058] In FIG. 5A, since fingerprint 22 obtained from finger 21 that touched icon 32 matches the previously registered fingerprint information 23, the first process described above is executed (FIG. 5B). Here, an example where the information associated with icon 32 is displayed is shown. As shown in FIG. 5C, first information 35 (File A) is displayed on the display unit 31.

[0059] On the other hand, in FIGS. 6A and 6B, fingerprint 22X obtained from finger 21 that touched icon 32 does not match the previously registered fingerprint information 23. Therefore, the second process described above is executed. In FIG. 6C, an example where second information 36 (File B) is displayed is shown.

[0060] As shown in FIG. 4C, as a second process, if it is indicated that the information is locked, there is a risk that the user will notice that the user authentication process has been executed and furthermore that the information associated with the icon is important. In FIG. 6C, File B, which is different from File A as the first information 35, is displayed as the second information 36. Therefore, it is possible to make it difficult for the user to notice that the user authentication process has been executed and furthermore that the information associated with the icon is important.

[0061] FIG. 7 shows an example in which multiple fingerprint authentications are required to execute the process associated with the icon 32. First, as shown in FIG. 7A, when the finger 21 touches the icon 32, the fingerprint authentication is started. The fingerprint 22 is obtained from the finger 21, and when it is determined that the fingerprint 22 matches the pre-registered fingerprint information 23 (see FIG. 7D), the process proceeds to the step of authenticating the next fingerprint. Next, as shown in FIG. 7B, when the finger 24 touches the icon 32, the fingerprint authentication is performed. When it is determined that the fingerprint 25 obtained from the finger 24 matches the pre-registered fingerprint information 26 (see FIG. 7E), the process associated with the icon 32 is executed. As shown in FIG. 7C, information 34 (Access Accepted) indicating that the fingerprint authentication has been successful may be displayed on the display unit 31.

[0062] Note that after obtaining the fingerprint 22 from the finger 21 and obtaining the fingerprint 25 from the finger 24, the comparison between the fingerprint 22 and the fingerprint information 23, and the comparison between the fingerprint 25 and the fingerprint information 26 may be performed. Alternatively, after obtaining the fingerprint 22 from the finger 21, the acquisition of the fingerprint 25 and the comparison between the fingerprint 22 and the fingerprint information 23 may be performed in parallel.

[0063] FIG. 8 shows another example in which multiple fingerprint authentications are required to execute the process associated with the icon 32.

[0064] The electronic device 40 shown in FIG. 8 functions as a notebook personal computer.

[0065] The electronic device 40 includes a display unit 41, an input unit 42, a plurality of input keys 43, a housing 44, a housing 45, a hinge portion 46, etc. The display unit 41 is provided in the housing 44. The input unit 42 and the input keys 43 are provided in the housing 45. The housing 44 and the housing 45 are connected by the hinge portion 46.

[0066] In FIG. 8, the finger 21 and the finger 24 are touching the icon 32 displayed on the display unit 41. The display unit 41 has a function of capturing the fingerprints of a plurality of fingers that have touched the icon 32 and outputting the image information as fingerprint information to a control unit (not shown). Therefore, the control unit can recognize that both the finger 21 and the finger 24 are touching the icon 32 and perform fingerprint authentication for the finger 21 and the finger 24. When the fingerprint authentication of the finger 21 and the finger 24 is successful, the process associated with the icon 32 is executed.

[0067] Note that the fingerprint information to be authenticated may be different depending on the icon. For example, when a finger having a first fingerprint touches a first icon, the process associated with the first icon is executed. On the other hand, when a finger having a fingerprint other than the first fingerprint touches the first icon, the process associated with the first icon is not executed. And when a finger having a second fingerprint touches a second icon, the process associated with the second icon is executed. On the other hand, when a finger having a fingerprint other than the second fingerprint touches the second icon, the process associated with the second icon is not executed. Thus, for example, in an electronic device shared by multiple people, files that can be opened only with the fingerprint of user A, folders that can be opened only with the fingerprint of user B, etc. can be created as appropriate.

[0068] Among the icons displayed on the electronic device, the number of icons for fingerprint authentication may be one or more. For example, fingerprint authentication may be performed on an icon associated with highly secure information or processing, and fingerprint authentication may not be required for an icon associated with relatively less secure information or processing. For an icon for which fingerprint authentication is not performed, the process associated with the icon is executed when the icon is touched, regardless of the fingerprint of the touched finger.

[0069] [Modification Example] In the above, an example in which the display unit 13 has a function of detecting a touch operation has been shown, but the present invention is not limited to this. As in the electronic device 10A shown in FIG. 9, a detection unit 14 having a function of detecting a touch operation may be provided separately from the display unit 13.

[0070] The display unit 13 has a function of displaying an image and a function of acquiring fingerprint information. Specifically, the display unit 13 has a function of displaying an icon and acquiring fingerprint information in the display area of the icon. The detection unit 14 has a function of detecting a touch operation. As the detection unit 14, a capacitive touch sensor or the like can be used.

[0071] This embodiment can be appropriately combined with other embodiments. Also, in this specification, when a plurality of configuration examples are shown in one embodiment, the configuration examples can be appropriately combined.

[0072] (Embodiment 2) In this embodiment, a display device according to an aspect of the present invention will be described with reference to FIGS. 10 to 19.

[0073] The display device of this embodiment can be suitably used for the display unit of the electronic device described in Embodiment 1.

[0074] The display unit of the display device according to one aspect of the present invention has a function of displaying an image using a light-emitting element (also referred to as a light-emitting device). Further, the display unit also has one or both of an imaging function and a sensing function.

[0075] The display device according to one aspect of the present invention has a light-receiving element (also referred to as a light-receiving device) and a light-emitting element. Alternatively, the display device according to one aspect of the present invention has a light-receiving and emitting element (also referred to as a light-receiving and emitting device) and a light-emitting element.

[0076] First, a display device having a light-receiving element and a light-emitting element will be described.

[0077] The display device according to one aspect of the present invention has a light-receiving element and a light-emitting element in the display unit. In the display device according to one aspect of the present invention, the light-emitting elements are arranged in a matrix in the display unit, and an image can be displayed on the display unit. Further, the light-receiving elements are arranged in a matrix in the display unit, and the display unit has one or both of an imaging function and a sensing function. The display unit can be used for an image sensor or a touch sensor. That is, by detecting light in the display unit, an image can be captured or a touch operation of an object (such as a finger or a pen) can be detected. Furthermore, in the display device according to one aspect of the present invention, the light-emitting element can be used as a light source of the sensor. Therefore, it is not necessary to provide a light-receiving unit and a light source separately from the display device, and the number of components of the electronic device can be reduced.

[0078] In the display device according to one aspect of the present invention, when the light emitted by the light-emitting element included in the display unit is reflected (or scattered) by an object, the light-receiving element can detect the reflected light (or scattered light). Therefore, imaging and touch operation detection are possible even in a dark place.

[0079] The display device according to one aspect of the present invention has a function of displaying an image using a light-emitting element. That is, the light-emitting element functions as a display element (also referred to as a display device).

[0080] As the light-emitting element, it is preferable to use an EL element (also referred to as an EL device) such as an OLED (Organic Light Emitting Diode) or a QLED (Quantum-dot Light Emitting Diode). Examples of the light-emitting substance included in the EL element are a substance that emits fluorescence (fluorescent material), a substance that emits phosphorescence (phosphorescent material), an inorganic compound (such as a quantum dot material), and a substance that exhibits thermally activated delayed fluorescence (thermally activated delayed fluorescence (TADF) material). Further, as the light-emitting element, an LED such as a micro LED (Light Emitting Diode) can also be used.

[0081] The display device according to one aspect of the present invention has a function of detecting light by using a light-receiving element.

[0082] When the light-receiving element is used as an image sensor, the display device can capture an image by using the light-receiving element. For example, the display device of the present embodiment can be used as a scanner.

[0083] For example, by using an image sensor, data related to biometric information such as fingerprints and palm prints can be acquired. That is, a biometric authentication sensor can be incorporated in the display device. By incorporating the biometric authentication sensor in the display device, the number of components of the electronic device can be reduced as compared with the case where a biometric authentication sensor is provided separately from the display device, and the electronic device can be miniaturized and lightened.

[0084] When the light-receiving element is used as a touch sensor, the display device can detect a touch operation of an object by using the light-receiving element.

[0085] As the light-receiving element, for example, a pn-type or pin-type photodiode can be used. The light-receiving element functions as a photoelectric conversion element (also referred to as a photoelectric conversion device) that detects light incident on the light-receiving element and generates electric charges. The amount of electric charges generated from the light-receiving element is determined based on the amount of light incident on the light-receiving element.

[0086] In particular, as the light-receiving element, it is preferable to use an organic photodiode having a layer containing an organic compound. Since the organic photodiode can be easily thinned, lightened, and enlarged in area, and also has a high degree of freedom in shape and design, it can be applied to various display devices.

[0087] In one aspect of the present invention, an organic EL element (also referred to as an organic EL device) is used as the light-emitting element, and an organic photodiode is used as the light-receiving element. The organic EL element and the organic photodiode can be formed on the same substrate. Therefore, an organic photodiode can be incorporated into a display device using an organic EL element.

[0088] If all the layers constituting the organic EL element and the organic photodiode are to be made separately, the number of film-forming steps will be very large. Since the organic photodiode has many layers that can have a common configuration with the organic EL element, the layers that can have a common configuration can be formed in a batch, thereby suppressing an increase in the film-forming steps.

[0089] For example, one of the pair of electrodes (common electrode) can be a common layer for the light-receiving element and the light-emitting element. Further, for example, it is preferable that at least one of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer is a common layer for the light-receiving element and the light-emitting element. Further, for example, except that the light-receiving element has an active layer and the light-emitting element has a light-emitting layer, the light-receiving element and the light-emitting element can have the same configuration. That is, a light-receiving element can also be manufactured only by replacing the light-emitting layer of the light-emitting element with an active layer. Thus, since the light-receiving element and the light-emitting element have a common layer, the number of film-forming times and the number of masks can be reduced, and the manufacturing process and manufacturing cost of the display device can be reduced. Further, a display device having a light-receiving element can be manufactured using the existing manufacturing apparatus and manufacturing method of the display device.

[0090] Note that the layers shared by the light-receiving element and the light-emitting element may have different functions in the light-emitting element and the light-receiving element. In this specification, components are named based on their functions in the light-emitting element. For example, the hole injection layer functions as a hole injection layer in the light-emitting element and as a hole transport layer in the light-receiving element. Similarly, the electron injection layer functions as an electron injection layer in the light-emitting element and as an electron transport layer in the light-receiving element. Also, the layers shared by the light-receiving element and the light-emitting element may have the same functions in the light-emitting element and the light-receiving element. The hole transport layer functions as a hole transport layer in both the light-emitting element and the light-receiving element, and the electron transport layer functions as an electron transport layer in both the light-emitting element and the light-receiving element.

[0091] Next, a display device having a light-receiving and emitting element and a light-emitting element will be described.

[0092] In the display device according to one aspect of the present invention, a sub-pixel that exhibits any color has a light-receiving and emitting element instead of a light-emitting element, and sub-pixels that exhibit other colors have light-emitting elements. The light-receiving and emitting element has both a function of emitting light (light-emitting function) and a function of receiving light (light-receiving function). For example, when a pixel has three sub-pixels: a red sub-pixel, a green sub-pixel, and a blue sub-pixel, at least one sub-pixel has a light-receiving and emitting element, and the other sub-pixels have light-emitting elements. Therefore, the display unit of the display device according to one aspect of the present invention has a function of displaying an image using both the light-receiving and emitting element and the light-emitting element.

[0093] By the light-receiving and emitting element serving as both a light-emitting element and a light-receiving element, a light-receiving function can be imparted to a pixel without increasing the number of sub-pixels included in the pixel. As a result, one or both of an imaging function and a sensing function can be added to the display unit of the display device while maintaining the aperture ratio of the pixel (the aperture ratio of each sub-pixel) and the definition of the display device. Therefore, the display device according to one aspect of the present invention can achieve a higher aperture ratio of the pixel and is more easily capable of high definition compared to the case where a sub-pixel having a light-receiving element is provided separately from the sub-pixel having a light-emitting element.

[0094] In a display device according to one aspect of the present invention, a light-emitting element and a light-emitting and receiving element are arranged in a matrix in a display unit, and an image can be displayed on the display unit. Further, the display unit can be used for an image sensor or a touch sensor. The display device according to one aspect of the present invention can use the light-emitting element as a light source of the sensor. Therefore, it is not necessary to provide a light-receiving unit and a light source separately from the display device, and the number of components of the electronic device can be reduced.

[0095] In the display device according to one aspect of the present invention, when the light emitted from the light-emitting element included in the display unit is reflected (or scattered) by an object, the light-emitting and receiving element can detect the reflected light (or scattered light). Therefore, imaging and touch operation detection are possible even in a dark place.

[0096] The light-emitting and receiving element can be manufactured by combining an organic EL element and an organic photodiode. For example, a light-emitting and receiving element can be manufactured by adding an active layer of an organic photodiode to the stacked structure of the organic EL element. Further, the light-emitting and receiving element manufactured by combining an organic EL element and an organic photodiode can suppress an increase in the film-forming process by collectively forming layers that can have the same configuration as the organic EL element.

[0097] For example, one of a pair of electrodes (common electrode) can be a common layer for the light-emitting and receiving element and the light-emitting element. Further, for example, it is preferable that at least one of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer is a common layer for the light-emitting and receiving element and the light-emitting element. Further, for example, except for the presence or absence of the active layer of the light-receiving element, the light-emitting and receiving element and the light-emitting element can have the same configuration. That is, a light-emitting and receiving element can also be manufactured by simply adding the active layer of the light-receiving element to the light-emitting element. Thus, since the light-emitting and receiving element and the light-emitting element have a common layer, the number of film-forming times and the number of masks can be reduced, and the manufacturing process and manufacturing cost of the display device can be reduced. Further, a display device having a light-emitting and receiving element can be manufactured using an existing manufacturing apparatus and manufacturing method of the display device.

[0098] Note that the layers of the light-emitting and light-receiving element may have different functions when the light-emitting and light-receiving element functions as a light-receiving element and when it functions as a light-emitting element. In this specification, components are named based on the functions when the light-emitting and light-receiving element functions as a light-emitting element. For example, the hole injection layer functions as a hole injection layer when the light-emitting and light-receiving element functions as a light-emitting element, and functions as a hole transport layer when the light-emitting and light-receiving element functions as a light-receiving element. Similarly, the electron injection layer functions as an electron injection layer when the light-emitting and light-receiving element functions as a light-emitting element, and functions as an electron transport layer when the light-emitting and light-receiving element functions as a light-receiving element. Also, the layers of the light-emitting and light-receiving element may have the same function when the light-emitting and light-receiving element functions as a light-receiving element and when it functions as a light-emitting element. The hole transport layer functions as a hole transport layer regardless of whether it functions as a light-emitting element or a light-receiving element, and the electron transport layer functions as an electron transport layer regardless of whether it functions as a light-emitting element or a light-receiving element.

[0099] The display device of this embodiment has a function of displaying an image using a light-emitting element and a light-emitting and light-receiving element. That is, the light-emitting element and the light-emitting and light-receiving element function as display elements.

[0100] The display device of this embodiment has a function of detecting light using a light-emitting and light-receiving element. The light-emitting and light-receiving element can detect light with a shorter wavelength than the light emitted by the light-emitting and light-receiving element itself.

[0101] When the light-emitting and light-receiving element is used as an image sensor, the display device of this embodiment can capture an image using the light-emitting and light-receiving element. For example, the display device of this embodiment can be used as a scanner.

[0102] Also, when the light-emitting and light-receiving element is used as a touch sensor, the display device of this embodiment can detect a touch operation of an object using the light-emitting and light-receiving element.

[0103] The light-receiving and emitting element functions as a photoelectric conversion element that detects light incident on the light-receiving and emitting element and generates electric charges. The amount of electric charges generated from the light-receiving and emitting element is determined based on the amount of light incident on the light-receiving and emitting element.

[0104] The light-receiving and emitting element can be manufactured by adding an active layer of a light-receiving element to the structure of the above light-emitting element.

[0105] For example, a pn-type or pin-type photodiode structure can be applied to the light-receiving and emitting element.

[0106] In particular, it is preferable to use the active layer of an organic photodiode having a layer containing an organic compound for the light-receiving and emitting element. Since the organic photodiode can be easily thinned, lightened, and enlarged in area, and also has a high degree of freedom in shape and design, it can be applied to various display devices.

[0107] Hereinafter, the display device according to one aspect of the present invention will be described more specifically with reference to the drawings.

[0108] [Display Device] Cross-sectional views of a display device according to one aspect of the present invention are shown in FIGS. 10A to 10D and FIG. 10F.

[0109] The display device 200A shown in FIG. 10A has a layer 203 having a light-receiving element, a functional layer 205, and a layer 207 having a light-emitting element between a substrate 201 and a substrate 209.

[0110] The display device 200A is configured such that light of red (R), green (G), and blue (B) is emitted from the layer 207 having a light-emitting element.

[0111] The light-receiving element included in the layer 203 having a light-receiving element can detect light incident from the outside of the display device 200A.

[0112] The display device 200B shown in FIG. 10B has a layer 204 having a light-receiving and emitting element, a functional layer 205, and a layer 207 having a light-emitting element between a substrate 201 and a substrate 209.

[0113] The display device 200B is configured such that green (G) light and blue (B) light are emitted from the layer 207 having the light-emitting element, and red (R) light is emitted from the layer 204 having the light-receiving and light-emitting element. Note that in the display device according to one aspect of the present invention, the color of the light emitted from the layer 204 having the light-receiving and light-emitting element is not limited to red. Also, the color of the light emitted from the layer 207 having the light-emitting element is not limited to the combination of green and blue.

[0114] The light-receiving and light-emitting element included in the layer 204 having the light-receiving and light-emitting element can detect light incident from outside the display device 200B. The light-receiving and light-emitting element can detect, for example, one or both of green (G) light and blue (B) light.

[0115] The functional layer 205 has a circuit for driving the light-receiving element or the light-receiving and light-emitting element and a circuit for driving the light-emitting element. The functional layer 205 can be provided with switches, transistors, capacitors, resistors, wirings, terminals, and the like. Note that when the light-emitting element and the light-receiving element are driven in a passive matrix system, a configuration in which no switches or transistors are provided may be employed.

[0116] The display device according to one aspect of the present invention may have a function of detecting an object such as a finger touching the display device (function as a touch panel). For example, as shown in FIG. 10C, light emitted from the light-emitting element in the layer 207 having the light-emitting element is reflected by the finger 202 touching the display device 200A, and the light-receiving element in the layer 203 having the light-receiving element detects the reflected light. Thereby, it can be detected that the finger 202 has touched the display device 200A. Also, in the display device 200B, light emitted from the light-emitting element in the layer 207 having the light-emitting element is reflected by the finger touching the display device 200B, and the light-receiving and light-emitting element in the layer 204 having the light-receiving and light-emitting element can detect the reflected light. Note that hereinafter, the case where the light emitted from the light-emitting element is reflected by the object will be described as an example, but the light may be scattered by the object.

[0117] As shown in FIG. 10D, the display device according to one aspect of the present invention may have a function of detecting or imaging an object (not in contact) close to the display device.

[0118] The display device according to one aspect of the present invention may have a function of detecting the fingerprint of the finger 202. FIG. 10E shows an image diagram of an image captured by the display device according to one aspect of the present invention. In FIG. 10E, the outline of the finger 202 is shown by a broken line and the outline of the contact portion 261 is shown by a dashed-dotted line within the imaging range 263. Within the contact portion 261, an image of the fingerprint 262 with high contrast can be captured due to the difference in the amount of light incident on the light receiving element (or light emitting and receiving element).

[0119] The display device according to one aspect of the present invention can also function as a tablet. FIG. 10F shows a state where the tip of the stylus 208 is in contact with the substrate 209 and is being slid in the direction of the broken-line arrow.

[0120] As shown in FIG. 10F, the scattered light scattered at the contact surface between the tip of the stylus 208 and the substrate 209 is incident on the light receiving element (or light emitting and receiving element) located at the portion overlapping the contact surface, so that the position of the tip of the stylus 208 can be detected with high accuracy.

[0121] FIG. 10G shows an example of the locus 266 of the stylus 208 detected by the display device according to one aspect of the present invention. Since the display device according to one aspect of the present invention can detect the position of a detected object such as the stylus 208 with high position accuracy, it is also possible to perform high-definition drawing in a drawing application or the like. Also, different from the case of using a capacitive touch sensor or an electromagnetic induction type touch pen, since the position of a highly insulating detected object can be detected, the material of the tip portion of the stylus 208 is not limited, and various writing utensils (for example, pens, glass pens, feather pens, etc.) can be used.

[0122] [Pixel] The display device according to one aspect of the present invention has a plurality of pixels arranged in a matrix. One pixel has a plurality of sub-pixels. One sub-pixel has one light-emitting element, one light-emitting and receiving element, or one light-receiving element.

[0123] Each of the plurality of pixels has one or more of a sub-pixel having a light-emitting element, a sub-pixel having a light-receiving element, and a sub-pixel having a light-emitting and receiving element.

[0124] For example, a pixel has a plurality (e.g., three or four) of sub-pixels having light-emitting elements and one sub-pixel having a light-receiving element.

[0125] Note that the light-receiving elements may be provided in all the pixels, or may be provided in some of the pixels. Also, one pixel may have a plurality of light-receiving elements. Further, one light-receiving element may be provided across a plurality of pixels. The fineness of the light-receiving elements and the fineness of the light-emitting elements may be different from each other.

[0126] When a pixel has three sub-pixels having light-emitting elements, examples of the three sub-pixels include sub-pixels of three colors, R, G, and B, and sub-pixels of three colors, yellow (Y), cyan (C), and magenta (M). When a pixel has four sub-pixels having light-emitting elements, examples of the four sub-pixels include sub-pixels of four colors, R, G, B, and white (W), and sub-pixels of four colors, R, G, B, and Y.

[0127] FIGS. 10H, 10J, 10K, and 10L show an example of a pixel having a plurality of sub-pixels having light-emitting elements and one sub-pixel having a light-receiving element. Note that the arrangement of the sub-pixels shown in this embodiment is not limited to the illustrated order. For example, the positions of sub-pixel (B) and sub-pixel (G) may be reversed.

[0128] Each of the pixels shown in FIGS. 10H, 10J, and 10K has a sub-pixel (PD) having a light-receiving function, a sub-pixel (R) presenting red light, a sub-pixel (G) presenting green light, and a sub-pixel (B) presenting blue light.

[0129] A matrix array is applied to the pixel shown in FIG. 10H, and a stripe array is applied to the pixel shown in FIG. 10J. Further, FIG. 10K shows an example in which a sub-pixel (R) that emits red light, a sub-pixel (G) that emits green light, and a sub-pixel (B) that emits blue light are arranged in a single horizontal row, and a sub-pixel (PD) having a light-receiving function is arranged below them. That is, in FIG. 10K, the sub-pixels (R), (G), and (B) are arranged in the same row as each other, and are arranged in a row different from the sub-pixel (PD).

[0130] In addition to the configuration of the pixel shown in FIG. 10K, the pixel shown in FIG. 10L has a sub-pixel (X) that emits light other than R, G, and B. Examples of light other than R, G, and B include light such as white (W), yellow (Y), cyan (C), magenta (M), and infrared light (IR). When the sub-pixel (X) emits infrared light, the sub-pixel (PD) having a light-receiving function preferably has a function of detecting infrared light. The sub-pixel (PD) having a light-receiving function may have a function of detecting both visible light and infrared light. The wavelength of the light detected by the light-receiving element can be determined according to the use of the sensor.

[0131] Alternatively, for example, a pixel has a plurality of sub-pixels having a light-emitting element and one sub-pixel having a light-emitting and light-receiving element.

[0132] A display device having a light-emitting and light-receiving element does not need to change the pixel arrangement in order to incorporate a light-receiving function into the pixel, and thus one or both of an imaging function and a sensing function can be added to the display unit without reducing the aperture ratio and the definition.

[0133] Note that the light-emitting and light-receiving elements may be provided in all pixels, or may be provided in some pixels. Also, one pixel may have a plurality of light-emitting and light-receiving elements.

[0134] FIGS. 11A to 11D show an example of a pixel having a plurality of sub-pixels having a light-emitting element and one sub-pixel having a light-emitting and light-receiving element.

[0135] The pixel shown in FIG. 11A has a sub-pixel (R·PD) that exhibits red light and has a light receiving function, a sub-pixel (G) that exhibits green light, and a sub-pixel (B) that exhibits blue light. In a display device in which a pixel is composed of three sub-pixels of R, G, and B, a display device having a light receiving function can be manufactured by replacing the light emitting element used for the R sub-pixel with a light emitting and receiving element.

[0136] The pixel shown in FIG. 11B has a sub-pixel (R·PD) that exhibits red light and has a light receiving function, a sub-pixel (G) that exhibits green light, and a sub-pixel (B) that exhibits blue light. The sub-pixel (R·PD) is arranged in a column different from the sub-pixel (G) and the sub-pixel (B). The sub-pixel (G) and the sub-pixel (B) are alternately arranged in the same column, with one provided in odd rows and the other provided in even rows. Note that the sub-pixel arranged in a column different from the sub-pixels of other colors is not limited to red (R), and may be green (G) or blue (B).

[0137] The pixel shown in FIG. 11C has a matrix array applied, and has a sub-pixel (R·PD) that exhibits red light and has a light receiving function, a sub-pixel (G) that exhibits green light, a sub-pixel (B) that exhibits blue light, and a sub-pixel (X) that exhibits light other than R, G, and B. Also in a display device in which a pixel is composed of four sub-pixels of R, G, B, and X, a display device having a light receiving function can be manufactured by replacing the light emitting element used for the R sub-pixel with a light emitting and receiving element.

[0138] FIG. 11D shows two pixels, and one pixel is composed of three sub-pixels surrounded by dotted lines. The pixel shown in FIG. 11D has a sub-pixel (R·PD) that exhibits red light and has a light-receiving function, a sub-pixel (G) that exhibits green light, and a sub-pixel (B) that exhibits blue light. In the left pixel shown in FIG. 11D, the sub-pixel (G) is arranged in the same row as the sub-pixel (R·PD), and the sub-pixel (B) is arranged in the same column as the sub-pixel (R·PD). In the right pixel shown in FIG. 11D, the sub-pixel (G) is arranged in the same row as the sub-pixel (R·PD), and the sub-pixel (B) is arranged in the same column as the sub-pixel (G). In the pixel layout shown in FIG. 11D, in both odd rows and even rows, the sub-pixels (R·PD), (G), and (B) are repeatedly arranged, and in each column, sub-pixels of different colors are arranged in odd rows and even rows.

[0139] FIG. 11E shows four pixels to which a pentile arrangement is applied, and two adjacent pixels have sub-pixels that exhibit two different colors of light in combination. Note that the shape of the sub-pixel shown in FIG. 11E indicates the upper surface shape of the light-emitting element or the light-emitting and light-receiving element that the sub-pixel has. FIG. 11F is a modified example of the pixel arrangement shown in FIG. 11E.

[0140] The upper-left pixel and the lower-right pixel shown in FIG. 11E have a sub-pixel (R·PD) that exhibits red light and has a light-receiving function, and a sub-pixel (G) that exhibits green light. The lower-left pixel and the upper-right pixel shown in FIG. 11E have a sub-pixel (G) that exhibits green light, and a sub-pixel (B) that exhibits blue light.

[0141] The upper-left pixel and the lower-right pixel shown in FIG. 11F have a sub-pixel (R·PD) that exhibits red light and has a light-receiving function, and a sub-pixel (G) that exhibits green light. The lower-left pixel and the upper-right pixel shown in FIG. 11F have a sub-pixel (R·PD) that exhibits red light and has a light-receiving function, and a sub-pixel (B) that exhibits blue light.

[0142] In FIG. 11E, a sub-pixel (G) that exhibits green light is provided for each pixel. On the other hand, in FIG. 11F, a sub-pixel (R·PD) that exhibits red light and has a light-receiving function is provided for each pixel. Since a sub-pixel having a light-receiving function is provided for each pixel, in the configuration shown in FIG. 11F, imaging can be performed with higher definition than in the configuration shown in FIG. 11E. Thereby, for example, the accuracy of biometric authentication can be improved.

[0143] Further, the upper surface shape of the light-emitting element and the light-emitting and receiving element is not particularly limited, and can be a circle, an ellipse, a polygon, a rounded polygon, or the like. Regarding the upper surface shape of the light-emitting element included in the sub-pixel (G), an example of a circular shape is shown in FIG. 11E, and an example of a square shape is shown in FIG. 11F. The upper surface shapes of the light-emitting elements and the light-emitting and receiving elements of each color may be different from each other, or may be the same for some or all of the colors.

[0144] Also, the aperture ratios of the sub-pixels of each color may be different from each other, or may be the same for some or all of the colors. For example, the aperture ratio of the sub-pixel provided for each pixel (sub-pixel (G) in FIG. 11E, sub-pixel (R·PD) in FIG. 11F) may be made smaller than the aperture ratios of the sub-pixels of other colors.

[0145] FIG. 11G is a modification of the pixel arrangement shown in FIG. 11F. Specifically, the configuration of FIG. 11G is obtained by rotating the configuration of FIG. 11F by 45°. Although it has been described that one pixel is composed of two sub-pixels in FIG. 11F, as shown in FIG. 11G, it can also be considered that one pixel is composed of four sub-pixels.

[0146] In FIG. 11G, it will be described that one pixel is composed of four sub-pixels surrounded by a dotted line. One pixel has two sub-pixels (R·PD), one sub-pixel (G), and one sub-pixel (B). In this way, by having a plurality of sub-pixels having a light-receiving function for one pixel, imaging can be performed with high definition. Therefore, the accuracy of biometric authentication can be improved. For example, the imaging definition can be made √2 times the display definition.

[0147] In the display device to which the configuration shown in FIG. 11F or FIG. 11G is applied, there are p first light-emitting elements (p is an integer of 2 or more), q second light-emitting elements (q is an integer of 2 or more), and r light-receiving and light-emitting elements (r is an integer greater than p and greater than q). p and r satisfy r = 2p. Also, p, q, and r satisfy r = p + q. One of the first light-emitting element and the second light-emitting element emits green light, and the other emits blue light. The light-receiving and light-emitting element emits red light and has a light-receiving function.

[0148] For example, when detecting a touch operation using the light-receiving and light-emitting element, it is preferable that the light emission from the light source is difficult for the user to visually recognize. Since blue light has lower visibility than green light, it is preferable to use a light-emitting element that emits blue light as the light source. Therefore, it is preferable that the light-receiving and light-emitting element has a function of receiving blue light.

[0149] As described above, various arrays of pixels can be applied to the display device of the present embodiment.

[0150] [Device Structure] Next, the detailed configurations of the light-emitting element, the light-receiving element, and the light-receiving and light-emitting element that can be used in the display device of one aspect of the present invention will be described.

[0151] The display device of one aspect of the present invention may be any of a top emission type that emits light in a direction opposite to the substrate on which the light-emitting element is formed, a bottom emission type that emits light on the substrate side where the light-emitting element is formed, and a dual emission type that emits light on both sides.

[0152] In the present embodiment, a top emission type display device will be described as an example.

[0153] In addition, in this specification and the like, unless otherwise specified, even when describing a configuration having a plurality of elements (such as a light-emitting element and a light-emitting layer), when describing matters common to each element, the alphabet is omitted. For example, when describing matters common to the light-emitting layer 283R and the light-emitting layer 283G, etc., it may be described as the light-emitting layer 283.

[0154] The display device 280A shown in Fig. 12A has a light-receiving element 270PD, a light-emitting element 270R that emits red (R) light, a light-emitting element 270G that emits green (G) light, and a light-emitting element 270B that emits blue (B) light.

[0155] Each light-emitting element has a pixel electrode 271, a hole injection layer 281, a hole transport layer 282, a light-emitting layer, an electron transport layer 284, an electron injection layer 285, and a common electrode 275 laminated in this order. The light-emitting element 270R has a light-emitting layer 283R, the light-emitting element 270G has a light-emitting layer 283G, and the light-emitting element 270B has a light-emitting layer 283B. The light-emitting layer 283R has a light-emitting substance that emits red light, the light-emitting layer 283G has a light-emitting substance that emits green light, and the light-emitting layer 283B has a light-emitting substance that emits blue light.

[0156] The light-emitting element is an electroluminescent element that emits light toward the common electrode 275 side by applying a voltage between the pixel electrode 271 and the common electrode 275.

[0157] The light-receiving element 270PD has a pixel electrode 271, a hole injection layer 281, a hole transport layer 282, an active layer 273, an electron transport layer 284, an electron injection layer 285, and a common electrode 275 laminated in this order.

[0158] The light-receiving element 270PD is a photoelectric conversion element that receives light incident from outside the display device 280A and converts it into an electrical signal.

[0159] In this embodiment, it will be described that in both the light-emitting element and the light-receiving element, the pixel electrode 271 functions as an anode and the common electrode 275 functions as a cathode. That is, the light-receiving element can detect the light incident on the light-receiving element, generate charges, and extract them as a current by applying a reverse bias between the pixel electrode 271 and the common electrode 275 and driving it.

[0160] In the display device of this embodiment, an organic compound is used for the active layer 273 of the light-receiving element 270PD. The light-receiving element 270PD can have the same configuration as the light-emitting element for the layers other than the active layer 273. Therefore, the light-receiving element 270PD can be formed in parallel with the formation of the light-emitting element only by adding a step of forming the active layer 273 to the manufacturing process of the light-emitting element. In addition, the light-emitting element and the light-receiving element 270PD can be formed on the same substrate. Therefore, the light-receiving element 270PD can be incorporated into the display device without significantly increasing the manufacturing process.

[0161] In the display device 280A, an example is shown in which the light-receiving element 270PD and the light-emitting element have a common configuration except that the active layer 273 of the light-receiving element 270PD and the light-emitting layer 283 of the light-emitting element are made separately. However, the configurations of the light-receiving element 270PD and the light-emitting element are not limited to this. The light-receiving element 270PD and the light-emitting element may have layers that are made separately from each other in addition to the active layer 273 and the light-emitting layer 283. The light-receiving element 270PD and the light-emitting element preferably have one or more layers (common layers) that are commonly used. Thereby, the light-receiving element 270PD can be incorporated into the display device without significantly increasing the manufacturing process.

[0162] Of the pixel electrode 271 and the common electrode 275, a conductive film that transmits visible light is used for the electrode on the side where light is extracted. In addition, it is preferable to use a conductive film that reflects visible light for the electrode on the side where light is not extracted.

[0163] It is preferable that a micro-optical resonator (microcavity) structure is applied to the light-emitting element included in the display device of the present embodiment. Therefore, it is preferable that one of the pair of electrodes included in the light-emitting element has an electrode (semi-transmissive / semi-reflective electrode) having transmissivity and reflectivity with respect to visible light, and the other has an electrode (reflective electrode) having reflectivity with respect to visible light. By having a microcavity structure in the light-emitting element, the light emitted from the light-emitting layer can be resonated between both electrodes, and the light emitted from the light-emitting element can be enhanced.

[0164] Note that the semi-transmissive / semi-reflective electrode can have a laminated structure of a reflective electrode and an electrode having transmissivity with respect to visible light (also referred to as a transparent electrode).

[0165] The light transmittance of the transparent electrode is set to 40% or more. For example, it is preferable to use an electrode having a visible light (light with a wavelength of 400 nm or more and less than 750 nm) transmittance of 40% or more for the light-emitting element. The visible light reflectivity of the semi-transmissive / semi-reflective electrode is set to 10% or more and 95% or less, preferably 30% or more and 80% or less. The visible light reflectivity of the reflective electrode is set to 40% or more and 100% or less, preferably 70% or more and 100% or less. Also, the resistivity of these electrodes is preferably 1×10 -2 Ωcm or less. Note that when the light-emitting element emits near-infrared light (light with a wavelength of 750 nm or more and 1300 nm or less), it is preferable that the transmittance or reflectivity of the near-infrared light of these electrodes satisfies the above numerical range, similar to the transmittance or reflectivity of visible light.

[0166] The light-emitting element has at least a light-emitting layer 283. The light-emitting element may further have a layer including a substance with high hole-injecting property, a substance with high hole-transporting property, a hole-blocking material, a substance with high electron-transporting property, a substance with high electron-injecting property, or a bipolar substance (a substance with high electron-transporting property and high hole-transporting property) as a layer other than the light-emitting layer 283.

[0167] For example, the light-emitting element and the light-receiving element can have one or more of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer in common. Also, the light-emitting element and the light-receiving element can separately form one or more of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer from each other.

[0168] The hole injection layer is a layer that injects holes from the anode into the hole transport layer and is a layer containing a material with high hole injection properties. As a material with high hole injection properties, an aromatic amine compound or a composite material containing a hole transport material and an acceptor material (electron-accepting material) can be used.

[0169] In the light-emitting element, the hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light-emitting layer. In the light-receiving element, the hole transport layer is a layer that transports holes generated based on light incident on the active layer to the anode. The hole transport layer is a layer containing a hole transport material. As the hole transport material, a substance having a hole mobility of 10 -6 cm 2 / Vs or more is preferable. In addition, as long as it is a substance with higher hole transportability than electrons, other substances can also be used. As the hole transport material, a hole transport material such as a π-electron excess type heteroaromatic compound (for example, a carbazole derivative, a thiophene derivative, a furan derivative, etc.) or an aromatic amine (a compound having an aromatic amine skeleton) is preferable.

[0170] In the light-emitting element, the electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light-emitting layer. In the light-receiving element, the electron transport layer is a layer that transports electrons generated based on light incident on the active layer to the cathode. The electron transport layer is a layer containing an electron transport material. As the electron transport material, 1×10 -6 cm 2A substance having an electron mobility of / Vs or higher is preferred. In addition, any other substances can be used as long as they have a higher electron transport property than holes. As the electron transport material, in addition to metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, etc., oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other highly electron-transporting materials including π-electron-deficient heteroaromatic compounds containing nitrogen-containing heteroaromatic compounds can be used.

[0171] The electron injection layer is a layer that injects electrons from the cathode into the electron transport layer and is a layer containing a material with high electron injection property. As the material with high electron injection property, an alkali metal, an alkaline earth metal, or their compounds can be used. As the material with high electron injection property, a composite material containing an electron transport material and a donor material (electron-donating material) can also be used.

[0172] The light-emitting layer 283 is a layer containing a light-emitting substance. The light-emitting layer 283 can have one or more light-emitting substances. As the light-emitting substance, substances exhibiting light-emitting colors such as blue, purple, blue-violet, green, yellow-green, yellow, orange, and red are appropriately used. In addition, a substance that emits near-infrared light can also be used as the light-emitting substance.

[0173] Examples of the light-emitting substance include a fluorescent material, a phosphorescent material, a TADF material, and a quantum dot material.

[0174] Examples of the fluorescent material include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, naphthalene derivatives, etc.

[0175] Examples of the phosphorescent material include organometallic complexes (especially iridium complexes) having a 4H-triazole skeleton, 1H-triazole skeleton, imidazole skeleton, pyrimidine skeleton, pyrazine skeleton, or pyridine skeleton, organometallic complexes (especially iridium complexes) having a phenylpyridine derivative having an electron-withdrawing group as a ligand, platinum complexes, rare earth metal complexes, and the like.

[0176] In addition to the light-emitting substance (guest material), the light-emitting layer 283 may contain one or more organic compounds (host materials, assist materials, etc.). As the one or more organic compounds, one or both of a hole-transporting material and an electron-transporting material can be used. Further, a bipolar material or a TADF material may be used as the one or more organic compounds.

[0177] The light-emitting layer 283 preferably has, for example, a phosphorescent material and a hole-transporting material and an electron-transporting material which are a combination likely to form an exciplex. By adopting such a configuration, light emission using ExTET (Exciplex-Triplet Energy Transfer), which is energy transfer from the exciplex to the light-emitting substance (phosphorescent material), can be efficiently obtained. By selecting a combination that forms an exciplex that exhibits light emission overlapping the wavelength of the absorption band on the lowest energy side of the light-emitting substance, energy transfer becomes smooth and light emission can be efficiently obtained. With this configuration, high efficiency, low-voltage driving, and long life of the light-emitting element can be realized simultaneously.

[0178] As the combination of materials that form an exciplex, it is preferable that the HOMO level (highest occupied orbital level) of the hole-transporting material is a value equal to or higher than the HOMO level of the electron-transporting material. It is preferable that the LUMO level (lowest unoccupied orbital level) of the hole-transporting material is a value equal to or higher than the LUMO level of the electron-transporting material. The LUMO level and HOMO level of the material can be derived from the electrochemical characteristics (reduction potential and oxidation potential) of the material measured by cyclic voltammetry (CV) measurement.

[0179] The formation of an exciplex can be confirmed, for example, by comparing the emission spectra of a hole-transporting material, an electron-transporting material, and a mixed film obtained by mixing these materials, and observing the phenomenon that the emission spectrum of the mixed film is shifted to a longer wavelength (or has a new peak on the longer wavelength side) than the emission spectra of the respective materials. Alternatively, the transient photoluminescence (PL) of a hole-transporting material, the transient PL of an electron-transporting material, and the transient PL of a mixed film obtained by mixing these materials are compared, and the difference in transient response such that the transient PL lifetime of the mixed film has a longer lifetime component or the ratio of the delayed component is increased is observed to confirm the formation of the exciplex. Further, the above-mentioned transient PL may be read as transient electroluminescence (EL). That is, the transient EL of a hole-transporting material, the transient EL of a material having electron-transporting properties, and the transient EL of a mixed film thereof are compared, and the formation of the exciplex can also be confirmed by observing the difference in transient response.

[0180] The active layer 273 contains a semiconductor. Examples of the semiconductor include inorganic semiconductors such as silicon and organic semiconductors containing organic compounds. In the present embodiment, an example in which an organic semiconductor is used as the semiconductor included in the active layer 273 is shown. By using an organic semiconductor, the light-emitting layer 283 and the active layer 273 can be formed by the same method (for example, vacuum evaporation method), and it is preferable because the manufacturing apparatus can be shared.

[0181] Examples of the material of the n-type semiconductor included in the active layer 273 include fullerenes (for example, C 60 、C 70Examples thereof include electron-accepting organic semiconductor materials such as fullerenes and fullerene derivatives. Fullerene has a soccer ball-like shape, and this shape is energetically stable. Fullerene has deep (low) HOMO and LUMO levels. Because the LUMO level of fullerene is deep, its electron-accepting (acceptor) property is extremely high. Usually, when π-electron conjugation (resonance) spreads in a plane like benzene, the electron-donating (donor) property increases. However, since fullerene has a spherical shape, despite the large spread of π electrons, its electron-accepting property is high. A high electron-accepting property is beneficial as a light-receiving element because it enables efficient and rapid charge separation. C 60 、C 70 Both have broad absorption bands in the visible light region. In particular, C 70 はC 60 is preferable because it has a larger π-electron conjugate system and a broad absorption band even in the long wavelength region compared to C

[0182] In addition, examples of the n-type semiconductor material include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, quinone derivatives, and the like.

[0183] Examples of the p-type semiconductor material included in the active layer 273 include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), and quinacridone.

[0184] Examples of the p-type semiconductor material include carbazole derivatives, thiophene derivatives, furan derivatives, compounds having an aromatic amine skeleton, and the like. Further, examples of the p-type semiconductor material include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, polyphenylene vinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, polythiophene derivatives, and the like.

[0185] The HOMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the HOMO level of the electron-accepting organic semiconductor material. The LUMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.

[0186] As the electron-accepting organic semiconductor material, it is preferable to use spherical fullerenes, and as the electron-donating organic semiconductor material, it is preferable to use an organic semiconductor material having a shape close to a plane. Molecules with similar shapes tend to aggregate easily. When the same type of molecules aggregate, the energy levels of the molecular orbitals are close to each other, so that the carrier transport property can be enhanced.

[0187] For example, the active layer 273 is preferably formed by co-evaporating an n-type semiconductor and a p-type semiconductor.

[0188] Either a low molecular weight compound or a high molecular weight compound can be used for the light-emitting element and the light-receiving element, and an inorganic compound may be included. The layers constituting the light-emitting element and the light-receiving element can be formed by methods such as a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an inkjet method, and a coating method, respectively.

[0189] The display device 280B shown in Fig. 12B is different from the display device 280A in that the light receiving element 270PD and the light emitting element 270R have the same configuration.

[0190] The light receiving element 270PD and the light emitting element 270R commonly have the active layer 273 and the light emitting layer 283R.

[0191] Here, it is preferable that the light receiving element 270PD has the same configuration as a light emitting element that emits light with a longer wavelength than the light to be detected. For example, the light receiving element 270PD configured to detect blue light can have the same configuration as one or both of the light emitting element 270R and the light emitting element 270G. For example, the light receiving element 270PD configured to detect green light can have the same configuration as the light emitting element 270R.

[0192] By making the light receiving element 270PD and the light emitting element 270R have the same configuration, the number of film formation steps and the number of masks can be reduced compared to a configuration in which the light receiving element 270PD and the light emitting element 270R have layers that are made separately from each other. Therefore, the manufacturing process and manufacturing cost of the display device can be reduced.

[0193] Also, by making the light receiving element 270PD and the light emitting element 270R have the same configuration, the margin for misalignment can be narrowed compared to a configuration in which the light receiving element 270PD and the light emitting element 270R have layers that are made separately from each other. As a result, the aperture ratio of the pixel can be increased, and the light extraction efficiency of the display device can be increased. Thereby, the lifespan of the light emitting element can be extended. Also, the display device can exhibit high brightness. Also, high definition of the display device is possible.

[0194] The light-emitting layer 283R has a light-emitting material that emits red light. The active layer 273 has an organic compound that absorbs light with a shorter wavelength than red light (for example, one or both of green light and blue light). The active layer 273 preferably has an organic compound that is less likely to absorb red light and absorbs light with a shorter wavelength than red light. As a result, red light is efficiently extracted from the light-emitting element 270R, and the light-receiving element 270PD can detect light with a shorter wavelength than red light with high accuracy.

[0195] In addition, in the display device 280B, an example is shown in which the light-emitting element 270R and the light-receiving element 270PD have the same configuration, but the light-emitting element 270R and the light-receiving element 270PD may each have an optical adjustment layer with a different thickness.

[0196] The display device 280C shown in FIGS. 13A and 13B has a light-emitting and light-receiving element 270R·PD that emits red (R) light and has a light-receiving function, a light-emitting element 270G that emits green (G) light, and a light-emitting element 270B that emits blue (B) light.

[0197] Each light-emitting element has a pixel electrode 271, a hole injection layer 281, a hole transport layer 282, a light-emitting layer, an electron transport layer 284, an electron injection layer 285, and a common electrode 275 laminated in this order. The light-emitting element 270G has a light-emitting layer 283G, and the light-emitting element 270B has a light-emitting layer 283B. The light-emitting layer 283G has a light-emitting substance that emits green light, and the light-emitting layer 283B has a light-emitting substance that emits blue light.

[0198] The light-emitting and light-receiving element 270R·PD has a pixel electrode 271, a hole injection layer 281, a hole transport layer 282, an active layer 273, a light-emitting layer 283R, an electron transport layer 284, an electron injection layer 285, and a common electrode 275 laminated in this order.

[0199] Note that the light-emitting and light-receiving elements 270R·PD of the display device 280C have the same configuration as the light-emitting element 270R and the light-receiving element 270PD of the display device 280B. Also, the light-emitting elements 270G and 270B of the display device 280C have the same configuration as the light-emitting elements 270G and 270B of the display device 280B.

[0200] In FIG. 13A, a case where the light-emitting and light-receiving element 270R·PD functions as a light-emitting element is shown. In FIG. 13A, an example is shown in which the light-emitting element 270B emits blue light, the light-emitting element 270G emits green light, and the light-emitting and light-receiving element 270R·PD emits red light.

[0201] In FIG. 13B, a case where the light-emitting and light-receiving element 270R·PD functions as a light-receiving element is shown. In FIG. 13B, an example is shown in which the light-emitting and light-receiving element 270R·PD detects the blue light emitted by the light-emitting element 270B and the green light emitted by the light-emitting element 270G.

[0202] The light-emitting element 270B, the light-emitting element 270G, and the light-emitting and light-receiving element 270R·PD each have a pixel electrode 271 and a common electrode 275. In the present embodiment, a case where the pixel electrode 271 functions as an anode and the common electrode 275 functions as a cathode will be described as an example.

[0203] In the present embodiment, similar to the light-emitting element, it will be described that in the light-emitting and light-receiving element 270R·PD as well, the pixel electrode 271 functions as an anode and the common electrode 275 functions as a cathode. That is, the light-emitting and light-receiving element 270R·PD can detect the light incident on the light-emitting and light-receiving element 270R·PD, generate charges, and extract them as a current by applying a reverse bias between the pixel electrode 271 and the common electrode 275 and driving it.

[0204] Note that the light-emitting and light-receiving element 270R·PD shown in FIGS. 13A and 13B can be configured by adding an active layer 273 to the light-emitting element. That is, by simply adding a step of forming the active layer 273 to the manufacturing process of the light-emitting element, the light-emitting and light-receiving element 270R·PD can be formed in parallel with the formation of the light-emitting element. Further, the light-emitting element and the light-receiving element can be formed on the same substrate. Therefore, one or both of the imaging function and the sensing function can be imparted to the display unit without significantly increasing the manufacturing process.

[0205] Note that the stacking order of the light-emitting layer 283R and the active layer 273 is not limited. FIGS. 13A and 13B show an example in which the active layer 273 is provided on the hole transport layer 282 and the light-emitting layer 283R is provided on the active layer 273. The light-emitting layer 283R may be provided on the hole transport layer 282 and the active layer 273 may be provided on the light-emitting layer 283R.

[0206] As shown in FIGS. 13A and 13B, the active layer 273 and the light-emitting layer 283R may be in contact with each other. Further, a buffer layer may be sandwiched between the active layer 273 and the light-emitting layer 283R. As the buffer layer, at least one layer among a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a hole blocking layer, and an electron blocking layer can be used.

[0207] By providing a buffer layer between the active layer 273 and the light-emitting layer 283R, it is possible to suppress the transfer of excitation energy from the light-emitting layer 283R to the active layer 273. Further, the optical path length (cavity length) of the microcavity structure can also be adjusted using the buffer layer. Therefore, a high luminous efficiency can be obtained from the light-emitting and light-receiving element having a buffer layer between the active layer 273 and the light-emitting layer 283R.

[0208] Further, the light-emitting and light-receiving element may not have at least one layer among the hole injection layer 281, the hole transport layer 282, the electron transport layer 284, and the electron injection layer 285. Further, the light-emitting and light-receiving element may have other functional layers such as a hole blocking layer and an electron blocking layer.

[0209] Further, the light-emitting and light-receiving element may not have the active layer 273 and the light-emitting layer 283R, and may have a layer that serves as both a light-emitting layer and an active layer. As the layer that serves as both a light-emitting layer and an active layer, for example, a layer containing three materials, namely, an n-type semiconductor that can be used for the active layer 273, a p-type semiconductor that can be used for the active layer 273, and a light-emitting substance that can be used for the light-emitting layer 283R, can be used.

[0210] Note that it is preferable that the absorption band on the lowest energy side of the absorption spectrum of the mixed material of the n-type semiconductor and the p-type semiconductor does not overlap with the maximum peak of the emission spectrum (PL spectrum) of the light-emitting substance, and it is more preferable that they are sufficiently separated.

[0211] In the light-emitting and light-receiving element, a conductive film that transmits visible light is used for the electrode on the side where light is extracted. Also, it is preferable to use a conductive film that reflects visible light for the electrode on the side where light is not extracted.

[0212] Since the functions and materials of each layer constituting the light-emitting and light-receiving element are the same as those of each layer constituting the light-emitting element and the light-receiving element, detailed description thereof is omitted.

[0213] Hereinafter, with reference to FIGS. 14 and 15, the detailed configuration of a display device according to an aspect of the present invention will be described.

[0214] [Display device 100A] FIG. 14A shows a cross-sectional view of the display device 100A.

[0215] The display device 100A includes a light-receiving element 110 and a light-emitting element 190.

[0216] The light-emitting element 190 has a pixel electrode 191, a buffer layer 192, a light-emitting layer 193, a buffer layer 194, and a common electrode 115 laminated in this order. The buffer layer 192 can have one or both of a hole injection layer and a hole transport layer. The light-emitting layer 193 has an organic compound. The buffer layer 194 can have one or both of an electron injection layer and an electron transport layer. The light-emitting element 190 has a function of emitting visible light 121. Note that the display device 100A may further include a light-emitting element having a function of emitting infrared light.

[0217] The light-receiving element 110 has a pixel electrode 191, a buffer layer 182, an active layer 183, a buffer layer 184, and a common electrode 115 laminated in this order. The buffer layer 182 can have a hole transport layer. The active layer 183 has an organic compound. The buffer layer 184 can have an electron transport layer. The light-receiving element 110 has a function of detecting visible light. Note that the light-receiving element 110 may further have a function of detecting infrared light.

[0218] In the present embodiment, in both the light-emitting element 190 and the light-receiving element 110, the pixel electrode 191 functions as an anode, and the common electrode 115 functions as a cathode. That is, by driving the light-receiving element 110 with a reverse bias applied between the pixel electrode 191 and the common electrode 115, the display device 100A can detect the light incident on the light-receiving element 110, generate charges, and extract them as a current.

[0219] The pixel electrode 191, the buffer layer 182, the buffer layer 192, the active layer 183, the light-emitting layer 193, the buffer layer 184, the buffer layer 194, and the common electrode 115 may each have a single-layer structure or a laminated structure.

[0220] The pixel electrode 191 is located on the insulating layer 214. Each pixel electrode 191 can be formed of the same material and in the same process. The end of the pixel electrode 191 is covered by the partition wall 216. Two adjacent pixel electrodes 191 are electrically insulated (also referred to as electrically separated) from each other by the partition wall 216.

[0221] As the partition wall 216, an organic insulating film is suitable. Examples of materials that can be used for the organic insulating film include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimide amide resin, siloxane resin, benzocyclobutene-based resin, phenol resin, and precursors of these resins. The partition wall 216 is a layer that transmits visible light. Instead of the partition wall 216, a partition wall that blocks visible light may be provided.

[0222] The common electrode 115 is a layer that is commonly used for the light receiving element 110 and the light emitting element 190.

[0223] The materials, film thicknesses, etc. of the pair of electrodes of the light receiving element 110 and the light emitting element 190 can be made equal. Thereby, the manufacturing cost of the display device can be reduced and the manufacturing process can be simplified.

[0224] The display device 100A has a light receiving element 110, a light emitting element 190, a transistor 131, a transistor 132, etc. between a pair of substrates (substrate 151 and substrate 152).

[0225] In the light receiving element 110, the buffer layer 182, the active layer 183, and the buffer layer 184 located between the pixel electrode 191 and the common electrode 115, respectively, can also be referred to as organic layers (layers containing organic compounds). The pixel electrode 191 preferably has a function of reflecting visible light. The common electrode 115 has a function of transmitting visible light. When the light receiving element 110 is configured to detect infrared light, the common electrode 115 has a function of transmitting infrared light. Further, the pixel electrode 191 preferably has a function of reflecting infrared light.

[0226] The light-receiving element 110 has a function of detecting light. Specifically, the light-receiving element 110 is a photoelectric conversion element that receives the light 122 incident from outside the display device 100A and converts it into an electrical signal. The light 122 can also be the light reflected by the object from the light emitted by the light-emitting element 190. Further, the light 122 may be incident on the light-receiving element 110 through a lens or the like provided in the display device 100A.

[0227] In the light-emitting element 190, the buffer layer 192, the light-emitting layer 193, and the buffer layer 194, which are respectively located between the pixel electrode 191 and the common electrode 115, can also be collectively referred to as the EL layer. Note that the EL layer has at least the light-emitting layer 193. As described above, it is preferable that the pixel electrode 191 has a function of reflecting visible light. Also, the common electrode 115 has a function of transmitting visible light. Note that when the display device 100A has a configuration including a light-emitting element that emits infrared light, the common electrode 115 has a function of transmitting infrared light. Further, it is preferable that the pixel electrode 191 has a function of reflecting infrared light.

[0228] It is preferable that a microcavity structure is applied to the light-emitting element included in the display device of the present embodiment.

[0229] The buffer layer 192 or the buffer layer 194 may have a function as an optical adjustment layer. By varying the film thickness of the buffer layer 192 or the buffer layer 194, it is possible to enhance and extract light of a specific color in each light-emitting element.

[0230] The light-emitting element 190 has a function of emitting visible light. Specifically, the light-emitting element 190 is an electroluminescent element that emits light toward the substrate 152 side by applying a voltage between the pixel electrode 191 and the common electrode 115 (see visible light 121).

[0231] The pixel electrode 191 included in the light-receiving element 110 is electrically connected to the source or drain of the transistor 131 through an opening provided in the insulating layer 214.

[0232] The pixel electrode 191 of the light-emitting element 190 is electrically connected to the source or drain of the transistor 132 through an opening provided in the insulating layer 214.

[0233] The transistor 131 and the transistor 132 are in contact with each other on the same layer (substrate 151 in FIG. 14A).

[0234] At least a part of the circuit electrically connected to the light-receiving element 110 is preferably formed of the same material and in the same process as the circuit electrically connected to the light-emitting element 190. Thereby, compared with the case where the two circuits are formed separately, the thickness of the display device can be reduced and the manufacturing process can be simplified.

[0235] The light-receiving element 110 and the light-emitting element 190 are each preferably covered with a protective layer 116. In FIG. 14A, the protective layer 116 is provided in contact with the common electrode 115. By providing the protective layer 116, it is possible to suppress impurities such as water from entering the light-receiving element 110 and the light-emitting element 190, and improve the reliability of the light-receiving element 110 and the light-emitting element 190. Further, the protective layer 116 and the substrate 152 are bonded together by an adhesive layer 142.

[0236] A light-shielding layer 158 is provided on the surface of the substrate 152 on the side of the substrate 151. The light-shielding layer 158 has openings at positions overlapping the light-emitting element 190 and at positions overlapping the light-receiving element 110.

[0237] Here, the light receiving element 110 detects the light reflected by the object from the light emission of the light emitting element 190. However, there are cases where the light emitted from the light emitting element 190 is reflected within the display device 100A and enters the light receiving element 110 without passing through the object. The light shielding layer 158 can suppress the influence of such stray light. For example, when the light shielding layer 158 is not provided, the light 123 emitted from the light emitting element 190 may be reflected by the substrate 152, and the reflected light 124 may enter the light receiving element 110. By providing the light shielding layer 158, it is possible to suppress the reflected light 124 from entering the light receiving element 110. Thereby, noise can be reduced and the sensitivity of the sensor using the light receiving element 110 can be increased.

[0238] As the light shielding layer 158, a material that blocks the light emission from the light emitting element can be used. The light shielding layer 158 preferably absorbs visible light. As the light shielding layer 158, for example, a black matrix can be formed using a metal material, or a resin material containing a pigment (such as carbon black) or a dye. The light shielding layer 158 may have a laminated structure of a red color filter, a green color filter, and a blue color filter.

[0239] [Display device 100B] FIG. 14B and FIG. 14C show cross-sectional views of the display device 100B. In the following description of the display device, the description of the same configuration as the previously described display device may be omitted.

[0240] The display device 100B includes a light emitting element 190B, a light emitting element 190G, and a light emitting and receiving element 190R·PD.

[0241] The light emitting element 190B has a pixel electrode 191, a buffer layer 192B, a light emitting layer 193B, a buffer layer 194B, and a common electrode 115 laminated in this order. The light emitting element 190B has a function of emitting blue light 121B.

[0242] The light-emitting element 190G has a pixel electrode 191, a buffer layer 192G, a light-emitting layer 193G, a buffer layer 194G, and a common electrode 115 laminated in this order. The light-emitting element 190G has a function of emitting green light 121G.

[0243] The light-emitting and light-receiving element 190R·PD has a pixel electrode 191, a buffer layer 192R, an active layer 183, a light-emitting layer 193R, a buffer layer 194R, and a common electrode 115 laminated in this order. The light-emitting and light-receiving element 190R·PD has a function of emitting red light 121R and a function of detecting light 122.

[0244] FIG. 14B shows a case where the light-emitting and light-receiving element 190R·PD functions as a light-emitting element. FIG. 14B shows an example in which the light-emitting element 190B emits blue light, the light-emitting element 190G emits green light, and the light-emitting and light-receiving element 190R·PD emits red light.

[0245] FIG. 14C shows a case where the light-emitting and light-receiving element 190R·PD functions as a light-receiving element. FIG. 14C shows an example in which the light-emitting and light-receiving element 190R·PD detects blue light emitted by the light-emitting element 190B and green light emitted by the light-emitting element 190G.

[0246] The display device 100B has a light-emitting and light-receiving element 190R·PD, a light-emitting element 190G, a light-emitting element 190B, a transistor 132, etc. between a pair of substrates (substrate 151 and substrate 152).

[0247] The pixel electrode 191 is located on the insulating layer 214. Two adjacent pixel electrodes 191 are electrically insulated from each other by a partition wall 216. The pixel electrode 191 is electrically connected to the source or drain of the transistor 132 through an opening provided in the insulating layer 214.

[0248] The light-emitting and light-receiving element and the light-emitting element are preferably each covered with a protective layer 116. Further, the protective layer 116 and the substrate 152 are bonded together by an adhesive layer 142. A light-shielding layer 158 is provided on the surface of the substrate 152 on the side of the substrate 151.

[0249] [Display device 100C] FIG. 15A shows a cross-sectional view of the display device 100C.

[0250] The display device 100C includes a light-receiving element 110 and a light-emitting element 190.

[0251] The light-emitting element 190 includes a pixel electrode 191, a common layer 112, a light-emitting layer 193, a common layer 114, and a common electrode 115 in this order. The common layer 112 can include one or both of a hole injection layer and a hole transport layer. The light-emitting layer 193 includes an organic compound. The common layer 114 can include one or both of an electron injection layer and an electron transport layer. The light-emitting element 190 has a function of emitting visible light. Note that the display device 100C may further include a light-emitting element having a function of emitting infrared light.

[0252] The light-receiving element 110 includes a pixel electrode 191, a common layer 112, an active layer 183, a common layer 114, and a common electrode 115 laminated in this order. The active layer 183 includes an organic compound. The light-receiving element 110 has a function of detecting visible light. Note that the light-receiving element 110 may further have a function of detecting infrared light.

[0253] The pixel electrode 191, the common layer 112, the active layer 183, the light-emitting layer 193, the common layer 114, and the common electrode 115 may each have a single-layer structure or a laminated structure.

[0254] The pixel electrode 191 is located on the insulating layer 214. Two adjacent pixel electrodes 191 are electrically insulated from each other by a partition wall 216. The pixel electrode 191 is electrically connected to the source or drain of the transistor 132 through an opening provided in the insulating layer 214.

[0255] The common layer 112, the common layer 114, and the common electrode 115 are layers commonly used for the light receiving element 110 and the light emitting element 190. It is preferable to make at least a part of the layers constituting the light receiving element 110 and the light emitting element 190 have a common configuration, as this can reduce the manufacturing process of the display device.

[0256] The display device 100C has a light receiving element 110, a light emitting element 190, a transistor 131, a transistor 132, etc. between a pair of substrates (substrate 151 and substrate 152).

[0257] The light receiving element 110 and the light emitting element 190 are each preferably covered with a protective layer 116. Also, the protective layer 116 and the substrate 152 are bonded together by an adhesive layer 142.

[0258] A resin layer 159 is provided on the surface of the substrate 152 on the side of the substrate 151. The resin layer 159 is provided at a position overlapping the light emitting element 190 and is not provided at a position overlapping the light receiving element 110.

[0259] The resin layer 159 can be configured, for example, as shown in FIG. 15B, to be provided at a position overlapping the light emitting element 190 and to have an opening 159p at a position overlapping the light receiving element 110. Or, the resin layer 159 can be configured, for example, as shown in FIG. 15C, to be provided in an island shape at a position overlapping the light emitting element 190 and not to be provided at a position overlapping the light receiving element 110.

[0260] A light shielding layer 158 is provided on the surface of the substrate 152 on the side of the substrate 151 and on the surface of the resin layer 159 on the side of the substrate 151. The light shielding layer 158 has openings at positions overlapping the light emitting element 190 and at positions overlapping the light receiving element 110.

[0261] Here, the light receiving element 110 detects the light reflected by the object from the light emission of the light emitting element 190. However, the light emitted from the light emitting element 190 may be reflected within the display device 100C and incident on the light receiving element 110 without passing through the object. The light shielding layer 158 can absorb such stray light and reduce the stray light incident on the light receiving element 110. For example, the light shielding layer 158 can absorb the stray light 123a reflected from the surface of the substrate 151 on the substrate 152 side through the resin layer 159. Further, the light shielding layer 158 can absorb the stray light 123b before reaching the resin layer 159. Thereby, the stray light incident on the light receiving element 110 can be reduced. Therefore, noise can be reduced and the sensitivity of the sensor using the light receiving element 110 can be enhanced. In particular, it is preferable that the light shielding layer 158 is located close to the light emitting element 190 because the stray light can be further reduced. Also, when the light shielding layer 158 is located close to the light emitting element 190, the viewing angle dependency of the display can be suppressed, which is also preferable from the viewpoint of improving the display quality.

[0262] Also, by providing the light shielding layer 158, the range in which the light receiving element 110 detects light can be controlled. When the light shielding layer 158 is located far from the light receiving element 110, the imaging range becomes narrow and the imaging resolution can be enhanced.

[0263] When the resin layer 159 has an opening, it is preferable that the light shielding layer 158 covers at least a part of the opening and at least a part of the side surface of the resin layer 159 exposed at the opening.

[0264] When the resin layer 159 is provided in an island shape, it is preferable that the light shielding layer 158 covers at least a part of the side surface of the resin layer 159.

[0265] Thus, since the light-shielding layer 158 is provided along the shape of the resin layer 159, the distance from the light-shielding layer 158 to the light-emitting element 190 (specifically, the light-emitting region of the light-emitting element 190) is shorter than the distance from the light-shielding layer 158 to the light-receiving element 110 (specifically, the light-receiving region of the light-receiving element 110). As a result, it is possible to reduce the noise of the sensor, increase the resolution of imaging, and suppress the viewing angle dependency of display. Therefore, both the display quality and the imaging quality in the display device can be improved.

[0266] The resin layer 159 is a layer that transmits the light emitted by the light-emitting element 190. Examples of the material of the resin layer 159 include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimide amide resin, siloxane resin, benzocyclobutene-based resin, phenol resin, and precursors of these resins. Note that the structure provided between the substrate 152 and the light-shielding layer 158 is not limited to a resin layer, and an inorganic insulating film or the like may be used. The greater the thickness of the structure, the greater the difference between the distance from the light-shielding layer to the light-receiving element and the distance from the light-shielding layer to the light-emitting element. Since an organic insulating film such as resin can be easily formed thick, it is suitable as the structure.

[0267] In order to compare the distance from the light-shielding layer 158 to the light-receiving element 110 and the distance from the light-shielding layer 158 to the light-emitting element 190, for example, the shortest distance L1 from the end of the light-shielding layer 158 on the light-receiving element 110 side to the common electrode 115 and the shortest distance L2 from the end of the light-shielding layer 158 on the light-emitting element 190 side to the common electrode 115 can be used. By making the shortest distance L2 shorter than the shortest distance L1, stray light from the light-emitting element 190 can be suppressed, and the sensitivity of the sensor using the light-receiving element 110 can be increased. In addition, the viewing angle dependency of the display can be suppressed. By making the shortest distance L1 longer than the shortest distance L2, the imaging range of the light-receiving element 110 can be narrowed, and the resolution of imaging can be increased.

[0268] Also, by making the portion of the adhesive layer 142 that overlaps the light-receiving element 110 thicker than the portion that overlaps the light-emitting element 190, a difference can be created between the distance from the light-shielding layer 158 to the light-receiving element 110 and the distance from the light-shielding layer 158 to the light-emitting element 190.

[0269] Hereinafter, with reference to FIGS. 16 to 19, a more detailed configuration of the display device according to one aspect of the present invention will be described.

[0270] [Display device 100D] FIG. 16 shows a perspective view of the display device 100D, and FIG. 17 shows a cross-sectional view of the display device 100D.

[0271] The display device 100D has a configuration in which a substrate 152 and a substrate 151 are bonded together. In FIG. 16, the substrate 152 is indicated by a dashed line.

[0272] The display device 100D includes a display unit 162, a circuit 164, a wiring 165, etc. FIG. 16 shows an example in which an IC 173 and an FPC 172 are mounted on the display device 100D. Therefore, the configuration shown in FIG. 16 can also be referred to as a display module having the display device 100D, an IC (integrated circuit), and an FPC (flexible printed circuit board).

[0273] As the circuit 164, for example, a scanning line driving circuit can be used.

[0274] The wiring 165 has a function of supplying signals and power to the display unit 162 and the circuit 164. The signals and power are input to the wiring 165 from the outside via the FPC 172 or from the IC 173.

[0275] FIG. 16 shows an example in which an IC 173 is provided on a substrate 151 by a COG (Chip On Glass) method, a COF (Chip On Film) method, or the like. As the IC 173, for example, an IC having a scanning line driving circuit, a signal line driving circuit, or the like can be applied. Note that the display device 100D and the display module may be configured not to include an IC. Further, the IC may be mounted on an FPC by a COF method or the like.

[0276] FIG. 17 shows an example of a cross section when a part of the region including the FPC 172, a part of the region including the circuit 164, a part of the region including the display unit 162, and a part of the region including the end portion of the display device 100D shown in FIG. 16 are each cut.

[0277] The display device 100D shown in FIG. 17 includes a transistor 241, a transistor 245, a transistor 246, a transistor 247, a light-emitting element 190B, a light-emitting element 190G, a light-receiving and light-emitting element 190R·PD, etc. between a substrate 151 and a substrate 152.

[0278] The substrate 152 and the protective layer 116 are bonded together by an adhesive layer 142. For sealing the light-emitting element 190B, the light-emitting element 190G, and the light-receiving and light-emitting element 190R·PD, a solid sealing structure, a hollow sealing structure, or the like can be applied. In FIG. 17, the space surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 is sealed by the adhesive layer 142, and a solid sealing structure is applied.

[0279] The light-emitting element 190B has a stacked structure in which a pixel electrode 191, a common layer 112, a light-emitting layer 193B, a common layer 114, and a common electrode 115 are stacked in this order from the insulating layer 214 side. The pixel electrode 191 is connected to a conductive layer 222b included in the transistor 247 through an opening provided in the insulating layer 214. The transistor 247 has a function of controlling driving of the light-emitting element 190B. An end portion of the pixel electrode 191 is covered by a partition wall 216. The pixel electrode 191 includes a material that reflects visible light, and the common electrode 115 includes a material that transmits visible light.

[0280] The light-emitting element 190G has a stacked structure in which a pixel electrode 191, a common layer 112, a light-emitting layer 193G, a common layer 114, and a common electrode 115 are stacked in this order from the insulating layer 214 side. The pixel electrode 191 is connected to a conductive layer 222b included in the transistor 246 through an opening provided in the insulating layer 214. The transistor 246 has a function of controlling the driving of the light-emitting element 190G.

[0281] The light-emitting and light-receiving element 190R·PD has a stacked structure in which a pixel electrode 191, a common layer 112, an active layer 183, a light-emitting layer 193R, a common layer 114, and a common electrode 115 are stacked in this order from the insulating layer 214 side. The pixel electrode 191 is electrically connected to a conductive layer 222b included in the transistor 245 through an opening provided in the insulating layer 214. The transistor 245 has a function of controlling the driving of the light-emitting and light-receiving element 190R·PD.

[0282] The light emitted from the light-emitting element 190B, the light-emitting element 190G, and the light-emitting and light-receiving element 190R·PD is emitted toward the substrate 152 side. Further, light enters the light-emitting and light-receiving element 190R·PD through the substrate 152 and the adhesive layer 142. It is preferable to use a material having high transmittance for visible light for the substrate 152 and the adhesive layer 142.

[0283] The pixel electrodes 191 included in the light-emitting element 190B, the light-emitting element 190G, and the light-emitting and light-receiving element 190R·PD can be manufactured using the same material and the same process. The common layer 112, the common layer 114, and the common electrode 115 are used in common for the light-emitting element 190B, the light-emitting element 190G, and the light-emitting and light-receiving element 190R·PD. The light-emitting and light-receiving element 190R·PD has a configuration in which an active layer 183 is added to the configuration of a light-emitting element that emits red light. Further, the light-emitting element 190B, the light-emitting element 190G, and the light-emitting and light-receiving element 190R·PD can have the same configuration except that the configurations of the active layer 183 and the light-emitting layers 193 of each color are different. Thereby, a light-receiving function can be added to the display unit 162 of the display device 100D without significantly increasing the manufacturing process.

[0284] On the surface of the substrate 152 on the side of the substrate 151, a light-shielding layer 158 is provided. The light-shielding layer 158 has openings at positions overlapping with each of the light-emitting element 190B, the light-emitting element 190G, and the light-receiving and emitting element 190R·PD. By providing the light-shielding layer 158, the range in which the light-receiving and emitting element 190R·PD detects light can be controlled. As described above, it is preferable to control the light incident on the light-receiving and emitting element by adjusting the position of the opening of the light-shielding layer provided at the position overlapping with the light-receiving and emitting element 190R·PD. Further, by having the light-shielding layer 158, it is possible to suppress light from directly entering from the light-emitting element 190 into the light-receiving and emitting element 190R·PD without passing through an object. Therefore, a sensor with less noise and high sensitivity can be realized.

[0285] The transistors 241, 245, 246, and 247 are all formed on the substrate 151. These transistors can be manufactured by the same material and the same process.

[0286] On the substrate 151, an insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided in this order. A part of the insulating layer 211 functions as a gate insulating layer for each transistor. A part of the insulating layer 213 functions as a gate insulating layer for each transistor. The insulating layer 215 is provided to cover the transistors. The insulating layer 214 is provided to cover the transistors and has a function as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistors are not limited, and each may be a single layer or two or more layers.

[0287] It is preferable to use a material in which impurities such as water and hydrogen hardly diffuse in at least one of the insulating layers covering the transistors. Thereby, the insulating layer can function as a barrier layer. With such a configuration, it is possible to effectively suppress the diffusion of impurities from the outside into the transistors and improve the reliability of the display device.

[0288] As the insulating layers 211, 213, and 215, it is preferable to use inorganic insulating films respectively. As the inorganic insulating film, for example, a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, an aluminum nitride film, etc. can be used. Further, a hafnium oxide film, a hafnium oxynitride film, a hafnium nitride oxide film, a yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film, etc. may be used. Further, two or more of the above insulating films may be laminated and used. Note that an underlayer film may be provided between the substrate 151 and the transistor. The above inorganic insulating film can also be used for the underlayer film.

[0289] Here, the organic insulating film often has lower barrier properties than the inorganic insulating film. Therefore, the organic insulating film preferably has an opening near the end of the display device 100D. Thereby, it is possible to suppress impurities from entering from the end of the display device 100D through the organic insulating film. Alternatively, the organic insulating film may be formed such that the end of the organic insulating film is inside the end of the display device 100D so that the organic insulating film is not exposed at the end of the display device 100D.

[0290] An organic insulating film is suitable for the insulating layer 214 that functions as a planarization layer. Examples of the material that can be used for the organic insulating film include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimide amide resin, siloxane resin, benzocyclobutene-based resin, phenol resin, and precursors of these resins.

[0291] By providing the protective layer 116 that covers the light-emitting element 190B, the light-emitting element 190G, and the light-receiving and light-emitting element 190R·PD, it is possible to suppress impurities such as water from entering the light-emitting element 190B, the light-emitting element 190G, and the light-receiving and light-emitting element 190R·PD, and improve the reliability of the light-emitting element 190B, the light-emitting element 190G, and the light-receiving and light-emitting element 190R·PD.

[0292] In the region 228 shown in FIG. 17, an opening is formed in the insulating layer 214. Thereby, even when an organic insulating film is used for the insulating layer 214, it is possible to suppress impurities from entering the display unit 162 from the outside through the insulating layer 214. Therefore, the reliability of the display device 100D can be improved.

[0293] In the region 228 near the end of the display device 100D, it is preferable that the insulating layer 215 and the protective layer 116 are in contact with each other through the opening of the insulating layer 214. In particular, it is preferable that the inorganic insulating film of the insulating layer 215 and the inorganic insulating film of the protective layer 116 are in contact with each other. Thereby, it is possible to suppress impurities from entering the display unit 162 from the outside through the organic insulating film. Therefore, the reliability of the display device 100D can be improved.

[0294] The protective layer 116 may be a single layer or a laminated structure. For example, the protective layer 116 may have a laminated structure of an organic insulating film and an inorganic insulating film. At this time, it is preferable that the end of the inorganic insulating film extends outside the end of the organic insulating film.

[0295] The transistors 241, 245, 246, and 247 include a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, conductive layers 222a and 222b that function as a source and a drain, a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is given to a plurality of layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0296] The structure of the transistor included in the display device according to the present embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used. Also, either a top gate type or a bottom gate type transistor structure may be used. Alternatively, gates may be provided above and below the semiconductor layer in which the channel is formed.

[0297] For transistors 241, 245, 246, and 247, a configuration in which the semiconductor layer in which the channel is formed is sandwiched between two gates is applied. The transistor may be driven by connecting the two gates and supplying the same signal thereto. Alternatively, the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and a potential for driving to the other.

[0298] The crystallinity of the semiconductor material used for the transistor is also not particularly limited, and any of an amorphous semiconductor, a semiconductor having crystallinity (microcrystalline semiconductor, polycrystalline semiconductor, single crystal semiconductor, or a semiconductor having a crystal region in part) may be used. Using a semiconductor having crystallinity is preferable because deterioration of transistor characteristics can be suppressed.

[0299] The semiconductor layer of the transistor preferably includes a metal oxide (also referred to as an oxide semiconductor). Alternatively, the semiconductor layer of the transistor may include silicon. Examples of silicon include amorphous silicon, crystalline silicon (such as low-temperature polysilicon, single crystal silicon).

[0300] The semiconductor layer preferably contains, for example, indium, one or more elements M (where M is selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more elements selected from aluminum, gallium, yttrium, and tin.

[0301] In particular, as the semiconductor layer, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also referred to as IGZO).

[0302] When the semiconductor layer is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. Examples of the atomic ratio of the metal elements in such an In-M-Zn oxide include compositions such as In:M:Zn = 1:1:1 or a composition in the vicinity thereof, In:M:Zn = 1:1:1.2 or a composition in the vicinity thereof, In:M:Zn = 2:1:3 or a composition in the vicinity thereof, In:M:Zn = 3:1:2 or a composition in the vicinity thereof, In:M:Zn = 4:2:3 or a composition in the vicinity thereof, In:M:Zn = 4:2:4.1 or a composition in the vicinity thereof, In:M:Zn = 5:1:3 or a composition in the vicinity thereof, In:M:Zn = 5:1:6 or a composition in the vicinity thereof, In:M:Zn = 5:1:7 or a composition in the vicinity thereof, In:M:Zn = 5:1:8 or a composition in the vicinity thereof, In:M:Zn = 6:1:6 or a composition in the vicinity thereof, In:M:Zn = 5:2:5 or a composition in the vicinity thereof, etc. The composition in the vicinity means a range including ±30% of the desired atomic ratio.

[0303] For example, when the atomic ratio is described as In:Ga:Zn = 4:2:3 or a composition in the vicinity thereof, when the atomic ratio of In is 4, it includes cases where the atomic ratio of Ga is 1 or more and 3 or less, and the atomic ratio of Zn is 2 or more and 4 or less. Further, when the atomic ratio is described as In:Ga:Zn = 5:1:6 or a composition in the vicinity thereof, when the atomic ratio of In is 5, it includes cases where the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is 5 or more and 7 or less. Further, when the atomic ratio is described as In:Ga:Zn = 1:1:1 or a composition in the vicinity thereof, when the atomic ratio of In is 1, it includes cases where the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is greater than 0.1 and 2 or less.

[0304] The transistors included in circuit 164 and the transistors included in display unit 162 may have the same structure or different structures. The structures of the plurality of transistors included in circuit 164 may all be the same or there may be two or more types. Similarly, the structures of the plurality of transistors included in display unit 162 may all be the same or there may be two or more types.

[0305] A connection portion 244 is provided in a region of substrate 151 where substrate 152 does not overlap. In connection portion 244, wiring 165 is electrically connected to FPC 172 via conductive layer 166 and connection layer 242. On the upper surface of connection portion 244, conductive layer 166 obtained by processing the same conductive film as pixel electrode 191 is exposed. Thereby, connection portion 244 and FPC 172 can be electrically connected via connection layer 242.

[0306] Various optical members can be arranged outside substrate 152. Examples of the optical members include a polarizing plate, a retardation plate, a light diffusion layer (such as a diffusion film), an antireflection layer, and a condensing film. Further, outside substrate 152, an antistatic film for suppressing the adhesion of dust, a water-repellent film for making it difficult for dirt to adhere, a hard coat film for suppressing the occurrence of scratches during use, a shock absorption layer, etc. may be arranged.

[0307] For the substrate 151 and the substrate 152, glass, quartz, ceramic, sapphire, resin, etc. can be used respectively. When using a flexible material for the substrate 151 and the substrate 152, the flexibility of the display device can be enhanced.

[0308] As the adhesive layer, various curable adhesives such as photocurable adhesives such as ultraviolet curable type, reaction curable adhesives, thermosetting adhesives, anaerobic adhesives, etc. can be used. Examples of these adhesives include epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, EVA (ethylene vinyl acetate) resin, etc. In particular, materials with low moisture permeability such as epoxy resin are preferred. Also, a two-component mixed resin may be used. Also, an adhesive sheet or the like may be used.

[0309] As the connection layer, an anisotropic conductive film (ACF: Anisotropic Conductive Film), an anisotropic conductive paste (ACP: Anisotropic Conductive Paste), etc. can be used.

[0310] For the configurations and materials of the light-emitting elements 190G, 190B, and the light-receiving and light-emitting element 190R·PD, the above descriptions can be referred to.

[0311] In addition to the gate, source, and drain of the transistor, materials that can be used for the conductive layers such as various wirings and electrodes constituting the display device include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, and alloys mainly composed of these metals. Films containing these materials can be used as a single layer or in a laminated structure.

[0312] In addition, as the conductive material having translucency, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium, or graphene can be used. Alternatively, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing the metal materials can be used. Alternatively, nitrides of the metal materials (for example, titanium nitride) may be used. When using a metal material, an alloy material (or a nitride thereof), it is preferably made thin enough to have translucency. In addition, a laminated film of the above materials can be used as the conductive layer. For example, using a laminated film of an alloy of silver and magnesium and indium tin oxide is preferable because it can enhance conductivity. These can also be used for conductive layers such as various wirings and electrodes constituting the display device, and conductive layers (conductive layers functioning as pixel electrodes and common electrodes) of light-emitting elements and light-receiving elements (or light-emitting and receiving elements).

[0313] Examples of the insulating material that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide.

[0314] [Display Device 100E] FIGS. 18 and 19A show cross-sectional views of the display device 100E. The perspective view of the display device 100E is the same as that of the display device 100D (FIG. 13). FIG. 18 shows an example of a cross-section when a part of the region including the FPC 172, a part of the circuit 164, and a part of the display unit 162 of the display device 100E are each cut. FIG. 19A shows an example of a cross-section when a part of the display unit 162 of the display device 100E is cut. In FIG. 18, an example of a cross-section when cutting a region including the light-receiving element 110 and the light-emitting element 190R that emits red light among the display units 162 is shown. In FIG. 19A, an example of a cross-section when cutting a region including the light-emitting element 190G that emits green light and the light-emitting element 190B that emits blue light among the display units 162 is shown.

[0315] The display device 100E shown in FIGS. 18 and 19A has a transistor 243, a transistor 248, a transistor 249, a transistor 240, a light-emitting element 190R, a light-emitting element 190G, a light-emitting element 190B, a light-receiving element 110, etc. between a substrate 153 and a substrate 154.

[0316] The resin layer 159 and the common electrode 115 are adhered via an adhesive layer 142, and a solid-sealing structure is applied to the display device 100E.

[0317] The substrate 153 and the insulating layer 212 are bonded by an adhesive layer 155. The substrate 154 and the insulating layer 157 are bonded by an adhesive layer 156.

[0318] As a method for manufacturing the display device 100E, first, a first manufacturing substrate provided with an insulating layer 212, each transistor, a light-receiving element 110, each light-emitting element, etc., and a second manufacturing substrate provided with an insulating layer 157, a resin layer 159, a light-shielding layer 158, etc. are bonded by an adhesive layer 142. Then, the substrate 153 is pasted on the exposed surface after peeling off the first manufacturing substrate, and the substrate 154 is pasted on the exposed surface after peeling off the second manufacturing substrate, so that each component formed on the first manufacturing substrate and the second manufacturing substrate is transferred to the substrate 153 and the substrate 154. The substrate 153 and the substrate 154 preferably each have flexibility. Thereby, the flexibility of the display device 100E can be enhanced.

[0319] For the insulating layer 212 and the insulating layer 157, an inorganic insulating film that can be used for the insulating layer 211, the insulating layer 213, and the insulating layer 215 can be used respectively.

[0320] The light-emitting element 190R has a stacked structure in which a pixel electrode 191, a common layer 112, a light-emitting layer 193R, a common layer 114, and a common electrode 115 are stacked in this order from the insulating layer 214b side. The pixel electrode 191 is connected to the conductive layer 169 through an opening provided in the insulating layer 214b. The conductive layer 169 is connected to the conductive layer 222b included in the transistor 248 through an opening provided in the insulating layer 214a. The conductive layer 222b is connected to the low-resistance region 231n through an opening provided in the insulating layer 215. That is, the pixel electrode 191 is electrically connected to the transistor 248. The transistor 248 has a function of controlling the driving of the light-emitting element 190R.

[0321] Similarly, the light-emitting element 190G has a stacked structure in which a pixel electrode 191, a common layer 112, a light-emitting layer 193G, a common layer 114, and a common electrode 115 are stacked in this order from the insulating layer 214b side. The pixel electrode 191 is electrically connected to the low-resistance region 231n of the transistor 249 through the conductive layer 169 and the conductive layer 222b of the transistor 249. That is, the pixel electrode 191 is electrically connected to the transistor 249. The transistor 249 has a function of controlling the driving of the light-emitting element 190G.

[0322] Then, the light-emitting element 190B has a stacked structure in which a pixel electrode 191, a common layer 112, a light-emitting layer 193B, a common layer 114, and a common electrode 115 are stacked in this order from the insulating layer 214b side. The pixel electrode 191 is electrically connected to the low-resistance region 231n of the transistor 240 through the conductive layer 169 and the conductive layer 222b of the transistor 240. That is, the pixel electrode 191 is electrically connected to the transistor 240. The transistor 240 has a function of controlling the driving of the light-emitting element 190B.

[0323] The light-receiving element 110 has a stacked structure in which a pixel electrode 191, a common layer 112, an active layer 183, a common layer 114, and a common electrode 115 are stacked in this order from the insulating layer 214b side.

[0324] The end portion of the pixel electrode 191 is covered by the partition wall 216. The pixel electrode 191 contains a material that reflects visible light, and the common electrode 115 contains a material that transmits visible light.

[0325] The light emitted by the light-emitting elements 190R, 190G, and 190B is emitted toward the substrate 154 side. Further, light is incident on the light-receiving element 110 through the substrate 154 and the adhesive layer 142. It is preferable to use a material having high transparency to visible light for the substrate 154.

[0326] Each pixel electrode 191 can be manufactured using the same material and the same process. The common layer 112, the common layer 114, and the common electrode 115 are commonly used for the light-receiving element 110 and the light-emitting elements 190R, 190G, and 190B. The light-receiving element 110 and the light-emitting elements of each color can have the same configuration except that the configuration of the active layer 183 and the light-emitting layer is different. Thereby, the light-receiving element 110 can be incorporated in the display device 100E without significantly increasing the manufacturing process.

[0327] On the surface of the insulating layer 157 on the substrate 153 side, a resin layer 159 and a light-shielding layer 158 are provided. The resin layer 159 is provided at a position overlapping with the light-emitting elements 190R, 190G, and 190B, and is not provided at a position overlapping with the light-receiving element 110. The light-shielding layer 158 is provided so as to cover the surface of the insulating layer 157 on the substrate 153 side, the side surface of the resin layer 159, and the surface of the resin layer 159 on the substrate 153 side. The light-shielding layer 158 has openings at positions overlapping with the light-receiving element 110 and at positions overlapping with each of the light-emitting elements 190R, 190G, and 190B. By providing the light-shielding layer 158, the range in which the light-receiving element 110 detects light can be controlled. Also, by having the light-shielding layer 158, it is possible to suppress light from directly entering the light-receiving element 110 from the light-emitting elements 190R, 190G, and 190B without passing through an object. Therefore, a sensor with less noise and high sensitivity can be realized. By providing the resin layer 159, the distance from the light-shielding layer 158 to each color light-emitting element is shorter than the distance from the light-shielding layer 158 to the light-receiving element 110. Thereby, while reducing the noise of the sensor, it is possible to suppress the viewing angle dependency of the display. Therefore, both the display quality and the imaging quality can be improved.

[0328] As shown in FIG. 18, the partition wall 216 has an opening between the light-receiving element 110 and the light-emitting element 190R. A light-shielding layer 219a is provided so as to fill the opening. The light-shielding layer 219a is located between the light-receiving element 110 and the light-emitting element 190R. The light-shielding layer 219a absorbs the light emitted by the light-emitting element 190R. Thereby, it is possible to suppress stray light incident on the light-receiving element 110.

[0329] The spacer 219b is provided on the partition wall 216 and is located between the light-emitting element 190G and the light-emitting element 190B. It is preferable that the upper surface of the spacer 219b is closer to the light-shielding layer 158 than the upper surface of the light-shielding layer 219a. For example, it is preferable that the sum of the height (thickness) of the partition wall 216 and the height (thickness) of the spacer 219b is larger than the height (thickness) of the light-shielding layer 219a. Thereby, it becomes easy to fill the adhesive layer 142. As shown in FIG. 19A, in a portion where the spacer 219b and the light-shielding layer 158 overlap, the light-shielding layer 158 may be in contact with the common electrode 115 (or the protective layer).

[0330] In the region of the substrate 153 where the substrate 154 does not overlap, a connection portion 244 is provided. In the connection portion 244, the wiring 165 is electrically connected to the FPC 172 via the conductive layer 167, the conductive layer 166, and the connection layer 242. The conductive layer 167 can be obtained by processing the same conductive film as the conductive layer 169. On the upper surface of the connection portion 244, the conductive layer 166 obtained by processing the same conductive film as the pixel electrode 191 is exposed. Thereby, the connection portion 244 and the FPC 172 can be electrically connected via the connection layer 242.

[0331] The transistors 243, 248, 249, and 240 have a semiconductor layer having a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, a channel formation region 231i, and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, an insulating layer 225 functioning as a gate insulating layer, a conductive layer 223 functioning as a gate, and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i. The insulating layer 225 is located between the conductive layer 223 and the channel formation region 231i.

[0332] The conductive layer 222a and the conductive layer 222b are each connected to the low-resistance region 231n via an opening provided in the insulating layer 215. Of the conductive layer 222a and the conductive layer 222b, one functions as a source and the other functions as a drain.

[0333] In FIGS. 18 and 19A, the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 and does not overlap with the low resistance region 231n. For example, by processing the insulating layer 225 using the conductive layer 223 as a mask, the structures shown in FIGS. 18 and 19A can be fabricated. In FIGS. 18 and 19A, an insulating layer 215 is provided to cover the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and the conductive layer 222b are respectively connected to the low resistance region 231n through the openings of the insulating layer 215. Further, an insulating layer covering the transistor may be provided on the conductive layer 222a and the conductive layer 222b.

[0334] On the other hand, in the transistor 252 shown in FIG. 19B, an example is shown in which the insulating layer 225 covers the upper surface and the side surface of the semiconductor layer. The conductive layer 222a and the conductive layer 222b are respectively connected to the low resistance region 231n through the openings provided in the insulating layer 225 and the insulating layer 215.

[0335] As described above, in the display device according to one aspect of the present invention, the difference in the distance to the light receiving elements (or light emitting and receiving elements) of the two light emitting elements and the difference in the distance to the openings of the light shielding layer overlapping with the light receiving elements (or light emitting and receiving elements) of the two light emitting elements are different from each other. With such a configuration, the light receiving element or the light emitting and receiving element can receive more light from one of the two light emitting elements than the light from the other. Therefore, for example, in the display device according to one aspect of the present invention, more light derived from the light emitting element used as a light source can be incident on the light receiving element or the light emitting and receiving element.

[0336] [Example of Pixel Circuit] The display device according to one aspect of the present invention includes, in a display unit, a first pixel circuit having a light receiving element and a second pixel circuit having a light emitting element. The first pixel circuit and the second pixel circuit are respectively arranged in a matrix.

[0337] FIG. 20A shows an example of a first pixel circuit having a light receiving element, and FIG. 20B shows an example of a second pixel circuit having a light emitting element.

[0338] The pixel circuit PIX1 shown in FIG. 20A has a light-receiving element PD, transistors M1, M2, M3, M4, and a capacitor C1. Here, an example using a photodiode is shown as the light-receiving element PD.

[0339] The cathode of the light-receiving element PD is electrically connected to the wiring V1, and the anode is electrically connected to one of the source or drain of the transistor M1. The gate of the transistor M1 is electrically connected to the wiring TX, and the other of the source or drain is electrically connected to one electrode of the capacitor C1, one of the source or drain of the transistor M2, and the gate of the transistor M3. The gate of the transistor M2 is electrically connected to the wiring RES, and the other of the source or drain is electrically connected to the wiring V2. One of the source or drain of the transistor M3 is electrically connected to the wiring V3, and the other of the source or drain is electrically connected to one of the source or drain of the transistor M4. The gate of the transistor M4 is electrically connected to the wiring SE, and the other of the source or drain is electrically connected to the wiring OUT1.

[0340] Constant potentials are supplied to the wirings V1, V2, and V3, respectively. When driving the light-receiving element PD in reverse bias, a potential lower than the potential of the wiring V1 is supplied to the wiring V2. The transistor M2 is controlled by the signal supplied to the wiring RES and has a function of resetting the potential of the node connected to the gate of the transistor M3 to the potential supplied to the wiring V2. The transistor M1 is controlled by the signal supplied to the wiring TX and has a function of controlling the timing at which the potential of the above node changes according to the current flowing through the light-receiving element PD. The transistor M3 functions as an amplification transistor that outputs according to the potential of the above node. The transistor M4 is controlled by the signal supplied to the wiring SE and functions as a selection transistor for reading out the output according to the potential of the above node to an external circuit connected to the wiring OUT1.

[0341] The pixel circuit PIX2 shown in FIG. 20B includes a light-emitting element EL, a transistor M5, a transistor M6, a transistor M7, and a capacitor C2. Here, an example using a light-emitting diode is shown as the light-emitting element EL. In particular, it is preferable to use an organic EL element as the light-emitting element EL.

[0342] The gate of transistor M5 is electrically connected to wiring VG, one of the source or drain is electrically connected to wiring VS, and the other of the source or drain is electrically connected to one electrode of capacitor C2 and the gate of transistor M6. One of the source or drain of transistor M6 is electrically connected to wiring V4, and the other is electrically connected to the anode of light-emitting element EL and one of the source or drain of transistor M7. The gate of transistor M7 is electrically connected to wiring MS, and the other of the source or drain is electrically connected to wiring OUT2. The cathode of light-emitting element EL is electrically connected to wiring V5.

[0343] A fixed potential is supplied to each of wiring V4 and wiring V5. The anode side of the light-emitting element EL can be set to a high potential, and the cathode side can be set to a lower potential than the anode side. Transistor M5 is controlled by the signal supplied to wiring VG and functions as a selection transistor for controlling the selection state of pixel circuit PIX2. Also, transistor M6 functions as a driving transistor for controlling the current flowing through light-emitting element EL according to the potential supplied to its gate. When transistor M5 is in the conductive state, the potential supplied to wiring VS is supplied to the gate of transistor M6, and the emission luminance of light-emitting element EL can be controlled according to that potential. Transistor M7 is controlled by the signal supplied to wiring MS and has a function of outputting the potential between transistor M6 and light-emitting element EL to the outside via wiring OUT2.

[0344] Wiring V1 to which the cathode of the light-receiving element PD is electrically connected and wiring V5 to which the cathode of the light-emitting element EL is electrically connected can be in the same layer and at the same potential.

[0345] In a display device according to one aspect of the present invention, it is preferable to use transistors (hereinafter also referred to as OS transistors) having a metal oxide (also referred to as an oxide semiconductor) in a semiconductor layer in which channels are formed, for all of the transistors included in pixel circuit PIX1 and pixel circuit PIX2. The OS transistor has an extremely small off-current and can hold charges stored in a capacitor connected in series with the transistor for a long period of time. Further, by using the OS transistor, the power consumption of the display device can be reduced.

[0346] Alternatively, in a display device according to one aspect of the present invention, it is preferable to use transistors (hereinafter also referred to as Si transistors) having silicon in a semiconductor layer in which channels are formed, for all of the transistors included in pixel circuit PIX1 and pixel circuit PIX2. Examples of silicon include single-crystalline silicon, polycrystalline silicon, and amorphous silicon. In particular, it is preferable to use a transistor (hereinafter also referred to as an LTPS transistor) having low-temperature polysilicon (LTPS (Low Temperature Poly-Silicon)) in the semiconductor layer. The LTPS transistor has a high field-effect mobility and can operate at high speed.

[0347] Furthermore, by using Si transistors such as LTPS transistors, it becomes easy to fabricate various circuits configured by CMOS circuits on the same substrate as the display unit. As a result, the external circuits mounted on the display device can be simplified, and the component cost and mounting cost can be reduced.

[0348] Alternatively, in a display device according to one aspect of the present invention, it is preferable to use two types of transistors in pixel circuit PIX1. Specifically, pixel circuit PIX1 preferably includes an OS transistor and an LTPS transistor. By changing the material of the semiconductor layer according to the functions required for the transistors, the quality of pixel circuit PIX1 can be improved, and the accuracy of sensing and imaging can be enhanced. At this time, either one or both of the OS transistor and the LTPS transistor may be used in pixel circuit PIX2.

[0349] Furthermore, even when two types of transistors (for example, an OS transistor and an LTPS transistor) are used for pixels, using the LTPS transistor makes it easy to fabricate various circuits composed of CMOS circuits on the same substrate as the display unit. As a result, the external circuits mounted on the display device can be simplified, and the component cost and mounting cost can be reduced.

[0350] A transistor using a metal oxide having a wider bandgap and a lower carrier density than silicon can achieve an extremely small off-current. Therefore, due to the small off-current, it is possible to hold the charges accumulated in the capacitor connected in series with the transistor for a long period. Therefore, it is preferable to use an OS transistor for the transistors M1, M2, and M5 connected in series to the capacitor C1 or the capacitor C2, in particular.

[0351] Also, it is preferable to use an Si transistor for the transistor M3. Thereby, the readout operation of the imaging data can be performed at high speed.

[0352] Note that a display device having a first pixel circuit including a light receiving element and a second pixel circuit including a light emitting element in the display unit can be driven in any of a mode for performing image display, a mode for performing imaging, and a mode for performing image display and imaging simultaneously. In the mode for performing image display, for example, a full-color image can be displayed using the light emitting element. Also, in the mode for performing imaging, for example, an imaging image (for example, green monochrome, blue monochrome, etc.) can be displayed using the light emitting element, and imaging can be performed using the light receiving element. In the mode for performing imaging, for example, fingerprint authentication or the like can be performed. Also, in the mode for performing image display and imaging simultaneously, for example, in some pixels, an imaging image can be displayed using the light emitting element, and imaging can be performed using the light receiving element, and in the remaining pixels, a full-color image can be displayed using the light emitting element.

[0353] In FIGS. 20A and 20B, the transistor is depicted as an n-channel transistor, but a p-channel transistor can also be used. Further, the transistor is not limited to a single gate and may further have a back gate.

[0354] It is preferable to provide one or more layers having one or both of a transistor and a capacitor at a position overlapping with the light-receiving element PD or the light-emitting element EL. Thereby, the effective occupied area of each pixel circuit can be reduced, and a high-definition display portion can be realized.

[0355] This embodiment can be appropriately combined with other embodiments.

[0356] (Embodiment 3) In this embodiment, a metal oxide (also referred to as an oxide semiconductor) that can be used for the OS transistor described in the above embodiment will be described.

[0357] The metal oxide preferably contains at least indium or zinc. Particularly, it preferably contains indium and zinc. In addition to those, it is preferable that aluminum, gallium, yttrium, tin, etc. are contained. Further, one or more selected from boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, cobalt, etc. may be contained.

[0358] Also, the metal oxide can be formed by a chemical vapor deposition (CVD) method such as a sputtering method or a metal organic chemical vapor deposition (MOCVD) method, or an atomic layer deposition (ALD) method.

[0359] <Classification of crystal structure> Examples of the crystal structure of the oxide semiconductor include amorphous (including completely amorphous), CAAC (c-axis-aligned crystalline), nc (nanocrystalline), CAC (cloud-aligned composite), single crystal, and poly crystal, etc.

[0360] Note that the crystal structure of the film or substrate can be evaluated using an X-ray diffraction (XRD) spectrum. For example, it can be evaluated using the XRD spectrum obtained by grazing-incidence XRD (GIXD) measurement. Note that the GIXD method is also called the thin film method or the Seemann-Bohlin method.

[0361] For example, in the case of a quartz glass substrate, the shape of the peak in the XRD spectrum is almost symmetric about the vertical axis. On the other hand, in the IGZO film having a crystal structure, the shape of the peak in the XRD spectrum is asymmetric about the vertical axis. The fact that the shape of the peak in the XRD spectrum is asymmetric about the vertical axis indicates the presence of crystals in the film or the substrate. In other words, if the shape of the peak in the XRD spectrum is not symmetric about the vertical axis, it cannot be said that the film or the substrate is in an amorphous state.

[0362] In addition, the crystal structure of the film or substrate can be evaluated by the diffraction pattern (also referred to as the nano beam electron diffraction pattern) observed by the nano beam electron diffraction (NBED) method. For example, in the diffraction pattern of a quartz glass substrate, a halo is observed, and it can be confirmed that the quartz glass is in an amorphous state. Also, in the diffraction pattern of an IGZO film formed at room temperature, a spot-like pattern rather than a halo is observed. Therefore, it is presumed that the IGZO film formed at room temperature is in an intermediate state that is neither crystalline nor amorphous, and it cannot be concluded that it is in an amorphous state.

[0363] <<Structure of Oxide Semiconductor>> Note that when focusing on the structure, the oxide semiconductor may be classified differently from the above. For example, the oxide semiconductor can be divided into a single-crystalline oxide semiconductor and other non-single-crystalline oxide semiconductors. Examples of the non-single-crystalline oxide semiconductor include the above-mentioned CAAC-OS and nc-OS. In addition, the non-single-crystalline oxide semiconductor includes a polycrystalline oxide semiconductor, a pseudo-amorphous oxide semiconductor (a-like OS: amorphous-like oxide semiconductor), an amorphous oxide semiconductor, and the like.

[0364] Here, the details of the above-mentioned CAAC-OS, nc-OS, and a-like OS will be described.

[0365] [CAAC-OS] CAAC-OS is an oxide semiconductor having a plurality of crystal regions, and the c-axis of the plurality of crystal regions is oriented in a specific direction. The specific direction is the thickness direction of the CAAC-OS film, the normal direction of the surface on which the CAAC-OS film is formed, or the normal direction of the surface of the CAAC-OS film. In addition, the crystal region is a region having periodicity in the atomic arrangement. When the atomic arrangement is regarded as a lattice arrangement, the crystal region is also a region where the lattice arrangements are aligned. Further, CAAC-OS has a region where a plurality of crystal regions are connected in the a-b plane direction, and this region may have strain. The strain refers to a portion where the direction of the lattice arrangement changes between a region where the lattice arrangements are aligned and another region where the lattice arrangements are aligned in the region where the plurality of crystal regions are connected. That is, CAAC-OS is an oxide semiconductor with c-axis orientation and no obvious orientation in the a-b plane direction.

[0366] Each of the plurality of crystal regions is composed of one or more minute crystals (crystals with a maximum diameter of less than 10 nm). When a crystal region is composed of one minute crystal, the maximum diameter of the crystal region is less than 10 nm. When a crystal region is composed of a number of minute crystals, the size of the crystal region may be on the order of several tens of nm.

[0367] In addition, in the In-M-Zn oxide (where element M is one or more selected from aluminum, gallium, yttrium, tin, titanium, etc.), CAAC-OS tends to have a layered crystal structure (also referred to as a layered structure) in which a layer containing indium (In) and oxygen (hereinafter, the In layer) and a layer containing element M, zinc (Zn), and oxygen (hereinafter, the (M,Zn) layer) are laminated. Note that indium and element M are mutually substitutable. Therefore, the (M,Zn) layer may contain indium. Also, the In layer may contain element M. In addition, the In layer may contain Zn. The layered structure is observed as a lattice image, for example, in a high-resolution TEM (Transmission Electron Microscope) image.

[0368] When a structural analysis is performed on the CAAC-OS film using, for example, an XRD apparatus, in the out-of-plane XRD measurement using a θ / 2θ scan, a peak indicating c-axis orientation is detected at 2θ = 31° or in the vicinity thereof. Note that the position (the value of 2θ) of the peak indicating c-axis orientation may vary depending on the type and composition of the metal elements constituting CAAC-OS.

[0369] In addition, for example, in the electron diffraction pattern of the CAAC-OS film, a plurality of bright spots (spots) are observed. Note that one spot and another spot are observed at point-symmetric positions with the spot of the incident electron beam transmitted through the sample (also referred to as the direct spot) as the center of symmetry.

[0370] When observing the crystal region from the above-mentioned specific direction, the lattice arrangement within the crystal region is based on a hexagonal lattice, but the unit cell is not necessarily a regular hexagon and may be an irregular hexagon. Further, in the above-mentioned strain, there may be a lattice arrangement such as a pentagon or a heptagon. In CAAC-OS, even in the vicinity of the strain, a clear grain boundary cannot be confirmed. That is, it can be seen that the formation of grain boundaries is suppressed by the strain of the lattice arrangement. This is presumably because CAAC-OS can tolerate strain due to the fact that the arrangement of oxygen atoms is not dense in the a-b plane direction and the interatomic bond distance changes due to the substitution of metal atoms.

[0371] A crystal structure in which a clear grain boundary is confirmed is called a so-called polycrystal. Grain boundaries serve as recombination centers, and carriers are likely to be captured, causing a decrease in the on-current of the transistor and a decrease in the field-effect mobility. Therefore, CAAC-OS in which no clear grain boundary is confirmed is one of the crystalline oxides having a crystal structure suitable for the semiconductor layer of the transistor. In addition, for forming CAAC-OS, a configuration having Zn is preferable. For example, In-Zn oxide and In-Ga-Zn oxide are preferable because they can suppress the generation of grain boundaries more than In oxide.

[0372] CAAC-OS is an oxide semiconductor with high crystallinity and no clear grain boundary confirmed. Therefore, it can be said that in CAAC-OS, a decrease in electron mobility due to grain boundaries is unlikely to occur. In addition, since the crystallinity of the oxide semiconductor may decrease due to the incorporation of impurities or the generation of defects, it can also be said that CAAC-OS is an oxide semiconductor with few impurities and defects (such as oxygen deficiency). Therefore, the physical properties of the oxide semiconductor having CAAC-OS are stable. For this reason, the oxide semiconductor having CAAC-OS is heat-resistant and highly reliable. In addition, CAAC-OS is also stable against high temperatures (so-called thermal budget) in the manufacturing process. Therefore, when CAAC-OS is used for the OS transistor, the degree of freedom in the manufacturing process can be expanded.

[0373] [nc-OS] nc-OS has periodicity in the atomic arrangement in a minute region (for example, a region of 1 nm or more and 10 nm or less, particularly a region of 1 nm or more and 3 nm or less). In other words, nc-OS has minute crystals. Since the size of the minute crystals is, for example, 1 nm or more and 10 nm or less, particularly 1 nm or more and 3 nm or less, the minute crystals are also referred to as nano-crystals. Further, nc-OS has no regularity in the crystal orientation among different nano-crystals. Therefore, no orientation is observed in the whole film. Accordingly, depending on the analysis method, nc-OS may not be distinguishable from a-like OS or an amorphous oxide semiconductor. For example, when structural analysis is performed on an nc-OS film using an XRD apparatus, no peak indicating crystallinity is detected in the out-of-plane XRD measurement using θ / 2θ scan. Further, when electron beam diffraction (also referred to as restricted view electron beam diffraction) using an electron beam having a probe diameter larger than that of the nano-crystals (for example, 50 nm or more) is performed on the nc-OS film, a diffraction pattern such as a halo pattern is observed. On the other hand, when electron beam diffraction (also referred to as nano-beam electron beam diffraction) using an electron beam having a probe diameter close to or smaller than that of the nano-crystals (for example, 1 nm or more and 30 nm or less) is performed on the nc-OS film, an electron beam diffraction pattern in which a plurality of spots are observed within a ring-shaped region centered on a direct spot may be obtained.

[0374] [a-like OS] a-like OS is an oxide semiconductor having a structure between nc-OS and an amorphous oxide semiconductor. a-like OS has a loose or low-density region. That is, a-like OS has lower crystallinity as compared with nc-OS and CAAC-OS. Further, a-like OS has a higher hydrogen concentration in the film as compared with nc-OS and CAAC-OS.

[0375] [[Constitution of Oxide Semiconductor]] Next, the details of the above-described CAC-OS will be described. Note that CAC-OS relates to the material constitution.

[0376] [CAC-OS] CAC-OS is, for example, a component of a material in which the elements constituting the metal oxide are unevenly distributed in a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 3 nm or less, or in the vicinity thereof. In the following, in the metal oxide, a state in which one or more metal elements are unevenly distributed and the regions having the metal elements are mixed in a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 3 nm or less, or in the vicinity thereof is also referred to as a mosaic state or a patch state.

[0377] Furthermore, CAC-OS becomes a mosaic state by separating the material into a first region and a second region, and the first region is a structure distributed in the film (hereinafter, also referred to as a cloud state). That is, CAC-OS is a composite metal oxide having a structure in which the first region and the second region are mixed.

[0378] Here, the atomic ratios of In, Ga, and Zn to the metal elements constituting CAC-OS in the In-Ga-Zn oxide are denoted as [In], [Ga], and [Zn], respectively. For example, in CAC-OS in the In-Ga-Zn oxide, the first region is a region where [In] is larger than [In] in the composition of the CAC-OS film. The second region is a region where [Ga] is larger than [Ga] in the composition of the CAC-OS film. Or, for example, the first region is a region where [In] is larger than [In] in the second region and [Ga] is smaller than [Ga] in the second region. The second region is a region where [Ga] is larger than [Ga] in the first region and [In] is smaller than [In] in the first region.

[0379] Specifically, the first region is a region mainly composed of indium oxide, indium zinc oxide, etc. The second region is a region mainly composed of gallium oxide, gallium zinc oxide, etc. That is, the first region can be rephrased as a region mainly composed of In. The second region can be rephrased as a region mainly composed of Ga.

[0380] Note that in some cases, a clear boundary may not be observable between the above-described first region and the second region.

[0381] In addition, CAC-OS in In-Ga-Zn oxide refers to a structure in which in a material composition containing In, Ga, Zn, and O, regions mainly composed of Ga in part and regions mainly composed of In in part are each mosaic-shaped and these regions are randomly present. Therefore, it is presumed that CAC-OS has a structure in which metal elements are unevenly distributed.

[0382] CAC-OS can be formed, for example, by a sputtering method under conditions where the substrate is not heated. Also, when forming CAC-OS by a sputtering method, any one or more selected from among inert gases (typically argon), oxygen gas, and nitrogen gas may be used as the film-forming gas. Further, the lower the flow rate ratio of oxygen gas to the total flow rate of the film-forming gas during film formation, the more preferable it is. For example, it is preferable that the flow rate ratio of oxygen gas to the total flow rate of the film-forming gas during film formation is 0% or more and less than 30%, preferably 0% or more and 10% or less.

[0383] Also, for example, in CAC-OS in In-Ga-Zn oxide, it can be confirmed by EDX mapping obtained using energy dispersive X-ray spectroscopy (EDX) that the region mainly composed of In (first region) and the region mainly composed of Ga (second region) are unevenly distributed and have a mixed structure.

[0384] Here, the first region is a region with higher conductivity compared to the second region. That is, when carriers flow through the first region, the conductivity as a metal oxide is exhibited. Therefore, when the first region is distributed in a cloud-like manner in the metal oxide, a high field-effect mobility (μ) can be realized.

[0385] On the one hand, the second region is a region with higher insulation compared to the first region. That is, by distributing the second region in the metal oxide, the leakage current can be suppressed.

[0386] Therefore, when using CAC-OS in a transistor, the conductivity caused by the first region and the insulation caused by the second region act complementarily, enabling the function of switching (the function of turning on / off) to be imparted to the CAC-OS. That is, CAC-OS has a conductive function in a part of the material and an insulating function in a part of the material, and has a semiconductor function as a whole. By separating the conductive function and the insulating function, both functions can be maximally enhanced. Thus, by using CAC-OS in a transistor, a high on-current (I on )、 high field-effect mobility (μ), and good switching operation can be realized.

[0387] Also, a transistor using CAC-OS has high reliability. Therefore, CAC-OS is optimal for various semiconductor devices including display devices.

[0388] Oxide semiconductors have various structures and each has different characteristics. The oxide semiconductor according to one aspect of the present invention may have two or more of amorphous oxide semiconductors, polycrystalline oxide semiconductors, a-like OS, CAC-OS, nc-OS, and CAAC-OS.

[0389] <Transistor having an oxide semiconductor> Subsequently, the case of using the above oxide semiconductor in a transistor will be described.

[0390] By using the above oxide semiconductor in a transistor, a transistor with high field-effect mobility can be realized. Also, a highly reliable transistor can be realized.

[0391] It is preferable to use an oxide semiconductor with a low carrier concentration for the transistor. For example, the carrier concentration of the oxide semiconductor is 1×10 17 cm -3 or less, preferably 1×10 15 cm -3 or less, more preferably 1×10 13 cm -3 or less, still more preferably 1×10 11 cm -3 or less, and most preferably less than 1×10 10 cm -3 , and is 1×10 -9 cm -3 or more. When reducing the carrier concentration of the oxide semiconductor film, the impurity concentration in the oxide semiconductor film may be decreased and the density of defect levels may be decreased. In this specification and the like, a low impurity concentration and a low density of defect levels are referred to as highly pure intrinsic or substantially highly pure intrinsic. Note that an oxide semiconductor with a low carrier concentration may be referred to as a highly pure intrinsic or substantially highly pure intrinsic oxide semiconductor.

[0392] In addition, since an oxide semiconductor film that is highly pure intrinsic or substantially highly pure intrinsic has a low density of defect levels, the density of trap levels may also be low.

[0393] In addition, the charge trapped in the trap levels of the oxide semiconductor has a long time until it disappears and may behave like a fixed charge. Therefore, a transistor in which a channel formation region is formed in an oxide semiconductor with a high density of trap levels may have unstable electrical characteristics.

[0394] Therefore, in order to stabilize the electrical characteristics of the transistor, it is effective to reduce the impurity concentration in the oxide semiconductor. In addition, in order to reduce the impurity concentration in the oxide semiconductor, it is preferable to also reduce the impurity concentration in the adjacent film. Examples of the impurity include hydrogen, nitrogen, an alkali metal, an alkaline earth metal, iron, nickel, and silicon.

[0395] <Impurity> Here, the effects of various impurities in the oxide semiconductor will be described.

[0396] In an oxide semiconductor, when silicon or carbon, which is one of the Group 14 elements, is contained, defect levels are formed in the oxide semiconductor. Therefore, the concentration of silicon or carbon in the oxide semiconductor and the concentration of silicon or carbon near the interface with the oxide semiconductor (the concentration obtained by secondary ion mass spectrometry (SIMS)) are preferably 2×10 18 atoms / cm 3 or less, preferably 2×10 17 atoms / cm 3 or less.

[0397] In addition, when an oxide semiconductor contains an alkali metal or an alkaline earth metal, defect levels may be formed and carriers may be generated. Therefore, a transistor using an oxide semiconductor containing an alkali metal or an alkaline earth metal tends to have normally-on characteristics. For this reason, the concentration of the alkali metal or alkaline earth metal in the oxide semiconductor obtained by SIMS is preferably 1×10 18 atoms / cm 3 or less, preferably 2×10 16 atoms / cm 3 or less.

[0398] In addition, in an oxide semiconductor, when nitrogen is contained, electrons as carriers are generated, the carrier concentration increases, and it tends to be n-type. As a result, a transistor using an oxide semiconductor containing nitrogen as a semiconductor tends to have normally-on characteristics. Or, when nitrogen is contained in an oxide semiconductor, trap levels may be formed. As a result, the electrical characteristics of the transistor may become unstable. For this reason, the nitrogen concentration in the oxide semiconductor obtained by SIMS is less than 5×10 19 atoms / cm 3 preferably less than 5×10 18 atoms / cm 3 more preferably 1×10 18 atoms / cm 3Hereinafter, more preferably, it is 5×10 17 atoms / cm 3 or less.

[0399] In addition, since hydrogen contained in the oxide semiconductor reacts with oxygen bonded to metal atoms to form water, oxygen vacancies may be formed. When hydrogen enters these oxygen vacancies, carriers such as electrons may be generated. Also, a part of hydrogen may bond with oxygen bonded to metal atoms to generate carriers such as electrons. Therefore, a transistor using an oxide semiconductor containing hydrogen tends to have normally-on characteristics. For this reason, it is preferable that hydrogen in the oxide semiconductor is reduced as much as possible. Specifically, in the oxide semiconductor, the hydrogen concentration obtained by SIMS is 1×10 20 atoms / cm 3 or less, preferably 1×10 19 atoms / cm 3 or less, more preferably 5×10 18 atoms / cm 3 or less, and even more preferably 1×10 18 atoms / cm 3 or less.

[0400] By using an oxide semiconductor with sufficiently reduced impurities in the channel formation region of a transistor, stable electrical characteristics can be imparted.

[0401] This embodiment can be appropriately combined with other embodiments.

[0402] (Embodiment 4) In this embodiment, an electronic device according to one aspect of the present invention will be described with reference to FIGS. 21 to 23.

[0403] An electronic device according to one aspect of the present invention can perform imaging on a display unit and detect touch operations. Thereby, the functionality and convenience of the electronic device can be enhanced.

[0404] Examples of the electronic device according to one aspect of the present invention include, for example, electronic devices having a relatively large screen such as a television device, a desktop or notebook personal computer, a monitor for a computer, a digital signage, a large game machine such as a pachinko machine, as well as a digital camera, a digital video camera, a digital photo frame, a mobile phone, a portable game machine, a portable information terminal, an audio playback device, and the like.

[0405] The electronic device according to one aspect of the present invention may have a sensor (including a function of measuring force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays).

[0406] The electronic device according to one aspect of the present invention can have various functions. For example, it can have a function of displaying various information (such as still images, moving images, text images, etc.) on a display unit, a touch panel function, a function of displaying a calendar, date, or time, a function of executing various software (programs), a wireless communication function, a function of reading programs or data recorded on a recording medium, and the like.

[0407] The electronic device 6500 shown in FIG. 21A is a portable information terminal that can be used as a smartphone.

[0408] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, and the like. The display unit 6502 has a touch panel function.

[0409] The display device shown in Embodiment 2 can be applied to the display unit 6502.

[0410] FIG. 21B is a schematic cross-sectional view including an end portion of the housing 6501 on the microphone 6506 side.

[0411] A protective member 6510 having translucency is provided on the display surface side of the housing 6501, and a display panel 6511, an optical member 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged in the space surrounded by the housing 6501 and the protective member 6510.

[0412] On the protective member 6510, the display panel 6511, the optical member 6512, and the touch sensor panel 6513 are fixed by an adhesive layer (not shown).

[0413] In a region outside the display unit 6502, a part of the display panel 6511 is folded back, and an FPC 6515 is connected to the folded-back portion. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on the printed circuit board 6517.

[0414] A flexible display according to an aspect of the present invention can be applied to the display panel 6511. Therefore, an extremely lightweight electronic device can be realized. Further, since the display panel 6511 is extremely thin, a large-capacity battery 6518 can be mounted while suppressing the thickness of the electronic device. Further, by folding back a part of the display panel 6511 and arranging a connection portion with the FPC 6515 on the back side of the pixel portion, a narrow bezel electronic device can be realized.

[0415] By using the display device shown in the second embodiment for the display panel 6511, imaging can be performed by the display unit 6502. For example, a fingerprint can be imaged by the display panel 6511, and fingerprint authentication can be performed.

[0416] Since the display unit 6502 further has a touch sensor panel 6513, a touch panel function can be imparted to the display unit 6502. As the touch sensor panel 6513, various methods such as a capacitance method, a resistive film method, a surface acoustic wave method, an infrared method, an optical method, and a pressure-sensitive method can be used. Alternatively, the display panel 6511 may function as a touch sensor, and in that case, the touch sensor panel 6513 may not be provided.

[0417] FIG. 22A shows an example of a television apparatus. In the television apparatus 7100, a display unit 7000 is incorporated in a housing 7101. Here, a configuration in which the housing 7101 is supported by a stand 7103 is shown.

[0418] The display device shown in Embodiment 2 can be applied to the display unit 7000.

[0419] The operation of the television apparatus 7100 shown in FIG. 22A can be performed by an operation switch provided in the housing 7101 or a separate remote control operation unit 7111. Alternatively, the display unit 7000 may be provided with a touch sensor, and the television apparatus 7100 may be operated by touching the display unit 7000 with a finger or the like. The remote control operation unit 7111 may have a display unit that displays information output from the remote control operation unit 7111. Channel and volume operations can be performed by operation keys or a touch panel provided in the remote control operation unit 7111, and the video displayed on the display unit 7000 can be operated.

[0420] Note that the television apparatus 7100 has a configuration including a receiver and a modem or the like. General television broadcasts can be received by the receiver. Also, by connecting to a communication network by wire or wirelessly via the modem, one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers) information communication can be performed.

[0421] FIG. 22B shows an example of a notebook personal computer. The notebook personal computer 7200 has a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, and the like. A display unit 7000 is incorporated in the housing 7211.

[0422] The display device shown in Embodiment 2 can be applied to the display unit 7000.

[0423] Figures 22C and 22D show an example of digital signage.

[0424] The digital signage 7300 shown in FIG. 22C includes a housing 7301, a display unit 7000, a speaker 7303, etc. Further, it can have an LED lamp, operation keys (including a power switch or an operation switch), connection terminals, various sensors, a microphone, etc.

[0425] FIG. 22D shows a digital signage 7400 attached to a cylindrical column 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of the column 7401.

[0426] The larger the display unit 7000 is, the more information can be provided at one time. Also, the larger the display unit 7000 is, the more likely it is to catch people's eyes, for example, the advertising effect can be enhanced.

[0427] By applying a touch panel to the display unit 7000, not only can an image or a video be displayed on the display unit 7000, but also the user can operate it intuitively, which is preferable. Also, when used for applications such as providing route information or traffic information, the usability can be improved by intuitive operation.

[0428] Also, as shown in FIGS. 22C and 22D, it is preferable that the digital signage 7300 or the digital signage 7400 can be linked by wireless communication with an information terminal 7311 or an information terminal 7411 such as a smartphone held by the user. For example, the information of the advertisement displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411. Also, by operating the information terminal 7311 or the information terminal 7411, the display of the display unit 7000 can be switched.

[0429] In FIGS. 22C and 22D, the display device shown in Embodiment 2 can be applied to the display unit of the information terminal 7311 or the information terminal 7411.

[0430] In addition, a game can also be executed on the digital signage 7300 or the digital signage 7400, using the screen of the information terminal 7311 or the information terminal 7411 as an operation means (controller). As a result, an unspecified number of users can participate in and enjoy the game simultaneously.

[0431] The electronic device shown in FIGS. 23A to 23F includes a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), connection terminals 9006, a sensor 9007 (including a function for measuring force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, inclination, vibration, odor, or infrared rays), a microphone 9008, and the like.

[0432] The electronic device shown in FIGS. 23A to 23F has various functions. For example, it can have a function of displaying various information (such as still images, moving images, text images, etc.) on the display unit, a touch panel function, a function of displaying a calendar, date, or time, a function of controlling processing by various software (programs), a wireless communication function, a function of reading and processing programs or data recorded on a recording medium, and the like. Note that the functions of the electronic device are not limited to these and can have various functions. The electronic device may have a plurality of display units. In addition, the electronic device may be provided with a camera or the like and have functions such as shooting still images and moving images and storing them in a recording medium (external or built-in to the camera), and displaying the captured images on the display unit.

[0433] Details of the electronic device shown in FIGS. 23A to 23F will be described below.

[0434] FIG. 23A is a perspective view showing a portable information terminal 9101. The portable information terminal 9101 can be used as, for example, a smartphone. Note that the portable information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, etc. Further, the portable information terminal 9101 can display character and image information on its plurality of surfaces. FIG. 23A shows an example in which three icons 9050 are displayed. Also, information 9051 indicated by a dashed rectangle can be displayed on other surfaces of the display unit 9001. Examples of the information 9051 include notifications of incoming calls such as e-mail, SNS, and telephone, titles of e-mail and SNS, sender names, dates, times, remaining battery level, antenna reception strength, etc. Alternatively, an icon 9050 or the like may be displayed at the position where the information 9051 is displayed.

[0435] FIG. 23B is a perspective view showing a portable information terminal 9102. The portable information terminal 9102 has a function of displaying information on three or more surfaces of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are respectively displayed on different surfaces. For example, the user can also confirm the information 9053 displayed at a position where it can be observed from above the portable information terminal 9102 with the portable information terminal 9102 stored in the breast pocket of the clothing. The user can check the display without taking the portable information terminal 9102 out of the pocket and can determine, for example, whether to answer a call.

[0436] FIG. 23C is a perspective view showing a wristwatch-type portable information terminal 9200. The portable information terminal 9200 can be used as, for example, a smartwatch. Also, the display surface of the display unit 9001 is provided to be curved, and display can be performed along the curved display surface. Further, the portable information terminal 9200 can also make a hands-free call by communicating with, for example, a wirelessly communicable headset. Also, the portable information terminal 9200 can perform data transmission with other information terminals and charging by means of the connection terminal 9006. Note that the charging operation may be performed by wireless power supply.

[0437] Figs. 23D to 23F are perspective views showing the foldable mobile information terminal 9201. Further, Fig. 23D shows the state where the mobile information terminal 9201 is unfolded, Fig. 23F shows the folded state, and Fig. 23E is a perspective view of the state in the middle of changing from one of Fig. 23D and Fig. 23F to the other. The mobile information terminal 9201 has excellent portability in the folded state and excellent display listability due to a seamless wide display area in the unfolded state. The display unit 9001 included in the mobile information terminal 9201 is supported by three housings 9000 connected by a hinge 9055. For example, the display unit 9001 can be bent with a curvature radius of 0.1 mm or more and 150 mm or less.

[0438] This embodiment can be appropriately combined with other embodiments.

Explanation of Signs

[0439] EL: Light-emitting element, MS: Wiring, PD: Light-receiving element, RES: Wiring, SE: Wiring, TX: Wiring, VG: Wiring, VS: Wiring, 10A: Electronic device, 10: Electronic device, 11: Control unit, 12: Memory unit, 13: Display unit, 14: Detection unit, 21: Finger, 22X: Fingerprint, 22: Fingerprint, 23: Fingerprint information, 24: Finger, 25: Fingerprint, 26: Fingerprint information, 30: Electronic device, 31: Display unit, 32: Icon, 33: Information, 34: Information, 35: First information, 36: Second information, 40: Electronic device, 41: Display unit, 42: Input unit, 43: Input key, 44: Housing, 45: Housing, 46: Hinge part, 100A: Display device, 100B: Display device, 100C: Display device, 100D: Display device, 100E: Display device, 110: Light-receiving element, 112: Common layer, 114: Common layer, 115: Common electrode, 116: Protection layer, 121B: Light, 121G: Light, 121R: Light, 121: Visible light, 122: Light, 123a: Stray light, 123b: Stray light, 123: Light, 124: Reflected light, 131: Transistor, 132: Transistor, 142: Adhesive layer, 151: Substrate, 152: Substrate, 153: Substrate, 154: Substrate, 155: Adhesive layer, 156: Adhesive layer, 157: Insulating layer, 158: Light-shielding layer, 159p: Opening, 159: Resin layer, 162: Display unit, 164: Circuit, 165: Wiring, 166: Conductive layer, 167: Conductive layer, 169: Conductive layer, 172: FPC, 173: IC, 182: Buffer layer, 183: Active layer, 184: Buffer layer, 190B: Light-emitting element, 190G: Light-emitting element, 190R: Light-emitting element, 190: Light-emitting element, 191: Pixel electrode, 192B: Buffer layer, 192G: Buffer layer, 192R: Buffer layer, 192: Buffer layer, 193B: Light-emitting layer, 193G: Light-emitting layer, 193R: Light-emitting layer, 193: Light-emitting layer, 194B: Buffer layer, 194G: Buffer layer, 194R: Buffer layer, 194: Buffer layer, 200A: Display device, 200B: Display device, 201: Substrate, 202: Finger, 203: Layer having a light-receiving element, 204: Layer having a light-emitting and light-receiving element, 205: Functional layer, 207: Layer having a light-emitting element, 208: Stylus, 209: Substrate, 211: Insulating layer, 212: Insulating layer, 213: Insulating layer, 214a: Insulating layer, 214b: Insulating layer, 214: Insulating layer, 215: Insulating layer, 216: Partition, 219a: Light-shielding layer, 219b: Spacer, 221: Conductive layer, 222a: Conductive layer, 222b: Conductive layer, 223: Conductive layer, 225: Insulating layer, 228: Region,231i: Channel formation region, 231n: Low resistance region, 231: Semiconductor layer, 240: Transistor, 241: Transistor, 242: Connection layer, 243: Transistor, 244: Connection part, 245: Transistor, 246: Transistor, 247: Transistor, 248: Transistor, 249: Transistor, 252: Transistor, 261: Contact part, 262: Fingerprint, 266: Locus, 270B: Light emitting element, 270G: Light emitting element, 270PD: Light receiving element, 270R: Light emitting element, 271: Pixel electrode, 273: Active layer, 275: Common electrode, 280A: Display device, 280B: Display device, 280C: Display device, 281: Hole injection layer, 282: Hole transport layer, 283B: Light emitting layer, 283G: Light emitting layer, 283R: Light emitting layer, 283: Light emitting layer, 284: Electron transport layer, 285: Electron injection layer, 6500: Electronic device, 6501: Housing, 6502: Display unit, 6503: Power button, 6504: Button, 6505: Speaker, 6506: Microphone, 6507: Camera, 6508: Light source, 6510: Protection member, 6511: Display panel, 6512: Optical member, 6513: Touch sensor panel, 6515: FPC, 6516: IC, 6517: Printed circuit board, 6518: Battery, 7000: Display unit, 7100: Television device, 7101: Housing, 7103: Stand, 7111: Remote control operation device, 7200: Notebook personal computer, 7211: Housing, 7212: Keyboard, 7213: Pointing device, 7214: External connection port, 7300: Digital signage, 7301: Housing, 7303: Speaker, 7311: Information terminal device, 7400: Digital signage, 7401: Column, 7411: Information terminal device, 9000: Housing, 9001: Display unit, 9003: Speaker, 9005: Operation key, 9006: Connection terminal, 9007: Sensor, 9008: Microphone, 9050: Icon, 9051: Information, 9052: Information, 9053: Information, 9054: Information, 9055: Hinge, 9101: Portable information terminal, 9102: Portable information terminal, 9200: Portable information terminal, 9201: Portable information terminal,

Claims

1. An electronic device having a control unit, a storage unit, and a display unit, wherein the display unit has a function of displaying a first icon, a function of detecting a touch operation in a display area of the first icon, and a function of acquiring first fingerprint information in the display area of the first icon; the storage unit has a function of holding second fingerprint information; the control unit has a function of collating the first fingerprint information and the second fingerprint information; has a function of executing a first process associated with the first icon when the first fingerprint information and the second fingerprint information match; has a function of executing a second process when the first fingerprint information and the second fingerprint information do not match; the display unit has a light-emitting element and a light-receiving element; the light-emitting element has a first electrode, a light-emitting layer, and a second electrode; the light-receiving element has a third electrode, an active layer, and a fourth electrode; the second electrode of the light-emitting element and the fourth electrode of the light-receiving element are a common layer; a first common layer is provided between the light-emitting layer and the first electrode and between the active layer and the third electrode; and a second common layer is provided between the light-emitting layer and the second electrode and between the active layer and the fourth electrode. An electronic device.

2. The electronic device according to claim 1, wherein the display unit has a function of displaying a second icon and a function of detecting a touch operation in a display area of the second icon; and the control unit has a function of executing a third process associated with the second icon when the display unit detects a touch operation on the second icon.

3. The electronic device according to claim 1, wherein the display unit has a function of displaying a second icon and a function of acquiring third fingerprint information in a display area of the second icon; the storage unit has a function of holding fourth fingerprint information; the control unit has a function of collating the third fingerprint information and the fourth fingerprint information; has a function of executing a third process associated with the second icon when the third fingerprint information and the fourth fingerprint information match; and has a function of executing a fourth process when the third fingerprint information and the fourth fingerprint information do not match. An electronic device.

4. An electronic device having a control unit, a storage unit, and a display unit, wherein the display unit has a function of displaying a first icon and a function of acquiring a plurality of first fingerprint information in a display area of the first icon; The memory unit has a function of holding a plurality of second fingerprint information, The control unit, A function of collating each of the first fingerprint information with the plurality of second fingerprint information, A function of executing a first process associated with the first icon when each of the first fingerprint information matches any of the plurality of second fingerprint information, A function of executing a second process when at least one of the first fingerprint information does not match any of the plurality of second fingerprint information, The display unit has a light-emitting element and a light-receiving element, The light-emitting element has a first electrode, a light-emitting layer, and a second electrode, The light-receiving element has a third electrode, an active layer, and a fourth electrode, The second electrode of the light-emitting element and the fourth electrode of the light-receiving element are a common layer, A first common layer is provided between the light-emitting layer and the first electrode and between the active layer and the third electrode, An electronic device having a second common layer between the light-emitting layer and the second electrode and between the active layer and the fourth electrode.

5. In any one of Claims 1 to 4, The electronic device, wherein the second process is a process of locking information associated with the first icon.

6. In any one of Claims 1 to 4, The first process is a process of displaying information associated with the first icon on the display unit, The electronic device, wherein the second process is a process of displaying information different from the information associated with the first icon on the display unit.

Images