Light-emitting display device

Abstract

To provide a light-emitting display device capable of improving light extraction efficiency.SOLUTION: A light-emitting display device according to one embodiment includes: a sub-pixel including a light-emitting region and a circuit region arranged so as to be adjacent in a first direction; a driving transistor provided in the circuit region of the sub-pixel and including an active layer and a gate electrode; a light-emitting element provided in the light-emitting region of the sub-pixel and including an anode electrode, a light-emitting layer and a cathode electrode; a pixel power source line supplying a pixel power source to the driving transistor of the sub-pixel; and a pixel power source connection pattern connecting the pixel power source line and the driving transistor of the sub-pixel. The pixel power source connection pattern includes a first laser cutting region, and exists in the same layer as the active layer of the driving transistor and composed of the same material.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present invention relates to a light-emitting display device.

Background Art

[0002] A light-emitting display device has a high response speed, low power consumption, and is self-luminous without requiring a separate light source unlike a liquid crystal display device, so there is no problem with the viewing angle and it is attracting attention as a next-generation flat panel display device.

[0003] A light-emitting display device displays an image through the light emission of a light-emitting element including a light-emitting layer interposed between two electrodes.

[0004] However, in a light-emitting display device, part of the light emitted from the light-emitting element layer cannot be emitted to the outside due to total reflection at the interface between the light-emitting element layer and the electrode and / or the interface between the substrate and the air layer, etc., resulting in a decrease in light extraction efficiency. As a result, the light-emitting display device has a problem that the luminance decreases due to low light extraction efficiency and the power consumption increases.

Summary of the Invention

Problems to be Solved by the Invention

[0005] A technical problem of the present invention is to provide a light-emitting display device capable of improving the light extraction efficiency of light emitted by a light-emitting element.

[0006] Another technical problem of the present invention is to provide a light-emitting display device capable of improving the aperture ratio.

[0007] Another technical problem of the present invention is to provide a light-emitting display device capable of preventing damage to the light-emitting element in the laser cutting process.

Means for Solving the Problems

[0008] The light-emitting display device according to an embodiment of the present invention includes a sub-pixel including a light-emitting region and a circuit region arranged adjacent to each other in a first direction, a driving transistor provided in the circuit region of the sub-pixel and including an active layer and a gate electrode, a light-emitting element provided in the light-emitting region of the sub-pixel and including an anode electrode, a light-emitting layer, and a cathode electrode, a pixel power supply line for supplying a pixel power supply to the driving transistor of the sub-pixel, and a pixel power supply connection pattern connecting the pixel power supply line and the driving transistor of the sub-pixel. The pixel power supply connection pattern includes a first laser cutting region and is made of the same material in the same layer as the active layer of the driving transistor.

Effects of the Invention

[0009] The present invention can have a high luminous efficiency even at low power by improving the light extraction efficiency of the light emitted from the light-emitting element layer. Therefore, the present invention can reduce power consumption.

[0010] In addition, the present invention can reduce the laser power by forming at least one of the pixel power supply connection pattern, the data connection pattern, and the reference connection pattern with a material that can be cut even with a low laser power.

[0011] In addition, the present invention forms at least one of the pixel power supply connection pattern, the data connection pattern, and the reference connection pattern with the same material in the same layer as the active layer of the driving transistor, so that a sufficient separation distance can be ensured between at least one of the pixel power supply connection pattern, the data connection pattern, and the reference connection pattern and the light-emitting element. Thereby, the present invention can prevent the light-emitting element from being damaged by the laser power.

[0012] In addition, the present invention can shorten the horizontal separation distance between at least one of the pixel power supply connection pattern, the data connection pattern, and the reference connection pattern and the light-emitting element, thereby reducing the area of the circuit region and increasing the area of the light-emitting region.

[0013] In addition, in the present invention, the drive contact portion and the welding contact portion can be arranged adjacent to each other in a direction parallel to the direction in which sub-pixels provided in one pixel are arranged. Thereby, the present invention can reduce the area of the circuit region and, as a result, increase the area of the light-emitting region.

[0014] Further, in the present invention, when forming the drive contact hole and the welding contact hole, by forming the inclined surface formed between the drive contact portion and the welding contact portion to have a high inclination degree, a minimum interval can be ensured between the halftone mask for forming the inclined surface of the drive contact hole and the halftone mask for forming the inclined surface of the welding contact hole. Thereby, the present invention can form an inclined surface between the drive contact hole and the welding contact hole in a desired form, and can stably form the anode electrodes formed in each of the drive contact hole and the welding contact hole.

[0015] In addition, in the present invention, since it is not necessary to increase the horizontal length of the region where the drive contact portion and the welding contact portion are formed, even in a high-resolution light-emitting display device, the drive contact portion and the welding contact portion can be arranged adjacent to each other in the horizontal direction.

[0016] Further, in the present invention, by forming the anode electrode so as to cover the inclined surface of the overcoat layer in the welding contact hole, it is possible to prevent the etching solution from penetrating between the inclined surface of the overcoat layer and the passivation layer during the formation of the anode electrode. Thereby, the present invention can prevent the etching solution from penetrating into the first connection electrode through the shim of the passivation layer even if a shim exists in the passivation layer, and as a result, can prevent the first connection electrode from being damaged.

[0017] The problems to be solved, the means for solving the problems, and the content of the effects mentioned above do not specify the essential features of the claims. Therefore, the scope of rights of the claims is not limited by the matters described in the content of the invention.

Brief Description of the Drawings

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Embodiments for Carrying Out the Invention

[0019] The advantages, features, and methods for achieving them of this specification will become apparent by referring to the embodiments described in detail below together with the accompanying drawings. However, this specification is not limited to the embodiments disclosed below, but is embodied in various different forms, and merely these embodiments are provided to make the disclosure of this specification complete and to fully inform those with ordinary knowledge in the technical field to which this specification belongs of the scope of the invention.

[0020] The shapes, sizes, ratios, angles, numbers, etc. disclosed in the figures for explaining the embodiments of this specification are exemplary, and this specification is not limited to the matters shown in the figures. Also, in explaining this specification, when it is determined that specific descriptions of related known technologies may unnecessarily obscure the gist of this specification, the detailed descriptions thereof are omitted. When terms such as "including", "having", "consisting of", etc. mentioned in this specification are used, other parts can be added unless "only" is used. When a component is expressed in the singular, it includes the case of including a plurality unless there are specific descriptions to the contrary.

[0021] In the case of an explanation of a positional relationship, for example, when the positional relationship between two parts is explained by "on ~", "above ~", "below ~", "next to ~", etc., unless "immediately" or "directly" is used, one or more other parts can also be located between the two parts.

[0022] First, second, etc. are used to explain various components, but these components are not limited by these terms. These terms are merely used to distinguish one component from another. Therefore, the first component mentioned below can also be the second component within the technical idea of the present invention.

[0023] The term "at least one" should be understood to include all combinations that can be presented from one or more related items. For example, the meaning of "at least one of the first item, the second item, and the third item" can mean not only each of the first item, the second item, or the third item alone, but also all combinations of items that can be presented from two or more of the first item, the second item, and the third item.

[0024] Each feature of each of several embodiments of the present invention can be partially or wholly combined or combined with each other, and various linkages and drives are technically possible. Each embodiment can be implemented independently of each other or implemented together in an associated relationship. Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0025] FIG. 1 is a plan view schematically showing a light-emitting display device according to an embodiment of the present invention.

[0026] Referring to FIG. 1, a light-emitting display device according to an embodiment of the present invention includes a first substrate 100, a plurality of pixels (P), and a second substrate 300.

[0027] The first substrate 100 is a thin-film transistor array substrate and can be made of a glass or plastic material. The first substrate 100 can be divided into a display area (DA) and a non-display area (NDA).

[0028] The display area (DA) is an area where a plurality of pixels (P) are provided to display an image, and can correspond to the remaining area excluding the edge area of the first substrate 100.

[0029] The plurality of pixels (P) are provided in the display area (DA) and can be defined as unit areas where actual light emits. Each of the plurality of pixels (P) can include a plurality of sub-pixels (SP). As an example, each of the plurality of pixels (P) can include a red sub-pixel that emits red light, a green sub-pixel that emits green light, and a blue sub-pixel that emits blue light, but is not necessarily limited thereto. As another example, each of the plurality of pixels (P) can also include a white sub-pixel that emits white light. The sizes of the plurality of sub-pixels included in each of the plurality of pixels (P) may be the same as or different from each other.

[0030] The non-display area (NDA) is an area that does not display an image and can correspond to the area excluding the display area (DA). The non-display area (NDA) is the edge area of the first substrate 100 surrounding the display area (DA), can have a relatively narrow width, and can also be defined as a bezel area (Bezel). A peripheral circuit 120 including wirings, circuits, etc. for driving a plurality of pixels (P) provided in the display area (DA) can be provided in the non-display area (NDA).

[0031] The peripheral circuit 120 can include a gate driving circuit connected to a plurality of pixels (P). The gate driving circuit can be integrated in the non-display area (NDA) on one side or both sides of the first substrate 100 by a manufacturing process of thin film transistors and connected to a plurality of pixels (P). Such a gate driving circuit can be formed by a GIP (gate driver in panel) method, a GIA (gate driver in active area) or a TAB (tape automated bonding) method.

[0032] The second substrate 300 can protect the pixel array provided on the first substrate 100. The second substrate 300 can be defined as a counter substrate, a sealing substrate or a color filter array substrate, and can be attached to the first substrate 100 via an adhesive member (or a transparent adhesive). The second substrate 300 can be made of a transparent glass material or a transparent plastic material, but is not limited thereto. The second substrate 300 can also be omitted if necessary.

[0033] FIG. 2 is a plan view schematically showing pixels provided in the display area, FIG. 3 is a cross-sectional view taken along line I-I' shown in the light-emitting area of FIG. 2, and FIG. 4 is a plan view showing a part of the light extraction part shown in FIG. 3.

[0034] Referring to FIGS. 1 and 2, a light-emitting display device according to an embodiment of the present invention includes a plurality of pixels (P) in a display area (DA), and each of the plurality of pixels (P) can include a plurality of sub-pixels (SP). In one embodiment, each of the plurality of pixels (P) can include four sub-pixels (SP1 to SP4). As an example, each of the plurality of pixels (P) can include a first red sub-pixel (SP1), a second green sub-pixel (SP2), a third blue sub-pixel (SP3), and a fourth white sub-pixel (SP4), but is not necessarily limited thereto.

[0035] Each of the first to fourth sub-pixels (SP1 to SP4) can include a light-emitting area (EA) and a circuit area (CA). The light-emitting area (EA) is disposed on one side (or upper side) of the sub-pixel area, and the circuit area (CA) can be disposed on the other side (or lower side) of the sub-pixel area. For example, the circuit area (CA) can be disposed below the light-emitting area (EA) with respect to the second direction (e.g., the Y-axis direction). The light-emitting areas (EA) of the first to fourth sub-pixels (SP1 to SP4) can have the same size as each other, but are not necessarily limited thereto. The light-emitting areas (EA) of the first to fourth sub-pixels (SP1 to SP4) can also have different sizes (or areas).

[0036] The circuit area (CA) can be spatially separated from the light-emitting area (EA) within the sub-pixel area, but is not limited thereto. For example, at least a part of the circuit area (CA) can overlap with the light-emitting area (EA) within the sub-pixel area or be disposed below the light-emitting area (EA). The light-emitting area (EA) can be an aperture area, a light-emitting area, a transmissive area, or a transmissive portion. The circuit area (CA) can be a non-light-emitting area (NEA) or a non-aperture area.

[0037] Each of the first to fourth sub-pixels (SP1 to SP4) according to an embodiment can further include a transparent portion disposed around at least one of the light-emitting area (EA) and the circuit area (CA). In this case, the light-emitting display device can be realized as a transparent light-emitting display device by light transmission through the transparent portion.

[0038] As shown in FIG. 3, each of the first to fourth sub-pixels (SP1 to SP4) can be provided with a light extraction unit 140 and a light emitting element 150 in a light emitting region (EA).

[0039] Referring to FIG. 3, an overcoat layer 130 can be provided on the first substrate 100 having the pixel circuit layer 110. The overcoat layer 130 can be provided on the first substrate 100 so as to cover the pixel circuit layer 110. The overcoat layer 130 can be formed in the remaining region excluding the pad region and the entire display region (DA) in the non-display region (NDA). For example, the overcoat layer 130 can include an extension (or expansion part) extending or expanded toward the remaining non-display region excluding the pad region from the display region (DA). Therefore, the overcoat layer 130 can have a relatively larger size than the display region (DA).

[0040] The overcoat layer 130 is formed to have a relatively thick thickness and can provide a flat surface on the pixel circuit layer 110. For example, the overcoat layer 130 is an organic insulating layer and can be made of an organic material such as photoacrylic, benzocyclobutene, polyimide, and fluororesin as an example.

[0041] The light extraction unit 140 can be formed on the upper surface of the overcoat layer 130 so as to overlap with the light emitting region (EA) of the sub-pixel (SP). By forming the light extraction unit 140 on the overcoat layer 130 to have a bent (or uneven) shape, the traveling path of the light emitted from the light emitting element 150 can be changed, and the light extraction efficiency can be improved. For example, the light extraction unit 140 can be a non-flat part, an uneven pattern part, a microlens part, or a light scattering pattern part.

[0042] The light extraction part 140 can include a plurality of concave portions 141 and convex portions 143 disposed around each of the plurality of concave portions 141. The plurality of concave portions 141 can form a honeycomb pattern on a plane, but are not necessarily limited thereto. The plurality of concave portions 141 can be formed or configured concavely from the upper surface of the overcoat layer 130. The convex portions 143 can be disposed between the plurality of concave portions 141. The convex portions 143 can be formed so as to surround each of the plurality of concave portions 141.

[0043] The upper part of the convex portion 143 can include a pointed tip structure in order to improve the light extraction efficiency, but is not limited thereto. For example, the upper part of the convex portion 143 can have a convex curved surface form. For example, the upper part of the convex portion 143 can include a dome or bell structure having a convex cross-sectional shape, but is not limited thereto.

[0044] The convex portion 143 can include an inclined portion having a curved surface shape between the bottom and the upper part (or the top). The inclined portion of the convex portion 143 can form or constitute the concave portion 141. For example, the inclined portion of the convex portion 143 can be an inclined surface or a curved surface portion. The inclined portion of the convex portion 143 according to one embodiment can have a cross-sectional structure of a Gaussian curve. In this case, the inclined portion of the convex portion 143 can have a tangent slope that gradually increases from the bottom to the upper part and then gradually decreases.

[0045] Referring to FIG. 4, each of the plurality of concave portions 141 according to an embodiment of the present invention can be arranged in parallel so as to have a constant interval along a first direction (e.g., the X-axis direction) and be arranged alternately with each other along a second direction (e.g., the Y-axis direction). Thereby, the light extraction part 140 can include a larger number of concave portions 141 per unit area, thereby improving the external extraction efficiency of the light emitted from the light emitting element 150.

[0046] According to one embodiment, the center (C) of each of the plurality of recesses 141 arranged along the first direction (e.g., X-axis direction) can be arranged or aligned on a first straight line (SL1) parallel to the first direction (e.g., X-axis direction). And the center (C) of each of the plurality of recesses 141 arranged along the second direction (e.g., Y-axis direction) can be positioned or aligned on a second straight line (SL2) parallel to the second direction (e.g., Y-axis direction).

[0047] According to another embodiment, the plurality of recesses 141 can be arranged in a grid pattern. Each of the plurality of recesses 141 arranged on the even-numbered horizontal lines parallel to the first direction (e.g., X-axis direction) can be arranged between the plurality of recesses 141 arranged on the adjacent odd-numbered horizontal lines along the second direction (e.g., Y-axis direction). Thereby, the plurality of recesses 141 can be positioned or aligned on a zigzag line (ZL) having a zigzag shape along the first direction (e.g., X-axis direction).

[0048] According to one embodiment, the centers (C) of three adjacent recesses 141 can form a triangular state (TS). Also, the centers (C) of the six recesses 141 arranged around or surrounding one recess 141 can form a planar hexagonal state (HS). For example, each of the plurality of recesses 141 can be arranged or arrayed in a honeycomb structure, a honeycomb structure, or a circle structure.

[0049] According to one embodiment of the present invention, when the plurality of recesses 141 are arranged in a honeycomb structure, the diagonal center lines (DCL1, DCL2) passing through the centers (C) of the recesses 141 arranged along the diagonal directions (DD1, DD2) between the first direction (e.g., X-axis direction) and the second direction (e.g., Y-axis direction) can be inclined from each of the first straight line (SL1) and the second straight line (SL2). For example, the first angle (Φ1) between the diagonal center line (DCL1, DCL2) and the first straight line (SL1) can be 30 degrees, and the second angle (Φ2) between the diagonal center line (DCL1, DCL2) and the second straight line (SL2) can be 60 degrees.

[0050] According to an embodiment of the present invention, the pitch (or interval) (L1) between the recesses 141 disposed in each of the plurality of sub-pixels (SP) constituting one pixel (P) may be the same as or different from each other. The pitch (L1) between the recesses 141 may be the distance (or interval) between the central portions (C) of two adjacent recesses 141.

[0051] In one embodiment, the pitch (L1) between the recesses 141 disposed in each of the red sub-pixel, the green sub-pixel, the blue sub-pixel, and the white sub-pixel may be the same as or different from each other. For example, the pitch (L1) between the recesses 141 disposed in the green sub-pixel may be different from the pitch between the recesses 141 disposed in the blue sub-pixel.

[0052] In other embodiments, the number and / or density of the recesses 141 disposed in each of the red sub-pixel, the green sub-pixel, the blue sub-pixel, and the white sub-pixel may be the same as or different from each other. For example, the number and / or density of the recesses 141 disposed in each of the white sub-pixel and the green sub-pixel may be different from the number and / or density of the recesses 141 disposed in the red sub-pixel and the blue sub-pixel.

[0053] The convex portion 143 may be configured to individually surround each of the plurality of recesses 141. Accordingly, the light extraction unit 140 may include the plurality of recesses 141 surrounded by the convex portion 143. The convex portion 143 surrounding one recess 141 may have a planar hexagonal form (or honeycomb form), but embodiments of the present invention are not limited thereto.

[0054] Referring to FIG. 3 again, the light emitting element 150 may be disposed on the light extraction unit 140 that overlaps the light emitting region (EA). The light emitting element 150 may be configured to emit light toward the first substrate 100 according to the bottom emission method, but embodiments of the present invention are not limited thereto. The light emitting element 150 according to one embodiment may include an anode electrode (AE), a light emitting layer (EL), and a cathode electrode (CE).

[0055] The anode electrode (AE) is formed on the overcoat layer 130 and can be electrically connected to the source electrode (or drain electrode) of the driving thin-film transistor. The anode electrode (AE) can extend from the light-emitting region (EA) to the circuit region (CA). One end of the anode electrode (AE) can be electrically connected to the source electrode (or drain electrode) of the driving thin-film transistor through a driving contact hole in the circuit region (CA).

[0056] Since the anode electrode (AE) is in direct contact with the light extraction part 140, it can have a shape following the shape of the light extraction part 140. Since the anode electrode (AE) is formed (or deposited) on the overcoat layer 130 to have a relatively thin thickness, it can have a surface shape following the surface shape (Morphology) of the light extraction part 140 including the convex part 143 and the plurality of concave parts 141 as it is. For example, the anode electrode (AE) can have a cross-sectional structure in the same form as the light extraction part 140 by being formed in a conformal form following the surface shape (or morphology) of the light extraction part 140 by a deposition process of a transparent conductive material.

[0057] The light-emitting layer (EL) is formed on the anode electrode (AE) and can be in direct contact with the anode electrode (AE). The light-emitting layer (EL) is formed (or deposited) on the anode electrode (AE) to have a relatively thick thickness with respect to the anode electrode (AE), so that it can have a surface shape different from the surface shape of each of the plurality of concave parts 141 and the convex part 143 or the surface shape of the first electrode (E1). For example, the light-emitting layer (EL) can have a cross-sectional structure different from that of the anode electrode (AE) by being formed in a non-conformal form that does not follow the surface shape (or morphology) of the anode electrode (AE) as it is by a deposition process.

[0058] The light-emitting layer (EL) according to an embodiment can have a thickness that gradually increases towards the bottom surface of the convex portion 143 or the concave portion 141. For example, the light-emitting layer (EL) can be formed with a first thickness on the top of the convex portion 143, a second thickness thicker than the first thickness can be formed on the bottom surface of the concave portion 141, and can be formed to have a third thickness thinner than the first thickness on the inclined surface (or curved surface portion) of the convex portion 143. Here, each of the first to third thicknesses can correspond to the shortest distance between the anode electrode (AE) and the cathode electrode (CE).

[0059] The light-emitting layer (EL) according to an embodiment can include two or more organic light-emitting layers for emitting white light. As an example, the light-emitting layer (EL) can include a first organic light-emitting layer and a second organic light-emitting layer for emitting white light by mixing a first light and a second light. For example, the first light-emitting layer can include any one of a blue organic light-emitting layer, a green organic light-emitting layer, a red organic light-emitting layer, a yellow organic light-emitting layer, and a yellow-green organic light-emitting layer for emitting the first light. For example, the second organic light-emitting layer can include an organic light-emitting layer that emits a second light for realizing white light by mixing with the first light among a blue organic light-emitting layer, a green organic light-emitting layer, a red organic light-emitting layer, a yellow organic light-emitting layer, and a yellow-green organic light-emitting layer. The light-emitting layer (EL) according to another embodiment can include any one of a blue organic light-emitting layer, a green organic light-emitting layer, and a red organic light-emitting layer. Further, the light-emitting layer (EL) can include a charge generation layer interposed between the first organic light-emitting layer and the second organic light-emitting layer.

[0060] The cathode electrode (CE) is formed on the light-emitting layer (EL) and can be in direct contact with the light-emitting layer (EL). The cathode electrode (CE) can be formed (or deposited) on the light-emitting layer (EL) so as to have a relatively thin thickness compared to the light-emitting layer (EL). By forming (or depositing) the cathode electrode (CE) on the light-emitting layer (EL) so as to have a relatively thin thickness, it can have a surface shape that exactly follows the surface shape of the light-emitting layer (EL). For example, the cathode electrode (CE) can have the same cross-sectional structure as the light-emitting layer (EL) or a different cross-sectional structure from the light extraction unit 140 by being formed in an isometric form that exactly follows the surface shape (or morphology) of the light-emitting layer (EL) through a deposition process.

[0061] The cathode electrode (CE) according to one embodiment can include a metal substance with a high reflectivity in order to reflect the light emitted from the light-emitting layer (EL) and incident thereon toward the first substrate 100. For example, the cathode electrode (CE) can include a single-layer structure or a multi-layer structure composed of any one substance selected from aluminum (Al), silver (Ag), molybdenum (Mo), gold (Au), magnesium (Mg), calcium (Ca), or barium (Ba) or two or more alloy substances. The cathode electrode (CE) can include an opaque conductive substance with high reflectivity.

[0062] Such a light-emitting element 150 can emit light and release light by the current supplied by the pixel circuit. The concave portion 141 or the convex portion 143 of the light extraction unit 140 increases the external extraction efficiency of the light emitted by the light-emitting layer (EL) by changing the path of the light emitted by the light-emitting layer (EL) to the light-emitting surface (or light extraction surface). For example, the convex portion 143 can prevent or minimize the decrease in the light extraction efficiency due to the light that is emitted from the light-emitting element 150 and cannot travel to the light-emitting surface and is repeatedly totally reflected between the anode electrode (AE) and the cathode electrode (CE) of the light-emitting element 150 and is confined within the light-emitting element 150. Thereby, the light-emitting display device according to one embodiment of the present invention can improve the light extraction efficiency of the light emitted by the light-emitting element 150.

[0063] The light-emitting display device according to an embodiment of the present invention may further include a bank 170. The bank 170 can be provided on the overcoat layer 130. The bank 170 can be formed of an organic material such as a benzocyclobutene (BCB)-based resin, an acrylic resin, or a polyimide resin.

[0064] The bank 170 can be provided to cover an edge of the anode electrode (AE) extending over the circuit region (CA) on the overcoat layer 130. The light-emitting region (EA) defined by the bank 170 can have a size that is planar-ly narrower than the region of the light extraction part 140.

[0065] The light-emitting layer (EL) of the light-emitting element 150 can be formed on the anode electrode (AE), the bank 170, and a step portion between the anode electrode (AE) and the bank 170. In this case, when the light-emitting layer (EL) is formed with a relatively thin thickness at the step portion between the anode electrode (AE) and the bank 170, the cathode electrode (CE) may be in electrical contact (or short-circuited) with the anode electrode (AE). In order to avoid such a problem, an end (or the outermost bank line) of the bank 170 adjacent to the light-emitting region (EA) can be arranged to cover an edge portion of the light extraction part 140. Therefore, an electrical contact (or short circuit) between the anode electrode (AE) and the cathode electrode (CE) can be prevented by an end of the bank 170 arranged at the step portion between the anode electrode (AE) and the bank 170.

[0066] The light-emitting display device according to an embodiment of the present invention may further include a color filter 180.

[0067] The color filter 180 can be arranged between the first substrate 100 and the overcoat layer 130 so as to overlap at least one light-emitting region (EA). The color filter 180 according to an embodiment can be arranged under the overcoat layer 130 so as to overlap the light-emitting region (EA).

[0068] The color filter 180 can have a size larger than that of the light emitting region (EA). For example, the color filter 180 can have a size larger than the light emitting region (EA) and smaller than the light extraction part 140, but is not limited thereto. The color filter 180 can have a size larger than the light extraction part 140. For example, when the color filter 180 has a size larger than the light extraction part 140, light leakage in which internal light travels toward adjacent sub-pixels (SP) can be reduced or minimized.

[0069] The color filter 180 according to one embodiment can include a color filter that transmits only the wavelength of the hue set for the sub-pixel (SP) among the light emitted (or extracted) from the light emitting element 150 toward the first substrate 100. For example, the color filter 180 can transmit red, green, or blue wavelengths. When one pixel (P) is composed of adjacent first to fourth sub-pixels (SP1 to SP4), the color filter layer provided in the first sub-pixel can include a red color filter, the color filter layer provided in the second sub-pixel can include a green color filter, and the color filter layer provided in the third sub-pixel can include a blue color filter, respectively. The fourth sub-pixel can not include a color filter layer or can include a transparent substance for step compensation, thereby emitting white light.

[0070] The light emitting display device according to an embodiment of the present invention can further include a sealing layer 200.

[0071] The sealing layer 200 can be provided on the first substrate 100 so as to cover the light emitting element 150. The sealing layer 200 can be provided on the first substrate 100 so as to cover the cathode electrode (CE). The sealing layer 200 can protect the thin film transistor, the light emitting layer (EL), etc. from external impacts, and can prevent oxygen or / and moisture and further foreign substances (particles) from penetrating into the cathode electrode (CE) and the light emitting layer (EL).

[0072] The encapsulation layer 200 according to one embodiment can include at least one inorganic encapsulation layer and at least one organic encapsulation layer. The organic encapsulation layer can be expressed as a foreign matter cover layer.

[0073] The encapsulation layer 200 according to other embodiments can be changed to a filling material that entirely surrounds the display area. In this case, the second substrate 300 can be bonded to the first substrate 100 through the filling material. The filling material can include a getter material that absorbs oxygen or / and moisture, etc.

[0074] The second substrate 300 can be bonded to the encapsulation layer 200. The second substrate 300 can be made of a plastic material, a glass material, or a metal material. For example, when the encapsulation layer 200 includes a plurality of inorganic encapsulation layers, the second substrate 300 can be omitted.

[0075] Optionally, when the encapsulation layer 200 is changed to a filling material, the second substrate 300 can be bonded to the filling material. In this case, the second substrate 300 can be made of a plastic material, a glass material, or a metal material.

[0076] Referring back to FIG. 2, the first to fourth sub-pixels (SP1 to SP4) can be arranged adjacent to each other along the first direction (e.g., the X-axis direction). Then, between the first sub-pixel (SP1) and the second sub-pixel (SP2), and between the third sub-pixel (SP3) and the fourth sub-pixel (SP4), two data lines (DL) extending along the second direction (e.g., the Y-axis direction) can be arranged parallel to each other. On one side of the first sub-pixel (SP1) or the fourth sub-pixel (SP4), a pixel power line (VDDL) extending along the second direction (e.g., the Y-axis direction) can be arranged. Between the second sub-pixel (SP2) and the third sub-pixel (SP3), a reference line (RL) extending along the second direction (e.g., the Y-axis direction) can be arranged. The reference line (RL) can also be used as a sensing line for externally sensing the characteristic changes of the driving thin film transistor arranged in the circuit region (CA) and / or the characteristic changes of the light emitting element during the sensing driving mode of the pixel (P). Under each circuit region (CA) of the first to fourth sub-pixels (SP1 to SP4), a gate line (GL) extending along the first direction (X) can be arranged.

[0077] Each of the first to fourth sub-pixels (SP1 to SP4) can include a pixel circuit in the circuit region (CA). The pixel circuit can be connected to the gate line (GL), the data line (DL), the reference line (RL), and the pixel power line (VDDL). Such a pixel circuit can control the current flowing through the light emitting element 150 by the data signal from the data line (DL) in response to the scan pulse from the gate line (GL) based on the pixel power supplied from the pixel power line (VDDL). The pixel circuit can include at least one or more transistors and capacitors. Hereinafter, with reference to FIG. 5, the pixel circuit of the sub-pixel will be specifically described.

[0078] FIG. 5 is a circuit diagram showing an example of a sub-pixel.

[0079] Referring to FIG. 5, each of the first to fourth sub-pixels (SP1 to SP4) can be provided with a pixel circuit including a first switching transistor (TR1), a second switching transistor (TR2), a driving transistor (DTR), a capacitor (Cst), and a light emitting element (OLED).

[0080] The first switching transistor (TR1) serves to supply the data voltage (Vdata) supplied from the data line (DL) to the driving transistor (DTR). Specifically, the first switching transistor (TR1) can charge the capacitor (Cst) with the data voltage (Vdata) supplied from the data line (DL). For this purpose, the gate electrode of the first switching transistor (TR1) can be connected to the gate line (GL), and the first electrode can be connected to the data line (DL). Also, the second electrode of the first switching transistor (TR1) can be connected to one end of the capacitor (Cst) and the gate electrode of the driving transistor (DTR).

[0081] The first switching transistor (TR1) can be turned on in response to the scan signal (Scan) applied via the gate line (GL). When the first switching transistor (TR1) is turned on, the data voltage (Vdata) applied via the data line (DL) can be transmitted to one end of the capacitor (Cst).

[0082] The second switching transistor (TR2) serves to supply the reference voltage (Vref) supplied from the reference line (RL) to the driving transistor (DTR). Specifically, the gate electrode of the second switching transistor (TR2) can be connected to the gate line (GL), and the first electrode can be connected to the reference line (RL). Also, the second electrode of the second switching transistor (TR2) can be connected to the source electrode of the driving transistor (DTR) and the other end of the capacitor (Cst).

[0083] The first switching transistor (TR2) can be turned on in response to a scan signal (Scan) applied via a gate line (GL). When the second switching transistor (TR2) is turned on, a reference voltage (Vref) applied via a reference line (RL) can be transmitted to the other end of the capacitor (Cst). Also, the reference voltage (Vref) can be applied to the source electrode of the driving transistor (DTR).

[0084] The capacitor (Cst) serves to maintain the data voltage (Vdata) supplied to the driving transistor (DTR) for one frame. Specifically, one electrode of the capacitor (Cst) can be connected to the gate electrode of the driving transistor (DTR), and the other electrode can be connected to the source electrode of the driving transistor (DTR). The capacitor (Cst) can store a voltage corresponding to the data voltage (Vdata) transmitted via the first switching transistor (TR1), and turn on the driving transistor (DTR) with the stored voltage.

[0085] The driving transistor (DTR) serves to generate a data current from a first power source (EVDD) supplied from a pixel power line (VDDL) and supply it to the anode electrodes of sub-pixels (SP1, SP2, SP3, SP4). Specifically, the gate electrode of the driving transistor (DTR) can be connected to one end of the capacitor (Cst), and the drain electrode can be connected to the pixel power line (VDDL). Also, the source electrode of the driving transistor (DTR) can be connected to the anode electrode of the light-emitting element (OLED).

[0086] The driving transistor (DTR) can be turned on by the data voltage charged in the capacitor (Cst). When the driving transistor (DTR) is turned on, the first power source (EVDD) applied via the pixel power line (VDDL) can be transmitted to the anode electrode of the light-emitting element (OLED).

[0087] The light-emitting element (OLED) can have the anode electrode connected to the source electrode of the driving transistor (DTR) and the cathode electrode connected to the common power supply (EVSS). The light-emitting element (OLED) can emit light corresponding to the driving current generated by the driving transistor (DTR).

[0088] The light-emitting display device according to an embodiment of the present invention can include a plurality of laser cutting regions that cut the connection between at least a part of the pixel power line (VDDL), the data line (DL), and the reference line (RL) and the driving transistor (DTR) when a defect occurs in a part of the circuit elements.

[0089] Specifically, the pixel circuit can be provided with a first laser cutting region (LCA1) in the pixel power connection pattern connected to the pixel power line (VDDL) and the drain electrode of the driving transistor (DTR). When a defect occurs in a part of the circuit elements, by cutting the pixel power connection pattern arranged in the first laser cutting region (LCA1) with a laser, the pixel power line (VDDL) and the circuit element with the defect can be electrically separated.

[0090] The pixel circuit can be provided with a second laser cutting region (LCA2) in the data connection pattern connected to the data line (DL) and the first electrode of the first switching transistor (TR1). When a defect occurs in a part of the circuit elements, by cutting the data connection pattern arranged in the second laser cutting region (LCA2) with a laser, the data line (DL) and the circuit element with the defect can be electrically separated.

[0091] The pixel circuit can be provided with a third laser cutting area (LCA3) in a reference connection pattern connected to a reference line (RL) and a first electrode of a second switching transistor (TR2). When a defect occurs in a part of the circuit element, the reference connection pattern arranged in the third laser cutting area (LCA3) can be cut with a laser, thereby electrically separating the reference line (RL) from the circuit element in which the defect has occurred.

[0092] The light-emitting display device according to an embodiment of the present invention can be formed of a substance that can be cut even with low laser power for a pixel power supply connection pattern provided with a first laser cutting area (LCA1), a data connection pattern provided with a second laser cutting area (LCA2), and a reference connection pattern provided with a third laser cutting area (LCA3). In one example, at least one of the pixel power supply connection pattern, the data connection pattern, and the reference connection pattern can be made of the same substance as the active layer of the driving transistor (DTR) and in the same layer.

[0093] Further, the light-emitting display device according to an embodiment of the present invention can further arrange a contact portion for electrically connecting the light-emitting element 150 and the driving transistor in addition to at least one or more transistors and capacitors in the circuit area (CA). Depending on the positions of the driving transistor and the contact portion, the area of the circuit area (CA) can increase, and thereby the area of the light-emitting area (EA) can be decreased. The light-emitting display device according to an embodiment of the present invention can arrange the contact portion so as to minimize the area of the circuit area (CA).

[0094] Hereinafter, with reference to FIGS. 6 to 15, the driving transistor, the pixel power supply connection pattern, the data connection pattern, the reference connection pattern, and the plurality of contact portions provided in the circuit area (CA) will be specifically described.

[0095] FIG. 6A is a plan view showing a driving transistor, a pixel power supply connection pattern, a data connection pattern, a reference connection pattern, and a contact portion provided in the circuit region of FIG. 2, and FIGS. 6B to 6D are plan views showing a part of the configuration shown in FIG. 6A. FIG. 7 is a cross-sectional view taken along line II-II' of the driving transistor and the pixel power supply connection pattern shown in FIG. 6A, and FIG. 8 is a cross-sectional view showing an example of cutting the pixel power supply connection pattern shown in FIG. 6A with a laser. FIG. 9 is a plan view for explaining the opening region of the holes provided in the driving contact portion and the well welding contact portion shown in FIG. 6A, and FIG. 10 is a cross-sectional view taken along line III-III' of the driving contact portion and the well welding contact portion shown in FIG. 6A. FIG. 11 is a cross-sectional view taken along line IV-IV' of the driving contact portion and the data connection pattern shown in FIG. 6A, and FIG. 12 is a cross-sectional view showing an example of cutting the data power supply connection pattern shown in FIG. 6A with a laser. FIG. 13 is a cross-sectional view taken along line V-V' of the well welding contact portion and the reference connection pattern shown in FIG. 6A, FIG. 14 is a cross-sectional view showing an example of irradiating the well welding contact portion shown in FIG. 6A with a laser, and FIG. 15 is a cross-sectional view showing an example of cutting the reference connection pattern shown in FIG. 6A with a laser.

[0096] In FIGS. 7, 8, 10 to 15, for convenience of explanation, only the first substrate 100, the pixel circuit layer 110, the overcoat layer 130, and the anode electrodes (AE1, AE2) are shown, but the present invention is not limited thereto, and at least one of the light emitting layer (EL), the cathode electrode (CE), the sealing layer 200, and the second substrate 300 may be laminated on the circuit region (CA).

[0097] Referring to FIGS. 6A and 7, each of the first to fourth sub-pixels (SP1 to SP4) may include a driving transistor (DTR) disposed in the circuit region (CA), a light emitting region (EA), and a pixel power supply connection pattern (VDDCP) disposed between the driving transistors (DTR). The driving transistor (DTR) is provided in the pixel circuit layer 110 and may include an active layer (ACT) and a gate electrode (GE).

[0098] On the first substrate 100, a light-shielding layer (LS) can be provided. The light-shielding layer (LS) can minimize or prevent the change in the threshold voltage of the driving transistor (DTR) due to external light. The light-shielding layer (LS) can be made of a conductive material, for example, a single layer or a multilayer formed of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof. In such a case, a buffer layer 112 can be provided between the light-shielding layer (LS) and the active layer (ACT). The buffer layer 112 is an inorganic insulating layer and can be formed of a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a multilayer thereof.

[0099] An active layer (ACT) can be provided on the buffer layer 112. The active layer (ACT) can include a first active layer (ACT1) and a second active layer (ACT2). The first active layer (ACT1) is a semiconductor layer and can be composed of a semiconductor material based on any one of amorphous silicon, polycrystalline silicon, oxides, and organic substances. As an example, the first active layer (ACT1) can be composed of indium gallium zinc oxide (Indio Gallium Zinc Oxide, IGZO).

[0100] The second active layer (ACT2) can be provided on the first active layer (ACT1). The second active layer (ACT2) is a conductive layer and can be any one of metals such as aluminum (Al), gold (Au), silver (Ag), copper (Cu), tungsten (W), molybdenum (Mo), chromium (Cr), tantalum (Ta), titanium (Ti), or an alloy thereof. As an example, the second active layer (ACT2) can be composed of molybdenum titanium (MoTi).

[0101] The second active layer (ACT2) can be provided in a region excluding the channel region (CH) of the driving transistor (DTR) on the first active layer (ACT1). That is, the active layer (ACT) can have only the first active layer (ACT1) provided in the channel region (CH) of the driving transistor (DTR). On the other hand, the active layer (ACT) can be provided in a structure in which the first active layer (ACT1) and the second active layer (ACT2) are stacked in the source region (S) and the drain region (D) of the driving transistor (DTR). Here, the second active layer (ACT2) provided in the source region (S) of the driving transistor (DTR) can correspond to the source electrode of the driving transistor (DTR), and the second active layer (ACT2) provided in the drain region (D) of the driving transistor (DTR) can correspond to the drain electrode of the driving transistor (DTR).

[0102] The gate insulating layer 114 can be provided on the active layer (ACT). The gate insulating layer 114 can be patterned only on the active layer (ACT), or can also be formed over the entire front surface of the first substrate 100 or the buffer layer 112 including the active layer (ACT). The gate insulating layer 114 is an inorganic insulating layer and can be formed of, for example, a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a multilayer thereof.

[0103] The gate electrode (GE) can be provided on the gate insulating layer 114 so as to overlap the channel region (CH) of the driving transistor (DTR). The gate electrode (GE) can be formed of a single layer or a multilayer made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) or an alloy thereof.

[0104] The passivation layer 118 can be provided to cover a pixel circuit including a driving transistor (DTR). The passivation layer 118 is an inorganic insulating layer and can be made of, for example, a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a multilayer film thereof.

[0105] The overcoat layer 130 is provided on the pixel circuit layer 110 on which the driving transistor (DTR) is formed and can flatten the step caused by the driving transistor (DTR).

[0106] On the other hand, the pixel power connection pattern (VDDCP) can be provided between the light-emitting region (EA) and the driving transistor (DTR) arranged in the circuit region (CA). The pixel power connection pattern (VDDCP) is electrically connected to the pixel power line (VDDL) and can transmit the pixel power supplied from the pixel power line (VDDL) to the driving transistor (DTR). Such a pixel power connection pattern (VDDCP) can include a first pixel power connection pattern (VDDCP1) and a second pixel power connection pattern (VDDCP2).

[0107] The first pixel power connection pattern (VDDCP1) is electrically connected to a pixel power line (VDDL) extending along the second direction (for example, the Y-axis direction) and can extend in the first direction (for example, the X-axis direction) between the light-emitting region (EA) and the driving transistor (DTR).

[0108] In one embodiment, the first pixel power connection pattern (VDDCP1) can be made of the same material in the same layer as the gate electrode (GE) of the driving transistor (DTR). In this case, the first pixel power connection pattern (VDDCP1) can be electrically connected through a contact hole (not shown) that penetrates the pixel power line (VDDL) and the buffer layer 112 formed in the same layer as the light-shielding layer (LS).

[0109] The second pixel power connection pattern (VDDCP2) is disposed between the first pixel power connection pattern (VDDCP1) and the driving transistor (DTR), and can electrically connect the first pixel power connection pattern (VDDCP1) and the driving transistor (DTR).

[0110] The second pixel power connection pattern (VDDCP2) according to an embodiment of the present invention is characterized in that it is formed of the same material in the same layer as the active layer (ACT) of the driving transistor (DTR). Specifically, the second pixel power connection pattern (VDDCP2) can have a double-layer structure including a first layer (VDDCP2-1) and a second layer (VDDCP2-2). The first layer (VDDCP2-1) of the second pixel power connection pattern (VDDCP2) can be formed of the same material in the same layer as the first active layer (ACT1) of the driving transistor (DTR). The first layer (VDDCP2-1) of the second pixel power connection pattern (VDDCP2) can be composed of a semiconductor material, for example, indium gallium zinc oxide (IGZO). Also, the second layer (VDDCP2-2) of the second pixel power connection pattern (VDDCP2) can be formed of the same material in the same layer as the second active layer (ACT2) of the driving transistor (DTR). The second layer (VDDCP2-2) of the second pixel power connection pattern (VDDCP2) can be composed of a conductive material, for example, molybdenum titanium (MoTi).

[0111] In one embodiment, as shown in FIG. 7, the second pixel power connection pattern (VDDCP2) can extend in the second direction (e.g., the Y-axis direction) from the first active layer (ACT1) and the second active layer (ACT2) of the driving transistor (DTR). And the second pixel power connection pattern (VDDCP2) can be electrically connected to the first pixel power connection pattern (VDDCP1) through a third contact hole (CH3) that penetrates the gate insulating layer 114 at one end.

[0112] Such a pixel power connection pattern (VDDCP) can include a first laser cutting area (LCA1). Specifically, the second pixel power connection pattern (VDDCP2) can include a first laser cutting area (LCA1) disposed between the first pixel power connection pattern (VDDCP11) and an active layer (ACT) disposed in the drain area (D) of the driving transistor (DTR). According to an embodiment of the present invention, when a defect occurs in a part of the circuit elements, the second pixel power connection pattern (VDDCP2) of the first laser cutting area (LCA1) is cut by a laser as shown in FIG. 8, so that the defective circuit elements and the light-emitting elements (OLED) can be electrically separated. When the second pixel power connection pattern (VDDCP2) provided in the first laser cutting area (LCA1) is cut by a laser, the driving transistor (DTR) can be electrically separated from the pixel power line (VDDL) as shown in FIG. 8. As a result, the first power supply (EVDD) applied from the pixel power line (VDDL) may not be transmitted to the driving transistor (DTR).

[0113] On the other hand, each of the first to fourth sub-pixels (SP1 to SP4) can further include two contact portions, a data connection pattern (DCP), and a reference connection pattern (RCP) for electrically connecting the light-emitting element 150 and the driving transistor (DTR) to the circuit area (CA). The contact portion can include a driving contact portion (DCT) and a well-welding contact portion (WCT).

[0114] The driving contact portion (DCT) corresponds to a contact portion for electrically connecting the light-emitting element 150 disposed in the light-emitting area (EA) of a specific sub-pixel and the driving transistor (DTR) disposed in the circuit area (CA) of the specific sub-pixel.

[0115] Specifically, the plurality of pixels (P) can include a first pixel (P1) and a second pixel (P2) arranged adjacent to each other. The second pixel (P2) can be arranged adjacent to the first pixel (P1) in a second direction (e.g., the Y-axis direction). Each of the first pixel (P1) and the second pixel (P2) can include a plurality of sub-pixels, for example, first to fourth sub-pixels (SP1 to SP4) arranged in a first direction (e.g., the X-axis direction). Each of the first to fourth sub-pixels (SP1 to SP4) can include a light-emitting region (EA) and a circuit region (CA).

[0116] The driving contact portion (DCT) can electrically connect a light-emitting element 150 arranged in the light-emitting region (EA) of a sub-pixel (SP1-1) provided in the first pixel (P1) and a driving transistor (DTR) arranged in the circuit region (CA) of the sub-pixel (SP1-1) provided in the first pixel (P1). Here, the sub-pixel (SP1-1) provided in the first pixel (P1) can be one of the first to fourth sub-pixels (SP1 to SP4) provided in the first pixel (P1).

[0117] The driving contact portion (DCT) can include at least one insulating layer including a first connection electrode (CP1) and a driving contact hole.

[0118] The first connection electrode (CP1) can be electrically connected to the driving transistor (DTR). The first connection electrode (CP1) can include a first electrode pattern (CP1-1) and a second electrode pattern (CP1-2).

[0119] In one embodiment, the first electrode pattern (CP1-1) and the second electrode pattern (CP1-2) of the first connection electrode (CP1) can be provided in one layer and can be provided in the same layer as the gate electrode (GE) of the driving transistor (DTR). A light-shielding layer (LS) for blocking external light incident on the first connection electrode (CP1) can be provided under the first connection electrode (CP1).

[0120] The first electrode pattern (CP1-1) of the first connection electrode (CP1) can be provided so as to overlap with the drive contact hole. The first electrode pattern (CP1-1) of the first connection electrode (CP1) can be exposed in a region overlapping with the drive contact hole, and can be electrically connected to the light-emitting element 150 of the sub-pixel (SP1-1) provided in the first pixel (P1) via the drive contact portion (DCT), particularly the first anode electrode (AE1).

[0121] Referring to FIGS. 9, 10, and 11, at least one insulating layer including a drive contact hole can be provided on the first electrode pattern (CP1-1) of the first connection electrode (CP1). The at least one insulating layer can include at least one of an organic insulating layer and an inorganic insulating layer. In one example, the organic insulating layer can be the overcoat layer 130, and the inorganic insulating layer can be the passivation layer 118.

[0122] The overcoat layer 130 is provided on the first connection electrode (CP1) and can include a first drive contact hole (DH1) overlapping at least a part of the first connection electrode (CP1), particularly the first electrode pattern (CP1-1). The first drive contact hole (DH1) of the overcoat layer 130 can include a first opening region (OA1) penetrating the overcoat layer 130, a first inclined region (SA1) forming a first inclined surface (S1) in the overcoat layer 130, and a second inclined region (SA2) forming a second inclined surface (S2) in the overcoat layer 130. The first opening region (OA1) of the overcoat layer 130 is formed by a photolithography process using a full-tone photomask, and the first inclined region (SA1) and the second inclined region (SA2) of the overcoat layer 130 can be formed by a photolithography process using a half-tone photomask.

[0123] The first driving contact hole (DH1) of the overcoat layer 130 is provided with a first inclined surface (S1) on a first side facing the welding contact portion (WCT) and a second side opposite to the first side, and a second inclined surface (S2) can be provided on a third side facing the light-emitting region (EA) of the sub-pixel (SP1-1) provided in the first pixel (P1) and a fourth side opposite to the third side. In an overcoat layer 130 according to an embodiment of the present invention, the first inclined surface (S1) and the second inclined surface (S2) formed in the first driving contact hole (DH1) can have different inclination degrees from each other.

[0124] In one embodiment, the first inclination degree (θ1) of the first inclined surface (S1) can be formed to be larger than the second inclination degree (θ2) of the second inclined surface (S2). The inclination degrees of the first inclined surface (S1) and the second inclined surface (S2) can be determined by the width of the halftone photomask. As shown in FIG. 9, the first inclined surface (S1) is formed using a halftone photomask having a third width (W3), and the second inclined surface (S2) can be formed using a halftone mask having a fourth width (W4) larger than the third width (W3). The first inclined surface (S1) can be formed to have a steep inclination degree by using a halftone photomask with a narrow width. On the other hand, the second inclined surface (S2) can be formed to have a gentle inclination degree by using a halftone photomask with a wide width.

[0125] The passivation layer 118 is provided between the overcoat layer 130 and the first connection electrode (CP1), and may include a second drive contact hole (DH2) that overlaps with the first drive contact hole (DH1) of the overcoat layer 130. For example, the first drive contact hole (DH1) may be larger than the second drive contact hole (DH2), and the first and second drive contact holes (DH1, DH2) may overlap with each other. The second drive contact hole (DH2) of the passivation layer 118 may include a third opening region (OA3) that penetrates the passivation layer 118 to expose the first electrode pattern (CP1-1) of the first connection electrode (CP1). The third opening region (OA3) of the passivation layer 118 can be formed through a wet etching process.

[0126] The third opening region (OA3) of the passivation layer 118 is disposed within the first opening region (OA1) of the overcoat layer 130 and may have an area smaller than that of the first opening region (OA1). As an example, the first opening region (OA1) of the overcoat layer 130 may have a rectangular shape having a first width (W1) as shown in FIG. 9, and the third opening region (OA3) of the passivation layer 118 may have a rectangular shape having a second width (W2) smaller than the first width (W1), but is not necessarily limited thereto. The first opening region (OA1) of the overcoat layer 130 and the third opening region (OA3) of the passivation layer 118 can be formed in one of various shapes such as a circular shape, an elliptical shape, and a polygonal shape. On the other hand, the first drive contact hole (DH1) of the overcoat layer 130 can expose a part of the upper surface of the second drive contact hole (DH2) of the passivation layer 118 and the passivation layer 118.

[0127] The first electrode pattern (CP1-1) of the first connection electrode (CP1) can be electrically connected to the first anode electrode (AE1) of the sub-pixel (SP1-1) provided in the first pixel (P1) through a drive contact portion (DCT) composed of the first drive contact hole (DH1) of the overcoat layer 130 and the second drive contact hole (DH2) of the passivation layer 118.

[0128] The sub-pixel (SP1-1) provided in the first pixel (P1) can include a light-emitting element 150 including the first anode electrode (AE1). The first anode electrode (AE1) can include a first light-emitting portion (AE1-1) disposed in the light-emitting region (EA) of the sub-pixel (SP1-1) provided in the first pixel (P1) and a first connection portion (AE1-2) disposed in the circuit region (CA) of the sub-pixel (SP1-1) provided in the first pixel (P1).

[0129] The first connection portion (AE1-2) can protrude from the first light-emitting portion (AE1-1) and extend in the direction of the circuit region (CA), and one end can be provided so as to overlap the drive contact hole. Specifically, the first connection portion (AE1-2) is provided in the drive contact hole composed of the first drive contact hole (DH1) of the overcoat layer 130 and the second drive contact hole (DH2) of the passivation layer 118, and in the drive contact hole, it can contact the first electrode pattern (CP1-1) of the first connection electrode (CP1). Thereby, the first anode electrode (AE1) can be electrically connected to the first connection electrode (CP1).

[0130] On the one hand, as shown in FIG. 6A, the second electrode pattern (CP1-2) of the first connection electrode (CP1) can extend from the first electrode pattern (CP1-1) to the region overlapping with the driving transistor (DTR). The second electrode pattern (CP1-2) of the first connection electrode (CP1) can be provided between the welding contact portion (WCT) and the light-emitting region (EA) provided in the sub-pixel (SP1-1) of the first pixel (P1). That is, the second electrode pattern (CP1-2) of the first connection electrode (CP1) can be provided between the welding contact portion (WCT) and the first light-emitting portion (AE1-1) of the first anode electrode (AE1) provided in the sub-pixel (SP1-1) of the first pixel (P1).

[0131] As shown in FIG. 7, the second electrode pattern (CP1-2) of the first connection electrode (CP1) can be electrically connected to the second active layer (ACT2) disposed in the source region (S) or the drain region (D) through the first contact hole (CH1) penetrating the gate insulating layer 114. As a result, the first anode electrode (AE1) can be electrically connected to the driving transistor (DTR) through the first connection electrode (CP1). Thereby, the first anode electrode (AE1) can receive the supply of the pixel power source from the driving transistor (DTR).

[0132] Referring to FIG. 6A again, the welding contact portion (WCT) corresponds to a contact portion for electrically connecting the light-emitting element 150 disposed in the light-emitting region (EA) of the adjacent sub-pixel disposed adjacent to the specific sub-pixel and the driving transistor (DTR) disposed in the circuit region (CA) of the specific sub-pixel.

[0133] Specifically, the welding contact portion (WCT) can be for electrically connecting a light-emitting element 150 disposed in the light-emitting region (EA) of an adjacent sub-pixel (SP1-2) provided in the second pixel (P2) and a driving transistor (DTR) disposed in the circuit region (CA) of a sub-pixel (SP1-1) including the first pixel (P1). Here, the adjacent sub-pixel (SP1-2) provided in the second pixel (P2) can be one of the first to fourth sub-pixels (SP1 to SP4) provided in the second pixel (P2), and can emit light of the same hue as the sub-pixel (SP1-1) provided in the first pixel (P1).

[0134] In the light-emitting display device according to an embodiment of the present invention, when a defect occurs in the driving transistor of the adjacent sub-pixel (SP1-2) provided in the second pixel (P2), the driving transistor (DTR) of the sub-pixel (SP1-1) provided in the first pixel (P1) and the light-emitting element 150 of the adjacent sub-pixel (SP1-2) can be electrically connected via the welding contact portion (WCT). Thereby, the light-emitting display device according to an embodiment of the present invention can enable the light-emitting element 150 of the adjacent sub-pixel (SP1-2) to operate normally despite a defect in the driving transistor.

[0135] If the driving transistor of the adjacent sub-pixel (SP1-2) provided in the second pixel (P2) is normal, the welding contact portion (WCT) can electrically isolate the light-emitting element 150 of the adjacent sub-pixel (SP1-2) and the driving transistor (DTR) of the sub-pixel (SP1-1) provided in the first pixel (P1). On the other hand, when a defect occurs in the driving transistor of the adjacent sub-pixel (SP1-2) provided in the second pixel (P2), the welding contact portion (WCT) can electrically connect the light-emitting element 150 of the adjacent sub-pixel (SP1-2) and the driving transistor (DTR) of the sub-pixel (SP1-1) provided in the first pixel (P1) via laser irradiation.

[0136] The welding contact portion (WCT) can include at least one insulating layer including a second connection electrode (CP2) and a welding contact hole.

[0137] Referring to FIGS. 9, 10, and 13, the second connection electrode (CP2) can be electrically connected to the driving transistor (DTR) of the sub-pixel (SP1-1) provided in the first pixel (P1). The second connection electrode (CP2) can be provided in a layer different from the first connection electrode (CP1). In one embodiment, the second connection electrode (CP2) can be provided in the same layer as the light-shielding layer (LS). The second connection electrode (CP2) can also be formed in one layer extending from the light-shielding layer (LS), but is not necessarily limited thereto. The second connection electrode (CP2) can be formed in one pattern spaced apart from the light-shielding layer (LS).

[0138] The second connection electrode (CP2) can be provided so as to overlap with the welding contact hole. The second connection electrode (CP2) can be separated from the light-emitting element 150, particularly the second anode electrode (AE2) of the adjacent sub-pixel (SP1-2) provided in the second pixel (P2), with an insulating layer, for example, the buffer layer 112, interposed therebetween in a region overlapping with the welding contact hole. The second connection electrode (CP2) can be electrically separated from the second anode electrode (AE2) of the adjacent sub-pixel (SP1-2).

[0139] At least one insulating layer including the welding contact hole can be provided on the second connection electrode (CP2). The at least one insulating layer can include at least one of an organic insulating layer and an inorganic insulating layer. In one example, the organic insulating layer can be the overcoat layer 130, and the inorganic insulating layer can be the passivation layer 118.

[0140] The overcoat layer 130 is provided on the second connection electrode (CP2) and can include a first welding contact hole (WH1) that overlaps at least a part of the second connection electrode (CP2). The first welding contact hole (WH1) of the overcoat layer 130 can include a second opening region (OA2) that penetrates the overcoat layer 130, a third inclined region (SA3) that forms a third inclined surface (S3) in the overcoat layer 130, and a fourth inclined region (SA4) that forms a fourth inclined surface (S4) in the overcoat layer 130. The second opening region (OA2) of the overcoat layer 130 is formed by a photolithography process using a full-tone photomask, and the third inclined region (SA3) and the fourth inclined region (SA4) of the overcoat layer 130 can be formed by a photolithography process using a half-tone photomask.

[0141] The first welding contact hole (WH1) of the overcoat layer 130 can have a third inclined surface (S3) on a first side facing the driving contact part (DCT) and a second side opposite to the first side, and a fourth inclined surface (S4) can be provided on a third side facing the light-emitting region (EA) of the sub-pixel (SP1-1) provided in the first pixel (P1) and a fourth side opposite to the third side. In the overcoat layer 130 according to an embodiment of the present invention, the third inclined surface (S3) and the fourth inclined surface (S4) formed in the first welding contact hole (WH1) can have different inclination degrees from each other.

[0142] In one embodiment, the third inclination angle (θ3) of the third inclined surface (S3) can be formed to be larger than the fourth inclination angle (θ4) of the fourth inclined surface (S4). The third inclined surface (S3) and the fourth inclined surface (S4) can have their inclination angles determined by the width of the halftone photomask. As shown in FIG. 9, the third inclined surface (S3) is formed using a halftone photomask having a third width (W3), and the fourth inclined surface (S4) can be formed using a halftone mask having a fourth width (W4) wider than the third width (W3). The third inclined surface (S3) can be formed to have a steep inclination angle by using a narrow-width halftone photomask. On the other hand, the fourth inclined surface (S4) can be formed to have a gentle inclination angle by using a wide-width halftone photomask.

[0143] The passivation layer 118 is provided between the overcoat layer 130 and the second connection electrode (CP2), and can include a second welding contact hole (WH2) that overlaps with the first welding contact hole (WH1) of the overcoat layer 130. The second welding contact hole (WH2) of the passivation layer 118 can include a fourth opening region (OA4) that penetrates the passivation layer 118. The fourth opening region (OA4) of the passivation layer 118 can be formed through a wet etching process. Also, the first welding contact hole (WH1) may be larger than the second welding contact hole (WH2) and can be located on the second welding contact hole (WH2).

[0144] The fourth opening region (OA4) of the passivation layer 118 is disposed within the second opening region (OA2) of the overcoat layer 130 and can have an area smaller than that of the second opening region (OA2). As an example, the second opening region (OA2) of the overcoat layer 130 can have a rectangular shape having a first width (W1), as shown in FIG. 9, and the fourth opening region (OA4) of the passivation layer 118 can have a rectangular shape having a second width (W2) narrower than the first width (W1), but is not necessarily limited thereto. The second opening region (OA2) of the overcoat layer 130 and the fourth opening region (OA4) of the passivation layer 118 can be formed in one of various shapes such as circular, elliptical, polygonal, and the like. On the other hand, the first welding contact hole (WH1) of the overcoat layer 130 can expose the second welding contact hole (WH2) of the passivation layer 118 and a part of the upper surface of the passivation layer 118.

[0145] The welding contact hole including the first welding contact hole (WH1) of the overcoat layer 130 and the second welding contact hole (WH2) of the passivation layer 118 can correspond to a welding point where a laser is irradiated to electrically connect the second anode electrode (AE2) and the second connection electrode (CP2) of the adjacent sub-pixel (SP1-2) provided in the second pixel (P2) when a defect occurs in the driving transistor of the adjacent sub-pixel (SP1-2).

[0146] If the driving transistor of the adjacent sub-pixel (SP1-2) provided in the second pixel (P2) is normal, the second connection electrode (CP2) can be electrically separated from the second anode electrode (AE2) of the adjacent sub-pixel (SP1-2) with the buffer layer 112 interposed therebetween in the welding contact hole including the first welding contact hole (WH1) of the overcoat layer 130 and the second welding contact hole (WH2) of the passivation layer 118, as shown in FIGS. 10 and 13.

[0147] On the other hand, when a defect occurs in the driving transistor of the adjacent sub-pixel (SP1-2) provided in the second pixel (P2), the second connection electrode (CP2) can be electrically connected to the second anode electrode (AE2) of the adjacent sub-pixel (SP1-2) that was electrically separated by irradiating the laser to the welding contact hole as shown in FIG. 14.

[0148] Specifically, the sub-pixel (SP1-2) provided in the second pixel (P2) can include a light-emitting element 150 including the second anode electrode (AE2). The second anode electrode (AE2) can include a second light-emitting portion (AE2-1) disposed in the light-emitting region (EA) of the sub-pixel (SP1-2) provided in the second pixel (P2) and a second connection portion (AE2-2) disposed in the circuit region (CA) of the sub-pixel (SP1-1) provided in the first pixel (P1).

[0149] The second connection portion (AE2-2) can protrude from the second light-emitting portion (AE2-1) and extend in the direction of the circuit region (CA) of the sub-pixel (SP1-1) provided in the first pixel (P1). The second connection portion (AE2-2) can be provided so that one end overlaps with the welding contact hole. The second connection portion (AE2-2) of the second anode electrode (AE2) is provided in the welding contact hole including the first welding contact hole (WH1) of the overcoat layer 130 and the second welding contact hole (WH2) of the passivation layer 118, and can be electrically separated from the second connection electrode (CP2) with the buffer layer 112 sandwiched therebetween in the welding contact hole.

[0150] When the laser is irradiated to the welding contact hole, particularly the welding point corresponding to the second welding contact hole (WH2) of the passivation layer 118, the second connection portion (AE2-2) of the second anode electrode (AE2) can contact the second connection electrode (CP2) in the welding contact hole as shown in FIG. 14. Thereby, the second anode electrode (AE2) can be electrically connected to the second connection electrode (CP2).

[0151] On the other hand, the second connection electrode (CP2) can be electrically connected to the driving transistor (DTR) via the first connection electrode (CP1). In one embodiment, the first connection electrode (CP1) can further include a third electrode pattern (CP1-3). The first electrode pattern (CP1-1), the second electrode pattern (CP1-2), and the third electrode pattern (CP1-3) of the first connection electrode (CP1) can be provided in one layer.

[0152] The third electrode pattern (CP1-3) of the first connection electrode (CP1) can protrude from the first electrode pattern (CP1-1) and extend to the lower region of the welding contact portion (WCT) as shown in FIG. 6A. The third electrode pattern (CP1-3) of the first connection electrode (CP1) can be provided between the welding contact portion (WCT) and the light-emitting region (EA) provided in the adjacent sub-pixel (SP1-2) of the second pixel (P2). That is, the third electrode pattern (CP1-3) of the first connection electrode (CP1) can be provided between the welding contact portion (WCT) and the second light-emitting portion (AE2-1) of the second anode electrode (AE2) provided in the adjacent sub-pixel (SP1-2) of the second pixel (P2).

[0153] The third electrode pattern (CP1-3) of the first connection electrode (CP1) can be electrically connected to the second connection electrode (CP2) via a second contact hole (CH2) penetrating the buffer layer 112 as shown in FIG. 10. On the other hand, the second electrode pattern (CP1-2) of the first connection electrode (CP1) can be electrically connected to the second active layer (ACT2) disposed in the source region (S) or the drain region (D) via a first contact hole (CH1) penetrating the gate insulating layer 114 as shown in FIG. 8. As a result, the second anode electrode (AE2) can be electrically connected to the driving transistor (DTR) via the first connection electrode (CP1) and the second connection electrode (CP2). Thereby, the second anode electrode (AE2) can receive the supply of the pixel power source from the driving transistor (DTR) provided in the sub-pixel (SP1-1) of the first pixel (P1).

[0154] On the one hand, the data connection pattern (DCP) can be electrically connected to the data line (DL) and transmit the data voltage (Vdata) supplied from the data line (DL) to the driving transistor (DTR). Such a data connection pattern (DCP) can be electrically connected to the gate electrode (GE) of the driving transistor (DTR) through the fourth contact hole (CH4) at one end and to the data line (DL) through the fifth contact hole (CH5) at the other end, as shown in FIG. 12. In one embodiment, the data connection pattern (DCP) can be electrically connected to the data line (DL) using a separate connection pattern (CP) provided in the fifth contact hole (CH5). Here, the connection pattern (CP) is disposed on the data connection pattern (DCP) and can be formed, for example, in the same layer as the gate electrode (GE) of the driving transistor (DTR).

[0155] The data connection pattern (DCP) according to an embodiment of the present invention is characterized in that it is formed of the same material in the same layer as the active layer (ACT) of the driving transistor (DTR). Specifically, the data connection pattern (DCP) can have a double-layer structure including a first layer (DCP1) and a second layer (DCP2). The first layer (DCP1) of the data connection pattern (DCP) can be formed of the same material in the same layer as the first active layer (ACT1) of the driving transistor (DTR). The first layer (DCP1) of the data connection pattern (DCP) can be composed of a semiconductor material, for example, indium gallium zinc oxide (IGZO). Also, the second layer (DCP2) of the data connection pattern (DCP) can be formed of the same material in the same layer as the second active layer (ACT2) of the driving transistor (DTR). The second layer (DCP2) of the data connection pattern (DCP) can be composed of a conductive material, for example, molybdenum titanium (MoTi).

[0156] The data connection pattern (DCP) can at least partially overlap with the gate line (GL). The data connection pattern (DCP) can form the first switching transistor (TR1) together with the gate line (GL) in the region overlapping with the gate line (GL). Specifically, the first switching transistor (TR1) can include a gate electrode and an active layer. The gate electrode of the first switching transistor (TR1) is formed as a part of the gate line (GL), and the active layer of the first switching transistor (TR1) can be formed as a part of the data connection pattern (DCP) provided in the region overlapping with the gate line (GL). The data connection pattern (DCP) can form a channel region by only including the first layer (DCP1) in the region overlapping with the gate line (GL). On the other hand, the first layer (DCP1) and the second layer (DCP2) are provided on both sides of the channel region of the data connection pattern (DCP), and the source region and the drain region can be formed.

[0157] When the first switching transistor (TR1) is turned on in response to a scan signal applied through the gate line (GL), the data voltage (Vdata) supplied from the data line (DL) can be transmitted to the gate electrode (GE) of the driving transistor (DTR) through the data connection pattern (DCP).

[0158] The data connection pattern (DCP) can include a second laser cutting area (LCA2). Specifically, the data connection pattern (DCP) can include a second laser cutting area (LCA2) disposed between the first switching transistor (TR1) and the data line (DL). In the light-emitting display device according to an embodiment of the present invention, when a defect occurs in a part of the circuit element, the data connection pattern (DCP) of the second laser cutting area (LCA2) is cut with a laser as shown in FIG. 15, so that the defective circuit element and the light-emitting element (OLED) can be electrically separated. When the data connection pattern (DCP) provided in the second laser cutting area (LCA2) is cut with a laser, the driving transistor (DTR) can be electrically separated from the data line (DL) as shown in FIG. 15. As a result, the data voltage (Vdata) supplied from the data line (DL) may not be transmitted to the driving transistor (DTR).

[0159] The reference connection pattern (RCP) can be electrically connected to the reference line (RL) and transmit the reference voltage (Vref) supplied from the reference line (RL) to the driving transistor (DTR). As shown in FIG. 13, this reference connection pattern (RCP) can be electrically connected at one end to the third electrode pattern (CP1-3) of the first connection electrode (CP1) via the second contact hole (CH2). One end of the reference connection pattern (RCP) can be exposed at the second contact hole (CH2), and the third electrode pattern (CP1-3) of the first connection electrode (CP1) can contact one end of the reference connection pattern (RCP) exposed while covering the second contact hole (CH2). Thereby, the reference connection pattern (RCP) can be electrically connected to the third electrode pattern (CP1-3) of the first connection electrode (CP1). On the other hand, the second electrode pattern (CP1-2) of the first connection electrode (CP1) can be electrically connected to the second active layer (ACT2) disposed in the source region (S) via the first contact hole (CH1) penetrating the gate insulating layer 114 as shown in FIG. 7. As a result, the reference connection pattern (RCP) can be electrically connected to the active layer (ACT) disposed in the source region (S) of the driving transistor (DTR) via the first connection electrode (CP1).

[0160] According to an embodiment of the present invention, a reference connection pattern (RCP) is characterized in that it is formed of the same material in the same layer as the active layer (ACT) of a driving transistor (DTR). Specifically, the reference connection pattern (RCP) can have a double-layer structure including a first layer (RCP1) and a second layer (RCP2). The first layer (RCP1) of the reference connection pattern (RCP) can be formed of the same material in the same layer as the first active layer (ACT1) of the driving transistor (DTR). The first layer (RCP1) of the reference connection pattern (RCP) can be composed of a semiconductor material, such as indium gallium zinc oxide (IGZO). Also, the second layer (RCP2) of the reference connection pattern (RCP) can be formed of the same material in the same layer as the second active layer (ACT2) of the driving transistor (DTR). The second layer (RCP2) of the reference connection pattern (RCP) can be composed of a conductive material, such as molybdenum titanium (MoTi).

[0161] The reference connection pattern (RCP) can at least partially overlap with a gate line (GL). The reference connection pattern (RCP) can form a second switching transistor (TR2) together with the gate line (GL) in a region overlapping with the gate line (GL). Specifically, the second switching transistor (TR2) can include a gate electrode and an active layer. The gate electrode of the second switching transistor (TR2) is formed as a part of the gate line (GL), and the active layer of the second switching transistor (TR2) can be formed as a part of the reference connection pattern (RCP) provided in a region overlapping with the gate line (GL). The reference connection pattern (RCP) can form a channel region by including only the first layer (RCP1) in a region overlapping with the gate line (GL). On the other hand, the first layer (RCP1) and the second layer (RCP2) are provided on both sides of the channel region of the reference connection pattern (RCP) to form a source region and a drain region.

[0162] When the second switching transistor (TR2) is turned on in response to a scan signal applied through the gate line (GL), it can transmit the reference voltage (Vref) supplied from the reference line (RL) to the active layer (ACT) disposed in the source region (S) of the drive transistor (DTR) through the reference connection pattern (RCP).

[0163] This reference connection pattern (RCP) can include a third laser cutting area (LCA3). Specifically, the reference connection pattern (RCP) can include a third laser cutting area (LCA3) disposed between the second switching transistor (TR2) and the reference line (RL). In the light-emitting display device according to an embodiment of the present invention, when a defect occurs in a part of the circuit element, the reference connection pattern (RCP) of the third laser cutting area (LCA3) can be cut with a laser as shown in FIG. 15, so that the defective circuit element and the light-emitting element (OLED) can be electrically separated. When the reference connection pattern (RCP) provided in the third laser cutting area (LCA3) is cut with a laser, as shown in FIG. 15, the drive transistor (DTR) can be electrically separated from the reference line (RL). As a result, the reference voltage (Vref) supplied from the reference line (RL) may not be transmitted to the drive transistor (DTR).

[0164] The light-emitting display device according to an embodiment of the present invention can be formed of a material that can be cut even with a low laser power for at least one of a second pixel power supply connection pattern (VDDCP2), a data connection pattern (DCP), and a reference connection pattern (RCP). In one embodiment, at least one of the second pixel power supply connection pattern (VDDCP2), the data connection pattern (DCP), and the reference connection pattern (RCP) can include molybdenum titanium (MoTi). Accordingly, the light-emitting display device according to an embodiment of the present invention can cut at least one of the second pixel power supply connection pattern (VDDCP2), the data connection pattern (DCP), and the reference connection pattern (RCP) even with a low laser power. The light-emitting display device according to an embodiment of the present invention enables reduction of laser power.

[0165] In addition, since the laser power for cutting at least one of the second pixel power supply connection pattern (VDDCP2), the data connection pattern (DCP), and the reference connection pattern (RCP) is low in the light-emitting display device according to an embodiment of the present invention, it is possible to prevent the light-emitting element 150 formed on the upper part from being damaged by the laser power.

[0166] In addition, the light-emitting display device according to an embodiment of the present invention can be formed of the same material in the same layer as the active layer (ACT) of the driving transistor (DTR) for at least one of the second pixel power supply connection pattern (VDDCP2), the data connection pattern (DCP), and the reference connection pattern (RCP). Since the vertical separation distance between at least one of the second pixel power supply connection pattern (VDDCP2), the data connection pattern (DCP), and the reference connection pattern (RCP) and the light-emitting element 150 is relatively large in the light-emitting display device according to an embodiment of the present invention, the laser power may not affect the light-emitting element 150.

[0167] In addition, in the light-emitting display device according to an embodiment of the present invention, since at least one of the second pixel power connection pattern (VDDCP2), the data connection pattern (DCP), and the reference connection pattern (RCP) is separated from the light-emitting element 150 by a sufficient distance, it is not necessary to separately provide a layer such as a color filter between the connection pattern and the light-emitting element 150 so that the laser power does not reach the light-emitting element 150.

[0168] In addition, in the light-emitting display device according to an embodiment of the present invention, since the vertical separation distance between at least one of the second pixel power connection pattern (VDDCP2), the data connection pattern (DCP), and the reference connection pattern (RCP) and the light-emitting element 150 is sufficient, the horizontal separation distance can be reduced. As a result, the light-emitting display device according to an embodiment of the present invention can reduce the area of the circuit region (CA) and increase the area of the light-emitting region (EA).

[0169] In addition, in the light-emitting display device according to an embodiment of the present invention, by forming at least one of the second pixel power connection pattern (VDDCP2), the data connection pattern (DCP), and the reference connection pattern (RCP) in the same layer as the active layer (ACT) of the driving transistor (DTR), the design freedom of other wirings can be ensured.

[0170] The light-emitting display device according to an embodiment of the present invention can improve the light extraction efficiency of the light emitted from the light-emitting element layer by providing the light extraction unit 140. As a result, the light-emitting display device according to an embodiment of the present invention can have high light-emitting efficiency even at low power and can reduce power consumption.

[0171] On the one hand, in a light-emitting display device according to an embodiment of the present invention, a driving contact portion (DCT) and a welding contact portion (WCT) can be arranged adjacent to each other in a first direction (e.g., the X-axis direction). Specifically, in a circuit region (CA) provided in one sub-pixel region, the driving contact portion (DCT) and the welding contact portion (WCT) can be arranged adjacent to each other on a first line parallel to the first direction (e.g., the X-axis direction). Each of the driving contact portion (DCT) and the welding contact portion (WCT) can at least partially overlap the first line. Here, the first line can be a line parallel to a second line on which first to fourth sub-pixels (SP1 to SP4) provided in one pixel (P) are arranged. That is, the driving contact portion (DCT) and the welding contact portion (WCT) can be arranged in the same direction as the direction in which the first to fourth sub-pixels (SP1 to SP4) provided in one pixel (P) are arranged.

[0172] In a light-emitting display device according to an embodiment of the present invention, by arranging the driving contact portion (DCT) and the welding contact portion (WCT) adjacent to each other in the first direction (e.g., the X-axis direction), the area of the circuit region (CA) can be reduced. Since the length of the circuit region (CA) in the first direction (e.g., the X-axis direction) is determined by the length of the light-emitting region (EA) in the first direction (e.g., the X-axis direction), it cannot be arbitrarily shortened. Also, when the length of the circuit region (CA) in the first direction (e.g., the X-axis direction) is shortened, the length of the light-emitting region (EA) in the first direction (e.g., the X-axis direction) also becomes shorter, and the area of the light-emitting region (EA) may decrease. Therefore, it is not preferable to reduce the area of the circuit region (CA) by shortening the length of the circuit region (CA) in the first direction (e.g., the X-axis direction).

[0173] On the one hand, the length of the circuit region (CA) in the second direction (e.g., the Y-axis direction) can have an inverse relationship with the length of the light-emitting region (EA) in the second direction (e.g., the Y-axis direction). When the length of the circuit region (CA) in the second direction (e.g., the Y-axis direction) is shortened, the length of the light-emitting region (EA) in the second direction (e.g., the Y-axis direction) can become longer. The light-emitting display device according to an embodiment of the present invention can shorten the length of the circuit region (CA) in the second direction (e.g., the Y-axis direction) by arranging the drive contact portion (DCT) and the welding contact portion (WCT) adjacent to each other in the first direction (e.g., the X-axis direction). Thereby, the light-emitting display device according to an embodiment of the present invention can increase the length of the light-emitting region (EA) in the second direction (e.g., the Y-axis direction) and, as a result, increase the area of the light-emitting region (EA).

[0174] On the other hand, in the light-emitting display device according to an embodiment of the present invention, the inclined surfaces formed in the first drive contact hole (DH1) of the drive contact portion (DCT) and the first welding contact hole (WH1) of the welding contact portion (WCT) can have different inclination degrees from each other.

[0175] Specifically, the first drive contact hole (DH1) of the drive contact portion (DCT) penetrating the overcoat layer 130 has a first inclined surface (S1) on the first side looking at the welding contact portion (WCT) and the second side opposite to the first side, and a third side looking at the light-emitting region (EA) of the sub-pixel (SP1-1) provided in the first pixel (P1) and a second inclined surface (S2) can be provided on the fourth side opposite to the third side. The light-emitting display device according to an embodiment of the present invention can form the first inclination degree (θ1) of the first inclined surface (S1) formed in the first drive contact hole (DH1) to be larger than the second inclination degree (θ2) of the second inclined surface (S2).

[0176] In addition, the first welding contact hole (WH1) of the welding contact part (WCT) penetrating the overcoat layer 130 has a third inclined surface (S3) on a first side facing the driving contact part (DCT) and a second side opposite to the first side, and a third inclined surface (S3) on a third side facing the light emitting region (EA) of the sub-pixel (SP1-1) provided in the first pixel (P1), and a fourth inclined surface (S4) can be provided on a fourth side opposite to the third side. The light emitting display device according to an embodiment of the present invention can form the third inclination degree (θ3) of the third inclined surface (S3) formed in the first welding contact hole (WH1) to be larger than the fourth inclination degree (θ4) of the fourth inclined surface (S4).

[0177] That is, the first driving contact hole (DH1) of the driving contact part (DCT) and the first welding contact hole (WH1) of the welding contact part (WCT) can be formed such that the inclined surface formed between the driving contact part (DCT) and the welding contact part (WCT) has a high inclination degree. Thereby, the light emitting display device according to an embodiment of the present invention can increase the sizes of the first driving contact hole (DH1) of the driving contact part (DCT) and the first welding contact hole (WH1) of the welding contact part (WCT) while arranging the driving contact part (DCT) and the welding contact part (WCT) in a first direction (for example, the X-axis direction).

[0178] The size of the first drive contact hole (DH1) of the drive contact portion (DCT) formed in the overcoat layer 130 and the first welding contact hole (WH1) of the welding contact portion (WCT) can be increased according to the requirements of the manufacturing process. In particular, the size of the first opening region (OA1) of the first drive contact hole (DH1) of the drive contact portion (DCT) and the size of the second opening region (OA2) of the first welding contact hole (WH1) of the welding contact portion (WCT) can each be increased. When the size of the first opening region (OA1) of the first drive contact hole (DH1) of the drive contact portion (DCT) and the size of the second opening region (OA2) of the first welding contact hole (WH1) of the welding contact portion (WCT) each increase, the distance between the first drive contact hole (DH1) of the drive contact portion (DCT) and the first welding contact hole (WH1) of the welding contact portion (WCT) can become shorter. Here, if the minimum distance is not ensured between the halftone mask for forming the inclined surface of the first drive contact hole (DH1) of the drive contact portion (DCT) and the halftone mask for forming the inclined surface of the first welding contact hole (WH1) of the welding contact portion (WCT), the inclined surface may not be formed in the desired shape between the first drive contact hole (DH1) and the first welding contact hole (WH1), and thus it may be difficult to stably form the anode electrodes formed in each of the first drive contact hole (DH1) and the first welding contact hole (WH1).

[0179] When a minimum distance is ensured between a halftone mask for forming an inclined surface of a first driving contact hole (DH1) of a driving contact part (DCT) and a halftone mask for forming an inclined surface of a first welding contact hole (WH1) of a welding contact part (WCT) in order to stably form an anode electrode, the length in a first direction (e.g., X-axis direction) of a region where the driving contact part (DCT) and the welding contact part (WCT) are formed may increase. As the light-emitting display device has a higher resolution, the lengths in the first direction (e.g., X-axis direction) of a light-emitting region (EA) and a circuit region (CA) become shorter. Therefore, the first driving contact hole (DH1) of the driving contact part (DCT) and the first welding contact hole (WH1) of the welding contact part (WCT) cannot be arranged in a row in the first direction (e.g., X-axis direction) and may be arranged in a row in a second direction (e.g., Y-axis direction). In such a case, the area of the light-emitting region (EA) may be decreased due to an increase in the area of the circuit region (CA).

[0180] In a light-emitting display device according to an embodiment of the present invention, when forming the first driving contact hole (DH1) of the driving contact part (DCT) and the first welding contact hole (WH1) of the welding contact part (WCT), by forming the inclined surface between the driving contact part (DCT) and the welding contact part (WCT) to have a high inclination degree, a halftone mask for forming the first inclined surface (S1) of the first driving contact hole (DH1) of the driving contact part (DCT) and a halftone mask for forming the third inclined surface (S3) of the first welding contact hole (WH1) of the welding contact part (WCT) are arranged so that a minimum distance can be ensured therebetween. Thereby, an inclined surface can be formed in a desired shape between the first driving contact hole (DH1) and the first welding contact hole (WH1), and thereby, an anode electrode formed on each of the first driving contact hole (DH1) and the first welding contact hole (WH1) can be stably formed. Further, since it is not necessary to increase the length in the first direction (e.g., the X-axis direction) of the region where the driving contact part (DCT) and the welding contact part (WCT) are formed, the driving contact part (DCT) and the welding contact part (WCT) can be arranged adjacent to each other in the first direction (e.g., the X-axis direction) even in a high-resolution light-emitting display device.

[0181] On the other hand, the first driving contact hole (DH1) of the driving contact part (DCT) and the first welding contact hole (WH1) of the welding contact part (WCT) can be formed such that the inclined surface formed between them and the light-emitting region (EA) provided with the light extraction part 140 has a low inclination degree. Thereby, the light-emitting display device according to an embodiment of the present invention can stably form the light extraction part 140 arranged adjacent to the circuit region (CA). That is, the light-emitting display device according to an embodiment of the present invention can prevent the shape of the light extraction part 140 arranged adjacent to the circuit region (CA) from being deformed and the light extraction efficiency from being reduced.

[0182] In a light-emitting display device according to an embodiment of the present invention, a second anode electrode (AE2) can be formed to cover a third inclined surface (S3) in a first welding contact hole (WH1) of a welding contact portion (WCT). Accordingly, in the light-emitting display device according to an embodiment of the present invention, when the second anode electrode (AE2) is formed, it is possible to prevent an etching solution from penetrating between the third inclined surface (S3) of the overcoat layer 130 and the passivation layer 118.

[0183] The overcoat layer 130 formed between a first driving contact hole (DH1) of a driving contact portion (DCT) and a first welding contact hole (WH1) of a welding contact portion (WCT) can be provided with an edge region of a first connection electrode (CP1) at the bottom as shown in FIG. 10. When the second anode electrode (AE2) does not cover the third inclined surface (S3) in the first welding contact hole (WH1) of the welding contact portion (WCT), the etching solution easily penetrates into the passivation layer 118 when the second anode electrode (AE2) is formed. Here, if there is a shim in the passivation layer 118, the etching solution penetrates into the first connection electrode (CP1) through the shim of the passivation layer 118, and the first connection electrode (CP1) may be damaged.

[0184] In a light-emitting display device according to an embodiment of the present invention, in a first welding contact hole (WH1) of a welding contact portion (WCT), the third inclined surface (S3) of the overcoat layer 130 has a high inclination degree, and the second anode electrode (AE2) is formed to cover the third inclined surface (S3) of the overcoat layer 130, so that it is possible to effectively prevent the etching solution from penetrating between the third inclined surface (S3) of the overcoat layer 130 and the passivation layer 118. Further, in the light-emitting display device according to an embodiment of the present invention, even if there is a shim in the passivation layer 118, it is possible to prevent the etching solution from penetrating into the first connection electrode (CP1) through the shim of the passivation layer 118, and as a result, prevent the first connection electrode (CP1) from being damaged.

[0185] Also, in the light-emitting display device according to an embodiment of the present invention, the first connection electrode (CP1) can be formed so as not to overlap with the third inclined surface (S3) of the overcoat layer 130. Thereby, the light-emitting display device according to an embodiment of the present invention can minimize the generation of a shim in the passivation layer 118.

[0186] By reducing the area of the first connection electrode (CP1) provided under the overcoat layer 130 formed between the first drive contact hole (DH1) of the drive contact part (DCT) and the first welding contact hole (WH1) of the welding contact part (WCT), the step of the passivation layer 118 in the boundary region between the third inclined surface (S3) of the overcoat layer 130 and the passivation layer 118 can be reduced. Thereby, the passivation layer 118 can lower the possibility of a shim occurring in the boundary region with the third inclined surface (S3) of the overcoat layer 130. Even if a shim occurs in the passivation layer 118, the first connection electrode (CP1) is far from the shim of the passivation layer 118, and the penetration of the etching solution is not easy.

[0187] Also, in the light-emitting display device according to an embodiment of the present invention, since the first connection electrode (CP1) has a sufficient distance from the third inclined surface (S3) of the overcoat layer 130, even if an error occurs during the formation of the first drive contact hole (DH1) of the drive contact part (DCT) and the first welding contact hole (WH1) of the welding contact part (WCT), an appropriate separation distance can be ensured with the boundary region between the third inclined surface (S3) of the overcoat layer 130 and the passivation layer 118. Thereby, the light-emitting display device according to an embodiment of the present invention can minimize the damage to the first connection electrode (CP1) by the etching solution.

[0188] In addition, in the light-emitting display device according to an embodiment of the present invention, a second contact hole (CH2) that electrically connects a second connection electrode (CP2) and a first connection electrode (CP1) with a welding contact part (WCT) interposed therebetween, and a first connection electrode (CP1) and a driving transistor (DTR) can be arranged. Thereby, in the structure in which the driving contact part (DCT) and the welding contact part (WCT) are arranged in the first direction (for example, the X-axis direction), the area of the circuit area (CA) can be minimized, and the area of the light-emitting area (EA) can be significantly increased.

[0189] On the other hand, the light-emitting display device according to an embodiment of the present invention can have a light extraction structure that can minimize a rainbow pattern (or rainbow moire pattern) and a circular ring pattern in the emission form that appear when external light is reflected by the light extraction unit 140. Hereinafter, with reference to FIGS. 16A to 16C, a light extraction structure for minimizing the rainbow pattern will be described.

[0190] FIG. 16A is a diagram showing a rotational structure of a pixel-by-pixel light extraction unit, FIG. 16B is an enlarged view showing the light extraction unit configured in the pixel of the j-th column in the i-th row shown in FIG. 16A, and FIG. 16C is an enlarged view showing the light extraction unit configured in the pixel of the j-th column in the i-th row shown in FIG. 16A.

[0191] When external light is incident on the light extraction unit 140 in a non-driven or off state, the light-emitting display device generates reflected light by the convex part 143 of the light extraction unit 140, and this can emit light to the outside through the light-emitting surface due to the birefringence effect of the thin film. Such reflected light can generate a rainbow pattern (or rainbow moire pattern) that has a rainbow color and spreads in a radial form and a circular ring pattern in a radial form due to the difference in refractive angles for each wavelength due to the material characteristics of the light-emitting element 150 and the refractive index difference between layers. For example, the reflected light can generate a radial rainbow pattern and a radial circular ring pattern by the destructive interference and / or constructive interference of light, and can reduce the black visual characteristic.

[0192] In a light-emitting display device according to an embodiment of the present invention, the light extraction unit 140 can be configured to rotate (or horizontally rotate) at a predetermined angle around an arbitrary reference point in order to reduce or minimize the generation of a radial rainbow pattern and a radial circular ring pattern due to the cancellation interference and / or reinforcement interference of the reflected light in each of the plurality of pixels (P). For example, the light extraction unit 140 disposed in one or more of the plurality of pixels (P) can be configured to rotate within the corresponding pixel region in units of one pixel (P) at a rotation angle (Φ3) greater than 0 degrees and less than 60 degrees around an arbitrary reference point. Here, the rotation angle (Φ3) can be the angle between the first tilt line (TL1) and the first straight line (SL1) of the recess 141, or the angle between the second tilt line (TL2) and the second straight line (SL2) of the recess 141. For example, the rotation angles of the light extraction units 140 disposed in each of the plurality of pixels (P) can be set irregularly or randomly along one or more of the first direction (e.g., X-axis direction), the second direction (e.g., Y-axis direction), and the diagonal direction within the range of a rotation angle (Φ3) greater than 0 degrees and less than 60 degrees. For example, the arbitrary reference point can be at an arbitrary position within the light-emitting regions (EA) of the first to fourth sub-pixels (SP1 to SP4) of the pixel (P), or at the center (C) of any one of the plurality of recesses 141.

[0193] Referring to FIG. 16A, a light-emitting display device according to an embodiment of the present invention can include a plurality of pixel blocks (PB). The display area (DA) can be divided or blocked into a plurality of pixel blocks (PB). Each of the plurality of pixel blocks (PB) can include a plurality of pixel groups (PG[1,1] to PG[i,j]). For example, each of the plurality of pixel blocks (PB) can include i×j (or i rows and j columns) pixel groups (PG[1,1] to PG[i,j]).

[0194] The plurality of pixels (P) arranged in the display area (DA) can be grouped into a plurality of pixel groups (PG[1,1] to PG[i,j]). For example, each of the plurality of pixel groups (PG[1,1] to PG[i,j]) can be composed of one pixel (P).

[0195] According to an embodiment of the present invention, one or more of the light extraction units 140 arranged in each pixel (P) of the plurality of pixel groups (PG[1,1] to PG[i,j]) can be configured to rotate at a preset angle around an arbitrary reference point within the corresponding pixel (P). For example, in each of the plurality of pixel groups (PG[1,1] to PG[i,j]), the light extraction units 140 arranged in each of the plurality of sub-pixels (SP) included in the pixel (P) can be configured to rotate at a preset angle around the center of any one of the recesses 141 within the corresponding sub-pixel.

[0196] The rotation angles of the light extraction units 140 arranged in each of the plurality of sub-pixels (SP) included in each pixel (P) of the plurality of pixel groups (PG[1,1] to PG[i,j]) can be the same. For example, the rotation angles of the light extraction units 140 arranged in each of the plurality of sub-pixels (SP) constituting one pixel (P) can be the same. The rotation angles of the light extraction units 140 arranged in each of the plurality of sub-pixels (SP) constituting one pixel (P) can be rotation angles for each pixel. For example, the rotation angle for each pixel of the light extraction unit 140 can mean the rotation angle of the light extraction unit 140 set equally for each of the plurality of sub-pixels (SP) constituting one pixel (P).

[0197] For example, among pixel groups (PG[1,1] to PG[i,j]), the rotation angles of the light extraction units 140 arranged in adjacent pixel groups for each pixel can be different from each other. For example, the rotation angles of the light extraction units 140 arranged in each of the pixel groups (PG[1,1] to PG[i,j]) for each pixel can have a difference of 1 degree or 3 degrees or more from each other. For example, among the pixel groups (PG[1,1] to PG[i,j]), the rotation angles of the light extraction units 140 arranged in one or more non-adjacent pixel groups can be 0 degrees or the same. The rotation angles of the light extraction units 140 arranged in the remaining pixels can be set irregularly or randomly within a range greater than 0 degrees and less than 60 degrees. For example, when the rotation angles of the light extraction units 140 for each pixel between adjacent light extraction units 140 have a difference of 3 degrees or more, the generation of a circular ring pattern in a radial form that occurs together with a radial rainbow pattern can be effectively suppressed or minimized.

[0198] According to an embodiment of the present invention, in each of a plurality of pixel blocks (PB), the rotation angles of the light extraction units 140 arranged in each of i×j pixel groups (PG[1,1] to PG[i,j]) for each pixel block can be different in pixel block units or can be set randomly. For example, among the plurality of pixel blocks (PB), the rotation angles of the light extraction units 140 arranged in pixel blocks directly adjacent along any one of the first direction, the second direction, and the diagonal direction can have asymmetry, irregularity, or randomness. For example, among the plurality of pixel blocks (PB), the rotation angles of the light extraction units 140 arranged in pixel blocks directly adjacent along any one of the first direction, the second direction, and the diagonal direction can be different from each other overall. For example, among the rotation angles of the light extraction units 140 arranged in pixel blocks that are not directly adjacent along any one direction among the first direction, the second direction, and the diagonal direction among the plurality of pixel blocks (PB), some can be 0 degrees or the same.

[0199] For example, as shown in FIGS. 16B and 16C, the rotation angle (θ3) of the light extraction unit 140 disposed in a pixel group (PG[1,j]) of 1×j (or 1 row and j columns) can be different from the rotation angle (θ3) of the light extraction unit 140 disposed in a pixel group (PG[2,j]) of 2×j (or 2 rows and j columns). For example, the rotation angle (θ3) of the light extraction unit 140 disposed in a pixel group (PG[1,j]) of 1×j (or 1 row and j columns) can have a difference of 1 degree or 3 degrees or more from the rotation angle (θ3) of the light extraction unit 140 disposed in a pixel group (PG[2,j]) of 2×j (or 2 rows and j columns). For example, the rotation angle (θ3) of the light extraction unit 140 disposed in a pixel group (PG[1,j]) of 1×j (or 1 row and j columns) shown in FIG. 16B can be 5 degrees. The rotation angle (θ3) of the light extraction unit 140 disposed in a pixel group (PG[2,j]) of 2×j (or 2 rows and j columns) shown in FIG. 16C can be 15 degrees.

[0200] Therefore, in the light-emitting display device according to an embodiment of the present invention, the rotation angles of the light extraction units 140 disposed in respective pixel blocks (PB) can be set to be different or randomly set for each pixel block. Also, in the light-emitting display device according to an embodiment of the present invention, the rotation angles of the light extraction units 140 disposed in respective pixel groups (PG[1,1] to PG[i,j]) included in each of the plurality of pixel blocks (PB) can be set to be different or randomly set for each pixel. Further, in the light-emitting display device according to an embodiment of the present invention, the rotation angles of the light extraction units 140 disposed in respective sub-pixels included in each of the plurality of pixel groups (PG[1,1] to PG[i,j]) can be set to be different or randomly set for each sub-pixel.

[0201] As a result, in the light-emitting display device according to an embodiment of the present invention, the diffraction pattern of the reflected light generated by the reflection at the light extraction unit 140 disposed in each of the plurality of pixels (P) is changed in units of pixels (P). Thereby, the diffraction patterns of the reflected light generated at the light extraction units 140 of the plurality of pixels (P) are canceled or minimized, or due to the irregularity or randomness of the diffraction pattern of the reflected light, the generation of the rainbow pattern of the radiation form of the reflected light and the circular ring pattern of the radiation form can be suppressed or minimized. The light-emitting display device according to an embodiment of the present invention can reduce the degradation of the black visual characteristics generated by the reflection of external light in the non-driven or off state and realize real black.

[0202] The light-emitting display device according to the present invention can be applied to all electronic devices. For example, the light-emitting display device according to this specification can be a mobile device, a video phone, a smart watch, a watch phone, a wearable device, a foldable device, a rollable device, a bendable device, a flexible device, a curved device, an electronic notebook, an e-book, a PMP (portable multimedia player), a PDA (personal digital assistant), an MP3 player, a mobile medical device, a desktop PC, a laptop PC, a netbook computer, a workstation, a navigation device, a vehicle navigation device, a vehicle display device, a television, a wall paper display device, a signage device, a game device, a notebook computer, a monitor, a camera, a video camera, and home appliances, etc.

[0203] The embodiments of the present invention have been described in more detail with reference to the accompanying drawings above. However, the present invention is not necessarily limited to such embodiments, and various modifications can be made and implemented within the scope not departing from the technical idea of the present invention. Therefore, the embodiments disclosed in the present invention are not for limiting the technical idea of the present invention but for explanation purposes, and the scope of the technical idea of the present invention is not limited by such embodiments. Therefore, it must be understood that the embodiments described above are illustrative in all respects and not restrictive. The protection scope of the present invention must be interpreted according to the scope of the claims, and all technical ideas within the equivalent scope should be interpreted as being included in the scope of the rights of the present invention.

Explanation of Reference Numerals

[0204] 100: First substrate 110: Pixel circuit layer LS: Light-shielding layer 112: Buffer layer 118: Passivation layer 130: Overcoat layer 140: Light extraction part 150: Light-emitting element 180: Color filter 200: Encapsulation layer DTR: Driving transistor DCT: Driving contact part WCT: Welding contact part CP1: First connection electrode CP2: Second connection electrode VDDCP: Pixel power connection pattern DCP: Data connection pattern RCP: Reference connection pattern 300: Second substrate

Claims

1. A sub-pixel including a light-emitting region and a circuit region arranged adjacent to each other in a first direction, a driving transistor provided in the circuit region of the sub-pixel and including an active layer and a gate electrode, a light-emitting element provided in the light-emitting region of the sub-pixel and including an anode electrode, a light-emitting layer, and a cathode electrode, a pixel power supply line that supplies a pixel power supply to the driving transistor of the sub-pixel, a pixel power supply connection pattern that connects the pixel power supply line and the driving transistor of the sub-pixel, a driving contact portion provided in the circuit region for electrically connecting the anode electrode of the light-emitting element and the driving transistor, a welding contact portion provided in the circuit region for electrically connecting the anode electrode of a light-emitting element provided in an adjacent sub-pixel arranged adjacent to the sub-pixel and the driving transistor by irradiating a laser, the pixel power supply connection pattern includes a first laser cutting region and is made of the same material in the same layer as the active layer of the driving transistor, the driving transistor is provided between the first laser cutting region and at least one of the driving contact portion and the welding contact portion, a light-emitting display device in which the driving contact portion and the welding contact portion are arranged adjacent to each other in a second direction intersecting the first direction.

2. The pixel power supply connection pattern is a first pixel power supply connection pattern that is electrically connected to the pixel power supply line and extends in the second direction between the light-emitting region and the driving transistor, and a second pixel power supply connection pattern that connects the first pixel power supply connection pattern and the driving transistor. The light-emitting display device according to claim 1.

3. The second pixel power supply connection pattern includes the first laser cutting region and is made of the same material in the same layer as the active layer of the driving transistor. The light-emitting display device according to claim 2.

4. The second pixel power supply connection pattern extends from the active layer of the driving transistor and is electrically connected to the first pixel power supply connection pattern through a first contact hole. The light-emitting display device according to claim 2.

5. The second pixel power supply connection pattern does not overlap with the anode electrode of the light-emitting element. The light-emitting display device according to claim 2.

6. The light-emitting display device according to claim 2, wherein the first pixel power supply connection pattern is made of the same material as the gate electrode of the driving transistor and is in the same layer as the gate electrode of the driving transistor.

7. The light-emitting display device according to claim 1, wherein the active layer includes a first active layer made of a semiconductor material and a second active layer provided on the first active layer and made of a conductive material.

8. The light-emitting display device according to claim 7, wherein the first active layer is made of indium gallium zinc oxide (IGZO), and the second active layer is made of molybdenum titanium (MoTi).

9. A reference line to which a reference voltage is applied, and a reference connection pattern connected to the reference line and transmitting the reference voltage to the driving transistor of the sub-pixel, The light-emitting display device according to claim 1, wherein the reference connection pattern includes a second laser cutting region and is made of the same material as the active layer of the driving transistor and is in the same layer as the active layer of the driving transistor.

10. The light-emitting display device according to claim 9, wherein at least one of the driving contact portion and the welding contact portion is disposed between the second laser cutting region and the driving transistor.

11. The driving contact portion includes a first connection electrode electrically connected to the driving transistor, the welding contact portion is provided in a layer different from the first connection electrode and includes a second connection electrode electrically connected to the driving transistor, The light-emitting display device according to claim 9, wherein the reference connection pattern is electrically connected to the active layer of the driving transistor through at least one of the first connection electrode and the second connection electrode.

12. A data line to which a data voltage is applied, and a data connection pattern connected to the data line and transmitting the data voltage to the driving transistor of the sub-pixel, The light-emitting display device according to claim 1, wherein the data connection pattern includes a third laser cutting region and is made of the same material as the active layer of the driving transistor and is in the same layer as the active layer of the driving transistor.

13. The light-emitting display device according to claim 12, wherein at least one of the driving contact portion and the welding contact portion is disposed between the third laser cutting region and the driving transistor.

14. The light-emitting display device according to claim 12, wherein the data connection pattern is electrically connected to the gate electrode of the driving transistor through a second contact hole at one end and electrically connected to the data line through a third contact hole at the other end.

15. The light-emitting display device according to claim 11, comprising a light-shielding layer provided under the first connection electrode, and the second connection electrode is provided on the same layer as the light-shielding layer.

16. The light-emitting display device according to claim 15, wherein the second connection electrode extends from the light-shielding layer and is formed as one layer.

17. The light-emitting display device according to claim 15, wherein the second connection electrode is formed as one pattern separated from the light-shielding layer.

18. The light-emitting display device according to claim 11, wherein the welding contact portion includes a welding contact hole penetrating the passivation layer, and the second connection electrode is provided to overlap the welding contact hole.

19. The light-emitting display device according to claim 1, wherein the sub-pixel further includes a light extraction portion overlapping the light-emitting region, and the light extraction portion has a bent shape or an uneven shape.

20. The light-emitting display device according to claim 19, wherein the light extraction portion includes a plurality of concave portions and convex portions disposed around each of the plurality of concave portions.

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