Quantum dot hybrid integrated multicolor display and method for manufacturing the same

Abstract

To disclose a quantum dot hybrid integrated multi-color display.SOLUTION: Disclosed is a quantum dot hybrid integrated multi-color display, including a CMOS wafer substrate, anode via holes, and a light-emitting unit. Tungsten holes are formed in the CMOS wafer substrate, the anode via holes are formed in the CMOS wafer substrate, and the anode via holes are electrically connected with a CMOS wafer driving circuit through the tungsten holes. The anode vias are blind vias starting from a surface of the CMOS wafer substrate. The light-emitting unit is disposed on the surface of the anode via hole in the CMOS wafer substrate, and a driving current signal is provided to the light-emitting unit through the anode via hole.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention belongs to the field of microdisplay technology, and particularly relates to a quantum dot hybrid integrated multicolor display and a manufacturing method thereof.

Background Art

[0002] Microdisplays are a visual gateway to the currently popular concept of the "metaverse." However, the mainstream technology currently used in microdisplays is silicon-based liquid crystal. Since liquid crystal displays perform display by switching liquid crystals, they have drawbacks such as slow response speed, difficulty in achieving high resolution, and the screen door effect. It is difficult to wear for a long time and is used in a more advanced "metaverse." Although micro-OLED, that is, silicon-based OLED technology, has entered the mass production stage, it has drawbacks such as low brightness and low luminous efficiency. Microdisplays of micro-LEDs are considered to be the most suitable microdisplays for "metaverse" applications, but colorization remains an intractable problem. Even when applied to conventional displays or when applied to microdisplays with a high pixel density, microdisplays have technical defects that the manufacturing process is complex and the manufacturing yield is low, making them unsuitable for mass production.

[0003] As a result of the search, it was found that a Chinese invention patent of Patent Document 1 published on December 13, 2019 discloses a display device based on a phase change material and quantum dots. The display device includes a display unit. The display unit includes a multicolor quantum dot backlight and a phase change filter. The multicolor quantum dot backlight includes a substrate and multicolor quantum dot light-emitting elements, and the multicolor quantum dot light-emitting elements are arranged on the upper surface of the substrate to emit a plurality of lights. The phase change filter includes an insulating layer, a first F-P resonance cavity, a phase change material layer, and a second F-P resonance cavity arranged in order from bottom to top. By applying a voltage to the phase change material layer to perform electrical stimulation or irradiating with laser light to perform laser stimulation, and using the change in transmittance when the phase change material layer mutually converts between an amorphous state and a crystalline state to filter the multicolor light emitted by the multicolor quantum dot light-emitting elements, monochromatic light with a desired wavelength and intensity is obtained, and further color display is realized. However, the lifespan and efficiency of the blue material in the quantum dot multicolor light still cannot meet the requirements of industrial costs and performance, and the above-mentioned technical problems cannot be solved.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] In view of the drawbacks of the prior art, an object of the present invention is to provide a quantum dot hybrid integrated multi-color display with a simple structure, easy to use, high manufacturing yield, and good light-emitting effect. The present invention further provides a manufacturing method for a quantum dot hybrid integrated multi-color display. The manufacturing method has a simple process and can be easily realized. The present invention uses a method of combining quantum dots and blue light LEDs to avoid the technical bottlenecks related to the difficulty of micro-LED colorization and the immature technical short board of the blue light lifetime efficiency of quantum dots.

Means for Solving the Problems

[0006] An embodiment of the present invention for achieving the above object provides a quantum dot hybrid integrated multi-color display, which includes a CMOS wafer substrate, an anode via hole, and a light-emitting unit. Tungsten holes are installed in the CMOS wafer substrate. The anode via hole is installed inside the CMOS wafer substrate. The anode via hole is electrically connected to the drive circuit in the CMOS wafer substrate through the tungsten hole. The anode via is a blind via starting from the surface of the CMOS wafer substrate. A light-emitting unit is provided on the surface of the anode via hole on the CMOS wafer substrate, and a drive current signal is supplied to the light-emitting unit through the anode via hole.

[0007] In some embodiments, the quantum dot hybrid integrated multi-color display further includes a filling layer and a cover glass. The filling layer is formed of an OC adhesive and is applied to the entire surface of the CMOS wafer substrate and the light-emitting unit. The cover glass covers the entire device for sealing.

[0008] In some embodiments, the light emitting unit includes an LED blue light emitting unit, a quantum dot first light emitting unit, and a quantum dot second light emitting unit, and is set such that the quantum dot first light emitting unit emits green light and the quantum dot second light emitting unit emits red light, or is set such that the quantum dot first light emitting unit emits red light and the quantum dot second light emitting unit emits green light, or only the quantum dot first light emitting unit and the LED blue light emitting unit are combined to form a two-color light emitting unit, and the quantum dot first light emitting unit emits green light or red light, or only the quantum dot second light emitting unit and the LED blue light emitting unit are combined to form a two-color light emitting unit, and the quantum dot second light emitting unit emits green light or red light.

[0009] In some embodiments, the quantum dot first light emitting unit includes a first light emitting unit anode, a first light emitting unit hole injection layer, a first light emitting unit hole transport layer, a quantum dot first light emitting layer, a first light emitting unit electron transport layer, and a first light emitting unit layer, which are arranged in order from bottom to top, and the quantum dot second light emitting unit includes a second light emitting unit anode, a second light emitting unit hole injection layer, a second light emitting unit hole transport layer, a quantum dot second light emitting layer, a second light emitting unit electron transport layer, and a second light emitting unit layer, which are arranged in order from bottom to top.

[0010] In some embodiments, an LED blue light emitting unit, a quantum dot first light emitting unit, and a quantum dot second light emitting unit are respectively provided on the surface of the parallel anode via holes on the CMOS wafer substrate, and a gap is provided between the LED blue light emitting unit, the quantum dot first light emitting unit, and the quantum dot second light emitting unit.

[0011] In some embodiments, a transparent conductive film ITO is deposited on the entire CMOS wafer substrate, the LED blue light emitting unit, the quantum dot first light emitting unit, and the quantum dot second light emitting unit to form a common cathode. On the surface of the transparent conductive film ITO in the region between the LED blue light emitting unit and the quantum dot first light emitting unit and the quantum dot second light emitting unit, one or more metals among Mg, Ag, Au, Al, Cu, Cr, and Ti are deposited to form one or more metal layers to form an interconnecting electrode.

[0012] Based on the above quantum dot hybrid integrated multicolor display, the present invention further provides a manufacturing method of a quantum dot hybrid integrated multicolor display. The manufacturing method includes the following steps: S1. Prepare a CMOS wafer substrate and a blue LED epitaxial wafer. After metal bonding the CMOS wafer substrate and the blue LED epitaxial wafer, remove the LED epitaxial wafer substrate, perform pixel patterning through photolithography and etching processes to form a silicon-based CMOS wafer having a blue light emitting unit, and etch the metal on the surface of the CMOS wafer in the IBE process, leaving only the metal in the LED blue light emitting unit, the quantum dot first light emitting unit, and the quantum dot second light emitting unit. Here, the size of each light emitting unit is 0.1 - 30 μm, and the interval between the light emitting units is 0.01 - 5 μm. S2. Deposit ITO in the sputtering process, and form an ITO layer above the metal in the quantum dot first light emitting unit and the quantum dot second light emitting unit in the yellow light and etching process. S3. Deposit PEDOT:PSS on the surface of the ITO layer by the solution spin coating method or the vacuum deposition process to form a hole injection layer with a thickness of 30 nm. S4. Deposit TFB on the hole injection layer by the solution spin coating method or the vacuum deposition process to form a hole transport layer with a thickness of 30 nm. S5. At the position of the first quantum dot light-emitting unit or the second quantum dot light-emitting unit on the hole transport layer, deposit DICTRz:CdSe / CdS quantum dots (the emission wavelength of the red light quantum dots is 630 nm) by solution spin coating method or vacuum evaporation process to form a hole transport layer with a thickness of 40 nm. S6. At the position of the second quantum dot light-emitting unit or the first quantum dot light-emitting unit on the hole transport layer, deposit CdSe / CdS or InP quantum dots (the emission wavelength of the green light quantum dots is 540 nm) by solution spin coating method or vacuum evaporation process to form a hole transport layer with a thickness of 40 nm. S7. Deposit ZnO on the light-emitting layer by solution spin coating method or vacuum evaporation process to form an electron transport layer with a thickness of 30 nm. S8. Remove the substance deposited in the S2 following process from the surface of the LED blue light-emitting unit by photolithography and chemical etching using an organic solvent, or simultaneously remove the deposited substances between the LED blue light-emitting unit, the first quantum dot light-emitting unit, and the second quantum dot light-emitting unit to form the first quantum dot light-emitting unit and the second quantum dot light-emitting unit. S9. Deposit a transparent conductive film ITO with a thickness of 20 - 1000 nm on the entire CMOS wafer substrate, the LED blue light-emitting unit, the first quantum dot light-emitting unit, and the second quantum dot light-emitting unit by sputtering process to form a common cathode.

[0013] In some embodiments, an LED blue light-emitting unit is installed on the surface of the anode via hole on the CMOS wafer substrate, and a passivation layer is deposited on the sidewall of the LED blue Hatsu light-emitting unit by PECVD or ALD. The first quantum dot light-emitting unit and the second quantum dot light-emitting unit are arranged above the LED blue light-emitting unit, and a gap is arranged between the first quantum dot light-emitting unit and the second quantum dot light-emitting unit.

[0014] In some embodiments, one or more of ITO, Mg, Ag, Au, Al, Cu, Cr, Ti, Ni are deposited on the upper surface of the LED blue light emitting unit to form a transparent cathode layer of the LED blue light emitting unit. One or more of DBR, ODR, Mg, Ag, Au, Al, Cu, Cr, Ti, Ni are deposited on the surface of the transparent cathode layer as a reflective layer, and the length of the reflective layer is shorter than the length of the LED blue Hatsu light emitting unit. The quantum dot first light emitting unit and the quantum dot second light emitting unit are disposed on the upper surface of the reflective layer. The anodes of the quantum dot first light emitting unit and the quantum dot second light emitting unit are electrically connected to the anode via holes on the CMOS wafer substrate, respectively.

[0015] In some embodiments, the above-mentioned LED blue Hatsu One or more of the metals of ITO, Mg, Ag, Au, Al, Cu, Cr, Ti, Ni with a thickness of 0.5 - 2 μm are deposited on the upper surface of the outer periphery of the light emitting unit to form a cathode of the LED blue light emitting unit. Reflective lenses are respectively disposed on both the left and right sides of the LED blue light emitting unit. A transparent conductive film ITO is deposited on the entire CMOS wafer substrate, the quantum dot first light emitting unit, the quantum dot second light emitting unit, and the cathode of the LED blue light emitting unit to form a common cathode. One or more of the metals of Mg, Ag, Au, Al, Cu, Cr, Ti are deposited on the surface of the transparent conductive film ITO between the quantum dot first light emitting unit and the quantum dot second light emitting unit to form one or more metal layers to form an interconnecting electrode.

[0016] Based on the quantum dot hybrid integrated multi-color display, the present invention also relates to a manufacturing method of the quantum dot hybrid integrated multi-color display. The manufacturing method includes the following steps: S21. Prepare a CMOS wafer substrate and a blue LED epitaxial wafer. After bonding the CMOS wafer substrate and the blue LED epitaxial wafer with metal, remove the LED epitaxial wafer substrate, perform pixel patterning through photolithography and etching processes to form a silicon-based CMOS wafer with blue light-emitting units. In the IBE process, etch the metal on the surface of the CMOS wafer, leaving only the metal in the LED blue light-emitting units. Deposit SiO2 with a thickness of 500 nm on the sidewalls of the blue light-emitting units by ALD or PECVD. Further form the first passivation layer through photolithography and dry etching processes. S22. By sputtering, deposit one or more of ITO, Mg, Ag, Au, Al, Cu, Cr, Ti, Ni with a thickness of 50 - 1000 nm on the upper surface of the LED blue light-emitting unit 3 to form a transparent cathode layer of the LED blue light-emitting unit. S23. Deposit one or more of DBR, ODR, Mg, Ag, Au, Al, Cu, Cr, Ti, Ni on the surface of the transparent cathode layer to form a reflective layer. After yellow light and etching treatment, the length of the reflective layer is about 0.5 - 30 μm shorter than the length of the LED blue Hatsu light unit. S24. Reflective lenses are respectively arranged on both the left and right sides of the LED blue light-emitting unit. The reflective lenses are formed by depositing reflective metal on the surface after etching silicon oxynitride. The light emitted from the LED blue light-emitting unit is reflected between the anode of the LED blue light-emitting unit and the reflective layer until it is transmitted to the surface of the reflective lens. The reflective lens can project the incident light parallel to the upper surface. S25. Prepare SiO2 with a thickness of 50 - 100 nm on the surface of the reflective layer through PECVD, yellow light, and etching processes. S26. Through processes such as yellow light, deposition, and etching, deposit one or more of Mg, Ag, Au, Al, Cu, Cr, Ti, Ni with a thickness of 0.5 - 2 μm on the upper surface of the outer peripheral layer of the LED blue Hatsu light unit to form a cathode of the LED blue light-emitting unit. By processes such as S27, yellow light, evaporation, and etching, deposit one or more of Mg, Ag, Au, Al, Cu, Cr, Ti, and Ni with a thickness of 0.5 - 2 μm on the SiO2 surface to fabricate the anodes of the quantum dot first light-emitting unit and the quantum dot second light-emitting unit respectively. Also, each of the anodes of the quantum dot first light-emitting unit and the quantum dot second light-emitting unit is connected to the tungsten holes on both sides of the LED blue Hatsu light unit, S28: Deposit SiO2 with a thickness of 500 nm by ALD or PECVD. Further, etch and remove the SiO2 layer on the anodes of the quantum dot first light-emitting unit and the quantum dot second light-emitting unit by photolithography and dry etching processes, covering only the positions other than the quantum dot first light-emitting unit and the quantum dot second light-emitting unit. S29: Deposit PEDOT:PSS on the anode surfaces of the quantum dot first light-emitting unit and the quantum dot second light-emitting unit by solution spin coating method or vacuum evaporation process to form a hole injection layer with a thickness of 30 nm, and fabricate the hole injection layer of the first light-emitting unit and the hole injection layer of the second light-emitting unit. S210: Deposit TFB on the hole injection layer by solution spin coating method or vacuum evaporation process to form a hole transport layer with a thickness of 30 nm, and fabricate the hole transport layer of the first light-emitting unit and the hole transport layer of the second light-emitting unit. S211: At the position of the quantum dot first light-emitting unit or the quantum dot second light-emitting unit on the hole transport layer, deposit DICTRz:CdSe / CdS quantum dots (the emission wavelength of the red light quantum dots is 630 nm) by solution spin coating method or vacuum evaporation process to form a hole transport layer with a thickness of 40 nm. S212: At the position of the quantum dot second light-emitting unit or the quantum dot first light-emitting unit on the hole transport layer, deposit CdSe / CdS or InP quantum dots (the emission wavelength of the green light quantum dots is 540 nm) by solution spin coating method or vacuum evaporation process to form a hole transport layer with a thickness of 40 nm. S213: Deposit ZnO on the light-emitting layer by solution spin coating method or vacuum evaporation process to form an electron transport layer with a thickness of 30 nm. S214. By means of a sputtering process, deposit a 20 - 1000 nm thick transparent conductive film ITO on the entire CMOS wafer substrate, the first quantum dot light - emitting unit, the second quantum dot light - emitting unit, the cathode of the LED blue - light - emitting unit, and the cathode ring, so that the cathode ring on the wafer substrate can supply power to the LED blue - light - emitting unit, the first quantum dot light - emitting unit, and the second quantum dot light - emitting unit simultaneously, enabling the formation of a common cathode.

Advantages of the Invention

[0017] The advantages of adopting the technical solution of the present invention are as follows.

[0018] 1. The present invention uses a method of combining quantum dots and blue - light LEDs to avoid the difficult problem of color conversion of micro - LEDs and the immature technical short - board of the blue - light lifetime efficiency of quantum dots. The quantum - dot hybrid integrated multi - color display has a simple structure, is easy to use, has a high manufacturing yield, and also has a good light - emitting effect. A vertical - structure quantum - dot hybrid integrated multi - color display structure is further proposed, which can achieve the technical effect of further improving the display PPI (pixel density).

[0019] 2. The present invention integrates the proven inorganic GaN - based blue - light LED with the red and green light quantum - dot light - emitting system technologies to form a color micro - display device, overcomes the technical defect that the existing GaN red light has low efficiency, and realizes the high - efficiency display of the inorganic LED micro - display device.

Brief Description of the Drawings

[0020]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Embodiments for Carrying Out the Invention

[0021] The present invention will be described in more detail below in conjunction with the accompanying drawings and specific embodiments.

[0022] In the present invention, the orientation or positional relationship indicated by terms such as "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "upper", "lower", "inner", "outer", "clockwise", "counterclockwise", "axial direction", "circumferential direction", etc. is for facilitating the description of the present invention, which simplifies the description and does not imply or suggest that the device or element mentioned must have a specific directionality or must be constructed and operated in a specific directionality, and thus cannot be understood as a limitation of the present invention.

[0023] As shown in FIGS. 1 to 6, the quantum dot hybrid integrated multi-color display includes a CMOS wafer substrate 1, an anode via hole 2, and a light-emitting unit. A tungsten hole is provided in the CMOS wafer substrate 1, and the anode via hole 2 is disposed on the CMOS wafer substrate 1. The anode via hole 2 is electrically connected to a driving circuit in the CMOS wafer substrate 1 through the tungsten hole. The anode via hole 2 is a blind via starting from the surface of the CMOS wafer substrate, that is, the anode via 2 starts from the CMOS wafer substrate but does not penetrate the CMOS wafer substrate. A light-emitting unit is provided on the surface of the anode via hole 2 on the CMOS wafer substrate 1, and a driving current signal is supplied to the light-emitting unit through the anode via hole 2. The quantum dot hybrid integrated multi-color display also includes a filling layer 6 and a cover glass 7. The filling layer 6 is formed by an OC adhesive, coated on the entire surface of the CMOS wafer substrate 1 and the light-emitting unit, and covers the cover glass 7 to seal the entire device. The present invention uses a method of combining quantum dots and blue light LEDs to avoid the problem of color conversion of micro-LEDs and the technical shortcoming of the immature blue light lifetime efficiency of quantum dots. The quantum dot hybrid integrated multi-color display has a simple structure, is easy to use, has a high manufacturing yield, and has a good light-emitting effect.

[0024] The light-emitting unit includes an LED blue light-emitting unit 3, a quantum dot first light-emitting unit 4, and a quantum dot second light-emitting unit 5. The quantum dot first light-emitting unit 4 is assumed to emit green light. The quantum dot second light-emitting unit 5 is assumed to emit red light. Or, the quantum dot first light-emitting unit 4 is assumed to emit red light. The quantum dot second light-emitting unit 5 is assumed to emit green light. Or, only the quantum dot first light-emitting unit 4 and the LED blue light-emitting unit 3 are combined to form a two-color light-emitting unit, and the light-emitting unit 4 emits color light or red light. Or, only the quantum dot second light-emitting unit 5 and the LED blue light-emitting unit 3 are combined to form a two-color light-emitting unit, and the quantum dot second light-emitting unit 5 emits green light or red light.

[0025] Example 1 An LED blue light emitting unit 3, a quantum dot first light emitting unit 4, and a quantum dot second light emitting unit 5 are respectively arranged on the surfaces of parallel anode via holes 2 on a CMOS wafer substrate 1. There is a gap between the LED blue light emitting unit 3, the quantum dot first light emitting unit 4, and the quantum dot second light emitting unit 5. The sizes of the LED blue light emitting unit 3, the quantum dot first light emitting unit 4, and the quantum dot second light emitting unit 5 are 0.1 to 10 μm. The gap between the LED blue light emitting unit 3, the quantum dot first light emitting unit 4, and the quantum dot second light emitting unit 5 is 0.01 - 10 μm. A transparent conductive film ITO is deposited on the entire CMOS wafer substrate 1, the LED blue light emitting unit 3, the quantum dot first light emitting unit 4, and the quantum dot second light emitting unit 5 to form a common cathode. One or more metals among Mg, Ag, Au, Al, Cu, Cr, and Ti are deposited on the surface of the transparent conductive film ITO in the region between the LED blue light emitting unit 3, the quantum dot first light emitting unit 4, and the quantum dot second light emitting unit 5 to form one or more metal layers to form an interconnecting electrode.

[0026] Specifically, the quantum dot hybrid integrated multi-color display includes a CMOS wafer substrate 1. An anode via hole 2 is formed in the CMOS wafer substrate 1. The anode via hole 2 is a blind via starting from the surface of the CMOS wafer substrate (i.e., not penetrating through the CMOS wafer substrate). A drive current signal can be supplied to the light-emitting unit through the anode via hole 2. An LED blue light-emitting unit 3, a quantum dot first light-emitting unit 4, and a quantum dot second light-emitting unit 5 are arranged on the surfaces of the parallel anode via holes 2 respectively. Here, it can be set such that the quantum dot first light-emitting unit 4 emits green light and the quantum dot second light-emitting unit 5 emits red light. Or, it can be set such that the quantum dot first light-emitting unit 4 emits red light and the quantum dot second light-emitting unit 5 emits green light to achieve a full-color display effect. Similarly, it can also be set to form a two-color light-emitting unit by combining only the quantum dot first light-emitting unit 4 and the LED blue light-emitting unit 3, or by combining only the quantum dot second light-emitting unit 5 and the LED blue light-emitting unit 3.

[0027] In the manufacturing method of the quantum dot hybrid integrated multi-color display, one CMOS wafer substrate 1 is prepared, and an anode via 2 is formed inside the CMOS wafer substrate 1, and the anode via hole 2 is connected through to the surface of the CMOS wafer substrate. A drive current signal can be supplied to the light-emitting unit through the anode via hole 2. Generally, the anode via hole 2 is a tungsten hole. A blue LED epitaxial wafer is prepared, and the substrate material is epitaxial growth. General materials include silicon, sapphire, gallium nitride, silicon carbide, etc. The specific manufacturing method procedure is as follows.

[0028] S1. Deposit a Ti / Pt / Au metal layer on the surface of the CMOS wafer substrate 1 having tungsten holes. The corresponding thicknesses of each metal layer are 20 nm / 50 nm / 1000 nm respectively, form a metal bond on the upper CMOS wafer substrate 1, deposit an ITO / Cr / Al / Pt / Au metal layer on the surface of the blue LED epitaxial wafer, and the corresponding thicknesses of each metal layer are 50 nm / 20 nm / 200 nm / 50 nm / 1000 nm respectively. Form a metal bond on the blue LED epitaxial wafer, bond the CMOS wafer substrate 1 and the blue LED epitaxial wafer, remove the LED epitaxial wafer substrate, and perform pixel patterning through photolithography and etching processes to form a silicon-based CMOS wafer having a blue light-emitting unit 3.

[0029] By the IBE (Ion Beam Etch) process, etch the Ti / Pt / Au (20 nm / 50 nm / 1000 nm) metal layer on the surface of the CMOS wafer substrate, leaving the metal in the LED blue light-emitting unit 3, the quantum dot first light-emitting unit 4, and the quantum dot second light-emitting unit 5. Here, the size of the light-emitting unit is 0.1 - 10 μm, and the distance between the light-emitting units is 0.01 - 10 μm.

[0030] Deposit SiO2 with a thickness of 500 nm on the sidewalls of the blue light-emitting unit 3 by ALD (atomic layer deposition) or PECVD (Plasma Enhanced Chemical Vapor Deposition), and further form a first passivation layer 9 through photolithography and dry etching processes.

[0031] S2. Sputtering process: Deposit ITO using sputtering ITO, and use yellow light and etching process to form an ITO layer on the metal in the quantum dot first light-emitting unit 4 and the quantum dot second light-emitting unit 5. In order to further improve the brightness of the quantum dot first light-emitting unit 4 and the quantum dot second light-emitting unit 5, it can be realized by depositing a metal with a high reflectivity of 50 - 1000 nm such as Ag or Al before depositing the ITO layer.

[0032] S3. Solution spin coating method or vacuum deposition process: Deposit PEDOT:PSS on the surface of the ITO layer to form a hole injection layer with a thickness of 30 nm. Here, PEDOT:PSS refers to a polymer composed of PEDOT and PSS. PEDOT is a polymer of EDOT (3,4-ethylenedioxythiophene monomer), and PSS is polystyrene sulfonic acid.

[0033] S4. Solution spin coating method or vacuum deposition process: Deposit TFB (1,2,4,5-tetrakis(trifluoromethyl)benzene) on the hole injection layer to form a hole transport layer with a thickness of 30 nm.

[0034] S5. At the position of the quantum dot first light-emitting unit 4 or the quantum dot second light-emitting unit 5 on the hole transport layer, deposit DICTRz:CdSe / CdS (the emission wavelength of the red light quantum dot is 620 - 640 nm) using the solution spin coating method or the vacuum deposition process to form a hole transport layer with a thickness of 40 nm. Here, DICTRz is 12-(4,6-diphenyl-1,3,5-triazin-2-yl)-11-phenylindolo[2,3-a]carbazole, CdSe is cadmium selenide, and CdS is cadmium sulfide.

[0035] S6. On the position of the quantum dot second light-emitting unit 5 or the position of the quantum dot first light-emitting unit 4 on the hole transport layer, CdSe / CdS or InP quantum dots (the emission wavelength of the green light quantum dots is 530 - 550 nm) are deposited using the solution spin coating method or the vacuum evaporation process to form a hole transport layer with a thickness of 40 nm. Here, CdSe is cadmium selenide, CdS is cadmium sulfide, and InP is indium phosphide.

[0036] S7. ZnO is deposited on the light-emitting layer by the solution spin coating method or the vacuum evaporation process to form an electron transport layer with a thickness of 30 nm.

[0037] S8. By photolithography and chemical etching using an organic solvent, the substances deposited in the S2 following process are removed from the surface of the LED blue light-emitting unit, and the substances deposited between the LED blue light-emitting unit 3, the quantum dot first light-emitting unit 4, and the quantum dot second light-emitting unit 5 are removed simultaneously to form the quantum dot first light-emitting unit 4 and the quantum dot second light-emitting unit 5. Specifically, by photolithography and chemical etching using an organic solvent, the materials deposited in steps S2 - S7 on the surface of the LED blue light-emitting unit are removed, or the materials deposited in S2 - S7 between the LED blue light-emitting unit 3, the quantum dot first light-emitting unit 4, and the quantum dot second light-emitting unit 5 can also be removed.

[0038] S9. By the sputtering process, a transparent conductive film ITO with a thickness of 20 - 1000 nm is deposited to cover the surfaces of the blue light-emitting unit 3, the quantum dot first light-emitting unit 4, and the quantum dot second light-emitting unit 5 to form a common cathode.

[0039] S10. One or more of metals Mg, Ag, Au, Al, Cu, Cr, Ti are deposited on the ITO surface in the region between the LED blue light-emitting unit 3, the quantum dot first light-emitting unit 4, and the quantum dot second light-emitting unit 5 to form one or more metal layers as interconnecting electrodes. This can enhance the conductivity of the common cathode ITO without affecting the light output of each light-emitting unit.

[0040] S11. By a spin coating or dispensing process, apply a filling layer 6 formed of an OC adhesive onto the wafer surface, and then use a cover glass 7 to seal and protect the entire device.

[0041] Example 2 Arrange an LED blue light emitting unit 3 on the surface of an anode via hole 2 on a CMOS wafer substrate 1, and by PECVD (Plasma Enhanced Chemical Vapor Deposition - Plasma Enhanced Chemical Vapor Deposition Method) or ALD (atomic layer deposition - Atomic Layer Deposition), deposit a layer of passivation layer on the side wall of the LED blue Hatsu light unit 3. The quantum dot first light emitting unit 4 and the quantum dot second light emitting unit 5 are arranged above the LED blue light emitting unit 3. There is a gap between the quantum dot first light emitting unit 4 and the quantum dot second light emitting unit 5. The gap between the quantum dot first light emitting unit 4 and the quantum dot second light emitting unit 5 is 0.01 - 0.3 μm, and the LED blue Hatsu size of the light unit 3 is 0.1 - 30 μm, and the sizes of the quantum dot first light emitting unit 4 and the quantum dot second light emitting unit 5 are 0.1 - 20 μm.

[0042] Deposit one or more of ITO, Mg, Ag, Au, Al, Cu, Cr, Ti, Ni on the upper surface of the LED blue light emitting unit 3 to form a transparent cathode layer of the LED blue light emitting unit 3. Deposit one or more of DBR, ODR, Mg, Ag, Au, Al, Cu, Cr, Ti, Ni on the surface of the transparent cathode layer to form a reflective layer 11. The length of the reflective layer 11 is shorter than the length of the LED blue Hatsu light unit 3, and the quantum dot first light emitting unit 4 and the quantum dot second light emitting unit 5 are arranged on the upper surface of the reflective layer 11. The anodes of the quantum dot first light emitting unit 4 and the quantum dot second light emitting unit 5 are electrically connected to the anode via holes 2 on the CMOS wafer substrate 1, respectively.

[0043] the LED blue Hatsu On the upper surface of the outer periphery of the optical unit, one or more of ITO, Mg, Ag, Au, Al, Cu, Cr, Ti, Ni with a thickness of 0.5 - 2 μm are vapor-deposited to form the cathode 10 of the LED blue light-emitting unit. Reflective lenses 8 are respectively provided on both the left and right sides of the LED blue light-emitting unit 3. On the entire CMOS wafer substrate 1, the first quantum dot light-emitting unit 4, the second quantum dot light-emitting unit 5, and the cathode 10 of the LED blue light-emitting unit, a transparent conductive film ITO is vapor-deposited to serve as a common cathode. On the surface of the transparent conductive film ITO between the first quantum dot light-emitting unit 4 and the second quantum dot light-emitting unit 5, one or more metals among Mg, Ag, Au, Al, Cu, Cr, Ti are vapor-deposited to form one or more metal layers to form an interconnecting electrode.

[0044] Specifically, the quantum dot hybrid integrated multicolor display includes a CMOS wafer substrate 1. An anode via 2 is formed inside the CMOS wafer substrate 1, and the anode via hole 2 is a blind via starting from the surface of the CMOS wafer substrate (i.e., not penetrating the CMOS wafer substrate). A drive current signal can be supplied to the light-emitting unit through the anode via hole 2. The LED blue light-emitting unit 3 is disposed on the surface of the anode via hole 2, and by PECVD or ALD, the LED blue HatsuDeposit a single layer of passivation layer on the sidewall of the optical unit 3. The quantum dot first light-emitting unit 4 and the quantum dot second light-emitting unit 5 are arranged above the LED blue light-emitting unit 3. By controlling the LED blue light-emitting unit 3, the quantum dot first light-emitting unit 4, and the quantum dot second light-emitting unit 5 individually through parallel anode via holes 2, an AM quantum dot hybrid integrated multi-color display is formed. Alternatively, only the quantum dot first light-emitting unit 4 or the quantum dot second light-emitting unit 5 is set on the surface of the LED blue light-emitting unit 3 to form a two-color AM quantum dot hybrid integrated display. It can also be set so that the quantum dot first light-emitting unit 4 emits green light and the quantum dot second light-emitting unit 5 emits red light, or it can be set so that the quantum dot first light-emitting unit 4 emits red light and the quantum dot second light-emitting unit 5 emits green light to achieve a full-color display effect. Similarly, it can also be set to form a two-color light-emitting unit by combining only the quantum dot first light-emitting unit 4 and the LED blue light-emitting unit 3, or alternatively, it can be set to form a two-color light-emitting unit by combining only the quantum dot second light-emitting unit 5 and the LED blue light-emitting unit 3.

[0045] In FIG. 4, the blue light-emitting unit 3 is joined to the surface 2 of the CMOS wafer substrate anode via hole 2 through a metal joining process. Here, the joining metal includes Mg, Ag, Au, Al, Cu, Cr, Ti, Ni. One or more metals form the anode of the metal blue light LED unit with one or more layers. By sputtering, one or more of ITO, Mg, Ag, Au, Al, Cu, Cr, Ti, Ni are deposited on the upper surface of the LED blue light-emitting unit 3 to form a transparent cathode layer of the LED blue light-emitting unit 3. One or more of DBR, ODR, Mg, Ag, Au, Al, Cu, Cr, Ti, Ni are deposited on the surface of the transparent cathode layer to form a reflective layer 11. Here, the length of the reflective layer 11 is shorter than the length of the LED blue Hatsu optical unit 3.

[0046] On both the left and right sides of the LED blue light emitting unit 3, reflection lenses 8 are respectively provided. The light emitted from the LED blue light emitting unit is reflected between the anode of the LED blue light emitting unit and the reflection layer 11 before being transmitted to the surface of the reflection lens 8, and the reflection lens 8 can emit the incident light parallel to its upper surface. The quantum dot first light emitting unit 4 and the quantum dot second light emitting unit 5 are arranged on the upper surface of the reflection layer 11. When the reflection layer 11 is a conductive metal, an insulating medium exists between the reflection layer 11 and the quantum dot light emitting unit. The insulating medium can be an organic polymer or SiN, SiO, etc. In the B-B' direction of FIG. 3, as shown in FIG. 4, one or more of ITO, Mg, Ag, Au, Al, Cu, Cr, Ti, Ni with a thickness of 0.5 - 2 μm are deposited on the upper surface of the outer periphery of the LED blue Hatsu light emitting unit to form the LED blue light emitting unit cathode 10.

[0047] In the direction of A-A' in FIG. 3, as shown in FIG. 5, the quantum dot first light-emitting unit 4 and the quantum dot second light-emitting unit 5 are each located on the upper surface of the reflective layer 11. The anodes of the quantum dot first light-emitting unit 4 and the quantum dot second light-emitting unit 5 are electrically connected to the anode via holes 2 of the wafer substrate through the via holes 2, respectively. Here, the areas occupied by the quantum dot first light-emitting unit 4 and the quantum dot second light-emitting unit 5 can be set as required. For example, the area of the green light-emitting unit occupies 2 / 3 of the area of the reflective layer 11. The area of the red light-emitting unit occupies 2 / 3 of the area of the reflective layer 11. Then, ITO with a thickness of 20 - 1000 nm is deposited on the entire CMOS wafer substrate 1, the quantum dot first light-emitting unit 4, the quantum dot second light-emitting unit 5, and the LED blue light-emitting unit cathode 10 to form a common cathode, and the LED blue light-emitting unit cathode, the quantum dot first light-emitting unit 4, and the quantum dot second light-emitting unit 5 are connected to the cathode ring of the wafer substrate. Also, on the ITO surface between the light-emitting units, one or more of metals Mg, Ag, Au, Al, Cu, Cr, Ti are deposited to form one or more metal layers as interconnect electrodes to enhance the conductivity of the common cathode ITO without affecting the light output of each light-emitting unit. On the layer surface, a filling layer 6 formed by an OC adhesive is applied to the wafer surface by a spin coating or dispensing process, and then the entire device is sealed and protected using a cover glass 7.

[0048] The quantum dot first light-emitting unit 4 includes a first light-emitting unit anode 401, a first light-emitting unit hole injection layer 402, a first light-emitting unit hole transport layer 403, a quantum dot first light-emitting layer 404, a first light-emitting unit electron transport layer 405, and a first light-emitting unit layer 406 installed in order from bottom to top. The quantum dot second light-emitting unit 5 includes a second light-emitting unit anode 501, a second light-emitting unit hole injection layer 502, a second light-emitting unit hole transport layer 503, a quantum dot second light-emitting layer 504, a second light-emitting unit electron transport layer 505, and a second light-emitting unit layer 506 installed in order from bottom to top. Here, the light-emitting unit hole injection layer and the hole transport layer may or may not be partitioned.

[0049] In the method for manufacturing the quantum dot hybrid integrated multi-color display, one CMOS wafer substrate 1 is prepared, an anode via 2 is formed inside the CMOS wafer substrate 1, and the anode via hole 2 is a blind via starting from the surface of the CMOS wafer substrate. A drive current signal can be supplied to the light-emitting unit through the anode via hole 2. The anode via hole 2 is electrically connected to the drive circuit in the CMOS wafer substrate 1 through a tungsten hole. A blue LED epitaxial wafer is prepared, and the substrate material is epitaxial growth. General materials include silicon, sapphire, gallium nitride, silicon carbide, etc. The specific manufacturing procedure is as follows.

[0050] S21. Deposit a Ti / Pt / Au metal layer on the surface of the CMOS wafer substrate 1 having a tungsten hole. The corresponding thicknesses of each metal layer are 20 nm / 50 nm / 1000 nm respectively, form a metal bond on the CMOS wafer substrate 1, deposit an ITO / Cr / Al / Pt / Au metal layer on the surface of the blue LED epitaxial wafer, and the corresponding thicknesses of each metal layer are 50 nm / 20 nm / 200 nm / 50 nm / 1000 nm respectively, form a metal bond on the blue LED epitaxial wafer, bond the CMOS wafer substrate 1 and the blue LED epitaxial wafer, remove the LED epitaxial wafer substrate, and perform pixel patterning through photolithography and etching processes to form a silicon-based CMOS wafer having a blue light-emitting unit 3.

[0051] By the IBE process, etch the Ti / Pt / Au (20 nm / 50 nm / 1000 nm) metal on the surface of the CMOS wafer substrate to leave only the metal in the LED blue light-emitting unit 3. Here, the size of the light-emitting unit is 0.1 - 30 μm, and the interval between the light-emitting units is 0.01 - 5 μm.

[0052] By ALD (Atomic Layer Deposition) or PECVD (Plasma Enhanced Chemical Vapor Deposition), deposit SiO2 with a thickness of 500 nm on the sidewalls of the blue light emitting unit 3. Further, form a passivation layer through photolithography and dry etching processes.

[0053] S22, By sputtering, deposit one or more of ITO, Mg, Ag, Au, Al, Cu, Cr, Ti, Ni with a thickness of 50 - 1000 nm on the upper surface of the LED blue light emitting unit 3 to serve as the transparent cathode layer of the LED blue light emitting unit 3.

[0054] S23, Deposit one or more of DBR, ODR, Mg, Ag, Au, Al, Cu, Cr, Ti, Ni on the surface of the transparent cathode layer to serve as the reflective layer 11. After yellow light and etching treatment, the length of the reflective layer 11 is about 0.5 - 30 μm shorter than the length of the LED blue Hatsu light emitting unit 3, and then by depositing the LED blue Color Hatsu light emitting unit cathode 10, the loss of the light emitting area can be minimized.

[0055] S24, On both the left and right sides of the LED blue light emitting unit 3, reflective lenses 8 are respectively provided. The reflective lens 8 is formed by being etched with silicon oxynitride and then depositing a reflective metal on the surface. The fabrication of the reflective lens 8 is an existing technology and will not be further described herein.

[0056] The light emitted from the LED blue light emitting unit is reflected between the anode of the LED blue light emitting unit and the reflective layer 11, transmitted to the surface of the reflective lens 8, and the incident light of the reflective lens 8 can be emitted parallel to the upper surface.

[0057] S25, By PECVD (Plasma Enhanced Chemical Vapor Deposition - Plasma Enhanced Chemical Vapor Deposition Method), yellow light, and etching process, fabricate SiO2 with a thickness of 50 - 100 nm on the surface of the mirror layer 11.

[0058] S26, in the BB' direction in Figure 3, through processes such as yellow light, deposition, and etching, LED blue Hatsu On the upper surface of the optical unit peripheral layer, 0.5-2 μm of one or more of Mg, Ag, Au, Al, Cu, Cr, Ti, and Ni is evaporated to form the LED blue light-emitting unit cathode 10.

[0059] S27, in the direction AA' of FIG. 3, by using processes such as yellow light, deposition, and etching, deposit one or more of Mg, Ag, Au, Al, Cu, Cr, Ti, and Ni on the SiO2 surface to a thickness of 0.5-2 μm, respectively, to prepare the anodes of the first quantum dot light-emitting unit 4 and the second quantum dot light-emitting unit 5. In addition, the anodes of the first quantum dot light-emitting unit 4 and the second quantum dot light-emitting unit 5 are respectively connected to the blue LED. Hatsu The quantum dot first light-emitting unit 4 and the quantum dot second light-emitting unit 5 are connected to the anodes on both sides of the light unit 3, respectively. Here, the area occupied by the quantum dot first light-emitting unit 4 and the quantum dot second light-emitting unit 5 can be set according to needs. For example, the area of the green light-emitting unit occupies 1 / 3 of the area of the reflective layer 11, and the area of the red light-emitting unit occupies 2 / 3 of the area of the reflective layer 11. The anodes of the quantum dot first light-emitting unit 4 and the quantum dot second light-emitting unit 5 are partitioned.

[0060] S28, ALD or PECVD is used to deposit SiO2 to a thickness of 500 nm, and then photolithography and dry etching are used to etch and remove the SiO2 layer at the anode positions of the first quantum dot light-emitting unit 4 and the second quantum dot light-emitting unit 5. Only the positions other than the first quantum dot light-emitting unit 4 and the second quantum dot light-emitting unit 5 are covered.

[0061] S29. By means of the solution spin coating method or the vacuum evaporation process, PEDOT:PSS is deposited on the anode surfaces of the quantum dot first light-emitting unit 4 and the quantum dot second light-emitting unit 5 to form a hole injection layer with a thickness of 30 nm. PEDOT:PSS is a polymer composed of two substances, PEDOT and PSS. PEDOT is a polymer of EDOT (3,4-ethylenedioxythiophene monomer), and PSS is polystyrene sulfonic acid. A first light-emitting unit hole injection layer 402 and a second light-emitting unit hole injection layer 502 are fabricated. Here, the first light-emitting unit hole injection layer 402 and the second light-emitting unit hole injection layer 502 can be connected or disconnected from each other.

[0062] S210. Using the solution spin coating method or the vacuum evaporation process, TFB (1,2,4,5-tetrakis(trifluoromethyl)benzene) is deposited on the hole injection layer to form a hole transport layer with a thickness of 30 nm, and a first light-emitting unit hole transport layer 403 and a second light-emitting unit hole transport layer 503 are fabricated. Here, the first light-emitting unit hole transport layer 403 and the second light-emitting unit hole transport layer 503 can be connected or disconnected from each other.

[0063] S211. At the position of the quantum dot first light-emitting unit 4 or the quantum dot second light-emitting unit 5 on the hole transport layer, DICTRz:CdSe / CdS (the emission wavelength of the red light quantum dots is 630 nm) is deposited by means of the solution spin coating method or the vacuum evaporation process to form a hole transport layer with a thickness of 40 nm. DICTRz is 12-(4,6-diphenyl-1,3,5-triazin-2-yl)-11-phenylindolo[2,3-a]carbazole. CdSe is cadmium selenide, and CdS is cadmium sulfide.

[0064] S212. At the position of the quantum dot second light-emitting unit 5 or the position of the quantum dot first light-emitting unit 4 on the hole transport layer, deposit CdSe / CdS or InP quantum dots (the emission wavelength of the green light quantum dots is 540 nm) by solution spin coating method or vacuum evaporation process, and form a hole transport layer with a thickness of 40 nm. Here, CdSe is cadmium selenide, CdS is cadmium sulfide, and InP is indium phosphide.

[0065] S213. Deposit ZnO on the light-emitting layer by solution spin coating method or vacuum evaporation process to form an electron transport layer with a thickness of 30 nm. The quantum dot first light-emitting unit 4 and the quantum dot second light-emitting unit 5 are partitioned.

[0066] S214. By sputtering process, deposit a transparent conductive film ITO (not shown) with a thickness of 20 - 1000 nm on the entire CMOS wafer substrate 1, the quantum dot first light-emitting unit 4, the quantum dot second light-emitting unit 5, the LED blue light-emitting unit cathode 10 and the cathode ring, so that the cathode ring on the wafer substrate can supply power to the LED blue light-emitting unit 3, the quantum dot first light-emitting unit 4, and the quantum dot second light-emitting unit 5 simultaneously, and form a common cathode.

[0067] S215. Further, deposit at least one metal among metals such as Mg, Ag, Au, Al, Cu, Cr, Ti on the ITO surface between the quantum dot first light-emitting unit 4 and the quantum dot second light-emitting unit 5 to form one or more metal layers as interconnection electrodes, and enhance the conductivity of the common cathode ITO without affecting the light output of each light-emitting unit.

[0068] S216. Apply a filling layer 6 formed by an OC adhesive to the wafer surface by spin coating or dispensing process on the layer surface, and then use a cover glass 7 to seal and protect the entire device.

[0069] The present invention proposes a vertical structure quantum dot hybrid integrated multi-color display structure, and can achieve the technical effect of further improving the display PPI (pixel density).

[0070] As described above, the present invention has been exemplarily described with reference to the accompanying drawings. However, it is obvious that the specific implementation of the present invention is not limited to the above method as long as various non-substantial improvements to the technical solution of the present invention are possible. Or, when the idea and technical solution of the present invention are directly applied to other situations without improvement, they are all within the protection scope of the present invention.

[0071] The reference numerals in the above figures are as follows.

Explanation of Reference Numerals

[0072] 1, CMOS wafer substrate; 2, anode via hole; 3, LED blue light emitting unit; 4, quantum dot first light emitting unit; 401, first light emitting unit anode; 402, first light emitting unit hole injection layer; 403, first light emitting unit hole transport layer; 404, quantum dot first light emitting layer; 405, first light emitting unit electron transport layer; 406, first light emitting unit layer; 5, quantum dot second light emitting unit; 501, second light emitting unit anode; 502, second light emitting unit hole injection layer; 503, second light emitting unit hole transport layer; 504, quantum dot second light emitting layer; 505, second light emitting unit electron transport layer; 506, second light emitting unit layer; 6, filling layer; 7, cover glass; 8, reflection lens; 9, passivation layer; 10, LED blue light emitting unit cathode; 11, reflection layer.

Claims

1. A quantum dot hybrid integrated multi-color display, comprising a CMOS wafer substrate (1), an anode via hole (2), and a light emitting unit, a tungsten hole is provided in the CMOS wafer substrate (1), the anode via hole (2) is provided inside the CMOS wafer substrate (1), the anode via hole (2) is electrically connected to a drive circuit in the CMOS wafer substrate 1 through the tungsten hole, the anode via hole (2) is connected through to the surface of the CMOS wafer substrate, a light emitting unit is provided on the surface of the anode via hole (2) on the CMOS wafer substrate (1), and a drive current signal is supplied to the light emitting unit through the anode via hole (2), the light emitting unit includes an LED blue light emitting unit (3), a quantum dot first light emitting unit (4), and a quantum dot second light emitting unit (5), the quantum dot first light emitting unit (4) includes a first light emitting unit anode (401), a first light emitting unit hole injection layer (402), a first light emitting unit hole transport layer (403), a quantum dot first light emitting layer (404), a first light emitting unit electron transport layer (405), and a first light emitting unit layer (406) installed in order from bottom to top, the quantum dot second light emitting unit (5) includes a second light emitting unit anode (501), a second light emitting unit hole injection layer (502), a second light emitting unit hole transport layer (503), a quantum dot second light emitting layer (504), a second light emitting unit electron transport layer (505), and a second light emitting unit layer (506) installed in order from bottom to top, an LED blue light emitting unit (3), a quantum dot first light emitting unit (4), and a quantum dot second light emitting unit (5) are respectively arranged on the surfaces of the parallel anode via holes (2) on the CMOS wafer substrate 1, there is a gap between the LED blue light emitting unit (3), the quantum dot first light emitting unit (4), and the quantum dot second light emitting unit (5), a transparent conductive film ITO is deposited on the entire CMOS wafer substrate 1, the LED blue light emitting unit (3), the quantum dot first light emitting unit (4), and the quantum dot second light emitting unit (5) to form a common cathode. On the surface of the transparent conductive film ITO in the region between the LED blue light emitting unit (3), the quantum dot first light emitting unit (4), and the quantum dot second light emitting unit (5), one or more metals among Mg, Ag, Au, Al, Cu, Cr, and Ti are deposited to form one or more metal layers, and an interconnection electrode is formed, characterized in that it is a quantum dot hybrid integrated multi-color display.

2. A quantum dot hybrid integrated multi-color display, comprising a CMOS wafer substrate (1), an anode via hole (2), and a light emitting unit, tungsten holes are provided in the CMOS wafer substrate (1), the anode via hole (2) is provided inside the CMOS wafer substrate (1), the anode via hole (2) is electrically connected to a drive circuit in the CMOS wafer substrate (1) through the tungsten hole, the anode via hole (2) penetrates and connects to the surface of the CMOS wafer substrate, a light emitting unit is provided on the surface of the anode via hole (2) on the CMOS wafer substrate (1), and a drive current signal is supplied to the light emitting unit through the anode via hole (2), the light emitting unit includes an LED blue light emitting unit (3), a quantum dot first light emitting unit (4), and a quantum dot second light emitting unit (5), the quantum dot first light emitting unit (4) includes a first light emitting unit anode (401), a first light emitting unit hole injection layer (402), a first light emitting unit hole transport layer (403), a quantum dot first light emitting layer (404), a first light emitting unit electron transport layer (405), and a first light emitting unit layer (406) arranged in order from bottom to top, the quantum dot second light emitting unit (5) includes a second light emitting unit anode (501), a second light emitting unit hole injection layer (502), a second light emitting unit hole transport layer (503), a quantum dot second light emitting layer (504), a second light emitting unit electron transport layer (505), and a second light emitting unit layer (506) arranged in order from bottom to top, the LED blue light emitting unit (3) is arranged on the surface of the anode via hole (2) on the CMOS wafer substrate (1), and a passivation layer is deposited on the sidewall of the LED blue light emitting unit (3) by PECVD or ALD. The quantum dot first light-emitting unit (4) and the quantum dot second light-emitting unit (5) are disposed above the LED blue light-emitting unit (3), A quantum dot hybrid integrated multi-color display, characterized in that there is a gap between the quantum dot first light-emitting unit (4) and the quantum dot second light-emitting unit (5). **Claim 3** The quantum dot first light-emitting unit (4) is set to emit green light, and the quantum dot second light-emitting unit (5) is set to emit red light, or, the quantum dot first light-emitting unit (4) is set to emit red light, and the quantum dot second light-emitting unit (5) is set to emit green light, or, only the quantum dot first light-emitting unit (4) and the LED blue light-emitting unit (3) are combined to form a two-color light-emitting unit, and the quantum dot first light-emitting unit (4) is set to emit green light or red light, or, only the quantum dot second light-emitting unit (5) and the LED blue light-emitting unit (3) are combined to form a two-color light-emitting unit, and the quantum dot second light-emitting unit (5) is set to emit green light or red light. The quantum dot hybrid integrated multi-color display according to claim 1 or claim 2, characterized in that. **Claim 4** A transparent cathode layer of the LED blue light-emitting unit (3) is deposited on the upper surface of the LED blue light-emitting unit (3), a reflective layer (11) is deposited on the surface of the transparent cathode layer, and the length of the reflective layer (11) is shorter than the length of the LED blue light-emitting unit (3), The quantum dot first light-emitting unit (4) and the quantum dot second light-emitting unit (5) are disposed on the upper surface of the reflective layer (11), The anodes of the quantum dot first light-emitting unit (4) and the quantum dot second light-emitting unit (5) are electrically connected to anode via holes (2) on the CMOS wafer substrate (1) respectively. The quantum dot hybrid integrated multi-color display according to claim 2, characterized in that. **Claim 5** An LED blue light-emitting unit cathode (10) is deposited on the upper surface of the outer periphery of the LED blue light-emitting unit, and reflective lenses 8 are disposed on both the left and right sides of the LED blue light-emitting unit (3), On the CMOS wafer substrate, the quantum dot first light-emitting unit (4), the quantum dot second light-emitting unit (5), and the cathode (10) of the LED blue light-emitting unit, a transparent conductive film ITO serving as a common cathode is deposited. On the surface of the transparent conductive film ITO between the quantum dot first light-emitting unit (4) and the quantum dot second light-emitting unit (5), one or more metals among Mg, Ag, Au, Al, Cu, Cr, and Ti are deposited, and one or more metal layers are formed to form an interconnecting electrode, The quantum dot hybrid integrated multicolor display according to claim 4, characterized in that.

6. Further including a filling layer (6) and a cover glass (7). The filling layer (6) is formed of an OC adhesive and is applied to the entire surface of the CMOS wafer substrate (1) and the light-emitting unit. The quantum dot hybrid integrated multicolor display according to claim 1 or claim 2, characterized in that the cover glass (7) covers the entire device for sealing.

7. A method for manufacturing the quantum dot hybrid integrated multicolor display according to claim 1, comprising: Preparing a CMOS wafer substrate (1) and a blue LED epitaxial wafer, metal-bonding the CMOS wafer substrate (1) and the blue LED epitaxial wafer, then removing the LED epitaxial wafer substrate, performing pixel patterning through photolithography and etching processes, and forming a silicon-based CMOS wafer having a blue light-emitting unit (3). Etching the metal on the surface of the CMOS wafer in the IBE process, leaving only the metal in the LED blue light-emitting unit (3), the quantum dot first light-emitting unit (4), and the quantum dot second light-emitting unit (5). Here, the size of each light-emitting unit is 0.1 to 30 μm, and the interval between the light-emitting units is 0.01 - 5 μm, S1; Depositing ITO in a sputtering process, and forming an ITO layer above the metal in the quantum dot first light-emitting unit (4) and the quantum dot second light-emitting unit (5) in a yellow light and etching process, S2; Depositing PEDOT:PSS on the surface of the ITO layer by a solution spin coating method or a vacuum evaporation process to form a hole injection layer with a thickness of 30 nm, S3; Depositing TFB on the hole injection layer by a solution spin coating method or a vacuum evaporation process to form a hole transport layer with a thickness of 30 nm, S4; At the position of the quantum dot first light-emitting unit (4) on the hole transport layer or in the quantum dot second light-emitting unit (5), deposit DICTRz:CdSe / CdS by solution spin coating method or vacuum evaporation process to form a hole transport layer with a thickness of 40 nm, namely S5; At the position of the quantum dot second light-emitting unit (5) on the hole transport layer or in the quantum dot first light-emitting unit (4), deposit CdSe / CdS or InP quantum dots by solution spin coating method or vacuum evaporation process to form a hole transport layer with a thickness of 40 nm, namely S6; Deposit ZnO on the quantum dot light-emitting layer by solution spin coating method or vacuum evaporation process to form an electron transport layer with a thickness of 30 nm, namely S7; Remove the material deposited in the S2 following process from the surface of the LED blue light-emitting unit by photolithography and chemical etching using an organic solvent, or simultaneously remove the material deposited between the LED blue light-emitting unit (3), the quantum dot first light-emitting unit (4), and the quantum dot second light-emitting unit (5) to form the quantum dot first light-emitting unit (4) and the quantum dot second light-emitting unit (5), namely S8; A method for manufacturing a quantum dot hybrid integrated multi-color display, characterized by including depositing a transparent conductive film ITO with a thickness of 20 - 1000 nm on the surfaces of the blue light-emitting unit (3, the quantum dot first light-emitting unit (4), and the quantum dot second light-emitting unit (5) by a sputtering process to form a common cathode, namely S9.

8. The method for manufacturing a quantum dot hybrid integrated multi-color display according to claim 7, characterized in that one or more of Mg, Ag, Au, Al, Cu, Cr, Ti are deposited on the ITO surface in the region between the LED blue light-emitting unit (3), the quantum dot first light-emitting unit (4), and the quantum dot second light-emitting unit (5) to form one or more metal layers as an interconnecting electrode.

9. The method for manufacturing a quantum dot hybrid integrated multi-color display according to claim 8, characterized in that a filling layer (6) formed by an OC adhesive is applied to the wafer surface by a spin coating or dispensing process, and then the entire device is sealed using a cover glass (7).

10. The method for manufacturing a quantum dot hybrid integrated multi-color display according to claim 2, wherein Prepare a CMOS wafer substrate (1) and a blue LED epitaxial wafer. After metal-bonding the CMOS wafer substrate (1) and the blue LED epitaxial wafer, remove the LED epitaxial wafer substrate, perform pixel patterning through photolithography and etching processes to form a silicon-based CMOS wafer having a blue light-emitting unit (3). In the IBE process, etch the metal on the surface of the CMOS wafer, leaving only the metal in the LED blue light-emitting unit (3). Deposit SiO2 with a thickness of 500 nm on the sidewalls of the blue light-emitting unit 3 by ALD or PECVD. Further, through photolithography and dry etching processes, S21 for forming a passivation layer, and By sputtering, deposit at least one of ITO, Mg, Ag, Au, Al, Cu, Cr, Ti, Ni with a thickness of 50 - 1000 nm on the upper surface of the LED blue light-emitting unit (3) to form a transparent cathode layer of the LED blue light-emitting unit (3), S22, and Deposit one or more of DBR, ODR, Mg, Ag, Au, Al, Cu, Cr, Ti, Ni on the surface of the transparent cathode layer to form a reflective layer (11). After yellow light and etching treatment, make the length of the reflective layer (11) about 0.5 - 30 μm shorter than the length of the LED blue light-emitting unit (3), S23, and Arrange reflective lenses (8) on both the left and right sides of the LED blue light-emitting unit (3), Until the light emitted from the LED blue light-emitting unit is transmitted to the surface of the reflective lens (8), it is reflected by the anode of the LED blue light-emitting unit and the reflective layer (11), and the reflective lens 8 emits the incident light parallel to the upper surface, S24, and Prepare 50 - 100 nm SiO2 on the surface of the reflective layer 11 by PECVD, yellow light, and etching processes, S25, and By yellow light, deposition, and etching processes, deposit one or more metals of Mg, Ag, Au, Al, Cu, Cr, Ti, Ni with a thickness of 0.5 - 2 μm on the upper surface of the outer peripheral layer of the LED blue light-emitting unit to form a cathode 10 of the LED blue light-emitting unit, S26, and By means of a yellow light, evaporation, and etching process, one or more of Mg, Ag, Au, Al, Cu, Cr, Ti, and Ni with a thickness of 0.5 - 2 μm are deposited on the SiO2 surface to fabricate the anodes of the quantum dot first light-emitting unit 4 and the quantum dot second light-emitting unit (5), and S27 that connects the anodes of the quantum dot first light-emitting unit (4) and the quantum dot second light-emitting unit (5) to the anodes on both sides of the LED blue light-emitting unit (3), By ALD or PECVD, SiO2 with a thickness of 500 nm is deposited, and further, by means of photolithography and a dry etching process, the SiO2 layer on the anodes of the quantum dot first light-emitting unit (4) and the quantum dot second light-emitting unit (5) is etched and removed, and S28 that covers only the positions other than the quantum dot first light-emitting unit (4) and the quantum dot second light-emitting unit (5), By means of a solution spin coating method or a vacuum evaporation process, PEDOT:PSS is deposited on the anode surfaces of the quantum dot first light-emitting unit 4 and the quantum dot second light-emitting unit (5) to form a hole injection layer with a thickness of 30 nm, and S29 that fabricates the first light-emitting unit hole injection layer (402) and the second light-emitting unit hole injection layer (502), By means of a solution spin coating method or a vacuum evaporation process, TFB is deposited on the hole injection layer to form a hole transport layer with a thickness of 30 nm, and S210 that fabricates the first light-emitting unit hole transport layer (403) and the second light-emitting unit hole transport layer (503), At the position of the quantum dot first light-emitting unit (4) or the position of the quantum dot second light-emitting unit (5) on the hole transport layer, by means of a solution spin coating method or a vacuum evaporation process, DICTRz:CdSe / CdS quantum dots are deposited to form a hole transport layer with a thickness of 40 nm, and S211, At the position of the quantum dot second light-emitting unit (5) or the position of the quantum dot first light-emitting unit (4) on the hole transport layer, by means of a solution spin coating method or a vacuum evaporation process, CdSe / CdS or InP quantum dots are deposited to form a hole transport layer with a thickness of 40 nm, and S212, By means of a solution spin coating method or a vacuum evaporation process, ZnO is deposited on the light-emitting layer to form an electron transport layer with a thickness of 30 nm, and S213, In the sputtering process, a transparent conductive film ITO with a thickness of 20 - 1000 nm is deposited on the entire CMOS wafer substrate 1, the quantum dot first light-emitting unit (4), the quantum dot second light-emitting unit (5), the cathode of the LED blue light-emitting unit (10), and the cathode ring, so that the cathode ring on the wafer substrate simultaneously supplies power to the LED blue light-emitting unit (3), the quantum dot first light-emitting unit (4), and the quantum dot second light-emitting unit (5) to form a common cathode S214, and A method for manufacturing a quantum dot hybrid integrated multi-color display, characterized by including the above.

11. The method for manufacturing a quantum dot hybrid integrated multi-color display according to claim 10, characterized in that one or more of Mg, Ag, Au, Al, Cu, Cr, and Ti are deposited on the ITO surface in the region between the quantum dot first light-emitting unit (4) and the quantum dot second light-emitting unit (5) to form one or more metal layers as interconnecting electrodes.

12. The method for manufacturing a quantum dot hybrid integrated multi-color display according to claim 11, characterized in that a filling layer (6) formed by an OC adhesive is applied to the wafer surface by a spin coating or dispensing process, and then the entire device is sealed using a cover glass (7).

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