Substrate Processing Equipment

Abstract

To improve the uniformity of processing to a substrate.SOLUTION: A substrate processing apparatus includes a treatment vessel, a stage, a top plate, a drive part, an exhaust port and a controller. The stage provided in the treatment vessel places a substrate; the top plate is provided at a position facing the stage in the treatment vessel; the drive part lifts the stage; the exhaust port provided in the side wall of the treatment vessel exhausts gas in the treatment vessel; the controller controlling the drive part controls a conductance between a treatment space between the stage and the top plate and a space between the stage and the exhaust port by controlling an interval between a peripheral part of the stage and a counter member arranged at a position facing a peripheral part in the treatment vessel.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] Various aspects and embodiments of the present disclosure relate to substrate processing apparatus. [Background technology]

[0002] A technique is known in which a gas containing two types of monomers is supplied into a processing vessel containing a substrate to be processed, and an organic film is formed on the substrate by a polymerization reaction of the two types of monomers. For example, a technique is known in which a polymerized film is formed on the substrate to be processed by a vacuum deposition polymerization reaction of an aromatic alkyl, alicyclic, or aliphatic diisocyanate monomer and an aromatic alkyl, alicyclic, or aliphatic diamine monomer (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] International Publication No. 2008 / 129925 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a substrate processing apparatus capable of improving processing uniformity for a substrate. [Means for solving the problem]

[0005] One aspect of the present disclosure is a substrate processing apparatus including a processing vessel, a stage, a top plate, a drive unit, an exhaust port, and a control device. The stage is provided within the processing vessel, and a substrate is placed on the stage. The top plate is provided in a position within the processing vessel opposite the stage. The drive unit raises and lowers the stage. The exhaust port is provided in a sidewall of the processing vessel, and exhausts gas from within the processing vessel. The control device controls the drive unit to control the gap between a periphery of the stage and an opposing member located in a position opposite the periphery within the processing vessel, thereby controlling the conductance of a processing space between the stage and the top plate and a space between the exhaust port. [Effects of the Invention]

[0006] Various aspects and embodiments of the present disclosure may improve processing uniformity across a substrate. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a schematic cross-sectional view illustrating an example of a substrate processing apparatus according to an embodiment of the present disclosure. [Figure 2] FIG. 2 is a diagram showing an example of the structure near the periphery of the stage. [Figure 3] FIG. 3 is a diagram showing another example of the structure near the periphery of the stage. [Figure 4] FIG. 4 is a diagram showing another example of the structure near the periphery of the stage. [Figure 5] FIG. 5 is a diagram showing another example of the structure near the periphery of the stage. [Figure 6] FIG. 6 is a diagram showing an example of the relationship between the dimensions near the periphery of the stage and the conductance. [Figure 7] FIG. 7 is a diagram showing another example of the structure near the periphery of the stage. [Figure 8] FIG. 8 is a cross-sectional view showing another example of the structure of the insulating member. [Figure 9] FIG. 9 is a cross-sectional view showing another example of the structure of the insulating member. [Figure 10]FIG. 10 is a diagram showing another example of the structure of the side surface of the protrusion of the insulating member. [Figure 11] FIG. 11 is a diagram showing an example of a region where the protruding portion of the insulating member and the protruding portion of the cover member overlap in a direction along the xy plane. [Figure 12] FIG. 12 is a diagram showing an example of the deviation in the amount of exhaust gas in the circumferential direction of the substrate. [Figure 13] FIG. 13 is a diagram showing an example of a region where the protruding portion of the insulating member and the protruding portion of the cover member overlap in a direction along the xy plane. [Figure 14] FIG. 14 is a diagram showing an example of the deviation in the amount of exhaust gas in the circumferential direction of the substrate. [Figure 15] FIG. 15 is a diagram showing another example of the structure near the periphery of the stage. [Figure 16] FIG. 16 is a diagram showing an example of the positions of the stage and the cover member during cleaning. [Figure 17] FIG. 17 is a diagram showing an example of the positional relationship between the protrusion of the insulating member and the protrusion of the cover member. [Figure 18] FIG. 18 is a diagram showing another example of the shape of the protrusion of the cover member. DETAILED DESCRIPTION OF THE INVENTION

[0008] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the disclosed substrate processing apparatus will be described in detail with reference to the accompanying drawings. However, the disclosed substrate processing apparatus is not limited to the following embodiments.

[0009] Incidentally, ensuring that the gas supplied into the processing vessel is evenly distributed over the entire substrate is one of the important factors for improving the uniformity of substrate processing. Therefore, in some cases, an attempt is made to exhaust the gas evenly without uneven distribution within the processing vessel by providing a slit-shaped exhaust port in the sidewall of the processing vessel in which the substrate is housed so as to surround the periphery of the substrate and exhausting the gas from the processing vessel through the exhaust port.

[0010] However, when the amount of gas exhausted from the exhaust port is large, the exhaust port located closer to the exhaust pump will exhaust more gas than the exhaust port located farther from the exhaust pump, making it difficult to exhaust the gas evenly. Therefore, it is possible to reduce the amount of gas exhausted from the exhaust port by narrowing the opening of the slit-shaped exhaust port and reducing the conductance of the exhaust port. However, due to manufacturing errors, assembly errors, thermal expansion, etc., the size of the exhaust port opening may deviate from the design value. Even a slight change in the size of the exhaust port opening can significantly change the amount of gas exhausted from the exhaust port, making it difficult to achieve the design value for the size of the exhaust port opening.

[0011] Therefore, the present disclosure provides a technique that can improve the uniformity of processing on a substrate.

[0012] [Configuration of the substrate processing apparatus 10] 1 is a schematic cross-sectional view illustrating an example of a substrate processing apparatus 10 according to an embodiment of the present disclosure. The substrate processing apparatus 10 includes an apparatus main body 200 and a control device 100 that controls the apparatus main body 200. The apparatus main body 200 includes a processing vessel 209. The processing vessel 209 includes a lower vessel 201, an exhaust duct 202, a support structure 210, and a shower head 230.

[0013] The lower vessel 201 is made of a metal such as aluminum. The exhaust duct 202 is provided on the periphery of the upper part of the lower vessel 201. An annular insulating member 204 is disposed above the exhaust duct 202. The shower head 230 is provided above the lower vessel 201 and is supported by the insulating member 204. The shower head 230 is an example of a top plate. A support structure 210 on which a substrate W is placed is provided approximately in the center of the lower vessel 201. Hereinafter, the space within the processing vessel 209 surrounded by the lower vessel 201, the exhaust duct 202, the support structure 210, and the shower head 230 will be referred to as a processing space S. P It is defined as:

[0014] An opening 205 for loading and unloading the substrate W is formed in the sidewall of the lower vessel 201. The opening 205 is opened and closed by a gate valve G. The exhaust duct 202 has a hollow rectangular cross section and extends in an annular shape along the periphery of the upper part of the lower vessel 201. A slit-shaped exhaust port 203 is formed in the exhaust duct 202 along the direction in which the exhaust duct 202 extends. The exhaust port 203 is arranged outside the area of the substrate W, along the periphery of the substrate W placed on the support structure 210, and is positioned in the processing space S. P Exhaust the gas inside.

[0015] One end of an exhaust pipe 206 is connected to the exhaust duct 202. The other end of the exhaust pipe 206 is connected to an exhaust device 208 having a vacuum pump or the like via a pressure adjustment valve 207 such as an APC (Auto Pressure Controller) valve. The pressure adjustment valve 207 is controlled by the control device 100, and the pressure in the processing space S P The pressure inside the chamber is controlled to a preset pressure.

[0016] Heaters (not shown) are provided on the sidewall of exhaust duct 202 and on the upper surface of shower head 230, and exhaust duct 202 and shower head 230 are heated to a temperature of, for example, 200° C. or higher. This makes it possible to suppress adhesion of reaction by-products (so-called deposits) to exhaust duct 202 and shower head 230. Heaters may also be provided in exhaust pipe 206, pressure adjustment valve 207, and exhaust device 208, and heated to a temperature at which deposits are less likely to adhere.

[0017] The support structure 210 has a stage 211 and a support part 212. The stage 211 is made of a metal such as aluminum, and a substrate W is placed on the upper surface. The shower head 230 is provided at a position corresponding to the stage 211. An annular cover member 217 is provided outside the area of the stage 211 on which the substrate W is placed. The support part 212 is made of a metal such as aluminum, and is cylindrical, and supports the stage 211 from below.

[0018] A heater 214 is embedded in the stage 211. The heater 214 heats the substrate W placed on the stage 211 in accordance with the power supplied thereto. The power supplied to the heater 214 is controlled by the control device 100.

[0019] Furthermore, a flow path 215 through which a coolant flows is formed within the stage 211. A chiller unit (not shown) is connected to the flow path 215 via pipes 216a and 216b. The coolant adjusted to a predetermined temperature by the chiller unit is supplied to the flow path 215 via pipe 216a, and the coolant that has circulated within the flow path 215 is returned to the chiller unit via pipe 216b. The stage 211 is cooled by the coolant circulating within the flow path 215. The chiller unit is controlled by the control device 100.

[0020] The support part 212 is disposed in the lower vessel 201 so as to pass through an opening formed in the bottom of the lower vessel 201. The support part 212 is raised and lowered by driving the lifting mechanism 240. When the substrate W is loaded, the support structure 210 is lowered by driving the lifting mechanism 240, and the gate valve G is opened. Then, the substrate W is loaded into the lower vessel 201 through the opening 205 and placed on the stage 211. Then, the gate valve G is closed, and the support structure 210 is raised by driving the lifting mechanism 240, and a film formation process is performed on the substrate W. When the substrate W is unloaded, the support structure 210 is lowered by driving the lifting mechanism 240, and the gate valve G is opened. Then, the substrate W is unloaded from the stage 211 through the opening 205.

[0021] The shower head 230 has a diffusion chamber 231a and a diffusion chamber 231b. The diffusion chamber 231a and the diffusion chamber 231b are not connected to each other. A gas supply unit 220 is connected to the diffusion chamber 231a and the diffusion chamber 231b. Specifically, a valve 224a, a mass flow controller (MFC) 223a, a vaporizer 222a, and a raw material supply source 221a are connected to the diffusion chamber 231a via a pipe 225a. The raw material supply source 221a is a supply source of isocyanate, which is an example of a first monomer. The vaporizer 222a vaporizes the isocyanate liquid supplied from the raw material supply source 221a. The MFC 223a controls the flow rate of the isocyanate vapor vaporized by the vaporizer 222a. The valve 224a controls the supply and stop of the isocyanate vapor to the pipe 225a.

[0022] The diffusion chamber 231b is connected to a valve 224b, an MFC 223b, a vaporizer 222b, and a raw material supply source 221b via a pipe 225b. The raw material supply source 221b is a supply source of amine, which is an example of a second monomer. The vaporizer 222b vaporizes the amine liquid supplied from the raw material supply source 221b. The MFC 223b controls the flow rate of the amine vapor vaporized by the vaporizer 222b. The valve 224b controls the supply and stop of the amine vapor to the pipe 225b.

[0023] The showerhead 230 is also connected to a valve 224c, an MFC 223c, and a cleaning gas supply source 221c via pipes 225a and 225b. The cleaning gas supply source 221c supplies a cleaning gas containing molecules including, for example, oxygen atoms or fluorine atoms. The MFC 223c controls the flow rate of the cleaning gas supplied from the cleaning gas supply source 221c. The valve 224c controls the supply and stop of the cleaning gas to the pipes 225a and 225b.

[0024] The diffusion chamber 231a is connected to the processing space S via a plurality of outlets 232a. PThe diffusion chamber 231b is in communication with the processing space S through a plurality of outlets 232b. P The isocyanate vapor and cleaning gas supplied into the diffusion chamber 231a through the pipe 225a diffuse within the diffusion chamber 231a and are discharged into the processing space S through the discharge port 232a. P The amine vapor and cleaning gas supplied into the diffusion chamber 231b through the pipe 225b diffuse in the diffusion chamber 231b and are discharged into the processing space S through the discharge port 232b. P The vapor of isocyanate and amine is discharged in a shower into the processing space S through the discharge ports 232a and 232b. P After being discharged into the processing space S P The polymer is mixed in the liquid phase and a film of the polymer having urea bonds is formed on the surface of the substrate W placed on the stage 211.

[0025] For example, a linear polyurea can be produced by using a diisocyanate as the first monomer and a diamine (e.g., a primary amine) as the second monomer. A combination of a diisocyanate and a diamine is, for example, 4,4'-diphenylmethane diisocyanate (MDI) and 1,12-diaminododecane (DAD). A combination of a diisocyanate and a diamine is, for example, 1,3-bis(isocyanatomethyl)cyclohexane (H6XDI) and 1,12-diaminododecane (DAD). A combination of a diisocyanate and a diamine is, for example, 1,3-bis(isocyanatomethyl)cyclohexane (H6XDI) and 1,3-bis(aminomethyl)cyclohexane (H6XDA). Examples of the combination of diisocyanate and diamine include 1,3-bis(isocyanatomethyl)cyclohexane (H6XDI) and hexamethylenediamine (HMDA). Examples of the combination of diisocyanate and diamine include m-xylylenediisocyanate (XDI) and m-xylylenediamine (XDA). Examples of the combination of diisocyanate and diamine include m-xylylenediisocyanate (XDI) and benzylamine (BA).

[0026] For example, a crosslinkable polyurea can be produced by using a diisocyanate as the first monomer and a triamine (e.g., a primary amine) or tetraamine (e.g., a secondary amine) as the second monomer. A trimer having a urea bond can be produced by using a monoisocyanate as the first monomer and a diamine (e.g., a primary amine) as the second monomer. A dimer having a urea bond can be produced by using a monoisocyanate as the first monomer and a monoamine (e.g., a primary amine) as the second monomer.

[0027] An RF (Radio Frequency) power supply 260 that supplies RF power for generating plasma is connected to the shower head 230 via a matching box 261. The shower head 230 functions as a cathode electrode with respect to the stage 211. P In cleaning the processing space S, gas is supplied from the gas supply unit 220 through the shower head 230. P A cleaning gas is supplied into the processing space S from an RF power source 260 via a matching box 261. P RF power is supplied to the processing space S P The cleaning gas is converted into plasma in the processing space S. P Internal cleaning is carried out.

[0028] The control device 100 includes a memory, a processor, and an input / output interface. The memory stores a control program, a processing recipe, etc. The processor reads the control program from the memory and executes it, and controls each part of the device main body 200 via the input / output interface based on the recipe, etc. stored in the memory.

[0029] [Structure near the edge of Stage 211] 2 is a diagram showing an example of the structure near the periphery of the stage 211. Outside the region of the stage 211 on which the substrate W is placed, a ring-shaped cover member 217 is provided. In this embodiment, the cover member 217 protrudes from the periphery of the stage 211 in a direction from the stage 211 toward the shower head 230. When the stage 211 is raised by driving the lifting mechanism 240, the distance h1 between the upper surface B of the cover member 217 and the lower surface A of the insulating member 204 becomes smaller within a distance L1 of the upper surface B of the cover member 217. As a result, the processing space S P This reduces the conductance between the exhaust port 203 and the exhaust port 203. In this embodiment, during the film formation process on the substrate W, the distance L1 is set to, for example, 20 mm, and the distance h1 is set to, for example, 10 mm.

[0030] Here, if the amount of gas exhausted from exhaust port 203 is adjusted by adjusting the width of the opening of exhaust port 203, the size of the opening of exhaust port 203 may deviate from the design value due to manufacturing errors, assembly errors, thermal expansion, etc. Even a slight change in the size of the opening of exhaust port 203 may result in a large change in the amount of gas exhausted from exhaust port 203. Therefore, it is difficult to accurately adjust the size of the opening of exhaust port 203 to the design value.

[0031] In contrast to this, in this embodiment, the conductance between the upper surface B of the cover member 217 and the lower surface A of the insulating member 204 can be adjusted with high precision by driving the lifting mechanism 240. This makes it possible to keep the amount of gas exhausted from the exhaust port 203 low, and to prevent unevenness in the amount of gas exhausted in the circumferential direction of the substrate W.

[0032] Furthermore, if the opening width of the exhaust port 203 is fixedly adjusted, it is difficult to increase the amount of gas exhausted when replacing the gas in the processing vessel 209. This makes it time-consuming to replace the gas in the processing vessel 209, making it difficult to improve the processing throughput. In contrast, in this embodiment, the stage 211 is lowered by driving the lifting mechanism 240, which makes it easy to increase the conductance between the upper surface B of the cover member 217 and the lower surface A of the insulating member 204. This reduces the time required to replace the gas in the processing vessel 209, thereby improving the processing throughput.

[0033] In this embodiment, the cover member 217 and the stage 211 are configured as separate members, but in another embodiment, the cover member 217 may be configured as a part of the stage 211, being integrated with the stage 211. The cover member 217 is an example of a peripheral portion. The insulating member 204 is an example of an opposing member.

[0034] An embodiment has been described above. As described above, the substrate processing apparatus 10 in this embodiment includes a processing vessel 209, a stage 211, a shower head 230, a lifting mechanism 240, an exhaust port 203, and a control device 100. The stage 211 is provided in the processing vessel 209, and a substrate W is placed thereon. The shower head 230 is provided in a position facing the stage 211 in the processing vessel 209. The lifting mechanism 240 raises and lowers the stage. The exhaust port 203 is provided in a sidewall of the processing vessel 209 and exhausts gas from within the processing vessel 209. The control device 100 controls the lifting mechanism 240 to control the distance between the cover member 217 of the stage 211 and the insulating member 204, which is disposed in the processing vessel 209 at a position facing the cover member 217. In this way, the control device 100 controls the processing space S between the stage 211 and the shower head 230. P and the exhaust port 203. This makes it possible to improve the uniformity of processing on the substrate W.

[0035] In the above embodiment, the shower head 230 is provided with a plurality of outlets 232a and 232b through which the processing gas passes, thereby preventing uneven distribution of the processing gas in the processing vessel 209.

[0036] In the above-described embodiment, the shower head 230 supplies a first process gas containing a first monomer and a second process gas containing a second monomer into the process chamber 209 from different outlets 232a and 232b, respectively, to form a polymer film of the first monomer and the second monomer on the substrate W placed on the stage 211. The first monomer is, for example, an isocyanate, and the second monomer is, for example, an amine, and the polymer formed on the substrate W contains a urea bond. The film thickness of the polymer formed on the substrate W is affected by the distribution of the first monomer gas and the second monomer gas on the substrate W. In this embodiment, the uneven distribution of the first monomer gas and the second monomer gas is suppressed, so that a polymer film containing a urea bond with less unevenness in film quality and film thickness can be formed.

[0037] [others] The technology disclosed in this application is not limited to the above-described embodiment, and various modifications are possible within the scope of the gist thereof.

[0038] For example, in the example of FIG. 2, a cover member 217 is provided on the periphery of the stage 211, protruding from the stage 211 in a direction toward the shower head 230, but the disclosed technology is not limited to this. For example, as shown in FIG. 3, the insulating member 204 (protrusion portion 204a in FIG. 3) at a portion facing the periphery of the stage 211 may protrude in a ring shape in a direction toward the shower head 230 from the stage 211. In the example of FIG. 3, the cover member 217 is not provided on the periphery of the stage 211. Even in such a configuration, the processing space S can be lifted by driving the lifting mechanism 240. P and the exhaust port 203 can be adjusted.

[0039] 4, a cover member 217 may be provided on the periphery of the stage 211, and the insulating member 204 (protrusion 204a in FIG. 4) at a portion facing the cover member 217 may protrude in a ring shape in the direction toward the cover member 217. Even in this configuration, the processing space SP and the exhaust port 203 can be adjusted.

[0040] 5, the lower surface A of the insulating member 204 may be provided with a protrusion 204a that protrudes in an annular shape in a direction from the shower head 230 toward the stage 211. The protrusion 204a is an example of a second protrusion. The protrusion 204a is provided at a position where a predetermined distance h2 is between a side surface D of the protrusion 204a and a side surface C of the cover member 217 in the z direction in FIG. 5. The lifting mechanism 240 controls the size of an overlapping area between the side surface D of the protrusion 204a and the side surface C of the cover member 217 when viewed from a direction along the xy plane in FIG. 5. The distance in the z direction between the overlapping area between the side surface D of the protrusion 204a and the side surface C of the cover member 217 is defined as L2. In this embodiment, in the film formation process for the substrate W, the distance h2 is, for example, 2 mm, and the distance L2 is, for example, 5 mm to 50 mm.

[0041] When the lifting mechanism 240 is driven to increase the overlapping area between the side surface D of the protrusion 204a and the side surface C of the cover member 217, the conductance of the space between the side surface D of the protrusion 204a and the side surface C of the cover member 217 decreases. On the other hand, when the lifting mechanism 240 is driven to decrease the overlapping area between the side surface D of the protrusion 204a and the side surface C of the cover member 217, the conductance of the space between the side surface D of the protrusion 204a and the side surface C of the cover member 217 increases. Therefore, even in this configuration, the lifting mechanism 240 can be driven to increase the amount of the processing space S P and the exhaust port 203 can be adjusted.

[0042] FIG. 6 is a diagram showing an example of the relationship between the dimensions near the periphery of the stage 211 and the conductance. In FIG. 6, it is assumed that in the configuration illustrated in FIG. 5, distance L2 is longer than distance L1, and distance h1 is at least twice as long as distance h2. Also, in FIG. 6, "none" indicates a case where no protrusion 204a is provided. The vertical axis of FIG. 6 represents a value calculated using the following formula (1).

number

[0043] 6, in the range where the distance L2 is 10 mm or more, the value of Cμ / P increases almost linearly with an increase in the distance L2 at any distance h2. On the other hand, in the range where the distance L2 is less than 10 mm, the change in the value of Cμ / P is greater when the protrusion 204a is not provided than when the protrusion 204a is provided. In other words, in the range where the distance L2 is less than 10 mm, the influence of the conductance between the upper surface B of the cover member 217 and the lower surface A of the insulating member 204 becomes large, and the influence of the change in conductance between the side surface C of the cover member 217 and the side surface D of the protrusion 204a becomes small. Therefore, in the range where the distance L2 is 10 mm or more, by controlling the distance L2 and the distance h2 by driving the lifting mechanism 240, the processing space S can be increased. P and the exhaust port 203 can be adjusted with greater precision.

[0044] 5, the size of the overlapping area between the side surface D of the protrusion 204a and the side surface C of the cover member 217 is controlled by driving the lifting mechanism 240, but the disclosed technology is not limited to this. For example, as shown in FIG. 7, the cover member 217 may be provided with a protrusion 217a that protrudes in an annular shape in a direction from the stage 211 toward the shower head 230. The protrusion 217a is an example of a first protrusion. The lower surface of the insulating member 204 may be provided with a protrusion 204a that protrudes in an annular shape in a direction from the shower head 230 toward the stage 211. Then, the size of the overlapping area between the side surface of the protrusion 204a and the side surface of the protrusion 217a is controlled by driving the lifting mechanism 240 when viewed from a direction along the xy plane in FIG. Even in such a configuration, the processing space S P and the exhaust port 203 can be adjusted.

[0045] 7, the size of the area where the side surface of the protrusion 204a and the side surface of the cover member 217 overlap is controlled, but for example, as shown in FIG. 8, the size of the area where the side surface of the shower head 230 and the side surface of the cover member 217 overlap may be controlled. P and the exhaust port 203 can be adjusted.

[0046] 5, the side surface of protrusion 204a on the cover member 217 side is flat, but the disclosed technology is not limited to this. As another example, a spiral groove 204b may be formed on the side surface of protrusion 204a on the cover member 217 side, as shown in Fig. 9. When the side surface of protrusion 204a is expanded in a direction along the side surface of protrusion 204a on the cover member 217 side, it becomes as shown in Fig. 10, for example.

[0047] Then, consider a case where the cover member 217 is raised by driving the lifting mechanism 240, and the overlapping range in the z direction between the cover member 217 and the protrusion 204a is R1, as shown in FIG. 11. In this case, in a cross section (cross section AA in FIG. 11) along the xy plane at the top end of the cover member 217, the range of the groove 204b is R2. When the cover member 217 and the protrusion 204a overlap, the processing space S P The gas inside is exhausted not only through the gap between the side surface of the cover member 217 and the side surface of the protrusion 204a, but also through the groove 204b in the range R2 at the top end of the cover member 217.

[0048] Therefore, in the circumferential direction of the substrate W, the amount of exhaust is large in the portion of the groove 204b in the range R2, as shown in Fig. 12, for example. Fig. 12 shows the cross section AA in Fig. 11. In Fig. 12, the size of the exhaust amount is represented by the thickness of the arrow.

[0049] Also, consider a case where the cover member 217 is further raised by driving the lifting mechanism 240, and the overlapping range in the z direction between the cover member 217 and the protrusion 204a becomes R3, as shown in FIG. 13, for example. In this case, in a cross section (cross section AA in FIG. 13) along the xy plane at the upper end of the cover member 217, the range of the groove 204b is R4. Therefore, in the circumferential direction of the substrate W, the exhaust volume in the portion of the groove 204b in the range R4 becomes large, as shown in FIG. 14, for example. FIG. 14 shows the cross section AA in FIG. 13. Furthermore, in FIG. 14, the magnitude of the exhaust volume is represented by the thickness of the arrow.

[0050] In this way, the spiral groove 204b is formed on the side surface of the protrusion 204a on the cover member 217 side, so that the processing space S P and the exhaust port 203, as well as the exhaust amount in the circumferential direction of the substrate W. By adjusting the exhaust amount in the circumferential direction of the substrate W so as to increase the exhaust amount in areas where the exhaust amount is low and decrease the exhaust amount in areas where the exhaust amount is high, it is possible to suppress bias in the exhaust amount in the circumferential direction of the substrate W.

[0051] 9 to 14, in the configuration illustrated in FIG. 5, the spiral groove 204b is formed on the side surface of the protrusion 204a on the cover member 217 side. However, in the configuration illustrated in FIG. 7, the spiral groove 204b may be formed on the side surface of the protrusion 217a on the protrusion 204a side. In addition, in the configuration illustrated in FIG. 8, the spiral groove 204b may be formed on the side surface of the protrusion 217a on the shower head 230 side. In addition, in the configuration illustrated in FIG. 5, the spiral groove 204b may be formed on the side surface of the cover member 217 on the protrusion 204a side. In addition, in the configuration illustrated in FIG. 7, the spiral groove 204b may be formed on the side surface of the protrusion 204a on the protrusion 217a side. In addition, in the configuration illustrated in FIG. 8, the spiral groove 204b may be formed on the side surface of the shower head 230 on the protrusion 217a side.

[0052] 2 may have a protrusion 217b protruding toward the side opposite to the stage 211, as shown in FIG. 15, on the side surface of the cover member 217, and a protrusion 201a protruding toward the inside of the processing vessel 209 may be provided on the inner side surface of the lower vessel 201. The protrusion 217b is an example of a first protrusion, and the protrusion 201a is an example of a second protrusion. When cleaning the processing vessel 209, the control device 100 lowers the stage 211 using the lifting mechanism 240 and places the protrusion 217b on the protrusion 201a. As a result, as shown in FIG. 16, for example, the stage 211 and the cover member 217 are separated from each other, and then cleaning of the processing vessel 209 is performed. This allows reaction by-products (so-called deposits) that have entered between the cover member 217 and the stage 211 during film formation on the substrate W to be efficiently removed by cleaning.

[0053] 7, when the center O' of the cover member 217 is aligned with the center O of the protrusion 204a, as shown in Fig. 17(a), the width between the protrusion 204a and the protrusion 217a becomes approximately equal. This makes it possible to make the exhaust amount approximately equal in the circumferential direction of the substrate W.

[0054] On the other hand, for example, as shown in FIG. 17(b), if the cover member 217 is arranged on the stage 211 so that the center O' of the cover member 217 and the center O of the protrusion 204a are intentionally not aligned, the width between the protrusion 204a and the protrusion 217a will be uneven. As a result, there will be relatively wide and relatively narrow widths between the protrusion 204a and the protrusion 217a in the circumferential direction of the substrate W. By arranging the cover member 217 on the stage 211 so that the center O' of the cover member 217 is offset from the center O of the protrusion 204a, it is possible to intentionally create a bias in the amount of exhaust in the circumferential direction of the substrate W, as shown in FIG. 17(b), for example. The position of the cover member 217 relative to the stage 211 can be adjusted when the cover member 217 is placed on the stage 211, for example, by a transfer robot or the like that transfers the cover member 217. This allows the exhaust volume in the circumferential direction of the substrate W to be adjusted so as to increase the exhaust volume in areas where the exhaust volume is low and decrease the exhaust volume in areas where the exhaust volume is high, thereby suppressing bias in the exhaust volume in the circumferential direction of the substrate W.

[0055] Furthermore, although the height of the protrusions 217a of the cover member 217 illustrated in FIG. 7 is substantially constant, the disclosed technology is not limited to this. The protrusions 217a may have different heights depending on the circumferential position, as shown in FIG. 18, for example. For example, the cover member 217 is disposed on the stage 211 in an orientation such that the height of the protrusions 217a is low in the direction in which the exhaust amount is desired to be increased and the height of the protrusions 217a is high in the direction in which the exhaust amount is desired to be decreased. This makes it possible to intentionally create a bias in the exhaust amount in the circumferential direction of the substrate W. The orientation of the cover member 217 relative to the stage 211 is adjusted, for example, by a transfer robot that transfers the cover member 217 when the cover member 217 is placed on the stage 211. This makes it possible to adjust the exhaust amount in the circumferential direction of the substrate W so as to increase the exhaust amount in areas where the exhaust amount is low and decrease the exhaust amount in areas where the exhaust amount is high, thereby suppressing a bias in the exhaust amount in the circumferential direction of the substrate W.

[0056] Furthermore, the configurations illustrated in FIGS. 9 to 14, the configuration illustrated in FIG. 17, and the configuration illustrated in FIG. 18 may be used in combination.

[0057] In the above-described embodiment, a polymer film having a urea bond (—NH—CO—NH—) is formed on the surface of the substrate W using an isocyanate as the first monomer and an amine as the second monomer. However, the disclosed technology is not limited to this. For example, a polymer film having a 2-aminoethanol bond (—NH—CH—CH(OH)—) may be formed on the surface of the substrate W using an epoxide as the first monomer and an amine as the second monomer. Alternatively, a polymer film having a urethane bond (—NH—CO—O—) may be formed on the surface of the substrate W using an isocyanate as the first monomer and an alcohol as the second monomer. Alternatively, a polymer film having an amide bond (—NH—CO—) may be formed on the surface of the substrate W using an acyl halide as the first monomer and an amine as the second monomer. Alternatively, a polymer film having an imide bond (—CO—N(—)—CO—) may be formed on the surface of the substrate W using a carboxylic anhydride as the first monomer and an amine as the second monomer.

[0058] When a polymer film having an imide bond is formed on the surface of the substrate W, for example, pyromellitic dianhydride (PMDA) can be used as the first monomer, and for example, 4,4'-oxydianiline (44ODA) or hexamethylenediamine (HMDA) can be used as the second monomer.

[0059] In the above embodiment, the substrate processing apparatus 10 has been described as an apparatus that performs film formation, but the disclosed technology is not limited to this. In addition to the apparatus that performs film formation, the disclosed technology can also be applied to an apparatus that performs etching or an apparatus that modifies the properties of the substrate W, as long as the gas distribution in the processing vessel 209 affects the quality of the processing on the substrate W.

[0060] It should be noted that the disclosed embodiments are illustrative in all respects and should not be considered limiting. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0061] G Gate Valve W substrate 10. Substrate processing equipment 100 control device 200 Device body 201 Lower vessel 201a Protrusion 202 Exhaust duct 203 Exhaust port 204 Insulating materials 204a Projection 204b Groove 205 Opening 206 Exhaust pipe 207 Pressure Regulating Valve 208 Exhaust system 209 Processing vessel 210 Support structure Stage 211 212 Support part 214 Heater 215 Channel 216 Piping 217 Cover member 217a Projection 217b Protrusion 220 Gas Supply Unit 221a Raw material source 221b Raw material source 221c Cleaning Gas Supply 222 Vaporizer 223 MFC 224 Valve 225 Piping 230 shower head 231 Diffusion Chamber 232 Discharge port 240 Lifting mechanism 260 RF Power Supply 261 Integrator

Claims

1. A processing vessel; a stage provided in the processing chamber and on which a substrate is placed; a top plate provided in the processing vessel at a position facing the stage; a drive unit that raises and lowers the stage; an exhaust port provided in a sidewall of the processing vessel for exhausting gas from within the processing vessel; a control device that controls the driving unit to control a gap between a peripheral portion of the stage and an opposing member that is disposed in the processing chamber at a position opposing the peripheral portion, thereby controlling conductance of a processing space between the stage and the top plate and a space between the stage and the exhaust port; Equipped with The peripheral portion is a first protrusion disposed annularly on the periphery of the upper surface of the stage so as to surround an area of the stage on which the substrate is placed, and protruding in a direction from the stage toward the top plate; a gap of a predetermined distance is formed between a side surface of the first protrusion and a side surface of the opposing member, The control device controlling the driving unit to control a size of an area where a side surface of the first protrusion and a side surface of the opposing member overlap when viewed from a direction intersecting a direction from the stage toward the top plate, thereby controlling conductance of a processing space between the stage and the top plate and a space between the exhaust port; The substrate processing apparatus has a spiral groove formed on a side surface of the first protrusion facing the side surface of the opposing member.

2. The opposing member is a second protrusion disposed annularly on the underside of the top plate so as to surround the peripheral edge of the stage when viewed from a direction from the top plate toward the stage, and protruding in a direction from the top plate toward the stage; The control device 2. The substrate processing apparatus according to claim 1, wherein the drive unit is controlled to control the size of the area where the side surfaces of the first protrusions and the second protrusions overlap when viewed from a direction intersecting the direction from the top plate to the stage, thereby controlling the conductance of the processing space between the stage and the top plate and the space between the exhaust port.

3. A processing vessel; a stage provided in the processing chamber and on which a substrate is placed; a top plate provided in the processing vessel at a position facing the stage; a drive unit that raises and lowers the stage; an exhaust port provided in a sidewall of the processing vessel for exhausting gas from within the processing vessel; a control device that controls the driving unit to control a gap between a peripheral portion of the stage and an opposing member that is disposed in the processing chamber at a position opposing the peripheral portion, thereby controlling conductance of a processing space between the stage and the top plate and a space between the stage and the exhaust port; Equipped with The opposing member is a second protrusion disposed annularly on the underside of the top plate so as to surround the peripheral edge of the stage when viewed from a direction from the top plate toward the stage, and protruding in a direction from the top plate toward the stage; a gap of a predetermined interval is formed between a side surface of the second protrusion and a side surface of the peripheral edge portion, The control device controlling the driving unit to control a size of an area where a side surface of the second protrusion and a side surface of the peripheral edge portion overlap when viewed from a direction intersecting a direction from the top plate toward the stage, thereby controlling conductance of a processing space between the stage and the top plate and a space between the exhaust port; The substrate processing apparatus has a spiral groove formed on a side surface of the second protrusion that faces the side surface of the peripheral edge portion.

4. the peripheral portion is an annular member placed on the peripheral edge of the stage, a first protrusion protruding toward an opposite side to the stage is provided on a side wall of the peripheral edge portion; a second protrusion protruding into the inside of the processing vessel is provided on an inner sidewall of the processing vessel; The control device 4. A substrate processing apparatus according to claim 1, wherein, when cleaning the processing vessel, the stage is lowered by the drive unit, and the first protrusion is placed on the second protrusion, thereby separating the stage from the peripheral portion, and then cleaning the processing vessel is performed.

5. The substrate processing apparatus according to claim 1 , wherein the top plate is formed with a plurality of outlets through which the processing gas passes.

6. 6. The substrate processing apparatus according to claim 5, wherein the top plate supplies a first processing gas containing a first monomer and a second processing gas containing a second monomer into the processing container from different outlets, thereby forming a polymer film of the first monomer and the second monomer on the substrate placed on the stage.

7. the first monomer is an isocyanate; the second monomer is an amine; The substrate processing apparatus according to claim 6, wherein the polymer formed on the substrate contains a urea bond.

8. the first monomer is a carboxylic acid anhydride; the second monomer is an amine; The substrate processing apparatus according to claim 6 , wherein the polymer formed on the substrate contains an imide bond.

9. the first monomer is an epoxide; the second monomer is an amine; 7. The substrate processing apparatus according to claim 6, wherein the polymer formed on the substrate contains a 2-aminoethanol bond.

10. the first monomer is an isocyanate; the second monomer is an alcohol; The substrate processing apparatus according to claim 6, wherein the polymer formed on the substrate contains a urethane bond.

11. the first monomer is an acyl halide; the second monomer is an amine; 7. The substrate processing apparatus according to claim 6, wherein the polymer formed on the substrate contains an amide bond.

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