SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

Abstract

To improve the in-plane uniformity of temperature of a substrate in liquid treatment.SOLUTION: An apparatus for processing a substrate includes a holding part and a supply part. The holding part adsorbs, holds and rotates the substrate. The supply part supplies a treatment solution to the substrate adsorbed and held on the holding part. The holding part includes a plurality of projection parts projected toward the lower surface of the substrate from a surface facing the lower surface of the substrate and having a projection height of 1 mm or more.SELECTED DRAWING: Figure 5

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] Conventionally, there are known techniques for plating substrates such as semiconductor wafers using a plating solution. Patent Document 1 discloses a technique in which a plating solution is piled on the top surface of a substrate, the substrate is covered with a lid, and then a heater provided in the lid is used to heat the plating solution on the substrate, thereby forming a plating film on the substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2005-133160 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique capable of improving the temperature uniformity across a substrate during liquid processing. [Means for solving the problem]

[0005] A substrate processing apparatus according to one aspect of the present disclosure includes a holder and a supply unit. The holder suction-holds and rotates a substrate. The supply unit supplies a processing liquid to the substrate suction-held by the holder. The holder also includes a plurality of protrusions, each having a protrusion height of 1 mm or more, that protrude from a surface facing the lower surface of the substrate toward the lower surface of the substrate. [Effects of the Invention]

[0006] According to the present disclosure, it is possible to improve the temperature uniformity on the surface of the substrate during liquid processing. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a diagram showing the configuration of a substrate processing apparatus according to an embodiment. [Figure 2] FIG. 2 is a diagram showing the configuration of the plating processing unit according to the embodiment. [Figure 3] FIG. 3 is a graph showing a schematic representation of the temperature change of a substrate during plating processing in a conventional substrate processing apparatus. [Figure 4] FIG. 4 is a plan view of the holding portion according to the embodiment. [Figure 5] FIG. 5 is a diagram showing an example of a cross section taken along line XX in FIG. [Figure 6] FIG. 6 is a graph showing the thickness distribution of the plating film when plating is performed using a holding part in which the protrusion height of the protrusion is 0.3 mm. [Figure 7] FIG. 7 is a graph showing the film thickness distribution of the plating film when plating is performed using a holding part in which the protrusion height is 1 mm. [Figure 8] FIG. 8 is a plan view of the heating unit according to the embodiment. [Figure 9] FIG. 9 is a cross-sectional view of a heating unit according to the embodiment. [Figure 10] FIG. 10 is an enlarged view showing an example of part H shown in FIG. [Figure 11] FIG. 11 is a graph showing the change in the thickness distribution of the plating film when the set temperature of the individual heating unit located immediately above the holding unit is changed. [Figure 12] FIG. 12 is a flowchart showing the procedure of the process executed by the plating processing unit according to the embodiment. [Figure 13] FIG. 13 is a plan view showing a part of a holding portion according to the first modified example. [Figure 14] FIG. 14 is a diagram showing the configuration of a plating unit according to a second modified example. [Figure 15] FIG. 15 is a flowchart showing the procedure of the process executed by the plating processing unit according to the second modified example. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments (hereinafter referred to as "embodiments") for carrying out a substrate processing apparatus and a substrate processing method according to the present disclosure will be described in detail with reference to the drawings. Note that the present disclosure is not limited to these embodiments. Furthermore, the embodiments can be appropriately combined within the scope of not causing any contradiction in the processing content. Furthermore, the same components in the following embodiments will be given the same reference numerals, and redundant explanations will be omitted.

[0009] Furthermore, in the following embodiments, expressions such as "constant," "orthogonal," "perpendicular," or "parallel" may be used, but these expressions do not necessarily mean "constant," "orthogonal," "perpendicular," or "parallel" in the strict sense. In other words, the above expressions allow for deviations due to, for example, manufacturing precision, installation precision, etc.

[0010] In addition, for ease of understanding, the drawings referred to below may show an orthogonal coordinate system in which the X-axis, Y-axis, and Z-axis directions are defined as being orthogonal to each other, with the positive Z-axis direction being the vertically upward direction. Also, the direction of rotation around the vertical axis may be referred to as the θ direction.

[0011] <Configuration of the substrate processing apparatus> Fig. 1 is a diagram showing the configuration of a substrate processing apparatus according to an embodiment. As shown in Fig. 1, the substrate processing apparatus 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are provided adjacent to each other.

[0012] The carry-in / out station 2 includes a carrier mounting table 11 and a transport unit 12. On the carrier mounting table 11, a plurality of carriers C are mounted, each of which accommodates a plurality of substrates, in this embodiment, semiconductor wafers (hereinafter referred to as substrates W), in a horizontal state.

[0013] A plurality of load ports are arranged on the carrier mounting table 11 adjacent to the transfer section 12, and one carrier C is mounted on each of the plurality of load ports.

[0014] The transport section 12 is provided adjacent to the carrier mounting table 11 and includes a substrate transport device 13 and a transfer section 14. The substrate transport device 13 includes a wafer holding mechanism that holds the substrate W. The substrate transport device 13 is capable of moving horizontally and vertically and rotating about a vertical axis, and transports the substrate W between the carrier C and the transfer section 14 using the wafer holding mechanism.

[0015] The processing station 3 is provided adjacent to the transport section 12. The processing station 3 includes a transport section 15 and a plurality of plating processing sections 5. The plurality of plating processing sections 5 are provided side by side on both sides of the transport section 15. The configuration of the plating processing sections 5 will be described later.

[0016] The transfer section 15 includes a substrate transfer device 17 therein. The substrate transfer device 17 includes a wafer holding mechanism that holds the substrate W. The substrate transfer device 17 is capable of moving in the horizontal and vertical directions and rotating about a vertical axis, and transfers the substrate W between the delivery section 14 and the plating processing section 5 using the wafer holding mechanism.

[0017] The substrate processing apparatus 1 also includes a control device 9. The control device 9 is, for example, a computer, and includes a control unit 91 and a storage unit 92. The storage unit 92 stores programs for controlling various processes executed in the substrate processing apparatus 1. The control unit 91 controls the operation of the substrate processing apparatus 1 by reading and executing the programs stored in the storage unit 92.

[0018] Such a program may be recorded on a computer-readable storage medium and installed from that storage medium into the storage unit 92 of the control device 9. Examples of computer-readable storage media include hard disks (HDs), flexible disks (FDs), compact disks (CDs), magnetic optical disks (MOs), and memory cards.

[0019] In the substrate processing apparatus 1 configured as described above, first, the substrate transport device 13 in the loading / unloading station 2 removes the substrate W from the carrier C placed on the carrier mounting table 11 and places the removed substrate W in the transfer section 14. The substrate W placed in the transfer section 14 is then removed from the transfer section 14 by the substrate transport device 17 in the processing station 3 and transported to the plating processing section 5, where it is processed. For example, recesses such as trenches and vias are formed on the surface of the substrate W, and the plating processing section 5 fills these recesses with metal by electroless plating.

[0020] The substrate W processed by the plating processing section 5 is carried out from the plating processing section 5 by the substrate transport device 17 and placed on the delivery section 14. Then, the processed substrate W placed on the delivery section 14 is returned to the carrier C on the carrier mounting table 11 by the substrate transport device 13.

[0021] <Configuration of plating processing section> Next, the configuration of the plating processing section 5 will be described with reference to Fig. 2. Fig. 2 is a diagram showing the configuration of the plating processing section 5 according to the embodiment.

[0022] The plating processing unit 5 is configured to perform liquid processing including electroless plating processing, and includes a chamber 51, a holder 52 disposed in the chamber 51 and holding the substrate W horizontally, and a plating liquid supply unit 53 that supplies a plating liquid L1 (processing liquid) to the surface (upper surface) of the substrate W held by the holder 52.

[0023] In this embodiment, the holder 52 has a chuck member 521 that vacuum-sucks the lower surface (rear surface) of the substrate W. This chuck member 521 is a so-called vacuum chuck type.

[0024] The material of the holding portion 52 is carbon PEEK (polyether ether ketone) resin. Carbon PEEK is PEEK resin containing carbon fiber (carbon fiber reinforced PEEK resin).

[0025] A rotary motor 523 (rotation drive unit) is connected to the holder 52 via a rotary shaft 522. When the rotary motor 523 is driven, the holder 52 rotates together with the substrate W. The rotary motor 523 is supported by a base 524 fixed to the chamber 51. Note that no heat source such as a heater is provided inside the holder 52.

[0026] The plating solution supply unit 53 has a plating solution nozzle 531 that discharges (supplies) the plating solution L1 onto the substrate W held in the holder 52, and a plating solution supply source 532 that supplies the plating solution L1 to the plating solution nozzle 531. The plating solution supply source 532 is configured to supply the plating solution L1, which has been heated or temperature-controlled to a predetermined temperature, to the plating solution nozzle 531 via a plating solution pipe 533. The temperature of the plating solution L1 when discharged from the plating solution nozzle 531 is, for example, 55°C or higher and 75°C or lower, and more preferably 60°C or higher and 70°C or lower. The plating solution nozzle 531 is held by a nozzle arm 56 and configured to be movable.

[0027] The plating solution L1 is a plating solution for autocatalytic (reducing) electroless plating. The plating solution L1 contains, for example, metal ions and a reducing agent. Examples of the metal ions contained in the plating solution L1 include cobalt (Co) ions, nickel (Ni) ions, tungsten (W) ions, copper (Cu) ions, palladium (Pd) ions, gold (Au) ions, and ruthenium (Ru) ions. Examples of the reducing agent contained in the plating solution L1 include hypophosphorous acid, dimethylamine borane, and glyoxylic acid. Examples of plating films formed by plating using the plating solution L1 include CoWB, CoB, CoWP, CoWBP, NiWB, NiB, NiWP, NiWBP, Cu, Pd, and Ru. The plating film may be formed as a single layer or two or more layers. When the plating film has a two-layer structure, it may have a layer structure such as CoWB / CoB or Pd / CoB in order from the undercoat metal layer (seed layer) side.

[0028] The plating processing unit 5 further includes a cleaning liquid supply unit 54 that supplies a cleaning liquid L2 to the surface of the substrate W held by the holder 52, and a rinse liquid supply unit 55 that supplies a rinse liquid L3 to the surface of the substrate W.

[0029] The cleaning liquid supply unit 54 supplies the cleaning liquid L2 to the substrate W held and rotated by the holder 52, thereby performing a pre-cleaning process on the seed layer formed on the substrate W. The cleaning liquid supply unit 54 has a cleaning liquid nozzle 541 that discharges the cleaning liquid L2 onto the substrate W held by the holder 52, and a cleaning liquid supply source 542 that supplies the cleaning liquid L2 to the cleaning liquid nozzle 541. Of these, the cleaning liquid supply source 542 is configured to supply the cleaning liquid L2, which has been heated or temperature-controlled to a predetermined temperature as described below, to the cleaning liquid nozzle 541 via a cleaning liquid pipe 543. The cleaning liquid nozzle 541 is held by a nozzle arm 56 and is movable together with the plating liquid nozzle 531.

[0030] The cleaning solution L2 may be a dicarboxylic acid or a tricarboxylic acid. Examples of the dicarboxylic acid include organic acids such as malic acid, succinic acid, malonic acid, oxalic acid, glutaric acid, adipic acid, and tartaric acid. Examples of the tricarboxylic acid include organic acids such as citric acid.

[0031] The rinse liquid supply unit 55 has a rinse liquid nozzle 551 that discharges rinse liquid L3 onto the substrate W held by the holder 52, and a rinse liquid supply source 552 that supplies rinse liquid L3 to the rinse liquid nozzle 551. Of these, the rinse liquid nozzle 551 is held by a nozzle arm 56 and is movable together with the plating liquid nozzle 531 and the cleaning liquid nozzle 541. The rinse liquid supply source 552 is configured to supply rinse liquid L3 to the rinse liquid nozzle 551 via a rinse liquid pipe 553. For example, DIW or the like can be used as the rinse liquid L3.

[0032] A nozzle movement mechanism (not shown) is connected to the nozzle arm 56 that holds the plating solution nozzle 531, cleaning solution nozzle 541, and rinse solution nozzle 551. The nozzle movement mechanism moves the nozzle arm 56 horizontally and vertically. More specifically, the nozzle movement mechanism enables the nozzle arm 56 to move between a discharge position where the processing liquid (plating solution L1, cleaning solution L2, or rinse solution L3) is discharged onto the substrate W and a retracted position where the nozzle arm 56 is retracted from the discharge position. The discharge position is not particularly limited as long as the processing liquid can be supplied to any position on the surface of the substrate W. For example, it is preferable that the discharge position be a position where the processing liquid can be supplied to the center of the substrate W. The discharge position of the nozzle arm 56 may be different when supplying the plating solution L1, cleaning solution L2, or rinse solution L3 to the substrate W. The retracted position is a position within the chamber 51 that does not overlap the substrate W when viewed from above and is spaced apart from the discharge position. When the nozzle arm 56 is positioned at the retracted position, interference between the moving lid body 6 and the nozzle arm 56 is avoided.

[0033] A cup 571 is provided around the holder 52. This cup 571 is formed in a ring shape when viewed from above, and receives the processing liquid splashed from the substrate W when the substrate W rotates, and guides it to the drain duct 581. An atmosphere blocking cover 572 is provided on the outer periphery of the cup 571, and prevents the atmosphere around the substrate W from diffusing into the chamber 51. This atmosphere blocking cover 572 is formed in a cylindrical shape that extends in the vertical direction, and is open at the top. A lid 6, which will be described later, can be inserted into the atmosphere blocking cover 572 from above.

[0034] The substrate W held by the holder 52 is covered by a lid 6. The lid 6 has a ceiling 61 facing the upper surface of the substrate W, and a sidewall 62 extending downward from the ceiling 61.

[0035] The ceiling portion 61 includes a first ceiling plate 611 and a second ceiling plate 612 disposed on the first ceiling plate 611. A heating portion 63 is disposed between the first ceiling plate 611 and the second ceiling plate 612. The first ceiling plate 611 and the second ceiling plate 612 seal the heating portion 63 and prevent the heating portion 63 from coming into contact with a processing liquid such as the plating liquid L1. More specifically, a seal ring 613 is disposed on the outer periphery of the heating portion 63, and the heating portion 63 is sealed by the seal ring 613. The first ceiling plate 611 and the second ceiling plate 612 are preferably corrosion-resistant to processing liquids such as the plating liquid L1, and may be formed of, for example, an aluminum alloy. To further enhance corrosion resistance, the first ceiling plate 611, the second ceiling plate 612, and the side wall portion 62 may be coated with Teflon (registered trademark).

[0036] A lid moving mechanism 7 is connected to the lid 6 via a lid arm 71. The lid moving mechanism 7 moves the lid 6 horizontally and up and down. More specifically, the lid moving mechanism 7 has a swing motor 72 that moves the lid 6 horizontally, and a cylinder 73 (distance adjustment unit) that moves the lid 6 up and down. Of these, the swing motor 72 is attached to a support plate 74 that is provided so as to be movable up and down relative to the cylinder 73. An actuator (not shown) including a motor and a ball screw may be used instead of the cylinder 73.

[0037] The swing motor 72 of the lid body moving mechanism 7 moves the lid body 6 between an upper position located above the substrate W held by the holder 52 and a retracted position retracted from the upper position. The upper position is a position facing the substrate W held by the holder 52 at a relatively large distance and overlapping the substrate W when viewed from above. The retracted position is a position within the chamber 51 that does not overlap the substrate W when viewed from above. When the lid body 6 is positioned at the retracted position, the moving nozzle arm 56 is prevented from interfering with the lid body 6. The rotation axis of the swing motor 72 extends vertically, and the lid body 6 is capable of swinging horizontally between the upper position and the retracted position.

[0038] The cylinder 73 of the lid moving mechanism 7 moves the lid 6 up and down to adjust the distance between the substrate W to which the plating solution L1 has been supplied and the first ceiling plate 611 of the ceiling section 61. More specifically, the cylinder 73 positions the lid 6 at a lower position (the position indicated by the solid line in FIG. 2) and an upper position (the position indicated by the two-dot chain line in FIG. 2).

[0039] In this embodiment, when the heating unit 63 is driven and the lid body 6 is positioned at the above-mentioned lower position, the plating solution L1 on the holder 52 or the substrate W is heated.

[0040] The ceiling 61 and side wall 62 of the lid 6 are covered by a lid cover 64. This lid cover 64 is placed on a second ceiling plate 612 of the lid 6 via supports 65. That is, a plurality of supports 65 protruding upward from the upper surface of the second ceiling plate 612 are provided on the second ceiling plate 612, and the lid cover 64 is placed on these supports 65. The lid cover 64 is movable horizontally and vertically together with the lid 6. Furthermore, in order to prevent heat from escaping from within the lid 6 to the surroundings, the lid cover 64 preferably has higher thermal insulation properties than the ceiling 61 and side wall 62. For example, the lid cover 64 is preferably formed from a resin material, and it is even more preferable that the resin material be heat-resistant.

[0041] In this embodiment, the lid body 6 equipped with the heating section 63 and the lid body cover 64 are integrally formed, and the cover unit 10 that covers the holding section 52 or the substrate W when placed in the lower position is composed of the lid body 6 and the lid body cover 64.

[0042] A fan filter unit 59 (gas supply unit) is provided at the top of the chamber 51 to supply clean air (gas) around the lid 6. The fan filter unit 59 supplies air into the chamber 51 (particularly, into the atmosphere blocking cover 572), and the supplied air flows toward the exhaust pipe 81. A downflow in which this air flows downward is formed around the lid 6, and gas vaporized from the processing liquid, such as the plating liquid L1, flows toward the exhaust pipe 81 by this downflow. In this way, gas vaporized from the processing liquid is prevented from rising and diffusing within the chamber 51.

[0043] The gas supplied from the fan filter unit 59 is exhausted by the exhaust mechanism 8.

[0044] <Substrate temperature during plating process> Fig. 3 is a graph showing a schematic diagram of the temperature change of a substrate during plating processing in a conventional substrate processing apparatus, in which the solid line indicates the temperature change at the center of the substrate and the dashed line indicates the temperature change at the outer periphery of the substrate.

[0045] In the substrate processing apparatus, for example, plating solution L1 is supplied to the substrate between times t1 and t2 (period P1), and then the plating solution L1 is maintained piled on the substrate between times t2 and t3 (period P2).

[0046] During period P1, the plating solution is supplied to the center of the substrate and spread to the outer periphery of the substrate by the rotation of the holder. Therefore, during period P1, the temperature of the center of the substrate rises before the temperature of the outer periphery, and then the temperature of the outer periphery rises.

[0047] During period P2, in order to maintain the temperature of the plating solution on the substrate constant, the heating unit provided in the lid heats the plating solution on the substrate to a constant temperature.

[0048] The holder, rotating shaft, etc. are located below the center of the substrate. Therefore, heat dissipation from the holder, rotating shaft, etc. is more likely to occur in the center of the substrate than in the peripheral area. Due to this heat dissipation, the temperature of the center of the substrate becomes lower than the temperature of the peripheral area of the substrate at the end of period P1 (time t2). In other words, the temperature of the center of the substrate becomes lower than the temperature of the peripheral area.

[0049] On the other hand, when the period P2 begins, the center of the substrate begins to be affected by the heat stored in the holder and the rotating shaft. That is, during period P2, heat is applied to the center of the substrate from the holder and the rotating shaft in addition to heat from the heating unit provided on the lid. Therefore, while the temperature of the outer periphery of the substrate remains almost constant during period P2, the temperature of the center of the substrate rises during period P2. As a result, the temperature of the center of the substrate becomes higher than the temperature of the outer periphery of the substrate at the end of period P2 (time t3). That is, the temperature of the center of the substrate becomes higher than the temperature of the outer periphery.

[0050] As described above, in conventional substrate processing apparatuses, it has been difficult to maintain uniformity in the temperature of the substrate during plating due to the thermal influence of the holder, rotating shaft, etc. The thickness of the plating film depends on the temperature of the plating solution. Therefore, if the temperature uniformity of the substrate during plating is low, it becomes difficult to form a plating film of uniform thickness on the substrate.

[0051] Therefore, in the plating processing unit 5 according to the embodiment, the shape of the holding unit 52 is devised to minimize heat conduction from the substrate W to the holding unit 52. Furthermore, in the plating processing unit 5 according to the embodiment, the central portion of the substrate W is heated at a different heating temperature from the peripheral portion, thereby further improving the in-plane temperature uniformity of the substrate W. To this end, in the plating processing unit 5 according to the embodiment, the heating unit 63 provided on the lid 6 has a divided structure.

[0052] <Configuration of holding part> First, the configuration of the holding portion 52 will be described with reference to Fig. 4 and Fig. 5. Fig. 4 is a plan view of the holding portion 52 according to the embodiment. Fig. 5 is a diagram showing an example of a cross section taken along line XX in Fig. 4.

[0053] 4, the holder 52 according to this embodiment has a circular shape in a plan view. The diameter of the holder 52 is smaller than the diameter of the substrate W. For example, the diameter of the holder 52 is half the diameter of the substrate W or less.

[0054] The holding part 52 includes an opposing surface 110, a suction port 120, and a plurality of protrusions 130. The opposing surface 110 is disposed below the substrate W and faces the lower surface of the substrate W. The opposing surface 110 is circular in plan view, and the diameter of the opposing surface 110 is the same as the diameter of the holding part 52.

[0055] The suction port 120 is provided in the center of the opposing surface 110. The suction port 120 is connected to a suction device (not shown) such as a vacuum pump via a suction pipe (not shown).

[0056] The multiple protrusions 130 have an annular shape in a plan view, and are arranged concentrically around the suction port 120. As shown in Fig. 5, the multiple protrusions 130 protrude from the facing surface 110 toward the lower surface of the substrate W, i.e., upward. The multiple protrusions 130 come into contact with the lower surface of the substrate W at their upper end surfaces 131. Note that the protrusions 130 are formed with a communication recess 132 that connects the inside and outside in the radial direction in order to ensure a suction path.

[0057] The protrusion height of a typical vacuum chuck is, for example, 0.3 mm to 0.5 mm. In contrast, the protrusion height h (the vertical distance between the opposing surface 110 and the upper end surface 131) of the protrusion 130 according to this embodiment is 1 mm or more. In this way, by increasing the protrusion height h of the protrusion 130, the thermal influence of the holder 52 on the substrate W during the plating process can be suppressed.

[0058] This point will be explained with reference to the experimental results shown in Figures 6 and 7. Figure 6 is a graph showing the film thickness distribution of the plating film when plating was performed using a holding part with a protrusion height h of 0.3 mm. Figure 7 is a graph showing the film thickness distribution of the plating film when plating was performed using a holding part 52 with a protrusion height h of 1 mm. The plating conditions in both experiments were the same except for the protrusion height h.

[0059] As shown in Figures 6 and 7, the thickness difference T2 (the difference between the maximum and minimum film thicknesses) of the plating film when the protrusion height h is 1 mm is smaller than the thickness difference T1 of the plating film when the protrusion height h is 0.3 mm. As mentioned above, the thickness of the plating film depends on the temperature of the plating solution L1. Therefore, the experimental results in Figures 6 and 7 indicate that changing the protrusion height h from 0.3 mm to 1 mm improved the in-plane temperature uniformity of the substrate W during plating processing.

[0060] 5, when the substrate W is held by the holder 52, a space 150 is formed between the substrate W and the holder 52, specifically, a space 150 is formed between the substrate W and the holder 52, that is, a space 150 is surrounded by two adjacent protrusions 130 and the facing surface 110 of the holder 52, and the substrate W. This space 150 functions as a heat insulating space that suppresses heat conduction from the substrate W to the holder 52.

[0061] The heat insulating performance of the space 150 increases as the volume of the space 150 increases. Therefore, by increasing the protrusion height h, the volume of the space 150 increases, improving the heat insulating performance of the space 150. As a result, it is believed that heat conduction from the substrate W to the holder 52 is suppressed and the in-plane temperature uniformity of the substrate W during the plating process is improved. Furthermore, by increasing the protrusion height h, the opposing surface 110 of the holder 52 is separated from the substrate W. This is also believed to suppress heat conduction from the substrate W to the holder 52.

[0062] The protrusion height h is preferably 1 mm or more, but may be at least 0.6 mm or more.

[0063] Heat from the substrate W is transferred to the holder 52 and the rotating shaft 522 via the protrusion 130 in contact with the substrate W. For this reason, it is preferable that the contact area of the protrusion 130 with the substrate W is as small as possible.

[0064] From this perspective, the retaining portion 52 of the embodiment is formed so that the first width d1, which is the radial width of the upper end surface 131 of the protrusion 130, is smaller than the second width d2, which is the radial width between adjacent protrusions 130.

[0065] Specifically, in the retaining portion 52 according to the embodiment, the ratio of the first width d1 to the second width d2 (the value of the first width d1 when the second width d2 is 1) is, for example, 0.1 or less.

[0066] With this configuration, the holder 52 according to this embodiment can suitably suppress heat conduction from the substrate W to the holder 52.

[0067] <Heating section configuration> Next, the configuration of the heating unit 63 provided in the lid 6 will be described with reference to Figs. 8 to 10. Fig. 8 is a plan view of the heating unit 63 according to the embodiment, and Fig. 9 is a cross-sectional view of the heating unit 63 according to the embodiment. Figs. 8 and 9 show the heating unit 63 seen through the lid 6. Fig. 10 is an enlarged view showing an example of part H shown in Fig. 9.

[0068] 8 and 9, the heating unit 63 according to this embodiment includes a plurality of individual heating units 210, 220, and 230 whose temperatures can be controlled individually. Of the individual heating units 210, 220, and 230, the heating region of the individual heating unit 210 is circular in plan view and is located directly above the holding unit 52. The heating regions of the individual heating units 220 and 230 are annular in plan view and are arranged concentrically with the individual heating unit 210. Specifically, the individual heating units 210, 220, and 230 are arranged concentrically with a gap between them, with the individual heating unit 210 at the center, in the order of the individual heating unit 220 and the individual heating unit 230.

[0069] 9, the holding portion 52 is arranged concentrically with the plurality of individual heating portions 210, 220, and 230. The diameter E of the holding portion 52 is the same as the diameter A of the individual heating portion 210 located directly above the holding portion 52.

[0070] It should be noted that the holding portion 52 does not necessarily have to have the same diameter as the individual heating portion 210. That is, as shown in Fig. 10, if the distance between the individual heating portion 210 and the individual heating portion 220 adjacent to the individual heating portion 210 is B, the diameter E of the holding portion 52 may be not less than A-(B / 2) and not more than A+(B / 2).

[0071] As described above, the plating processing unit 5 according to the embodiment includes a heating unit 63 divided into a plurality of individual heating units 210, 220, and 230 each capable of individually controlling the temperature. The plating processing unit 5 heats the substrate W at an appropriate temperature for each region using the plurality of individual heating units 210, 220, and 230, thereby further improving the in-plane temperature uniformity of the substrate W during plating processing.

[0072] In particular, the heating unit 63 according to the embodiment has an individual heating unit 210 directly above the holding unit 52, the individual heating unit 210 having a diameter similar to that of the holding unit 52. Therefore, the individual heating unit 210 can appropriately control the temperature of the central portion of the substrate W, which is susceptible to the thermal influence of the holding unit 52.

[0073] Fig. 11 is a graph showing the change in thickness distribution of the plating film when the set temperature of the individual heating unit 210 located immediately above the holding unit 52 is changed. In Fig. 11, the dashed lines indicate the thickness distribution when the set temperatures of the individual heating units 210, 220, and 230 are 77°C, 64°C, and 85°C, respectively, and the solid lines indicate the thickness distribution when the set temperatures are 87°C, 64°C, and 85°C.

[0074] The plating conditions in both experiments were the same except for the set temperature of the individual heating unit 210, and the protrusion height h of the protrusion 130 was 1 mm in both experiments. The experimental results shown by the dashed line in Fig. 11 are the same as the experimental results shown in Fig. 7.

[0075] 11, by changing the set temperature of the individual heating unit 210 from 77° C. to 87° C., the thickness of the plating film decreased from T2 to T3. In this way, by appropriately setting the temperature of the individual heating unit 210, the in-plane temperature uniformity of the substrate W during plating processing is further improved, and as a result, the difference in thickness of the plating film can be further reduced.

[0076] <Specific operation of plating processing section> Next, a specific operation of the plating processing unit 5 will be described with reference to Fig. 12. Fig. 12 is a flowchart showing the procedure of processing executed by the plating processing unit 5 according to the embodiment. Note that the series of processing shown in Fig. 12 is executed under the control of the control unit 91.

[0077] 12, first, the substrate W carried into the plating processing section 5 is held by the holding section 52 (step S101). Here, the central portion of the lower surface of the substrate W is vacuum-sucked, and the substrate W is held horizontally by the holding section 52.

[0078] Next, the substrate W held by the holder 52 is subjected to a cleaning process (step S102). In this case, first, the rotation motor 523 is driven to rotate the substrate W at a predetermined rotation speed. Next, the nozzle arm 56, which has been positioned in the retracted position (the position indicated by the solid line in FIG. 2), moves to a discharge position above the center of the substrate W. Next, the cleaning liquid L2 is supplied from the cleaning liquid nozzle 541 to the rotating substrate W, thereby cleaning the surface of the substrate W. As a result, any deposits or the like adhering to the substrate W are removed from the substrate W. The cleaning liquid L2 supplied to the substrate W is discharged to the drain duct 581.

[0079] Next, the cleaned substrate W is rinsed (step S103). In this case, the rinse liquid L3 is supplied from the rinse liquid nozzle 551 to the rotating substrate W, and the surface of the substrate W is rinsed. This washes away the cleaning liquid L2 remaining on the substrate W. The rinse liquid L3 supplied to the substrate W is discharged to the drain duct 581.

[0080] Next, plating solution L1 is supplied and piled on the rinsed substrate W (step S104). In this case, the rotation speed of the substrate W is first reduced to be lower than the rotation speed during the rinsing process. For example, the rotation speed of the substrate W may be set to 50 to 150 rpm. This allows the plating film formed on the substrate W to be uniform. Alternatively, the rotation of the substrate W may be stopped.

[0081] Next, the plating solution L1 is discharged from the plating solution nozzle 531 onto the surface of the substrate W. The discharged plating solution L1 remains on the surface of the substrate W due to surface tension, and the plating solution L1 is piled up on the surface of the substrate W, forming a layer of the plating solution L1 (a so-called puddle). A portion of the plating solution L1 flows out from the surface of the substrate W and is discharged from the drain duct 581. After a predetermined amount of plating solution L1 has been discharged from the plating solution nozzle 531, the discharge of the plating solution L1 is stopped. Thereafter, the nozzle arm 56, which was positioned at the discharge position, is positioned at the retracted position.

[0082] Next, the plating solution L1 piled on the substrate W is heated. First, the substrate W is covered with the lid 6 (step S105). In this case, the rotation motor 72 of the lid moving mechanism 7 is driven to rotate the lid 6 in the horizontal direction and position it at the upper position (the position indicated by the two-dot chain line in FIG. 2).

[0083] Next, the cylinder 73 of the lid moving mechanism 7 is driven, and the lid 6, which was positioned at the upper position, is lowered to the processing position. As a result, the distance between the plating solution L1 on the substrate W and the first ceiling plate 611 of the lid 6 becomes the first distance, and the side wall 62 of the lid 6 is positioned on the outer periphery of the substrate W. In this embodiment, the lower end of the side wall 62 of the lid 6 is positioned at a position lower than the underside of the substrate W. In this way, the substrate W is covered by the lid 6, and the space around the substrate W is sealed.

[0084] Next, a heating process is performed (step S106). Specifically, the heating unit 63 is turned on to heat the plating solution L1 piled on the substrate W. The set temperature of the heating unit 63 is fixed to a constant target temperature throughout the heating process for each of the individual heating units 210, 220, and 230. When the temperature of the plating solution L1 rises to a temperature at which the components precipitate, the components of the plating solution L1 precipitate on the surface of the seed layer, forming a plating film.

[0085] Next, a lid retraction process is performed (step S107). In the lid retraction process, the lid movement mechanism 7 is driven to position the lid 6 at the retracted position. In this case, first, the cylinder 73 of the lid movement mechanism 7 is driven to raise the lid 6 to the upper position. Thereafter, the swing motor 72 of the lid movement mechanism 7 is driven to swing the lid 6, which was positioned at the upper position, in the horizontal direction to position it at the retracted position.

[0086] Next, the substrate W is rinsed (step S108). In this case, first, the rotation speed of the substrate W is increased to be higher than the rotation speed during the plating process. For example, the substrate W is rotated at the same rotation speed as that used in the rinsing process before the plating process (step S103). Next, the rinse liquid nozzle 551, which has been positioned at the retracted position, moves to the discharge position. Next, rinse liquid L3 is supplied from the rinse liquid nozzle 551 to the rotating substrate W, thereby cleaning the surface of the substrate W. This washes away the plating liquid L1 remaining on the substrate W.

[0087] Next, the rinsed substrate W is subjected to a drying process (step S109). In this case, for example, the rotation speed of the substrate W is increased to be higher than the rotation speed in the rinse process (step S108), and the substrate W is rotated at a high speed. As a result, the rinse liquid L3 remaining on the substrate W is shaken off, and the substrate W is dried.

[0088] When the drying process is completed, the substrate W is removed from the plating processing section 5 by the substrate transport device 17 and transported to the delivery section 14. The substrate W transported to the delivery section 14 is then removed from the delivery section 14 by the substrate transport device 13 and stored in the carrier C. This completes the series of electroless plating processes for one substrate W.

[0089] (First Modification) 13 is a plan view showing a part of the holding portion according to the first modified example. In the above-described embodiment, the holding portion 52 is provided with the protruding portion 130 having a circular ring shape in a plan view, but the shape of the protruding portion does not necessarily have to be a circular ring shape in a plan view.

[0090] For example, as shown in Fig. 13, the holding portion 52A may have a cylindrical (pin-shaped) protrusion 130A. This protrusion 130A also has a protrusion height of at least 0.6 mm or more, preferably 1 mm or more.

[0091] (Second Modification) Fig. 14 is a diagram showing the configuration of a plating processing unit according to Modification 2. As shown in Fig. 14, a plating processing unit 5B according to Modification 2 has a configuration in which a cover 6B and a plating solution nozzle 531B of a plating solution supply unit 53B are integrated.

[0092] Specifically, the plating solution nozzle 531B is provided so as to penetrate the ceiling portion 61 of the lid body 6B, the heating portion 63, and the lid body cover 64. The plating solution nozzle 531B is moved together with the lid body 6B by the lid body moving mechanism .

[0093] Here, an example is shown in which the plating solution nozzle 531B is positioned above the center of the substrate W held by the holding part 52, but the plating solution nozzle 531B may also be positioned at a position shifted from above the center of the substrate W.

[0094] Next, a specific operation of the plating processing section 5B according to the second modified example will be described with reference to Fig. 15. Fig. 15 is a flowchart showing the procedure of the processing executed by the plating processing section 5B according to the second modified example.

[0095] 15, the processes other than steps S204 and S205 are the same as the processes other than steps S104 and S105 of steps S101 to S109 executed by the plating processing unit 5 according to the embodiment. Specifically, the processes of steps S201 to S203 are the same as the processes of steps S101 to S103, and the processes of steps S206 to S209 are the same as the processes of steps S106 to S109.

[0096] As shown in FIG. 15, in the plating processing section 5B according to the second modification, the substrate W is covered with the lid 6B (step S204), and then the plating liquid L1 is piled up (step S205).

[0097] In this way, by supplying the plating solution L1 to the substrate W after covering the substrate W with the lid 6B, it is possible to suppress a decrease in the temperature of the plating solution L1 on the substrate W, compared to when the substrate W is covered with the lid 6B after the plating solution L1 is supplied. In other words, it is possible to suppress a decrease in the temperature of the plating solution L1 that occurs during the period from when the plating solution L1 is supplied to the substrate W until the lid 6B is moved to cover the substrate W.

[0098] After covering the substrate W with the lid 6B in step S204, the plating processing section 5B may preheat the substrate W by turning on the heating section 63 before supplying the plating solution L1.

[0099] Furthermore, when the plating processing unit 5B covers the substrate W with the lid 6B in step S204, the lid 6B may be positioned so that the first ceiling plate 611 of the lid 6B comes into contact with the plating solution L1 poured onto the substrate W in step S205. This allows the heat of the heating unit 63 to be efficiently transferred to the plating solution L1 in the subsequent heating process (step S206), thereby improving the heating efficiency of the plating solution L1.

[0100] When the lid 6B is brought into contact with the plating solution L1, the plating processing unit 5B may perform a rinsing process (step S208) and a drying process (step S209) while the substrate W is covered with the lid 6B. This allows the plating solution L1 adhering to the first ceiling plate 611 of the lid 6B to be washed away with the rinse solution L3, and also allows the first ceiling plate 611 to be dried. In this case, the plating solution nozzle 531B may be connected to a rinse solution supply source 552 via a rinse solution piping 553. A drying gas supply source may also be connected to the plating solution nozzle 531B via a piping. This allows the plating processing unit 5B to supply a drying gas (e.g., an inert gas such as nitrogen) from the drying gas supply source into the inside of the lid 6B in the drying process (step S209) to dry the substrate W and the lid 6B.

[0101] As described above, the substrate processing apparatus (for example, plating processing unit 5) according to the embodiment includes a holder (for example, holders 52 and 52A), a supply unit (for example, plating solution supply unit 53), and a lid (for example, lid 6). The holder suction-holds a substrate (for example, substrate W). The supply unit supplies a heated plating solution (for example, plating solution L1) to the substrate suction-held by the holder. The lid covers the substrate suction-held by the holder and heats the plating solution on the substrate using a heating unit (for example, heating unit 63) provided on a ceiling (for example, ceiling 61) facing the upper surface of the substrate. The holder also includes a plurality of protrusions (for example, a plurality of protrusions 130) that protrude from an opposing surface (for example, opposing surface 110) facing the lower surface of the substrate toward the lower surface of the substrate, with a protrusion height of 1 mm or more. Therefore, the substrate processing apparatus according to the embodiment can improve the in-plane temperature uniformity of the substrate during plating processing.

[0102] The multiple protrusions may be annular in plan view and arranged concentrically. In this case, a first width (e.g., first width d1) that is the radial width of the protrusions may be smaller than a second width (e.g., second width d2) that is the radial width between adjacent protrusions. This can effectively suppress heat conduction from the substrate to the holder.

[0103] The ratio of the first width to the second width may be equal to or less than 0.1, which makes it possible to more effectively suppress the heat conduction from the substrate to the holder.

[0104] The heating section may have a plurality of individual heating sections (for example, individual heating sections 210, 220, and 230) arranged concentrically and capable of individually controlling the temperature. This allows the substrate to be heated to an appropriate temperature for each region using the plurality of individual heating sections, thereby further improving the temperature uniformity of the substrate during plating processing.

[0105] The holding unit may have a smaller diameter than the substrate and be arranged concentrically with the multiple individual heating units. In this case, the diameter of the holding unit may be A-(B / 2) or more and A+(B / 2) or less, where A is the diameter of a first heating unit (for example, individual heating unit 210) located directly above the holding unit among the multiple individual heating units, and B is the distance between the first heating unit and a second heating unit (for example, individual heating unit 220) adjacent to the first heating unit among the multiple individual heating units.

[0106] The diameter of the holding part may be the same as the diameter of the first heating part, thereby making it possible to appropriately control the temperature of the central part of the substrate, which is susceptible to the thermal influence of the holding part, by using the first heating part having the same diameter as the holding part.

[0107] The material of the retaining portion may be carbon PEEK resin. By using carbon PEEK resin, which has a relatively high strength, it is easy to maintain the strength even when the width (first width) of the protrusion is formed narrow. Furthermore, carbon PEEK resin is resistant to thermal deformation, and is therefore suitable for plating processes using heated plating solutions.

[0108] The processing liquid supplied to the substrate may be a processing liquid other than a plating liquid. In this case, the substrate processing apparatus does not necessarily need to include a lid. That is, the substrate processing apparatus may be configured to include a holder that suction-holds the substrate and a supply unit that supplies the processing liquid to the substrate suction-held by the holder. In this case, the substrate processing method may include the steps of suction-holding the substrate using a holder that has a plurality of protrusions that protrude from an opposing surface disposed below the substrate toward the underside of the substrate and have a protrusion height of 1 mm or more, and supplying the processing liquid to the suction-held substrate. In addition, the processing liquid other than a plating liquid may be a heated processing liquid.

[0109] In this case, the substrate processing apparatus and method can improve the in-plane temperature uniformity of the substrate during liquid processing. That is, by increasing the protruding height of the protrusions, the heat insulating performance of space 150 (see FIG. 5) is improved and heat conduction from the substrate to the holder is suppressed, thereby improving the in-plane temperature uniformity of the substrate during liquid processing.

[0110] The processing liquid other than the plating liquid is not particularly limited. For example, the processing liquid may be HF (hydrofluoric acid), SC1 (ammonia, hydrogen peroxide, and water mixture), SC2 (hydrochloric acid, hydrogen peroxide, and water mixture), SPM (sulfuric acid, hydrogen peroxide, and water mixture), ammonia water, DIW (deionized water), IPA (isopropyl alcohol), etc. Furthermore, the processing liquid may be a resist liquid for forming a coating film on the surface of a substrate, a liquid for forming an anti-reflective film, a liquid for forming an SOG (spin-on-glass) film, a liquid for forming an underlayer film, etc.

[0111] The disclosed embodiments should be considered in all respects as illustrative and not restrictive. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0112] 1: Substrate processing equipment 5: Plating department 6: Lid 51: Chamber 52: Holding part 53: Plating solution supply section 61: Ceiling 62: Side wall 63: Heating part 64: Lid cover 110: Opposite surface 120: Suction port 130:Protrusion 131: Upper end surface 132: Connecting recess 210, 220, 230: Individual heating section L1: Plating solution W: Substrate

Claims

1. a holder having a diameter equal to or less than half the diameter of the substrate, which holds the substrate by suction and rotates; a supply unit that supplies a processing liquid to the substrate held by suction on the holder; Equipped with The holding portion is a plurality of protruding portions protruding from an opposing surface facing the lower surface of the substrate toward the lower surface of the substrate, the protruding height being 1 mm or more; The plurality of protrusions are annular in plan view and are arranged concentrically, a first width, which is a width of the protrusion in a radial direction, being smaller than a second width, which is a width between adjacent protrusions in the radial direction; a ratio of the first width to the second width is equal to or less than 0.1; The material of the holding portion is carbon PEEK resin, The protrusion has a communication recess that communicates the radially inner side with the radially outer side.

2. The holding portion is an opposing surface facing the substrate; a suction port provided at the center of the opposing surface and connected to a suction device; Equipped with The substrate processing apparatus according to claim 1 , wherein the plurality of protrusions are arranged concentrically around the suction port.

3. a step of suction-holding the substrate using a holder having a diameter equal to or less than half the diameter of the substrate, the holder having a plurality of protrusions each having a protrusion height of 1 mm or more that protrude from an opposing surface disposed below the substrate toward the lower surface of the substrate; supplying a processing liquid to the substrate held by suction; rotating the substrate to which the processing liquid has been supplied; Including, The plurality of protrusions are annular in plan view and are arranged concentrically, a first width, which is a width of the protrusion in a radial direction, being smaller than a second width, which is a width between adjacent protrusions in the radial direction; a ratio of the first width to the second width is equal to or less than 0.1; The material of the holding portion is carbon PEEK resin, The protrusion has a communicating recess that communicates the radially inner side with the radially outer side.

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