Electro-optical devices and electronic equipment

Abstract

To provide an electro-optical device that can increase the ability to protect a temperature detection element from surge current, and an electronic apparatus.SOLUTION: In an electro-optical device, a first substrate 10 is provided with a temperature detection element 11, and an electrostatic protection circuit 12 that protects the temperature detection element 11 from surge current. The temperature detection element 11 is electrically connected in series with a first resistance element R1, and the electrostatic protection circuit 12 has a transistor Tr electrically connected in parallel with the first resistance element R1 and temperature detection element 11. The electro-optical device includes a first capacitive element C1 that is provided on a wiring board 70 electrically connected with the first substrate 10, and is between first connection wiring 76 electrically connected with one side of the temperature detection element 11 and second connection wiring 77 electrically connected with the other side.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The present invention relates to an electro-optical device provided with a temperature detection element, and an electronic device. [Background technology]

[0002] In electro-optical devices such as liquid crystal devices, a technology has been proposed in which a temperature detection element is provided outside the display area and drive conditions are corrected based on the detection results of the temperature detection element. Also proposed is a configuration in which an electrostatic protection circuit including a transistor electrically connected in parallel to the temperature detection element is provided to protect the temperature detection element from surge current (see Patent Documents 1 and 2). Patent Documents 1 and 2 also describe a configuration in which a resistor is provided in the anode wiring extending from the anode terminal to the transistor and a resistor is provided in the cathode wiring extending from the cathode terminal to the transistor to mitigate surge current. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2016-184719 [Patent Document 2] Patent Publication No. 2021-18367 Summary of the Invention [Problem to be solved by the invention]

[0004] In order to accurately detect temperature using a temperature detection element driven by a constant current, it is necessary to reduce the leakage current of the transistor in the electrostatic protection circuit when the temperature of the electro-optical device rises. However, if a transistor with an LDD (Lightly Doped Drain) structure, for example, is used as the transistor in the electrostatic protection circuit that can suppress leakage current, there is a problem that the discharge capability when a surge current enters is low, and therefore the ability to protect the temperature detection element is insufficient. [Means for solving the problem]

[0005] In order to solve the above problems, one aspect of the electro-optical device according to the present invention is to The device includes a first substrate and a second substrate bonded to the first substrate, the first substrate having a first terminal and a second terminal, a temperature detection element; a first resistance element electrically connected in series with the temperature detection element; and a transistor electrically connected in parallel with the first resistance element and the temperature detection element. a third resistor element provided in correspondence with the first terminal, and a fourth resistor element provided in correspondence with the second terminal; ESD protection circuit the first resistive element and the temperature detecting element are provided in a region of the first substrate that overlaps with the second substrate, and the third resistive element and the fourth resistive element are provided in a region of the first substrate that does not overlap with the second substrate. It is characterized by:

[0006] The electro-optical device according to the present invention is used in electronic equipment. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a plan view showing an example of the configuration of an electro-optical device according to a first embodiment of the present invention. [Figure 2] FIG. 2 is an explanatory diagram schematically showing a cross section of the electro-optical device shown in FIG. [Figure 3] FIG. 3 is a circuit block diagram showing the electrical configuration of the first substrate shown in FIG. 2. [Figure 4] FIG. 4 is an explanatory diagram of a temperature detection circuit and the like shown in FIG. 3. [Figure 5] FIG. 5 is an explanatory diagram showing a planar configuration in the vicinity of the temperature detection circuit shown in FIG. 4. [Figure 6] FIG. 4 is an explanatory diagram of an electro-optical device according to a second embodiment of the present invention. [Figure 7] 1 is a block diagram showing an example of the configuration of a projection display device to which the present invention is applied. [Figure 8] FIG. 8 is an explanatory diagram of the light path shift element shown in FIG. 7. DETAILED DESCRIPTION OF THE INVENTION

[0008] The present invention will be described with reference to the drawings. In the drawings referred to in the following description, the scale of each layer and each component is different so that each layer and each component can be recognized on the drawing.

[0009] 1. Embodiment 1 1-1. Specific configuration of the electro-optical device 100 FIG. 1 is a plan view illustrating an exemplary configuration of an electro-optical device 100 according to a first embodiment of the present invention. FIG. 2 is an explanatory diagram schematically illustrating a cross section of the electro-optical device 100 illustrated in FIG. 1. The electro-optical device 100 illustrated in FIGS. 1 and 2 is a liquid crystal device, and includes an electro-optical panel 100p formed of a liquid crystal panel. In the electro-optical device 100, a first substrate 10 and a second substrate 20 are bonded together with a predetermined gap therebetween by a sealant 107. The sealant 107 is provided in a frame shape along the outer edge of the second substrate 20. The sealant 107 is an adhesive made of a photocurable resin, a thermosetting resin, or the like, and contains a gap material 107a, such as glass fiber or glass beads, for maintaining a predetermined distance between the two substrates. In the electro-optical device 100, an electro-optical layer 50 formed of a liquid crystal layer is provided between the first substrate 10 and the second substrate 20 within a region surrounded by the sealant 107. The sealant 107 has a discontinuous portion 107c formed therein to serve as a liquid crystal injection port, and this discontinuous portion 107c is sealed with a sealing material 108 after the liquid crystal material is injected. Note that if the liquid crystal material is injected using a dropping method, the discontinuous portion 107c is not formed. The first substrate 10 and the second substrate 20 are both rectangular, and a display area 10a is provided as a rectangular area approximately in the center of the electro-optical device 100. Corresponding to this shape, the sealant 107 is also provided in a substantially rectangular shape, and a rectangular frame-shaped peripheral area 10c is formed outside the display area 10a.

[0010] In the display region 10a, two sides extending in the X direction are defined as a first side 10a1 and a second side 10a2, and two sides extending in the Y direction are defined as a third side 10a3 and a fourth side 10a4. In the peripheral region 10c of the first substrate 10, a data line driving circuit 101 is provided between an end of the first substrate 10 and the first side 10a1 of the display region 10a, and an inspection circuit 105 is provided between the end of the first substrate 10 and the second side 10a2 of the display region 10a. Furthermore, a scanning line driving circuit 104 is provided between the end of the first substrate 10 and the third side 10a3 of the display region 10a and between the end of the first substrate 10 and the fourth side 10a4 of the display region 10a. Mounting terminals 102 to which a wiring substrate 70 is electrically connected are arranged on the end of the first substrate 10 on the data line driving circuit 101 side. The wiring board 70 is electrically connected to the upper circuit 60 via a connector 61 .

[0011] The first substrate 10 has a light-transmitting substrate body 10w such as a quartz substrate or a glass substrate, and on one surface 10s of the first substrate 10 facing the second substrate 20, a plurality of pixel transistors and pixel electrodes 9a electrically connected to each of the plurality of pixel transistors are formed in a matrix in a display region 10a. A first alignment film 16 is formed on the upper layer side of the pixel electrodes 9a. On the one surface 10s side of the first substrate 10, a rectangular frame-shaped region 10b extending along the space between the display region 10a and the sealing material 107 has dummy pixel electrodes 9b formed simultaneously with the pixel electrodes 9a in portions extending along each side of the display region 10a.

[0012] The second substrate 20 has a light-transmitting substrate body 20w, such as a quartz substrate or a glass substrate, and a common electrode 21 is formed on one surface 20s of the second substrate 20. The common electrode 21 is formed over substantially the entire surface 20s of the second substrate 20. On the one surface 20s of the second substrate 20, a light-shielding parting line 29 is formed below the common electrode 21 in the frame-shaped region 10b, and a second alignment film 26 is laminated on the surface of the common electrode 21. The display region 10a is defined by the inner edge of the parting line 29. A light-transmitting planarizing film 22 is formed between the parting line 29 and the common electrode 21. The light-shielding layer constituting the parting line 29 may be formed as a black matrix portion overlapping the inter-pixel region 10f sandwiched between adjacent pixel electrodes 9a. The parting line 29 is formed at a position overlapping the dummy pixel electrodes 9b in plan view. The parting line 29 is made of a light-shielding metal film or black resin.

[0013] The first alignment film 16 and the second alignment film 26 are made of, for example, SiO X The electro-optical device 100 is an inorganic alignment film made of an obliquely evaporated film of TiO2, MgO, Al2O3, etc. (x≦2), and is made of a columnar structure layer in which pillar-shaped bodies called columns are formed obliquely with respect to the first substrate 10 and the second substrate 20. Therefore, the first alignment film 16 and the second alignment film 26 align the nematic liquid crystal molecules with negative dielectric anisotropy used in the electro-optical layer 50 at an oblique angle with respect to the first substrate 10 and the second substrate 20, imparting a pretilt to the liquid crystal molecules. In this way, the electro-optical device 100 is configured as a normally black VA (Vertical Alignment) mode liquid crystal device.

[0014] On the first substrate 10, outside the sealing material 107, electrode portions 14t for inter-substrate conduction are formed at positions overlapping four corner portions 24t of the second substrate 20. The electrode portions 14t for inter-substrate conduction are electrically connected to wiring 6g, and the wiring 6g is electrically connected to a terminal 102g of the terminal 102 for supplying a common potential LCCOM. An inter-substrate conductive material 109 containing conductive particles is disposed between the electrode portions 14t for inter-substrate conduction and the corner portions 24t, and the common electrode 21 of the second substrate 20 is electrically connected to the first substrate 10 via the electrode portions 14t for inter-substrate conduction and the inter-substrate conductive material 109. Therefore, a common potential LCCOM is applied to the common electrode 21 from the first substrate 10 side.

[0015] The multiple terminals 102 include terminal 102g as well as a first terminal 102a and a second terminal 102c electrically connected to a first wiring La and a second wiring Lc of the temperature detection circuit 1, which will be described later with reference to FIG. 3.

[0016] The electro-optical device 100 of this embodiment is a transmissive liquid crystal device. Therefore, the pixel electrodes 9a and the common electrode 21 are formed of a translucent conductive film such as an ITO (Indium Tin Oxide) film or an IZO (Indium Zinc Oxide) film. In such a transmissive liquid crystal device, for example, light from a light source incident from the second substrate 20 side is modulated while being emitted from the first substrate 10, thereby displaying an image. Note that if the pixel electrodes 9a are made of a reflective metal such as aluminum, the electro-optical device 100 can be made into a reflective liquid crystal device.

[0017] 1-2. Electrical configuration of the electro-optical device 100 FIG. 3 is a circuit block diagram showing the electrical configuration of the first substrate 10 shown in FIG. 2. In FIG. 3, the first substrate 10 includes a display area 10a in which a plurality of pixels 100a are arranged in a matrix in a substantially central region. Inside the display area 10a of the first substrate 10, a plurality of scanning lines 3a extending in the X direction from the scanning line driving circuit 104 and a plurality of data lines 6a extending in the Y direction from the data line driving circuit 101 are provided. The pixels 100a are configured corresponding to intersections of the scanning lines 3a and the data lines 6a. The plurality of data lines 6a are electrically connected to an inspection circuit 105 on the side of the display area 10a opposite the data line driving circuit 101 side in the Y direction. That is, the plurality of data lines 6a are electrically connected to the inspection circuit 105 provided on the second side 10a2. Each of the plurality of pixels 100a includes a pixel transistor 30 formed of a field-effect transistor and a pixel electrode 9a electrically connected to the pixel transistor 30. In this embodiment, the pixel transistor 30 is an N-channel thin-film transistor having an LDD structure. The source of the pixel transistor 30 is electrically connected to a data line 6a, the gate of the pixel transistor 30 is electrically connected to a scanning line 3a, and the drain of the pixel transistor 30 is electrically connected to a pixel electrode 9a. The data line driving circuit 101 supplies an image signal VID to the data line 6a, and the scanning line driving circuit 104 supplies a scanning signal G to the scanning line 3a. The test circuit 105 is a transistor array, and one source and drain of each transistor is electrically connected to the data line 6a, the other source and drain are electrically connected to a test line (not shown), and the gate is electrically connected to a control signal line (not shown) within the test circuit 105. In FIG. 3, the odd-numbered scanning lines 3a are driven by the scanning line driving circuit 104 arranged on the left side of the display area 10a, and the even-numbered scanning lines 3a are driven by the scanning line driving circuit 104 arranged on the right side of the display area 10a, but the same scanning lines 3a may also be driven by scanning line driving circuits 104 arranged on both the left and right sides.

[0018] In each pixel 100a, the pixel electrode 9a faces the common electrode 21 of the second substrate 20 described with reference to FIG. 2 via the electro-optical layer 50, forming a liquid crystal capacitance 50a. To prevent fluctuations in the image signal VID held in the liquid crystal capacitance 50a, a storage capacitance 55 is added to each pixel 100a in parallel with the liquid crystal capacitance 50a. In this embodiment, to form the storage capacitance 55, a common potential wiring 8a extending across the plurality of pixels 100a is formed on the first substrate 10 as a capacitance line, and a common potential LCCOM is supplied to the common potential wiring 8a. The common potential wiring 8a is arranged to overlap at least one of the scanning line 3a and the data line 6a in a planar view. FIG. 3 illustrates an example in which the common potential wiring 8a overlaps both the scanning line 3a and the data line 6a in a planar view. The common potential wiring 8a may also be configured to overlap the data line 6a of the scanning line 3a and the data line 6a in a planar view. Although not shown, the common potential wiring 8a is electrically connected to a wiring 6g to which a common potential LCCOM is supplied.

[0019] When the electro-optical device 100 is mounted in an electronic device, the terminals 102 are electrically connected to a host circuit 60 via a wiring board 70. The host circuit 60 is provided with an image control circuit 65. The host circuit 60 also is provided with a temperature detection drive circuit 66 that drives a temperature detection circuit 1 described below. The host circuit 60 is provided in a host device for the electro-optical device 100 in an electronic device described below.

[0020] 1-3. Configuration of temperature detection circuit 1, etc. Fig. 4 is an explanatory diagram of the temperature detection circuit 1 etc. shown in Fig. 3. Fig. 5 is an explanatory diagram showing a planar configuration in the vicinity of the temperature detection circuit 1 shown in Fig. 4. Note that Fig. 4 emphasizes the features of the temperature detection circuit 1 when viewed as an equivalent circuit. Fig. 5 emphasizes the features of the planar arrangement of each element when viewed as an equivalent circuit of the temperature detection circuit 1.

[0021] As shown in FIGS. 3, 4, and 5, the first substrate 10 is provided with a temperature detection circuit 1 that detects the temperature of the electro-optical panel 100p outside the display region 10a. The temperature detection circuit 1 includes a temperature detection element 11 for temperature detection and an electrostatic protection circuit 12 that includes a transistor Tr electrically connected in parallel to the temperature detection element 11. The electrostatic protection circuit 12 protects the temperature detection element 11 from surge currents. On the first substrate 10, the temperature detection element 11 is disposed near the display region 10a and overlaps with the parting edge 29 of the second substrate 20 in a plan view. The electrostatic protection circuit 12 is provided between the temperature detection element 11 and the end of the first substrate 10 where the terminals 102 are arranged.

[0022] The transistor Tr is an N-channel thin film transistor having an LDD structure with a semiconductor layer containing polysilicon as an active layer, similar to the pixel transistor 30. The channel width of the transistor Tr is, for example, 800 μm, and the channel length of the transistor Tr is, for example, 5 μm.

[0023] The temperature detection element 11 includes, for example, a plurality of diodes D electrically connected in series. FIGS. 4 and 5 show an example in which five diodes D1 to D5 are electrically connected in series. With this temperature detection element 11, the sensitivity of the forward voltage to temperature can be set to approximately −10 mV / °C. A first wiring La extending from the first terminal 102a is electrically connected to the anode 11a of the temperature detection element 11. A second wiring Lc extending from the second terminal 102c is electrically connected to the cathode 11c of the temperature detection element 11. Therefore, in this embodiment, the first wiring La is an anode wiring, and the second wiring Lc is a cathode wiring. A ground potential GND is supplied to the second wiring Lc.

[0024] In the temperature detection circuit 1 of this embodiment, a first resistor R1 is electrically connected in series to the anode 11a of the temperature detection element 11. Therefore, the transistor Tr is electrically connected in parallel to the temperature detection element 11 and the first resistor R1. The resistance value of the first resistor R1 is, for example, 3 kΩ.

[0025] As shown by the dashed line, a second resistor R2 may be electrically connected in series to the electrode of the temperature detection element 11 opposite to the electrode electrically connected to the first resistor R1. That is, the second resistor R2 may be electrically connected in series to the cathode 11c of the temperature detection element 11. In this case, the transistor Tr is electrically connected in parallel to the temperature detection element 11, the first resistor R1, and the second resistor R2. The resistance value of the second resistor R2 is, for example, 3 kΩ, similar to that of the first resistor R1.

[0026] One of the source and drain electrodes of the transistor Tr is electrically connected to the first wiring La between the first terminal 102a and the anode 11a of the temperature detection element 11. In this embodiment, the first resistor R1 is electrically connected in series to the anode 11a of the temperature detection element 11, so that one of the source and drain electrodes of the transistor Tr is electrically connected to the first wiring La between the first terminal 102a and the first resistor R1. Therefore, the first wiring La electrically connects the transistor Tr and the first resistor R1 to the first terminal 102a via a connection point Pa between the transistor Tr and the first resistor R1. Here, the electrostatic protection circuit 12 includes a third resistor R3 on the first wiring La between the first terminal 102a and the connection point Pa. The resistance value of the third resistor R3 is, for example, 10 kΩ, which is greater than the resistance value of the first resistor R1.

[0027] The other source-drain of the transistor Tr is electrically connected to the second wiring Lc between the second terminal 102c and the cathode 11c of the temperature detection element 11. When the second resistor R2 is electrically connected in series to the cathode 11c of the temperature detection element 11, the other source-drain of the transistor Tr is electrically connected to the second wiring Lc between the second terminal 102c and the second resistor R2. Therefore, the transistor Tr and the second resistor R2 are electrically connected to the second terminal 102c through a connection point Pc between the transistor Tr and the second resistor R2. The electrostatic discharge protection circuit 12 includes a fourth resistor R4 on the second wiring Lc between the second terminal 102c and the connection point Pc. The resistance of the fourth resistor R4 is, for example, 15 kΩ, which is greater than the resistance of the second resistor R2. The resistance value of the fourth resistor R4 is greater than the resistance value of the third resistor R3.

[0028] The wiring board 70 has a first end 701 electrically connected to the terminals 102 including the first terminal 102a and the second terminal 102c, and a second end 702 opposite the first end 701, and the second end 702 is electrically connected to the upper circuit 60 via a connector 61. The wiring board 70 is provided with a driving circuit element 75 that supplies image data and the like to the electro-optical panel 100p. The driving circuit element 75 is, for example, a driving IC. The upper circuit 60 is provided with an image control circuit 65 that outputs image data to the driving circuit element 75.

[0029] The higher-level circuit 60 is also provided with a temperature detection drive circuit 66 that drives the temperature detection circuit 1. Therefore, the wiring board 70 has a first connection wiring 76 electrically connected to the first wiring La via the first terminal 102a and a second connection wiring 77 electrically connected to the second wiring Lc via the second terminal 102c, and the first connection wiring 76 and the second connection wiring 77 are electrically connected to the temperature detection drive circuit 66. The first connection wiring 76 and the second connection wiring 77 are made of copper foil or the like provided on the wiring board 70.

[0030] In this embodiment, a first capacitance element C1 is provided on the wiring substrate 70. One electrode of the first capacitance element C1 is electrically connected to the first connection wiring 76, and the other electrode is electrically connected to the second connection wiring 77. More specifically, the wiring substrate 70 is provided with a first electrode portion 765 protruding from a midpoint of the first connection wiring 76 toward the second connection wiring 77, and a second electrode portion 775 protruding from a midpoint of the second connection wiring 77 toward the first connection wiring 76. A chip-type first capacitance element C1 is mounted on the first electrode portion 765 and the second electrode portion 775. The capacitance of the first capacitance element C1 is, for example, 0.22 μF. In the case of a chip-type first capacitance element C1, it is preferable that the long side direction of the first capacitance element C1 coincide with the extension direction of the wiring substrate 70. This configuration allows the dimension of the wiring substrate 70 to be shortened in the width direction perpendicular to the extension direction of the wiring substrate 70. Although the protruding first electrode portion 765 and second electrode portion 775 are provided, the present invention is not limited to this. For example, it is also possible to bend the first connection wiring 76 and the second connection wiring 77 in the width direction of the wiring substrate 70 while maintaining them parallel to each other, and mount the first capacitance element C1 on the copper foil of the main body of the first connection wiring 76 and the copper foil of the main body of the second connection wiring 77.

[0031] The first capacitance element C1 may be provided between the first wiring La and the second wiring Lc on the first substrate 10. However, in both cases where the first capacitance element C1 is provided on the wiring substrate 70 and where it is provided on the first substrate 10, one electrode of the first capacitance element C1 is electrically connected to the first wiring La and the other electrode is electrically connected to the second wiring Lc. The first capacitance element C1 may be built into a driving IC that constitutes the driving circuit element 75.

[0032] When the first capacitance element C1 is provided on the wiring substrate 70 as in this embodiment, the distance L1 from the first capacitance element C1 to the first end 701 is shorter than the distance L2 from the first capacitance element C1 to the second end 702. Furthermore, on the wiring substrate 70, the distance L3 from the driving circuit element 75 to the first end 701 is shorter than the distance L1 from the first capacitance element C1 to the first end 701.

[0033] The first connection wiring 76 or the second connection wiring 77 has, in a first extension portion extending from the first capacitance element C1 to the second end 702, a wide portion that is wider than a second extension portion extending from the first capacitance element C1 to the first end 701. In this embodiment, the second connection wiring 77 has, in a first extension portion 771 extending from the first capacitance element C1 to the second end 702, a wide portion 770 that is wider than a second extension portion 772 extending from the first capacitance element C1 to the first end 701.

[0034] In the electrostatic discharge protection circuit 12, the third capacitance element C3 and the fourth capacitance element C4 are electrically connected in series between the first wiring La and the second wiring Lc. More specifically, one electrode of the third capacitance element C3 is electrically connected to the first wiring La, one electrode of the fourth capacitance element C4 is electrically connected to the second wiring Lc, and the other electrode of the third capacitance element C3 is electrically connected to the other electrode of the fourth capacitance element C4. One electrode of the third capacitance element C3 is electrically connected to the first wiring La between the first terminal 102a and one source-drain region of the transistor Tr, and one electrode of the fourth capacitance element C4 is electrically connected to the second wiring Lc between the second terminal 102c and the other source-drain region of the transistor Tr. The capacitance of the third capacitance element C3 and the fourth capacitance element C4 is, for example, 5 pF.

[0035] A connection node Cn between the third capacitance element C3 and the fourth capacitance element C4 is electrically connected to the gate of the transistor Tr. The electrostatic discharge protection circuit 12 also includes a fifth resistance element R5 electrically connected in parallel to the third capacitance element C3. More specifically, a gate wiring Lg extending from the gate 33t of the transistor Tr is electrically connected to the connection node Cn between the third capacitance element C3 and the fourth capacitance element C4 and is further electrically connected to the second wiring Lc via the fifth resistance element R5. The resistance value of the fifth resistance element R5 is, for example, 500 kΩ.

[0036] In the electro-optical device 100 configured as described above, the diode D and other components of the temperature detection element 11 are formed during the process of forming the elements of the pixel 100a on the first substrate 10. For example, the diode D can be formed during the process of forming the pixel transistor 30 and the transistors for the driving circuit of the scanning line driving circuit 104. Alternatively, the first resistor R1, the second resistor R2, the third resistor R3, the fourth resistor R4, and the fifth resistor R5 can be formed during the process of doping impurities into the semiconductor layer after forming the semiconductor layer of the pixel transistor 30. Alternatively, the first resistor R1, the second resistor R2, the third resistor R3, the fourth resistor R4, and the fifth resistor R5 can be formed during the process of forming the metal layer, metal compound layer, or polysilicon layer that constitutes the gate electrode of the pixel transistor 30, the scanning line 3a, and the like. Furthermore, the third capacitor C3 and the fourth capacitor C4 can be formed during the process of forming the storage capacitor 55.

[0037] When the electro-optical device 100 configured as described above is mounted in an electronic device, the second end 702 of the wiring substrate 70 is electrically connected to the upper circuit 60 via the connector 61. In the upper circuit 60, the temperature detection drive circuit 66 supplies a constant drive current IF to the temperature detection element 11 via the first connection wiring 76 and the second connection wiring 77, and detects the voltage between the first connection wiring 76 and the second connection wiring 77 when the drive current IF is supplied as the output voltage VF of the temperature detection circuit 1. The temperature detection drive circuit 66 includes a second capacitance element C2 as a stabilizing capacitance between a wiring 666 that is the output side of the drive current IF of the constant current circuit 661 and a wiring 667 electrically connected to the ground potential GND. The wiring 666 is electrically connected to the first connection wiring 76 via the connector 61, and the wiring 667 is electrically connected to the second connection wiring 77 via the connector 61. The second capacitance element C2 stabilizes the measured value of the voltage VF in the upper circuit 60. The capacitance of the second capacitance element C2 is, for example, 0.1 μF, and is smaller than the capacitance of the first capacitance element C1.

[0038] Here, when a constant current is supplied, there is a good linear relationship between the forward voltage of the temperature detection element 11, which is made up of a diode D, and the temperature. Therefore, if the temperature detection drive circuit 66 supplies a minute forward drive current IF of about 100 nA to several μA to the temperature detection circuit 1 and detects the output voltage VF between the first terminal 102a and the second terminal 102c at that time, the upper circuit 60 can detect the temperature of the display area 10a of the electro-optical panel 100p. More specifically, the output voltage VF varies linearly with temperature within the specified temperature range when the electro-optical device 100 is used as a light valve or the like in a projection display device, as described below. Therefore, if the output voltage VF is calibrated in advance, the temperature of the electro-optical panel 100p can be detected. Since the temperature detection element 11 is disposed near the display area 10a, the temperature of the display area 10a can be accurately detected. Therefore, by controlling the temperature of the electro-optical panel 100p and correcting the image signal VID based on the output voltage VF of the temperature detection circuit 1, the electro-optical device 100 can be driven under appropriate conditions corresponding to the temperature of the display area 10a, thereby displaying high-quality images.

[0039] The gate 33t of the transistor Tr is electrically connected to the second wiring Lc via the fifth resistor R5. Therefore, in a static state, the gate 33t and the second wiring Lc are at the same potential. Therefore, the transistor Tr is off, and ideally, no current flows between the source and drain. Therefore, when the temperature detection element 11 detects temperature, the constant current supplied to the first wiring La flows through the temperature detection element 11, but not through the transistor Tr.

[0040] The electrostatic protection circuit 12 also protects the temperature detection element 11 from electrostatic discharge. More specifically, in the electrostatic protection circuit 12, in a static state, the gate-source voltage of the transistor Tr is 0 V, and the transistor Tr is off. When a surge current due to electrostatic discharge flows into the first terminal 102a, the third resistor R3 suppresses voltage fluctuations, and the potential of the gate 33t of the transistor Tr, which corresponds to the potential of the connection node Cn between the third capacitor C3 and the fourth capacitor C4, rises. This turns the transistor Tr on, and the surge current flows to the second terminal 102c via the transistor Tr and the second wiring Lc. The third resistor R3 reduces the surge current flowing from the first terminal 102a, and the fourth resistor R4 reduces the surge current flowing from the second terminal 102c. The period during which transistor Tr is on is determined by the third capacitance element C3, the fourth capacitance element C4, the fifth resistance element R5, and the gate capacitance of transistor Tr. After discharging, the gate-source voltage of transistor Tr returns to 0 V due to the fifth resistance element R5. Therefore, the surge current flowing through temperature detection element 11 is suppressed by electrostatic protection circuit 12, thereby protecting temperature detection element 11.

[0041] Furthermore, in this embodiment, in the wiring substrate 70 connected to the first substrate 10, the first capacitance element C1 is electrically connected between the first connection wiring 76 electrically connected to the first wiring La of the first substrate 10 and the second connection wiring 77 electrically connected to the second wiring Lc. Therefore, when handling the electro-optical device 100 alone, for example, if a surge current due to static electricity enters the first connection wiring 76 from the second end 702, the temperature detection circuit 1 is effectively protected. In detail, the first capacitance element C1, which has a large capacitance value, accumulates the entering charge, thereby preventing an excessive voltage from being applied to the temperature detection circuit 1.

[0042] Next, the features of the planar arrangement of each element of the temperature detection circuit 1 on the first substrate 10 will be described with reference to FIG. 5. As shown in FIG. 5, the first wiring La electrically connected to the first terminal 102a (not shown) includes, for example, a bent first resistor R1 and a third resistor R3. The first wiring La includes, for example, wiring containing aluminum and wiring containing polysilicon or the like with a high sheet resistance, such as the first resistor R1 and the third resistor R3. For example, the first resistor R1 and the third resistor R3 are each made of the same material in the same layer as the scanning line 3a. The first wiring La includes wiring containing aluminum between the first terminal 102a and the third resistor R3, between the third resistor R3 and the first resistor R1, and between the third resistor R3 and the temperature detection element 11. The first wiring La is electrically connected to the third capacitance element C3 and one of the source and drain of the transistor Tr described in FIG. 4. Between the first resistor R1 and the temperature detection element 11, the first wiring La extends across the sealing material 107 and is electrically connected to the anode 11a of the temperature detection element 11 arranged in the area overlapping with the parting 29.

[0043] The second wiring Lc electrically connected to the second terminal 102c (not shown) includes, for example, a bent fourth resistor element R4. The second wiring Lc includes, for example, a wiring containing aluminum and a wiring containing polysilicon or the like with a high sheet resistance value, like the fourth resistor element R4. For example, the fourth resistor element R4 is made of the same material in the same layer as the scanning line 3a. The second wiring Lc includes wiring containing aluminum between the second terminal 102c and the fourth resistor element R4 and between the fourth resistor element R4 and the temperature detection element 11. The second wiring Lc is electrically connected to the fourth capacitance element C4 and the other source / drain of the transistor Tr described in FIG. 4. The second wiring Lc also extends across the sealing material 107 and is electrically connected to the cathode 11c of the temperature detection element 11, which is located in a region overlapping with the parting 29.

[0044] Here, the first resistor element R1 is arranged in a region overlapping with the second substrate 20, while the third resistor element R3 and the fourth resistor element R4 are arranged in a region not overlapping with the second substrate 20. The fourth resistor element R4 has a larger resistance value than the third resistor element R3. Therefore, if they are formed in the same wiring layer, the layout area of ​​the fourth resistor element R4 is typically larger than the layout area of ​​the third resistor element R3. The third resistor element R3 also has a larger resistance value than the first resistor element R1. Therefore, if they are formed in the same wiring layer, the layout area of ​​the third resistor element R3 is typically larger than the layout area of ​​the first resistor element R1.

[0045] Furthermore, the transistor Tr is also arranged in a region that does not overlap with the second substrate 20. Note that in Fig. 5, elements of the temperature detection circuit 1 other than the first wiring La, the third resistor element R3, the first resistor element R1, the second wiring Lc, and the fourth resistor element R4 are illustrated symbolically.

[0046] 1-4. Functions and Effects of Embodiment 1 As described above, in the electro-optical device 100 of this embodiment, the first resistor element R1 is electrically connected in series to the temperature detection element 11, so when a surge current caused by static electricity enters, the voltage is divided by the first resistor element, making it possible to reduce the voltage applied to the temperature detection element 11. Furthermore, because the first resistor element R1 is electrically connected in series to the temperature detection element 11, it is possible to reduce the current to the temperature detection element 11 when a surge current enters. This allows for enhanced protection of the temperature detection element 11.

[0047] Surge current attenuation can also be achieved by increasing the resistance values ​​of the third and fourth resistor elements R3 and R4 without using the first resistor element R1. However, this would require a larger layout area for the third and fourth resistor elements R3 and R4. As a result, the transistor Tr must be located near the display area 10a, which may require the transistor Tr to be positioned so that it overlaps the second substrate 20. In this case, as the temperature of the display area 10a increases due to the illumination light irradiating the electro-optical device 100, the transistor Tr becomes hotter, increasing its leakage current. As a result, a portion of the drive current IF supplied to the temperature detection element 11 during temperature detection flows between the source and drain of the transistor Tr, making it impossible to drive the temperature detection element 11 with a predetermined constant current. Furthermore, if the transistor Tr is positioned so that it overlaps the second substrate 20, the transistor Tr is covered by a quartz substrate with low thermal conductivity, making it difficult to cool the transistor Tr. This reduces the accuracy of temperature detection, especially at high temperatures.

[0048] However, in this embodiment, since the first resistor R1 is provided separately from the third resistor R3 and the fourth resistor R4, there is no need to increase the size of the third resistor R3 and the fourth resistor R4. This allows the transistor Tr to be located at a position sufficiently separated from the display area 10a. Furthermore, the transistor Tr can be prevented from overlapping with the second substrate 20. This makes it possible to suppress an increase in leakage current of the transistor Tr due to an increase in temperature.

[0049] In this embodiment, the resistance value of the first resistor R1 is smaller than the resistance value of the third resistor R3, and the first resistor R1 is arranged to overlap the second substrate 20. The resistance value of the fourth resistor R4 is larger than the third resistor R3, and the third resistor R3 and the fourth resistor R4 are arranged not to overlap the second substrate 20.

[0050] Because the resistance value of the first resistor R1 is smaller than that of the third resistor R3, the layout area can be reduced. Furthermore, even immediately after a surge current enters, the surge current flowing through the first resistor R1 is small, so it is unlikely to become hot. Therefore, the effect on voltage VF of fluctuations in the resistance value of the first resistor R1 due to temperature increases can be ignored, so the first resistor R1 can be placed so as to overlap with the second substrate 20. This makes it easier to place the ESD protection circuit 12 on the first substrate 10.

[0051] Because the resistance value of the fourth resistor R4 is greater than the resistance value of the third resistor R3, it suppresses the maximum voltage applied to the transistor Tr and the temperature detection element 11 when a surge current enters from the second terminal 102c. When a surge current enters from the first terminal 102a, the entering charge escapes to the second terminal 102c through the transistor Tr and the temperature detection element 11. Conversely, when a surge current enters from the second terminal 102c, the entering charge escapes to the first terminal 102a through the transistor Tr. Therefore, if the resistance values ​​of the fourth resistor R4 and the third resistor R3 are the same, the maximum applied voltage to the transistor Tr and the temperature detection element 11 when a surge current enters from the second terminal 102c tends to be slightly higher. As a result, the withstand voltage tends to be slightly lower when a surge current enters from the second terminal 102c. However, if the resistance value of the fourth resistor R4 is made larger than the resistance value of the third resistor R3, the maximum voltage applied to the transistor Tr and the temperature detection element 11 when a surge current enters from the second terminal 102c is suppressed, thereby improving the withstand voltage when a surge current enters from the second terminal 102c.

[0052] The third resistor R3, the fourth resistor R4, and the transistor Tr are arranged so as not to overlap with the second substrate 20, which facilitates cooling even immediately after a surge current enters. When a surge current enters, the third resistor R3, the fourth resistor R4, and the transistor Tr serve as paths for most of the entering charge. Because the third resistor R3 and the fourth resistor R4 have relatively large resistance values, they are prone to becoming hot, and the impact of resistance value fluctuations on the voltage VF may not be negligible. If the transistor Tr also becomes hot and its leakage current increases, the impact on the voltage VF may not be negligible. However, by arranging the third resistor R3, the fourth resistor R4, and the transistor Tr so as not to overlap with the second substrate 20, they are not covered by a quartz substrate with low thermal conductivity, which allows for air cooling, making cooling easier.

[0053] One way to reduce the voltage applied to each diode D of the temperature detection element 11 when a surge current enters is to increase the number of diodes D connected in series. However, increasing the number of diodes D connected in series increases the operating point voltage of the temperature detection element 11, making it necessary to increase the drive voltage of the constant current circuit 661. This creates problems such as the configuration of the upper circuit 60 becoming more complex and expensive. However, according to this embodiment, the temperature detection element 11 can be protected without increasing the number of diodes D connected in series.

[0054] Furthermore, in this embodiment, the first capacitance element C1 is provided between the first connection wiring 76 and the second connection wiring 77 of the wiring substrate 70, thereby enhancing protection of the temperature detection circuit 1. For example, when handling the electro-optical device 100 alone, if a surge current due to static electricity intrudes into the first connection wiring 76 from the second end 702, the temperature detection circuit 1 is effectively protected. Specifically, the first capacitance element C1, which has a large capacitance value, accumulates the intruding charge, thereby preventing excessive voltage from being applied to the temperature detection circuit 1. Furthermore, since the first capacitance element C1 enhances protection of the temperature detection circuit 1, it is possible to reduce the size of the first resistance element R1, the second resistance element R2, the third resistance element R3, the fourth resistance element R4, the third capacitance element C3, the fourth capacitance element C4, and the transistor Tr.

[0055] Here, while a larger capacitance of the first capacitance element C1 would enhance its protection capability against surge current intrusion, the diode D, which constitutes the temperature detection element 11, is driven by a constant current of approximately 0.1 to 1 μA. In consideration of this situation, in this embodiment, the capacitance of the first capacitance element C1 is set to, for example, 1 μF or less. Therefore, the provision of the first capacitance element C1 does not interfere with the constant current drive of the temperature detection element 11. Increasing the drive current IF when driving the temperature detection element 11 at a constant current can increase the capacitance value of the first capacitance element C1 and improve protection capability against surge current intrusion. However, this increases the operating point voltage of the temperature detection element 11, necessitating an increase in the drive voltage of the constant current circuit. This results in a more complex and costly configuration of the upper circuit 60. However, according to this embodiment, the first capacitance element C1 can effectively protect the temperature detection circuit 1 without increasing the drive current IF when driving the temperature detection element 11 at a constant current.

[0056] Furthermore, a first capacitance element C1 is provided between the first connection wiring 76 and the second connection wiring 77, and the capacitance of the first capacitance element C1 is configured to be larger than the capacitance of the second capacitance element C2. This configuration enables protection of the temperature detection circuit 1, stabilization of the voltage VF, and responsiveness to temperature changes in the voltage VF. In the temperature detection circuit 1, the major factors determining the responsiveness of the voltage VF to temperature changes are the drive current IF, the first capacitance element C1, and the second capacitance element C2. Qualitatively, increasing the drive current IF and reducing the sum of the capacitances of the first capacitance element C1 and the second capacitance element C2 improves responsiveness. However, as explained above, increasing the drive current IF is difficult in order to avoid increasing the complexity and cost of the upper circuit 60. On the other hand, the first capacitance element C1 and the second capacitance element C2 must have a sufficiently large capacitance to protect the temperature detection circuit 1 and stabilize the voltage VF.

[0057] Therefore, in the first embodiment, the capacitance of the first capacitance element C1 is set to approximately 0.22 μF, and the capacitance of the second capacitance element C2 is set to approximately 0.1 μF. The capacitance of the first capacitance element C1 is set to be larger than the capacitance of the second capacitance element C2, thereby effectively enhancing protection of the temperature detection circuit 1. At the same time, the voltage VF is stabilized by the first capacitance element C1 and the second capacitance element C2. Furthermore, a practical temperature detection circuit can be achieved by setting the sum of the capacitances of the first capacitance element C1 and the second capacitance element C2 to approximately 1 μF or less. Specifically, if the temperature detection element 11 is configured with five diodes D connected in series and the drive current is approximately 0.7 μA, the constant current circuit 661 can be configured with a 5 V power supply. Furthermore, when the temperature of the electro-optical panel 100p suddenly changes from near room temperature to 80°C, the voltage VF follows the change in less than three seconds. This response is sufficient for controlling the airflow rate of a cooling fan and the heating mechanism.

[0058] Furthermore, in the wiring substrate 70, the distance L1 from the first capacitance element C1 to the first end 701 is shorter than the distance L2 from the first capacitance element C1 to the second end 702. Therefore, the potential of the second connection wiring 77, which is the cathode wiring, can be stabilized near the electro-optical panel 100p. Furthermore, since the wide portion 770 is provided in the second connection wiring 77, which corresponds to the cathode wiring, the wiring resistance of the second connection wiring 77 can be reduced. Since the wide portion 770 is provided on the second end 702 side, which has a longer wiring length, the wiring resistance of the second connection wiring 77 can be effectively reduced. Therefore, the potential of the cathode wiring in the wiring substrate 70 can be stabilized. Therefore, noise in the first connection wiring 76, which is the anode wiring, can be suppressed. As a result, the voltage VF is stabilized.

[0059] 2. Embodiment 2 6 is an explanatory diagram of an electro-optical device 100 according to a second embodiment of the present invention. Since the basic configuration of this embodiment is similar to that of the first embodiment, the same reference numerals are used to designate common parts, and the description thereof will be omitted.

[0060] In the first embodiment, the wiring board 70 was a single board. However, in the present embodiment, as shown in FIG. 6 , the wiring board 70 includes a first wiring board 71 connected to the first board 10 and a second wiring board 72 connecting the first wiring board 71 and the upper circuit 60, and the first wiring board 71 and the second wiring board 72 are electrically connected. Therefore, the end of the first wiring board 71 facing the first board 10 constitutes a first end 701 of the wiring board 70, and the end of the second wiring board 72 facing the upper circuit 60 constitutes a second end 702 of the wiring board 70. In the present embodiment, the first wiring board 71 is a COF (Chip on Film) on which the driving circuit elements 75 are mounted. Therefore, according to the present embodiment, the expensive first wiring board 71 can be shortened, thereby reducing costs.

[0061] Here, the first connection wiring 76 is made up of wiring 716 of the first wiring substrate 71 and wiring 726 of the second wiring substrate 72. The second connection wiring 77 is made up of wiring 717 of the first wiring substrate 71 and wiring 727 of the second wiring substrate 72. Here, the second connection wiring 77 is provided with a wide portion in a first extension portion 771 extending from the first capacitance element C1 to the second end portion 702. More specifically, a wide portion 770a is provided in a portion of the first wiring substrate 71 extending from the second electrode portion 775 toward the second wiring substrate 72, and a wide portion 770b is provided in the wiring 727 of the second wiring substrate 72. Note that, although FIG. 6 shows the entire wiring 727 of the second wiring substrate 72 as the wide portion 770b, the present invention is not limited to this. A configuration in which the wide portion 770b is provided partially may also be adopted.

[0062] Furthermore, in this embodiment, in the first connection wiring 76, the entire wiring 726 of the second wiring substrate 72 is made into a wide portion 760, so that the first connection wiring 76 has a first extension portion 761 extending from the first capacitance element C1 to the second end 702, which is wider than the second extension portion 762 extending from the first capacitance element C1 to the first end 701.

[0063] In the embodiment shown in FIG. 6, the first capacitance element C1 is provided on the first wiring board 71, but the first capacitance element C1 may be provided on the second wiring board 72.

[0064] 3. Another embodiment of the electro-optical device The electro-optical device 100 of the present invention is not limited to a liquid crystal device, and the present invention may be applied to electro-optical devices 100 other than liquid crystal devices, such as organic electroluminescence devices.

[0065] 4. Electronic device configuration examples Fig. 7 is a block diagram showing an example of the configuration of a projection type display device 1000 to which the present invention is applied. Fig. 8 is an explanatory diagram of the light path shift element 110 shown in Fig. 7. Note that polarizing plates and the like are omitted from Fig. 7. The projection type display device 1000 shown in Fig. 7 is an example of an electronic device to which the present invention is applied, and includes an illumination device 190, a separation optical system 170, three electro-optical devices 100R, 100G, and 100B, and a projection optical system 160. Each of the electro-optical devices 100R, 100G, and 100B is formed by the electro-optical device 100 described with reference to Figs. 1 to 6.

[0066] The illumination device 190 is a white light source, and for example, a laser light source or a halogen lamp is used. The separation optical system 170 includes three mirrors 171, 172, and 175 and dichroic mirrors 173 and 174. The separation optical system 170 separates the white light emitted from the illumination device 190 into three primary colors: red (R), green (G), and blue (B). Specifically, the dichroic mirror 174 transmits light in the red (R) wavelength range and reflects light in the green (G) and blue (B) wavelength ranges. The dichroic mirror 173 transmits light in the blue (B) wavelength range and reflects light in the green (G) wavelength range. The light corresponding to red (R), green (G), and blue (B) is guided to the electro-optical devices 100R, 100G, and 100B, respectively.

[0067] The light beams modulated by the electro-optical devices 100R, 100G, and 100B are incident on the dichroic prism 161 from three directions. The dichroic prism 161 constitutes a synthesis optical system that synthesizes red (R), green (G), and blue (B) images. Therefore, the projection lens system 162 enlarges and projects the synthesized image emitted from the light path shift element 110 onto a projection target such as a screen 180, thereby displaying a color image on the projection target such as the screen 180.

[0068] In this case, the control unit 150 can correct the image signals supplied to the electro-optical devices 100R, 100G, and 100B based on the temperature detection results of the temperature detection circuit 1. This allows high-quality projection images to be displayed even when the ambient temperature fluctuates. Furthermore, if a light path shift element 110 (shown by a dashed line) is provided in the projection optical system 160 on the side from which light is emitted from the dichroic prism 161, thereby shifting the position at which the projected pixel is viewed every predetermined period, it becomes necessary to drive the liquid crystal layer at high speed. Even in this case, the electro-optical layer 50, which is made of a liquid crystal layer, can be driven at high speed by correcting the image signals supplied to the electro-optical devices 100R, 100G, and 100B based on the temperature detection results of the temperature detection circuit 1 or by adjusting the temperature of the electro-optical panel 100p of the electro-optical devices 100R, 100G, and 100B.

[0069] As shown in Fig. 8, the light path shift element 110 is an optical element that shifts light emitted from the dichroic prism 161 in a predetermined direction. Fig. 8 illustrates an example in which the position of a projection pixel Pi, at which light emitted from each pixel 100a of the electro-optical panel 100p is visible, is shifted by the light path shift element 110 by a distance equivalent to 0.5 pixel pitches (=P / 2) to one side X1 in the X direction and a distance equivalent to 0.5 pixel pitches (=P / 2) to one side Y1 in the Y direction. The light path shift element 110 includes a light-transmitting plate, and an actuator, under the command of the control unit 150, swings the light-transmitting plate around an axis extending in the first direction X and / or around an axis extending in the second direction Y, thereby shifting the light path of the light emitted from each pixel 100a of the electro-optical panel 100p to light path LA and light path LB.

[0070] 5. Other embodiments of electronic devices The projection display device may be configured to use an LED light source or the like that emits light of each color as the light source unit, and supply each color light emitted from the LED light source to a separate liquid crystal device.

[0071] Electronic devices equipped with the electro-optical device 100 to which the present invention is applied are not limited to the projection display device 1000 of the above embodiment. For example, the present invention may be used in electronic devices such as a projection-type HUD (head-up display), a direct-view HMD (head-mounted display), a personal computer, a digital still camera, and a liquid crystal television. [Explanation of symbols]

[0072] 1...temperature detection circuit, 3a...scanning line, 6a...data line, 8a...common potential wiring, 9a...pixel electrode, 10...first substrate, 10a...display area, 11...temperature detection element, 11a...anode, 11c...cathode, 12...electrostatic protection circuit, 20...second substrate, 21...common electrode, 29...partition, 30...pixel transistor, 33t...gate electrode, 50...electro-optical layer, 60...upper circuit, 61...connector, 65...image control circuit, 6 6...Temperature detection drive circuit, 70...Wiring board, 71...First wiring board, 72...Second wiring board, 75...Drive circuit element, 76...First connection wiring, 77...Second connection wiring, 190...Illumination device, 100, 100B, 100G, 100R...Electro-optical device, 100a...Pixel, 100p...Electro-optical panel, 101...Data line drive circuit, 102a...First terminal, 102c...Second terminal, 104...Scanning line drive circuit, 105...Inspection Circuit, 110...light path shift element, 150...controller, 160...projection optical system, 161...dichroic prism, 162...projection lens system, 180...screen, 661...constant current circuit, 701...first end, 702...second end, 760, 770, 770a, 770b...wide portion, 765...first electrode portion, 775...second electrode portion, 1000...projection type display device, D, D1 to D5...diodes, C1...first capacitance element, C 2...second capacitance element, C3...third capacitance element, G...scanning signal, C4...fourth capacitance element, L1, L2, L3...distance, R1...first resistance element, R2...second resistance element, R3...third resistance element, R4...fourth resistance element, R5...fifth resistance element, IF...drive current, VF...output voltage, La...first wiring, Lc...second wiring, Pa, Pc...connection point, Cn...connection node, Lg...gate wiring, Tr...transistor, LCCOM...common potential

Claims

1. a first substrate; a second substrate bonded to the first substrate, The first substrate is A first terminal; A second terminal; A temperature detection element; a first resistor element electrically connected in series with the temperature detection element; an electrostatic protection circuit including a transistor electrically connected in parallel to the first resistance element and the temperature detection element, a third resistance element provided corresponding to the first terminal, and a fourth resistance element provided corresponding to the second terminal; An electro-optical device characterized in that the first resistance element and the temperature detection element are provided in an area of ​​the first substrate that overlaps with the second substrate, and the third resistance element and the fourth resistance element are provided in an area of ​​the first substrate that does not overlap with the second substrate.

2. 2. The electro-optical device according to claim 1, a sealant for bonding the first substrate and the second substrate together, The electro-optical device comprises: a first portion extending along the sealing material in a plan view; and a second portion intersecting the first portion.

3. 2. The electro-optical device according to claim 1, a first wiring electrically connecting the transistor and the first resistor element to the first terminal; a second wiring electrically connecting the transistor and the temperature detection element to the second terminal; An electro-optical device comprising:

4. 2. The electro-optical device according to claim 1, a second resistor element electrically connected to an electrode of the temperature detection element opposite to an electrode electrically connected to the first resistor element; The electro-optical device is characterized in that the electrostatic protection circuit is electrically connected in parallel to the first resistance element, the temperature detection element, and the second resistance element.

5. 5. The electro-optical device according to claim 4, The electro-optical device according to claim 1, wherein the resistance value of the third resistor element is greater than the resistance value of the first resistor element, and the resistance value of the fourth resistor element is greater than the resistance value of the second resistor element.

6. 6. The electro-optical device according to claim 1, The electro-optical device is characterized in that the temperature detection element and the electrostatic protection circuit are provided outside a display area.

7. 4. The electro-optical device according to claim 3, a wiring substrate electrically connected to the first terminal and the second terminal; The wiring substrate has a first connection wiring electrically connected to the first wiring via the first terminal, and a second connection wiring electrically connected to the second wiring via the second terminal.

8. 8. The electro-optical device according to claim 7, An electro-optical device comprising a first capacitance element having one electrode electrically connected to the first wiring and the other electrode electrically connected to the second wiring.

9. 9. The electro-optical device according to claim 8, An electro-optical device characterized in that the first capacitance element has one electrode electrically connected to the first connection wiring and the other electrode electrically connected to the second connection wiring on the wiring substrate.

10. 10. The electro-optical device according to claim 9, the wiring board has a first end connected to the electro-optical panel and a second end opposite to the first end, The electro-optical device, wherein the distance from the first capacitive element to the first end is shorter than the distance from the first capacitive element to the second end.

11. 11. The electro-optical device according to claim 10, the wiring board is provided with a driving circuit element that outputs an image signal to the electro-optical panel; The electro-optical device, wherein the distance from the driving circuit element to the first end is shorter than the distance from the first capacitance element to the first end.

12. 12. The electro-optical device according to claim 10, the first connection wiring has a first extending portion extending from the first capacitance element to the second end portion and a second extending portion extending from the first capacitance element to the first end portion; The electro-optical device, wherein the first extending portion has a wide portion that is wider than the second extending portion.

13. 13. The electro-optical device according to claim 10, The electro-optical device is characterized in that the wiring substrate comprises a first wiring substrate having the first end portion, and a second wiring substrate electrically connected to the first wiring substrate and having the second end portion.

14. 14. The electro-optical device according to claim 10, a temperature detection drive circuit that supplies a constant current to the temperature detection element via the first connection wiring and the second connection wiring, and detects a voltage between the first connection wiring and the second connection wiring when the constant current is supplied; the temperature detection drive circuit includes a second capacitance element between a wiring electrically connected to the first connection wiring and a wiring electrically connected to the second connection wiring; The electro-optical device according to claim 1, wherein the capacitance of the second capacitance element is smaller than the capacitance of the first capacitance element.

15. An electronic device comprising the electro-optical device according to claim 1 .

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