Electrode foil for electrolytic capacitor, electrolytic capacitor, and method for manufacturing electrode foil for electrolytic capacitor

Abstract

An electrode foil for an electrolytic capacitor comprises an anode body containing a valve metal, a first dielectric layer covering at least a portion of the anode body, and a second dielectric layer covering at least portion of the first dielectric layer. The second dielectric layer has a higher dielectric constant than the first dielectric layer, and the thickness T2 of the second dielectric layer is greater than the thickness T1 of the first dielectric layer. The first dielectric layer suppresses diffusion of oxygen from the second dielectric layer to the anode body.

Description

[Technical Field]

[0001] The present disclosure relates to an electrode foil for an electrolytic capacitor, an electrolytic capacitor, and a method for manufacturing an electrode foil for an electrolytic capacitor. [Background technology]

[0002] The electrode foil of an electrolytic capacitor includes an anode body and a dielectric layer covering at least a portion of the surface of the anode body. The anode body is made of a metal foil containing a valve metal. To increase the capacitance of the electrolytic capacitor, the surface of the metal foil is roughened by etching or the like.

[0003] The dielectric layer is formed, for example, by chemically treating a metal foil having a roughened surface. A method of forming the dielectric layer by atomic layer deposition has also been investigated (for example, Patent Document 1). [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2012-43960 Summary of the Invention [Problem to be solved by the invention]

[0005] When a layer of metal oxide with a high dielectric constant (dielectric layer) is formed to increase capacity, oxygen in the dielectric layer may migrate to the anode body when a high voltage is applied, which may reduce the insulating properties of the dielectric layer and increase leakage current. [Means for solving the problem]

[0006] One aspect of the present disclosure relates to an electrode foil for an electrolytic capacitor, comprising: an anode body containing a valve metal; a first dielectric layer covering at least a portion of the anode body; and a second dielectric layer covering at least a portion of the first dielectric layer, wherein the second dielectric layer has a higher dielectric constant than the first dielectric layer, a thickness T2 of the second dielectric layer is greater than a thickness T1 of the first dielectric layer, and the first dielectric layer is a layer that suppresses oxygen diffusion from the second dielectric layer to the anode body.

[0007] Another aspect of the present disclosure relates to an electrolytic capacitor including the above-described electrode foil for an electrolytic capacitor and a cathode part covering at least a part of the second dielectric layer.

[0008] Yet another aspect of the present disclosure relates to a method for manufacturing an electrode foil for an electrolytic capacitor, including: a first step of preparing an anode body containing a valve action metal; a second step of forming a first dielectric layer covering at least a portion of the anode body; and, after the second step, a third step of forming a second dielectric layer covering at least a portion of the first dielectric layer, wherein the second dielectric layer has a higher dielectric constant than the first dielectric layer, a thickness T2 of the second dielectric layer is greater than a thickness T1 of the first dielectric layer, and the first dielectric layer is a layer that suppresses oxygen diffusion from the second dielectric layer to the anode body. [Effects of the Invention]

[0009] According to the present disclosure, it is possible to increase the capacitance of an electrolytic capacitor while suppressing an increase in leakage current.

[0010] The novel features of the present invention are set forth in the appended claims, but the present invention, both in terms of structure and content, together with other objects and features of the present invention, will be better understood from the following detailed description taken in conjunction with the drawings. [Brief explanation of the drawings]

[0011] [Figure 1] FIG. 2 is a cross-sectional view schematically illustrating a surface portion of an electrode foil according to an embodiment of the present disclosure. [Figure 2]1 is a cross-sectional view schematically illustrating an electrolytic capacitor according to an embodiment of the present disclosure. [Figure 3] FIG. 2 is a perspective view showing a part of the wound body unfolded. [Figure 4] FIG. 10 is a cross-sectional view schematically illustrating an electrolytic capacitor according to another embodiment of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0012] The following describes embodiments of the present disclosure using examples, but the present disclosure is not limited to the examples described below. In the following description, specific numerical values ​​and materials may be exemplified, but other numerical values ​​and materials may be applied as long as the effects of the present disclosure are obtained. In this specification, the expression "numerical value A to numerical value B" includes numerical value A and numerical value B and can be interpreted as "numerical value A or more and numerical value B or less." In the following description, when lower and upper limits of numerical values ​​related to specific physical properties or conditions are exemplified, any of the exemplified lower limits and any of the exemplified upper limits can be arbitrarily combined, as long as the lower limit is not equal to or greater than the upper limit. When multiple materials are exemplified, one of the materials may be selected and used alone, or two or more of the materials may be used in combination.

[0013] [Electrode foil for electrolytic capacitors] An electrode foil for an electrolytic capacitor according to an embodiment of the present disclosure includes an anode body containing a valve metal, a first dielectric layer covering at least a portion of the anode body, and a second dielectric layer covering at least a portion of the first dielectric layer. The second dielectric layer has a higher dielectric constant than the first dielectric layer, and a thickness T2 of the second dielectric layer is greater than a thickness T1 of the first dielectric layer. The first dielectric layer is a layer that suppresses oxygen diffusion from the second dielectric layer to the anode body.

[0014] By providing the electrode foil with a second dielectric layer with a high dielectric constant, it is possible to increase the capacitance. By interposing a first dielectric layer with a low dielectric constant and excellent insulation between the anode body and the second dielectric layer, oxygen transfer from the second dielectric layer to the anode body is suppressed, the insulation properties of the second dielectric layer are maintained, and an increase in leakage current (LC) is suppressed. In addition, a decrease in the withstand voltage is also suppressed. Therefore, an electrolytic capacitor with a large CV value and a small LC can be obtained.

[0015] If the first dielectric layer were not interposed between the anode body and the second dielectric layer, oxygen would migrate from the second dielectric layer to the anode body, reducing the amount of oxygen in the second dielectric layer and reducing the insulating properties of the second dielectric layer. Furthermore, the oxygen migrated from the second dielectric layer to the anode body forms an oxide film (a film of valve metal oxide) on the surface of the anode body. This oxide film cannot compensate for the insufficient voltage resistance of the second dielectric layer, resulting in increased leakage current.

[0016] This oxygen migration occurs, for example, when a chemical conversion coating is formed on the cut surface of the electrode foil after the wound body is formed, or when a reflow process is performed on the assembled electrolytic capacitor. This oxygen migration is likely to occur when a high voltage is applied or when a high temperature load is applied. For example, this oxygen migration is likely to occur when the above-mentioned chemical conversion process is performed at a chemical conversion voltage of 15 V or higher, or when a reflow process is performed at 200°C or higher. In such cases, the first dielectric layer significantly suppresses the increase in LC.

[0017] (first dielectric layer) The first dielectric layer is a layer that suppresses oxygen diffusion from the second dielectric layer to the anode body (hereinafter, also referred to simply as a suppression layer). The first dielectric layer contains a first metal oxide (hereinafter, also referred to as a first oxide). The first oxide contains a first metal. From the viewpoint of reducing LC, the first metal is preferably at least one selected from the group consisting of silicon (Si) and aluminum (Al). The first dielectric layer may contain, for example, SiO2, Al2O3, etc., either alone or in combination. When the first dielectric layer contains two or more oxides of the first metal, the oxides may be mixed or arranged in layers.

[0018] The first dielectric layer contains a first metal and is substantially free of a second metal, where being substantially free of the second metal means that the second metal is below the detection limit in energy dispersive X-ray spectroscopy (EDX) analysis.

[0019] (Second dielectric layer) The second dielectric layer contains a second metal oxide (hereinafter also referred to as the second oxide) having a higher dielectric constant than the first metal oxide. The second oxide contains a second metal different from the first metal. The oxide of the second metal has a higher dielectric constant than the oxide of the first metal. From the viewpoint of increasing capacitance, the second metal is preferably at least one selected from the group consisting of tantalum (Ta), titanium (Ti), zirconium (Zr), niobium (Nb), and hafnium (Hf). The second dielectric layer may contain, for example, Ta2O5, TiO2, ZrO2, Nb2O5, HfO2, etc., either alone or in combination. When the second dielectric layer contains two or more types of oxides of the second metal, the two or more types of oxides may be mixed or may be arranged in layers.

[0020] The second oxide may contain a first metal (e.g., at least one selected from the group consisting of silicon and aluminum) together with the second metal. That is, the second oxide may be a composite oxide in which an oxide of the first metal and an oxide of the second metal are mixed. When the oxide of the second metal is prone to crystallization and tends to have a large LC, the use of a composite oxide can suppress crystallization, making it easier to obtain the effect of suppressing an increase in LC. When the second metal is Ti, the effect of using a composite oxide is particularly remarkable. For example, when the second dielectric layer is a composite oxide layer in which TiO2 and Al2O3 are mixed, the molar ratio of Ti / Al in the composite oxide layer may be, for example, 2 or more and 6 or less.

[0021] The first and second dielectric layers can be confirmed as follows. A cross-sectional image (including the porous portion) of the electrode foil in the thickness direction is obtained using a scanning electron microscope (SEM) or a transmission electron microscope (TEM). This image is then used for elemental mapping by energy dispersive X-ray spectroscopy (EDX) analysis to obtain a map of the first and second metals in the metal oxide layer covering the surface of the anode body. The image is then used to distinguish the metal structure region that constitutes the anode body from the metal oxide regions that constitute the first and second dielectric layers. For example, the two regions can be distinguished by binarizing the image. In this elemental mapping, a region of the metal oxide region where the second metal is distributed is identified and designated as the second dielectric layer. A region of the metal oxide region between the anode body and the second dielectric layer where the first metal is distributed but the second metal is not (below the detection limit for the second metal) is identified and designated as the first dielectric layer.

[0022] The thickness T2 of the second dielectric layer is greater than the thickness T1 of the first dielectric layer. T1 / T2 may be, for example, 0.6 or less, 0.3 or less, or 0.1 or less. This ensures a sufficient high dielectric constant for the second dielectric layer, resulting in a large capacitance. The thickness T1 of the first dielectric layer is determined by measuring the thickness of any 10 locations on the first dielectric layer confirmed by elemental mapping of the cross-sectional image in the thickness direction of the electrode foil and calculating the average value. The thickness T2 of the second dielectric layer is also determined in the same manner as the thickness T1 of the first dielectric layer.

[0023] From the viewpoint of sufficiently suppressing oxygen transfer from the second dielectric layer to the anode body, the thickness T1 of the first dielectric layer may be 0.3 nm or more.

[0024] From the viewpoint of easily achieving both a low LC due to the first dielectric layer and an increased capacitance due to the second dielectric layer, when the first metal contains Si, the ratio of the thickness T1 of the first dielectric layer to the thickness T2 of the second dielectric layer (T1 / T2) may be 0.45 or less, 0.2 or less, or 0.1 or less. From the same viewpoint, when the first metal contains Al, T1 / T2 may be 0.6 or less, 0.25 or less, or 0.1 or less. When T1 / T2 is within the above range, an electrolytic capacitor with a large CV value and low LC is easily obtained.

[0025] An example of an electrode foil according to an embodiment of the present disclosure will now be described with reference to Fig. 1. Fig. 1 is a cross-sectional view schematically showing a surface portion of an electrode foil according to an embodiment of the present disclosure.

[0026] Anode foil 10 (electrode foil) includes an anode body 110 and a dielectric layer 120 that covers at least a portion of anode body 110. Dielectric layer 120 includes a first dielectric layer 121 that covers at least a portion of anode body 110, and a second dielectric layer 122 that covers at least a portion of first dielectric layer 121. Second dielectric layer 122 has a higher dielectric constant than first dielectric layer 121. A thickness T2 of second dielectric layer 122 is greater than a thickness T1 of first dielectric layer 121.

[0027] Anode body 110 is a metal foil containing a valve metal and has a surface roughened by etching or the like, and has core portion 111 and porous portion 112. Porous portion 112 has a large number of pits P. Dielectric layer 120 (first dielectric layer 121 and second dielectric layer 122) covers the outer surface of porous portion 112 and the inner wall surfaces of pits P.

[0028] [Method of manufacturing electrode foil for electrolytic capacitors] A method for manufacturing an electrode foil for an electrolytic capacitor according to an embodiment of the present disclosure includes a first step of preparing an anode body containing a valve metal, a second step of forming a first dielectric layer that covers at least a portion of the anode body, and a third step of forming a second dielectric layer that covers at least a portion of the first dielectric layer after the second step. The second dielectric layer has a higher dielectric constant than the first dielectric layer. The thickness T2 of the second dielectric layer is greater than the thickness T1 of the first dielectric layer. The first dielectric layer is a layer that suppresses oxygen diffusion from the second dielectric layer to the anode body. Each step will be described in detail below.

[0029] (1st step) The anode body contains a valve metal such as tantalum, niobium, titanium, aluminum, etc. The anode body is made of, for example, a metal foil whose surface has been roughened by etching or the like. The thickness of the metal foil is, for example, 15 μm or more and 300 μm or less.

[0030] The metal foil having a roughened surface has a porous portion and a core portion continuous with the porous portion. The porous portion has a large number of pits. The most frequent pore diameter of the pits in the porous portion is not particularly limited, but is, for example, 50 nm or more and 2000 nm or less, which facilitates obtaining a large surface area and forming a dielectric layer deep in the pits. The most frequent pore diameter of the pits is the most frequent pore diameter in a volumetric pore size distribution measured with a mercury porosimeter. The thickness D of the porous portion per side is not particularly limited, but is, for example, 1 / 10 to 4 / 10 of the total thickness of the metal foil, from the viewpoint of ensuring a large surface area and maintaining the strength of the electrode foil. The thickness D of the porous portion per side is determined by measuring the thickness at any 10 points using a cross-sectional image of the metal foil taken by SEM or TEM and calculating the average value.

[0031] (2nd process) In the second step, the first dielectric layer may be formed by atomic layer deposition (ALD) or chemical conversion treatment. In the case of chemical conversion treatment, a layer of an oxide of a valve metal is formed as the first dielectric layer, and the valve metal serves as the first metal. In the case of ALD, the first metal can be selected appropriately regardless of the valve metal contained in the anode body. Chemical conversion treatment is performed, for example, by immersing the anode body in a chemical conversion solution such as an ammonium adipate solution and applying a predetermined chemical conversion voltage (anodic oxidation). In the case of chemical conversion treatment, the thickness T1 of the first dielectric layer can be controlled by the chemical conversion voltage, etc.

[0032] In the ALD method, a first dielectric layer can be formed on the surface of the target by alternately supplying a source gas containing a first metal and an oxidizer to a reaction chamber containing the target. Because the ALD method utilizes a self-limiting mechanism, the first metal is deposited on the surface of the target in atomic layers. Therefore, the thickness T1 of the first dielectric layer can be easily controlled by the number of cycles: supply of source gas → exhaust (purging) of source gas → supply of oxidizer → exhaust (purging) of oxidizer.

[0033] Examples of the oxidizing agent include water, oxygen, ozone, etc. The oxidizing agent may be supplied to the reaction chamber as plasma using the oxidizing agent as a raw material.

[0034] The first metal is supplied to the reaction chamber as a precursor gas (raw material gas) containing the first metal. The precursor is, for example, an organometallic compound containing the first metal, which makes the first metal more likely to be chemically adsorbed to the target object. As the precursor, various organometallic compounds conventionally used in the ALD method can be used.

[0035] Examples of precursors containing the first metal include precursors containing Al, precursors containing Si, etc. Examples of precursors containing Al include trimethylaluminum ((CH3)3Al).

[0036] Examples of precursors containing Si include N-sec-butyl(trimethylsilyl)amine (CH 19 NSi), 1,3-diethyl-1,1,3,3-tetramethyldisilazane (CH 23 NSi2), 2,4,6,8,10-pentamethylcyclopentasiloxane ((CH3SiHO)5), pentamethyldisilane ((CH3)3SiSi(CH3)2H), tris(dimethylamino)silane ([(CH3)2N]3SiH), tris(isopropoxy)silanol ([(H3C)2CHO]3SiOH), chloropentanemethyldisilane ((CH3)3SiSi(CH3)2 Cl), dichlorosilane (SiH2Cl2), tridimethylaminosilane (Si[N(CH3)2]4), tetraethylsilane (Si(C2H5)4), tetramethylsilane (Si(CH3)4), tetraethoxysilane (Si(OC2H5)4), dodecamethylcyclohexasilane ((Si(CH3)2)6), silicon tetrachloride (SiCl4), silicon tetrabromide (SiBr4), etc.

[0037] The first metal may be used singly or in combination of two or more. When two or more first metals are used in combination, a precursor containing two or more first metals may be used. In this case, the type of precursor supplied to the reaction chamber may be changed depending on the cycle, thereby changing the type of first metal deposited in atomic layer units. In this case, a first dielectric layer (a layer of complex oxide) containing a mixture of oxides of two or more first metals can be formed.

[0038] (3rd step) In the third step, the second dielectric layer is preferably formed by the ALD method in the same manner as described above. The second metal can be appropriately selected relative to the first metal, and the thickness T2 of the second dielectric layer can be easily controlled by the number of cycles. In the step of forming the second dielectric layer by the ALD method, the second metal is supplied to the reaction chamber as a precursor gas (raw material gas) containing the second metal. Examples of precursors containing the second metal include precursors containing Ta, precursors containing Ti, precursors containing Zr, precursors containing Nb, and precursors containing Hf.

[0039] Examples of precursors containing Ta include tris(ethylmethylamido)(t-butylamido)tantalum(V) (C 13 H 33 N4Ta), tantalum(V) ethoxide (Ta(OC2H5)5), tris(diethylamido)(t-butylimido)tantalum(V) ((CH3)3CNTa(N(C2H5)2)3), pentakis(dimethylamino)tantalum(V) (Ta(N(CH3)2)5).

[0040] Examples of precursors containing Ti include bis(t-butylcyclopentadienyl)titanium(IV) dichloride (C 18 H 26 C l2 Titanium(IV) diisopropoxide (Ti[OCC(CH)CHCOC(CH)](OCH)), titanium(IV) ethoxide (Ti[O(CH)]), titanium(IV) tetrakis(dimethylamino)titanium(IV) ([(CHN]Ti), tetrakis(diethylamino)titanium(IV) ([(CH)N]Ti), tetrakis(ethylmethylamino)titanium(IV) (Ti[N(CH)(CH)]), titanium(IV) diisopropoxide-bis(2,2,6,6-tetramethyl-3,5-heptanedionate (Ti[OCC(CH)CHCOC(CH)](OCH)), titanium tetrachloride (TiCl), titanium(IV) isopropoxide (Ti[OCH(CH)]), titanium(IV) ethoxide (Ti[O(CH)]).

[0041] Examples of Zr-containing precursors include bis(methyl-η 5 -cyclopentadienyl)methoxymethylzirconium (Zr(CH3C5H4)2CH3OCH3), tetrakis(dimethylamido)zirconium(IV) ([(CH3)2N]4Zr), tetrakis(ethylmethylamido)zirconium(IV) (Zr(NCH3C2H5)4), zirconium(IV) t-butoxide (Zr[OC(CH3)3]4).

[0042] Examples of precursors containing Nb include niobium(V) ethoxide (Nb(OCH2CH3)5, tris(diethylamido)(t-butylimido)niobium(V) (C 16 H 39 N4Nb) and others.

[0043] Examples of precursors containing Hf include hafnium tetrachloride (HfCl4), tetrakisdimethylaminohafnium (Hf[N(CH3)2]4), tetrakisethylmethylaminohafnium (Hf[N(C2H5)(CH3)]4), tetrakisdiethylaminohafnium (Hf[N(C2H5)2]4), and hafnium-t-butoxide (Hf[OC(CH3)3]4).

[0044] The second metal may be used singly or in combination of two or more. When two or more second metals are used in combination, a precursor containing two or more second metals may be used. In this case, the type of precursor supplied to the reaction chamber may be changed depending on the cycle, thereby changing the type of second metal deposited in atomic layer units. In this case, a second dielectric layer (a layer of complex oxide) containing a mixture of oxides of two or more second metals can be formed.

[0045] The first metal may also be used in combination with the second metal. In this case, a precursor containing the first metal and the second metal may be used. In this case, the type of precursor supplied to the reaction chamber may be changed depending on the cycle, thereby changing the metal species deposited in atomic layer units. In this case, a second dielectric layer (complex oxide layer) containing a mixture of oxides of the first metal and oxides of the second metal can be formed. In the ALD method, it is easy to control the mixture ratio of the oxides of the first metal and the second metal in the complex oxide layer.

[0046] The process of forming the second dielectric layer (third process) is performed after the process of forming the first dielectric layer (second process). In this case, the first dielectric layer functions as a suppression layer for the second dielectric layer. When the first dielectric layer with a thickness T1 functions as a suppression layer for the second dielectric layer with a thickness T2, the LC value can be reduced to, for example, 1 / 2 or less compared to when the dielectric layer with a thickness equal to the sum of T1 and T2 is composed only of the second dielectric layer.

[0047] If a chemical conversion coating is formed as the first dielectric layer between the anode body and the second dielectric layer by performing a chemical conversion treatment after the formation of the second dielectric layer, the first dielectric layer will not function as a suppression layer. In this case, the insulating properties of the second dielectric layer will be reduced by the chemical conversion treatment performed to form the first dielectric layer, and the LC value will increase.

[0048] [Electrolytic capacitor] An electrolytic capacitor according to an embodiment of the present disclosure includes the above-described electrolytic capacitor electrode foil and a cathode portion covering at least a portion of the second dielectric layer. Hereinafter, the above-described electrolytic capacitor electrode foil and the cathode portion are collectively referred to as a capacitor element. The cathode portion includes an electrolyte. The electrolyte covers at least a portion of the second dielectric layer. The electrolyte includes at least one of a solid electrolyte and an electrolytic solution. The cathode portion may include a solid electrolyte and an electrolytic solution, or may include a solid electrolyte and a solvent (e.g., a polyol compound).

[0049] The solid electrolyte includes a conductive polymer. Examples of the conductive polymer include π-conjugated polymers. Examples of the conductive polymer include polypyrrole, polythiophene, polyfuran, and polyaniline. The conductive polymer may be used alone or in combination of two or more types, or may be a copolymer of two or more types of monomers. The weight-average molecular weight of the conductive polymer is, for example, 1,000 to 100,000.

[0050] In this specification, polypyrrole, polythiophene, polyfuran, polyaniline, etc. refer to polymers having polypyrrole, polythiophene, polyfuran, polyaniline, etc. as their basic skeletons, respectively. Therefore, polypyrrole, polythiophene, polyfuran, polyaniline, etc. may also include their respective derivatives. For example, polythiophene includes poly(3,4-ethylenedioxythiophene) (PEDOT), etc.

[0051] The conductive polymer may be doped with a dopant. Examples of the dopant include polystyrene sulfonic acid (PSS). The solid electrolyte may further contain an additive, if necessary.

[0052] The electrolytic solution contains a solvent and an ionic substance (solute (e.g., organic salt)) dissolved therein. The solvent may be an organic solvent or an ionic liquid. A high-boiling point solvent is preferable as the solvent. For example, a polyol compound such as ethylene glycol, a sulfone compound such as sulfolane, a lactone compound such as γ-butyrolactone, an ester compound such as methyl acetate, a carbonate compound such as propylene carbonate, an ether compound such as 1,4-dioxane, a ketone compound such as methyl ethyl ketone, etc. can be used. One type of solvent may be used alone, or two or more types may be used in combination.

[0053] An organic salt is a salt in which at least one of the anion and cation contains an organic substance. Examples of organic salts that can be used include trimethylamine maleate, triethylamine borodisalicylate, ethyldimethylamine phthalate, mono-1,2,3,4-tetramethylimidazolinium phthalate, and mono-1,3-dimethyl-2-ethylimidazolinium phthalate. One type of organic salt may be used alone, or two or more types may be used in combination.

[0054] Here, Fig. 2 is a cross-sectional view schematically illustrating an electrolytic capacitor according to an embodiment of the present disclosure, and Fig. 3 is a perspective view in which a portion of the wound body is developed.

[0055] The wound electrolytic capacitor 200 includes a capacitor element. The capacitor element includes a wound body 100 and an electrolyte (not shown). The wound body 100 is formed by winding an anode foil 10 and a cathode foil 20 with a separator 30 interposed therebetween. The anode foil 10 is an electrode foil for an electrolytic capacitor according to the present disclosure. The separator 30 is not particularly limited, and may be, for example, a nonwoven fabric containing fibers of cellulose, polyethylene terephthalate, vinylon, or polyamide.

[0056] One end of lead tabs 50A and 50B is connected to anode foil 10 and cathode foil 20, respectively, and lead tabs 50A and 50B are wound to form wound body 100. Lead wires 60A and 60B are connected to the other end of lead tabs 50A and 50B, respectively.

[0057] A stop tape 40 is disposed on the outer surface of the cathode foil 20 located in the outermost layer of the wound body 100, and the ends of the cathode foil 20 are fixed by the stop tape 40. When the anode foil 10 is prepared by cutting it from a large foil, the wound body 100 may be further subjected to a chemical conversion treatment in order to provide a dielectric layer on the cut surface.

[0058] The electrolyte is contained in the wound body 100 and is interposed between the anode foil 10 and the cathode foil 20 in the wound body 100. For example, the wound body can be impregnated with the electrolyte by impregnating the wound body with a treatment liquid (or electrolytic solution) containing a conductive polymer. The impregnation may be performed under reduced pressure, for example, in an atmosphere of 10 kPa to 100 kPa.

[0059] The wound body 100 is housed in the bottomed case 211 so that the lead wires 60A and 60B are located on the opening side of the bottomed case 211. The material of the bottomed case 211 can be a metal such as aluminum, stainless steel, copper, iron, brass, or an alloy of these metals.

[0060] A sealing member 212 is placed at the opening of a bottomed case 211 in which the wound body 100 is stored, the open end of the bottomed case 211 is crimped to the sealing member 212 and curled, and a seat plate 213 is placed at the curled portion, thereby sealing the wound body 100 within the bottomed case 211.

[0061] Sealing member 212 is formed so that lead wires 60A and 60B can pass through it. Sealing member 212 may be made of any insulating material, and is preferably made of an elastic material. Among these, highly heat-resistant materials such as silicone rubber, fluororubber, ethylene propylene rubber, hypalon rubber, butyl rubber, and isoprene rubber are preferred.

[0062] FIG. 4 is a cross-sectional view schematically showing an electrolytic capacitor according to another embodiment of the present disclosure.

[0063] The stacked electrolytic capacitor 400 includes a capacitor element 402, an anode lead terminal 404 and a cathode lead terminal 405 electrically connected to the capacitor element 402, and a resin exterior body 403 that seals the capacitor element 402. The anode lead terminal 404 and the cathode lead terminal 405 are partially covered by the exterior body 403. The exterior body 403 has a substantially rectangular parallelepiped outer shape, and the electrolytic capacitor 400 also has a substantially rectangular parallelepiped outer shape.

[0064] Capacitor element 402 includes an anode body (metal foil containing a valve metal) having a cathode-forming portion 406a and an anode lead-out portion 406b, a dielectric layer 407 covering cathode-forming portion 406a, and a cathode portion 408 covering dielectric layer 407. The anode body has a porous portion on its surface, and dielectric layer 407 is formed so as to cover the surface of the porous portion of cathode-forming portion 406. Anode foil 460 is composed of cathode-forming portion 406a of the anode body and dielectric layer 407. Anode foil 460 is an electrode foil for an electrolytic capacitor according to the present disclosure.

[0065] An insulating separation layer 413 is formed on a portion of anode lead portion 406b adjacent to cathode portion 408, preventing contact between cathode portion 408 and anode foil 460. Anode lead portion 406b and anode lead terminal 404 are electrically connected by welding. Cathode lead terminal 405 is electrically connected to cathode portion 408 via adhesive layer 414 made of a conductive adhesive.

[0066] Cathode section 408 includes solid electrolyte layer 409 covering dielectric layer 407 and cathode extraction layer 410 covering solid electrolyte layer 409. Solid electrolyte layer 409 contains a conductive polymer and may contain a dopant, etc., as necessary. Solid electrolyte layer 409 can be formed, for example, by impregnating anode foil 460 with a treatment solution containing the conductive polymer.

[0067] The cathode extraction layer 410 includes a carbon layer 411 and a silver paste layer 412. The carbon layer 411 contains, for example, carbon particles and silver. The silver paste layer 412 contains, for example, silver particles and a binder. The binder is not particularly limited, but is preferably a cured product of a curable resin. Examples of the curable resin include thermosetting resins such as epoxy resins.

[0068] The exterior body 403 preferably contains a cured product of a curable resin composition, and may contain a thermoplastic resin or a composition containing the same. Examples of the curable resin include thermosetting resins such as epoxy resins.

[0069] Instead of a metal foil containing a valve metal and having a roughened surface, a porous sintered body obtained by sintering particles containing a valve metal may be used as the anode body. A part of a metallic lead member is embedded in the porous sintered body.

[0070] [Example] Hereinafter, the present disclosure will be described in more detail based on examples, but the present disclosure is not limited to these examples.

[0071] Examples 1 to 3, Comparative Example 7 A wound electrolytic capacitor (diameter Φ6.3 mm×length L9.9 mm) was fabricated with a rated voltage of 2.0 V. A specific method for fabricating the electrolytic capacitor will be described below.

[0072] (Preparation of anode foil) (First step: Preparation of anode body) An Al foil with a thickness of 120 μm was prepared, and the surface of the Al foil was roughened by etching to form a porous portion (thickness of 40 μm per side, pit diameter of 100 to 200 nm). In this way, an anode body was obtained.

[0073] (Second step: Formation of first dielectric layer) A first dielectric layer (first metal oxide layer) was formed on the surface of the anode body by the ALD method (temperature: 150°C, precursor: Si-containing precursor, oxidizer: O3, pressure: 1 Pa). Tridimethylaminosilane was used as the Si-containing precursor, and Si oxide (SiO x The number of cycles was adjusted appropriately to give the thickness T1 of the first dielectric layer the value shown in Table 1.

[0074] (Third step: Formation of second dielectric layer) A second dielectric layer (a layer of a second metal oxide) was formed on the surface of the first dielectric layer by the ALD method (temperature: 150°C, precursor: Ti-containing precursor and Al-containing precursor, oxidant: HO, pressure: 1 Pa).

[0075] Tetrakis(dimethylamino)titanium(IV) was used as the Ti-containing precursor, and trimethylaluminum was used as the Al-containing precursor. Six cycles constitute one set, and in each set, a Ti-containing precursor was supplied for five cycles and an Al-containing precursor was supplied for one cycle. In this way, a composite oxide layer (Ti-Al-O) in which TiO2 and Al2O3 were mixed in a molar ratio of 5:1 was formed. x The number of cycles (number of sets) was adjusted appropriately to set the thickness T2 of the second dielectric layer to the values ​​shown in Table 1. In this way, an anode foil was obtained, which was then cut to a predetermined size.

[0076] The thicknesses T1 and T2 of the first and second dielectric layers shown in Table 1 were determined by the methods described above.

[0077] (Creating cathode foil) An Al foil with a thickness of 50 μm was subjected to etching treatment to roughen the surface of the Al foil to obtain a cathode foil, which was then cut to a predetermined size.

[0078] (Production of wound body) An anode lead tab and a cathode lead tab were connected to the anode foil and the cathode foil, and the anode foil and the cathode foil were wound with the lead tabs interposed between them, with a separator interposed between them. An anode lead wire and a cathode lead wire were connected to the ends of the lead tabs protruding from the wound body, respectively.

[0079] The wound body was then subjected to a chemical conversion treatment to form a chemical conversion film (dielectric layer) on the cut end of the anode foil. The chemical conversion treatment was performed using an ammonium adipate solution (concentration 7% by mass, temperature 70°C) as the chemical conversion solution at a chemical conversion voltage Vf of 8.5 V. Next, the end of the outer surface of the wound body was fixed with a stop tape.

[0080] (Preparation of Conductive Polymer Dispersion) A mixed solution was prepared by dissolving 3,4-ethylenedioxythiophene and polystyrene sulfonic acid as a dopant in ion-exchanged water. Iron (III) sulfate (oxidant) dissolved in ion-exchanged water was added to the resulting mixed solution while stirring, and a polymerization reaction was carried out. After the reaction, the resulting reaction solution was dialyzed to remove unreacted monomers and excess oxidant, yielding a conductive polymer dispersion containing polyethylenedioxythiophene doped with approximately 5% by mass of polystyrene sulfonic acid.

[0081] (Formation of solid electrolyte layer) The wound body was immersed in a conductive polymer dispersion liquid contained in a designated container in a reduced pressure atmosphere (40 kPa) for 5 minutes, and then removed from the conductive polymer dispersion liquid. Next, the wound body impregnated with the conductive polymer dispersion liquid was dried in a drying oven at 150°C for 20 minutes, forming a solid electrolyte layer containing a conductive polymer between the anode foil and the cathode foil. In this way, a capacitor element was obtained.

[0082] (Sealing of capacitor elements) The capacitor element was housed in a bottomed case and sealed with a sealing member and a base plate to complete the electrolytic capacitor. Subsequently, an aging treatment was performed at 130°C for 2 hours while applying the rated voltage. Note that A1 to A3 in Table 1 are the electrolytic capacitors of Examples 1 to 3, respectively. X7 in Table 1 is the electrolytic capacitor of Comparative Example 7.

[0083] Examples 4 and 5, Comparative Example 8 (Formation of the first dielectric layer) A first dielectric layer (first metal oxide layer) was formed on the surface of the anode body by the ALD method (temperature: 150 °C, precursor: precursor containing Al, oxidizer: HO, pressure: 1 Pa). Trimethylaluminum was used as the precursor containing Al, and Al oxide (AlO) was used as the first dielectric layer. x The number of cycles was adjusted appropriately to give the thickness T1 of the first dielectric layer the value shown in Table 1.

[0084] (Formation of second dielectric layer) A second dielectric layer (a layer of a second metal oxide) was formed on the surface of the first dielectric layer by the ALD method (temperature: 150°C, precursor: Ti-containing precursor and Al-containing precursor, oxidant: HO, pressure: 1 Pa).

[0085] Tetrakis(dimethylamino)titanium(IV) was used as the Ti-containing precursor, and trimethylaluminum was used as the Al-containing precursor. Six cycles constitute one set, and in each set, a Ti-containing precursor was supplied for five cycles and an Al-containing precursor was supplied for one cycle. In this way, a composite oxide layer (Ti-Al-O) in which TiO2 and Al2O3 were mixed in a molar ratio of 5:1 was formed. x The number of cycles (number of sets) was adjusted appropriately to set the thickness T2 of the second dielectric layer to the values ​​shown in Table 1.

[0086] Except for the above, electrolytic capacitors B1 and B2 of Examples 4 and 5 and electrolytic capacitor X8 of Comparative Example 8 were produced in the same manner as electrolytic capacitor A1 of Example 1.

[0087] Comparative Example 1 The second dielectric layer was formed on the surface of the anode body without forming the first dielectric layer. The second dielectric layer was formed by the ALD method (temperature: 150 °C, precursor: tetrakis(dimethylamino)titanium(IV), oxidant: HO, pressure: 1 Pa). The second dielectric layer was formed using Ti oxide (TiO x The number of cycles was adjusted appropriately to give the thickness of the second dielectric layer shown in Table 1. Except for the above, electrolytic capacitor X1 was produced in the same manner as electrolytic capacitor A1 of Example 1.

[0088] Comparative Example 2 The second dielectric layer was formed on the surface of the anode body without forming the first dielectric layer, and the number of cycles was appropriately adjusted to obtain the thickness of the second dielectric layer shown in Table 1. Except for the above, electrolytic capacitor X2 was produced in the same manner as electrolytic capacitor A1 of Example 1.

[0089] Comparative Example 3 (Formation of second dielectric layer) A second dielectric layer was formed on the surface of the anode body by the ALD method (temperature: 150° C., precursors: precursor containing Ti and precursor containing Al, oxidizing agent: H 2 O, pressure: 1 Pa).

[0090] Tetrakis(dimethylamino)titanium(IV) was used as the Ti-containing precursor, and trimethylaluminum was used as the Al-containing precursor. One set consisted of 12 cycles, with 11 cycles per set supplying the Ti-containing precursor and 1 cycle supplying the Al-containing precursor. In this way, a composite oxide layer (Ti-Al-O) was formed, in which TiO2 and Al2O3 were mixed in a molar ratio of 11:1. x The number of cycles (number of sets) was adjusted appropriately to set the thickness T2 of the second dielectric layer to the values ​​shown in Table 1.

[0091] (Formation of the first dielectric layer) A chemical conversion treatment is performed on the anode body having the second dielectric layer on the surface, and a chemical conversion coating (AlO x The chemical conversion solution used was an ammonium adipate solution (concentration 7% by mass, temperature 70°C). The chemical conversion voltage Vf was adjusted appropriately to obtain the thickness T1 of the first dielectric layer (chemical conversion film) shown in Table 1.

[0092] Except for the above, electrolytic capacitor X3 of Comparative Example 3 was produced in the same manner as electrolytic capacitor A1 of Example 1.

[0093] Comparative Example 4 (Formation of second dielectric layer) A second dielectric layer was formed on the surface of the anode body by the ALD method (temperature: 150° C., precursors: precursor containing Ti and precursor containing Al, oxidizing agent: H 2 O, pressure: 1 Pa).

[0094] Tetrakis(dimethylamino)titanium(IV) was used as the Ti-containing precursor, and trimethylaluminum was used as the Al-containing precursor. Six cycles constitute one set, and in each set, a Ti-containing precursor was supplied for five cycles and an Al-containing precursor was supplied for one cycle. In this way, a composite oxide layer (Ti-Al-O) in which TiO2 and Al2O3 were mixed in a molar ratio of 5:1 was formed. xThe number of cycles (number of sets) was adjusted appropriately to set the thickness T2 of the second dielectric layer to the values ​​shown in Table 1.

[0095] (Formation of the first dielectric layer) The anode body having the second dielectric layer on its surface was subjected to chemical conversion treatment to form a chemical conversion coating (AlOx) layer as the first dielectric layer between the anode body and the second dielectric layer. The chemical conversion solution used was an ammonium adipate solution (concentration 7 mass%, temperature 70°C). The chemical conversion voltage Vf was appropriately adjusted to obtain the thickness T1 of the first dielectric layer (chemical conversion coating) shown in Table 1.

[0096] Except for the above, electrolytic capacitor X4 of Comparative Example 4 was produced in the same manner as electrolytic capacitor A1 of Example 1.

[0097] Comparative Example 5 (Formation of the first dielectric layer) A first dielectric layer was formed on the surface of the anode body by the ALD method (temperature: 150° C., precursors: precursor containing Ti and precursor containing Al, oxidizing agent: H 2 O, pressure: 1 Pa).

[0098] Tetrakis(dimethylamino)titanium(IV) was used as the Ti-containing precursor, and trimethylaluminum was used as the Al-containing precursor. Six cycles constitute one set, and in each set, a Ti-containing precursor was supplied for five cycles and an Al-containing precursor was supplied for one cycle. In this way, a composite oxide layer (Ti-Al-O) in which TiO2 and Al2O3 were mixed in a molar ratio of 5:1 was formed. x The number of cycles (number of sets) was adjusted appropriately to set the thickness T1 of the first dielectric layer to the values ​​shown in Table 1.

[0099] (Formation of second dielectric layer) A second dielectric layer of silicon oxide (SiO ) was formed on the surface of the first dielectric layer by the ALD method (temperature: 150°C, precursor: precursor containing Si, oxidizer: O , pressure: 1 Pa). x) layer was formed. Tridimethylaminosilane was used as the Si-containing precursor. The number of cycles was adjusted appropriately to obtain the thickness T2 of the second dielectric layer shown in Table 1.

[0100] Except for the above, electrolytic capacitor X5 of Comparative Example 5 was produced in the same manner as electrolytic capacitor A1 of Example 1.

[0101] Comparative Example 6 The anode body is subjected to chemical conversion treatment, and a chemical conversion coating (AlO x The chemical conversion treatment was performed by immersing the anode body in an ammonium adipate solution and applying a chemical conversion voltage Vf to the anode body. The chemical conversion voltage Vf was adjusted appropriately to obtain the thickness T1 of the first dielectric layer (chemical conversion coating) shown in Table 1. Thereafter, the second dielectric layer was not formed.

[0102] Except for the above, electrolytic capacitor X6 of Comparative Example 6 was produced in the same manner as electrolytic capacitor A1 of Example 1.

[0103] [evaluation] The breakdown voltage, capacitance, and leakage current of each electrolytic capacitor in the examples and comparative examples were measured in an environment of 20°C. Specifically, a voltage was applied while increasing at a rate of 1.0 V / sec, and the breakdown voltage at which an overcurrent of 0.5 A flowed was measured. The capacitance was measured at a frequency of 120 Hz using a four-terminal LCR meter. The current flowing through the electrolytic capacitor after holding it at the rated voltage for 40 seconds was measured, and this current value was taken as the leakage current.

[0104] The capacitance was expressed as an index (capacitance index C) with the capacitance of electrolytic capacitor X6 of Comparative Example 6 set to 100. The breakdown withstand voltage was expressed as an index (voltage withstand index V) with the breakdown withstand voltage of electrolytic capacitor X6 of Comparative Example 6 set to 100. The leakage current was expressed as an index (LC index) with the leakage current of electrolytic capacitor X6 of Comparative Example 6 set to 100.

[0105] The evaluation results are shown in Table 1. Table 1 also shows the CV value. The CV value is the capacitance multiplied by the breakdown voltage, and indicates the amount of electricity that can be stored in the electrolytic capacitor. The CV value is expressed as an index (CV index) with the CV value of electrolytic capacitor X6 of Comparative Example 6 set to 100.

[0106] [Table 1]

[0107] Electrolytic capacitors A1 to A3 and B1 to B2 were able to increase capacitance while suppressing an increase in LC, achieving both high capacitance and low LC simultaneously. Electrolytic capacitors A1 to A3 and B1 to B2 also suppressed a decrease in the withstand voltage index V. Electrolytic capacitors X1 to X8 were unable to achieve both high capacitance and low LC simultaneously.

[0108] In electrolytic capacitors X1 and X2, the first dielectric layer was not formed, and therefore the chemical conversion treatment performed on the wound body reduced the insulating properties of the second dielectric layer, increased the LC index, and reduced the voltage resistance index V.

[0109] In electrolytic capacitors X3 and X4, the first dielectric layer was formed by chemical conversion treatment after the formation of the second dielectric layer, so the first dielectric layer did not function as a suppression layer, and the chemical conversion treatment performed to form the first dielectric layer reduced the insulating properties of the second dielectric layer, increasing the LC index and decreasing the voltage resistance index V. In electrolytic capacitor X3, the Ti / Al molar ratio in the second dielectric layer was larger than in electrolytic capacitor X4, further increasing the LC index.

[0110] In electrolytic capacitor X5, the second metal oxide layer was formed as the first dielectric layer, and the first metal oxide layer was formed as the second dielectric layer. Therefore, no suppression layer was present between the second metal oxide layer and the anode body. As a result, the chemical conversion treatment performed on the wound body reduced the insulating properties of the second metal oxide layer, increased the LC index, and reduced the voltage resistance index V.

[0111] In electrolytic capacitor X6, the dielectric layer was composed of only the first dielectric layer, resulting in a reduced capacitance index C. In electrolytic capacitors X7 and X8, T1 / T2 was greater than 1, resulting in a reduced capacitance index C. [Industrial Applicability]

[0112] The electrode foil for electrolytic capacitors according to the present disclosure is suitable for use in electrolytic capacitors that require large capacitance and low LC.

[0113] While the present invention has been described in terms of presently preferred embodiments, such disclosure is not to be interpreted as limiting. Various changes and modifications will no doubt become apparent to those skilled in the art to which the present invention pertains upon reading the above disclosure. It is therefore intended that the appended claims be interpreted to cover all changes and modifications that do not depart from the true spirit and scope of the invention. [Explanation of symbols]

[0114] 10: anode foil, 110: anode body, 111: core, 112: porous portion, 120: dielectric layer, 121: first dielectric layer, 122: second dielectric layer, P: pit, 20: cathode foil, 30: separator, 40: stop tape, 60A, 60B: lead wire, 50A, 50B: lead tab, 100: wound body, 200: wound electrolytic capacitor, 211: bottomed case, 212: sealing member, 213: seat plate, 400: laminated electrolytic capacitor, 402: capacitor element, 403: exterior body, 404: anode lead terminal, 405: cathode lead terminal, 406a: cathode forming portion, 406b: anode lead portion, 407: dielectric layer, 408: cathode portion, 409: solid electrolyte layer, 410: cathode lead layer, 411: carbon layer, 412: silver paste layer, 413: separation layer, 414: adhesive layer, 460: anode foil

Claims

1. an anode body including a valve metal; a first dielectric layer covering at least a portion of the anode body; a second dielectric layer covering at least a portion of the first dielectric layer; the second dielectric layer has a higher dielectric constant than the first dielectric layer; a thickness T2 of the second dielectric layer is greater than a thickness T1 of the first dielectric layer; the first dielectric layer is a layer that suppresses oxygen diffusion from the second dielectric layer to the anode body, the first dielectric layer comprises a first metal oxide; the second dielectric layer includes a second metal oxide having a higher dielectric constant than the first metal oxide; the first metal oxide contains silicon as a first metal; a ratio of a thickness T1 of the first dielectric layer to a thickness T2 of the second dielectric layer: T1 / T2 is 0.45 or less; Electrode foil for electrolytic capacitors.

2. 2. The electrode foil for an electrolytic capacitor according to claim 1, wherein the second metal oxide contains at least one second metal selected from the group consisting of tantalum, titanium, zirconium, niobium, and hafnium.

3. 3. The electrode foil for an electrolytic capacitor according to claim 2, wherein the second metal oxide contains the second metal and at least one selected from the group consisting of silicon and aluminum.

4. 4. The electrode foil for an electrolytic capacitor according to claim 1, wherein the first metal oxide further contains aluminum as the first metal.

5. 4. The electrode foil for an electrolytic capacitor according to claim 1, wherein the first dielectric layer has a thickness T1 of 0.3 nm or more.

6. The electrode foil for an electrolytic capacitor according to any one of claims 1 to 3, a cathode portion covering at least a portion of the second dielectric layer.

7. The electrolytic capacitor according to claim 6 , wherein the cathode portion includes an electrolyte.

8. The electrolytic capacitor according to claim 6 , wherein the cathode portion includes a solid electrolyte.

9. a first step of preparing an anode body including a valve metal; a second step of forming a first dielectric layer covering at least a portion of the anode body; a third step of forming a second dielectric layer covering at least a portion of the first dielectric layer after the second step; Including, the second dielectric layer has a higher dielectric constant than the first dielectric layer; a thickness T2 of the second dielectric layer is greater than a thickness T1 of the first dielectric layer; the first dielectric layer is a layer that suppresses oxygen diffusion from the second dielectric layer to the anode body, the first dielectric layer comprises a first metal oxide; the second dielectric layer includes a second metal oxide having a higher dielectric constant than the first metal oxide; the first metal oxide contains silicon as a first metal; a ratio of a thickness T1 of the first dielectric layer to a thickness T2 of the second dielectric layer: T1 / T2 is 0.45 or less; A manufacturing method for electrode foil for electrolytic capacitors.

10. 10. The method for producing an electrode foil for an electrolytic capacitor according to claim 9, wherein in the second step, the first dielectric layer is formed by atomic layer deposition or chemical conversion treatment.

11. 11. The method for producing an electrode foil for an electrolytic capacitor according to claim 9, wherein in the third step, the second dielectric layer is formed by atomic layer deposition.

12. 11. The method for producing an electrode foil for an electrolytic capacitor according to claim 9, wherein the second metal oxide contains at least one second metal selected from the group consisting of tantalum, titanium, zirconium, niobium, and hafnium.

13. 13. The method for producing an electrode foil for an electrolytic capacitor according to claim 12, wherein the second metal oxide contains the second metal and at least one selected from the group consisting of silicon and aluminum.

14. 11. The method for producing an electrode foil for an electrolytic capacitor according to claim 9, wherein the first metal oxide further contains aluminum as the first metal.

15. 11. The method for producing an electrode foil for an electrolytic capacitor according to claim 9, wherein the first dielectric layer has a thickness T1 of 0.3 nm or more.

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