Real-time impedance matching method for radiofrequency therapy devices.

Abstract

The present invention relates to a real-time impedance matching method for a high-frequency treatment device, and is characterized in that it includes a reference impedance setting step of fixing the inductance of a first variable inductor unit for measuring the impedance in the high-frequency treatment device and a second variable inductor unit for measuring the impedance in the body of a patient to a predetermined inductance, respectively; a minimum impedance search step of applying a search voltage lower than a treatment voltage and changing the inductance of the first variable inductor unit and the second variable inductor unit to search for a minimum impedance; a reflected wave measuring step of measuring at least two reflected waves under conditions of varying the inductance of the first variable inductor unit and the inductance of the second variable inductor unit; a reflected wave minimum value search step of comparing the measured reflected waves with each other to search for a reflected wave having a minimum value; an inductance confirmation step of confirming the inductance of the first variable inductor unit and the inductance of the second variable inductor unit that satisfy the reflected wave minimum value; and a high-frequency application step of operating the high-frequency treatment device with a treatment voltage under the conditions of the inductance of the first variable inductor unit and the inductance of the second variable inductor unit confirmed in the inductance confirmation step to apply high frequency to the skin of the patient.

Description

[Technical Field]

[0001] The present invention relates to a real-time impedance matching method for a high-frequency treatment device, and more particularly to a real-time impedance matching method for a high-frequency treatment device that can match the impedance within the high-frequency treatment device with the impedance within the body of a patient during treatment using high frequency. [Background technology]

[0002] Human skin tissue consists of the stratum corneum, epidermis, dermis, and hypodermis, and its functions deteriorate due to aging and the effects of ultraviolet rays.

[0003] The epidermis is the outermost layer of the skin and is composed of multiple layers, such as the stratum corneum, stratum lucidum, stratum granulosum, stratum spinosum, and stratum basale, depending on their location and function, and is responsible for functions such as protection, defense, and secretion.

[0004] The dermis layer is located below the epidermis layer adjacent to the basal layer and makes up the majority of the skin. It is composed of the papillary layer, which contains a jelly-like substance containing water, proteins, carbohydrates, mucopolysaccharides, minerals, and inorganic salts, and which contains capillaries related to blood circulation and lymphatic vessels that transport lymph, and the reticular layer, which contains collagen, which is a collagen fiber related to skin wrinkles, elastin, which is an elastic fiber that gives skin elasticity, and the stroma (a water reservoir).

[0005] The subcutaneous fat layer is located between the dermis, muscles, and bones and contains a large amount of fat. It constitutes the lowest layer of the skin and is spread evenly throughout the body. It maintains elasticity and acts as a buffer to absorb external pressure and shock, preventing internal damage. It also plays a role in preventing heat loss and maintaining body temperature.

[0006] Meanwhile, as interest in skin grows, various skin care devices related to skin care have been developed, and many skin care clinics and skin care businesses have been established.

[0007] The most widely known skin treatment method today is to apply radio frequency (RF) to the skin to cause localized thermal damage within the skin, creating micro-injuries that promote skin regeneration from the epidermis to the dermis, and the micro-injuries induce cell growth factors, maximizing the skin's natural healing and regeneration.

[0008] High frequency treatment devices are primarily used to generate fat loss through apoptosis by heating subcutaneous fat with electromagnetic energy using radio frequency (RF) to irreversibly denature the subcutaneous fat.

[0009] However, skin impedance varies from person to person, and even for the same person, it varies depending on the location and condition of the skin. Therefore, when the impedance of a high-frequency treatment device changes, the high-frequency power delivered to the skin also fluctuates proportionally, making it difficult to expect consistent power delivery. Furthermore, in areas with low impedance, the current delivered to the skin increases, and the rate at which heat generated from deep within the skin increases is high, making burns more likely. Meanwhile, in areas with high impedance, it takes a long time to generate heat, making it difficult to achieve substantially uniform heating.

[0010] Furthermore, if there is a difference between the impedance and the impedance within the body of the patient, there is a problem that the energy transmission efficiency decreases and the high frequency output becomes unstable. Summary of the Invention [Problem to be solved by the invention]

[0011] The present invention has been proposed to solve these problems, and its purpose is to provide a real-time impedance matching method for a high-frequency treatment device that can match the impedance inside the high-frequency treatment device with the impedance inside the patient's body, thereby efficiently transmitting energy to the skin during high-frequency treatment and maintaining a stable high-frequency output. [Means for solving the problem]

[0012] The above object can be achieved by a real-time impedance matching method for a high-frequency treatment device, comprising: a reference impedance setting step of fixing the inductance of an impedance matching unit for measuring the impedance inside the high-frequency treatment device and the impedance inside the body of the treatment subject to a predetermined inductance; a minimum impedance search step of applying a search voltage lower than the treatment voltage and changing the inductance of the impedance matching unit to search for the minimum impedance; a reflected wave measurement step of measuring at least two reflected waves under conditions in which the inductance of the impedance matching unit is varied; a reflected wave minimum value search step of comparing the measured reflected waves to search for the minimum reflected wave value; an inductance confirmation step of confirming the inductance of the impedance matching unit that satisfies the minimum reflected wave value; and a high-frequency application step of operating the high-frequency treatment device at a treatment voltage under the inductance condition of the impedance matching unit confirmed in the inductance confirmation step to apply high frequency waves to the skin of the treatment subject.

[0013] According to the real-time impedance matching method for a high-frequency treatment device according to an embodiment of the present invention, when applying high-frequency waves to a new treatment position on the patient's skin after the high-frequency application step, the steps are repeated starting from the reflected wave measurement step.

[0014] According to an embodiment of the present invention, the reflected wave minimum value search step varies the inductance of the impedance matching section, searches for an inflection point of the measured reflected wave intensity, and searches for the reflected wave minimum value having the smallest reflected wave intensity among the plurality of inflection points.

[0015] According to a real-time impedance matching method for a high-frequency treatment device according to an embodiment of the present invention, when searching for a minimum value of a reflected wave at a new treatment position, the method searches for a reflected wave at the new treatment position by preferentially using an inductance value corresponding to the minimum value of the reflected wave at the previous treatment position and an inductance value adjacent to the minimum value of the reflected wave.

[0016] The impedance matching unit according to an embodiment of the present invention includes a first variable inductor unit that measures impedance within the high-frequency treatment device and a second variable inductor unit that measures impedance within the patient's body, The inductance of the first variable inductor section is the same as the inductance of the second variable inductor section.

[0017] The first variable inductor section and the second variable inductor section are characterized in that at least two unit inductors, each of which has an inductor and a switch connected in parallel, are connected in series.

[0018] The plurality of inductors constituting the unit inductor are characterized by having proportionality constants different from one another. [Effects of the Invention]

[0019] The real-time impedance matching method for a high-frequency treatment device according to the present invention having the above-described configuration can be expected to have the effect of matching the impedance inside the high-frequency treatment device with the impedance inside the patient's body, efficiently transmitting energy to the skin when high-frequency is applied, minimizing power consumption, and performing treatment efficiently.

[0020] Furthermore, the temperature of the subcutaneous fat can be heated uniformly and constantly, improving the efficiency of lipolysis, and preventing burns due to temperature changes, thereby improving safety during treatment. [Brief explanation of the drawings]

[0021] [Figure 1] 1 is a block diagram showing an apparatus for impedance matching of a high frequency treatment device according to the present invention; [Figure 2] 1 is a circuit diagram showing an equivalent circuit of an impedance matching device of a high-frequency treatment device according to an embodiment of the present invention. [Figure 3]3 is a flowchart illustrating an embodiment of an impedance matching method for a high-frequency treatment device according to the present invention. [Figure 4] 1 is a conceptual diagram illustrating a method for matching impedance by changing a treatment site according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0022] In the drawings, like reference numbers refer to the same or similar functionality across various aspects.

[0023] Hereinafter, with reference to the drawings, specific details for implementing the present invention will be described based on embodiments, and these embodiments will be described in sufficient detail to enable those skilled in the art to implement the present invention.

[0024] It should be understood that the various embodiments of the present invention, although different from one another, are not necessarily mutually exclusive. For example, a particular shape, structure, and characteristic described herein in connection with one embodiment may be implemented in other embodiments without departing from the spirit and scope of the invention.

[0025] Accordingly, the following detailed description is not intended to be taken in a limiting sense, and the scope of the present invention is limited only by the appended claims, along with the full scope of equivalents to which such claims are entitled when properly interpreted.

[0026] The high-frequency treatment device according to the present invention includes a handpiece that is placed in contact with the skin of a patient or spaced apart from the skin and emits high-frequency waves to a treatment target area of ​​the patient, and a main body that is connected to the handpiece and controls the operation of the handpiece. The main body includes a display means and a control means that control the operation of the handpiece and allow the operating status to be confirmed. The handpiece is connected to the main body via a flexible cable.

[0027] The handpiece includes a radio frequency (RF) electrode that generates radio frequency (RF) waves. The RF electrode generates radio frequency (RF) waves on the skin of the patient. In this embodiment of the present invention, the RF electrode is limited to a monopolar type and is composed of a main electrode adjacent to or in contact with the treatment area and a ground electrode (plate) adjacent to the main electrode and spaced a predetermined distance apart, and an electric field is formed between the two electrodes.

[0028] After positioning the treatment target area of ​​the patient between two high-frequency electrodes (main electrode and ground electrode), impedance matching is performed by generating high-frequency waves at the minimum power possible for impedance matching, which is lower than the power used in actual treatment.

[0029] 1 and 2, an impedance matching device 100 according to an embodiment of the present invention is a predetermined RF circuit that is installed in the main body or handpiece and matches the impedance of the high-frequency electrode of the handpiece with the impedance of the patient. In this embodiment, the description will be given based on the case where the device is installed in the handpiece, but the present invention is not limited to this.

[0030] The impedance matching device 100 of the high-frequency treatment device according to the present invention is provided with an impedance matching unit 110 capable of changing the inductance and for measuring the impedance within the high-frequency treatment device. The impedance matching unit 110 includes a first variable inductor unit 111 and a second variable inductor unit 112.

[0031] The first variable inductor unit 111 and the second variable inductor unit 112 can change inductance. Specifically, the first variable inductor unit 111 is used to measure impedance within the high-frequency treatment device, and the second variable inductor unit 112 is used to measure impedance within the body of a patient. The first variable inductor unit 111 is electrically connected to the second variable inductor unit 112 via the patient's skin, and the impedance within the body of the patient can be measured via the second variable inductor unit 112.

[0032] According to an embodiment of the present invention, the first variable inductor unit 111 and the second variable inductor unit 112 are each configured with a unit inductor in which an inductor having a predetermined inductance and a switch are connected in parallel, and at least two of the unit inductors are connected in series. The switch is opened or shorted under the control of the control unit 120, thereby changing the overall inductance of the first variable inductor unit 111 and the second variable inductor unit 112. However, the present invention is not limited to this, and variable inductors can be realized using various methods, such as a combination of an inductor and a capacitor that can change the inductance, a combination with a variable resistor, or changing the inductance by physical control.

[0033] The inductors constituting the unit inductor have different proportionality constants so that they have different inductances. For example, if one inductor is 1.0L, the other inductors are 0.5L, 0.33L, etc.

[0034] According to an embodiment of the present invention, the first variable inductor section 111 and the second variable inductor section 112 are each configured with four unit inductors, as an example. That is, they are configured with four inductors and their respective switches, but the present invention is not limited to this, and it is preferable that at least two or more unit inductors are provided. Furthermore, it is preferable to combine inductors having different inductances to form a combination of inductors that can derive an optimal inductance for measuring body impedance.

[0035] By changing the inductance of the first variable inductor unit 111 and the second variable inductor unit 112, the control unit 120 matches the impedance within the high-frequency treatment device with the impedance within the patient's body through the reflected wave result value measured by the reflected wave measuring unit 130.

[0036] The control unit 120 controls the change in inductance of the first variable inductor unit 111 and the second variable inductor unit 112, and feedback controls the change in inductance of the first variable inductor unit 111 and the second variable inductor unit 112 based on the reflected wave intensity measured by the reflected wave measuring unit 130.

[0037] The reflected wave measuring unit 130 is a VSWR (Voltage Standing Wave Ratio) meter, and measures the reflection value while changing the inductance of the first variable inductor unit 111 or the second variable inductor unit 112.

[0038] The resonator 140 is an LC resonator circuit in which an inductor having a specific inductance component and a capacitor having a specific capacitance component are connected in series or in parallel. In the embodiment of the present invention, this corresponds to an LC resonator circuit in which an inductor and a capacitor are connected in series.

[0039] The directional coupler 150 has the resonator 140 as an input port, a main output port connected to the impedance matching section 110, and an auxiliary output port connected to the reflected wave measuring section .

[0040] Hereinafter, the method in which the control unit 120 controls the inductance of the first variable inductor unit 111 and the second variable inductor unit 112 to match the impedance in the skin of the patient with the impedance in the high-frequency treatment device will be described in detail with reference to Figures 3 and 4.

[0041] The real-time impedance matching method using an impedance matching device for a high-frequency treatment device includes a reference impedance setting step (S100) of fixing the inductance of the impedance matching unit 110, which is used to measure the impedance inside the high-frequency treatment device 100 and the impedance inside the body 200 of the treatment recipient, to a predetermined inductance; a minimum impedance search step (S200) of applying a search voltage lower than the treatment voltage and changing the inductance of the impedance matching unit 110 to search for the minimum impedance; a reflected wave measurement step (S300) of measuring at least two reflected waves under conditions where the inductance of the impedance matching unit 110 is varied; a reflected wave minimum value search step (S400) of comparing the measured reflected waves to search for the minimum reflected wave value; an inductance confirmation step (S500) of confirming the inductance of the impedance matching unit 110 that satisfies the minimum reflected wave value; and a high-frequency application step (S600) of operating the high-frequency treatment device 100 at a treatment voltage under the inductance condition of the impedance matching unit 110 confirmed in the inductance confirmation step to apply high frequency waves to the skin of the treatment recipient.

[0042] Before the reference impedance setting step (S100), a preparation step may be further provided in which the treatment target area of ​​the patient is positioned between the high-frequency electrodes, and then high-frequency waves are generated at the minimum power that allows impedance matching, which is lower than the power used in actual treatment.

[0043] In the reflected wave minimum value search step (S400), an inflection point of the measured reflected wave intensity is searched for by varying the inductance of the first variable inductor section 111 and the second variable inductor section 112. If multiple inflection points are searched for, the reflected wave minimum value having the smallest reflected wave intensity is searched for among the multiple inflection points.

[0044] On the other hand, if high frequency waves are applied to a certain location and treatment is completed, and high frequency waves are to be applied to a new treatment location, the reference impedance setting step (S100) and the minimum impedance setting step (S200) are omitted, and the process is repeated from the reflected wave measurement step (S300).

[0045] In this case, when searching for the minimum value of the reflected wave at a new treatment position, the inductance corresponding to the minimum value of the reflected wave at the previous treatment position and the inductance value adjacent to the minimum value of the reflected wave are used preferentially to search for the reflected wave.

[0046] The process of searching for the minimum value of the reflected wave and searching for the minimum value of the reflected wave at a new treatment position will be described with reference to Figure 4. First, the first reflected wave is measured (n times) using a predetermined initial inductance. Using this as a reference, the inductance is changed and the reflected wave is measured (n+1 times, n+2 times). Since the reflected wave is smaller at the n+2 time point than at the initial n time point, the inductance is changed again using the n+2 time point as a reference and the reflected wave is measured (n+3 times). At this time, the reflected wave is measured to be larger again at the n+3 time point, so the inflection point can be considered to be between the n+3 time point and the n time point, and this process is repeated to search for the minimum value of the reflected wave. In this embodiment of the present invention, it is assumed that the reflected wave measured at the n+2 time point is close to the minimum value.

[0047] After applying high frequency and completing the treatment, if the device is moved to a new treatment site adjacent to the previous treatment site, the device will prioritize searching for the minimum reflected wave value at the new treatment site using the reflected wave and inductance values ​​at the previous treatment site. Since the impedance difference is likely to be small when the treatment site is adjacent, the device will prioritize searching for the minimum reflected wave value using the inductance combination that produced the minimum reflected wave value at the previous position. Using the inductance conditions (n+2 times) under which the minimum reflected wave value was measured at the previous treatment site, the device measures the reflected wave at the new treatment site (n+2 times → m times). Then, using the inductance conditions closest to the minimum value, the device measures the reflected wave at the new treatment site (n times → m+1 times), (n+3 times → m+2 times). If the minimum reflected wave value is not found during this process, the device will search for the minimum reflected wave value while changing the inductance.

[0048] The present invention has been described above using specific details such as specific components, limited embodiments, and drawings. However, these are merely provided to facilitate a more general understanding of the present invention, and the present invention is not limited to the above-described embodiments. Those skilled in the art will appreciate that various modifications and variations can be made from such descriptions.

[0049] Therefore, the spirit of the present invention should not be limited to the described embodiments, but should be considered to include not only the scope of the claims described below, but also all that are equivalent to or have equivalent variations within the scope of these claims, within the scope of the spirit of the present invention.

Claims

1. A high-frequency treatment device comprising a high-frequency emitting unit that emits high-frequency waves to a treatment target area of ​​a patient, and an impedance matching device that performs real-time impedance matching, The impedance matching device is An impedance matching unit is provided for measuring the impedance in the high-frequency treatment device and the impedance in the body of the patient, The impedance matching device is a reference impedance setting step of fixing the inductance of the impedance matching unit to a predetermined inductance; a minimum impedance search step of applying a search voltage lower than the treatment voltage and changing the inductance of the impedance matching unit to search for a minimum impedance; a reflected wave measuring step of measuring at least two or more reflected waves under a condition in which the inductance of the impedance matching unit is varied; a reflected wave minimum value searching step of comparing the measured reflected waves to search for a reflected wave minimum value; an inductance confirmation step of confirming the inductance of the impedance matching unit that satisfies the minimum value of the reflected wave; The high frequency emitting portion is A high-frequency treatment device characterized by performing a high-frequency application step of operating with a treatment voltage under the inductance condition of the impedance matching unit confirmed in the inductance confirmation step and applying high-frequency waves to the skin of the treatment subject.

2. A high-frequency treatment device as described in claim 1, characterized in that when the high-frequency emission unit attempts to apply high-frequency waves to a new treatment location on the patient's skin after the high-frequency application step, the impedance matching device repeats the steps from the reflected wave measurement step.

3. The reflected wave minimum value searching step includes:

3. The high-frequency treatment device according to claim 2, wherein the inductance of the impedance matching unit is varied to search for an inflection point of the measured reflected wave intensity, and the reflected wave minimum value having the smallest reflected wave intensity is searched for among the plurality of inflection points.

4. The impedance matching device is 4. The high-frequency treatment device according to claim 3, wherein when searching for a minimum value of the reflected wave at a new treatment position, the device searches for the reflected wave at the new treatment position by preferentially using the inductance corresponding to the minimum value of the reflected wave at the previous treatment position and the inductance value adjacent to the minimum value of the reflected wave.

5. The impedance matching unit is a first variable inductor unit for measuring impedance within the high-frequency treatment device, and a second variable inductor unit for measuring impedance within the body of the patient; 2. The high-frequency treatment device according to claim 1, wherein the inductance of the first variable inductor section is the same as the inductance of the second variable inductor section.

6. The high-frequency treatment device according to claim 5, wherein the first variable inductor section and the second variable inductor section are configured by connecting at least two unit inductors in series, each unit inductor having an inductor and a switch connected in parallel.

7. 7. The high-frequency treatment device according to claim 6, wherein the plurality of inductors constituting the unit inductor have proportionality constants different from each other.

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