Substrate Processing Equipment

Abstract

To provide a technology that can improve the removal efficiency of objects to be removed in liquid processing.SOLUTION: A substrate processing apparatus according to the present disclosure has a fluid supply unit, a processing fluid supply unit, and a nozzle. The fluid supply unit supplies a fluid containing pressurized pure water vapor or mist. The processing fluid supply unit supplies a processing fluid containing at least sulfuric acid. The nozzle has a first discharge port, a second discharge port, and an outlet channel. The first discharge port discharges the fluid supplied from the fluid supply unit. The second discharge port discharges the processing fluid supplied from the processing fluid supply unit. The outlet channel is connected to the first and second discharge ports and conducts out a mixed fluid from the fluid discharged from the first discharge port and the processing fluid discharged from the second discharge port. The cross-sectional area of the outlet channel is larger than the cross-sectional area of the first discharge port.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus. [Background technology]

[0002] 2. Description of the Related Art In a semiconductor device manufacturing process, a technique is known in which a target material, such as a resist film, is removed from a substrate, such as a semiconductor wafer, by supplying a processing liquid to the substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2014-027245 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique that can improve the efficiency of removing a target substance in a liquid treatment. [Means for solving the problem]

[0005] A substrate processing apparatus according to one aspect of the present disclosure includes a substrate holding unit, a fluid supply unit, a processing liquid supply unit, and a nozzle. The substrate holding unit rotatably holds a substrate. The fluid supply unit supplies a fluid containing pressurized pure water vapor or mist. The processing liquid supply unit supplies a processing liquid containing at least sulfuric acid. The nozzle is connected to the fluid supply unit and the processing liquid supply unit and mixes the fluid and the processing liquid and discharges the mixture onto the substrate. The nozzle also includes a first outlet, a second outlet, and a discharge path. The first outlet discharges the fluid supplied from the fluid supply unit. The second outlet discharges the processing liquid supplied from the processing liquid supply unit. The discharge path is connected to the first outlet and the second outlet and discharges a mixed fluid of the fluid discharged from the first outlet and the processing liquid discharged from the second outlet. The cross-sectional area of ​​the discharge path is larger than the cross-sectional area of ​​the first outlet. [Effects of the Invention]

[0006] According to the present disclosure, it is possible to improve the efficiency of removing a target substance in a liquid treatment. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a schematic plan view of a substrate processing apparatus according to a first embodiment. [Figure 2] FIG. 2 is a schematic side view of the substrate processing apparatus according to the first embodiment. [Figure 3] FIG. 3 is a cross-sectional view of the nozzle according to the first embodiment taken along a plane perpendicular to the longitudinal direction. [Figure 4] 4 is a cross-sectional view taken along the line IV-IV in FIG. [Figure 5] 5 is a cross-sectional view taken along the line VV in FIG. [Figure 6] FIG. 6 is a view of the nozzle according to the first embodiment as seen from below. [Figure 7] FIG. 7 is a cross-sectional view of the nozzle cleaning mechanism according to the first embodiment, taken along a plane perpendicular to the longitudinal direction. [Figure 8] FIG. 8 is an explanatory diagram of the operation of the nozzle cleaning process according to the first embodiment. [Figure 9] FIG. 9 is an explanatory diagram of the operation of the nozzle cleaning process according to the first embodiment. [Figure 10] FIG. 10 is an explanatory diagram of the operation of the nozzle cleaning process according to the first embodiment. [Figure 11] FIG. 11 is a flowchart showing the procedure of the process executed by the substrate processing apparatus according to the first embodiment. [Figure 12] FIG. 12 is a cross-sectional view of the nozzle according to the second embodiment taken along a plane perpendicular to the longitudinal direction. [Figure 13] 13 is a cross-sectional view taken along the line XIII-XIII in FIG. [Figure 14] 14 is a cross-sectional view taken along the line XIV-XIV in FIG. [Figure 15]FIG. 15 is a cross-sectional view of a nozzle according to a first modified example of the first embodiment, taken along a plane perpendicular to the longitudinal direction. [Figure 16] FIG. 16 is a cross-sectional view of a nozzle according to a second modified example of the first embodiment, taken along a plane perpendicular to the longitudinal direction. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, a mode for carrying out a substrate processing apparatus according to the present disclosure (hereinafter referred to as an "embodiment") will be described in detail with reference to the drawings. Note that the present disclosure is not limited to the embodiment. Furthermore, each embodiment can be appropriately combined within a range that does not cause contradiction in processing content. Furthermore, the same components in each of the following embodiments are given the same reference numerals, and duplicated explanations will be omitted.

[0009] Furthermore, in the following embodiments, expressions such as "constant," "orthogonal," "perpendicular," or "parallel" may be used, but these expressions do not necessarily mean "constant," "orthogonal," "perpendicular," or "parallel" in the strict sense. In other words, the above expressions allow for deviations due to, for example, manufacturing precision, installation precision, etc.

[0010] In addition, for ease of understanding, the drawings referred to below may show an orthogonal coordinate system in which the X-axis, Y-axis, and Z-axis directions are defined as being orthogonal to each other, with the positive Z-axis direction being the vertically upward direction. Also, the direction of rotation around the vertical axis may be referred to as the θ direction.

[0011] In the manufacturing process of semiconductor devices, a resist film is formed in a predetermined pattern on a film to be processed that is formed on a substrate such as a semiconductor wafer, and this resist film is used as a mask to perform processes such as etching and ion implantation on the film to be processed. After processing, the unnecessary resist film is removed from the wafer.

[0012] The resist film is removed by SPM treatment, which is performed by supplying a high-temperature SPM (Sulfuric Acid Hydrogen Peroxide Mixture) liquid, which is made by mixing sulfuric acid and hydrogen peroxide, onto the resist film.

[0013] In the following embodiment, a substrate processing apparatus capable of improving the efficiency of removing objects to be removed in SPM processing will be described.

[0014] The substrate processing apparatus according to the present disclosure can be applied to liquid processes other than SPM processing. Specifically, the substrate processing apparatus according to the present disclosure can be applied to liquid processes using a processing liquid containing at least sulfuric acid.

[0015] Examples of "processing liquids containing at least sulfuric acid" other than SPM liquid include processing liquids that react (heat up or increase etchant) when mixed with sulfuric acid, specifically, dilute sulfuric acid (a mixture of sulfuric acid and water), a mixture of sulfuric acid and ozone water, etc. Furthermore, the "processing liquid containing at least sulfuric acid" may be sulfuric acid.

[0016] (First embodiment) <Configuration of the substrate processing apparatus> First, the configuration of a substrate processing apparatus according to a first embodiment will be described with reference to Figures 1 and 2. Figure 1 is a schematic plan view of the substrate processing apparatus according to the first embodiment. Figure 2 is a schematic side view of the substrate processing apparatus according to the first embodiment. Note that a second supply mechanism 105 and a nozzle cleaning mechanism 106 are omitted from Figure 2.

[0017] 1 and 2, the substrate processing apparatus 1 includes a chamber 101, a substrate holding unit 102, a cup unit 103, a first supply mechanism 104, a second supply mechanism 105, and a nozzle cleaning mechanism 106. The substrate processing apparatus 1 also includes a vapor supply unit 201, an SPM supply unit 202, a rinse liquid supply unit 203, and a replacement liquid supply unit 204. The substrate processing apparatus 1 removes a resist film formed on the surface of a substrate such as a semiconductor wafer (hereinafter referred to as a "wafer W").

[0018] SPM treatment is a well-known method for removing resist films. SPM treatment involves supplying a high-temperature SPM (Sulfuric Acid Hydrogen Peroxide Mixture) solution, which is made by mixing sulfuric acid and hydrogen peroxide, onto the resist film.

[0019] The efficiency of resist film removal can be improved by increasing the temperature of the SPM liquid. One possible method for increasing the temperature of the SPM liquid is to increase the temperature of the sulfuric acid. However, increasing the temperature of the sulfuric acid requires improving the heat resistance and pressure resistance of the piping through which the sulfuric acid flows, which places a heavy load on the hardware. Another possible approach is to change the mixing ratio of sulfuric acid and hydrogen peroxide solution, increasing the proportion of hydrogen peroxide solution. However, increasing the proportion of hydrogen peroxide solution makes it more likely to produce fumes and bumping. Another possible approach is to heat the SPM liquid on the wafer W using an infrared heater or the like, but this raises issues, such as temperature stability.

[0020] Therefore, in the substrate processing apparatus 1, steam (hereinafter referred to as "vapor") of pressurized pure water (deionized water) is mixed with the SPM liquid, thereby making it possible to preferably increase the temperature of the SPM liquid.

[0021] The chamber 101 accommodates a substrate holder 102, a cup 103, a first supply mechanism 104, and a second supply mechanism 105. An FFU (Fun Filter Unit) 111 that forms a downflow within the chamber 101 is provided on the ceiling of the chamber 101 (see FIG. 2).

[0022] The substrate holding unit 102 includes a main body 121 having a diameter larger than that of the wafer W, a plurality of gripping units 122 provided on the upper surface of the main body 121, support members 123 that support the main body 121, and a drive unit 124 that rotates the support members 123. The number of gripping units 122 is not limited to that shown in the figure.

[0023] The substrate holding part 102 holds the wafer W by gripping the peripheral edge of the wafer W using a plurality of gripping parts 122. This allows the wafer W to be held horizontally while being slightly spaced apart from the upper surface of the main body part 121. As described above, a resist film is formed on the surface (upper surface) of the wafer W.

[0024] Here, the substrate holding unit 102 that holds the peripheral portion of the wafer W using multiple holding units 122 has been given as an example, but the substrate processing apparatus 1 may be configured to include a vacuum chuck that holds the back surface of the wafer W by suction instead of the substrate holding unit 102.

[0025] The cup portion 103 is disposed so as to surround the substrate holding portion 102. A drain port 131 for discharging the processing liquid supplied to the wafer W to the outside of the chamber 101 and an exhaust port 132 for exhausting the atmosphere inside the chamber 101 are formed at the bottom of the cup portion 103.

[0026] The first supply mechanism 104 includes a nozzle 141, a first arm 142 that extends horizontally and supports the nozzle 141 from above, and a first swivel and lift mechanism 143 that swivels and raises and lowers the first arm 142. The first swivel and lift mechanism 143 enables the first arm 142 to move the nozzle 141 between a processing position above the wafer W and a standby position outside the wafer W.

[0027] The nozzle 141 is a bar nozzle that extends linearly in the horizontal direction. The nozzle 141 has a length that is approximately the same as the radius of the wafer W. When the nozzle 141 is placed at the processing position, the tip end of the nozzle 141 in the longitudinal direction is located above the center of the wafer W, and the base end of the nozzle 141 in the longitudinal direction is located above the periphery of the wafer W.

[0028] The nozzle 141 is connected to the vapor supply unit 201 via a vapor supply path 211. The nozzle 141 is also connected to the SPM supply unit 202 via an SPM supply path 221. The vapor supply unit 201 supplies vapor, which is steam of pressurized pure water (deionized water), to the nozzle 141 via the vapor supply path 211. The SPM supply unit 202 supplies SPM liquid, which is a mixed liquid of sulfuric acid and hydrogen peroxide solution, to the nozzle 141 via the SPM supply path 221. Any known technology may be used to configure the vapor supply unit 201 and the SPM supply unit 202. For example, the SPM supply unit 202 includes a sulfuric acid supply source that supplies sulfuric acid, a hydrogen peroxide solution supply source that supplies hydrogen peroxide solution, and a mixer that mixes the sulfuric acid and hydrogen peroxide solution.

[0029] The nozzle 141 mixes the vapor supplied from the vapor supply unit 201 and the SPM liquid supplied from the SPM supply unit 202, and discharges the mixture onto the wafer W. The specific configuration of the nozzle 141 will be described later.

[0030] The second supply mechanism 105 includes an auxiliary nozzle 151, a second arm 152 that extends horizontally and supports the auxiliary nozzle 151 from above, and a second swivel and lift mechanism 153 that swivels and raises and lowers the second arm 152. The second swivel and lift mechanism 153 enables the second arm 152 to move the auxiliary nozzle 151 between a processing position above the wafer W and a standby position outside the wafer W.

[0031] The auxiliary nozzle 151 is connected to the vapor supply unit 201 via a vapor supply path 212. The vapor supply unit 201 supplies vapor to the auxiliary nozzle 151 via the vapor supply path 212. The auxiliary nozzle 151 is also connected to a rinse liquid supply unit 203 via a rinse liquid supply path 231 and to a substitute liquid supply unit 204 via a substitute liquid supply path 241. The rinse liquid supply unit 203 supplies a rinse liquid, here, pure water (deionized water) as an example, to the auxiliary nozzle 151 via the rinse liquid supply path 231. The substitute liquid supply unit 204 supplies a substitute liquid, here, IPA (isopropyl alcohol) as an example, to the auxiliary nozzle 151 via the substitute liquid supply path 241. The rinse liquid supply unit 203 and the substitute liquid supply unit 204 may be configured using any known technology.

[0032] The auxiliary nozzle 151 discharges vapor supplied from the vapor supply unit 201 through a vapor supply path 212 onto the wafer W. The auxiliary nozzle 151 also discharges a rinse liquid supplied from the rinse liquid supply unit 203 through a rinse liquid supply path 231 onto the wafer W. The auxiliary nozzle 151 also discharges a substitute liquid supplied from the substitute liquid supply unit 204 through a substitute liquid supply path 241 onto the wafer W.

[0033] The nozzle cleaning mechanism 106 is disposed at a standby position for the nozzle 141. The nozzle cleaning mechanism 106 cleans the nozzle 141. The configuration of the nozzle cleaning mechanism 106 will be described later.

[0034] The substrate processing apparatus 1 also includes a control device 300. The control device 300 is, for example, a computer, and includes a control unit 301 and a storage unit 302. The storage unit 302 stores programs that control various processes executed in the substrate processing apparatus 1. The control unit 301 controls the operation of the substrate processing apparatus 1 by reading and executing the programs stored in the storage unit 302.

[0035] Such a program may be recorded on a computer-readable storage medium and installed from that storage medium into the storage unit 302 of the control device 300. Examples of computer-readable storage media include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.

[0036] <Nozzle configuration> Next, the configuration of the nozzle 141 will be described with reference to Figs. 3 to 6. Fig. 3 is a cross-sectional view of the nozzle 141 according to the first embodiment cut along a plane perpendicular to the longitudinal direction. Fig. 4 is a cross-sectional view taken along the line IV-IV shown in Fig. 3. Fig. 5 is a cross-sectional view taken along the line VV shown in Fig. 3. Fig. 6 is a view of the nozzle 141 according to the first embodiment seen from below.

[0037] 3, the nozzle 141 includes a nozzle body 41, two first distribution paths 42, one second distribution path 43, and a lead-out path 44. The nozzle 141 also includes a plurality of first discharge ports 45 and a plurality of first discharge paths 46 (see FIG. 4), a plurality of second discharge ports 47 and a plurality of second discharge paths 48 (see FIG. 5).

[0038] The first distribution path 42 and the second distribution path 43 are formed inside the nozzle body 41. As shown in Figures 4 and 5, the first distribution path 42 and the second distribution path 43 extend along the longitudinal direction of the nozzle body 41. The first distribution path 42 is connected to the vapor supply unit 201 via a vapor supply path 211. The second distribution path 43 is connected to the SPM supply unit 202 via an SPM supply path 221.

[0039] 3, the second distribution passage 43 is disposed on the median line (the line that bisects the nozzle body 41 into left and right halves) in a cross-sectional view of the nozzle body 41. The two first distribution passages 42 are disposed on the left and right sides of the second distribution passage 43, respectively.

[0040] The outlet path 44 is located below the first distribution path 42 and the second distribution path 43. As shown in Figures 3 to 5, the outlet path 44 is a slit-shaped flow path provided in the lower part of the nozzle body 41, and extends along the longitudinal direction of the nozzle body 41 and also extends vertically downward. Both ends of the outlet path 44 in the longitudinal direction (the same direction as the longitudinal direction of the nozzle body 41) and the lower end are open.

[0041] The plurality of first discharge ports 45 and the plurality of second discharge ports 47 open to the upper end surface of the lead-out path 44. As shown in Figures 4 and 5, the plurality of first discharge ports 45 and the plurality of second discharge ports 47 are arranged along the longitudinal direction of the nozzle body 41. The plurality of first discharge ports 45 and the plurality of second discharge ports 47 are arranged over substantially the entire area of ​​the lead-out path 44 from one end to the other end in the longitudinal direction.

[0042] The plurality of first discharge ports 45 are connected to the first distribution path 42 via a plurality of first discharge paths 46. The plurality of second discharge ports 47 are connected to the second distribution path 43 via a plurality of second discharge paths 48.

[0043] The vapor supplied from the vapor supply unit 201 to the first distribution path 42 is distributed from the first distribution path 42 to multiple first discharge paths 46 and discharged from multiple first discharge ports 45 to the outlet path 44. In addition, the SPM liquid supplied from the SPM supply unit 202 to the second distribution path 43 is distributed from the second distribution path 43 to multiple second discharge paths 48 and discharged from multiple second discharge ports 47 to the outlet path 44.

[0044] The vapor ejected from the first outlet 45 and the SPM liquid ejected from the second outlet 47 are mixed near the upper end, which is the inlet of the outlet path 44, and are ejected toward the wafer W from the lower end, which is the outlet of the outlet path 44.

[0045] If the nozzle 141 did not have the outlet path 44, the droplets of the SPM liquid ejected from the nozzle 141 would diffuse, and the SPM liquid and vapor might not be mixed properly. Furthermore, the diffused SPM liquid might adhere to the inner wall of the chamber 101, contaminating the chamber 101 and the wafer W inside the chamber 101.

[0046] In contrast to this, the nozzle 141 according to the first embodiment is provided with the outlet path 44, and thus can prevent the vapor and SPM liquid discharged from the first outlet 45 from diffusing without coming into contact with each other. This allows the nozzle 141 to efficiently mix the vapor and SPM liquid. Therefore, the nozzle 141 according to the embodiment can raise the temperature of the SPM liquid to a higher level compared to, for example, a nozzle that does not have the outlet path 44. Furthermore, contamination inside the chamber 101 due to diffusion of the SPM liquid can be suppressed.

[0047] 6, the cross-sectional area of ​​the outlet path 44 is larger than the cross-sectional area of ​​the first discharge port 45. For example, the cross-sectional area of ​​the outlet path 44 is synonymous with the opening area of ​​the lower end of the outlet path 44, and can be expressed as D0×L0, where D0 is the width of the outlet path 44 and L0 is the length. The cross-sectional area of ​​the first discharge port 45 is synonymous with the opening area of ​​the first discharge port 45, and can be expressed as (D1 / 2) where D1 is the diameter of the first discharge port 45. 2 ×π. The cross-sectional area of ​​the first outlet 45 here may refer to the total cross-sectional area of ​​the multiple first outlets 45 included in the nozzle 141. The cross-sectional area of ​​the outlet path 44 is larger than the total cross-sectional area of ​​the multiple first outlets 45 and the multiple second outlets 47.

[0048] If the cross-sectional area of ​​the outlet path 44 is too large, the speed of droplets of SPM liquid passing through the outlet path 44 will be slow, and the droplets of SPM liquid moving along the inner wall of the outlet path 44 will tend to gather together and form large droplets. On the other hand, if the cross-sectional area of ​​the outlet path 44 is too small, the flow rate of vapor within the outlet path 44 will be restricted to a low level, and droplets of SPM liquid will not be properly formed near the inlet of the outlet path 44, and the droplets that are formed may be larger than the desired particle size. Therefore, it is desirable to form the cross-sectional area of ​​the outlet path 44 to an appropriate size so that droplets of SPM liquid can be discharged onto the wafer W in a sufficiently atomized state.

[0049] For this reason, as described above, in the nozzle 141 according to the first embodiment, the cross-sectional area of ​​the outlet path 44 is formed to be larger than the cross-sectional area of ​​the first discharge port 45. By forming it in this manner, it is possible to appropriately atomize the droplets of the SPM liquid.

[0050] <Configuration of the nozzle cleaning mechanism> Next, the configuration of the nozzle cleaning mechanism 106 will be described with reference to Fig. 7. Fig. 7 is a cross-sectional view of the nozzle cleaning mechanism 106 according to the first embodiment, taken along a plane perpendicular to the longitudinal direction.

[0051] 7, the nozzle cleaning mechanism 106 includes a cleaning tank 161, two cleaning liquid supply paths 162, a plurality of cleaning liquid discharge ports 163, and a discharge port 164. The nozzle cleaning mechanism 106 also includes a dew removal member 165.

[0052] The cleaning tank 161 is formed in an elongated shape to match the outer shape of the nozzle body 41. The cleaning tank 161 is capable of accommodating the nozzle 141. The cleaning liquid supply path 162 is formed inside the nozzle cleaning mechanism 106 and extends along the longitudinal direction (Y-axis direction) of the cleaning tank 161. The cleaning liquid supply path 162 is connected to a cleaning liquid supply source (not shown), and allows the cleaning liquid supplied from the cleaning liquid supply source to flow. The cleaning liquid is, for example, pure water (deionized water). The two cleaning liquid supply paths 162 are arranged one on each side of the cleaning tank 161, left and right.

[0053] A plurality of cleaning liquid discharge ports 163 open to the inner wall surface of the cleaning tank 161. The cleaning liquid discharge ports 163 are arranged along the longitudinal direction of the cleaning tank 161. The cleaning liquid discharge ports 163 communicate with the cleaning liquid supply path 162, and discharge the cleaning liquid flowing through the cleaning liquid supply path 162 into the interior of the cleaning tank 161. The discharge port 164 is provided at the bottom of the cleaning tank 161, and discharges the cleaning liquid from the cleaning tank 161.

[0054] The dew removal member 165 is disposed inside the cleaning tank 161. The dew removal member 165 is an elongated member extending along the longitudinal direction of the cleaning tank 161. The dew removal member 165 is formed of a material that is more hydrophilic than the nozzle body 41 of the nozzle 141. For example, the nozzle body 41 is formed of resin, whereas the dew removal member 165 is formed of quartz. In the illustrated example, the cross-sectional shape of the dew removal member 165 is circular, but the cross-sectional shape of the dew removal member 165 does not necessarily have to be circular.

[0055] The nozzle cleaning mechanism 106 includes an overflow line (not shown) for discharging the cleaning liquid exceeding a certain amount from the cleaning tank 161 when a certain amount of cleaning liquid has been stored in the cleaning tank 161. The overflow line is provided, for example, below the multiple cleaning liquid outlets 163.

[0056] Next, the cleaning process of the nozzle 141 using the nozzle cleaning mechanism 106 will be described with reference to Figures 8 to 10. Figures 8 to 10 are explanatory diagrams of the operation of the nozzle cleaning process according to the first embodiment. The nozzle cleaning process shown in Figures 8 to 10 is executed under the control of the control unit 301 (see Figure 1).

[0057] 8, the control unit 301 first moves the nozzle 141 into the cleaning tank 161. As a result, the nozzle 141 is disposed in the cleaning tank 161 of the nozzle cleaning mechanism 106. At this time, the nozzle 141 is disposed in a position close to the dew removal member 165 but not in contact with it.

[0058] Next, the control unit 301 causes the cleaning liquid to be discharged from the multiple cleaning liquid discharge ports 163. After being discharged onto the side surface of the nozzle body 41 placed in the cleaning tank 161, the cleaning liquid flows downward along the gap between the side surface of the nozzle body 41 and the inner surface of the cleaning tank 161.

[0059] 9, the cleaning liquid is stored in the cleaning tank 161. As a result, at least a part of the nozzle body 41, including the lower part, is immersed in the cleaning liquid. Note that any cleaning liquid exceeding a certain amount is discharged from an overflow line (not shown).

[0060] In this way, the nozzle cleaning mechanism 106 can clean the nozzle 141 by discharging the cleaning liquid from the multiple cleaning liquid discharge ports 163 toward the side surface of the nozzle body 41 and by immersing the nozzle 141 in the cleaning liquid stored in the cleaning tank 161. Specifically, the SPM liquid adhering to the nozzle 141 can be removed.

[0061] Next, the control unit 301 raises the nozzle 141. At this time, the cleaning liquid adhering to the nozzle 141 is collected below the nozzle 141 by gravity. Then, the cleaning liquid adhering to the nozzle 141 moves to the dew removal member 165, which is more hydrophilic than the nozzle 141. As a result, the cleaning liquid is removed from the nozzle 141, and the nozzle 141 is dried.

[0062] The nozzle 141 according to the first embodiment includes the outlet path 44, and therefore has a more complex structure than a nozzle without the outlet path 44. For this reason, when drying the nozzle 141 using a gas such as N2 (nitrogen) gas, it is preferable to increase the gas discharge flow rate. However, increasing the gas discharge flow rate may change the internal pressure of the chamber 101, which may affect the processing of the wafer W. In contrast, the nozzle cleaning mechanism 106 according to the first embodiment includes a dew removal member 165 that is more hydrophilic than the nozzle 141, thereby enabling the nozzle 141 to be dried without using gas. That is, the dew removal member 165 is interposed between the nozzle 141 and the dew removal member 165, and moves droplets of the cleaning liquid in contact with both the nozzle 141 and the dew removal member 165 from the nozzle 141 to the dew removal member 165.

[0063] Therefore, according to the nozzle cleaning mechanism 106 in accordance with the first embodiment, the nozzle 141 can be dried without affecting the processing of the wafer W.

[0064] <Specific operation of the substrate processing apparatus> Next, a specific operation of the substrate processing apparatus 1 will be described with reference to Fig. 11. Fig. 11 is a flowchart showing the procedure of processing executed by the substrate processing apparatus 1 according to the first embodiment. A series of processing shown in Fig. 11 is executed under the control of the control unit 301.

[0065] First, in the substrate processing apparatus 1, a wafer W is loaded (step S101). Specifically, the wafer W is loaded into the chamber 101 (see FIG. 1) of the substrate processing apparatus 1 by a substrate transfer device disposed outside the substrate processing apparatus 1, and is held by the substrate holding part 102. Thereafter, the substrate processing apparatus 1 rotates the substrate holding part 102 at a predetermined rotation speed.

[0066] Next, SPM processing is performed in the substrate processing apparatus 1 (step S102). First, the first swivel lifting mechanism 143 moves the nozzle 141 from the standby position to the processing position above the wafer W. Then, a mixed fluid of vapor and SPM liquid is discharged from the nozzle 141 onto the surface of the wafer W. This removes the resist film formed on the surface of the wafer W.

[0067] In the substrate processing apparatus 1, an auxiliary nozzle 151 may be used in the SPM process. When the auxiliary nozzle 151 is used, the second swivel lifting mechanism 153 positions the auxiliary nozzle 151 above the wafer W. Specifically, the auxiliary nozzle 151 is placed in a location where the supply of vapor may be insufficient with the nozzle 141 alone, such as the outer periphery of the wafer W. Thereafter, the vapor is ejected from the auxiliary nozzle 151 onto the surface of the wafer W.

[0068] In this way, by using the auxiliary nozzle 151, it is possible to supply the vapor more uniformly to the entire surface of the wafer W. Therefore, it is possible to increase the temperature of the SPM liquid more uniformly over the entire surface of the wafer W.

[0069] After the SPM process in step S102 is completed, the substrate processing apparatus 1 performs a rinse process (step S103). In this rinse process, a rinse liquid (pure water) is supplied from the auxiliary nozzle 151 to the surface of the wafer W. The rinse liquid supplied to the wafer W is spread over the surface of the wafer W by centrifugal force caused by the rotation of the wafer W. As a result, the SPM liquid remaining on the wafer W is washed away by the rinse liquid.

[0070] Next, a replacement process is performed in the substrate processing apparatus 1 (step S104). In the replacement process, a replacement liquid (IPA) is supplied from the auxiliary nozzle 151 to the surface of the wafer W. The replacement liquid supplied to the wafer W is spread over the surface of the wafer W by centrifugal force caused by the rotation of the wafer W. As a result, the rinse liquid remaining on the wafer W is replaced with the replacement liquid.

[0071] Next, a drying process is performed in the substrate processing apparatus 1 (step S105). In the drying process, the rotation speed of the wafer W is increased. As a result, the substitute liquid remaining on the wafer W is shaken off, and the wafer W is dried. Thereafter, the rotation of the wafer W is stopped.

[0072] Next, an unloading process is performed in the substrate processing apparatus 1 (step S106). In the unloading process, the wafer W held by the substrate holding part 102 is transferred to an external substrate transfer device. When the unloading process is completed, the substrate processing for one wafer W is completed.

[0073] The nozzle cleaning process described above may be performed after the SPM process for a certain wafer W is completed, and may be completed before the SPM process for the next wafer W is started.

[0074] (Second embodiment) Next, the configuration of a nozzle according to a second embodiment will be described with reference to Figs. 12 to 14. Fig. 12 is a cross-sectional view of the nozzle according to the second embodiment taken along a plane perpendicular to the longitudinal direction. Fig. 13 is a cross-sectional view taken along the arrows XIII-XIII shown in Fig. 12. Fig. 14 is a cross-sectional view taken along the arrows XIV-XIV shown in Fig. 12.

[0075] 12, the nozzle 141A according to the second embodiment is a so-called internal mixing type two-fluid nozzle. The nozzle 141A includes a long nozzle body 41A, a plurality of first supply paths 42A (see FIG. 13), a plurality of second supply paths 43A (see FIG. 14), and a plurality of outlet paths 44A (see FIG. 14). The nozzle 141A also includes a plurality of first outlets 45A (see FIG. 13) and a plurality of second outlets 47A (see FIG. 14).

[0076] The second supply path 43A supplies the SPM liquid to the inside of the nozzle main body 41A. The second supply path 43A and the outlet path 44A extend vertically and are arranged coaxially. The second supply path 43A includes an inlet section 431 and a throttle section 432. The inlet section 431 corresponds to the upstream flow path of the second supply path 43A, and the throttle section 432 corresponds to the downstream flow path of the second supply path 43A. The throttle section 432 is formed so as to have a smaller cross-sectional area (diameter) than the inlet section 431.

[0077] The outlet of throttle portion 432 is disposed close to the inlet of outlet path 44A. The cross-sectional area of ​​throttle portion 432 is preferably constant from the inlet to the outlet, and the cross-sectional shape of throttle portion 432 is preferably, for example, circular or elliptical. As shown in the figure, when the cross-sectional area of ​​throttle portion 432 is constant from the inlet to the outlet, the cross-sectional area (diameter) of second discharge port 47A, which is the outlet of second supply path 43A, is equal to the cross-sectional area (diameter) of throttle portion 432.

[0078] An annular introduction space 49 is formed around the second supply path 43A so as to surround the throttle portion 432.

[0079] The first supply path 42A supplies vapor to the inside of the nozzle main body 41 A. Specifically, a first discharge port 45A, which is an outlet of the first supply path 42A, is connected to the introduction space 49 and supplies vapor to the introduction space 49.

[0080] The second supply path 43A is disposed so as to pass through the inside of the introduction space 49. The introduction space 49 is formed in a cylindrical shape with an annular cross section. The introduction space 49 is formed with an annular portion 491 and a tapered portion 492 whose diameter decreases downward. The tapered portion 492 is formed on the downstream side of the annular portion 491, and the outlet of the tapered portion 492 opens in an annular shape between the outlet of the throttle portion 432 of the second supply path 43A and the inlet of the discharge path 44A. Therefore, the vapor introduced into the introduction space 49 is mixed with the SPM liquid supplied from the throttle portion 432 of the second supply path 43A near the inlet of the discharge path 44A, thereby forming a mixed fluid of the SPM liquid (droplets of the SPM liquid).

[0081] First discharge port 45A, which is an outlet of first supply path 42A, opens into the inner wall surface of annular portion 491 in introduction space 49. First supply path 42A includes an introduction section 421 and a throttling section 422. Introduction section 421 corresponds to the upstream flow path of first supply path 42A, and throttling section 422 corresponds to the downstream flow path of first supply path 42A. Throttle section 422 is formed to have a smaller cross-sectional area (diameter) than introduction section 431. The outlet of throttling section 422 corresponds to first discharge port 45A and opens into the inner surface of annular portion 491. The cross-sectional area of ​​throttling section 422 is preferably constant from the inlet to the outlet, and the cross-sectional shape of throttling section 422 is preferably, for example, circular or elliptical. As shown in the figure, when the cross-sectional area of ​​the throttle portion 422 is constant from the inlet to the outlet, the cross-sectional area (diameter) of the first discharge port 45A, which is the outlet of the second supply path 43A, is equal to the cross-sectional area (diameter) of the throttle portion 422.

[0082] As described above, the outlet path 44A is disposed coaxially with the second supply path 43A, and communicates with the second supply path 43A and the introduction space 49. The outlet path 44A is preferably formed linearly, and the cross-sectional area (diameter) of the outlet path 44A is preferably constant from the inlet to the outlet, and the cross-sectional shape of the outlet path 44A is preferably, for example, circular or elliptical.

[0083] The vapor introduced from first supply path 42A via introduction space 49 and the SPM liquid introduced from second supply path 43A are mixed near the inlet of outlet path 44A. This causes countless droplets of SPM liquid to be formed, and the formed droplets are discharged to the outside together with the vapor via outlet path 44A.

[0084] A plurality of injection ports 442 are provided at the tip of the lead-out path 44A. The injection ports 442 are formed in an orifice shape with a cross-sectional area smaller than that of the lead-out path 44A. If there were no orifice-shaped injection ports 442 with a cross-sectional area smaller than that of the lead-out path 44A, droplets growing along the inner wall of the lead-out path 44A would be ejected as they were. The cross-sectional area of ​​the injection ports 442 is preferably constant from the inlet to the outlet, and the cross-sectional shape of the injection ports 442 is preferably, for example, circular or elliptical. The droplets that pass through the lead-out path 44A are atomized again while passing through the injection ports 442 and then ejected. Therefore, even if the droplets grow large while moving along the inner wall of the lead-out path 44A, passing the injection ports 442 allows the droplets to be atomized into sufficiently small particle sizes and then ejected.

[0085] 13, the plurality of first supply paths 42A are arranged along the longitudinal direction of the nozzle main body 41A. The first supply paths 42A are connected to the vapor supply unit 201 via a vapor supply path 211. Similarly, as shown in FIG. 14, the plurality of second supply paths 43A are also arranged along the longitudinal direction of the nozzle main body 41A. The second supply path 43A is connected to the SPM supply unit 202 via an SPM supply path 221.

[0086] As shown in Figures 12 to 14, the nozzle 141A according to the second embodiment has a plurality of first outlets 45A and a plurality of second outlets 47A, as well as a plurality of outlet paths 44A that communicate with one first outlet 45A and one second outlet 47A.

[0087] <Modification> FIG. 15 is a cross-sectional view of a nozzle according to a first modified example of the first embodiment, taken along a plane perpendicular to the longitudinal direction.

[0088] 15, nozzle main body 41B of nozzle 141B according to the first modification includes a lead-out path 44B. While lead-out path 44 of nozzle 141 according to the first embodiment described above is open at both longitudinal ends and the lower end, lead-out path 44B according to the first modification is closed at both longitudinal ends and the lower end, and an injection port 442B is formed at the lower end of lead-out path 44B. A plurality of injection ports 442B are provided along the longitudinal direction of nozzle 141B relative to the lower end of lead-out path 44B.

[0089] In this manner, the outlet path 44B of the nozzle 141B may have a plurality of injection ports 442B.

[0090] FIG. 16 is a cross-sectional view of a nozzle according to a second modified example of the first embodiment, taken along a plane perpendicular to the longitudinal direction.

[0091] 16, a nozzle 141C according to the second modification includes a nozzle body 41C. The nozzle body 41C includes a flange 411 that extends horizontally outward from the lower end of the nozzle body 41C, in other words, from the lower end of the outlet path 44. By providing the flange 411 in this manner, the vapor discharged from the outlet path 44 can be retained near the surface of the wafer W, further promoting mixing of the vapor and the SPM liquid. Note that such a flange 411 may also be provided in the nozzle 141A according to the second embodiment.

[0092] <Other variations> In the above-described embodiments and modifications, examples have been described in which vapor and SPM liquid are mixed, but mist may be used instead of vapor. That is, a mist supply unit that supplies a mist of pressurized pure water may be provided instead of the vapor supply unit 201.

[0093] In the above-described embodiments and modifications, a substrate processing apparatus that removes a resist film formed on the surface of a substrate has been described as an example. That is, an example has been described in which the object to be removed in the SPM process is a resist film. However, the object to be removed in the SPM process is not limited to a resist film. For example, the object to be removed in the SPM process may be residue (organic matter) after ashing. Furthermore, the object to be removed in the SPM process may be unwanted matter contained in an abrasive after CMP (chemical mechanical polishing).

[0094] In the first embodiment described above, the positions of the first outlet 45 and the second outlet 47 may be reversed. That is, vapor or mist may be discharged from the position of the second outlet 47 shown in FIG. 3, and SPM liquid may be discharged from the position of the first outlet 45. Similarly, in the second embodiment, the positions of the first outlet 45A and the second outlet 47A may be reversed. That is, vapor or mist may be discharged from the position of the second outlet 47A shown in FIG. 12, and SPM liquid may be discharged from the position of the first outlet 45A.

[0095] As described above, the substrate processing apparatus according to the embodiment (for example, the substrate processing apparatus 1) includes a substrate holding unit (for example, the substrate holding unit 102), a fluid supply unit (for example, the vapor supply unit 201), a processing liquid supply unit (for example, the SPM supply unit 202), and nozzles (for example, the nozzles 141, 141A to 141C). The substrate holding unit rotatably holds a substrate (for example, a wafer W). The fluid supply unit supplies a fluid (for example, a vapor or a mist) containing pressurized pure water vapor or mist. The processing liquid supply unit supplies a processing liquid (for example, an SPM liquid) containing at least sulfuric acid. The nozzle is connected to the fluid supply unit and the processing liquid supply unit, and mixes the fluid and the processing liquid and discharges the mixture onto the substrate. The nozzle also includes a first outlet (for example, first outlet 45, 45A), a second outlet (for example, second outlet 47, 47A), and a lead-out path (for example, lead-out paths 44, 44A, 44B). The first outlet discharges a fluid supplied from a fluid supply unit. The second outlet discharges a processing liquid supplied from a processing liquid supply unit. The lead-out path communicates with the first outlet and the second outlet, and leads out a mixed fluid of the fluid discharged from the first outlet and the processing liquid discharged from the second outlet. The cross-sectional area of ​​the lead-out path is larger than the cross-sectional area of ​​the first outlet.

[0096] According to the substrate processing apparatus of the embodiment, the outlet path can suppress diffusion of the fluid discharged from the first discharge port. This allows the fluid and the SPM liquid to be mixed efficiently, and the temperature of the SPM liquid can be efficiently increased. Therefore, according to the substrate processing apparatus of the embodiment, the removal efficiency of the removal target material in the SPM process can be improved.

[0097] The nozzles (for example, nozzles 141, 141B, and 141C) may include a plurality of first outlets (for example, first outlet 45) and a plurality of second outlets (for example, second outlet 47). The nozzles may also include one outlet path (for example, outlet path 44) that communicates with the plurality of first outlets and the plurality of second outlets.

[0098] The nozzle (for example, nozzle 141A) may have a plurality of first outlets (for example, first outlet 45A) and a plurality of second outlets (for example, second outlet 47A). The nozzle may also have a plurality of outlet paths (for example, outlet path 44A) that communicate with one first outlet and one second outlet.

[0099] The outlet paths (for example, outlet paths 44A and 44B) may have a plurality of injection ports (for example, injection ports 442 and 442B) at their lower ends. In this case, the cross-sectional area of ​​the injection ports may be smaller than the cross-sectional area of ​​the outlet paths. This allows the droplets to be atomized into sufficiently small particle sizes by passing through the injection ports, even if they grow large while moving along the inner walls of the outlet paths.

[0100] The substrate processing apparatus according to the embodiment may also include an auxiliary nozzle (for example, auxiliary nozzle 151) that is provided separately from the nozzle and ejects the fluid onto the substrate. By using the auxiliary nozzle, the vapor can be supplied more evenly over the entire surface of the substrate. Therefore, the temperature of the SPM liquid can be increased more evenly over the entire surface of the substrate.

[0101] The substrate processing apparatus according to the embodiment may include a nozzle moving unit (for example, a first arm 142) that moves the nozzle between a processing position above the substrate holding unit and a standby position outside the substrate holding unit. The substrate processing apparatus may also include a cleaning mechanism (for example, a nozzle cleaning mechanism 106) that is disposed at the standby position and cleans the nozzle. By including the nozzle cleaning mechanism, the SPM liquid adhering to the nozzle 141 can be removed.

[0102] The cleaning mechanism may include a cleaning tank (for example, cleaning tank 161) that houses the nozzle, a cleaning liquid discharge unit (for example, cleaning liquid discharge port 163) that discharges cleaning liquid into the cleaning tank, and a dew removal member (for example, dew removal member 165) arranged inside the cleaning tank. The dew removal member is interposed between the nozzle and the dew removal member, and moves droplets of cleaning liquid that come into contact with both the nozzle and the dew removal member from the nozzle to the dew removal member. This allows the nozzle to dry without using a gas such as N2.

[0103] The dew removal member has a higher hydrophilicity than the nozzle, which allows the cleaning liquid adhering to the nozzle to be appropriately transferred to the dew removal member.

[0104] The disclosed embodiments should be considered in all respects as illustrative and not restrictive. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0105] 1: Substrate processing equipment 41: Nozzle body 42: 1st distribution route 43:Second distribution route 44: Derivation path 45: 1st discharge port 46: 1st discharge path 47:Second discharge port 48:Second discharge path 102: Board holding part 106: Nozzle cleaning mechanism 141: Nozzle 142: First arm 143: First swivel lift mechanism 151: Auxiliary nozzle 152: Second arm 153: Second swivel lift mechanism 161: Cleaning tank 162: Cleaning liquid supply path 163: Cleaning liquid outlet 164: Outlet 165: Dew removal material 201: Vapor supply section 211: Vapor supply line 221:SPM supply path W: Wafer

Claims

1. a substrate holder that rotatably holds the substrate; a fluid supply unit that supplies a fluid containing pressurized pure water vapor or mist; a processing solution supply unit that supplies a processing solution containing at least sulfuric acid; a nozzle connected to the fluid supply unit and the processing liquid supply unit, for mixing the fluid and the processing liquid and discharging the mixture onto the substrate; Equipped with The nozzle is a first discharge port that discharges the fluid supplied from the fluid supply unit; a second discharge port that discharges the processing liquid supplied from the processing liquid supply unit; an outlet path that communicates with the first outlet and the second outlet and that outputs a mixed fluid of the fluid discharged from the first outlet and the processing liquid discharged from the second outlet; Equipped with The cross-sectional area of ​​the outlet path is larger than the cross-sectional area of ​​the first discharge port, The nozzle is a substrate processing apparatus including a plurality of the first discharge ports and a plurality of the second discharge ports, and a plurality of the outlet paths communicating with one of the first discharge ports and one of the second discharge ports;

2. a substrate holder that rotatably holds the substrate; a fluid supply unit that supplies a fluid containing pressurized pure water vapor or mist; a processing solution supply unit that supplies a processing solution containing at least sulfuric acid; a nozzle connected to the fluid supply unit and the processing liquid supply unit, for mixing the fluid and the processing liquid and discharging the mixture onto the substrate; Equipped with The nozzle is a first discharge port that discharges the fluid supplied from the fluid supply unit; a second discharge port that discharges the processing liquid supplied from the processing liquid supply unit; an outlet path that communicates with the first outlet and the second outlet and that outputs a mixed fluid of the fluid discharged from the first outlet and the processing liquid discharged from the second outlet; Equipped with The cross-sectional area of ​​the outlet path is larger than the cross-sectional area of ​​the first discharge port, the outlet path has a plurality of injection ports at a lower end thereof; The substrate processing apparatus, wherein a cross-sectional area of ​​the injection port is smaller than a cross-sectional area of ​​the outlet path.

3. a substrate holder that rotatably holds the substrate; a fluid supply unit that supplies a fluid containing pressurized pure water vapor or mist; a processing solution supply unit that supplies a processing solution containing at least sulfuric acid; a nozzle connected to the fluid supply unit and the processing liquid supply unit, for mixing the fluid and the processing liquid and discharging the mixture onto the substrate; a nozzle moving unit that moves the nozzle between a processing position above the substrate holding unit and a standby position outside the substrate holding unit; a cleaning mechanism disposed at the standby position and configured to clean the nozzle; Equipped with The nozzle is a first discharge port that discharges the fluid supplied from the fluid supply unit; a second discharge port that discharges the processing liquid supplied from the processing liquid supply unit; an outlet path that communicates with the first outlet and the second outlet and that outputs a mixed fluid of the fluid discharged from the first outlet and the processing liquid discharged from the second outlet; Equipped with The cleaning mechanism includes: a cleaning tank that accommodates the nozzle; a cleaning liquid discharge unit that discharges a cleaning liquid into the cleaning tank; a dew removal member disposed inside the cleaning tank; Equipped with The cross-sectional area of ​​the outlet path is larger than the cross-sectional area of ​​the first discharge port, In the substrate processing apparatus, the dew condensation removing member is interposed between the nozzle and the dew condensation removing member to move droplets of the cleaning liquid that are in contact with both the nozzle and the dew condensation removing member from the nozzle to the dew condensation removing member.

4. The nozzle is 4. The substrate processing apparatus according to claim 2, further comprising a plurality of the first discharge ports and a plurality of the second discharge ports, and a single outlet path communicating with the plurality of the first discharge ports and the plurality of the second discharge ports.

5. The nozzle is The substrate processing apparatus according to claim 2 , further comprising a plurality of the first discharge ports and a plurality of the second discharge ports, and a plurality of the outlet paths communicating with one of the first discharge ports and one of the second discharge ports.

6. the outlet path has a plurality of injection ports at a lower end thereof; The substrate processing apparatus according to claim 1 , wherein a cross-sectional area of ​​the injection port is smaller than a cross-sectional area of ​​the outlet path.

7. an auxiliary nozzle provided separately from the nozzle and configured to eject the fluid onto the substrate; The substrate processing apparatus according to claim 1, further comprising:

8. a nozzle moving unit that moves the nozzle between a processing position above the substrate holding unit and a standby position outside the substrate holding unit; a cleaning mechanism disposed at the standby position and configured to clean the nozzle; The substrate processing apparatus according to claim 1 , further comprising:

9. The cleaning mechanism includes: a cleaning tank that accommodates the nozzle; a cleaning liquid discharge unit that discharges a cleaning liquid into the cleaning tank; a dew removal member disposed inside the cleaning tank; Equipped with The substrate processing apparatus according to claim 8 , wherein the dew condensation remover is interposed between the nozzle and the dew condensation remover to move droplets of the cleaning liquid in contact with both the nozzle and the dew condensation remover from the nozzle to the dew condensation remover.

10. The substrate processing apparatus according to claim 9 , wherein the dew removal member is more hydrophilic than the nozzle.

11. 11. The substrate processing apparatus according to claim 1, wherein the processing liquid is an SPM liquid, which is a mixture of sulfuric acid and hydrogen peroxide solution.

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