prober

Abstract

A prober capable of improving the reliability of electrical contact between electrode pads on a wafer and probes is provided. [Solution] The device comprises a wafer chuck (16), a probe card (18), a Z-axis movement and rotation unit (52) that detachably supports the wafer chuck (16) and can move the wafer chuck (16) up and down freely, and moves the wafer chuck (16) toward the probe card (18) so that the probes (28) are in contact with the electrode pads on the wafer (W), and a pressure reduction and attraction means that forms a pressure reduction space between the probe card (18) and the wafer chuck (16) after the probes (28) are brought into contact with the electrode pads by the Z-axis movement and rotation unit (52), and attracts the wafer chuck (16) toward the probe card (18) by reducing the pressure in the pressure reduction space, and the contact pressure between the probes (28) and the electrode pads by the Z-axis movement and rotation unit (52) is about 70% of the contact pressure by the pressure reduction and attraction means.

Description

[Technical Field]

[0001] The present invention relates to a prober that brings electrode pads on a wafer held by a wafer chuck into contact with probes provided on a probe card. [Background technology]

[0002] Conventionally, a probe contact method is known in which a wafer chuck is raised by a lifting mechanism until a sealing member provided on the wafer chuck contacts a probe card to form an internal space (sealed space) surrounded by the wafer chuck, probe card, and sealing member, and then the internal space is depressurized by a pressure reducing means (vacuum pump), thereby drawing the wafer chuck toward the probe card and bringing electrode pads on a wafer (semiconductor wafer) held by the wafer chuck into contact with probes provided on the probe card (see, for example, Patent Document 1).

[0003] Furthermore, conventionally, when contacting an electrode pad on a wafer with a probe, from the viewpoint of electrical contact reliability, it is required to remove the oxide film, which is an insulator formed on the electrode pad on the wafer, and then contact the new metal surfaces (see, for example, Patent Document 2). [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2010-186998 [Patent Document 2] Japanese Patent Application Laid-Open No. 2003-287552 Summary of the Invention [Problem to be solved by the invention]

[0005] However, in the probe contact method described in Patent Document 1, the electrode pads on the wafer and the probes do not come into contact when the lifting mechanism lifts the wafer chuck, but only when the pressure reduction means subsequently pulls the wafer chuck in. Furthermore, the speed at which the pressure reduction means pulls the wafer chuck in is slower than the speed at which the lifting mechanism lifts the wafer chuck. Therefore, even if the electrode pads on the wafer and the probes come into contact when the pressure reduction means pulls the wafer chuck in, the oxide film, which is an insulator formed on the electrode pads on the wafer, cannot be removed, and there is a problem that it is difficult to improve the reliability of the electrical contact between the electrode pads on the wafer and the probes.

[0006] The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a prober that can improve the reliability of electrical contact between the electrode pads on the wafer and the probes. [Means for solving the problem]

[0007] In order to achieve the above object, a prober according to one aspect of the present invention comprises: a wafer chuck for holding a wafer; a probe card arranged opposite the wafer chuck and having probes at positions corresponding to each electrode pad on the wafer; an annular seal member arranged on the wafer chuck and formed to surround the wafer held by the wafer chuck; a mechanical lifting / lowering means having a wafer chuck fixing portion for detachably fixing the wafer chuck and for raising and lowering the wafer chuck fixed to the wafer chuck fixing portion; a decompression means for decompressing an internal space formed by the probe card, the wafer chuck, and the seal member when the wafer chuck is moved toward the probe card by the mechanical lifting / lowering means; a lifting / lowering control means for controlling the mechanical lifting / lowering means to move the wafer chuck toward the probe card so that the probes contact the electrode pads in an overdrive state; and a decompression control means for controlling the decompression means so that the wafer chuck is drawn to the probe card by the decompression of the internal space after the probes contact the electrode pads in an overdrive state.

[0008] In one aspect of the prober of the present invention, the lift control means controls the mechanical lift means to move the wafer chuck toward the probe card so that the electrode pads come into contact with the probes multiple times.

[0009] One aspect of the prober of the present invention includes a timing control means for releasing the fixation of the wafer chuck by the wafer chuck fixing portion at a second timing that is later than a first timing at which the decompression means starts decompressing the internal space.

[0010] One aspect of the prober of the present invention comprises a communication passage that connects the internal space and the external space, a shutter means that can open and close the communication passage, and a shutter control means that controls the shutter means so that the communication passage is opened when the wafer chuck is moved toward the probe card by a mechanical lifting means, and the communication passage is closed when the internal space is depressurized by a depressurizing means.

[0011] In one embodiment of the prober of the present invention, the probe is a cantilever type.

[0012] One aspect of the prober of the present invention is provided with a guide means for guiding the movement of the wafer chuck while restricting movement in a direction perpendicular to the direction of movement of the wafer chuck when the wafer chuck moves so as to be attracted toward the probe card due to reduced pressure in the internal space.

[0013] In one aspect of the prober of the present invention, the guide means has a bearing portion provided on the wafer chuck, and a guide shaft portion detachably fixed to the probe card support member and journaled by the bearing portion.

[0014] In one aspect of the prober of the present invention, at least three guide means are provided at different positions in a direction perpendicular to the moving direction of the wafer chuck.

[0015] In addition, in order to achieve the above-mentioned object, a probe contact method according to one aspect of the present invention is a probe contact method for a prober comprising: a wafer chuck for holding a wafer; a probe card arranged opposite the wafer chuck and having probes at positions corresponding to each electrode pad on the wafer; an annular seal member arranged on the wafer chuck and formed to surround the wafer held by the wafer chuck; and a mechanical lifting means having a wafer chuck fixing portion for detachably fixing the wafer chuck and for raising and lowering the wafer chuck fixed to the wafer chuck fixing portion, the probe contact method comprising: a wafer chuck moving step in which the mechanical lifting means moves the wafer chuck toward the probe card so as to bring the probes into contact with the electrode pads in an overdrive state; and a depressurizing step in which, after the wafer chuck moving step, the internal space formed by the probe card, the wafer chuck, and the seal member is depressurized.

[0016] In one aspect of the probe contact method of the present invention, the wafer chuck moving step controls a mechanical lifting means to move the wafer chuck toward the probe card so that the electrode pads come into contact with the probes multiple times.

[0017] One aspect of the probe contact method of the present invention includes a wafer chuck release step of releasing the wafer chuck from the wafer chuck fixing part at a second timing that is later than a first timing at which the pressure inside the internal space is started to be reduced.

[0018] In one aspect of the probe contact method of the present invention, the internal space is made non-sealed when the wafer chuck is moved toward the probe card in the wafer chuck moving process, and the internal space is made sealed when the internal space is depressurized in the depressurization process.

[0019] In one aspect of the probe contact method of the present invention, the probe is a cantilever type.

[0020] One aspect of the probe contact method of the present invention includes a guide step for guiding the movement of the wafer chuck while restricting movement in a direction perpendicular to the movement direction of the wafer chuck when the wafer chuck moves so as to be attracted toward the probe card due to reduced pressure in the internal space.

[0021] In one aspect of the probe contact method of the present invention, the guide step is performed by a guide means having a bearing portion provided on the wafer chuck and a guide shaft portion detachably fixed to the probe card support member and journaled on the bearing portion.

[0022] In one aspect of the probe contact method of the present invention, the guiding process guides the movement of the wafer chuck while restricting movement in a direction perpendicular to the movement direction of the wafer chuck at at least three different positions in the direction perpendicular to the movement direction of the wafer chuck. [Effects of the Invention]

[0023] According to the present invention, it is possible to improve the reliability of electrical contact between the electrode pads on the wafer and the probes.

[0024] Furthermore, to improve contact reliability, first remove the thin insulating layer on the surface of the electrode pad by rubbing the oxide film on the surface with a probe, and then make contact with the area where the insulating layer has peeled off at an appropriate pressure, thereby further improving contact reliability. [Brief explanation of the drawings]

[0025] [Figure 1] FIG. 1 is a diagram showing a schematic configuration of a system for performing wafer-level inspection according to the first embodiment. [Figure 2] FIG. 2 is a diagram showing the configuration of the periphery of the probe card. [Figure 3] FIG. 3 is a top perspective view showing a schematic configuration of the alignment device. [Figure 4] FIG. 4 is a bottom perspective view showing a schematic configuration of the alignment device. [Figure 5]FIG. 5 is a plan view schematically showing an example of the configuration of the moving device. [Figure 6] FIG. 6 is a side view schematically showing an example of the configuration of the moving device. [Figure 7] FIG. 7 is a plan view schematically showing another example of the configuration of the moving device. [Figure 8] FIG. 8 is a diagram showing a state in which the alignment device is positioned and fixed. [Figure 9] FIG. 9 is a diagram showing a configuration in which a group of measurement units, each consisting of a plurality of measurement units, is stacked vertically. [Figure 10] FIG. 10 shows an example of an inspection operation including a probe contact method using a prober. [Figure 11] FIG. 11 is a diagram showing an example of an inspection operation including a probe contact method using the prober of the second embodiment. [Figure 12A] FIG. 12A shows an example of a vertical probe. [Figure 12B] FIG. 12B is a diagram showing an example of a cantilever-type probe. [Figure 13] FIG. 13 is a schematic diagram showing the configuration of a prober according to the third embodiment. [Figure 14] FIG. 14 is a diagram showing an example of an inspection operation including a probe contact method using the prober of the third embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0026] Preferred embodiments of the present invention will now be described with reference to the accompanying drawings.

[0027] (First embodiment) First, the first embodiment will be described.

[0028] 1 is a diagram showing a schematic configuration of a system for performing wafer-level inspection according to the first embodiment. The system for performing wafer-level inspection comprises a prober 10 that brings probes into contact with metal electrode pads of each chip on a wafer (hereinafter also referred to as electrode pads on a wafer), and a tester 20 that is electrically connected to the probes and supplies power and test signals to each chip for electrical inspection, and detects output signals from each chip to determine whether it operates normally.

[0029] 1, a base 11, a side plate 12, and a head stage 13 constitute the housing of a prober 10. In some cases, an upper plate supported by the side plate 12 is provided, and the head stage 13 is provided on the upper plate.

[0030] The prober 10 is provided with a plurality of measurement units (first to third measurement units) 14A to 14C. Each of the measurement units 14A to 14C includes a wafer chuck 16 that holds the wafer W and a probe card 18 having a large number of probes 28 corresponding to the electrodes of each chip on the wafer W, and each of the measurement units 14A to 14C simultaneously inspects all chips on the wafer W held on the wafer chuck 16. Note that each of the measurement units 14A to 14C has a common configuration, and therefore, hereinafter, the measurement unit will be represented by the reference numeral 14.

[0031] FIG. 2 is a diagram showing the configuration of the periphery of the probe card.

[0032] The wafer chuck 16 adheres and fixes the wafer by vacuum suction, etc. The wafer chuck 16 is detachably supported by an alignment device 50 (described later) and can be moved in the X, Y, Z, and θ directions by the alignment device 50.

[0033] The wafer chuck 16 is provided with a sealing mechanism. The sealing mechanism includes an elastic ring-shaped seal member (an example of an annular seal member) 40 provided near the outer periphery of the upper surface of the wafer chuck 16. A suction port 42 is provided on the upper surface of the wafer chuck 16 between the wafer W and the ring-shaped seal member 40. The suction port 42 is connected to a suction control unit 46 that controls the vacuum pressure via a suction path 43 formed inside the wafer chuck 16. The suction control unit 46 is connected to a vacuum pump 44. When the ring-shaped seal member 40 contacts the probe card 18 and a sealed internal space S (enclosed space) is formed between the wafer chuck 16, the probe card 18, and the ring-shaped seal member 40, the pressure in the internal space S is reduced and the wafer chuck 16 is drawn toward the probe card 18. This brings the probe card 18 and the wafer chuck 16 into close contact, allowing the probes 28 to contact the electrode pads of the chips, enabling testing to begin. 10(B), the internal space S may be formed as a sealed internal space surrounded by the wafer chuck 16, the head stage 13, the probe card 18, and the ring-shaped seal member 40, with the ring-shaped seal member 40 in contact with the head stage 13. The suction control unit 46 is an example of the decompression control means of the present invention.

[0034] The head stage 13 (probe card support member) is provided with a mounting hole (card mounting portion) 26 for each measurement portion 14, and a probe card 18 is replaceably mounted in each mounting hole 26. A plurality of spring-pin type elastic probes 28 are formed in the portion of the probe card 18 facing each chip on the wafer W, corresponding to the electrodes of all the chips. Note that, although a configuration in which the probe card 18 is mounted directly on the head stage 13 is shown here, a card holder may be provided on the head stage 13 and the probe card 18 may be mounted in the card holder.

[0035] The tester 20 has a plurality of test heads 22 (22A to 22C) provided for each measurement unit 14. Each test head 22 is placed on the upper surface of the head stage 13. Note that each test head 22 may be held above the head stage 13 by a support mechanism (not shown).

[0036] The terminals of each test head 22 are connected to the terminals of the corresponding probe card 18 via a large number of connection pins of the contact ring 24. As a result, the terminals of each test head 22 are electrically connected to the probes 28.

[0037] Each measurement unit 14 is provided with a support mechanism (chuck fall prevention mechanism) to prevent the wafer chuck 16 from falling off. The support mechanism includes a plurality of holders 30 that hold the wafer chuck 16. The holders 30 are provided at predetermined intervals around the mounting hole 26 of the head stage 13. In this example, four holders 30 are provided at 90-degree intervals around the mounting hole 26 (only two holders 30 are shown in FIGS. 1 and 2).

[0038] The holding portions 30 are configured to be movable (expandable in diameter) so as to move toward and away from each other around the mounting hole 26. A movement mechanism (not shown) for each holding portion 30 is configured, for example, with a ball screw or a motor. When the holding portions 30 are in close proximity to each other (as shown by solid lines in FIGS. 1 and 2), the inner diameter of a passing hole 32 formed in the center of each holding portion 30 is smaller than the diameter of the wafer chuck 16, so that the wafer chuck 16 is held by each holding portion 30. On the other hand, when the holding portions 30 are in a separated state from each other (as shown by dashed lines in FIGS. 1 and 2), the inner diameter of the passing hole 32 is larger than the diameter of the wafer chuck 16, so that the alignment device 50 can supply and retrieve the wafer chuck 16.

[0039] It should be noted that the configuration of the support mechanism can be modified in various ways, such as those described in Japanese Patent Application Laid-Open No. 2010-186998.

[0040] The prober 10 of this embodiment comprises an alignment device 50 that detachably supports the wafer chuck 16 and performs alignment operations on the wafer W held on the wafer chuck 16, and a moving device 100 that moves the alignment device 50 between the measurement sections 14 along the direction in which each measurement section 14 is arranged (the X-axis direction).

[0041] The alignment device 50 includes a movement / rotation mechanism that moves the wafer chuck 16 in the X, Y, Z, and θ directions, and an alignment mechanism that detects the relative positional relationship between the electrodes of each chip on the wafer W held on the wafer chuck 16 and the probes 28 on the probe card 18. The alignment device 50 detachably supports the wafer chuck 16 and performs an alignment operation for the wafer W held on the wafer chuck 16. Specifically, the alignment device 50 detects the relative positional relationship between the electrodes of each chip on the wafer W held on the wafer chuck 16 and the probes 28 on the probe card 18, and based on the detection results, moves the wafer chuck 16 so that the electrodes of the chip to be inspected come into contact with the probes 28. The operation of the alignment device 50 is controlled by an alignment device control unit (not shown). The alignment device control unit is an example of the elevation control means of the present invention.

[0042] The alignment device 50 (Z-axis moving / rotating unit 52) ​​attracts and fixes the wafer chuck 16 by vacuum suction or the like, but any fixing means other than vacuum suction may be used as long as it can fix the wafer chuck 16, and for example, mechanical means may be used for fixing. Also, the alignment device 50 is provided with a positioning member (not shown) so that the relative positional relationship with the wafer chuck 16 is always constant.

[0043] Figures 3 and 4 are diagrams showing a schematic configuration of the alignment apparatus 50. Specifically, Figure 3 is a top perspective view of the alignment apparatus 50, and Figure 4 is a bottom perspective view of the alignment apparatus 50. Note that Figures 3 and 4 show a state in which the wafer chuck 16 is supported on the upper surface of the alignment apparatus 50.

[0044] 1 and 3, the alignment device 50 includes a Z-axis movement / rotation unit (an example of a mechanical lifting means having a wafer chuck fixing unit) 52 that detachably supports the wafer chuck 16 and moves the wafer chuck 16 in the Z-axis direction while rotating about the Z-axis, a probe position detection camera 54 that detects the position of the probe 28, a camera movement mechanism 56 that moves the probe position detection camera 54 in the Z-axis direction, an X-axis moving stage 58 that supports the Z-axis movement / rotation unit 52 and the camera movement mechanism 56 and moves it in the X-axis direction, a Y-axis moving stage 60 that supports the X-axis moving stage 58 and moves it in the Y-axis direction, a base 62 that supports the Y-axis moving stage 60, and an alignment camera 66 supported by a support 64. The movement / rotation mechanism that moves the wafer chuck 16 in the X, Y, and Z-θ directions is composed of the Z-axis movement / rotation unit 52, the X-axis moving stage 58, and the Y-axis moving stage 60. The alignment mechanism is made up of a probe position detection camera 54, an alignment camera 66, a camera movement mechanism 56, and an image processing unit (not shown).

[0045] Two guide rails 68 are provided on the base 62 in parallel with each other, and the Y-axis movable table 60 is movable on these guide rails 68. A drive motor and a ball screw 70 that is rotated by this drive motor are provided in the section between the two guide rails 68 on the base 62. The ball screw 70 is engaged with the bottom surface of the Y-axis movable table 60, and the rotation of the ball screw 70 causes the Y-axis movable table 60 to slide on the guide rails 68.

[0046] Two parallel guide rails 72 that are perpendicular to the two guide rails 68 are provided on the Y-axis movable carriage 60, and the X-axis movable carriage 58 is able to move on these guide rails 72. A drive motor and a ball screw 74 that is rotated by this drive motor are provided between the two guide rails 72 on the Y-axis movable carriage 60. The ball screw 74 is engaged with the bottom surface of the X-axis movable carriage 58, and the rotation of the ball screw 74 causes the X-axis movable carriage 58 to slide on the guide rails 72.

[0047] In addition, a linear motor may be used instead of the ball screw.

[0048] Next, the configuration of the mobile device 100 will be described.

[0049] As shown in FIG. 1, the moving device 100 has a transport pallet 102 on which the alignment device 50 is placed and transported. The transport pallet 102 is configured to be movable between each measurement unit 14 along the X-axis direction. The moving mechanism (horizontal feed mechanism) for moving the transport pallet 102 may be any linear moving mechanism, and may be configured, for example, by a belt drive mechanism, a linear guide mechanism, a ball screw mechanism, or the like. The transport pallet 102 is also provided with an elevating mechanism 106 that raises and lowers the alignment device 50 in the Z-axis direction. The elevating mechanism 106 is configured by a well-known cylinder mechanism, or the like. As a result, the alignment device 50 is configured to be movable between each measurement unit 14 along the X-axis direction and to be able to raise and lower in the Z-axis direction. The moving mechanism for the transport pallet 102 and the elevating mechanism 106 are driven by control of a control means (not shown).

[0050] 5 and 6 are schematic diagrams showing an example of the configuration of the moving device 100. Specifically, Fig. 5 is a plan view of the moving device 100, and Fig. 6 is a side view of the moving device 100.

[0051] 5 and 6, two guide rails 101 are provided on the base 11 in parallel with each other, and the transport pallet 102 is movable on these guide rails 101. In addition, a timing belt 110 is provided on the outer side of the two guide rails 101 in parallel with the guide rails 101, and both ends of the timing belt 110 are fixed to the base 11.

[0052] A drive unit 108 is fixed to the conveying pallet 102. The drive unit 108 has a drive motor 112, a drive pulley 114 connected to the rotary shaft of the drive motor 112, and two idle pulleys 116 arranged around the drive pulley 114. A timing belt 110 is wound around the drive pulley 114, and the tension of the timing belt 110 is adjusted by the idle pulleys 116 arranged on both sides of the drive pulley 114. When the drive motor 112 is driven, the rotation of the drive pulley 114 causes the conveying pallet 102 to slide on the guide rails 101. As a result, the alignment device 50 supported by the conveying pallet 102 moves between each measuring unit 14 along the X-axis direction.

[0053] FIG. 7 is a schematic diagram showing another example of the configuration of the moving device 100. The example of the configuration shown in FIG. 7 uses a ball screw mechanism. That is, a drive unit 108 consisting of a drive motor 118 and a ball screw 120 is provided between two guide rails 101 on the base 11. The ball screw 120 engages with the bottom surface of the transport pallet 102, and rotation of the ball screw 120 causes the transport pallet 102 to slide on the guide rails 101. In this way, the alignment device 50 supported by the transport pallet 102 moves between the measurement units 14 along the X-axis direction.

[0054] In this embodiment, a positioning and fixing device is provided which has a clamp mechanism that positions three locations of the alignment device 50 that has been moved to each measurement unit 14 and detachably grips and fixes it. Specifically, the alignment device 50 has a plurality of positioning pins 130 (130A to 130C) provided at three locations on the base 62. Meanwhile, the base 11 of the housing is provided with a plurality of chuck members (positioning holes) 134 (134A to 134C) that clamp each of the positioning pins 130, one for each measurement unit 14. The clamp mechanism is made up of the positioning pins 130 and the chuck members 134.

[0055] As the clamping mechanism, a well-known clamping mechanism such as a ball lock type or a tapered sleeve type is applied, and therefore a detailed description thereof will be omitted here.

[0056] When the alignment device 50 is to be positioned and fixed after being moved to each measuring unit 14, the lifting mechanism 106 lowers the alignment device 50, and as shown in FIG. 8 , each positioning pin 130 is fitted into and clamped by the corresponding chuck member 134. This positions the alignment device 50 in the horizontal and vertical directions, and the alignment device 50 is fixed to the base 11 with its rotation around the vertical direction restrained. On the other hand, when the alignment device 50 is to be moved to another measuring unit 14, the lifting mechanism 106 raises the alignment device 50, and each positioning pin 130 is released from each chuck member 134. This releases the alignment device 50 from its fixed position, and the alignment device 50 becomes movable to another measuring unit 14 by the moving device 100.

[0057] The prober 10 is equipped with an overall control unit (not shown) that comprehensively controls each unit of the prober 10. The inspection operation described below is performed by the suction control unit 46 and the alignment device control unit controlling each unit under the control of the overall control unit.

[0058] Next, a test operation including a probe contact method using the prober 10 of the first embodiment will be described.

[0059] FIG. 10 shows an example of an inspection operation including a probe contact method using the prober 10 of the first embodiment.

[0060] First, the alignment device 50 is moved to the measurement unit 14 where the inspection will be performed, and after positioning and fixing, the Z-axis movement and rotation unit 52 is raised so that the wafer chuck 16 is detachably supported by the alignment device 50 (Z-axis movement and rotation unit 52). The wafer chuck 16 is supported by the alignment device 50 (Z-axis movement and rotation unit 52) ​​in a fixed state, for example, by vacuum suction. In this state, the suction control unit 46 releases the pressure reduction in the internal space S, and the holding units 30 of the support mechanism are moved away from each other, after which the Z-axis movement and rotation unit 52 lowers the wafer chuck 16.

[0061] Next, the alignment device 50 supporting the wafer chuck 16 is moved to a predetermined transfer position, and the wafer W is loaded onto the wafer chuck 16 by a wafer transfer mechanism (loader) (not shown) and fixed by vacuum suction.

[0062] Next, an alignment operation is performed. Specifically, the X-axis moving stage 58 is moved so that the probe position detection camera 54 is positioned below the probe 28, the camera moving mechanism 56 moves the probe position detection camera 54 in the Z-axis direction to focus, and the probe position detection camera 54 detects the tip position of the probe 28. The position of the tip of the probe 28 in the horizontal plane (X and Y coordinates) is detected by the camera coordinates, and the vertical position is detected by the focal position of the camera. Note that the probe card 18 is usually provided with hundreds to thousands of probes 28, and the tip positions of specific probes are usually detected rather than all of the probes 28.

[0063] Next, with the wafer W to be inspected held on the wafer chuck 16, the X-axis moving stage 58 is moved so that the wafer W is positioned under the alignment camera 66, and the positions of the electrode pads of each chip on the wafer W are detected. It is not necessary to detect the positions of all the electrode pads on one chip, but it is sufficient to detect the positions of some of the electrode pads. Also, it is not necessary to detect the electrode pads of all the chips on the wafer W, but the positions of the electrode pads of some of the chips are detected.

[0064] Next, based on the arrangement of the probes 28 and the arrangement of the electrode pads detected as described above, the wafer chuck 16 is rotated by the Z-axis movement and rotation unit 52 so that the arrangement direction of the probes 28 coincides with the arrangement direction of the electrode pads, and then the wafer chuck 16 is moved in the X-axis and Y-axis directions so that the electrode pads of the chip to be inspected are positioned below the probes 28 (see part (A) of FIG. 10), and the wafer chuck 16 is raised in the Z-axis direction while being detachably supported by the Z-axis movement and rotation unit 52. In other words, the wafer chuck 16 is moved in a direction that shortens the distance between the wafer chuck 16 and the probe card 18.

[0065] Specifically, as shown in part (B) of Figure 10, the ring-shaped seal member 40 provided on the wafer chuck 16 is brought into contact with the head stage 13 (or the probe card 18) to form an internal space S surrounded by the wafer chuck 16, the head stage 13, the probe card 18, and the ring-shaped seal member 40 (or the internal space S surrounded by the wafer chuck 16, the probe card 18, and the ring-shaped seal member 40), and then the electrode pads on the wafer W held by the wafer chuck 16 are brought into contact with the probes 28 provided on the probe card 18 (first contact).

[0066] This contact is achieved by causing the Z-axis moving / rotating unit 52 to raise the wafer chuck 16 to a predetermined position Po1 at a predetermined speed V1 (or acceleration) relative to the probe card 18 (probes 28).

[0067] The Z-axis moving / rotating unit 52 is driven by a motor, and therefore can move the wafer chuck 16 to any position (height) at any speed (or acceleration).

[0068] Position Po1 is a position where the electrode pads on the wafer W come into contact with the probes 28 at a contact pressure Pr1. The velocity V1 (or acceleration) is determined so that when the electrode pads on the wafer W come into contact with the probes 28, the tips of the probes 28 rub against the electrode pads, scraping (breaking) an oxide film, which is an insulator, formed on the electrode pads, thereby establishing an electrical connection between the electrode pads and the probes 28. The velocity V1 is, for example, 20 to 30 mm / sec.

[0069] The above-described first contact can improve the reliability of the electrical contact between the electrode pads on the wafer W and the probes 28.

[0070] During the first contact, to ensure that the oxide film is completely removed at the final contact position, it is important to overdrive the Z-axis movement and rotation unit 52, i.e., to push the wafer chuck 16 beyond the height at which the electrode pads contact the probes 28. Pushing the wafer chuck 16 slightly beyond the final predicted contact position ensures that the oxide film is completely removed, and final contact is made at the point where the oxide film has been completely removed. To achieve this, it is important to mechanically move the wafer chuck 16 to the predetermined contact position while being driven by a motor using the Z-axis movement and rotation unit 52. For example, if the wafer chuck 16 is moved by depressurizing the suction control unit 46 (vacuum pump 44) instead of moving the wafer chuck 16 in the Z direction using the Z-axis movement and rotation unit 52 to remove the oxide film, the wafer chuck 16 may contact the probes 28 while tilted relative to the probe card 18, which can result in incomplete removal of the surface oxide film.

[0071] To completely scrape off the surface oxide film, it is essential to use a motor to drive the mechanical movement and to reliably move the Z-axis movement rotation unit 52 to the specified contact position at a specified speed, and then to push it further from the contact position to reliably scrape off the insulating oxide film on the surface.

[0072] After that, to ensure contact at a predetermined pressure, the wafer chuck 16 is lowered once, and then contact is made again while reducing the pressure using the suction control unit 46 (vacuum pump 44). As a result, the surface oxide film is scraped away, and then the second (or third) contact occurs. This allows for reliable contact at a constant pressure.

[0073] 10(C), the wafer chuck 16 is lowered in the Z-axis direction while being detachably supported by the Z-axis moving and rotating unit 52, and then, as shown in FIG. 10(D), it is raised again to position Po1 (chuck handover height) at speed V1 (or acceleration) in the same manner as above, forming an internal space S, and then the electrode pads on the wafer W held by the wafer chuck 16 are brought into contact with the probes 28 provided on the probe card 18 (second contact). The position Po1 and speed V1 (or acceleration) at the second contact may be the same as or different from the position Po1 and speed V1 (or acceleration) at the first contact.

[0074] The position Po1 at the second contact is a position that is considered so that when the wafer chuck 16 reaches the position Po1 at the second contact, the contact pressure of the electrode pad on the wafer W against the probe 28 becomes a contact pressure Pr1 that is lower than the target contact pressure Pr2 described below (for example, a contact pressure Pr1 that is approximately 70% of the target contact pressure Pr2).

[0075] The second contact described above is expected to remove the oxide film that was not completely removed during the first contact, and therefore the reliability of the electrical contact between the electrode pads on the wafer W and the probes 28 can be further improved.

[0076] After the multiple contact steps (e.g., first contact and second contact) are performed as described above, the wafer chuck 16 and the alignment device 50 (Z-axis moving and rotating unit 52) ​​are released from their fixed position (e.g., fixed by vacuum suction). Then, the suction control unit 46 is activated to depressurize the internal space S with the vacuum pump 44, which serves as the driving source, thereby performing a depressurization step to further reduce the distance between the wafer chuck 16 and the probe card 18 (probes 28). The depressurization step is performed after the final contact step (e.g., second contact) of the multiple contact steps (e.g., first contact and second contact), but is not performed after the remaining contact steps. As a result, as shown in part (E) of FIG. 10 , the wafer chuck 16 is attracted toward the probe card 18 at a velocity V2 relative to the probe card 18 (probes 28) and separated (detached) from the alignment device 50 (Z-axis moving and rotating unit 52). The probe card 18 and the wafer chuck 16 are brought into close contact with each other, and each probe 28 of the probe card 18 comes into contact with its corresponding electrode pad with a uniform contact pressure. The speed V2 is slower than the speed V1 (speed V2<speed V1) because the driving source is the vacuum pump 44, and is, for example, 0.25 [mm / sec].

[0077] The probes 28 on the surface of the probe card 18 are of two types: vertical probes (see FIG. 12A) and cantilever-type probes (see FIG. 12B).

[0078] In the case of a vertical probe, the probe tip presses into the surface of the insulating oxide film, and after the pressing force breaks through the insulating oxide film, a predetermined pressure is applied to establish electrical continuity between the probe and the electrode pad. At this time, the probe position where it breaks through the insulating film due to movement of the wafer chuck 16 in the Z-axis direction and the probe position where it is subsequently depressurized and establishes electrical continuity at a predetermined pressure remain the same. It would be problematic if the probe buckled during pressing, causing the probe tip to move from the breakthrough position, so it is necessary to improve the pressing clearance.

[0079] On the other hand, in the case of a cantilever (cantilevered probe), the pushing of the probe into the electrode pad by moving the chuck in the Z direction corresponds to the probe moving back and forth across the surface of the electrode pad. This causes the probe tip to scratch the pad surface in a line in one direction, which then scrapes away the insulating film on the surface, forming a groove. For example, first, the wafer chuck 16 is moved to a predetermined position with a slightly overdrive force, more than when pressed with a predetermined pressure. The probe tip then scratches the surface of the wafer's electrode pad in a line, forming a linear groove on the electrode pad surface. Then, when the space is depressurized and the probe is pushed in with a predetermined pressure, the probe tip is positioned within the linear groove, ensuring stable electrical continuity between the probe and the electrode pad.

[0080] For these reasons, the cantilever type can stably remove oxide films because linear scratch grooves are formed by moving the wafer chuck 16 in the Z direction, and because the length of the groove is determined by the amount of movement of the wafer chuck 16 in the Z direction, grooves of stable length and depth can be formed. After the scratch grooves are formed, the sealed space is depressurized to bring the wafer chuck 16 into contact with the probe tip at a predetermined pressure, and the probe tip remains in the groove, ensuring stable conductivity between the probe and electrode pad. This makes it extremely advantageous.

[0081] Furthermore, when the movement in the Z direction involves suction of the wafer chuck 16 by a pressure reduction means (suction control unit 46, vacuum pump 44), there are cases in which the wafer chuck 16 is lifted at an angle relative to the probe card 18, making it impossible to reproducibly form the specified scratch grooves in this manner.

[0082] The suction control unit 46 (vacuum pump 44) reduces the pressure in the internal space S until the contact pressure of the electrode pads on the wafer W against the probes 28 reaches a target contact pressure Pr2 (target contact pressure Pr2>contact pressure Pr1). The target contact pressure Pr2 is a contact pressure that is determined to increase the reliability of electrical contact between the electrode pads on the wafer W and the probes 28.

[0083] On the other hand, when the probe card 18 and the wafer chuck 16 are brought into close contact with each other by depressurizing the internal space S with the vacuum pump 44, the Z-axis moving and rotating unit 52 is lowered in the Z-axis direction to remove the wafer chuck 16 from the alignment device 50. Also, to prevent the wafer chuck 16 from falling off, the holding units 30 of the support mechanism are brought into close proximity to each other.

[0084] Next, power and test signals are supplied from the test head 22 to each chip on the wafer W, and signals output from the chips are detected to perform an electrical operation test.

[0085] For the other measurement units 14, the wafer W is loaded onto the wafer chuck 16 in the same manner, and after the alignment and contact operations are completed in each measurement unit 14, simultaneous testing of each chip on the wafer W is performed sequentially. That is, power and test signals are supplied from the test head 22 to each chip on the wafer W, and signals output from the chips are detected to perform an electrical operation test. Note that testing may be performed while the wafer chuck 16 is supported by the alignment device 50.

[0086] When the inspection is completed at each measurement section 14, the alignment device 50 is moved to each measurement section 14 in turn, and the wafer chuck 16 holding the inspected wafer W is collected.

[0087] That is, when inspection is completed at each measurement unit 14, the alignment device 50 is moved to the measurement unit 14 where the inspection has been completed, and after positioning and fixing, the Z-axis moving and rotating unit 52 is raised in the Z-axis direction. After the wafer chuck 16 is supported by the alignment device 50, the vacuum in the internal space S by the suction control unit 46 is released; specifically, atmospheric pressure is introduced into the internal space S. This releases the tight contact between the probe card 18 and the wafer chuck 16. Then, each holding unit 30 of the support mechanism is set to an expanded diameter state. Thereafter, the Z-axis moving and rotating unit 52 lowers the wafer chuck 16 in the Z-axis direction, releasing the positioning and fixing of the alignment device 50. Then, the alignment device 50 is moved to a predetermined transfer position, the fixation of the inspected wafer W is released, and the inspected wafer W is unloaded from the wafer chuck 16. The unloaded inspected wafer W is collected by the transfer mechanism.

[0088] In this embodiment, as shown in FIG. 1, one wafer chuck 16 is assigned to each measurement unit 14, but these multiple wafer chucks 16 may be transferred between multiple measurement units 14.

[0089] As described above, according to this embodiment, the reliability of electrical contact between the electrode pads on the wafer W and the probes 28 can be improved.

[0090] This is because the lifting speed V1 of the wafer chuck 16 driven by the Z-axis moving and rotating unit 52, whose driving source is a motor, is faster than the pulling speed V2 of the wafer chuck 16, whose driving source is a vacuum pump 44 (V1>V2), and at this faster speed V1, the electrode pad on the wafer W comes into contact with the probe 28 provided on the probe card 18, and the tip of the probe 28 rubs against the electrode pad, scraping (breaking) the oxide film, which is an insulator formed on the electrode pad, and an electrical connection is established between the electrode pad and the probe 28.

[0091] Furthermore, according to this embodiment, contact (contact at speed V1) between the electrode pads on the wafer W and the probes 28 is performed multiple times (e.g., first contact and second contact), which improves the reliability of electrical contact between the electrode pads on the wafer W and the probes 28 compared to when the electrode pads on the wafer W and the probes 28 contact each other only once.

[0092] Furthermore, according to this embodiment, the contact pressure of the electrode pads on the wafer W against the probes 28 can be easily set to the target contact pressure Pr2 in the depressurization step.

[0093] This is because in the final contact process (e.g., second contact), the contact pressure of the electrode pad on the wafer W against the probe 28 is set to a contact pressure Pr1 that is lower than the target contact pressure Pr2 (e.g., a contact pressure Pr1 that is about 70% of the target contact pressure Pr2), and then in the depressurization process, the internal space S is depressurized until the contact pressure of the electrode pad on the wafer W against the probe 28 becomes the target contact pressure Pr2.

[0094] It is also possible to set the contact pressure of the electrode pads on the wafer W against the probes 28 to a target contact pressure Pr2 in the final contact step (e.g., second contact), and then depressurize the internal space S in the depressurization step so that the contact pressure of the electrode pads on the wafer W against the probes 28 maintains the target contact pressure Pr2 in the final contact step. However, it is difficult to control the depressurization of the internal space S in this way so as to maintain the target contact pressure Pr2 in the final contact step.

[0095] In contrast to this, as in the former case, first, in the final contact process, a contact pressure Pr1 lower than the target contact pressure Pr2 is set, and then, in the depressurization process, the internal space S is depressurized and controlled until it reaches the target contact pressure Pr2, so that the contact pressure of the electrode pad on the wafer W against the probe 28 in the depressurization process can easily be set to the target contact pressure Pr2.

[0096] In addition, in this embodiment, it is also possible to preferably employ an aspect in which the fixation between the wafer chuck 16 and the alignment device 50 (Z-axis moving and rotating unit 52) ​​is released at a timing (second timing) later than the timing (first timing) at which the depressurization of the internal space S begins. That is, after multiple contact processes (e.g., first contact and second contact) are performed, the suction control unit 46 is activated to start depressurizing the internal space S using the vacuum pump 44, which is the driving source. Then, when the internal pressure of the internal space S reaches a predetermined set pressure (target pressure), the fixation between the wafer chuck 16 and the alignment device 50 (Z-axis moving and rotating unit 52) ​​(e.g., fixation by vacuum suction) is released. Note that this operation is realized by the suction control unit 46 and the alignment device control unit working together under the control of the overall control unit, which functions as the timing control means of the present invention.

[0097] According to the above embodiment, the wafer chuck 16 is released from its fixed position after the decompression of the internal space S begins, so that the unstable state (free state) in which the wafer chuck 16 is not fixed to either side at the moment of switching between these processes is eliminated, making it possible to stably transfer the wafer chuck 16 and achieving good contact between the electrode pads on the wafer W and the probes 28.

[0098] Furthermore, in the above-described embodiment, a throttle valve for controlling the flow rate of gas is preferably provided in the suction path for suction-adhering and fixing the wafer chuck 16 to the alignment device 50 (Z-axis movement and rotation unit 52). According to this embodiment, even if the wafer chuck 16 is released from its fixed position after the depressurization of the internal space S has begun, the negative pressure on the lower side of the wafer chuck 16 (the Z-axis movement and rotation unit 52 side) is not suddenly lost. Therefore, while the wafer chuck 16 is being pulled from both the upper and lower sides (i.e., both sides between the Z-axis movement and rotation unit 52 and the probe card 18), the constraint from the lower side (i.e., the fixing force due to suction from the Z-axis movement and rotation unit 52) ​​is not suddenly lost. This prevents the wafer chuck 16 from suddenly moving, thereby reducing the occurrence of abnormal vibrations and abnormal contact. Therefore, the wafer chuck 16 can be prevented from suddenly separating from the alignment device 50 (Z-axis movement and rotation unit 52) ​​when the wafer chuck 16 is released from its fixed position after the depressurization of the internal space S has begun, thereby enabling the wafer chuck 16 to be transferred more stably.

[0099] As a modification of this embodiment, the following configuration can also be adopted. This also applies to other embodiments described later.

[0100] In the present embodiment, an example has been described in which the contact step is performed twice and the depressurization step is performed after the final contact step, but the present invention is not limited to this, and the contact step may be performed only once and then the depressurization step may be performed.Furthermore, the contact step may be performed three or more times and then the depressurization step may be performed after the final contact step.

[0101] Furthermore, in this embodiment, a configuration in which three measurement units 14 are arranged along the X-axis direction is shown, but the number and arrangement of the measurement units 14 are not particularly limited, and for example, multiple measurement units 14 may be arranged two-dimensionally in the X-axis and Y-axis directions.

[0102] Alternatively, a multi-tier configuration may be used in which measurement unit groups each consisting of a plurality of measurement units 14 are stacked in the Z-axis direction. For example, the configuration example shown in FIG. 9 is a configuration in which measurement unit groups 15 (15A to 15C) each consisting of four measurement units 14 are stacked in three tiers in the Z-axis direction. In this configuration, an alignment device 50 is provided for each measurement unit group 15, and the alignment device 50 is shared between the measurement units 14 in the same measurement unit group 15. Note that the alignment device 50 may be shared by all measurement units 14. With such a configuration, the footprint (installation area) of the entire device can be reduced, the processing capacity per unit area can be increased, and costs can be reduced.

[0103] (Second embodiment) Next, a second embodiment will be described. Below, the description of the parts common to the above-mentioned embodiments will be omitted, and the description will focus on the characteristic parts of this embodiment.

[0104] FIG. 11 is a diagram showing an example of an inspection operation including a probe contact method using the prober 10 of the second embodiment.

[0105] The second embodiment has a different configuration from the wafer chuck 16 of the first embodiment. That is, the wafer chuck 16A of the second embodiment corresponds to the wafer chuck 16 shown in parts (A) to (E) of Fig. 10, except that it is provided with a communication hole (an example of a communication path) 16Aa that connects the internal space S with the external environment and is opened and closed by a shutter means 48. The communication hole 16Aa is provided inside the wafer chuck 16A, and penetrates a region of the top surface of the wafer chuck 16A near the outer periphery where the wafer W is not placed, and the side surface.

[0106] As shown in part (C) of Figure 11, the internal space S becomes an airtight space when the communicating hole 16Aa is closed by the shutter means 48, and on the other hand, as shown in part (A) of Figure 11, it becomes an unairtight space when the communicating hole 16Aa is opened by the shutter means 48.

[0107] The shutter means 48 is a means for opening and closing the communication hole 16Aa, which connects the internal space S with the external environment, to make the internal space S a sealed space or a non-sealed space, and is composed of, for example, a shutter main body 48a and a shutter control means (not shown) that moves the shutter main body 48a to a position where the communication hole 16Aa is opened (see part (A) of FIG. 11) or a position where it is closed (see part (C) of FIG. 11). The shutter control means may be a known device (neither of which is shown) such as a motor connected to the shutter main body 48a and a controller that controls the motor. Note that the communication hole 16Aa and the shutter means 48 may be provided in the head stage 13 or the probe card 18, rather than in the wafer chuck 16A.

[0108] Next, a test operation including a probe contact method using the prober 10 of the second embodiment will be described.

[0109] The inspection operation using the prober 10 of the second embodiment is basically the same as that of the first embodiment, but differs in the following respects.

[0110] That is, in each contact step in which the first contact and the second contact are performed, the difference is that the internal space S is kept unsealed by opening the communication hole 16Aa with the shutter means 48 at least from the time when the ring-shaped sealing member 40 is brought into contact with the head stage 13 (or the probe card 18) (see part (A) of Figure 11) until the electrode pad on the wafer W is brought into contact with the probe 28 (see part (B) of Figure 11).

[0111] For example, until each contact process in which first contact and second contact are performed is completed and the fixation (e.g., fixation by vacuum suction) between the wafer chuck 16A and the alignment device 50 (Z-axis moving and rotating part 52) ​​is released, the communication hole 16Aa is opened and the internal space S is kept in an unsealed state.

[0112] Then, at the timing when the fixation (for example, fixation by vacuum suction) between the wafer chuck 16A and the alignment device 50 (Z-axis moving and rotating part 52) ​​is released, the communication hole 16Aa is closed to seal the internal space S, and the internal space S is depressurized in the depressurization step, as shown in part (C) of Fig. 11. Other than that, the present embodiment is the same as the first embodiment.

[0113] In the first embodiment, the internal space S is sealed in each contact step in which the first contact and the second contact are made, and therefore the sealed space (air inside) is compressed at each contact, and the reaction force from this compression acts as a load when the wafer chuck 16A is raised, which may slow down the rate at which the electrode pads on the wafer W are raised relative to the probes 28. As a result, there is a risk that the oxide film, which is an insulator formed on the electrode pads, may not be sufficiently scraped (broken).

[0114] In contrast, according to the second embodiment, the internal space S is not sealed during each contact step in which the first contact and the second contact are made, so that the sealed space (air inside) is compressed during each contact, and the reaction force from this compression is prevented from becoming a load when the wafer chuck 16 is raised, and the rate at which the electrode pads on the wafer W are raised relative to the probes 28 is prevented from slowing down. As a result, it can be expected that the oxide film, which is an insulator formed on the electrode pads, will be sufficiently scraped (broken).

[0115] In the second embodiment, similarly to the first embodiment, it is also possible to preferably employ an aspect in which the fixation between the wafer chuck 16 and the alignment device 50 (Z-axis moving and rotating unit 52) ​​is released at a timing (second timing) later than the timing (first timing) at which the pressure reduction of the internal space S is started. In addition, it is more preferable that a throttle valve for controlling the flow rate of gas is provided in a suction path for suction-fixing the wafer chuck 16 to the alignment device 50 (Z-axis moving and rotating unit 52).

[0116] (Third embodiment) Next, a third embodiment will be described. Below, the description of the parts common to the above-mentioned embodiments will be omitted, and the description will focus on the characteristic parts of this embodiment.

[0117] In the first embodiment, after the final contact step (e.g., second contact), a decompression step is performed to decompress the sealed internal space S surrounded by the wafer chuck 16, the probe card 18, and the ring-shaped seal member 40, thereby pulling the wafer chuck 16 toward the probe card 18. At this time, the movement of the wafer chuck 16 in the horizontal direction (X and Y directions) is restricted only by the contact pressure between the electrode pads on the wafer W and the probes 28 (i.e., the needle pressure of the probe card 18). Therefore, if an external disturbance such as vibration is applied during the decompression step, the wafer chuck 16 is likely to be displaced or tilted in the horizontal direction, and the wafer chuck 16 may not rise straight in the vertical direction (Z direction).

[0118] Therefore, in the third embodiment, in order to improve the stability of movement of the wafer chuck 16 in the depressurizing step, the following configuration is provided.

[0119] FIG. 13 is a schematic diagram showing the configuration of a prober 10 according to the third embodiment.

[0120] 13, the prober 10 of the third embodiment includes a chuck guide mechanism 200 that guides the wafer chuck 16B in the Z direction (vertical direction) as a configuration for preventing misalignment and tilt of the wafer chuck 16B in the X and Y directions (horizontal directions) when the wafer chuck 16B is drawn toward the probe card 18 by depressurizing the internal space S (see FIG. 14). The chuck guide mechanism 200 is an example of a guide means.

[0121] A plurality of chuck guide mechanisms 200 are arranged in parallel around the periphery of the wafer chuck 16B, specifically, the outer periphery of the chuck guide holder 17 integrated with the wafer chuck 16B. Before the internal space S is depressurized to draw the wafer chuck 16B toward the probe card 18, the chuck guide mechanisms 200 fix a chuck guide 204 (described later) to the head stage 13 by vacuum suction or the like, thereby functioning as a guide mechanism for restricting horizontal movement of the wafer chuck 16B while moving it parallel to the Z direction. Therefore, at least three chuck guide mechanisms 200 are provided on the wafer chuck 16B (chuck guide holder 17) at different positions in the horizontal directions (X and Y directions) perpendicular to the movement direction (Z direction) of the wafer chuck 16B. Although not shown in the present example, four chuck guide mechanisms 200 are provided on the chuck guide holder 17 at equal intervals (every 90 degrees) around the periphery (only two are shown in FIG. 13 ).

[0122] Here, the configuration of the chuck guide mechanism 200 will be described in detail.

[0123] The chuck guide mechanism 200 has a bearing portion 202 formed on the chuck guide holding portion 17, and a chuck guide (guide shaft portion) 204 configured to be movable in the Z direction (vertical direction) while movement in the X and Y directions (horizontal directions) is restricted by the bearing portion 202. The bearing portion 202 is configured by, for example, a ball bearing or the like.

[0124] The chuck guide 204 is rotatably supported by the bearing portion 202, and is provided at its upper portion with a fixed portion 206 that detachably fixes the chuck guide 204 to the head stage 13. A ring-shaped seal member (hereinafter referred to as "chuck guide seal rubber") 208 is provided on the upper surface of the fixed portion 206, and inside the chuck guide seal rubber 208 are provided a suction port (not shown) that is connected to a suction means (not shown), and a clearance holding member 210 that keeps a constant distance (gap) between the fixed portion 206 and the head stage 13. The shape of the clearance holding member 210 is not particularly limited as long as it can keep a constant gap between the fixed portion 206 and the head stage 13.

[0125] Next, an inspection operation including a probe contact method using the prober 10 of the third embodiment will be described with reference to Fig. 14. Fig. 14 is a diagram showing an example of an inspection operation including a probe contact method using the prober 10 of the third embodiment.

[0126] First, similarly to the first embodiment, the wafer chuck 16B is raised and lowered in the Z direction by the Z-axis moving and rotating unit 52, thereby performing multiple contact steps (e.g., first contact and second contact) (see parts (A) to (D) in FIG. 14). After the final contact step (e.g., second contact) is performed, the chuck guide seal rubber 208 is in contact with the head stage 13.

[0127] Next, when the internal space Q formed between the chuck guide seal rubber 208, the head stage 13, and the fixed portion 206 is depressurized by a suction means (not shown), the chuck guide 204 rises upward (toward the head stage 13), and the fixed portion 206 of the chuck guide 204 is fixed to the head stage 13 by suction (see part (E) of FIG. 14). At this time, the clearance holding member 210 ensures a certain gap between the head stage 13 and the chuck guide 204, thereby preventing excessive suction by the fixed portion 206 of the chuck guide 204 and preventing tilting of the chuck guide 204 fixed to the head stage 13. Then, when the wafer chuck 16B is drawn toward the probe card 18 by depressurizing the internal space S, the wafer chuck 16B is guided in the Z direction by the chuck guide 204 fixed to the head stage 13, while its movement in the X and Y directions is restricted (see part (F) of FIG. 14).

[0128] As described above, according to the third embodiment, the chuck guide mechanism 200 is provided, which guides the wafer chuck 16B in the Z direction along the chuck guide 204 while the chuck guide 204 (fixing portion 206) is fixed to the head stage 13 by vacuum suction or the like, and therefore, when the wafer chuck 16B is drawn toward the probe card 18 by reducing the pressure in the internal space S, it is possible to prevent the wafer chuck 16B from shifting or tilting in position. This makes it possible to prevent tilting or shifting in position due to an uneven load caused by the components of the wafer chuck 16B, and to stably transfer the wafer chuck 16B while maintaining the parallelism between the probe card 18 and the wafer W, thereby enabling good contact to be achieved between the electrode pads on the wafer W and the probes 28.

[0129] In the third embodiment, an adsorption method such as vacuum adsorption is shown as a fixing method for the chuck guide mechanism 200, but various well-known methods can be used as long as they can fix the chuck guide 204 to the head stage 13 in a detachable manner, and mechanical methods such as clamps can also be used.

[0130] In addition, in the third embodiment, a configuration is shown in which the chuck guide mechanism 200 is provided on the wafer chuck 16B side and the chuck guide 204 (fixed portion 206) is adsorbed to the head stage 13 side, but a configuration in which the chuck guide mechanism 200 is provided on the head stage 13 side and the chuck guide 204 (fixed portion 206) is adsorbed to the wafer chuck 16B side may also be used.

[0131] The prober and probe contact method of the present invention have been described in detail above, but the present invention is not limited to the above examples, and various improvements and modifications may be made within the scope of the present invention. [Explanation of symbols]

[0132] 10 Prober 11 Base 12 Side panel 13 Head Stage 14, 14A, 14B, 14C measurement section 15 Measuring unit group 15A, 15B, 15C measurement unit group 16, 16A, 16B wafer chuck 16Aa communication hole 17 Chuck guide holding part 18 Probe Card 20 Tester 22, 22A, 22B, 22C test head 24 Contact Ring 26 Mounting hole 28 probes 30 Holding part 32 Passing hole 40 Ring-shaped seal member 42 Suction port 43 Suction path 44 Vacuum Pump 46 Suction control unit 48 Shutter means 48a Shutter body 50 Alignment device 52 Z-axis moving and rotating part 54 Probe position detection camera 56 Camera movement mechanism 58 X-axis moving table 60 Y-axis moving table 62 base 64 Pillar 66 Alignment Camera 68 Guide Rail 70 Ball screw 72 Guide rail 74 Ball screw 100 Mobile Device 101 Guide rail 102 Transport Pallet 106 Lifting mechanism 108 Drive Unit 110 Timing belt 112 drive motor 114 Drive pulley 116 Idle pulley 118 Drive motor 120 ball screw 130, 130A, 130B, 130C Locating Pin 134, 134A, 134B, 134C chuck members 200 Chuck guide mechanism 202 Bearing section 204 Chuck Guide 206 Fixed part 208 Chuck guide seal rubber 210 Clearance retaining member Q, S internal space W wafer

Claims

[Claim 1] a wafer chuck for holding the wafer; a probe card having a probe provided so as to face the wafer chuck; a mechanical lifting means for detachably supporting the wafer chuck, for moving the wafer chuck up and down, and for moving the wafer chuck toward the probe card so that the probes come into contact with the electrode pads on the wafer; a decompression drawing means for forming a decompression space between the probe card and the wafer chuck after the probes and the electrode pads are brought into contact with each other by the mechanical lifting means, and drawing the wafer chuck toward the probe card by decompressing the decompression space; Equipped with the probe is a cantilever type, and the contact pressure between the probe and the electrode pad caused by the mechanical lifting means is 70% of the contact pressure caused by the pressure reducing and pulling means; Prover.

Images