Vapor deposition mask manufacturing apparatus and vapor deposition mask manufacturing method

Abstract

To provide a device for manufacturing a vapor deposition mask and a method for manufacturing a vapor deposition mask which achieve reduced defects.SOLUTION: This device for manufacturing a vapor deposition mask has a support base material having a first surface for supporting a to-be-plated member, a first support member and a second support member provided so as to surround the outer periphery of the to-be-plated member on the first surface, and an electrode part provided so as to be set apart from the first surface by a prescribed height. The first support member has a first wall part provided on the first surface, and a first eave part projecting toward the inside of the first surface at the upper section of the first wall part. The second support member has a second wall part provided on the first surface, and a second eave part projecting toward the inside of the first surface at the upper section of the second wall part. The first wall part has a first portion in which the height decreases to a prescribed height from the first surface, and a first step part formed on the inner face of the first wall part due to the first portion. The second wall part has a second step part formed by the electrode part projecting from the inner face of the second wall part by a prescribed height from the first surface.SELECTED DRAWING: Figure 9

Description

[Technical Field]

[0001] An embodiment of the present invention relates to an apparatus for manufacturing a deposition mask and a method for manufacturing a deposition mask using the same. [Background technology]

[0002] In recent years, organic EL display devices using organic EL elements as light-emitting elements have become known. The organic EL element has an anode electrode, a cathode electrode, and a layer containing an organic EL material (hereinafter referred to as an "organic EL layer") provided between the anode electrode and the cathode electrode. The organic EL layer includes functional layers such as a light-emitting layer, an electron injection layer, and a hole injection layer. The organic EL element emits light by applying a voltage to each of the anode electrode and the cathode electrode and passing a current between the anode electrode and the cathode electrode.

[0003] For example, a vacuum deposition method is used to form the light-emitting layer of an organic EL element. The vacuum deposition method is a method in which a deposition material is heated by a heater in a vacuum to sublimate it and deposit (deposit) it on the surface of a substrate. By using the vacuum deposition method, a thin film of the deposition material can be formed on the surface of the substrate. Furthermore, in the vacuum deposition method, a mask (deposition mask) having a pattern of many fine openings is used to form a high-definition thin film pattern.

[0004] An electro-fine forming mask (EFM) manufactured by electroforming (electroforming) technology using electroplating (plating method) is one type of deposition mask. For example, Patent Document 1 discloses a method for manufacturing a deposition mask by electroforming technology. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Publication No. 2017-210633 Summary of the Invention [Problem to be solved by the invention]

[0006] For example, if an organic EL display device is manufactured using a damaged deposition mask, the light-emitting layer will not be deposited properly on the organic EL elements corresponding to the damaged portion of the deposition mask. For example, if a deposition mask has a defect, such as a fine opening pattern being blocked due to a manufacturing defect, the light-emitting layer will not be deposited on the organic EL elements of an organic EL display device manufactured using a deposition mask containing the defect. Organic EL elements without the light-emitting layer will not emit light, resulting in display defects. Furthermore, if a deposition mask has a manufacturing defect, such as opening patterns that should be separated being connected, the organic EL elements of an organic EL display device manufactured using the defective deposition mask will have the light-emitting layer formed in an area where it should not be formed, resulting in poor element isolation. Therefore, in the manufacture of deposition masks, there is a need for a technology that not only accurately forms multiple fine opening patterns but also prevents defects. There is also a need for an apparatus (deposition mask manufacturing apparatus) that manufactures deposition masks that do not generate defects.

[0007] An object of one embodiment of the present invention is to provide a deposition mask manufacturing apparatus and a deposition mask manufacturing method that can suppress defects. [Means for solving the problem]

[0008] A manufacturing apparatus for a deposition mask according to an embodiment of the present invention includes a supporting base material having a first surface that supports a member to be plated, a first supporting member and a second supporting member that are provided on the first surface so as to surround an outer periphery of the member to be plated, and an electrode portion that is provided at a predetermined height from the first surface, wherein the first supporting member has a first wall portion that is provided on the first surface and a first eave portion that protrudes toward an inside of the first surface from an upper portion of the first wall portion, and the second supporting member has a second wall portion that is provided on the first surface and a first eave portion that protrudes from an upper portion of the second wall portion toward an inside of the first surface. and a second overhang portion protruding toward the inside of the first surface, the first wall portion having a first portion whose height decreases from the first surface to the predetermined height, and a first step portion formed on the inner surface of the first wall portion by the first portion, the second wall portion having a second step portion formed on the inner surface of the second wall portion by the electrode portion protruding from the first surface at the predetermined height, and the first support member and the second support member are arranged so that the plated member can be sandwiched between the first step portion, the second step portion, and the first surface.

[0009] A method for manufacturing a deposition mask according to one embodiment of the present invention includes forming the first resist mask with a first film thickness in an inner region of the second surface, the deposition mask including a supporting base material having a first surface that supports a member to be plated, a first supporting member and a second supporting member provided on the first surface so as to surround an outer periphery of the member to be plated, and an electrode portion provided at a predetermined height from the first surface, the first supporting member having a first wall portion provided on the first surface and a first eave portion that protrudes toward the inside of the first surface at an upper part of the first wall portion, the second supporting member having a second wall portion provided on the first surface and a second eave portion that protrudes toward the inside of the first surface at an upper part of the second wall portion, the first wall portion having a first portion whose height decreases from the first surface to the predetermined height, and a first step portion formed on an inner surface of the first wall portion by the first portion, and the second wall portion is formed on the inner surface of the second wall portion by the electrode portion protruding from the first surface at the predetermined height. the first support member and the second support member are arranged so that the member to be plated can be sandwiched between the first step portion, the second step portion, and the first surface; the first overhang portion and the second overhang portion cover a part of the second surface of the member to be plated; the length over which the second overhang portion covers the second surface is longer than the length over which the first overhang portion covers the member to be plated; in a cross-sectional view, a distance between an end of the second overhang portion and an end of a first resist mask provided on the second surface is equal to a distance between the end of the first overhang portion and an end of the first resist mask; the distance between the second overhang portion and the second surface is 10 mm; and the distance between the end of the second overhang portion and an end of the first resist mask is 4 mm. [Brief explanation of the drawings]

[0010] [Figure 1] FIG. 1 is a schematic plan view of a deposition mask unit fabricated by a method according to one embodiment of the present invention. [Figure 2] The cross-sectional structure taken along the line A1-A2 shown in FIG. [Figure 3] 3(A), 3(B), and 3(C) are schematic cross-sectional views showing a method for manufacturing a deposition mask according to one embodiment of the present invention. [Figure 4] 4(A) and 4(B) are schematic cross-sectional views showing a method for manufacturing a deposition mask according to one embodiment of the present invention. [Figure 5] FIG. 1 is a schematic plan view showing an apparatus for manufacturing a deposition mask according to an embodiment of the present invention. [Figure 6] FIG. 1 is a schematic plan view showing an apparatus for manufacturing a deposition mask according to an embodiment of the present invention. [Figure 7] 7A shows a cross-sectional structure taken along line B1-B2 in FIG. 6, and FIG. 7B shows a cross-sectional structure taken along line C1-C2 in FIG. [Figure 8] 1A and 1B are schematic plan views showing an apparatus and a method for manufacturing a deposition mask according to an embodiment of the present invention. [Figure 9] 8A shows a cross-sectional structure taken along line D1-D2 in FIG. 8, and FIG. 8B shows a cross-sectional structure taken along line E1-E2 in FIG. [Figure 10] 10 is a graph showing the relationship between the height of the overhanging portion and the film thickness of the outermost periphery of the release layer when a plating process is performed using the apparatus for manufacturing a deposition mask according to one embodiment of the present invention. [Figure 11] 11(A) and 11(B) are schematic cross-sectional views showing a method for manufacturing a deposition mask according to one embodiment of the present invention. [Figure 12] 12(A) and 12(B) are schematic cross-sectional views showing a method for manufacturing a deposition mask according to one embodiment of the present invention. [Figure 13] 13(A), 13(B), and 13(C) are schematic cross-sectional views showing a method for manufacturing a deposition mask according to one embodiment of the present invention. [Figure 14] 14(A) and 14(B) are schematic cross-sectional views showing a method for manufacturing a deposition mask according to one embodiment of the present invention. [Figure 15] 1A to 1C are schematic cross-sectional views illustrating a method for manufacturing a deposition mask unit according to one embodiment of the present invention. [Figure 16] 16(A) and 16(B) are schematic cross-sectional views showing a method for manufacturing a deposition mask unit according to one embodiment of the present invention. [Figure 17] 17(A) and 17(B) are schematic cross-sectional views showing a method for manufacturing a deposition mask unit according to one embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0011] Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention can be implemented in many different forms, and should not be construed as being limited to the description of the embodiments exemplified below. For clarity of explanation, the drawings may show the width, thickness, shape, etc. of each part schematically compared to the actual form, but these are merely examples and do not limit the interpretation of the present invention. Furthermore, in this specification and each drawing, elements similar to those previously described with reference to the previous drawings may be designated by the same reference numerals (or numbers followed by a, b, A, B, etc.), and detailed descriptions may be omitted as appropriate. Furthermore, the letters "first" and "second" attached to each element are convenient labels used to distinguish each element and have no further meaning unless otherwise specified.

[0012] In this specification, when a component or region is described as being "on (or under)" another component or region, unless otherwise specified, this includes not only the case where it is directly above (or directly under) the other component or region, but also the case where it is above (or under) the other component or region, i.e., the case where another component is included between the component or region and above (or under) the other component or region.

[0013] Furthermore, in this specification, unless otherwise specified, expressions such as "α includes A, B, or C," "α includes any one of A, B, and C," and "α includes one selected from the group consisting of A, B, and C" do not exclude cases where α includes multiple combinations of A to C. Furthermore, these expressions do not exclude cases where α includes other elements.

[0014] <1. Structure of the deposition mask unit 100> Fig. 1 is a schematic plan view of a deposition mask unit 100. Fig. 2 is a cross-sectional view taken along lines A1 and A2 shown in Fig. 1. The configuration of the deposition mask unit 100 shown in Figs. 1 and 2 is an example, and the configuration of the deposition mask unit 100 is not limited to the configuration shown in Figs. 1 and 2.

[0015] 1, the deposition mask unit 100 includes at least one deposition mask 102, a support frame 108 surrounding the at least one deposition mask 102, and a connection portion 106 connecting the support frame 108 and the at least one deposition mask 102. In the embodiment shown in FIG. 1, the at least one deposition mask 102 is made up of multiple deposition masks 102, and the multiple deposition masks 102 are fixed to the support frame 108 via the connection portions 106, respectively.

[0016] As shown in the enlarged inset view of FIG. 1 , the deposition mask 102 has a plurality of openings 103. In the deposition mask 102, the plurality of openings 103 are arranged in a predetermined region to form one mask pattern 104. The deposition mask 102 may include a plurality of mask patterns 104. The deposition mask 102 is connected to connecting portions 106 in regions where the mask patterns 104 are not formed, and is held by a support frame 108.

[0017] As shown in FIG. 2, the deposition mask 102 is a plate-like member, and the multiple openings 103 are through-holes that penetrate the plate-like member. As will be described in detail later, the deposition mask 102 is formed using a metal material. A support frame 108 is provided to support the deposition mask 102 in a flat plate shape. A lattice-shaped frame may be provided on the support frame 108 to hold the multiple deposition masks 102. In the deposition mask unit 100, the support frame 108 corresponds to the size of the mother glass substrate, the mask patterns 104 are arranged to correspond to the individual display panels to be fabricated in the mother glass substrate, and the multiple openings 103 are arranged to correspond to the arrangement of pixels in the display panels.

[0018] The connecting portions 106 connect the deposition mask 102 and the support frame 108 and fix them to each other. Therefore, although the support frame 108 does not directly contact the deposition mask 102, the connecting portions 106 contact the deposition mask 102 in non-opening portions of the deposition mask 102 (areas where the mask pattern 104 is not formed) and also contact the side surfaces of the support frame 108.

[0019] Although the example shown in FIGS. 1 and 2 illustrates a configuration in which a plurality of deposition masks 102 are held by the support frame 108, an embodiment of the present invention is not limited thereto. For example, the embodiment may have a configuration in which one deposition mask 102 is held by the support frame 108 via a connection portion 106.

[0020] A deposition mask unit 100 according to one embodiment of the present invention is used in a process for forming organic EL elements in a display panel manufacturing process. Specifically, it is used in a process for forming a light-emitting layer of the organic EL element by vacuum deposition. In the process for forming the light-emitting layer, the deposition region on the mother glass substrate side is arranged to align with the mask pattern 104 on the deposition mask 102 side, and the deposition material passes through the multiple openings 103 and is deposited in the deposition region.

[0021] The deposition mask 102 and the connecting portion 106 are formed using a zero-valent metal material such as nickel (Ni), copper (Cu), titanium (Ti), or chromium (Cr). That is, the release layer 116 and the connecting portion 106 include a metal film. The deposition mask 102 and the connecting portion 106 may have the same material composition. Like the deposition mask 102 and the connecting portion 106, the support frame 108 is also formed using a zero-valent metal material such as nickel (Ni), iron (Fe), cobalt (Co), chromium (Cr), or manganese (Mn). For example, the material of the support frame 108 may be an alloy containing iron (Fe) and chromium (Cr), or an alloy of iron (Fe), nickel (Ni), and manganese (Mn), and the alloy may also contain carbon (C).

[0022] 2. Method for manufacturing deposition mask unit 100 5 and 6 are schematic plan views showing the manufacturing method of the deposition mask 102 and the deposition mask manufacturing apparatus 150. FIG. 7(A) is a cross-sectional structure along B1-B2 shown in FIG. 6, and FIG. 7(B) is a cross-sectional structure along C1-C2 shown in FIG. 6. FIG. 8 is a schematic cross-sectional view showing the manufacturing method of the deposition mask 102 and the deposition mask manufacturing apparatus 150. FIG. 9(A) is a cross-sectional structure along D1-D2 shown in FIG. 8, and FIG. 9(B) is a cross-sectional structure along E1-E2 shown in FIG. 8. FIG. 10 is a graph showing the relationship between the height of the overhanging portion and the film thickness of the outermost periphery of the peeling layer 116 when plating is performed using the deposition mask manufacturing apparatus 150. 3(A) to 17(B) are merely examples, and the manufacturing method of the deposition mask 102 or the configuration of the deposition mask manufacturing apparatus 150 is not limited to the configurations shown in Fig. 3(A) to 17(B). Descriptions of configurations that are the same as or similar to those in Fig. 1 and Fig. 2 will be omitted here.

[0023] FIG. 3A illustrates a step of forming a first resist mask 114 on the second surface 110A of the first support substrate 110. In one embodiment of the present invention, the first support substrate 110 is made of metal. The first support substrate 110 is formed using a metal material such as copper (Cu), aluminum (Al), titanium (Ti), iron (Fe), nickel (Ni), cobalt (Co), chromium (Cr), molybdenum (Mo), manganese (Mn), or an alloy thereof. The alloy may be, for example, an alloy containing iron (Fe) and chromium (Cr), or an alloy of iron (Fe), nickel (Ni), and manganese (Mn), and the alloy may also contain carbon (C). For example, the first support substrate 110 may be formed of stainless steel containing iron (Fe) as a main component and chromium (Cr) and nickel (Ni). Although one embodiment of the present invention illustrates an example in which the first support substrate 110 is made of metal, the first support substrate 110 is not limited to being made of metal. For example, the first support substrate 110 may be formed from an insulating material such as glass, quartz, ceramics, plastic, etc. In one embodiment of the present invention, the first support substrate 110 may be referred to as a member to be plated.

[0024] The first resist mask 114 is formed by photolithography using a photosensitive resin material. The photosensitive resin material may be a coating-type photoresist or a dry film resist (DFR). When the deposition mask unit 100 shown in FIG. 1 has a deposition mask unit 100, the first resist mask 114 has a frame shape that surrounds the deposition masks 102 (all of the deposition masks 102) when the deposition masks 102 are arranged.

[0025] FIG. 3B shows a step of forming the release layer 116. The step of forming the release layer 116 will be described in detail later. The release layer 116 is formed on the second surface 110A of the first support substrate 110 on which the first resist mask 114 is formed, in a region exposed from the frame-shaped first resist mask. Specifically, by using the deposition mask manufacturing apparatus 150, the release layer 116 is provided on both the side where the first step portion 156A is provided and the side opposite to the side where the first step portion 156A is provided, with respect to the first resist mask 114 provided on the second surface 110A. That is, the release layer 116 is provided on a part of the second surface 110A on which the first resist mask 114 is not provided. The release layer 116 is formed using, for example, the same metal material as the material forming the deposition mask 102. That is, the release layer 116 has a metal film. The release layer 116 is formed using a zero-valent metal material such as nickel (Ni), copper (Cu), titanium (Ti), or chromium (Cr). The release layer 116 can be formed using a plating method. For example, the release layer 116 is produced on the first support substrate 110 by nickel plating. When the release layer 116 is formed using a plating method, the first support substrate 110 may be cleaned and a release agent may be applied to the second surface 110A.

[0026] 3(C) shows the step of removing the first resist mask 114. The first resist mask 114 is removed by a stripping solution. An opening 118 is formed in the area where the first resist mask 114 has been removed. In other words, the first resist mask 114 is removed from the first support substrate 110, and the release layer 116 is separated into an inner region 120 and an outer region 122 with the opening 118 in between.

[0027] 4A, when forming the release layer 116, it is preferable that the film thickness d1 of the first resist mask 114 is the same as or approximately equal to the design film thickness d2 of the release layer 116. When the release layer 116 is formed by plating, the release layer 116 grows in a direction increasing in thickness from the second surface 110A of the conductive first support substrate 110. By setting the film thickness so that the top surface of the first resist mask 114 does not come into contact with the release layer 116 when the release layer 116 has grown to the desired design film thickness d2, the subsequent peeling step of the first resist mask 114 can be performed smoothly.

[0028] Generally, when the release layer 116 is formed, an electric field is concentrated at the outermost periphery of the deposition mask 102. As a result, the film thickness of the outermost periphery of the deposition mask 102 is thicker than that of the inner periphery of the deposition mask. Therefore, as shown in FIG. 4B, the release layer 116 is formed thicker than the first resist mask 114 (d2>d1), and the release layer 116 grows so as to cover the upper surface of the first resist mask 114. If the first resist mask 114 is removed in this state, a problem occurs in that part of the release layer 116 peels off. That is, when the first resist mask 114 is immersed in a stripping solution, it swells, and the part of the release layer 116 covering the upper surface of the first resist mask 114 is pushed up, causing the release layer 116 to peel off. If the release layer 116 peels off, the deposition mask 102 that is later formed on the release layer 116 will be damaged and defective. When an organic EL display device is manufactured using a damaged deposition mask, the organic EL elements corresponding to the damaged portion of the deposition mask will not have the light-emitting layer deposited thereon. The organic EL elements without the light-emitting layer deposited thereon will not emit light, which can lead to display defects in the organic EL display device.

[0029] As described above, the peeling layer 116 formed by plating tends to have a larger thickness near the outermost periphery than near the center, because film growth is more accelerated near the outermost periphery. Therefore, if conditions are set so that the thickness of the peeling layer 116 does not exceed the thickness of the first resist mask 114 near the outermost periphery, the thickness of the peeling layer 116 near the center may be insufficient.

[0030] To solve this problem, in the method for manufacturing the deposition mask 102 according to one embodiment of the present invention, the step of forming the peeling layer 116 shown in Fig. 3(B) is performed using a deposition mask manufacturing apparatus 150 shown in Fig. 5. Specifically, in the method for manufacturing the deposition mask 102 according to one embodiment of the present invention, the structure shown in Fig. 4(A) is formed using the deposition mask manufacturing apparatus 150 shown in Figs. 5 and 6.

[0031] FIG. 5 shows an example of a deposition mask manufacturing apparatus 150 in which the second support member 164 is a detachable member and is removed from the first surface 151A ( FIG. 7(A)) of the support base material 151, and FIG. 6 shows an example of a deposition mask manufacturing apparatus 150 in which the second support member 164 is attached to the first surface 151A ( FIG. 7(A)) of the support base material 151. As shown in FIG. 5 or 6, the deposition mask manufacturing apparatus 150 includes the support base material 151, a storage unit 152 that stores the first support substrate 110 ( FIG. 8 ), and a frame unit 154 that covers the outer edge portion 111 ( FIG. 8 ) of the first support substrate 110. The storage unit 152 is provided between the support base material 151 and the frame unit 154.

[0032] The frame mold part 154 has a first support member 162, a second support member 164, fixing members 166A and 166B that fix the first support member 162 to a first surface 151A (FIG. 7(A)) of the support base material 151, and a fixing member 168 that fixes the second support member 164 to the first surface 151A (FIG. 7(A)) of the support base material 151. The frame mold part 154 also has an opening 190 that is formed by the first support member 162 and the second support member 164.

[0033] The first support member 162 has a first overhanging portion 162A (FIGS. 7(A) and 7(B)) and a first wall portion 157A. The first support member 162 has a U-shape in plan view. The U-shape includes a first side 190A, a second side 190B, and a third side 190C. The first side 190A faces (opposes) a fourth side 190D included in the second support member 164. The second side 190B faces (opposes) the third side 190C. The first overhanging portion 162A (FIGS. 7(A) and 7(B)) and the first wall portion 157A are provided on a first surface 151A (FIG. 7(A)) of the support base material 151. The first wall portion 157A is provided on the upper part of the first surface 151A of the support base material 151, between the first surface 151A and the first overhanging portion 162A, so as to be in contact with the first surface 151A and the first overhanging portion 162A. The first overhanging portion 162A is provided on the upper part of the first wall portion 157A so as to protrude toward the inside of the first surface 151A. The first support member 162 can be attached to and detached from the first surface 151A of the support base material 151 by fixing members 166A, 166B, and 166C. The number of fixing members 166 is arbitrary. In one embodiment of the present invention, the number of fixing members 166 is, for example, eight.

[0034] The second support member 164 has an electrode portion 163, a third support member 165, a fourth side 190D, a second overhang portion 165A, and a second wall portion 157B. The electrode portion 163, the third support member 165, the fourth side 190D, the second overhang portion 165A, and the second wall portion 157B are provided on the first surface 151A of the support base material 151 ( FIG. 7(A) ). The second wall portion 157B is provided above the first surface 151A of the support base material 151, between the first surface 151A of the support base material 151 and the second overhang portion 165A, so as to be in contact with the first surface 151A of the support base material 151 and the second overhang portion 165A. The electrode portion 163 is provided above the first surface 151A of the support base material 151, between the first surface 151A and the second overhanging portion 165A, so as to be in contact with the second overhanging portion 165A. The second overhanging portion 165A is provided above the electrode portion 163, so as to be in contact with the electrode portion 163 and to protrude inward from the first surface 151A. The second support member 164 can be attached to and detached from the first surface 151A of the support base material 151 (FIG. 7(A)) by fixing members 168. The number of fixing members 168 is arbitrary. The third support member 165 is provided so as to surround the electrode portion 163. In one embodiment of the present invention, the number of fixing members 168 is, for example, two. For example, by making at least one of the first support member 162 or the second support member 164 detachable from the first surface 151A (Figure 7(A)) of the support base material 151, it becomes possible to store the first support substrate 110 (Figure 8) in the storage section 152 and to remove the first support substrate 110 (Figure 8) from the storage section 152.

[0035] As shown in FIGS. 6, 7A, and 7B, when second support member 164 is attached to first surface 151A, first support member 162 and second support member 164 are adjacent to each other, first overhanging portion 162A and second overhanging portion 165A are adjacent to each other, first step portion 156A and second step portion 156B are adjacent to each other, and first wall portion 157A and second wall portion 157B are adjacent to each other. Opening 190 has four sides: first side 190A, second side 190B, third side 190C, and fourth side 190D. Length L1 is the length between first side 190A and fourth side 190D, and is also the length between first overhanging portion 162A and second overhanging portion 165A. Length L2 is the length between second side 190B and third side 190C, and is also the length between first overhanging portion 162A and first overhanging portion 162A. Length L3 of storage portion 152 corresponds to length L1 of opening 190, and length L4 of storage portion 152 corresponds to length L2 of opening 190. Length L3 of storage portion 152 is also the length between first step portion 156A and second step portion 156B. Length L4 of storage portion 152 is also the length between first overhanging portion 162A and second overhanging portion 165A. In one embodiment of the present invention, length is also referred to as distance.

[0036] The length L1 is shorter (smaller) than the length L2, and the length L3 is shorter (smaller) than the length L4. That is, the opening portion of the opening 190 is smaller than the storage portion 152. The opening portion of the opening 190 is also smaller than the first support substrate 110. Therefore, since the first support substrate 110 is securely stored and fixed in the storage portion 152, the position of the first support substrate 110 does not shift when the deposition mask manufacturing apparatus 150 is immersed in a plating bath. As a result, the film thickness of the release layer 116 formed on the first support substrate 110 is uniform from the center to the outer periphery of the release layer 116, and the release layer 116 is formed uniformly in its plane. In one embodiment of the present invention, length L1 may be referred to as the first width, length L2 may be referred to as the second width, length L3 may be referred to as the third width, and length L4 may be referred to as the fourth width.

[0037] According to Figures 7(A) and 7(B), fixing member 166A penetrates through opening 176A provided in first support member 162 and opening 186A provided in support base material 151, fixing member 166B penetrates through opening 176B provided in first support member 162 and opening 186B provided in support base material 151, and fixing member 166C penetrates through opening 176C provided in first support member 162 and opening 186C provided in support base material 151, thereby attaching and fixing first support member 162 to first surface 151A. Furthermore, the fixing member 168 passes through the opening 178 provided in the third support member 165, the opening 173 provided in the electrode portion 163, and the opening 186D provided in the support base material 151, thereby attaching and fixing the second support member 164 to the first surface 151A.

[0038] As shown in FIG. 7A, the first wall 157A has a first portion 157C and a first step 156A. The first portion 157C is provided so that its height decreases from the first surface 151A up to a predetermined height K. The first step 156A is provided on the inner surface of the first wall 157A by the first portion 157C. The second wall 157B has a second step 156B. The second step 156B is formed by an electrode portion 163 protruding from the inner surface of the second wall 157B at a predetermined height K from the first surface 151A. The electrode portion 163 is provided at a distance of the predetermined height K from the first surface 151A and protrudes on the opposite side of the second overhang portion 165A of the second support member 164 (third support member 165). By having the electrode portion 163 protrude to the opposite side of the second overhang portion 165A, a connecting member such as a clip can be easily connected to the electrode portion 163. As a result, during the plating process described below, a voltage can be easily applied to the electrode portion 163 via the connecting member.

[0039] 8, 9A, and 9B show a step of forming a peeling layer 116 using a deposition mask manufacturing apparatus 150. In the following description, descriptions of structures that are the same as or similar to those in FIGS.

[0040] 8, 9(A), and 9(B), in the step of forming the release layer 116, the first support substrate 110 is stored and fixed in the storage section 152. Specifically, the first support substrate 110 is placed on the first surface 151A of the support base material 151, and at least two sides of the periphery of the first support substrate 110 are abutted against at least two sides that sandwich a corner of the U-shaped shape of the first support member 162. For example, the two sides of the first support substrate 110 are abutted against a first side 190A, a second side 190B, and a third side 190C of the storage section 152.

[0041] At this time, as shown in the dotted circle 162C (FIG. 9(A)) of the first support substrate 110, the outer edge 111 of one side of the first support substrate 110 abuts against the first step portion 156A. In other words, a part of the outer edge 111 of the first support substrate 110 is fitted into the first step portion 156A of the first support member 162, and the first support substrate 110 is sandwiched between the first surface 151A and the first step portion 156A.

[0042] Next, the second support member 164 is attached to and fixed on the first surface 151A of the support base material 151. At this time, as shown in the dotted circle 164C (FIG. 9(A)), the outer edge 111 of one side of the first support substrate 110 abuts against the second step portion 156B. In other words, a portion of the outer edge 111 of the first support substrate 110 is fitted into the second step portion 156B of the second support member 164, and the first support substrate 110 is sandwiched between the first surface 151A and the second step portion 156B. A portion of the second surface 110A of the first support substrate 110 is exposed to the opening 190, and the remaining portion of the second surface 110A of the first support substrate 110 is covered by the frame portion 154.

[0043] As a result, the first support member 162 and the second support member 164 are provided on the first surface 151A so as to surround the outer periphery of the first support substrate 110. In addition, the first surface 151A of the support base material 151 can support the first support substrate 110.

[0044] Next, the deposition mask manufacturing apparatus 150 containing the first support substrate 110 is immersed in a plating bath. A voltage is applied between the electrode 163 and a solution containing a metal material filled in the plating bath, thereby performing a plating process. By using the deposition mask manufacturing apparatus 150, the release layer 116 grows in a direction of increasing thickness from the second surface 110A of the conductive first support substrate 110, thereby forming the release layer 116 on the second surface 110A of the first support substrate 110. In other words, the release layer 116 is provided on both the side where the first step portion 156A is provided and the side opposite the side where the first step portion 156A is provided, with respect to the first resist mask 114 provided on the second surface 110A. That is, the release layer 116 is provided on a portion of the second surface 110A where the first resist mask 114 is not provided. The release layer 116 has a metal film formed using a metal material.

[0045] As shown in FIG. 9A, the first support member 162 or the first overhanging portion 162A covers the first resist mask 114 and a portion of the second surface 110A of the first support substrate 110. In the cross-sectional structure (cross-sectional view) taken along D1-D2, the distance H between the portion of the first overhanging portion 162A facing the first support substrate 110 and the second surface 110A is, for example, 10 mm. The distance W between the end of the first overhanging portion 162A of the first support member 162 and the end of the first resist mask 114 provided on the second surface 110A is, for example, 4 mm. In this case, the design film thickness d2 of the peeling layer 116 is 120 μm. In one embodiment of the present invention, the distance H is also referred to as the height of the overhanging portion, and the distance W is also referred to as the coverage width.

[0046] The second support member 164 or the second overhanging portion 165A covers the first resist mask 114 and a portion of the second surface 110A of the first support substrate 110. In the cross-sectional structure (cross-sectional view) along D1-D2, the distance H between the portion (surface) of the second overhanging portion 165A facing the first support substrate 110 and the second surface 110A is, for example, 10 mm, the distance W between the end of the second overhanging portion 165A of the third support member 165 and the end of the first resist mask 114 provided on the second surface 110A is, for example, 4 mm, and the length over which the second overhanging portion 165A covers the first support substrate 110 is longer (greater) than the length over which the first overhanging portion 162A covers the first support substrate 110.

[0047] 9(B), the first support member 162 covers the first resist mask 114 and the first support substrate 110. Also, in the cross-sectional structure (cross-sectional view) taken along E1-E2, as in the cross-sectional structure (cross-sectional view) taken along D1-D2, the distance H between the portion (surface) of the first overhanging portion 162A facing the first support substrate 110 and the second surface 110A is 10 mm, the distance W between the end of the first overhanging portion 162A and the end of the first resist mask 114 provided on the second surface 110A is 4 mm, and the designed film thickness d2 of the peeling layer 116 is 120 μm.

[0048] When the first support substrate 110 is stored and fixed in the storage section 152, the first support substrate 110 abuts against at least two sides of the U-shaped corners of the first support member 162, and the first support substrate 110 enters into the first support member 162 and part of the second support member 164 (third support member 165). As a result, the first support substrate 110 is stably fixed in the storage section 152, and therefore the film thickness of the release layer 116 formed on the first support substrate 110 is uniform at the center and the outer periphery of the release layer 116, and the release layer 116 is formed uniformly in its plane.

[0049] Furthermore, the deposition mask manufacturing apparatus 150 according to one embodiment of the present invention has an opening 190, and the distances W and H are configured to have predetermined values, allowing the first overhanging portion 162A to cover the first support substrate 110 and the first resist mask 114. As a result, the deposition mask manufacturing apparatus 150 can control the circulation of the solution containing the metal material filled in the plating bath within the deposition mask manufacturing apparatus 150. That is, near the outermost periphery of the first support substrate 110, the circulation of the solution is suppressed, and the ion concentration in the nearby solution decreases as the release layer 116 grows. As a result, the growth rate of the release layer 116 near the outermost periphery of the first support substrate 110 decreases, thereby preventing the film thickness from increasing compared to the central portion. Therefore, the deposition mask manufacturing apparatus 150 can uniformly form the release layer 116 of the metal material with controlled circulation on the first support substrate 110, and can form the release layer 116 to a uniform thickness from the center to the outer periphery of the release layer 116.

[0050] As shown in FIG. 10 , for example, when the distance H (eave height H) is 3.5 mm, the outermost peripheral film thickness of the release layer 116 is 19.5 μm to 20.5 μm. When the distance H (eave height H) is 6 mm, the outermost peripheral film thickness of the release layer 116 is 59.5 μm to 60.5 μm. When the distance H (eave height H) is 9 mm, the outermost peripheral film thickness of the release layer 116 is 99.5 μm to 100.5 μm. When the distance H (eave height H) is 10 mm, the outermost peripheral film thickness of the release layer 116 is 119.5 μm to 120.5 μm. That is, when the design film thickness d2 of the release layer 116 is set, the distance H (eave height H) can be set using FIG. 10 . For example, in one embodiment of the present invention, as described above, by setting the distance H (eave height H) to 10 mm, the design film thickness d2 of the release layer 116 can be 120 μm.

[0051] 10, the deposition mask manufacturing apparatus 150 according to one embodiment of the present invention has an opening 190, and the distance W and the distance H are set to predetermined values, thereby making it possible to control the film thickness of the release layer 116. As a result, the film thickness of the release layer 116 does not vary between the central portion and the outermost periphery, and therefore, peeling or damage to the release layer 116 can be suppressed in the step of peeling the release layer 116 from the second surface 110A of the first support substrate 110, which will be described later.

[0052] FIG. 11(A) shows a step of providing an adhesive layer 124 on the release layer 116. The adhesive layer 124 is preferably a resist film that has a predetermined adhesive strength or cohesive strength in an unexposed state. The resist film is, for example, a dry film resist. The adhesive layer 124 preferably covers the entire inner region 120 of the release layer 116, and the ends of the adhesive layer 124 preferably extend outside the release layer 116. The ends of the adhesive layer 124 may extend to the outer region 122 of the release layer 116. By having such a size, the release layer 116, which is supplied as a film-like member, can reliably cover the inner region of the release layer 116.

[0053] As shown in FIG. 11B, the outer periphery of the adhesive layer 124 may be unexposed, and the inner region of the adhesive layer 124 may be exposed. Specifically, the outer periphery 132 of the adhesive layer 124, including the region overlapping the edge of the release layer 116, may be left as the unexposed region, and the region inside the outer periphery 132 may be exposed to form an exposed region, and the exposed surface of the region inside the outer periphery 132 may be hardened. Preferably, at least a portion of the outer region 122 (the region to be exposed) overlaps with the release layer 116. The selective exposure of the adhesive layer 124 may be performed using a photomask. For example, when the photosensitive dry film resist used for the adhesive layer 124 is a positive type, a first photomask 126 is used, in which a light-shielding portion 129 is formed so as to surround the light-transmitting portion 130. This exposure process hardens the adhesive layer 124 compared to the outer region 122 (the unexposed region), forming a region (the region inside the outer region 122) with reduced adhesive strength.

[0054] As mentioned above, the adhesive strength of the surface of the dry film resist is lost by exposure to light, but the areas that are already in contact with other surfaces in an unexposed state maintain their adhesive strength even after being hardened by light irradiation.

[0055] FIG. 12(A) shows a stage in which the adhesive layer 124 is brought into close contact with the second surface 112A of the second support substrate 112, and the release layer 116 is bonded to the first support substrate 110. At this time, most of the adhesive layer 124 has been exposed, and its surface has lost its adhesive strength. Therefore, the second support substrate 112 is fixed at the unexposed peripheral portion 132 of the adhesive layer 124. Meanwhile, the interface between the adhesive layer 124 and the release layer 116 has already been brought into close contact before exposure, and although the adhesive strength is lost by exposure, a certain degree of adhesive strength is maintained. The second support substrate 112 is formed of the same material as the first support substrate 110.

[0056] Furthermore, the adhesiveness can be increased by performing a baking process after bonding at the interface between the unexposed outer peripheral portion 132 and the peeling layer 116. The baking conditions are, for example, 60° C. and 1 hour.

[0057] 12(B) shows a step of peeling the release layer 116 from the second surface 110A of the first support substrate 110. The release layer 116 can be peeled off from the first support substrate 110 by applying a physical force to the interface with the first support substrate 110. For example, a jig with a sharp tip is pressed against the interface between the first support substrate 110 and the release layer 116 to form a portion that serves as a trigger for peeling, and then an external force is applied so as to peel off the first support substrate 110, thereby peeling the release layer 116 from the first support substrate 110.

[0058] FIG. 13A shows a step of forming a second resist mask 138 on the second support substrate 112 provided with the release layer 116. The second resist mask 138 is formed in a predetermined pattern. That is, the second resist mask 138 is selectively formed in regions where the multiple openings 103 and the dummy pattern 140 (described later) are to be formed. For example, a negative photoresist is applied to the release layer 116, and exposure is performed using a photomask so that the regions where the multiple openings 103 and the dummy pattern 140 are to be formed are selectively exposed. Alternatively, a positive photoresist is applied to the release layer 116, and exposure is performed using a photomask so that the non-opening regions are selectively exposed. Development is then performed to obtain a patterned second resist mask 138. It is preferable that the second resist mask 138 also be formed on the outer edge of the release layer 116 so that the release layer 116 can be easily peeled off from the deposition mask unit 100.

[0059] FIG. 13(B) shows a step in which a plating pattern is formed in the area not covered by the second resist mask 138 using a plating method to form a deposition mask 102. The plating pattern may be formed in one step or in several steps. When performing the plating in multiple steps, different metals may be formed in different steps. Furthermore, the plating process may be performed so that the upper surface of the plating pattern is lower or higher than the upper surface of the second resist mask 138. In the latter case, the upper surface of the plating pattern may be polished to be flattened. Next, as shown in FIG. 13(C), the second resist mask 138 is removed by etching with a stripping solution and / or ashing, thereby producing a deposition mask 102 in which a mask pattern is formed on the release layer 116 with a plurality of openings 103.

[0060] 13(B) and 13(C), when the deposition mask 102 is formed, a dummy pattern 140 is formed at a distance from the deposition mask 102. The dummy pattern 140 is configured to surround the deposition masks 102 in a plan view. Since the dummy pattern 140 and the deposition mask 102 are formed at the same time, they can have the same composition and thickness.

[0061] FIG. 14A shows one embodiment of a protective film 142 for protecting the mask pattern 104 of the deposition mask 102. A dry film resist can be used for the protective film 142. The protective film 142 has a structure in which, for example, a photocurable resin film 144 is sandwiched between a release film 145 and a protective film 146. The photocurable resin film 144 contains a negative photocurable resin. That is, it contains a polymer or oligomer that is cured by light. The thickness of the photocurable resin film 144 can be selected arbitrarily, for example, from 20 μm to 500 μm, from 50 μm to 200 μm, or from 50 μm to 120 μm. The protective film 146 contains a polymer material. The polymer material can be selected from, for example, polyolefin, polyimide, polyester, polystyrene, or fluorine-containing polyolefin.

[0062] 14(B) shows a state in which the protective film 142 is placed on the deposition mask 102. After the release film 145 is peeled off, the protective film 142 is placed so that the photocurable resin film 144 is sandwiched between the deposition mask 102 and the protective film 146. The protective film 142 is provided so as to cover at least the entire mask pattern 104.

[0063] Next, the photocurable resin film 144 is exposed to light. Specifically, as shown in Fig. 15, a second photomask 128 having a light-shielding portion 129 and a light-transmitting portion 130 is arranged so that the light-transmitting portion 130 overlaps the mask pattern 104, and exposure is performed using the second photomask 128. As a result, the solubility of the exposed portion in a developer decreases.

[0064] 16(A) shows a state in which the photocurable resin film 144 is exposed to light, the protective film 146 is peeled off, development is performed, and a third resist mask 148 is formed on the mask pattern 104. As shown in FIG. 16(A), when multiple mask patterns 104 are formed on the release layer 116, a third resist mask 148 is provided for each mask pattern 104. Note that a third resist mask 148 is not provided on the dummy pattern 140 because a support frame will be formed on it in a later process.

[0065] 16(B) shows a step of placing a support frame 108 on the dummy pattern 140. When a plurality of mask patterns 104 are formed, the support frame 108 is placed between each of the mask patterns. The support frame 108 may have a shape in which the outer pattern is wide and the patterns formed inside the outer pattern (patterns formed between the mask patterns 104) are narrow.

[0066] 17(A) shows a step of forming the connection portions 106 by plating. In the connection portions 106, a metal material is deposited mainly from portions of the surface of the deposition mask 102 that are not covered by the support frame 108 and the third resist mask 148. As a result, as shown in FIG. 17(A), the connection portions 106 are formed in contact with the upper surface of the deposition mask 102 and the side surface of the support frame 108. By forming the connection portions 106, the deposition mask 102 and the support frame 108 are connected and fixed together.

[0067] As a result of forming the connecting portions 106, the thickness of the connecting portions 106 may be the same as the thickness of the third resist mask 148, or may be smaller than the thickness of the third resist mask 148. As shown in FIG. 17A, the thickness of the connecting portions 106 may be larger than the thickness of the third resist mask 148. When the thickness of the connecting portions 106 is larger than the thickness of the third resist mask 148, the deposition mask 102 and the support frame 108 are more firmly bonded to each other. On the other hand, when the thickness of the connecting portions 106 is equal to or smaller than the thickness of the third resist mask 148, the connecting portions 106 can be prevented from being formed on the third resist mask 148. As a result, defects such as destruction of the connecting portions 106 when removing the third resist mask 148 or damage to the mask pattern 104 due to destruction of the connecting portions 106 can be prevented.

[0068] 17(B), the third resist mask 148 is peeled off using a peeling liquid, thereby forming the deposition mask unit 100 on the second support substrate 112. Thereafter, the peeling layer 116 is peeled off from the second support substrate 112, and further peeled off from the deposition mask 102, thereby obtaining the deposition mask unit 100 shown in FIG.

[0069] Since the deposition mask 102 has a fine mask pattern 104 formed thereon, it is also required that the film thickness be uniform between the central portion and the outermost periphery. Therefore, the deposition mask manufacturing apparatus 150 described above can also be used to store the second support substrate 112 during plating processing in forming the deposition mask 102 shown in FIGS. 13(B) and 13(C).

[0070] In the manufacturing process of the deposition mask unit 100 according to this embodiment, after the peeling layer 116 is transferred onto the second support substrate 112, wet processing using a chemical solution is performed in the step of exposing and developing the photocurable resin film 144 to form a second resist mask 138 (FIGS. 16(A) to 16(B)), and in the step of removing the second resist mask 138 with a stripping solution (FIGS. 17(A) to 17(B)).

[0071] By using the deposition mask manufacturing apparatus 150 and the manufacturing method of the deposition mask 102 described above, it is possible to prevent the film thickness d1 of the first resist mask 114 from becoming thicker than necessary. That is, it is possible to prevent the first resist mask 114 from becoming thicker. Furthermore, by using the deposition mask manufacturing apparatus 150 and the manufacturing method of the deposition mask 102, it is possible to prevent the first resist mask 114 from becoming thicker, which simplifies the manufacturing method and prevents an increase in costs associated with manufacturing.

[0072] The configuration of the deposition mask, the manufacturing apparatus for the deposition mask, the manufacturing method for the deposition mask, the configuration of the deposition mask unit, and the manufacturing method for the deposition mask unit described above as embodiments of the present invention can be appropriately combined as long as they are not mutually contradictory. Furthermore, configurations in which a person skilled in the art appropriately adds or deletes components or modifies designs, or adds or omits steps or modifies conditions, based on the configuration of the deposition mask, the manufacturing apparatus for the deposition mask, the manufacturing method for the deposition mask, the configuration of the deposition mask unit, and the manufacturing method for the deposition mask unit are also included in the scope of the present invention as long as they include the gist of the present invention.

[0073] Furthermore, even if there are other effects and advantages different from those brought about by the above-described embodiments, if they are clear from the description in this specification or can be easily predicted by a person skilled in the art, they are naturally understood to be brought about by the present invention. [Explanation of symbols]

[0074] 100: deposition mask unit, 102: deposition mask, 103: opening, 104: mask pattern, 106: connection portion, 108: support frame, 110: first support substrate, 110A: second surface, 111: outer edge portion, 112: second support substrate, 112A: second surface, 114: first resist mask, 116: peeling layer, 118: opening, 120: inner region, 122: outer region, 124: Adhesive layer, 126: first photomask, 128: second photomask, 129: light-shielding portion, 130: light-transmitting portion, 132: outer periphery, 138: second resist mask, 140: dummy pattern, 142: protective film, 144: photocurable resin film, 145: peeling film, 146: protective film, 148: third resist mask, 150: deposition mask manufacturing device, 151: supporting base material, 151A: first surface, 152: storage section, 154: frame section, 156A: first step section, 156B: second step section, 157A: first wall section, 157B: second wall section, 157C: first section, 162: first support member, 162A: first eaves section, 162C: circle, 163: electrode section, 164: second support member, 164C: circle, 165: third support member, 165A: second eaves section, 166: fixing member, 166A: fixing member, 166B: fixing member, 166C: fixing member, 168: fixing member, 173: opening, 176A: opening, 176B: opening, 176C: opening, 178: opening, 186A: opening, 186B: opening, 186C: opening, 186D: opening, 190: opening, 190A: first side, 190B: second side, 190C: third side, 190D: fourth side

Claims

1. a support base material having a first surface that supports a member to be plated; a first support member and a second support member provided on the first surface so as to surround an outer periphery of the member to be plated; an electrode portion provided apart from the first surface, the first support member has a first wall portion extending in a direction intersecting the first surface, and a first eave portion protruding inward from an upper portion of the first wall portion in a direction parallel to the first surface, the second support member has a second wall portion extending in a direction intersecting the first surface, and a second eave portion protruding inward from an upper portion of the second wall portion in a direction parallel to the first surface, the electrode portion is sandwiched between the second wall portion and the second overhang portion, the first wall portion has a first step portion recessed outward in a direction parallel to the first surface, the second wall portion has a second step portion recessed outward relative to the electrode portion in a direction parallel to the first surface, the first support member and the second support member are arranged at the first step portion and the second step portion so that the plated member can be sandwiched between the first surface and the first support member.

2. 2. The deposition mask manufacturing device according to claim 1, wherein a distance between the first overhang portion and the second overhang portion in a direction parallel to the first surface is smaller than a distance between the first step portion and the second step portion in a direction parallel to the first surface.

3. the first overhang portion and the second overhang portion cover a portion of the second surface of the plated member, The deposition mask manufacturing device according to claim 2 , wherein a length over which the second overhanging portion covers the second surface is greater than a length over which the first overhanging portion covers the member to be plated.

4. 4. The deposition mask manufacturing apparatus according to claim 3, wherein, in a cross-sectional view, a distance between the second overhang portion and the second surface in a direction intersecting the first surface is equal to a distance between the first overhang portion and the second surface in a direction intersecting the first surface.

5. 4. The deposition mask manufacturing device according to claim 3, wherein, in a cross-sectional view, a distance between an end of the second overhanging portion and an end of a first resist mask provided on the second surface in a direction parallel to the first surface is equal to a distance between the end of the first overhanging portion and an end of the first resist mask in a direction parallel to the first surface.

6. 6. The deposition mask manufacturing apparatus according to claim 5, wherein, in a cross-sectional view, a distance between the second overhanging portion and the second surface in a direction parallel to the first surface is 10 mm, and a distance between an end of the second overhanging portion and an end of the first resist mask in a direction parallel to the first surface is 4 mm.

7. 6. The deposition mask manufacturing apparatus according to claim 5, wherein, in a cross-sectional view, a release layer is provided on a side of the first resist mask where the first step portion is provided and on a side opposite to the side where the first step portion is provided.

8. forming the first resist mask with a first film thickness in an inner region of the second surface; 7. A method for manufacturing a deposition mask, comprising: forming a release layer on each of the second surfaces of the first resist mask, the second surface being on a side where the first step portion is provided and the second surface being on an opposite side to the side where the first step portion is provided, using the deposition mask manufacturing apparatus according to claim 6.

9. The method for manufacturing a deposition mask according to claim 8 , wherein the member to be plated is sandwiched between the first step portion, the second step portion, and the first surface.

10. The method for manufacturing a deposition mask according to claim 9 , wherein the release layer is formed of a metal film.

11. The method for manufacturing a deposition mask according to claim 10 , wherein the release layer is formed by plating.

12. The method for manufacturing a deposition mask according to claim 8 , wherein the thickness of the release layer is equal to the first film thickness.

13. The method for manufacturing a deposition mask according to claim 8 , wherein the peeling layer has a thickness of 119.5 μm or more and 120.5 μm or less.

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