Magnetic sensors and inspection devices

Abstract

To provide a magnetic sensor capable of stable operation and an inspection device.SOLUTION: A magnetic sensor includes an element portion and a conductive layer. The element portion includes first and second magnetic elements and first and second conductive members. The first magnetic element includes a first end portion and a first other end portion. A direction from the first end portion to the first other end portion is along a first direction. The second magnetic element includes a second end portion and a second other end portion. A direction from the second end portion to the second other end portion is along the first direction. The second end portion is electrically connected to the first other end portion. A second direction from the conductive layer to the element portion crosses the first direction. The conductive layer includes a first conductive portion and a first other conductive portion. A third direction from the first conductive portion to the first other conductive portion crosses a plane including the first direction and the second direction.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] FIELD An embodiment of the present invention relates to a magnetic sensor and an inspection device. [Background technology]

[0002] There are magnetic sensors that use magnetic layers. There are inspection devices that use magnetic sensors. Stable operation is desired for magnetic sensors. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2019-207167 Summary of the Invention [Problem to be solved by the invention]

[0004] The embodiments of the present invention provide a magnetic sensor and an inspection device that are capable of stable operation. [Means for solving the problem]

[0005] According to an embodiment of the present invention, a magnetic sensor includes an element unit and a conductive layer. The element unit includes a first magnetic element, a second magnetic element, a first conductive member, and a second conductive member. The first magnetic element includes a first end and a first other end. A direction from the first end to the first other end is along a first direction. The second magnetic element includes a second end and a second other end. A direction from the second end to the second other end is along the first direction. The second end is electrically connected to the first other end. The first conductive member includes a first portion and a first other portion. The first portion corresponds to the first end. The first other portion corresponds to the first other end. The second conductive member includes a second portion and a second other portion. The second portion corresponds to the second end. The second other portion corresponds to the second other end. A second direction from the conductive layer to the element unit intersects the first direction. The conductive layer includes a first conductive portion and a first other conductive portion. A third direction from the first conductive portion to the first other conductive portion intersects with a plane including the first direction and the second direction. [Brief explanation of the drawings]

[0006] [Figure 1] FIG. 1 is a schematic view illustrating the magnetic sensor according to the first embodiment. [Figure 2] FIG. 2 is a schematic view illustrating the magnetic sensor according to the first embodiment. [Figure 3] FIG. 3 is a schematic view illustrating the magnetic sensor according to the first embodiment. [Figure 4] 4A and 4B are schematic plan views illustrating the magnetic sensor according to the first embodiment. [Figure 5] 5(a) to 5(c) are schematic views illustrating the operation of the magnetic sensor according to the first embodiment. [Figure 6] 6(a) to 6(d) are schematic views illustrating the operation of the magnetic sensor according to the first embodiment. [Figure 7] 7A and 7B are schematic views illustrating the operation of the magnetic sensor according to the first embodiment. [Figure 8]FIG. 8 is a graph illustrating the characteristics of the magnetic sensor according to the first embodiment. [Figure 9] 9(a) to 9(c) are graphs illustrating the characteristics of the magnetic sensor according to the first embodiment. [Figure 10] 10A and 10B are schematic plan views illustrating the magnetic sensor according to the first embodiment. [Figure 11] 11A and 11B are schematic cross-sectional views illustrating the magnetic sensor according to the first embodiment. [Figure 12] FIG. 12 is a schematic view illustrating the magnetic sensor according to the first embodiment. [Figure 13] FIG. 13 is a schematic perspective view showing an inspection device according to the second embodiment. [Figure 14] FIG. 14 is a schematic plan view showing the inspection device according to the second embodiment. [Figure 15] FIG. 15 is a schematic diagram showing a sensor and an inspection device according to an embodiment. [Figure 16] FIG. 16 is a schematic diagram showing an inspection device according to an embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0007] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as those in reality. Even when the same part is shown, the dimensions and ratios may be different depending on the drawing. In this specification and in each drawing, elements similar to those previously described with reference to the previous drawings are designated by the same reference numerals, and detailed descriptions thereof will be omitted where appropriate.

[0008] (First embodiment) 1 to 3 are schematic views illustrating the magnetic sensor according to the first embodiment. Fig. 1 is a plan view, Fig. 2 is a cross-sectional view taken along line A1-A2 in Fig. 1, and Fig. 3 is a cross-sectional view taken along line B1-B2 in Fig. 1. 4A and 4B are schematic plan views illustrating the magnetic sensor according to the first embodiment.

[0009] 1 to 3, the magnetic sensor 110 according to the embodiment includes an element unit 10E and a conductive layer 65. The element unit 10E includes a first magnetic element 11, a second magnetic element 12, a first conductive member 21, and a second conductive member 22. In this example, the element unit 10E includes a third magnetic element 13, a fourth magnetic element 14, a third conductive member 23, and a fourth conductive member 24. The third magnetic element 13, the fourth magnetic element 14, the third conductive member 23, and the fourth conductive member 24 will be described later.

[0010] 4(a) illustrates a first conductive member 21, a second conductive member 22, a third conductive member 23, and a fourth conductive member 24. FIG. 4(b) illustrates a first magnetic element 11, a second magnetic element 12, a third magnetic element 13, and a fourth magnetic element 14.

[0011] 4(b), the first magnetic element 11 includes a first end 11e and a first other end 11f. The direction from the first end 11e to the first other end 11f is along the first direction D1.

[0012] The first direction D1 is defined as the Y-axis direction. A direction perpendicular to the Y-axis direction is defined as the Z-axis direction. A direction perpendicular to the Y-axis direction and the Z-axis direction is defined as the X-axis direction.

[0013] 4(b), the second magnetic element 12 includes a second end 12e and a second other end 12f. The direction from the second end 12e to the second other end 12f is along the first direction D1. The second end 12e is electrically connected to the first other end 11f.

[0014] 4(a) and 4(b), the first conductive member 21 includes a first portion 21e and a first other portion 21f. The first portion 21e corresponds to the first end portion 11e. The first other portion 21f corresponds to the first other end portion 11f.

[0015] 4(a) and 4(b), the second conductive member 22 includes a second portion 22e and a second other portion 22f. The second portion 22e corresponds to the second end portion 12e. The second other portion 22f corresponds to the second other end portion 12f.

[0016] 2 and 3, a second direction D2 from the conductive layer 65 to the element portion 10E intersects with the first direction D1. The second direction D2 is, for example, the Z-axis direction.

[0017] 1, the conductive layer 65 includes a first conductive portion 65e and a first other conductive portion 65f. A third direction D3 from the first conductive portion 65e to the first other conductive portion 65f intersects with a plane including the first direction D1 and the second direction D2. The third direction D3 is, for example, the X-axis direction.

[0018] In the embodiment, the first electrical resistance of the first magnetic element 11 and the electrical resistance of the second magnetic element 12 change in response to the magnetic field to be detected. This is because the magnetic field to be detected changes the magnetization direction of the magnetic layers included in these magnetic elements. In the embodiment, a first current I1 including an AC component is supplied to the first conductive member 21 and the second conductive member 22. A magnetic field (AC magnetic field) based on the first current I1 is applied to the first magnetic element 11 and the second magnetic element 12. The electrical resistances of these magnetic elements also change depending on the magnetic field (AC magnetic field) based on the first current I1. By detecting signals corresponding to the electrical resistances of these magnetic elements using the AC signal included in the first current I1 as a reference signal, it is possible to suppress noise and detect the magnetic field to be detected with high accuracy.

[0019] For example, the magnetic characteristics of such an element unit 10E may change due to an unintended surrounding magnetic field. For example, the magnetic sensor 110 may come close to an unintended surrounding magnetic body, causing a change in the state of magnetization of the magnetic layer included in the magnetic element. For example, magnetic domains in the magnetic layer may be formed in an unintended state. In such cases, the magnetic characteristics of the magnetic element may change, making it difficult to perform the desired detection.

[0020] In the embodiment, a conductive layer 65 is provided. A current is supplied to the conductive layer 65. A magnetic field based on this current initializes the magnetization of the magnetic layer included in the magnetic element to a desired state. This enables stable detection. According to the embodiment, a magnetic sensor capable of stable operation can be provided.

[0021] 1 , a current circuit 74 and a first circuit 71 may be provided. The current circuit 74 and the first circuit 71 may be included in the magnetic sensor 110. The current circuit 74 may supply a conductive layer current IL to the conductive layer 65. The first circuit 71 may supply a first current I1 to the first conductive member 21 and the second conductive member 22.

[0022] 4(b), a second circuit 72 and a third circuit 73 may be provided. The second circuit 72 and the third circuit 73 may be included in the magnetic sensor 110. The second circuit 72 can supply an element current Id (or an element voltage) to the first magnetic element 11 and the second magnetic element 12. The third circuit 73 can detect values ​​corresponding to the first electrical resistance of the first magnetic element 11 and the second electrical resistance of the second magnetic element 12.

[0023] An example of the operation of these circuits will now be described. 5(a) to 5(c) are schematic views illustrating the operation of the magnetic sensor according to the first embodiment. The horizontal axis of these figures is time tm. The vertical axis of Fig. 5(a) is the conductive layer current IL. The vertical axis of Fig. 5(b) is the first current I1. The vertical axis of Fig. 5(c) is the device current Id.

[0024] As shown in FIG. 5(a), a first period TP1 and a second period TP2 can be set. The first period TP1 is, for example, an initialization period. The first period TP1 is, for example, a refresh period. The second period TP2 is a detection period. The first period TP1 may be started, for example, by an external initialization start signal SS1. Alternatively, the first period TP1 may be started at a predetermined time. The length of the first period TP1 can be set.

[0025] 5(a), the current circuit 74 can supply a conductive layer current IL to the conductive layer 65 during a first period TP1. As shown in FIG. 1, the conductive layer current IL flows between the first conductive portion 65e and the first other conductive portion 65f. The direction of the conductive layer current IL is along the third direction D3.

[0026] 5(a), during the second period TP2, the conductive layer current IL is substantially zero. The current circuit 74 does not supply the conductive layer current IL between the first conductive portion 65e and the first other conductive portion 65f during the second period TP2. The magnitude of the conductive layer current IL during the second period TP2 is 1 / 10 or less of the magnitude of the conductive layer current IL during the first period TP1.

[0027] As shown in Fig. 5(b), during the second period TP2, the first current I1 flows. As shown in Fig. 4(a), the first current I1 passes through the first conductive member 21 and the second conductive member 22. In this way, during the second period TP2, the first circuit 71 can supply the first current I1 including an AC component to the first conductive member 21 and the second conductive member 22.

[0028] 5(b), during the first period TP1, the first circuit 71 does not supply the first current I1 to the first conductive member 21 and the second conductive member 22. For example, the magnitude of the first current I1 during the first period TP1 is 1 / 10 or less of the magnitude of the first current I1 during the second period TP2.

[0029] During the first period TP1 in which the conductive layer current IL is supplied as described above, for example, initialization is performed. During the second period TP2 in which the first current I1 is supplied as described above, a detection operation is performed.

[0030] 5(c), the second circuit 72 and the third circuit 73 can perform the sensing operation OP1 in the second period TP2. In the sensing operation OP1, the second circuit 72 supplies the element current Id (or the element voltage) to the first magnetic element 11 and the second magnetic element 12.

[0031] In the detection operation OP1, the third circuit 73 can detect a signal corresponding to the difference between the first electric resistance of the first magnetic element 11 and the second electric resistance of the second magnetic element 12 (detection signal Sig1).

[0032] 5(c), the second circuit 72 and the third circuit 73 do not perform the sensing operation OP1 during the first period TP1. For example, the magnitude of the device current Id during the first period TP1 is 1 / 10 or less of the device current Id during the second period TP2.

[0033] By performing the sensing operation OP1 as described above after the first period TP1 (refresh period), a stable operation can be performed in the sensing operation OP1.

[0034] The combination of the first period TP1 and the second period TP2 may be repeated, and the first period TP1 may be provided before the second period TP2.

[0035] The first circuit 71, the second circuit 72, the third circuit 73 and the current circuit 74 may be included in the circuit section 70.

[0036] 4(b), for example, the device current Id flows from the first other end 11f to the first end 11e, and the device current Id flows from the second other end 12f to the second end 12e.

[0037] As shown in FIG. 4A, for example, the second portion 22e is electrically connected to the first portion 21e. The first current I1 flows, for example, from the second other portion 22f to the second portion 22e and from the first portion 21e to the first other portion 21f. When the first current I1 flows from the second other portion 22f to the second portion 22e, the first current I1 flows from the first portion 21e to the first other portion 21f. The phase of the current flowing through the first conductive member 21 is opposite to the phase of the current flowing through the second conductive member 22. As a result, the direction of the influence of the magnetic field based on the first current I1 on the first magnetic element 11 is opposite to the direction of the influence of the magnetic field based on the first current I1 on the second magnetic element 12. Noise is suppressed by detecting the difference in electrical resistance between these magnetic elements. Higher sensitivity detection is possible.

[0038] As shown in FIGS. 1 to 3, in this example, the element unit 10E further includes a third magnetic element 13, a fourth magnetic element 14, a third conductive member 23, and a fourth conductive member 24.

[0039] 4(b), the third magnetic element 13 includes a third end portion 13e and a third other end portion 13f. The direction from the third end portion 13e to the third other end portion 13f is along the first direction D1. The third end portion 13e is electrically connected to the first end portion 11e.

[0040] The fourth magnetic element 14 includes a fourth end portion 14e and a fourth other end portion 14f. The direction from the fourth end portion 14e to the fourth other end portion 14f is along the first direction D1. The fourth end portion 14e is electrically connected to the third other end portion 13f. The fourth other end portion 14f is electrically connected to the second other end portion 12f.

[0041] 4(a) and 4(b), the third conductive member 23 includes a third portion 23e and a third other portion 23f. The third portion 23e corresponds to the third end portion 13e. The third other portion 23f corresponds to the third other end portion 13f.

[0042] 4(a) and 4(b), the fourth conductive member 24 includes a fourth portion 24e and a fourth other portion 24f. The fourth portion 24e corresponds to the fourth end portion 14e. The fourth other portion 24f corresponds to the fourth other end portion 14f.

[0043] 4(a), the first circuit 71 is electrically connected to the second other portion 22f and the fourth other portion 24f. The first circuit 71 is capable of supplying a first current I1 to the third conductive member 23 and the fourth conductive member 24 during the second period TP2.

[0044] As shown in FIG. 4(b), the second circuit 72 is electrically connected to a first connection point CP1 between the first end 11e and the third end 13e and a second connection point CP2 between the second other end 12f and the fourth other end 14f. In the detection operation OP1, the second circuit 72 supplies a device current Id (or a device voltage) between the first connection point CP1 and the second connection point CP2. For example, the device current Id flows from the third other end 13f to the third end 13e. The device current Id flows from the fourth other end 14f to the fourth end 14e.

[0045] A bridge circuit (so-called full bridge circuit) is formed by the first magnetic element 11, the second magnetic element 12, the third magnetic element 13, and the fourth magnetic element 14. By using a bridge circuit, higher accuracy detection is possible.

[0046] 4(b), the third circuit 73 is electrically connected to a third connection point CP3 between the first other end 11f and the second end 12e and a fourth connection point CP4 between the third other end 13f and the fourth end 14e. In a detection operation OP1, the third circuit 73 can detect a detection signal Sig1 corresponding to the potential difference between the third connection point CP3 and the fourth connection point CP4.

[0047] 2, the first magnetic element 11 includes, for example, a first magnetic layer 11a, a first opposing magnetic layer 11b, and a first non-magnetic layer 11n. The direction from the first opposing magnetic layer 11b to the first magnetic layer 11a is along the second direction D2. The first non-magnetic layer 11n is located between the first opposing magnetic layer 11b and the first magnetic layer 11a.

[0048] 3, the second magnetic element 12 includes, for example, a second magnetic layer 12a, a second opposing magnetic layer 12b, and a second non-magnetic layer 12n. The direction from the second opposing magnetic layer 12b to the second magnetic layer 12a is along the second direction D2. The second non-magnetic layer 12n is located between the second opposing magnetic layer 12b and the second magnetic layer 12a.

[0049] 2, the third magnetic element 13 includes, for example, a third magnetic layer 13a, a third opposing magnetic layer 13b, and a third non-magnetic layer 13n. The direction from the third opposing magnetic layer 13b to the third magnetic layer 13a is along the second direction D2. The third non-magnetic layer 13n is located between the third opposing magnetic layer 13b and the third magnetic layer 13a.

[0050] 3, the fourth magnetic element 14 includes, for example, a fourth magnetic layer 14a, a fourth opposing magnetic layer 14b, and a fourth non-magnetic layer 14n. The direction from the fourth opposing magnetic layer 14b to the fourth magnetic layer 14a is along the second direction D2. The fourth non-magnetic layer 14n is located between the fourth opposing magnetic layer 14b and the fourth magnetic layer 14a.

[0051] One of the first magnetic layer 11a and the first opposing magnetic layer 11b may be a magnetization free layer. The other of the first magnetic layer 11a and the first opposing magnetic layer 11b may be a reference layer. One of the second magnetic layer 12a and the second opposing magnetic layer 12b may be a magnetization free layer. The other of the second magnetic layer 12a and the second opposing magnetic layer 12b may be a reference layer. One of the third magnetic layer 13a and the third opposing magnetic layer 13b may be a magnetization free layer. The other of the third magnetic layer 13a and the third opposing magnetic layer 13b may be a reference layer. One of the fourth magnetic layer 14a and the fourth opposing magnetic layer 14b may be a magnetization free layer. The other of the fourth magnetic layer 14a and the fourth opposing magnetic layer 14b may be a reference layer.

[0052] 2, the element unit 10E may further include a first magnetic member 51 and a first opposing magnetic member 51A. The first magnetic member 51 includes a first magnetic end portion 51e and a first magnetic other end portion 51f. The direction from the first magnetic end portion 51e to the first magnetic other end portion 51f is along the third direction D3.

[0053] The first opposing magnetic member 51A includes a first opposing magnetic end portion 51Ae and a first opposing magnetic other end portion 51Af. The direction from the first opposing magnetic end portion 51Ae to the first opposing magnetic other end portion 51Af is along the third direction D3.

[0054] The position of at least a part of the first magnetic element 11 in the third direction D3 is between the position of the first magnetic other end 51f in the third direction D3 and the position of the first opposing magnetic end 51Ae in the third direction D3.

[0055] 3, the element unit 10E may further include a second magnetic member 52 and a second opposing magnetic member 52A. The second magnetic member 52 includes a second magnetic end portion 52e and a second magnetic other end portion 52f. The direction from the second magnetic end portion 52e to the second magnetic other end portion 52f is along the third direction D3.

[0056] The second opposing magnetic member 52A includes a second opposing magnetic end portion 52Ae and a second opposing magnetic other end portion 52Af. The direction from the second opposing magnetic end portion 52Ae to the second opposing magnetic other end portion 52Af is along the third direction D3.

[0057] The position of at least a part of the second magnetic element 12 in the third direction D3 is between the position of the second magnetic other end 52f in the third direction D3 and the position of the second opposing magnetic end 52Ae in the third direction D3.

[0058] 2, the element unit 10E may further include a third magnetic member 53 and a third opposing magnetic member 53A. The third magnetic member 53 includes a third magnetic end portion 53e and a third magnetic other end portion 53f. The direction from the third magnetic end portion 53e to the third magnetic other end portion 53f is along the third direction D3.

[0059] The third opposing magnetic member 53A includes a third opposing magnetic end portion 53Ae and a third opposing magnetic other end portion 53Af The direction from the third opposing magnetic end portion 53Ae to the third opposing magnetic other end portion 53Af is along the third direction D3.

[0060] The position of at least a part of the third magnetic element 13 in the third direction D3 is between the position of the third magnetic other end 53f in the third direction D3 and the position of the third opposing magnetic end 53Ae in the third direction D3.

[0061] 3, the element unit 10E may further include a fourth magnetic member 54 and a fourth opposing magnetic member 54A. The fourth magnetic member 54 includes a fourth magnetic end portion 54e and a fourth magnetic other end portion 54f. The direction from the fourth magnetic end portion 54e to the fourth magnetic other end portion 54f is along the third direction D3.

[0062] The fourth opposing magnetic member 54A includes a fourth opposing magnetic end portion 54Ae and a fourth opposing magnetic other end portion 54Af. The direction from the fourth opposing magnetic end portion 54Ae to the fourth opposing magnetic other end portion 54Af is along the third direction D3.

[0063] The position of at least a part of the fourth magnetic element 14 in the third direction D3 is between the position of the fourth magnetic other end 54f in the third direction D3 and the position of the fourth opposing magnetic end 54Ae in the third direction D3.

[0064] The first magnetic member 51, the first opposing magnetic member 51A, the second magnetic member 52, the second opposing magnetic member 52A, the third magnetic member 53, the third opposing magnetic member 53A, the fourth magnetic member 54, and the fourth opposing magnetic member 54A function, for example, as an MFC (Magnetic Flux Concentrator). The first opposing magnetic member 51A may be continuous with the third magnetic member 53. The boundary between the first opposing magnetic member 51A and the third magnetic member 53 may be unclear or clear. A single magnetic member may be used as the first opposing magnetic member 51A and the third magnetic member 53. The second opposing magnetic member 52A may be continuous with the fourth magnetic member 54. The boundary between the second opposing magnetic member 52A and the fourth magnetic member 54 may be unclear or clear. A single magnetic member may be used as the second opposing magnetic member 52A and the fourth magnetic member 54.

[0065] As shown in FIG. 2, in this example, the position of the first conductive member 21 in the second direction D2 is between the position of the conductive layer 65 in the second direction D2 and the position of the first magnetic element 11 in the second direction D2.

[0066] As shown in FIG. 3, in this example, the position of the second conductive member 22 in the second direction D2 is between the position of the conductive layer 65 in the second direction D2 and the position of the second magnetic element 12 in the second direction D2.

[0067] As shown in FIG. 2, in this example, the position of the third conductive member 23 in the second direction D2 is between the position of the conductive layer 65 in the second direction D2 and the position of the third magnetic element 13 in the second direction D2.

[0068] As shown in FIG. 3, in this example, the position of the fourth conductive member 24 in the second direction D2 is between the position of the conductive layer 65 in the second direction D2 and the position of the fourth magnetic element 14 in the second direction D2.

[0069] As shown in FIGS. 2 and 3, the magnetic sensor 110 may further include a first substrate 66a and a first insulating member 67a. The conductive layer 65 is provided between the first substrate 66a and the element unit 10E. The first insulating member 67a is provided between the conductive layer 65 and the element unit 10E. The first substrate 66a is, for example, a mounting substrate. The first insulating member 67a is, for example, an insulating layer. The first insulating member 67a may include, for example, at least one of a metal oxide and a resin. The conductive layer 65 is protected by the first insulating member 67a.

[0070] 2 and 3, the magnetic sensor 110 may further include a second insulating member 67b. The second insulating member 67b is provided between the first insulating member 67a and the element portion 10E. The second insulating member 67b fixes the element portion 10E to the first insulating member 67a. The second insulating member 67b is, for example, an adhesive.

[0071] 2 and 3, in the magnetic sensor 110, the element unit 10E may further include a second substrate 66b. The direction from the second substrate 66b to the first magnetic element 11 and the direction from the second substrate 66b to the first conductive member 21 are aligned along the second direction D2. The direction from the second substrate 66b to the second magnetic element 12 and the direction from the second substrate 66b to the second conductive member 22 are aligned along the second direction D2. The direction from the second substrate 66b to the third magnetic element 13 and the direction from the second substrate 66b to the third conductive member 23 are aligned along the second direction D2. The direction from the second substrate 66b to the fourth magnetic element 14 and the direction from the second substrate 66b to the fourth conductive member 24 are aligned along the second direction D2. The second substrate 66b is, for example, a Si substrate. The second substrate 66b is fixed to the first insulating member 67a by the second insulating member 67b.

[0072] 2 and 3, the element unit 10E may include an element insulating layer 10i, which is provided around the magnetic element, the conductive member, and the magnetic member.

[0073] Below, some examples of the conductive layer current IL in the first period TP1 will be described. 6(a) to 6(d) are schematic views illustrating the operation of the magnetic sensor according to the first embodiment. The horizontal axis of these figures is time tm, and the vertical axis of these figures is the conductive layer current IL.

[0074] 6(a), in one example, the conductive layer current IL may include one pulse (current pulse), and may be a DC pulse.

[0075] 6(b), in one example, the conductive layer current IL may include multiple pulses (current pulses). The conductive layer current IL may be multiple DC pulses.

[0076] As shown in FIG. 6(c), in one example, the conductive layer current IL may include an alternating current. The alternating current may vary in a curved manner. The conductive layer current IL may be, for example, sinusoidal. The conductive layer current IL may be, for example, triangular.

[0077] 6(d), in one example, the conductive layer current IL may be a square wave. Thus, in embodiments, the conductive layer current IL may include one or more pulses, a direct current, and / or an alternating current.

[0078] 7A and 7B are schematic views illustrating the operation of the magnetic sensor according to the first embodiment. The horizontal axis of these figures is time tm, and the vertical axis of these figures is the conductive layer current IL.

[0079] 7(a) and 7(b), the conductive layer current IL may attenuate over time during the first period TP1. In this case, the conductive layer current IL may be an AC current or a DC current.

[0080] An example of the change in electrical resistance in a magnetic element will now be described. FIG. 8 is a graph illustrating the characteristics of the magnetic sensor according to the first embodiment. 8 represents the strength of the external magnetic field Hex applied to the first magnetic element 11. The vertical axis represents the electrical resistance Rx of the first magnetic element 11. FIG. 8 corresponds to the RH characteristics (resistance-magnetic field characteristics).

[0081] As shown in FIG. 8, the electrical resistance Rx has an even function characteristic with respect to the magnetic field (external magnetic field Hex, for example, a magnetic field in the X-axis direction) applied to the first magnetic element 11. For example, the electrical resistance Rx has a first value R1 when a first magnetic field Hex1 is applied to the first magnetic element 11. The electrical resistance Rx has a second value R2 when a second magnetic field Hex2 is applied to the first magnetic element 11. The electrical resistance Rx has a third value R3 when a third magnetic field Hex3 is applied to the first magnetic element 11. The absolute value of the first magnetic field Hex1 is smaller than the absolute value of the second magnetic field Hex2 and smaller than the absolute value of the third magnetic field Hex3. For example, the first magnetic field Hex1 is substantially zero. The direction of the second magnetic field Hex2 is opposite to the direction of the third magnetic field Hex3. The first value R1 is smaller than the second value R2 and smaller than the third value R3.

[0082] In the following, an example will be described in which the first current I1 is an AC current and does not substantially contain a DC component. The first current I1 (AC current) is supplied to the first conductive member 21. An AC magnetic field caused by the AC current is applied to the first magnetic element 11. An example of the change in the electrical resistance Rx at this time will be described.

[0083] 9(a) to 9(c) are graphs illustrating the characteristics of the magnetic sensor according to the first embodiment. Fig. 9(a) shows the characteristics when the signal magnetic field Hsig (external magnetic field) applied to the first magnetic element 11 is 0. Fig. 9(b) shows the characteristics when the signal magnetic field Hsig is positive. Fig. 9(c) shows the characteristics when the signal magnetic field Hsig is negative. These figures show the relationship between the magnetic field H and the resistance R (corresponding to the electrical resistance Rx).

[0084] As shown in Figure 9(a), when the signal magnetic field Hsig is 0, the resistance R exhibits symmetric characteristics with respect to the positive and negative magnetic fields H. When the AC magnetic field Hac is zero, the resistance R is a low resistance Ro. For example, the magnetization of the magnetization free layer rotates in substantially the same way with respect to the positive and negative magnetic fields H. This results in, for example, symmetric resistance increase characteristics. The fluctuation of the resistance R with respect to the AC magnetic field Hac has the same value for positive and negative polarities. The period of change in the resistance R is 1 / 2 the period of the AC magnetic field Hac. The change in the resistance R does not substantially have a frequency component of the AC magnetic field Hac.

[0085] As shown in FIG. 9(b), when a positive signal magnetic field Hsig is applied, the characteristics of the resistance R shift toward the positive magnetic field H. In a positive AC magnetic field Hac, the resistance R increases. In a negative AC magnetic field Hac, the resistance R decreases.

[0086] As shown in FIG. 9(c), when a negative signal magnetic field Hsig is applied, the characteristics of the resistance R shift toward the negative magnetic field H. In a positive AC magnetic field Hac, the resistance R decreases. In a negative AC magnetic field Hac, the resistance R increases.

[0087] When a signal magnetic field Hsig of a predetermined magnitude is applied, the resistance R fluctuates differently depending on whether the AC magnetic field Hac is positive or negative. The period of the fluctuation of the resistance R depending on whether the AC magnetic field Hac is positive or negative is half the period of the AC magnetic field Hac. In response to the signal magnetic field Hsig, an output voltage with an AC frequency component having the same period as the period of the AC magnetic field Hac is generated.

[0088] The above characteristics are obtained when the signal magnetic field Hsig does not change over time. When the signal magnetic field Hsig changes over time, the following applies: The frequency of the signal magnetic field Hsig is defined as the signal frequency fsig. The frequency of the AC magnetic field Hac is defined as the AC frequency fac. In this case, an output corresponding to the signal magnetic field Hsig is generated at a frequency of fac±fsig.

[0089] When the signal magnetic field Hsig changes over time, the signal frequency fsig is, for example, 1 kHz or less. On the other hand, the AC frequency fac is sufficiently higher than the signal frequency fsig. For example, the AC frequency fac is 10 times or more the signal frequency fsig.

[0090] For example, by extracting an output voltage of a component (AC frequency component) having the same period (frequency) as the period (frequency) of the AC magnetic field Hac, the signal magnetic field Hsig can be detected with high accuracy. In the magnetic sensor 110 according to the embodiment, by using such characteristics, the external magnetic field Hex (signal magnetic field Hsig) to be detected can be detected with high sensitivity. In the embodiment, the external magnetic field Hex (signal magnetic field Hsig) and the AC magnetic field Hac due to the first current I1 can be efficiently applied to the first magnetic element 11. High sensitivity can be obtained.

[0091] 10A and 10B are schematic plan views illustrating the magnetic sensor according to the first embodiment. These figures illustrate a magnetic sensor 111 according to the embodiment. In the magnetic sensor 111, a first resistive element 41 and a second resistive element 42 are provided, and the third conductive member 23 and the fourth conductive member 24 are omitted. The configuration of the magnetic sensor 111 other than this may be similar to the configuration of the magnetic sensor 110, for example.

[0092] As shown in FIG. 10(b), the element section 10E further includes a first resistor element 41 and a second resistor element .

[0093] The first resistor element 41 includes a first resistor end portion 41e and a first resistor other end portion 41f. In this example, the direction from the first resistor end portion 41e to the first resistor other end portion 41f is along the first direction D1. The first resistor end portion 41e is electrically connected to the first end portion 11e. The second resistor element 42 includes a second resistor end portion 42e and a second resistor other end portion 42f. In this example, the direction from the second resistor end portion 42e to the second resistor other end portion 42f is along the first direction D1. The second resistor end portion 42e is electrically connected to the first resistor other end portion 41f. The second resistor other end portion 42f is electrically connected to the second resistor other end portion 12f.

[0094] In the detection operation OP1, the second circuit 72 supplies an element current Id (or an element voltage) between a first connection point CP1 between the first end 11e and the first resistor end 41e and a second connection point CP2 between the second other end 12f and the second resistor other end 42f. The element current Id flows through the first resistor element 41 and the second resistor element 42. In this example, the element current Id flows from the first resistor other end 41f to the first resistor end 41e. The element current Id flows from the second resistor other end 42f to the second resistor end 42e.

[0095] In the detection operation OP1, the third circuit 73 is capable of detecting a detection signal Sig1 corresponding to the potential difference between the third connection point CP3 between the first other end 11f and the second end 12e and the fourth connection point CP4 between the first resistor other end 41f and the second resistor end 42e.

[0096] As already explained, the first current I1 flows through the first conductive member 21 and the second conductive member 22 (see FIG. 10(a)). The magnetic sensor 111 uses a bridge circuit (so-called half-bridge circuit) including the first magnetic element 11, the second magnetic element 12, the first resistive element 41, and the second resistive element 42. High-precision detection with reduced noise is possible.

[0097] The first resistance element 41 and the second resistance element 42 may have any configuration. For example, the first resistance element 41 may have at least a part of the configuration of the third magnetic element 13. For example, the second resistance element 42 may have at least a part of the configuration of the fourth magnetic element 14.

[0098] 11A and 11B are schematic cross-sectional views illustrating the magnetic sensor according to the first embodiment. These figures illustrate a magnetic sensor 112 according to the embodiment. In the magnetic sensor 112, the position of the conductive layer 65 is different from the position of the conductive layer 65 in the magnetic sensor 110. Except for this, the configuration of the magnetic sensor 112 may be the same as the configuration of the magnetic sensor 110 or the magnetic sensor 111.

[0099] The magnetic sensor 112 includes a first substrate 66a, a second substrate 66b, and a first insulating member 67a. The first insulating member 67a is provided between the first substrate 66a and the structure 10x.

[0100] The structure 10x includes an element portion 10E, a conductive layer 65, and a second substrate 66b. The conductive layer 65 is provided between the second substrate 66b and the element portion 10E. The structure 10x is a sensor chip including the element portion 10E and the conductive layer 65. The conductive layer 65 is provided in the sensor chip.

[0101] A second insulating member 67b may be provided in the magnetic sensor 112. The second insulating member 67b is provided between the first insulating member 67a and the second substrate 66b.

[0102] An example of the circuit section 70 will now be described. FIG. 12 is a schematic view illustrating the magnetic sensor according to the first embodiment. 12, the circuit section 70 includes a first circuit 71, a second circuit 72, a third circuit 73, and a current circuit 74. The circuit section 70 may include a first control unit 75a and a second control unit 75b.

[0103] The first control unit 75a can control the entire circuit. For example, the first control unit 75a sets the first period TP1 and the second period TP2.

[0104] The first control unit 75a controls the second control unit 75b. The second control unit 75b can control the current circuit 74 (power supply). During a first period TP1, the current circuit 74 supplies the conductive layer current IL to the conductive layer 65. During a second period TP2, the conductive layer current IL is not supplied to the conductive layer 65.

[0105] For example, the first control unit 75a controls the first circuit 71 and the second circuit 72. For example, in the second period TP2, a first current I1 is supplied from the first circuit 71 to the conductive member (element unit 10E). For example, in the second period TP2, an element current Id is supplied from the second circuit 72 to the magnetic element (element unit 10E).

[0106] The third circuit 73 includes, for example, an amplifier circuit 73a, a phase detection circuit 73b, and an output circuit 73c. ​​The amplifier circuit 73a amplifies, for example, the detection signal Sig1 obtained from the bridge circuit. The phase detection circuit 73b detects the output from the amplifier circuit 73a using the AC component of the first current I1 as a reference signal 71s. The reference signal 71s is obtained from the first circuit 71. The output circuit 73c can output the signal obtained from the phase detection circuit 73b to the outside.

[0107] In this way, the third circuit 73 can detect the detection signal Sig1 using the AC component included in the first current I1 as the reference signal 71s, enabling highly accurate detection with suppressed noise.

[0108] (Second embodiment) The second embodiment relates to an examination device, which may include a diagnostic device, as will be described later.

[0109] FIG. 13 is a schematic perspective view showing an inspection device according to the second embodiment. As shown in Fig. 13, an inspection device 710 according to the second embodiment includes a sensor 150a (magnetic sensor) and a processing unit 770. The sensor 150a may be the sensor according to the first embodiment or a variation thereof. The processing unit 770 processes an output signal obtained from the sensor 150a. The processing unit 770 may compare the signal obtained from the sensor 150a with a reference value. The processing unit 770 can output an inspection result based on the processing result.

[0110] For example, the test object 680 is tested by the test device 710. The test object 680 is, for example, an electronic device (including a semiconductor circuit, etc.). The test object 680 may also be, for example, a battery 610.

[0111] For example, the sensor 150a according to the embodiment may be used together with the battery 610. For example, the battery system 600 includes the battery 610 and the sensor 150a. The sensor 150a can detect a magnetic field generated by a current flowing through the battery 610.

[0112] FIG. 14 is a schematic plan view showing the inspection device according to the second embodiment. 14, the sensor 150a includes, for example, a plurality of sensors according to the embodiment. In this example, the sensor 150a includes a plurality of sensors (such as element units 10E of the magnetic sensors 110). The plurality of sensors are arranged, for example, along two directions (such as the X-axis direction and the Y-axis direction). The plurality of sensors (magnetic sensors 110) are provided, for example, on a substrate.

[0113] The sensor 150a can detect a magnetic field generated by a current flowing through the inspection target 680 (which may be, for example, a battery 610). For example, when the battery 610 approaches an abnormal state, an abnormal current may flow through the battery 610. By detecting the abnormal current with the sensor 150a, it is possible to know a change in the state of the battery 610. For example, with the sensor 150a placed close to the battery 610, the entire battery 610 can be inspected in a short time using sensor group driving means in two directions. The sensor 150a may be used to inspect the battery 610 during the manufacture of the battery 610.

[0114] The sensor according to the embodiment can be applied to an inspection device 710 such as a diagnostic device, for example. FIG. 15 is a schematic diagram showing a sensor and an inspection device according to an embodiment. 15, a diagnostic device 500, which is an example of an inspection device 710, includes a sensor 150 (magnetic sensor). The sensor 150 includes the sensors described in relation to the first embodiment and modifications thereof.

[0115] In the diagnostic device 500, the sensor 150 is, for example, a magnetoencephalograph. The magnetoencephalograph detects magnetic fields emitted by cranial nerves. When the sensor 150 is used in a magnetoencephalograph, the size of the magnetic element included in the sensor 150 is, for example, 1 mm or more and less than 10 mm. This size is, for example, the length including the MFC.

[0116] As shown in Fig. 15, the sensor 150 (magnetoencephalograph) is worn on, for example, the head of a human body. The sensor 150 (magnetoencephalograph) includes a sensor unit 301. The sensor 150 (magnetoencephalograph) may include a plurality of sensor units 301. The number of the plurality of sensor units 301 is, for example, approximately 100 (for example, not less than 50 and not more than 150). The plurality of sensor units 301 are provided on a flexible base 302.

[0117] The sensor 150 may include, for example, a circuit for differential detection, etc. The sensor 150 may also include a sensor (for example, a potential terminal or an acceleration sensor) separate from the sensor.

[0118] The size of the sensor 150 is smaller than that of a conventional SQUID sensor. This makes it easy to install multiple sensor units 301. It also makes it easy to install multiple sensor units 301 together with other circuits. It also makes it easy for multiple sensor units 301 to coexist with other sensors.

[0119] The base 302 may include an elastic material such as silicone resin. For example, a plurality of sensor units 301 are connected to the base 302. The base 302 can be attached to the head, for example.

[0120] The input / output cord 303 of the sensor unit 301 is connected to a sensor driving unit 506 and a signal input / output unit 504 of the diagnostic device 500. The sensor unit 301 performs magnetic field measurement based on power from the sensor driving unit 506 and a control signal from the signal input / output unit 504. The measurement result is input to the signal input / output unit 504. The signal obtained by the signal input / output unit 504 is supplied to a signal processing unit 508. The signal processing unit 508 performs processing such as noise removal, filtering, amplification, and signal calculation. The signal processed by the signal processing unit 508 is supplied to a signal analysis unit 510. The signal analysis unit 510 extracts, for example, a specific signal for magnetoencephalography. The signal analysis unit 510 performs signal analysis, for example, to align the signal phase.

[0121] The output of the signal analysis unit 510 (data after signal analysis) is supplied to a data processing unit 512. The data processing unit 512 performs data analysis. In this data analysis, for example, image data such as MRI (Magnetic Resonance Imaging) can be incorporated. In this data analysis, for example, scalp potential information such as EEG (Electroencephalogram) can be incorporated. By the data analysis, for example, neural firing point analysis or inverse problem analysis can be performed.

[0122] The results of the data analysis are supplied to, for example, the imaging diagnostic unit 516. Imaging is performed in the imaging diagnostic unit 516. The imaging assists diagnosis.

[0123] The above series of operations is controlled, for example, by a control mechanism 502. For example, necessary data such as primary signal data or metadata during data processing is stored in a data server. The data server and the control mechanism may be integrated.

[0124] The diagnostic device 500 according to the embodiment includes a sensor 150 and a processing unit that processes an output signal obtained from the sensor 150. The processing unit includes, for example, at least one of a signal processing unit 508 and a data processing unit 512. The processing unit includes, for example, a computer.

[0125] In the sensor 150 shown in Fig. 15, the sensor unit 301 is placed on the head of the human body. The sensor unit 301 may also be placed on the chest of the human body. This allows for cardiac magnetism measurement. For example, the sensor unit 301 may also be placed on the abdomen of a pregnant woman. This allows for fetal heart rate testing.

[0126] The sensor device including the subject is preferably placed in a shielded room, which can suppress the influence of, for example, geomagnetism or magnetic noise.

[0127] For example, a mechanism may be provided to locally shield the measurement site on the human body or the sensor unit 301. For example, a shielding mechanism may be provided in the sensor unit 301. For example, effective shielding may be performed in signal analysis or data processing.

[0128] In the embodiment, the substrate 302 may be flexible or may not have substantial flexibility. In the example shown in FIG. 15, the substrate 302 is a continuous film processed into a hat shape. The substrate 302 may be net-shaped. This may provide, for example, good wearability. For example, the substrate 302 may adhere better to the human body. The substrate 302 may be helmet-shaped and hard.

[0129] FIG. 16 is a schematic diagram showing an inspection device according to an embodiment. In the example shown in FIG. 16, a sensor section 301 is provided on a flat hard substrate 305 .

[0130] In the example shown in Fig. 16, the input and output of signals obtained from the sensor unit 301 are the same as the input and output described with reference to Fig. 15. In the example shown in Fig. 16, the processing of signals obtained from the sensor unit 301 is the same as the processing described with reference to Fig. 15.

[0131] There is a reference example in which a SQUID (Superconducting Quantum Interference Device) sensor is used as a device to measure weak magnetic fields such as those generated by living organisms. However, because this reference example uses superconductivity, the device is large and consumes a lot of power, which places a heavy burden on the subject (patient) to be measured.

[0132] According to the embodiment, the device can be made smaller. Power consumption can be reduced. The burden on the measurement subject (patient) can be reduced. According to the embodiment, the signal-to-noise ratio of magnetic field detection can be improved. Sensitivity can be improved.

[0133] The embodiment may include the following configurations (e.g., technical solutions). (Configuration 1) an element unit including a first magnetic element, a second magnetic element, a first conductive member, and a second conductive member, the first magnetic element includes a first end and a first other end, and a direction from the first end to the first other end is along a first direction; the second magnetic element includes a second end and a second other end, a direction from the second end to the second other end is along the first direction, and the second end is electrically connected to the first other end; the first conductive member includes a first portion and a first other portion, the first portion corresponding to the first end portion, and the first other portion corresponding to the first other end portion; the element portion, wherein the second conductive member includes a second portion and a second other portion, the second portion corresponding to the second end portion, and the second other portion corresponding to the second other end portion; a conductive layer, wherein a second direction from the conductive layer to the element portion intersects with the first direction, the conductive layer includes a first conductive portion and a first other conductive portion, and a third direction from the first conductive portion to the first other conductive portion intersects with a plane including the first direction and the second direction; A magnetic sensor comprising:

[0134] (Configuration 2) a current circuit; The first circuit, Furthermore, the current circuit supplies a conductive layer current between the first conductive portion and the first other conductive portion during a first period; the current circuit does not supply the conductive layer current between the first conductive portion and the first other conductive portion during a second period; 2. The magnetic sensor according to claim 1, wherein the first circuit is capable of supplying a first current including an AC component to the first conductive member and the second conductive member during the second period.

[0135] (Configuration 3) 3. The magnetic sensor according to claim 2, wherein the first circuit does not supply the first current to the first conductive member and the second conductive member during the first period.

[0136] (Configuration 4) A second circuit; The third circuit and Furthermore, the second circuit and the third circuit are capable of performing a detection operation during the second period; The magnetic sensor of configuration 3, wherein in the detection operation, the second circuit supplies an element current or an element voltage to the first magnetic element and the second magnetic element, and the third circuit is capable of detecting a signal corresponding to the difference between a first electrical resistance of the first magnetic element and a second electrical resistance of the second magnetic element.

[0137] (Configuration 5) 5. The magnetic sensor according to configuration 4, wherein the second circuit and the third circuit do not perform the detection operation during the first period.

[0138] (Configuration 6) the device current flows from the first other end to the first end, the device current flows from the second other end to the second end, 5. The magnetic sensor of claim 4, wherein when the first current flows from the second other portion to the second portion, the first current flows from the first portion to the first other portion.

[0139] (Configuration 7) the element unit further includes a third magnetic element, a fourth magnetic element, a third conductive member, and a fourth conductive member; the third magnetic element includes a third end and a third other end, a direction from the third end to the third other end is along the first direction, and the third end is electrically connected to the first end; the fourth magnetic element includes a fourth end and a fourth other end, a direction from the fourth end to the fourth other end is along the first direction, the fourth end is electrically connected to the third other end, and the fourth other end is electrically connected to the second other end, the third conductive member includes a third portion and a third other portion, the third portion corresponds to the third end portion, and the third other portion corresponds to the third other end portion; the fourth conductive member includes a fourth portion and a fourth other portion, the fourth portion corresponds to the fourth end portion, and the fourth other portion corresponds to the fourth other end portion; the first circuit is capable of supplying the first current to the third conductive member and the fourth conductive member during the second period; In the detection operation, the second circuit supplies the element current or the element voltage between a first connection point between the first end and the third end and a second connection point between the second other end and the fourth other end, the device current flows from the third other end to the third end, 7. The magnetic sensor according to configuration 6, wherein the element current flows from the fourth other end to the fourth end.

[0140] (Configuration 8) The magnetic sensor of configuration 7, wherein the third circuit is capable of detecting a detection signal corresponding to a potential difference between a third connection point between the first other end and the second end and a fourth connection point between the third other end and the fourth end during the detection operation.

[0141] (Configuration 9) 9. The magnetic sensor according to configuration 8, wherein the third circuit is capable of detecting the detection signal using the AC component as a reference signal.

[0142] (Configuration 10) the element portion further includes a first resistor element and a second resistor element, the first resistor element includes a first resistor end portion and a first resistor other end portion, the first resistor end portion being electrically connected to the first end portion; the second resistor element includes a second resistor end portion and a second resistor other end portion, the second resistor end portion is electrically connected to the first resistor other end portion, and the second resistor other end portion is electrically connected to the second resistor other end portion; In the detection operation, the second circuit supplies the element current or the element voltage between a first connection point between the first end and the first resistor end and a second connection point between the second other end and the second resistor end, the element current flows from the other end of the first resistor to the end of the first resistor, 7. The magnetic sensor according to configuration 6, wherein the element current flows from the other end of the second resistor to the end of the second resistor.

[0143] (Configuration 11) The magnetic sensor of configuration 10, wherein the third circuit is capable of detecting a detection signal corresponding to a potential difference between a third connection point between the first other end and the second end and a fourth connection point between the other end of the first resistor and the second resistor end during the detection operation.

[0144] (Configuration 12) a first substrate; A first insulating member; Furthermore, the conductive layer is provided between the first substrate and the element portion, 2. The magnetic sensor according to claim 1, wherein the first insulating member is provided between the conductive layer and the element portion.

[0145] (Configuration 13) Further comprising a second insulating member; the second insulating member is provided between the first insulating member and the element portion, 13. The magnetic sensor according to claim 12, wherein the second insulating member fixes the element portion to the first insulating member.

[0146] (Configuration 14) the element portion further includes a second substrate, 14. The magnetic sensor of claim 13, wherein a direction from the second substrate to the first magnetic element and a direction from the second substrate to the first conductive member are along the second direction.

[0147] (Configuration 15) a first substrate; A second substrate; A first insulating member; Furthermore, the first insulating member is provided between the first substrate and the structure, the structure includes the element portion, the conductive layer, and the second substrate, 2. The magnetic sensor according to claim 1, wherein the conductive layer is provided between the second substrate and the element portion.

[0148] (Configuration 16) 7. The magnetic sensor according to any one of configurations 2 to 6, wherein the conductive layer current includes at least one of one or a plurality of pulses, a direct current, and an alternating current.

[0149] (Configuration 17) 7. The magnetic sensor according to any one of configurations 2 to 6, wherein the conductive layer current attenuates over time during the first period.

[0150] (Configuration 18) the element portion further includes a first magnetic member and a first opposing magnetic member; the first magnetic member includes a first magnetic end portion and a first magnetic other end portion, and a direction from the first magnetic end portion to the first magnetic other end portion is along the third direction; the first opposing magnetic member includes a first opposing magnetic end portion and a first opposing magnetic other end portion, and a direction from the first opposing magnetic end portion to the first opposing magnetic other end portion is along the third direction; A magnetic sensor described in any one of configurations 1 to 17, wherein the position of at least a portion of the first magnetic element in the third direction is between the position of the first magnetic other end portion in the third direction and the position of the first opposing magnetic end portion in the third direction.

[0151] (Configuration 19) A magnetic sensor described in any one of configurations 1 to 18, wherein the position of the first conductive member in the second direction is between the position of the conductive layer in the second direction and the position of the first magnetic element in the second direction.

[0152] (Configuration 20) The magnetic sensor according to any one of configurations 1 to 19, a processing unit for processing an output signal obtained from the magnetic sensor; An inspection device equipped with:

[0153] According to the embodiment, it is possible to provide a magnetic sensor and an inspection device that can improve sensitivity.

[0154] In this specification, "vertical" and "parallel" do not only mean strictly vertical and strictly parallel, but also include variations in the manufacturing process, and may mean substantially vertical and substantially parallel.

[0155] The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific configurations of each element included in the magnetic sensor, such as the element portion, magnetic element, magnetic layer, non-magnetic layer, conductive member, conductive layer, and circuit, are within the scope of the present invention as long as a person skilled in the art can implement the present invention in a similar manner and obtain similar effects by appropriately selecting them from known ranges.

[0156] Furthermore, any combination of two or more elements of each specific example within the scope of technical feasibility is also included within the scope of the present invention as long as it includes the gist of the present invention.

[0157] In addition, all magnetic sensors and inspection devices that can be implemented by a person skilled in the art by making appropriate design modifications based on the magnetic sensors and inspection devices described above as embodiments of the present invention also fall within the scope of the present invention, as long as they include the gist of the present invention.

[0158] In addition, within the scope of the concept of the present invention, a person skilled in the art may come up with various modifications and alterations, and these modifications and alterations are also considered to fall within the scope of the present invention.

[0159] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be embodied in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, and are also included in the scope of the invention and its equivalents as defined in the claims. [Explanation of symbols]

[0160] 10E: element portion, 10i: element insulating layer, 10x: structure, 11-14...first to fourth magnetic elements, 11a-14a: first to fourth magnetic layers, 11b-14b: first to fourth opposing magnetic layers, 11e-14e: first to fourth end portions, 11f-14f: first to fourth other end portions, 11n-14n: first to fourth non-magnetic layers, 21-24: first to fourth conductive members, 21e-24e: first to fourth portions, 21f-24f: first to fourth other portions, 41, 42: first and second resistor elements, 41e, 42e: first and second resistor end portions, 41f, 42f: first and second resistor other end portions, 51-54: first to fourth magnetic members, 51A to 54A: first to fourth opposing magnetic members, 51Ae to 54Ae: first to fourth opposing magnetic end portions, 51Af to 54Af: first to fourth opposing magnetic other end portions, 51e to 54e: first to fourth magnetic end portions, 51f to 54f: first to fourth magnetic other end portions, 65: conductive layer, 65e: first conductive portion, 65f: first other conductive portion, 66a, 66b: first and second substrates, 67a, 67b: first and second insulating members, 70: circuit portion, 71 to 73: first to third circuits, 71s: reference signal, 73a: amplifier circuit, 73b: phase detection circuit, 73c: output circuit, 74: current circuit, 75a, 75b: first and second control portions, 110 to 112: magnetic sensors, 150, 150a: sensor, 301: sensor unit, 302: base, 303: input / output code, 305: base, 500: diagnostic device, 502: control mechanism, 504: signal input / output unit, 506: sensor drive unit, 508: signal processing unit, 510: signal analysis unit, 512: data processing unit, 516: imaging diagnostic unit, 600: battery system, 610: battery, 680: inspection object, 710: inspection device, 770: processing unit, CP1 to CP4: first to fourth connection points, D1 to D3: first to third directions, H: magnetic field, Hac: AC magnetic field, Hex: external magnetic field, Hex1 to Hex3: first to third magnetic fields, Hsig: signal magnetic field, I1: first current, IL: conductive layer current, Id: element current, OP1: detection operation, R: Resistance, R1 to R3: 1st to 3rd values, Ro: Low resistance, Rx: Electrical resistance, SS1: Initialization start signal, Sig1: Detection signal, TP1, TP2: 1st and 2nd periods

Claims

1. an element unit including a first magnetic element, a second magnetic element, a first conductive member, and a second conductive member, the first magnetic element includes a first end and a first other end, and a direction from the first end to the first other end is along a first direction; the second magnetic element includes a second end and a second other end, a direction from the second end to the second other end is along the first direction, and the second end is electrically connected to the first other end; the first conductive member includes a first portion and a first other portion, the first portion corresponding to the first end portion, and the first other portion corresponding to the first other end portion; the element portion, wherein the second conductive member includes a second portion and a second other portion, the second portion corresponding to the second end portion, and the second other portion corresponding to the second other end portion; a conductive layer, wherein a second direction from the conductive layer to the element portion intersects with the first direction, the conductive layer includes a first conductive portion and a first other conductive portion, and a third direction from the first conductive portion to the first other conductive portion intersects with a plane including the first direction and the second direction; A magnetic sensor comprising:

2. a current circuit; A first circuit; Furthermore, the current circuit supplies a conductive layer current between the first conductive portion and the first other conductive portion during a first period; the current circuit does not supply the conductive layer current between the first conductive portion and the first other conductive portion during a second period; The magnetic sensor according to claim 1 , wherein the first circuit is capable of supplying a first current including an AC component to the first conductive member and the second conductive member during the second period.

3. A second circuit; A third circuit; Furthermore, the second circuit and the third circuit are capable of performing a detection operation during the second period; 3. The magnetic sensor of claim 2, wherein in the detection operation, the second circuit supplies an element current or an element voltage to the first magnetic element and the second magnetic element, and the third circuit is capable of detecting a signal corresponding to a difference between a first electrical resistance of the first magnetic element and a second electrical resistance of the second magnetic element.

4. the device current flows from the first other end to the first end, the device current flows from the second other end to the second end, The magnetic sensor according to claim 3 , wherein when the first current flows from the second other portion to the second portion, the first current flows from the first portion to the first other portion.

5. the element unit further includes a third magnetic element, a fourth magnetic element, a third conductive member, and a fourth conductive member; the third magnetic element includes a third end and a third other end, a direction from the third end to the third other end is along the first direction, and the third end is electrically connected to the first end; the fourth magnetic element includes a fourth end and a fourth other end, a direction from the fourth end to the fourth other end is along the first direction, the fourth end is electrically connected to the third other end, and the fourth other end is electrically connected to the second other end, the third conductive member includes a third portion and a third other portion, the third portion corresponding to the third end portion, and the third other portion corresponding to the third other end portion; the fourth conductive member includes a fourth portion and a fourth other portion, the fourth portion corresponding to the fourth end portion, and the fourth other portion corresponding to the fourth other end portion; the first circuit is capable of supplying the first current to the third conductive member and the fourth conductive member during the second period; In the detection operation, the second circuit supplies the element current or the element voltage between a first connection point between the first end and the third end and a second connection point between the second other end and the fourth other end, the device current flows from the third other end to the third end, The magnetic sensor according to claim 4 , wherein the element current flows from the fourth other end to the fourth end.

6. 6. The magnetic sensor of claim 5, wherein the third circuit is capable of detecting a detection signal corresponding to a potential difference between a third connection point between the first other end and the second end and a fourth connection point between the third other end and the fourth end during the detection operation.

7. The magnetic sensor according to claim 6 , wherein the third circuit is capable of detecting the detection signal using the AC component as a reference signal.

8. a first substrate; A first insulating member; Furthermore, the conductive layer is provided between the first substrate and the element portion, The magnetic sensor according to claim 1 , wherein the first insulating member is provided between the conductive layer and the element portion.

9. A magnetic sensor according to any one of claims 1 to 8; a processing unit for processing an output signal obtained from the magnetic sensor; An inspection device equipped with:

Images