Magnetic sensor

Abstract

The magnetic sensor includes at least one MR element and at least one magnetic field generator configured to generate a bias magnetic field. The at least one magnetic field generating body has a first end portion and a second end portion, and includes a first portion including the first end portion and a second portion including the second end portion. The film thickness in the first portion is greater than the film thickness in the second portion. The at least one MR element has a third end portion and a fourth end portion, and is configured such that an interval between the first end portion and the third end portion is smaller than an interval between the second end portion and the fourth end portion.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a magnetic sensor configured to apply a bias magnetic field to a magnetic resistance effect element. BACKGROUND

[0002] In recent years, magnetic sensors are used in various applications. As a magnetic sensor, a magnetic sensor using a spin valve type magnetic resistance effect element provided on a substrate is known. The spin valve type magnetic resistance effect element has a magnetization fixed layer whose direction of magnetization is fixed, a free layer whose direction of magnetization can change depending on the direction of an applied magnetic field, and a gap layer disposed between the magnetization fixed layer and the free layer. In many cases, the spin valve type magnetic resistance effect element provided on the substrate is configured to have sensitivity with respect to a magnetic field in a direction parallel to the surface of the substrate. Therefore, such a magnetic resistance effect element is suitable for detecting a magnetic field whose direction changes in a plane parallel to the surface of the substrate.

[0003] On the other hand, in a system including a magnetic sensor, there are cases where a magnetic field including a component in a direction perpendicular to the surface of the substrate is to be detected using a magnetic resistance effect element provided on the substrate. In this case, by disposing the magnetic resistance effect element on an inclined surface formed on the substrate, a magnetic field including a component in a direction perpendicular to the surface of the substrate can be detected.

[0004] However, there are magnetic sensors that have a unit that applies a bias magnetic field to a magnetic resistance effect element. The bias magnetic field is used, for example, to make the magnetic resistance effect element linearly respond to changes in the strength of an object magnetic field that is a magnetic field to be detected. In addition, in a magnetic sensor using a spin valve type magnetic resistance effect element, the bias magnetic field is also used to single-domainize the free layer when there is no object magnetic field, and to make the direction of magnetization of the free layer face a certain direction.

[0005] In Japanese Patent Application Publication No. 2007-157979, a magnetic sensor provided with an X-axis sensor, a Y-axis sensor, and a Z-axis sensor on a substrate is disclosed. A V-shaped groove is formed in a thick film on the substrate. The inclined surface of the groove has a first inclined surface located in the upper half of the groove, and a second inclined surface located in the lower half of the groove and having a steeper angle with respect to the surface of the substrate than the first inclined surface. A giant magnetoresistance element constituting the Z-axis sensor has a band-shaped portion disposed at a position where flatness is good along the long direction of the inclined surface and in the central portion of the second inclined surface, and a bias magnet portion that applies a bias magnetic field to the band-shaped portion.

[0006] In Japanese Patent Application Publication No. 2016-176911, a magnetic sensor is disclosed that has a magnetic resistance effect element, and two magnetic field generating bodies disposed to sandwich the magnetic resistance effect element. The magnetic field generating bodies include a layer-stacked anti-ferromagnetic layer and a ferromagnetic layer, and are configured to apply a bias magnetic field to the magnetic resistance effect element.

[0007] In the magnetic field generating body disclosed in Japanese Patent Application Publication No. 2016-176911, the strength of the bias magnetic field generated by the magnetic field generating body can be increased by increasing the volume of the magnetic field generating body. However, as in the magnetic sensor disclosed in Japanese Patent Application Publication No. 2007-157979, when the magnetic field generating body is to be formed on an inclined surface, the volume of the magnetic field generating body sometimes becomes smaller than in the case where the magnetic field generating body is formed on a flat surface. As a result, a bias magnetic field of sufficient strength cannot sometimes be applied to the magnetoresistance effect element. SUMMARY

[0008] An object of the present disclosure is to provide a magnetic sensor capable of increasing the strength of a bias magnetic field applied to a magnetoresistance effect element.

[0009] The magnetic sensor of the first aspect of the embodiment of the present disclosure includes at least one magnetoresistance effect element and at least one magnetic field generating body including a ferromagnetic portion composed of a ferromagnetic material and an antiferromagnetic portion composed of an antiferromagnetic material and exchange-coupled with the ferromagnetic portion, and configured to generate a bias magnetic field applied to the at least one magnetoresistance effect element. The at least one magnetoresistance effect element and the at least one magnetic field generating body are arranged along a first direction, and configured such that at least a portion of the at least one magnetoresistance effect element overlaps the at least one magnetic field generating body when viewed from the first direction. The at least one magnetic field generating body has a first end portion and a second end portion located at both ends in a second direction intersecting the first direction, and a first face connecting the first end portion and the second end portion, and has a film thickness in a direction perpendicular to the first face, and includes a first portion including the first end portion and a second portion including the second end portion. In any cross section intersecting the at least one magnetic field generating body and perpendicular to the first direction, the film thickness in the first portion is greater than the film thickness in the second portion. The at least one magnetoresistance effect element has a third end portion and a fourth end portion located at both ends in the second direction, and is configured such that the interval between the first end portion and the third end portion in the second direction is smaller than the interval between the second end portion and the fourth end portion in the second direction.

[0010] A magnetic sensor of a second aspect of an embodiment of the present disclosure includes: a substrate having an upper surface; a support member disposed on the substrate; at least one magnetoresistance effect element disposed on the support member; and at least one magnetic field generating body disposed on the support member, including a ferromagnetic portion composed of a ferromagnetic material and an antiferromagnetic portion composed of an antiferromagnetic material and exchange-coupled with the ferromagnetic portion, and configured to generate a bias magnetic field applied to the at least one magnetoresistance effect element. The at least one magnetoresistance effect element and the at least one magnetic field generating body are arranged along a first direction, and are configured so that, when viewed from the first direction, at least a portion of the at least one magnetoresistance effect element overlaps the at least one magnetic field generating body. The at least one magnetic field generating body has a first end portion and a second end portion located at both ends in a second direction intersecting the first direction. The at least one magnetoresistance effect element has a third end portion and a fourth end portion located at both ends in the second direction. The first end portion is located farther from the upper surface than the second end portion. The third end portion is located farther from the upper surface than the fourth end portion. The at least one magnetoresistance effect element is configured so that a distance between the first end portion and the third end portion in the second direction is smaller than a distance between the second end portion and the fourth end portion in the second direction.

[0011] A magnetic sensor of a third aspect of an embodiment of the present disclosure includes: a substrate having an upper surface; a support member disposed on the substrate; at least one magnetoresistance effect element disposed on the support member; and at least one magnetic field generating body disposed on the support member, including a ferromagnetic portion composed of a ferromagnetic material and an antiferromagnetic portion composed of an antiferromagnetic material and exchange-coupled with the ferromagnetic portion, and configured to generate a bias magnetic field applied to the at least one magnetoresistance effect element. The at least one magnetoresistance effect element and the at least one magnetic field generating body are arranged along a first direction, and are configured so that, when viewed from the first direction, at least a portion of the at least one magnetoresistance effect element overlaps the at least one magnetic field generating body. The support member has an opposing surface opposite to the at least one magnetoresistance effect element and the at least one magnetic field generating body. The at least one magnetic field generating body has a first end portion and a second end portion located at both ends in a second direction intersecting the first direction. In any cross section intersecting the at least one magnetic field generating body and perpendicular to the first direction, an inclination angle of the opposing surface with respect to the upper surface is larger at a second position on the opposing surface closest to the second end portion than at a first position on the opposing surface closest to the first end portion. The at least one magnetoresistance effect element has a third end portion and a fourth end portion located at both ends in the second direction, and is configured so that a distance between the first end portion and the third end portion in the second direction is smaller than a distance between the second end portion and the fourth end portion in the second direction.

[0012] In the magnetic sensors of the first to third aspects of this disclosure, at least one magnetoresistive element is configured such that the distance between its first and third ends is smaller than the distance between its second and fourth ends. Therefore, according to this disclosure, the strength of the bias magnetic field applied to at least one magnetoresistive element can be increased.

[0013] Other objects, features and advantages of this disclosure will become fully apparent from the following description. Attached Figure Description

[0014] Figure 1 This is a perspective view of a magnetic sensor device that includes a magnetic sensor according to a first exemplary embodiment of the present disclosure.

[0015] Figure 2 It means Figure 1 The side view of the magnetic sensor device shown.

[0016] Figure 3 It means Figure 1 The diagram shows the functional block diagram of the magnetic sensor device.

[0017] Figure 4 This is a circuit diagram illustrating the circuit structure of the first detection circuit in a first exemplary embodiment of the present disclosure.

[0018] Figure 5 This is a circuit diagram illustrating the circuit structure of the second detection circuit in a first exemplary embodiment of the present disclosure.

[0019] Figure 6 This is a top view illustrating a portion of a magnetic sensor according to a first exemplary embodiment of the present disclosure.

[0020] Figure 7 It means Figure 6 A cross-sectional view of a portion of the section at the location indicated by line 7-7.

[0021] Figure 8 It means Figure 6 A cross-sectional view of a portion of the section at the location indicated by line 8-8.

[0022] Figure 9 This is a top view showing the magnetoresistive element, magnetic field generator, lower electrode, and upper electrode in a first exemplary embodiment of the present disclosure.

[0023] Figure 10 This is a perspective view showing a magnetoresistive element in a first exemplary embodiment of the present disclosure.

[0024] Figure 11 This is a side view showing a magnetic field generator in a first exemplary embodiment of the present disclosure.

[0025] Figure 12 FIG. 1 is a cross-sectional view showing a portion of a magnetic sensor in a first exemplary embodiment of the present disclosure.

[0026] Figure 13 FIG. 1 is a cross-sectional view showing a portion of a magnetic sensor in a first exemplary embodiment of the present disclosure.

[0027] Figure 14 FIG. 2 is an explanatory diagram for explaining a shape of a magnetic field generating body in the first exemplary embodiment of the present disclosure.

[0028] Figure 15 FIG. 3 is an explanatory diagram for explaining a positional relationship between the magnetic field generating body and a magnetoresistance effect element in the first exemplary embodiment of the present disclosure.

[0029] Figure 16 FIG. 4 is a cross-sectional view showing one step in a manufacturing method of the magnetic sensor in the first exemplary embodiment of the present disclosure.

[0030] Figure 17 FIG. 5 is a cross-sectional view showing a step following the step shown in FIG. 4. Figure 16

[0031] Figure 18 FIG. 6 is an explanatory diagram for explaining a shape of the magnetic field generating body in a first modified example of the magnetic sensor in the first exemplary embodiment of the present disclosure.

[0032] Figure 19 FIG. 7 is a plan view showing a magnetoresistance effect element, a magnetic field generating body, a lower electrode, and an upper electrode in a second modified example of the magnetic sensor in the first exemplary embodiment of the present disclosure.

[0033] Figure 20 FIG. 8 is a side view showing the magnetic field generating body in a third modified example of the magnetic sensor in the first exemplary embodiment of the present disclosure.

[0034] Figure 21 FIG. 9 is a side view showing the magnetic field generating body in a fourth modified example of the magnetic sensor in the first exemplary embodiment of the present disclosure.

[0035] Figure 22 FIG. 10 is a side view showing the magnetic field generating body in a fifth modified example of the magnetic sensor in the first exemplary embodiment of the present disclosure.

[0036] Figure 23 FIG. 11 is a side view showing the magnetic field generating body in a sixth modified example of the magnetic sensor in the first exemplary embodiment of the present disclosure.

[0037] Figure 24 ​is a side view showing a magnetic field generating body in a seventh modification of the magnetic sensor of the first exemplary embodiment of the present disclosure.

[0038] Figure 25 is a cross-sectional view showing a part of the magnetic sensor in the second exemplary embodiment of the present disclosure.

[0039] Figure 26 is an explanatory view for explaining a shape and positional relationship of a magnetic field generating body and a magnetoresistance effect element in the third exemplary embodiment of the present disclosure.

[0040] Figure 27 is an explanatory view for explaining a shape and positional relationship of a magnetic field generating body and a magnetoresistance effect element in a modification of the magnetic sensor of the third exemplary embodiment of the present disclosure. DETAILED DESCRIPTION

[0041] [First Exemplary Embodiment]

[0042] Hereinafter, exemplary embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. First, a magnetic sensor device including a magnetic sensor of the first exemplary embodiment of the present disclosure will be described with reference to Figures 1 to 3 A structure of a magnetic sensor device including a magnetic sensor of the first exemplary embodiment of the present disclosure will be described. Figure 1 is a perspective view showing the magnetic sensor device 100. Figure 2 is a side view showing the magnetic sensor device 100. Figure 3 is a functional block diagram showing a structure of the magnetic sensor device 100.

[0043] The magnetic sensor device 100 in the exemplary embodiment is provided with the magnetic sensor 1 of the exemplary embodiment and a processor 2. The magnetic sensor 1 is configured to detect a magnetic field of a detection object of the magnetic sensor 1, that is, an object magnetic field, and generate at least one detection signal. The magnetic sensor 1 can be a geomagnetic sensor that detects geomagnetism, can be a magnetic sensor for a position detection device that detects a position of a magnet moving in a specific direction, can be a magnetic sensor for an angle sensor or a magnetic encoder that detects a rotating magnetic field, or can be a magnetic sensor for a current sensor that detects a magnetic field generated by a detected current.

[0044] The processor 2 is configured to generate at least one detection value having a corresponding relationship with the object magnetic field on the basis of the at least one detection signal. The processor 2 is constituted by, for example, an application specific integrated circuit (ASIC).

[0045] The magnetic sensor 1 and the processor 2 each have a rectangular parallelepiped-shaped chip. The magnetic sensor 1 has an upper surface 1a and a lower surface 1b that are located on opposite sides of each other, and four side surfaces that connect the upper surface 1a and the lower surface 1b. The processor 2 includes an upper surface 2a and a lower surface 2b that are located on opposite sides of each other, and four side surfaces that connect the upper surface 2a and the lower surface 2b. The magnetic sensor 1 is mounted on the upper surface 2a of the processor 2 in a posture in which the lower surface 1b of the magnetic sensor 1 opposes the upper surface 2a of the processor 2. The magnetic sensor 1 is joined to the processor 2, for example, with an adhesive.

[0046] Here, as shown in FIG. 1, an X direction, a Y direction, and a Z direction are defined. The X direction, the Y direction, and the Z direction are orthogonal to each other. In the exemplary embodiment, a direction perpendicular to the upper surface 1a of the magnetic sensor 1, that is, a direction from the lower surface 1b of the magnetic sensor 1 toward the upper surface 1a is set as the Z direction. In addition, a direction opposite to the X direction is set as the -X direction, a direction opposite to the Y direction is set as the -Y direction, and a direction opposite to the Z direction is set as the -Z direction. Figure 1 Figure 2 Hereinafter, a position in the front in the Z direction with respect to a reference position is referred to as "above", and a position on the side opposite to "above" with respect to the reference position is referred to as "below". In addition, with respect to the constituent elements of the magnetic sensor 1, a surface located at one end in the Z direction is referred to as an "upper surface", and a surface located at one end in the -Z direction is referred to as a "lower surface". In addition, expressions such as "when viewed from a particular direction (for example, the Z direction)" mean viewing an object from a position that is away from the particular direction or parallel to the particular direction.

[0047] In addition, as shown in FIG. 1, a U direction and a V direction are defined as follows. The U direction is a direction that is rotated from the Y direction toward the -Z direction. The V direction is a direction that is rotated from the Y direction toward the Z direction. In the exemplary embodiment, in particular, the U direction is set as a direction that is rotated from the Y direction toward the -Z direction by α, and the V direction is set as a direction that is rotated from the Y direction toward the Z direction by α. Note that α is an angle that is greater than 0° and less than 90°. In addition, a direction opposite to the U direction is set as the -U direction, and a direction opposite to the V direction is set as the -V direction. The U direction and the V direction are each orthogonal to the X direction.

[0048] In addition, as shown in FIG. 1, a U direction and a V direction are defined as follows. The U direction is a direction that is rotated from the Y direction toward the -Z direction. The V direction is a direction that is rotated from the Y direction toward the Z direction. In the exemplary embodiment, in particular, the U direction is set as a direction that is rotated from the Y direction toward the -Z direction by α, and the V direction is set as a direction that is rotated from the Y direction toward the Z direction by α. Note that α is an angle that is greater than 0° and less than 90°. In addition, a direction opposite to the U direction is set as the -U direction, and a direction opposite to the V direction is set as the -V direction. The U direction and the V direction are each orthogonal to the X direction. Figure 2 The magnetic sensor 1 has a plurality of first pads (electrode pads) provided on the upper surface 1a. The processor 2 has a plurality of second pads (electrode pads) provided on the upper surface 2a. In the magnetic sensor 1, corresponding two pads among the plurality of first pads and the plurality of second pads are connected to each other with a bonding wire.

[0049]

[0050] ​​The magnetic sensor 1 includes a first detection circuit 10 and a second detection circuit 20. The first and second detection circuits 10, 20 and the processor 2 are connected via a plurality of first pads, a plurality of second pads, and a plurality of bonding wires.

[0051] The first and second detection circuits 10, 20 each include a plurality of magnetic detection elements configured to detect a magnetic field of interest and generate at least one detection signal. In the exemplary embodiment, the plurality of magnetic detection elements are a plurality of magnetoresistance effect elements. Hereinafter, the magnetoresistance effect elements are referred to as MR elements.

[0052] Next, the circuit structures of the first and second detection circuits 10, 20 will be described with reference to Figure 4 and Figure 5 The circuit structures of the first and second detection circuits 10, 20 will be described. Figure 4 is a circuit diagram showing the circuit structure of the first detection circuit 10. Figure 5 is a circuit diagram showing the circuit structure of the second detection circuit 20.

[0053] The first detection circuit 10 is configured to detect a component of the magnetic field of interest in a direction parallel to the U direction and generate at least one first detection signal having a corresponding relationship with the component. The second detection circuit 20 is configured to detect a component of the magnetic field of interest in a direction parallel to the V direction and generate at least one second detection signal having a corresponding relationship with the component.

[0054] As shown in Figure 4 , the first detection circuit 10 includes four resistance portions R11, R12, R13, R14, a power supply terminal V1, a ground terminal G1, a first output terminal E11, and a second output terminal E12. The plurality of MR elements of the first detection circuit 10 constitute the resistance portions R11, R12, R13, R14.

[0055] The resistance portion R11 is provided between the power supply terminal V1 and the first output terminal E11. The resistance portion R12 is provided between the first output terminal E11 and the ground terminal G1. The resistance portion R13 is provided between the second output terminal E12 and the ground terminal G1. The resistance portion R14 is provided between the power supply terminal V1 and the second output terminal E12.

[0056] As shown in Figure 5 , the second detection circuit 20 includes four resistance portions R21, R22, R23, R24, a power supply terminal V2, a ground terminal G2, a first output terminal E21, and a second output terminal E22. The plurality of MR elements of the second detection circuit 20 constitute the resistance portions R21, R22, R23, R24.

[0057] The resistance portion R21 is provided between the power supply terminal V2 and the first output terminal E21. The resistance portion R22 is provided between the first output terminal E21 and the ground terminal G2. The resistance portion R23 is provided between the second output terminal E22 and the ground terminal G2. The resistance portion R24 is provided between the power supply terminal V2 and the second output terminal E22.

[0058] A voltage or a current of a certain magnitude is applied to each of the power supply terminals V1, V2. Each of the ground terminals G1, G2 is grounded.

[0059] Hereinafter, the plurality of MR elements of the first detection circuit 10 is referred to as a plurality of first MR elements 50A, and the plurality of MR elements of the second detection circuit 20 is referred to as a plurality of second MR elements 50B. Since the first and second detection circuits 10, 20 are constituent elements of the magnetic sensor 1, it can be said that the magnetic sensor 1 includes the plurality of first MR elements 50A and the plurality of second MR elements 50B. In addition, an arbitrary MR element is denoted by the reference numeral 50.

[0060] In the exemplary embodiment, in particular, the MR element 50 is a spin valve type MR element. The MR element 50 has a magnetization fixed layer whose direction of magnetization is fixed, a free layer whose direction of magnetization can change according to the direction of an object magnetic field, and a gap layer disposed between the magnetization fixed layer and the free layer. The MR element 50 can be a TMR (tunneling magnetoresistance) element, or a GMR (giant magnetoresistance) element. In the TMR element, the gap layer is a tunnel barrier layer. In the GMR element, the gap layer is a non-magnetic conductive layer. In the MR element 50, the resistance value changes according to an angle formed by the direction of magnetization of the free layer and the direction of magnetization of the magnetization fixed layer, and the resistance value becomes a minimum value when the angle is 0°, and the resistance value becomes a maximum value when the angle is 180°. In each MR element 50, the free layer has shape anisotropy in which an easy magnetization axis direction becomes a direction orthogonal to the direction of magnetization of the magnetization fixed layer.

[0061] In Figure 4 and Figure 5 , the plurality of solid arrows overlapping each resistance portion indicates the direction of magnetization of the magnetization fixed layer of the MR element 50. In addition, the plurality of hollow arrows overlapping each resistance portion indicates the direction of magnetization of the free layer of the MR element 50 when no object magnetic field is applied to the MR element 50.

[0062] In Figure 4In the illustrated example, the direction of magnetization of the magnetization fixed layer in each of the resistance portions R11, R13 is the U direction. The direction of magnetization of the magnetization fixed layer in each of the resistance portions R12, R14 is the -U direction. In addition, the free layer of each of the plurality of first MR elements 50A has shape anisotropy in which the direction of the easy magnetization axis becomes a direction parallel to the X direction. In the case where no object magnetic field is applied to the first MR element 50A, the direction of magnetization of the free layer in each of the resistance portions R11, R12 is the X direction. In the above case, the direction of magnetization of the free layer in each of the resistance portions R13, R14 is the -X direction.

[0063] In Figure 5 In the illustrated example, the direction of magnetization of the magnetization fixed layer in each of the resistance portions R21, R23 is the V direction. The direction of magnetization of the magnetization fixed layer in each of the resistance portions R22, R24 is the -V direction. In addition, the free layer of each of the plurality of second MR elements 50B has shape anisotropy in which the direction of the easy magnetization axis becomes a direction parallel to the X direction. In the case where no object magnetic field is applied to the second MR element 50B, the direction of magnetization of the free layer in each of the resistance portions R21, R22 is the X direction. In the above case, the direction of magnetization of the free layer in each of the resistance portions R23, R24 is the -X direction.

[0064] The magnetic sensor 1 further includes at least one magnetic field generating body that generates a bias magnetic field applied to at least one MR element 50. In the exemplary embodiment, in particular, as the at least one magnetic field generating body, the magnetic sensor 1 includes a plurality of first magnetic field generating bodies 70A and a plurality of second magnetic field generating bodies 70B. Further, any magnetic field generating body is denoted by the reference numeral 70.

[0065] In Figure 4 In the illustrated example, the direction of magnetization of the magnetization fixed layer in each of the resistance portions R21, R23 is the V direction. The direction of magnetization of the magnetization fixed layer in each of the resistance portions R22, R24 is the -V direction. In addition, the free layer of each of the plurality of second MR elements 50B has shape anisotropy in which the direction of the easy magnetization axis becomes a direction parallel to the X direction. In the case where no object magnetic field is applied to the second MR element 50B, the direction of magnetization of the free layer in each of the resistance portions R21, R22 is the X direction. In the above case, the direction of magnetization of the free layer in each of the resistance portions R23, R24 is the -X direction.

[0066] In Figure 5In the present embodiment, the arrows marked with symbols M21, M22, M23, and M24 indicate the directions of the bias magnetic fields applied to the plurality of second MR elements 50B by the plurality of second magnetic field generating bodies 70B. In the resistance portions R21 and R22, the bias magnetic fields in the X direction are applied to the plurality of second MR elements 50B by the plurality of second magnetic field generating bodies 70B. In the resistance portions R23 and R24, the bias magnetic fields in the -X direction are applied to the plurality of second MR elements 50B by the plurality of second magnetic field generating bodies 70B.

[0067] Further, from the viewpoint of the precision in manufacturing the MR elements 50 and the magnetic field generating bodies 70, the direction of the magnetization of the magnetization fixing layer, the direction of the easy magnetization axis of the free layer, and the direction of the bias magnetic field applied to the MR elements 50 by the plurality of magnetic field generating bodies 70 can slightly deviate from the above-described directions. In addition, the magnetization of the magnetization fixing layer can be configured to include a magnetic component having the above-described direction as a main component. In this case, the direction of the magnetization of the magnetization fixing layer becomes the above-described direction or approximately the above-described direction.

[0068] Next, the first and second detection signals will be described. First, the first detection signal will be described with reference to FIG. 6. Figure 4 The first detection signal will be described. When the intensity of the component of the object magnetic field in the direction parallel to the U direction changes, the resistance values of the resistance portions R11 to R14 of the first detection circuit 10 change such that the resistance values of the resistance portions R12 and R14 decrease as the resistance values of the resistance portions R11 and R13 increase, or the resistance values of the resistance portions R12 and R14 increase as the resistance values of the resistance portions R11 and R13 decrease. As a result, the potentials of the first and second output terminals E11 and E12 change. The first detection circuit 10 is configured to generate a signal corresponding to the potential of the first output terminal E11 as the first detection signal S11 and to generate a signal corresponding to the potential of the second output terminal E12 as the first detection signal S12.

[0069] Next, the second detection signal will be described with reference to FIG. 7. Figure 5 The second detection signal will be described. When the intensity of the component of the object magnetic field in the direction parallel to the V direction changes, the resistance values of the resistance portions R21 to R24 of the second detection circuit 20 change such that the resistance values of the resistance portions R22 and R24 decrease as the resistance values of the resistance portions R21 and R23 increase, or the resistance values of the resistance portions R22 and R24 increase as the resistance values of the resistance portions R21 and R23 decrease. As a result, the potentials of the first and second output terminals E21 and E22 change. The second detection circuit 20 is configured to generate a signal corresponding to the potential of the first output terminal E21 as the second detection signal S21 and to generate a signal corresponding to the potential of the second output terminal E22 as the second detection signal S22.

[0070] Next, the operation of the processor 2 will be described. The processor 2 is configured to generate a first detection value and a second detection value based on the first detection signals S11, S12 and the second detection signals S21, S22. The first detection value is a detection value corresponding to the component of the object magnetic field in the direction parallel to the Y direction. The second detection value is a detection value corresponding to the component of the object magnetic field in the direction parallel to the Z direction. Hereinafter, the first detection value will be denoted by the symbol Sy, and the second detection value will be denoted by the symbol Sz.

[0071] The processor 2 generates the first and second detection values Sy, Sz, for example, as follows. The processor 2 first generates a value S1 by an operation including obtaining the difference S11-S12 of the first detection signal S11 and the first detection signal S12, and generates a value S2 by an operation including obtaining the difference S21-S22 of the second detection signal S21 and the second detection signal S22. Next, the processor 2 calculates values S3, S4 using the following equations (1), (2).

[0072] S3 = (S2 + S1) / (2 cos α)... (1)

[0073] S4 = (S2 - S1) / (2 sin α)... (2)

[0074] The first detection value Sy can be the value S3 itself, or can be a value to which a correction such as gain adjustment and offset adjustment is applied to the value S3. Similarly, the second detection value Sz can be the value S4 itself, or can be a value to which a correction such as gain adjustment and offset adjustment is applied to the value S4.

[0075] Next, reference will be made to Figure 6 to 8 The detailed structure of the magnetic sensor 1 will be described in detail. Figure 6 is a plan view showing a portion of the magnetic sensor 1. Figure 7 shows a portion of the cross section at the position indicated by the line 7-7 in Figure 6 shows a portion of the cross section at the position indicated by the line 8-8 in Figure 8 shows a portion of the cross section at the position indicated by the line 7-7 in Figure 6 shows a portion of the cross section at the position indicated by the line 8-8 in

[0076] The magnetic sensor 1 has a substrate 31 having an upper surface 31a, insulating layers 32, 33, 34, 35, 36, 37, a plurality of lower electrodes 41A, a plurality of lower electrodes 41B, a plurality of upper electrodes 42A, and a plurality of upper electrodes 42B. The upper surface 31a of the substrate 31 is parallel to the XY plane. The Z direction is also a direction perpendicular to the upper surface 31a of the substrate 31. In the exemplary embodiment, the upper surface 31a of the substrate 31 can be used as a reference plane for the arrangement and shape of the constituent elements of the magnetic sensor 1, i.e., a reference plane.

[0077] The insulating layers 32, 33 are sequentially stacked on the substrate 31. The plurality of lower electrodes 41A and the plurality of lower electrodes 41B are disposed on the insulating layer 33. The insulating layer 34 is disposed on the insulating layer 33 around the plurality of lower electrodes 41A and around the plurality of lower electrodes 41B. The plurality of first MR elements 50A is disposed on the plurality of lower electrodes 41A. The plurality of second MR elements 50B is disposed on the plurality of lower electrodes 41B. The insulating layer 35 is disposed on the plurality of lower electrodes 41A, the plurality of lower electrodes 41B, and the insulating layer 34 around the plurality of first MR elements 50A and around the plurality of second MR elements 50B. The plurality of upper electrodes 42A is disposed on the plurality of first MR elements 50A and the insulating layer 35. The plurality of upper electrodes 42B is disposed on the plurality of second MR elements 50B and the insulating layer 35. The insulating layer 36 is disposed on the insulating layer 35 around the plurality of upper electrodes 42A and around the plurality of upper electrodes 42B. The insulating layer 37 is disposed on the plurality of upper electrodes 42A, the plurality of upper electrodes 42B, and the insulating layer 36.

[0078] The plurality of first magnetic field generating bodies 70A and the plurality of second magnetic field generating bodies 70B are embedded in the insulating layer 35. The plurality of first magnetic field generating bodies 70A is disposed apart from the first MR elements 50A and the lower electrodes 41A, respectively. The plurality of second magnetic field generating bodies 70B is disposed apart from the second MR elements 50B and the lower electrodes 41B, respectively. The magnetic sensor 1 can further include an insulating film interposed between each of the plurality of first magnetic field generating bodies 70A and each of the plurality of first MR elements 50A, between each of the plurality of second magnetic field generating bodies 70B and each of the plurality of second MR elements 50B, between each of the plurality of first magnetic field generating bodies 70A and each of the plurality of lower electrodes 41A, and between each of the plurality of second magnetic field generating bodies 70B and each of the plurality of lower electrodes 41B.

[0079] Upper surfaces of some of the plurality of first magnetic field generating bodies 70A can be in contact with lower surfaces of the plurality of upper electrodes 42A. Upper surfaces of some of the plurality of second magnetic field generating bodies 70B can be in contact with lower surfaces of the plurality of upper electrodes 42B. Alternatively, the magnetic sensor 1 can further include another insulating film interposed between each of the plurality of first magnetic field generating bodies 70A and the plurality of upper electrodes 42A, and between each of the plurality of second magnetic field generating bodies 70B and the plurality of upper electrodes 42B.

[0080] The magnetic sensor 1 can include a support member that supports the plurality of first MR elements 50A and the plurality of second MR elements 50B. In the example embodiment, in particular, the support member is constituted by the insulating layer 33. The insulating layer 33 is substantially disposed on the upper surface 31a of the substrate 31. Further, in the example embodiment, the plurality of lower electrodes 41A and the plurality of lower electrodes 41B are disposed on the insulating layer 33. Figure 6In the middle, the insulating layer 33, the plurality of first MR elements 50A, the plurality of second MR elements 50B, the plurality of first magnetic field generating bodies 70A, and the plurality of second magnetic field generating bodies 70B among the constituent elements of the magnetic sensor 1 are shown.

[0081] The insulating layer 33 can have a plurality of opposing surfaces 33c that respectively extend in a direction (Z direction) away from the upper surface 31a of the substrate 31. The plurality of opposing surfaces 33c respectively extend in a direction parallel to the X direction. The overall shape of the opposing surface 33c is a semicylindrical curved surface configured by moving the curved shape (arched shape) of the opposing surface 33c along the direction parallel to the X direction as shown in Figure 7 Figure 8 the semicylindrical curved surface configured by moving the curved shape (arched shape) of the opposing surface 33c along the direction parallel to the X direction as shown in

[0082] The plurality of opposing surfaces 33c respectively have an upper end portion that is an end portion of the opposing surface 33c at a position farthest from the upper surface 31a of the substrate 31. In the exemplary embodiment, the upper end portion of each of the plurality of opposing surfaces 33c extends in the direction parallel to the X direction. Here, attention is focused on an arbitrary one of the plurality of opposing surfaces 33c. The opposing surface 33c includes a first inclined surface 33a and a second inclined surface 33b. The first inclined surface 33a is a surface of the opposing surface 33c on the Y direction side from the upper end portion of the opposing surface 33c. The second inclined surface 33b is a surface of the opposing surface 33c on the -Y direction side from the upper end portion of the opposing surface 33c. In the exemplary embodiment, the first inclined surface 33a and the second inclined surface 33b are continuous with each other. Figure 6 In the middle, the boundary between the first inclined surface 33a and the second inclined surface 33b is indicated by a broken line.

[0083] The upper end portion of the opposing surface 33c can be the boundary between the first inclined surface 33a and the second inclined surface 33b. In this case, the broken line shown in Figure 6 indicates the upper end portion of the opposing surface 33c.

[0084] The upper surface 31a of the substrate 31 is parallel to the XY plane. The first inclined surface 33a and the second inclined surface 33b are respectively inclined with respect to the upper surface 31a of the substrate 31, that is, the XY plane. In a cross section perpendicular to the upper surface 31a of the substrate 31, the interval between the first inclined surface 33a and the second inclined surface 33b decreases as it moves away from the upper surface 31a of the substrate 31.

[0085] In the exemplary embodiment, because the plurality of opposing surfaces 33c are present, the plurality of first inclined surfaces 33a and the plurality of second inclined surfaces 33b are also respectively present. The insulating layer 33 has the plurality of first inclined surfaces 33a and the plurality of second inclined surfaces 33b.

[0086] ​The insulating layer 33 also has flat surfaces 33d present around the plurality of opposing surfaces 33c. The flat surfaces 33d are surfaces parallel to the upper surface 31a of the substrate 31. The plurality of opposing surfaces 33c respectively protrude from the flat surfaces 33d in the Z direction. In addition, in the example embodiment, the plurality of opposing surfaces 33c are arranged at intervals. Thus, there are flat surfaces 33d between two opposing surfaces 33c adjacent in the Y direction.

[0087] The insulating layer 33 can have a groove portion recessed toward the -Z direction from the flat surfaces 33d. In this case, the plurality of opposing surfaces 33c can be present within the groove portion.

[0088] The plurality of lower electrodes 41A are arranged on the plurality of first inclined surfaces 33a. The plurality of lower electrodes 41B are arranged on the plurality of second inclined surfaces 33b. As described above, the first inclined surfaces 33a and the second inclined surfaces 33b are respectively inclined with respect to the reference plane, that is, the upper surface 31a of the substrate 31, and thus the upper surfaces of the plurality of lower electrodes 41A and the upper surfaces of the plurality of lower electrodes 41B are also inclined with respect to the upper surface 31a of the substrate 31. Thus, it can be said that the plurality of first MR elements 50A and the plurality of second MR elements 50B are arranged on inclined surfaces inclined with respect to the upper surface 31a of the substrate 31. The insulating layer 33 is a component for supporting the plurality of first MR elements 50A and the plurality of second MR elements 50B respectively inclined with respect to the upper surface 31a of the substrate 31.

[0089] The plurality of first magnetic field generating bodies 70A are substantially arranged on the plurality of first inclined surfaces 33a. The plurality of first magnetic field generating bodies 70A respectively have lower surfaces having shapes along the first inclined surfaces 33a.

[0090] The plurality of second magnetic field generating bodies 70B are substantially arranged on the plurality of second inclined surfaces 33b. The plurality of second magnetic field generating bodies 70B respectively have lower surfaces having shapes along the second inclined surfaces 33b.

[0091] The opposing surfaces 33c of the insulating layer 33 are opposed to the first MR elements 50A, the second MR elements 50B, the first magnetic field generating bodies 70A, and the second magnetic field generating bodies 70B. The first and second inclined surfaces 33a and 33b are also curved surface portions of the opposing surfaces 33c, respectively.

[0092] Here, attention is directed to an arbitrary one of the plurality of first magnetic field generating bodies 70A and an arbitrary one of the plurality of second magnetic field generating bodies 70B. As described above, the first inclined surfaces 33a and the second inclined surfaces 33b are respectively inclined with respect to the upper surface 31a of the substrate 31, and thus the lower surfaces of the plurality of first magnetic field generating bodies 70A and the lower surfaces of the plurality of second magnetic field generating bodies 70B are also inclined with respect to the upper surface 31a of the substrate 31. Thus, it can be said that the plurality of first magnetic field generating bodies 70A and the plurality of second magnetic field generating bodies 70B are arranged on inclined surfaces inclined with respect to the upper surface 31a of the substrate 31. Figure 6As shown, multiple first magnetic field generators 70A are arranged in multiples in both the X and Y directions. Multiple first MR elements 50A are respectively disposed between two adjacent first magnetic field generators 70A in a direction parallel to the X direction. On a first inclined surface 33a, multiple first MR elements 50A and multiple first magnetic field generators 70A are arranged in a row along a direction parallel to the X direction.

[0093] Similarly, multiple second magnetic field generators 70B are arranged in multiples in both the X and Y directions. Multiple second MR elements 50B are respectively disposed between two adjacent second magnetic field generators 70B in a direction parallel to the X direction. On a second inclined surface 33b, multiple second MR elements 50B and multiple second magnetic field generators 70B are arranged in a row along a direction parallel to the X direction.

[0094] A column consisting of multiple first MR elements 50A and multiple first magnetic field generators 70A, and a column consisting of multiple second MR elements 50B and multiple second magnetic field generators 70B, are alternately arranged in a direction parallel to the Y direction. The multiple first MR elements 50A and multiple second MR elements 50B can be configured such that the first MR elements 50A and the second MR elements 50B are alternately arranged in a direction parallel to the Y direction. Similarly, the multiple first magnetic field generators 70A and multiple second magnetic field generators 70B can be configured such that the first magnetic field generators 70A and the second magnetic field generators 70B are alternately arranged in a direction parallel to the Y direction.

[0095] Multiple first MR elements 50A are connected in series using multiple lower electrodes 41A and multiple upper electrodes 42A. Multiple second MR elements 50B are connected in series using multiple lower electrodes 41B and multiple upper electrodes 42B. Referring here... Figure 9 The connection methods of multiple first MR elements 50A and multiple second MR elements 50B are described in detail.

[0096] like Figure 9 As shown, each lower electrode 41A has an elongated shape. A gap is formed between two adjacent lower electrodes 41A in the long side direction. On the upper surface of the lower electrode 41A, a first MR element 50A is disposed near both ends in the long side direction. In addition, each upper electrode 42A has an elongated shape, disposed on two adjacent lower electrodes 41A in the long side direction of the lower electrode 41A, and electrically connects two adjacent first MR elements 50A to each other.

[0097] A first magnetic field generator 70A is disposed between two adjacent first MR elements 50A along the long side of the lower electrode 41A. Figure 9The example in which two first magnetic field generating bodies 70A are arranged between the two first MR elements 50A is shown in FIG. 2. However, one first magnetic field generating body 70A can be arranged between the two first MR elements 50A. Further, the two first magnetic field generating bodies 70A between the two first MR elements 50A can not overlap the two lower electrodes 41A when viewed in the Z direction. Alternatively, the first magnetic field generating bodies 70A can not overlap the two lower electrodes 41A when viewed in the Z direction. Further, the first magnetic field generating bodies 70A can be in contact with the upper electrodes 42A or can not be in contact with the upper electrodes 42A. Figure 9 The example in which the two first magnetic field generating bodies 70A between the two first MR elements 50A overlap the two lower electrodes 41A when viewed in the Z direction is shown in FIG. 2. However, the two first magnetic field generating bodies 70A between the two first MR elements 50A can overlap only one of the two lower electrodes 41A when viewed in the Z direction. Alternatively, the first magnetic field generating bodies 70A can not overlap the two lower electrodes 41A when viewed in the Z direction. Further, the first magnetic field generating bodies 70A can be in contact with the upper electrodes 42A or can not be in contact with the upper electrodes 42A.

[0098] Although not shown, one of the first MR elements 50A at one end of the column of the plurality of first MR elements 50A arranged in a column is connected to another one of the first MR elements 50A at one end of another column of the plurality of first MR elements 50A adjacent in a direction crossing the longitudinal direction of the lower electrodes 41A. The two first MR elements 50A are connected to each other by an electrode not shown. The electrode not shown can be an electrode connecting the lower surfaces of the two first MR elements 50A to each other or the upper surfaces of the two first MR elements 50A to each other.

[0099] The above description of the first MR elements 50A, the first magnetic field generating bodies 70A, the lower electrodes 41A, and the upper electrodes 42A applies to the second MR elements 50B, the second magnetic field generating bodies 70B, the lower electrodes 41B, and the upper electrodes 42B. If the first MR elements 50A, the first magnetic field generating bodies 70A, the lower electrodes 41A, and the upper electrodes 42A in the above description are replaced by the second MR elements 50B, the second magnetic field generating bodies 70B, the lower electrodes 41B, and the upper electrodes 42B, respectively, the description becomes a description of the second MR elements 50B, the second magnetic field generating bodies 70B, the lower electrodes 41B, and the upper electrodes 42B.

[0100] Next, the structure of the MR element 50 will be described in more detail with reference to FIG. 3. Figure 10 The structure of the MR element 50 will be described in more detail with reference to FIG. 3. Figure 10In the diagram, symbol 52 represents the magnetized fixed layer, symbol 53 represents the gap layer, and symbol 54 represents the free layer. The MR element 50 also has an antiferromagnetic layer 51. The antiferromagnetic layer 51, magnetized fixed layer 52, gap layer 53, and free layer 54 are stacked sequentially from the lower electrode 41 towards the upper electrode 42. The antiferromagnetic layer 51 is made of an antiferromagnetic material and generates exchange coupling with the magnetized fixed layer 52, fixing the magnetization direction of the magnetized fixed layer 52. Furthermore, the magnetized fixed layer 52 can be a so-called self-pinned fixed layer (SFP layer). A self-pinned fixed layer has a stacked ferristructure consisting of a ferromagnetic layer, a non-magnetic intermediate layer, and a ferromagnetic layer, where two ferromagnetic layers are antiferromagnetically coupled. When the magnetized fixed layer 52 is a self-pinned fixed layer, the antiferromagnetic layer 51 can be omitted.

[0101] Furthermore, the arrangement of layers 51-54 in MR element 50 can be consistent with... Figure 10 The configuration shown is reversed from top to bottom.

[0102] In the first MR element 50A, the antiferromagnetic layer 51, the magnetization fixing layer 52, the gap layer 53, and the free layer 54 are arranged along the first inclined surface 33a (refer to the first inclined surface 33a). Figure 6 and Figure 7 In the second MR element 50B, the antiferromagnetic layer 51, the magnetization fixing layer 52, the gap layer 53, and the free layer 54 are stacked in a direction perpendicular to the second inclined surface 33b.

[0103] Next, refer to Figure 11 The structure of the magnetic field generator 70 is explained. Figure 11 This is a side view of the magnetic field generator 70. The magnetic field generator 70 includes a ferromagnetic part 73 and an antiferromagnetic part 72 that is connected to and exchange-coupled with the ferromagnetic part 73.

[0104] The ferromagnetic section 73 has magnetization as a whole. Magnetization as a whole is the result of volume averaging the vector sum of the magnetic moments of each unit of atoms, lattice, etc., in the ferromagnetic section 73. Hereinafter, the magnetization as a whole of the ferromagnetic section 73 will be simply referred to as the magnetization of the ferromagnetic section 73.

[0105] In the magnetic field generator 70, an antiferromagnetic section 72 and a ferromagnetic section 73 are exchange-coupled, defining the magnetization direction of the ferromagnetic section 73. The ferromagnetic section 73 and the antiferromagnetic section 72 generate a bias magnetic field applied to the MR element 50 based on the magnetization of the ferromagnetic section 73. The magnetic field generator 70 configured in this way exhibits high resistance to interfering magnetic fields.

[0106] The ferromagnetic portion 73 is formed of a ferromagnetic material containing one or more of Co, Fe, and Ni. As examples of such a ferromagnetic material, CoFe, CoFeB, and CoNiFe can be given. The antiferromagnetic portion 72 is formed of an antiferromagnetic material such as IrMn and PtMn.

[0107] The magnetic field generating body 70 further includes a buffer layer 71 and a cap layer 74. The buffer layer 71, the antiferromagnetic portion 72, the ferromagnetic portion 73, and the cap layer 74 are sequentially stacked. The buffer layer 71 and the cap layer 74 are each formed of a nonmagnetic metal material such as Ru, Ta, Cu, and Cr.

[0108] Here, reference will be made to Figure 8 and Figure 11 The stacking direction and the lower surface of the antiferromagnetic portion 72 and the ferromagnetic portion 73 in the first and second magnetic field generating bodies 70A, 70B will be described. In the first magnetic field generating body 70A, the antiferromagnetic portion 72 and the ferromagnetic portion 73 are stacked in a direction perpendicular to the first inclined surface 33a. In addition, the antiferromagnetic portion 72 and the ferromagnetic portion 73 each have a lower surface that is opposite to the first inclined surface 33a and is inclined with respect to the upper surface 31a of the substrate 31, which is the reference plane. Such a lower surface can be realized by forming the buffer layer 71 and the antiferromagnetic portion 72 each with a film thickness that exhibits the shape of the first inclined surface 33a.

[0109] In the second magnetic field generating body 70B, the antiferromagnetic portion 72 and the ferromagnetic portion 73 are stacked in a direction perpendicular to the second inclined surface 33b. In addition, the antiferromagnetic portion 72 and the ferromagnetic portion 73 each have a lower surface that is opposite to the second inclined surface 33b and is inclined with respect to the upper surface 31a of the substrate 31, which is the reference plane. Such a lower surface can be realized by forming the buffer layer 71 and the antiferromagnetic portion 72 each with a film thickness that exhibits the shape of the second inclined surface 33b.

[0110] Next, reference will be made to Figures 6 to 9 , Figure 12 and Figure 13 Features related to the shapes and configurations of the MR element 50 and the magnetic field generating body 70 will be described. Figure 12 and Figure 13 are cross-sectional views that represent a portion of the magnetic sensor 1. Figure 12 represents a cross section that is parallel to the XZ plane and is perpendicular to the upper surface 31a of the substrate 31, i.e., a cross section that intersects the second MR element 50B and the second magnetic field generating body 70B. Figure 13 represents a cross section that is parallel to the YZ plane and is perpendicular to the upper surface 31a of the substrate 31, i.e., a cross section that intersects the second magnetic field generating body 70B.

[0111] Hereinafter, reference will be made to Figure 12 and Figure 13In the case of explanation, features common to the first MR element 50A and the second MR element 50B are explained as features of the MR element 50, and features common to the first magnetic field generating body 70A and the second magnetic field generating body 70B are explained as features of the magnetic field generating body 70.

[0112] The magnetic field generating body 70 is disposed apart from the MR element 50 with an interval. An insulating layer 35 is interposed between the MR element 50 and the magnetic field generating body 70.

[0113] The size of the magnetic field generating body 70 in the direction parallel to the Y direction is larger than the size of the MR element 50 in the direction parallel to the Y direction. At least a portion of the MR element 50 overlaps the magnetic field generating body 70 when viewed from the X direction. In the exemplary embodiment, in particular, at least a portion of the free layer 54 of the MR element 50 can overlap the ferromagnetic portion 73 of the magnetic field generating body 70 when viewed from the X direction.

[0114] Here, as shown in FIG. 1, a first direction D1 parallel to the YZ plane is defined. The first direction D1 is a direction along the first inclined surface 33a or the second inclined surface 33b and is a direction away from the upper surface 31a of the substrate 31. As shown in FIG. 1, in a case where the first direction D1 is defined as a direction along the second inclined surface 33b, the first direction D1 is a direction between the Y direction and the Z direction. Although not shown, in a case where the first direction D1 is defined as a direction along the first inclined surface 33a, the first direction D1 is a direction between the -Y direction and the Z direction. Figure 13 Figure 13

[0115] In addition, in the following explanation, a direction along the inclined surface, which is a direction along the first inclined surface 33a or the second inclined surface 33b and is parallel to the first direction D1, will be simply referred to as a direction along the inclined surface. The direction is also a direction along the inclined surface and is a direction in which the distance from the upper surface 31a of the substrate 31 changes. The size of the magnetic field generating body 70 in the direction along the inclined surface is larger than the size of the MR element 50 in the direction along the inclined surface.

[0116] The MR element 50 has a lower surface 50a opposite to the first inclined surface 33a or the second inclined surface 33b, an upper surface 50b on the opposite side to the lower surface 50a, and four side surfaces 50c, 50d, 50e, 50f connecting the lower surface 50a and the upper surface 50b. Further, the side surfaces 50c, 50d are shown in FIG. 2. In the exemplary embodiment, in particular, the side surfaces 50c to 50f are all located above the first inclined surface 33a or the second inclined surface 33b. Figure 15

[0117] ​​​Side 50c is located at one end of the MR element 50 in the first direction D1. Side 50d is located at one end of the MR element 50 in the direction opposite to the first direction D1. In the first MR element 50A, side 50c is located at one end of the first MR element 50A in the -Y direction, and side 50d is located at one end of the first MR element 50A in the Y direction. In the second MR element 50B, side 50c is located at one end of the second MR element 50B in the Y direction, and side 50d is located at one end of the second MR element 50B in the -Y direction.

[0118] Side 50e is located at one end of MR element 50 in the X direction. Side 50f is located at one end of MR element 50 in the -X direction.

[0119] like Figure 12 As shown, the sides 50e and 50f of the MR element 50 are inclined relative to the upper surface 31a of the substrate 31. In an MR element 50, the distance between the sides 50e and 50f in the direction parallel to the X direction decreases as it moves away from the upper surface 31a of the substrate 31. Although not shown, the sides 50c and 50d of the MR element 50 are also inclined relative to the upper surface 31a of the substrate 31. In an MR element 50, the distance between the sides 50c and 50d along the direction of the inclined surface can decrease as it moves away from the first inclined surface 33a or the second inclined surface 33b located below the MR element 50.

[0120] The magnetic field generator 70 has a lower surface 70a opposite to the first inclined surface 33a or the second inclined surface 33b, an upper surface 70b opposite to the lower surface 70a, and four side surfaces 70c, 70d, 70e, and 70f connecting the lower surface 70a and the upper surface 70b. In an exemplary embodiment, in particular, side surfaces 70c to 70f are all located above the first inclined surface 33a or the second inclined surface 33b.

[0121] Side 70c is located at one end of the magnetic field generator 70 in the first direction D1. Side 70d is located at one end of the magnetic field generator 70 in the opposite direction to the first direction D1. In the first magnetic field generator 70A, side 70c is located at one end of the first magnetic field generator 70A in the -Y direction, and side 70d is located at one end of the first magnetic field generator 70A in the Y direction. In the second magnetic field generator 70B, side 70c is located at one end of the second magnetic field generator 70B in the Y direction, and side 70d is located at one end of the second magnetic field generator 70B in the -Y direction.

[0122] Side 70e is located at one end of the magnetic field generator 70 in the X direction. Side 70f is located at one end of the magnetic field generator 70 in the -X direction.

[0123] like Figure 12As shown, the side surfaces 70e and 70f of the magnetic field generator 70 are inclined relative to the upper surface 31a of the substrate 31. In a magnetic field generator 70, the distance between the side surfaces 70e and 70f in the direction parallel to the X direction increases as they move away from the upper surface 31a of the substrate 31. Figure 13 As shown, the side surfaces 70c and 70d of the magnetic field generator 70 are inclined relative to the upper surface 31a of the substrate 31. In a magnetic field generator 70, the distance between the side surfaces 70c and 70d along the direction of the inclined surface increases as it moves away from the first inclined surface 33a or the second inclined surface 33b located below the magnetic field generator 70.

[0124] Next, refer to Figure 13 and Figure 14 The shape of the magnetic field generator 70 is described in more detail. Figure 14 This is an explanatory diagram illustrating the shape of a magnetic field generator 70. The magnetic field generator 70 has a first end point Ed1 and a second end point Ed2 located at both ends in a direction parallel to the Y direction. The first end point Ed1 is located at the intersection of the upper surface 70b and the side surface 70c of the magnetic field generator 70. The second end point Ed2 is located at the intersection of the upper surface 70b and the side surface 70d of the magnetic field generator 70. The upper surface 70b connects the first end point Ed1 and the second end point Ed2.

[0125] At least one of the first end Ed1 and the second end Ed2 is located on the first inclined surface 33a or the second inclined surface 33b. In an exemplary embodiment, the first end Ed1 is located on the first inclined surface 33a or the second inclined surface 33b. The second end Ed2 may be located on the first inclined surface 33a or the second inclined surface 33b, or it may be located on the flat surface 33d. In an exemplary embodiment, the second end Ed2 is located on the first inclined surface 33a or the second inclined surface 33b.

[0126] The first end Ed1 is located further away from the reference plane, i.e., the upper surface 31a of the substrate 31, than the second end Ed2. That is, the distance from the upper surface 31a of the substrate 31 to the first end Ed1 is greater than the distance from the upper surface 31a of the substrate 31 to the second end Ed2.

[0127] Here, in the magnetic field generator 70, the portion comprising the first end Ed1, a portion of the lower surface 70a, a portion of the upper surface 70b, and the side surface 70c is referred to as the first portion 701; the portion comprising the second end Ed2, another portion of the lower surface 70a, another portion of the upper surface 70b, and the side surface 70d is referred to as the second portion 702; and the portion located between the first portion 701 and the second portion 702 is referred to as the third portion 703. Figure 14In the drawing, the boundaries of the first portion 701 and the third portion 703, and the boundaries of the second portion 702 and the third portion 703 are respectively indicated by broken lines.

[0128] The magnetic field generating body 70 has a dimension in a direction perpendicular to the upper surface 70b, i.e., a film thickness T. In the drawing, the film thickness T in the first portion 701 is indicated by a symbol T1, the film thickness T in the second portion 702 is indicated by a symbol T2, and the film thickness T in the third portion 703 is indicated by a symbol T3. Figure 14 In the drawing, the film thickness T in the first portion 701 is indicated by a symbol T1, the film thickness T in the second portion 702 is indicated by a symbol T2, and the film thickness T in the third portion 703 is indicated by a symbol T3. The film thicknesses T1, T2 can be the maximum film thicknesses T in the first portion 701 and the second portion 702, respectively, or can be the average film thicknesses T in the first portion 701 and the second portion 702, respectively. The film thickness T3 can be the maximum film thickness T in the third portion 703, or can be the average film thickness T in the third portion 703. Further, the film thickness T3 can be the film thickness T at an arbitrary position P on the upper surface 70b belonging to the third portion 703. The arbitrary position P is a position closer to the reference plane, i.e., the upper surface 31a of the substrate 31, than the first end portion Ed1, and is a position farther from the reference plane, i.e., the upper surface 31a of the substrate 31, than the second end portion Ed2. In the following description, the film thicknesses T1, T2 are the maximum film thicknesses T in the first portion 701 and the second portion 702, respectively, and the film thickness T3 is the film thickness T at the arbitrary position P.

[0129] In the YZ cross section intersecting the magnetic field generating body 70, the film thickness T1 is greater than the film thickness T2. Further, in the YZ cross section, the film thickness T3 can be smaller than the film thickness T1, or can be greater than the film thickness T2. Further, the film thickness T3 can decrease as it approaches the second portion 702 from the first portion 701.

[0130] In the exemplary embodiment, the upper surface 70b is inclined with respect to the upper surface 31a of the substrate 31. Here, an angle formed by the upper surface 70b and the upper surface 31a of the substrate 31 is indicated by a symbol θ. The angle θ is 0° or more and 90° or less. Further, the angle θ at the first end portion Ed1 is indicated by a symbol θ1, the angle θ at the second end portion Ed2 is indicated by a symbol θ2, and the angle θ at the arbitrary position P on the upper surface 70b other than the first end portion Ed1 and the second end portion Ed2 is indicated by a symbol θp.

[0131] In the YZ cross section intersecting the magnetic field generating body 70, the angle θ1 is smaller than the angle θ2. The angle θ1 can be in the range of 0° to 40°, for example, as long as the requirement that the angle θ1 is smaller than the angle θ2 is satisfied. The angle θ2 can be in the range of 20° to 60°, for example, as long as the requirement that the angle θ1 is smaller than the angle θ2 is satisfied.

[0132] Further, in the YZ cross section, the angle θp is greater than the angle θ1 and is smaller than the angle θ2. Further, the angle θp can increase as it approaches the second end portion Ed2 from the first end portion Ed1.

[0133] In addition, in the example embodiment, the angle of the opposing surface 33c with respect to the upper surface 31a of the substrate 31 at any position on the opposing surface 33c varies depending on the distance from the upper surface 31a of the substrate 31 to the position. Here, the angle of the opposing surface 33c with respect to the upper surface 31a of the substrate 31 is referred to as an inclination angle and is denoted by the symbol φ. The inclination angle φ is 0° or more and 90° or less. In addition, the inclination angle φ at the position on the opposing surface 33c closest to the first end portion Edl is denoted by the symbol φl, the inclination angle φ at the position on the opposing surface 33c closest to the second end portion Ed2 is denoted by the symbol φ2, and the inclination angle φ at the position on the opposing surface 33c closest to the arbitrary position P on the surface 70b other than the first end portion Edl and the second end portion Ed2 is denoted by the symbol φp.

[0134] In the YZ cross section intersecting the magnetic field generating body 70, the inclination angle φl is smaller than the inclination angle φ2. As long as the requirement that the inclination angle φl is smaller than the inclination angle φ2 is satisfied, the inclination angle φl may, for example, be in the range of 0° to 40°. As long as the requirement that the inclination angle φl is smaller than the inclination angle φ2 is satisfied, the inclination angle φ2 may, for example, be in the range of 20° to 60°.

[0135] In addition, in the YZ cross section, the inclination angle φp is larger than the inclination angle φl and smaller than the inclination angle φ2. In addition, the inclination angle φp can become larger as the first end portion Edl is approached toward the second end portion Ed2.

[0136] Next, the positional relationship between the magnetic field generating body 70 and the MR element 50 will be described with reference to Figure 9 and Figure 15 The positional relationship between the magnetic field generating body 70 and the MR element 50 will be described. Figure 15 is a view for explaining the positional relationship between the magnetic field generating body 70 and the MR element 50. In Figure 15 , the positional relationship between the magnetic field generating body 70 and the MR element 50 when viewed from the X direction is schematically represented. Further, in Figure 15 , for convenience, the size of the magnetic field generating body 70 is exaggerated as compared with the MR element 50.

[0137] At least a portion of the first MR element 50A is configured to overlap the first magnetic field generating body 70A when viewed from the X direction. At least a portion of the second MR element 50B is configured to overlap the second magnetic field generating body 70B when viewed from the X direction.

[0138] The MR element 50 has a third end portion Ed3 and a fourth end portion Ed4 at both ends in a direction parallel to the Y direction of the MR element 50. The third end portion Ed3 is present at a position where the upper surface 50b of the MR element 50 intersects the side surface 50c. The fourth end portion Ed4 is present at a position where the upper surface 50b of the MR element 50 intersects the side surface 50d. The upper surface 50b connects the third end portion Ed3 and the fourth end portion Ed4. The third end portion Ed3 and the fourth end portion Ed4 are located above the first inclined surface 33a or the second inclined surface 33b.

[0139] The third end portion Ed3 is located farther from the reference plane, i.e., the upper surface 31a of the substrate 31, than the fourth end portion Ed4. That is, the distance from the upper surface 31a of the substrate 31 to the third end portion Ed3 is greater than the distance from the upper surface 31a of the substrate 31 to the fourth end portion Ed4.

[0140] The MR element 50 is configured such that the first end portion Edl of the magnetic field generating body 70 in the direction parallel to the Y direction and the third end portion Ed3 of the MR element 50 are spaced apart by a smaller distance than the second end portion Ed2 of the magnetic field generating body 70 in the direction parallel to the Y direction and the fourth end portion Ed4 of the MR element 50. In the exemplary embodiment, in particular, the first MR element 50A is configured such that the first end portion Edl of the first magnetic field generating body 70A in the direction parallel to the Y direction and the third end portion Ed3 of the first MR element 50A are spaced apart by a smaller distance than the second end portion Ed2 of the first magnetic field generating body 70A in the direction parallel to the Y direction and the fourth end portion Ed4 of the first MR element 50A. In addition, the second MR element 50B is configured such that the first end portion Edl of the second magnetic field generating body 70B in the direction parallel to the Y direction and the third end portion Ed3 of the second MR element 50B are spaced apart by a smaller distance than the second end portion Ed2 of the second magnetic field generating body 70B in the direction parallel to the Y direction and the fourth end portion Ed4 of the second MR element 50B.

[0141] Here, attention is focused on the first MR element 50A, the second MR element 50B, the first magnetic field generating body 70A, and the second magnetic field generating body 70B, which are disposed above one of the opposing surfaces 33c. In the exemplary embodiment, the first MR element 50A and the second MR element 50B are disposed above the same opposing surface 33c. In addition, the first magnetic field generating body 70A and the second magnetic field generating body 70B are disposed above the same opposing surface 33c. Figure 15 In the exemplary embodiment, the symbol Cl denotes the center in the direction parallel to the Y direction of the first magnetic field generating body 70A, the symbol C2 denotes the center in the direction parallel to the Y direction of the second magnetic field generating body 70B, the symbol C3 denotes the center in the direction parallel to the Y direction of the first MR element 50A, and the symbol C4 denotes the center in the direction parallel to the Y direction of the second MR element 50B. In addition, the centers Cl and C2 can also be the centers in the stacking direction of the plurality of layers that constitute the magnetic field generating body 70. Likewise, the centers C3 and C4 can also be the centers in the stacking direction of the plurality of layers that constitute the MR element 50.

[0142] As described above, the first MR element 50A and the second MR element 50B are disposed above the same opposing surface 33c. In addition, the first magnetic field generating body 70A and the second magnetic field generating body 70B are disposed above the same opposing surface 33c.Figure 15 As shown, the interval between the center C1 and the center C2 can be different from the interval between the center C3 and the center C4. In the example shown, the interval between the center C1 and the center C2 is greater than the interval between the center C3 and the center C4. Figure 15 As shown, the interval between the center C1 and the center C2 can be different from the interval between the center C3 and the center C4. In the example shown, the interval between the center C1 and the center C2 is greater than the interval between the center C3 and the center C4.

[0143] Further, when the first MR element 50A, the second MR element 50B, the first magnetic field generating body 70A, and the second magnetic field generating body 70B disposed above the two opposing surfaces 33c are focused on, the size relationship of the above-described intervals is reversed. That is, when the first MR element 50A and the first magnetic field generating body 70A disposed above the opposing surface 33c on the -Y direction side and the second MR element 50B and the second magnetic field generating body 70B disposed above the opposing surface 33c on the Y direction side are focused on, the interval between the center C1 and the center C2 is smaller than the interval between the center C3 and the center C4.

[0144] Next, a manufacturing method of the magnetic sensor 1 in the exemplary embodiment will be briefly described. The process of manufacturing the magnetic sensor 1 includes a process of forming the insulating layer 33 as a support member, a process of forming the plurality of MR elements 50, and a process of forming the plurality of magnetic field generating bodies 70. The plurality of MR elements 50 and the plurality of magnetic field generating bodies 70 are formed above the insulating layer 33.

[0145] First, the process of forming the plurality of MR elements 50 will be described. In the process of forming the plurality of MR elements 50, first, a plurality of initial MR elements which become the plurality of MR elements 50 later are formed. The plurality of initial MR elements each include an initial magnetization fixing layer which becomes the magnetization fixing layer 52 later, an anti-ferromagnetic layer 51, a gap layer 53, and a free layer 54.

[0146] Next, the direction of the magnetization of the initial magnetization fixing layer is fixed using a laser and an external magnetic field including a component in a specific direction. For example, in the plurality of initial MR elements which become the plurality of first MR elements 50A constituting the resistance portions R11, R13 of the first detection circuit 10 later, a plurality of initial MR elements are irradiated with a laser while an external magnetic field in the Y direction is applied. The laser is irradiated so that the temperature of the plurality of initial MR elements irradiated with the laser becomes equal to or higher than the blocking temperature of the anti-ferromagnetic layer 51. The temperature of the plurality of initial MR elements can be adjusted, for example, by the intensity, the pulse width of the laser.

[0147] The external magnetic field in the Y direction can be divided into a component in the U direction and a component in a direction orthogonal to the U direction. After the laser is irradiated, when the temperature of the plurality of initial MR elements is lower than the blocking temperature, the direction of the magnetization of the initial magnetization fixing layer is fixed to the U direction. Thus, the initial magnetization fixing layer becomes the magnetization fixing layer 52, and the initial MR element becomes the first MR element 50A.

[0148] In addition, in the plurality of initial MR elements that become the plurality of first MR elements 50A constituting the resistance portion R12, R14 of the first detection circuit 10 later, the direction of magnetization of the initial magnetization fixing layer of each of the plurality of initial MR elements is fixed to the -U direction by using the external magnetic field in the -Y direction. In this way, the plurality of first MR elements 50A are formed. The direction of magnetization of the magnetization fixing layer 52 of each of the plurality of second MR elements 50B constituting each of the resistance portions R21 to R24 of the second detection circuit 20 is also fixed by the same method as the magnetization fixing layer 52 of each of the plurality of first MR elements 50A.

[0149] The MR element 50 is completed by patterning the laminated film by etching after fixing the direction of magnetization of the magnetization fixing layer 52 in a manner that the side of the MR element 50 is formed in the laminated film. Further, the process of fixing the direction of magnetization of the initial magnetization fixing layer can be performed after the side of the MR element 50 is formed in the laminated film. Next, the insulating layer 35 is formed around the plurality of first MR elements 50A and around the plurality of second MR elements 50B.

[0150] Next, the manufacturing process of the magnetic sensor 1 will be described with reference to Figure 16 and Figure 17 The process of forming the plurality of magnetic field generating bodies 70 will be described. Figure 16 and Figure 17 The laminated body in the manufacturing process of the magnetic sensor 1 is shown. The process of forming the plurality of magnetic field generating bodies 70 can be performed after the plurality of MR elements 50 and the insulating layer 35 are formed.

[0151] In the process of forming the plurality of magnetic field generating bodies 70, first, as shown in Figure 16 , the plurality of photoresist masks 61 is formed on the MR elements 50 and the insulating layer 35. Next, using the plurality of photoresist masks 61 as etching masks, the insulating layer 35 is etched, for example, by ion milling, in a manner that a plurality of groove portions are formed in the insulating layer 35. The plurality of groove portions has a shape corresponding to the plurality of magnetic field generating bodies 70.

[0152] Next, as shown in Figure 17 , in a state where the plurality of photoresist masks 61 remains, the plurality of initial magnetic field generating bodies 70P that become the plurality of magnetic field generating bodies 70 later is formed in a manner that the plurality of initial magnetic field generating bodies 70P is housed in the plurality of groove portions. Each of the plurality of initial magnetic field generating bodies 70P includes at least an initial ferromagnetic portion that becomes the ferromagnetic portion 73 later, and an antiferromagnetic portion 72. Next, the plurality of photoresist masks 61 is removed.

[0153] Next, the direction of magnetization of the initial ferromagnetic portion is fixed using laser light and an external magnetic field including a component in a specific direction. The method of fixing the direction of magnetization of the initial ferromagnetic portion is the same as the method of fixing the direction of magnetization of the initial magnetization fixing layer. That is, laser light is respectively irradiated to the plurality of initial magnetic field generators 70P while an external magnetic field is applied. The laser light is irradiated so that the temperature of the plurality of initial magnetic field generators 70P irradiated with the laser light becomes equal to or higher than the blocking temperature of the antiferromagnetic portion 72. The temperature of the plurality of initial magnetic field generators 70P can be adjusted by the intensity, pulse width of the laser light, for example. After the laser light is irradiated, when the temperature of the plurality of initial magnetic field generators 70P is lower than the blocking temperature, the direction of magnetization of the initial ferromagnetic portion is fixed to the specific direction described above. Thus, the initial ferromagnetic portion becomes the ferromagnetic portion 73, and the plurality of initial magnetic field generators 70P become the plurality of magnetic field generators 70.

[0154] For example, in the plurality of initial magnetic field generators 70P which become the plurality of first magnetic field generators 70A that apply a bias magnetic field to the plurality of first MR elements 50A constituting the resistance portions R11, R12 of the first detection circuit 10, laser light is irradiated to the plurality of initial magnetic field generators 70P while an external magnetic field in the X direction is applied, whereby the direction of magnetization of the initial ferromagnetic portion is fixed to the X direction. Thus, the initial ferromagnetic portion becomes the ferromagnetic portion 73, and the initial magnetic field generator 70P becomes the first magnetic field generator 70A. In addition, in the plurality of initial magnetic field generators 70P which become the plurality of first magnetic field generators 70A that apply a bias magnetic field to the plurality of first MR elements 50A constituting the resistance portions R13, R14 of the first detection circuit 10, the direction of magnetization of the initial ferromagnetic portion of each of the plurality of initial magnetic field generators 70P can be fixed to the -X direction by using an external magnetic field in the -X direction. In this way, the plurality of first magnetic field generators 70A is formed. The plurality of second magnetic field generators 70B is also formed by the same method as the plurality of first magnetic field generators 70A.

[0155] Further, the intensity of the laser light used to fix the direction of magnetization of the initial ferromagnetic portion can be lower than the intensity of the laser light used to fix the direction of magnetization of the initial magnetization fixing layer. In addition, the intensity of the laser light used to fix the direction of magnetization of the initial ferromagnetic portion is preferably an intensity that suppresses a change in the rate of change in the magnetic resistance, that is, the magnetic resistance change rate, with respect to the resistance of the MR element 50.

[0156] Next, the effects of the magnetic sensor 1 of the example embodiment will be described. In the example embodiment, a plurality of initial magnetic field generating bodies 70P are formed over the first inclined surface 33a and the second inclined surface 33b. The thickness (the dimension in the direction perpendicular to the first inclined surface 33a or the second inclined surface 33b) of the initial magnetic field generating body 70P is smaller as the inclination angle φ becomes larger. That is, in the example embodiment, the film thickness T2 of the second portion 702 is formed to be smaller than the film thickness Tl of the first portion 701 due to the first and second inclined surfaces 33a, 33b.

[0157] In addition, in the example embodiment, as described above, the plurality of initial magnetic field generating bodies 70P are formed in a state where the plurality of photoresist masks 61 remain. In general, the thickness (the dimension in the direction parallel to the Z direction) of the photoresist mask 61 located on the flat surface 33d is larger than the thickness of the photoresist mask 61 located on the opposite surface 33c. In this case, due to the influence of the shadow of the photoresist mask 61 located on the flat surface 33d, the thickness of a portion of the initial magnetic field generating body 70P formed in the vicinity of the photoresist mask 61 located on the flat surface 33d is smaller than the thickness of a portion of the initial magnetic field generating body 70P formed in the vicinity of the photoresist mask 61 located on the opposite surface 33c. That is, in the example embodiment, the film thickness T2 of the second portion 702 is formed to be smaller than the film thickness Tl of the first portion 701 due to the photoresist mask 61.

[0158] On the contrary, in the example embodiment, the MR element 50 is configured such that the interval between the first end portion Edl of the magnetic field generating body 70 in the direction parallel to the Y direction and the third end portion Ed3 of the MR element 50 is smaller than the interval between the second end portion Ed2 of the magnetic field generating body 70 in the direction parallel to the Y direction and the fourth end portion Ed4 of the MR element 50. In the YZ cross section intersecting the magnetic field generating body 70, the film thickness Tl of the first portion 701 of the magnetic field generating body 70 is larger than the film thickness T2 of the second portion 702 of the magnetic field generating body 70. That is, in the example embodiment, the MR element 50 is configured so as to be close to the first portion 701 having the larger film thickness T in the magnetic field generating body 70. Thus, according to the example embodiment, the strength of the bias magnetic field applied to the MR element 50 can be increased compared to a case where the MR element 50 is configured so as to be close to the second portion 702 having the smaller film thickness T in the magnetic field generating body 70, or a case where the MR element 50 is configured so as to overlap with the central portion of the magnetic field generating body 70 in the direction parallel to the Y direction.

[0159] [Modified Examples]

[0160] Next, the first to seventh modified examples of the magnetic sensor 1 of the example embodiment will be described. First, the first modified example will be described with reference to FIG. 14.Figure 18 A first modification will be described. Figure 18 is a view for explaining the shape of the magnetic field generating body 70 in the first modification of the magnetic sensor 1. In the first modification, the plurality of first inclined surfaces 33a and the plurality of second inclined surfaces 33b included in the plurality of opposing surfaces 33c are each formed as a flat surface or a substantially flat surface. Although not illustrated, the shape of the opposing surface 33c in a cross section parallel to the YZ plane is a triangular shape. The overall shape of each of the plurality of opposing surfaces 33c is a gable roof shape constituted by moving the triangular shape along a direction parallel to the X direction.

[0161] In the first modification, the lower surface 70a and the upper surface 70b of the magnetic field generating body 70 are each formed as a flat surface or a substantially flat surface. In the first modification, the requirements related to the film thicknesses T1, T2, T3 described with reference to Figure 14 will be satisfied.

[0162] Next, with reference to Figure 19 A second modification will be described. Figure 19 is a plan view showing the MR element 50, the magnetic field generating body 70, the lower electrode 41, and the upper electrode 42 in the second modification. In the second modification, an insulating film formed along the side surface of the MR element 50 is interposed between the MR element 50 and the magnetic field generating body 70, instead of the insulating layer 35. When viewed from the Z direction, a portion of the magnetic field generating body 70 overlaps a portion of the MR element 50.

[0163] Next, with reference to Figure 20 A third modification will be described. Figure 20 is a side view showing the magnetic field generating body 70 in the third modification. In the third modification, the magnetic field generating body 70 further includes an antiferromagnetic portion 75. The antiferromagnetic portion 75 is disposed between the ferromagnetic portion 73 and the capping layer 74. The antiferromagnetic portion 75 is formed of an antiferromagnetic material such as IrMn, PtMn, or the like. In the magnetic field generating body 70 of the third modification, the direction of magnetization of the ferromagnetic portion 73 is defined by exchange coupling between the antiferromagnetic portion 72 and the antiferromagnetic portion 75 and the ferromagnetic portion 73.

[0164] Next, with reference to Figure 21 A fourth modification will be described. Figure 21 is a side view showing the magnetic field generating body 70 in the fourth modification. In the fourth modification, the ferromagnetic portion 73 of the magnetic field generating body 70 includes a ferromagnetic layer 731 and a ferromagnetic layer 732. The buffer layer 71, the antiferromagnetic portion 72, the ferromagnetic layer 731, the ferromagnetic layer 732, and the capping layer 74 are sequentially stacked. The ferromagnetic layers 731, 732 are each formed of a ferromagnetic material containing one or more elements of Co, Fe, and Ni. In the fourth modification, the ferromagnetic layer 731 and the ferromagnetic layer 732 each have magnetization in the same direction.

[0165] In the fourth modification, the ferromagnetic layer 731 can be formed of a ferromagnetic material capable of increasing the exchange coupling energy with the antiferromagnetic portion 72, and the ferromagnetic layer 732 can be formed of a ferromagnetic material having a saturation magnetic flux density greater than that of the ferromagnetic material constituting the ferromagnetic layer 731. In this case, it is possible to increase the strength of the bias magnetic field generated by the magnetic field generating body 70 while increasing the exchange coupling energy of the ferromagnetic portion 73 constituted by the ferromagnetic layers 731, 732 and the antiferromagnetic portion 72, and to miniaturize the magnetic field generating body 70. As an example of the ferromagnetic layer 731, Co 70 Fe 30 layer can be given. As an example of the ferromagnetic layer 732, a Co 30 Fe 70 layer can be given. Further, a Co 70 Fe 30 denotes an alloy constituted by 70 atomic % of Co and 30 atomic % of Fe, and Co 30 Fe 70 denotes an alloy constituted by 30 atomic % of Co and 70 atomic % of Fe.

[0166] Next, a fifth modification will be described with reference to Figure 22 to FIG. 17. Figure 22 is a side view showing the magnetic field generating body 70 in the fifth modification. In the fifth modification, the ferromagnetic portion 73 of the magnetic field generating body 70 includes a ferromagnetic layer 731 and a ferromagnetic layer 732. The magnetic field generating body 70 further includes a nonmagnetic layer 76. The buffer layer 71, the antiferromagnetic portion 72, the ferromagnetic layer 731, the nonmagnetic layer 76, the ferromagnetic layer 732, and the cap layer 74 are sequentially stacked. The ferromagnetic layers 731, 732 are each formed of a ferromagnetic material containing one or more of Co, Fe, and Ni. The ferromagnetic layer 731 and the ferromagnetic layer 732 can be formed of the same ferromagnetic material or different ferromagnetic materials. The nonmagnetic layer 76 is formed of a nonmagnetic metal material such as Ru, for example.

[0167] In the fifth modification, the ferromagnetic layer 731 and the ferromagnetic layer 732 can be ferromagnetically exchange-coupled via the nonmagnetic layer 76 so that the directions of their magnetizations are the same. In this case, the ferromagnetic layer 731 and the ferromagnetic layer 732 have magnetizations in the same direction. The thickness of the nonmagnetic layer 76 is set to a thickness at which the exchange coupling of the ferromagnetic layer 731 and the ferromagnetic layer 732 does not disappear. By providing the nonmagnetic layer 76, it is possible to adjust the coercivity of the ferromagnetic portion 73 or to adjust the surface roughness of the base of the ferromagnetic layer 732.

[0168] Alternatively, the ferromagnetic layer 731 and the ferromagnetic layer 732 can be antiferromagnetically exchange-coupled via the nonmagnetic layer 76 through RKKY interaction. In this case, the direction of magnetization of the ferromagnetic layer 731 and the direction of magnetization of the ferromagnetic layer 732 become mutually opposite directions. The direction of magnetization of the ferromagnetic portion 73 is the same direction as the direction of magnetization of the ferromagnetic layer 731. When the ferromagnetic layer 731 and the ferromagnetic layer 732 are antiferromagnetically exchange-coupled, the net moment of the ferromagnetic portion 73 becomes small. Therefore, in the ferromagnetic portion 73, the Zeeman energy, which is the energy generated by the action of an external magnetic field on the magnetic moment, becomes small. Thus, even if an external magnetic field is applied, the direction of magnetization of the ferromagnetic portion 73 is less likely to be tilted than in the case where the Zeeman energy is large.

[0169] The thickness of the nonmagnetic layer 76 is set so that the directions of magnetization of the ferromagnetic layer 731 and the ferromagnetic layer 732 based on RKKY interaction become assumed directions, and the strength of exchange coupling based on RKKY interaction becomes an assumed strength.

[0170] Next, reference will be made to Figure 23 A sixth modification example will be described. Figure 23 is a side view showing the magnetic field generating body 70 in the sixth modification example. In the sixth modification example, the buffer layer 71, the antiferromagnetic portion 72, the ferromagnetic portion 73, and the cap layer 74 of the magnetic field generating body 70 are stacked in the order of the buffer layer 71, the ferromagnetic portion 73, the antiferromagnetic portion 72, and the cap layer 74.

[0171] Next, reference will be made to Figure 24 A seventh modification example will be described. Figure 24 is a side view showing the magnetic field generating body 70 in the seventh modification example. In the seventh modification example, the magnetic field generating body 70 includes a magnet 77 composed of a hard magnetic material, instead of the antiferromagnetic portion 72 and the ferromagnetic portion 73. The magnetic field generating body 70 can include the buffer layer 71 and the cap layer 74, or can not include them.

[0172] [Second Exemplary Embodiment]

[0173] Next, reference will be made to Figure 25 A second exemplary embodiment of the present disclosure will be described. Figure 25 is a cross-sectional view showing a part of a magnetic sensor in the exemplary embodiment. Furthermore, Figure 25 represents a cross section parallel to the YZ plane, that is, a cross section intersecting the second magnetic field generating body 70B. Hereinafter, in the case where reference will be made to Figure 25 the features common to the first magnetic field generating body 70A and the second magnetic field generating body 70B will also be described as features of the magnetic field generating body 70.

[0174] In the example embodiment, the side 70d of the magnetic field generating body 70 is positioned above the flat surface 33d of the insulating layer 33. In addition, the second end Ed2 of the magnetic field generating body 70 is also positioned above the flat surface 33d. In addition, in the example embodiment, a portion of the lower electrode 41 can be disposed above the flat surface 33d.

[0175] The other structure, function, and effect of the example embodiment are the same as those of the first example embodiment.

[0176] [Third Example Embodiment]

[0177] Next, a third example embodiment of the present disclosure will be described. The magnetic sensor of the example embodiment differs from the magnetic sensor 1 of the first example embodiment in the following points. The first detection circuit 10 (refer to Figure 4 ) in the example embodiment can be configured to detect a component in a direction parallel to the X direction of the object magnetic field and generate at least one first detection signal having a corresponding relationship with the component. The direction of magnetization of the magnetization fixed layer 52 in each of the resistive portions R11, R13 of the first detection circuit 10 can be the X direction. The direction of magnetization of the magnetization fixed layer 52 in each of the resistive portions R12, R14 of the first detection circuit 10 can be the -X direction. In addition, the free layer 54 of each of the plurality of first MR elements 50A of the first detection circuit 10 can have shape anisotropy in which the easy magnetization axis direction is a direction parallel to the Y direction. In the case where no object magnetic field is applied to the first MR element 50A, the direction of magnetization of the free layer in each of the resistive portions R11, R12 can be the Y direction. In the above case, the direction of magnetization of the free layer in each of the resistive portions R13, R14 can be the -Y direction.

[0178] In the resistive portions R11, R12, the plurality of first magnetic field generating bodies 70A can be used to apply a bias magnetic field in the Y direction to the plurality of first MR elements 50A. In the resistive portions R13, R14, the plurality of first magnetic field generating bodies 70A can be used to apply a bias magnetic field in the -Y direction to the plurality of first MR elements 50A.

[0179] The second detection circuit 20 (refer to Figure 5) can be configured to detect a component of the object magnetic field in a direction parallel to the Y direction, and generate at least one second detection signal having a correspondence relationship with the component. The direction of magnetization of the magnetization fixed layer 52 in each of the resistance portions R21, R23 of the second detection circuit 20 can be the Y direction. The direction of magnetization of the magnetization fixed layer 52 in each of the resistance portions R22, R24 of the second detection circuit 20 can be the -Y direction. In addition, the free layer 54 of each of the plurality of second MR elements 50B of the second detection circuit 20 can have a shape anisotropy in which the easy magnetization axis direction is a direction parallel to the X direction. In the case where no object magnetic field is applied to the second MR element 50B, the direction of magnetization of the free layer 54 in each of the resistance portions R21, R22 can be the X direction. In the above case, the direction of magnetization of the free layer 54 in each of the resistance portions R23, R24 can be the -X direction.

[0180] In the resistance portions R21, R22, a plurality of second magnetic field generating bodies 70B can be used to apply a bias magnetic field in the X direction to the plurality of second MR elements 50B. In the resistance portions R23, R24, a plurality of second magnetic field generating bodies 70B can be used to apply a bias magnetic field in the -X direction to the plurality of second MR elements 50B.

[0181] The processor 2 (see Figure 3 ) can generate a detection value corresponding to a component of the object magnetic field in a direction parallel to the X direction based on the at least one first detection signal, and generate a detection value corresponding to a component of the object magnetic field in a direction parallel to the Y direction based on the at least one second detection signal.

[0182] In the example embodiment, the insulating layer 33 in the first example embodiment is not provided. The plurality of lower electrodes 41A and the plurality of lower electrodes 41B (see Figure 7 and Figure 8 ) are disposed on the insulating layer 32. The upper surface of the insulating layer 32 is a plane parallel to the upper surface 31a of the substrate 31. The plurality of MR elements 50 are each formed such that the lower surface 50a and the upper surface 50b of the MR element 50 are each parallel to the upper surface 31a of the substrate 31.

[0183] Next, the shape and positional relationship of the first magnetic field generating body 70A and the first MR element 50A in the example embodiment will be described with reference to Figure 26 . Figure 26 is a view for explaining the shape and positional relationship of the first magnetic field generating body 70A and the first MR element 50A. In Figure 26 , the positional relationship of the first magnetic field generating body 70A and the first MR element 50A when viewed from the Y direction is schematically represented. Furthermore, in Figure 26For convenience, the size of the first magnetic field generator 70A is depicted more vividly than that of the first MR element 50A.

[0184] exist Figure 26 The image shows two first magnetic field generators 70A and two first MR elements 50A. Figure 26 In the middle, two first magnetic field generators 70A are configured as Figure 26 The side 70c of the first magnetic field generator 70A on the right and Figure 26 The side 70c of the first magnetic field generator 70A on the left is opposite to it.

[0185] In an exemplary embodiment, the lower surface 70a and upper surface 70b of the first magnetic field generator 70A are respectively formed as planes or substantially planes. In the exemplary embodiment, the conditions in the first exemplary embodiment and the reference are also satisfied. Figure 14 The requirements related to film thicknesses T1, T2, and T3 are explained. Furthermore, the first end Ed1 of the first magnetic field generator 70A is located further away from the reference plane, i.e., the upper surface 31a of the substrate 31, than the second end Ed2 of the first magnetic field generator 70A. That is, the distance from the upper surface 31a of the substrate 31 to the first end Ed1 is greater than the distance from the upper surface 31a of the substrate 31 to the second end Ed2.

[0186] The distance from the upper surface 31a of the substrate 31 to the third end Ed3 of the first MR element 50A and the distance from the upper surface 31a of the substrate 31 to the fourth end Ed4 of the first MR element 50A are the same or approximately the same.

[0187] exist Figure 26 In the text, the symbol C11 represents... Figure 26 The center of the first magnetic field generator 70A on the right side of the image, in a direction parallel to the X direction, is indicated by the symbol C12. Figure 26 The center of the first magnetic field generator 70A on the left side of the image, in a direction parallel to the X direction, is indicated by the symbol C13. Figure 26 The center of the first MR element 50A on the right side of the image, in a direction parallel to the X direction, is indicated by the symbol C14. Figure 26 The center of the first MR element 50A on the left side of the image, in a direction parallel to the X direction. For example... Figure 26 As shown, the interval between central C11 and central C12 is greater than the interval between central C13 and central C14.

[0188] Further, the above-described explanation of the shape and positional relationship is also applicable to the second magnetic field generating body 70B and the second MR element 50B. If the first magnetic field generating body 70A, the first MR element 50A, the X direction, and the Y direction in the above-described explanation of the shape and positional relationship are replaced with the second magnetic field generating body 70B, the second MR element 50B, the Y direction, and the X direction, respectively, the explanation of the shape and positional relationship of the second magnetic field generating body 70B and the second MR element 50B is obtained.

[0189] [Modified Example]

[0190] Next, a modified example of the magnetic sensor 101 of the example embodiment will be described. Figure 27 is an explanatory view for explaining the positional relationship of the first magnetic field generating body 70A and the first MR element 50A in the modified example. In Figure 27 , the positional relationship of the first magnetic field generating body 70A and the first MR element 50A when viewed from the Y direction is schematically represented. Figure 26

[0191] In the modified example, two first magnetic field generating bodies 70A are arranged so that Figure 27 the side surface 70d of the first magnetic field generating body 70A on the right side in Figure 27 opposes the side surface 70d of the first magnetic field generating body 70A on the left side in Figure 27 As shown in

[0192] The above-described explanation of the positional relationship is also applicable to the second magnetic field generating body 70B and the second MR element 50B. If the first magnetic field generating body 70A in the above-described explanation of the positional relationship is replaced with the second magnetic field generating body 70B, the explanation of the positional relationship of the second magnetic field generating body 70B and the second MR element 50B is obtained.

[0193] The other structures, actions, and effects in the example embodiment are the same as those in the first example embodiment.

[0194] Further, the present disclosure is not limited to the above-described example embodiments, and various modifications can be made. For example, the magnetic sensor 1 of the present disclosure can further include a third detection circuit configured to detect a component of the object magnetic field in a direction parallel to the X direction and generate at least one third detection signal having a corresponding relationship with the component. In this case, the processor 2 can be configured to generate a detection value corresponding to the component of the object magnetic field in the direction parallel to the X direction based on the at least one third detection signal. The third detection circuit can be integrated with the first and second detection circuits 10, 20, or can be included in a chip different from the first and second detection circuits 10, 20.

[0195] ​Further, the MR element 50 and the magnetic field generating body 70 of the present disclosure can be arranged along a direction parallel to the Z direction. In this case, at least a portion of the MR element 50 can be configured to overlap the magnetic field generating body 70 when viewed from the Z direction. Further, in this case, the direction of the bias magnetic field applied to the MR element 50 can be a direction opposite to the direction of the magnetization of the ferromagnetic portion 73 of the magnetic field generating body 70.

[0196] As described above, the magnetic sensor of the first aspect of the embodiment of the present disclosure includes: at least one magnetoresistance effect element; and at least one magnetic field generating body including a ferromagnetic portion composed of a ferromagnetic material and an antiferromagnetic portion composed of an antiferromagnetic material and exchange-coupled with the ferromagnetic portion, and configured to generate a bias magnetic field applied to the at least one magnetoresistance effect element. The at least one magnetoresistance effect element and the at least one magnetic field generating body are arranged along a first direction, and configured such that at least a portion of the at least one magnetoresistance effect element overlaps the at least one magnetic field generating body when viewed from the first direction. The at least one magnetic field generating body has a first end portion and a second end portion located at both ends in a second direction intersecting the first direction, and a first face connecting the first end portion and the second end portion, and has a film thickness in a direction perpendicular to the first face, and includes a first portion including the first end portion and a second portion including the second end portion. In any cross section intersecting the at least one magnetic field generating body and perpendicular to the first direction, the film thickness in the first portion is greater than the film thickness in the second portion. The at least one magnetoresistance effect element has a third end portion and a fourth end portion located at both ends in the second direction, and is configured such that a distance between the first end portion and the third end portion in the second direction is smaller than a distance between the second end portion and the fourth end portion in the second direction.

[0197] The magnetic sensor of the first aspect of the embodiment of the present disclosure can further include: a substrate having an upper surface; and a support member disposed on the substrate. The at least one magnetoresistance effect element and the at least one magnetic field generating body can be disposed on the support member. The first end portion can be located farther from the upper surface than the second end portion. The third end portion can be located farther from the upper surface than the fourth end portion.

[0198] Further, the magnetic sensor of the first aspect of the embodiment of the present disclosure can further include: a substrate having an upper surface; and a support member disposed on the substrate. The at least one magnetoresistance effect element and the at least one magnetic field generating body can be disposed on the support member. The support member can have an opposite face opposite to the at least one magnetoresistance effect element and the at least one magnetic field generating body. In any cross section, an inclination angle of the opposite face with respect to the upper surface can be larger at a second position closest to the second end portion than at a first position closest to the first end portion.

[0199] Further, the magnetic sensor of the first aspect of one embodiment of the present disclosure can further include a substrate having an upper surface, and a support member disposed on the substrate. The support member can have a support portion that supports at least one magnetic resistance effect element and at least one magnetic field generating body, and an opposing surface that opposes the at least one magnetic resistance effect element and the at least one magnetic field generating body. The opposing surface can include a curved surface portion. At least one of the first end portion and the second end portion can be positioned on the curved surface portion.

[0200] Further, in the magnetic sensor of the first aspect of one embodiment of the present disclosure, the at least one magnetic field generating body can further include a third portion between the first portion and the second portion. In any cross section, the film thickness in the third portion can be smaller than the film thickness in the first portion and can be larger than the film thickness in the second portion.

[0201] Further, in the magnetic sensor of the first aspect of one embodiment of the present disclosure, the at least one magnetic resistance effect element can include a first magnetic resistance effect element and a second magnetic resistance effect element that are disposed apart at intervals in the second direction. The at least one magnetic field generating body can include a first magnetic field generating body and a second magnetic field generating body that are disposed apart at intervals in the second direction. The first magnetic resistance effect element can be disposed so that at least a portion of the first magnetic resistance effect element overlaps the first magnetic field generating body when viewed in the first direction. The second magnetic resistance effect element can be disposed so that at least a portion of the second magnetic resistance effect element overlaps the second magnetic field generating body when viewed in the first direction. The interval between the center in the second direction of the first magnetic field generating body and the center in the second direction of the second magnetic field generating body can be different from the interval between the center in the second direction of the first magnetic resistance effect element and the center in the second direction of the second magnetic resistance effect element.

[0202] A magnetic sensor of a second aspect of one embodiment of the present disclosure includes a substrate including an upper surface, a support member disposed on the substrate, at least one magnetoresistance effect element disposed on the support member, and at least one magnetic field generating body disposed on the support member, includes a ferromagnetic portion including a ferromagnetic material and an antiferromagnetic portion including an antiferromagnetic material and exchange-coupled to the ferromagnetic portion, and is configured to generate a bias magnetic field applied to the at least one magnetoresistance effect element. The at least one magnetoresistance effect element and the at least one magnetic field generating body are arranged along a first direction, and are configured so that at least a portion of the at least one magnetoresistance effect element overlaps with the at least one magnetic field generating body when viewed from the first direction. The at least one magnetic field generating body has a first end portion and a second end portion at both ends in a second direction intersecting the first direction. The at least one magnetoresistance effect element has a third end portion and a fourth end portion at both ends in the second direction. The first end portion is positioned farther from the upper surface than the second end portion. The third end portion is positioned farther from the upper surface than the fourth end portion. The at least one magnetoresistance effect element is configured so that a distance between the first end portion and the third end portion in the second direction is smaller than a distance between the second end portion and the fourth end portion in the second direction.

[0203] In the magnetic sensor of the second aspect of one embodiment of the present disclosure, the at least one magnetic field generating body can further have a first surface connecting the first end portion and the second end portion, can have a dimension in a direction perpendicular to the first surface, i.e., a film thickness, and can include a first portion including the first end portion and a second portion including the second end portion. In any cross section intersecting the at least one magnetic field generating body and perpendicular to the first direction, the film thickness in the first portion can be larger than the film thickness in the second portion.

[0204] Further, in the magnetic sensor of the second aspect of one embodiment of the present disclosure, the support member can have an opposing surface opposite to the at least one magnetoresistance effect element and the at least one magnetic field generating body. In any cross section intersecting the at least one magnetic field generating body and perpendicular to the first direction, an inclination angle between the opposing surface and the upper surface can be larger at a second position on the opposing surface closest to the second end portion than at a first position on the opposing surface closest to the first end portion.

[0205] Further, in the magnetic sensor of the second aspect of one embodiment of the present disclosure, the support member can have an opposing surface opposite to the at least one magnetoresistance effect element and the at least one magnetic field generating body. The opposing surface can include a curved surface portion. At least one of the first end portion and the second end portion can be positioned on the curved surface portion.

[0206] Further, in the magnetic sensor of the second aspect of one embodiment of the present disclosure, the at least one magnetic field generating body can further have a first surface connecting the first end portion and the second end portion. A center of the first surface in the second direction is located closer to the upper surface than the first end portion and is located farther from the upper surface than the second end portion.

[0207] Further, in the magnetic sensor of the second aspect of one embodiment of the present disclosure, the at least one magnetic field generating body can further have a first surface connecting the first end portion and the second end portion. A center of the first surface in the second direction is located closer to the upper surface than the first end portion and is located farther from the upper surface than the second end portion.

[0208] The magnetic sensor of the third aspect of one embodiment of the present disclosure includes a substrate having an upper surface, a support member arranged over the substrate, at least one magnetic resistance effect element arranged over the support member, and at least one magnetic field generating body arranged over the support member, which includes a ferromagnetic portion composed of a ferromagnetic material and an antiferromagnetic portion composed of an antiferromagnetic material and exchange-coupled with the ferromagnetic portion and is configured to generate a bias magnetic field applied to the at least one magnetic resistance effect element. The at least one magnetic resistance effect element and the at least one magnetic field generating body are arranged in a first direction and are configured so that at least a part of the at least one magnetic resistance effect element overlaps with the at least one magnetic field generating body when viewed in the first direction. The support member has an opposite surface opposite to the at least one magnetic resistance effect element and the at least one magnetic field generating body. The at least one magnetic field generating body has a first end portion and a second end portion at both ends in a second direction intersecting the first direction. In any cross section intersecting the at least one magnetic field generating body and perpendicular to the first direction, an inclination angle of the opposite surface with respect to the upper surface is larger at a second position on the opposite surface closest to the second end portion than at a first position on the opposite surface closest to the first end portion. The at least one magnetic resistance effect element has a third end portion and a fourth end portion at both ends in the second direction and is configured so that a distance between the first end portion and the third end portion in the second direction is smaller than a distance between the second end portion and the fourth end portion in the second direction.

[0209] In the magnetic sensor of the third aspect of the embodiment of the present disclosure, the at least one magnetic field generating body can further have a first surface connecting the first end portion and the second end portion, can have a dimension in a direction perpendicular to the first surface, i.e., a film thickness, and can include a first portion including the first end portion and a second portion including the second end portion. In any cross section, the film thickness in the first portion can be greater than the film thickness in the second portion.

[0210] In addition, in the magnetic sensor of the third aspect of the embodiment of the present disclosure, the first end portion can be positioned farther from the upper surface than the second end portion. The third end portion can be positioned farther from the upper surface than the fourth end portion.

[0211] In addition, in the magnetic sensor of the third aspect of the embodiment of the present disclosure, the opposing surface can include a curved surface portion. At least one of the first end portion and the second end portion can be positioned above the curved surface portion.

[0212] In addition, in the magnetic sensor of the third aspect of the embodiment of the present disclosure, the at least one magnetic field generating body can further have a first surface connecting the first end portion and the second end portion. In any cross section, the inclination angle can be smaller at a third position on the opposing surface closest to the center of the first surface in the second direction than at a first position, and can be larger at a second position than at the third position.

[0213] In addition, in the magnetic sensor of the third aspect of the embodiment of the present disclosure, the at least one magnetic field generating body can further have a first surface connecting the first end portion and the second end portion. In any cross section, the inclination angle can be smaller at a third position on the opposing surface closest to the center of the first surface in the second direction than at a first position, and can be larger at a second position than at the third position.

[0214] Based on the above description, various modes and modifications of the present application can be implemented. Therefore, the present application can be implemented even in modes other than the above-described exemplary embodiments within the scope equivalent to the claims.

Claims

1. A magnetic sensor, characterized in that, have: At least one magnetoresistive element; and At least one magnetic field generator comprises a ferromagnetic portion made of a ferromagnetic material and an antiferromagnetic portion made of an antiferromagnetic material and exchange-coupled with the ferromagnetic portion, and is configured to generate a bias magnetic field applied to the at least one magnetoresistive element. The at least one magnetoresistive element and the at least one magnetic field generator are arranged along a first direction and configured such that, when viewed from the first direction, at least a portion of the at least one magnetoresistive element overlaps with the at least one magnetic field generator. The at least one magnetic field generator has a first end and a second end located at both ends of a second direction intersecting the first direction, and a first surface connecting the first end and the second end, having a film thickness in a direction perpendicular to the first surface, and comprising a first portion including the first end and a second portion including the second end. In any cross-section intersecting the at least one magnetic field generator and perpendicular to the first direction, the film thickness in the first portion is greater than the film thickness in the second portion. The at least one magnetoresistive element has a third end and a fourth end located at both ends in the second direction, and is configured such that the distance between the first end and the third end in the second direction is less than the distance between the second end and the fourth end in the second direction.

2. The magnetic sensor according to claim 1, characterized in that, It also has: A substrate having an upper surface; and Support components, which are disposed on the substrate, The at least one magnetoresistive element and the at least one magnetic field generator are disposed on the support member. The first end is located further away from the upper surface than the second end. The third end is located further away from the upper surface than the fourth end.

3. The magnetic sensor according to claim 1, characterized in that, It also has: A substrate having an upper surface; and Support components, which are disposed on the substrate, The at least one magnetoresistive element and the at least one magnetic field generator are disposed on the support member. The support member has a facing surface that is opposite to the at least one magnetoresistive element and the at least one magnetic field generator. In any cross section, the angle of inclination between the opposing surface and the upper surface is greater at a second position, which is the position on the opposing surface closest to the second end, than at a first position, which is the position on the opposing surface closest to the first end.

4. The magnetic sensor according to claim 1, characterized in that, It also has: A substrate having an upper surface; and Support components, which are disposed on the substrate, The support member has a supporting surface that supports the at least one magnetoresistive element and the at least one magnetic field generator, and is opposite to the at least one magnetoresistive element and the at least one magnetic field generator. The opposing surfaces include curved portions. At least one of the first end and the second end is located on the curved surface portion.

5. The magnetic sensor according to claim 1, characterized in that, The at least one magnetic field generator further includes a third part located between the first part and the second part. In any cross-section, the film thickness in the third portion is less than the film thickness in the first portion and greater than the film thickness in the second portion.

6. The magnetic sensor according to claim 1, characterized in that, The at least one magnetoresistive element includes a first magnetoresistive element and a second magnetoresistive element arranged at a distance from each other in the second direction. The at least one magnetic field generator includes a first magnetic field generator and a second magnetic field generator arranged at a distance from each other in the second direction. The first magnetoresistive element is configured such that, when viewed from the first direction, at least a portion of the first magnetoresistive element overlaps with the first magnetic field generator. The second magnetoresistive element is configured such that, when viewed from the first direction, at least a portion of the second magnetoresistive element overlaps with the second magnetic field generator. The distance between the center of the first magnetic field generator in the second direction and the center of the second magnetic field generator in the second direction is different from the distance between the center of the first magnetoresistive effect element in the second direction and the center of the second magnetoresistive effect element in the second direction.

7. A magnetic sensor, characterized in that, have: A substrate having an upper surface; A support component disposed on the substrate; At least one magnetoresistive element is disposed on the support member; as well as At least one magnetic field generator, disposed on the support member, includes a ferromagnetic portion made of ferromagnetic material and an antiferromagnetic portion made of antiferromagnetic material and exchange-coupled with the ferromagnetic portion, and is configured to generate a bias magnetic field applied to the at least one magnetoresistive element. The at least one magnetoresistive element and the at least one magnetic field generator are arranged along a first direction and configured such that, when viewed from the first direction, at least a portion of the at least one magnetoresistive element overlaps with the at least one magnetic field generator. The at least one magnetic field generator has a first end and a second end located at both ends of a second direction intersecting the first direction. The at least one magnetoresistive element has a third end and a fourth end located at both ends in the second direction. The first end is located further away from the upper surface than the second end. The third end is located further away from the upper surface than the fourth end. The at least one magnetoresistive element is configured such that the distance between the first end and the third end in the second direction is less than the distance between the second end and the fourth end in the second direction.

8. The magnetic sensor according to claim 7, characterized in that, The at least one magnetic field generator further has a first surface connecting the first end and the second end, has a film thickness that is a dimension perpendicular to the first surface, and includes a first portion including the first end and a second portion including the second end. In any cross section intersecting the at least one magnetic field generator and perpendicular to the first direction, the film thickness in the first portion is greater than the film thickness in the second portion.

9. The magnetic sensor according to claim 7, characterized in that, The support member has a facing surface that is opposite to the at least one magnetoresistive element and the at least one magnetic field generator. In any cross section intersecting the at least one magnetic field generator and perpendicular to the first direction, the angle of inclination between the opposing surface and the upper surface is greater at a second position on the opposing surface closest to the second end than at a first position on the opposing surface closest to the first end.

10. The magnetic sensor according to claim 7, characterized in that, The support member has a facing surface that is opposite to the at least one magnetoresistive element and the at least one magnetic field generator. The opposing surfaces include curved portions. At least one of the first end and the second end is located on the curved surface portion.

11. The magnetic sensor according to claim 7, characterized in that, The at least one magnetic field generator also has a first surface that connects the first end and the second end. The center of the first surface in the second direction is located closer to the upper surface than the first end and farther away from the upper surface than the second end.

12. The magnetic sensor according to claim 7, characterized in that, The at least one magnetoresistive element includes a first magnetoresistive element and a second magnetoresistive element arranged at a distance from each other in the second direction. The at least one magnetic field generator includes a first magnetic field generator and a second magnetic field generator arranged at a distance from each other in the second direction. The first magnetoresistive element is configured such that, when viewed from the first direction, at least a portion of the first magnetoresistive element overlaps with the first magnetic field generator. The second magnetoresistive element is configured such that, when viewed from the first direction, at least a portion of the second magnetoresistive element overlaps with the second magnetic field generator. The distance between the center of the first magnetic field generator in the second direction and the center of the second magnetic field generator in the second direction is different from the distance between the center of the first magnetoresistive effect element in the second direction and the center of the second magnetoresistive effect element in the second direction.

13. A magnetic sensor, characterized in that, have: A substrate having an upper surface; A support component disposed on the substrate; At least one magnetoresistive element is disposed on the support member; as well as At least one magnetic field generator, disposed on the support member, includes a ferromagnetic portion made of ferromagnetic material and an antiferromagnetic portion made of antiferromagnetic material and exchange-coupled with the ferromagnetic portion, and is configured to generate a bias magnetic field applied to the at least one magnetoresistive element. The at least one magnetoresistive element and the at least one magnetic field generator are arranged along a first direction and configured such that, when viewed from the first direction, at least a portion of the at least one magnetoresistive element overlaps with the at least one magnetic field generator. The support member has a facing surface that is opposite to the at least one magnetoresistive element and the at least one magnetic field generator. The at least one magnetic field generator has a first end and a second end located at both ends of a second direction intersecting the first direction. In any cross section intersecting the at least one magnetic field generator and perpendicular to the first direction, the angle of inclination between the opposing surface and the upper surface is greater at a second position on the opposing surface closest to the second end than at a first position on the opposing surface closest to the first end. The at least one magnetoresistive element has a third end and a fourth end located at both ends in the second direction, and is configured such that the distance between the first end and the third end in the second direction is less than the distance between the second end and the fourth end in the second direction.

14. The magnetic sensor according to claim 13, characterized in that, The at least one magnetic field generator further has a first surface connecting the first end and the second end, has a film thickness that is a dimension perpendicular to the first surface, and includes a first portion including the first end and a second portion including the second end. In any cross-section, the film thickness in the first portion is greater than the film thickness in the second portion.

15. The magnetic sensor according to claim 13, characterized in that, The first end is located further away from the upper surface than the second end. The third end is located further away from the upper surface than the fourth end.

16. The magnetic sensor according to claim 13, characterized in that, The opposing surfaces include curved portions. At least one of the first end and the second end is located on the curved surface portion.

17. The magnetic sensor according to claim 13, characterized in that, The at least one magnetic field generator also has a first surface that connects the first end and the second end. In any cross-section, the tilt angle is smaller at the first position than at the third position on the opposite surface closest to the center of the first surface in the second direction, and larger at the second position than at the third position.

18. The magnetic sensor according to claim 13, characterized in that, The at least one magnetoresistive element includes a first magnetoresistive element and a second magnetoresistive element arranged at a distance from each other in the second direction. The at least one magnetic field generator includes a first magnetic field generator and a second magnetic field generator arranged at a distance from each other in the second direction. The first magnetoresistive element is configured such that, when viewed from the first direction, at least a portion of the first magnetoresistive element overlaps with the first magnetic field generator. The second magnetoresistive element is configured such that, when viewed from the first direction, at least a portion of the second magnetoresistive element overlaps with the second magnetic field generator. The distance between the center of the first magnetic field generator in the second direction and the center of the second magnetic field generator in the second direction is different from the distance between the center of the first magnetoresistive effect element in the second direction and the center of the second magnetoresistive effect element in the second direction.

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