Evaluation method for deposition chamber of organic device manufacturing equipment

Abstract

To provide a method for evaluating accuracy of a relative position between a mask device and an electrode substrate in an organic device manufacturing apparatus.SOLUTION: An evaluation method includes a vapor deposition process for forming a vapor-deposited layer 130 on a substrate 110 of a standard substrate by vapor-depositing a material, through an open hole 56 of a standard mask 50A of a standard mask device, on the substrate 110 of the standard substrate including a standard mark 63, in a vapor deposition chamber, a carrying-out process for carrying out the standard substrate on which the vapor-deposited layer is formed from a manufacturing apparatus, and an observation process for observing physical relationship between the standard mark on the standard substrate carried out from the manufacturing apparatus and the vapor-deposited layer.SELECTED DRAWING: Figure 15

Description

[Technical Field]

[0001] Embodiments of the present disclosure relate to a method for evaluating a deposition chamber of an organic device manufacturing apparatus, a standard mask apparatus and a standard substrate used in the evaluation method, a method for manufacturing a standard mask apparatus, an organic device manufacturing apparatus including a deposition chamber evaluated by the evaluation method, an organic device including a deposition layer formed in a deposition chamber evaluated by the evaluation method, and a method for maintaining a deposition chamber of an organic device manufacturing apparatus. [Background technology]

[0002] Organic electroluminescence (EL) display devices have been attracting attention in the field of display devices used in portable devices such as smartphones and tablet PCs. Known manufacturing methods and apparatuses for organic devices such as organic EL display devices include a method and apparatus for forming pixels in a desired pattern using a mask with through-holes arranged in a desired pattern. For example, an electrode substrate having a first electrode formed in a pattern corresponding to the pixels is first prepared. The electrode substrate is then loaded into the manufacturing apparatus, and an organic material is deposited on the first electrode through the through-holes in the mask in a deposition chamber to form an organic layer such as an emissive layer on the first electrode. A second electrode is then formed on the organic layer. The organic layer and other components on the electrode substrate are then sealed with a sealing substrate, and the electrode substrate is then removed from the manufacturing apparatus. In this manner, an organic device such as an organic EL display device can be manufactured. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2019-65393 Summary of the Invention [Problem to be solved by the invention]

[0004] When a manufactured organic device does not meet specifications, it is desirable to investigate the cause. [Means for solving the problem]

[0005] A method for evaluating a vapor deposition chamber of an organic device manufacturing apparatus according to an embodiment of the present disclosure includes: a deposition step of depositing a material onto a standard substrate including a standard mark through a through-hole of a mask of a standard mask device in the deposition chamber to form a deposition layer on the substrate; a carrying-out step of carrying out the substrate on which the deposition layer is formed from the manufacturing apparatus; The method may further include an observation step of observing the positional relationship between the reference mark and the deposition layer on the substrate carried out from the manufacturing apparatus. [Effects of the Invention]

[0006] According to the present disclosure, a deposition chamber of an organic device manufacturing apparatus can be evaluated. [Brief explanation of the drawings]

[0007] [Figure 1A] FIG. 1 is a plan view illustrating an example of an organic device. [Figure 1B] 1B is a cross-sectional view of the organic device of FIG. 1A taken along the IA-IA direction. [Figure 2] FIG. 2 is a plan view showing an example of an organic device group. [Figure 3] FIG. 1 is a plan view showing an example of an apparatus for manufacturing an organic device. [Figure 4] FIG. 2 is a vertical cross-sectional view showing an example of a first vapor deposition chamber of a manufacturing apparatus. [Figure 5] FIG. 2 is a plan view showing an example of a mask device in the first deposition chamber. [Figure 6] FIG. 2 is a plan view showing an example of an intermediate portion of a mask of the mask device. [Figure 7] FIG. 2 is a cross-sectional view showing an example of a through-hole in a mask. [Figure 8] FIG. 2 is a vertical cross-sectional view showing an example of a first deposition chamber in which a standard substrate and a standard mask device are installed. [Figure 9A] FIG. 1 is a plan view showing an example of a standard substrate. [Figure 9B]FIG. 10 is a plan view showing an example of the relationship between a standard substrate and a device space. [Figure 10] 9B is an enlarged plan view showing the region of the standard substrate in FIG. 9A surrounded by a dashed line marked with the symbol X. FIG. [Figure 11A] FIG. 2 is a plan view showing an example of a standard mark in a standard mark region of a standard substrate. [Figure 11B] 10 is a cross-sectional view showing an example of a standard mark in a standard mark region of a standard substrate. FIG. [Figure 12] FIG. 2 is a plan view showing an example of a standard mark in a standard mark area. [Figure 13A] FIG. 1 is a plan view showing an example of a standard mask device. [Figure 13B] FIG. 10 is a plan view showing an example of the relationship between a standard mask device and a device space. [Figure 14] 13B is an enlarged plan view showing the region surrounded by the dashed line marked with the symbol XIV in the standard mask of FIG. 13A. FIG. [Figure 15] 10 is a cross-sectional view showing a state in which a first deposition layer is formed on a standard mark of a standard substrate through a through-hole in a standard mask. FIG. [Figure 16] FIG. 2 is a plan view showing an example of a first vapor deposition layer formed on a standard mark of a standard substrate. [Figure 17] FIG. 2 is a plan view showing an example of a first vapor deposition layer formed on a standard mark of a standard substrate. [Figure 18] FIG. 2 is a plan view showing an example of a first vapor deposition layer formed on a standard mark of a standard substrate. [Figure 19] FIG. 2 is a plan view showing an example of a first vapor deposition layer formed on a standard mark of a standard substrate. [Figure 20] FIG. 4 is a diagram showing an example of evaluation results of the first deposition chamber. [Figure 21] FIG. 1 is a plan view showing an example of a standard mask device. [Figure 22] FIG. 1 is a plan view showing an example of a standard mask device. [Figure 23] FIG. 23 is an enlarged plan view showing the middle part of the standard mask of FIG. 22. [Figure 24]FIG. 10 is a plan view showing an example of the middle part of a standard mask. [Figure 25] FIG. 10 is a plan view showing an example of the middle part of a standard mask. [Figure 26] FIG. 10 is a plan view showing an example of the middle part of a standard mask. [Figure 27] FIG. 2 is a plan view showing an example of a standard mark on a standard substrate. [Figure 28] FIG. 2 is a plan view showing an example of a standard mark on a standard substrate. [Figure 29] FIG. 2 is a plan view showing an example of a standard mark on a standard substrate. [Figure 30] 10A to 10C are cross-sectional views showing an example of a step of observing a first vapor deposition layer on a standard mark of a standard substrate. [Figure 31] 10A to 10C are cross-sectional views showing an example of a step of observing a first vapor deposition layer on a standard mark of a standard substrate. [Figure 32] FIG. 10 is a plan view showing an example of the middle part of a standard mask. [Figure 33] FIG. 2 is a plan view showing an example of a mask device in a deposition chamber. [Figure 34] FIG. 34 is a plan view showing a state in which the mask is removed from the mask device of FIG. 33. [Figure 35] FIG. 34 is a cross-sectional view of the mask device of FIG. 33 taken along line XXXV-XXXV. [Figure 36] FIG. 36 is a cross-sectional view of the mask device of FIG. 33 taken along line XXXVI-XXXVI. [Figure 37A] 35 is an enlarged plan view showing an example of a mask support in the area surrounded by the dotted line indicated by the reference numeral XXXVIIA in FIG. 34. FIG. [Figure 37B] 37B is an enlarged plan view showing the first connection portion of FIG. 37A. FIG. [Figure 38A] FIG. 37B is a cross-sectional view of the mask support of FIG. 37A taken along line XXXVIIIA-XXXVIIIA. [Figure 38B] FIG. 38B is an enlarged cross-sectional view of the second connection portion of FIG. 38A. [Figure 39] 10A to 10C are cross-sectional views showing an example of a method for manufacturing a mask support. [Figure 40]10A to 10C are cross-sectional views showing an example of a method for manufacturing a mask support. [Figure 41] FIG. 41 is a plan view showing the plate of FIG. 40 as viewed from the second surface side. [Figure 42] FIG. 1 is a cross-sectional view showing an example of a vapor deposition layer formed using a mask device. [Figure 43] FIG. 2 is a cross-sectional view of the mask device. [Figure 44] FIG. 1 is a plan view showing an example of a mask device. [Figure 45] FIG. 45 is a plan view showing the mask device of FIG. 44 with the mask removed. [Figure 46] FIG. 45 is a cross-sectional view of the mask device of FIG. 44 taken along line XXXXVI-XXXXVI. [Figure 47] FIG. 45 is a cross-sectional view of the mask device of FIG. 44 taken along line XXXXVII-XXXXVII. [Figure 48A] FIG. 46 is an enlarged plan view showing an example of a mask support in the area surrounded by the dotted line indicated by the reference symbol XXXXVIIIA in FIG. 45. [Figure 48B] FIG. 48B is an enlarged plan view showing the first connection portion of FIG. 48A. [Figure 49A] FIG. 48B is a cross-sectional view of the mask support of FIG. 48A taken along line XXXXIXA-XXXXIXA. [Figure 49B] FIG. 49B is an enlarged cross-sectional view of the second connection portion of FIG. 49A. [Figure 50] FIG. 1 is a plan view showing an example of a mask device. [Figure 51] FIG. 51 is a plan view showing the state in which the mask is removed from the mask device of FIG. 50. [Figure 52] FIG. 51 is a cross-sectional view of the mask device of FIG. 50 taken along line XXXXXII-XXXXXII. [Figure 53] 53 is an enlarged cross-sectional view showing the welding area of ​​the second rail member of the mask device of FIG. 52 and its surroundings. FIG. [Figure 54] FIG. 1 is a plan view showing an example of a mask device. [Figure 55] FIG. 55 is a plan view showing the mask device of FIG. 54 with the mask removed. [Figure 56]55 is a cross-sectional view of the mask device of FIG. 54 taken along line XXXXXVI-XXXXXVI. [Figure 57] 55 is a cross-sectional view of the mask device of FIG. 54 taken along line XXXXXVII-XXXXXVII. [Figure 58A] FIG. 56 is an enlarged plan view showing an example of a mask support in the area surrounded by the dotted line marked with the reference numeral XXXXXVIIIA in FIG. 55. [Figure 58B] FIG. 58B is an enlarged plan view showing the third connection portion of FIG. 58A. [Figure 59] FIG. 2 is a plan view showing an example of a mask support; [Figure 60] FIG. 2 is a plan view showing an example of a mask support; [Figure 61] 60 is a cross-sectional view showing a mask device provided with the mask support shown in FIG. 59, taken along line XXXXXXI-XXXXXXI in FIG. 59. [Figure 62] 61 is a cross-sectional view showing a mask device provided with the mask support shown in FIG. 60 when cut along the line XXXXXXII-XXXXXXII in FIG. 60. [Figure 63] FIG. 1 is a cross-sectional view showing an example of a mask device. [Figure 64] FIG. 1 is a cross-sectional view showing an example of a mask device. [Figure 65] FIG. 1 is a cross-sectional view showing an example of a mask device. [Figure 66] FIG. 1 is a cross-sectional view showing an example of a mask device. [Figure 67] FIG. 1 is a plan view showing an example of a mask device. [Figure 68] FIG. 2 is a plan view showing a mask support according to an embodiment. [Figure 69] 10 is a table showing the results of a simulation. [Figure 70] 10 is a graph showing the results of a simulation. [Figure 71] 10 is a graph showing the results of a simulation. [Figure 72] FIG. 10 is a diagram showing a deposition chamber equipped with a mask device according to a third embodiment. [Figure 73]FIG. 10 is a plan view showing a mask device according to a third embodiment. [Figure 74] FIG. 74 is a diagram schematically showing a cross section taken along line AA in FIG. 73. [Figure 75A] FIG. 75 is a partially enlarged cross-sectional view of FIG. 74. [Figure 75B] FIG. 75B is a partially enlarged cross-sectional view of FIG. 75A. [Figure 76] FIG. 74 is a partially enlarged plan view showing the mask device of FIG. 73. [Figure 77] FIG. 74 is an enlarged plan view showing a group of through holes in the mask of FIG. 73. [Figure 78] 10A to 10C are diagrams illustrating a holding step in the method for manufacturing a mask device according to the third embodiment. [Figure 79] 10A to 10C are diagrams illustrating an arrangement step in a manufacturing method of a mask device according to a third embodiment. [Figure 80A] 10A and 10B are diagrams illustrating a first through-hole confirmation step in the mask alignment step in the method for manufacturing the mask device according to the third embodiment. [Figure 80B] 10A and 10B are diagrams illustrating a moving step in a mask alignment step in a method for manufacturing a mask device according to a third embodiment. [Figure 80C] 10A and 10B are diagrams illustrating a tension adjusting step in a mask alignment step in a manufacturing method of a mask device according to a third embodiment. [Figure 81] FIG. 11 is a partially enlarged plan view showing the mask device in a mask alignment step of the method for manufacturing the mask device according to the third embodiment. [Figure 82] 10 is a partially enlarged plan view showing the mask device in a mask alignment step of the manufacturing method of the mask device. FIG. [Figure 83] FIG. 83 is a diagram schematically showing a cross section taken along line BB in FIG. 82. [Figure 84] FIG. 83 is a diagram schematically showing a cross section taken along line CC in FIG. 82. [Figure 85] 10A to 10C are diagrams illustrating a bonding step in the method for manufacturing a mask device according to the third embodiment. [Figure 86] 10A to 10C are diagrams illustrating a removal step in the manufacturing method of the mask device according to the third embodiment. [Figure 87] FIG. 11 is a plan view showing a frame to which one mask is bonded in a method for manufacturing a mask device according to a third embodiment. [Figure 88] FIG. 10 is a plan view showing an intermediate mask device obtained by a method for manufacturing a mask device according to a third embodiment. [Figure 89] 10A to 10C are diagrams illustrating a cutting step in a manufacturing method of a mask device according to a third embodiment. [Figure 90] FIG. 11 is a partially enlarged plan view showing the mask device in a cutting step of the method for manufacturing the mask device according to the third embodiment. [Figure 91] 10A to 10C are diagrams illustrating a bonding step in a method for manufacturing an organic device according to a third embodiment. [Figure 92] 10A to 10C are diagrams illustrating a vapor deposition step in a method for manufacturing an organic device according to a third embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] In this specification and drawings, unless otherwise specified, terms that refer to a material that forms the basis of a certain configuration, such as "substrate," "base material," "plate," "sheet," and "film," are not to be distinguished from one another solely on the basis of differences in name.

[0009] In this specification and drawings, unless otherwise specified, terms that specify shapes, geometric conditions, and their degrees, such as "parallel" and "orthogonal," and values ​​of lengths and angles, are not to be construed as being bound by strict meanings, but rather as including a range within which similar functions can be expected.

[0010] In this specification and drawings, unless otherwise specified, when a certain component, such as a certain region, is referred to as "above" or "below," "upper" or "lower," or "upward" or "below" another component, such as another region, this includes cases where the component is in direct contact with the other component. It also includes cases where another component is contained between the component and the other component, i.e., cases where the components are in indirect contact. Furthermore, unless otherwise specified, the terms "above," "upper side," or "upper," or "under," "lower side," or "lower" may be used in the up-down direction.

[0011] In this specification and drawings, unless otherwise specified, the same or similar symbols are used to designate the same parts or parts having similar functions, and repeated explanations may be omitted. Furthermore, for the sake of convenience, the dimensional ratios of the drawings may differ from the actual ratios, and some components may be omitted from the drawings.

[0012] Unless otherwise specified in the present specification and drawings, one embodiment of the present specification may be combined with other embodiments to the extent that no contradiction occurs. In addition, other embodiments may also be combined with each other to the extent that no contradiction occurs.

[0013] Unless otherwise specified, in this specification and drawings, when a plurality of steps are disclosed in a method such as a manufacturing method, other steps that are not disclosed may be performed between the disclosed steps. In addition, the order of the disclosed steps is arbitrary within the range that does not cause contradictions.

[0014] In this specification and drawings, unless otherwise specified, a numerical range expressed by the symbol "to" includes the numerical values ​​before and after the symbol "to." For example, the numerical range defined by the expression "34 to 38 mass%" is the same as the numerical range defined by the expression "34 mass% or more and 38 mass% or less."

[0015] Hereinafter, an embodiment of the present disclosure will be described in detail with reference to the drawings. Note that the embodiment described below is an example of an embodiment of the present disclosure, and the present disclosure should not be interpreted as being limited to only these embodiments.

[0016] A first aspect of the present disclosure is a method for evaluating a vapor deposition chamber of an organic device manufacturing apparatus, comprising: a deposition step of depositing a material onto a standard substrate including a standard mark through a through-hole of a standard mask of a standard mask device in the deposition chamber to form a deposition layer on the standard substrate; a carrying-out step of carrying out the standard substrate on which the deposition layer is formed from the manufacturing apparatus; and an observation step of observing the positional relationship between the standard mark and the deposition layer on the standard substrate carried out from the manufacturing apparatus.

[0017] In a second aspect of the present disclosure, the evaluation method according to the first aspect described above may further include a determination step of determining whether or not the positional relationship between the standard mark and the vapor deposition layer satisfies a condition.

[0018] A third aspect of the present disclosure relates to the evaluation method according to the second aspect described above, wherein the standard substrate includes divided regions defined by dividing an area of ​​the standard substrate on which the deposition layer is to be formed into m regions in a first direction and n regions in a second direction intersecting the first direction, where m and n are integers equal to or greater than 2. The determining step may determine, for each divided region, whether a positional relationship between the standard mark and the deposition layer satisfies a condition.

[0019] A fourth aspect of the present disclosure is an evaluation method according to the second aspect or the third aspect described above, wherein the determination step may include a step of determining whether the outer edge of the deposition layer is located inside the outer edge of a first mark of the standard mark.

[0020] A fifth aspect of the present disclosure is an evaluation method according to the fourth aspect described above, wherein the determination step may include a step of determining whether the outer edge of the deposition layer is located outside the outer edge of a second mark located more inward than the first mark.

[0021] A sixth aspect of the present disclosure is an evaluation method according to the second or third aspect, wherein the vapor deposition step may include forming the vapor deposition layer on a light-shielding layer that constitutes the standard mark, and the observation step may include a step of irradiating the standard mark with light from a surface of the standard substrate opposite to the light-shielding layer and the vapor deposition layer, and observing whether excitation light is generated from the vapor deposition layer.

[0022] A seventh aspect of the present disclosure is an evaluation method according to each of the first to sixth aspects described above, wherein the standard mask of the standard mask device may have a standard area including the through hole and a non-through area located around the through hole and having a dimension larger than the arrangement period of the through holes in a planar view.

[0023] An eighth aspect of the present disclosure is an evaluation method according to the seventh aspect described above, wherein the standard mask of the standard mask device may have two or more standard areas located in the central region in the width direction of the standard mask and aligned in the longitudinal direction of the standard mask.

[0024] A ninth aspect of the present disclosure is an evaluation method according to the eighth aspect described above, wherein the standard mask of the standard mask device may be located in an end region adjacent to the central region in the width direction of the standard mask, and may have two or more of the through holes aligned in the longitudinal and width directions of the standard mask.

[0025] A tenth aspect of the present disclosure is an evaluation method according to the eighth aspect described above, wherein the standard mask of the standard mask device may have a non-penetrating region located in an end region adjacent to the central region in the width direction of the standard mask.

[0026] An eleventh aspect of the present disclosure relates to the evaluation method according to each of the first to tenth aspects described above, wherein the standard mask device may include a standard region including the through-hole and aligned in a first direction and a second direction intersecting the first direction. The standard region may be located in a device space. The device space is a space overlapping the organic device manufactured in the deposition chamber.

[0027] A twelfth aspect of the present disclosure is an evaluation method according to each of the first to eleventh aspects described above, wherein the standard mask device includes standard regions that include the through-hole and are aligned in a first direction and a second direction intersecting the first direction. A ratio of a dimension of the standard region in the first direction to a dimension of a space between two of the standard regions in the first direction may be 0.1 or more. A ratio of a dimension of the standard region in the second direction to a dimension of a space between two of the standard regions in the second direction may be 0.1 or more.

[0028] A thirteenth aspect of the present disclosure is an evaluation method according to each of the first to twelfth aspects described above, wherein the standard mask device may include a frame including a pair of first sides extending in a first direction and a pair of second sides extending in a second direction intersecting the first direction, and two or more standard masks fixed to the pair of second sides and aligned in the second direction.

[0029] A fourteenth aspect of the present disclosure is an evaluation method according to each of the first to thirteenth aspects described above, wherein the unloading step may unload the standard substrate from the manufacturing apparatus in a state in which elements on the standard substrate, including the organic layer, are not sealed.

[0030] A fifteenth aspect of the present disclosure is a standard mask device used in the evaluation method according to the first aspect described above.

[0031] A sixteenth aspect of the present disclosure may include a standard mask device according to the fifteenth aspect described above, which includes a standard area including a through hole and a non-through area located around the through hole and having a dimension larger than the arrangement period of the through holes in a planar view.

[0032] A seventeenth aspect of the present disclosure is a standard mask apparatus for evaluating a deposition chamber of an organic device manufacturing apparatus, comprising: a standard mask including a through hole; the standard mask device includes the through-hole and includes a standard region aligned in a first direction and a second direction intersecting the first direction; a ratio of a dimension of the standard region in the first direction to a dimension of a gap between two of the standard regions in the first direction is 0.1 or more; The standard mask device has a ratio of the dimension of the standard region in the second direction to the dimension of the gap between two of the standard regions in the second direction of 0.1 or more.

[0033] According to an eighteenth aspect of the present disclosure, in the standard mask apparatus according to the seventeenth aspect, the standard region may be located in a device space, which is a space overlapping the organic device to be manufactured in the deposition chamber.

[0034] A 19th aspect of the present disclosure is a standard mask device according to either the 17th aspect or the 18th aspect described above, wherein the standard mask device may include a frame including a pair of first sides extending in the first direction, a pair of second sides extending in the second direction, and an opening, and two or more standard masks fixed to the pair of second sides and aligned in the second direction.

[0035] A twentieth aspect of the present disclosure provides a standard mask device according to the nineteenth aspect, wherein the standard region is located in a central region, which is a central region when the standard mask is divided into three equal parts in the second direction.

[0036] A 21st aspect of the present disclosure is a standard mask device according to the 20th aspect described above, wherein the standard region may include a non-penetrating region located around the through holes in the central region and having dimensions larger than the arrangement period of the through holes in a planar view.

[0037] A 22nd aspect of the present disclosure relates to a standard mask device according to any one of the 19th to 21st aspects described above, wherein the standard mask device may include a rung located at the opening and connected to the frame. The frame may include a frame first surface to which the standard mask is fixed, a frame second surface located opposite the frame first surface, an inner surface located between the frame first surface and the frame second surface and to which the rung is connected, and an outer surface located opposite the inner surface. The rung may include a rung first surface located on the side of the frame first surface, a rung second surface located opposite the rung first surface, and a rung side surface located between the rung first surface and the rung second surface. The frame first surface and the rung first surface may be continuous.

[0038] A twenty-third aspect of the present disclosure is such that, in the standard mask device according to the twenty-second aspect described above, the frame first surface and the crosspiece first surface may be located on the same plane.

[0039] A 24th aspect of the present disclosure is a standard mask device according to either the 22nd aspect or the 23rd aspect described above, wherein, in a plan view, the inner surface and the rib side surface may be connected via a first connecting portion having a first radius of curvature.

[0040] A 25th aspect of the present disclosure is a standard mask device according to each of the 22nd to 24th aspects described above, wherein the inner surface and the second surface of the bar may be connected via a second connecting portion having a second radius of curvature.

[0041] A 26th aspect of the present disclosure is a standard mask device according to each of the 22nd to 25th aspects described above, wherein the bars may include a first bar connected to the first side.

[0042] A 27th aspect of the present disclosure is a standard mask device according to each of the 22nd to 25th aspects described above, wherein the bars may include a second bar connected to the second side.

[0043] A 28th aspect of the present disclosure is a standard mask device according to any one of the 22nd to 25th aspects, wherein the bars include a first bar connected to the first side and a second bar connected to the second side. In plan view, a bar side surface of the first bar and a bar side surface of the second bar may be connected via a third connection portion having a third radius of curvature.

[0044] A 29th aspect of the present disclosure is a standard mask device according to each of the 22nd to 28th aspects described above, wherein the thickness of the bars may be smaller than the thickness of the frame.

[0045] A thirtieth aspect of the present disclosure may be such that, in the standard mask device according to the twenty-ninth aspect described above, the ratio of the thickness of the bars to the thickness of the frame is 0.85 or less.

[0046] A thirty-first aspect of the present disclosure is a method for manufacturing a standard mask device for evaluating a deposition chamber of an organic device manufacturing device, the method comprising: A fixing step of fixing the standard mask to the frame is provided, the frame includes a pair of first sides extending in a first direction, a pair of second sides extending in a second direction intersecting the first direction, and an opening; the standard mask includes a pair of ends in the first direction and a through-hole located between the pair of ends, The fixing step includes a positioning step of positioning the standard mask so that the pair of ends overlap the pair of second sides; a mask alignment step of adjusting a position of the standard mask with respect to the frame while applying a bonding tension to the standard mask in the first direction and pressing the standard mask against the frame after the placement step; After the mask alignment step, the manufacturing method includes a bonding step of bonding the standard mask to the frame while applying a bonding tension to the standard mask in the first direction and pressing the standard mask against the frame.

[0047] A 32nd aspect of the present disclosure is a manufacturing method according to the 31st aspect described above, wherein the mask alignment process may include a first confirmation process of confirming the position of the through hole relative to the frame while applying bonding tension to the standard mask in the first direction and pressing the standard mask against the frame.

[0048] A 33rd aspect of the present disclosure is a manufacturing method according to each of the 31st aspect or the 32nd aspect described above, wherein the mask alignment process may include a moving process of moving the standard mask in any direction within a two-dimensional plane defined by the first direction and the second direction while applying bonding tension to the standard mask in the first direction and pressing the standard mask against the frame.

[0049] A 34th aspect of the present disclosure relates to the manufacturing method according to each of the 31st to 33rd aspects described above, wherein the frame may include a frame first surface to which the standard mask is fixed, a frame second surface located opposite the frame first surface, an inner surface located between the frame first surface and the frame second surface and facing the opening, and a frame wall surface located outside the inner surface in a plan view and connected to the frame first surface. The frame wall surface may include a first wall edge located at a position where the frame wall surface and the frame first surface intersect. In the mask alignment step, the pair of end portions may overlap the first wall edge. The portion of the first wall edge overlapping the pair of end portions may extend linearly in the second direction.

[0050] A 35th aspect of the present disclosure relates to the manufacturing method according to each of the 31st to 34th aspects, wherein the standard mask device may include a crosspiece located in the opening and connected to the frame. The frame may include a frame first surface to which the standard mask is fixed, a frame second surface located opposite the frame first surface, an inner surface located between the frame first surface and the frame second surface and to which the crosspiece is connected, and an outer surface located opposite the inner surface. The crosspiece may include a crosspiece first surface located on the side of the frame first surface, a crosspiece second surface located opposite the crosspiece first surface, and a crosspiece side surface located between the crosspiece first surface and the crosspiece second surface. The frame first surface and the crosspiece first surface may be continuous.

[0051] A 36th aspect of the present disclosure is that, in a manufacturing method according to each of the above-mentioned 31st to 35th aspects, the standard mask device may include two or more standard masks fixed to the pair of second sides and arranged in the second direction.

[0052] A 37th aspect of the present disclosure relates to the manufacturing method according to the 36th aspect, wherein the standard mask device may include standard regions including the through holes and aligned in a first direction and a second direction intersecting the first direction. The standard regions may include non-through regions located around the through holes in a central region and having dimensions greater than the arrangement period of the through holes in a plan view. The central region may be the central region when the standard mask is divided into thirds in the second direction.

[0053] A 38th aspect of the present disclosure is a manufacturing method according to the 37th aspect described above, wherein the standard region may include a non-penetrating region located around the through holes in the central region and having dimensions in a planar view larger than the arrangement period of the through holes.

[0054] A thirty-ninth aspect of the present disclosure is a standard substrate used in the evaluation method according to the first aspect described above.

[0055] A fortieth aspect of the present disclosure is an organic device manufacturing apparatus including a vapor deposition chamber evaluated by the evaluation method according to the fourth aspect described above, In the determining step, the manufacturing apparatus determines that the outer edge of the vapor deposition layer is located inside the outer edge of the first mark of the standard mark.

[0056] A forty-first aspect of the present disclosure is an organic device including a deposition layer formed in the deposition chamber of the manufacturing apparatus according to the fortieth aspect described above.

[0057] A forty-second aspect of the present disclosure is a maintenance method for a vapor deposition chamber of an organic device manufacturing apparatus, comprising: a combining step of combining a standard substrate including a standard mark and a standard mask device in the deposition chamber based on combination conditions; a deposition step of depositing a material onto a standard substrate including a standard mark through a through-hole of a standard mask of a standard mask device in the deposition chamber to form a deposition layer on the standard substrate; a carrying-out step of carrying out the standard substrate on which the deposition layer is formed from the manufacturing apparatus; an observation step of observing a positional relationship between the reference mark and the deposition layer on the reference substrate carried out from the manufacturing apparatus; and an adjusting step of adjusting the combination conditions based on the positional relationship between the standard mark and the vapor deposition layer.

[0058] A 43rd aspect of the present disclosure is a maintenance method according to the 42nd aspect described above, wherein the adjustment process may include a magnet adjustment process of adjusting the magnetic force distribution of a magnet located on the side of the surface of the standard substrate opposite the standard mask device, or the electrostatic force distribution of an electrostatic chuck.

[0059] A 44th aspect of the present disclosure is a maintenance method according to either the 42nd aspect or the 43rd aspect described above, wherein the adjustment process may include a cooling plate process for adjusting the position of a cooling plate located on the side of the surface of the standard substrate opposite the standard mask device.

[0060] Hereinafter, an embodiment of the present disclosure will be described in detail with reference to the drawings. Note that the embodiment described below is an example of an embodiment of the present disclosure, and the present disclosure should not be interpreted as being limited to only these embodiments.

[0061] Fig. 1A is a plan view showing an example of an organic device 100. Fig. 1B is a cross-sectional view of the organic device 100 of Fig. 1A as viewed from the IA-IA direction. Note that a second electrode layer 141 and a sealing substrate 150 are omitted from Fig. 1A.

[0062] As shown in FIGS. 1A and 1B , the organic device 100 may include a substrate 110, a first electrode layer 120 located on a first surface 111 of the substrate 110, a first organic layer 131, a second organic layer 132, and a third organic layer 133 located on the first electrode layer 120, and a second electrode layer 141 located on the first organic layer 131, the second organic layer 132, and the third organic layer 133. In the following description, the substrate 110 on which the first electrode layer 120 is formed is also referred to as an electrode substrate 105. As shown by the dotted lines in FIG. 1A , the first electrode layer 120 may be aligned along a first array direction F1 and a second array direction F2 in a planar view. As shown in FIG. 1A , the second array direction F2 may be perpendicular to the first array direction F1. Although not shown, the second array direction F2 does not have to be perpendicular to the first array direction F1.

[0063] As shown in FIG. 1B, the organic device 100 may include an insulating layer 160 located between two adjacent first electrode layers 120 in a planar view. The insulating layer 160 may contain, for example, polyimide. The insulating layer 160 may overlap an edge of the first electrode layer 120. In this case, the dotted line labeled 120 in FIG. 1A indicates the outer edge of a region of the first electrode layer 120 that does not overlap with the insulating layer 160. As shown in FIG. 1A, the first organic layer 131, the second organic layer 132, and the third organic layer 133 may extend to surround the first electrode layer 120 in a planar view.

[0064] The substrate 110 may be an insulating plate-like member. The substrate 110 is preferably transparent so as to transmit light. The substrate 110 includes, for example, glass.

[0065] The first electrode layer 120 includes a conductive material. For example, the first electrode layer 120 includes a metal, a conductive metal oxide, or other inorganic material. The first electrode layer 120 may include a transparent and conductive metal oxide such as indium tin oxide.

[0066] The first organic layer 131, the second organic layer 132, and the third organic layer 133 are layers containing an organic semiconductor material. When the organic device 100 is an organic EL display device, the first organic layer 131, the second organic layer 132, and the third organic layer 133 may each be an emitting layer. For example, the first organic layer 131, the second organic layer 132, and the third organic layer 133 may each be a red emitting layer, a green emitting layer, and a blue emitting layer. As shown in FIG. 1A , the first organic layer 131, the second organic layer 132, and the third organic layer 133 may be arranged such that organic layers of the same type are not adjacent to each other in the first arrangement direction F1 and the second arrangement direction F2. For example, the first organic layer 131, the second organic layer 132, and the third organic layer 133 may be arranged in a first arrangement direction F1 and a second arrangement direction F2 so that the second organic layer 132 is located between two first organic layers 131, and the second organic layer 132 is located between two third organic layers 133.

[0067] The first organic layer 131, the second organic layer 132, and the third organic layer 133 may each be formed by depositing a deposition material onto the electrode substrate 105 through a through-hole in a mask in a deposition chamber in which the corresponding mask is installed. In the following description, layers formed on the electrode substrate 105 through the through-hole in the mask, such as the first organic layer 131, the second organic layer 132, and the third organic layer 133, are also referred to as first deposition layers and are denoted by the reference numeral 130. One first deposition layer 130 may constitute a unit structure such as one pixel of an organic EL display device.

[0068] The second electrode layer 141 may contain a conductive material such as a metal. Examples of materials that can be used to form the second electrode layer 141 include platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, chromium, carbon, and alloys thereof.

[0069] 1A and 1B, the second electrode layer 141 may extend across two adjacent first vapor deposition layers 130 in a plan view. The second electrode layer 141 may be formed by vapor deposition, similar to the first organic layer 131, the second organic layer 132, and the third organic layer 133. In the following description, a layer formed by vapor deposition so as to extend across multiple unit structures of the organic device 100, such as the second electrode layer 141, is also referred to as a second vapor deposition layer and is indicated by the reference numeral 140.

[0070] Although not shown, the second electrode layer 141 may be formed so that there is a gap between the second electrode layer 141 located on two adjacent organic layers 131, 132, and 133. Similar to the first organic layer 131, the second organic layer 132, and the third organic layer 133, such a second electrode layer 141 can be formed by depositing a vapor deposition material onto the electrode substrate 105 through through-holes in a mask. In this case, the second electrode layer 141 can be said to be a type of first vapor deposition layer 130.

[0071] 1B, the organic device 100 may include an encapsulation substrate 150 that covers elements on the substrate 110, such as the organic layers 131, 132, and 133, on the first surface 111 side of the substrate 110. The encapsulation substrate 150 can prevent water vapor and the like from outside the organic device 100 from entering the inside of the organic device 100. This can prevent the organic layers 131, 132, and 133 from deteriorating due to moisture. The encapsulation substrate 150 includes, for example, glass.

[0072] Although not shown, the organic device 100 may include a hole injection layer and a hole transport layer located between the first electrode layer 120 and the organic layers 131, 132, and 133. The organic device 100 may also include an electron transport layer and an electron injection layer located between the organic layers 131, 132, and 133 and the second electrode layer 141. The hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer may be a second vapor deposition layer 140 formed by a vapor deposition method so as to extend across multiple unit structures of the organic device 100. Alternatively, the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer may be a first vapor deposition layer 130, similar to the organic layers 131, 132, and 133.

[0073] In the method for manufacturing the organic device 100, an organic device group 102 as shown in FIG. 2 may be fabricated. The organic device group 102 includes two or more organic devices 100. For example, the organic device group 102 may include organic devices 100 aligned in a first direction D1 and a second direction D2. The two or more organic devices 100 may share a single substrate 110. For example, the organic device group 102 may be located on a single substrate 110 and include layers such as a first electrode layer 120, a first organic layer 131, a second organic layer 132, a third organic layer 133, and a second electrode layer 141 that constitute two or more organic devices 100. By dividing the organic device group 102, a single organic device 100 is obtained.

[0074] As will be described later, the first direction D1 may be a direction in which the masks 50 and 50A extend. As will be described later, the second direction D2 may be a direction in which two or more masks 50 and 50A are arranged side by side.

[0075] The dimension A1 of the organic device 100 in the first direction D1 may be, for example, 20 mm or more, 30 mm or more, or 50 mm or more. The dimension A1 may be, for example, 100 mm or less, 200 mm or less, or 300 mm or less. The range of the dimension A1 may be defined by a first group consisting of 20 mm, 30 mm, and 50 mm and / or a second group consisting of 100 mm, 200 mm, and 300 mm. The range of the dimension A1 may be defined by a combination of any one of the values ​​included in the first group described above with any one of the values ​​included in the second group described above. The range of the dimension A1 may be defined by a combination of any two of the values ​​included in the first group described above. The range of the dimension A1 may be defined by a combination of any two of the values ​​included in the second group described above. For example, it may be 20 mm or more and 300 mm or less, 20 mm or more and 200 mm or less, 20 mm or more and 100 mm or less, 20 mm or more and 50 mm or less, 20 mm or more and 30 mm or less, 30 mm or more and 300 mm or less, 30 mm or more and 200 mm or less, 30 mm or more and 100 mm or less, 30 mm or more and 50 mm or less, 50 mm or more and 300 mm or less, 50 mm or more and 200 mm or less, 50 mm or more and 100 mm or less, 100 mm or more and 300 mm or less, 100 mm or more and 200 mm or less, or 200 mm or more and 300 mm or less.

[0076] The dimension A2 of the organic device 100 in the second direction D2 may be, for example, 20 mm or more, 30 mm or more, or 50 mm or more. The dimension A2 may be, for example, 100 mm or less, 200 mm or less, or 300 mm or less. The range of the dimension A2 may be defined by a first group consisting of 20 mm, 30 mm, and 50 mm and / or a second group consisting of 100 mm, 200 mm, and 300 mm. The range of the dimension A2 may be defined by a combination of any one of the values ​​included in the first group described above with any one of the values ​​included in the second group described above. The range of the dimension A2 may be defined by a combination of any two of the values ​​included in the first group described above. The range of the dimension A2 may be defined by a combination of any two of the values ​​included in the second group described above. For example, it may be 20 mm or more and 300 mm or less, 20 mm or more and 200 mm or less, 20 mm or more and 100 mm or less, 20 mm or more and 50 mm or less, 20 mm or more and 30 mm or less, 30 mm or more and 300 mm or less, 30 mm or more and 200 mm or less, 30 mm or more and 100 mm or less, 30 mm or more and 50 mm or less, 50 mm or more and 300 mm or less, 50 mm or more and 200 mm or less, 50 mm or more and 100 mm or less, 100 mm or more and 300 mm or less, 100 mm or more and 200 mm or less, or 200 mm or more and 300 mm or less.

[0077] Next, a description will be given of a manufacturing apparatus 1 for manufacturing the organic device 100. Fig. 3 is a plan view showing an example of the manufacturing apparatus 1.

[0078] The manufacturing apparatus 1 may include a deposition chamber in which a material is deposited on the electrode substrate 105 through the through-holes in a mask in a vacuum atmosphere to form the first deposition layer 130. For example, as shown in FIG. 3 , the deposition chambers of the manufacturing apparatus 1 may include an eleventh deposition chamber 11 for forming the first organic layer 131, a twelfth deposition chamber 12 for forming the second organic layer 132, and a thirteenth deposition chamber 13 for forming the third organic layer 133. In the following description, the deposition chamber in which a material is deposited on the electrode substrate 105 through the through-holes in a mask to form the first deposition layer 130 will be referred to as the first deposition chamber and indicated by the reference numeral 10.

[0079] The manufacturing apparatus 1 may also include a deposition chamber in which a material is deposited on the electrode substrate 105 in a vacuum atmosphere to form the second deposition layer 140. For example, as shown in FIG. 3 , the deposition chambers of the manufacturing apparatus 1 may include a 21st deposition chamber 21 for forming a hole injection layer, a 22nd deposition chamber 22 for forming a hole transport layer, a 23rd deposition chamber 23 for forming an electron transport layer, a 24th deposition chamber 24 for forming an electron injection layer, and a 25th deposition chamber 25 for forming the second electrode layer 141. In the following description, the deposition chamber for forming the second deposition layer 140 is referred to as the second deposition chamber and is designated by the reference numeral 20. Note that if the hole injection layer, hole transport layer, electron transport layer, electron injection layer, second electrode layer 141, etc. are the first deposition layer 130 like the organic layers 131, 132, and 133, the deposition chamber for forming these layers may be the first deposition chamber 10 using a mask.

[0080] 3, the manufacturing apparatus 1 may include a substrate loading chamber 31 for loading a substrate 110 such as an electrode substrate 105 into the manufacturing apparatus 1. The manufacturing apparatus 1 may also include a substrate pretreatment chamber 32 for performing pretreatment such as cleaning on the electrode substrate 105. The manufacturing apparatus 1 may also include a mask stock chamber 33 for storing a mask device including a mask used in the first vapor deposition chamber 10. The manufacturing apparatus 1 may also include a sealing chamber 34 for combining a sealing substrate 150 with the substrate 110. The manufacturing apparatus 1 may also include a substrate unloading chamber 35 for unloading the substrate 110.

[0081] Within the manufacturing apparatus 1, the substrate 110 may be moved between chambers, such as deposition chambers, by a substrate transfer device, such as a robot arm.

[0082] Next, a description will be given of the first vapor deposition chamber 10. FIG.

[0083] As shown in FIG. 4, the first deposition chamber 10 may include therein a deposition source 6, a heater 8, and a mask device 15. The first deposition chamber 10 may further include an exhaust means for creating a vacuum atmosphere inside the first deposition chamber 10. The deposition source 6 is, for example, a crucible, and contains a deposition material 7 such as an organic light-emitting material. The heater 8 heats the deposition source 6 to evaporate the deposition material 7 under a vacuum atmosphere. The mask device 15 is disposed opposite the crucible 6.

[0084] As shown in Fig. 4, the mask device 15 includes at least one mask 50. The mask device 15 may include a mask support 40 that supports the mask 50. The mask support 40 may include a frame 41 that includes an opening 43. The mask 50 may be fixed to the frame 41 so as to cross the opening 43 in a plan view. The frame 41 may also support the mask 50 in a state where it is pulled in the plane direction so as to prevent the mask 50 from bending. The mask frame is also referred to as a frame.

[0085] As shown in FIG. 4 , the mask device 15 is disposed in the first deposition chamber 10 so that the mask 50 faces the substrate 110, which is an object to which the deposition material 7 is to be attached. The mask 50 includes a plurality of through holes 56 that allow the deposition material 7 coming from the deposition source 6 to pass through. In the following description, of the surfaces of the mask 50, the surface that faces the substrate 110 will be referred to as a first surface 551, and the surface that faces the opposite side of the first surface 551 will be referred to as a second surface 552. Furthermore, of the surfaces of the substrate 110, the surface that faces the mask device 15 will be referred to as a first surface 111, and the surface that faces the opposite side of the first surface 111 will be referred to as a second surface 112.

[0086] As shown in Fig. 4, the first deposition chamber 10 may include a substrate holder 2 that holds a substrate 110. The substrate holder 2 may be movable in the thickness direction of the substrate 110. The substrate holder 2 may also be movable in the surface direction of the substrate 110. The substrate holder 2 may also be configured to control the tilt of the substrate 110. For example, the substrate holder 2 may include multiple chucks attached to the outer edge of the substrate 110, and each chuck may be independently movable in the thickness direction or the surface direction of the substrate 110.

[0087] As shown in FIG. 4, the first deposition chamber 10 may include a mask holder 3 that holds a mask device 15. The mask holder 3 may be movable in the thickness direction of the mask 50. The mask holder 3 may also be movable in the surface direction of the mask 50. The mask holder 3 may also be configured to control the tilt of the mask 50. For example, the mask holder 3 may include multiple chucks attached to the outer edge of the frame 41, and each chuck may be independently movable in the thickness direction or the surface direction of the mask 50.

[0088] By moving at least one of the substrate holder 2 and the mask holder 3, the position of the mask 50 of the mask device 15 relative to the substrate 110 can be adjusted.

[0089] 4, the first deposition chamber 10 may include a cooling plate 4 arranged on a second surface 112 of the substrate 110, which is the surface opposite to the mask device 15. The cooling plate 4 may have a flow path for circulating a coolant inside the cooling plate 4. The cooling plate can suppress an increase in temperature of the substrate 110 during the deposition process.

[0090] As shown in FIG. 4 , the first deposition chamber 10 may include a magnet 5 disposed on a second surface 112 of the substrate 110, which is the surface opposite the mask device 15. As shown in FIG. 4 , the magnet 5 may also be disposed on the cooling plate 4 on the surface opposite the mask device 15. The magnet 5 can attract the mask 50 of the mask device 15 toward the substrate 110 by magnetic force. This can reduce or eliminate the gap between the mask 50 and the substrate 110. This can suppress the occurrence of shadows during the deposition process and improve the dimensional accuracy and positional accuracy of the first deposition layer 130. In this application, a shadow refers to a phenomenon in which the deposition material 7 enters the gap between the mask 50 and the substrate 110, resulting in an uneven thickness of the first deposition layer 130. Alternatively, the mask 50 may be attracted toward the substrate 110 using an electrostatic chuck that utilizes electrostatic force.

[0091] FIG. 5 is a plan view showing the mask device 15 as viewed from the first surface 551 side of the mask 50. As shown in FIG. 5, the mask device 15 may include a plurality of masks 50. In this embodiment, the shape of each mask 50 may be a rectangle extending in a first direction D1. In the mask device 15, the plurality of masks 50 are arranged in a direction intersecting the first direction D1, which is the longitudinal direction of the masks 50. As shown in FIG. 5, the plurality of masks 50 may be arranged in a second direction D2, which is the width direction of the masks 50 perpendicular to the longitudinal direction of the masks 50. Each mask 50 may be fixed to the frame 41 at both longitudinal ends of the mask 50 by, for example, welding.

[0092] The frame 41 may have a rectangular outline including a pair of first regions 411 extending in a first direction D1 and a pair of second regions 412 extending in a second direction D2. The first regions are also referred to as first sides, and the second regions are also referred to as second sides. As shown in FIG. 5 , the second sides 412 to which the ears 51 of the mask 50 are fixed may be longer than the first sides 411.

[0093] The mask device 15 may include a member fixed to the frame 41 and partially overlapping the mask 50 in the thickness direction of the mask 50. For example, as shown in FIG. 5, the mask device 15 may include a support member 42 that supports the mask 50 from below. The support member 42 may be in contact with the mask 50. Alternatively, the support member 42 may indirectly support the mask 50 from below via another member. Although not shown, the mask device 15 may include a member fixed to the frame 41 and overlapping the gap between two adjacent masks 50. A member, such as a support member, located in the opening 43 and connected to the frame 41 is also referred to as a crosspiece. In the example shown in FIG. 5, the crosspiece 42 includes a first crosspiece 421 connected to the first side 411. The first crosspiece 421 extends in a second direction D2 that intersects with the first direction D1.

[0094] As shown in FIG. 5, the mask 50 may have a pair of ears 51 overlapping the frame 41 and an intermediate portion 52 located between the ears 51. The ears are also referred to as end portions. The intermediate portion 52 may have at least one effective area 53 and a peripheral area 54 located around the effective area 53. In the example shown in FIG. 5, the intermediate portion 52 includes multiple effective areas 53 arranged at predetermined intervals along the first direction D1. The peripheral area 54 surrounds the multiple effective areas 53.

[0095] 6 is a plan view showing an example of the intermediate portion 52 of the mask 50. The effective area 53 of the intermediate portion 52 may include a plurality of through holes 56. The deposition material that passes through each through hole 56 of the intermediate portion 52 and adheres to the substrate 110 may form a first deposition layer 130 on the substrate 110. In this case, the effective area 53 includes a group of through holes 56 that are regularly arranged at a period corresponding to the first deposition layer 130 in a plan view.

[0096] 6, the peripheral region 54 may not include the through holes 56. Although not shown, the peripheral region 54 may include the through holes 56. In this case, the through holes 56 located in the peripheral region 54 may not be arranged periodically in a plan view. The through holes 56 located in the peripheral region 54 may be arranged regularly at a period that does not correspond to the period of the first vapor deposition layer 130.

[0097] When a display device such as an organic EL display device is fabricated using the mask 50, one effective area 53 corresponds to the display area of ​​one organic EL display device. Therefore, the mask device 15 shown in FIG. 5 allows for multi-surface deposition of an organic EL display device. Note that one effective area 53 may correspond to multiple display areas. Although not shown, multiple effective areas 53 may also be arranged at predetermined intervals in the width direction of the mask 50.

[0098] The effective area 53 may have a rectangular outline in a plan view. Alternatively, the effective area 53 may have an outline of various shapes depending on the shape of the display area of ​​the organic EL display device. For example, the effective area 53 may have a circular outline.

[0099] FIG. 7 is a cross-sectional view showing an example of a mask 50. As shown in FIG. 7, the mask 50 includes a metal plate 55 and a through-hole 56 penetrating from a first surface 551 to a second surface 552 of the metal plate 55. The through-hole 56 may include a first recess 561 located on the first surface 551 side of the metal plate 55 and a second recess 562 located on the second surface 552 side and connected to the first recess 561. The second recess 562 may have a dimension r2 larger than a dimension r1 of the first recess 561 in a plan view. The first recess 561 and the second recess 562 may be formed by processing the metal plate 55 from the first surface 551 side and the second surface 552 side by etching, laser, or the like.

[0100] The first recess 561 and the second recess 562 are connected via a circumferential connecting portion 563. The connecting portion 563 may define a through portion 564 in which the opening area of ​​the through hole 56 is minimized when the mask 50 is seen in a plan view.

[0101] The dimension r of the through portion 564 may be, for example, 10 μm or more, 15 μm or more, 20 μm or more, or 25 μm or more. The dimension r of the through portion 564 may be, for example, 40 μm or less, 45 μm or less, 50 μm or less, or 55 μm or less. The range of the dimension r of the through portion 564 may be defined by a first group consisting of 10 μm, 15 μm, 20 μm, and 25 μm, and / or a second group consisting of 40 μm, 45 μm, 50 μm, and 55 μm. The range of the dimension r of the through portion 564 may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the dimension r of the through portion 564 may be defined by a combination of any two of the values ​​included in the first group. The range of the dimension r of the through portion 564 may be determined by a combination of any two of the values ​​included in the second group described above.For example, it may be 10 μm or more and 55 μm or less, 10 μm or more and 50 μm or less, 10 μm or more and 45 μm or less, 10 μm or more and 40 μm or less, 10 μm or more and 25 μm or less, 10 μm or more and 20 μm or less, 10 μm or more and 15 μm or more and 15 μm or more and 55 μm or less, 15 μm or more and 50 μm or less, 15 μm or more and 45 μm or less, 15 μm or more and 40 μm or less, 15 μm or more and 25 μm or less, 15 μm or more and 20 μm or more and 55 μm or less. Alternatively, it may be 20 μm or more and 50 μm or less, 20 μm or more and 45 μm or less, 20 μm or more and 40 μm or less, 20 μm or more and 25 μm or less, 25 μm or more and 55 μm or less, 25 μm or more and 50 μm or less, 25 μm or more and 45 μm or less, 25 μm or more and 40 μm or less, 40 μm or more and 55 μm or less, 40 μm or more and 50 μm or less, 40 μm or more and 45 μm or less, 45 μm or more and 55 μm or less, 45 μm or more and 50 μm or less.

[0102] The dimension r of the through portion 564 can be determined by the light transmitted through the through hole 56. For example, parallel light is incident on one of the first surface 551 or the second surface 552 of the mask 50 along the normal direction of the mask 50, transmitted through the through hole 56, and emitted from the other of the first surface 551 or the second surface 552. The dimension of the area occupied by the emitted light in the surface direction of the mask 50 is then adopted as the dimension r of the through portion 564.

[0103] 7 shows an example in which the second surface 552 of the metal plate 55 remains between two adjacent second recesses 562, but the present invention is not limited to this. Although not shown, etching may be performed so that two adjacent second recesses 562 are connected. In other words, there may be a location between two adjacent second recesses 562 where the second surface 552 of the metal plate 55 does not remain.

[0104] Next, the materials of the mask 50 and the frame 41 of the mask device 15 will be described. The mask 50 and the frame 41 can be primarily made of an iron alloy containing nickel. The iron alloy may further contain cobalt in addition to nickel. For example, the metal plate 55 of the mask 50 can be made of an iron alloy containing nickel and cobalt in total at a content of 28% by mass or more and 54% by mass or less, and a cobalt content of 0% by mass or more and 6% by mass or less. This reduces the difference between the thermal expansion coefficients of the mask 50 and the frame 41 and the substrate 110 containing glass. This prevents the dimensional accuracy and positional accuracy of the first vapor deposition layer 130 formed on the substrate 110 from decreasing due to thermal expansion of the mask 50, the frame 41, the substrate 110, etc.

[0105] The total content of nickel and cobalt in the metal plate 55 may be 28% by mass or more and 38% by mass or less. In this case, specific examples of iron alloys containing nickel or nickel and cobalt include Invar, Super Invar, and Ultra Invar. Invar is an iron alloy containing 34% by mass or more and 38% by mass or less of nickel, with the balance being iron and unavoidable impurities. Super Invar is an iron alloy containing 30% by mass or more and 34% by mass or less of nickel, cobalt, and the balance being iron and unavoidable impurities. Ultra Invar is an iron alloy containing 28% by mass or more and 34% by mass or less of nickel, 2% by mass or more and 7% by mass or less of cobalt, 0.1% by mass or more and 1.0% by mass or less of manganese, 0.10% by mass or less of silicon, 0.01% by mass or less of carbon, and the balance being iron and unavoidable impurities.

[0106] The total content of nickel and cobalt in the metal plate 55 may be 38% by mass or more and 54% by mass or less. In this case, a specific example of the iron alloy containing nickel or nickel and cobalt is a low-thermal expansion Fe-Ni-based plated alloy. The low-thermal expansion Fe-Ni-based plated alloy is an iron alloy containing 38% by mass or more and 54% by mass or less of nickel, with the remainder being iron and unavoidable impurities.

[0107] If the temperatures of the mask 50, frame 41, and substrate 110 do not reach high temperatures during the vapor deposition process, there is no particular need to make the thermal expansion coefficients of the mask 50 and frame 41 equal to the thermal expansion coefficient of the substrate 110. In this case, materials other than the iron alloys described above may be used as the material for the mask 50. For example, iron alloys other than the nickel-containing iron alloys described above, such as iron alloys containing chromium, may be used. As the iron alloy containing chromium, for example, iron alloys known as stainless steel may be used. Furthermore, alloys other than iron alloys, such as nickel or nickel-cobalt alloys, may also be used.

[0108] The thickness T of the metal plate 55 of the mask 50 may be, for example, 8 μm or more, 10 μm or more, 13 μm or more, or 15 μm or more. The thickness T of the metal plate 55 may be, for example, 20 μm or less, 30 μm or less, 40 μm or less, or 50 μm or less. The range of the thickness T of the metal plate 55 may be determined by a first group consisting of 8 μm, 10 μm, 13 μm, and 15 μm, and / or a second group consisting of 20 μm, 30 μm, 40 μm, and 50 μm. The range of the thickness T of the metal plate 55 may be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the thickness T of the metal plate 55 may be determined by a combination of any two of the values ​​included in the first group. The range of the thickness T of the metal plate 55 may be determined by a combination of any two of the values ​​included in the second group. For example, it may be 8 μm or more and 50 μm or less, 8 μm or more and 40 μm or less, 8 μm or more and 30 μm or less, 8 μm or more and 20 μm or less, 8 μm or more and 15 μm or less, 8 μm or more and 13 μm or less, 8 μm or more and 10 μm or less, 10 μm or more and 50 μm or less, 10 μm or more and 40 μm or less, 10 μm or more and 30 μm or less, 10 μm or more and 20 μm or less, 10 μm or more and 15 μm or less, 10 μm or more and 13 μm or less, 13 μm or more and 50 μm or less, It may be 3 μm or more and 40 μm or less, 13 μm or more and 30 μm or less, 13 μm or more and 20 μm or less, 13 μm or more and 15 μm or less, 15 μm or more and 50 μm or less, 15 μm or more and 40 μm or less, 15 μm or more and 30 μm or less, 15 μm or more and 20 μm or less, 20 μm or more and 50 μm or less, 20 μm or more and 40 μm or less, 20 μm or more and 30 μm or less, 30 μm or more and 50 μm or less, 30 μm or more and 40 μm or less, or 40 μm or more and 50 μm or less.

[0109] By setting the thickness T of the metal plate 55 to 50 μm or less, it is possible to reduce the proportion of the vapor deposition material 7 that gets caught on the wall surfaces of the through-holes 56 before passing through the through-holes 56. This makes it possible to improve the utilization efficiency of the vapor deposition material 7. Furthermore, by setting the thickness T of the metal plate 55 to 8 μm or more, it is possible to ensure the strength of the mask 50 and prevent the mask 50 from being damaged or deformed.

[0110] A contact-type measurement method is used to measure the thickness of the metal plate 55. For the contact-type measurement method, a length gauge "MT1271" by HEIDENHAIM-METRO, manufactured by Heidenhain, equipped with a ball bush guide type plunger, is used.

[0111] Next, an example of a method for manufacturing the organic device 100 using the manufacturing apparatus 1 will be described.

[0112] First, the substrate 110 on which the first electrode layer 120 and the insulating layer 160 are formed is carried into the manufacturing apparatus 1 through the substrate carry-in chamber 31. Next, the substrate 110 may be subjected to pretreatment such as dry cleaning in the substrate pretreatment chamber 32. The dry cleaning may be, for example, ultraviolet irradiation treatment or plasma treatment. Also, a hole injection layer may be formed on the first electrode layer 120 in the 21st vapor deposition chamber 21. Also, a hole transport layer may be formed on the hole injection layer in the 22nd vapor deposition chamber 22.

[0113] Next, a vapor deposition process for forming the first organic layer 131 is carried out in the eleventh vapor deposition chamber 11. First, a mask device 15 including a mask 50 corresponding to the first organic layer 131 is prepared. Next, the mask device 15 is placed above the vapor deposition source 6 using the mask holder 3.

[0114] Furthermore, the substrate 110 is placed opposite the mask 50 of the mask device 15 using the substrate holder 2. The substrate holder 2 is moved in the surface direction of the substrate 110 to adjust the position of the substrate 110 relative to the mask 50. For example, the substrate 110 is moved in the surface direction so that the alignment mark of the mask 50 or the frame 41 and the alignment mark of the substrate 110 overlap. When adjusting the position of the substrate 110 in the surface direction, the first surface 111 of the substrate 110 does not need to be in contact with the first surface 551 of the mask 50. In this case, after adjusting the position of the substrate 110 in the surface direction, the substrate holder 2 is moved in the thickness direction of the substrate 110 to bring the first surface 111 of the substrate 110 into contact with the first surface 551 of the mask 50.

[0115] Subsequently, a step of moving the cooling plate 4 toward the substrate 110 and arranging the cooling plate 4 on the second surface 112 side of the substrate 110 may be performed. Also, a step of arranging the magnet 5 on the second surface 112 side of the substrate 110 may be performed. This allows the mask 50 to be attracted toward the substrate 110 by magnetic force.

[0116] Next, the deposition material 7 is evaporated and caused to fly to the substrate 110. A portion of the deposition material 7 that passes through the through-holes 56 of the mask 50 adheres to the substrate 110 in a pattern corresponding to the through-holes 56. In this way, the first organic layer 131 can be formed on the substrate 110.

[0117] Subsequently, a vapor deposition process for forming the second organic layer 132 may be performed in the twelfth vapor deposition chamber 12. Furthermore, a vapor deposition process for forming the third organic layer 133 may be performed in the thirteenth vapor deposition chamber 13. The vapor deposition processes for the second organic layer 132 and the third organic layer 133 are similar to the vapor deposition process for the first organic layer 131 described above, and therefore, description thereof will be omitted.

[0118] Subsequently, in the 23rd vapor deposition chamber 23, an electron transport layer may be formed on the organic layers 131, 132, and 133. Also, in the 24th vapor deposition chamber 24, an electron injection layer may be formed on the electron transport layer.

[0119] Next, the second electrode layer 141 is formed in the 25th vapor deposition chamber 25. Next, a sealing process is performed in the sealing chamber 34, in which a sealing substrate 150 is combined with the substrate 110. Thereafter, the substrate 110 is carried out from the manufacturing apparatus 1 to the outside via the substrate carry-out chamber 35. In this manner, the organic device 100 can be manufactured.

[0120] Thereafter, an inspection process of the organic device 100 may be carried out. For example, by applying a voltage between the first electrode layer 120 and the second electrode layer 141 of the organic device 100, it is possible to inspect whether layers such as the organic layers 131, 132, and 133 are properly formed. For example, if the organic layers 131, 132, and 133 are light-emitting layers, it is possible to determine whether the organic device 100 is a non-defective product based on whether each pixel including the organic layers 131, 132, and 133 properly emits light.

[0121] If the organic device 100 does not meet the desired specifications, it is necessary to investigate the cause. Factors that may affect the quality of the organic device 100 during the manufacturing process of the organic device 100 include, for example, the following. (1) Accuracy of the position of the first electrode layer 120 on the substrate 110 (2) Accuracy of the position of the through-hole 56 of the mask 50 of the mask device 15 (3) Accuracy of the relative position between the mask device 15 and the electrode substrate 105 (4) Thermal expansion of the substrate 110 during the deposition process (5) Thermal expansion of the mask device 15 during the deposition process (6) Deformation such as warpage occurring in the substrate 110 (7) Deformation such as warping occurring in the mask device 15

[0122] Factors (1), (4), and (6) are based on the characteristics of the electrode substrate 105 including the substrate 110 and the first electrode layer 120. Factors (2), (5), and (7) are based on the characteristics of the mask device 15. The relative position of the mask device 15 and the electrode substrate 105 in factor (3) is adjusted by, for example, moving the substrate holder 2 in the first deposition chamber 10 of the manufacturing apparatus 1. Therefore, factor (3) can be said to be based on the characteristics of the first deposition chamber 10.

[0123] In this embodiment, it is proposed to perform a deposition process in the first deposition chamber 10 of the manufacturing apparatus 1 using a standard substrate 60 and a standard mask device 15A, and to inspect whether the first deposition layer 130 is properly formed. Specifically, as shown in Fig. 8, in the first deposition chamber 10, a material is deposited on the standard substrate 60 through the through-holes 56 of the standard mask 50A of the standard mask device 15A to form the first deposition layer 130, and to inspect whether the position and dimensions of the first deposition layer 130 are proper.

[0124] The standard substrate 60 includes the substrate 110 and a pattern for verifying the positional and dimensional accuracy of the first deposition layer 130. The standard mask device 15A includes a frame 41 and a standard mask 50A held by the frame 41. The standard substrate 60 and standard mask device 15A are guaranteed to function properly in the deposition process. For example, a standard substrate 60 and standard mask device 15A that have been proven to form an appropriate first deposition layer 130 in a first deposition chamber 10 other than the first deposition chamber 10 being inspected are used. This reduces the possibility of defects in the position or dimension of the first deposition layer 130 due to the standard substrate 60 and standard mask device 15A. For example, it is possible to create a situation in which factors (1), (4), and (6) and factors (2), (5), and (7) of the above factors (1) to (7) can be ignored. Therefore, by performing the deposition process using the standard substrate 60 and standard mask device 15A, the characteristics of each first deposition chamber 10 included in the manufacturing apparatus 1 can be individually evaluated.

[0125] Next, a specific description will be given of the standard substrate 60. Fig. 9A is a plan view showing an example of the standard substrate 60. Note that, among the components of the standard substrate 60, the same parts as those of the electrode substrate 105 are given the same reference numerals, and detailed description thereof may be omitted.

[0126] The standard substrate 60 may include a substrate 110 and a standard mark area 62 located on a first surface 111 of the substrate 110. In Fig. 9A, reference numeral 50A indicates the outline of a standard mask 50A when the standard substrate 60 is combined with a standard mask device 15A. The standard substrate 60 may include two or more standard mark areas 62 aligned in a first direction D1, which is the direction in which the standard mask 50A extends.

[0127] 9A, the standard mark area 62 is preferably disposed over a wide area of ​​the substrate 110. In FIG. 9A, the area surrounded by a dashed line marked with the symbol R1 represents the range of the substrate 110 in which the standard mark area 62 exists. The range R1 in which the standard mark area 62 exists is defined by the largest rectangle that includes sides extending in the first direction D1 and the second direction D2 and is tangent to the standard mark area 62. The greater the ratio of the area of ​​the range R1 in which the standard mark area 62 exists to the area of ​​the substrate 110, the wider the area over which the characteristics of the first vapor deposition chamber 10 can be evaluated.

[0128] The ratio of the area of ​​the presence range R1 of the standard mark region 62 to the area of ​​the substrate 110 may be, for example, 0.50 or more, 0.70 or more, 0.75 or more, or 0.80 or more. Furthermore, the ratio of the area of ​​the presence range R1 of the standard mark region 62 to the area of ​​the substrate 110 may be, for example, 0.85 or less, 0.90 or less, 0.95 or less, or 0.98 or less. The range of the ratio of the area of ​​the presence range R1 of the standard mark region 62 to the area of ​​the substrate 110 may be defined by a first group consisting of 0.50, 0.70, 0.75, and 0.80, and / or a second group consisting of 0.85, 0.90, 0.95, and 0.98. The range of the ratio of the area of ​​the presence range R1 of the standard mark region 62 to the area of ​​the substrate 110 may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the ratio of the area of ​​the existence range R1 of the standard mark area 62 to the area of ​​the substrate 110 may be determined by a combination of any two of the values ​​included in the first group described above. The range of the ratio of the area of ​​the existence range R1 of the standard mark area 62 to the area of ​​the substrate 110 may be determined by a combination of any two of the values ​​included in the second group described above.For example, it may be 0.50 or more and 0.98 or less, 0.50 or more and 0.95 or less, 0.50 or more and 0.90 or less, 0.50 or more and 0.85 or less, 0.50 or more and 0.80 or less, 0.50 or more and 0.75 or less, 0.50 or more and 0.70 or less, 0.70 or more and 0.98 or less, 0.70 or more and 0.95 or less, 0.70 or more and 0.90 or less, 0.70 or more and 0.85 or less, 0.70 or more and 0.80 or less, 0.70 or more and 0.75 or less, or 0.75 or more and 0.98 or less. Alternatively, it may be 0.75 or more and 0.95 or less, 0.75 or more and 0.90 or less, 0.75 or more and 0.85 or less, 0.75 or more and 0.80 or less, 0.80 or more and 0.98 or less, 0.80 or more and 0.95 or less, 0.80 or more and 0.90 or less, 0.80 or more and 0.85 or less, 0.85 or more and 0.98 or less, 0.85 or more and 0.95 or less, 0.85 or more and 0.90 or less, 0.90 or more and 0.98 or less, 0.90 or more and 0.95 or less, or 0.95 or more and 0.98 or less.

[0129] 9A, the standard substrate 60 may include an alignment mark 68. The alignment mark 68 can be used to adjust the position of the substrate 110 of the standard substrate 60 relative to the standard mask device 15A. The alignment mark 68 of the standard substrate 60 may be located outside the existence range R1 of the standard mark area 62.

[0130] 9B is a plan view showing an example of the relationship between the standard substrate 60 and the device space 103. The device space 103 is a space that overlaps with the organic device 100 manufactured in the first deposition chamber 10 in the normal direction of the first surface 551 of the mask 50. In FIG. 9B, the dotted line labeled 103 represents the outline of the device space 103 projected onto the standard substrate 60.

[0131] 9B, the standard mark area 62 may be located in the device space 103. This allows the characteristics of the first vapor deposition chamber 10 in the device space 103 to be evaluated.

[0132] 9B, symbol V1 represents the distance between two standard mark regions 62 in the first direction D1 (hereinafter also referred to as the first distance). The first distance V1 may be smaller than the dimension A1 of the organic device 100 in the first direction D1. For example, V1 / A1, which is the ratio of the first distance V1 to the dimension A1, may be 0.9 or less, 0.8 or less, or 0.7 or less. This makes it easier for the standard mark region 62 to overlap the device space 103 in the first direction D1.

[0133] The first interval V1 may be, for example, 10 mm or more, 15 mm or more, or 25 mm or more. The first interval V1 may be, for example, 50 mm or less, 100 mm or less, or 150 mm or less. The range of the first interval V1 may be defined by a first group consisting of 10 mm, 15 mm, and 25 mm, and / or a second group consisting of 50 mm, 100 mm, and 150 mm. The range of the first interval V1 may be defined by a combination of any one of the values ​​included in the first group described above with any one of the values ​​included in the second group described above. The range of the first interval V1 may be defined by a combination of any two of the values ​​included in the first group described above. The range of the first interval V1 may be defined by a combination of any two of the values ​​included in the second group described above. For example, it may be 10 mm or more and 150 mm or less, 10 mm or more and 100 mm or less, 10 mm or more and 50 mm or less, 10 mm or more and 25 mm or less, 10 mm or more and 15 mm or less, 15 mm or more and 150 mm or less, 15 mm or more and 100 mm or less, 15 mm or more and 50 mm or less, 15 mm or more and 25 mm or less, 25 mm or more and 150 mm or less, 25 mm or more and 100 mm or less, 25 mm or more and 50 mm or less, 50 mm or more and 150 mm or less, 50 mm or more and 100 mm or less, or 100 mm or more and 150 mm or less.

[0134] 9B, symbol U1 represents the dimension of the standard mark area 62 in the first direction D1 (hereinafter also referred to as the first dimension). It is preferable that the ratio of the first dimension U1 to the first distance V1 be equal to or greater than a certain value. This makes it easier for the standard mark area 62 to overlap the device space 103 in the first direction D1.

[0135] The ratio U1 / V1 of the first dimension U1 to the first spacing V1 may be, for example, 0.005 or more, 0.1 or more, 0.2 or more, or 0.3 or more. U1 / V1 may be, for example, 0.5 or less, 0.6 or less, 0.8 or less, or 1.0 or less. The range of U1 / V1 may be defined by a first group consisting of 0.005, 0.1, 0.2, and 0.3, and / or a second group consisting of 0.5, 0.6, 0.8, and 1.0. The range of U1 / V1 may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of U1 / V1 may be defined by a combination of any two of the values ​​included in the first group. The range of U1 / V1 may be defined by a combination of any two of the values ​​included in the second group. For example, it may be 0.005 or more and 1.0 or less, 0.005 or more and 0.8 or less, 0.005 or more and 0.6 or less, 0.005 or more and 0.5 or less, 0.005 or more and 0.3 or less, 0.005 or more and 0.2 or less, 0.005 or more and 0.1 or less, 0.1 or more and 1.0 or less, 0.1 or more and 0.8 or less, 0.1 or more and 0.6 or less, 0.1 or more and 0.5 or less, 0.1 or more and 0.3 or less, 0.1 or more and 0.2 or less, or 0.2 or more and 1. It may be 0.0 or less, 0.2 to 0.8 or less, 0.2 to 0.6 or less, 0.2 to 0.5 or less, 0.2 to 0.3 or less, 0.3 to 1.0 or less, 0.3 to 0.8 or less, 0.3 to 0.6 or less, 0.3 to 0.5 or less, 0.5 to 1.0 or less, 0.5 to 0.8 or less, 0.5 to 0.6 or less, 0.6 to 1.0 or less, 0.6 to 0.8 or less, 0.8 to 1.0 or less.

[0136] 9B, the symbol V2 represents the distance between two standard mark regions 62 in the second direction D2 (hereinafter also referred to as the second distance). The second distance V2 may be smaller than the dimension A2 of the organic device 100 in the second direction D2. For example, V2 / A2, which is the ratio of the second distance V2 to the dimension A2, may be 0.9 or less, 0.8 or less, or 0.7 or less. This makes it easier for the standard mark region 62 to overlap the device space 103 in the second direction D2.

[0137] The second interval V2 may be, for example, 10 mm or more, 15 mm or more, or 25 mm or more. The second interval V2 may be, for example, 50 mm or less, 100 mm or less, or 150 mm or less. The range of the second interval V2 may be determined by a first group consisting of 10 mm, 15 mm, and 25 mm, and / or a second group consisting of 50 mm, 100 mm, and 150 mm. The range of the second interval V2 may be determined by a combination of any one of the values ​​included in the first group described above with any one of the values ​​included in the second group described above. The range of the second interval V2 may be determined by a combination of any two of the values ​​included in the first group described above. The range of the second interval V2 may be determined by a combination of any two of the values ​​included in the second group described above. For example, it may be 10 mm or more and 150 mm or less, 10 mm or more and 100 mm or less, 10 mm or more and 50 mm or less, 10 mm or more and 25 mm or less, 10 mm or more and 15 mm or less, 15 mm or more and 150 mm or less, 15 mm or more and 100 mm or less, 15 mm or more and 50 mm or less, 15 mm or more and 25 mm or less, 25 mm or more and 150 mm or less, 25 mm or more and 100 mm or less, 25 mm or more and 50 mm or less, 50 mm or more and 150 mm or less, 50 mm or more and 100 mm or less, or 100 mm or more and 150 mm or less.

[0138] 9B, the symbol U2 represents the dimension of the standard mark area 62 in the second direction D2 (hereinafter also referred to as the second dimension). It is preferable that the ratio of the second dimension U2 to the second distance V2 be equal to or greater than a certain value. This makes it easier for the standard mark area 62 to overlap the device space 103 in the second direction D2.

[0139] The ratio U2 / V2 of the second dimension U2 to the second spacing V2 may be, for example, 0.005 or more, 0.1 or more, 0.2 or more, or 0.3 or more. U2 / V2 may be, for example, 0.5 or less, 0.6 or less, 0.8 or less, or 1.0 or less. The range of U2 / V2 may be defined by a first group consisting of 0.005, 0.1, 0.2, and 0.3, and / or a second group consisting of 0.5, 0.6, 0.8, and 1.0. The range of U2 / V2 may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of U2 / V2 may be defined by a combination of any two of the values ​​included in the first group. The range of U2 / V2 may be defined by a combination of any two of the values ​​included in the second group. For example, it may be 0.005 or more and 1.0 or less, 0.005 or more and 0.8 or less, 0.005 or more and 0.6 or less, 0.005 or more and 0.5 or less, 0.005 or more and 0.3 or less, 0.005 or more and 0.2 or less, 0.005 or more and 0.1 or less, 0.1 or more and 1.0 or less, 0.1 or more and 0.8 or less, 0.1 or more and 0.6 or less, 0.1 or more and 0.5 or less, 0.1 or more and 0.3 or less, 0.1 or more and 0.2 or less, or 0.2 or more and 1. It may be 0.0 or less, 0.2 to 0.8 or less, 0.2 to 0.6 or less, 0.2 to 0.5 or less, 0.2 to 0.3 or less, 0.3 to 1.0 or less, 0.3 to 0.8 or less, 0.3 to 0.6 or less, 0.3 to 0.5 or less, 0.5 to 1.0 or less, 0.5 to 0.8 or less, 0.5 to 0.6 or less, 0.6 to 1.0 or less, 0.6 to 0.8 or less, 0.8 to 1.0 or less.

[0140] The substrate 110 may include an insulator such as glass. The thickness of the substrate 110 may be, for example, 0.1 mm or more, 0.3 mm or more, 0.4 mm or more, or 0.5 mm or more. The thickness of the substrate 110 may be, for example, 0.6 mm or less, 0.8 mm or less, 1.0 mm or less, or 2.0 mm or less. The thickness range of the substrate 110 may be defined by a first group consisting of 0.1 mm, 0.3 mm, 0.4 mm, and 0.5 mm, and / or a second group consisting of 0.6 mm, 0.8 mm, 1.0 mm, and 2.0 mm. The thickness range of the substrate 110 may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The thickness range of the substrate 110 may be defined by a combination of any two of the values ​​included in the first group. The thickness range of the substrate 110 may be defined by a combination of any two of the values ​​included in the second group mentioned above.For example, it may be 0.1 mm or more and 2.0 mm or less, 0.1 mm or more and 1.0 mm or less, 0.1 mm or more and 0.8 mm or less, 0.1 mm or more and 0.6 mm or less, 0.1 mm or more and 0.5 mm or less, 0.1 mm or more and 0.4 mm or less, 0.1 mm or more and 0.3 mm or less, 0.3 mm or more and 2.0 mm or less, 0.3 mm or more and 1.0 mm or less, 0.3 mm or more and 0.8 mm or less, 0.3 mm or more and 0.6 mm or less, 0.3 mm or more and 0.5 mm or less, 0.3 mm or more and 0.4 mm or less, or 0.4 mm or more and 2.0 mm or less. Alternatively, the thickness may be 0.4 mm or more and 1.0 mm or less, 0.4 mm or more and 0.8 mm or less, 0.4 mm or more and 0.6 mm or less, 0.4 mm or more and 0.5 mm or less, 0.5 mm or more and 2.0 mm or less, 0.5 mm or more and 1.0 mm or less, 0.5 mm or more and 0.8 mm or less, 0.5 mm or more and 0.6 mm or less, 0.6 mm or more and 2.0 mm or less, 0.6 mm or more and 1.0 mm or less, 0.6 mm or more and 0.8 mm or less, 0.8 mm or more and 2.0 mm or less, 0.8 mm or more and 1.0 mm or less, or 1.0 mm or more and 2.0 mm or less.

[0141] FIG. 10 is an enlarged plan view of the region of the standard substrate 60 in FIG. 9A surrounded by a dashed line marked with the symbol X. The standard mark region 62 includes at least one standard mark 63. The standard mark 63 indicates the region where the first deposition layer 130 is to be formed during the deposition process. As shown in FIG. 10, the standard mark region 62 may include multiple standard marks 63. Alternatively, the multiple standard marks 63 may be periodically arranged at regular intervals. For example, as shown in FIG. 10, the standard marks 63 may be arranged with an arrangement period P1 in one direction and with an arrangement period P2 in the other direction. The arrangement period P1 may be aligned in a first direction D1, which is the longitudinal direction of the standard mask 50A. The arrangement period P2 may be aligned in a second direction D2, which is the width direction of the standard mask 50A.

[0142] The arrangement period of the standard marks 63, such as the arrangement periods P1 and P2, may be the same as the arrangement period of the through holes 56 of the mask 50 used in manufacturing the organic device 100. The arrangement period of the standard marks 63 may be, for example, 30 μm or more, 50 μm or more, 70 μm or more, or 100 μm or more. The arrangement period of the standard marks 63 may be, for example, 150 μm or less, 200 μm or less, 300 μm or less, or 400 μm or less. The range of the arrangement period of the standard marks 63 may be determined by a first group consisting of 30 μm, 50 μm, 70 μm, and 100 μm, and / or a second group consisting of 150 μm, 200 μm, 300 μm, and 400 μm. The range of the arrangement period of the standard marks 63 may be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the arrangement period of the standard marks 63 may be determined by a combination of any two of the values ​​included in the first group described above. The range of the arrangement period of the standard marks 63 may be determined by a combination of any two of the values ​​included in the second group described above.For example, it may be 30 μm or more and 400 μm or less, 30 μm or more and 300 μm or less, 30 μm or more and 200 μm or less, 30 μm or more and 150 μm or less, 30 μm or more and 100 μm or less, 30 μm or more and 70 μm or less, 30 μm or more and 50 μm or less, 50 μm or more and 400 μm or less, 50 μm or more and 300 μm or less, 50 μm or more and 200 μm or less, 50 μm or more and 150 μm or less, 50 μm or more and 100 μm or less, 50 μm or more and 70 μm or more and 70 μm or more and 400 μm or less, 70 μm or more and 70 μm or more. It may be 70 μm or more and 200 μm or less, 70 μm or more and 150 μm or less, 70 μm or more and 100 μm or less, 100 μm or more and 400 μm or less, 100 μm or more and 300 μm or less, 100 μm or more and 200 μm or less, 100 μm or more and 150 μm or less, 150 μm or more and 400 μm or less, 150 μm or more and 300 μm or less, 150 μm or more and 200 μm or less, 200 μm or more and 400 μm or less, 200 μm or more and 300 μm or more and 400 μm or less.

[0143] 10 , the above-mentioned first dimension U1 may be the dimension in the first direction D1 of the area in which the groups of standard marks 63 are located. The above-mentioned first interval V1 may be the interval in the first direction D1 between two groups of standard marks 63. The above-mentioned second dimension U2 may be the dimension in the second direction D2 of the area in which the groups of standard marks 63 are located. The above-mentioned second interval V2 may be the interval in the second direction D2 between two groups of standard marks 63.

[0144] 10 , the standard mark 63 may include a first mark 64. The first mark 64 indicates the outer edge of the area where the first deposition layer 130 is to be formed. The outer edge of the first mark 64 in plan view may have a shape corresponding to the through-hole 56 of the standard mask 50A. For example, the outer edge of the first mark 64 in plan view may have a rectangular or circular shape.

[0145] 10, the standard mark 63 may include a second mark 65 located more inward than the first mark 64. The second mark 65 indicates the minimum allowable size of the first deposited layer 130. The second mark 65 may have a shape similar to that of the first mark 64.

[0146] 11A and 11B are a plan view and a cross-sectional view showing an enlarged example of a standard mark 63. The shape of the first mark 64 may be defined by a linear element having a first width W1. Similarly, the shape of the second mark 65 may be defined by a linear element having a second width W2. The first width W1 and the second width W2 may be the same or different.

[0147] 11A and 11B, the symbol M3 represents the dimension of the second mark 65 in the arrangement direction of the standard marks 63. Furthermore, the symbol M4 represents the shortest distance between the first outer edge 641 of the first mark 64 and the second outer edge 651 of the second mark 65 in a planar view. The dimension M3 of the standard mark 63 may correspond to the dimension M1 of the region of the first electrode layer 120 that does not overlap with the insulating layer 160, as shown in FIG. 1B. Furthermore, the shortest distance M4 may correspond to the dimension M2 of the insulating layer 160 in the arrangement direction of the first vapor deposition layer 130, as shown in FIG. 1B.

[0148] 1B is determined based on, for example, the tolerance for misalignment of the first deposited layer 130. When the pixel density of the organic device 100 is constant, the smaller the dimension M2, the larger the areas of the first electrode layer 120 and the first deposited layer 130. This increases the driving efficiency of the organic device 100 and extends the life of the organic device 100.

[0149] 11A and 11B may be determined based on a tolerance for misalignment of the first deposition layer 130 that may occur throughout the entire manufacturing process of the organic device 100. Alternatively, the minimum distance M4 may be determined based on a tolerance for misalignment of the first deposition layer 130 due to the deposition process in the first deposition chamber 10. The minimum distance M4 may be, for example, 0.5 μm or more, 1.0 μm or more, 1.5 μm or more, or 2.0 μm or more. Alternatively, the minimum distance M4 may be, for example, 3.0 μm or less, 5.0 μm or less, 7.0 μm or less, or 9.0 μm or less. The range of the minimum distance M4 may be defined by a first group consisting of 0.5 μm, 1.0 μm, 1.5 μm, and 2.0 μm, and / or a second group consisting of 3.0 μm, 5.0 μm, 7.0 μm, and 9.0 μm. The range of the shortest distance M4 may be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the shortest distance M4 may be determined by a combination of any two of the values ​​included in the first group. The range of the shortest distance M4 may be determined by a combination of any two of the values ​​included in the second group.For example, it may be 0.5 μm or more and 9.0 μm or less, 0.5 μm or more and 7.0 μm or less, 0.5 μm or more and 5.0 μm or less, 0.5 μm or more and 3.0 μm or less, 0.5 μm or more and 2.0 μm or less, 0.5 μm or more and 1.5 μm or less, 0.5 μm or more and 1.0 μm or less, 1.0 μm or more and 9.0 μm or less, 1.0 μm or more and 7.0 μm or less, 1.0 μm or more and 5.0 μm or less, 1.0 μm or more and 3.0 μm or less, 1.0 μm or more and 2.0 μm or less, 1.0 μm or more and 1.5 μm or less, or 1.5 μm or more and 9.0 μm or less. Alternatively, it may be 1.5 μm or more and 7.0 μm or less, 1.5 μm or more and 5.0 μm or less, 1.5 μm or more and 3.0 μm or less, 1.5 μm or more and 2.0 μm or less, 2.0 μm or more and 9.0 μm or less, 2.0 μm or more and 7.0 μm or less, 2.0 μm or more and 5.0 μm or less, 2.0 μm or more and 3.0 μm or less, 3.0 μm or more and 9.0 μm or less, 3.0 μm or more and 7.0 μm or less, 3.0 μm or more and 5.0 μm or less, 5.0 μm or more and 9.0 μm or less, 5.0 μm or more and 7.0 μm or less, or 7.0 μm or more and 9.0 μm or less.

[0150] Fig. 12 is a plan view showing another example of the standard mark area 62. As shown in Fig. 12, the standard mark area 62 may include only one standard mark 63. For example, the standard mark area 62 may include one first mark 64 and one second mark 65 located more inward than the first mark 64.

[0151] 12, an element labeled with the reference numeral 130 represents a first deposition layer formed on the standard substrate 60 by a deposition process using the standard mask 50A. As shown in FIG. 12, two or more first deposition layers 130 may be located inside one standard mark 63. That is, the standard mask 50A may be configured so that two or more through holes 56 overlap the area of ​​one standard mark 63. Although not shown, even in a configuration in which the standard mark area 62 includes two or more standard marks 63, the standard mask 50A may be configured so that two or more through holes 56 overlap the area of ​​one standard mark 63.

[0152] The material constituting the reference mark 63 is arbitrary as long as it allows observation of the positional relationship between the reference mark 63 and the first vapor deposition layer 130. For example, like the first electrode layer 120 and the second electrode layer 141, the reference mark 63 may contain a conductive material such as a metal, a conductive metal oxide, or another inorganic material. The reference mark 63 may also contain a resin material such as an acrylic resin. For example, the reference mark 63 may contain a photosensitive resin material used as a resist.

[0153] The reference mark 63 may also have a light-blocking property. For example, the reference mark 63 may contain a resin material and a coloring material. Examples of the coloring material that can be used include carbon black and titanium black.

[0154] When the reference mark 63 has light-shielding properties, the total light transmittance of the region of the reference substrate 60 overlapping with the reference mark 63 in a planar view may be, for example, 0% or more, 1% or more, 2% or more, or 3% or more. The total light transmittance may be, for example, 5% or less, 10% or less, 20% or less, or 30% or less. The range of the total light transmittance may be determined by a first group consisting of 0%, 1%, 2%, and 3% and / or a second group consisting of 5%, 10%, 20%, and 30%. The range of the total light transmittance may be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the total light transmittance may be determined by a combination of any two of the values ​​included in the first group. The range of the total light transmittance may be determined by a combination of any two of the values ​​included in the second group. For example, it may be 0% or more and 30% or less, 0% or more and 20% or less, 0% or more and 10% or less, 0% or more and 5% or less, 0% or more and 3% or less, 0% or more and 2% or less, 0% or more and 1% or less, 1% or more and 30% or less, 1% or more and 20% or less, 1% or more and 10% or less, 1% or more and 5% or less, 1% or more and 3% or less, 1% or more and 2% or less, 2% or more and 30% or less, 2 The total light transmittance may be 2% or more and 20% or less, 2% or more and 10% or less, 2% or more and 5% or less, 2% or more and 3% or less, 3% or more and 30% or less, 3% or more and 20% or less, 3% or more and 10% or less, 3% or more and 5% or less, 5% or more and 30% or less, 5% or more and 20% or less, 5% or more and 10% or less, 10% or more and 30% or less, 10% or more and 20% or less, or 20% or more and 30% or less. The total light transmittance is measured by a method conforming to JIS K7361-1:1997. The total light transmittance is measured using an Olympus Corporation spectrometer OSP-SMU.

[0155] The thickness of the reference mark 63 preferably corresponds to the distance from the surface of the organic device 100 on which the first vapor deposition layer 130 is formed to the first surface 111 of the substrate 110. In the organic device 100, the surface on which the first vapor deposition layer 130 is formed is, for example, the surface of the hole transport layer. The thickness of the reference mark 63 may be, for example, 0.01 μm or more, 0.05 μm or more, 0.08 μm or more, or 0.10 μm or more. Furthermore, the thickness of the reference mark 63 may be, for example, 0.15 μm or less, 0.20 μm or less, 0.50 μm or less, or 1.00 μm or less. The range of thicknesses of the standard mark 63 may be defined by a first group consisting of 0.01 μm, 0.05 μm, 0.08 μm, and 0.10 μm, and / or a second group consisting of 0.15 μm, 0.20 μm, 0.50 μm, and 1.00 μm. The range of thicknesses of the standard mark 63 may be defined by a combination of any one of the values ​​included in the first group described above with any one of the values ​​included in the second group described above. The range of thicknesses of the standard mark 63 may be defined by a combination of any two of the values ​​included in the first group described above. The range of thicknesses of the standard mark 63 may be defined by a combination of any two of the values ​​included in the second group described above.For example, it may be 0.01 μm or more and 1.00 μm or less, 0.01 μm or more and 0.50 μm or less, 0.01 μm or more and 0.20 μm or less, 0.01 μm or more and 0.15 μm or less, 0.01 μm or more and 0.10 μm or less, 0.01 μm or more and 0.08 μm or less, 0.01 μm or more and 0.05 μm or less, 0.05 μm or more and 1.00 μm or less, 0.05 μm or more and 0.50 μm or less, 0.05 μm or more and 0.20 μm or less, 0.05 μm or more and 0.15 μm or less, 0.05 μm or more and 0.10 μm or less, 0.05 μm or more and 0.08 μm or less, or 0.08 μm or more and 1.00 μm or less. Alternatively, the thickness may be 0.08 μm or more and 0.50 μm or less, 0.08 μm or more and 0.20 μm or less, 0.08 μm or more and 0.15 μm or less, 0.08 μm or more and 0.10 μm or less, 0.10 μm or more and 1.00 μm or less, 0.10 μm or more and 0.50 μm or less, 0.10 μm or more and 0.20 μm or less, 0.10 μm or more and 0.15 μm or less, 0.15 μm or more and 1.00 μm or less, 0.15 μm or more and 0.50 μm or less, 0.15 μm or more and 0.20 μm or less, 0.20 μm or more and 1.00 μm or less, 0.20 μm or more and 0.50 μm or less, or 0.50 μm or more and 1.00 μm or less.

[0156] Next, the standard mask device 15A will be described in detail. Fig. 13A is a plan view showing an example of the standard mask device 15A. Note that, among the components of the standard mask device 15A, the same parts as those of the mask device 15 will be given the same reference numerals, and detailed description thereof may be omitted.

[0157] The standard mask device 15A includes at least one standard mask 50A. It includes a metal plate 55 and a through-hole 56 that penetrates from a first surface 551 to a second surface 552 of the metal plate 55. The standard mask device 15A may also include a frame 41 that supports the standard mask 50A. The frame 41 supports the standard mask 50A in a state where it is pulled in the planar direction so as to prevent the standard mask 50A from bending. Similarly to the mask 50, the standard mask 50A may also have a pair of end portions 51 that overlap the frame 41 and a middle portion 52A located between the end portions 51.

[0158] The standard mask 50A of the standard mask device 15A may be arranged in the same manner as the mask 50 of the mask device 15. For example, the standard mask device 15A may include multiple standard masks 50A. As shown in FIG. 13A, each standard mask 50A may have a rectangular shape extending in a first direction D1. In the mask device 15, the multiple standard masks 50A are arranged in a direction intersecting the first direction D1, which is the longitudinal direction of the standard mask 50A. As shown in FIG. 13A, the multiple standard masks 50A may be arranged in a second direction D2, which is the width direction of the standard mask 50A perpendicular to the longitudinal direction of the standard mask 50A. Each standard mask 50A may be fixed to the frame 41 at both longitudinal ends of the standard mask 50A by, for example, welding.

[0159] 13A, the standard mask 50A may include two or more standard regions 58 aligned in the first direction D1. The standard regions 58 may include through holes 56 facing the standard marks 63 in the standard mark regions 62 of the standard substrate 60.

[0160] Fig. 13B is a plan view showing an example of the relationship between the standard mask device 15A and the device space 103. In Fig. 13B, the dotted line labeled 103 represents the outline of the device space 103 projected onto the standard mask 50A.

[0161] 13B, the standard region 58 may be located in the device space 103. This allows the characteristics of the first deposition chamber 10 in the device space 103 to be evaluated.

[0162] In FIG. 13B, the symbol V3 denotes the distance between two standard regions 58 in the first direction D1 (hereinafter also referred to as the third distance). The third distance V3 may be smaller than the dimension A1 of the organic device 100 in the first direction D1. For example, V3 / A1, which is the ratio of the third distance V3 to the dimension A1, may be 0.9 or less, 0.8 or less, or 0.7 or less. This makes it easier for the standard regions 58 to overlap the device space 103 in the first direction D1. As shown in FIG. 13B, the third distance V3 may be the distance between two standard regions 58 included in one standard mask 50A. Although not shown, the third distance V3 may also be the distance between the standard region 58 of the first standard mask 50A and the standard region 58 of the second standard mask 50A adjacent to the first standard mask 50A in the first direction D1.

[0163] The third interval V3 may be, for example, 10 mm or more, 15 mm or more, or 25 mm or more. The third interval V3 may be, for example, 50 mm or less, 100 mm or less, or 150 mm or less. The range of the third interval V3 may be determined by a first group consisting of 10 mm, 15 mm, and 25 mm and / or a second group consisting of 50 mm, 100 mm, and 150 mm. The range of the third interval V3 may be determined by a combination of any one of the values ​​included in the first group described above with any one of the values ​​included in the second group described above. The range of the third interval V3 may be determined by a combination of any two of the values ​​included in the first group described above. The range of the third interval V3 may be determined by a combination of any two of the values ​​included in the second group described above. For example, it may be 10 mm or more and 150 mm or less, 10 mm or more and 100 mm or less, 10 mm or more and 50 mm or less, 10 mm or more and 25 mm or less, 10 mm or more and 15 mm or less, 15 mm or more and 150 mm or less, 15 mm or more and 100 mm or less, 15 mm or more and 50 mm or less, 15 mm or more and 25 mm or less, 25 mm or more and 150 mm or less, 25 mm or more and 100 mm or less, 25 mm or more and 50 mm or less, 50 mm or more and 150 mm or less, 50 mm or more and 100 mm or less, or 100 mm or more and 150 mm or less.

[0164] 13B, the symbol U3 denotes the dimension of the standard region 58 in the first direction D1 (hereinafter also referred to as the third dimension). It is preferable that the ratio of the third dimension U3 to the third distance V3 be equal to or greater than a certain value. This makes it easier for the standard region 58 to overlap the device space 103 in the first direction D1.

[0165] The ratio U3 / V3 of the third dimension U3 to the third spacing V3 may be, for example, 0.005 or more, 0.1 or more, 0.2 or more, or 0.3 or more. U3 / V3 may be, for example, 0.5 or less, 0.6 or less, 0.8 or less, or 1.0 or less. The range of U3 / V3 may be defined by a first group consisting of 0.005, 0.1, 0.2, and 0.3, and / or a second group consisting of 0.5, 0.6, 0.8, and 1.0. The range of U3 / V3 may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of U3 / V3 may be defined by a combination of any two of the values ​​included in the first group. The range of U3 / V3 may be defined by a combination of any two of the values ​​included in the second group. For example, it may be 0.005 or more and 1.0 or less, 0.005 or more and 0.8 or less, 0.005 or more and 0.6 or less, 0.005 or more and 0.5 or less, 0.005 or more and 0.3 or less, 0.005 or more and 0.2 or less, 0.005 or more and 0.1 or less, 0.1 or more and 1.0 or less, 0.1 or more and 0.8 or less, 0.1 or more and 0.6 or less, 0.1 or more and 0.5 or less, 0.1 or more and 0.3 or less, 0.1 or more and 0.2 or less, or 0.2 or more and 1. It may be 0.0 or less, 0.2 to 0.8 or less, 0.2 to 0.6 or less, 0.2 to 0.5 or less, 0.2 to 0.3 or less, 0.3 to 1.0 or less, 0.3 to 0.8 or less, 0.3 to 0.6 or less, 0.3 to 0.5 or less, 0.5 to 1.0 or less, 0.5 to 0.8 or less, 0.5 to 0.6 or less, 0.6 to 1.0 or less, 0.6 to 0.8 or less, 0.8 to 1.0 or less.

[0166] In FIG. 13B, symbol V4 denotes the distance between two standard regions 58 in the second direction D2 (hereinafter also referred to as the fourth distance). The fourth distance V4 may be smaller than the dimension A2 of the organic device 100 in the second direction D2. For example, V4 / A2, which is the ratio of the fourth distance V4 to the dimension A2, may be 0.9 or less, 0.8 or less, or 0.7 or less. This makes it easier for the standard regions 58 to overlap the device space 103 in the second direction D2. As shown in FIG. 13B, the fourth distance V4 may be the distance between the standard region 58 of the first standard mask 50A and the standard region 58 of the second standard mask 50A adjacent to the first standard mask 50A in the second direction D2. Although not shown, the fourth distance V4 may also be the distance between two standard regions 58 included in one standard mask 50A.

[0167] The fourth interval V4 may be, for example, 10 mm or more, 15 mm or more, or 25 mm or more. The fourth interval V4 may be, for example, 50 mm or less, 100 mm or less, or 150 mm or less. The range of the fourth interval V4 may be determined by a first group consisting of 10 mm, 15 mm, and 25 mm and / or a second group consisting of 50 mm, 100 mm, and 150 mm. The range of the fourth interval V4 may be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the fourth interval V4 may be determined by a combination of any two of the values ​​included in the first group. The range of the fourth interval V4 may be determined by a combination of any two of the values ​​included in the second group. For example, it may be 10 mm or more and 150 mm or less, 10 mm or more and 100 mm or less, 10 mm or more and 50 mm or less, 10 mm or more and 25 mm or less, 10 mm or more and 15 mm or less, 15 mm or more and 150 mm or less, 15 mm or more and 100 mm or less, 15 mm or more and 50 mm or less, 15 mm or more and 25 mm or less, 25 mm or more and 150 mm or less, 25 mm or more and 100 mm or less, 25 mm or more and 50 mm or less, 50 mm or more and 150 mm or less, 50 mm or more and 100 mm or less, or 100 mm or more and 150 mm or less.

[0168] 13B, symbol U4 denotes the dimension of the standard region 58 in the second direction D2 (hereinafter also referred to as the fourth dimension). It is preferable that the ratio of the fourth dimension U4 to the fourth spacing V4 be equal to or greater than a certain value. This makes it easier for the standard region 58 to overlap the device space 103 in the second direction D2.

[0169] The ratio U4 / V4 of the fourth dimension U4 to the fourth spacing V4 may be, for example, 0.005 or more, 0.1 or more, 0.2 or more, or 0.3 or more. U4 / V4 may be, for example, 0.5 or less, 0.6 or less, 0.8 or less, or 1.0 or less. The range of U4 / V4 may be defined by a first group consisting of 0.005, 0.1, 0.2, and 0.3, and / or a second group consisting of 0.5, 0.6, 0.8, and 1.0. The range of U4 / V4 may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of U4 / V4 may be defined by a combination of any two of the values ​​included in the first group. The range of U4 / V4 may be defined by a combination of any two of the values ​​included in the second group. For example, it may be 0.005 or more and 1.0 or less, 0.005 or more and 0.8 or less, 0.005 or more and 0.6 or less, 0.005 or more and 0.5 or less, 0.005 or more and 0.3 or less, 0.005 or more and 0.2 or less, 0.005 or more and 0.1 or less, 0.1 or more and 1.0 or less, 0.1 or more and 0.8 or less, 0.1 or more and 0.6 or less, 0.1 or more and 0.5 or less, 0.1 or more and 0.3 or less, 0.1 or more and 0.2 or less, or 0.2 or more and 1. It may be 0.0 or less, 0.2 to 0.8 or less, 0.2 to 0.6 or less, 0.2 to 0.5 or less, 0.2 to 0.3 or less, 0.3 to 1.0 or less, 0.3 to 0.8 or less, 0.3 to 0.6 or less, 0.3 to 0.5 or less, 0.5 to 1.0 or less, 0.5 to 0.8 or less, 0.5 to 0.6 or less, 0.6 to 1.0 or less, 0.6 to 0.8 or less, 0.8 to 1.0 or less.

[0170] FIG. 14 is an enlarged plan view of the region of the standard mask 50A in FIG. 13A surrounded by a dashed line and marked with the symbol XIV. The standard region 58 includes at least one through hole 56. As shown in FIG. 14, the standard region 58 may include multiple through holes 56. The multiple through holes 56 may also be periodically arranged at regular intervals. For example, as shown in FIG. 14, the through holes 56 may be arranged with an arrangement period P3 in one direction and with an arrangement period P4 in the other direction. The arrangement periods P3 and P4 of the through holes 56 may be the same as the arrangement periods P1 and P2 of the standard marks 63 on the standard substrate 60 described above.

[0171] 14 , the third dimension U3 may be the dimension in the first direction D1 of the region in which the groups of through holes 56 are located. The third interval V3 may be the interval in the first direction D1 between two groups of through holes 56. The fourth dimension U4 may be the dimension in the second direction D2 of the region in which the groups of through holes 56 are located. The fourth interval V4 may be the interval in the second direction D2 between two groups of through holes 56.

[0172] As shown in Fig. 14, the standard region 58 may be located in a central region 501 in the second direction D2, which is the width direction of the standard mask 50A. In this embodiment, multiple standard regions 58 are lined up in the central region 501 in the first direction D1, which is the longitudinal direction of the standard mask 50A. The central region 501 is the central region when the standard mask 50A is divided into three equal parts in the width direction. In addition, the two regions adjacent to the central region 501 in the width direction are referred to as edge regions 502. Below, the advantages of locating the standard region 58 in the central region 501 will be described.

[0173] In the process of fixing the standard mask 50A to the frame 41, the standard mask 50A is aligned with respect to the frame 41 while being pulled in the longitudinal direction, and then the standard mask 50A is attached to the frame 41 by welding or the like. If the frame 41 includes an alignment mark 48 as shown in FIG. 5 , the standard mask 50A may be aligned with respect to the frame 41 using the alignment mark 48 as a reference. Although not shown, the standard mask 50A may also include an alignment mark. Furthermore, if the position of the standard region 58 is limited to the central region 501 as in this embodiment, the standard mask 50A can be aligned with respect to the frame 41 by placing more emphasis on the central region 501 than on the edge regions 502. For example, the central region 501 can be weighted more heavily than the edge regions 502. This allows the central region 501 to be aligned with respect to the frame 41 more accurately than the edge regions 502.

[0174] An example of the background behind prioritizing the central region 501 over the edge regions 502 is described below. The metal plate 55 constituting the standard mask 50A is thin. In this case, stretching the standard mask 50A in the longitudinal direction may cause deformation, such as wrinkles extending in the longitudinal direction, in the standard mask 50A. Such deformation may occur more easily in the edge regions 502 than in the central region 501. If deformation, such as wrinkles, occurs in the edge regions 502, and both the central region 501 and the edge regions 502 are equally considered in the process of aligning the standard mask 50A with the frame 41, the deformation of the edge regions 502 may reduce the accuracy of the positioning of the central region 501. In such a case, it is useful to prioritize the central region 501 over the edge regions 502 when aligning the standard mask 50A with the frame 41, as described above. This prevents the accuracy of aligning the central region 501 with the frame 41 from being affected by deformation, such as wrinkles, occurring in the edge regions 502. This allows for a more ideal arrangement of the standard region 58.

[0175] 14 , the standard mask 50A may be located in an edge region 502 and may include two or more through holes 56 aligned in the longitudinal and width directions of the standard mask 50A. The arrangement pitch P5 and arrangement pitch P6 of the through holes 56 in the edge region 502 may be the same as or different from the arrangement pitch P3 and arrangement pitch P4 of the through holes 56 in the central region 501. Furthermore, the arrangement pitch P5 and arrangement pitch P6 of the through holes 56 in the edge region 502 may be the same as the arrangement pitch of the through holes 56 in the mask 50 used to manufacture the organic device 100.

[0176] 14, the standard region 58 located in the central region 501 may include non-penetrating regions 57 located around the through holes 56 and having a dimension larger than the arrangement period of the through holes 56 in a plan view. For example, a dimension E1 of the non-penetrating regions 57 of the standard region 58 in the longitudinal direction of the standard mask 50A may be larger than the arrangement period P3 of the through holes 56 in the longitudinal direction. Furthermore, a dimension E2 of the non-penetrating regions 57 of the standard region 58 in the width direction of the standard mask 50A may be larger than the arrangement period P4 of the through holes 56 in the width direction. The non-penetrating regions 57 are regions in which no through holes 56 are formed.

[0177] By including the non-penetrating region 57 having a dimension larger than the arrangement period of the through holes 56 in the standard region 58, it becomes easier to distinguish the through holes 56 in the standard region 58 from other through holes 56 that do not face the standard marks 63 of the standard substrate 60 in the vapor deposition process described below, such as the through holes 56 in the edge region 502. Furthermore, in the observation process of observing the standard substrate 60 after the vapor deposition process, it becomes easier to distinguish the first vapor deposition layer 130 made of the vapor deposition material that has adhered to the standard substrate 60 through the through holes 56 in the standard region 58 from the first vapor deposition layer 130 made of the vapor deposition material that has adhered to the standard substrate 60 through the other through holes 56. This makes it easier to find the first vapor deposition layer 130 to be observed.

[0178] Next, a method for evaluating the first vapor deposition layer 130 of the manufacturing apparatus 1 using the standard substrate 60 and the standard mask apparatus 15A will be described.

[0179] First, a standard mask device 15A is prepared and carried into the manufacturing apparatus 1. A standard substrate 60 is also prepared and carried into the manufacturing apparatus 1 via the substrate carry-in chamber 31. Subsequently, the standard substrate 60 may be subjected to pre-processing such as dry cleaning in the substrate pre-processing chamber 32.

[0180] Subsequently, a vapor deposition process for forming a first vapor deposition layer 130 on the standard substrate 60 is carried out in the first vapor deposition chamber 10. For example, a vapor deposition process for forming a first organic layer 131 on the standard substrate 60 is carried out in the eleventh vapor deposition chamber 11. The vapor deposition process is the same as that in the case where the electrode substrate 105 and the mask device 15 are used, as follows.

[0181] First, an assembling step is performed in the first deposition chamber 10, in which the standard substrate 60 and the standard mask device 15A are combined. For example, in the eleventh deposition chamber 11, the standard mask device 15A is placed above the deposition source 6 using the mask holder 3. Furthermore, the substrate holder 2 is used to position the substrate 110 of the standard substrate 60 opposite the standard mask 50A of the standard mask device 15A. The substrate holder 2 is then moved in the surface direction of the substrate 110 to adjust the position of the substrate 110 relative to the standard mask 50A. For example, the substrate 110 is moved in the surface direction so that the alignment mark of the standard mask 50A or the frame 41 overlaps with the alignment mark 68 of the substrate 110.

[0182] Subsequently, a step of moving the cooling plate 4 toward the substrate 110 and arranging the cooling plate 4 on the second surface 112 side of the substrate 110 may be performed. Also, a step of arranging the magnet 5 on the second surface 112 side of the substrate 110 may be performed. This allows the standard mask 50A to be attracted toward the substrate 110 by magnetic force. Also, a step of attracting the standard mask 50A toward the substrate 110 using an electrostatic chuck may be performed.

[0183] The combining process of combining the standard substrate 60 and the standard mask device 15A may be performed based on predetermined settings. Examples of conditions include the following. The combining process may take into account any one setting or multiple settings. Arrangement of the substrate 110 ·Magnetic force distribution Distribution of electrostatic force Cooling plate 4 placement The arrangement of the substrate 110 refers to the orientation of the substrate 110, such as the surface direction of the substrate 110. If the substrate holder 2 includes multiple chucks attached to the outer edge of the substrate 110, the orientation of the substrate 110 can be set by independently moving each chuck. When a plurality of magnets 5 are arranged on the second surface 112 side of the substrate 110, the magnetic force distribution can be set by changing the type and arrangement of the magnets 5. The arrangement of the cooling plate 4 refers to the posture of the cooling plate 4, such as the surface direction of the cooling plate 4, for example.

[0184] Next, a vapor deposition process is carried out in which the vapor deposition material 7 is evaporated and caused to fly toward the substrate 110. A portion of the vapor deposition material 7 that passes through the through-holes 56 of the standard mask 50A is deposited on the standard marks 63 of the substrate 110 in a pattern corresponding to the through-holes 56. This allows the first organic layer 131 to be formed on the standard mark region 62 of the substrate 110. FIG. 15 is a cross-sectional view showing how the first vapor deposition layer 130, such as the first organic layer 131, is formed on the standard marks 63 of the standard substrate 60 via the through-holes 56 of the standard mask 50A.

[0185] Subsequently, an unloading step may be performed in which the substrate 110 on which the first deposition layer 130 has been formed is unloaded from the manufacturing apparatus 1 to the outside via the substrate unloading chamber 35. The substrate 110 may be unloaded to the outside of the manufacturing apparatus 1 in a state in which elements on the substrate 110, such as the first deposition layer 130, are not sealed. As a mechanism for unloading the substrate 110 from the manufacturing apparatus 1 to the outside, an arm that can move while supporting the substrate 110 may be used.

[0186] Next, an observation step is carried out to observe the positional relationship between the reference mark 63 and the first vapor deposition layer 130 on the substrate 110 carried out from the manufacturing apparatus 1. In the observation step of this embodiment, the substrate 110 on which the reference mark 63 and the first vapor deposition layer 130 are formed is observed from the first surface 111 side using an optical microscope. As the optical microscope, a large automatic two-dimensional coordinate measuring machine AMIC-1710 manufactured by Sinto S Precision Co., Ltd. can be used. The conditions for observation using the optical microscope are as follows: ·Magnification: 10x~20x Camera: 2 / 3 inch black and white CCD camera Image processing software: 3D-SACM

[0187] Note that other steps may be performed between the carrying-out step and the observation step, such as a step of moving the substrate 110 to an observation location, or a step of subjecting the substrate 110 to a process for improving the efficiency of observation.

[0188] 16 to 19 are plan views each showing an example of the observation results of the positional relationship between the standard mark 63 and the first vapor deposition layer 130. FIG.

[0189] In the example shown in FIG. 16, the first vapor deposition layer 130 is located inside the outer edge of the first mark 64 of the standard mark 63. In this case, the outer edge of the first mark 64 that surrounds the outer edge of the first vapor deposition layer 130 is observed. Also, in the example shown in FIG. 16, the first vapor deposition layer 130 is located outside the outer edge of the second mark 65 of the standard mark 63. In this case, the outer edge of the second mark 65 is not observed.

[0190] In the example shown in FIG. 17, the first vapor deposition layer 130 is located partially outside the outer edge of the first mark 64 of the standard mark 63. In this case, part of the outer edge of the first mark 64 is not observed. Also, in the example shown in FIG. 17, the first vapor deposition layer 130 is located outside the outer edge of the second mark 65 of the standard mark 63. In this case, the outer edge of the second mark 65 is not observed.

[0191] In the example shown in FIG. 18, the first vapor deposition layer 130 is located partially outside the outer edge of the first mark 64 of the standard mark 63. In this case, part of the outer edge of the first mark 64 is not observed. Also, in the example shown in FIG. 18, the first vapor deposition layer 130 is located partially inside the outer edge of the second mark 65 of the standard mark 63. In this case, part of the outer edge of the second mark 65 is observed.

[0192] In the example shown in FIG. 19, the first deposition layer 130 is located inside the outer edge of the first mark 64 of the standard mark 63. In this case, the outer edge of the first mark 64 that surrounds the outer edge of the first deposition layer 130 is observed. Also, in the example shown in FIG. 19, the first deposition layer 130 is located partially inside the outer edge of the second mark 65 of the standard mark 63. In this case, part of the outer edge of the second mark 65 is observed.

[0193] Subsequently, a determination step may be performed to determine whether or not the positional relationship between the standard mark 63 and the first vapor deposition layer 130 satisfies a condition. For example, the determination step may include a first determination step to determine whether or not the following condition (1) is satisfied: (1) The outer edge of the first vapor deposition layer 130 is located inside the outer edge of the first mark 64 of the standard mark 63.

[0194] 16 to 19, the examples shown in Fig. 16 and Fig. 19 satisfy condition (1). When the organic device 100 is manufactured using the first vapor deposition chamber 10 that satisfies condition (1), it is possible to prevent unit structures such as two adjacent pixels on the substrate 110 from partially overlapping each other. This makes it possible to prevent color mixing between two adjacent pixels, for example, when the organic device 100 is an organic EL display device.

[0195] The determining step may include a second determining step of determining whether the following condition (2) is satisfied: (2) The outer edge of the first vapor deposition layer 130 is located outside the outer edge of the second mark 65 .

[0196] 16 to 19, the examples shown in Fig. 16 and 17 satisfy condition (2). When the organic device 100 is manufactured using the first vapor deposition chamber 10 that satisfies condition (2), it is possible to prevent the first vapor deposition layer 130 from being smaller than the region of the first electrode layer 120 that is exposed from the insulating layer 160 in a plan view. This makes it possible to prevent a decrease in the luminous efficiency of the pixels when the organic device 100 is, for example, an organic EL display device.

[0197] In the determination step, the first deposition chamber 10 used to form the first deposition layer 130 may be determined to be a non-defective product if the above-mentioned condition (1) is satisfied. Also, in the determination step, the first deposition chamber 10 used to form the first deposition layer 130 may be determined to be a non-defective product if the above-mentioned conditions (1) and (2) are satisfied. Also, in the determination step, the first deposition chamber 10 used to form the first deposition layer 130 may be determined to be a non-defective product if the above-mentioned condition (2) is satisfied.

[0198] 16 to 19, the positional relationship between the reference mark 63 and the first deposition layer 130 may be evaluated in more detail. For example, the amount and direction of deviation of the first deposition layer 130 from the reference mark 63 may be evaluated. This allows the state of the first deposition chamber 10 to be known in more detail.

[0199] The determination step may be performed based on the above-described conditions (1) and (2) for each region of the substrate 110 on which the first deposition layer 130 is deposited. For example, the region of the substrate 110 on which the first deposition layer 130 is deposited may be divided into m regions in the first direction D1 and n regions in the second direction D2, and the determination step may be performed for each m×n region. FIG. 20 is a plan view showing an example of a case where the determination step is performed for each region of the substrate 110. In the example shown in FIG. 20, m=6 and n=11. The symbol Rk-l represents the k-th region in the first direction D1 and the l-th region in the second direction D2.

[0200] In the example shown in FIG. 20, the determination result for each region Rk-l of the substrate 110 is represented by the symbol A, B1, B2, or C. Symbol A indicates that both conditions (1) and (2) are satisfied, as in the example shown in FIG. 16 above. Symbol B1 indicates that condition (1) is not satisfied but condition (2) is satisfied, as in the example shown in FIG. 17 above. Symbol B2 indicates that both conditions (1) and (2) are not satisfied, as in the example shown in FIG. 18 above. Symbol C indicates that condition (1) is satisfied but condition (2) is not satisfied, as in the example shown in FIG. 19 above.

[0201] 20, the state of each region of the first deposition chamber 10 can be known in more detail. Furthermore, in each region Rk-l of the substrate 110, the amount and direction of deviation of the first deposition layer 130 from the reference mark 63 can be evaluated. This allows the state of each region of the first deposition chamber 10 to be known in more detail.

[0202] Subsequently, an adjustment step may be performed to adjust the settings of the assembly step of combining the standard substrate 60 and the standard mask device 15A based on the information on the positional relationship between the standard mark 63 and the first vapor deposition layer 130 obtained in the observation step. For example, based on the information on the positional relationship, settings such as the arrangement of the substrate 110, the magnetic force distribution of the magnet 5, the electrostatic force distribution of the electrostatic chuck, and the arrangement of the cooling plate 4 may be adjusted. Thereafter, the above-described deposition step, observation step, and evaluation step may be performed in the adjusted first vapor deposition chamber 10, and it may be confirmed that the adjusted first vapor deposition chamber 10 satisfies the above-described conditions (1) and (2). The settings adjusted in the adjustment step may also be used in a method for manufacturing an organic device 100 using the electrode substrate 105 and the mask device 15.

[0203] The above-described deposition process, observation process, judgment process, adjustment process, etc. using the standard substrate 60 and the standard mask device 15A may be performed in an evaluation method when a newly manufactured manufacturing apparatus 1 is delivered to a customer. Alternatively, the above-described deposition process, observation process, judgment process, adjustment process, etc. may be performed in a maintenance method for a manufacturing apparatus 1 that has already been delivered to a customer.

[0204] According to the present embodiment, the vapor deposition process is performed using the standard substrate 60 and the standard mask device 15A, thereby making it possible to individually evaluate the characteristics of each first vapor deposition chamber 10 included in the manufacturing apparatus 1. Therefore, if the organic device 100 manufactured by the manufacturing apparatus 1 does not satisfy the desired specifications, it becomes easier to identify the cause. Furthermore, each first vapor deposition chamber 10 included in the manufacturing apparatus 1 can be individually guaranteed based on the evaluation results.

[0205] By carrying out the above-described evaluation method or maintenance method, it is possible to obtain a manufacturing apparatus 1 equipped with a first vapor deposition chamber 10 that satisfies the conditions of the evaluation step. For example, it is possible to obtain a manufacturing apparatus 1 equipped with a first vapor deposition chamber 10 that is proven to satisfy the above-described condition (1) "the outer edge of the first vapor deposition layer 130 is located inside the outer edge of the first mark 64 of the standard mark 63." Furthermore, by forming the first vapor deposition layer 130 on the electrode substrate 105 using a mask device 15 in a first vapor deposition chamber 10 that satisfies the conditions of the evaluation step, it is possible to improve the accuracy of the position and dimensions of the first vapor deposition layer 130 in the organic device 100. This can reduce the defective rate of the organic device 100 and improve the characteristics of the organic device 100.

[0206] It should be noted that various modifications can be made to the above-described embodiment. Other embodiments will be described below with reference to the drawings as necessary. In the following description and the drawings used in the following description, parts that can be configured similarly to the above-described embodiment will be designated by the same reference numerals as those used for the corresponding parts in the above-described embodiment, and duplicated descriptions will be omitted. Furthermore, if it is clear that the effects obtained in the above-described embodiment can also be obtained in other embodiments, the descriptions of those effects may be omitted.

[0207] FIG. 21 is a plan view showing an example of a standard mask device 15A. As shown in FIG. 21, the standard mask device 15A may include an end standard mask 50B that is closer to the first side 411 and the second side 412 of the frame 41 than the standard mask 50A in the second direction D2 and has a width different from that of the standard mask 50A. In the example shown in FIG. 21, the width of the end standard mask 50B is smaller than that of the standard mask 50A. Like the standard mask 50A, the end standard mask 50B may include two or more standard regions 58 aligned in the first direction D1. By including the end standard mask 50B in the standard mask device 15A, the range of the standard regions 58 of the standard mask device 15A can be expanded to include a region of the opening 43 of the frame 41 that is closer to the first side 411. This allows the range R1 of the standard mark region 62 of the standard substrate 60, which is determined corresponding to the range of the standard region 58 of the standard mask device 15A, to be expanded. This allows evaluation of the first vapor deposition chamber 10 over a wider area.

[0208] FIG. 22 is a plan view showing an example of a standard mask device 15A. FIG. 23 is an enlarged plan view showing an intermediate portion 52A of the standard mask 50A of FIG. 22. The standard mask 50A may have an effective area 53 including a plurality of through-holes 56, similar to the mask 50 used to manufacture the organic device 100. In this case, the standard area 58 may be located in a peripheral area 54 surrounding the effective area 53. For example, as shown in FIG. 23, the standard area 58 may be located in a region of the peripheral area 54 that does not overlap with the effective area 53 when viewed along the first direction D1 and does not overlap with the effective area 53 when viewed along the second direction D2. When the standard area 58 is located in the peripheral area 54, the standard mask device 15A may not include the support member that overlaps with the peripheral area 54 in a plan view and extends in the second direction D2, as shown in FIG. 22.

[0209] Fig. 24 is a plan view showing an example of the intermediate portion 52A of the standard mask 50A. As shown in Fig. 24, the standard region 58 may be located in a region of the surrounding region 54 that overlaps with the effective region 53 when viewed in the first direction D1 but does not overlap with the effective region 53 when viewed in the second direction D2.

[0210] Fig. 25 is a plan view showing an example of an intermediate portion 52A of a standard mask 50A. As shown in Fig. 25, the standard mask 50A may include two or more standard regions 58 located in an end region 502 and aligned in the first direction D1. In this case, the standard mask 50A may or may not include two or more standard regions 58 located in a central region 501 and aligned in the first direction D1.

[0211] Fig. 26 is a plan view showing an example of the intermediate portion 52A of the standard mask 50A. As shown in Fig. 26, the edge region 502 of the standard mask 50A may include a non-penetrating region 57. For example, the through-hole 56 does not have to be located in a region of the edge region 502 that overlaps with one of the standard regions 58 in the central region 501 when viewed along the second direction D2.

[0212] Fig. 27 is a plan view showing an example of the standard mark area 62 of the standard substrate 60. As shown in Fig. 27, the first mark 64 of the standard mark area 62 may include a layer extending into an area surrounded by a first outer edge 641. The layer of the first mark 64 may be a light-shielding layer having light-shielding properties.

[0213] FIG. 28 is a plan view showing an example of the standard mark area 62 of the standard substrate 60. As shown in FIG. 28, the second mark 65 of the standard mark area 62 may include a layer extending into an area surrounded by the second outer edge 651. In this case, the first mark 64 may include a layer extending between the first outer edge 641 and the second outer edge 651. For example, the first mark 64 may include a layer extending into an area surrounded by the first outer edge 641, and the second mark 65 may be located on the layer of the first mark 64 and include a layer extending into an area surrounded by the second outer edge 651. The layer of the first mark 64 may be a light-shielding layer having light-shielding properties. Furthermore, the layer of the second mark 65 may be a light-shielding layer having light-shielding properties.

[0214] Fig. 29 is a plan view showing an example of a standard mark area 62 of a standard substrate 60. As shown in Fig. 29, the standard mark area 62 may include a first mark 64 including two perpendicularly intersecting linear elements 643. In this case, a first outer edge 641 of the first mark 64 may be defined by an imaginary straight line that is tangent to an end 644 of the linear elements 643 and is perpendicular to the linear elements 643, as shown by the dotted line in Fig. 29.

[0215] 30 and 31 are cross-sectional views showing an example of a process for observing the first vapor deposition layer 130 on the first mark 64 of the standard substrate 60. In the example shown in Fig. 30 and 31, the first mark 64 in the standard mark area 62 may be a light-shielding layer having light-shielding properties.

[0216] As shown in FIGS. 30 and 31 , the observation step of observing the first vapor deposition layer 130 may include a step of irradiating light L1 toward the first mark 64 from the surface of the standard substrate 60 opposite the light-shielding layer of the first mark 64 and the first vapor deposition layer 130, i.e., from the second surface 112, and observing whether excitation light L2 is generated from the first vapor deposition layer 130. When the first vapor deposition layer 130 contains a fluorescent material, excitation light is generated from the first vapor deposition layer 130 when light is irradiated onto the first vapor deposition layer 130. Therefore, as shown in FIG. 31 , when the outer edge of the first vapor deposition layer 130 is located outside the first outer edge 641 of the first mark 64 in a planar view, excitation light L2 is likely to be generated from the first vapor deposition layer 130. On the other hand, as shown in FIG. 30 , when the outer edge of the first vapor deposition layer 130 is located inside the first outer edge 641 of the first mark 64 in a planar view, excitation light L2 is unlikely to be generated from the first vapor deposition layer 130. Therefore, by observing whether or not excitation light L2 is generated, information can be obtained as to whether or not the outer edge of the first deposition layer 130 is located inside the first outer edge 641 of the first mark 64 in a planar view.

[0217] In the observation step of observing the first deposited layer 130, the absolute position of the first deposited layer 130 in the coordinate system on the substrate 110 of the standard substrate 60 may be calculated. In this case, the information obtained by the evaluation method of the first deposition chamber 10 may include both information about the absolute position of the first deposited layer 130 in the coordinate system on the substrate 110 of the standard substrate 60 and information about the relative position of the first deposited layer 130 with respect to the standard mark 63 of the standard substrate 60, or may include only one of them.

[0218] An example of a method for calculating the absolute position of the first deposited layer 130 in the coordinate system on the substrate 110 of the standard substrate 60 will be described. For example, if the standard substrate 60 includes the alignment mark 68 as described above, the coordinates of the standard marks 63, such as the first mark 64 and the second mark 65, in the coordinate system on the substrate 110 of the standard substrate 60 may be calculated using the alignment mark 68 as a reference. In this case, information about the absolute position of the first deposited layer 130 in the coordinate system on the substrate 110 of the standard substrate 60 can be obtained based on information about the coordinates of the standard mark 63 and information about the relative positional deviation of the first deposited layer 130 with respect to the standard mark 63. As in the observation process described above, a large-scale automatic two-dimensional coordinate measuring machine AMIC-1710 manufactured by Sinto S Precision Co., Ltd. can be used as an apparatus for measuring the coordinates of the standard mark 63.

[0219] If the standard substrate 60 includes alignment marks 68, the above-described determination step may be performed based on information regarding the absolute position of the first deposited layer 130 in the coordinate system on the substrate 110 of the standard substrate 60. For example, the determination step may be performed based on whether the coordinates of the center of the first deposited layer 130 are within a specified range. Alternatively, the determination step may be performed based on whether the coordinates of the outer edge of the first deposited layer 130 are within a specified range. In these cases, the determination step can be said to be performed based on the relationship between the coordinate system on the substrate 110 of the standard substrate 60, which is defined by the alignment marks 68, and the first deposited layer 130. Furthermore, the observation step can be said to observe the positional relationship between the alignment marks 68 and the first deposited layer 130. Therefore, the alignment marks 68 can be said to function as standard marks of the standard substrate 60. In this case, the number of alignment marks 68 functioning as standard marks may be fewer than the number of first deposited layers 130 formed on the substrate 110.

[0220] In the above-described embodiment, an example was shown in which the arrangement direction of the through holes 56 of the standard mask 50A is parallel to the first direction D1, which is the longitudinal direction of the standard mask 50A, or the second direction D2, which is the width direction of the standard mask 50A. For example, an example was shown in which the through holes 56 of the standard mask 50A are aligned in the first direction D1 and the second direction D2. However, this is not limited to this, and the arrangement direction of the through holes 56 in the standard region 58 of the standard mask 50A may be different from the first direction D1 and the second direction D2. For example, as shown in FIG. 32, the arrangement direction of the through holes 56 of the standard mask 50A may be a third direction D3 and a fourth direction D4, which are different from the first direction D1 and the second direction D2. In the example shown in FIG. 32, the symbol P3 represents the arrangement period of the through holes 56 in the standard region 58 in the third direction D3, and the symbol P4 represents the arrangement period of the through holes 56 in the standard region 58 in the fourth direction D4.

[0221] Furthermore, the arrangement direction of the through holes 56 located in the edge region 502 may be different from the first direction D1 and the second direction D2. For example, as shown in FIG. 32, the arrangement direction of the through holes 56 of the standard mask 50A may be a third direction D3 and a fourth direction D4 that are different from the first direction D1 and the second direction D2. In the example shown in FIG. 32, symbol P5 represents the arrangement period of the through holes 56 in the edge region 502 in the third direction D3, and symbol P4 represents the arrangement period of the through holes 56 in the edge region 502 in the fourth direction D4. The arrangement periods P5 and P6 of the through holes 56 in the edge region 502 may be the same as or different from the arrangement periods P3 and P4 of the through holes 56 in the central region 501.

[0222] 32 , the standard region 58 located in the central region 501 may include non-penetrating regions 57 located around the through holes 56 and having a dimension larger than the arrangement period of the through holes 56 in a plan view. For example, a dimension E1 of the non-penetrating regions 57 of the standard region 58 in the third direction D3 may be larger than the arrangement period P3 of the through holes 56 in the third direction D3. Furthermore, a dimension E2 of the non-penetrating regions 57 of the standard region 58 in the fourth direction D4 may be larger than the arrangement period P4 of the through holes 56 in the fourth direction D4. This makes it easier to distinguish, in the observation process, the first deposition layer 130 formed of the deposition material that has passed through the through holes 56 of the standard region 58 and adhered to the standard substrate 60 from the first deposition layer 130 formed of the deposition material that has passed through the other through holes 56 and adhered to the standard substrate 60.

[0223] Next, a second embodiment will be described. The second embodiment has a feature regarding the mask support 40.

[0224] When a mask support, such as a frame, that supports a mask is deformed, the position of the mask fixed to the mask support changes. It is therefore necessary to suppress deformation of the mask support.

[0225] A mask support according to a second embodiment, which supports a mask while applying tension to the mask, may include a frame including an opening, and a rung located in the opening and connected to the frame. The frame may include a frame first surface to which the mask is fixed, a frame second surface located opposite the frame first surface, an inner surface located between the frame first surface and the frame second surface and to which the rung is connected, and an outer surface located opposite the inner surface. The rung may include a rung first surface located on the side of the frame first surface, a rung second surface located opposite the rung first surface, and a rung side surface located between the rung first surface and the rung second surface. The frame first surface and the rung first surface may be continuous.

[0226] According to the second embodiment, it is possible to prevent the mask support from being deformed.

[0227] A first aspect of the second embodiment is a mask support that supports a mask while applying tension to the mask, a frame including an opening; a crosspiece located in the opening and connected to the frame; the frame includes a frame first surface to which the mask is fixed, a frame second surface located opposite to the frame first surface, an inner surface located between the frame first surface and the frame second surface and to which the bar is connected, and an outer surface located opposite to the inner surface, the crosspiece includes a crosspiece first surface located on the frame first surface side, a crosspiece second surface located on the opposite side of the crosspiece first surface, and a crosspiece side surface located between the crosspiece first surface and the crosspiece second surface, The first surface of the frame and the first surface of the crosspiece are continuous with each other, making it a mask support.

[0228] In a second aspect of the second embodiment, in the mask support according to the first aspect described above, the frame first surface and the crosspiece first surface may be located on the same plane.

[0229] A third aspect of the second embodiment is a mask support according to either the first aspect or the second aspect described above, wherein when the mask support is viewed along the normal direction of the frame first surface, the inner surface and the rib side surface may be connected via a first connection portion having a first radius of curvature.

[0230] A fourth aspect of the second embodiment is that in a mask support according to each of the first aspect to the third aspect described above, the inner surface and the second surface of the bar may be connected via a second connection portion having a second radius of curvature.

[0231] A fifth aspect of the second embodiment is a mask support according to any one of the first to fourth aspects, wherein the frame includes a pair of first sides extending in a first direction and a pair of second sides extending in a second direction intersecting the first direction. The mask may be fixed to the second sides. The bars may include first bars connected to the first sides.

[0232] A sixth aspect of the second embodiment is a mask support according to any one of the first to fourth aspects, wherein the frame includes a pair of first sides extending in a first direction and a pair of second sides extending in a second direction intersecting the first direction. The mask may be fixed to the second sides. The bars may include second bars connected to the second sides.

[0233] A seventh aspect of the second embodiment is a mask support according to any one of the first to fourth aspects described above, wherein the frame includes a pair of first sides extending in a first direction and a pair of second sides extending in a second direction intersecting the first direction. The mask may be fixed to the second sides. The bars may include a first bar connected to the first sides and a second bar connected to the second sides. When the mask support is viewed along a normal direction to the frame first surface, a bar side surface of the first bar and a bar side surface of the second bar may be connected via a third connection portion having a third radius of curvature.

[0234] An eighth aspect of the second embodiment is that in a mask support according to each of the first aspect to the seventh aspect described above, the width of the bar at the first surface of the bar may be greater than the width of the bar at the second surface of the bar.

[0235] A ninth aspect of the second embodiment is that in a mask support according to each of the first aspect to the eighth aspect described above, the bar may include a portion in which the width of the bar decreases as it approaches the second surface of the bar in the thickness direction of the bar.

[0236] A tenth aspect of the second embodiment is that, in a mask support according to each of the first aspect to the ninth aspect described above, the inner surface may include a portion that, in a planar view, moves away from the center of the opening as it approaches the frame second surface in the thickness direction of the frame.

[0237] An eleventh aspect of the second embodiment is the mask support according to each of the first to tenth aspects described above, wherein the thickness of the frame may be 5 mm or more and 40 mm or less.

[0238] A twelfth aspect of the second embodiment is a mask support according to each of the first to eleventh aspects described above, wherein the thickness of the crosspiece may be 50 μm or more and 1000 μm or less.

[0239] A thirteenth aspect of the second embodiment is a mask support according to each of the first to twelfth aspects described above, wherein the thickness of the bars may be smaller than the thickness of the frame.

[0240] A fourteenth aspect of the second embodiment is that in a mask support according to each of the first aspect to the thirteenth aspect described above, the ratio of the thickness of the bar to the thickness of the frame may be 0.85 or less.

[0241] A fifteenth aspect of the second embodiment is a mask support according to each of the first to fourteenth aspects described above, wherein the width of the bars may be 1 mm or more and 100 mm or less.

[0242] A 16th aspect of the second embodiment is a method for manufacturing a mask support according to any one of the first aspect to the 15th aspect described above, comprising a preparation step of preparing a plate including a first surface and a second surface located opposite the first surface, and a processing step of forming the crosspiece by processing the central region of the plate from the second surface side when viewing the plate along the normal direction of the second surface.

[0243] A 17th aspect of the second embodiment is a mask device comprising a mask support according to any one of the first aspect to the 15th aspect described above, and a mask including a through hole and fixed to the first surface of the frame of the mask support.

[0244] An eighteenth aspect of the second embodiment is the mask device according to the seventeenth aspect, wherein the mask support may include two or more openings partitioned by the bars. The mask may include two or more effective areas. The effective areas may include a group of regularly arranged through-holes. In a plan view, two or more of the effective areas may overlap one of the openings.

[0245] A 19th aspect of the second embodiment is a method for manufacturing an organic device, comprising a vapor deposition step of forming a vapor deposition layer on a substrate by vapor depositing an organic material on the substrate through the through holes of the mask of a mask device according to each of the 17th aspect or the 18th aspect described above.

[0246] A twentieth aspect of the second embodiment is an organic device, comprising the deposition layer formed on the substrate by the deposition step of the method for manufacturing an organic device according to the 19th aspect described above.

[0247] The second embodiment will be described in detail below with reference to the drawings. Note that the embodiments shown below are examples of the second embodiment, and the second embodiment should not be construed as being limited to these embodiments. In the following description and the drawings used in the following description, parts that can be configured similarly to the above-described embodiment will be designated by the same reference numerals as those used for corresponding parts in the above-described embodiment. Duplicate descriptions will be omitted. Furthermore, if it is clear that the effects obtained in the above-described embodiment can also be obtained in the following embodiment, the description may be omitted.

[0248] FIG. 33 is a plan view showing the mask device 15 as viewed from the first surface 551 side of the mask 50. In FIG. 33, the symbol L1 represents the dimension of the mask 50 in the first direction D1, i.e., the length of the mask 50. The dimension L1 may be, for example, 150 mm or more, 300 mm or more, 450 mm or more, or 600 mm or more. The dimension L1 may be, for example, 750 mm or less, 1000 mm or less, 1500 mm or less, or 2000 mm or less. The range of the dimension L1 may be defined by a first group consisting of 150 mm, 300 mm, 450 mm, and 600 mm, and / or a second group consisting of 750 mm, 1000 mm, 1500 mm, and 2000 mm. The range of the dimension L1 may be defined by a combination of any one of the values ​​included in the first group described above with any one of the values ​​included in the second group described above. The range of dimension L1 may be defined by a combination of any two values ​​from the first group described above. The range of dimension L1 may be defined by a combination of any two values ​​from the second group described above.For example, it may be 150 mm or more and 2000 mm or less, 150 mm or more and 1500 mm or less, 150 mm or more and 1000 mm or less, 150 mm or more and 750 mm or less, 150 mm or more and 600 mm or less, 150 mm or more and 450 mm or less, 150 mm or more and 300 mm or less, 300 mm or more and 2000 mm or less, 300 mm or more and 1500 mm or less, 300 mm or more and 1000 mm or less, 300 mm or more and 750 mm or less, 300 mm or more and 600 mm or less, 300 mm or more and 450 mm or less, 450 mm or more and 2000 mm or less, It may be 50 mm or more and 1500 mm or less, 450 mm or more and 1000 mm or less, 450 mm or more and 750 mm or less, 450 mm or more and 600 mm or less, 600 mm or more and 2000 mm or less, 600 mm or more and 1500 mm or less, 600 mm or more and 1000 mm or less, 600 mm or more and 750 mm or less, 750 mm or more and 2000 mm or less, 750 mm or more and 1500 mm or less, 750 mm or more and 1000 mm or less, 1000 mm or more and 2000 mm or less, 1000 mm or more and 1500 mm or less, or 1500 mm or more and 2000 mm or less.

[0249] In FIG. 33 , the symbol WA1 represents the dimension of the mask 50 in the second direction D2, i.e., the width of the mask 50. The dimension WA1 may be, for example, 50 mm or more, 100 mm or more, 150 mm or more, or 200 mm or more. The dimension WA1 may be, for example, 250 mm or less, 300 mm or less, 350 mm or less, or 400 mm or less. The range of the dimension WA1 may be defined by a first group consisting of 50 mm, 100 mm, 150 mm, and 200 mm, and / or a second group consisting of 250 mm, 300 mm, 350 mm, and 400 mm. The range of the dimension WA1 may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the dimension WA1 may be defined by a combination of any two of the values ​​included in the first group. The range of the dimension WA1 may be defined by a combination of any two of the values ​​included in the second group mentioned above.For example, it may be 50 mm or more and 400 mm or less, 50 mm or more and 350 mm or less, 50 mm or more and 300 mm or less, 50 mm or more and 250 mm or less, 50 mm or more and 200 mm or less, 50 mm or more and 150 mm or less, 50 mm or more and 100 mm or less, 100 mm or more and 400 mm or less, 100 mm or more and 350 mm or less, 100 mm or more and 300 mm or less, 100 mm or more and 250 mm or less, 100 mm or more and 200 mm or less, 100 mm or more and 150 mm or less, 150 mm or more and 400 mm or less, It may be 50mm or more and 350mm or less, 150mm or more and 300mm or less, 150mm or more and 250mm or less, 150mm or more and 200mm or less, 200mm or more and 400mm or less, 200mm or more and 350mm or less, 200mm or more and 300mm or less, 200mm or more and 250mm or less, 250mm or more and 400mm or less, 250mm or more and 350mm or less, 250mm or more and 300mm or less, 300mm or more and 400mm or less, 300mm or more and 350mm or less, or 350mm or more and 400mm or less.

[0250] The mask support 40 will now be described. FIG. 34 is a diagram showing a state in which the mask 50 has been removed from the mask device 15 of FIG. 33. The mask support 40 may include a frame 41 including an opening 43, as well as crosspieces 42 connected to the frame 41. The crosspieces 42 may extend across the openings 43. During the vapor deposition process described below, the crosspieces 42 can be positioned below an area of ​​the mask 50 that overlaps with the openings 43 in a plan view. The crosspieces 42 may support the mask 50 from below during the vapor deposition process. This can prevent the mask 50 from bending due to its own weight.

[0251] The frame 41, the crosspiece 42, and the opening 43 will be described. First, the frame 41 will be described.

[0252] As shown in FIGS. 33 and 34 , the frame 41 may include a pair of first sides 411 facing each other across the opening 43 and a pair of second sides 412 facing each other across the opening 43. The first sides 411 and the second sides 412 extend in different directions. For example, as shown in FIG. 33 , the first sides 411 may extend in a first direction D1, which is the longitudinal direction of the mask 50, and the second sides 412 may extend in a second direction D2 perpendicular to the first direction D1. As shown in FIG. 33 , the end 51 of the mask 50 may be fixed to the second sides 412. Furthermore, the second sides 412 to which the mask 50 is fixed may be longer than the first sides 411. The opening 43 of the frame 41 may be surrounded by the pair of first sides 411 and the pair of second sides 412.

[0253] In FIG. 34, the symbol L21 represents the dimension of the opening 43 of the frame 41 in the first direction D1. The symbol L22 represents the dimension of the opening 43 of the frame 41 in the second direction D2. L22 / L21 may be, for example, 0.6 or greater, 0.8 or greater, 1.0 or greater, or 1.2 or greater. L22 / L21 may be, for example, 1.4 or less, 1.6 or less, 1.8 or less, or 2.0 or less. The range of L22 / L21 may be defined by a first group consisting of 0.6, 0.8, 1.0, and 1.2, and / or a second group consisting of 1.4, 1.6, 1.8, and 2.0. The range of L22 / L21 may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of L22 / L21 may be determined by a combination of any two of the values ​​included in the first group described above. The range of L22 / L21 may be determined by a combination of any two of the values ​​included in the second group described above. For example, the range may be 0.6 or more and 2.0 or less, 0.6 or more and 1.8 or less, 0.6 or more and 1.6 or less, 0.6 or more and 1.4 or less, 0.6 or more and 1.2 or less, 0.6 or more and 1.0 or less, 0.6 or more and 0.8 or less, 0.8 or more and 2.0 or less, 0.8 or more and 1.8 or less, 0.8 or more and 1.6 or less, 0.8 or more and 1.4 or less, 0.8 or more and 1.2 or less, 0.8 or more and 1.0 or less, or 1.0 or more and 2.0 or less. Alternatively, it may be 1.0 or more and 1.8 or less, 1.0 or more and 1.6 or less, 1.0 or more and 1.4 or less, 1.0 or more and 1.2 or less, 1.2 or more and 2.0 or less, 1.2 or more and 1.8 or less, 1.2 or more and 1.6 or less, 1.2 or more and 1.4 or less, 1.4 or more and 2.0 or less, 1.4 or more and 1.8 or less, 1.4 or more and 1.6 or less, 1.6 or more and 2.0 or less, 1.6 or more and 1.8 or less, or 1.8 or more and 2.0 or less.

[0254] The dimension L21 of the opening 43 in the first direction D1 may be, for example, 150 mm or more, 300 mm or more, 450 mm or more, or 600 mm or more. The dimension L21 may be, for example, 750 mm or less, 1000 mm or less, 1500 mm or less, or 2000 mm or less. The range of the dimension L21 may be defined by a first group consisting of 150 mm, 300 mm, 450 mm, and 600 mm, and / or a second group consisting of 750 mm, 1000 mm, 1500 mm, and 2000 mm. The range of the dimension L21 may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the dimension L21 may be defined by a combination of any two of the values ​​included in the first group. The range of the dimension L21 may be defined by a combination of any two of the values ​​included in the second group.For example, it may be 150 mm or more and 2000 mm or less, 150 mm or more and 1500 mm or less, 150 mm or more and 1000 mm or less, 150 mm or more and 750 mm or less, 150 mm or more and 600 mm or less, 150 mm or more and 450 mm or less, 150 mm or more and 300 mm or less, 300 mm or more and 2000 mm or less, 300 mm or more and 1500 mm or less, 300 mm or more and 1000 mm or less, 300 mm or more and 750 mm or less, 300 mm or more and 600 mm or less, 300 mm or more and 450 mm or less, 450 mm or more and 2000 mm or less, It may be 50 mm or more and 1500 mm or less, 450 mm or more and 1000 mm or less, 450 mm or more and 750 mm or less, 450 mm or more and 600 mm or less, 600 mm or more and 2000 mm or less, 600 mm or more and 1500 mm or less, 600 mm or more and 1000 mm or less, 600 mm or more and 750 mm or less, 750 mm or more and 2000 mm or less, 750 mm or more and 1500 mm or less, 750 mm or more and 1000 mm or less, 1000 mm or more and 2000 mm or less, 1000 mm or more and 1500 mm or less, or 1500 mm or more and 2000 mm or less.

[0255] The dimension L22 of the opening 43 in the second direction D2 may be, for example, 600 mm or more, 800 mm or more, 1000 mm or more, or 1200 mm or more. The dimension L22 may be, for example, 1400 mm or less, 1600 mm or less, 1800 mm or less, or 2000 mm or less. The range of the dimension L22 may be defined by a first group consisting of 600 mm, 800 mm, 1000 mm, and 1200 mm, and / or a second group consisting of 1400 mm, 1600 mm, 1800 mm, and 2000 mm. The range of the dimension L22 may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the dimension L22 may be defined by a combination of any two of the values ​​included in the first group. The range of the dimension L22 may be defined by a combination of any two of the values ​​included in the second group mentioned above.For example, it may be 600 mm or more and 2000 mm or less, 600 mm or more and 1800 mm or less, 600 mm or more and 1600 mm or less, 600 mm or more and 1400 mm or less, 600 mm or more and 1200 mm or less, 600 mm or more and 1000 mm or less, 600 mm or more and 800 mm or less, 800 mm or more and 2000 mm or less, 800 mm or more and 1800 mm or less, 800 mm or more and 1600 mm or less, 800 mm or more and 1400 mm or less, 800 mm or more and 1200 mm or less, 800 mm or more and 1000 mm or less, 1000 mm or more and 2000 mm or less, or 1000 mm or more. The length may be 1,000 mm or more and 1,600 mm or less, 1,000 mm or more and 1,400 mm or less, 1,000 mm or more and 1,200 mm or less, 1,200 mm or more and 2,000 mm or less, 1,200 mm or more and 1,800 mm or less, 1,200 mm or more and 1,600 mm or less, 1,200 mm or more and 1,400 mm or more and 2,000 mm or less, 1,400 mm or more and 1,800 mm or less, 1,400 mm or more and 1,600 mm or less, 1,600 mm or more and 2,000 mm or less, 1,600 mm or more and 1,800 mm or less, or 1,800 mm or more and 2,000 mm or less.

[0256] Fig. 35 is a cross-sectional view of the mask device 15 of Fig. 33 taken along line XXXV-XXXV. Fig. 36 is a cross-sectional view of the mask device 15 of Fig. 33 taken along line XXXVI-XXXVI. As shown in Figs. 35 and 36, the frame 41 is located between the frame first surface 41a and the frame second surface 41b and may include an inner surface 41e facing the opening 43, and an outer surface 41f located opposite the inner surface 41e. As shown in Figs. 35 and 36, the inner surface 41e and the outer surface 41f may extend along a normal direction of the frame first surface 41a.

[0257] The crosspiece 42 will now be described. The crosspiece 42 is connected to the inner surface 41e of the frame 41 and is a region that crosses the opening 43 in a plan view. As shown in FIGS. 33 and 34 , the crosspiece 42 may include a first crosspiece 421 that is connected to the inner surface 41e of the first side 411 of the frame 41. The first crosspiece 421 may extend in the second direction D2. For example, the first side 411 may include a pair of crosspiece side surfaces 42c that extend in the second direction D2 in a plan view, and the crosspiece side surfaces 42c may be connected to the inner surface 41e of the first side 411 of the frame 41. A plurality of first crosspieces 421 may be arranged along the first direction D1. The length of the first side 411 may be the same as the dimension L22 of the opening 43 of the frame 41 in the second direction D2.

[0258] 35 and 36, the first crosspiece 421 may include a crosspiece first surface 42a located on the frame first surface 41a side and a crosspiece second surface 42b located on the opposite side of the crosspiece first surface 42a. The crosspiece first surface 42a may be in contact with the second surface 552 of the mask 50. The first crosspiece 421 can prevent the mask 50 from bending due to its own weight.

[0259] The structure of the boundary between the frame 41 and the crosspiece 42 will be described with reference to Figures 37A and 38A. Figure 37A is an enlarged plan view showing an example of the mask support 40 in the area surrounded by the dotted line and marked with the reference character XXXVIIA in Figure 34. Figure 38A is a cross-sectional view taken along line XXXVIIIA-XXXVIIIA of the mask support 40 in Figure 37A.

[0260] 37A and 38A, the frame first surface 41a of the frame 41 and the crosspiece first surface 42a of the crosspiece 42 may be continuous at the boundary between the frame 41 and the crosspiece 42. For example, both the frame 41 and the crosspiece 42 may be produced by mechanically processing a single plate. In this case, the continuous frame first surface 41a and crosspiece first surface 42a can be formed by processing the plate so that the frame first surface 41a of the frame 41 and the crosspiece first surface 42a of the crosspiece 42 are formed by one surface of the plate.

[0261] Whether the frame first surface 41a of the frame 41 and the crosspiece first surface 42a of the crosspiece 42 are continuous may be determined by whether the frame first surface 41a and the crosspiece first surface 42a are located on the same plane around the boundary between the frame 41 and the crosspiece 42. Specifically, the positions of the frame first surface 41a and the frame second surface 41b in the normal direction of the frame first surface 41a are measured in the region around the boundary between the frame 41 and the crosspiece 42. The region around the boundary is the region of the frame first surface 41a and the frame second surface 41b within a radius S1 centered on the connection point 42e shown in FIG. 37A. If the position of the region around the boundary in the normal direction of the frame first surface 41a is within a range of the average value ± a first threshold, it is determined that the frame first surface 41a and the crosspiece first surface 42a are located on the same plane. The first threshold is, for example, 0.5 mm.

[0262] The connection point 42e described above is the center point of the end 42d of the crosspiece 42. The end 42d is defined as the portion where an extension line of the inner surface 41e of the frame 41 to which the crosspiece 42 is connected in a plan view intersects with the crosspiece 42. In the example shown in FIG. 37A , the end 42d is the portion where an extension line of the inner surface 41e of the first side 411 extending in the first direction D1 intersects with the first crosspiece 421 extending in the second direction D2 in a plan view. The connection point 42e is the center point of the end 42d in the first direction D1 along which the inner surface 41e extends. The radius S1 described above is, for example, 2.5 mm.

[0263] A laser displacement meter LK-G85 manufactured by Keyence Corporation can be used as a measuring instrument to measure the positions of the first frame surface 41a and the second frame surface 41b in the normal direction of the first frame surface 41a. The measurement conditions for the LK-G85 are as follows: Measurement interval: 100μm

[0264] When the frame 41 and the crosspieces 42 are fabricated by mechanically processing a single plate, the connection between the frame 41 and the crosspieces 42 may have a shape resulting from the processing. As shown in FIG. 37A, the mask support 40 includes a first connection portion 42f where the inner surface 41e of the frame 41 and the crosspiece side surface 42c of the crosspiece 42 are connected in a plan view. FIG. 37B is an enlarged plan view of the first connection portion 42f. For example, when processing is performed using a cutting tool, the first connection portion 42f may include a transition portion 42fa. The transition portion 42fa is a portion of the mask support 40 defined by an extension line H1 of the inner surface 41e and an extension line H2 of the crosspiece side surface 42c. The rigidity of the mask support 40 when the first connection portion 42f includes the transition portion 42fa is greater than the rigidity of the mask support 40 when the first connection portion 42f does not include the transition portion 42fa. In other words, the transition portion 42fa can increase the rigidity of the mask support 40.

[0265] The transition portion 42fa may include a curved portion having a first radius of curvature S2. The first radius of curvature S2 may be, for example, 1.0 mm or more, 1.5 mm or more, or 2.0 mm or more. The first radius of curvature S2 may be, for example, 3.0 mm or less, 4.0 mm or less, or 5.0 mm or less. The range of the first radius of curvature S2 may be defined by a first group consisting of 1.0 mm, 1.5 mm, and 2.0 mm and / or a second group consisting of 3.0 mm, 4.0 mm, and 5.0 mm. The range of the first radius of curvature S2 may be defined by a combination of any one of the values ​​included in the first group described above with any one of the values ​​included in the second group described above. The range of the first radius of curvature S2 may be defined by a combination of any two of the values ​​included in the first group described above. The range of the first radius of curvature S2 may be defined by a combination of any two of the values ​​included in the second group described above. For example, the radius of curvature S2 may be 1.0 mm or more and 5.0 mm or less, 1.0 mm or more and 4.0 mm or less, 1.0 mm or more and 3.0 mm or less, 1.0 mm or more and 2.0 mm or less, 1.0 mm or more and 1.5 mm or less, 1.5 mm or more and 5.0 mm or less, 1.5 mm or more and 4.0 mm or less, 1.5 mm or more and 3.0 mm or less, 1.5 mm or more and 2.0 mm or less, 2.0 mm or more and 5.0 mm or less, 2.0 mm or more and 4.0 mm or less, 2.0 mm or more and 3.0 mm or less, 3.0 mm or more and 5.0 mm or less, 3.0 mm or more and 4.0 mm or less, or 4.0 mm or more and 5.0 mm or less. The measuring device for measuring the first radius of curvature S2 may be an AMIC-1710 manufactured by Shinto S Precision.

[0266] Although not shown, the inner surface 41e and the crosspiece surface 42c may be connected without a curved portion.

[0267] As shown in FIG. 38A, in a longitudinal cross-sectional view, the mask support 40 includes a second connection portion 42g connecting the inner surface 41e of the frame 41 and the second crosspiece surface 42b of the crosspiece 42. FIG. 38B is an enlarged cross-sectional view of the second connection portion 42g. For example, when processing is performed using a cutting tool, the second connection portion 42g may include a transition portion 42ga. The transition portion 42ga is a portion of the mask support 40 defined by an extension line H3 of the inner surface 41e and an extension line H4 of the second crosspiece surface 42b. When the second connection portion 42g includes the transition portion 42ga, the rigidity of the mask support 40 is greater than when the second connection portion 42g does not include the transition portion 42ga. In other words, the transition portion 42ga can increase the rigidity of the mask support 40.

[0268] The transition portion 42ga may have a second radius of curvature S3. The second radius of curvature S3 may be, for example, 1.0 mm or more, 1.5 mm or more, or 2.0 mm or more. The second radius of curvature S3 may be, for example, 3.0 mm or less, 4.0 mm or less, or 5.0 mm or less. The range of the second radius of curvature S3 may be defined by a first group consisting of 1.0 mm, 1.5 mm, and 2.0 mm and / or a second group consisting of 3.0 mm, 4.0 mm, and 5.0 mm. The range of the second radius of curvature S3 may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the second radius of curvature S3 may be defined by a combination of any two of the values ​​included in the first group. The range of the second radius of curvature S3 may be defined by a combination of any two of the values ​​included in the second group. For example, the second radius of curvature S3 may be 1.0 mm or more and 5.0 mm or less, 1.0 mm or more and 4.0 mm or less, 1.0 mm or more and 3.0 mm or less, 1.0 mm or more and 2.0 mm or less, 1.0 mm or more and 1.5 mm or less, 1.5 mm or more and 5.0 mm or less, 1.5 mm or more and 4.0 mm or less, 1.5 mm or more and 3.0 mm or less, 1.5 mm or more and 2.0 mm or less, 2.0 mm or more and 5.0 mm or less, 2.0 mm or more and 4.0 mm or less, 2.0 mm or more and 3.0 mm or less, 3.0 mm or more and 5.0 mm or less, 3.0 mm or more and 4.0 mm or less, or 4.0 mm or more and 5.0 mm or less. An AMIC-1710 manufactured by Shinto S Precision can be used as a measuring device for measuring the second radius of curvature S3.

[0269] Although not shown, the inner surface 41e and the crosspiece second surface 42b may be connected without a curved portion.

[0270] The opening 43 will now be described. Because the crosspiece 42 extends across the opening 43, the opening 43 is divided into two or more regions in a plan view. For example, as shown in Fig. 34, the opening 43 includes two or more first openings 43A. The two or more first openings 43A are aligned in the first direction D1.

[0271] 34 , the outline of the first opening 43A may include a pair of first edges 431 extending in the first direction D1 and a pair of second edges 432 extending in the second direction D2. At least one of the pair of first edges 431 may be formed by the inner surface 41e of the first side 411. Either of the pair of first edges 431 may be formed by the inner surface 41e of the first side 411. The second edge 432 may be formed by the inner surface 41e of the second side 412 or the crosspiece side surface 42c of the first crosspiece 421.

[0272] The first opening 43A may overlap the effective area 53 of the mask 50 in a plan view. For example, as shown in Fig. 33, in the state of the mask device 15, two or more effective areas 53 aligned in the second direction D2 may overlap one first opening 43A in a plan view. Two or more effective areas 53 of the mask 50 may overlap one first opening 43A.

[0273] The thickness T2 of the frame 41 may be, for example, 5 mm or more, 10 mm or more, 15 mm or more, or 20 mm or more. The thickness T2 of the frame 41 may be, for example, 25 mm or less, 30 mm or less, 35 mm or less, or 40 mm or less. The range of the thickness T2 of the frame 41 may be defined by a first group consisting of 5 mm, 10 mm, 15 mm, and 20 mm, and / or a second group consisting of 25 mm, 30 mm, 35 mm, and 40 mm. The range of the thickness T2 of the frame 41 may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the thickness T2 of the frame 41 may be defined by a combination of any two of the values ​​included in the first group. The range of the thickness T2 of the frame 41 may be defined by a combination of any two of the values ​​included in the second group. For example, it may be 5 mm or more and 40 mm or less, 5 mm or more and 35 mm or less, 5 mm or more and 30 mm or less, 5 mm or more and 25 mm or less, 5 mm or more and 20 mm or less, 5 mm or more and 15 mm or less, 5 mm or more and 10 mm or less, 10 mm or more and 40 mm or less, 10 mm or more and 35 mm or less, 10 mm or more and 30 mm or less, 10 mm or more and 25 mm or less, 10 mm or more and 20 mm or less, 10 mm or more and 15 mm or less, 15 mm or more and 40 mm or less, It may be 5mm or more and 35mm or less, 15mm or more and 30mm or less, 15mm or more and 25mm or less, 15mm or more and 20mm or more and 20mm or more and 40mm or less, 20mm or more and 35mm or less, 20mm or more and 30mm or more and 20mm or more and 25mm or less, 25mm or more and 40mm or less, 25mm or more and 35mm or less, 25mm or more and 30mm or more and 30mm or more and 40mm or less, 30mm or more and 35mm or less, 35mm or more and 40mm or less.

[0274] By making the thickness T2 of the frame 41 5 mm or more, deformation such as bending of the frame 41 can be suppressed. Furthermore, by making the thickness T2 of the frame 41 40 mm or less, the weight of the frame 41 can be suppressed from becoming excessively large. This improves the handleability of the mask support 40. For example, the mask support 40 can be transported using a small lifter.

[0275] The thickness T3 of the crosspiece 42 may be, for example, 50 μm or more, 100 μm or more, 200 μm or more, or 300 μm or more. The thickness T3 of the crosspiece 42 may be, for example, 500 μm or less, 700 μm or less, 1 mm or less, or 10 mm or less. The range of the thickness T3 of the crosspiece 42 may be defined by a first group consisting of 50 μm, 100 μm, 200 μm, and 300 μm and / or a second group consisting of 500 μm, 700 μm, 1 mm, and 10 mm. The range of the thickness T3 of the crosspiece 42 may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the thickness T3 of the crosspiece 42 may be defined by a combination of any two of the values ​​included in the first group. The range of the thickness T3 of the crosspiece 42 may be determined by a combination of any two of the values ​​included in the second group described above.For example, it may be 50 μm or more and 10 mm or less, 50 μm or more and 1 mm or less, 50 μm or more and 700 μm or less, 50 μm or more and 500 μm or less, 50 μm or more and 300 μm or less, 50 μm or more and 200 μm or less, 50 μm or more and 100 μm or less, 100 μm or more and 10 mm or less, 100 μm or more and 1 mm or less, 100 μm or more and 700 μm or less, 100 μm or more and 500 μm or less, 100 μm or more and 300 μm or less, 100 μm or more and 200 μm or more and 10 mm or less. Alternatively, it may be 200 μm or more and 1 mm or less, 200 μm or more and 700 μm or less, 200 μm or more and 500 μm or less, 200 μm or more and 300 μm or less, 300 μm or more and 10 mm or less, 300 μm or more and 1 mm or less, 300 μm or more and 700 μm or less, 300 μm or more and 500 μm or less, 500 μm or more and 10 mm or less, 500 μm or more and 1 mm or less, 500 μm or more and 700 μm or less, 700 μm or more and 10 mm or less, 700 μm or more and 1 mm or less, or 1 mm or more and 10 mm or less.

[0276] The thickness T3 of the crosspiece 42 may be smaller than the thickness T2 of the frame 41. The thicker the crosspiece 42, the greater the amount of vapor deposition material that adheres to the crosspiece 42 during the vapor deposition process. By making the thickness T3 of the crosspiece 42 smaller than the thickness T2 of the frame 41, it is possible to prevent the crosspiece 42 from interfering with the vapor deposition. Therefore, from the viewpoint of vapor deposition efficiency, it is preferable that the thickness T3 of the crosspiece 42 is small.

[0277] On the one hand, the greater the thickness T3 of the cross member 42, the higher the rigidity of the cross member 42. In the present embodiment, the frame 41 and the cross member 42 are integrally formed. Therefore, an increase in the rigidity of the cross member 42 leads to suppression of deformation of the frame 41. However, the greater the thickness T3 of the cross member 42, the greater the weight of the cross member 42. The increase in the weight of the cross member 42 leads to deformation of the frame 41 toward the inside. This is because the frame 41 is pulled by the gravitational force acting on the cross member 42. The inside means the direction from the frame 41 toward the center of the opening 43. When increasing the thickness T3 of the cross member 42 to suppress deformation of the frame 41, it is preferable to consider not only the rigidity of the cross member 42 but also the deformation of the frame 41 caused by the increase in the weight of the cross member 42.

[0278] As shown in the examples described later, the amount of deformation of the frame 41 may have a minimum value determined in relation to the thickness T3 of the cross member 42. When the amount of deformation of the frame 41 is at the minimum value, the amount of suppression of deformation of the frame 41 based on the rigidity of the cross member 42 and the amount of deformation of the frame 41 based on the self-weight of the cross member 42 are in balance. The thickness T3 when the amount of deformation of the frame 41 becomes the minimum value is also referred to as the conversion thickness. When the thickness T3 is less than or equal to the conversion thickness, the greater the thickness T3 of the cross member 42, the smaller the amount of deformation of the frame 41. On the other hand, when the thickness T3 is greater than the conversion thickness, the greater the thickness T3 of the cross member 42, the greater the amount of deformation of the frame 41.

[0279] The ratio of the thickness T3 to the thickness T2 when the amount of deformation of the frame 41 becomes the minimum value is also referred to as the conversion ratio. The conversion ratio may exist in the range of 0 < T3 / T2 < 1.

[0280] For example, T3 / T2 may be 0.1 or greater, 0.2 or greater, 0.3 or greater, or 0.4 or greater. T3 / T2 may be 0.5 or less, 0.6 or less, 0.7 or less, or 0.85 or less. The range of T3 / T2 may be determined by a first group consisting of 0.1, 0.2, 0.3, and 0.4, and / or a second group consisting of 0.5, 0.6, 0.7, and 0.85. The range of T3 / T2 may be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of T3 / T2 may be determined by a combination of any two of the values ​​included in the first group. The range of T3 / T2 may be determined by a combination of any two of the values ​​included in the second group. For example, it may be 0.1 or more and 0.85 or less, 0.1 or more and 0.7 or less, 0.1 or more and 0.6 or less, 0.1 or more and 0.5 or less, 0.1 or more and 0.4 or less, 0.1 or more and 0.3 or less, 0.1 or more and 0.2 or less, 0.2 or more and 0.85 or less, 0.2 or more and 0.7 or less, 0.2 or more and 0.6 or less, 0.2 or more and 0.5 or less, 0.2 or more and 0.4 or less, 0.2 or more and 0.3 or less, or 0.3 or more and 0.85 or less. Alternatively, it may be 0.3 or more and 0.7 or less, 0.3 or more and 0.6 or less, 0.3 or more and 0.5 or less, 0.3 or more and 0.4 or less, 0.4 or more and 0.85 or less, 0.4 or more and 0.7 or less, 0.4 or more and 0.6 or less, 0.4 or more and 0.5 or less, 0.5 or more and 0.85 or less, 0.5 or more and 0.7 or less, 0.5 or more and 0.6 or less, 0.6 or more and 0.85 or less, 0.6 or more and 0.7 or less, or 0.7 or more and 0.85 or less.

[0281] A contact-type measurement method is used to measure the thickness T of the metal plate 55, the thickness T2 of the frame 41, and the thickness T3 of the crosspiece 42. For the contact-type measurement method, a length gauge "MT271" by HEIDENHAIM-METRO, manufactured by Heidenhain, equipped with a ball bush guide type plunger, is used.

[0282] A method for manufacturing the above-mentioned mask device 15 will be described below. First, an example of a method for manufacturing the mask support 40 will be described.

[0283] First, as shown in FIG. 39, a plate 47 may be prepared, including a first surface 47a and a second surface 47b located on the opposite side of the first surface 47a. The material of the plate 47 may be the same as that of the metal plate 55 of the mask 50. For example, an iron alloy containing nickel may be used as the material of the plate 47. The thickness T0 of the plate 47 is equal to or greater than the thickness T2 of the frame 41. The thickness T0 of the plate 47 may be the same as the thickness T2 of the frame 41. In FIG. 39, the point marked with the symbol 42d indicates the position where the end 42d appears, where the frame 41 and the crosspiece 42 are connected.

[0284] Next, a processing step may be performed in which a central region 47d of the plate 47, which is located more inward than the end 42d, is processed from the second surface 47b side using a cutting tool or processing machine. As shown in FIG. 40, the processing step may include a first processing step in which the plate 47 is processed until the thickness T4 of the central region 47d becomes equal to the thickness T3 of the crosspiece 42. FIG. 41 is a plan view showing the plate 47 shown in FIG. 40 as viewed from the second surface 47b side. A drill, a cutting tool, a milling cutter, an end mill, or the like can be used as a cutting tool for performing the first processing step. The processing method performed by the processing machine may be laser processing, water plasma processing, wire cutting, or the like.

[0285] The processing step may include a second processing step in which an opening extending from the second surface 47b to the first surface 47a is partially formed in the central region 47d by using a cutting tool or processing machine to process the central region 47d from the second surface 47b side. In this case, the remaining area of ​​the central region 47d without the opening forms the crosspiece 42. Examples of cutting tools that can be used for the second processing step include drills, turning tools, milling cutters, and end mills. Examples of processing methods that can be used with the processing machine include laser processing, water plasma processing, and wire cutting.

[0286] In this manner, a mask support 40 including a frame 41 and a crosspiece 42 can be manufactured as shown in Fig. 34. The second processing step may be performed after the first processing step, or the second processing step may be performed before the first processing step.

[0287] Subsequently, a fixing step may be performed to fix the mask 50 to the second side 412 of the frame 41. For example, the end 51 of the mask 50 may be fixed to the frame first surface 41a of the second side 412 while applying tension Tx to the mask 50 in the first direction D1. A welding method, for example, may be used to fix the mask 50 to the frame 41. A laser beam may be used in the welding method. The laser beam may be irradiated onto the end 51. The irradiated end 51 may be melted, thereby welding the end 51 to the frame first surface 41a of the second side 412. In this manner, a mask device 15 including a mask support 40 and a mask 50 can be manufactured, as shown in FIG. 33 .

[0288] In the embodiment of the present disclosure, as described above, the mask support 40 is fabricated by mechanically processing a single plate 47. Therefore, the frame 41 and the crosspieces 42 of the mask support 40 are integrally configured. This improves the rigidity of the mask support 40 in the direction in which the crosspieces 42 extend, compared to when the frame 41 and the crosspieces 42 are separate components. For example, when the crosspieces 42 include first crosspieces 421 extending in the second direction D2, the rigidity of the mask support 40 in the second direction D2 can be improved. This can prevent the frame 41 of the mask support 40 from deforming in the second direction D2 due to, for example, a force applied to the mask support 40 from the mask 50. This prevents the positions of the through-holes 56 of the mask 50, which are fixed to the frame 41, from shifting from their designed positions. The designed positions refer to ideal positions of the through-holes 56.

[0289] 42 is a cross-sectional view showing a portion of the mask 50 of the mask device 15 combined with the substrate 110. According to the embodiment of the present disclosure, it is possible to prevent the positions of the through-holes 56 of the mask 50 from being shifted from the designed positions. This makes it possible to improve the positional accuracy of the first deposition layer 130 made of the deposition material deposited on the substrate 110 through the through-holes 56.

[0290] An example of the advantage of high positional accuracy of the first deposited layer 130 will be described. When the organic device 100 includes an insulating layer 160 as shown in FIG. 42 , the dimensions of the insulating layer 160 in the surface direction of the substrate 110 may be set based on the positional accuracy of the first deposited layer 130 in the deposition process. For example, the dimensions of the insulating layer 160 may be set smaller as the positional accuracy of the first deposited layer 130 increases. When the pixel density of the organic device 100 is constant, the areas of the first electrode layer 120 and the first deposited layer 130 can be increased as the dimensions of the insulating layer 160 decrease. This increases the driving efficiency of the organic device 100 and extends the life of the organic device 100.

[0291] When the first frame surface 41a of the frame 41 and the first crosspiece surface 42a of the crosspiece 42 are positioned on the same plane, there is an advantage in that it becomes easier to control the position of the surface of the mask 50 supported from below by the crosspiece 42 relative to the first frame surface 41a of the frame 41. This makes it easier to control the distance Z1 between the first surface 551 of the mask 50 and the first surface 111 of the substrate 110 in the vapor deposition process, as shown in FIG. 42 . This makes it easier to suppress or adjust shadows in the vapor deposition process, for example.

[0292] Next, a comparison will be made between the case where frame 41 and first crosspiece 421 are integrally formed as in this embodiment and the case where first crosspiece 421 is formed of a member separate from frame 41 as in the above-described FIG. 13A.

[0293] Fig. 43 is a cross-sectional view of the mask device 15 of Fig. 13A cut along the second direction D2. The first crosspiece 421 of the mask device 15 of Fig. 13A is fixed to the first frame surface 41a side of the first side 411 of the frame 41 by welding. Therefore, the contribution of the first crosspiece 421 of Fig. 13A to the rigidity of the mask support 40 in the second direction D2 is small compared to the first crosspiece 421 of Fig. 33.

[0294] Furthermore, since the first crosspiece 421 in FIG. 13A is a separate component from the frame 41, a misalignment may occur between the frame first surface 41a and the crosspiece first surface 42a of the first crosspiece 421 in the normal direction of the frame first surface 41a of the frame 41.

[0295] 33, the frame 41 and the crosspieces 42 are integrally configured, which effectively improves the rigidity of the mask support 40 in the direction in which the crosspieces 42 extend. In addition, the first frame surface 41a of the frame 41 and the first crosspiece surfaces 42a of the crosspieces 42 are located on the same plane, which makes it easier to control the position of the surface of the mask 50 relative to the first frame surface 41a of the frame 41.

[0296] The second embodiment described above can be modified in various ways. Other embodiments will be described below with reference to the drawings as necessary. In the following description and the drawings used in the following description, parts that can be configured similarly to the above embodiment will be designated by the same reference numerals as those used for the corresponding parts in the above embodiment. Duplicate descriptions will be omitted. Furthermore, if it is clear that the effects obtained in the above embodiment can also be obtained in the following embodiment, the description may be omitted.

[0297] FIG. 44 is a plan view showing an example of the mask device 15 as viewed from the first surface 551 side of the mask 50. FIG. 45 is a view showing a state in which the mask 50 is removed from the mask device 15 of FIG. 44. The crosspiece 42 may include a second crosspiece 422 connected to the inner surface 41e of the second side 412 of the frame 41. The second crosspiece 422 may extend in the first direction D1. For example, the second crosspiece 422 may include a pair of crosspiece side surfaces 42c extending in the first direction D1 in a plan view, and the crosspiece side surfaces 42c may be connected to the inner surface 41e of the second side 412 of the frame 41. A plurality of second crosspieces 422 may be arranged along the second direction D2. The length of the second crosspiece 422 may be the same as the dimension L21 of the opening 43 of the frame 41 in the first direction D1.

[0298] Fig. 46 is a cross-sectional view of the mask device 15 of Fig. 44 taken along line XXXXVI-XXXXVI. Fig. 47 is a cross-sectional view of the mask device 15 of Fig. 44 taken along line XXXXVII-XXXXVII. The second crosspiece 422 may overlap the gap between two masks 50 adjacent to each other in the second direction D2 in plan view. Providing the second crosspiece 422 can prevent the deposition material that has passed through the gap between the two masks 50 from adhering to the substrate 110.

[0299] The first crosspiece surface 42a of the second crosspiece 422 may be in contact with the second surface 552 of the mask 50. Similar to the first side 411 described above, the second crosspiece 422 can also prevent the mask 50 from bending due to its own weight.

[0300] The structure of the boundary between the second side 412 of the frame 41 and the second crosspiece 422 of the crosspiece 42 will be described with reference to Figures 48A and 49A. Figure 48A is an enlarged plan view showing an example of the mask support 40 in the area surrounded by the dotted line and marked with the symbol XXXXVIIIA in Figure 45. Figure 49A is a cross-sectional view taken along line XXXXIXA-XXXXIXA of the mask support 40 in Figure 48A.

[0301] 48A and 49A, the frame first surface 41a of the frame 41 and the crosspiece first surface 42a of the crosspiece 42 may be continuous at the boundary between the frame 41 and the crosspiece 42. For example, similar to the first side 411, the frame first surface 41a and the crosspiece first surface 42a may be located on the same plane around the boundary between the second side 412 of the frame 41 and the second crosspiece 422 of the crosspiece 42.

[0302] As shown in Fig. 48A, the mask support 40 includes, in a plan view, a first connection portion 42f that connects the inner surface 41e of the second side 412 of the frame 41 and the crosspiece side surface 42c of the second crosspiece 422 of the crosspiece 42. Fig. 48B is a plan view showing an enlarged view of the first connection portion 42f. For example, when processing is performed using a cutting tool, the first connection portion 42f may include a transition portion 42fa, as in the above-described embodiment. The transition portion 42fa may include a curved portion having a first radius of curvature S2.

[0303] As shown in Fig. 49A, in a longitudinal cross section, the mask support 40 includes a second connection portion 42g that connects the inner surface 41e of the second side 412 of the frame 41 and the second bar surface 42b of the second bar 422 of the bar 42. Fig. 49B is a cross-sectional view showing an enlarged view of the second connection portion 42g. For example, when processing is performed using a cutting tool, the second connection portion 42g may include a transition portion 42ga, as in the above-described embodiment. The transition portion 42ga may include a curved portion having a second radius of curvature S3.

[0304] The opening 43 will now be described. Because the crosspiece 42 extends across the opening 43, the opening 43 is divided into two or more regions in a plan view. For example, as shown in Fig. 45, the opening 43 includes two or more second openings 43B. The two or more second openings 43B are aligned in the second direction D2.

[0305] 45 , the outline of the second opening 43B may include a pair of first edges 431 extending in the first direction D1 and a pair of second edges 432 extending in the second direction D2. The first edges 431 may be formed by the inner surface 41 e of the first side 411 or the crosspiece side surface 42 c of the second crosspiece 422. At least one of the pair of second edges 432 may be formed by the inner surface 41 e of the second side 412. Both of the pair of second edges 432 may be formed by the inner surface 41 e of the second side 412.

[0306] The second opening 43B may overlap the effective area 53 of the mask 50 in a plan view. In the state of the mask device 15, two or more effective areas 53 aligned in the first direction D1 may overlap one second opening 43B in a plan view. Two or more effective areas 53 of one mask 50 may overlap one second opening 43B.

[0307] The mask support 40 shown in FIGS. 44 to 49B can be fabricated by mechanically processing a single plate, similar to the mask support 40 of the second embodiment described above. Therefore, the frame 41 and the crosspieces 42 of the mask support 40 are integrally configured. This improves the rigidity of the mask support 40 in the direction in which the crosspieces 42 extend, compared to when the frame 41 and the crosspieces 42 are separate components. For example, when the crosspieces 42 include second crosspieces 422 extending in the first direction D1, the rigidity of the mask support 40 in the first direction D1 can be improved. Therefore, for example, deformation of the frame 41 of the mask support 40 in the first direction D1 due to a force applied to the mask support 40 from the mask 50 can be prevented. This prevents the positions of the through-holes 56 of the mask 50, which are fixed to the frame 41, from shifting from their designed positions.

[0308] Furthermore, when the first frame surface 41a of the second side 412 of the frame 41 and the first crosspiece surface 42a of the second crosspiece 422 of the crosspiece 42 are positioned on the same plane, it becomes easier to control the position of the surface of the mask 50 supported from below by the crosspiece 42 with respect to the first frame surface 41a of the frame 41. This makes it easier to control the distance Z1 between the first surface 551 of the mask 50 and the first surface 111 of the substrate 110. This makes it easier to suppress or adjust shadows in the vapor deposition process, for example.

[0309] As in the above-described embodiment, the thickness T3 of the crosspiece 42 may be smaller than the thickness T2 of the frame 41. T3 / T2 may be, for example, 0.1 or greater, 0.2 or greater, 0.3 or greater, or 0.4 or greater. T3 / T2 may be, for example, 0.5 or less, 0.6 or less, 0.7 or less, or 0.85 or less. The range of T3 / T2 may be defined by a first group consisting of 0.1, 0.2, 0.3, and 0.4 and / or a second group consisting of 0.5, 0.6, 0.7, and 0.85. The range of T3 / T2 may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of T3 / T2 may be defined by a combination of any two of the values ​​included in the first group. The range of T3 / T2 may be defined by a combination of any two of the values ​​included in the second group. For example, it may be 0.1 or more and 0.85 or less, 0.1 or more and 0.7 or less, 0.1 or more and 0.6 or less, 0.1 or more and 0.5 or less, 0.1 or more and 0.4 or less, 0.1 or more and 0.3 or less, 0.1 or more and 0.2 or less, 0.2 or more and 0.85 or less, 0.2 or more and 0.7 or less, 0.2 or more and 0.6 or less, 0.2 or more and 0.5 or less, 0.2 or more and 0.4 or less, 0.2 or more and 0.3 or less, or 0.3 or more and 0.85 or less. Alternatively, it may be 0.3 or more and 0.7 or less, 0.3 or more and 0.6 or less, 0.3 or more and 0.5 or less, 0.3 or more and 0.4 or less, 0.4 or more and 0.85 or less, 0.4 or more and 0.7 or less, 0.4 or more and 0.6 or less, 0.4 or more and 0.5 or less, 0.5 or more and 0.85 or less, 0.5 or more and 0.7 or less, 0.5 or more and 0.6 or less, 0.6 or more and 0.85 or less, 0.6 or more and 0.7 or less, or 0.7 or more and 0.85 or less.

[0310] Other examples of the mask device 15 will be described with reference to Figures 50 to 53. Here, a case will be described in which the mask device 15 includes a second crosspiece 422 that is configured from a member separate from the frame 41.

[0311] Fig. 50 is a plan view showing an example of the mask device 15. Fig. 51 is a plan view showing the mask device 15 of Fig. 50 with the mask 50 removed. Fig. 52 is a cross-sectional view of the mask device 15 of Fig. 50 taken along line XXXXXII-XXXXXII. The second crosspieces 422 of the mask device 15 of Figs. 50 to 52 are fixed to the first frame surface 41a side of the second side 412 of the frame 41 by welding. Therefore, compared to the above-mentioned crosspieces 42 that are integrally formed with the frame 41, the contribution of the second crosspieces 422 of Figs. 50 to 52 to the rigidity of the mask support 40 in the first direction D1 is small.

[0312] 50 to 52 are fixed to the second side 412 of the frame 41 by welding, the welded area of ​​the second crosspiece 422 may overlap the mask 50. FIG. 53 is an enlarged cross-sectional view showing the welded area 42x of the second crosspiece 422 and its surroundings. If the welded area 42x of the second crosspiece 422 protrudes upward from the first frame surface 41a of the frame 41 as shown in FIG. 53, a portion of the mask 50 is pressed upward by the welded area 42x. In this case, as shown in FIG. 53, a gap may easily occur between the second surface 552 of the mask 50 and the first crosspiece surface 42a of the second crosspiece 422.

[0313] 44 to 49B, the frame 41 and the crosspieces 42 are integrally configured, which effectively improves the rigidity of the mask support 40 in the direction in which the crosspieces 42 extend. In addition, the first frame surface 41a of the frame 41 and the first crosspiece surfaces 42a of the crosspieces 42 are located on the same plane, which makes it easier to control the position of the surface of the mask 50 relative to the first frame surface 41a of the frame 41.

[0314] An example in which the mask support 40 of the mask device 15 includes both the first and second bars 421 and 422 described above will be described with reference to FIGS.

[0315] Fig. 54 is a plan view showing an example of the mask device 15. Fig. 55 is a plan view showing the mask device 15 of Fig. 54 with the mask 50 removed. The crosspiece 42 may include a first crosspiece 421 connected to the first side 411 of the frame 41 and a second crosspiece 422 connected to the second side 412 of the frame 41. The first crosspiece 421 may extend in the second direction D2 from one first side 411 to the other first side 411. The second crosspiece 422 may extend in the first direction D1 from one second side 412 to the other second side 412.

[0316] Figure 56 is a cross-sectional view of the mask device 15 taken along line XXXXXVI-XXXXXVI in Figure 54. Figure 57 is a cross-sectional view of the mask device 15 taken along line XXXXXVII-XXXXXVII in Figure 54. The first bars 421 and the second bars 422 may be in contact with the second surface 552 of the mask 50.

[0317] At the boundary between the frame 41 and the crosspiece 42, the first frame surface 41a of the frame 41 and the first crosspiece surface 42a of the crosspiece 42 may be continuous. The structure of the boundary between the first side 411 of the frame 41 and the first crosspiece 421 of the crosspiece 42 is similar to that in the embodiment described above and shown in Figures 37A and 38A, so a description thereof will be omitted. The structure of the boundary between the second side 412 of the frame 41 and the second crosspiece 422 of the crosspiece 42 is similar to that in the embodiment described above and shown in Figures 48A and 49A, so a description thereof will be omitted.

[0318] The structure of the connection portion between the first bar 421 and the second bar 422 of the bar 42 will be described with reference to Fig. 58A. Fig. 58A is an enlarged plan view showing an example of the mask support 40 in the area surrounded by the dotted line and marked with the reference character XXXXXVIIIA in Fig. 55.

[0319] The first crosspiece surface 42a of the first crosspiece 421 and the first crosspiece surface 42a of the second crosspiece 422 may be located on the same plane. For example, as shown in FIG. 58A, in an area within a radius S4 centered on the intersection 42i between the first crosspiece 421 and the second crosspiece 422, the position of the first crosspiece surface 42a in the normal direction is within a range of the average value ± a second threshold value. The second threshold value is, for example, 0.5 μm. The radius S4 is, for example, 10 mm.

[0320] As shown in FIG. 58A, the mask support 40 includes, in a plan view, a third connection portion 42h that connects the bar side surface 42c of the first bar 421 and the bar side surface 42c of the second bar 422 of the frame 41. FIG. 58B is an enlarged plan view of the third connection portion 42h. For example, when processing is performed using a cutting tool, the third connection portion 42h may include a transition portion 42ha. The transition portion 42ha is a portion of the bar 42 defined by an extension line H5 of the bar side surface 42c of the first bar 421 and an extension line H6 of the bar side surface 42c of the second bar 422. When the third connection portion 42h includes the transition portion 42ha, the rigidity of the bar 42 is greater than when the third connection portion 42h does not include the transition portion 42ha. In other words, the transition portion 42ha can increase the rigidity of the bar 42.

[0321] The transition portion 42ha may include a curved portion having a third radius of curvature S5. The third radius of curvature S5 may be, for example, 10 μm or more, 100 μm or more, 1 mm or more, or 2 mm or more. The third radius of curvature S5 may be, for example, 3 mm or less, 5 mm or less, 10 mm or less, or 20 mm or less. The range of the third radius of curvature S5 may be defined by a first group consisting of 10 μm, 100 μm, 1 mm, and 2 mm, and / or a second group consisting of 3 mm, 5 mm, 10 mm, and 20 mm. The range of the third radius of curvature S5 may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the third radius of curvature S5 may be defined by a combination of any two of the values ​​included in the first group. The range of the third radius of curvature S5 may be defined by a combination of any two of the values ​​included in the second group. For example, it may be 10 μm or more and 20 mm or less, 10 μm or more and 10 mm or less, 10 μm or more and 5 mm or less, 10 μm or more and 3 mm or less, 10 μm or more and 2 mm or less, 10 μm or more and 1 mm or less, 10 μm or more and 100 μm or more and 100 μm or more and 20 mm or less, 100 μm or more and 10 mm or less, 100 μm or more and 5 mm or less, 100 μm or more and 3 mm or less, 100 μm or more and 2 mm or less, 100 μm or more and 1 mm or less, or 1 mm or more and 20 mm m or less, may be 1 mm or more and 10 mm or less, may be 1 mm or more and 5 mm or less, may be 1 mm or more and 3 mm or less, may be 1 mm or more and 2 mm or less, may be 2 mm or more and 20 mm or less, may be 2 mm or more and 10 mm or less, may be 2 mm or more and 5 mm or less, may be 2 mm or more and 3 mm or less, may be 3 mm or more and 20 mm or less, may be 3 mm or more and 10 mm or less, may be 3 mm or more and 5 mm or less, may be 5 mm or more and 20 mm or less, may be 5 mm or more and 10 mm or less, may be 10 mm or more and 20 mm or less.The measuring device used to measure the third radius of curvature S3 is the AMIC-1710 manufactured by Shinto S Precision.

[0322] The opening 43 will now be described. In the present embodiment as well, the opening 43 is divided into two or more regions by the crosspieces 42 in a plan view. For example, as shown in Fig. 55, the opening 43 includes a plurality of third openings 43C. The plurality of third openings 43C are aligned in the first direction D1 and the second direction D2.

[0323] 55, the contour of the third opening 43C may include a pair of first edges 431 extending in the first direction D1 and a pair of second edges 432 extending in the second direction D2. Both of the pair of first edges 431 may be formed by the bar side surface 42c of the second bar 422. Both of the pair of second edges 432 may be formed by the bar side surface 42c of the first bar 421.

[0324] The third opening 43C may overlap the effective area 53 of the mask 50 in a planar view. In the state of the mask device 15, one effective area 53 may overlap one third opening 43C in a planar view. In a planar view, two or more effective areas 53 may overlap one third opening 43C. For example, two or more effective areas 53 aligned in the first direction D1 may overlap one third opening 43C. For example, two or more effective areas 53 aligned in the second direction D2 may overlap one third opening 43C.

[0325] The mask support 40 shown in FIGS. 54 to 58A can be fabricated by mechanically processing a single plate, similar to the mask support 40 of the above-described embodiment shown in FIGS. 1 to 42 and 44 to 49A. Therefore, the frame 41 and the crosspieces 42 of the mask support 40 are integrally formed. This improves the rigidity of the mask support 40 in the direction in which the crosspieces 42 extend, compared to when the frame 41 and the crosspieces 42 are separate components. For example, when the crosspieces 42 include second crosspieces 422 extending in the first direction D1 and first crosspieces 421 extending in the second direction D2, the rigidity of the mask support 40 in the first direction D1 and the second direction D2 can be improved. Therefore, for example, deformation of the frame 41 of the mask support 40 in the first direction D1 and the second direction D2 due to a force applied to the mask support 40 from the mask 50 can be prevented. This prevents the positions of the through-holes 56 of the mask 50, which are fixed to the frame 41, from shifting from their designed positions.

[0326] Furthermore, because the mask support 40 is fabricated by mechanically processing a single plate, the first crosspiece surface 42a of the first crosspiece 421 of the crosspiece 42 and the first crosspiece surface 42a of the second crosspiece 422 can be continuous. For example, the first crosspiece surface 42a of the first crosspiece 421 and the first crosspiece surface 42a of the second crosspiece 422 can be positioned on the same plane. This makes it easier to control the position of the surface of the mask 50, which is supported from below by the crosspiece 42, relative to the first frame surface 41a of the frame 41. This makes it easier to control the distance Z1 between the first surface 551 of the mask 50 and the first surface 111 of the substrate 110. This makes it easier to suppress or adjust shadows during the vapor deposition process, for example.

[0327] As in the above-described embodiment, the thickness T3 of the crosspiece 42 may be smaller than the thickness T2 of the frame 41. T3 / T2 may be, for example, 0.1 or greater, 0.2 or greater, 0.3 or greater, or 0.4 or greater. T3 / T2 may be, for example, 0.5 or less, 0.6 or less, 0.7 or less, or 0.85 or less. The range of T3 / T2 may be defined by a first group consisting of 0.1, 0.2, 0.3, and 0.4 and / or a second group consisting of 0.5, 0.6, 0.7, and 0.85. The range of T3 / T2 may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of T3 / T2 may be defined by a combination of any two of the values ​​included in the first group. The range of T3 / T2 may be defined by a combination of any two of the values ​​included in the second group. For example, it may be 0.1 or more and 0.85 or less, 0.1 or more and 0.7 or less, 0.1 or more and 0.6 or less, 0.1 or more and 0.5 or less, 0.1 or more and 0.4 or less, 0.1 or more and 0.3 or less, 0.1 or more and 0.2 or less, 0.2 or more and 0.85 or less, 0.2 or more and 0.7 or less, 0.2 or more and 0.6 or less, 0.2 or more and 0.5 or less, 0.2 or more and 0.4 or less, 0.2 or more and 0.3 or less, or 0.3 or more and 0.85 or less. Alternatively, it may be 0.3 or more and 0.7 or less, 0.3 or more and 0.6 or less, 0.3 or more and 0.5 or less, 0.3 or more and 0.4 or less, 0.4 or more and 0.85 or less, 0.4 or more and 0.7 or less, 0.4 or more and 0.6 or less, 0.4 or more and 0.5 or less, 0.5 or more and 0.85 or less, 0.5 or more and 0.7 or less, 0.5 or more and 0.6 or less, 0.6 or more and 0.85 or less, 0.6 or more and 0.7 or less, or 0.7 or more and 0.85 or less.

[0328] Other examples of the mask device 15 will be described with reference to Figures 59 to 62. Here, the case where the mask device 15 includes a first crosspiece 421 and a second crosspiece 422 that are formed from members separate from the frame 41 will be described.

[0329] 59 and 60 are both plan views showing a mask support 40 including a first crosspiece 421 and a second crosspiece 422 that are formed from members separate from the frame 41. In the example shown in Fig. 59, the first crosspiece 421 is located between the first frame surface 41a of the frame 41 and the second crosspiece 422. In the example shown in Fig. 60, the second crosspiece 422 is located between the first frame surface 41a of the frame 41 and the first crosspiece 421.

[0330] Figure 61 is a cross-sectional view showing a mask device 15 including the mask support 40 shown in Figure 59, cut along line XXXXXXI-XXXXXXI in Figure 59. In the configuration shown in Figures 59 and 61, the second crosspiece 422 is located between the first crosspiece 421 and the second surface 552 of the mask 50. In this case, the end of the mask 50 in the second direction D2 is in contact with the second crosspiece 422 and is therefore supported from below, but the center of the mask 50 in the second direction D2 is not in contact with anything. For this reason, it is conceivable that the mask 50 will bend along the second direction D2, which is the width direction of the mask 50.

[0331] Figure 62 is a cross-sectional view showing a mask device 15 including the mask support 40 shown in Figure 60, cut along line XXXXXXII-XXXXXXII in Figure 60. In the configuration shown in Figures 60 and 62, the first bar 421 is located between the second bar 422 and the second surface 552 of the mask 50. Therefore, a gap corresponding to the thickness of the first bar 421 is generated in the thickness direction of the mask 50 between the gap between two masks 50 adjacent to each other in the second direction D2 and the second bar 422.

[0332] In contrast, in the examples shown in FIGS. 54 to 58B, the frame 41 and the crosspieces 42 are integrally configured. This effectively improves the rigidity of the mask support 40 in the direction in which the crosspieces 42 extend. Furthermore, the first crosspieces 421 and the second crosspieces 422 of the crosspieces 42 are integrally configured. This allows the first crosspiece surfaces 42a of the first crosspieces 421 and the first crosspiece surfaces 42a of the second crosspieces 422 to be positioned on the same plane. This prevents gaps from being generated between the first crosspieces 421 and the second crosspieces 422 of the crosspieces 42 and the second surface 552 of the mask 50. This allows the crosspieces 42 to effectively support the mask 50 from below. This also prevents the vapor deposition material from entering the gaps between the second surface 552 of the mask 50 and the crosspieces 42.

[0333] Fig. 63 is a cross-sectional view showing an example of the mask device 15 cut along the second direction D2. As shown in Fig. 63, the second bar 422 of the bar 42 may include a portion in which the width WA3 of the bar 42 decreases toward the bar second surface 42b in the thickness direction of the bar 42. Furthermore, the width WA31 of the bar 42 at the bar first surface 42a may be larger than the width WA32 of the bar 42 at the bar second surface 42b.

[0334] The width WA3 of the crosspiece 42 decreases toward the crosspiece second surface 42b in the thickness direction of the crosspiece 42, thereby preventing the deposition material from adhering to the crosspiece 42 during the deposition process. In addition, the width WA31 of the crosspiece 42 at the crosspiece first surface 42a is increased, thereby improving the rigidity of the crosspiece 42. Therefore, according to the embodiment shown in FIG. 63, for example, the rigidity of the crosspiece 42 can be maintained while preventing the deposition material from adhering to the crosspiece 42 during the deposition process.

[0335] Fig. 64 is a cross-sectional view showing an example of the mask device 15 cut along the first direction D1. As shown in Fig. 64, the first bar 421 of the bar 42 may include a portion in which the width WA3 of the bar 42 decreases toward the bar second surface 42b in the thickness direction of the bar 42. The width WA31 of the bar 42 at the bar first surface 42a may be larger than the width WA32 of the bar 42 at the bar second surface 42b.

[0336] According to the embodiment shown in FIG. 64, similarly to the embodiment shown in FIG. 63, it is possible to prevent the deposition material from adhering to the crosspiece 42 during the deposition process while maintaining the rigidity of the crosspiece 42.

[0337] 65, the first side 411 of the frame 41 may include a frame third surface 41h that is located between the frame first surface 41a and the frame second surface 41b in the thickness direction of the frame 41 and that is located outward from the frame first surface 41a in a plan view. Furthermore, the inner surface 41e of the first side 411 may include an inclined surface 41g that displaces outward as it approaches the frame second surface 41b in the thickness direction of the frame 41. The "outward" refers to the side that is away from the center point of the opening 43 of the frame 41 in a plan view.

[0338] The inclined surface 41g on the inner surface 41e of the first side 411 can prevent the deposition material from adhering to the inner surface 41e of the first side 411 during the deposition process.

[0339] 66, the second side 412 of the frame 41 may include a frame third surface 41h that is located between the frame first surface 41a and the frame second surface 41b in the thickness direction of the frame 41 and is located outward of the frame first surface 41a in a plan view. The inner surface 41e of the second side 412 may include an inclined surface 41g that displaces outward as it approaches the frame second surface 41b in the thickness direction of the frame 41.

[0340] By including the inclined surface 41g on the inner surface 41e of the second side 412, it is possible to prevent the deposition material from adhering to the inner surface 41e of the first side 411 during the deposition process, similar to the case of the first side 411 shown in FIG.

[0341] 67 is a plan view showing an example of the standard mask device 15A. The standard mask device 15A may include the above-mentioned mask support 40 in which the frame 41 and the crosspiece 42 are integrally formed.

[0342] The standard mask apparatus 15A is used to evaluate the characteristics of the first vapor deposition chamber 10. Therefore, high precision is required for the components of the standard mask apparatus 15A. As described above, the mask support 40, which includes the integrally formed frame 41 and crosspieces 42, has higher rigidity in the direction in which the crosspieces 42 extend than when the frame 41 and crosspieces 42 are separate components. Therefore, deformation of the frame 41 of the mask support 40 in the second direction D2 due to the force applied to the mask support 40 from the standard mask 50A can be suppressed. This prevents the positions of the through-holes 56 of the standard mask 50A from shifting from their designed positions. This allows for more accurate evaluation of the characteristics of the first vapor deposition chamber 10.

[0343] When the first frame surface 41a of the frame 41 and the first crosspiece surface 42a of the crosspiece 42 are positioned on the same plane, it becomes easier to control the position of the surface of the standard mask 50A supported from below by the crosspiece 42 relative to the first frame surface 41a of the frame 41. This makes it easier to control the distance Z1 between the first surface 551 of the mask 50 and the first surface 111 of the substrate 110 during the deposition process. This makes it easier to suppress or adjust shadows during the deposition process, for example. This allows for more accurate evaluation of the characteristics of the first deposition chamber 10.

[0344] 67, the crosspiece 42 of the mask support 40 of the standard mask device 15A includes a first crosspiece 421 connected to the inner surface 41e of the first side 411. Although not shown, the crosspiece 42 of the mask support 40 of the standard mask device 15A may include a second crosspiece 422 connected to the inner surface 41e of the second side 412. Although not shown, the crosspiece 42 of the mask support 40 of the standard mask device 15A may include a first crosspiece 421 connected to the inner surface 41e of the first side 411 and a second crosspiece 422 connected to the inner surface 41e of the second side 412.

[0345] Next, the second embodiment will be described in more detail using examples, but the second embodiment is not limited to the descriptions of the following examples as long as it does not deviate from the gist of the embodiment.

[0346] The deformation occurring in the frame 41 was verified by simulation.

[0347] As shown in Figure 68, a mask support 40 was designed that includes a frame 41 and crosspieces 42. The first frame surface 41a of the frame 41 and the first crosspiece surface 42a of the crosspiece 42 are located on the same plane. The material that constitutes the frame 41 and crosspieces 42 is an iron alloy containing 36% by weight of nickel. The configuration, dimensions, etc. of the frame 41 and crosspieces 42 are as follows: Length of first side 411 L1: 1105mm Length of second side 412 (L2): 1701mm Number of pieces in the first section 421: 7 Width of first crosspiece 421 WA5: 3mm Number of pieces in the second cross section 422: 22 Width of second crosspiece 422 WA6: 5.5mm Frame 41 thickness T2: 30mm Thickness T3 of crosspiece 42: 0.0mm, 1.7mm, 4.4mm, 7.0mm, 9.7mm, 12.3mm, 15.0mm, 20.0mm, 25.0mm, 30.0mm

[0348] As shown in Fig. 68, the deformation amount K that occurs in second edge 412 when force Tx is applied to second edge 412 in first direction D1 was calculated by simulation. Force Tx corresponds to the force that second edge 412 receives from mask 50. Force Tx was set to 27 N. ADINA manufactured by ADINA R&D was used as the simulation software. The results of the simulation are shown in Fig. 69.

[0349] 70 and 71 show the relationship between the thickness T3 of the crosspiece 42 and the deformation amount K. The horizontal axis represents the ratio of the thickness T3 of the crosspiece 42 to the thickness T2 of the frame 41. The minimum ratio, which is the ratio T3 / T2 when the deformation amount K of the frame 41 reaches the minimum value MIN, is expected to be between 0.40 and 0.60.

[0350] Next, a third embodiment will be described. The third embodiment is characterized by a method for fixing the mask 50 to the mask support 40.

[0351] The third embodiment aims to provide a method for manufacturing a mask apparatus and a method for manufacturing an organic device that can reduce the time required to align a mask with a frame.

[0352] A manufacturing method of a mask device according to a third embodiment may include a frame preparation step, a mask preparation step, an arrangement step, a mask alignment step, and a bonding step. In the frame preparation step, a frame may be prepared, the frame having: a first frame surface; a second frame surface located opposite the first frame surface; an opening penetrating from the first frame surface to the second frame surface; a frame wall surface located outward from the opening in a plan view and extending from the first frame surface toward the second frame surface, the frame wall surface including a first wall surface edge located on the first frame surface side and a second wall surface edge located on the second frame surface side; and a third frame surface extending outward from the second wall surface edge along the second frame surface in a plan view. In the mask preparation step, a mask may be prepared, the mask having a first mask edge located on one side edge in the second direction, a second mask edge located on the other side edge in the second direction, a pair of end portions located on both sides in a first direction perpendicular to the second direction, and a through-hole located between the pair of end portions. In the positioning step, the mask may be positioned in the frame so that an end of the mask overlaps an edge of the first wall in a plan view and the edge of the first wall extends in a straight line in the second direction from the first mask edge to the second mask edge of the mask. In the mask alignment step, after the positioning step, the mask may be aligned with the frame while being pulled in the first direction with a joining tension and pressed against the frame. In the bonding step, after the mask positioning step, the mask may be bonded to the frame while being pulled in the first direction with the joining tension and pressed against the frame.

[0353] The method for manufacturing an organic device according to the third embodiment may include a mask device preparation step of preparing a mask device by the above-described method for manufacturing a mask device, a bonding step, and a vapor deposition step. In the bonding step, the mask of the mask device may be bonded to the substrate. In the vapor deposition step, a vapor deposition material may be deposited on the substrate through the through-holes of the mask to form a vapor deposition layer.

[0354] A mask device according to a third embodiment may include a frame and a mask disposed on the frame. The frame may have a first frame surface, a second frame surface located opposite the first frame surface, an opening penetrating from the first frame surface to the second frame surface, a frame wall surface located outward from the opening in a plan view and extending from the first frame surface toward the second frame surface, the frame wall surface including a first wall surface edge located on the first frame surface side and a second wall surface edge located on the second frame surface side, and a third frame surface extending from the second wall surface edge outward in a plan view along the second frame surface. The mask may have a first mask edge located on one side edge in the second direction, a second mask edge located on the other side edge in the second direction, a pair of end portions located on both sides in a first direction perpendicular to the second direction and overlapping the first frame surface, and a through-hole located between the pair of end portions. The mask has a pair of mask edges located on both sides in the first direction and inward from the first wall surface edge. The first wall edge may extend linearly in the first direction from an extension line of the first mask edge to an extension line of the second mask edge of the mask.

[0355] An intermediate mask device according to a third embodiment includes a frame and a mask disposed on the frame. The frame may have a first frame surface, a second frame surface opposite the first frame surface, an opening penetrating from the first frame surface to the second frame surface, a frame wall surface positioned outward from the opening in a plan view and extending from the first frame surface toward the second frame surface, the frame wall surface including a first wall surface edge positioned on the first frame surface side and a second wall surface edge positioned on the second frame surface side, and a third frame surface extending from the second wall surface edge outward in a plan view along the second frame surface. The mask may have a first mask edge positioned on one side edge in the second direction, a second mask edge positioned on the other side edge in the second direction, a pair of end portions positioned on both sides in a first direction perpendicular to the second direction and overlapping the first frame surface, and a through-hole positioned between the pair of end portions. The first wall edge may overlap the edge of the mask in a plan view, and may extend linearly in the first direction from the first mask edge to the second mask edge of the mask.

[0356] According to the third embodiment, it is possible to reduce the time required to align the mask with the frame.

[0357] A first aspect of the third embodiment is a frame preparation step of preparing a frame having a frame first surface, a frame second surface located on the opposite side to the frame first surface, an opening penetrating from the frame first surface to the frame second surface, a frame wall surface located outward from the opening in a plan view and extending from the frame first surface toward the frame second surface, the frame wall surface including a first wall surface edge located on the frame first surface side and a second wall surface edge located on the frame second surface side, and a frame third surface extending from the second wall surface edge outward in a plan view along the frame second surface; a mask preparation step of preparing a mask having a first mask edge located on one side edge in a second direction, a second mask edge located on the other side edge in the second direction, a pair of ends located on both sides in a first direction perpendicular to the second direction, and a through hole located between the pair of ends; an arrangement step of arranging the mask in the frame so that the end portion of the mask overlaps the first wall edge in a plan view, and the first wall edge extends in a straight line in the second direction from the first mask edge to the second mask edge of the mask; a mask alignment step of aligning the mask with respect to the frame while pulling the mask in the first direction with a bonding tension and pressing the mask against the frame after the placement step; The method for manufacturing a mask device includes a bonding step of bonding the mask to the frame while pulling the mask in the first direction with the bonding tension and pressing the mask against the frame after the mask alignment step.

[0358] A second aspect of the third embodiment is that in the method for manufacturing a mask device according to the first aspect described above, the mask alignment process may include a first confirmation process of confirming the position of the through hole relative to the frame while the bonding tension is applied to the mask and the mask is pressed against the frame.

[0359] A third aspect of the third embodiment is a method for manufacturing a mask device according to the second aspect described above, wherein the mask alignment process may include a moving process in which, based on the results of confirmation of the position of the through hole in the first confirmation process, the mask is moved in any direction within a two-dimensional plane defined by the second direction and the first direction while the mask is pressed against the frame while the bonding tension is applied to the mask.

[0360] A fourth aspect of the third embodiment is that in the method for manufacturing a mask device according to each of the first aspect to the third aspect described above, the mask alignment process may include a second confirmation process in which, after the moving process, a bonding tension is applied to the mask and the mask is pressed against the frame, while the position of the through hole relative to the frame is confirmed.

[0361] In a fifth aspect of the third embodiment, in the method for manufacturing a mask device according to the first aspect described above, the mask alignment process may include a third confirmation process of confirming the position of the through hole relative to the frame while pressing the mask against the frame, a tension adjustment process of adjusting the tension applied to the mask based on the result of the confirmation of the position of the through hole in the third confirmation process, and a fourth confirmation process of confirming the position of the through hole relative to the frame while pressing the mask against the frame while applying the joining tension to the mask after the tension adjustment process.

[0362] A sixth aspect of the third embodiment may further include, in the method for manufacturing a mask device according to each of the first to fifth aspects described above, a cutting step of cutting the end of the mask after the bonding step. In the bonding step, a bonding portion extending from the end of the mask to the frame may be formed. In the cutting step, the mask may be cut at a position on the end of the mask that is outer than the bonding portion in the first direction, and a portion outer than the cutting position may be removed.

[0363] A seventh aspect of the third embodiment is the method for manufacturing a mask device according to the sixth aspect, wherein a frame groove extending in the second direction may be provided on the first frame surface of the frame, and the mask may be cut along the frame groove in the cutting step.

[0364] An eighth aspect of the third embodiment is that in the method for manufacturing a mask device according to each of the first aspect to the seventh aspect described above, when two or more masks lined up in the second direction are joined to the frame, the first wall edge of the frame may extend in a straight line in the second direction from one of the masks to the other of the masks.

[0365] A ninth aspect of the third embodiment is that, in the method for manufacturing a mask device according to the eighth aspect described above, the first wall edge of the frame may extend in a straight line in the second direction from the mask located furthest to one side in the second direction to the mask located furthest from the mask located furthest to the other side.

[0366] Each of the first to ninth aspects described above may be a mask device manufactured by the method for manufacturing a mask device of each of the first to ninth aspects.

[0367] A tenth aspect of the third embodiment is a device preparation step of preparing the mask device by the method for manufacturing the mask device according to each of the first to ninth aspects described above; a contact step of contacting the mask of the mask device with a substrate; and a vapor deposition step of depositing a vapor deposition material onto the substrate through the through-holes of the mask to form a vapor deposition layer.

[0368] As an eleventh aspect of the third embodiment, in the adhesion step of the method for manufacturing an organic device according to the tenth aspect, the substrate may be held from above by an electrostatic chuck.

[0369] The above-mentioned tenth to eleventh aspects may each be an organic device manufactured by the organic device manufacturing method of each of the tenth to eleventh aspects.

[0370] A twelfth aspect of the third embodiment is a frame having a frame first surface, a frame second surface located on the opposite side to the frame first surface, an opening penetrating from the frame first surface to the frame second surface, a frame wall surface located outward from the opening in a plan view and extending from the frame first surface toward the frame second surface, the frame wall surface including a first wall surface edge located on the frame first surface side and a second wall surface edge located on the frame second surface side, and a frame third surface extending from the second wall surface edge outward in a plan view along the frame second surface; a mask provided on the frame, the mask having a first mask edge located on one side edge in the second direction, a second mask edge located on the other side edge in the second direction, a pair of end portions located on both sides in a first direction perpendicular to the second direction and overlapping with a first surface of the frame, and a through hole located between the pair of end portions; the mask has a pair of mask ends located on both sides in the first direction and inside the first wall edge, The mask device has a first wall edge that extends linearly in the first direction from an extension line of the first mask edge to an extension line of the second mask edge of the mask.

[0371] A thirteenth aspect of the third embodiment may be a mask device according to the twelfth aspect, further comprising two or more masks arranged side by side in the second direction, and the first wall edge may extend in a straight line in the second direction from one mask to the other mask.

[0372] A fourteenth aspect of the third embodiment is that, in the mask device according to the thirteenth aspect described above, the first wall edge may extend in a straight line in the second direction from the mask located furthest to one side in the second direction to the mask located furthest from the first mask.

[0373] A fifteenth aspect of the third embodiment is that in a mask device according to each of the twelfth aspect to the fourteenth aspect described above, a frame groove extending in the second direction may be provided on the first frame surface of the frame.

[0374] A sixteenth aspect of the third embodiment is a frame having a frame first surface, a frame second surface located on the opposite side to the frame first surface, an opening penetrating from the frame first surface to the frame second surface, a frame wall surface located outward from the opening in a plan view and extending from the frame first surface toward the frame second surface, the frame wall surface having a first wall surface edge located on the side of the frame first surface, a second wall surface edge located on the side of the frame second surface, and a frame third surface extending from the second wall surface edge outward in a plan view along the frame second surface; a mask provided on the frame, the mask having a first mask edge located on one side edge in the second direction, a second mask edge located on the other side edge in the second direction, a pair of end portions located on both sides in a first direction perpendicular to the second direction and overlapping with a first surface of the frame, and a through hole located between the pair of end portions; The first wall edge is an intermediate part of the mask device that overlaps the end of the mask in a plan view and extends in a straight line in the first direction from the first mask edge to the second mask edge of the mask.

[0375] The third embodiment will be described in detail below with reference to the drawings. Note that the embodiments shown below are examples of the second embodiment, and the third embodiment should not be construed as being limited to these embodiments. In the following description and the drawings used in the following description, parts that can be configured similarly to the above-described embodiment will be designated by the same reference numerals as those used for corresponding parts in the above-described embodiment. Duplicate descriptions will be omitted. Furthermore, if it is clear that the effects obtained in the above-described embodiment can also be obtained in the following embodiment, the description may be omitted.

[0376] In the following embodiment, an example will be described in which the mask apparatus is a mask apparatus 15 including a mask support 40 and a mask 50. Although not shown, the mask apparatus may also be a standard mask apparatus 15A including a mask support 40 and a standard mask 50A. That is, the technical concept of this embodiment may be applied to the standard mask apparatus 15A, the manufacturing method for the standard mask apparatus 15A, and the deposition method using the standard mask apparatus 15A.

[0377] FIG. 72 is a vertical cross-sectional view showing an example of a deposition chamber 10. As shown in FIG. 72, the substrate 110 may be held by an electrostatic chuck 9 that utilizes electrostatic force. The electrostatic chuck 9 is disposed above the substrate 110. The deposition chamber 10 may also include a magnet 5 disposed above the electrostatic chuck 9. A cooling plate (not shown) that cools the substrate 110 during deposition may be interposed between the electrostatic chuck 9 and the magnet 5. Note that the deposition chamber 10 does not necessarily have to include such a magnet 5. In this case, the mask 50 may be brought into close contact with the substrate 110 by the electrostatic force of the electrostatic chuck 9 described above.

[0378] 73 is a plan view showing an example of a mask device 15. The mask device 15 may include a mask support 40 including a frame 41, and a mask 50 provided on the frame 41. Two or more masks 50 may be provided on the frame 41 and aligned in the second direction D2. The mask 50 may be formed in an elongated shape such that the first direction D1, which is perpendicular to the second direction D2, is the longitudinal direction. The mask 50 may have a plurality of through-hole groups 56a (or a plurality of effective areas 53, both of which will be described later) arranged in a line in the first direction D1.

[0379] The frame 41 supports the mask 50 in a state where the mask 50 is pulled in the planar direction in order to prevent the mask 50 from bending.

[0380] As shown in Fig. 74, the frame 41 may have a frame first surface 41a located on the mask 50 side and a frame second surface 41b located on the opposite side of the frame first surface 41a. A second surface 552 (described later) of the mask 50 is joined to the frame first surface 41a. Note that Fig. 74 is a diagram schematically showing a cross section taken along line AA in Fig. 73, and the number of through-hole groups 56a and through-holes 56 described later has been reduced to make the drawing clearer.

[0381] As shown in FIG. 73 , the frame 41 may be formed in a rectangular frame shape in a plan view. For example, the frame 41 may include a pair of first sides 411 extending in a first direction D1 and a pair of second sides 412 extending in a second direction D2. The frame 41 may also have an opening 43 extending from a first frame surface 41a to a second frame surface 41b. The opening 43 is located between the pair of first sides 411 and the pair of second sides 412. The opening 43 overlaps with the through-hole group 56a of the mask 50 in a plan view, exposing the through-hole group 56a to the second frame surface 41b. In the example shown in FIG. 73 , the opening 43 is formed in a rectangular shape in a plan view so as to extend along the second direction D2 and the first direction D1. Here, the term “plan view” refers to a view in the thickness direction D3 of the mask 50, for example, a view perpendicular to the plane of FIG. 73 . The thickness direction D3 is a direction that is perpendicular to the second direction D2 and perpendicular to the first direction D1. When the mask 50 extends in the horizontal direction, the thickness direction D3 is the up-down direction D3.

[0382] As shown in FIGS. 73 and 74, the frame 41 may have four frame wall surfaces 44a to 44d extending from the frame first surface 41a toward the frame second surface 41b, and a frame third surface 41c. The frame wall surfaces 44a and 44b are located on both sides of the opening 43 in the first direction D1, on the outside. In other words, the opening 43 is located between the frame wall surfaces 44a and 44b in the first direction D1. The frame wall surfaces 44c and 44d are located on both sides of the opening 43 in the second direction D2, on the outside. In other words, the opening 43 is located between the frame wall surfaces 44c and 44d in the second direction D2. The four frame wall surfaces 44a to 44d are formed in a rectangular shape in a plan view so as to fit along the opening 43. The frame first surface 41a is formed in the shape of a rectangular frame in a plan view. Here, "outside" means, in plan view, the side opposite to the center side (inside) of the opening 43. For example, the outside in the second direction D2 means the left or right side in FIG. 73, and the outside in the first direction D1 means the upper or lower side in FIG.

[0383] The frame wall surfaces 44a-44d are connected to the first frame surface 41a but not to the second frame surface 41b. As shown in FIGS. 74 and 75A, the frame wall surfaces 44a-44d extend in a direction intersecting the first frame surface 41a when viewed in a cross section along the thickness direction D3. Representatively, FIG. 74 shows a pair of frame wall surfaces 44a, 44b, and FIG. 75A shows the frame wall surface 44a. While an example is shown in which the frame wall surfaces 44a, 44b are formed perpendicular to the first frame surface 41a, they may be inclined gradually outward relative to the first frame surface 41a as they progress toward the second frame surface 41b. The same applies to the frame wall surfaces 44c, 44d.

[0384] The frame wall surfaces 44a, 44b include a first wall edge 44e located on the edge on the side of the frame first surface 41a. The first wall edge 44e overlaps a corresponding overlapping portion 51 (described below) of the mask 50 in a planar view before the cutting process described below. The overlapping portion 51 is also referred to as an end portion 51. As shown in FIG. 76, the first wall edge 44e of the frame wall surfaces 44a, 44b extends in a straight line in the second direction D2 from a first extension line 50e of a first mask edge 50c (described below) of the mask 50 after the cutting process to a second extension line 50f of a second mask edge 50d. Here, the term "the first wall edge 44e extends in a straight line" means that the first wall edge 44e forms a straight line in a planar view, but this term is not limited to a strict meaning. This term is used to refer to a concept including the first wall edge 44e being formed in a non-linear shape within a range that can suppress the concentration of stress on the mask 50 due to the reaction force that the mask 50 receives from the frame 41, for example, in the mask alignment process described below.

[0385] As described above, a plurality of masks 50 are joined to the frame 41. As a result, as shown in Figures 73 and 76, the first wall edge 44e of the frame wall surfaces 44a, 44b may extend in a straight line in the second direction D2 from one mask 50 to the other mask 50. Also, as shown in Figure 73, the first wall edge 44e of the frame wall surfaces 44a, 44b may extend in a straight line in the second direction D2 from the mask 50 located closest to one side in the second direction D2 to the mask 50 located closest to the mask 50 located closest to the mask 50.

[0386] As shown in FIG. 74, the frame wall surfaces 44a, 44b include a second wall edge 44f located on the edge on the side of the frame second surface 41b. The frame third surface 41c extends outward from the second wall edge 44f to an outer surface 41f (described later). The frame third surface 41c extends along the frame second surface 41b. FIGS. 74 and 75A show an example in which the frame third surface 41c is formed parallel to the frame second surface 41b. Although not shown, the frame third surface 41c may be inclined with respect to the frame second surface 41b so as to gradually approach the frame second surface 41b as it extends outward.

[0387] Like the frame wall surfaces 44a and 44b, the frame wall surfaces 44c and 44d may also include a first wall edge 44e and a second wall edge 44f. The frame third surface 41c may also extend outward from the second wall edge 44f of the frame wall surfaces 44c and 44d. The frame third surface 41c may extend to an outer surface 41f, which will be described later. That is, as shown in FIG. 73, the frame third surface 41c may be formed in the shape of a rectangular frame in a plan view.

[0388] As shown in FIG. 75B, in a cross section along the thickness direction D3, the frame wall surface 44a may include a curved portion 44h located on the side of the frame first surface 41a. The curved portion 44h may have a curved shape. The first wall surface edge 44e described above is located on the edge of the curved portion 44h on the side of the frame first surface 41a. In other words, the first wall surface edge 44e is located at the position where the curved portion 44h and the frame first surface 41a intersect. The curved portion 44h may be formed, for example, in a shape that forms a part of a circular arc. In this case, the curved portion 44h may have a radius of, for example, 0.3 mm or more in a cross section along the thickness direction D3 and perpendicular to the frame wall surface 44a. In this case, the upper limit of the radius of the curved portion 44h may be equal to or less than the dimension of the frame wall surface 44a in the thickness direction D3. The other frame wall surfaces 44b to 44d may also include curved portions 44h in a similar manner. The frame wall surface 44a does not have to include the curved portion 44h. In this case, the first wall edge 44e is located at the position where the frame wall surface 44a and the frame first surface 41a intersect.

[0389] As shown in FIG. 75A, a frame groove 44k extending in the second direction D2 may be provided on the frame first surface 41a. The frame groove 44k may be located more inward in the first direction D1 than the frame wall surfaces 44a and 44b. The frame groove 44k may be configured to allow insertion of a cutting means (e.g., a cutting blade 72) for cutting the mask 50. The frame groove 44k is located between the opening 43 and the frame wall surfaces 44a and 44b in a plan view. The frame groove 44k may extend linearly in the second direction D2. The frame groove 44k may extend linearly in the second direction D2 from the mask 50 located furthest to one side in the second direction (e.g., the leftmost side in FIG. 73) to the mask 50 located furthest to the mask 50 located furthest to the rightmost side in FIG. 73.

[0390] The cross section of the frame groove 44k can have any shape as long as it can accommodate the above-described cutting blade 72. In Figure 75A, as an example, the cross section of the frame groove 44k is shown to be rectangular.

[0391] 73 to 75A, the opening 43 is defined by four inner surfaces 41e. The inner surfaces 41e extend from the first frame surface 41a to the second frame surface 41b. The inner surfaces 41e may be formed perpendicular to the first frame surface 41a and the second frame surface 41b.

[0392] 73 to 75A, the outer periphery of the frame 41 in plan view is defined by four outer surfaces 41f. The outer surfaces 41f extend from the frame third surface 41c to the frame second surface 41b. The outer surfaces 41f may be formed perpendicular to the frame third surface 41c and the frame second surface 41b.

[0393] As shown in FIG. 73 , a frame alignment mark 48 may be provided on the first frame surface 41 a of the frame 41. The frame alignment mark 48 is used for aligning an alignment mask 80 (described later), etc. For example, four frame alignment marks 48 may be provided as shown in FIG. 73 . The frame alignment marks 48 may be located near corners of the opening 43. The frame alignment marks 48 may pass through the frame 41 when alignment with the mask alignment marks 81 is performed by irradiating them with light. However, the frame alignment marks 48 do not have to pass through the frame 41 as long as they can be aligned with the mask alignment marks 81. The planar shape of the frame alignment marks 48 is arbitrary, but FIG. 73 shows a circular shape as an example.

[0394] Next, a mask 50 according to one embodiment of the present disclosure will be described with reference to FIGS. 73, 74, 76, and 77. The mask 50 can be manufactured by any manufacturing method. For example, the mask 50 may be manufactured by etching a rolled material, or by a plating process. When manufactured by a plating process, the mask 50 may be composed of two or more layers. In this case, through-holes 56, which will be described later, are formed to penetrate these layers.

[0395] As shown in FIGS. 73 and 76, the mask 50 may have a first mask edge 50c and a second mask edge 50d located on opposite sides in the second direction D2 (the width direction of the mask 50) in a plan view. The first mask edge 50c is located at one side edge in the second direction D2 (the left side in FIG. 73) and extends from a first mask edge 50g to a second mask edge 50h (described later). The second mask edge 50d is located at the other side edge in the second direction D2 (the right side in FIG. 73) and extends from the first mask edge 50g to the second mask edge 50h. Each mask edge 20c, 20d extends in the first direction D1. FIG. 76 shows a first extension line 50e extending the first mask edge 50c and a second extension line 50f extending the second mask edge 50d. The extension lines 20e, 20f are lines that extend outward in the first direction D1 from mask edges 50g, 50h, which will be described later, and may be lines that extend in a straight line from the corresponding mask edges 20c, 20d.

[0396] The mask 50 may have a first mask edge 50g and a second mask edge 50h located on opposite sides in a first direction D1 perpendicular to the second direction D2. The first mask edge 50g is located at one end (upper side in FIG. 73) in the first direction D1 and extends from the first mask edge 50c to the second mask edge 50d. The second mask edge 50h is located at the other end (lower side in FIG. 73) in the first direction D1 and extends from the first mask edge 50c to the second mask edge 50d. Each mask edge 50g, 50h extends in the second direction D2. In a plan view, each mask edge 50g, 50h is located more inward in the first direction D1 than the first wall surface edge 44e of the corresponding frame wall surface 44a, 44b of the frame 41. More specifically, the first mask end 50g is located more inward in the first direction D1 than the first wall edge 44e of the frame wall surface 44a (lower in FIG. 73), and the second mask end 50h is located more inward in the first direction D1 than the first wall edge 44e of the frame wall surface 44b (upper in FIG. 73). Each mask end 50g, 50h is formed by cutting the mask 50 with a cutting blade 72 (described later), and is located at a position that overlaps the corresponding frame groove 44k in a plan view.

[0397] As shown in FIGS. 74 and 76 , the mask 50 may have a pair of end portions 51 located on both sides in the first direction D1 and overlapping the frame first surface 41a. The end portions 51 are located between the first mask edge 50c and the second mask edge 50d and are located outward in a plan view in the first direction D1 from a through-hole group 56a (described later). A portion of the end portions 51 is cut and removed in a cutting process (described later). More specifically, the end portions 51 include a mask weld portion 51a welded to the frame 41 to form a weld portion 46 (described later), and a removal portion 59 located outward in a plan view in the first direction D1 from the mask weld portion 51a and removed in the cutting process. The removal portion 59 includes a pressing portion 59a that is pressed against the frame 41 together with the mask weld portion 51a in a mask alignment process (described later), and a holding portion 59b that is held by a mask clamp 70 (described later). In FIG. 76, the removed portion 59 is indicated by a two-dot chain line.

[0398] As shown in Fig. 74, the mask 50 may have two or more through holes 56. The mask 50 may have a through hole group 56a consisting of two or more through holes 56. In the present embodiment, as shown in Fig. 73, each mask 50 has two or more through hole groups 56a aligned in the first direction D1. The through hole group 56a is located between the first mask edge 50c and the second mask edge 50d in the second direction D2, and is located between the pair of end portions 51 in the first direction D1.

[0399] 74, through-hole 56 extends from first surface 551 to second surface 552 and penetrates mask 50. In order to simplify the drawing, FIG. 74 shows an example in which the wall surface of through-hole 56 is linearly inclined with respect to central axis CL so as to move away from central axis CL from first surface 551 to second surface 552. In this way, the wall surface of through-hole 56 may be formed so that the opening dimension at first surface 551 is smaller than the opening dimension at second surface 552.

[0400] As shown in FIG. 77, the through holes 56 may form the above-described through hole group 56a. The through hole group 56a overlaps with the opening 43 of the frame 41 (see FIGS. 73 and 74) and is exposed through the opening 43. All of the through hole groups 56a may overlap with the openings 43. As shown in FIG. 77, the through hole group 56a may be configured such that two or more through holes 56 form a group. The term "through hole group 56a" is used to mean a collection of a plurality of regularly arranged through holes 56. The outer edge through holes 56 constituting one through hole group 56a are the outermost through holes 56 among the plurality of regularly arranged through holes 56. Outside the outer edge through holes 56, there may not be through holes 56 that are similarly regularly arranged and intended to allow the vapor deposition material 7 to pass through. However, outside the outer edge through holes 56, through holes or recesses (neither of which are shown) for other purposes may be formed. These through holes and recesses for other uses may be formed without any regularity in the arrangement of the through holes 56, and may not be considered to belong to the through hole group 56a.

[0401] 73, the multiple through-hole groups 56a may be arranged at a predetermined interval (at a predetermined pitch). The through-hole groups 56a may be arranged at a predetermined interval in the first direction D1. Although not shown, the through-hole groups 56a may be arranged in parallel in the second direction D2 and the first direction D1. That is, the through-hole groups 56a constituting one row along the second direction D2 and the through-hole groups 56a constituting another row adjacent to that row in the first direction D1 may be aligned in the first direction D1.

[0402] As shown in FIG. 77, in one through-hole group 56a, the multiple through holes 56 may be arranged at a predetermined interval (a predetermined pitch). The through holes 56 may be arranged at a predetermined interval (reference symbol C2 in FIG. 77) in the second direction D2 and at a predetermined interval (reference symbol C1 in FIG. 77) in the first direction D1. The arrangement pitches C1, C2 of the through holes 56 may be different in the second direction D2 and the first direction D1, or may be equal. FIG. 77 shows an example in which the arrangement pitch C2 in the second direction D2 and the arrangement pitch C1 in the first direction D1 are equal. As shown in FIG. 77, the through holes 56 may be arranged in parallel. More specifically, the through holes 56 constituting one row along the second direction D2 may be aligned with the through holes 56 constituting another row adjacent to that row in the first direction D1 in the first direction D1. The arrangement pitches C1 and C2 of the through holes 56 may be determined, for example, as follows, depending on the pixel density of the display device or the projection device. - When the pixel density is 600ppi or more: the pitch must be 42.3μm or less - When the pixel density is 1200ppi or more: the pitch must be 21.2μm or less - When the pixel density is 3000ppi or more: the pitch must be 8.5μm or less - When pixel density is 5000ppi or more: pitch is 5.1μm or less

[0403] A display device or projection device with a pixel density of 600 ppi may be used to display images or videos at a distance of about 15 cm from the eyeball, and may be used, for example, as an organic device for a smartphone. A display device or projection device with a pixel density of 1200 ppi may be used to display images or videos at a distance of about 8 cm from the eyeball, and may be used, for example, to display or project images or videos for expressing virtual reality (so-called VR). A display device or projection device with a pixel density of 3000 ppi may be used to display images or videos at a distance of about 3 cm from the eyeball, and may be used, for example, to display or project images or videos for expressing augmented reality (so-called AR). A display device or projection device with a pixel density of 5000 ppi may be used to display images or videos at a distance of about 2 cm from the eyeball, and may be used, for example, to display or project images or videos for expressing augmented reality.

[0404] The through holes 56 in one through-hole group 56a may be arranged in a staggered pattern (not shown) instead of in a parallel arrangement. That is, the through holes 56 constituting one row along the second direction D2 and the through holes 56 constituting another row adjacent to that row in the first direction D1 do not have to be aligned in the first direction D1. The through holes 56 constituting one row may be arranged offset in the second direction D2 from the through holes 56 constituting the adjacent row. The amount of offset may be half the arrangement pitch C2 in the second direction D2, but the amount of offset is arbitrary.

[0405] As shown in FIG. 77 , the through-hole 56 may have a substantially rectangular outline in a plan view. In this case, the four corners of the outline of the through-hole 56 may be curved. The shape of the outline may be determined arbitrarily depending on the shape of the pixel. For example, the outline may be a polygonal shape such as a hexagon or an octagon, or may be a circular shape. The outline shape may also be a combination of multiple shapes. The through-holes 56 may each have a different outline shape. When the through-hole 56 has a polygonal outline, the opening dimension of the through-hole 56 may be the distance between a pair of opposing sides of the polygon, as shown in FIG. 77 .

[0406] 74 and 77, the opening dimension of the through hole 56 on the first surface 551 of the mask 50 is indicated by the symbol Q1. The opening dimension of the through hole 56 on the second surface 552 of the mask 50 is indicated by the symbol Q2. The symbol Q3 indicates the distance between adjacent through holes 56 on the first surface 551. In FIG. 77, the planar shape of the through hole 56 is square, so the opening dimension of the through hole 56 in the second direction D2 and the opening dimension of the through hole 56 in the first direction D1 are equal. The dimensions of the through hole 56 in the first direction D1 are representatively indicated by the symbols Q1 and Q2.

[0407] The dimensions Q1, Q2, and Q3 are determined according to the pixel density of the display device or the projection device, for example, as shown in Table 1 below. [Table 1]

[0408] The through-hole group 56a may be referred to as an effective area 53. The area surrounding the effective area 53 may be referred to as a peripheral area 54. In this embodiment, the peripheral area 54 surrounds one effective area 53. The outline of the effective area 53 may be defined by a line tangent to the outermost through-hole 56 of the corresponding through-hole group 56a. More specifically, the outline of the effective area 53 may be defined by a line tangent to the opening of the through-hole 56. In the example shown in FIG. 77, the through-holes 56 are arranged in parallel, so the outline of the effective area 53 is substantially rectangular. Although not shown, each effective area 53 may have an outline of various shapes depending on the shape of the display area of ​​the organic device. For example, each effective area 53 may have an outline of a circular shape.

[0409] As shown in FIG. 74 , the mask 50 has a thickness T extending from the first surface 551 to the second surface 552. The thickness T may be, for example, 2 μm or more, 5 μm or more, 10 μm or more, or 15 μm or more. By setting the thickness T to 2 μm or more, the mechanical strength of the mask 50 can be ensured. Furthermore, the thickness T may be, for example, 20 μm or less, 30 μm or less, 40 μm or less, or 50 μm or less. By setting the thickness T to 50 μm or less, the occurrence of shadows can be suppressed. The range of the thickness T may be defined by a first group consisting of 2 μm, 5 μm, 10 μm, and 15 μm, and / or a second group consisting of 20 μm, 30 μm, 40 μm, and 50 μm. The range of the thickness T may be defined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of thickness T may be defined by a combination of any two values ​​from the first group described above. The range of thickness T may be defined by a combination of any two values ​​from the second group described above.For example, it may be 2 μm or more and 50 μm or less, 2 μm or more and 40 μm or less, 2 μm or more and 30 μm or less, 2 μm or more and 20 μm or less, 2 μm or more and 15 μm or less, 2 μm or more and 10 μm or less, 2 μm or more and 5 μm or less, 5 μm or more and 50 μm or less, 5 μm or more and 40 μm or less, 5 μm or more and 30 μm or less, 5 μm or more and 20 μm or less, 5 μm or more and 15 μm or less, 5 μm or more and 10 μm or less, 10 μm or more and 50 μm or less, or 10 μm or less. The thickness may be at most 40 μm, at most 10 μm and at most 30 μm, at most 10 μm and at most 20 μm, at most 10 μm and at most 15 μm, at most 15 μm and at most 50 μm, at most 15 μm and at most 40 μm, at most 15 μm and at most 30 μm, at most 15 μm and at most 20 μm, at most 20 μm and at most 50 μm, at most 20 μm and at most 40 μm, at most 20 μm and at most 30 μm, at most 30 μm and at most 50 μm, at most 30 μm and at most 40 μm, or at most 40 μm and at most 50 μm.

[0410] As shown in FIGS. 74 and 75A, each mask 50 is joined and fixed to the frame 41. For example, the mask 50 may be joined to the frame 41 by welding. For example, the mask 50 may be joined to the frame 41 by a weld 46 formed by spot welding. As shown in FIG. 76, the weld 46 may be formed at a position between the opening 43 and the frame groove 44k. As shown in FIG. 73, one mask 50 may be joined to the frame 41 by a plurality of spot-shaped welds 46. In this case, the plurality of welds 46 may be aligned in the second direction D2. Alternatively, although not shown, the weld 46 may be formed to extend continuously in the second direction D2.

[0411] As shown in FIG. 73, two alignment masks 80 may be provided on the frame 41. One alignment mask 80 is located closer to the frame wall surface 44d than the mask 50 located closest to the frame wall surface 44d. The other alignment mask 80 is located closer to the frame wall surface 44c than the mask 50 located closest to the frame wall surface 44c. In FIG. 73, one alignment mask 80 is located to the left of the leftmost mask 50, and the other alignment mask 80 is located to the right of the rightmost mask 50. The alignment masks 80 are bonded to the first frame surface 41a of the frame 41. The alignment masks 80 may be stretched and fixed across the frame 41.

[0412] Each alignment mask 80 includes two mask alignment marks 81. Each mask alignment mark 81 is positioned so as to overlap the corresponding frame alignment mark 48 in a plan view. The mask alignment mark 81 may penetrate the alignment mask 80 if alignment with the frame alignment mark 48 is achieved by irradiating it with light. However, the mask alignment mark 81 does not have to penetrate the alignment mask 80 as long as alignment with the frame alignment mark 48 can be achieved. The mask alignment mark 81 may have any planar shape, but in FIG. 73 , a circular shape is used as an example. The diameter of the mask alignment mark 81 may be smaller than the diameter of the frame alignment mark 48.

[0413] Next, a method for manufacturing the mask device 15 according to this embodiment having the above configuration will be described with reference to Figures 78 to 89. The method for manufacturing the mask device 15 according to this embodiment may include a frame preparation step, a mask preparation step, a holding step, an arrangement step, a mask alignment step, a bonding step, a removal step, and a cutting step.

[0414] First, in the frame preparation step, the above-described frame 41 is prepared. The frame 41 can be manufactured by any manufacturing method. For example, the frame 41 shown in FIGS. 73 to 75B may be manufactured by machining a plate material, a forged material, or the like. The frame 41 may be attached to a tensioning device (not shown). The tensioning device is a device that fixes the mask 50 to the frame 41 while applying tension to the mask 50. Thereafter, an alignment mask 80 (see FIG. 73) may be bonded to the frame 41. At this time, the mask alignment mark 81 of the alignment mask 80 is aligned with the frame alignment mark 48 of the frame 41.

[0415] In addition, in the mask preparation step, the above-mentioned mask 50 is prepared. As described above, the mask 50 can be manufactured by any manufacturing method such as etching or plating of a rolled material.

[0416] Next, in the holding step, the mask 50 is held by mechanical mask clamps 70. In this case, as shown in FIG. 78, the holding portions 59b of the remover 59 located at both ends of the mask 50 in the first direction D1 may be gripped by the mask clamps 70 (see FIG. 81). One holding portion 59b may be held by two mask clamps 70 at different positions in the second direction D2. A driving unit 70D may be connected to each mask clamp 70. The driving unit 70D may be configured to be able to individually tension each mask clamp 70. The driving unit 70D may pull each mask clamp 70 in the first direction D1, thereby applying a first tension Ta in the first direction D1 to the mask 50. The first tension Ta is the tension applied to the mask 50 in the holding step. The first tension Ta may be a relatively small value that is sufficient to prevent the mask 50 from bending significantly. Here, the tension applied to the mask 50 refers to the tension applied to the mask 50 from the mask clamps 70, and may be the tension applied to the mask 50 as a result of each mask clamp 70 pulling the mask 50. The tension applied to the mask 50 may be confirmed on a display unit (not shown) of the drive unit 70D, etc. When the mask 50 is pressed against the frame 41, the tension in the effective region 53 of the mask 50 becomes smaller than the tension applied to the mask 50 from the mask clamps 70.

[0417] Next, in the positioning step, the mask 50 is positioned on the frame 41 as shown in FIG. 79. More specifically, the mask 50 is first positioned above the frame 41, and then the mask 50 is lowered to contact the frame 41. In this case, as shown in FIG. 81, the end 51 of the mask 50 overlaps the first wall edge 44e of the frame wall surfaces 44a, 44b and the frame first surface 41a in a plan view. The first wall edge 44e is positioned so that it extends in a straight line in the second direction D2 from the first mask edge 50c to the second mask edge 50d of the mask 50. The mask 50 is positioned so that the direction perpendicular to the first wall edge 44e and the frame groove 44k is the longitudinal direction. In the positioning step, the mask 50 may be in a state in which the first tension Ta described above is applied, continuing from the holding step.

[0418] Next, as a mask alignment step, the mask 50 is aligned with the frame 41 as shown in FIGS. 80A and 80B. In the mask alignment step, the mask 50 is pulled in the first direction D1 with a second tension Tb, and the mask 50 is pressed against the frame 41. The second tension Tb is a tension applied to the mask 50 in the mask alignment step. The second tension Tb may have a value greater than the first tension Ta described above.

[0419] The mask alignment step may include a tension increasing step, a first through-hole checking step, a movement step, a second through-hole checking step, a tension adjusting step, and a third through-hole checking step. The first through-hole checking step is an example of a first checking step. The second through-hole checking step is an example of a second checking step and also an example of a third checking step. The third through-hole checking step is an example of a fourth checking step.

[0420] In the tension increasing step, the tension applied to the mask 50 is increased. More specifically, the above-described drive unit 70D (see FIG. 78) increases the tensile force of each mask clamp 70. As a result, the tension applied to the mask 50 increases from the first tension Ta to the second tension Tb.

[0421] In the first through-hole confirmation step, as shown in FIG. 80A , the position of the through-hole 56 relative to the frame 41 is confirmed. More specifically, it may be confirmed whether the position of the through-hole 56 is positioned within an allowable range with respect to the desired position. For example, the coordinates of the through-hole 56 relative to an arbitrarily set origin may be measured, and the measured coordinates may be compared with the target coordinates of the through-hole 56. For example, the coordinates of the through-hole 56 may be measured using the center of four mask alignment marks 81 (see FIG. 73 ) as the origin. For example, the intersection of two lines passing through the centers of two diagonally opposite mask alignment marks 81 may be set as the origin. The center of the mask alignment mark 81 may be measured by capturing an image of the alignment mask 80 from below with the camera 71 and analyzing the image. The coordinates of the through-hole 56 may be the center point of the through-hole 56 in a planar view. The coordinates of the through-hole 56 may be measured by capturing an image of the mask 50 from below with the camera 71 and analyzing the image. Coordinate measurements may be performed on a plurality of through holes 56 to confirm the positions of the plurality of through holes 56. The amount and direction of misalignment may be determined based on the results of confirming the positions of the through holes 56. In the first through hole confirmation step, the mask 50 may be pressed against the frame 41 while the second tension Tb described above is applied to the mask 50.

[0422] If the result of checking the position of the through hole 56 in the first through hole checking step shows that the through hole 56 is positioned within an allowable range relative to the desired position, the mask alignment step may be terminated and the process may proceed to the bonding step. In this case, the moving step described below may be unnecessary. If the through hole 56 is positioned within the allowable range, the second tension Tb applied to the mask 50 in the first through hole checking step becomes equal to the bonding tension Td described below. On the other hand, if the position of the through hole 56 is not positioned within the allowable range relative to the desired position, the moving step is performed.

[0423] In the moving step, as shown in FIG. 80B , the mask 50 is moved in any direction within a two-dimensional plane defined by the second direction D2 and the first direction D1. For example, the mask 50 may be moved in the second direction D2 or the first direction D1 in FIG. 81 . Alternatively, the mask 50 may be rotated in a planar view. Here, the mask 50 may be moved relative to the frame 41 by moving each mask clamp 70. In the moving step, the mask 50 may be moved based on the position confirmation result of the through hole 56 in the first through hole confirmation step described above. The amount of movement of the mask 50 may be a value corresponding to the amount of misalignment determined in the first through hole confirmation step. The direction of movement of the mask 50 may be a direction corresponding to the direction of misalignment determined in the first through hole confirmation step. In the moving step, the mask 50 moves relative to the frame 41 while being pressed against the frame 41 without being raised. This eliminates the need to raise and lower the mask 50 to move it, thereby reducing the time required for the mask alignment step. In the moving step, the mask 50 may be applied with the second tension Tb described above.

[0424] In the second through hole confirmation step, the position of the through hole 56 is confirmed relative to the frame 41. The second through hole confirmation step may be performed in the same manner as the first through hole confirmation step.

[0425] If the result of checking the position of the through hole 56 in the second through hole checking step shows that the through hole 56 is positioned within an allowable range relative to the desired position, the mask alignment step may be terminated and the process may proceed to the bonding step. In this case, the tension adjustment step described below may be unnecessary. If the through hole 56 is positioned within the allowable range, the second tension Tb applied to the mask 50 in the second through hole checking step becomes equal to the bonding tension Td described below. On the other hand, if the position of the through hole 56 is not positioned within the allowable range relative to the desired position, the tension adjustment step is performed.

[0426] In the tension adjustment process, as shown in FIG. 80C , the second tension Tb applied to the mask 50 is adjusted based on the results of the position confirmation of the through holes 56 in the second through hole confirmation process. More specifically, the force with which the driver 70D pulls each mask clamp 70 is adjusted so that each through hole 56 is positioned within an allowable range relative to the desired position. This adjusts the position of the through holes 56, allowing the corresponding through holes 56 to be aligned with the first electrode layers 120 of the substrate 110 in the adhesion process described below. The amount of deflection of the mask 50 can also be adjusted to a desired amount. Individually adjusting the tensile force of each mask clamp 70 allows the positions of some of the through holes 56 in the mask 50 to be adjusted, allowing each through hole 56 to be positioned within an allowable range. In the tension adjustment process, the positions of the through holes 56 may be adjusted by changing the tension without moving each mask clamp 70. The tension of each mask clamp 70 is adjusted individually, and as a result, the tension applied to the mask 50 is adjusted. The adjusted tension is referred to as the third tension Tc. The mask 50 may be pressed against the frame 41 even during the tension adjustment process. The difference between the third tension Tc and the second tension Tb may be smaller than the difference between the first tension Ta and the second tension Tb.

[0427] Thereafter, a third through hole confirmation process is performed. In the third through hole confirmation process, the positions of the through holes 56 relative to the frame 41 are confirmed in the same manner as in the first through hole confirmation process described above. In the third through hole confirmation process, the third tension Tc described above may be applied to the mask 50, and the mask 50 may be pressed against the frame 41.

[0428] If the result of confirming the position of the through hole 56 in the third through hole confirmation process indicates that the through hole 56 is positioned within an allowable range relative to the desired position, the mask alignment process may be terminated and the process may proceed to the bonding process. In this case, the third tension Tc applied to the mask 50 in the third through hole confirmation process is equal to the bonding tension Td described below. On the other hand, if the position of the through hole 56 is not positioned within an allowable range relative to the desired position, the tension adjustment process and the third through hole confirmation process may be performed again. The tension adjustment process and the third through hole confirmation process may be repeated until the through hole 56 is positioned within an allowable range relative to the desired position. The tension applied to the mask 50 in the final third through hole confirmation process may be set as the third tension Tc. Depending on the result of the position confirmation in the second through hole confirmation process, the movement process may be performed again to move the mask 50 relative to the frame 41. Depending on the result of the position confirmation in the third through hole confirmation process, the movement process may be performed again to move the mask 50 relative to the frame 41.

[0429] Depending on the result of the position confirmation in the first through hole confirmation step, the moving step and the second through hole confirmation step may be omitted and the tension adjusting step may be performed. In other words, the first through hole confirmation step and the moving step may be omitted and only the second through hole confirmation step may be performed as the positioning step.

[0430] As described above, in the mask alignment process, the mask 50 is pressed against the frame 41. This pressing force may be sufficient to prevent the mask 50 from lifting off the frame 41. For example, as shown in FIG. 81 , a case will be described in which the holding portions 59b located on both sides of the mask 50 in the second direction D2 are held by two mask clamps 70. In the mask alignment process, the tension in the first direction D1 applied to one of the holding portions 59b is the second tension described above. The same tension is applied to the other holding portion 59b. By relatively lowering the mask clamp 70 while this tension is being applied, the tension is converted into a pressing force, and the mask 50 is pressed against the frame 41. For example, the second surface 552 of the holding portion 59b held by the mask clamp 70 may be lowered within a range of 0.25 mm to 1.00 mm from the frame first surface 41a. In this case, the mask 50 may have a thickness of 20 μm, a pixel density of 600 ppi (equivalent to full high definition), and an effective area 53 corresponding to a 5.5-inch display area. The pressing force is applied to the mask 50 by the downward displacement of the mask clamp 70. Therefore, the mask 50 receives a reaction force from the first wall edge 44e of the frame wall surfaces 44a, 44b. However, as shown in FIG. 81, the mask 50 is placed on the frame 41 so that the first wall edge 44e extends linearly in the second direction D2 from the first mask edge 50c to the second mask edge 50d of the mask 50. This allows the reaction force received from the first wall edge 44e to be uniform across the width of the mask 50.

[0431] Here, a case where the substrate 110 constituting the organic device 100 is held by a mechanical substrate clamp 73 (see FIG. 84 ) in the vapor deposition process described later will be described with reference to FIGS. 82 to 84 . In this case, the substrate 110 is held by the substrate clamp 73 and is in close conta...

Claims

1. A method for evaluating a deposition chamber of an organic device manufacturing equipment, comprising: a deposition step of depositing a material onto a standard substrate including a standard mark through a through-hole of a standard mask of a standard mask device in the deposition chamber to form a deposition layer on the standard substrate; a carrying-out step of carrying out the standard substrate on which the deposition layer is formed from the manufacturing apparatus; an observation step of observing a positional relationship between the reference mark and the deposition layer on the reference substrate carried out from the manufacturing apparatus; a determination step of determining whether or not a positional relationship between the standard mark and the vapor deposition layer satisfies a condition, the deposition chamber is for forming a deposition layer on a substrate and an electrode substrate including a first electrode layer using a mask device during the manufacture of the organic device; The deposition process is performed using the standard substrate and the standard mask device, thereby evaluating the characteristics of the deposition chamber regarding the accuracy of the relative position of the mask device and the electrode substrate; the standard substrate includes divided regions defined by dividing an area of ​​the standard substrate on which the deposition layer is to be formed into m regions in a first direction and n regions in a second direction intersecting the first direction, m and n are integers of 2 or more, The evaluation method includes determining whether or not the positional relationship between the standard mark and the vapor deposition layer satisfies a condition in each divided region in the determining step.

2. A method for evaluating a deposition chamber of an organic device manufacturing equipment, comprising: a deposition step of depositing a material onto a standard substrate including a standard mark through a through-hole of a standard mask of a standard mask device in the deposition chamber to form a deposition layer on the standard substrate; a carrying-out step of carrying out the standard substrate on which the deposition layer is formed from the manufacturing apparatus; an observation step of observing a positional relationship between the reference mark and the deposition layer on the reference substrate carried out from the manufacturing apparatus; a determination step of determining whether or not a positional relationship between the standard mark and the vapor deposition layer satisfies a condition, the deposition chamber is for forming a deposition layer on a substrate and an electrode substrate including a first electrode layer using a mask device during the manufacture of the organic device; The deposition process is performed using the standard substrate and the standard mask device, thereby evaluating the characteristics of the deposition chamber regarding the accuracy of the relative position of the mask device and the electrode substrate; The determination step includes a first determination step of determining whether the following condition (1) is satisfied: (1) The outer edge of the vapor deposition layer is located inside the outer edge of the first mark of the standard mark; evaluation method.

3. The determination step includes a second determination step of determining whether the following condition (2) is satisfied: (2) The outer edge of the vapor deposition layer is located outside the outer edge of the second mark, which is located inside the first mark; The evaluation method according to claim 2.

4. A method for evaluating a deposition chamber of an organic device manufacturing equipment, comprising: a deposition step of depositing a material onto a standard substrate including a standard mark through a through-hole of a standard mask of a standard mask device in the deposition chamber to form a deposition layer on the standard substrate; a carrying-out step of carrying out the standard substrate on which the deposition layer is formed from the manufacturing apparatus; an observation step of observing a positional relationship between the reference mark and the deposition layer on the reference substrate carried out from the manufacturing apparatus; a determination step of determining whether or not a positional relationship between the standard mark and the vapor deposition layer satisfies a condition, the deposition chamber is for forming a deposition layer on a substrate and an electrode substrate including a first electrode layer using a mask device during the manufacture of the organic device; The deposition process is performed using the standard substrate and the standard mask device, thereby evaluating the characteristics of the deposition chamber regarding the accuracy of the relative position of the mask device and the electrode substrate; In the vapor deposition step, the vapor deposition layer is formed on a light-shielding layer that constitutes the reference mark, The observation step includes a step of irradiating light toward the standard mark from a surface of the standard substrate opposite to the light-shielding layer and the vapor deposition layer, and observing whether or not excitation light is generated from the vapor deposition layer.

5. A method for evaluating a deposition chamber of an organic device manufacturing apparatus, comprising: a deposition step of depositing a material onto a standard substrate including a standard mark through a through-hole of a standard mask of a standard mask device in the deposition chamber to form a deposition layer on the standard substrate; a carrying-out step of carrying out the standard substrate on which the deposition layer is formed from the manufacturing apparatus; an observation step of observing a positional relationship between the standard mark and the deposition layer on the standard substrate carried out from the manufacturing apparatus, the deposition chamber is for forming a deposition layer on a substrate and an electrode substrate including a first electrode layer using a mask device during the manufacture of the organic device; The deposition process is performed using the standard substrate and the standard mask device, thereby evaluating the characteristics of the deposition chamber regarding the accuracy of the relative position of the mask device and the electrode substrate; An evaluation method, wherein the standard mask has a standard area including the through holes and non-penetrating areas located around the through holes and having dimensions in a planar view larger than the arrangement period of the through holes.

6. The evaluation method according to claim 5 , wherein the standard mask includes two or more standard regions positioned in a central region in a width direction of the standard mask and aligned in a longitudinal direction of the standard mask.

7. The evaluation method according to claim 6 , wherein the standard mask has two or more of the through-holes located in end regions adjacent to the central region in the width direction of the standard mask and aligned in the longitudinal and width directions of the standard mask.

8. The evaluation method according to claim 6 , wherein the standard mask includes a non-penetrating region located in an end region adjacent to the central region in a width direction of the standard mask.

9. A method for evaluating a deposition chamber of an organic device manufacturing apparatus, comprising: a deposition step of depositing a material onto a standard substrate including a standard mark through a through-hole of a standard mask of a standard mask device in the deposition chamber to form a deposition layer on the standard substrate; a carrying-out step of carrying out the standard substrate on which the deposition layer is formed from the manufacturing apparatus; an observation step of observing a positional relationship between the standard mark and the deposition layer on the standard substrate carried out from the manufacturing apparatus, the deposition chamber is for forming a deposition layer on a substrate and an electrode substrate including a first electrode layer using a mask device during the manufacture of the organic device; The deposition process is performed using the standard substrate and the standard mask device, thereby evaluating the characteristics of the deposition chamber regarding the accuracy of the relative position of the mask device and the electrode substrate; the standard mask device includes the through-hole and includes a standard region aligned in a first direction and a second direction intersecting the first direction; the standard region is located in device space; The evaluation method, wherein the device space is a space overlapping the organic device manufactured in the deposition chamber.

10. A method for evaluating a deposition chamber of an organic device manufacturing equipment, comprising: a deposition step of depositing a material onto a standard substrate including a standard mark through a through-hole of a standard mask of a standard mask device in the deposition chamber to form a deposition layer on the standard substrate; a carrying-out step of carrying out the standard substrate on which the deposition layer is formed from the manufacturing apparatus; an observation step of observing a positional relationship between the standard mark and the deposition layer on the standard substrate carried out from the manufacturing apparatus, the deposition chamber is for forming a deposition layer on a substrate and an electrode substrate including a first electrode layer using a mask device during the manufacture of the organic device; The deposition process is performed using the standard substrate and the standard mask device, thereby evaluating the characteristics of the deposition chamber regarding the accuracy of the relative position of the mask device and the electrode substrate; the standard mask device includes the through-hole and includes a standard region aligned in a first direction and a second direction intersecting the first direction; a ratio of a dimension of the standard region in the first direction to a dimension of a gap between two of the standard regions in the first direction is 0.1 or more; An evaluation method, wherein the ratio of the dimension of the standard region in the second direction to the dimension of the gap between two of the standard regions in the second direction is 0.1 or more.

11. 11. The evaluation method according to claim 1, wherein the standard mask device comprises a frame including a pair of first sides extending in a first direction and a pair of second sides extending in a second direction intersecting the first direction, and two or more standard masks fixed to the pair of second sides and aligned in the second direction.

12. The evaluation method according to claim 1 , wherein the unloading step unloads the standard substrate from the manufacturing apparatus in a state in which elements on the standard substrate, including the deposition layer, are not sealed.

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