Perovskite-silicon based stacked solar cell and method for manufacturing same

Abstract

The present application discloses a perovskite-silicon-based stacked solar cell and a manufacturing method thereof, which relates to the technical field of stacked solar cells and is used to obtain a perovskite-silicon-based stacked solar cell that maintains the texture structure of the bottom cell while also achieving a high open circuit voltage and a high short circuit current. The manufacturing method of the perovskite-silicon-based stacked solar cell includes the steps of preparing a substrate including a silicon-based bottom cell having a texture structure, a charge recombination layer, and a first carrier transport layer, which are stacked in sequence, and forming a perovskite light absorbing layer consisting of two perovskite layers, a first perovskite layer and a second perovskite layer, on the first carrier transport layer having a texture structure, wherein the first perovskite layer is manufactured by a solution process and the second perovskite layer is manufactured by a perovskite framework vacuum deposition process. The manufacturing method provided in the present application is used to manufacture stacked solar cells.

Description

[Technical Field]

[0001] The present application relates to the technical field of stacked solar cells, and in particular to perovskite-silicon based stacked solar cells and methods for manufacturing the same.

[0002] (CROSS-REFERENCE TO RELATED APPLICATIONS) This application claims priority to a Chinese patent application, application number 202111369100.8, entitled "Perovskite-silicon-based stacked solar cell and manufacturing method thereof," filed with the China Patent Office on November 12, 2021, the entire contents of which are incorporated herein by reference. [Background technology]

[0003] Perovskite-silicon based stacked solar cells are fabricated by using a silicon-based cell as the bottom cell and a perovskite cell as the top cell, connected in between by a tunnel recombination layer.

[0004] During the fabrication of perovskite-silicon-based stacked solar cells, each functional layer of the perovskite cell must be uniformly spin-coated onto the pyramidal textured light-trapping structure of the silicon-based cell. However, the thickness of each functional layer in the perovskite cell is only a few hundred nanometers, making it difficult to deposit it on the micron-sized pyramidal textured light-trapping structure by solution spin-coating. Polishing the bottom cell to reduce the roughness of the textured light-trapping structure would enable the fabrication of perovskite cells by solution spin-coating, but this would eliminate the cell efficiency improvement achieved by the textured light-trapping structure and significantly increase manufacturing costs. Therefore, how to obtain efficient perovskite-silicon-based stacked solar cells while maintaining the textured structure of the bottom cell is an urgent issue that needs to be addressed. Summary of the Invention

[0005] The objective of the present application is to provide a perovskite-silicon based stacked solar cell and a manufacturing method thereof, which can be used to obtain a perovskite-silicon based stacked solar cell that maintains the texture structure of the bottom cell while also achieving a high open-circuit voltage and a high short-circuit current.

[0006] In a first aspect, the present application provides a method for manufacturing a semiconductor device comprising: providing a substrate including, in sequence, a textured silicon-based bottom cell, a charge recombination layer, and a first carrier transport layer; forming a perovskite light-absorbing layer consisting of two perovskite layers, a first perovskite layer and a second perovskite layer, on the first carrier transport layer having a textured structure, wherein the first perovskite layer is fabricated by a solution process and the second perovskite layer is fabricated by a perovskite framework vacuum deposition process.

[0007] In the above technical solution, the first perovskite layer and the second perovskite layer formed on the first carrier transport layer with a textured structure constitute a perovskite light absorbing layer, where the first perovskite layer is fabricated by a solution process, and the second perovskite layer is fabricated by a perovskite framework vacuum deposition method. The perovskite framework vacuum deposition method involves first forming a mixture of PbX2 and CsY by vacuum deposition to form a perovskite framework, where X and Y are chlorine ions (Cl - ), bromide ion (Br - ), iodine ion (I - ), and thiocyanate ion (SCN -), and the mixture of the two materials may be a mixture of two or more materials, preferably a mixture of lead iodide and cesium iodide or a mixture of lead iodide and cesium bromide. The perovskite framework is then coated with an organic amine solution using conventional solution coating methods such as solution spin coating, knife coating, or spraying, and reacted to form a perovskite thin film. The resulting second perovskite layer can conformally cover the peaks and slopes of the textured structure, while the first perovskite layer formed by the solution method can be deposited at the bottom of the textured structure, partially filling it. Based on this, a perovskite light-absorbing layer composed of the two perovskite layers combines the advantages of both the solution method and the vacuum deposition method while avoiding the disadvantages of the two methods. Not only does this effectively maintain the good light-trapping and reflection-reducing effects of the textured structure to achieve a high short-circuit current, but the solution components can also be easily adjusted to achieve the required wide band gap and high open-circuit voltage. This shows that, compared with the prior art, the manufacturing method of the perovskite-silicon-based stacked solar cell provided in the present application effectively balances the tradeoff between maintaining the shape of the textured structure and adjusting the perovskite composition, thereby significantly expanding the process control window and the range of component and material selection for the manufacturing of highly efficient stacked solar cells.

[0008] In some possible implementations, where L is the average vertical distance from the bottom to the top of the textured structure of the first carrier transport layer, the average thickness of the first perovskite layer fabricated by solution processing ranges from greater than 0 to less than 1 / 2L. In this case, the first perovskite layer fabricated by solution processing is deposited at the bottom of the textured structure of the first carrier transport layer, and its thickness is less than half the height of the textured structure. Based on this, the formed perovskite light-absorbing layer can maintain good texture characteristics. That is, when the perovskite light-absorbing layer is irradiated with light, the textured structure can improve photoelectric conversion efficiency through light trapping effects and reflection reduction effects. When the thickness of the first perovskite layer fabricated by solution processing is greater than half the height of the textured structure, the textured structure of the formed perovskite light-absorbing layer has a small height, high light reflectance, and low photoelectric conversion efficiency.

[0009] In some possible implementations, the step of forming a perovskite light-absorbing layer consisting of two perovskite layers, a first perovskite layer and a second perovskite layer, on the first carrier transport layer having a textured structure includes the steps of producing the first perovskite layer on the first carrier transport layer having a textured structure by a solution method, and then producing the second perovskite layer by a perovskite framework vacuum deposition method.

[0010] Using the above technical solution, a perovskite light-absorbing layer can be fabricated using a two-step process: solution deposition followed by perovskite framework vacuum deposition. Specifically, a first perovskite layer is first formed on a textured first carrier transport layer using solution deposition, and then a second perovskite layer is formed on the first perovskite layer using perovskite framework vacuum deposition. Based on this, the first perovskite layer fabricated using solution deposition is deposited on the bottom of the textured structure of the first carrier transport layer, and the band gap of the perovskite can be adjusted by changing the components of the perovskite solution. The second perovskite layer fabricated using perovskite framework vacuum deposition conformally covers the first perovskite layer and any incompletely filled textured structure without changing the textured structure. This maintains the textured structure, providing good light-trapping and reflection-reducing properties, while ensuring that the textured structure is completely covered, avoiding short circuits caused by direct contact between the electrode and the textured structure. The stacked battery manufactured by this method combines the advantages of the conventional stacked battery solutions, avoids the drawbacks faced by the conventional techniques, and effectively balances the contradiction between maintaining the shape of the textured structure and adjusting the solution components.

[0011] In some possible implementations, the step of forming a perovskite light-absorbing layer consisting of two perovskite layers, a first perovskite layer and a second perovskite layer, on the first carrier transport layer having a textured structure includes the steps of manufacturing the second perovskite layer on the first carrier transport layer having a textured structure by a perovskite framework vacuum deposition method, and then manufacturing the first perovskite layer by a solution method.

[0012] Using the above technical solution, a perovskite light-absorbing layer can be fabricated using a two-step process: perovskite framework vacuum deposition followed by a solution process. Specifically, a second perovskite layer is first formed on a first carrier transport layer with a textured structure using the perovskite framework vacuum deposition process, and then a first perovskite layer is formed on the second perovskite layer using a solution process. Based on this, the second perovskite layer fabricated using the perovskite framework vacuum deposition process is conformally bonded to the textured structure of the first carrier transport layer, maintaining the textured structure and achieving good light-trapping and reflection-reducing properties. The first perovskite layer fabricated using the solution process is deposited at the bottom of the textured structure, which is advantageous for achieving a high open-circuit voltage.

[0013] In some possible implementations, the step of forming a perovskite light-absorbing layer consisting of two perovskite layers, a first perovskite layer and a second perovskite layer, on a first carrier transport layer having a textured structure includes the steps of depositing a perovskite framework on the first carrier transport layer having a textured structure by a vacuum deposition method, and then fabricating the first perovskite layer by a solution method, where the solution used in the solution method contains an excess of an organic amine. During the process of forming the first perovskite layer, a material in the perovskite framework is reacted with the organic amine to form the second perovskite layer.

[0014] In the case of adopting the above technical solution, a method of first fabricating a second perovskite layer by vacuum deposition of a perovskite skeleton and then fabricating a first perovskite layer by solution deposition may involve first vacuum deposition of the perovskite skeleton and then simultaneously fabricating the first and second perovskite layers in a one-step process. When the solution used in the solution deposition process is applied to the perovskite skeleton, excess organic amine contained in the solution reacts with the perovskite skeleton to form a second perovskite layer. The resulting second perovskite layer conformally covers the textured structure. The first perovskite layer fabricated by solution deposition is deposited at the bottom of the textured structure covered by the second perovskite layer, partially filling it and forming a perovskite light-absorbing layer.

[0015] In some possible implementations, the solute of the solution used in the solution process is Cs or a mixed perovskite component containing FA or MA, Cs x FA y MA z PbBr m I n (x+y+z=1, m+n=3), and the solvent is one or more of N,N-dimethylformamide and dimethyl sulfoxide. In a one-step method for simultaneously fabricating a first perovskite layer and a second perovskite layer by vacuum deposition of a perovskite skeleton, the solution used not only contains lead iodide, formamidine hydroiodide, methylammonium bromide, and formamidine hydrobromide in the above-mentioned proportions, but also contains an organic amine component in excess of the stoichiometric ratio. The excess organic amine component reacts with the perovskite skeleton to form a second perovskite layer that conformally covers the textured structure.

[0016] In some possible implementations, the perovskite framework vacuum deposition method includes first forming a perovskite framework by vacuum deposition, and then reacting the perovskite framework with an organic amine to form a second perovskite layer, where the perovskite framework is a mixture formed of two or more of PbX2 and CsY, where X and Y are Cl.- , Br - , I - , SCN - The mixture is preferably a mixture of lead iodide and cesium iodide or a mixture of lead iodide and cesium bromide. The organic amine is one or more of formamidine hydroiodide, methylammonium bromide, and formamidine hydrobromide. The main component of the perovskite framework is preferably a mixture of lead iodide and cesium iodide or a mixture of lead iodide and cesium bromide. When vacuum-depositing the perovskite framework, lead iodide and cesium iodide, or lead iodide and cesium bromide, can be vacuum-deposited together as needed, thereby adjusting the band gap of the perovskite to obtain a high open-circuit voltage.

[0017] In some possible implementations, the concentration of the solution used in the solution process is 0.2 mol / L to 3 mol / L. In the process of first vacuum-depositing a perovskite framework and then simultaneously fabricating the first and second perovskite layers in a one-step process, if the concentration of the solution used in the solution process is too low, the solvent in the solution used in the solution process will quickly dissolve the lead iodide in the perovskite framework during the coating process, causing the lead iodide to fly away from the textured structure, damaging the perovskite framework and potentially preventing the formation of a uniform and continuous perovskite thin film. Preferably, if the concentration of the solution used in the solution process is greater than 1 mol / L, the solvent will dissolve the lead iodide in the perovskite slowly during the coating process and will not have enough time to dissolve the lead iodide in the underlying layer, thereby ensuring the shape retention of the textured perovskite thin film.

[0018] In some possible implementations, the perovskite framework vacuum deposition method includes spin-coating an organic amine solution onto the perovskite framework, where the spin-coating speed is 500 rpm to 6000 rpm, and the thickness of the perovskite framework ranges from 50 nm to 1000 nm.

[0019] In some possible implementations, after forming the perovskite light-absorbing layer, the method for manufacturing a perovskite-silicon based stacked solar cell further includes sequentially forming a second carrier transport layer, a transparent conductive layer, and an electrode on the perovskite light-absorbing layer.

[0020] In a second aspect, the present application further provides a perovskite-silicon based stacked solar cell manufactured by the above-described method for manufacturing a perovskite-silicon based stacked solar cell.

[0021] The beneficial effects of the perovskite-silicon based stacked solar cell provided in the second aspect are the same as the beneficial effects of the method for manufacturing the perovskite-silicon based stacked solar cell described in the first aspect or any possible implementation of the first aspect, and detailed description thereof will be omitted here.

[0022] In a third aspect, the present application further provides a perovskite-silicon based stacked solar cell, comprising a silicon-based bottom cell having a textured structure, a charge recombination layer and a first carrier transport layer, which are stacked in sequence, and a perovskite light-absorbing layer covering the first carrier transport layer having a textured structure, wherein the perovskite light-absorbing layer is composed of two perovskite layers, a first perovskite layer and a second perovskite layer, wherein the first perovskite layer is fabricated by a solution process and the second perovskite layer is fabricated by a perovskite framework vacuum deposition process.

[0023] The beneficial effects of the perovskite-silicon based stacked solar cell provided in the third aspect are the same as those of the method for manufacturing the perovskite-silicon based stacked solar cell described in the first aspect, and detailed description thereof will be omitted here.

[0024] In some possible implementations, the first perovskite layer is distributed at least in the valleys of the textured structure of the first carrier transport layer, and the average thickness of the first perovskite layer is half or less of the height of the textured structure. A portion of the second perovskite layer is distributed at least on the slopes and top of the textured structure, and maintains the same texture shape on the slopes and top. A perovskite-silicon based stacked solar cell formed based on this has good shape retention, and the good light trapping and reflection reducing effects of the textured structure are maintained, making it easy to obtain a high short-circuit current. On the other hand, the fabrication of such a perovskite-silicon based stacked solar cell is easier than directly forming a conformal perovskite structure, and the required wide band gap and high open-circuit voltage can be obtained by easily adjusting the solution components.

[0025] In some possible implementations, the thickness of the first carrier transport layer is in the range of 5 nm to 200 nm, and the average thickness of the perovskite light absorbing layer is in the range of 100 nm to 3000 nm.

[0026] In some possible implementations, the average thickness of the first perovskite layer is in the range of 100 nm to 300 nm, and the thickness of the second perovskite layer is in the range of 100 nm to 3000 nm.

[0027] The above has roughly described the technical solution of the present application. In order to make the technical solution of the present application more clearly understood and implemented according to the content of the specification, and to make the above and other objectives, features and advantages of the present application more comprehensible, the following particularly sets forth specific embodiments of the present application. [Brief explanation of the drawings]

[0028] In order to more clearly describe the technical solutions in the embodiments of the present application or related technologies, the following will briefly describe the drawings used in the description of the embodiments or related technologies. Of course, the drawings described below are part of the embodiments of the present application, and those skilled in the art can conceive of other drawings based on these drawings without any creative efforts. [Figure 1] FIG. 1 is a schematic diagram of a perovskite light-absorbing layer produced solely by a solution process in the prior art. [Figure 2] FIG. 1 is a schematic diagram of a perovskite light-absorbing layer manufactured only by vacuum deposition in the prior art. [Figure 3] 1 is a schematic diagram of a first carrier transport layer having a textured structure provided in an embodiment of the present application. [Figure 4] FIG. 1 is a schematic diagram of the fabrication of a first perovskite layer by a solution process, provided in an example of the present application. [Figure 5] FIG. 2 is a schematic diagram of the fabrication of a second perovskite layer by vacuum deposition provided in an example of the present application. [Figure 6] FIG. 1 is a schematic diagram of the fabrication of a second perovskite layer by vacuum deposition first provided in an example of the present application. [Figure 7] FIG. 2 is a schematic diagram of the fabrication of a first perovskite layer by a solution process provided in an example of the present application. [Figure 8] FIG. 1 is a structural schematic diagram of a perovskite-silicon-based stacked solar cell provided in an example of the present application. [Figure 9] FIG. 1 is a schematic diagram of the texture structure of a perovskite-silicon based stacked solar cell provided in an example of the present application. DETAILED DESCRIPTION OF THE INVENTION

[0029] In order to clarify the objectives, technical solutions and advantages of the embodiments of the present application, the following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the drawings in the embodiments of the present application, and it should be understood that the described embodiments are only a part of the embodiments of the present application, and are not all of the embodiments. Based on the embodiments of the present application, all other embodiments that can be obtained by those skilled in the art without any creative efforts fall within the scope of protection of the present application.

[0030] When an element is referred to as being "fixed to" or "mounted on" another element, it should be understood that it may be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it may be directly connected to the other element or indirectly connected to the other element.

[0031] Additionally, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or the quantity of the indicated technical features. Thus, a feature qualified as "first" or "second" may expressly or imply the inclusion of one or more of that feature. In this description, unless expressly and specifically limited, "plurality" means two or more than two. Unless expressly and specifically limited, "some" means one or more than one.

[0032] In the description of this application, orientations or positional relationships indicated by terms such as "upper," "lower," "front," "rear," "left," and "right" are orientations or positional relationships indicated based on the drawings, and their purpose is merely to facilitate and simplify the description of this application, and it should be understood that they should not be construed as limiting this application, as they do not explicitly or implicitly indicate that the devices or elements shown necessarily have a specific orientation, or are configured or operated in a specific orientation.

[0033] Organic-inorganic hybrid perovskite solar cells have attracted widespread attention worldwide as a new, highly efficient, low-cost solar cell. In just a few years, the photoelectric conversion efficiency of perovskite cells has rapidly increased from 3.8% in 2009 to over 25%, approaching the efficiency of commercial silicon-based solar cells. Crystalline silicon cells are a highly efficient crystalline silicon photovoltaic cell technology, with cell efficiencies (26.7%) approaching the theoretical limit (29.4%). Stacked cell technology is an effective means of surpassing the efficiency of conventional crystalline silicon photovoltaic cells. As a multi-component cell, the absorption spectral bandgap of perovskite cells can be tuned within the range of 1.5–1.8 eV by component composition. Perovskites are ideal materials for stacked top-cell cells. In a crystalline silicon-perovskite stacked battery, the crystalline silicon cell acts as the bottom cell, absorbing solar energy in the 800-1200 nanometer wavelength range, while the perovskite cell acts as the top cell, absorbing solar energy in the 300-800 nanometer wavelength range. The two cells are connected via a charge recombination layer, forming a battery with both ends connected in series. The overall open-circuit voltage of the stacked battery is the sum of the voltages of the top and bottom cells, and the current through the stacked battery requires good current matching between the top and bottom cells. Crystalline silicon-perovskite stacked batteries are expected to achieve photoelectric conversion efficiencies of over 30%.

[0034] Several literature studies have reported that crystalline silicon-perovskite stacked cells have achieved conversion efficiencies of over 25%. Typical perovskite cells use solution spin-coating to fabricate each functional layer within the device. High-efficiency crystalline silicon cells generally use a double-sided textured light-trapping structure to enhance solar absorption and utilization, further improving the cell's conversion efficiency. The micro-pyramid-like textured light-trapping structure in crystalline silicon cells poses a major challenge to the fabrication of perovskite top cells using solution processes. The difficulty lies in the fact that the thickness of each functional layer in perovskite cells is typically several hundred nanometers, making it difficult to deposit it uniformly and conformally on the micro-pyramid-like textured surface. The current solution involves polishing the crystalline silicon bottom cell to reduce the texture roughness, thereby enabling the fabrication of perovskite top cells using solution processes. While this method can fabricate perovskite top and stacked cells using solution processing, it sacrifices the improved cell efficiency due to the textured structure and its light-trapping effect. Furthermore, the polishing process significantly increases the overall cell manufacturing cost, making it difficult to realize the efficiency advantages of stacked cells. To achieve high efficiency stacked cells, the key is to preserve the textured structure of the bottom cell and fabricate perovskite cells directly on the bottom cell texture. There are currently two technical solutions for fabricating perovskite stacked cells on textured crystalline silicon bottom cells. As shown in Figures 1 and 2, one method involves first conformally depositing a lead iodide thin film on the texture, followed by spin-coating an organic amine solution and reacting it in situ to form perovskite. In this method, lead iodide acts as an anchor, ensuring that the perovskite film conformally forms with the texture undulations. The other method is to fabricate a substrate with a small texture (e.g., a texture of 2 microns in size) and then spin-coat a perovskite solution directly onto the small texture in a one-step method to fabricate a perovskite thin film.When using one-step spin coating on small textures, the thickness of the perovskite thin film must be adjusted by adjusting parameters such as solution concentration and rotation speed to ensure that the thickness is not too thick and that the pyramidal apexes of the texture are completely covered. Both of the above-mentioned solutions have limitations. In the first solution, the deposited lead iodide thin film is dense, resulting in low reactivity of the components, making it difficult for the spin-coated organic amine solution to penetrate to the bottom and completely react with the lead iodide. It is therefore difficult to ensure that the organic amine reacts uniformly and completely with the lead iodide thin film during spin coating to form large-sized perovskite crystal particles. Therefore, it is difficult to achieve a wide bandgap perovskite top cell and high open-circuit voltage through composition adjustment. Currently, the highest conversion efficiency reported in the literature using this method is only 25.4%, and the difficulty lies in the limitations of composition adjustment. While the second solution allows for easy adjustment of the components to achieve a wide bandgap and high open-circuit voltage, the resulting thin film lacks shape retention, filling the valleys of the texture at the bottom and forming a flat thin film at the top, resulting in a loss of the texture's anti-reflection properties, high reflectivity, low absorption, and low current. Therefore, to achieve a stacked cell with both high open-circuit voltage and high current, and thus a highly efficient crystalline silicon-perovskite stacked cell, a method for depositing perovskite thin films in large-textured crystalline silicon cells needs to be developed.

[0035] To solve the above technical problems, the embodiments of the present application provide a method for manufacturing a perovskite-silicon based stacked solar cell.

[0036] As shown in FIGS. 3 to 8, the method for fabricating a perovskite-silicon based stacked solar cell provided in the present application includes the following steps:

[0037] A substrate is provided that includes a silicon-based bottom cell having a textured structure, a charge recombination layer 107, and a first carrier transport layer 108, which are stacked in sequence.

[0038] First, prepare a silicon-based battery. Take an n-type silicon-based bottom battery as an example, and its manufacturing method may be as follows:

[0039] An n-type crystalline silicon wafer 101 is prepared. In practical applications, the n-type crystalline silicon wafer 101 can be selected from commercial grade silicon wafers with a resistivity of 1 Ω.cm to 10 Ω.cm and a thickness of 50 μm to 300 μm.

[0040] The n-type crystalline silicon wafer 101 is sequentially subjected to texturing and cleaning processes to form a textured n-type crystalline silicon wafer 101. The n-type crystalline silicon wafer 101 serves as a light-absorbing layer for the silicon-based bottom cell, converting photons into photo-generated carriers (electron-hole pairs).

[0041] Intrinsic amorphous silicon passivation layers are deposited on both sides of the n-type crystalline silicon wafer 101, forming a first passivation layer 102 on the front side of the n-type crystalline silicon wafer 101 and a second passivation layer 103 on the back side of the n-type crystalline silicon wafer 101. The first passivation layer 102 and the second passivation layer 103 mainly serve to passivate dangling bonds on the surface of the n-type crystalline silicon wafer 101.

[0042] In practical applications, the intrinsic amorphous silicon passivation layer can be fabricated by processes such as plasma enhanced chemical vapor deposition (PECVD), hot filament chemical vapor deposition, catalytic chemical vapor deposition, etc. The thickness of both the first passivation layer 102 and the second passivation layer 103 may be 1 nm to 20 nm.

[0043] A phosphorus-doped n-type amorphous / microcrystalline silicon layer 104 is deposited on the first passivation layer 102 to form a front emitter. In practical applications, the n-type amorphous / microcrystalline silicon layer 104 can be manufactured by processes such as PECVD, hot filament chemical vapor deposition, or catalytic chemical vapor deposition. The thickness of the n-type amorphous / microcrystalline silicon layer 104 may be 1 nm to 30 nm.

[0044] A boron-doped p-type amorphous / microcrystalline silicon layer 105 is deposited on the second passivation layer 103 to form a back-surface field structure. In practical applications, the p-type amorphous / microcrystalline silicon layer 105 can be manufactured by processes such as PECVD, hot filament chemical vapor deposition, or catalytic chemical vapor deposition. The thickness of the p-type amorphous / microcrystalline silicon layer 105 may be 1 nm to 30 nm.

[0045] A first transparent conductive layer 106 is formed on the p-type amorphous / microcrystalline silicon layer 105. The first transparent conductive layer 106 mainly serves to collect photo-generated carriers and transport them to the back metal electrode 113. Specifically, the material of the first transparent conductive layer 106 may be one or more of, but is not limited to, indium tin oxide (ITO), tungsten-doped indium oxide (In2O3:W, abbreviated as IWO), indium zinc oxide (IZO), and titanium-doped indium oxide thin film (ITiO).

[0046] In practical applications, a magnetron sputtering process can be used to fabricate the first transparent conductive layer 106. The thickness of the first transparent conductive layer 106 may be 30 nm to 120 nm.

[0047] The above process steps result in the fabrication of a silicon-based bottom cell. Because the crystalline silicon substrate has a textured structure, the functional layers formed on the crystalline silicon substrate, including the first passivation layer 102, the second passivation layer 103, the n-type amorphous / microcrystalline silicon layer 104, the p-type amorphous / microcrystalline silicon layer 105, and the first transparent conductive layer 106, also have textured structures.

[0048] A charge recombination layer 107 is deposited on the n-type amorphous / microcrystalline silicon layer 104 to realize tunnel recombination collection of photo-generated carriers. The charge recombination layer 107 may be made of transparent metal oxides such as tin-doped indium oxide (ITO), zinc-doped indium oxide (IZO), tungsten-doped indium oxide (IWO), titanium-doped indium oxide (ITiO), fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO), etc. In practical applications, the charge recombination layer 107 can be fabricated using a magnetron sputtering process.

[0049] Of course, the charge recombination layer 107 may be made of heavily doped silicon and have a reverse direction to the PN junction of the bottom cell. For example, in the charge recombination layer 107 mainly composed of an n-type doped microcrystalline silicon layer 1070 and a p-type doped microcrystalline silicon layer 1071, the p-type doped microcrystalline silicon layer 1071 is adjacent to the perovskite cell described below, and the n-type doped microcrystalline silicon layer 1070 is adjacent to the silicon-based bottom cell. Specifically, the n-type doped microcrystalline silicon layer 1070 may be a phosphorus-doped microcrystalline silicon layer, and the p-type doped microcrystalline silicon layer 1071 may be a boron-doped microcrystalline silicon layer. In practical applications, the charge recombination layer 107 may be manufactured using processes such as PECVD, hot filament chemical vapor deposition, and catalytic chemical vapor deposition. The thickness of each of the n-type doped microcrystalline silicon layer 1070 and the p-type doped microcrystalline silicon layer 1071 may be 1 nm to 30 nm.

[0050] Forming a perovskite cell on the charge recombination layer 107 specifically includes the following steps:

[0051] A first carrier transport layer 108 is formed on the charge recombination layer 107 to realize vertical transport of photogenerated carriers. The material of the first carrier transport layer 108 may be, but is not limited to, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), 2,2′,7,7′-tetrakis-(dimethoxydiphenylamine)-spirofluorene (Spiro-OMeTAD), 2,2′,7,7′-tetrakis(di-p-tolylamino)spiro-9,9′-difluorene (Spiro-TTB), or nickel oxide (NiO).

[0052] In practical applications, the first carrier transport layer 108 can be fabricated using processes such as magnetron sputtering, laser pulse deposition, thermal evaporation coating, chemical vapor deposition, solution coating, gel-sol or hydrothermal nanoparticle synthesis, etc. The thickness of the first carrier transport layer 108 may range from 5 nm to 200 nm.

[0053] A perovskite light-absorbing layer 109 is formed on the first carrier transport layer 108. The components of the perovskite light-absorbing layer 109 are a combination of one or more perovskite structure materials. The chemical formula of the perovskite material may be ABX3, where A is one or more of a CH3NH3 cation, a C4H9NH3 cation, a NH2=CHNH2 cation, and a Cs cation; B is a Pb 2+ , Sn 2+ and X is one or a combination of two of I - , Cl - , Br - One or more of the following.

[0054] As shown in FIGS. 3 to 7, the manufacture of the perovskite light-absorbing layer 109 includes the following steps:

[0055] A perovskite light-absorbing layer 109 consisting of two perovskite layers, a first perovskite layer 1090 and a second perovskite layer 1091, is formed on a first carrier transport layer 108 having a textured structure. The first perovskite layer 1090 is manufactured by a solution method. The second perovskite layer 1091 is manufactured by a perovskite framework vacuum deposition method.

[0056] At this time, the first perovskite layer 1090 and the second perovskite layer 1091 formed by the two-step method on the textured first carrier transport layer 108 constitute the perovskite light absorbing layer 109, where the first perovskite layer 1090 is manufactured by a solution method, and the second perovskite layer 1091 is manufactured by a perovskite skeleton vacuum deposition method. The perovskite skeleton vacuum deposition method here involves first forming a mixture of PbX2 and CsY by vacuum deposition to form a perovskite skeleton, where X and Y are chlorine ions (Cl - ), bromide ion (Br - ), iodine ion (I - ) and thiocyanate ion (SCN -), and the mixture of the two may be a mixture of two or more materials, preferably a mixture of lead iodide and cesium iodide or a mixture of lead iodide and cesium bromide. The perovskite framework is then coated with an organic amine solution using a conventional solution coating method, such as solution spin coating, knife coating, or spraying, and reacted to form a perovskite thin film. The formed second perovskite layer 1091 can conformally cover the peaks and slopes of the textured structure, while the first perovskite layer 1090 formed by the solution method can be deposited on the bottom of the textured structure to partially fill it. Based on this, the perovskite light-absorbing layer 109 composed of the above two perovskite layers combines the advantages of both the solution method and the perovskite framework vacuum deposition method while avoiding the disadvantages of the two methods. Not only was the excellent light-trapping and reflection-reducing effects of the textured structure effectively maintained to obtain a high short-circuit current, but the solution composition could also be easily adjusted to obtain the required wide bandgap and high open-circuit voltage. This demonstrates that, compared to conventional techniques, the fabrication method for perovskite-silicon-based stacked solar cells provided herein effectively balances the tradeoff between maintaining the textured structure shape and adjusting the perovskite composition, significantly expanding the process control window and the range of component and material options for fabricating highly efficient stacked solar cells.

[0057] Furthermore, when the average vertical distance from the bottom to the top of the textured structure of the first carrier transport layer 108 is L, the average thickness of the first perovskite layer 1090 produced by solution processing is greater than 0 and less than 1 / 2L. In this case, the first perovskite layer 1090 produced by solution processing is deposited at the bottom of the textured structure of the first carrier transport layer 108, and its thickness is less than half the height of the textured structure. Based on this, the formed perovskite light-absorbing layer 109 can maintain good texture characteristics. That is, when the perovskite light-absorbing layer 109 is irradiated with light, the textured structure can improve photoelectric conversion efficiency through light trapping effects and reflection reduction effects. When the thickness of the first perovskite layer 1090 produced by solution processing is more than half the height of the textured structure, the textured structure of the formed perovskite light-absorbing layer 109 has a small height, high light reflectance, and low photoelectric conversion efficiency. The thickness of the first perovskite layer 1090 produced by the solution process is defined as the height of the solution deposited on the textured structure in the vertical direction from the contact point with the textured structure to the highest point of the deposited solution, and therefore the average thickness of the first perovskite layer 1090 is the average value of these heights.

[0058] As shown in Figures 3, 4 and 5, in some possible implementations, the perovskite light-absorbing layer 109 can be manufactured by a two-step method of solution processing followed by perovskite skeleton vacuum deposition. Specifically, the step of forming the perovskite light-absorbing layer 109 consisting of two perovskite layers, a first perovskite layer 1090 and a second perovskite layer 1091, on the first carrier transport layer 108 having a textured structure includes the steps of manufacturing the first perovskite layer 1090 on the first carrier transport layer 108 having a textured structure by a solution processing, and then manufacturing the second perovskite layer 1091 by a perovskite skeleton vacuum deposition. Based on this, the first perovskite layer 1090 is first formed on the first carrier transport layer 108 having a textured structure by a solution processing, and then the second perovskite layer 1091 is formed on the first perovskite layer 1090 by a perovskite skeleton vacuum deposition. Based on this, the first perovskite layer 1090 fabricated by a solution method is deposited on the bottom of the textured structure of the first carrier transport layer 108, and the bandgap of the perovskite can be adjusted by changing the composition of the perovskite solution. The second perovskite layer 1091 fabricated by a perovskite framework vacuum deposition method conformally covers the first perovskite layer 1090 and the incompletely filled textured structure, thereby maintaining the textured structure and achieving good light trapping and reflection reduction properties, while ensuring that the textured structure is covered and avoiding short circuits caused by direct contact of the electrode 113 with the textured structure. A stacked battery fabricated in this way combines the advantages of traditional stacked battery solutions while avoiding the drawbacks faced by the prior art, effectively balancing the tradeoff between maintaining the shape of the textured structure and adjusting the composition of the solution.

[0059] Figure 9 exemplarily shows a schematic diagram of the texture structure of the perovskite-silicon-based stacked solar cell provided in the examples of the present application. As shown in Figure 9, in the pyramidal structure of the texture structure, the second perovskite layer 1091 produced by the perovskite framework vacuum deposition method has a stepped structure.

[0060] As shown in Figures 3, 6 and 7, in some possible implementations, the perovskite light-absorbing layer 109 can be manufactured by a two-step method of perovskite skeleton vacuum deposition followed by solution deposition. Specifically, the step of forming the perovskite light-absorbing layer 109 consisting of two perovskite layers, a first perovskite layer 1090 and a second perovskite layer 1091, on the first carrier transport layer 108 having a textured structure includes the steps of manufacturing the second perovskite layer 1091 on the first carrier transport layer 108 having a textured structure by perovskite skeleton vacuum deposition, and then manufacturing the first perovskite layer 1090 by solution deposition. Based on this, a second perovskite layer 1091 is first formed on the first carrier transport layer 108 having a textured structure by a perovskite skeleton vacuum deposition method, and then a first perovskite layer 1090 is formed on the second perovskite layer 1091 by a solution process. Based on this, the second perovskite layer 1091 produced by the perovskite skeleton vacuum deposition method is conformally bonded to the textured structure of the first carrier transport layer 108, maintaining the textured structure and achieving good light trapping effects and reflection reduction properties. The first perovskite layer 1090 produced by the solution process is deposited at the bottom of the textured structure, which is advantageous for achieving a high open-circuit voltage.

[0061] In some possible implementations, in a method of first producing the second perovskite layer 1091 by a perovskite skeleton vacuum deposition method and then producing the first perovskite layer 1090 by a solution process, the perovskite skeleton may be first vacuum-deposited, and then the first perovskite layer 1090 and the second perovskite layer 1091 may be simultaneously produced by a one-step method. Specifically, the step of forming the perovskite light-absorbing layer 109 consisting of two perovskite layers, the first perovskite layer 1090 and the second perovskite layer 1091, on the first carrier transport layer 108 having a textured structure includes the steps of depositing the perovskite skeleton on the first carrier transport layer 108 having a textured structure by a vacuum deposition method, and then producing the first perovskite layer 1090 by a solution process. Here, the solution used in the solution process contains an excess of an organic amine. During the process of forming the first perovskite layer 1090, the material in the perovskite skeleton is reacted with an organic amine to form a second perovskite layer 1091. Based on this, when the solution used in the solution process is applied to the perovskite skeleton, the excess organic amine contained in the solution reacts with the perovskite skeleton to form a second perovskite layer 1091. The formed second perovskite layer 1091 conformally covers the textured structure. The first perovskite layer 1090 produced by the solution process is deposited on the bottom of the textured structure covered by the second perovskite layer 1091, partially filling it, and forming the perovskite light-absorbing layer 109.

[0062] In some instances, the solute of the solution used in the solution process is Cs or a mixed perovskite component containing FA or MA, Cs x FA y MA z PbBr m I n(x+y+z=1, m+n=3), and the solvent is one or more of N,N-dimethylformamide (DMF) and dimethyl sulfoxide (DMSO). In a one-step method for simultaneously fabricating a first perovskite layer 1090 and a second perovskite layer 1091, a solution containing lead iodide, formamidine hydroiodide, methylammonium bromide, and formamidine hydrobromide in the above-described proportions, as well as an organic amine component in excess of the stoichiometric ratio, reacts with the perovskite framework to produce a second perovskite layer 1091 that conformally covers the textured structure.

[0063] In some examples, the perovskite framework vacuum deposition method includes first forming a perovskite framework by vacuum deposition, and then reacting the perovskite framework with an organic amine to form a second perovskite layer 1091. Here, the perovskite framework is a mixture formed from two or more of PbX2 and CsY, where X and Y are chlorine ions (Cl - ), bromide ion (Br - ), iodine ion (I - ) and thiocyanate ion (SCN - ) are one or more selected from the group consisting of lead iodide and cesium iodide, and lead iodide and cesium bromide. The mixture is preferably a mixture of lead iodide and cesium iodide, or a mixture of lead iodide and cesium bromide. The organic amine is one or more of formamidine hydroiodide, methylammonium bromide, and formamidine hydrobromide. The main component of the perovskite framework is preferably a mixture of lead iodide (PbI2) and cesium iodide (CsI), or a mixture of lead iodide (PbI2) and cesium bromide (CsBr). When the perovskite framework is vacuum-deposited, lead iodide and cesium iodide, or lead iodide and cesium bromide, can be vacuum-deposited together as needed, thereby adjusting the band gap of the perovskite to obtain a high open-circuit voltage.

[0064] In practical applications, the thickness of the perovskite framework ranges from 50 nm to 1000 nm.

[0065] In practical applications, the organic amine solution can be applied to the perovskite skeleton, followed by annealing and drying for 5 to 30 minutes at a temperature of 100°C to 200°C to form the second perovskite layer 1091. When the perovskite skeleton is a mixture of lead iodide (PbI2) and cesium bromide (CsBr), the evaporation rate of lead iodide during vacuum deposition can be 0.1 Å / s to 10 Å / s, and the evaporation rate of cesium bromide can be 0.05 Å / s to 0.2 Å / s. When the organic amine solution is a mixture of formamidine hydroiodide (FAI) and formamidine hydrobromide (FABr), the solvent can be ethanol or isopropyl alcohol.

[0066] In some examples, the concentration of the solution used in the solution process is 0.2 mol / L to 3 mol / L. In the process of first vacuum-depositing a perovskite skeleton and then simultaneously fabricating the first perovskite layer 1090 and the second perovskite layer 1091 using a one-step process, if the concentration of the solution used in the solution process is too low, the solvent in the solution used in the solution process will quickly dissolve the lead iodide in the perovskite skeleton during the coating process, causing the lead iodide to fly away from the textured structure, damaging the perovskite skeleton and potentially preventing the formation of a uniform and continuous perovskite thin film. Preferably, if the concentration of the solution used in the solution process is greater than 1 mol / L, the solvent will dissolve the lead iodide in the perovskite slowly during the coating process and will not have enough time to dissolve the lead iodide in the underlying layer, thereby ensuring the shape retention of the perovskite thin film in the textured structure. In the method of first vacuum-depositing a perovskite skeleton and then simultaneously producing the first perovskite layer 1090 and the second perovskite layer 1091 in a one-step process, the concentration of the solution used is 0.1 mol / L to 3 mol / L.

[0067] In practical applications, the solution used in the solution method is Cs 0.05 FA 0.8 MA 0.15 PbBr 0.6 I2.4 Alternatively, the solution may be an N,N-dimethylformamide (DMF) / dimethyl sulfoxide (DMSO) (4:1) solution of the above. In the process of producing the first perovskite layer 1090 by solution processing, after applying the solution onto the first carrier transport layer 108 having a textured structure by solution processing, the surface of the solution is first dried using a poor solvent or an air knife blowing method, etc., and then annealing and drying treatment is carried out at a temperature of 70°C to 190°C for 5 to 60 minutes, thereby forming the first perovskite layer 1090. The average thickness of the first perovskite layer 1090 is in the range of 100 nm to 300 nm.

[0068] In practical applications, first, a perovskite framework is vacuum-deposited, and then the first perovskite layer 1090 and the second perovskite layer 1091 are simultaneously fabricated in a one-step process. When the perovskite framework is a mixture of lead iodide (PbI2) and cesium bromide (CsBr), the solution used in the solution process is a mixture of the perovskite components (Cs 0.05 FA 0.8 MA 0.15 PbBr 0.6 I 2.4 The second perovskite layer 1091 may be a DMF / DMSO (4:1) solution of excess formamidine hydroiodide (FAI) and formamidine hydrobromide (FABr), with the concentrations of FAI and FABr ranging from 0.1 mol / L to 3 mol / L. In the process of fabricating the second perovskite layer 1091 by vacuum deposition of the perovskite skeleton, the solution is spin-coated onto the perovskite skeleton, followed by extraction with a poor solvent (e.g., anisole) and annealing at a temperature of 100°C to 200°C for 5 to 30 minutes, ultimately forming the perovskite light-absorbing layer 109.

[0069] In some examples, the perovskite framework vacuum deposition method involves spin-coating an organic amine solution onto the perovskite framework, where the spin-coating speed is 500 rpm to 6000 rpm, and the thickness of the perovskite framework ranges from 50 nm to 1000 nm.

[0070] In practical applications, the thickness of the second perovskite layer 1091 ranges from 100 nm to 3000 nm. Because the perovskite light-absorbing layer 109 is composed of one first perovskite layer 1090 manufactured by a solution process and one second perovskite layer 1091 manufactured by a perovskite skeleton vacuum deposition process, the thickness of the perovskite light-absorbing layer 109 is defined as the vertical distance from the contact point with the upper part of the textured structure of the first carrier transport layer 108 to the highest point covered by the perovskite light-absorbing layer 109. The average thickness of the perovskite light-absorbing layer 109 ranges from 100 nm to 3000 nm.

[0071] As shown in Figure 8, a second carrier transport layer 111 is formed on the perovskite light absorption layer 109 to realize vertical transport of photogenerated carriers. The material of the second carrier transport layer 111 is C 60 [6,6]-phenyl-C61-butyric acid methyl ester (PCBM), tin dioxide (SnO2), titanium dioxide (TiO2), but are not limited to these.

[0072] In practical applications, first, a single LiF, C layer is deposited on the perovskite light absorbing layer 109 as the second carrier transport interface layer 110 using a vacuum deposition process. 60 The thin film layer or PCBM thin film layer can be fabricated, and then the second carrier transport layer 111 made of SnO2 or TiO2 can be fabricated using atomic layer deposition (ALD), chemical vapor deposition, physical vapor deposition, solution coating, etc. The thickness of the second carrier transport layer 111 can be 1 nm to 30 nm. It is understood that in practical applications, the second carrier transport interface layer 110 can be omitted.

[0073] When second carrier transport interface layer 110 includes second carrier transport interface layer-1 1100 and second carrier transport interface layer-2 1101, second carrier transport interface layer-1 1100 may be vacuum-deposited LiF, and second carrier transport interface layer-2 1101 may be vacuum-deposited C 60 The thickness of LiF may be in the range of 0.1 nm to 10 nm, and C 60The thickness range is 1 nm to 20 nm.

[0074] 8, a second transparent conductive layer 112 is formed on the second carrier transport layer 111 to transport electrons laterally to the electrode 113 and reduce light reflection. The thickness of the second transparent conductive layer 112 ranges from 30 nm to 200 nm. The material and manufacturing method of the second transparent conductive layer 112 may refer to those of the first transparent conductive layer 106, and will not be described in detail here.

[0075] An electrode 113 is formed on the first transparent conductive layer 106 and the second transparent conductive layer 112 to collect current. In practical applications, the thin gate line and main gate line of the electrode 113 can be manufactured by screen printing or mask deposition. The material of the electrode 113 can be a metal with good conductivity, such as silver, copper, or aluminum. The thickness of the electrode 113 ranges from 100 nm to 500 nm.

[0076] The manufacturing method of the perovskite-silicon-based stacked solar cell described in the embodiments of the present application is not limited to n-type silicon wafers, but can also be applied to perovskite stacked cells integrated with perovskite cells such as p-type crystalline silicon cells, TOPCON cells, polycrystalline silicon cells, and ingot single-crystalline silicon cells, as well as other types of perovskite stacked cells, including copper indium gallium selenium-perovskite stacked cells, perovskite-perovskite stacked cells, gallium arsenide-perovskite stacked cells, and organic photovoltaic-perovskite stacked cells, demonstrating good versatility and compatibility. In the manufacturing method of the perovskite-silicon-based stacked solar cell described above, the first carriers are holes and the second carriers are electrons, so the manufactured first carrier transport layer 108 serves as a hole transport layer, and the manufactured second carrier transport layer 111 serves as an electron transport layer. The manufacturing method of the perovskite-silicon-based stacked solar cell provided in the examples of this application is not limited to the inverted perovskite-top cell structure using a hole transport layer as the substrate, but can also be applied to the normal perovskite-top cell structure using an electron transport layer as the substrate. That is, the functional layers of the cell structure can be, from bottom to top, a textured silicon-based cell, a tunnel junction or metal oxide composite layer, an electron transport layer, a first perovskite layer and a second perovskite layer, a hole transport layer, a buffer layer, a metal oxide transparent electrode, and an electrode.

[0077] As shown in Figure 8, an embodiment of the present application further provides a perovskite-silicon based stacked solar cell, which can be obtained by the above-mentioned method for manufacturing a perovskite-silicon based stacked solar cell.

[0078] The beneficial effects of the perovskite-silicon based stacked solar cell provided in the examples of the present application are the same as the beneficial effects of the manufacturing method of the perovskite-silicon based stacked solar cell described above.

[0079] An embodiment of the present application further provides a perovskite-silicon based stacked solar cell, which includes a silicon-based bottom cell with a textured structure, a charge recombination layer, and a first carrier transport layer, which are sequentially stacked, and a perovskite light-absorbing layer covering the first carrier transport layer with a textured structure, wherein the perovskite light-absorbing layer is composed of two perovskite layers, a first perovskite layer and a second perovskite layer, where the first perovskite layer is fabricated by a solution process and the second perovskite layer is fabricated by a perovskite framework vacuum deposition process.

[0080] In some possible implementations, the first perovskite layer is distributed at least in the valleys of the textured structure of the first carrier transport layer, and the average thickness of the first perovskite layer is half or less of the height of the textured structure. A portion of the second perovskite layer is distributed at least on the slopes and top of the textured structure, and maintains the same texture shape on the slopes and top. A perovskite-silicon-based stacked solar cell formed based on this has good shape retention, and the good light-trapping and reflection-reducing effects of the textured structure are maintained, making it easy to obtain a high short-circuit current. On the other hand, the fabrication of such a perovskite-silicon-based stacked solar cell is easier than directly forming a conformal perovskite structure, and the required wide band gap and high open-circuit voltage can be obtained by easily adjusting the solution components.

[0081] Furthermore, the layer distributed in the valleys of the texture structure of the first carrier transport layer may be referred to as the second perovskite layer, and the layer distributed on the slopes and top of the texture structure may be referred to as the first perovskite layer.

[0082] In some possible implementations, the thickness of the first carrier transport layer is in the range of 5 nm to 200 nm, the average thickness of the perovskite light absorption layer is in the range of 100 nm to 3000 nm, and the thickness of the second carrier transport layer is in the range of 1 nm to 30 nm.

[0083] In some possible implementations, the average thickness of the first perovskite layer is in the range of 100 nm to 300 nm, and the thickness of the second perovskite layer is in the range of 100 nm to 3000 nm.

[0084] To demonstrate the performance of the perovskite-silicon based stacked solar cell manufactured by the method for manufacturing the perovskite-silicon based stacked solar cell provided in the examples of the present application, the following will be described in comparison with the examples and comparative examples.

[0085] Example 1 The method for manufacturing the perovskite-n-type silicon-based stacked solar cell provided in the embodiment of the present application is specifically as follows.

[0086] In the first step, a commercial-grade n-type silicon wafer with a resistivity of 3 Ω·cm, a thickness of 180 μm, and a texture dimension of 4 μm is prepared. The silicon wafer undergoes sequential texturing and cleaning processes to produce a textured n-type single-crystalline silicon substrate.

[0087] In the second step, an intrinsic amorphous silicon passivation layer (5 nm thick) is deposited on both sides of the n-type single-crystalline silicon substrate using a PECVD apparatus, forming a first passivation layer on the front side of the n-type single-crystalline silicon substrate and a second passivation layer on the back side of the n-type single-crystalline silicon substrate.

[0088] In the third step, phosphorus doping (doping concentration 10) was performed on the first passivation layer using a PECVD system. 20 cm -3 ) to form the front emitter.

[0089] In the fourth step, boron doping (doping concentration 10) was performed on the second passivation layer using a PECVD system. 19 cm -3 ) and a p-type amorphous silicon layer (thickness 10 nm) is deposited to form a back surface field structure.

[0090] In the fifth step, a first transparent conductive layer (100 nm thick) made of ITO material is fabricated on the p-type amorphous silicon layer using a magnetron sputtering process.

[0091] In the sixth step, an n-type doped microcrystalline silicon layer and a p-type doped microcrystalline silicon layer are sequentially deposited on the n-type amorphous silicon layer using a PECVD apparatus to form a tunnel recombination layer (thickness: 8 nm).

[0092] In the seventh step, a hole transport layer (thickness 15 nm) made of spiro-TTB material is fabricated on the tunnel recombination layer using a vacuum evaporation process, and the evaporation rate is 0.2 Å / s.

[0093] In the eighth step, a perovskite component (Cs) with a concentration of 1.2 mol / L was deposited on the textured hole transport layer using a spin coating process. 0.05 FA 0.8 MA 0.15 PbBr 0.6 I 2.4 The first perovskite layer (average thickness 200 nm) was formed by spin-coating a DMF / DMSO (4:1) solution of the compound (II) at 2000 rpm, followed by extraction with anisole and annealing at 100°C for 20 minutes.

[0094] In the ninth step, lead iodide and cesium bromide are formed on the first perovskite layer using a vacuum deposition process, where the rate of cesium bromide (CsBr) is 0.1 Å / s and the rate of lead iodide (PbI2) is 2 Å / s, with a total thickness of 400 nm.

[0095] A mixed solution of FAI and FABr was prepared, with a molar ratio of FAI to FABr of 3:1, and the solvent was ethanol or isopropyl alcohol. 80 μL of the mixed solution of FAI and FABr was spin-coated onto the lead iodide and cesium bromide layer, allowing the reaction to occur, forming a second perovskite layer (550 nm thick).

[0096] The second perovskite layer is annealed at a temperature of 150°C for 20 minutes to form a perovskite light-absorbing layer (average thickness 550 nm).

[0097] In the tenth step, a thin film layer of LiF (1 nm thick) and C were deposited on the perovskite light-absorbing layer using a vacuum deposition process. 60 A thin film layer (10 nm thick) is sequentially fabricated, which serves as an electron transport interface layer (11 nm thick).

[0098] In the 11th step, an electron transport layer (10 nm thick) made of SnO2 is fabricated using atomic layer deposition (ALD) process.

[0099] In the twelfth step, a second transparent conductive layer (100 nm thick) made of ITO material is formed on the electron transport layer using a magnetron sputtering process.

[0100] In a thirteenth step, a silver electrode is formed on the first transparent conductive layer and the second transparent conductive layer using a screen printing process.

[0101] Example 2 The method for manufacturing the perovskite-n-type silicon-based stacked solar cell provided in the embodiment of the present application is specifically as follows.

[0102] In the first step, a commercial-grade n-type silicon wafer with a resistivity of 3 Ω·cm, a thickness of 180 μm, and a texture dimension of 4 μm is prepared. The silicon wafer undergoes sequential texturing and cleaning processes to produce a textured n-type single-crystalline silicon substrate.

[0103] In the second step, an intrinsic amorphous silicon passivation layer (5 nm thick) is deposited on both sides of the n-type single-crystalline silicon substrate using a PECVD apparatus, forming a first passivation layer on the front side of the n-type single-crystalline silicon substrate and a second passivation layer on the back side of the n-type single-crystalline silicon substrate.

[0104] In the third step, phosphorus doping (doping concentration 10) was performed on the first passivation layer using a PECVD system. 20 cm -3 ) to form the front emitter.

[0105] In the fourth step, boron doping (doping concentration 10) was performed on the second passivation layer using a PECVD system. 19 cm -3 ) and a p-type amorphous silicon layer (thickness 10 nm) is deposited to form a back surface field structure.

[0106] In the fifth step, a first transparent conductive layer (100 nm thick) made of ITO material is fabricated on the p-type amorphous silicon layer using a magnetron sputtering process.

[0107] In the sixth step, an n-type doped microcrystalline silicon layer and a p-type doped microcrystalline silicon layer are sequentially deposited on the n-type amorphous silicon layer using a PECVD apparatus to form a tunnel recombination layer (thickness: 8 nm).

[0108] In the seventh step, a hole transport layer (thickness 15 nm) made of spiro-TTB material is fabricated on the tunnel recombination layer using a vacuum evaporation process, and the evaporation rate is 0.2 Å / s.

[0109] In the eighth step, a perovskite component (Cs) with a concentration of 0.2 mol / L was deposited on the textured hole transport layer using a spin coating process. 0.05 FA 0.8 MA 0.15 PbBr 0.6 I 2.4 A DMF / DMSO (4:1) solution of the compound (II) was spin-coated at 500 rpm, and after extraction with anisole, the material was annealed at 70°C for 60 minutes to form a first perovskite layer (average thickness 100 nm).

[0110] In the ninth step, lead iodide and cesium bromide are formed on the first perovskite layer using a vacuum deposition process, where the rate of cesium bromide (CsBr) is 0.05 Å / s and the rate of lead iodide (PbI2) is 0.1 Å / s, with a total thickness of 50 nm.

[0111] A mixed solution of FAI and FABr was prepared, with a molar ratio of FAI to FABr of 3:1, and the solvent was ethanol or isopropyl alcohol. 70 μL of the mixed solution of FAI and FABr was spin-coated onto the lead iodide and cesium bromide layer, allowing the reaction to occur, forming a second perovskite layer (100 nm thick).

[0112] The second perovskite layer is annealed at a temperature of 100°C for 30 minutes to form a perovskite light-absorbing layer (average thickness 100 nm).

[0113] In the tenth step, a thin film layer of LiF (1 nm thick) and C were deposited on the perovskite light-absorbing layer using a vacuum deposition process. 60 A thin film layer (10 nm thick) is sequentially fabricated, which serves as an electron transport interface layer (11 nm thick).

[0114] In the 11th step, an electron transport layer (10 nm thick) made of SnO2 is fabricated using atomic layer deposition (ALD) process.

[0115] In the twelfth step, a second transparent conductive layer (100 nm thick) made of ITO material is formed on the electron transport layer using a magnetron sputtering process.

[0116] In a thirteenth step, a silver electrode is formed on the first transparent conductive layer and the second transparent conductive layer using a screen printing process.

[0117] Example 3 The method for manufacturing the perovskite-n-type silicon-based stacked solar cell provided in the embodiment of the present application is specifically as follows.

[0118] In the first step, a commercial-grade n-type silicon wafer with a resistivity of 3 Ω·cm, a thickness of 180 μm, and a texture dimension of 4 μm is prepared. The silicon wafer undergoes sequential texturing and cleaning processes to produce a textured n-type single-crystalline silicon substrate.

[0119] In the second step, an intrinsic amorphous silicon passivation layer (5 nm thick) is deposited on both sides of the n-type single-crystalline silicon substrate using a PECVD apparatus, forming a first passivation layer on the front side of the n-type single-crystalline silicon substrate and a second passivation layer on the back side of the n-type single-crystalline silicon substrate.

[0120] In the third step, phosphorus doping (doping concentration 10) was performed on the first passivation layer using a PECVD system. 20 cm -3 ) to form the front emitter.

[0121] In the fourth step, boron doping (doping concentration 10) was performed on the second passivation layer using a PECVD system. 19 cm -3 ) and a p-type amorphous silicon layer (thickness 10 nm) is deposited to form a back surface field structure.

[0122] In the fifth step, a first transparent conductive layer (100 nm thick) made of ITO material is fabricated on the p-type amorphous silicon layer using a magnetron sputtering process.

[0123] In the sixth step, an n-type doped microcrystalline silicon layer and a p-type doped microcrystalline silicon layer are sequentially deposited on the n-type amorphous silicon layer using a PECVD apparatus to form a tunnel recombination layer (thickness: 8 nm).

[0124] In the seventh step, a hole transport layer (thickness 15 nm) made of spiro-TTB material is fabricated on the tunnel recombination layer using a vacuum evaporation process, and the evaporation rate is 0.2 Å / s.

[0125] In the eighth step, a perovskite component (Cs) with a concentration of 3 mol / L was deposited on the textured hole transport layer using a spin coating process. 0.05 FA 0.8 MA 0.15 PbBr 0.6 I 2.4 A DMF / DMSO (4:1) solution of the compound (II) was spin-coated at 6000 rpm, and after extraction with anisole, the material was annealed at 190°C for 5 minutes to form a first perovskite layer (average thickness 300 nm).

[0126] In the ninth step, lead iodide and cesium bromide are formed on the first perovskite layer using a vacuum deposition process, where the rate of cesium bromide (CsBr) is 0.2 Å / s and the rate of lead iodide (PbI2) is 10 Å / s, with a total thickness of 1000 nm.

[0127] A mixed solution of FAI and FABr was prepared, with a molar ratio of FAI to FABr of 3:1, and the solvent was ethanol or isopropyl alcohol. 90 μL of the mixed solution of FAI and FABr was spin-coated onto the lead iodide and cesium bromide layer, allowing the reaction to occur, forming a second perovskite layer (3000 nm thick).

[0128] The second perovskite layer is annealed at 200°C for 5 minutes to form a perovskite light-absorbing layer (average thickness 3000 nm).

[0129] In the tenth step, a thin film layer of LiF (1 nm thick) and C were deposited on the perovskite light-absorbing layer using a vacuum deposition process. 60 A thin film layer (10 nm thick) is sequentially fabricated, which serves as an electron transport interface layer (11 nm thick).

[0130] In the 11th step, an electron transport layer (10 nm thick) made of SnO2 is fabricated using atomic layer deposition (ALD) process.

[0131] In the twelfth step, a second transparent conductive layer (100 nm thick) made of ITO material is formed on the electron transport layer using a magnetron sputtering process.

[0132] In a thirteenth step, a silver electrode is formed on the first transparent conductive layer and the second transparent conductive layer using a screen printing process.

[0133] Example 4 The method for manufacturing the perovskite-n-type silicon-based stacked solar cell provided in the embodiment of the present application is specifically as follows.

[0134] In the first step, a commercial-grade n-type silicon wafer with a resistivity of 3 Ω·cm, a thickness of 180 μm, and a texture dimension of 4 μm is prepared. The silicon wafer undergoes sequential texturing and cleaning processes to produce a textured n-type single-crystalline silicon substrate.

[0135] In the second step, an intrinsic amorphous silicon passivation layer (5 nm thick) is deposited on both sides of the n-type single-crystalline silicon substrate using a PECVD apparatus, forming a first passivation layer on the front side of the n-type single-crystalline silicon substrate and a second passivation layer on the back side of the n-type single-crystalline silicon substrate.

[0136] In the third step, phosphorus doping (doping concentration 10) was performed on the first passivation layer using a PECVD system. 20 cm -3 ) to form the front emitter.

[0137] In the fourth step, boron doping (doping concentration 10) was performed on the second passivation layer using a PECVD system. 19 cm -3 ) and a p-type amorphous silicon layer (thickness 10 nm) is deposited to form a back surface field structure.

[0138] In the fifth step, a first transparent conductive layer (100 nm thick) made of ITO material is fabricated on the p-type amorphous silicon layer using a magnetron sputtering process.

[0139] In the sixth step, an n-type doped microcrystalline silicon layer and a p-type doped microcrystalline silicon layer are sequentially deposited on the n-type amorphous silicon layer using a PECVD apparatus to form a tunnel recombination layer (thickness: 8 nm).

[0140] In the seventh step, a hole transport layer (thickness 15 nm) made of spiro-TTB material is fabricated on the tunnel recombination layer using a vacuum evaporation process, and the evaporation rate is 0.2 Å / s.

[0141] In the eighth step, lead iodide and cesium bromide are formed on the hole transport layer using a vacuum deposition process, where the rate of cesium bromide (CsBr) is 0.1 Å / s, the rate of lead iodide (PbI2) is 2 Å / s, and the total thickness is 400 nm.

[0142] In the ninth step, a perovskite component (Cs) was deposited on the textured hole transport layer using a spin coating process. 0.05 FA 0.8 MA 0.15 PbBr 0.6 I 2.4 ), and a DMF / DMSO (4:1) solution of FAI and FABr was spin-coated, where the concentrations of the perovskite components were 1.2 mol / L, the FAI concentration was 0.5 mol / L, and the FABr concentration was 0.1 mol / L. The spin-coating speed was 2000 rpm, and after extraction with anisole, the layer was annealed at 120°C for 20 min to form a perovskite light-absorbing layer (average thickness 550 nm).

[0143] In the tenth step, a thin film layer of LiF (1 nm thick) and C were deposited on the perovskite light-absorbing layer using a vacuum deposition process. 60 A thin film layer (10 nm thick) is sequentially fabricated, which serves as an electron transport interface layer (11 nm thick).

[0144] In the 11th step, an electron transport layer (10 nm thick) made of SnO2 is fabricated using atomic layer deposition (ALD) process.

[0145] In the twelfth step, a second transparent conductive layer (100 nm thick) made of ITO material is formed on the electron transport layer using a magnetron sputtering process.

[0146] In a thirteenth step, a silver electrode is formed on the first transparent conductive layer and the second transparent conductive layer using a screen printing process.

[0147] Example 5 The method for manufacturing the perovskite-n-type silicon-based stacked solar cell provided in the embodiment of the present application is specifically as follows.

[0148] In the first step, a commercial-grade n-type silicon wafer with a resistivity of 3 Ω·cm, a thickness of 180 μm, and a texture dimension of 4 μm is prepared. The silicon wafer undergoes sequential texturing and cleaning processes to produce a textured n-type single-crystalline silicon substrate.

[0149] In the second step, an intrinsic amorphous silicon passivation layer (5 nm thick) is deposited on both sides of the n-type single-crystalline silicon substrate using a PECVD apparatus, forming a first passivation layer on the front side of the n-type single-crystalline silicon substrate and a second passivation layer on the back side of the n-type single-crystalline silicon substrate.

[0150] In the third step, phosphorus doping (doping concentration 10) was performed on the first passivation layer using a PECVD system. 20 cm -3 ) to form the front emitter.

[0151] In the fourth step, boron doping (doping concentration 10) was performed on the second passivation layer using a PECVD system. 19 cm -3 ) and a p-type amorphous silicon layer (thickness 10 nm) is deposited to form a back surface field structure.

[0152] In the fifth step, a first transparent conductive layer (100 nm thick) made of ITO material is fabricated on the p-type amorphous silicon layer using a magnetron sputtering process.

[0153] In the sixth step, an n-type doped microcrystalline silicon layer and a p-type doped microcrystalline silicon layer are sequentially deposited on the n-type amorphous silicon layer using a PECVD apparatus to form a tunnel recombination layer (thickness: 8 nm).

[0154] In the seventh step, a hole transport layer (thickness 15 nm) made of spiro-TTB material is fabricated on the tunnel recombination layer using a vacuum evaporation process, and the evaporation rate is 0.2 Å / s.

[0155] In the eighth step, lead iodide and cesium bromide are formed on the hole transport layer using a vacuum deposition process, where the deposition rate of cesium bromide (CsBr) is 0.05 Å / s, the deposition rate of lead iodide (PbI2) is 0.1 Å / s, and the total thickness is 50 nm.

[0156] In the ninth step, a perovskite component (Cs) was deposited on the textured hole transport layer using a spin coating process. 0.05 FA 0.8 MA 0.15 PbBr 0.6 I 2.4 ), and a DMF / DMSO (4:1) solution of FAI and FABr was spin-coated, where the concentrations of the perovskite components were 0.1 mol / L, the FAI concentration was 0.1 mol / L, and the FABr concentration was 0.5 mol / L. The spin-coating speed was 500 rpm, and after extraction with anisole, the layer was annealed at 100°C for 30 min to form a perovskite light-absorbing layer (average thickness 100 nm).

[0157] In the tenth step, a thin film layer of LiF (1 nm thick) and C were deposited on the perovskite light-absorbing layer using a vacuum deposition process. 60 A thin film layer (10 nm thick) is sequentially fabricated, which serves as an electron transport interface layer (11 nm thick).

[0158] In the 11th step, an electron transport layer (10 nm thick) made of SnO2 is fabricated using atomic layer deposition (ALD) process.

[0159] In the twelfth step, a second transparent conductive layer (100 nm thick) made of ITO material is formed on the electron transport layer using a magnetron sputtering process.

[0160] In a thirteenth step, a silver electrode is formed on the first transparent conductive layer and the second transparent conductive layer using a screen printing process.

[0161] Example 6 The method for manufacturing the perovskite-n-type silicon-based stacked solar cell provided in the embodiment of the present application is specifically as follows.

[0162] In the first step, a commercial-grade n-type silicon wafer with a resistivity of 3 Ω·cm, a thickness of 180 μm, and a texture dimension of 4 μm is prepared. The silicon wafer undergoes sequential texturing and cleaning processes to produce a textured n-type single-crystalline silicon substrate.

[0163] In the second step, an intrinsic amorphous silicon passivation layer (5 nm thick) is deposited on both sides of the n-type single-crystalline silicon substrate using a PECVD apparatus, forming a first passivation layer on the front side of the n-type single-crystalline silicon substrate and a second passivation layer on the back side of the n-type single-crystalline silicon substrate.

[0164] In the third step, phosphorus doping (doping concentration 10) was performed on the first passivation layer using a PECVD system. 20 cm -3 ) to form the front emitter.

[0165] In the fourth step, boron doping (doping concentration 10) was performed on the second passivation layer using a PECVD system. 19 cm -3) and a p-type amorphous silicon layer (thickness 10 nm) is deposited to form a back surface field structure.

[0166] In the fifth step, a first transparent conductive layer (100 nm thick) made of ITO material is fabricated on the p-type amorphous silicon layer using a magnetron sputtering process.

[0167] In the sixth step, an n-type doped microcrystalline silicon layer and a p-type doped microcrystalline silicon layer are sequentially deposited on the n-type amorphous silicon layer using a PECVD apparatus to form a tunnel recombination layer (thickness: 8 nm).

[0168] In the seventh step, a hole transport layer (thickness 15 nm) made of spiro-TTB material is fabricated on the tunnel recombination layer using a vacuum evaporation process, and the evaporation rate is 0.2 Å / s.

[0169] In the eighth step, lead iodide and cesium bromide are formed on the hole transport layer using a vacuum deposition process, where the deposition rate of cesium bromide (CsBr) is 0.2 Å / s, the deposition rate of lead iodide (PbI2) is 10 Å / s, and the total thickness is 1000 nm.

[0170] In the ninth step, a perovskite component (Cs) was deposited on the textured hole transport layer using a spin coating process. 0.05 FA 0.8 MA 0.15 PbBr 0.6 I 2.4 ), and a DMF / DMSO (4:1) solution of FAI and FABr was spin-coated, where the concentrations of the perovskite components were 3 mol / L, the FAI concentration was 3 mol / L, and the FABr concentration was 3 mol / L. The spin-coating speed was 6000 rpm, and after extraction with anisole, the layer was annealed at 200°C for 5 min to form a perovskite light-absorbing layer (average thickness 3000 nm).

[0171] In the tenth step, a thin film layer of LiF (1 nm thick) and C were deposited on the perovskite light-absorbing layer using a vacuum deposition process. 60A thin film layer (10 nm thick) is sequentially fabricated, which serves as an electron transport interface layer (11 nm thick).

[0172] In the 11th step, an electron transport layer (10 nm thick) made of SnO2 is fabricated using atomic layer deposition (ALD) process.

[0173] In the twelfth step, a second transparent conductive layer (100 nm thick) made of ITO material is formed on the electron transport layer using a magnetron sputtering process.

[0174] In a thirteenth step, a silver electrode is formed on the first transparent conductive layer and the second transparent conductive layer using a screen printing process.

[0175] Example 7 The method for manufacturing the perovskite-n-type silicon-based stacked solar cell provided in the embodiment of the present application is specifically as follows.

[0176] In the first step, a commercial-grade n-type silicon wafer with a resistivity of 3 Ω·cm, a thickness of 180 μm, and a texture dimension of 4 μm is prepared. The silicon wafer undergoes sequential texturing and cleaning processes to produce a textured n-type single-crystalline silicon substrate.

[0177] In the second step, an intrinsic amorphous silicon passivation layer (5 nm thick) is deposited on both sides of the n-type single-crystalline silicon substrate using a PECVD apparatus, forming a first passivation layer on the front side of the n-type single-crystalline silicon substrate and a second passivation layer on the back side of the n-type single-crystalline silicon substrate.

[0178] In the third step, phosphorus doping (doping concentration 10) was performed on the first passivation layer using a PECVD system. 20 cm -3 ) to form the front emitter.

[0179] In the fourth step, boron doping (doping concentration 10) was performed on the second passivation layer using a PECVD system.19 cm -3 ) and a p-type amorphous silicon layer (thickness 10 nm) is deposited to form a back surface field structure.

[0180] In the fifth step, a first transparent conductive layer (100 nm thick) made of ITO material is fabricated on the p-type amorphous silicon layer using a magnetron sputtering process.

[0181] In the sixth step, an n-type doped microcrystalline silicon layer and a p-type doped microcrystalline silicon layer are sequentially deposited on the n-type amorphous silicon layer using a PECVD apparatus to form a tunnel recombination layer (thickness: 8 nm).

[0182] In the seventh step, a hole transport layer (thickness 15 nm) made of spiro-TTB material is fabricated on the tunnel recombination layer using a vacuum evaporation process, and the evaporation rate is 0.2 Å / s.

[0183] In the eighth step, lead iodide and cesium bromide are formed on the hole transport layer using a vacuum deposition process, where the deposition rate of cesium bromide (CsBr) is 0.05 Å / s, the deposition rate of lead iodide (PbI2) is 0.1 Å / s, and the total thickness is 50 nm.

[0184] A mixed solution of FAI and FABr was prepared, with a molar concentration ratio of FAI to FABr of 3:1, and the solvent was ethanol or isopropyl alcohol. 90 μL of the mixed solution of FAI and FABr was spin-coated onto the lead iodide and cesium bromide layer, and the resulting mixture was then annealed at 100°C for 30 minutes to form a first perovskite layer (average thickness 100 nm).

[0185] In the ninth step, a perovskite component (Cs) was deposited on the textured hole transport layer using a spin coating process. 0.05 FA 0.8 MA 0.15 PbBr 0.6 I 2.4The perovskite-based light-absorbing layer (average thickness: 100 nm) was formed by spin-coating a DMF / DMSO (4:1) solution of the perovskite component at a concentration of 0.1 mol / L at a spin-coating speed of 500 rpm, followed by extraction with anisole and annealing at 70°C for 60 min.

[0186] In the tenth step, a thin film layer of LiF (1 nm thick) and C were deposited on the perovskite light-absorbing layer using a vacuum deposition process. 60 A thin film layer (10 nm thick) is sequentially fabricated, which serves as an electron transport interface layer (11 nm thick).

[0187] In the 11th step, an electron transport layer (10 nm thick) made of SnO2 is fabricated using atomic layer deposition (ALD) process.

[0188] In the twelfth step, a second transparent conductive layer (100 nm thick) made of ITO material is formed on the electron transport layer using a magnetron sputtering process.

[0189] In a thirteenth step, a silver electrode is formed on the first transparent conductive layer and the second transparent conductive layer using a screen printing process.

[0190] Example 8 The method for manufacturing the perovskite-n-type silicon-based stacked solar cell provided in the embodiment of the present application is specifically as follows.

[0191] In the first step, a commercial-grade n-type silicon wafer with a resistivity of 3 Ω·cm, a thickness of 180 μm, and a texture dimension of 4 μm is prepared. The silicon wafer undergoes sequential texturing and cleaning processes to produce a textured n-type single-crystalline silicon substrate.

[0192] In the second step, an intrinsic amorphous silicon passivation layer (5 nm thick) is deposited on both sides of the n-type single-crystalline silicon substrate using a PECVD apparatus, forming a first passivation layer on the front side of the n-type single-crystalline silicon substrate and a second passivation layer on the back side of the n-type single-crystalline silicon substrate.

[0193] In the third step, phosphorus doping (doping concentration 10) was performed on the first passivation layer using a PECVD system. 20 cm -3 ) to form the front emitter.

[0194] In the fourth step, boron doping (doping concentration 10) was performed on the second passivation layer using a PECVD system. 19 cm -3 ) and a p-type amorphous silicon layer (thickness 10 nm) is deposited to form a back surface field structure.

[0195] In the fifth step, a first transparent conductive layer (100 nm thick) made of ITO material is fabricated on the p-type amorphous silicon layer using a magnetron sputtering process.

[0196] In the sixth step, an n-type doped microcrystalline silicon layer and a p-type doped microcrystalline silicon layer are sequentially deposited on the n-type amorphous silicon layer using a PECVD apparatus to form a tunnel recombination layer (thickness: 8 nm).

[0197] In the seventh step, a C layer was deposited on the tunnel recombination layer using a vacuum deposition process. 60 An electron transport layer (thickness 15 nm) of the material was fabricated, and the evaporation rate was 0.2 Å / s.

[0198] In the eighth step, lead iodide and cesium bromide are formed on the electron transport layer using a vacuum deposition process, where the rate of cesium bromide (CsBr) is 0.2 Å / s, the rate of lead iodide (PbI2) is 10 Å / s, and the total thickness is 1000 nm.

[0199] A mixed solution of FAI and FABr was prepared with a molar ratio of FAI to FABr of 3:1, using ethanol or isopropyl alcohol as the solvent. 90 μL of the mixed solution of FAI and FABr was spin-coated onto the lead iodide and cesium bromide layer to react, and then annealed at 200°C for 5 minutes to form a first perovskite layer (average thickness 300 nm).

[0200] In the ninth step, a perovskite component (Cs) was deposited on the textured electron transport layer using a spin coating process. 0.05 FA 0.8 MA 0.15 PbBr 0.6 I 2.4 The perovskite-based light-absorbing layer (average thickness 300 nm) was formed by spin-coating a DMF / DMSO (4:1) solution of the perovskite-based light-absorbing layer (average thickness 300 nm) at a spin-coating speed of 6000 rpm and anisole extraction treatment.

[0201] In the tenth step, a hole transport layer (thickness 10 nm) made of spiro-TTB is deposited on the perovskite light absorbing layer using a vacuum deposition process, and the evaporation rate is 0.1 Å / s.

[0202] In the 11th step, NiO was grown using atomic layer deposition (ALD) process. x Fabricate a buffer layer (thickness 10 nm) of the material.

[0203] In the twelfth step, a second transparent conductive layer (100 nm thick) made of ITO material is formed on the hole transport layer using a magnetron sputtering process.

[0204] In a thirteenth step, a silver electrode is formed on the first transparent conductive layer and the second transparent conductive layer using a screen printing process.

[0205] Example 9 The method for manufacturing the perovskite-n-type silicon-based stacked solar cell provided in the embodiment of the present application is specifically as follows.

[0206] In the first step, a commercial-grade n-type silicon wafer with a resistivity of 3 Ω·cm, a thickness of 180 μm, and a texture dimension of 4 μm is prepared. The silicon wafer undergoes sequential texturing and cleaning processes to produce a textured n-type single-crystalline silicon substrate.

[0207] In the second step, an intrinsic amorphous silicon passivation layer (5 nm thick) is deposited on both sides of the n-type single-crystalline silicon substrate using a PECVD apparatus, forming a first passivation layer on the front side of the n-type single-crystalline silicon substrate and a second passivation layer on the back side of the n-type single-crystalline silicon substrate.

[0208] In the third step, phosphorus doping (doping concentration 10) was performed on the first passivation layer using a PECVD system. 20 cm -3 ) to form the front emitter.

[0209] In the fourth step, boron doping (doping concentration 10) was performed on the second passivation layer using a PECVD system. 19 cm -3 ) and a p-type amorphous silicon layer (thickness 10 nm) is deposited to form a back surface field structure.

[0210] In the fifth step, a first transparent conductive layer (100 nm thick) made of ITO material is fabricated on the p-type amorphous silicon layer using a magnetron sputtering process.

[0211] In the sixth step, an n-type doped microcrystalline silicon layer and a p-type doped microcrystalline silicon layer are sequentially deposited on the n-type amorphous silicon layer using a PECVD apparatus to form a tunnel recombination layer (thickness: 8 nm).

[0212] In the seventh step, a C layer was deposited on the tunnel recombination layer using a vacuum deposition process. 60 An electron transport layer (thickness 15 nm) of the material was fabricated, and the evaporation rate was 0.2 Å / s.

[0213] In the eighth step, lead iodide and cesium bromide are formed on the electron transport layer using a vacuum deposition process, where the rate of cesium bromide (CsBr) is 0.1 Å / s, the rate of lead iodide (PbI2) is 5 Å / s, and the total thickness is 500 nm.

[0214] A mixed solution of FAI and FABr was prepared, with a molar ratio of FAI to FABr of 3:1, and the solvent was ethanol or isopropyl alcohol. 90 μL of the mixed solution of FAI and FABr was spin-coated onto the lead iodide and cesium bromide layer, and the first perovskite layer was then annealed at 150°C for 20 minutes to form a first perovskite layer (average thickness 200 nm).

[0215] In the ninth step, a perovskite component (Cs) was deposited on the textured electron transport layer using a spin coating process. 0.05 FA 0.8 MA 0.15 PbBr 0.6 I 2.4 The perovskite light-absorbing layer (average thickness 3000 nm) was formed by spin-coating a DMF / DMSO (4:1) solution of the perovskite component at a concentration of 1.5 mol / L at a spin-coating speed of 3000 rpm, followed by extraction with anisole and annealing at 130°C for 30 min.

[0216] In the tenth step, a hole transport layer (thickness 10 nm) made of spiro-TTB is deposited on the perovskite light absorbing layer using a vacuum deposition process, and the evaporation rate is 0.1 Å / s.

[0217] In the 11th step, NiO was grown using atomic layer deposition (ALD) process. x Fabricate a buffer layer (thickness 10 nm) of the material.

[0218] In the twelfth step, a second transparent conductive layer (100 nm thick) made of ITO material is formed on the hole transport layer using a magnetron sputtering process.

[0219] In a thirteenth step, a silver electrode is formed on the first transparent conductive layer and the second transparent conductive layer using a screen printing process.

[0220] Comparative Example 1 The method for manufacturing the perovskite-n-type silicon-based stacked solar cell provided in the embodiment of the present application is specifically as follows.

[0221] In the first step, a commercial-grade n-type silicon wafer with a resistivity of 3 Ω·cm, a thickness of 180 μm, and a texture dimension of 4 μm is prepared. The silicon wafer undergoes sequential texturing and cleaning processes to produce a textured n-type single-crystalline silicon substrate.

[0222] In the second step, an intrinsic amorphous silicon passivation layer (5 nm thick) is deposited on both sides of the n-type single-crystalline silicon substrate using a PECVD apparatus, forming a first passivation layer on the front side of the n-type single-crystalline silicon substrate and a second passivation layer on the back side of the n-type single-crystalline silicon substrate.

[0223] In the third step, phosphorus doping (doping concentration 10) was performed on the first passivation layer using a PECVD system. 20 cm -3 ) to form the front emitter.

[0224] In the fourth step, boron doping (doping concentration 10) was performed on the second passivation layer using a PECVD system. 19 cm -3 ) and a p-type amorphous silicon layer (thickness 10 nm) is deposited to form a back surface field structure.

[0225] In the fifth step, a first transparent conductive layer (100 nm thick) made of ITO material is fabricated on the p-type amorphous silicon layer using a magnetron sputtering process.

[0226] In the sixth step, an n-type doped microcrystalline silicon layer and a p-type doped microcrystalline silicon layer are sequentially deposited on the n-type amorphous silicon layer using a PECVD apparatus to form a tunnel recombination layer (thickness: 8 nm).

[0227] In the seventh step, a hole transport layer (thickness 15 nm) made of spiro-TTB material is fabricated on the tunnel recombination layer using a vacuum evaporation process, and the evaporation rate is 0.2 Å / s.

[0228] In the eighth step, lead iodide and cesium bromide are formed on the hole transport layer using a vacuum deposition process, where the rate of cesium bromide (CsBr) is 0.1 Å / s, the rate of lead iodide (PbI2) is 2 Å / s, and the total thickness is 400 nm.

[0229] A mixed solution of FAI and FABr was prepared with a molar ratio of FAI to FABr of 3:1, using ethanol or isopropyl alcohol as the solvent. 80 μL of the mixed solution of FAI and FABr was spin-coated onto the lead iodide and cesium bromide layers, allowing the reaction to occur, forming a perovskite thin film (550 nm thick).

[0230] The perovskite thin film is annealed at a temperature of 150° C. for 20 minutes to form a perovskite light-absorbing layer (average thickness 550 nm).

[0231] In the ninth step, a thin film layer of LiF (1 nm thick) and C were deposited on the perovskite light-absorbing layer using a vacuum deposition process. 60 A thin film layer (10 nm thick) is sequentially fabricated, which serves as an electron transport interface layer (11 nm thick).

[0232] In the tenth step, an electron transport layer (10 nm thick) made of SnO2 is fabricated using atomic layer deposition (ALD) process.

[0233] In step 11, a second transparent conductive layer (100 nm thick) made of ITO material is formed on the electron transport layer using a magnetron sputtering process.

[0234] In a twelfth step, a silver electrode is formed on the first transparent conductive layer and the second transparent conductive layer using a screen printing process.

[0235] Comparative Example 2 The method for manufacturing the perovskite-n-type silicon-based stacked solar cell provided in the embodiment of the present application is specifically as follows.

[0236] In the first step, a commercial-grade n-type silicon wafer with a resistivity of 3 Ω·cm, a thickness of 180 μm, and a texture dimension of 4 μm is prepared. The silicon wafer undergoes sequential texturing and cleaning processes to produce a textured n-type single-crystalline silicon substrate.

[0237] In the second step, an intrinsic amorphous silicon passivation layer (5 nm thick) is deposited on both sides of the n-type single-crystalline silicon substrate using a PECVD apparatus, forming a first passivation layer on the front side of the n-type single-crystalline silicon substrate and a second passivation layer on the back side of the n-type single-crystalline silicon substrate.

[0238] In the third step, phosphorus doping (doping concentration 10) was performed on the first passivation layer using a PECVD system. 20 cm -3 ) to form the front emitter.

[0239] In the fourth step, boron doping (doping concentration 10) was performed on the second passivation layer using a PECVD system. 19 cm -3 ) and a p-type amorphous silicon layer (thickness 10 nm) is deposited to form a back surface field structure.

[0240] In the fifth step, a first transparent conductive layer (100 nm thick) made of ITO material is fabricated on the p-type amorphous silicon layer using a magnetron sputtering process.

[0241] In the sixth step, an n-type doped microcrystalline silicon layer and a p-type doped microcrystalline silicon layer are sequentially deposited on the n-type amorphous silicon layer using a PECVD apparatus to form a tunnel recombination layer (thickness: 8 nm).

[0242] In the seventh step, a hole transport layer (thickness 15 nm) made of spiro-TTB material is fabricated on the tunnel recombination layer using a vacuum evaporation process, and the evaporation rate is 0.2 Å / s.

[0243] In the eighth step, a perovskite component (Cs) with a concentration of 2.1 mol / L was deposited on the textured hole transport layer using a spin coating process. 0.05 FA 0.8 MA 0.15 PbBr 0.6 I 2.4 A DMF / DMSO (4:1) solution of the compound (II) was spin-coated at 2000 rpm, and after extraction with anisole, the resulting solution was annealed at 100°C for 20 minutes to form a perovskite light-absorbing layer (average thickness 2500 nm).

[0244] In the ninth step, a thin film layer of LiF (1 nm thick) and C were deposited on the perovskite light-absorbing layer using a vacuum deposition process. 60 A thin film layer (10 nm thick) is sequentially fabricated, which serves as an electron transport interface layer (11 nm thick).

[0245] In the tenth step, an electron transport layer (10 nm thick) made of SnO2 is fabricated using atomic layer deposition (ALD) process.

[0246] In step 11, a second transparent conductive layer (100 nm thick) made of ITO material is formed on the electron transport layer using a magnetron sputtering process.

[0247] In a twelfth step, a silver electrode is formed on the first transparent conductive layer and the second transparent conductive layer using a screen printing process.

[0248] Comparative Example 3 The method for manufacturing the perovskite-n-type silicon-based stacked solar cell provided in the embodiment of the present application is specifically as follows.

[0249] In the first step, a commercial-grade n-type silicon wafer with a resistivity of 3 Ω·cm, a thickness of 180 μm, and a texture dimension of 4 μm is prepared. The silicon wafer undergoes sequential texturing and cleaning processes to produce a textured n-type single-crystalline silicon substrate.

[0250] In the second step, an intrinsic amorphous silicon passivation layer (5 nm thick) is deposited on both sides of the n-type single-crystalline silicon substrate using a PECVD apparatus, forming a first passivation layer on the front side of the n-type single-crystalline silicon substrate and a second passivation layer on the back side of the n-type single-crystalline silicon substrate.

[0251] In the third step, phosphorus doping (doping concentration 10) was performed on the first passivation layer using a PECVD system. 20 cm -3 ) to form the front emitter.

[0252] In the fourth step, boron doping (doping concentration 10) was performed on the second passivation layer using a PECVD system. 19 cm -3 ) and a p-type amorphous silicon layer (thickness 10 nm) is deposited to form a back surface field structure.

[0253] In the fifth step, a first transparent conductive layer (100 nm thick) made of ITO material is fabricated on the p-type amorphous silicon layer using a magnetron sputtering process.

[0254] In the sixth step, an n-type doped microcrystalline silicon layer and a p-type doped microcrystalline silicon layer are sequentially deposited on the n-type amorphous silicon layer using a PECVD apparatus to form a tunnel recombination layer (thickness: 8 nm).

[0255] In the seventh step, a C layer was deposited on the tunnel recombination layer using a vacuum deposition process.60 An electron transport layer (thickness 15 nm) of the material was fabricated, and the evaporation rate was 0.2 Å / s.

[0256] In the eighth step, lead iodide and cesium bromide are formed on the electron transport layer using a vacuum deposition process, where the rate of cesium bromide (CsBr) is 0.1 Å / s, the rate of lead iodide (PbI2) is 2 Å / s, and the total thickness is 400 nm.

[0257] A mixed solution of FAI and FABr was prepared with a molar ratio of FAI to FABr of 3:1, using ethanol or isopropyl alcohol as the solvent. 80 μL of the mixed solution of FAI and FABr was spin-coated onto the lead iodide and cesium bromide layers, allowing the reaction to occur, forming a perovskite thin film (550 nm thick).

[0258] The second perovskite layer is annealed at a temperature of 150°C for 20 minutes to form a perovskite light-absorbing layer (average thickness 550 nm).

[0259] In the ninth step, a hole transport layer (thickness 10 nm) made of spiro-TTB is fabricated on the perovskite light absorbing layer using a vacuum deposition process.

[0260] In the tenth step, NiO was deposited on the hole transport layer using atomic layer deposition (ALD). x Fabricate a buffer layer (thickness 10 nm) of the material.

[0261] In step 11, a second transparent conductive layer (100 nm thick) made of ITO material is formed on the hole transport layer using a magnetron sputtering process.

[0262] In a twelfth step, a silver electrode is formed on the first transparent conductive layer and the second transparent conductive layer using a screen printing process.

[0263] In order to verify the performance of the stacked solar cells, the performance parameters such as photoelectric conversion efficiency, fill factor, open circuit voltage, and short circuit current of the devices manufactured in Example 1, Example 4, Example 8, Comparative Example 1, Comparative Example 2, and Comparative Example 3 under the same effective area were tested, and the comparison of the performance parameters is shown in Table 1.

[0264] [Table 1]

[0265] As can be seen from Table 1, the perovskite-silicon based stacked solar cell provided in the examples of the present application exhibited improved open-circuit voltage and short-circuit current, as well as improved conversion efficiency, compared to a typical stacked solar cell fabricated solely by a solution process or vacuum deposition method. As can be seen from the above, the perovskite-silicon based stacked solar cell fabricated by the fabrication method provided in the examples of the present application was able to achieve both a high open-circuit voltage and a high short-circuit current, and also improved photoelectric conversion efficiency.

[0266] In the above description of the embodiments, the particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.

[0267] The above are merely specific embodiments of the present application, and the scope of protection of the present application is not limited thereto. Any changes or replacements that can be easily thought of by a person skilled in the art within the technical scope described in the present application are included in the scope of protection of the present application. Therefore, the scope of protection of the present application shall be equivalent to the scope of protection of the claims.

[0268] The above-described device embodiments are merely illustrative, and the units described herein as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, i.e., they may be located in one place or distributed across multiple network units. According to actual needs, some or all of the modules may be selected to achieve the objectives of the solutions of the present embodiment. Those skilled in the art can understand and implement the present invention without any creative effort.

[0269] The terms "one embodiment," "embodiment," or "one or more embodiments" used herein mean that a particular feature, structure, or characteristic described by the embodiment is included in at least one embodiment of the present application. Note also that various references to "in one embodiment" in this specification do not necessarily refer to the same embodiment.

[0270] In the specification provided herein, numerous specific details have been set forth. However, it will be understood that embodiments of the present application may be practiced without these specific details. In some instances, well-known methods, structures and techniques have not been shown in detail in order not to obscure the understanding of this specification.

[0271] Finally, it should be noted that the above examples are only for illustrating the technical solutions of the present application, and are not intended to limit the same. Although the present application has been described in detail with reference to the above examples, it is naturally understood by those skilled in the art that modifications to the technical solutions described in the above examples or equivalent substitutions for some technical features thereof are possible, and such modifications or substitutions do not deviate the essence of the relevant technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application. [Explanation of symbols]

[0272] 101 n-type crystalline silicon wafer 102 First passivation layer 103 Second passivation layer 104 n-type amorphous / microcrystalline silicon layer 105 p-type amorphous / microcrystalline silicon layer 106 First transparent conductive layer 107 Charge recombination layer 1070 n-type doped microcrystalline silicon layer 1071 p-type doped microcrystalline silicon layer 108 First carrier transport layer 109 Perovskite light absorbing layer 110 Second carrier transport interface layer 1100 Second carrier transport interface layer 1101 Second carrier transport interface layer II 111 Second carrier transport layer 112 Second transparent conductive layer 113 Electrode 1090 First perovskite layer 1091 Second perovskite layer

Claims

1. providing a substrate including a silicon-based bottom cell having a textured structure, a charge recombination layer, and a first carrier transport layer, which are stacked in sequence; forming a perovskite light-absorbing layer consisting of two perovskite layers, a first perovskite layer and a second perovskite layer, on the first carrier transport layer having a textured structure, wherein the first perovskite layer is manufactured by a solution process and the second perovskite layer is manufactured by a perovskite framework vacuum deposition process; The step of forming a perovskite light-absorbing layer composed of two perovskite layers, a first perovskite layer and a second perovskite layer, on the first carrier transport layer having a textured structure includes: the method includes depositing a perovskite framework on the first carrier transport layer having a textured structure by a vacuum deposition method, and then fabricating a first perovskite layer by a solution method, wherein the solution used in the solution method contains an excess of an organic amine, and during the process of forming the first perovskite layer, a material in the perovskite framework reacts with the organic amine to form a second perovskite layer; The perovskite framework vacuum deposition method includes first forming a perovskite framework by vacuum deposition, and then reacting the perovskite framework with an organic amine to form a second perovskite layer; The method for producing a perovskite-silicon-based stacked solar cell includes: the perovskite framework is a mixture formed of two or more of PbX2 and CsY; X and Y are each one or more selected from Cl-, Br-, I-, and SCN-; and the organic amine is one or more of formamidine hydroiodide, methylammonium bromide, and formamidine hydrobromide.

2. 2. The method for producing a perovskite-silicon based stacked solar cell according to claim 1, wherein the average thickness of the first perovskite layer produced by a solution process is in the range of greater than 0 and less than or equal to ½L, where L is the average vertical distance from the bottom to the top of the textured structure of the first carrier transport layer.

3. The step of forming a perovskite light-absorbing layer composed of two perovskite layers, a first perovskite layer and a second perovskite layer, on the first carrier transport layer having a textured structure includes:

2. The method for producing a perovskite-silicon based stacked solar cell according to claim 1, comprising the steps of producing a second perovskite layer on the first carrier transport layer having a textured structure by a perovskite framework vacuum deposition method, and then producing a first perovskite layer by a solution process.

4. 4. The method for producing a perovskite-silicon based stacked solar cell according to claim 1, wherein the solute of the solution used in the solution process is a mixed perovskite component CsxFAyMAzPbBrmIn (x+y+z=1, m+n=3) containing Cs, FA or MA, and the solvent includes one or more of N,N-dimethylformamide and dimethylsulfoxide.

5. The method for producing a perovskite-silicon-based stacked solar cell according to claim 4, wherein the concentration of the solution used in the solution method is 0.2 mol / L to 3 mol / L.

6. 4. The method for producing a perovskite-silicon based stacked solar cell according to claim 1, wherein the perovskite framework vacuum deposition method comprises spin-coating an organic amine solution onto the perovskite framework, the spin-coating rotation speed being 500 rpm to 6000 rpm, and the thickness of the perovskite framework being in the range of 50 nm to 1000 nm.

7. 4. The method for producing a perovskite-silicon based stacked solar cell according to claim 1, further comprising the step of sequentially forming a second carrier transport layer, a transparent conductive layer and an electrode on the perovskite light absorbing layer after forming the perovskite light absorbing layer.

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