Laser irradiation device, information processing method, program, and learning model generation method

Abstract

To provide a laser irradiation device and the like capable of efficiently determining the state of the laser irradiation device on the basis of a beam profile of laser light.SOLUTION: A laser irradiation device includes a laser light source that emits laser light, and a control unit that controls the irradiation of the substrate with laser light, and the control unit acquires a beam profile of the laser light emitted from the laser light source, determines whether the state of the laser irradiation device is abnormal by inputting the acquired beam profile to a learning model that outputs the state indicating whether the laser irradiation device is abnormal when the beam profile is input, and outputs a notification signal when it is determined that the state of the laser irradiation device is abnormal.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a laser irradiation device, an information processing method, a program, and a method for generating a learning model. [Background technology]

[0002] A laser annealing device for forming a polycrystalline silicon thin film is known (for example, Patent Document 1). The laser annealing device described in Patent Document 1 includes a waveform shaping device that shapes the waveform of a laser light pulse, and the laser light shaped into a line by the waveform shaping device is irradiated onto an amorphous silicon film, thereby forming a polycrystalline silicon thin film. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2012-15545 Summary of the Invention [Problem to be solved by the invention]

[0004] However, the laser annealing apparatus of Patent Document 1 does not take into consideration the point of determining the state of the laser annealing apparatus based on the beam profile of the laser light.

[0005] The present invention has been made in view of the above circumstances, and aims to provide a laser irradiation device or the like that can efficiently determine the state of the laser irradiation device based on the beam profile of the laser light. [Means for solving the problem]

[0006] The laser irradiation device according to this aspect is a laser irradiation device comprising a laser light source that emits laser light and a control unit that controls the irradiation of the laser light onto a substrate, wherein the control unit acquires a beam profile of the laser light emitted from the laser light source, and determines whether the state of the laser irradiation device is abnormal by inputting the acquired beam profile into a learning model that outputs a state indicating whether the laser irradiation device is abnormal when a beam profile is input, and outputs an alarm signal if it is determined that the state of the laser irradiation device is abnormal.

[0007] The information processing method or program according to this aspect causes a computer to acquire a beam profile of laser light emitted from a laser light source, determine whether or not the state of a laser irradiation device equipped with the laser light source is abnormal based on the acquired beam profile, and, if it is determined that the state of the laser irradiation device is abnormal, execute a process of outputting an alarm signal.

[0008] The method for generating a learning model according to this aspect involves acquiring a beam profile of laser light emitted from a laser light source provided in a laser irradiation device from a detection unit provided in the laser irradiation device, acquiring status information for the laser irradiation device, and using training data including question data consisting of the acquired beam profile and answer data consisting of the acquired status information, generating a learning model that outputs status information for the laser irradiation device when a beam profile is input. [Effects of the Invention]

[0009] According to the present invention, it is possible to provide a laser irradiation device or the like that efficiently determines the state of the laser irradiation device based on the beam profile of the laser light. [Brief explanation of the drawings]

[0010] [Figure 1] 1 is a diagram showing an example of the configuration of a laser annealing apparatus according to a first embodiment. [Figure 2]FIG. 2 is a diagram illustrating an example of the configuration of a control device included in the laser annealing apparatus. [Figure 3] FIG. 10 is an explanatory diagram illustrating an example of a learning model. [Figure 4] 10 is a flowchart showing an example of a processing procedure of a control unit (when learning a learning model). [Figure 5] 10 is a flowchart showing an example of a processing procedure of the control unit (when a learning model is in operation). [Figure 6] FIG. 10 is a diagram illustrating an example of a management screen of the laser annealing apparatus. [Figure 7] 10A to 10C are cross-sectional views showing steps in a method for manufacturing a semiconductor device according to another embodiment (a method for manufacturing a semiconductor device). [Figure 8] 10A to 10C are cross-sectional views showing steps in a method for manufacturing a semiconductor device according to another embodiment (a method for manufacturing a semiconductor device). [Figure 9] 10A to 10C are cross-sectional views showing steps in a method for manufacturing a semiconductor device according to another embodiment (a method for manufacturing a semiconductor device). [Figure 10] 10A to 10C are cross-sectional views showing steps in a method for manufacturing a semiconductor device according to another embodiment (a method for manufacturing a semiconductor device). [Figure 11] 10A to 10C are cross-sectional views showing steps in a method for manufacturing a semiconductor device according to another embodiment (a method for manufacturing a semiconductor device).

[0011] (Embodiment 1) Hereinafter, an embodiment of the present invention will be described. Fig. 1 is a diagram showing an example of the configuration of a laser annealing apparatus 1. Fig. 2 is a diagram showing an example of the configuration of a control device 9 included in the laser annealing apparatus 1. The laser annealing apparatus 1 (laser irradiation apparatus) is, for example, an excimer laser annealing (ELA) apparatus that forms a low temperature polysilicon (LTPS) film.

[0012] The laser annealing apparatus 1 irradiates laser light onto a silicon film formed on a substrate 8. This converts the amorphous silicon film (a-Si film) into a polycrystalline silicon film (polysilicon film: p-Si film). The substrate 8 is, for example, a semiconductor substrate such as a glass substrate.

[0013] As shown in the drawings in this embodiment, in an XYZ three-dimensional Cartesian coordinate system, the Z direction is the vertical direction, which is the direction perpendicular to the substrate 8. The XY plane is a plane parallel to the surface of the substrate 8 on which the silicon film is formed. For example, the X direction is the longitudinal direction of the rectangular substrate 8, and the Y direction is the lateral direction of the substrate 8. When a θ-axis stage 71 that can rotate from 0° to 90° around the Z axis is used, the X direction can be the lateral direction of the substrate 8, and the Y direction can be the longitudinal direction of the substrate 8.

[0014] The laser annealing apparatus 1 includes an annealing optical system 11, a laser irradiation chamber 7, and a control device 9. The laser irradiation chamber 7 houses a base 72 and a stage 71 arranged on the base 72. In the laser annealing apparatus 1, the silicon film 201 is irradiated with laser light while the substrate 8 is transported in the +X direction by the stage 71. Furthermore, the apparatus includes a biplanar phototube 62, an OED sensor 63, an unevenness monitor 64, and a profiler camera 66 as detection units that detect information related to the emitted laser light.

[0015] The annealing optical system 11 is an optical system that generates laser light for crystallizing the amorphous silicon film formed on the substrate 8 and converting it into a polysilicon film, and irradiates the amorphous silicon film with the laser light. The annealing optical system 11 includes a laser light source 2, an attenuator 3, a polarization ratio control unit 4, a beam shaping optical system 5, an epi-mirror 61, and a projection lens 65, and emits a line-shaped laser light.

[0016] The laser light source 2 is a laser generating device that generates pulsed laser light as laser light to be irradiated onto the amorphous silicon film (object to be processed). The generated laser light is laser light for crystallizing the amorphous film on the substrate 8 to form a crystallized film, and is, for example, gas laser light such as excimer laser light with a center wavelength of 308 nm. Alternatively, the gas laser light is not limited to excimer laser light, and may be other gas lasers such as a CO2 laser.

[0017] The laser light source 2 has a chamber filled with gas such as xenon, and two resonator mirrors arranged facing each other with the gas in between. One resonator mirror is a total reflection mirror that reflects all light, and the other is a partial reflection mirror that transmits a portion of the light. Gas light excited by the gas is repeatedly reflected between the resonator mirrors, and the amplified light is emitted from the resonator mirror as laser light. The laser light source 2 repeatedly emits pulsed laser light at a frequency of, for example, 500 Hz to 600 Hz. The laser light source 2 emits the laser light toward the attenuator 3.

[0018] The attenuator 3 attenuates the incident laser light to adjust it to a predetermined energy density. These attenuators have a transmittance characteristic that indicates the ratio of the emitted laser light to the incident laser light, and the transmittance is configured to be variable based on a signal from the control device 9. The attenuator 3 is provided in the optical path from the laser light source 2 to the beam shaping optical system 5. The attenuator 3 attenuates the laser light emitted by the laser light source 2 in accordance with the transmittance.

[0019] The energy density (E) emitted from the attenuator 3 is equal to the energy density (E0) of the laser light emitted from the laser light source 2 multiplied by the transmittance (T) of the attenuator 3 (E=E0×T). The control device 9 identifies (derives) and changes the transmittance of the attenuator 3 so that the energy density emitted from the attenuator 3 becomes the optimal energy density.

[0020] The polarization ratio control unit 4 is disposed on the output side of the attenuator 3. The polarization ratio control unit 4 is configured with, for example, a half-wave plate (λ / 2 plate) and a polarizing beam splitter, and changes the polarization ratio between P polarization and S polarization of the incident laser light. In other words, the polarization ratio of the laser light output from the attenuator 3 is changed by the polarization ratio control unit 4. The polarization ratio control unit 4 is configured to change (variably change) the polarization ratio based on a control signal output from the control device 9.

[0021] When the transmittance of the attenuator 3 is changed, the polarization ratio of the laser light emitted from the attenuator 3 is changed according to the change in transmittance. In response to this, the control device 9 changes the polarization ratio of the polarization ratio control unit 4 according to the changed transmittance, thereby controlling the polarization ratio of the laser light emitted from the polarization ratio control unit 4 to be constant.

[0022] When changing the polarization ratio of the polarization ratio control unit 4, the control device 9 may refer to information stored in a storage unit 92 of the control device 9 in table format (polarization ratio table), for example, and specify (derive) the polarization ratio according to the transmittance. The polarization ratio table defines the polarization ratios corresponding to each transmittance.

[0023] The laser light emitted from the polarization ratio control unit 4 is incident on the beam shaping optical system 5, which shapes the incident laser light to generate laser light with a beam shape suitable for irradiating a silicon film. The beam shaping optical system 5 generates a line beam that is linear along the Y direction.

[0024] The beam shaping optical system 5 splits one beam into multiple beams (multiple line beams aligned in the Z direction) using, for example, a homogenizer made up of a lens array. After splitting into multiple beams, the multiple beams can be combined using a condenser lens to form a line beam. The beam shaping optical system 5 emits the generated (shaped) linear laser light to the epi-illumination mirror 61.

[0025] The epi-mirror 61 is a rectangular reflecting mirror extending in the Y direction and reflects the laser light, which is a plurality of line beams generated by the beam shaping optical system 5. The epi-mirror 61 is, for example, a dichroic mirror, which is a partial reflecting mirror that transmits a portion of the light. The epi-mirror 61 reflects the line-shaped laser light to generate reflected light and transmits a portion of the line-shaped laser light to generate transmitted light. The epi-mirror 61 irradiates the reflected laser light onto the silicon film of the substrate 8 and emits the transmitted laser light to a pulse measuring device, for example, a biplanar phototube.

[0026] The projection lens 65 is disposed above the substrate 8. The projection lens 65 has a plurality of lenses for projecting the laser light onto the substrate 8, i.e., the silicon film. The projection lens 65 focuses the laser light onto the substrate 8. On the substrate 8, the laser light forms a linear irradiation area along the Y direction. That is, on the substrate 8, the laser light is a line beam with the Y direction as the longitudinal direction. Furthermore, while the substrate 8 is being transported in the +X direction, the laser light is irradiated onto the silicon film. This allows the laser light to be irradiated onto a band-shaped area whose width is the length of the irradiation area in the Y direction.

[0027] The line beam-like laser light irradiated onto the epi-illumination mirror 61 has a beam shape with a widened minor axis width, that is, the minor axis width is somewhat widened and the shape is distorted after being emitted from the condenser lens. The laser light reflected by the epi-illumination mirror 61 passes through the projection lens 65 and is shaped into a line beam-like laser light with a minor axis width of about 1 / 5.

[0028] The biplanar phototube 62 is provided at the end of the annealing optical system 11, adjacent to the beam shaping optical system 5, and detects the pulse waveform of the laser light emitted from the laser light source 2 based on the transmitted light that has passed through the epi-illumination mirror 61. The biplanar phototube 62 outputs (transmits) the detected pulse waveform to the control device 9. Based on this pulse waveform, the laser pulse energy of the laser light is derived.

[0029] The OED sensor 63 includes an optical sensor, and detects reflected light (light reflected by the substrate 8) of light emitted from a light source (another light source) separate from the laser light source 2, to obtain information about the crystal surface on the substrate 8. The OED sensor 63 outputs (transmits as a signal) the brightness (detection value) of the detected reflected light to the control device 9.

[0030] The unevenness monitor 64 includes a line camera, and captures an image of the area of ​​interest on the substrate 8 irradiated with laser light using the line camera, detects the average brightness of the area of ​​interest contained in the captured image, and acquires information about the scattered light of the surface shape of the substrate 8. The unevenness monitor 64 outputs (transmits as a signal) the detected average brightness (detection value) of the substrate 8 (area of ​​interest) to the control device 9. The unevenness monitor 64 may also output the image captured by the line camera (image of the area of ​​interest on the substrate 8) to the control device 9.

[0031] The profiler camera 66 is a sensor (line beam sensor) that detects information about the shape of the laser light shaped into a line beam by the projection lens 65, and is, for example, a beam profiler. The profiler camera 66 is provided, for example, on the side of the stage 71 and is aligned so that the top surface of the profiler camera 66 is at the same height as the substrate 8 placed on the stage 71. The laser light shaped into a line beam by the annealing optical system 11 is irradiated onto the top surface of the profiler camera 66. The profiler camera 66 includes an imaging unit, for example, a CMOS camera, and captures the laser light shaped into a line beam with the imaging unit to obtain information (data) about the shape of the laser light, such as an image (captured image). The profiler camera 66 may detect, as information about the shape of the laser light shaped into a line beam, information about the axial widths of the minor and major axes of the rectangular line beam, distortion or depression of the axis, tilt when the line beam is viewed stereoscopically, and angle or curvature between adjacent surfaces. The profiler camera 66 may also detect information about the shape of the raw beam before it is shaped into a line beam. In addition to the profiler camera 66 of this embodiment, a line beam sensor that acquires information about the shape of the laser beam may be provided, for example, near the biplanar phototube 62, with its Y-axis direction different from that of the biplanar phototube 62.

[0032] The beam profile is configured from data of detected values ​​(images, etc.) output from the profiler camera 66. That is, the beam profile includes data of detected values ​​(images, etc.) output from the profiler camera 66. The beam profile may further include a pulse waveform detected by the biplanar photoelectric tube 62. The pulse waveform may be configured from numerical data or image data indicating the waveform. As described above, in this embodiment, the beam profile may include information about the shape of the line beam-shaped laser light detected by the profiler camera 66 and information about the pulse waveform detected by the biplanar photoelectric tube 62, and may be information that combines these pieces of information depending on the time at which they were detected.

[0033] The control device 9 is an information processing device such as a personal computer or a server device that performs overall or integrated control or management of the laser annealing apparatus 1. The control device 9 includes a control unit 91, a storage unit 92, a communication unit 93, and an input / output I / F 94, and is communicatively connected to control devices (other control devices) that control the laser light source 2 or each optical system in the annealing optical system 11 via the communication unit 93 or the input / output I / F 94. The control device 9 is communicatively connected to various measuring devices, such as a pulse measuring instrument and a photodetector, included in the laser annealing apparatus 1, and performs various controls on the laser light source 2 or the annealing optical system 11 based on measurement data output from these various measuring devices.

[0034] The control unit 91 has one or more central processing units (CPUs), micro-processing units (MPUs), graphics processing units (GPUs), or other processing devices with timing functions, and performs various information processing and control processing for each optical system included in the laser light source 2 or the annealing optical system 11 by reading and executing a program P (program product) stored in the memory unit 92.

[0035] The memory unit 92 includes a volatile memory area such as a static random access memory (SRAM), a dynamic random access memory (DRAM), or a flash memory, and a non-volatile memory area such as an EEPROM or a hard disk. The memory unit 92 pre-stores a program P (program product) and data referenced during processing. The program P stored in the memory unit 92 may be a program P (program product) read from a recording medium 920 readable by the control unit 91. Alternatively, the program P (program product) may be downloaded from an external computer (not shown) connected to a communication network (not shown) and stored in the memory unit 92. The memory unit 92 stores an actual file of a learning model 921 (described later). The actual file of the learning model 921 may be configured as a module included in the program P (program product).

[0036] The communication unit 93 is, for example, a communication module or communication interface conforming to the Ethernet (registered trademark) standard, and an Ethernet cable is connected to the communication unit 93. The communication unit 93 is not limited to being a wired communication module such as an Ethernet cable, but may be a communication interface compatible with wireless communication such as a short-range wireless communication module such as Wi-Fi (registered trademark) or Bluetooth (registered trademark), or a wide-area wireless communication module such as 4G or 5G. The control device 9 may communicate with an external server such as a cloud server connected to an external network such as the Internet via the communication unit 93.

[0037] The input / output I / F 94 is a communication interface that complies with a communication standard such as RS232C or USB. An input device such as a keyboard or a display device 941 such as a liquid crystal display is connected to the input / output I / F 94. The control device 9 may acquire various detection values ​​from detection units such as the biplanar phototube 62, the OED sensor 63, the unevenness monitor 64, or the profiler camera 66 via the input / output I / F 94.

[0038] 3 is an explanatory diagram showing an example of the learning model 921. The control unit 91 of the control device 9 uses training data to train a neural network, and when a beam profile of the laser annealing apparatus 1 is input, generates the learning model 921 that outputs information (state information) relating to the state of the laser annealing apparatus 1.

[0039] The beam profile includes information about the shape of the laser light, such as an image from the profiler camera 66 provided in the laser annealing apparatus 1. The beam profile may further include information about the pulse waveform. The beam profile is periodically acquired multiple times during a predetermined period before the preparation step (condition setting), for example. The information (detected values) is detected at a predetermined cycle, and the beam profile may include the standard deviation or average value of the multiple detected values ​​detected at the predetermined cycle.

[0040] When a beam profile including information about the shape of the laser beam is input to the learning model 921 in this manner, the control unit 91 of the control device 9 may analyze features extracted in the intermediate layer of the learning model 921 to determine which information (data) has a high influence (contribution rate) on the output value of the learning model 921. The feature analysis may use, for example, principal component analysis, or a feature importance evaluation method such as attention mechanism, SHAP, or permutation importance. The control unit 91 of the control device 9 may also display data with a high influence (contribution rate) among various data (elements) constituting the beam profile when displaying status information of the laser annealing apparatus 1, which will be described later.

[0041] Information (status information) regarding the status of the laser annealing apparatus 1 is, for example, information indicating whether the status of the laser annealing apparatus 1 is normal or abnormal. The status information of the laser annealing apparatus 1 may be, for example, information based on the evaluation results of the beam profile by an administrator of the laser annealing apparatus 1. Furthermore, when the beam profile includes information regarding the shape of the laser light and information regarding the pulse waveform, status information of the laser annealing apparatus 1 as a whole can be derived based on the interrelationship between these individual pieces of information (data). The status information (normal or abnormal) of the laser annealing apparatus 1 may also include status information (normal or abnormal) of the beam profile itself.

[0042] The training data is composed of problem data consisting of a beam profile including detection values ​​from a detection unit such as the profiler camera 66, and answer data consisting of status information indicating whether the status of the laser annealing apparatus 1 is normal or abnormal, and these problem data and answer data are associated and stored in the memory unit 92 of the control device 9. For example, answer data indicating an abnormality is associated with problem data in which a distortion or depression exists in the axis line of the short axis or long axis of the line beam. Also, answer data indicating an abnormality is associated with problem data in which the curvature between adjacent surfaces is large when the line beam is viewed stereoscopically (large R, droopy shape). The original data that forms the problem data and answer data of the training data can be generated, for example, by aggregating beam profiles included in the operation performance data of multiple laser annealing apparatuses 1 and evaluation results of the beam profiles by an administrator or the like.

[0043] The neural network (learning model 921) trained using training data is expected to be used as a program module that is part of artificial intelligence software. The learning model 921 is used in the control device 9, and when executed by the control device 9 having such a processing capability, a neural network system is configured.

[0044] The learning model 921 is configured, for example, by a DNN (Deep Neural Network), and has an input layer that accepts input of a beam profile including detection values, etc., an intermediate layer that extracts features of the beam profile, and an output layer that outputs status information (normal or abnormal) of the laser annealing apparatus 1.

[0045] The input layer has multiple neurons that receive input of a beam profile including detection values, etc., and passes the input values ​​to the middle layer. The middle layer is defined using an activation function such as a ReLu function or a sigmoid function, and has multiple neurons that extract features of each input value, and passes the extracted features to the output layer. Parameters such as weighting coefficients and bias values ​​of the activation function are optimized using the backpropagation method. The output layer is composed of, for example, a fully connected layer, and outputs status information (normal or abnormal) of the laser annealing device 1 based on the features output from the middle layer.

[0046] In this embodiment, the learning model 921 is a DNN, but is not limited to this, and may be a learning model 921 constructed using other learning algorithms, such as neural networks other than DNN, a transformer, a recurrent neural network (RNN), a long-short term model (LSTM), a CNN, a support vector machine (SVM), a Bayesian network, linear regression, a regression tree, multiple regression, a random forest, an ensemble, etc.

[0047] In the present embodiment, a beam profile configured with information about the shape of a laser beam shaped into a line beam is input to the learning model 921, but this is not limiting. The learning model 921 may be generated (learned) using training data in which a beam profile configured by a combination of information about the shape of the laser beam and information about the pulse waveform is used as response data. Alternatively, the learning model 921 may be configured with multiple learning models 921 corresponding to individual pieces of information (data) about the shape of the laser beam and information about the pulse waveform. In this case, for example, the learning model 921 corresponding to information about the pulse waveform outputs status information (normal or abnormal) of the laser annealing apparatus 1 when information about the pulse waveform (beam profile) is input. Furthermore, multiple learning models 921 corresponding to the individual pieces of data and a learning model 921 corresponding to a beam profile configured by a combination of these pieces of data may be connected in parallel and used in combination. For example, the control unit 91 of the control device 9 inputs multiple beam profiles together into the first learning model 921. If the first learning model 921 judges that there is an abnormality, each beam profile for each data type may be input to a second learning model 921 that has been trained individually, and the presence or absence of an abnormality in each may be confirmed.

[0048] Although the control device 9 included in the laser annealing apparatus 1 has been described as generating the learning model 921, the present invention is not limited to this and the learning model 921 may be learned and generated by an external server device, such as a cloud server, other than the control device 9. The learning model 921 has been described as being used by the control device 9, but the present invention is not limited to this and the control device 9 may communicate with, for example, a cloud server connected to the Internet, via the communication unit 93, and acquire status information of the laser annealing apparatus 1 output by the learning model 921 implemented in the cloud server.

[0049] 4 is a flowchart showing an example of a processing procedure (during learning of the learning model 921) of the control unit 91. The control unit 91 of the control device 9 included in the laser annealing apparatus 1 receives an operation by an operator using, for example, a keyboard connected to an input / output, and performs the following processing based on the received operation.

[0050] The control unit 91 of the control device 9 acquires a beam profile (S11). The control unit 91 of the control device 9 acquires an image output from the profiler camera 66 or the like as a beam profile.

[0051] The control unit 91 of the control device 9 acquires status information of the laser annealing device 1 (S12). The memory unit 92 of the control device 9 stores a beam profile and status information indicating whether the status of the laser annealing device 1 is normal or abnormal, in association with each other. By referring to the memory unit 92, the control unit 91 of the control device 9 acquires the status information of the laser annealing device 1.

[0052] The control unit 91 of the control device 9 generates training data using the acquired beam profile and status information (S13). The control unit 91 of the control device 9 generates training data in which the beam profile is used as problem data and the status information of the laser annealing device 1 is used as answer data. When generating the problem data, the control unit 91 of the control device 9 may perform standard deviation processing, averaging processing, standardization processing, dimension reduction processing, etc. using detected values ​​at multiple points in time.

[0053] The control unit 91 of the control device 9 uses the generated training data to generate a learning model 921 (S14). The control unit 91 of the control device 9 generates the learning model 921 by, for example, training a neural network using the generated training data.

[0054] 5 is a flowchart showing an example of a processing procedure by the control unit 91. The control unit 91 of the control device 9 included in the laser annealing apparatus 1 receives an operation by an operator via, for example, a keyboard connected to the input / output I / F 94, and performs the following processing based on the received operation.

[0055] The control unit 91 of the control device 9 acquires a beam profile before setting conditions (S101). When performing processing condition setting processing for processing the substrate 8 (production process), the control unit 91 of the control device 9 performs the condition setting processing (condition setting) by irradiating the laser light multiple times with, for example, stepwise different energy densities within a predetermined energy density range. The control unit 91 of the control device 9 acquires images, etc. from the profiler camera 66, and obtains the images, etc. as a beam profile. The control unit 91 of the control device 9 may further acquire information on the pulse waveform from the biplanar phototube 62 as a beam profile.

[0056] The control unit 91 of the control device 9 inputs the acquired beam profile to the learning model 921 (S102). The control unit 91 of the control device 9 inputs the acquired beam profile to the learning model 921. The learning model 921 outputs (estimates) the state (state information) of the laser annealing apparatus 1 according to the input beam profile. The state information includes information on whether the state of the laser annealing apparatus 1 is normal or abnormal. The control unit 91 of the control device 9 can derive the state information by acquiring the state (state information) of the laser annealing apparatus 1 output by the learning model 921.

[0057] The control unit 91 of the control device 9 outputs the state (state information) of the laser annealing device 1 acquired from the learning model 921 (S103). The control unit 91 of the control device 9 associates the state (state information) of the laser annealing device 1 acquired from the learning model 921 with the beam profile, and outputs the state information to, for example, the display device 941. This makes it possible to notify the manager of the laser annealing device 1 of the current state of the laser annealing device 1 in the preparatory work, which is a pre-process for setting conditions such as adjusting control parameters.

[0058] The control unit 91 of the control device 9 determines whether the state of the laser annealing device 1 is abnormal or not (S104). The control unit 91 of the control device 9 determines whether the state of the laser annealing device 1 is abnormal or normal based on the value indicated by the state (state information) of the laser annealing device 1 acquired from the learning model 921.

[0059] If the value indicated by the state (state information) of the laser annealing apparatus 1 is not abnormal (S104: NO), that is, if the state of the laser annealing apparatus 1 is normal, the control unit 91 of the control device 9 starts a condition setting process (S1041). By performing the condition setting process, it is possible to adjust control parameters such as the transmittance of the attenuator 3, for example.

[0060] The control unit 91 of the control device 9 starts production (S1042). The control unit 91 of the control device 9 uses the control parameters adjusted by the condition setting to perform processing (production process) of the substrate 8. After performing (completing) S1042, the control unit 91 of the control device 9 may perform loop processing to execute the processing of S101 again.

[0061] If the value indicated by the state (state information) of the laser annealing apparatus 1 is abnormal (S104: YES), the control unit 91 of the control device 9 outputs a notification signal indicating that the state of the laser annealing apparatus 1 is abnormal (S105). If the value indicated by the state (state information) of the laser annealing apparatus 1 is abnormal, the control unit 91 of the control device 9 outputs a notification signal indicating that the state of the laser annealing apparatus 1 is abnormal to, for example, the display device 941 or a mobile terminal of the administrator of the laser annealing apparatus 1.

[0062] After executing the process of S105, the control unit 91 of the control device 9 may perform a loop process to execute the process of S101 again, thereby continuing to monitor the appropriateness of the beam profile.

[0063] 6 is a diagram illustrating an example of a management screen of the laser annealing apparatus 1. The control unit 91 of the control device 9 uses the acquired beam profile and the derived (estimated) state information of the laser annealing apparatus 1 to generate a management screen (screen data) shown as an example in this embodiment, and outputs it to, for example, the display device 941.

[0064] The management screen of the laser annealing apparatus 1 includes multiple display areas that show, in list format, data related to the laser, data related to the optical system, and data related to observation of the substrate 8, which are data that make up the beam profile, and an area that displays estimated status information of the laser annealing apparatus 1.

[0065] The display area for laser-related data includes display sections for the laser output system, control system, laser gas system, maintenance system, and utility system. The laser output system display section displays the laser pulse energy, standard deviation (σ) of the laser pulse energy, and pulse waveform. The control system display section displays the electrode voltage, oscillation frequency, and resonator temperature. The laser gas system display section displays the gas ratio and pressure. The maintenance system display section displays the replacement status and condition of consumables. The utility system display section displays the chiller cooling temperature, flow rate, and power supply voltage.

[0066] The display area for data related to the optical system includes display sections for the line beam minor axis shape, line beam major axis shape, raw beam shape, and display items for transmittance and polarization ratio. The display section for the line beam minor axis shape displays the minor axis width, shoulder width, standard deviation (σ) within the minor axis width, and tilt. The display section for the line beam major axis shape displays the major axis width and standard deviation (σ) within the major axis width. The display sections for the raw beam shape display display the shape, position, output angle, and intensity. The transmittance display item displays the transmittance of the attenuator 3. The polarization ratio display item displays the polarization ratio of the polarization ratio control unit 4.

[0067] The area displaying the status information of the laser annealing apparatus 1 includes a graph display area displaying the change over time of the feature of the beam profile, and a display area showing the current status of the laser annealing apparatus 1. The display area displays whether the status of the laser annealing apparatus 1 at the current time (this preparation step) is normal or abnormal.

[0068] The graph display area displays the beam profile feature quantities obtained in the multiple preparatory steps previously performed in a graph format. The horizontal axis of the graph indicates the time axis (elapsed time) that shows the multiple preparatory steps performed when the beam profile was obtained in chronological order, and the vertical axis of the graph indicates the quantified beam profile feature quantities.

[0069] The control unit 91 of the control device 9 may, for example, acquire and digitize the feature of the beam profile extracted by the intermediate layer of the learning model 921, and map the digitized feature on a graph. The feature may be digitized so that the degree of abnormality of the beam profile increases as the value of the feature increases. A threshold for the digitized feature is indicated by a dotted line. As a result, if the digitized feature is equal to or greater than a predetermined threshold, it can be determined that the state of the laser annealing apparatus 1 is abnormal. Furthermore, the degree of abnormality of the beam profile can be determined according to the difference between the threshold and the digitized feature.

[0070] The control unit 91 of the control device 9 may derive feature values ​​for future (next and subsequent preparation steps) after the present time based on feature values ​​of multiple beam profiles at the present time (this preparation step) and in the past (previous preparation steps), and map the derived future feature values ​​on a graph.

[0071] When deriving future features, the control unit 91 of the control device 9 may use a feature learning model that, based on an input feature, estimates (outputs) a feature subsequent to the input feature (the next-highest feature). The feature learning model is configured, for example, by an RNN (recurrent neural network). The control unit 91 of the control device 9 constructs (generates) a neural network (feature learning model) that takes a plurality of time-series feature values ​​as input and outputs feature values ​​at one or more future points in time by learning based on training data in which question data is used as the question data and feature values ​​at multiple future points in time are used as the answer data.

[0072] Although the control unit 91 of the control device 9 has been described as deriving future feature quantities using a feature quantity learning model, this is not limiting. The control unit 91 of the control device 9 may derive future feature quantities using, for example, a linear approximation method using the least squares method or a nonlinear approximation method based on feature quantities of a plurality of beam profiles at the present time (the current preparation step) and in the past (previous preparation steps). In this way, by deriving feature quantities for future steps (preparation steps after the present time) based on feature quantities of a plurality of beam profiles at the present time (the present preparation step) and in the past (previous preparation steps), it is possible to grasp the tendency of changes over time in the beam profile.

[0073] According to this embodiment, the control unit 91 of the control device 9 uses the learning model 921 to acquire information (status information) about the status of the laser annealing device 1, which is derived (estimated) based on the beam profile acquired from the detection unit. The status (status information) of the laser annealing device 1 includes correct / incorrect information about whether the laser annealing device 1 is normal or abnormal. This allows the control unit 91 of the control device 9 to efficiently determine the status of the laser annealing device 1, i.e., whether it is normal or abnormal, by using the learning model 921. When the control unit 91 of the control device 9 determines that the status of the laser annealing device 1 is abnormal, it outputs an alarm signal, thereby being able to notify the manager of the laser annealing device 1 (laser irradiation device) or the like that an abnormality has occurred.

[0074] According to this embodiment, the beam profile input to the learning model 921 includes at least one of the laser pulse energy of the laser light emitted from the laser light source, the pulse waveform, and the minor axis shape and major axis shape of the line beam-like laser light shaped by the optical system, thereby improving the estimation accuracy by the learning model 921. The beam profile input to the learning model 921 includes a standard deviation calculated based on a plurality of detection values ​​detected at a predetermined period, thereby improving the estimation accuracy by the learning model 921.

[0075] According to this embodiment, when performing a preparation step before processing the substrate 8, the control unit 91 of the control device 9 determines whether the state of the laser annealing device 1 is abnormal based on the beam profile of the laser light irradiated in the preparation step, and therefore can determine whether the laser annealing device 1 is normal or not before producing the substrate 8 through processing. This makes it possible to prevent the substrate 8 from being processed when the laser annealing device 1 is in an abnormal state.

[0076] (Other embodiments) 7, 8, 9, 10, and 11 are cross-sectional views showing steps in a method for manufacturing a semiconductor device according to another embodiment (a method for manufacturing a semiconductor device). As another embodiment, a method for manufacturing a semiconductor device using the laser annealing apparatus 1 according to the above embodiment will be described. In the method for manufacturing a semiconductor device described below, an annealing process is performed using the laser annealing apparatus 1 according to the first and second embodiments in the step of crystallizing an amorphous semiconductor film.

[0077] The semiconductor device is a semiconductor device including a TFT (Thin Film Transistor), and in this case, the amorphous silicon film 84 can be crystallized by irradiating it with laser light to form a polysilicon film 85. The polysilicon film 85 is used as a semiconductor layer having a source region, a channel region, and a drain region of the TFT.

[0078] The laser annealing apparatus 1 according to the embodiment described above is suitable for manufacturing a TFT array substrate. A method for manufacturing a semiconductor device having a TFT will now be described.

[0079] First, as shown in FIG. 7, a gate electrode 82 is formed on a glass substrate 81 (substrate 8). The gate electrode 82 can be made of, for example, a metal thin film containing aluminum or the like. Next, as shown in FIG. 8, a gate insulating film 83 is formed on the gate electrode 82. The gate insulating film 83 is formed so as to cover the gate electrode 82. Thereafter, as shown in FIG. 9, an amorphous silicon film 84 is formed on the gate insulating film 83. The amorphous silicon film 84 is arranged so as to overlap the gate electrode 82 with the gate insulating film 83 interposed therebetween.

[0080] The gate insulating film 83 is a silicon nitride film (SiNx), a silicon oxide film (SiO2 film), or a laminated film thereof. Specifically, the gate insulating film 83 and the amorphous silicon film 84 are successively formed by a CVD (Chemical Vapor Deposition) method. The glass substrate 81 with the amorphous silicon film 84 becomes a semiconductor film in the laser annealing apparatus 1 (laser irradiation apparatus).

[0081] 10, the amorphous silicon film 84 is irradiated with laser light L3 using the laser annealing apparatus 1 described above to crystallize the amorphous silicon film 84, thereby forming a polysilicon film 85. As a result, the polysilicon film 85 in which silicon is crystallized is formed on the gate insulating film 83.

[0082] 11, an interlayer insulating film 86, a source electrode 87a, and a drain electrode 87b are formed on the polysilicon film 85. The interlayer insulating film 86, the source electrode 87a, and the drain electrode 87b can be formed using a general photolithography method or film formation method. The subsequent manufacturing steps will differ depending on the device to be finally manufactured, so a description thereof will be omitted.

[0083] By using the semiconductor device manufacturing method described above, it is possible to manufacture a semiconductor device equipped with a TFT including a polycrystalline semiconductor film. Such a semiconductor device is suitable for controlling high-definition displays such as organic EL (Electro Luminescence) displays. By suppressing unevenness in the polysilicon film 85 as described above, it is possible to manufacture display devices with excellent display characteristics with high productivity.

[0084] When performing this series of processing steps, the control device 9 of the laser annealing device 1 acquires information (status information) about the state of the laser annealing device 1 based on the beam profile acquired in the preparation step (processing condition setting process) for the processing step. The state (status information) of the laser annealing device 1 includes information about whether the laser annealing device 1 is normal or abnormal, so the control device 9 efficiently determines whether the laser annealing device 1 is normal, and outputs a warning signal if it determines that the state of the laser annealing device 1 is abnormal. This makes it possible to prevent the substrate 8 from being processed when the laser annealing device 1 is in an abnormal state.

[0085] The present disclosure is not limited to the above-described embodiments, and can be modified as appropriate without departing from the spirit of the present disclosure. For example, in (1), the present disclosure is not limited to the example of forming the polysilicon film 85 by irradiating the amorphous silicon film 84 with laser light, but a microcrystalline silicon film may be formed by irradiating the amorphous silicon film 84 with laser light. Also, a crystallized film may be formed by irradiating an amorphous film other than a silicon film with laser light.

[0086] The embodiments disclosed herein are illustrative in all respects and should not be considered limiting. The technical features described in each embodiment can be combined with each other, and the scope of the present invention is intended to include all modifications within the scope of the claims and the scope equivalent to the claims. [Explanation of symbols]

[0087] 1. Laser annealing device (laser irradiation device) 11 Annealing optical system 2 Laser light source 3 Attenuator 4 Polarization ratio control unit 5 Beam shaping optics 61 Reflection mirror 62 Biplanar phototube 63 OED sensor 64 Unevenness Monitor 65 projection lens 66 Profiler camera (line beam sensor) 7. Laser irradiation chamber 71 Stages 72 base 8 PCB 9 Control Device 91 Control Unit 92 Memory section 920 Recording Media P Program (Program Product) 921 Learning Model 93 Communications Department 94 Input / Output Interface 941 Display device 81 Glass substrate 82 gate electrode 83 Gate insulating film 84 Amorphous silicon film 85 Polysilicon film 86 Interlayer insulating film 87a Source electrode 87b Drain electrode

Claims

1. A laser irradiation device comprising a laser light source that emits laser light and a control unit that controls irradiation of a substrate with the laser light, The control unit acquiring a beam profile of the laser light emitted from the laser light source; a learning model that outputs a state indicating whether the laser irradiation device is abnormal when a beam profile is input, and determines whether the state of the laser irradiation device is abnormal by inputting the acquired beam profile; The beam profile is acquired in a preparatory operation that is a pre-process before setting conditions for adjusting control parameters when processing the substrate, When it is determined that the state of the laser irradiation device is normal at the time when the preparation work is performed, the step of setting conditions is started; When it is determined that the state of the laser irradiation device is abnormal, an alarm signal is output. Laser irradiation device.

2. The beam profile includes information about the shape of the laser light shaped into a line beam by an optical system into which the laser light from the laser light source is incident. The laser irradiation device according to claim 1 .

3. The beam profile includes a pulse waveform of the laser light emitted from the laser light source.

3. The laser irradiation device according to claim 1 or 2.

4. The beam profile includes a standard deviation calculated based on detection values ​​detected at a predetermined period. The laser irradiation device according to any one of claims 1 to 3.

5. A computer that controls the irradiation of the substrate with the laser light, Acquire a beam profile of the laser light emitted from the laser light source; and determining whether or not a state of a laser irradiation device including the laser light source is abnormal based on the acquired beam profile; The beam profile is acquired in a preparatory operation that is a pre-process before setting conditions for adjusting control parameters when processing the substrate, When it is determined that the state of the laser irradiation device is normal at the time when the preparation work is performed, the step of setting conditions is started; When it is determined that the state of the laser irradiation device is abnormal, an alarm signal is output. An information processing method for executing a process.

6. A computer that controls the irradiation of the substrate with the laser light, Acquire a beam profile of the laser light emitted from the laser light source; and determining whether or not a state of a laser irradiation device including the laser light source is abnormal based on the acquired beam profile; The beam profile is acquired in a preparatory operation that is a pre-process before setting conditions for adjusting control parameters when processing the substrate, When it is determined that the state of the laser irradiation device is normal at the time when the preparation work is performed, the step of setting conditions is started; When it is determined that the state of the laser irradiation device is abnormal, an alarm signal is output. A program that executes a process.

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