Substrate processing method

Abstract

The present invention relates to a substrate processing method, and more particularly to a substrate processing method for removing an oxide film formed on a substrate. A substrate processing method according to an embodiment of the present invention is a substrate processing method for processing a substrate loaded into a chamber, and includes the steps of supplying a nitrogen-containing gas into an internal space of a plasma generator provided outside the chamber, activating the nitrogen-containing gas in the internal space, supplying a hydrogen-containing gas into the internal space, and supplying the activated nitrogen-containing gas and hydrogen-containing gas in the internal space onto a substrate.

Description

[Technical Field]

[0001] The present invention relates to a substrate processing method, and more particularly to a substrate processing method for removing an oxide film formed on a substrate. [Background technology]

[0002] 2. Description of the Related Art In general, semiconductor devices or display devices are manufactured by depositing various materials in the form of thin films on a substrate and then patterning the deposited materials.

[0003] However, when a substrate is exposed to the atmosphere while being transported between processes, a native oxide film is formed on the surface of the substrate due to oxygen, moisture, etc. Because the native oxide film has imperfect crystallinity, its film quality is inferior to that of silicon oxide films formed by thermal oxidation, etc., and it can cause various problems such as unstable connections and wiring resistance in semiconductor devices or display devices.

[0004] In the past, to remove such native oxide films, a wet cleaning process was performed in a separate device. After the cleaning process, the substrate was then transported to a substrate processing apparatus for further processing, such as thin film deposition. However, removing native oxide films in a separate device for the wet cleaning process required additional expensive equipment, which increased production costs. Furthermore, while the substrate was being transported after the cleaning process, a native oxide film would form again on the surface of the substrate, resulting in ineffective removal of the native oxide film. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Republic of Korea Publication Patent No. 10-2010-0112888 Summary of the Invention [Problem to be solved by the invention]

[0006] The present invention provides a substrate processing method that can effectively remove an oxide film formed on a substrate. [Means for solving the problem]

[0007] A substrate processing method according to an embodiment of the present invention is a substrate processing method for processing a substrate loaded into a chamber, and includes the steps of supplying a nitrogen-containing gas into an internal space of a plasma generator provided outside the chamber, activating the nitrogen-containing gas in the internal space, supplying a hydrogen-containing gas into the internal space, and supplying the activated nitrogen-containing gas and hydrogen-containing gas in the internal space onto the substrate.

[0008] The nitrogen-containing gas may include at least one of N2 gas and NH3 gas.

[0009] The hydrogen-containing gas may include H2 gas.

[0010] The step of supplying the hydrogen-containing gas may include supplying the hydrogen-containing gas onto a path along which the activated nitrogen-containing gas travels into the chamber.

[0011] The hydrogen-containing gas supplied to the internal space may be at least partially activated along a path along which the activated nitrogen-containing gas moves into the chamber.

[0012] The supplying step may include simultaneously supplying the activated nitrogen-containing gas and the hydrogen-containing gas onto the substrate.

[0013] The method may further include the step of removing an oxide film formed on the substrate by reacting the nitrogen-containing gas and the hydrogen-containing gas with the oxide film.

[0014] The method may further include supplying a fluorine-containing gas to the interior space.

[0015] The fluorine-containing gas may include at least one of F2 gas, HF gas, and NF3 gas.

[0016] The step of supplying the fluorine-containing gas may include supplying the fluorine-containing gas onto a path along which the hydrogen-containing gas travels into the chamber. [Effects of the Invention]

[0017] According to an embodiment of the substrate processing method of the present invention, activated nitrogen-containing gas and hydrogen-containing gas are supplied onto the substrate from a plasma generator installed outside the chamber, thereby quickly removing native oxide films formed on the substrate and shortening the process time.

[0018] Furthermore, by using the activated nitrogen-containing gas to activate at least a portion of the supplied hydrogen-containing gas, a process gas capable of reacting with the native oxide film formed on the substrate can be generated, thereby effectively removing the native oxide film formed on the substrate. [Brief explanation of the drawings]

[0019] [Figure 1] 1 is a diagram schematically illustrating a substrate processing apparatus according to an embodiment of the present invention. [Figure 2] 1A-1D are schematic diagrams illustrating a substrate processing method according to an embodiment of the present invention; DETAILED DESCRIPTION OF THE INVENTION

[0020] Hereinafter, the embodiments of the present invention will be described in more detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, and may be embodied in various different forms. These embodiments are provided merely to complete the disclosure of the present invention and to fully convey the scope of the invention to those skilled in the art. In order to explain the invention in detail, the drawings may be exaggerated, and the same reference numerals in the drawings refer to the same components.

[0021] FIG. 1 is a diagram schematically illustrating a substrate processing apparatus according to an embodiment of the present invention.

[0022] 1, a substrate processing apparatus according to an embodiment of the present invention is an apparatus for processing a substrate, and includes a chamber 10, a substrate support unit 30 installed within the chamber 10 to support a substrate S provided within the chamber 10, and a gas injection unit 20 installed within the chamber 10 to face the substrate support unit 30 and to inject a process gas toward the substrate support unit 30. The substrate processing apparatus may further include a plasma generator 40 connected to the gas injection unit 20 and installed outside the chamber 10.

[0023] The chamber 10 provides a predetermined process space and keeps it airtight. The chamber 10 may include a body 12 having a generally circular or square planar portion and sidewalls extending upward from the planar portion to define the predetermined process space, and a generally circular or square shaped cover 14 positioned on the body 12 to keep the chamber 10 airtight. However, the chamber 10 is not limited thereto and can be manufactured in various shapes corresponding to the shape of the substrate S.

[0024] An exhaust port (not shown) may be formed in a predetermined region of the bottom surface of the chamber 10, and an exhaust pipe (not shown) connected to the exhaust port may be provided on the outside of the chamber 10. The exhaust pipe may also be connected to an exhaust device (not shown). A vacuum pump may be used as the exhaust device. Therefore, the inside of the chamber 10 can be evacuated to a predetermined reduced pressure atmosphere, for example, a predetermined pressure of 0.1 mTorr or less, using the exhaust device. The exhaust pipe may be provided not only on the bottom surface of the chamber 10, but also on the side surface of the chamber 10 below the substrate support part 30, which will be described later. Needless to say, multiple exhaust pipes and associated exhaust devices may be provided to shorten the exhaust time.

[0025] Meanwhile, a substrate S provided in the chamber 10 for a substrate processing step, such as an oxide film removal step, may be placed on the substrate support part 30. Here, the substrate S may be a substrate without a thin film formed thereon, or a substrate with a predetermined thin film formed thereon. It goes without saying that a predetermined structure, such as wiring, may also be formed on the substrate S. At this time, a native oxide film may be formed on the substrate. Such a native oxide film can be formed, for example, by exposing the substrate S to the atmosphere. When the substrate S with the native oxide film formed thereon is drawn into the process space of the chamber 10, the drawn substrate S is placed on the substrate support part 30. At this time, the substrate support part 30 may be provided with, for example, an electrostatic chuck or the like so that the substrate S can be placed and supported, and the substrate S may be adsorbed and held by the electrostatic chuck, or the substrate S may be supported by vacuum adsorption or mechanical force.

[0026] The substrate support unit 30 may be provided in a shape corresponding to the shape of the substrate S, for example, a circular or rectangular shape. The substrate support unit 30 may include a substrate support stage 32 on which the substrate S is placed and an elevator 34 disposed below the substrate support stage 32 to raise and lower the substrate support stage 32. The substrate support stage 32 may be larger than the substrate S, and the elevator 34 is disposed to support at least one region, for example, the center, of the substrate support stage 32. Once the substrate S is placed on the substrate support stage 32, the elevator 34 can move the substrate support stage 32 closer to the gas injection unit 20. A heater (not shown) may be disposed inside the substrate support stage. The heater generates heat at a predetermined temperature to heat the substrate support stage and the substrate S placed on the substrate support stage, thereby ensuring uniform deposition of a thin film on the substrate S.

[0027] The gas injection unit 20 is provided at the upper side of the chamber 10 and injects a process gas toward the substrate S. The gas injection unit 20 has a predetermined space therein, an upper side connected to the plasma generator 40, and a lower side formed with a plurality of injection holes for injecting the process gas toward the substrate S. The gas injection unit 20 may be formed in a shape corresponding to the shape of the substrate S, or may be formed in a generally circular or rectangular shape. Here, the gas injection unit 20 may be provided at a predetermined distance from the sidewall and the cover 14 of the chamber 10.

[0028] The plasma generator 40 may be disposed outside the chamber 10 and has a predetermined internal space. The internal space of the plasma generator 40 communicates with the process space of the chamber. The plasma generator 40 receives a process gas, activates the process gas in the internal space, and supplies the activated process gas to the gas injector 20. The activated process gas supplied to the gas injector 20 is injected through injection holes and supplied onto the substrate S.

[0029] The antenna unit 52 is provided to at least partially enclose the internal space of the plasma generator 40. That is, the antenna unit 52 may be provided on the outside of the plasma generator 40 to enclose the upper part of the internal space of the plasma generator 40, which extends vertically. The antenna unit 52 is supplied with power from an RF power supply 54 and can generate plasma P in the upper part of the internal space by an inductively coupled plasma (ICP) method. In this case, one end of the antenna unit 52 may be connected to the RF power supply 54 and the other end may be grounded.

[0030] The plasma generator 40 is provided with a plurality of process gas supply pipes, and the process gas supplied through the process gas supply pipes flows into the internal space of the plasma generator 40. For example, the plasma generator 40 may be provided with a first process gas supply pipe 42 and a second process gas supply pipe 44. In addition to these, the plasma generator 40 may further be provided with a third process gas supply pipe 46.

[0031] The first process gas supply pipe 42 is disposed at the upper end of the plasma generator 40 and can supply a process gas to the internal space of the plasma generator 40. Here, the process gas supplied from the first process gas supply pipe 42 may be a nitrogen-containing gas, and such a nitrogen-containing gas may contain at least one of N2 gas and NH3 gas. The nitrogen-containing gas supplied from the first process gas supply pipe 42 is activated in the upper part of the internal space enclosed by the antenna part 52, and the activated nitrogen-containing gas is supplied to the process space in the chamber 10 through the lower part of the internal space.

[0032] The second process gas supply pipe 44 is disposed on the side of the plasma generator 40 and can supply a process gas to the internal space of the plasma generator 40. The process gas supplied from the second process gas supply pipe 44 may be a hydrogen-containing gas, and such a hydrogen-containing gas may contain H gas. The second process gas supply pipe 44 is disposed below the antenna unit 52 and can supply the hydrogen-containing gas to the internal space of the plasma generator 40. That is, the second process gas supply pipe 44 can supply the hydrogen-containing gas to the lower part of the internal space, thereby enabling the second process gas supply pipe 44 to supply the hydrogen-containing gas along the path along which the nitrogen-containing gas activated by the antenna unit 52 moves to the process space within the chamber 10.

[0033] The third process gas supply pipe 46 is disposed on the side of the plasma generator 40 and can supply a process gas to the internal space of the plasma generator 40. The process gas supplied from the second process gas supply pipe 44 may be a fluorine-containing gas, and such a fluorine-containing gas may contain at least one of F2 gas, HF gas, and NF3 gas. Here, the third process gas supply pipe 46 is disposed below the second process gas supply pipe 44 and can supply the fluorine-containing gas to the internal space of the plasma generator 40. That is, the third process gas supply pipe 46 can supply the fluorine-containing gas to the lowest part of the internal space, thereby enabling the third process gas supply pipe 46 to supply the fluorine-containing gas along the path along which the hydrogen-containing gas supplied via the second process gas supply pipe 44 travels to the process space in the chamber 10.

[0034] The substrate processing method of the present invention will be described in detail below with reference to Fig. 2. In describing the substrate processing method according to an embodiment of the present invention, descriptions that overlap with the description of the substrate processing apparatus described above will be omitted.

[0035] FIG. 2 is a diagram schematically illustrating a substrate processing method according to an embodiment of the present invention.

[0036] Referring to FIG. 2, a substrate processing method according to an embodiment of the present invention is a substrate processing method for processing a substrate S loaded into a chamber 10, and includes a step (S100) of supplying a nitrogen-containing gas into the internal space of a plasma generator 40 installed outside the chamber 10, a step (S200) of activating the nitrogen gas in the internal space, a step (S300) of supplying a hydrogen-containing gas into the internal space, and a step (S400) of supplying the activated nitrogen-containing gas and hydrogen-containing gas in the internal space onto the substrate S.

[0037] Here, the substrate processing method according to an embodiment of the present invention is a substrate processing method for processing a substrate S loaded into a chamber 10, and may be a method for removing an oxide film formed on the substrate S, i.e., a natural oxide film formed when the substrate is exposed to the atmosphere.

[0038] Here, the substrate S may be carried in by being brought into the process space of the chamber 10. Here, the substrate S carried into the process space may be placed on the substrate support part 30. In this case, the substrate support part 20 may be provided with, for example, an electrostatic chuck or the like so that the substrate S can be placed and supported, and the substrate S may be adsorbed and held by the electrostatic chuck, or the substrate S may be supported by vacuum adsorption or mechanical force, as described above.

[0039] The step of supplying a nitrogen-containing gas (S100) supplies the nitrogen-containing gas to the internal space of a plasma generator 40 provided outside the chamber 10. That is, the plasma generator 40 may be provided outside the chamber 10 and has a predetermined internal space that communicates with the process space of the chamber 10.

[0040] The step of supplying a nitrogen-containing gas (S100) is performed by supplying the nitrogen-containing gas to the internal space of the plasma generator 40 from a first process gas supply pipe 42 disposed at the upper end of the plasma generator 40. Here, the nitrogen-containing gas may contain at least one of N2 gas and NH3 gas.

[0041] In the step of activating the nitrogen-containing gas (S200), the nitrogen-containing gas is activated in the internal space of the plasma generator 40. As described above, the antenna unit 52 may be provided outside the plasma generator 40 so as to enclose the upper part of the internal space of the plasma generator 40, which extends vertically. Therefore, the nitrogen-containing gas supplied from the first process gas supply pipe 42 and the upper end of the plasma generator 40 is activated in the upper part of the internal space enclosed by the antenna unit 52 to generate plasma P. As a result, for example, N gas can be activated with ions or radicals of N, N, etc. in the upper part of the internal space, and NH gas can be activated with ions or radicals of N, H, NH, NH, NH, NH3, etc. in the upper part of the internal space.

[0042] The step (S300) of supplying a hydrogen-containing gas supplies the hydrogen-containing gas to the internal space of the plasma generator 40. That is, the step (S300) of supplying a hydrogen-containing gas is performed by supplying the hydrogen-containing gas to the internal space of the plasma generator 40 from a second process gas supply pipe 44 disposed on the side of the plasma generator 40. Here, the hydrogen-containing gas may contain H gas.

[0043] As described above, the second process gas supply pipe 44 is disposed below the antenna unit 52 and can supply the hydrogen-containing gas to the lower portion of the internal space of the plasma generator 40. That is, in the step of supplying the hydrogen-containing gas (S300), the hydrogen-containing gas can be supplied along the path along which the activated nitrogen-containing gas moves into the chamber 10. Therefore, the hydrogen-containing gas supplied to the internal space in the step of supplying the hydrogen-containing gas (S300) can be at least partially activated along the path along which the activated nitrogen-containing gas moves into the chamber 10. That is, the H gas can be at least partially activated into ions or radicals such as H, H, etc. by the activated nitrogen-containing gas, and the activated hydrogen-containing gas can react with the already activated nitrogen-containing gas to form various N-H bonds.

[0044] Here, the substrate processing method according to the embodiment of the present invention may further include supplying a fluorine-containing gas into the interior space.

[0045] The step of supplying a fluorine-containing gas supplies the fluorine-containing gas to the internal space of the plasma generator 40. That is, the step of supplying a fluorine-containing gas (S300) is performed by supplying the fluorine-containing gas to the internal space of the plasma generator 40 from a third process gas supply pipe 46 disposed on the side of the plasma generator 40. Here, the fluorine-containing gas may contain at least one of F2 gas, HF gas, and NF3 gas.

[0046] As described above, the third process gas supply pipe 46 may be disposed below the second process gas supply pipe 44 to supply a fluorine-containing gas to the internal space of the plasma generator 40. That is, the step of supplying a fluorine-containing gas may supply the fluorine-containing gas along a path along which the hydrogen-containing gas travels into the chamber 10. Therefore, the fluorine-containing gas supplied to the internal space in the step of supplying a fluorine-containing gas may be at least partially activated along a path along which the at least partially activated hydrogen-containing gas travels into the chamber 10. That is, F gas may be at least partially activated with ions or radicals such as F and F by the at least partially activated hydrogen-containing gas; HF gas may be activated with ions or radicals such as H and HF by the at least partially activated hydrogen-containing gas; and NF gas may be activated with ions or radicals such as N, F, NF, NF, NF, and NF by the at least partially activated hydrogen-containing gas. The activated fluorine-containing gas may react with at least one of the already activated nitrogen-containing gas and the already activated hydrogen-containing gas to form various bonds.

[0047] The step of supplying onto the substrate S (S400) is to supply the nitrogen-containing gas and hydrogen-containing gas activated in the internal space of the plasma generator 40 onto the substrate S. Since the internal space of the plasma generator 40 and the process space of the chamber 10 are connected to each other, the nitrogen-containing gas and hydrogen-containing gas activated in the internal space of the plasma generator 40 are provided to the gas injection unit 20 and injected through the injection holes to be supplied onto the substrate S.

[0048] In this case, the step (S400) of supplying onto the substrate S may be a step of simultaneously supplying an activated nitrogen-containing gas and a hydrogen-containing gas onto the substrate S. Furthermore, when the step of supplying a fluorine-containing gas into the internal space is further included, the step (S400) of supplying onto the substrate S may be a step of simultaneously supplying an activated nitrogen-containing gas, a hydrogen-containing gas, and a fluorine-containing gas onto the substrate S. Here, it goes without saying that the activated nitrogen-containing gas, the hydrogen-containing gas, and the fluorine-containing gas do not necessarily have to be supplied in a separated state, but may at least partially react with each other, and the reacted gases may be supplied onto the substrate S.

[0049] In this way, when activated nitrogen-containing gas and hydrogen-containing gas, or activated nitrogen-containing gas, hydrogen-containing gas, and nitrogen-containing gas are supplied onto the substrate S, the gas reacts with the oxide film formed on the substrate S, thereby removing the native oxide film formed on the substrate S. At this time, residual gas that did not react with water vapor (HO) generated by the reaction of the gas supplied onto the substrate S with the native oxide film can be exhausted to the outside of the chamber 10 by the exhaust means.

[0050] As described above, according to the substrate processing method according to an embodiment of the present invention, activated nitrogen-containing gas and hydrogen-containing gas are supplied onto the substrate from a plasma generator installed outside the chamber, thereby quickly removing the native oxide film formed on the substrate and shortening the process time.

[0051] Furthermore, by using the activated nitrogen-containing gas to activate at least a portion of the supplied hydrogen-containing gas, a process gas capable of reacting with the native oxide film formed on the substrate can be generated, thereby effectively removing the native oxide film formed on the substrate.

[0052] Although the preferred embodiments of the present invention have been described and illustrated using specific terms, these terms are merely for the purpose of clearly describing the present invention, and it is clear that various modifications and changes can be made to the embodiments of the present invention and the described terms without departing from the technical spirit and scope of the claims. These modified embodiments should not be understood separately from the spirit and scope of the present invention, but should be considered to belong to the scope of the claims of the present invention.

Claims

1. A substrate processing method for processing a substrate loaded into a chamber, comprising: supplying a nitrogen-containing gas into an internal space of a plasma generator provided outside the chamber; activating a nitrogen-containing gas in the interior space; supplying a hydrogen-containing gas into the interior space; supplying activated nitrogen-containing gas and hydrogen-containing gas onto the substrate in the interior space; Including, The step of supplying a hydrogen-containing gas includes: supplying the hydrogen-containing gas onto a path along which the activated nitrogen-containing gas travels into the chamber; the hydrogen-containing gas supplied to the internal space is at least partially activated by the activated nitrogen-containing gas along a path along which the activated nitrogen-containing gas moves into the chamber; Substrate processing method.

2. The nitrogen-containing gas is N ２ Gas and NH ３ The substrate processing method according to claim 1 , further comprising at least one of a gas.

3. The hydrogen-containing gas is H ２ The method of claim 1 , further comprising a gas.

4. The step of providing on the substrate comprises:

2. The substrate processing method according to claim 1, wherein the activated nitrogen-containing gas and the hydrogen-containing gas are simultaneously supplied onto the substrate.

5. 2. The substrate processing method according to claim 1, further comprising the step of removing an oxide film formed on the substrate by reacting the nitrogen-containing gas and the hydrogen-containing gas with the oxide film.

6. The substrate processing method of claim 1 , further comprising the step of supplying a fluorine-containing gas into the interior space.

7. The fluorine-containing gas is F ２ Gas, HF gas and NF ３ The substrate processing method according to claim 6 , wherein the gas contains at least one of the following gases:

8. The step of supplying a fluorine-containing gas includes:

7. The substrate processing method according to claim 6, wherein the fluorine-containing gas is supplied onto a path along which the hydrogen-containing gas moves into the chamber.

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