electronic machinery

Abstract

To provide an electronic apparatus capable of suppressing damage to a sensor due to a stress caused by excessive bend.SOLUTION: An electronic apparatus in an embodiment includes a flexible film-shaped insulation base material, and a sensor arranged on the insulation base material. The insulation base material has a detection area where the sensor is arranged, and a peripheral area on an outer side of the detection area. On the peripheral area, a reinforcement component extending along an outer periphery of the insulation base material is arranged.SELECTED DRAWING: Figure 5

Description

[Technical Field]

[0001] FIELD An embodiment of the present invention relates to an electronic device. [Background technology]

[0002] In recent years, the use of flexible film-type substrates has been studied in various fields. For example, a flexible film-type substrate equipped with various sensors such as pressure sensors, temperature sensors, and photodiodes can be attached to the curved surfaces of electronic device housings, the human body, and other surfaces.

[0003] In such a film-like flexible substrate, measures must be taken to prevent the sensor from being damaged by stress caused by excessive bending. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2015-198101 [Patent Document 2] Japanese Patent Application Laid-Open No. 2015-198102 [Patent Document 3] Japanese Patent Application Laid-Open No. 2017-118109 [Patent Document 4] Japanese Patent Application Laid-Open No. 2017-113088 Summary of the Invention [Problem to be solved by the invention]

[0005] An object of this embodiment is to provide an electronic device that can prevent the sensor from being damaged by stress caused by excessive bending. [Means for solving the problem]

[0006] According to one embodiment, an electronic device includes a flexible insulating substrate having a film shape and a sensor disposed on the insulating substrate. The insulating substrate has a detection region where the sensor is disposed and a peripheral region outside the detection region. A reinforcing member extending along the periphery of the insulating substrate is disposed in the peripheral region. The sensor further includes an insulating member disposed between the detection region and the reinforcing member so as to extend along the reinforcing member. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a plan view showing a detection device according to an embodiment. [Figure 2] FIG. 2 is a block diagram showing an example of the configuration of the detection device according to the embodiment. [Figure 3] FIG. 3 is a circuit diagram showing the detection device according to the embodiment. [Figure 4] FIG. 4 is a circuit diagram showing a plurality of partial detection areas according to the embodiment. [Figure 5] FIG. 5 is another plan view showing the detection device according to the same embodiment. [Figure 6] FIG. 6 is a cross-sectional view showing a cross section of the detection device taken along line AB shown in FIG. [Figure 7] FIG. 7 is another cross-sectional view showing a cross section of the detection device according to the same embodiment. [Figure 8] FIG. 8 is yet another cross-sectional view showing a cross section of the detection device according to the same embodiment. [Figure 9] FIG. 9 is yet another cross-sectional view showing a cross section of the detection device according to the same embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, this embodiment will be described with reference to the drawings. The disclosure is merely an example, and appropriate modifications that a person skilled in the art can easily make while maintaining the gist of the invention are naturally included within the scope of the present invention. Furthermore, the drawings may be schematic in terms of the width, thickness, shape, etc. of each part compared to the actual embodiment for clarity of explanation, but these are merely examples and are not intended to limit the interpretation of the present invention. Furthermore, in this specification and each drawing, components that perform the same or similar functions as those described above with reference to the previous drawings are designated by the same reference numerals, and redundant detailed descriptions may be omitted as appropriate.

[0009] FIG. 1 is a plan view showing a detection device 1 according to one embodiment. The detection device 1 may also be referred to as an electronic device. As shown in FIG. 1, the detection device 1 includes a sensor substrate 21, a sensor unit 10, a gate line driving circuit 15, a signal line selection circuit 16, a detection circuit 48, a control circuit 122, a power supply circuit 123, a first light source substrate 51, a second light source substrate 52, a first light source 53, and a second light source 54. The first light source substrate 51 is provided with a plurality of first light sources 53. The second light source substrate 52 is provided with a plurality of second light sources 54.

[0010] A control board 121 is electrically connected to the sensor substrate 21 via a flexible printed circuit board 71. The flexible printed circuit board 71 is provided with a detection circuit 48. The control board 121 is provided with a control circuit 122 and a power supply circuit 123. The control circuit 122 is, for example, an FPGA (Field Programmable Gate Array). The control circuit 122 supplies control signals to the sensor unit 10, the gate line driving circuit 15, and the signal line selection circuit 16 to control the detection operation of the sensor unit 10. The control circuit 122 also supplies control signals to the first light source 53 and the second light source 54 to control the lighting or non-lighting of the first light source 53 and the second light source 54. The power supply circuit 123 supplies voltage signals such as a sensor power supply signal VDDSNS (see FIG. 4) to the sensor unit 10, the gate line driving circuit 15, and the signal line selection circuit 16. The power supply circuit 123 also supplies a power supply voltage to the first light source 53 and the second light source 54.

[0011] The sensor substrate 21 has a detection area AA and a peripheral area GA. The detection area AA is an area where a plurality of photodiodes PD (see FIG. 4) of the sensor unit 10 are provided. The peripheral area GA is an area between the outer periphery of the detection area AA and the end of the sensor substrate 21, where a plurality of photodiodes PD are not provided.

[0012] The gate line driving circuit 15 and the signal line selection circuit 16 are provided in the peripheral area GA. Specifically, the gate line driving circuit 15 is provided in a region of the peripheral area GA extending along the second direction Dy. The signal line selection circuit 16 is provided in a region of the peripheral area GA extending along the first direction Dx, and is provided between the sensor unit 10 and the detection circuit 48.

[0013] In the following description, the first direction Dx is a direction in a plane parallel to the sensor substrate 21. The second direction Dy is a direction in a plane parallel to the sensor substrate 21, and is a direction perpendicular to the first direction Dx. The second direction Dy may intersect with the first direction Dx without being perpendicular thereto. Furthermore, "planar view" refers to the positional relationship when viewed from a direction perpendicular to the sensor substrate 21.

[0014] The plurality of first light sources 53 are provided on the first light source substrate 51 and arranged along the second direction Dy. The plurality of second light sources 54 are provided on the second light source substrate 52 and arranged along the second direction Dy. The first light source substrate 51 and the second light source substrate 52 are electrically connected to the control circuit 122 and the power supply circuit 123 via terminal portions 124 and 125 provided on the control board 121, respectively.

[0015] The plurality of first light sources 53 and the plurality of second light sources 54 may be, for example, inorganic light emitting diodes (LEDs) or organic light emitting diodes (OLEDs). The plurality of first light sources 53 and the plurality of second light sources 54 emit first light and second light of different wavelengths, respectively.

[0016] The first light emitted from the first light source 53 is mainly reflected by the surface of the object to be detected, such as a finger, and enters the sensor unit 10. As a result, the sensor unit 10 can detect a fingerprint by detecting the uneven shape of the surface of the finger or the like. The second light emitted from the second light source 54 is mainly reflected by the inside of the finger or the like or passes through the finger or the like and enters the sensor unit 10. As a result, the sensor unit 10 can detect information about the living body inside the finger or the like. The information about the living body includes, for example, the pulse wave, pulse rate, blood vessel image, etc. of the finger or palm. In other words, the detection device 1 may be configured as a fingerprint detection device that detects fingerprints, or a vein detection device that detects blood vessel patterns such as veins.

[0017] The first light may have a wavelength of 500 nm or more and 600 nm or less, for example, approximately 550 nm, and the second light may have a wavelength of 780 nm or more and 950 nm or less, for example, approximately 850 nm. In this case, the first light is blue or green visible light, and the second light is infrared light. Sensor unit 10 can detect a fingerprint based on the first light emitted from first light source 53. The second light emitted from second light source 54 is reflected from the inside of a detection object such as a finger or transmitted through or absorbed by the finger or the like, and then enters sensor unit 10. This allows sensor unit 10 to detect a pulse wave or a blood vessel image (blood vessel pattern) as information about the inside of a biological body such as a finger.

[0018] Alternatively, the first light may have a wavelength of 600 nm or more and 700 nm or less, for example, about 660 nm, and the second light may have a wavelength of 780 nm or more and 900 nm or less, for example, about 850 nm. In this case, based on the first light emitted from the first light source 53 and the second light emitted from the second light source 54, the sensor unit 10 can detect information about the living body, such as pulse wave, pulse rate, and blood vessel image, as well as blood oxygen saturation. In this way, the detection device 1 has the first light source 53 and multiple second light sources 54, and therefore can detect various pieces of information about the living body by performing detection based on the first light and detection based on the second light.

[0019] The arrangement of the first light source 53 and the second light source 54 shown in FIG. 1 is merely an example and can be changed as appropriate. The detection device 1 is provided with multiple types of light sources (first light source 53 and second light source 54). However, this is not limited to this, and the light source may be of one type. For example, multiple first light sources 53 and multiple second light sources 54 may be arranged on each of the first light source substrate 51 and the second light source substrate 52. Furthermore, the number of light source substrates on which the first light source 53 and the second light source 54 are arranged may be one or three or more. Alternatively, it is sufficient that at least one or more light sources are arranged.

[0020] 2 is a block diagram showing an example of the configuration of the detection device 1 according to this embodiment. As shown in FIG. 2, the detection device 1 further includes a detection control unit 11 and a detection unit 40. Some or all of the functions of the detection control unit 11 are included in a control circuit 122. In addition, some or all of the functions of the detection unit 40 other than the detection circuit 48 are included in the control circuit 122.

[0021] The sensor unit 10 has a plurality of photodiodes PD. The sensor unit 10 may have, for example, a pressure sensor or a temperature sensor instead of the plurality of photodiodes PD. The photodiodes PD of the sensor unit 10 output an electrical signal corresponding to the irradiated light as a detection signal Vdet to the signal line selection circuit 16. The sensor unit 10 also performs detection in accordance with a gate drive signal Vgcl supplied from the gate line drive circuit 15.

[0022] The detection control unit 11 is a circuit that supplies control signals to the gate line driving circuit 15, the signal line selection circuit 16, and the detection unit 40, respectively, and controls their operations. The detection control unit 11 supplies various control signals, such as a start signal STV, a clock signal CK, and a reset signal RST1, to the gate line driving circuit 15. The detection control unit 11 also supplies various control signals, such as a selection signal ASW, to the signal line selection circuit 16. The detection control unit 11 also supplies various control signals to the first light source 53 and the second light source 54, and controls the lighting and non-lighting of each.

[0023] The gate line driving circuit 15 is a circuit that drives multiple gate lines GCL (see FIG. 3) based on various control signals. The gate line driving circuit 15 selects the multiple gate lines GCL sequentially or simultaneously and supplies a gate driving signal Vgcl to the selected gate lines GCL. In this way, the gate line driving circuit 15 selects multiple photodiodes PD connected to the gate lines GCL.

[0024] The signal line selection circuit 16 is a switch circuit that sequentially or simultaneously selects a plurality of signal lines SGL (see FIG. 3). The signal line selection circuit 16 is, for example, a multiplexer. The signal line selection circuit 16 connects the selected signal line SGL to the detection circuit 48 based on a selection signal ASW supplied from the detection control unit 11. As a result, the signal line selection circuit 16 outputs a detection signal Vdet of the photodiode PD to the detection unit 40.

[0025] The detection unit 40 includes a detection circuit 48, a signal processing unit 44, a coordinate extraction unit 45, a storage unit 46, a detection timing control unit 47, an image processing unit 49, and an output processing unit 50. Based on a control signal supplied from the detection control unit 11, the detection timing control unit 47 controls the detection circuit 48, the signal processing unit 44, the coordinate extraction unit 45, and the image processing unit 49 so that they operate in synchronization.

[0026] The detection circuit 48 is, for example, an analog front end (AFE) circuit. The detection circuit 48 is a signal processing circuit having at least the functions of a detection signal amplifier 42 and an A / D converter 43. The detection signal amplifier 42 amplifies the detection signal Vdet. The A / D converter 43 converts the analog signal output from the detection signal amplifier 42 into a digital signal.

[0027] The signal processing unit 44 is a logic circuit that detects a predetermined physical quantity input to the sensor unit 10 based on the output signal of the detection circuit 48. When a finger touches or approaches the detection surface, the signal processing unit 44 can detect unevenness on the surface of the finger or palm based on the signal from the detection circuit 48. The signal processing unit 44 can also detect information about the living body based on the signal from the detection circuit 48. The information about the living body includes, for example, an image of the blood vessels of the finger or palm, a pulse wave, a pulse rate, and a blood oxygen concentration.

[0028] The signal processing unit 44 may also acquire detection signals Vdet (information about the living body) simultaneously detected by a plurality of photodiodes PD and average these signals. In this case, the detection unit 40 can suppress measurement errors caused by noise and relative positional deviation between the object to be detected, such as a finger, and the sensor unit 10, thereby enabling stable detection.

[0029] The storage unit 46 temporarily stores the signals calculated by the signal processing unit 44. The storage unit 46 may be, for example, a RAM (Random Access Memory), a register circuit, or the like.

[0030] The coordinate extraction unit 45 is a logic circuit that calculates the detection coordinates of the unevenness of the surface of the finger or the like when the signal processing unit 44 detects contact or proximity of a finger. The coordinate extraction unit 45 is also a logic circuit that calculates the detection coordinates of the blood vessels of the finger or palm. The image processing unit 49 combines the detection signals Vdet output from each photodiode PD of the sensor unit 10 to generate two-dimensional information indicating the shape of the unevenness of the surface of the finger or the like and two-dimensional information indicating the shape of the blood vessels of the finger or palm. The coordinate extraction unit 45 may output the detection signal Vdet as the sensor output voltage Vo without calculating the detection coordinates. The coordinate extraction unit 45 and the image processing unit 49 may not be included in the detection unit 40.

[0031] The output processing unit 50 functions as a processing unit that performs processing based on outputs from the multiple photodiodes PD. The output processing unit 50 may include the detected coordinates determined by the coordinate extraction unit 45, the two-dimensional information generated by the image processing unit 49, etc. in the sensor output voltage Vo. Furthermore, the function of the output processing unit 50 may be integrated into another configuration (for example, the image processing unit 49, etc.).

[0032] Next, an example of the circuit configuration of the detection device 1 will be described. Fig. 3 is a circuit diagram showing the detection device 1. As shown in Fig. 3, the sensor unit 10 has a plurality of partial detection areas PAA arranged in a matrix. A photodiode PD is provided in each of the plurality of partial detection areas PAA.

[0033] The gate lines GCL extend in a first direction Dx and are connected to a plurality of partial detection areas PAA arranged in the first direction Dx. Furthermore, a plurality of gate lines GCL(1), GCL(2), ..., GCL(8) are arranged in a second direction Dy and are each connected to a gate line driving circuit 15. In the following description, when it is not necessary to distinguish between the plurality of gate lines GCL(1), GCL(2), ..., GCL(8), they will simply be referred to as gate lines GCL. Furthermore, for ease of understanding, eight gate lines GCL are shown in FIG. 3, but this is merely an example, and M gate lines GCL (M is 8 or more, for example, M=256) may be arranged.

[0034] The signal line SGL extends in the second direction Dy and is connected to the photodiodes PD of the plurality of partial detection areas PAA arranged in the second direction Dy. The plurality of signal lines SGL(1), SGL(2), ..., SGL(12) are arranged in the first direction Dx and are each connected to the signal line selection circuit 16 and the reset circuit 17. In the following description, when it is not necessary to distinguish between the plurality of signal lines SGL(1), SGL(2), ..., SGL(12), they will simply be referred to as signal lines SGL.

[0035] For ease of understanding, 12 signal lines SGL are shown, but this is merely an example, and N signal lines SGL (N is 12 or more, for example, N=252) may be arranged. The resolution of the sensor is, for example, 508 dpi (dots per inch), and the number of cells is 252×256. In FIG. 3, the sensor unit 10 is provided between the signal line selection circuit 16 and the reset circuit 17. However, this is not limiting, and the signal line selection circuit 16 and the reset circuit 17 may be connected to ends of the signal lines SGL in the same direction.

[0036] The gate line driving circuit 15 receives various control signals, such as a start signal STV, a clock signal CK, and a reset signal RST1, from the control circuit 122 (see FIG. 1). Based on the various control signals, the gate line driving circuit 15 sequentially selects multiple gate lines GCL(1), GCL(2), ..., GCL(8) in a time-division manner. The gate line driving circuit 15 supplies a gate driving signal Vgcl to the selected gate line GCL. As a result, the gate driving signal Vgcl is supplied to multiple first switching elements Tr connected to the gate line GCL, and multiple partial detection areas PAA arranged in the first direction Dx are selected as detection targets.

[0037] The signal line selection circuit 16 has a plurality of selection signal lines Lsel, a plurality of output signal lines Lout, and a third switching element TrS. The plurality of third switching elements TrS are provided corresponding to the plurality of signal lines SGL, respectively. The six signal lines SGL(1), SGL(2), ..., SGL(6) are connected to a common output signal line Lout1. The six signal lines SGL(7), SGL(8), ..., SGL(12) are connected to a common output signal line Lout2. The output signal lines Lout1 and Lout2 are each connected to a detection circuit 48.

[0038] Here, the signal lines SGL(1), SGL(2), ..., SGL(6) are defined as a first signal line block, and the signal lines SGL(7), SGL(8), ..., SGL(12) are defined as a second signal line block. The multiple selection signal lines Lsel are connected to the gates of the third switching elements TrS included in one signal line block. Furthermore, one selection signal line Lsel is connected to the gates of the third switching elements TrS of multiple signal line blocks.

[0039] The control circuit 122 (see FIG. 1) sequentially supplies the selection signal ASW to the selection signal line Lsel. As a result, the signal line selection circuit 16 sequentially selects the signal lines SGL in one signal line block in a time-division manner through the operation of the third switching element TrS. The signal line selection circuit 16 also selects one signal line SGL from each of the multiple signal line blocks. With this configuration, the detection device 1 can reduce the number of ICs (Integrated Circuits) including the detection circuit 48 or the number of IC terminals. The signal line selection circuit 16 may also bundle multiple signal lines SGL and connect them to the detection circuit 48.

[0040] 3, the reset circuit 17 includes a reference signal line Lvr, a reset signal line Lrst, and a fourth switching element TrR. The fourth switching element TrR is provided corresponding to the plurality of signal lines SGL. The reference signal line Lvr is connected to one of the sources or drains of the plurality of fourth switching elements TrR. The reset signal line Lrst is connected to the gates of the plurality of fourth switching elements TrR.

[0041] The control circuit 122 supplies a reset signal RST2 to the reset signal line Lrst. This turns on the multiple fourth switching elements TrR, and the multiple signal lines SGL are electrically connected to the reference signal line Lvr. The power supply circuit 123 supplies a reference signal COM to the reference signal line Lvr. This causes the reference signal COM to be supplied to the capacitive elements Ca (see FIG. 4) included in the multiple partial detection areas PAA.

[0042] Fig. 4 is a circuit diagram showing a plurality of partial detection areas PAA. Fig. 4 also shows the circuit configuration of a detection circuit 48. As shown in Fig. 4, the partial detection area PAA includes a photodiode PD, a capacitive element Ca, and a first switching element Tr. The capacitive element Ca is a capacitance (sensor capacitance) formed in the photodiode PD, and is equivalently connected in parallel with the photodiode PD.

[0043] 4 shows two gate lines GCL(m) and GCL(m+1) aligned in the second direction Dy among the multiple gate lines GCL. Also, two signal lines SGL(n) and SGL(n+1) aligned in the first direction Dx among the multiple signal lines SGL. The partial detection area PAA is an area surrounded by the gate lines GCL and the signal lines SGL.

[0044] The first switching element Tr is provided corresponding to the photodiode PD. The first switching element Tr is configured by a thin film transistor, and in this example, is configured by an n-channel MOS (Metal Oxide Semiconductor) TFT (Thin Film Transistor).

[0045] The gates of the first switching elements Tr belonging to the partial detection areas PAA aligned in the first direction Dx are connected to the gate line GCL, the sources of the first switching elements Tr belonging to the partial detection areas PAA aligned in the second direction Dy are connected to the signal line SGL, and the drains of the first switching elements Tr are connected to the cathodes of the photodiodes PD and the capacitance elements Ca.

[0046] A sensor power supply signal VDDSNS is supplied to the anode of the photodiode PD from the power supply circuit 123. In addition, a reference signal COM, which becomes the initial potential of the signal line SGL and the capacitance element Ca, is supplied from the power supply circuit 123 to the signal line SGL and the capacitance element Ca.

[0047] When light is irradiated onto the partial detection area PAA, a current corresponding to the amount of light flows through the photodiode PD, causing charge to accumulate in the capacitance element Ca. When the first switching element Tr is turned on, a current corresponding to the charge accumulated in the capacitance element Ca flows through the signal line SGL. The signal line SGL is connected to the detection circuit 48 via the third switching element TrS of the signal line selection circuit 16. This allows the detection device 1 to detect a signal corresponding to the amount of light irradiated onto the photodiode PD for each partial detection area PAA or for each block unit PAG (see FIG. 3).

[0048] During the readout period, the switch SSW of the detection circuit 48 is turned on and connected to the signal line SGL. The detection signal amplifier 42 of the detection circuit 48 converts fluctuations in the current supplied from the signal line SGL into fluctuations in voltage and amplifies the voltage. A reference potential (Vref) having a fixed potential is input to the non-inverting input terminal (+) of the detection signal amplifier 42, and the signal line SGL is connected to the inverting input terminal (-). In this embodiment, a signal identical to the reference signal COM is input as the reference potential (Vref) voltage. The signal processor 44 (see FIG. 2) calculates the difference between the detection signal Vdet when light is irradiated and the detection signal Vdet when light is not irradiated as the sensor output voltage Vo. The detection signal amplifier 42 also has a capacitance element Cb and a reset switch RSW. During the reset period, the reset switch RSW is turned on and the charge of the capacitance element Cb is reset.

[0049] FIG. 5 is a schematic plan view of the detection device 1 according to this embodiment. Peripheral circuits such as the gate line driving circuit 15 and the signal line selection circuit 16 arranged in the peripheral area GA are not shown in FIG. 5, and the reinforcing member RM arranged in the peripheral area GA is mainly illustrated. As shown in FIG. 5, in the peripheral area GA, the reinforcing member RM is arranged on the sensor substrate 21, extending along the long sides EY1 and EY2 of the sensor substrate 21 and the short side EX1 of the sensor substrate 21. In other words, the reinforcing member RM is arranged on the sensor substrate 21 so as to surround three sides of the detection area AA. The reinforcing member RM is a laminated film of two or more layers, for example, a combination of inorganic and organic films. The detailed layer structure of the reinforcing member RM will be described later, and therefore will not be described here.

[0050] The sensor substrate 21 constituting the detection device 1 is formed from a film-like resin, such as polyimide. Therefore, the sensor substrate 21 is prone to curling. For example, when a single detection device 1 is cut from a large sheet containing many detection devices 1, the sensor substrate 21 may curl (be excessively bent). If the sensor substrate 21 curls, problems such as cracking of the inorganic insulating film constituting the sensor unit 10 due to stress caused by the curling (excessive bending) can occur. In contrast, in the detection device 1 according to this embodiment, the reinforcing member RM is arranged to surround three sides of the detection area AA. This allows for denser arrangement of components in the peripheral area GA compared to a configuration without the reinforcing member RM, thereby improving the rigidity of the detection device 1. This configuration prevents the above-mentioned curling and thus prevents the above-mentioned problems from occurring.

[0051] 5 illustrates a case in which the reinforcing member RM is arranged on the sensor substrate 21 so as to extend along the long sides EY1 and EY2 of the sensor substrate 21 and the short side EX1 of the sensor substrate 21 in the peripheral area GA, but the present invention is not limited to this, and it is sufficient that the reinforcing member RM is arranged on the sensor substrate 21 so as to extend along at least the long sides EY1 and EY2 of the sensor substrate 21 in the peripheral area GA. Even in this case, the rigidity of the detection device 1 can be sufficiently improved compared to a configuration in which the reinforcing member RM is not arranged, and therefore the occurrence of the above-mentioned problems can be suppressed.

[0052] Fig. 6 is a cross-sectional view showing the cross section of the detection device 1 taken along line AB shown in Fig. 5. Below, the configuration arranged on the detection area AA side and the configuration arranged on the peripheral area GA side will be described in order. Below, the configuration arranged on the detection area AA side will be described first.

[0053] As shown in Figure 6, on the detection area AA side, the detection device 1 has a sensor substrate 21, a first switching element Tr, an organic insulating film 94, a lower electrode 23, a first inorganic insulating film 95, a photodiode PD (only the active layer 31 is shown in Figure 6), an upper electrode 24, and a sealing film 96. The sensor substrate 21 is an insulating substrate, and is made of a film-like resin such as polyimide.

[0054] In this specification, the direction perpendicular to the surface of the sensor substrate 21, from the sensor substrate 21 to the photodiode PD, is referred to as the "upper side" or simply "upper." The direction from the photodiode PD to the sensor substrate 21 is referred to as the "lower side" or simply "lower."

[0055] An undercoat film 91 is provided on the sensor substrate 21. The undercoat film 91 has, for example, a two-layer laminated structure having insulating films 91a and 91b. The undercoat film 91 is formed of, for example, an inorganic insulating film such as a silicon nitride film or a silicon oxide film. The configuration of the undercoat film 91 is not limited to that shown in FIG. 6. For example, the undercoat film 91 may be a single-layer film or a laminate of three or more layers.

[0056] The light-shielding film 65 is provided on the insulating film 91a. The light-shielding film 65 is provided between the semiconductor layer 61 and the sensor substrate 21. The detection device 1 (photodiode PD) of this embodiment is a bottom-light-receiving optical sensor, and light reflected from the surface of a detection object such as a finger enters the photodiode PD from the bottom side of the sensor substrate 21. The light-shielding film 65 can prevent light from entering the channel region of the semiconductor layer 61 from the sensor substrate 21 side.

[0057] The first switching element Tr (transistor) is provided on the sensor substrate 21. The semiconductor layer 61 is provided on the undercoat film 91. The semiconductor layer 61 is made of, for example, polysilicon. However, the semiconductor layer 61 is not limited to this and may be made of a microcrystalline oxide semiconductor, an amorphous oxide semiconductor, low-temperature polysilicon, or the like. Although only an n-type TFT is shown as the first switching element Tr, a p-type TFT may also be formed at the same time.

[0058] The gate insulating film 92 is provided on the undercoat film 91 to cover the semiconductor layer 61. The gate insulating film 92 is an inorganic insulating film such as a silicon oxide film. The gate electrode 64 is provided on the gate insulating film 92. In the example shown in FIG. 6, the first switching element Tr has a top-gate structure. However, the first switching element Tr is not limited to this, and may have a bottom-gate structure or a dual-gate structure in which the gate electrodes 64 are provided on both the upper and lower sides of the semiconductor layer 61.

[0059] The interlayer insulating film 93 is provided on the gate insulating film 92, covering the gate electrode 64. The interlayer insulating film 93 has, for example, a stacked structure of a silicon nitride film and a silicon oxide film. The source electrode 62 and the drain electrode 63 are provided on the interlayer insulating film 93. The source electrode 62 is connected to the source region of the semiconductor layer 61 via a second contact hole CH2 provided in the gate insulating film 92 and the interlayer insulating film 93. The drain electrode 63 is connected to the drain region of the semiconductor layer 61 via a third contact hole CH3 provided in the gate insulating film 92 and the interlayer insulating film 93.

[0060] The organic insulating film 94 covers the source electrode 62 and the drain electrode 63 of the first switching element Tr and is provided on the interlayer insulating film 93. The organic insulating film 94 is an organic planarizing film, and is superior in coverage of wiring steps and surface flatness compared to inorganic insulating materials formed by CVD or the like.

[0061] The photodiode PD is provided on the organic insulating film 94. The lower electrode 23 and the first inorganic insulating film 95 are provided in a direction perpendicular to the surface of the sensor substrate 21, between the sensor substrate 21 and the organic insulating film 94 and between the photodiode PD and the sensor substrate 21 and the organic insulating film 94.

[0062] More specifically, the lower electrode 23 is provided on the organic insulating film 94 and is connected to the source electrode 62 of the first switching element Tr at the bottom surface of a first contact hole CH1 formed in the organic insulating film 94. The lower electrode 23 is a cathode electrode of the photodiode PD and is formed of a light-transmitting conductive material such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide). The plurality of lower electrodes 23 are spaced apart from each other for each partial detection area PAA (photodiode PD). The photodiode PD has a larger area than the lower electrode 23 in a plan view and covers the upper surface and outer edge side end 23e of the lower electrode 23.

[0063] The first inorganic insulating film 95 is provided on the organic insulating film 94, covering the lower electrode 23. The first inorganic insulating film 95 is made of a material such as a silicon nitride film or an aluminum oxide film. The first inorganic insulating film 95 covers the upper surface of the lower electrode 23 and has at least one opening (a first opening OP1 and a second opening OP2) in a region overlapping with the upper surface of the lower electrode 23. The photodiode PD is electrically connected to the lower electrode 23 via the first opening OP1 and the second opening OP2. The number of first openings OP1 and second openings OP2 provided in the first inorganic insulating film 95 is not limited to two. The first inorganic insulating film 95 may have at least one opening, or may have three or more openings.

[0064] The first inorganic insulating film 95 has an area larger than that of the lower electrode 23 in a plan view, and covers at least the end 23e on the outer edge side of the lower electrode 23. The first inorganic insulating film 95 is provided in a region overlapping with the photodiode PD, and is provided between the organic insulating film 94 and the photodiode PD in a region not overlapping with the lower electrode 23. This allows the first inorganic insulating film 95 to also function as a barrier film that suppresses the penetration of moisture from the organic insulating film 94 into the photodiode PD.

[0065] The first inorganic insulating film 95 is also formed inside the first contact hole CH1. The lower electrode 23 and the first inorganic insulating film 95 are laminated on the inner side surface and bottom surface of the first contact hole CH1. On the inner side surface of the first contact hole CH1, the organic insulating film 94, the lower electrode 23, and the first inorganic insulating film 95 are laminated in this order. On the bottom surface of the first contact hole CH1, the source electrode 62, the lower electrode 23, and the first inorganic insulating film 95 are laminated in this order. The first inorganic insulating film 95 is provided so as to cover the corner portion 23t of the lower electrode 23 at a position overlapping the opening edge of the first contact hole CH1.

[0066] Furthermore, the upper electrode 24 is provided on the photodiode PD. The upper electrode 24 is an anode electrode of the photodiode PD, and is formed continuously across the plurality of partial detection areas PAA (photodiodes PD). The upper electrode 24 is made of a metal material such as silver (Ag), and functions as a reflective electrode.

[0067] The sealing film 96 is provided on the upper electrode 24. The sealing film 96 is made of an inorganic film such as a silicon nitride film or an aluminum oxide film, or a resin film such as acrylic. The sealing film 96 is not limited to a single layer, but may be a laminated film of two or more layers combining the inorganic film and the resin film. The sealing film 96 effectively seals the photodiode PD and can prevent moisture from entering from the upper surface side.

[0068] Next, the configuration arranged on the peripheral area GA side will be described. As shown in FIG. 6 , the detection device 1 includes a reinforcing member RM on the peripheral area GA side. The reinforcing member RM is positioned away from the components on the detection area AA side and is not in contact with them. The reinforcing member RM is formed, for example, during the process of forming the components on the detection area AA side. The reinforcing member RM is a laminated film including a first layer 101a made of the same material as the insulating film 91a, a second layer 101b made of the same material as the insulating film 91b, a third layer 102 made of the same material as the gate insulating film 92, a fourth layer 103 made of the same material as the interlayer insulating film 93, a fifth layer 104 made of the same material as the organic insulating film 94, a sixth layer 105 made of the same material as the first inorganic insulating film 95, and a seventh layer 106 made of the same material as the sealing film 96. While the reinforcing member RM is formed during the process of forming the components on the detection area AA side, the present invention is not limited to this. The reinforcing member RM may be formed separately from the components on the detection area AA side. In this case, the reinforcing member RM may be a single layer film, or may be a laminated film of two or more layers in which an inorganic film, an organic film, or a metal film is combined. By disposing the reinforcing member RM, the rigidity of the detection device 1 can be improved, and the occurrence of the problem described with reference to FIG. 5 can be suppressed.

[0069] 6 illustrates a configuration in which one reinforcing member RM is arranged in the peripheral area GA, but is not limited to this, and multiple reinforcing members RM may be arranged in the peripheral area GA, as shown in Fig. 7. When multiple reinforcing members RM are arranged in the peripheral area GA, it is possible to further improve the rigidity of the detection device 1 compared to a configuration in which one reinforcing member RM is arranged.

[0070] As described above, the detection device 1 includes a flexible, film-like sensor substrate 21 and a plurality of photodiodes PD arranged on the sensor substrate 21. The sensor substrate 21 has a detection area AA in which the photodiodes PD are arranged and a peripheral area GA outside the detection area AA, and a reinforcing member RM extending along the periphery of the sensor substrate 21 is arranged in the peripheral area GA. This improves the rigidity of the detection device 1 and makes it possible to prevent the sensor substrate 21 from bending excessively.

[0071] 6 is applied over the entire surface of the detection device 1, and then the unnecessary portions located outside the detection area AA are wiped up (wiped off) and removed, or the unnecessary portions are removed using laser light, so that the photodiode PD is disposed only in the detection area AA. In such a removal process, if the film thickness of the unnecessary portions located outside the detection area AA is too large, it is difficult to remove the unnecessary portions, and the removal process takes a long time.

[0072] To solve this problem, the detecting device 1 may further include an insulating member M1 between the structure on the detection area AA side and the reinforcing member RM, as shown in FIG. 8 . The insulating member M1 is disposed, for example, so as to extend along the reinforcing member RM. The insulating member M1 may be a single-layer film or a laminated film of two or more layers combining inorganic and organic films. The thickness of the insulating member M1 is preferably equal to or less than that of the adjacent structure (i.e., the structure on the detection area AA side and the reinforcing member RM), and is set to, for example, 2 μm to 3 μm. This allows the thickness of unnecessary portions located outside the detection area AA to be reduced compared to when the insulating member M1 is not disposed when the photodiode PD is applied over the entire surface of the detecting device 1, thereby enabling efficient removal of the unnecessary portions. Furthermore, by disposing the insulating member M1, the reinforcing member RM and the insulating member M1 are disposed in the peripheral area GA, and therefore the rigidity of the detecting device 1 can be improved compared to when the insulating member M1 is not disposed.

[0073] 8 illustrates a configuration in which the insulating member M1 is arranged so as not to come into contact with both the configuration on the detection area AA side and the reinforcing member RM, but this is not limiting, and the insulating member M1 may be arranged so as not to come into contact with at least the configuration on the detection area AA side. Also, while FIG. 8 illustrates a configuration in which one insulating member M1 is arranged between the configuration on the detection area AA side and the reinforcing member RM, this is not limiting, and for example, as shown in FIG. 9, multiple insulating members M1 may be arranged between the configuration on the detection area AA side and the reinforcing member RM. When multiple insulating members M1 are arranged, the rigidity of the detection device 1 can be improved compared to a configuration in which one insulating member M1 is arranged.

[0074] As described above, according to one embodiment, it is possible to provide a detection device 1 (electronic device) that can prevent the sensor from being damaged by stress caused by excessive bending.

[0075] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be embodied in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, and are also included in the inventions and their equivalents as defined in the claims. [Explanation of symbols]

[0076] 1...detection device, 10...sensor portion, 21...sensor substrate, 71...flexible printed circuit board, AA...detection area, PAA...partial detection area, GA...peripheral area, RM...reinforcing member, EX1, EX2...short sides, EY1, EY2...long sides.

Claims

1. a flexible insulating substrate in the form of a film; a sensor disposed on the insulating substrate; the insulating substrate has a detection area in which the sensor is disposed and a peripheral area outside the detection area, a reinforcing member extending along an outer periphery of the insulating substrate is disposed in the peripheral region; an insulating member disposed between the detection region and the reinforcing member so as to extend along the reinforcing member; electronic equipment.

2. The insulating substrate is rectangular, The electronic device according to claim 1 , wherein the reinforcing member is disposed so as to extend along at least two long sides of the insulating base material.

3. The electronic device according to claim 2 , wherein the reinforcing member is disposed so as to extend along two long sides of the insulating substrate and one of two short sides of the insulating substrate.

4. 4. The electronic device according to claim 1, wherein the reinforcing member is made of the same material as at least one insulating film disposed in the detection region.

5. The electronic device according to claim 1 , wherein the insulating member has a thickness equal to or smaller than that of the reinforcing member.

6. 6. The electronic device according to claim 1, wherein the sensor includes a photodiode that outputs an electrical signal in response to irradiated light.

7. a flexible insulating substrate in the form of a film; a sensor disposed on the insulating substrate; the insulating substrate has a detection area in which the sensor is disposed and a peripheral area outside the detection area, a reinforcing member extending along an outer periphery of the insulating substrate is disposed in the peripheral region; the reinforcing member has a plurality of insulating films that are arranged in the same layer as the plurality of insulating films that are arranged in the detection region, No material constituting the reinforcing member is disposed between the reinforcing member and the detection area. electronic equipment.

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