Multi-process semiconductor processing system

Abstract

An exemplary substrate processing system may include multiple processing regions. The system may include a transfer region housing defining a transfer region fluidly coupled to the multiple processing regions. The system may include multiple substrate supports. Each substrate support of the multiple substrate supports may be vertically translatable between the transfer region and an associated processing region of the multiple processing regions. The system may include a transfer apparatus including a rotatable shaft extending through the transfer region housing. The transfer apparatus may also include an end effector coupled to the rotatable shaft. The system may include an exhaust foreline including multiple foreline tails. Each foreline tail of the multiple foreline tails may be fluidly coupled to a separate processing region of the multiple processing regions. The system may include multiple throttle valves.

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims priority to U.S. patent application Ser. No. 16 / 932,795, filed July 19, 2020, entitled "MULTIPLE PROCESS SEMICONDUCTOR PROCESSING SYSTEM," the entire contents of which are incorporated herein by reference.

[0002]

[0002] The present technology relates to semiconductor processes and equipment, and more particularly to semiconductor processing systems having multiple processing areas. [Background technology]

[0003]

[0003] Semiconductor processing systems often utilize cluster tools to integrate multiple process chambers. This configuration can facilitate the performance of several sequential processing steps without removing the substrate from the controlled processing environment, or can enable similar processes to be performed on multiple substrates at once in various chambers. These chambers may include, for example, degassing chambers, pre-treatment chambers, transfer chambers, chemical vapor deposition chambers, physical vapor deposition chambers, etch chambers, metrology chambers, and other chambers. The combination of chambers in the cluster tool, and the operating conditions and parameters under which these chambers operate, are selected to produce specific structures using a specific process recipe and process flow.

[0004]

[0004] Some processing systems may include multiple interconnected processing and transfer regions. Depending on the layout and configuration of the components, precursors delivered through the system may be fluidly accessible to different regions. If deposition and cleaning precursors, including plasma species of precursors, are able to access regions of the system, deposition or damage may occur within the system. Furthermore, certain layouts and flow patterns may limit the pressure differential between different processing regions, limiting the types of processes that can be performed simultaneously and making it difficult to evacuate different regions of the system.

[0005]

[0005] Therefore, there is a need for improved systems and components that can be used to efficiently flow and evacuate materials within semiconductor processing chambers and systems. These and other needs are addressed by the present technology. Summary of the Invention

[0006] An exemplary substrate processing system may include multiple processing regions. The system may include a transfer region housing defining a transfer region fluidly coupled to the multiple processing regions. The system may include multiple substrate supports. Each substrate support of the multiple substrate supports may be vertically translatable between the transfer region and an associated processing region of the multiple processing regions. The system may include a transfer apparatus including a rotatable shaft extending through the transfer region housing. The transfer apparatus may also include an end effector coupled to the rotatable shaft. The system may include an exhaust foreline including multiple foreline tails. Each foreline tail of the multiple foreline tails may be fluidly coupled to a separate processing region of the multiple processing regions. The system may include multiple throttle valves. One throttle valve of the multiple throttle valves may be incorporated into each foreline tail of the multiple foreline tails.

[0007] In some embodiments, the system may include a plurality of purge channels extending around each substrate support of the plurality of substrate supports. Each purge channel of the plurality of purge channels may extend through the transfer region housing proximate to one substrate support of the plurality of substrate supports. Each processing region of the plurality of processing regions may be at least partially defined from above by a separate lid stack. Each lid stack may include a pumping liner fluidly coupled to an exhaust of the substrate processing system. Each pumping liner may at least partially define an exhaust flow path from each processing region for purge gas supplied through the plurality of purge channels. The system may include a choking liner extending from each substrate support of the plurality of substrate supports. Each choking liner may define a plurality of apertures providing fluid communication between an associated processing region and the transfer region when the substrate support is in an elevated position for processing. The plurality of substrate supports may include at least three substrate supports distributed around the transfer region. The transfer apparatus may be centrally located between the plurality of substrate supports.

[0008] Some embodiments of the present technology may include a semiconductor processing method. The method may include delivering one or more process precursors through a plurality of lid stacks of a substrate processing system. Each lid stack of the plurality of lid stacks fluidly accesses one of the plurality of processing regions. Each of the plurality of processing regions may be at least partially defined by one of the plurality of lid stacks and one of the plurality of substrate supports. The method may include creating a pressure differential between two of the plurality of processing regions. The method may include delivering a purge gas into a transfer region of the substrate processing system through a plurality of purge channels extending through a transfer region housing that defines the transfer region. The transfer region may be fluidly coupled to each of the plurality of processing regions. The method may include evacuating the process precursors and the purge gas through a pumping liner of each lid stack of the plurality of lid stacks.

[0009] In some embodiments, the pressure difference between two of the plurality of processing regions may be about 10 Torr or greater. The substrate processing system may include a transfer apparatus positioned in the transfer region. The transfer apparatus may include a rotatable shaft extending through the transfer region housing. The end effector may be coupled to the rotatable shaft. The end effector may include a central hub defining a central aperture fluidly coupled to a purge source. The end effector may also include a plurality of arms, the number of arms being equal to the number of substrate supports in the plurality of substrate supports. The supplying may include supplying a first precursor to a first of the two processing regions of the plurality of processing regions. The method may include supplying a second precursor to a second of the two processing regions of the plurality of processing regions. The first precursor or the second precursor may be a deposition precursor.

[0010] Each substrate support of the plurality of substrate supports may also include a choking liner extending from the respective substrate support toward a transfer region of the substrate processing system. Each choking liner may define a plurality of apertures providing fluid communication between the processing region and the transfer region when the substrate support is in a raised position for processing. Purge gas may be supplied from the transfer region through the plurality of apertures defined in the choking liner. The substrate processing system may include a system foreline including a plurality of foreline tails. Each foreline tail of the plurality of foreline tails may be fluidly coupled to a separate processing region of the plurality of processing regions. The substrate processing system may include a plurality of throttle valves. One throttle valve of the plurality of throttle valves may be incorporated into each foreline tail of the plurality of foreline tails. The method may include adjusting a first throttle valve of the plurality of throttle valves separately from a second throttle valve of the plurality of throttle valves to maintain a pressure differential between two processing regions of the plurality of processing regions. The purge gas can limit or prevent one or more process precursors from entering the transfer region of the substrate processing system.

[0011] The above techniques may provide numerous advantages over conventional systems and techniques. For example, purge channels may limit or prevent process precursors from entering transport regions within the system. Furthermore, the system may facilitate the performance of different processes in different processing regions within the system. These and other embodiments, along with their many advantages and features, are described in more detail in conjunction with the following description and accompanying drawings.

[0012] A further understanding of the nature and advantages of the disclosed technology may be realized by reference to the remaining portions of the specification and the drawings. [Brief explanation of the drawings]

[0013] [Figure 1A] 1 is a schematic top view of an exemplary processing tool according to some embodiments of the present technique; [Figure 1B] 1 is a schematic partial cross-sectional view illustrating an exemplary processing system according to some embodiments of the present technique; [Figure 2] 1 is a schematic isometric view of a transfer section of an exemplary substrate processing system in accordance with some embodiments of the present technique; [Figure 3] FIG. 1 is a schematic isometric view of an exemplary exhaust system of an exemplary substrate processing system in accordance with some embodiments of the present technique. [Figure 4] FIG. 1 is a schematic partial isometric view of a purge gas supply system according to some embodiments of the present technique; [Figure 5] 1 is a schematic partial cross-sectional view of a processing system according to some embodiments of the present technique; [Figure 6] 1A-1D illustrate selected steps in a semiconductor processing method according to some embodiments of the present technique.

[0014]

[0020] Some figures are included as schematic diagrams. It should be understood that the figures are for illustrative purposes and should not be considered to scale or proportion unless the scale or proportion is explicitly stated. Furthermore, as schematic diagrams, the figures are provided to aid in understanding and may not include all aspects or information compared to realistic representations and may include exaggerated material for illustrative purposes.

[0015]

[0021] In the accompanying figures, similar components and / or features may be labeled with the same reference label. Furthermore, various components of the same type may be distinguished by following the reference label with a letter that distinguishes between the similar components. When only a first reference label is used herein, the description applies to any one of the similar components having the same first reference label, regardless of the letter. DETAILED DESCRIPTION OF THE INVENTION

[0016]

[0022] Substrate processing can include time-intensive steps to add, remove, or otherwise modify material on wafers or semiconductor substrates. Efficient movement of substrates can reduce queue times and increase substrate throughput. Additional chambers can be incorporated onto the mainframe to increase the number of substrates processed within a cluster tool. While transfer robots and processing chambers can be continually added by lengthening the tool, expanding the footprint of the cluster tool can become space-inefficient. Therefore, the present technology can include cluster tools with an increased number of processing chambers within a defined footprint. To accommodate the limited footprint around the transfer robot, the technology can increase the number of processing chambers laterally outward from the robot. For example, some conventional cluster tools may include one or two processing chambers positioned around a centrally located section of the transfer robot to maximize the number of chambers radially around the robot. The present technology can extend this concept by incorporating additional chambers laterally outward as another row or group of chambers. For example, the techniques may be applied to cluster tools that include three, four, five, six or more processing chambers each accessible at one or more robot access locations.

[0017]

[0023] However, as additional process locations are added, accessing these locations from a central robot may no longer be feasible without additional transfer capabilities at each location. Some prior art may include a wafer carrier on which the substrate remains seated during transfer. However, the wafer carrier may cause thermal non-uniformities and particle contamination on the substrate. The present technology overcomes these issues by incorporating a transfer section vertically aligned with the processing chamber region and a carousel or transfer device that can operate in conjunction with the central robot to access the additional wafer locations. The substrate support may then translate vertically between the transfer region and the processing region to deliver substrates for processing.

[0018]

[0024] When the transfer region is fluidly accessible to the processing region, process gases or plasma species can penetrate the processing region and enter the transfer region. These active precursors, which may include deposition precursors, cleaning gases, or other materials, can cause deposition or other process interactions within the transfer region, resulting in deposition or damage to components in the transfer region. The present technique can overcome these problems by providing one or more purge gases within the transfer region to help limit or prevent process precursors from entering the transfer region. Furthermore, by utilizing these purge gases, controlling their flow, and incorporating additional system components, the present technique can enable different processes to be performed within various processing regions of the system, enhancing the functionality of systems according to some embodiments of the present technique.

[0019]

[0025] While the remaining disclosure will always identify specific structures, such as a four-position transfer region, in which the structures and methods of the present invention may be employed, it will be readily understood that the substrate processing systems or components may equally be employed in any number of other systems or chambers. Thus, the present technology should not be considered limited to use with only any particular chamber. Furthermore, while an exemplary tool system is described to provide a foundation for the present technology, it will be understood that the present technology can be incorporated into any number of semiconductor processing chambers and tools that can benefit from some or all of the processes and systems described.

[0020]

[0026] 1A is a top view of one embodiment of a deposition, etch, bake, and cure chamber substrate processing tool or processing system 100 according to some embodiments of the present technology. In the figure, a set of front-opening unified pods 102 supplies substrates of various sizes, which are received into a factory interface 103 by robotic arms 104a and 104b and placed into a load lock or low-pressure holding area 106, which may be a chamber system or substrate processing system having a transfer region fluidly coupled to multiple processing regions 108, before being delivered to one of the substrate processing regions 108 positioned in quad sections 109a-c. While a quad system is illustrated, it will be understood that standalone chambers, twin chambers, and platforms incorporating other multiple chamber systems are similarly encompassed by the present technology. A second robot arm 110 housed in a transfer chamber 112 can be used to transfer substrate wafers from the holding area 106 to the quad section 109 and back, and the second robot arm 110 can be housed in a transfer chamber to which each of the quad sections or processing systems can be connected. Each substrate processing region 108 can be equipped to perform multiple substrate processing steps, including cyclical layer deposition, atomic layer deposition, chemical vapor deposition, physical vapor deposition, as well as any number of deposition processes, including etching, pre-cleaning, annealing, plasma treatment, degassing, alignment, and other substrate processes.

[0021]

[0027] Each quad section 109 may include a transfer region that can accept substrates from and deliver substrates to the second robot arm 110. The transfer region of the chamber system may be aligned with the transfer chamber having the second robot arm 110. In some embodiments, the transfer region may be laterally accessible to the robot. In subsequent steps, components of the transfer section may vertically translate the substrate to an underlying processing region 108. Similarly, the transfer region may also be operable to rotate the substrate between positions within each transfer region. The substrate processing region 108 may include any number of system components for depositing, annealing, curing, and / or etching a material film on a substrate or wafer. In one configuration, a set of two processing regions, such as the processing regions in quad sections 109a and 109b, may be used to deposit material on a substrate, and a third set of processing chambers, such as the processing chambers or region in quad section 109c, may be used to cure, anneal, or process the deposited film. In another configuration, all three sets of chambers, such as all 12 chambers shown, may be configured to both deposit and / or cure a film on a substrate.

[0022]

[0028] As shown, the second robot arm 110 may include two arms for simultaneously supplying and / or retrieving multiple substrates. For example, each quad section 109 may include two accesses 107 along a surface of the transfer region housing that may be laterally aligned to the second robot arm. The accesses may be defined along a surface adjacent to the transfer chamber 112. In some embodiments, as shown, the first access may be aligned with a first substrate support of the quad section's plurality of substrate supports. Further, the second access may be aligned with a second substrate support of the quad section's plurality of substrate supports. The first substrate support may be adjacent to the second substrate support, and the two substrate supports may define a first row of substrate supports in some embodiments. As shown in the exemplary configuration, the second row of substrate supports may be positioned behind the first row of substrate supports laterally outward from the transfer chamber 112. The two arms of the second robot arm 110 may be spaced apart so that the two arms can simultaneously enter the quad section or chamber system to deliver or retrieve one or two substrates to or from a substrate support in the transfer region.

[0023]

[0029] Any one or more of the described transfer regions may be incorporated into additional chambers separate from the illustrated fabrication system in different embodiments. It will be appreciated that additional configurations of deposition, etching, annealing, and curing chambers for material films are contemplated by processing system 100. Furthermore, any number of other processing systems that may incorporate transfer systems for performing any particular process, such as substrate movement, may be utilized with the present techniques. In some embodiments, a processing system that may provide access to multiple processing chamber regions while maintaining a vacuum environment in various sections, such as the described holding and transfer areas, may enable processes to be performed in multiple chambers while maintaining a particular vacuum environment between individual processes.

[0024]

[0030] FIG. 1B is a schematic cross-sectional elevation view illustrating one embodiment of an exemplary processing tool, such as an entire chamber system, according to some embodiments of the present technique. FIG. 1B may illustrate a cross-sectional view of any two adjacent processing regions 108 in any quad section 109. The elevation view may illustrate the configuration of one or more processing regions 108 or the fluid coupling of one or more processing regions 108 with a transfer region 120. For example, a continuous transfer region 120 may be defined by a transfer region housing 125. The housing may define an open interior volume in which multiple substrate supports 130 may be disposed. For example, as shown in FIG. 1A, an exemplary processing system may include four or more substrate supports 130 distributed within the housing around the transfer region. The substrate support may be a pedestal as shown, although numerous other configurations may also be used. In some embodiments, the pedestal may be vertically translatable between the transfer region 120 and a processing region above the transfer region. The substrate support may be vertically translatable along a central axis of the substrate support along a path between a first position and a second position within the chamber system. Thus, in some embodiments, each substrate support 130 may be axially aligned with an overlying processing region 108 defined by one or more chamber components.

[0025]

[0031] The open transfer region allows a transfer device 135, such as a carousel, to engage and move, such as by rotating, substrates between various substrate supports. The transfer device 135 may be rotatable about a central axis, which may allow a substrate to be positioned for processing in any of the processing regions 108 in the processing system. The transfer device 135 may include one or more end effectors that can engage a substrate from above, below, or by the outer edge of the substrate for movement around the substrate support. The transfer device may accept substrates from a transfer chamber robot, such as the robot 110 described above. The transfer device may then rotate the substrate to alternate substrate supports to facilitate the delivery of additional substrates.

[0026]

[0032] While positioned and awaiting processing, the transfer apparatus can position an end effector or arm between the substrate supports, allowing the substrate supports to rise above the transfer apparatus 135 and supply substrates into the processing region 108, which may be vertically offset from the transfer region. For example, as shown, substrate support 130a can supply substrates into processing region 108a, and substrate support 130b can supply substrates into processing region 108b. This can be done with the other two substrate supports and processing regions, as well as additional substrate supports and processing regions in embodiments where additional processing regions are included. In this configuration, the substrate supports can at least partially define the processing region 108 from below when operably engaged to process a substrate, such as in a second position, and the processing region can be axially aligned with the associated substrate support. The processing region can be defined from above by other lid stack components in addition to the face plate 140. In some embodiments, each processing region can have an individual lid stack component, although in some embodiments, a component can accommodate multiple processing regions 108. Based on this configuration, in some embodiments, each processing region 108 can be fluidly coupled to the transfer region while being fluidly isolated from above from each other processing region within the chamber system or quad section.

[0027]

[0033] In some embodiments, the face plate 140 can act as an electrode in the system for generating a localized plasma within the processing region 108. As shown, each processing region can utilize or incorporate a separate face plate. For example, face plate 140a can be included to define processing region 108a from above, and face plate 140b can be included to define processing region 108b from above. In some embodiments, the substrate support can act as a companion electrode for generating a capacitively coupled plasma between the face plate and the substrate support. The pumping liner 145 can at least partially define the processing region 108 radially or laterally, depending on the geometry of the volume. Again, a separate pumping liner can be utilized for each processing region. For example, pumping liner 145a can at least partially define processing region 108a radially, and pumping liner 145b can at least partially define processing region 108b radially. Blocker plate 150 may, in embodiments, be positioned between lid 155 and faceplate 140, and again, separate blocker plates may be included to facilitate fluid distribution within each processing region. For example, blocker plate 150a may be included for distribution toward processing region 108a, and blocker plate 150b may be included for distribution toward processing region 108b.

[0028]

[0034] The lid 155 may be a separate component for each processing region or may include one or more common features. In some embodiments, such as the illustrated embodiment, the lid 155 may be a single component defining multiple apertures 160 for fluid supply to the individual processing regions. For example, the lid 155 may define a first aperture 160a for fluid supply to processing region 108a, and the lid 155 may define a second aperture 160b for fluid supply to processing region 108b. Additional apertures, if included, may be defined in additional processing regions within each section. In some embodiments, each quad section 109—or a multi-processing region section that may accommodate more or fewer than four substrates—may include one or more remote plasma units 165 for supplying plasma effluents into the processing chamber. While individual plasma units may be incorporated for each chamber processing region, in some embodiments, fewer remote plasma units may be used. For example, as shown, a single remote plasma unit 165 may be used in multiple chambers, such as two, three, four, or more chambers, up to all of the chambers for a particular quad section. Plumbing may extend from the remote plasma unit 165 to each aperture 160 for delivery of plasma effluent for processing or cleaning in embodiments of the present technology.

[0029]

[0035] In some embodiments, a purge channel 170 may extend through the transfer region housing proximate or near each substrate support 130. For example, multiple purge channels may extend through the transfer region housing to provide fluid access for fluidly coupled purge gas supplied into the transfer region. The number of purge channels may be the same or different, including more or less than the number of substrate supports in the processing system. For example, a purge channel 170 may extend through the transfer region housing below each substrate support, and in some embodiments, multiple purge channels may be distributed around each substrate support. In the illustrated two substrate supports 130, a first purge channel 170a may extend through the housing proximate to substrate support 130a, and a second purge channel 170b may extend through the housing proximate to substrate support 130b. It will be understood that any additional substrate supports may similarly have plumbed purge channels extending through the transfer region housing to supply purge gas into the transfer region.

[0030]

[0036] When purge gas is supplied through one or more of the purge channels, the purge gas may also be exhausted through the pumping liner 145, which may provide an exhaust path from the processing system. As a result, in some embodiments, both the process precursor and the purge gas may be exhausted through the pumping liner. The purge gas may flow upward into the associated pumping liner; for example, purge gas flowing through purge channel 170b may be exhausted from the processing system through pumping liner 145b. As described further below, the flow of purge gas may be provided to limit the intrusion of process precursors into the transport region of the system. Furthermore, to limit the accumulation of process precursors in the central region between various processing regions, in some embodiments of the present technique, additional purge gas may be flowed through and around the transport device 135.

[0031]

[0037] As previously mentioned, processing system 100, or more specifically, a quad section or chamber system incorporated into processing system 100 or other processing systems, may include a transfer section positioned below the illustrated processing chamber region. FIG. 2 is a schematic isometric view illustrating the transfer section of an exemplary chamber system 200 according to some embodiments of the present technology. FIG. 2 may illustrate additional aspects or variations of the transfer region 120 aspects described above, which may include any of the components or features described. The illustrated system may include a transfer region housing 205 defining a transfer region that may include multiple components. The transfer region may further be at least partially defined from above by a processing chamber or region fluidly coupled to the transfer region, such as the processing chamber region 108 illustrated in quad section 109 of FIG. 1A. Sidewalls of the transfer region housing may define one or more access locations 207 where substrates may be delivered and retrieved, such as by a second robot arm 110 as described above. The access locations 207 may be slit valves or other sealable access locations, which in some embodiments include doors or other sealing mechanisms to provide a sealed environment within the transfer region housing 205. While two such access locations 207 are illustrated, it will be understood that in some embodiments only a single access location 207 may be included, and access locations on multiple sides of the transfer region housing may also be included. It will also be understood that the illustrated transfer section may be sized to accommodate any substrate size, including 200 mm, 300 mm, 450 mm, or larger or smaller substrates, and includes substrates characterized by any number of geometries or profiles.

[0032]

[0038] Within the transfer region housing 205, there may be multiple substrate supports 210 positioned around the transfer region volume. While four substrate supports are illustrated, it will be understood that any number of substrate supports is similarly encompassed by embodiments of the present technology. For example, approximately three, four, five, six, eight, or more substrate supports 210 may be housed in a transfer region according to embodiments of the present technology. The second robot arm 110 may supply substrates to either or both of the substrate supports 210a or 210b through the access 207. Similarly, the second robot arm 110 may retrieve substrates from these locations. Lift pins 212 may protrude from the substrate support 210, allowing the robot to access the substrate below. The lift pins may be fixed to the substrate support, or may be in a position where the substrate support may be recessed downward, or the lift pins may also be raised or lowered through the substrate support in some embodiments. The substrate support 210 may be vertically translatable and, in some embodiments, may extend to a processing chamber region of a substrate processing system, such as processing chamber region 108 positioned above the transfer region housing 205 .

[0033]

[0039] The transfer region housing 205 may provide access 215 for an alignment system that may extend through an aperture in the transfer region housing as shown and may include an aligner that may operate in conjunction with a laser, camera, or other monitoring device projecting or transmitting through an adjacent aperture to determine whether a substrate being translated is properly aligned. The transfer region housing 205 may also include a transfer apparatus 220 that may operate in a number of ways to position and move substrates between various substrate supports. In one example, the transfer apparatus 220 may move substrates on substrate supports 210a and 210b to substrate supports 210c and 210d, thereby allowing additional substrates to be fed into the transfer chamber. Additional transfer steps may include rotating the substrate between the substrate supports for additional processing in an overlying processing region.

[0034]

[0040] The transfer apparatus 220 may include a central hub 225, which may include one or more shafts extending into the transfer chamber. Coupled to the shafts may be an end effector 235. The end effector 235 may include multiple arms 237 extending radially or laterally outward from the central hub. While illustrated as having a central body from which the arms extend, the end effector, in various embodiments, may additionally include separate arms, each coupled to a shaft or central hub. Any number of arms may be included in embodiments of the present technology. In some embodiments, the number of arms 237 may be similar to or equal to the number of substrate supports 210 included in the chamber. Thus, as illustrated, for four substrate supports, the transfer apparatus 220 may include four arms extending from the end effector. The arms may be characterized by any number of geometries and profiles, such as linear or arcuate profiles, as well as any number of distal profiles, including hooks, rings, forks, or other designs, for supporting a substrate and / or providing access to the substrate, such as for alignment or engagement.

[0035]

[0041] As mentioned above, in some embodiments, a central purge may be included within the processing region. For example, if each of the four substrate supports 210 includes a purge channel adjacent to the stem and extending through the transfer chamber housing, the flow may not extend above the central hub 225. As a result, processing precursors that may flow in this region may accumulate and not be purged from the transfer region. To limit or prevent this effect, in some embodiments, the present technique may provide additional purge through and / or around the transfer apparatus. As described below, the flow may extend from below the end effector, and the flow may also extend through a central aperture 240 defined through the central hub. The aperture may provide fluid access into the transfer region from a shaft, such as a rotatable shaft of a transfer apparatus to which the end effector may be coupled. A purge source may be fluidly coupled to the shaft to provide a purge path through the central aperture.

[0036]

[0042] The end effector 235, or components or portions of the end effector, may be used to contact the substrate during transfer or movement. These components, as well as the end effector, may be made of or include a number of materials, including conductive and / or insulating materials. In some embodiments, the materials may be coated or plated to withstand contact with precursors or other chemicals that may enter the transfer chamber from the overlying processing chamber.

[0037]

[0043] Additionally, materials may be provided or selected to withstand other environmental characteristics, such as temperature. In some embodiments, the substrate support may be operable to heat a substrate disposed thereon. The substrate support may be configured to elevate the surface or substrate temperature to about 100°C or higher, about 200°C or higher, about 300°C or higher, about 400°C or higher, about 500°C or higher, about 600°C or higher, about 700°C or higher, about 800°C or higher, or higher. Any of these temperatures may be maintained during processing, and therefore components of the transfer apparatus 220 may be exposed to any of these temperatures as described or encompassed. Consequently, in some embodiments, any material may be selected to accommodate these temperature regimes and may include materials such as ceramics and metals, which may be characterized by relatively low coefficients of thermal expansion or other beneficial properties.

[0038]

[0044] The bond between the components can also be adapted for processing in high temperature and / or corrosive environments. For example, if the end effector and tip are each ceramic, the bond can include press fittings, snap fittings, or other fittings that may not include additional materials, such as bolts, that expand and contract with temperature and may crack the ceramic. In some embodiments, the tip can be continuous with the end effector or integrally formed therewith. Any number of other materials that can facilitate processing or provide resistance during processing can be utilized and are also encompassed by the present technology.

[0039]

[0045] FIG. 3 is a schematic isometric view illustrating an exemplary exhaust system 300 of an exemplary substrate processing system according to some embodiments of the present technique. The figure may illustrate aspects of the processing system and components described above, and may illustrate additional aspects of the system. The figure may depict a system with many components removed to facilitate easier illustration of the processing system's exhaust system. It will be understood that exhaust system 300 may include any aspect of any portion of a processing system described or illustrated elsewhere, and may depict aspects of an exhaust system incorporated into any of the systems described elsewhere. For example, exhaust system 300 may illustrate a system with some of the lid stack components described above removed. It will be understood that components may still be incorporated, such as including pumping liners at each processing position.

[0040]

[0046] As previously mentioned, processing systems according to some embodiments of the present technology may include substrate supports 305 that may be vertically translated from a transfer region 310, which may include any aspect of the chamber section 200 described above. Each substrate support 305 may extend to an associated processing region, at least partially defining the processing region from below, and a faceplate or other lid stack component may at least partially define the processing region from above. A pumping liner may at least partially define the processing region radially and may provide an exhaust path, as described above, that may supply materials to the illustrated exhaust system. Each pumping liner may provide access to a foreline tail 315, which may connect to a foreline. Each foreline tail 315 may be fluidly coupled by the foreline to a pumping system 318 configured to pump materials out of the system. As shown, each foreline tail 315 may be coupled to a separate processing region at an outer location, but in the radially exhausting pumping liner embodiments described above, the pumping line may be connected at any number of locations.

[0041]

[0047] As shown, the foreline tail 315 may be the only exhaust path from the processing system, including from the transfer region 310. Furthermore, as shown, the substrate support 305 may not be fully seated or sealed to a lid stack component, such as the lower lid plate 320, which may support individual lid stack components and at least partially define a processing region around the substrate support. The lower lid plate 320 may also define the transport region from above. As a result, each processing region may be fluidly coupled to the transport region around the substrate support. As purge gas flows from purge channels adjacent the substrate support, the gas then flows up to the pumping liner around the substrate support and through the lower lid plate before flowing through the pumping liner and into the exhaust system. In this manner, the pumping liner may define an exhaust flow path from each processing region for both process precursors, which may be supplied from above the pumping liner, and purge gas, which may be supplied from below the transfer region and pumping liner.

[0042]

[0048] If each processing region is performing a similar process, which may include supplying similar amounts of purge gas from the processing region around each substrate support, the illustrated central region may not have much flow across the region because the purge gas generally flows upward into the associated processing region and may not flow across or between the substrate supports. To limit the buildup of process materials or precursors in the transfer region, an additional purge flow may be supplied centrally within the transfer region, as described above for some embodiments of the present technique.

[0043]

[0049] As described further below, in some embodiments, systems according to the present technology can be used to perform different processes in different processing regions, and these different processes can be performed simultaneously. By flowing different precursors, such as deposition or etch precursors, multiple different processes can be performed in various regions. By utilizing a purge gas as described, mixing of these gases in the transfer region, which may generate additional deposition material or etchant, and the flow of these materials can limit or prevent interaction in the transfer region. Furthermore, the range of processes that can be performed simultaneously can be further expanded by including one or more additional components or flow controls.

[0044]

[0050] When separate processes are performed at relatively similar process pressures, the system can be balanced with similar purge flows and relatively similar exhaust speeds in the separate regions. However, the present technique can also facilitate processes that may be performed at different process pressures within the various process regions. A consideration during processes that may be performed at different pressures is that the pressures throughout the exhaust system may not be equal or similar. While multiple pumping systems may be incorporated in some embodiments, the present technique may include a throttle valve 325 in each foreline tail 315. In some embodiments of the present technique, by having independently controlled throttle valves, a single pumping system 318 can be utilized to act as an exhaust pump for each of multiple process regions. By adjusting the inlet flow rates in the separate process regions and independently operating the throttle valves, processes that are performed at different process pressures can be performed simultaneously in the different process regions.

[0045]

[0051] Different flow rates of precursors, which may be used to maintain different pressures in different processing regions, may affect the likelihood of precursor or effluent ingress into the transfer region of the processing system. Thus, in some embodiments, purge gas supply systems may be similarly separated, which may allow different purge flow rates to be directed toward different processing regions. For example, processing regions operating at higher processing pressures may be accommodated by providing increased purge gas flow supplied from the transfer region, as described above. The increased purge gas flow may act to prevent or limit the ingress of process effluents, by-products, or precursors into the transfer region.

[0046]

[0052] As previously illustrated, exhaust may flow radially outward from the processing region into a plenum formed in the pumping liner. The material may then flow out to an associated foreline tail at the edge of the pumping liner. The purge gas may also be distributed to ensure a substantially uniform radial distribution around the substrate support, thereby ensuring a more uniform effect on the processing precursors and limiting impact on the substrate being processed. FIG. 4 is a schematic, partial isometric view of a purge gas supply system 400 according to some embodiments of the present technology. The illustration may show the underside of a transfer region housing 405, which may include any of the aspects of the transfer region housing 125 described above. The illustration may show a section of the transfer region housing, which may be located in one substrate support region within the transfer region. While the illustration may show a portion of the system around one substrate support, it will be understood that components may be included with or around any substrate support or individual processing region of the system. Similar to the purge channel 170 described above, the purge channel 410 may extend around the substrate support pedestal and through the transfer region housing near the substrate support, for example radially outward of the platen portion of the substrate support.

[0047]

[0053] In some embodiments, the purge channels may be fed from a plenum 415, which may facilitate feeding multiple purge channels surrounding each substrate support. For example, a plenum may be formed around each set of purge channels around each substrate support. A purge source 420, such as an inert or non-reactive gas source, may be fluidly coupled to each plenum in some embodiments. For example, a separately controllable source may be coupled to each plenum, which may allow different purge gas flow rates to be supplied around each separate substrate support. For example, for higher pressure processing, a higher flow rate of purge gas may be supplied through the purge channels 410 to counteract increased pressure from the processing region. To further control fluid flow between the processing region and the transfer region, in some embodiments, a choking liner may be incorporated between each processing region and the transfer region.

[0048]

[0054] FIG. 5 is a schematic, partial cross-sectional view of a processing system 500 according to some embodiments of the present technology. The processing system 500 may include any feature, component, or aspect of any of the systems described above, and may illustrate additional features that may be incorporated into any system according to embodiments of the present technology. While the figure may illustrate a portion of the system around one substrate support, it will be understood that components may be included in any substrate support or individual processing region of the system. The system 500 may include a transfer region housing 505 and a lid plate 510 that may seat on the transfer region housing and define an individual processing region. These components may be the same structural components as previously described. The substrate support 515 may extend into or through the lid plate from the transfer region toward an overlying lid stack, as previously described for the processing region.

[0049]

[0055] As described above, in some embodiments, additional flow components may be incorporated into the system to further restrict intrusion of processing materials into the transfer region. For example, in some embodiments, a choking liner 520 may seat on each substrate support and extend vertically from the substrate support toward the transfer region. The choking liner may seat on the substrate support at a proximal end and extend radially outward at a distal end. The outer extension may seat against the lid plate 510 when the substrate support is raised to its operating position. The choking liner may contact the lid plate as shown to prevent additional flow between the processing region and the transfer region. As shown, the choking liner 520 may define a plurality of apertures 525 through the radially outer extension to provide fluid communication between the associated processing region and the transfer region when the choking liner is engaged against the lid plate. The apertures 525 may extend radially around the substrate support to allow uniform flow through the choking liner. The apertures may be sized to provide any amount of choke that may be based on any fluid flow or pressure in the system. For example, the apertures may be sized to about 10 mm or less, and may be about 9 mm or less, about 8 mm or less, about 7 mm or less, about 6 mm or less, about 5 mm or less, about 4 mm or less, about 3 mm or less, about 2 mm or less, about 1 mm or less, or less.

[0050]

[0056] A gap 530 may be formed between the substrate support and the lid plate to limit turbulence or other vortex formation in the purge gas flowing upward from the transfer region. The gap may span the space between the choking liner and the lid stack in a region proximal to the choking liner near the pumping liner of the lid stack. The gap 530 may be any size and may be at least equal to the diameter of the aperture 525 formed through the choking liner. In some embodiments, the gap 530 may be at least about 1.5 times the diameter of the aperture 525, at least about 2.0 times the diameter, at least about 2.5 times the diameter, at least about 3.0 times the diameter, at least about 3.5 times the diameter, at least about 4.0 times the diameter, at least about 4.5 times the diameter, at least about 5.0 times the diameter, or more. Incorporating a choking liner may more easily control different purge flows between multiple processing regions when performing different processes within the regions.

[0051]

[0057] The systems described above can be used to perform semiconductor processing, and in some embodiments, can be used to simultaneously perform multiple different processes. FIG. 6 illustrates selected steps in a method 600 of semiconductor processing according to some embodiments of the present technology. The method can be performed in a variety of processing systems, including the processing system 100 described above, and can include any of the features or components described throughout this disclosure. The method can also include performing a purging step in the transfer region of the processing system during semiconductor processing or chamber cleaning, which can limit material buildup in the transfer region, as previously described. Method 600 can include numerous optional steps that may or may not be particularly relevant to some embodiments of the method according to the present technology. For example, many of the steps are described to provide a broader range of structures and processes that can be performed, but can also be performed by alternative methodologies that are not critical to the present technology or that will be readily understood. The method can be performed in any processing chamber or system including any of the components, configurations, or aspects described above, including any aspect of the transfer apparatus or exhaust system described above. The method can also be performed in any other processing chamber that can benefit from purging according to embodiments of the present technology.

[0052]

[0058] Method 600 may include additional steps prior to the initiation of the listed steps. For example, the additional processing steps may include providing a substrate into a transfer region, rotating the substrate between substrate supports, and performing any amount of substrate processing within the processing system or any other processing chamber. The substrate support on which the substrate may sit, such as in the transfer region, may be translated to a processing region above the transfer region, as described above. In step 605, one or more processing precursors may be provided to the processing region, which may include providing to multiple processing regions through individual lid stacks, etc., as described above. As described above, each processing region may be defined at least in part by an associated lid stack, substrate support, and pumping liner through which processing and purge materials may be evacuated from the system.

[0053]

[0059] In some embodiments, different processing steps can be performed in different processing regions, as described above. For example, a first process can be performed in a first chamber or set of chambers using a first precursor or set of precursors, and a second process, different from the first, can be performed in a second chamber or set of chambers using a second precursor or set of precursors. The processes can be characterized by any number of different aspects, including any set of temperature, pressure, flow, and material conditions, which can be similar or different between regions. It will be understood that any number of different steps can be performed, and the following examples are not intended to limit the capabilities or processes encompassed by the present technology. For example, in some embodiments, the first process can include a substrate preparation step, and the second process can include a deposition step. Furthermore, in some embodiments, the first process can include a first deposition step, and the second process can include a different deposition step. Such processes can enable the formation of material stacks having multiple material layers, such as memory stacks, and can enable the formation to be performed by rotating the substrate between positions, which can dramatically reduce throughput compared to utilizing multiple chambers on a processing tool.

[0054]

[0060] Because each processing region can be heated by the substrate support, the temperature from one processing region to the next can be easily adjusted for any process. Pressure can also be adjusted between processing regions by adjusting flow rates, purge gas supplies, and exhaust line throttling using components according to embodiments of the present technology, as described above. For example, in some embodiments, a choking liner, as described above, can be incorporated into each processing region. Thus, in some embodiments, a pressure difference can be created between the two processing regions in optional step 610. For example, a first process can be performed at a first process pressure of about 20 Torr or less, about 15 Torr or less, about 10 Torr or less, about 5 Torr or less, or less. A second process performed simultaneously in an adjacent or additional processing region of the system can be performed at a similar or different process pressure. For example, the second process can be performed at a pressure of about 10 Torr or more, about 15 Torr or more, about 20 Torr or more, about 25 Torr or more, or more. The difference between the processing regions during simultaneous steps can be about 1 Torr or more, about 5 Torr or more, about 10 Torr or more, about 15 Torr or more, about 20 Torr or more, or more.

[0055]

[0061] In step 615, one or more purge gases may be supplied into the transfer region extending below each processing region. The purge gas may flow through one or more purge channels, as described above, which may be positioned proximate each substrate support, including surrounding the support, and may extend through the transfer region housing. In some embodiments, purge gas may additionally be supplied through a rotatable shaft, which may supply additional purge gas into the transfer region, such as through a central aperture defined by the central hub of the transfer apparatus. Additionally, purge gas may be supplied through a baffle at the bottom of the transfer region around the transfer apparatus shaft, or through apertures in the transfer apparatus shaft, as described above.

[0056]

[0062] The flow rates of the delivered precursors may be adjusted to provide the pressure differential described above. This may increase the diffusion potential from the processing region to the transfer region if a constant purge flow rate is provided at each station. Therefore, in some embodiments, the purge gas supply may be adjusted between stations, with higher purge gas flow rates provided at stations operating at higher pressures. Providing a variable purge gas flow rate may also limit or prevent process precursors from entering the transfer region of the substrate processing system. In step 620, one or more process precursors, process byproducts, and the purge gas delivered through the transfer region may be exhausted from the processing system. By exhausting the purge gas through a pumping liner and exhaust system, as described above, the purge gas may provide a barrier to limit or prevent process precursors from accumulating in the transfer region. Because exhaust flow may vary between regions depending on the process being performed, in some embodiments, the exhaust lines may include individual throttle valves, as described above, that can control flow to the central pumping system. To maintain the pressure differential during processing, the first throttle valve can be adjusted separately from the second throttle valve, or each throttle valve in the system can be operated in groups or individually.

[0057]

[0063] The purge gas may include any material that may be inert or non-reactive with one or more components of the system, such as nitrogen, argon, helium, hydrogen, oxygen, or any other process precursor or carrier gas that may have limited impact on the process being performed. The purge gas may be provided to provide a barrier or curtain to restrict the flow of process precursors from the processing region, so that the flow may be less than the flow of process precursors. For example, in some embodiments, the purge gas provided from each purge channel may be less than or about 90% by volume of the flow of process precursors provided through the associated lid stack. Furthermore, the purge gas provided may be less than or about 85% by volume of the flow of process precursors, such as less than or about 80%, less than or about 75%, less than or about 70%, less than or about 65%, less than or about 60%, less than or about 55%, less than or about 50%, or less.

[0058]

[0064] As previously described, purge gas supplied above and below the transfer apparatus may be provided to prevent the formation of dead zones where accumulation of processing material may occur. To limit the impact of supply on the stable flow rate to each processing region, the amount of purge gas supplied centrally may, in some embodiments, be less than the amount supplied to any individual purge channel. For example, in some embodiments, the volume of purge gas supplied centrally through and / or around the transfer apparatus may be less than or about 80% of the volume supplied from any individual purge channel proximate an individual substrate support.

[0059]

[0065] The volume of purge gas supplied around and / or through the transfer device may be based, at least in part, on the volume of the transfer region, the volume of precursor supplied through the lid stack, and any other characteristics of the process and chamber configuration. In some embodiments, the total volume of purge gas supplied through and / or around the transfer device shaft may be about 20 slm or less, about 15 slm or less, about 10 slm or less, about 5 slm or less, about 1 slm or less, about 0.5 slm or less, about 0.3 slm or less, or less. In some embodiments, the supply may be at a rate of about 3 slm or less, which may limit thermal impacts on the transfer device, although higher flow rates may be provided during higher pressure processing steps. Because the transfer device may provide a flow path for the purge gas, the flow rate of the purge gas may be controlled in some embodiments to limit cooling along the arms or any side of the transfer device. By providing a purge gas through a transfer region of a processing system that may include one or more components according to some embodiments of the present technology, the flow of process precursors may be limited or prevented from entering and / or accumulating within the transfer region, and different processing conditions may be maintained in separate processing regions during multiple substrate processing steps.

[0060]

[0066] In the foregoing specification, for purposes of explanation, numerous details have been set forth in order to provide an understanding of various embodiments of the present technology. However, it will be apparent to one skilled in the art that particular embodiments may be practiced without some of these details or with additional details.

[0061]

[0067] Although several embodiments have been disclosed, those skilled in the art will recognize that various modifications, alternative structures, and equivalents can be used without departing from the spirit of the embodiments. Moreover, to avoid unnecessarily obscuring the present technology, some well-known processes and elements have not been described. Therefore, the above specification should not be interpreted as limiting the scope of the present technology. Furthermore, while a method or process may be described sequentially or stepwise, it should be understood that steps may be performed simultaneously or in an order different from that listed.

[0062]

[0068] Where a range of values ​​is provided, it is understood that each intervening value, to the smallest fraction of the unit of the lower limit, between the upper and lower limit of that range is also specifically disclosed, unless the context clearly dictates otherwise. Any narrower range between any stated value or unstated intervening value in a stated range and any other stated or intervening value in that stated range is also included. The upper and lower limits of these smaller ranges may independently be included or excluded, and each range where one, both, or neither of the smaller ranges is included is also encompassed within the technology, subject to any specifically excluded limit in the stated range. Where a stated range includes one or both of the limits, ranges excluding either or both of those included limits are also included.

[0063]

[0069] As used in this specification and the appended claims, the singular forms "a," "an," and "the" include plural references unless the context clearly dictates otherwise. Thus, for example, a reference to "a shaft" includes a plurality of such shafts; a reference to "the aperture" includes a reference to one or more connectors and equivalents thereof known to those skilled in the art, and so forth.

[0064]

[0070] Also, as used in this specification and the claims that follow, the terms "comprise," "comprising," "contain," "containing," "include," and "including" specify the presence of stated features, integers, components, or steps, but do not exclude the presence or addition of one or more other features, integers, components, steps, practices, or groups.

Claims

1. 1. A substrate processing system, comprising: a plurality of processing regions; a transfer region housing defining a transfer region fluidly coupled to the plurality of processing regions; a plurality of substrate supports, each of the plurality of substrate supports being vertically translatable between the transfer region and an associated one of the plurality of processing regions; A transfer device comprising: a rotatable shaft extending through the transfer region housing; an end effector coupled to the rotatable shaft; a transfer device including: an exhaust foreline including a plurality of foreline tails, each foreline tail of the plurality of foreline tails fluidly coupled to a different one of the plurality of processing regions; a plurality of throttle valves, one of the plurality of throttle valves being incorporated into each of the plurality of foreline tails; A substrate processing system comprising:

2. a plurality of purge channels extending around each substrate support of the plurality of substrate supports; The substrate processing system of claim 1 , further comprising:

3. The substrate processing system of claim 2 , wherein each purge channel of the plurality of purge channels extends through the transfer region housing proximate to one substrate support of the plurality of substrate supports.

4. A substrate processing system as described in claim 2, wherein each processing area of ​​the plurality of processing areas is at least partially defined from above by a separate lid stack, and each lid stack includes a pumping liner fluidly coupled to an exhaust of the substrate processing system.

5. 5. The substrate processing system of claim 4, wherein each pumping liner at least partially defines an exhaust flow path from a respective processing region for purge gas supplied through the plurality of purge channels.

6. a choking liner extending from each substrate support of the plurality of substrate supports; The substrate processing system of claim 1 , further comprising:

7. 7. The substrate processing system of claim 6, wherein each choking liner defines a plurality of apertures that provide fluid communication between an associated processing region and the transfer region when the substrate support is in a raised position for processing.

8. The substrate processing system of claim 1 , wherein the plurality of substrate supports comprises at least three substrate supports distributed around the transfer region, and the transfer apparatus is centrally located between the plurality of substrate supports.

9. A method for processing a semiconductor, comprising: delivering one or more process precursors through a plurality of lid stacks of a substrate processing system, each lid stack of the plurality of lid stacks fluidly accessing one of a plurality of processing regions, each processing region of the plurality of processing regions being defined at least in part by one of the lid stacks of the plurality of lid stacks and one of a plurality of substrate supports; creating a pressure differential between two of the processing regions; supplying a purge gas into a transfer region of the substrate processing system through a plurality of purge channels extending through a transfer region housing defining a transfer region, the transfer region being fluidly coupled to each processing region of the plurality of processing regions; evacuating the process precursor and the purge gas through a pumping liner of each lid stack of the plurality of lid stacks; A method comprising:

10. 10. The semiconductor processing method of claim 9, wherein a pressure difference between the two processing regions of the plurality of processing regions is greater than or equal to about 10 Torr.

11. The substrate processing system includes a transfer device positioned in the transfer region, the transfer device comprising: a rotatable shaft extending through the transfer region housing; an end effector coupled to the rotatable shaft, the end effector including a central hub defining a central aperture fluidly coupled to a purge source, the end effector further including a plurality of arms having a number of arms equal to the number of substrate supports of the plurality of substrate supports; 10. The semiconductor processing method of claim 9, comprising:

12. The providing step comprises: delivering a first precursor to a first of the two processing regions of the plurality of processing regions; supplying a second precursor to a second one of the two processing regions of the plurality of processing regions; 10. The semiconductor processing method of claim 9, comprising:

13. 13. The semiconductor processing method of claim 12, wherein the first precursor or the second precursor is a deposition precursor.

14. Each substrate support of the plurality of substrate supports further comprises: a choking liner extending from each substrate support toward the transfer region of the substrate processing system; 10. The semiconductor processing method of claim 9, comprising:

15. 15. The semiconductor processing method of claim 14, wherein each choking liner defines a plurality of apertures that provide fluid communication between a processing region and a transfer region when the substrate support is in a raised position for processing.

16. A semiconductor processing method as described in claim 15, wherein the purge gas is supplied from the transfer region through the plurality of openings defined in the choking liner.

17. The substrate processing system further comprises: a system foreline including a plurality of foreline tails, each foreline tail of the plurality of foreline tails fluidly coupled to a different one of the plurality of processing regions; 10. The semiconductor processing method of claim 9, comprising:

18. The substrate processing system further comprises: a plurality of throttle valves, one of the plurality of throttle valves being incorporated into each of the plurality of foreline tails; 20. The semiconductor processing method of claim 17, comprising:

19. The method of claim 19, wherein a first throttle valve of the plurality of throttle valves is adjusted separately from a second throttle valve of the plurality of throttle valves to maintain a pressure differential between the two processing regions of the plurality of processing regions.

20. The semiconductor processing method of claim 18, further comprising:

20. 10. The semiconductor processing method of claim 9, wherein the purge gas limits or prevents the one or more process precursors from entering the transfer region of the substrate processing system.

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