Semiconductor manufacturing equipment

Abstract

To provide a semiconductor manufacturing device capable of controlling the warpage of a substrate.SOLUTION: A semiconductor manufacturing device comprises a processing container. A holding unit is provided in the processing container and holds a substrate including a first surface and a second surface located on the opposite side of the first surface from the first surface side in the processing container. The holding unit covers a first region of the first surface and includes a mask part for exposing a second region other than the first region. A gas introduction unit introduces a process gas into the processing container. A first electrode is provided between the holding unit and the gas introduction unit and supplies the process gas to the first surface of the substrate. A second electrode is provided on the second surface side of the substrate and an electric field is applied to the process gas between the first and second electrodes. A mask part includes a first layer (22_1U) in contact with the first surface of the substrate and a second layer (22_1 L) more separated from the substrate than the first layer. The first layer dents in a first direction closer to the first region than the second layer in an edge of the mask part partitioning the first region and the second region.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The present embodiment relates to a semiconductor manufacturing apparatus. [Background technology]

[0002] Semiconductor memory devices such as NAND flash memories often have a three-dimensional memory cell array in which multiple memory cells are arranged three-dimensionally. A semiconductor substrate having such a three-dimensional memory cell array may warp depending on the direction in which the word lines extend. Warping of the semiconductor substrate may affect yield and cause problems during transportation of the semiconductor substrate during the semiconductor manufacturing process. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2020-077751 [Patent Document 2] US Patent Application Publication No. 2019 / 0062918 [Patent Document 3] U.S. Patent Application Publication No. 2021 / 0301402 [Patent Document 4] U.S. Patent Application Publication No. 2021 / 0108314 [Patent Document 5] U.S. Patent Application Publication No. 2019 / 0145001 Summary of the Invention [Problem to be solved by the invention]

[0004] A semiconductor manufacturing device capable of correcting or controlling warpage of a semiconductor substrate with high precision is provided. [Means for solving the problem]

[0005] The semiconductor manufacturing apparatus according to this embodiment includes a processing vessel. The holding unit is disposed within the processing vessel and holds a substrate from the first surface side, the substrate having a first surface and a second surface opposite the first surface. The holding unit includes a mask unit that covers a first region of the first surface and exposes a second region other than the first region. The gas introduction unit introduces a process gas into the processing vessel. The first electrode is disposed between the holding unit and the gas introduction unit and supplies the process gas to the first surface of the substrate. The second electrode is disposed on the second surface side of the substrate and applies an electric field to the process gas between the first and second electrodes. The mask unit has a first layer in contact with the first surface of the substrate and a second layer that is spaced apart from the substrate by the first layer, and the first layer is recessed in a first direction toward the first region relative to the second layer at an edge of the mask unit that separates the first region from the second region. [Brief explanation of the drawings]

[0006] [Figure 1] 1 is a schematic diagram showing an example of the configuration of a semiconductor manufacturing apparatus according to a first embodiment. [Figure 2] FIG. 2 is a plan view showing an example of the configuration of a carrier ring. [Figure 3] FIG. 10 is a cross-sectional view showing an example of the configuration of a carrier ring. [Figure 4] FIG. 2 is a plan view showing an example of the configuration of a carrier ring. [Figure 5] FIG. 10 is a cross-sectional view showing an example of the configuration of a carrier ring. [Figure 6] FIG. 2 is a plan view showing an example of the configuration of a carrier ring. [Figure 7] FIG. 10 is a cross-sectional view showing an example of the configuration of a carrier ring. [Figure 8] FIG. 2 is a plan view showing an example of the configuration of a carrier ring. [Figure 9] FIG. 10 is a cross-sectional view showing an example of the configuration of a carrier ring. [Figure 10] FIG. 2 is a plan view showing an example of the configuration of a carrier ring. [Figure 11] FIG. 10 is a cross-sectional view showing an example of the configuration of a carrier ring. [Figure 12A] 1A to 1C are cross-sectional views showing a method for forming a material film using a carrier ring. [Figure 12B]1A to 1C are cross-sectional views showing a method for forming a material film using a carrier ring. [Figure 12C] 1A to 1C are cross-sectional views showing a method for forming a material film using a carrier ring. [Figure 12D] 1A to 1C are cross-sectional views showing a method for forming a material film using a carrier ring. [Figure 13A] FIG. [Figure 13B] FIG. [Figure 14] FIG. 10 is a conceptual diagram showing the relationship between the warpage of the substrate and the word lines. [Figure 15] 10 is a graph showing the amount of warpage of a substrate when a material film is formed on a first surface of the substrate. [Figure 16A] 1 is a conceptual diagram showing warpage of a substrate when a material film is formed on a first surface of the substrate. [Figure 16B] 1 is a conceptual diagram showing warpage of a substrate when a material film is formed on a first surface of the substrate. [Figure 17] FIG. 10 is a plan view showing a configuration example of a carrier ring according to a second embodiment. [Figure 18] FIG. 10 is a plan view showing a configuration example of a carrier ring according to a second embodiment. [Figure 19] FIG. 10 is a plan view showing a configuration example of a carrier ring according to a second embodiment. [Figure 20] FIG. 10 is a plan view showing a configuration example of a carrier ring according to a second embodiment. [Figure 21] FIG. 10 is a plan view showing a configuration example of a carrier ring according to a third embodiment. [Figure 22] FIG. 10 is a plan view showing a configuration example of a carrier ring according to a third embodiment. [Figure 23] FIG. 10 is a plan view showing a configuration example of a carrier ring according to a third embodiment. [Figure 24] FIG. 10 is a plan view showing a configuration example of a carrier ring according to a third embodiment. [Figure 25] FIG. 10 is a plan view showing a configuration example of a carrier ring according to a fourth embodiment. [Figure 26] FIG. 10 is a cross-sectional view showing a configuration example of a carrier ring according to a fourth embodiment. [Figure 27] FIG. 10 is a plan view showing a configuration example of a carrier ring according to a fourth embodiment. [Figure 28] FIG. 10 is a cross-sectional view showing a configuration example of a carrier ring according to a fourth embodiment. [Figure 29] FIG. 10 is a plan view showing a configuration example of a carrier ring according to a fourth embodiment. [Figure 30] FIG. 10 is a cross-sectional view showing a configuration example of a carrier ring according to a fourth embodiment. [Figure 31] FIG. 10 is a plan view showing a configuration example of a carrier ring according to a fourth embodiment. [Figure 32] FIG. 10 is a cross-sectional view showing a configuration example of a carrier ring according to a fourth embodiment. [Figure 33] FIG. 10 is a plan view showing a configuration example of a carrier ring according to a fourth embodiment. [Figure 34] FIG. 10 is a cross-sectional view showing a configuration example of a carrier ring according to a fourth embodiment. [Figure 35] FIG. 11 is a plan view showing an example of the configuration of a carrier ring according to a fifth embodiment. [Figure 36] FIG. 11 is a plan view showing an example of the configuration of a carrier ring according to a fifth embodiment. [Figure 37] FIG. 11 is a plan view showing an example of the configuration of a carrier ring according to a fifth embodiment. [Figure 38] FIG. 11 is a plan view showing an example of the configuration of a carrier ring according to a fifth embodiment. [Figure 39] FIG. 11 is a plan view showing an example of the configuration of a carrier ring according to a fifth embodiment. [Figure 40] FIG. 13 is a plan view showing a configuration example of a carrier ring according to a sixth embodiment. [Figure 41] FIG. 13 is a cross-sectional view showing a configuration example of a carrier ring according to a sixth embodiment. [Figure 42] FIG. 13 is a plan view showing a configuration example of a carrier ring according to a sixth embodiment. [Figure 43] FIG. 13 is a cross-sectional view showing a configuration example of a carrier ring according to a sixth embodiment. [Figure 44] FIG. 13 is a plan view showing a configuration example of a carrier ring according to a sixth embodiment. [Figure 45] FIG. 13 is a cross-sectional view showing a configuration example of a carrier ring according to a sixth embodiment. [Figure 46]FIG. 13 is a plan view showing a configuration example of a carrier ring according to a sixth embodiment. [Figure 47] FIG. 13 is a cross-sectional view showing a configuration example of a carrier ring according to a sixth embodiment. [Figure 48] FIG. 13 is a plan view showing a configuration example of a carrier ring according to a sixth embodiment. [Figure 49] FIG. 13 is a cross-sectional view showing a configuration example of a carrier ring according to a sixth embodiment. [Figure 50] FIG. 13 is a plan view showing a configuration example of a carrier ring according to a seventh embodiment. [Figure 51] FIG. 13 is a plan view showing a configuration example of a carrier ring according to a seventh embodiment. [Figure 52] FIG. 13 is a plan view showing a configuration example of a carrier ring according to a seventh embodiment. [Figure 53] FIG. 13 is a plan view showing a configuration example of a carrier ring according to a seventh embodiment. [Figure 54] FIG. 13 is a plan view showing a configuration example of a carrier ring according to a seventh embodiment. [Figure 55] FIG. 4 is a cross-sectional view showing the shape of the edge of the mask portion. [Figure 56] FIG. 4 is a cross-sectional view showing the shape of the edge of the mask portion. [Figure 57] FIG. 4 is a cross-sectional view showing the shape of the edge of the mask portion. [Figure 58] FIG. 4 is a cross-sectional view showing the shape of the edge of the mask portion. [Figure 59] FIG. 3 is a cross-sectional view showing the shape of the substrate mounting surface of the mask part. [Figure 60] FIG. 1 is a diagram showing an example of a semiconductor manufacturing apparatus including a buffer chamber and a transfer device. DETAILED DESCRIPTION OF THE INVENTION

[0007] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. The present invention is not limited to the embodiment. The drawings are schematic or conceptual, and the proportions of the various parts are not necessarily the same as those in reality. In the specification and drawings, elements similar to those described above with reference to the previous drawings are designated by the same reference numerals, and detailed descriptions thereof will be omitted as appropriate.

[0008] (First embodiment) 1 is a schematic diagram showing an example of the configuration of a semiconductor manufacturing apparatus 1 according to a first embodiment. The semiconductor manufacturing apparatus 1 (hereinafter also simply referred to as apparatus 1) is, for example, a CVD (Chemical Vapor Deposition) apparatus that forms a material film TF on a substrate W.

[0009] The apparatus 1 includes a chamber 10, a carrier ring 20, a gas inlet 30, a first gas distribution plate 40, a second gas distribution plate 50, a lower electrode 60, an upper electrode 80, a support 90, a controller 100, gas supply sources 110 and 130, and piping 120 and 140.

[0010] The chamber 10 is capable of accommodating a substrate W and is capable of reducing the pressure inside the chamber 10. A film formation process is performed on the substrate W inside the chamber 10. The chamber 10 is made of a heat-resistant, pressure-resistant, and corrosion-resistant material such as stainless steel.

[0011] The carrier ring 20 is a holder capable of holding the substrate W within the chamber 10. The carrier ring 20 has, for example, a circular ring shape, and supports the edge of the substrate W with a counterbore provided on its inner periphery. The center of the carrier ring 20 is open, and a material film TF can be formed on a first surface (back surface) F1 of the substrate W. Materials such as aluminum, stainless steel, and ceramics are used for the carrier ring 20. The substrate W has a first surface F1 on which the material film TF is formed and a second surface F2 opposite the first surface F1. The substrate W is, for example, a semiconductor substrate such as a silicon substrate. Semiconductor elements such as a three-dimensional memory cell array are formed on the second surface F2 of the substrate W. The first surface F1 of the substrate W is the back surface of the substrate W, and no semiconductor elements are formed on it. A more detailed configuration of the carrier ring 20 will be described later.

[0012] The gas introduction unit 30 introduces the process gas branched by the piping 120 into the chamber 10 from the first surface F1 side of the substrate W via the gas introduction pipe Gin1. The gas introduction unit 30 supplies the process gas to the first gas dispersion plate 40. The gas introduction unit 30 is made of a heat-resistant and corrosion-resistant material such as stainless steel or ceramics.

[0013] The gas inlet pipe Gin1 guides and supplies the process gases branched by the pipe 120 to the corresponding regions between the first gas dispersion plate 40 and the lower electrode 60, respectively.

[0014] The first gas dispersion plate 40 is provided between the substrate W and the gas inlet unit 30 and has a plurality of holes 40h through which the process gas passes. The holes 40h communicate with the gas inlet pipe Gin1 and the space Ga between the first gas dispersion plate 40 and the second gas dispersion plate 50, and introduce the process gas from the gas inlet pipe Gin1 into the space Ga. At this time, the plurality of holes 40h function to disperse the process gas in the space Ga. The first gas dispersion plate 40 is made of a material such as aluminum, stainless steel, or ceramics.

[0015] The second gas dispersion plate 50 is provided between the first gas dispersion plate 40 and the lower electrode 60 and has a plurality of holes 50h through which the process gas passes. The holes 50h function to disperse the process gas from the first gas dispersion plate 40 in the space Gb between the second gas dispersion plate 50 and the lower electrode 60. The second gas dispersion plate 50 is made of a material such as aluminum, stainless steel, or ceramics. The second gas dispersion plate 50 is not necessarily provided and may be omitted. In this case, the process gas introduced into the spaces Ga and Gb from the first gas dispersion plate 40 is supplied from the lower electrode 60 to the substrate W without passing through the second gas dispersion plate 50.

[0016] The lower electrode 60 is provided between the substrate W and the first and second gas distribution plates 40, 50 and has a plurality of holes 60h that supply the process gas to the first surface F1 of the substrate W. The holes 60h are arranged approximately uniformly in a matrix on the lower electrode 60. The holes 60h supply the process gas from the first and second gas distribution plates 40, 50 to the first surface F1 of the substrate W in the chamber 10. The distance between the first surface F1 of the substrate W and the lower electrode 60 is relatively narrow, and the process gas is supplied to regions of the first surface F1 of the substrate W that face the holes 60h. Note that the number of holes 40h, 50h, and 60h is preferably such that the number of holes 40h < the number of holes 50h < the number of holes 60h in order to distribute the process gas and introduce it into the chamber 10.

[0017] The lower electrode 60 is connected to a radio frequency power supply RF1 and receives power from the radio frequency power supply RF1. As a result, the lower electrode 60 is used to apply an electric field to the process gas between the substrate W and the lower electrode 60, ionizing the process gas and generating plasma. The lower electrode 60 is made of a material such as aluminum, stainless steel, or ceramics.

[0018] The upper electrode 80 is provided on the second surface F2 of the substrate W, opposite the first surface F1. The upper electrode 80 is connected to a radio frequency power supply RF2 and receives power from the radio frequency power supply RF2. The lower electrode 60 and the upper electrode 80 apply an electric field to the process gas between the substrate W and the lower electrode 60, ionizing the gas and turning it into a plasma state. As a result, a material film TF made from the process gas is deposited on the first surface F1 of the substrate W.

[0019] The upper electrode 80 is also provided with a gas inlet pipe Gin2 and a plurality of holes 80h. The gas inlet pipe Gin2 introduces an inert gas branched by the piping 140 into the chamber 10. The plurality of holes 80h are provided on the surface of the upper electrode 80 facing the second surface F2 of the substrate W, and supply the inert gas to the second surface F2 of the substrate W. During processing, the upper electrode 80 supplies the inert gas to the second surface F2 of the substrate W through the holes 80h, preventing a material film from being formed on the second surface F2 of the substrate W by the process gas. The inert gas may be, for example, helium, nitrogen, argon, or the like. The upper electrode 80 is made of a material such as aluminum, stainless steel, or ceramics.

[0020] A heater HT1 is provided below the gas inlet part 30 and the first and second gas distribution plates 40, 50. For example, the heater HT1 is provided inside the base 95 through which the gas inlet pipe Gin1 passes. In addition, a heater HT2 is provided inside the upper electrode 80. The heaters HT1 and HT2 are provided to heat the substrate W to a predetermined temperature.

[0021] The support posts 90 are provided between the base 95 and the carrier ring 20 and support the carrier ring 20 .

[0022] The controller 100 controls the gas supply sources 110 and 130 to control the flow rates and / or introduction times of the process gas and the inert gas. For example, the controller 100 controls the flow rates or introduction times of the process gas introduced into the spaces Ga and Gb. This allows the thickness of the material film TF formed on the first surface F1 of the substrate W to be varied. That is, the controller 100 can control the film thickness of the material film TF by changing the supply amounts of the process gas introduced into the spaces Ga and Gb.

[0023] A gas supply source 110 supplies a process gas to a gas inlet pipe Gin1 via a pipe 120. A gas supply source 130 supplies an inert gas to a gas inlet pipe Gin2 via a pipe 140.

[0024] The pipe 120 may be, for example, a manifold configured to be able to deliver a process gas at a desired flow rate to the gas inlet pipe Gin1, and the pipe 140 may be a manifold configured to be able to deliver an inert gas at a desired flow rate to the gas inlet pipe Gin2.

[0025] The controller 100 controls the gas supply source 110 and the piping 120 to control the flow rate and introduction time of the process gas into the gas inlet pipe Gin1. The controller 100 also controls the gas supply source 130 and the piping 140 to control the flow rate and introduction time of the inert gas into the gas inlet pipe Gin2.

[0026] The process gas and inert gas introduced into the chamber 10 are used to form the material film TF, and then exhausted from a gas exhaust port Gout.

[0027] (Career Ring 20_1) Fig. 2 is a plan view showing an example of the configuration of the carrier ring 20_1. Fig. 3 is a cross-sectional view showing an example of the configuration of the carrier ring 20_1. Fig. 3 shows a cross section taken along line 3-3 in Fig. 2.

[0028] The carrier ring 20_1, which is one of the carrier rings 20, has a substantially circular shape with a diameter equal to or larger than the diameter of the substrate W when viewed from a direction perpendicular to the first surface F1 of the substrate W (Z direction). Therefore, when the substrate W is mounted on the carrier ring 20_1, the carrier ring 20_1 overlaps the substrate W when viewed from the Z direction, and the outer edge of the lower electrode 60 is located outside the outer edge of the substrate W.

[0029] The carrier ring 20_1 includes an outer edge portion 21_1 and mask portions 22_1U and 22_1L. The outer edge portion 21_1 is provided on the outer edges of the mask portions 22_1U and 22_1L, surrounds the outer peripheries of the mask portions 22_1U and 22_1L, is formed to be thicker than the total thickness of the mask portions 22_1U and 22_1L, and protrudes toward the substrate W mounted on the carrier ring 20_1.

[0030] The mask portion 22_1U as the first layer is a countersunk portion for mounting the substrate W, and contacts and masks the first surface F1 (rear surface) of the substrate W. The mask portion 22_1U has a diameter that is approximately equal to or slightly larger than the diameter of the substrate W. As a result, the substrate W is received within the outer edge portion 21_1 and mounted on the mask portion 22_1U. The outer edge of the substrate W is located near the step between the outer edge portion 21_1 and the mask portion 22_1U.

[0031] The mask portion 22_1L as the second layer is a countersunk portion provided below the mask portion 22_1U, and does not directly contact the first surface F1 (rear surface) of the substrate W, but masks it. The mask portion 22_1L is spaced farther from the substrate W than the mask portion 22_1U. The mask portion 22_1L has a diameter that is approximately equal to or slightly larger than the diameter of the substrate W. As a result, the substrate W is received within the outer edge portion 21_1 and mounted above the mask portion 22_1L.

[0032] An opening 23_1 is provided in the center of the mask portions 22_1U and 22_1L. The opening 23_1 extends substantially linearly in the Y direction that is substantially parallel to the first surface F1 of the substrate W. The mask portions 22_1U and 22_1L cover both sides of the first surface F1 of the substrate W in the X direction, and the opening 23_1 exposes the center of the first surface F1 of the substrate W.

[0033] Between a first region on the first surface F1 of the substrate W covered with the mask portions 22_1L and 22_1U and a second region on the first surface F1 of the substrate W exposed by the opening 23_1 (at the edge portions of the mask portions 22_1L and 22_1U that separate the first and second regions), the mask portion 22_1L protrudes in the ±X and ±Y directions more than the mask portion 22_1U. That is, around the opening 23_1, the mask portion 22_1L protrudes more than the mask portion 22_1U in the extension direction of the opening 23_1 (the ±Y direction) and also protrudes in a direction approximately perpendicular to the extension direction of the opening 23_1 (the ±X direction). Therefore, as shown in FIG. 3, at the edge portions of the mask portions 22_1U and 22_1L around the opening 23_1, the mask portions 22_1U and 22_1L form a step-like shape, forming a stepped portion ST. At the step portion ST, the mask portion 22_1U is recessed in the ±Y direction and the ±X direction from the mask portion 22_1L.

[0034] Further, ends 22_1Le and 22_1Ue of mask portions 22_1L and 22_1U are provided on the inner edge of outer edge portion 21_1 at both ends of opening 23_1 in the Y direction. End 22_1Le protrudes further toward opening 23_1 than end 22_1Ue. That is, step portion ST is provided along the entire outer periphery of opening 23_1.

[0035] The carrier ring 20_1 is made of a material such as aluminum, stainless steel, or ceramics. The mask portions 22_1L and 22_1U may be formed individually and stacked, or may be integrally formed. Furthermore, the mask portions 22_1L and 22_1U and the outer edge portion 21_1 may be formed individually or may be integrally formed.

[0036] As shown in FIG. 1, the apparatus 1 supplies a process gas from a lower electrode 60 to a carrier ring 20 on the first surface F1 side of a substrate W. When a carrier ring 20_1 is used as the carrier ring 20, the first surface F1 of the substrate W is covered by the mask portions 22_1L and 22_1U of the carrier ring 20_1 and is exposed through the opening 23_1. Therefore, a material film TF is formed on the central portion of the first surface F1 of the substrate W exposed through the opening 23_1. The material film TF is not formed on the region of the first surface F1 of the substrate W covered by the mask portions 22_1L and 22_1U. Therefore, when the material film TF is formed using the carrier ring 20_1 shown in FIGS. 2 and 3, the material film TF is formed in the central portion of the first surface F1 of the substrate W corresponding to the opening 23_1.

[0037] The mask units 22_1L and 22_1U are provided with pinholes PH through which lift pins of the apparatus 1 pass. Although not shown, the lift pins are pins that pass through the pinholes PH to lift the substrate W when the substrate W is loaded onto the carrier ring 20 or when the substrate W is transported from the carrier ring 20. When the lift pins pass through the pinholes PH, the substrate W on the carrier ring 20 can be pushed up from the first surface F1 side and lifted.

[0038] (Career Ring 20_2) Fig. 4 is a plan view showing an example of the configuration of the carrier ring 20_2. Fig. 5 is a cross-sectional view showing an example of the configuration of the carrier ring 20_2. Fig. 5 shows a cross section taken along line 5-5 in Fig. 4.

[0039] When viewed from the Z direction, the carrier ring 20_2, which is one of the carrier rings 20, has a substantially circular shape with a diameter equal to or larger than the diameter of the substrate W. Therefore, when the substrate W is mounted on the carrier ring 20_2, when viewed from the Z direction, the carrier ring 20_2 overlaps with the substrate W, and the outer edge of the lower electrode 60 is located outside the outer edge of the substrate W.

[0040] The carrier ring 20_2 has an outer edge portion 21_2 and mask portions 22_2U and 22_2L. The outer edge portion 21_2 and the mask portions 22_2U and 22_2L correspond to the outer edge portion 21_1 and the mask portions 22_1U and 22_1L of the carrier ring 20_1, respectively. The configuration of the carrier ring 20_2 may basically be the same as the configuration of the carrier ring 20_1. However, the size of the opening 23_2 of the carrier ring 20_2 is different from the size of the opening 23_1 of the carrier ring 20_1.

[0041] The opening 23_2 exposes a wider area of ​​the center of the first surface F1 of the substrate W than the opening 23_1. Between a first region on the first surface F1 of the substrate W covered with the mask portions 22_2L and 22_2U and a second region on the first surface F1 of the substrate W exposed by the opening 23_2 (the edge portions of the mask portions 22_2L and 22_2U that separate the first and second regions), the mask portion 22_2L protrudes in the ±X and ±Y directions more than the mask portion 22_2U. That is, around the opening 23_2, the mask portion 22_2L protrudes more than the mask portion 22_2U in the extension direction of the opening 23_2 (the ±Y direction) and also protrudes in a direction approximately perpendicular to the extension direction of the opening 23_2 (the ±X direction). 5, the mask portions 22_2U and 22_2L have step portions ST at the edges of the mask portions 22_2U and 22_2L around the opening 23_2. That is, at the step portions ST, the mask portion 22_2U is recessed in the ±Y direction and ±X direction more than the mask portion 22_2L.

[0042] The lift pins P pass through the openings 23_2 to lift up the substrate W. Therefore, no pinholes PH are provided in the mask portions 22_2L and 22_2U. The other configurations of the carrier ring 20_2 may be similar to those of the carrier ring 20_1.

[0043] When the carrier ring 20_2 is used as the carrier ring 20, the first surface F1 of the substrate W is covered by the mask portions 22_2L and 22_2U of the carrier ring 20_2 and is exposed from the opening 23_2. Therefore, the material film TF is formed in the central portion of the first surface F1 of the substrate W exposed from the opening 23_2. The material film TF is not formed in the region of the first surface F1 of the substrate W covered by the mask portions 22_2L and 22_2U. Therefore, when the material film TF is formed using the carrier ring 20_2 shown in FIGS. 4 and 5, the material film TF is formed in the central portion of the first surface F1 of the substrate W corresponding to the opening 23_2.

[0044] (Career Ring 20_3) Fig. 6 is a plan view showing an example of the configuration of the carrier ring 20_3. Fig. 7 is a cross-sectional view showing an example of the configuration of the carrier ring 20_3. Fig. 7 shows a cross section taken along line 7-7 in Fig. 6.

[0045] When viewed from the Z direction, the carrier ring 20_3, which is one of the carrier rings 20, has a substantially circular shape with a diameter equal to or larger than the diameter of the substrate W. Therefore, when the substrate W is mounted on the carrier ring 20_3, when viewed from the Z direction, the carrier ring 20_3 overlaps with the substrate W, and the outer edge of the lower electrode 60 is located outside the outer edge of the substrate W.

[0046] The carrier ring 20_3 has an outer edge portion 21_3 and mask portions 22_3U and 22_3L. The outer edge portion 21_3 and the mask portions 22_3U and 22_3L correspond to the outer edge portion 21_1 (or 21_2) and the mask portions 22_1U and 22_1L (or 22_2U and 22_2L) of the carrier ring 20_1 (or 20_2), respectively. The configuration of the carrier ring 20_3 may basically be the same as the configuration of the carrier ring 20_1 (or 20_2). However, the size of the opening 23_3 of the carrier ring 20_3 is different from the size of the opening 23_1 (or 23_2) of the carrier ring 20_1 (or 20_2).

[0047] The opening 23_3 exposes a central portion of the first surface F1 of the substrate W more widely than the openings 23_1 and 23_2. Between a first region on the first surface F1 of the substrate W covered with the mask portions 22_3L and 22_3U and a second region on the first surface F1 of the substrate W exposed by the opening 23_3 (the edge portions of the mask portions 22_3L and 22_3U that separate the first and second regions), the mask portion 22_3L protrudes in the ±X and ±Y directions more than the mask portion 22_3U. That is, around the opening 23_3, the mask portion 22_3L protrudes in the extension direction of the opening 23_3 (the ±Y direction) more than the mask portion 22_3U, and also protrudes in a direction approximately perpendicular to the extension direction of the opening 23_3 (the ±X direction). 7, the mask portions 22_3U and 22_3L have step portions ST at the edges of the mask portions 22_3U and 22_3L around the opening 23_3. That is, at the step portions ST, the mask portion 22_3U is recessed in the ±Y direction and ±X direction more than the mask portion 22_3L.

[0048] The lift pins P pass through the openings 23_3 to lift up the substrate W. Therefore, no pinholes PH are provided in the mask portions 22_3L and 22_3U. The other configurations of the carrier ring 20_3 may be similar to those of the carrier ring 20_1 (or 20_2).

[0049] When the carrier ring 20_3 is used as the carrier ring 20, the first surface F1 of the substrate W is covered by the mask portions 22_3L and 22_3U of the carrier ring 20_3 and is exposed from the opening 23_3. Therefore, the material film TF is formed in the central portion of the first surface F1 of the substrate W exposed from the opening 23_3. The material film TF is not formed in the region of the first surface F1 of the substrate W covered by the mask portions 22_3L and 22_3U. Therefore, when the material film TF is formed using the carrier ring 20_3 shown in FIGS. 6 and 7, the material film TF is formed in the central portion of the first surface F1 of the substrate W corresponding to the opening 23_3.

[0050] (Career Ring 20_4) Fig. 8 is a plan view showing an example of the configuration of the carrier ring 20_4. Fig. 9 is a cross-sectional view showing an example of the configuration of the carrier ring 20_4. Fig. 9 shows a cross section taken along line 9-9 in Fig. 8.

[0051] The carrier ring 20_4, which is one of the carrier rings 20, has a substantially circular shape with a diameter equal to or larger than the diameter of the substrate W when viewed from a direction perpendicular to the first surface F1 of the substrate W (Z direction). Therefore, when the substrate W is mounted on the carrier ring 20_4, the carrier ring 20_4 overlaps with the substrate W when viewed from the Z direction, and the outer edge of the lower electrode 60 is located outside the outer edge of the substrate W.

[0052] The carrier ring 20_4 includes an outer edge portion 21_4 and mask portions 22_4U and 22_4L. The outer edge portion 21_4 is provided on the outer edges of the mask portions 22_4U and 22_4L, and is formed thicker than the mask portions 22_4U and 22_4L.

[0053] The mask portion 22_4U is a countersunk portion on which the substrate W is mounted, and contacts and masks the first surface F1 (rear surface) of the substrate W. The mask portion 22_4U has a diameter that is approximately equal to or slightly larger than the diameter of the substrate W, except for both ends in the X direction. This allows the substrate W to be received within the outer edge portion 21_4 and mounted on the mask portion 22_4U. The outer edge of the substrate W is located near the step between the outer edge portion 21_4 and the mask portion 22_4U.

[0054] The mask portion 22_4L is a countersunk portion provided below the mask portion 22_4U, and does not directly contact the first surface F1 (rear surface) of the substrate W, but masks it. The mask portion 22_4L has a diameter substantially equal to or slightly larger than the diameter of the substrate W, except for both ends in the X direction. As a result, the substrate W is received within the outer edge portion 21_4 and mounted above the mask portion 22_4L.

[0055] Openings 23_4a and 23_4b are provided on the outer sides of the mask portions 22_4U and 22_4L in the ±X directions. The openings 23_4a and 23_4b extend in the Y direction substantially parallel to the first surface F1 of the substrate W. The mask portions 22_4U and 22_4L cover the center of the first surface F1 of the substrate W, and the openings 23_4a and 23_4b expose both end portions of the substrate W in the ±X directions.

[0056] Between a first region on the first surface F1 of the substrate W covered with the mask portions 22_4L and 22_4U and a second region on the first surface F1 of the substrate W exposed by the openings 23_4a and 23_4b, the mask portions 22_4L protrude in the ±X directions more than the mask portions 22_4U. That is, at the edges of the mask portions 22_4L and 22_4U that separate the first region from the second region, the mask portions 22_4L protrude in a direction (±X directions) substantially perpendicular to the extension direction of the openings 23_4a and 23_4b more than the mask portions 22_4U. Therefore, as shown in FIG. 9, at both edges in the X direction of the mask portions 22_4U and 22_4L between the openings 23_4a and 23_4b, the mask portions 22_4U and 22_4L have step portions ST. At the step portion ST, the mask portion 22_4U is recessed in the ±X direction more than the mask portion 22_4L.

[0057] The mask portions 22_4L and 22_4U are provided with pinholes PH through which lift pins of the apparatus 1 pass. The lift pins are pins that pass through the pinholes PH to lift the substrate W when the substrate W is loaded onto the carrier ring 20 or when the substrate W is transported from the carrier ring 20. When the lift pins pass through the pinholes PH, the substrate W on the carrier ring 20 can be pushed up from the first surface F1 side and lifted. The other configurations of the carrier ring 20_4 may be the same as those of any of the carrier rings 20_1 to 20_3.

[0058] (Career Ring 20_5) Fig. 10 is a plan view showing an example of the configuration of the carrier ring 20_5. Fig. 11 is a cross-sectional view showing an example of the configuration of the carrier ring 20_5. Fig. 11 shows a cross section taken along line 11-11 in Fig. 10.

[0059] The carrier ring 20_5, which is one of the carrier rings 20, has a substantially circular shape with a diameter equal to or larger than the diameter of the substrate W when viewed from a direction perpendicular to the first surface F1 of the substrate W (Z direction). Therefore, when the substrate W is mounted on the carrier ring 20_5, the carrier ring 20_5 overlaps the substrate W when viewed from the Z direction, and the outer edge of the lower electrode 60 is located outside the outer edge of the substrate W.

[0060] The carrier ring 20_5 includes an outer edge portion 21_5 and mask portions 22_5U and 22_5L. The outer edge portion 21_5 is provided on the outer edges of the mask portions 22_5U and 22_5L, and is formed thicker than the mask portions 22_5U and 22_5L.

[0061] The mask portion 22_5U is a countersunk portion for mounting the substrate W, and contacts and masks the first surface F1 (rear surface) of the substrate W. The mask portion 22_5U has a diameter that is approximately equal to or slightly larger than the diameter of the substrate W. This allows the substrate W to be received within the outer edge portion 21_5 and mounted on the mask portion 22_5U. The outer edge of the substrate W is located near the step between the outer edge portion 21_5 and the mask portion 22_5U.

[0062] The mask portion 22_5L is a countersunk portion provided below the mask portion 22_5U, and does not directly contact the first surface F1 (rear surface) of the substrate W, but masks it. The mask portion 22_5L has a diameter that is approximately equal to or slightly larger than the diameter of the substrate W. As a result, the substrate W is received within the outer edge portion 21_5 and mounted above the mask portion 22_5L.

[0063] The carrier ring 20_5 has openings 23_5a and 23_5b formed in the mask portions 22_5U and 22_5L except for the central portion and both ends in the ±X directions. The openings 23_5a and 23_5b extend in the Y direction substantially parallel to the first surface F1 of the substrate W. The mask portions 22_5U and 22_5L cover the central portion and both ends in the ±X directions (first regions) of the first surface F1 of the substrate W. The openings 23_5a and 23_5b expose an intermediate portion (second region) of the substrate W other than the central portion and both ends in the ±X directions.

[0064] Between a first region on the first surface F1 of the substrate W covered with the mask portions 22_5L and 22_5U and a second region on the first surface F1 of the substrate W exposed by the openings 23_5a and 23_5b (at the edge of the mask portions 22_5L and 22_5U separating the first region from the second region), the mask portions 22_5L protrude in the ±X and ±Y directions more than the mask portion 22_5U. That is, around the openings 23_5a and 23_5b, the mask portions 22_5L protrude in the extension direction (±Y direction) of the openings 23_5a and 23_5b more than the mask portion 22_5U, and also protrude in a direction approximately perpendicular to the extension direction of the openings 23_5a and 23_5b (±X direction). 10, at the edges of the mask portions 22_5U and 22_5L around the openings 23_5a and 23_5b, the mask portions 22_5U and 22_5L have step portions ST. At the step portions ST, the mask portion 22_5U is recessed in the ±Y direction and ±X direction from the mask portion 22_5L.

[0065] The lift pins P pass through the openings 23_5a and 23_5b to lift the substrate W. Therefore, the mask portions 22_5L and 22_5U are not provided with pinholes PH. The other configuration of the carrier ring 20_5 may be the same as that of any one of the carrier rings 20_1 to 20_4.

[0066] When the carrier ring 20_5 is used as the carrier ring 20, the first surface F1 of the substrate W is covered by the mask portions 22_5L and 22_5U of the carrier ring 20_5 and is exposed from the openings 23_5a and 23_5b. Therefore, the material film TF is formed on the regions of the first surface F1 of the substrate W exposed from the openings 23_5a and 23_5b. The material film TF is not formed on the regions of the first surface F1 of the substrate W covered by the mask portions 22_5L and 22_5U. Therefore, when the material film TF is formed using the carrier ring 20_5 shown in FIGS. 10 and 11 , the material film TF is formed on the first surface F1 of the substrate W corresponding to the openings 23_5a and 23_5b.

[0067] Next, a method for forming the material film TF on the first surface F1 of the substrate W using the carrier rings 20_1 to 20_5 will be described. 12A to 12D are cross-sectional views showing a method for forming the material film TF using a carrier ring 20_5 as an example.

[0068] In the chamber 10 of the apparatus 1, the substrate W placed on the lift pins P as shown in FIG. 12A is placed on the mask portion 22_5U of the carrier ring 20_5 as shown in FIG. 12B by lowering the lift pins P.

[0069] Next, by supplying a process gas from the lower electrode 60, a material film TF is formed on the first surface F1 of the substrate W exposed through the openings 23_5a and 23_5b. At this time, the material film TF is also deposited on the back surface of the mask portion 22_5L facing the lower electrode 60 and on the inner walls of the openings 23_5a and 23_5b. On the inner walls of the openings 23_5a and 23_5b, the mask portions 22_5L and 22_5U form step portions ST. In the step portions ST, the mask portion 22_5U is recessed in the ±X directions more than the mask portion 22_5L. In addition, the thickness of the mask portion 22_5U is made thin so that the material film TF is hardly formed on the side walls of the mask portion 22_5U, as shown in FIG. 12C .

[0070] The gap between the mask portion 22_5L and the substrate W is, for example, 0.2 mm to 1.0 mm. In this case, the process gas ionized by the plasma does not enter the gap between the mask portion 22_5L and the substrate W. Therefore, the material film TF is hardly formed on the sidewall of the mask portion 22_5U.

[0071] Therefore, after the material film TF is formed, the material film TF formed on the first surface F1 of the substrate W is almost separated from the material film TF deposited on the mask portion 22_5L. As a result, as shown in FIG. 12D , when the substrate W is lifted by the lift pins P, no burrs of the material film TF are generated on the first surface F1 of the substrate W.

[0072] 13A and 13B are diagrams showing a comparative example, in which the mask portion 22 does not have a step portion ST on the inner wall of the opening portion 23. In this case, the material film TF is continuously formed over the rear surface of the mask portion 22, the inner wall of the opening portion 23, and the first surface F1 of the substrate W, as shown in FIG.

[0073] 13B, when the substrate W is lifted by the lift pins P, the edge of the material film TF on the first surface F1 of the substrate W is pulled by the material film TF remaining on the inner wall of the opening 23, causing burrs. The burrs on the material film TF can become a source of particles in subsequent processes.

[0074] In contrast, the carrier ring 20_5 according to this embodiment has step portions ST on the inner walls of the openings 23_5a and 23_5b, so that after the material film TF is formed, the material film TF on the substrate W is almost separated from the material film TF deposited on the mask portions 22_5L. As a result, when the substrate W is lifted by the lift pins P, no burrs of the material film TF are generated on the first surface F1 of the substrate W.

[0075] Here, the warpage of the substrate W will be described.

[0076] 14 is a conceptual diagram showing the relationship between the warpage of the substrate W and the word lines WL. In a three-dimensional memory cell array, the word lines WL are stacked in the Z direction and electrically separated by slits (not shown) extending in the Z direction. When the slits extend in the Y direction in a plan view seen from the Z direction, the word lines WL also extend in the Y direction as shown in FIG.

[0077] The warpage of the substrate W depends on the extension direction of the word lines WL. For example, if the extension direction of the word lines WL is the Y direction, the substrate W is recessed in the -Z direction at the center in the Y direction and rises in the +Z direction at both ends, as shown in FIG. 14. That is, the substrate W is warped in a substantially U-shape (bowl-like) in the cross section in the Y direction. Such warpage of the substrate W may cause problems in transporting the substrate W in the semiconductor manufacturing process. Furthermore, warpage of the substrate W may cause a decrease in yield. Therefore, in this embodiment, a material film TF is formed on the back surface of the substrate W to correct the warpage of the substrate W caused by the word lines WL.

[0078] FIG. 15 is a graph showing the amount of warpage of a substrate W when a material film TF is formed on the first surface F1 of the substrate W. The horizontal axis represents the thickness Ttf of the material film TF. The vertical axis represents the amount of warpage of the substrate W due to the material film TF. The amount of warpage of the substrate W represents the position of the center of the substrate W relative to the edges in the Z direction. Therefore, in this graph, the +Z direction means that the center of the substrate W protrudes more than the edges, creating a convex mountain-like shape. The -Z direction means that the center of the substrate W is recessed more than the edges, creating a concave bowl-like shape. Furthermore, FIGS. 16A and 16B are conceptual diagrams showing the warpage of a substrate W when a material film TF is formed on the first surface F1 of the substrate W.

[0079] When the material film TF is a silicon nitride film, the center of the substrate W protrudes more than the edges and warps in a mountain shape, as shown in Fig. 16A. As shown in Fig. 15, as the film thickness Ttf of the material film TF (silicon nitride film) increases, the amount of warping of the substrate W increases.

[0080] When the material film TF is a silicon oxide film, the substrate W warps in a bowl shape with its center recessed more than its edges, as shown in Fig. 16B. As shown in Fig. 15, as the film thickness Ttf of the material film TF (silicon oxide film) increases, the amount of warping of the substrate W increases.

[0081] In this embodiment, the warpage of the substrate W shown in Fig. 14 is corrected using the characteristics shown in Fig. 15, Fig. 16A, and Fig. 16B. To achieve this, a material film TF according to the state and amount of warpage of the substrate W is formed on the first surface F1 of the substrate W with film thicknesses that vary from part to part.

[0082] For example, if the substrate W is warped in a bowl shape (the center of the substrate W is closer to the lower electrode 60 than the edge of the substrate W), a silicon nitride film is formed on the first surface F1 to apply a reverse stress to the substrate W. The silicon nitride film is formed, for example, by plasma CVD using a gas containing SiH, NH, H, N, and Ar as a process gas. That is, if the warpage of the substrate W causes the center of the substrate W to be closer to the lower electrode 60 than the edge of the substrate W, the gas inlet 30 may introduce a process gas containing SiH, NH, H, N, and Ar into the chamber 10.

[0083] On the other hand, if the substrate W is warped in a mountain shape (the edge of the substrate W is closer to the lower electrode 60 than the center of the substrate W), a silicon oxide film is formed on the first surface F1 to apply an opposite stress to the substrate W. The silicon oxide film is formed, for example, by plasma CVD using a gas containing SiH4, N2O, H2, N2, and Ar as a process gas. That is, if the edge of the substrate W is closer to the lower electrode 60 than the center of the substrate W due to the warpage of the substrate W, the gas inlet 30 may introduce a process gas containing SiH4, N2O, H2, N2, and Ar into the chamber 10.

[0084] For example, in the case of a substrate W warped into a bowl shape as shown in FIG. 14, the apparatus 1 deposits a silicon nitride film as the material film TF on the first surface (back surface) F1 of the substrate W. When the silicon nitride film is deposited on the first surface F1 of the substrate W, the substrate W is subjected to stress such that it warps into a mountain shape, as opposed to a bowl shape, as shown in FIG. 16A. At this time, in order to effectively correct the bowl-shaped warpage of the substrate W in the Y direction, it is preferable that the material film TF is formed relatively thick at the center of the substrate W in the X direction in FIG. 14 so as to extend in the Y direction. Furthermore, the material film TF may be formed so as to become gradually thinner with increasing distance from the center line of the substrate W in the X direction. This allows the warpage of the substrate W to be corrected relatively strongly near the center line of the substrate W in the X direction and less so with increasing distance from the center line of the substrate W. As a result, the bowl-shaped warpage of the substrate W can be effectively corrected to approach flatness.

[0085] 2 and 3 is first placed in the chamber 10. The substrate W is mounted on the carrier ring 20_1 so that the extension direction (Y direction) of the word lines WL of the substrate W is approximately parallel to the extension direction of the openings 23_1 of FIG. 2. Next, the controller 100 introduces a process gas at a predetermined flow rate FR1 and supplies this process gas from the lower electrode 60 to the first surface F1 of the substrate W. As a result, the material film TF is formed to a predetermined thickness T1 in the center of the substrate W corresponding to the openings 23_1, and is not formed in other regions.

[0086] Next, the carrier ring 20_2 of FIGS. 4 and 5 is placed in the chamber 10. The substrate W is mounted on the carrier ring 20_2 so that the extension direction of the word lines WL of the substrate W is approximately parallel to the extension direction (Y direction) of the openings 23_2. Next, the controller 100 introduces a process gas at a predetermined flow rate FR2 and supplies this process gas from the lower electrode 60 to the first surface F1 of the substrate W. As a result, the material film TF is formed to a predetermined thickness T2 in the center of the substrate W corresponding to the openings 23_2, and is not formed in other regions. At this time, the material film TF in the region of the substrate W corresponding to the openings 23_1 has a thickness of T1 + T2.

[0087] Next, the carrier ring 20_3 of FIGS. 6 and 7 is placed in the chamber 10. The substrate W is mounted on the carrier ring 20_3 so that the extension direction of the word lines WL of the substrate W is approximately parallel to the extension direction (Y direction) of the openings 23_3. Next, the controller 100 introduces a process gas at a predetermined flow rate FR3 and supplies this process gas from the lower electrode 60 to the first surface F1 of the substrate W. As a result, the material film TF is formed to a predetermined thickness T3 in the center of the substrate W corresponding to the openings 23_3, and is not formed in other regions. At this time, the material film TF in the region of the substrate W corresponding to the opening 23_1 has a thickness of T1+T2+T3. The material film TF in the region of the substrate W corresponding to the opening 23_2 other than the opening 23_1 has a thickness of T2+T3.

[0088] Next, the carrier ring 20_4 of FIGS. 8 and 9 is placed in the chamber 10. The substrate W is mounted on the carrier ring 20_4 so that the extension direction of the word lines WL of the substrate W is approximately parallel to the extension direction (Y direction) of the openings 23_4a and 23_4b. Next, the controller 100 introduces a process gas at a predetermined flow rate FR4 and supplies this process gas from the lower electrode 60 to the first surface F1 of the substrate W. As a result, the material film TF is formed to a predetermined thickness T4 at both ends of the substrate W corresponding to the openings 23_4a and 23_4b, and is not formed in other regions. At this time, the material film TF is not formed in regions of the substrate W corresponding to the openings 23_1 to 23_3. Therefore, the thickness of the material film TF remains T1+T2+T3 in the region of the substrate W corresponding to the opening 23_1. The material film TF in the region of the substrate W corresponding to the opening 23_2 other than the opening 23_1 remains to have a thickness of T2+T3. Furthermore, the material film TF in the region of the substrate W corresponding to the opening 23_3 other than the openings 23_1 and 23_2 has a thickness of T3.

[0089] Here, if T1+T2+T3>T2+T3>T3>T4, the material film TF is thick at the center of the substrate W and becomes thinner toward both ends in the ±X directions. By forming such a material film TF on the first surface F1 of the substrate W, it is possible to accurately and effectively correct or control the warpage of the substrate W caused by the word lines WL extending in the Y direction of the substrate W.

[0090] 2 to 9, the material film TF is formed on the first surface F1 of the substrate W with a thickness that varies from part to part. That is, the apparatus 1 includes a set of four carrier rings 20_1 to 20_4, each of which has openings 23_1 to 23_4 with widths in the X direction that are different from one another.

[0091] However, the type or number of carrier rings 20 is not particularly limited, and may be 3 or less, or 5 or more. In addition, the shape of the mask portions 22 is not limited to the shapes of the mask portions 22_1U to 22_4U and 22_1L to 22_4L of the carrier rings 20_1 to 20_4. For example, the material film TF may be formed using the carrier ring 20_1 in FIGS. 2 and 3, the carrier ring 20_5 in FIGS. 10 and 11, or the carrier ring 20_4 in FIGS.

[0092] 2 and 3 is placed in the chamber 10. The substrate W is mounted on the carrier ring 20_1 so that the extension direction of the word lines WL of the substrate W is approximately parallel to the extension direction (Y direction) of the openings 23_1 in FIG. 2. Next, the controller 100 introduces a process gas at a predetermined flow rate FR1 and supplies this process gas from the lower electrode 60 to the first surface F1 of the substrate W. As a result, the material film TF is formed to a predetermined thickness T1 in the center of the substrate W corresponding to the openings 23_1, and is not formed in other regions.

[0093] Next, the carrier ring 20_5 of FIGS. 10 and 11 is placed in the chamber 10. The substrate W is mounted on the carrier ring 20_5 so that the extension direction of the word lines WL of the substrate W is approximately parallel to the extension direction (Y direction) of the openings 23_5a and 23_5b. Next, the controller 100 introduces a process gas at a predetermined flow rate FR5 and supplies this process gas from the lower electrode 60 to the first surface F1 of the substrate W. As a result, the material film TF is formed to a predetermined thickness T5 in the regions of the substrate W corresponding to the openings 23_5a and 23_5b, and is not formed in other regions. In other words, the material film TF is not formed in the center of the substrate W corresponding to the opening 23_1.

[0094] Next, the carrier ring 20_4 of FIGS. 8 and 9 is placed in the chamber 10. The substrate W is mounted on the carrier ring 20_4 so that the extension direction of the word lines WL of the substrate W is approximately parallel to the extension direction (Y direction) of the openings 23_4a and 23_4b. Next, the controller 100 introduces a process gas at a predetermined flow rate FR4 and supplies this process gas from the lower electrode 60 to the first surface F1 of the substrate W. As a result, the material film TF is formed to a predetermined thickness T4 at both ends of the substrate W corresponding to the openings 23_4a and 23_4b, and is not formed in other regions. At this time, the material film TF is not formed in regions of the substrate W corresponding to the openings 23_1, 23_5a, and 23_5b. Therefore, the thickness of the material film TF remains T1 in the region of the substrate W corresponding to the opening 23_1. The material film TF in the regions of the substrate W corresponding to the openings 23_5a and 23_5b remains at thickness T5. Furthermore, the material film TF in the region of the substrate W corresponding to the openings 23_4a and 23_4b has a thickness of T4.

[0095] If T1>T5>T4, the material film TF is thick at the center of the substrate W and becomes thinner toward both ends in the ±X directions. In this manner, by forming the material film TF on the first surface F1 of the substrate W using the three carrier rings 20_1, 20_5, and 20_4, the warpage of the substrate W due to the word lines WL extending in the Y direction of the substrate W can be corrected or controlled with high precision and effectively.

[0096] (Second embodiment) 17 to 20 are plan views showing configuration examples of carrier rings 20_1 to 20_3 and 20_5 according to the second embodiment. The carrier ring 20_4 according to the second embodiment may have the same configuration as that shown in Figs. 8 and 9. Also, cross sections taken along lines 3-3, 5-5, 7-7 and 11-11 in Figs. 17 to 20 may be the same as those shown in Figs. 3, 5, 7 and 11, respectively.

[0097] In the second embodiment, end portions 22_1Ue to 22_5Ue of mask portions 22_1U to 20_3U, 22_5U are provided on the inner edge portion of the outer edge portion 21_1 at both ends in the Y direction of the openings 23_1 to 23_3, 23_5a, 23_5b of the carrier rings 20_1 to 20_3, 20_5. However, end portions 22_1Le to 22_5Le of mask portions 22_1L to 20_3L, 22_5L are not provided so as to protrude toward the openings 23_1 to 23_3, 23_5a, 23_5b from the end portions 22_1Ue to 22_5Ue. That is, near both ends in the Y direction of the openings 23_1 to 23_3, 23_5a, 23_5b, there is no step portion ST formed by the mask portions 22_1U to 20_3U, 22_5U and the mask portions 22_1L to 20_3L, 22_5L. Note that although the ends 22_1Le to 22_5Le do not constitute step portions ST, they may be provided so as to overlap the ends 22_1Ue to 22_5Ue. Other configurations of the carrier rings 20_1 to 20_3, 20_5 of the second embodiment may be similar to those of the first embodiment.

[0098] If step portions ST are not formed near both ends in the Y direction of the openings 23_1 to 23_3, 23_5a, and 23_5b, burrs may remain in regions of the substrate W corresponding to the ends 22_1Ue to 22_5Ue when the material film TF is formed on the first surface F1 of the substrate W. However, the regions of the substrate W corresponding to the ends 22_1Ue to 22_5Ue are the outer edge of the substrate W, and the burrs of the material film TF can be removed in a bevel etching process. Therefore, even if the material film TF is formed using the carrier rings 20_1 to 20_5 according to the second embodiment, the burrs of the material film TF can be removed thereafter in a bevel etching process. As a result, the second embodiment can achieve the same effects as the first embodiment.

[0099] (Third embodiment) 21 to 24 are plan views showing configuration examples of carrier rings 20_1 to 20_3 and 20_5 according to the third embodiment. The carrier ring 20_4 according to the third embodiment may have the same configuration as that shown in Figs. 8 and 9. Also, cross sections taken along lines 3-3, 5-5, 7-7 and 11-11 in Figs. 21 to 24 may be the same as those shown in Figs. 3, 5, 7 and 11, respectively.

[0100] In the third embodiment, at both ends in the Y direction of the openings 23_1 to 23_3, 23_5a, 23_5b of the carrier rings 20_1 to 20_3, 20_5, none of the ends 22_1Ue to 22_5Ue of the mask portions 22_1U to 20_3U, 22_5U and the ends 22_1Le to 22_5Le of the mask portions 22_1L to 20_3L, 22_5L are provided on the inner edge of the outer edge portion 21_1. The other configurations of the carrier rings 20_1 to 20_3, 20_5 of the third embodiment may be similar to those of the first embodiment.

[0101] If the ends 22_1Ue-22_5Ue and 22_1Le-22_5Le are not present, when the material film TF is formed on the first surface F1 of the substrate W, the material film TF may be formed on the edge portion of the side surface of the substrate W. However, the region of the substrate W corresponding to the ends 22_1Ue-22_5Ue is the outer edge portion of the substrate W, and unnecessary material film TF can be removed in the bevel etching process. Therefore, even if the material film TF is formed using the carrier rings 20_1-20_5 according to the third embodiment, burrs on the material film TF can be removed thereafter in the bevel etching process. As a result, the third embodiment can achieve the same effects as the first embodiment.

[0102] (Fourth embodiment) Fig. 25, Fig. 27, Fig. 29, Fig. 31, and Fig. 33 are plan views showing configuration examples of carrier rings 20_1 to 20_5 according to the fourth embodiment. Fig. 26, Fig. 28, Fig. 30, Fig. 32, and Fig. 34 are cross-sectional views showing configuration examples of carrier rings 20_1 to 20_5 according to the fourth embodiment. Fig. 25 to Fig. 34 are diagrams showing configuration examples of carrier rings 20_1 to 20_5 according to the fourth embodiment.

[0103] In the fourth embodiment, the mask portions 22_1U to 22_5U are provided along the outer peripheral portions 21_1 to 21_5 of the carrier rings 20_1 to 20_5, respectively. That is, the mask portions 22_1U to 22_5U do not extend to the edges of the openings 23_1 to 23_5b, but are provided only on the inner peripheral portions of the outer peripheral portions 21_1 to 21_5. The mask portions 22_1L to 22_5L are partially provided in the region surrounded by the outer peripheral portions 21_1 to 21_5 of the carrier rings 20_1 to 20_5, and cover both ends and / or the center (first region) in the ±X directions of the first surface F1 of the substrate W. Therefore, the step portion ST constituted by the mask portions 22_1U to 22_5U and the mask portions 22_1L to 22_5L is provided along the outer peripheral portions 21_1 to 21_5. In the fourth embodiment, ends 22_1Ue to 22_5Ue of mask portions 22_1U to 22_3U and 22_5U are provided at both ends in the Y direction of the openings 23_1 to 23_3, 23_5a and 23_5b.

[0104] 31, the mask portion 22_4U is provided along the entire outer edge portion 21_4 of the carrier ring 20_4. The carrier ring 20_4 also has a plurality of openings 23_4a, 23_4b at both ends in the X direction. The mask portion 22_4L is provided in the center (first region) of the carrier ring 20_4, and the openings 23_4a, 23_4b provided on both sides of the mask portion 22_4L in the X direction expose a second region on the first surface F1 of the substrate W. Of the edges of the openings 23_4a, 23_4b, the mask portion 22_4U is provided in a portion corresponding to the outer edge portion 21_4. The mask portion 22_4L is provided on the other edges of the openings 23_4a, 23_4b. Hereinafter, in the carrier ring 20_4, the mask portions 22_4U provided on the inner edge portions of the outer edge portion 21_4 facing the openings 23_4a and 23_4b at both ends in the X direction are referred to as ends 22_4Ue. In this way, in the first region where the mask portion 22_4L covers the first surface F1 of the substrate W, the mask portion 22_4U does not extend to the edges of the openings 23_4a and 23_4b, and the ends 22_4Ue of the mask portion 22_4U are provided only on the inner edge portion of the outer edge portion 21_4. Therefore, at the inner edge portions on both sides in the Y direction of the outer edge portion 21_4 excluding both ends in the X direction where the openings 23_4a and 23_4b are provided, step portions ST constituted by the mask portions 22_4U and 22_4L are provided along the outer edge portion 21_4.

[0105] Other configurations of the carrier rings 20_1 to 20_5 of the fourth embodiment may be similar to those of the first embodiment.

[0106] In the fourth embodiment, the step portions ST are provided along the outer edge portions 21_1 to 21_5, but the distance between the substrate W and the mask portions 22_1L to 22_5L is maintained when the substrate W is mounted on the carrier rings 20_1 to 20_5. Therefore, even when the material film TF is formed using the carrier rings 20_1 to 20_5 according to the fourth embodiment, the same effects as those of the first embodiment can be obtained.

[0107] (Fifth embodiment) 35 to 39 are plan views showing configuration examples of carrier rings 20_1 to 20_5 according to the fifth embodiment. The cross sections of the carrier rings 20_1 to 20_5 according to the fifth embodiment correspond to the cross sections shown in Fig. 26, Fig. 28, Fig. 30, Fig. 32, and Fig. 34. The cross section of the carrier ring 20_4 is a cross section obtained by omitting the end portion 22_4Ue from the configuration in Fig. 32.

[0108] The fifth embodiment is a combination of the fourth and third embodiments.

[0109] In the fifth embodiment, the openings 23_1 to 23_5b of the carrier rings 20_1 to 20_5 do not have the ends 22_1Ue to 22_5Ue of the mask portions 22_1U to 22_5U at both ends in the Y direction. Other configurations of the carrier rings 20_1 to 20_3 and 20_5 of the fifth embodiment may be similar to those of the fourth embodiment.

[0110] In the carrier ring 20_4 of FIG. 38, the mask portion 22_4U is provided along a part of the outer edge portion 21_4 of the carrier ring 20_4. The mask portion 22_4Ue is not provided on the outer edge portion 21_4 facing the openings 23_4a and 23_4b. The mask portion 22_4U is provided on the outer edge portion 21_4 of the carrier ring 20_4 other than the openings 23_4a and 23_4b. The other configuration of the carrier ring 20_4 of FIG. 38 may be the same as the configuration of the carrier ring 20_4 of FIG. 31. That is, in the first region where the mask portion 22_4L covers the first surface F1 of the substrate W, the mask portion 22_4U does not extend to the edges of the openings 23_4a and 23_4b, but is provided only on the inner edge portion of the outer edge portion 21_4. Therefore, a step portion ST constituted by the mask portion 22_4U and the mask portion 22_4L is provided along the outer edge portion 21_4.

[0111] If the ends 22_1Ue to 22_5Ue are not present, when the material film TF is formed on the first surface F1 of the substrate W, the material film TF may be formed on the edge portion of the side surface of the substrate W. However, the region of the substrate W corresponding to the ends 22_1Ue to 22_5Ue is the outer edge portion of the substrate W, and unnecessary material film TF can be removed in the bevel etching process. Therefore, even if the material film TF is formed using the carrier rings 20_1 to 20_5 according to the fifth embodiment, burrs on the material film TF can be removed thereafter in the bevel etching process. As a result, the fifth embodiment can achieve the same effects as the fourth embodiment.

[0112] (Sixth embodiment) Fig. 40, Fig. 42, Fig. 44, Fig. 46, and Fig. 48 are plan views showing configuration examples of carrier rings 20_1 to 20_5 according to the sixth embodiment. Fig. 41, Fig. 43, Fig. 45, Fig. 47, and Fig. 49 are cross-sectional views showing configuration examples of carrier rings 20_1 to 20_5 according to the sixth embodiment. The carrier rings 20_1 to 20_5 according to the sixth embodiment include protrusions 25_1 to 25_5, respectively. The protrusions 25_1 to 25_5 are distributed and arranged approximately evenly on the mask portions 22_1L to 22_5L.

[0113] For example, in the carrier rings 20_1 to 20_3 in FIGS. 40 to 45, two protrusions 25_1 to 25_3 are arranged in an island shape on the mask portion 22_1L on both sides of the openings 23_1 to 23_3. The protrusions 25_1 to 25_3 are arranged approximately evenly on the central axes of the carrier rings 20_1 to 20_3 extending in the X direction, at approximately equal distances from the centers of the carrier rings 20_1 to 20_3 and the substrate W. The protrusions 25_1 to 25_3 have approximately the same height (height in the Z direction) as the mask portions 22_1U to 22_3U and are made of the same material as the mask portions 22_1U to 22_3U. Therefore, when the substrate W is placed on the carrier rings 20_1 to 20_3, the protrusions 25_1 to 25_3 support the substrate W from the first surface F1 side. This makes it possible to prevent the substrate W from coming into contact with the mask portions 22_1L to 22_3L, and to prevent burrs from being generated on the material film TF.

[0114] In the carrier ring 20_4 of FIGS. 46 and 47, three protrusions 25_4 are arranged on the mask portion 22_4L in the extension direction (Y direction) of the openings 23_4a and 23_4b. The protrusions 25_4 are arranged approximately evenly on the central axis of the carrier ring 20_4 extending in the Y direction, at the center of the carrier ring 20_4 and the substrate W and at approximately equal distances from the center. The protrusions 25_4 have approximately the same height (height in the Z direction) as the mask portion 22_4U and are made of the same material as the mask portion 22_4U. Therefore, when the substrate W is placed on the carrier ring 20_4, the protrusions 25_4 support the substrate W from the first surface F1 side. This prevents the substrate W from coming into contact with the mask portion 22_4L, thereby preventing burrs from being generated on the material film TF.

[0115] In the carrier ring 20_5 of FIGS. 48 and 49, five protrusions 25_5 are arranged on the mask portion 22_5L in the extension direction (Y direction) of the openings 23_5a and 23_5b and in the direction perpendicular to the extension direction (X direction). One protrusion 25_5 is arranged at the center of the carrier ring 20_5 and the substrate W. The four protrusions 25_5 are arranged approximately evenly on the central axis of the carrier ring 20_5 extending in the X direction and the central axis of the carrier ring 20_5 extending in the Y direction, at approximately equal distances from the center of the carrier ring 20_5 and the substrate W. The protrusions 25_5 have approximately the same height (height in the Z direction) as the mask portion 22_5U and are made of the same material as the mask portion 22_5U. Therefore, the protrusions 25_5 support the substrate W from the first surface F1 side when the substrate W is placed on the carrier ring 20_5. This makes it possible to prevent the substrate W from coming into contact with the mask portion 22_5L, and to prevent burrs from being generated on the material film TF.

[0116] Other configurations of the carrier rings 20_1 to 20_5 of the sixth embodiment may be similar to those of the fourth embodiment, so that the sixth embodiment can also obtain the effects of the fourth embodiment.

[0117] Seventh embodiment Figures 50 to 54 are plan views showing configuration examples of carrier rings 20_1 to 20_5 according to the seventh embodiment. Note that cross sections taken along lines 41-41, 43-43, 45-45, 47-47, and 49-49 in Figures 50 to 54 may be the same as the cross sections shown in Figures 41, 43, 45, 47, and 49, respectively.

[0118] The seventh embodiment is a combination of the sixth and third embodiments.

[0119] In the seventh embodiment, the openings 23_1 to 23_5b of the carrier rings 20_1 to 20_5 do not have the ends 22_1Ue to 22_5Ue of the mask portions 22_1U to 22_5U at both ends in the Y direction. Other configurations of the carrier rings 20_1 to 20_5 of the seventh embodiment may be similar to those of the sixth embodiment.

[0120] If the ends 22_1Ue to 22_5Ue are not present, when the material film TF is formed on the first surface F1 of the substrate W, the material film TF may be formed on the edge portion of the side surface of the substrate W. However, the region of the substrate W corresponding to the ends 22_1Ue to 22_5Ue is the outer edge portion of the substrate W, and unnecessary material film TF can be removed in the bevel etching process. Therefore, even if the material film TF is formed using the carrier rings 20_1 to 20_5 according to the fifth embodiment, burrs on the material film TF can be removed thereafter in the bevel etching process. As a result, the seventh embodiment can achieve the same effects as the sixth embodiment.

[0121] In the fourth to seventh embodiments, the contact area between the substrate W and the mask portions 22_1U to 22_5U is relatively small, and damage to the first surface F1 of the substrate W can be suppressed.

[0122] (Modification of the embodiment) 55 and 56 are cross-sectional views showing the shape of the edge of the mask portion 22_nL (n = 1 to 5). As shown in Fig. 55, the edge of the mask portion 22_nL may be pointed at an acute angle toward the opening 23_n. On the other hand, as shown in Fig. 56, the edge of the mask portion 22_nL may be rounded. In this case, abnormal discharge from the edge of the mask portion 22_nL is suppressed, and damage to the components of the apparatus 1, damage to the substrate W, and abnormal film formation of the material film TF can be suppressed.

[0123] 57 and 58 are cross-sectional views showing the shape of the edge of the mask portion 22_nU. As shown in FIG. 57, the edge of the mask portion 22_nU may be pointed at an acute angle toward the opening 23_n. Here, the acute tip of the mask portion 22_nU is in contact with the mask portion 22_nL. In this case, abnormal discharge from the edge of the mask portion 22_nU can be suppressed, and damage to components of the apparatus 1, damage to the substrate W, and abnormal deposition of the material film TF can be suppressed. As shown in FIG. 58, the edge of the mask portion 22_nU may be rounded. In this case, abnormal discharge from the end of the mask portion 22_nU can also be suppressed, and damage to components of the apparatus 1, damage to the substrate W, and abnormal deposition of the material film TF can be suppressed.

[0124] 59 is a cross-sectional view showing the shape of the substrate mounting surface of the mask unit 22_nU. The surface of the mask unit 22_nU on which the substrate W is mounted may be embossed to form an uneven shape. This makes it possible to suppress damage to the first surface F1 of the substrate W.

[0125] (Overall configuration of device 1 including buffer chamber and transport device) FIG. 60 shows an example of an apparatus 1 including a buffer chamber and a transfer device. Multiple carrier rings 20_n are held on shelves 16 arranged above and below a mounting table 15 in a buffer chamber 7 adjacent to a chamber 10 of the apparatus 1. A transfer chamber 8 is provided adjacent to the buffer chamber 7. The transfer device 17 holds the carrier ring 20_n used to form a material film TF on the backside of the substrate W on its arm and loads it into the chamber 10 by opening a gate valve 14 between the transfer chamber 8 and the chamber 10. By selecting an arbitrary carrier ring 20_n, the formation position of the material film TF on the substrate W can be changed. In other words, an arbitrary carrier ring 20_n can be selected and removed to form a material film TF according to the warp of the substrate W. The buffer chamber 7 and the transfer chamber 8 are kept airtight.

[0126] The controller 100 in FIG. 1 controls the transfer device 17 to remove the selected carrier ring 20_n from the buffer chamber 7 and transfer it to the chamber 10. The controller 100 transfers the carrier ring 20_n in a predetermined order by referring to a recipe stored in a storage unit (not shown). This allows the controller 100 to transfer the carrier rings 20_1 to 20_4 in order to the chamber 10, thereby forming the material film TF. Alternatively, the controller 100 can transfer the carrier rings 20_1, 20_5, and 20_4 in order to the chamber 10, thereby forming the material film TF.

[0127] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, as well as within the scope of the invention described in the claims and their equivalents. [Explanation of symbols]

[0128] 1 semiconductor manufacturing equipment, 10 chamber, 20_1 to 20_5 carrier ring, 21_1 to 21_5 outer edge portion, 22_1L to 22_5L, 22_1U to 22_5U mask portion, 23_1 to 23_5 opening, PH pinhole, 30 gas inlet portion, 40, 50 gas distribution plate, 60 lower electrode, 80 upper electrode, 90 support, 100 control portion, 110, 130 gas supply source, 120, 140 piping

Claims

1. A processing vessel; a holder provided in the processing chamber and configured to hold a substrate having a first surface and a second surface opposite to the first surface from the first surface side, the holder including a mask portion that covers a first region of the first surface and exposes a second region other than the first region; a gas inlet for introducing a process gas into the processing chamber; a first electrode provided between the holder and the gas inlet, the first electrode supplying the process gas to the first surface of the substrate; a second electrode provided on the second surface side of the substrate, the second electrode applying an electric field to the process gas between the first and second electrodes; the mask portion has a first layer in contact with the first surface of the substrate and a second layer spaced apart from the substrate by the first layer, and the first layer is recessed in a direction toward the first region relative to the second layer at an edge of the mask portion that separates the first region from the second region; the holding portion is provided in the mask portion in correspondence with the second region, and has an opening whose longitudinal direction is in the first direction; the first layer and the second layer of the mask portion form steps on outer peripheries on both sides of the opening in a second direction that is substantially perpendicular to the first direction, The step extends in the first direction.

2. A processing vessel; a holder provided in the processing chamber and configured to hold a substrate having a first surface and a second surface opposite to the first surface from the first surface side, the holder including a mask portion that covers a first region of the first surface and exposes a second region other than the first region; a gas inlet for introducing a process gas into the processing chamber; a first electrode provided between the holder and the gas inlet, the first electrode supplying the process gas to the first surface of the substrate; a second electrode provided on the second surface side of the substrate, the second electrode applying an electric field to the process gas between the first and second electrodes; the mask portion has a first layer in contact with the first surface of the substrate and a second layer spaced apart from the substrate by the first layer; the first layer is provided along at least a portion of an outer edge of the holding portion; the second layer is partially provided in a region surrounded by the outer edge of the holding portion so as to correspond to the first region; The mask portion further comprises a plurality of protrusions arranged approximately evenly on the second layer at approximately equal distances from the center of the holder and having approximately the same height as the first layer.

3. 3. The semiconductor manufacturing apparatus according to claim 2, wherein the first layer and the second layer form a step.

4. A plurality of the holding portions are provided, 3. The semiconductor manufacturing apparatus according to claim 1, wherein the mask portions of the plurality of holders cover different first regions and expose different second regions.

5. the plurality of holding portions are provided on the mask portion in correspondence with the second regions, and have openings whose longitudinal direction is in the first direction; The semiconductor manufacturing apparatus according to claim 4 , wherein the openings of the plurality of holding portions have different widths in a second direction substantially perpendicular to the first direction.

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