quantum entanglement device

Abstract

This quantum entanglement device comprises: an IV semiconductor (S, S1, S2); and a scissor-type quantum entanglement element (SQE) formed of at least one atom from the surface of the IV semiconductor (S, S1, S2) and two hydrogen atoms or two deuterium atoms bonded to the terminus of said atom.

Description

[Technical Field]

[0001] The present invention relates to a quantum entanglement device, a quantum entanglement photon pair generating device using the same, a quantum entanglement photon pair laser device, a quantum computer, a quantum communication device, and a quantum cryptography device. [Background technology]

[0002] In quantum computers, quantum information technology, quantum cryptography, quantum teleportation, and other quantum communication technologies, quantum entanglement devices are used to construct quantum entanglement photon pair generators and quantum bit devices.

[0003] A quantum entangled state is a state that appears when multiple particles or states have a quantum mechanical correlation. Known systems in which a quantum entangled state appears include those that utilize the circular polarization state of photons with spin 1, those that utilize the spin states of electrons and atoms with spin 1 / 2, and those that utilize the ortho and para states of hydrogen molecules (see Non-Patent Document 1). Thus, to realize a quantum entangled state, stable spin control operations of particles or quantum states are required.

[0004] Conventional quantum entanglement devices utilize laser cooling methods 40 Ca atoms are electrically trapped at a certain point in space by applying a high frequency voltage, i.e., Paul trap, and cooled to the limit. 40 It utilizes the three-level structure of Ca atoms to generate entangled photon pairs with wavelengths of 551 nm and 423 nm (see Non-Patent Documents 2, 3, 4, 5).

[0005] Figure 17 shows the conventional 40 1A and 1B are diagrams for explaining the principle of generating quantum entangled photon pairs consisting of Ca atoms, in which (A) is an energy level diagram and (B) is a diagram showing cascade transitions.

[0006] As shown in Figure 17(A), 40Ca has a three-level structure consisting of the singlet ground level E0, the triplet intermediate level E1, and the singlet excited level E2. As a result, the singlet ground level E0 and the singlet excited level E2 have the same total angular momentum J=0 and spin angular momentum m=0, so that the electron excited to the singlet excited level E2 40 In the triplet intermediate level E1 state, Ca undergoes a cascade transition |R 21 >,|R 10 > and cascade transition |L due to left-handed polarization 21 >,|L 10 > occurs, and a quantum entangled photon pair is generated, which is described by the quantum state |Ψ> of the number 1, in which it is quantum mechanically impossible to distinguish which transition occurs.

number

[0007] [Non-Patent Document 1] DM Dennison, A note on the specific heat of the hydrogen molecule, Proc. R. Soc. London, Ser. A 115, 483 (1927). [Non-patent document 2] R. Horodecki, P. Horodecki, M. Horodecki, and K. Horodecki, Rev. Mod. Phys. 81, 865 (2009). [Non-patent document 3] J. Audretsch, Entangled Systems: New Directions in Quantum Physics (Whiley-VCH, Weinheim, 2007). [Non-patent document 4] DF Walls and GJ Milburn, Quantum Optics (Springer, Berlin, 1994). [Non-Patent Document 5] Keiichi Edamatsu, "Single Photons and Entangled Photons", Kyoritsu Shuppan, pp.127-128, 2018. Summary of the Invention [Problem to be solved by the invention]

[0008] However, in the conventional quantum entanglement device shown in Figure 17 above, 40 To achieve stable spin control by electrically trapping Ca atoms at a certain point in space by applying a high frequency voltage using laser cooling, i.e., Paul trapping, and cooling them to the limit, a precisely frequency-controlled laser light source and an ultra-high vacuum device are required, which makes the manufacturing cost very high and requires many laborious processes. 40 The problem is that it is difficult to arrange the Ca atoms at the desired positions.

[0009] Furthermore, in the conventional quantum entanglement device shown in Figure 17 above, the wavelength of the light generated is in the visible light region, which is shorter than the near-infrared (wavelength 1 μm), which presents the problem that it is unsuitable as a light source for quantum information control or communication, where confidentiality is important. [Means for solving the problem]

[0010] In order to solve the above-mentioned problems, the quantum entanglement device according to the present invention comprises a group IV semiconductor and a scissors-type quantum entanglement element consisting of at least one atom on the surface of the group IV semiconductor and two hydrogen atoms or two deuterium atoms bonded to the terminals of the atom. The surface of the group IV semiconductor is a (100) plane, and strain is introduced into the group IV semiconductor to separate the degenerate energy levels of the scissors-type quantum entanglement device. At least one atom on the surface of a group IV semiconductor and two hydrogen atoms or two deuterium atoms bonded to the terminals of that atom have normal vibrations described by a harmonic oscillator, and the spin state is a symmetric spin state or an antisymmetric spin state according to the parity or oddness indicated by the harmonic oscillator.

[0011] In addition, the quantum entangled photon pair generating device of the present invention comprises the above-mentioned quantum entanglement device and a pump light source for exciting the scissors-type quantum entanglement element, so that the photon pairs generated from the scissors-type quantum entanglement element are put into a quantum entangled state.

[0012] Furthermore, the quantum entangled photon pair generating laser device according to the present invention comprises a group IV semiconductor, a plurality of scissors-type quantum bit elements each consisting of a plurality of atoms on the surface of the group IV semiconductor and two hydrogen atoms or two deuterium atoms bonded to the end of each atom, and a pump light source for exciting the plurality of scissors-type quantum entanglement elements as a whole; The surface of the group IV semiconductor is a (100) plane, and strain is introduced into the group IV semiconductor to separate the degenerate energy levels of the scissors-type quantum entanglement device. A plurality of scissors-type quantum entanglement devices are arranged in close proximity to each other, and photon pairs generated from the scissors-type quantum entanglement devices are stimulated to emit.

[0013] Furthermore, the quantum computer according to the present invention comprises a group IV semiconductor and a plurality of scissors-type quantum entanglement elements each consisting of a plurality of atoms on the surface of the group IV semiconductor and two hydrogen atoms or two deuterium atoms bonded to the terminals of each atom, The surface of the group IV semiconductor is a (100) plane, and strain is introduced into the group IV semiconductor to separate the degenerate energy levels of the scissors-type quantum entanglement device. This is a system in which unitary operations are performed between multiple scissors-type quantum entanglement devices.

[0014] Furthermore, the quantum communication device and quantum cryptography device according to the present invention comprise a group IV semiconductor and a plurality of scissors-type quantum entanglement elements each consisting of a plurality of atoms on the surface of the group IV semiconductor and two hydrogen atoms or two deuterium atoms bonded to the end of each atom, The surface of the group IV semiconductor is a (100) plane, and strain is introduced into the group IV semiconductor to separate the degenerate energy levels of the scissors-type quantum entanglement device. This involves performing Bell measurements between multiple scissors-type quantum entanglement devices to cause quantum teleportation or quantum entanglement swapping. [Effects of the Invention]

[0015] According to the present invention, quantum entanglement formed in a scissors-type quantum entanglement device is utilized. Hydrogen termination of group IV semiconductors and their surfaces can be performed using standard semiconductor manufacturing processes, reducing manufacturing costs. The present invention can also be applied to light sources for quantum information control and communication. [Brief explanation of the drawings]

[0016] [Figure 1] 1 is an atomic arrangement diagram showing an embodiment of a quantum entanglement device according to the present invention. [Figure 2] 2 is an atomic arrangement diagram for explaining a first method for manufacturing the quantum entanglement device of FIG. 1. FIG. [Figure 3] This figure explains the spherical nano-single crystal silicon in Figure 2, where (A) is a transmission electron microscope photograph of an aggregate of spherical nano-single crystal silicon, (B) is the small-angle X-ray scattering spectrum of the spherical nano-single crystal silicon analyzed by a small-angle X-ray scattering measurement device, and (C) is a graph showing the radial size distribution of the spherical nano-single crystal silicon. [Figure 4] 2A and 2B are diagrams for explaining a second method of manufacturing the quantum entanglement device of FIG. 1, in which (A) is a cross-sectional view and (B) is an atomic arrangement diagram. [Figure 5] This is a table showing the coefficients bαβ of equation 2, where (A) shows the scattering cross section at the singlet level to triplet level transition for the primary excited state energy level 1SC, and (B) shows the scattering cross section at the singlet level to singlet level transition for the secondary excited state energy level 2SC. [Figure 6] The results of analysis of the scissors-type quantum entanglement device in Figure 1 using an inelastic neutron scattering spectrometer are shown. (A) is a two-dimensional plot showing the normalized scattering intensity S(Q,E) for energies of 90 to 140 meV, and (B) is a graph showing the normalized scattering intensity S(Q,113 meV) sliced ​​at the energy level 1SC=113 meV of (A). [Figure 7] 7 is a graph showing a Fourier transform spectrum of the normalized scattering intensity S(Q, 113 meV) at the energy level 1SC in FIG. 6(B). [Figure 8] The results of analysis of the scissors-type quantum entanglement device in Figure 1 using an inelastic neutron scattering spectrometer are shown. (A) is a two-dimensional plot showing the normalized scattering intensity S(Q,E) at energies of 200 to 250 meV, and (B) is a graph showing the normalized scattering intensity S(Q,226 meV) sliced ​​at the secondary excitation energy level 2SC=226 meV of (A). [Figure 9] FIG. 2 is an energy level diagram of the quantum entanglement device using the scissors vibration mode (SC mode) of FIG. 1. [Figure 10] 2 is a diagram illustrating the principle of quantum entanglement laser generation using two or more scissors-type quantum entanglement devices of FIG. 1. FIG. [Figure 11] FIG. 2 is a diagram showing a quantum entangled photon pair generating device using the scissors-type quantum entanglement device of FIG. 1. [Figure 12] This figure explains the physical analysis that must be performed to generate the non-uniform energy level spread necessary to identify individual scissors-type quantum entanglement devices when multiple scissors-type quantum entanglement devices are arranged as shown in Figure 1. (A) is a perspective view of the quantum entanglement device, (B) is an energy level diagram, and (C) is a frequency spectrum diagram of optical absorption / emission. [Figure 13] 2 is a diagram for explaining the operation of a controlled NOT gate of the scissors-type quantum entanglement device of FIG. 1. FIG. [Figure 14] 1. This figure explains the quantum teleportation protocol using the scissors-type quantum entanglement device of FIG. 1. (A) is a qubit layout diagram, and (B) is a wiring diagram. [Figure 15] FIG. 2 is a diagram illustrating a quantum computer using the scissors-type quantum entanglement device of FIG. 1. [Figure 16] FIG. 2 is a diagram illustrating the principle of Bell measurement using the scissors-type quantum entanglement device of FIG. 1. [Figure 17] 1A and 1B are diagrams for explaining a conventional quantum entanglement device, in which (A) is an energy level diagram and (B) is a diagram showing a cascade transition. [Example]

[0017] FIG. 1 is an atomic arrangement diagram showing an embodiment of a quantum entanglement device according to the present invention.

[0018] As shown in Figure 1, the quantum entanglement device consists of a silicon semiconductor (S) and a scissor-type quantum entanglement element (SQE) consisting of hydrogen atoms (protons) (H) 2 and 3 bonded to a single silicon atom 1 on the surface of the silicon semiconductor (S). In the silicon semiconductor (S), the silicon atoms 1 are covalently bonded with each other through a spring constant k1. In the scissor-type quantum entanglement element (SQE), the hydrogen atoms 2 and 3 are covalently bonded to the silicon atom 1 through a spring constant k2. The hydrogen atoms 2 and 3 are not chemically bonded to each other, but interact with each other through the silicon atom 1 through a spring constant k3. The oscillation of the scissor-type quantum entanglement element (SQE) is represented by a harmonic oscillator. Considering its inherent vibrational state, the hydrogen atoms 2 and 3 are both fermions, requiring antisymmetry for particle exchange. As a result, a correlation appears between the spin degree of freedom and the inherent vibrational state, forming quantum-mechanically indistinguishable entangled states. Since the zero-point vibrational energy of this quantum entangled state is 100 meV or more, it is possible to construct a scissors-type quantum entanglement element (SQE) that operates stably up to a temperature range of 600 K.

[0019] FIG. 2 is an atomic arrangement diagram for explaining a first method for manufacturing the quantum entanglement device of FIG.

[0020] First, a single-crystal silicon substrate (not shown) is etched by electrochemical anodization to form an aggregate of spherical nano-single-crystal silicon S1 as shown in the transmission electron microscope photograph of Figure 3(A). Here, the etching conditions are a current density of 10 mA / cm 2The etching solution is a mixture of HF, HO, and CHOH with a concentration ratio of 3:3:4. A p-type (100) single-crystal silicon substrate with a resistivity of 3-5 Ωcm is used. The spherical nano-single-crystal silicon S1 is analyzed using a small-angle X-ray scattering measurement device, and the small-angle X-ray scattering spectrum I(q) versus wavenumber q is obtained, as shown in Figure 3(B). By analyzing this spectrum using a polydisperse hard sphere model, the radius R (nm) distribution of spherical nano-single-crystal silicon S1 with various radius sizes can be evaluated, as shown in Figure 3(C). According to the radius size distribution N in Figure 3(C), the radius R of the spherical nano-single-crystal silicon S1 ranges from 0.4 to 2.5 nm, with an average radius R of 1.2 nm and an average diameter of 2.4 nm. A crystal schematic of spherical nano-single-crystal silicon S1 with a diameter of 2.4 nm is shown in Figure 2. The spherical nano-single crystal silicon S1 with a diameter of 2.4 nm consists of 377 silicon atoms, and when its surface structure is analyzed by infrared absorption spectroscopy, electron spin resonance, and secondary ion mass spectrometry, it is found that a structure in which hydrogen H is terminated is formed over the entire surface of the spherical nano-single crystal silicon S1, and there are almost no unbonded chemical bonds (dangling bonds) that are not hydrogen-terminated. In this case, the density of dangling bonds is 10 15 / cm 3 It is as follows.

[0021] Furthermore, in order to reduce the dangling bond density on the surface of the spherical nano-single crystal silicon S1 and promote hydrogenation, a hydrogenation termination treatment is performed. For example, the spherical nano-single crystal silicon S1 is immersed in a hydrofluoric acid (HF) solution of less than 10% or a 40% buffered hydrofluoric acid (NH4F) solution. This hydrogenation termination treatment reduces the dangling bond density to 10 14 / cm 3The spherical nano-single-crystalline silicon S1 obtained in this way has a spherical surface, and various crystal planes, such as the (100) and (111) planes, coexist at a microscopic level. As a result, SiH2 terminations are formed on the (100) plane and SiH2 terminations are formed on the (111) plane. In the spherical nano-single-crystalline silicon S1 fabricated by electrochemical anodization, the occupied areas of the (100) and (111) planes are almost identical, and infrared absorption spectroscopy revealed that the ratio of the number of SiH2 terminations to the number of SiH2 terminations was 1:1. The 196 hydrogen atoms (H) terminated on the surface of the spherical nano-single-crystalline silicon S1, which consists of 377 silicon atoms, were confirmed to have a surface structure consisting of approximately equal numbers of SiH2 (quantum double oscillator, QDO) and SiH2 (quantum triple oscillator, QTO), as shown in Figure 2.

[0022] In this way, a large number of SiH2 terminations as quantum triple oscillators (QTOs) can be firmly formed on the surface of the spherical nano-single-crystalline silicon S1, forming the scissors-type quantum entanglement element SQE shown in Figure 1. In addition, the quantum triple oscillator (QTO) terminated by SiH2 is in a state where Si and two H oscillate harmonically, and the spin state becomes a symmetric spin state or an antisymmetric spin state according to the odd-even property of the harmonic oscillator. On the other hand, the quantum double oscillator (QDO) terminated by SiH is in a state where Si and one H oscillate harmonically. In addition, in order to make the normal vibration of the scissors-type quantum entanglement element SQE an excited state or a ground state, an electric field E 1X ,E 1Y ,E 1Z An electric field generating circuit 201 (or a magnetic field generating circuit that generates a magnetic field or an electron beam generating circuit that generates an electron beam) is provided, and further, in order to separate the degenerate energy levels of the scissors-type quantum entanglement device SQE, an electric field E 2X ,E 2Y ,E 2Z An electric field generating circuit 202 that generates a magnetic field is provided. The electric field generating circuits 201 and 202 may be integrated into one electric field generating circuit.

[0023] 4A and 4B are diagrams for explaining a second manufacturing method of the quantum entanglement device of FIG. 1, in which (A) is a cross-sectional view and (B) shows the atomic structure of the surface.

[0024] First, (100) single crystal silicon S2 shown in FIG. 4(A) is prepared. Note that the surface of the (100) single crystal silicon S2 usually has a thin native oxide (SiO2) layer S2. O is formed.

[0025] Next, the surface of the (100) single crystal silicon S2 is subjected to hydrogen termination treatment. For example, the surface of the (100) single crystal silicon S2 is etched with a hydrofluoric acid (HF) solution of less than 10% or a 40% buffered hydrofluoric acid (NH4F) solution to form a thin native oxide (SiO2) layer S2. O After the removal, as shown in FIG. 4(B), a SiH2 termination is formed on the (100) plane of the (100) plane single crystal silicon S2.

[0026] In this way, a large number of SiH2 terminations as quantum triple oscillators (QTOs) can be firmly formed on the surface of the (100) single crystal silicon S2 as the scissors-type quantum entanglement device SQE shown in Figure 1. Note that the SiH terminations are not formed on the (100) single crystal silicon S2. In addition, in order to make the normal vibration of the scissors-type quantum entanglement device SQE an excited state or a ground state, an electric field E 1X ,E 1Y ,E 1Z An electric field generating circuit 401 (or a magnetic field generating circuit that generates a magnetic field or an electron beam generating circuit that generates an electron beam) is provided, and further, in order to separate the degenerate energy levels of the scissors-type quantum entanglement device SQE, an electric field E 2X ,E 2Y ,E 2Z An electric field generating circuit 402 that generates a magnetic field is provided. The electric field generating circuits 401 and 402 may be integrated into one electric field generating circuit.

[0027] The quantum entanglement state described above can be confirmed by measuring the infrared vibrational state using an inelastic neutron scattering (INS) spectrometer. In an inelastic neutron scattering spectrometer, the inelastic scattering of neutrons is measured by the time of flight (TOF) from when the neutron is generated until when it is detected. The infrared vibrational state is given by a graph of the normalized scattering intensity S(Q,E), a two-dimensional plot of Q and E described below, and is theoretically given by the following equation 2, which shows the scattering intensity:

number

number

[0028] By the way, the above quantum number n νρ The wave function Φ of the harmonic oscillator expressed as Φ(ξ 1ρ ) as the reference coordinate ξ 1ρ ,ξ 2ρ ,ξ 3ρ The reference coordinates and the displacement vector u shown in Figure 1 are 1ρ ,u 2ρ ,u 3ρ There is a relationship between them in number 4.

number

[0029] The total wave function Ψn representing the scissors-type quantum entanglement element SQE consisting of silicon atom 1 and hydrogen atoms 2 and 3 shown in Figure 1 νρ (ξ νρ ) is the wave function Φn of the vibrational state with the above reference coordinates as variables. νρ (ξ νρ ) and the spin state wave function σn νρ (ξ νρ ) and is expressed as the product of

number

[0030] ξ 3ρ The symmetry of other coordinates other than PΦn 1ρ (ξ 1ρ )=Φn 1ρ (ξ 1ρ ),PΦn 2ρ (ξ 2ρ )=Φn 2ρ (ξ 2ρ ) and vibrational wave function sign change does not occur, so the total wave function Ψn νρ (ξ νρ The antisymmetry requirement of () is taken care of by the terms of the spin state wave function. and n 1ρ and n 2ρ In all energy states, the singlet nuclear spin state is reached.

[0031] The scissors-type quantum entanglement element (SQE) consisting of silicon atom 1 and hydrogen atoms 2 and 3 shown in Figure 1 is a quantum entanglement device described by a singlet nuclear spin state or a triplet nuclear spin state, due to the requirement that the total wave function be antisymmetric with respect to the exchange of the coordinates of the two hydrogen atoms. A feature of this quantum entanglement device is that all physical vibrational states of the system consisting of silicon atom 1 and hydrogen atoms 2 and 3 shown in Figure 1 are in quantum entangled states, with the singlet nuclear spin state and triplet nuclear spin state being the most quantum entangled states.

[0032] Compared to the energy difference of 10 meV observed in hydrogen molecules in conventional quantum entanglement devices (see Non-Patent Document 1) made of hydrogen molecules, in the scissors-type quantum entanglement device SQE of the present invention made of two hydrogen atoms, the antisymmetric wave function generated by the product of the vibrational wave function and the spin wave function induces a large energy difference of 113 meV in the scissors vibration state (SC mode) between the singlet ground state and the triplet primary excited state, resulting in a quantum entanglement device SQE that operates stably even at room temperature. Furthermore, while conventional quantum entanglement devices (see Non-Patent Document 1) in which hydrogen molecules are in a gaseous state require a gas cell or the like, the scissors-type quantum entanglement device SQE of the present invention is firmly constructed on a silicon surface, making it suitable for practical use.

[0033] The normalized scattering intensity S(Q,E) at each energy level can be obtained by algebraic calculation of the nuclear spin wave function and the neutron spin wave function. The first excited state energy level 1SC of the above SC mode is 113 meV, which can be expressed in quantum numbers as n 3X =n 3Y =0 to n 3X =n 3Y = 1 (transition from an even function to an odd function). In this case, there is degeneracy between the X and Y directions. The coefficient b of the number of singlet level → triplet level transitions for the energy level 1SC αβ is calculated using the table shown in Figure 5(A). The secondary excited state energy level 2SC of the above SC mode is 226 meV, which can be expressed in quantum numbers as n 3X =n 3Y =0 to n 3X +n 3Y =2, that is, it corresponds to a transition from an even function to an even function. In this case, there is degeneracy between the X and Y directions. The coefficient b of the number of singlet level → singlet level transitions for the energy level 2SC αβ is calculated using the table shown in Figure 5(B). inc is the incoherent scattering cross section of each atom for neutrons, σ coh denotes the coherent scattering cross section of neutrons.

[0034] Incoherent scattering cross section b for the singlet level → triplet level transition shown in Figure 5(A) αβ This term gives the scattering intensity S of the energy level 1SC (=113 meV), and the diagonal component (b 22 ,b 33 ) can be described by incoherent scattering of hydrogen, so the scattering intensity S at the energy level 1SC (=113 meV) is expected to be large. Looking at the two-dimensional plot S(Q,E) of the experimental inelastic neutron scattering in Figure 6(A), we can see that strong scattering occurs at the energy level 1SC (=113 meV). The energy levels 1N (=80 meV) and 2M (=140 meV) in Figure 6(A) are strong scattering caused by SiH, and although it is sandwiched between these two spectra, the energy level 1SC is clearly present. In other words, neutron scattering at the energy level 1SC has a momentum transition Q = 6.8 Å, as shown in the experimental value 601 in Figure 6(B), which is the spectrum sliced ​​from S(Q,E) in Figure 6(A) at E = 113 meV. -1 This produces a strong scattering spectrum with a peak at

[0035] Incoherent scattering cross section b for the singlet level → triplet level transition shown in Figure 5(A) αβ This term gives the scattering intensity at the energy level 1SC (=113 meV), and the off-diagonal component (b 23 ,b 32 ) can be expressed in terms of incoherent scattering of hydrogen, so that large interference occurs in the scattering of the energy level 1SC (=113 meV). It is expected that the interference pattern will be due to the quantum entanglement of two hydrogen atoms. Looking at the inelastic neutron scattering experimental data 601 shown in Figure 6(B), which is a spectrum sliced ​​from S(Q,E) in Figure 6(A) at E = 113 meV, a clear interference pattern is observed in the scattering spectrum. This interference pattern indicates that two hydrogen atoms are in a quantum entangled state, and theoretically, it is predicted to be an interference pattern with a frequency component corresponding to the interatomic distance of 2.5 Å between the two hydrogen atoms. Figure 7 shows the results of Fourier transforming the inelastic neutron scattering experimental data 601 shown in Figure 6(B) to evaluate the interatomic distance from which the interference pattern originates. It has been experimentally proven, as shown in the experimental data 701, that the large interference occurring during scattering at the energy level 1SC (= 113 meV) originates from the interatomic distance of 2.5 Å between hydrogen atoms, as shown in the theoretical data 702.

[0036] When the quantum state is not entangled, no interference pattern is observed in the scattering spectrum. The theoretical value 602 in Figure 6(B) is for the case without quantum entanglement, and the theoretical value 603 is for the case with quantum entanglement. The theoretical value 602 for the case without quantum entanglement shows a smooth curve with no interference pattern. It was found that the spectrum obtained by Fourier transforming the theoretical value 602 for the case without quantum entanglement does not show any clear spectral peaks.

[0037] On the other hand, the coherent scattering cross section b for the singlet level → singlet level transition shown in Figure 5(B) αβ This term gives the scattering intensity S of the energy level 2SC (= 226 meV), and since the diagonal and off-diagonal components can all be expressed as coherent scattering terms of hydrogen and silicon atoms, it is expected that the scattering intensity S of the energy level 2SC (= 226 meV) will be very small, less than 1 / 10 of the scattering intensity S of the energy level 1SC (= 113 meV). coh (H) =1.76,σ coh (Si) =2.16,σ inc (H) =80.26 ,σ inc (Si)=0.0082 Looking at Figure 8(A), which shows the experimental values ​​of inelastic neutron scattering, we can see that no scattering is observed at the energy level 2SC (=226 meV). The energy levels 3M (=217 meV) and 3N (=237 meV) in Figure 8(A) are strong scattering caused by SiH, and although it is difficult to distinguish because it is sandwiched between these two spectra, it can be seen that the energy level 2SC has disappeared, or at least is a weak scattering that is hidden by the scattering at the energy levels 3M and 3N. In other words, the experimental value 801 for the energy level 2SC in Figure 8(B), which shows the spectrum obtained by slicing the scattering intensity S(Q,E) of Figure 8(A) at E=226 meV, does not form a clear scattering spectrum.

[0038] When the scattering spectrum of the experimental value 801 in Figure 8(B) is fitted with the theoretical value 802 without quantum entanglement and the theoretical value 803 with quantum entanglement, the scattering spectrum shown by the experimental value 801 at the energy level 2SC is close to the theoretical value 803 with quantum entanglement, suggesting that it is in a quantum entangled state. The small difference between the theoretical value 803 and the experimental value 801 at the 2SC energy level is thought to be due to the presence of tail components of scattering arising from the energy levels 3M and 3N at the energy level 2SC.

[0039] Based on the above experimental values ​​and analysis, it was found that all physical vibrational states of the system consisting of silicon atom 1 and hydrogen atoms 2 and 3 shown in Figure 1 become singlet nuclear spin states or triplet nuclear spin states, forming the most quantum entangled state and making it ideal for use as a quantum entanglement device.

[0040] FIG. 9 is an energy level diagram of the scissors-type quantum entanglement device SQE of FIG.

[0041] The scissors-type quantum entanglement device SQE in Figure 1 operates as a quantum triple oscillator (QTO). In particular, since the SC mode is a state in which singlet nuclear spin states and triplet nuclear spin states are alternately superimposed, by using the scissors-type quantum entanglement device SQE, as shown by the solid arrows in Figure 9, As shown in Figure 9, the SC mode of the scissors-type quantum entanglement device (SQE) has energy levels E0, E1, E2, ..., E 2n-2 ,E 2n-1 ,E 2n Each energy level E0, E1, E2, ..., E 2n-2 ,E 2n-1 ,E 2n has a wave function consisting of the product of the harmonic oscillator wave function Φ and the proton spin wave function σ. As a result, the even-numbered energy levels E0 = 0 meV, E2 = 226 meV, ... are spin singlet states (J = 0), and the odd-numbered energy levels E1 = 113 meV, E3 = 339 meV, ... are spin triplet states (J = 1). This energy state is similar to the level structure shown in Figure 17, which generates the conventionally used entangled photon pairs. Therefore, the cascade transition |R 2n,2n-1 >,|R 2n-1,2n-2 >;…;|R 21 >,|R 10 > and cascade transitions due to left-handed polarization |L 2n,2n-1 >,|L 2n-1,2n-2 >;…;|L 21 >,|L 10 > occurs. In this case, |R 2n,2n-1 >,|R 2n-1,2n-2 >;…,|L 2n,2n-1 >,|L 2n-1,2n-2 >;... are at the same energy level, 113 meV. In this case, only transitions in which the angular momentum J changes by ±1 are allowed for the light transitions, so the SC mode in a harmonic potential state, i.e., in a potential that creates a structure of equally spaced 2n levels, emits only fully entangled photon pairs.

[0042] By forming a direct product state of these entangled photon pairs and performing Bell measurements on this state, as shown in Figure 16 below, the physical state of the entangled photon pairs between the scissors-type quantum entanglement elements (SQEs) can be determined. toQuantum teleportation or quantum entanglement swapping can occur. The photon pair emitted here becomes quantum entangled light with a frequency of 27 THz, which is light in the THz region, making it an ideal light source for quantum optical information communication, quantum communication devices, quantum cryptography devices, stealth radar, quantum wireless light sources, non-invasive and non-destructive testing devices, etc. Here, the quantum entangled photon pair state Θ from n=2 to n=0 is 20 is expressed by the formula 6.

number

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[0043] For quantum information processing purposes, it may be necessary to change the energy levels of each entangled photon pair. In this case, a strained layer is provided under the (100) single-crystal silicon S2 in Figure 4. This can be achieved by adding impurities or forming defects to create a gradient concentration gradient in the underlying layer. For example, germanium impurities are added to the underlying silicon layer of the (100) single-crystal silicon S2 in a gradient-thickness manner. Alternatively, an underlying SiO2 layer S21 with a gradient thickness is provided. The underlying silicon layer or SiO2 layer S21 acts as a strained layer, introducing strain into the (100) single-crystal silicon S2, thereby enabling the separation of all the degenerate identical energy levels. Strain formation by adding germanium impurities can be achieved by utilizing the strained silicon thin-film fabrication technology used in high-speed CMOS circuits. That is, a silicon germanium buffer layer with a gradient concentration gradient is fabricated on a regular silicon wafer as a base, and a silicon thin film is epitaxially grown on this silicon germanium buffer layer with a large lattice constant. This generates tensile strain in the in-plane direction ((100) plane direction) and compressive strain perpendicular to the plane ((001) plane direction), which varies locally depending on the germanium concentration. This can change the spring constant k1 shown in Figure 1, thereby changing the energy level of the entangled photon pairs. On the other hand, the formation of the graded underlying SiO2 layer S21 can be achieved by using oxygen ion implantation technology, such as that used in SIMOX (Separation By Implanted Oxygen) wafers. Specifically, by controlling the irradiation time and implantation amount to grade the stoichiometric ratio between the Si layer S2 and the SiO2 layer S21, tensile strain (in the (100) plane direction) and compressive strain (in the (001) plane direction) perpendicular to the plane are generated, similar to the silicon germanium buffer layer, which can locally change the spring constant k1 shown in Figure 1. When it is difficult to introduce strain, applying an electric field or magnetic field to the (100)-plane single-crystal silicon S2 using the electric field generating circuit 402 (or magnetic field generating circuit) shown in Figure 4 can also be used to separate the degeneracy of the energy levels of the quantum entanglement device. In this case, the electric field interacts with the dipoles of the eigenoscillating state, while the magnetic field interacts with the spin and magnetic field. Therefore, the directions of the electric and magnetic fields are applied so that they match the directions of the resulting dipoles and spins (maximizing the inner product). However, depending on the magnitude of the applied electric or magnetic field, the spin state of the quantum entanglement device may change significantly, destroying the quantum entanglement state. Furthermore, since the quantum entanglement device SQE has a Fröhlich interaction effect, in which resonant or close energies interact with each other even when they are separated by a long distance, it is also possible to form an S21 layer with random concentration or thickness fluctuations, rather than a graded concentration or thickness gradient as described above.

[0044] In this way, by using the scissors-type quantum entanglement element SQE, cascade emission of entangled photons becomes possible. In a system in which many scissors-type quantum entanglement elements SQE are constructed on the spherical nano-single-crystal silicon S1 or the (100) single-crystal silicon S2, in addition to the cascade emission of the above-mentioned photon pairs, as shown by the dashed arrow in Figure 9, m = 1000, from the spin singlet state (J = 0) of 226 meV to the spin triplet state (J = 1) of 113 meV, -1, 0 ,+1The acoustic phonons (phonons) are emitted to the adjacent SQE element and relax along the route. Three Cascade radiation of phonon pairs |P 2n,2n-1 >,|P 2n-1,2n-2 >,…,|P 32 >,|P 21 >|P 10 > can also be obtained simultaneously. The probability of cascade emission of phonon pairs depends heavily on the geometric arrangement of the neighboring SQE elements. For example, if we want to suppress cascade emission of phonon pairs, we can arrange the scissors-type quantum entanglement elements SQE asymmetrically or randomly. The quantum state Ω of entangled photon pairs and acoustic pair from n=2 to n=0 20 is expressed by the number 8.

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[0045] FIG. 10 is a diagram showing the principle of quantum entanglement laser generation using two or more scissors-type quantum entanglement devices of FIG.

[0046] By utilizing the structure shown in Figure 2 or Figure 4(B), as shown in Figure 10, the scissors-type quantum entanglement elements SQE0, SQE1, and SQE2 are all excited, which allows stimulated emission and laser oscillation of entangled photon pairs 1011 and 1012, which was previously impossible. The advantage of this is that while conventional entangled photon pairs are emitted in all directions (4π) in space, in the present invention, multiple scissors-type quantum entanglement devices SQE0, SQE1, and SQE2 are arranged closely together, making it possible to give directionality to the entangled photon pairs.

[0047] FIG. 11 is a diagram showing a quantum entangled photon pair generation and detection device using the scissors-type quantum entanglement element SQE of FIG.

[0048] In Figure 11, when a pump light source 1101 emits pump light to a scissors-type quantum entanglement element (SQE), the SQE generates a photon pair with an entangled energy level of 113 meV. When this photon pair is detected by two detectors 1102 and 1103, one becomes "0" and the other becomes "1." Here, an entangled photon pair generation and detection device is configured so that the right-handed polarization state is "1" and the left-handed polarization state is "0."

[0049] Figure 12 is a diagram used to explain the physical analysis that must be performed to generate the non-uniform energy level spread required to identify individual scissors-type quantum entanglement devices when multiple scissors-type quantum entanglement devices, as shown in Figure 1, are arranged. (A) is a perspective view of the quantum entanglement device, (B) is an energy level diagram, and (C) is a frequency spectrum diagram of optical absorption / emission. For simplicity, the explanation here takes vibration in the X direction as an example. Note that the Y direction energy level is the same as the X direction energy level and is degenerate. The Z direction is not used in this quantum computing operation.

[0050] The vibrational energies of a single scissors-type quantum entanglement element (SQE) are ω1 (= 60 meV), ω2 (= 80 meV), and ω3 (= 113 meV), expressed in the following equation: where the spring constants in Figure 1 are k1, k2, and k3, the mass of silicon is m1, and the mass of hydrogen is m2.

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[0051] As shown in Figure 12(A), when strain is introduced into silicon S2 by adding impurities of graded concentration or by changing the thickness of the base S21 of silicon S2, the spring constant k1 can be changed by a small amount (about 1 / 10 of k1). Therefore, by changing the spring constant k1, the energy of ω2 (= 80 meV) can be given a width of ω2' as shown in equation 12. Note that the base S22 of the base S21 is silicon. In Figure 12(A), SQE 11 ,SQE 21 ,... are the target qubits, SQE 12 ,SQE 22 ,... are control qubits.

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[0052] Incidentally, even if the spring constant k1 is changed, the value of this energy level does not change, as can be seen from the expressions for ω1' and ω3'. Here, η is a quantity proportional to the strain, and when the base S21 is SiO2, η is a value that increases in proportion to the thickness of the SiO2 layer (η ∝ d).

[0053] Scissors-type quantum entanglement element (SQE) 11 ,SQE 12 When many SQEs are arranged, the individual SQEs 11 ,SQE 12 To distinguish between these, for example, the thickness of the substrate S21 is changed in a gradient to introduce strain into the silicon S2, as shown in Figure 12. This allows the energy level of ω2 (=80 meV) to be changed to form an inhomogeneous width, making it possible to distinguish between multiple scissors-type quantum entanglement devices.

[0054] To perform quantum computing operations, it is necessary to have two functions called universal gates, namely, a function for rotating a qubit and a function for a controlled NOT gate. For the qubit rotation, the well-known coherent interaction between matter and electromagnetic waves using a resonant laser pulse is used. The unitary transformation of the rotation operation is given by Equation 13.

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[0055] FIG. 13 is a diagram for explaining the operation of the controlled NOT gate of the scissors-type quantum entanglement device of FIG. 1. For example, the scissors-type quantum entanglement device SQE 11 ,SQE 12 The element SQE occurs only when both are excited. 11 ,SQE 12 We use the k4 interaction with a spring constant k4 between the two states. The weak k4 interaction forms a coupled oscillatory state, which is well known in classical mechanics. In quantum mechanical oscillatory states, the quantum element SQE 11 ,SQE 12 The phase is aligned and excited using a π pulse, etc. (|1> 12 |1> 11 ), between excited states with the same spin, a weak k4 interaction occurs, and the vibrational V 11 ,V 12 Since the phases are opposite, |1> shown in Figure 13(A) 12 |1> 11 From Figure 13 (B ) shown in -|1> 12 |1> 11 In particular, the scissors-type quantum entanglement element (SQE) 11 ,SQE 12 In this case, the energy state of ω2 (=80 meV) can form an inhomogeneous width, and at the same time, since both are singlet spin states, k4 interaction occurs, resulting in the |1> 12 |1> 11 From (B) of Figure 13, -|1> 12 |1>11 This is the same operation as the Cirac-Zoller gate (Hadamard gate) in a trapped ion quantum computer. Below, the operation rules of the k4 interaction gate are summarized in Equation 15.

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[0056] In this way, the linewidth of each level is about MHz, but by introducing strain into the silicon using a sloped substrate, for example, it is possible to create a non-uniform linewidth of about 1 THz, so the number of operable quantum elements (bits) can be increased to 10 6 In order to operate these large numbers of quantum bits individually, the frequency linewidth of the laser light must be made smaller than this. Here, the linewidth of each level is determined by its relationship with the ground state, so low-temperature operation at around 10 K is advantageous when operating a large number of quantum bits individually. When quantum computing is performed at room temperature, the linewidth of each level expands from MHz to GHz, so the number of operable quantum bits is 10 3 Reduce to a certain extent.

[0057] For simplicity, the explanation has been given using vibration in the X direction as an example, but by combining vibration in the X direction with vibration in the Y direction, quantum operations with memory functions can be performed. Specifically, since vibration in the X direction and vibration in the Y direction do not interact with each other, for example, when writing, the control quantum bit is excited with an electric field in the Y direction, and the target quantum bit is excited with an electric field in the X direction. When it becomes necessary to perform quantum operations, the control quantum bit is excited with an electric field in the Y direction. To achieve this, we simply convert the control qubit oscillating in the Y direction into an oscillation in the X direction. This conversion uses the ground state as an auxiliary field. That is, a qubit written in the Y direction is returned to the ground state using a π pulse polarized in the Y direction, and this state is converted into a qubit oscillating in the X direction using a π pulse polarized in the X direction. Alternatively, a control qubit oscillating in the Y direction can be converted into an oscillation in the X direction by using the lower level ω1 (=60 meV) as an auxiliary field and performing two rotation operations using a circularly polarized electromagnetic field with an energy level of ω2-ω1.

[0058] Figure 14 is a diagram for explaining a quantum teleportation protocol using the scissors-type quantum entanglement device of Figure 1, where (A) is a quantum bit layout diagram and (B) is a wiring diagram.

[0059] First, one of the quantum elements SQE0, SQE1, and SQE2 is converted into a superposition basis using a Hadamard gate H, and this is used as a control bit, and a controlled NOT gate C is applied to the other quantum element to create it. Specifically, quantum teleportation can be achieved by arranging the quantum bits SQE0, SQE1, and SQE2 as shown in Figure 14(A) and wiring these quantum bits as shown in Figure 14(B). Here, M represents a measurement gate. Finally, quantum teleportation can be achieved by performing the X rotation operation and Z rotation operation shown in Equation 17 on SQE2. Note that crz and crx are classical bits, and information is transmitted using a physical medium such as light.

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[0060] FIG. 15 is a diagram showing a quantum computer using the scissors-type quantum entanglement device of FIG.

[0061] In FIG. 15, input gates (e.g., Hadamard gates H) IN1, IN2, ..., IN m and output gates (for example, projection gate M) OUT1, OUT2, ..., OUT m There are m×n scissors-type quantum entanglement elements (SQE) between 11 ,SQE 12 ,…, SQE 1n ;SQE 21 ,SQE 22 ,…,SQE 2n ;…;SQE m1 ,SQE m2 ,…,SQE mn By arranging the scissors-type quantum entanglement elements SQE in a matrix, for example, and providing a unitary gate (such as a controlled NOT gate C) U for performing unitary operations between these scissors-type quantum entanglement elements, or by using a laser to resonantly excite the quantum entanglement elements, it becomes possible to perform unitary operations between the scissors-type quantum entanglement elements, and a quantum computer can be realized in which a large number of scissors-type quantum entanglement elements SQE are formed on a silicon substrate.

[0062] Furthermore, m×n scissors-type quantum entanglement devices SQE 11 ,SQE 12 ,…, SQE 1n ;SQE 21 ,SQE 22 ,…,SQE 2n ;…;SQE m1 ,SQE m2 ,…,SQE mnHowever, it is also possible to change these natural vibrational states by other methods. In this case, the above-mentioned strain is formed in the (100) single-crystal silicon S2 in Figure 4. That is, by adding impurities and forming defects in a gradient pattern, or by providing an underlying SiO2 with a gradient thickness, strain is introduced into the (100) single-crystal silicon S2, making it possible to separate the degenerate natural vibrational states. This makes it possible to assign addresses corresponding to the laser frequency between any of the m × n scissors-type quantum entanglement devices SQE, thereby realizing a quantum computer that can macroscopically control the operation of the scissors-type quantum entanglement devices SQE arranged in a microscopic manner.

[0063] FIG. 16 is a diagram showing the principle of Bell measurement using the scissors-type quantum entanglement device of FIG.

[0064] As shown in Figure 16, an ensemble of scissors-type quantum entanglement devices SQE (here, SQE0 and SQE1 are considered) can be considered as a quantum direct product state of the scissors-type quantum entanglement devices SQE0 and SQE1 if there is no correlation between the scissors-type quantum entanglement devices SQE0 and SQE1. In this case, as with the generation of entangled photon pairs described above, the physical state (vibrational state) of hydrogen between the scissors-type quantum entanglement devices SQE0 and SQE1 to Quantum teleportation or quantum entanglement swapping can occur. That is, when the scissors-type quantum entanglement devices SQE0 and SQE1 are entangled and form uncorrelated Cartesian product states, such as H(1)-H(2) and H(3)-H(4), (however, these pairs SQE0 and SQE1 do not need to be adjacent to each other), Bell state measurements are performed on hydrogen atoms H(2) and H(3). For example, if a Bell state measurement is achieved by passing an electron between hydrogen atoms H(2) and H(3) and measuring the electron's polarization state, the remaining pair of hydrogen atoms H(1) and H(4) can form an entangled state, as shown in Figure 16. Assuming that the ground states of the scissors-type quantum entanglement devices SQE0 and SQE1 have singlet spins and that there is no correlation between these scissors-type quantum entanglement devices SQE0 and SQE1, the wave function is expressed as follows:

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[0065] In the above-described embodiment, in addition to silicon crystals, germanium crystals, diamond crystals, amorphous silicon, amorphous germanium, amorphous carbon, silicon spherical nanocrystals, germanium spherical nanocrystals, carbon spherical nanocrystals, C60, carbon nanotubes, graphene, graphane, or mixed crystals of silicon, germanium, and carbon (C x Si y Ge z :H2,x,y,z>0) can be used to create quantum entanglement devices .

[0066] In the above embodiment, the carbon element is 1.11% C13 Contains natural isotopes of ,Si29 4.7% Contains natural isotopes of , Germanium element is 7.7% Ge73 These include natural isotopes Natural isotopesAll of these elements have spin (C13 has spin 1 / 2, Si29 has spin 1 / 2, and Ge73 has spin 9 / 2). These spins act to prevent entangled behavior in the scissors-type quantum entanglement element (SQE). Therefore, if the parts of the scissors-type quantum entanglement element (SQE) other than hydrogen are constructed using elements that do not contain spin using methods such as isotope separation, a quantum entanglement device with superior performance can be created.

[0067] Furthermore, in the above-described embodiment, hydrogen H1 contains 0.015% of the natural isotope deuterium H2, and since this element has a spin of 1, when one of the hydrogen atoms in the scissors-type quantum entanglement device SQE shown in Figure 1 is terminated with deuterium, the requirement for antisymmetry disappears when the wave functions of the hydrogen atoms are swapped, and quantum entanglement is no longer established. If the hydrogen portion of the scissors-type quantum entanglement device SQE is constructed using elements containing only hydrogen H1 using an isotope separation method, a quantum entanglement device with superior performance can be achieved.

[0068] In the above embodiment, even when both elements of the hydrogen atoms 2 and 3 shown in FIG. 1 are deuterium H2, a scissors-type quantum entanglement device SQE can be constructed.

[0069] In this case, the deuterium atom is a boson with spin 1, and therefore, the two deuterium atoms are required to have a total wave function symmetrical with respect to the exchange of their deuterium atomic coordinates. That is, the deuterium atomic coordinate u 2ρ and u 3ρ When the exchange operation P is performed, Pξ 1ρ =ξ 1ρ ,Pξ 2ρ =ξ 2ρ ,Pξ 3ρ =-ξ 3ρ and accordingly the Hermite polynomial Hn νρ (ξ νρ ) also has quantum number n νρ If is an even number, it is an even function, and if is an odd number, it is an odd function. 3ρ (ξ 3ρ ) is converted by the exchange operation P to odd-order energy levels PΦ odd (ξ 3ρ )=-Φ odd (ξ 3ρ) is transformed as follows. Due to the requirement that the total wave function be symmetric, the spin states of odd-numbered energy levels are antisymmetric. spin states, and the even energy levels have symmetry. spin This is the state.

[0070] ξ 3ρ The symmetry of other coordinates other than PΦn 1ρ (ξ 1ρ )=Φn 1ρ (ξ 1ρ ),PΦn 2ρ (ξ 2ρ )=Φn 2ρ (ξ 2ρ ) and vibrational wave function, the symmetry requirement of the total wave function is carried by the terms of the spin wave function, and n 1ρ and n 2ρ All energy states of the nucleus have symmetric nuclear spin states.

[0071] In this way, even if both elements are deuterium H2, which has a nuclear spin of 1, instead of hydrogen atoms 2 and 3 shown in Figure 1, the resulting quantum entanglement device can be described as a symmetric nuclear spin state or an antisymmetric nuclear spin state. The energy of the scissors vibration state (SC mode) of this quantum entanglement device is 81 meV from the ground state to the primary excited state, making it possible to generate entangled photon pairs of 19 THz. Note that when manufacturing a quantum entanglement device using deuterium H2, an etching solution containing deuterium is used instead of hydrogen.

[0072] The first advantage of a quantum entanglement device consisting of two deuterium H2 ions is that it can realize many superposition states with a single quantum entanglement device, as it has six symmetric nuclear spin states and three antisymmetric nuclear spin states.

[0073] A second advantage of a quantum entanglement device consisting of two deuterium H2 atoms is that, due to the giant isotope effect, the atomic bond between deuterium and silicon is stronger than the bond between hydrogen and silicon, making it suitable for practical use as the deuterium atoms do not detach from the silicon atoms even at high temperatures.

[0074] Furthermore, the present invention can be applied to any modifications within the scope of the above-described embodiments. [Industrial Applicability]

[0075] The present invention can be used in quantum entangled photon pair generators, quantum entangled photon pair laser devices, quantum computers, quantum communication devices, and quantum cryptography devices, as well as terahertz lasers, quantum optical information communication, stealth radar, quantum wireless light sources, non-invasive and non-destructive testing devices, etc. [Explanation of symbols]

[0076] S: Silicon semiconductor SQE,SQE 11 ,…:Scissors-type quantum bit element 1: Silicon atom 2,3: Hydrogen atom (proton) S1: Spherical nano-single crystal silicon S2: (100) single crystal silicon

Claims

1. a group IV semiconductor (S2); a scissors-type quantum entanglement element (SQE) consisting of at least one atom on the surface of the group IV semiconductor (S2) and two hydrogen atoms or two deuterium atoms bonded to the terminals of the atom; Equipped with the surface of the group IV semiconductor (S2) is a (100) plane, A quantum entanglement device in which strain is introduced into the group IV semiconductor (S2) to separate the degenerate energy levels of the scissors-type quantum entanglement element (SQE).

2. 2. The quantum entanglement device of claim 1, further comprising a generating circuit (201, 401) for generating an electric field, a magnetic field, or an electron beam in the group IV semiconductor (S2) to bring the normal vibration of the scissors-type quantum entanglement element (SQE) into an excited state or a ground state.

3. 2. The quantum entanglement device of claim 1, further comprising a generating circuit (202, 402) for generating an electric field or a magnetic field in the group IV semiconductor (S2) to separate degenerate energy levels of the scissors-type quantum entanglement element (SQE).

4. 2. The quantum entanglement device according to claim 1, further comprising an underlayer having a graded or randomly fluctuating impurity concentration or defect concentration provided under the group IV semiconductor (S2) for the introduction of the strain.

5. 2. The quantum entanglement device according to claim 1, further comprising an underlayer having a graded or randomly fluctuating thickness provided under the group IV semiconductor (S2) for introducing the strain.

6. The quantum entanglement device of claim 5 , wherein the underlayer comprises a silicon oxide layer.

7. The group IV semiconductor (S2) is selected from the group consisting of silicon crystal, germanium crystal, diamond crystal, amorphous silicon, amorphous germanium, amorphous carbon, C60, carbon nanotubes, graphene, graphane, and mixed crystals of silicon, germanium, and carbon (C ｘ Si ｙ Ge ｚ : H ２ , x, y, z>0).

8. The group IV semiconductor (S2) is a silicon crystal, a germanium crystal, a diamond crystal, amorphous silicon, amorphous germanium, amorphous carbon, C60, a carbon nanotube, graphene, graphane, or a mixed crystal of silicon, germanium, and carbon (C ｘ Si ｙ Ge ｚ : H ２ , x, y, z>0).

9. Furthermore, The quantum entanglement device of claim 4, wherein a phonon pair propagating in opposite directions is generated by cascade emission from the singlet excitation level → the spin angular momentum m = 0 state of the triplet excitation level → the singlet ground level.

10. Group IV semiconductors (S1, S2), a scissors-type quantum entanglement element (SQE) consisting of at least one atom on the surface of the group IV semiconductor (S1, S2) and two hydrogen atoms or two deuterium atoms bonded to the terminals of the atom; Equipped with a triplet excitation level exists between the singlet ground level and the singlet excitation level of the scissors-type quantum entanglement device (SQE), and by introducing strain into the group IV semiconductor, the difference between the singlet ground level and the triplet excitation level and the difference between the triplet excitation level and the singlet excitation level are made different; A cascade transition from the singlet excited level to the spin angular momentum m=+1 state of the triplet excited level to the singlet ground level; a cascade transition from the singlet excited level to the spin angular momentum m=−1 state of the triplet excited level to the singlet ground level; A quantum entanglement device that generates entangled photon pairs.

11. moreover, The quantum entanglement device of claim 10, wherein a phonon pair propagating in opposite directions is generated by cascade emission from the singlet excited level → the spin angular momentum m = 0 state of the triplet excited level → the singlet ground level.

12. A quantum entanglement device as described in claim 9 or 10, wherein the group IV semiconductor (S1) comprises a spherical nano-single crystal.

13. A quantum entanglement device according to claim 9 or 10, wherein the surface of the group IV semiconductor (S2) is a (100) surface.

14. The quantum entanglement device of claim 13, wherein strain is introduced into the group IV semiconductor (S2) to separate the degenerate energy levels of the scissors quantum entanglement element (SQE).

15. The quantum entanglement device of claim 1; a pump light source (1101) for exciting the scissors quantum entanglement device (SQE); It is equipped with A quantum entangled photon pair generating device in which the photon pairs generated from the scissors-type quantum entanglement element (SQE) are made to be in a quantum entangled state.

16. a group IV semiconductor (S2); A plurality of atoms on the surface of the group IV semiconductor and a plurality of scissors-type quantum entanglement elements (SQEs) each consisting of two hydrogen atoms or two deuterium atoms bonded to the terminals of each atom are provided. ０ , SQE １ )and a pump light source (1101) for collectively exciting the plurality of scissors-type quantum entanglement devices; It is equipped with the surface of the group IV semiconductor (S2) is a (100) plane, introducing strain into the group IV semiconductor (S2) to separate degenerate energy levels of the scissors quantum entanglement device (SQE); The plurality of scissors-type quantum entanglement devices (SQE ０ , SQE １ ) are arranged in close proximity to each other, and photon pairs generated from the plurality of scissors-type quantum entanglement elements (SQEs) are stimulated to emit.

17. a group IV semiconductor (S2); a plurality of scissors-type quantum entanglement elements (SQEs) consisting of a plurality of atoms on the surface of the group IV semiconductor (S2) and two hydrogen atoms or two deuterium atoms bonded to the terminals of each of the atoms; It is equipped with the surface of the group IV semiconductor (S2) is a (100) plane, introducing strain into the group IV semiconductor (S2) to separate degenerate energy levels of the scissors quantum entanglement device (SQE); The plurality of scissors-type quantum entanglement devices (SQE １１ , SQE １２ A quantum computer that performs unitary operations between quantum states.

18. The unitary operation is performed by each of the Scissors entanglement elements (SQEs). １１ , SQE １２ ) and the plurality of scissors-type quantum entanglement devices (SQE １１ , SQE １２ 18. The quantum computer of claim 17, wherein the quantum state is determined by a spring interaction between the quantum state and the quantum magnetic field.

19. 20. The quantum computer of claim 18, wherein the rotation is performed using an optical laser pulse.

20. a group IV semiconductor (S2); A plurality of atoms on the surface of the group IV semiconductor (S2) and a plurality of scissors-type quantum entanglement elements (SQEs) consisting of two hydrogen atoms or two deuterium atoms bonded to the terminals of each atom are provided. ０ , SQE １ )and It is equipped with the surface of the group IV semiconductor (S2) is a (100) plane, introducing strain into the group IV semiconductor (S2) to separate degenerate energy levels of the scissors quantum entanglement device (SQE); The plurality of scissors-type quantum entanglement devices (SQE ０ , SQE １ A quantum communication device that performs Bell measurements between quantum computers to allow quantum teleportation or quantum entanglement swapping.

21. a group IV semiconductor (S2); A plurality of atoms on the surface of the group IV semiconductor (S2) and a plurality of scissors-type quantum entanglement elements (SQEs) consisting of two hydrogen atoms or two deuterium atoms bonded to the terminals of each atom are provided. ０ , SQE １ )and It is equipped with the surface of the group IV semiconductor (S2) is a (100) plane, introducing strain into the group IV semiconductor (S2) to separate degenerate energy levels of the scissors quantum entanglement device (SQE); The plurality of scissors-type quantum entanglement devices (SQE ０ , SQE １ A quantum cryptography device that performs Bell measurements between quantum computers to enable quantum teleportation or quantum entanglement swapping.

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