Nitride phosphor and its manufacturing method

A nitride phosphor with a specific elemental composition and production method achieves high luminescence intensity, addressing the need for improved phosphors in light source devices for image projection and lighting applications.

JP7807635B2Active Publication Date: 2026-01-28NICHIA CORP
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Patent Information

Application Number
JP2021170982
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Filing Date
2021-10-19
Publication Date
2026-01-28
Estimated Expiration
2041-10-19

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Abstract

To provide a nitride phosphor capable of obtaining high light emission intensity.SOLUTION: A nitride phosphor includes: a group 1 element including at least one selected from the group consisting of lithium, sodium and potassium; a group 2 element including at least one selected from the group consisting of magnesium, calcium, strontium and barium; a group 13 element including at least one selected from the group consisting of aluminum, gallium and indium; a group 14 element including at least one selected from the group consisting of silicon, germanium and tin; nitrogen; and cerium, in its composition. The nitride phosphor uses a crystal having the same crystalline structure as CaAlSiN3 as a host crystal, and has an internal quantum efficiency in 450 nm excitation of 87% or more.SELECTED DRAWING: None
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Citation Information

Patent Citations

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    JP2012524141A

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    WO2006126567A1

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    WO2010110457A1

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