Light-emitting device, photoelectric conversion device, electronic device, lighting device, and mobile object

Abstract

To provide an art that is advantageous for high-density of a light emitting element.SOLUTION: A light emitting device has a structure with a first substrate and a second substrate laminated. The light emitting device comprises: a plurality of light emitting elements; and a drive circuit that drives the plurality of light emitting elements. A part of the drive circuit is arranged in the first substrate, and the other part of the drive circuit is arranged in the second substrate.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a light-emitting device, a photoelectric conversion device, an electronic device, a lighting device, and a mobile object. [Background technology]

[0002] Semiconductor devices are known that have a stacked structure of a substrate on which a plurality of light-emitting elements are arranged and a substrate on which a drive circuit for driving the plurality of light-emitting elements is arranged. For example, a semiconductor device described in Patent Document 1 includes a first substrate including a first transistor that drives a light-receiving element and a second substrate including a second transistor that drives the light-emitting element. Here, the first substrate has a light-emitting element and a light-receiving element, and a through electrode that penetrates the first substrate and transmits a drive signal for the light-emitting element from the second substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2018-174246 Summary of the Invention [Problem to be solved by the invention]

[0004] A structure in which a substrate on which a plurality of light-emitting elements are arranged and a substrate on which a drive circuit for driving the plurality of light-emitting elements are arranged are stacked allows for high integration without miniaturizing the light-emitting elements and the drive circuit, but a structure in which the drive circuit is integrated on a single substrate imposes a limit on how high the density of the light-emitting elements can be increased.

[0005] An object of the present invention is to provide a technique that is advantageous for increasing the density of light-emitting elements. [Means for solving the problem]

[0006] One aspect of the present invention relates to a light emitting device having a structure in which a first semiconductor substrate and a second semiconductor substrate are stacked, the light emitting device comprising: a plurality of light emitting elements; and a drive circuit that drives the plurality of light emitting elements; the drive circuit includes a first transistor, a second transistor, and a third transistor; The aforementioned a first transistor and the second transistor is disposed on the first semiconductor substrate, Third Transistor is disposed on the second semiconductor substrate the first transistor is a transistor for supplying a current corresponding to a signal input via a signal line to one of the plurality of light-emitting elements, the second transistor is a transistor for inputting the signal to a node of the first transistor, and the third transistor is a transistor for controlling a connection between a voltage line and the first transistor and for controlling light emission / non-emission of the one light-emitting element. . [Effects of the Invention]

[0007] The present invention provides a technique that is advantageous for increasing the density of light-emitting elements. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a schematic diagram showing the configuration of a light emitting device according to a first embodiment. [Figure 2] FIG. 2 is a diagram illustrating the circuit configuration of one pixel of the light emitting device according to the first embodiment. [Figure 3] FIG. 2 is a diagram illustrating the cross-sectional structure of one pixel of the light emitting device according to the first embodiment. [Figure 4] FIG. 4 is a diagram illustrating a cross-sectional structure of a first modified example of the light emitting device of the first embodiment. [Figure 5] FIG. 10 is a diagram illustrating a cross-sectional structure of a second modified example of the light emitting device of the first embodiment. [Figure 6] FIG. 10 is a diagram illustrating a cross-sectional structure of a third modified example of the light emitting device of the first embodiment. [Figure 7] FIG. 10 is a diagram illustrating a cross-sectional structure of a first modified example of the light emitting device of the second embodiment. [Figure 8] FIG. 10 is a diagram illustrating the cross-sectional structure of one pixel of the light emitting device according to the second embodiment. [Figure 9] FIG. 10 is a diagram illustrating a cross-sectional structure of a modified example of the light emitting device of the second embodiment. [Figure 10] FIG. 10 is a diagram illustrating a cross-sectional structure of a modified example of the light emitting device of the second embodiment. [Figure 11] FIG. 10 is a diagram illustrating the circuit configuration of one pixel of the light emitting device according to the third embodiment. [Figure 12] FIG. 10 is a diagram illustrating the circuit configuration of one pixel of a light emitting device according to a fourth embodiment. [Figure 13] FIG. 11 is a diagram illustrating the circuit configuration of one pixel of a light emitting device according to a fifth embodiment. [Figure 14] FIG. 13 is a diagram illustrating the circuit configuration of one pixel of a light emitting device according to a sixth embodiment. [Figure 15] FIG. 13 is a diagram illustrating the circuit configuration of one pixel of the light emitting device according to the seventh embodiment. [Figure 16] FIG. 13 is a diagram illustrating the cross-sectional structure of one pixel of the light emitting device according to the seventh embodiment. [Figure 17] FIG. 1A is a schematic cross-sectional view showing an example of a pixel of a display device according to one application example; and FIG. 1B is a schematic cross-sectional view of an example of a display device using an organic light-emitting element according to one application example. [Figure 18] FIG. 1 is a schematic diagram illustrating an example of a display device according to an application example. [Figure 19] 1A is a schematic diagram illustrating an example of an imaging device according to one application example, and FIG. 1B is a schematic diagram illustrating an example of an electronic device according to one application example. [Figure 20] FIG. 1A is a schematic diagram illustrating an example of a display device according to one application example; and FIG. 1B is a schematic diagram illustrating an example of a display device according to one application example. [Figure 21] 1A is a schematic diagram showing an example of a lighting device according to one application example, and FIG. 1B is a schematic diagram showing an example of a vehicle having a vehicle lamp according to one application example. [Figure 22] FIG. 1A is a schematic diagram showing an example of a wearable device according to one application example; and FIG. 1B is a schematic diagram showing an example of a wearable device according to one application example. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the scope of the invention claimed. Although multiple features are described in the embodiments, not all of these multiple features are necessarily essential to the invention, and multiple features may be combined arbitrarily. Furthermore, in the accompanying drawings, the same reference numerals are used to designate the same or similar components, and redundant explanations will be omitted.

[0010] FIG. 1 schematically illustrates the circuit configuration of a light-emitting device according to the first embodiment. The light-emitting device 101 according to the first embodiment may include a vertical scanning circuit 104, a signal output circuit 105, and a control unit 110. The pixel array 103 may include a plurality of pixels 102 arranged in a plurality of rows and a plurality of columns. Hereinafter, the row direction is a direction parallel to the plurality of rows, and the column direction is a direction parallel to the plurality of columns. The control unit 110 may generate control signals for controlling the vertical scanning circuit 104 and a vertical scanning control signal 111. The control unit 110 may, for example, supply the vertical scanning control signal 111 to the vertical scanning circuit 104 and supply a signal output control signal 112 and image data 113 to the signal output circuit 105.

[0011] The vertical scanning circuit 104 can be configured to drive multiple scanning lines 106 extending in the row direction. The vertical scanning circuit 104 outputs a write control signal to each scanning line 106 in accordance with a vertical scanning control signal 111. Note that outputting a write control signal means activating the write control signal. The signal output circuit 105 can capture image data 113 sequentially sent from the control unit 110 in accordance with a signal output control signal 112. The signal output circuit 105 performs D / A conversion on the image data 113 to generate a voltage signal (hereinafter referred to as Vsig) as a luminance signal corresponding to the value of the image data 113, and outputs the voltage signal to each signal line 107. A pixel 102 is arranged at each intersection of the scanning line 106 and the signal line 107, and the scanning line 106 and the signal line 107 are connected to the corresponding pixel 102. The pixel 102 emits light at a luminance corresponding to the signal level of Vsig supplied thereto. 1 illustrates a pixel array 103 having three horizontal columns and two vertical rows of pixels, the number of pixels is not limited to this. Similarly, in the subsequent figures, even if the number of pixels is illustrated, the number of pixels is not limited to this.

[0012] FIG. 2 illustrates an example of the circuit configuration of one pixel 102 of the light-emitting device 101 of FIG. 1. As illustrated in FIG. 2, each pixel 102 may include a light-emitting element 201 and multiple elements that drive the light-emitting element 201. The multiple elements of each pixel 102 may constitute a unit driver circuit. A collection of multiple elements in each of the multiple pixels 102 that make up the pixel array 103 may be understood as constituting a driver circuit that drives the multiple light-emitting elements 201 of the pixel array 103. The multiple elements of each pixel 102 may include multiple active elements. The multiple elements of each pixel 102 may include multiple active elements and at least one passive element (e.g., a capacitive element). In one example, the multiple elements of each pixel 102 may include a drive transistor 202 that drives the light-emitting element 201 and a write transistor 203 that writes a signal to a write node that includes the gate of the drive transistor.

[0013] The light-emitting device 101 may have a structure in which a first substrate 11 and a second substrate 12 are stacked. The light-emitting device 101 may also have a configuration in which three or more substrates are stacked. The light-emitting device 101 may be configured as a display device, for example, an organic electroluminescent (EL) display device. In this case, the light-emitting element 201 may have an organic layer including an emitting layer between an anode and a cathode. The organic layer may have at least one of a hole injection layer, a hole transport layer, an electron injection layer, and an electron transport layer in addition to the emitting layer. In the following, an example is described in which the driving transistor 202 is connected to the anode of the light-emitting element 201 and all transistors are P-type transistors, but the light-emitting device of the present invention is not limited to this. The polarity and conductivity type may all be reversed. For example, the driving transistor may be a P-type transistor and the other transistors may be N-type transistors, and the supplied potential and connection may be changed appropriately according to the conductivity type and polarity.

[0014] In a specific configuration example, one of the source and drain (here, the drain) of the driving transistor 202 is connected to a first electrode (here, the anode) of the light-emitting element 201. The other (here, the source) of the driving transistor 202 is connected to a first voltage line (hereinafter, Vdd) 204. A second electrode (here, the cathode) of the light-emitting element 201 is connected to a second voltage line (hereinafter, Vss) 205.

[0015] The driving transistor 202 passes a current from Vdd 204 to Vss 205 through the light emitting element 201, thereby causing the light emitting element 201 to emit light. More specifically, the driving transistor 202 supplies a current to the light emitting element 201 according to the voltage signal Vsig written to the write node via the signal line 107. As a result, the driving transistor 202 current-drives the light emitting element 201, causing it to emit light.

[0016] One of the source and drain of the write transistor 203 may be electrically connected to a write node including the gate of the drive transistor 202. The other of the source and drain of the write transistor 203 may be electrically connected to the signal line 107, and the gate of the write transistor 203 may be electrically connected to the scan line 106.

[0017] The light-emitting element 201 may be disposed on the second surface S2 of the first substrate 11, the driving transistor 202 may be disposed on the first substrate 11, and Vdd 204 and Vss 205 may be disposed in a first wiring structure 512. From another perspective, the light-emitting element 201, the driving transistor 202, Vdd 204, and Vss 205 may be disposed in a first structure consisting of the first substrate 11 and the first wiring structure 512. The write transistor 203 may be disposed on the second substrate 12, and the scan line 106 and the signal line 107 may be disposed in a second wiring structure 522. From another perspective, the write transistor 203, the scan line 106, and the signal line 107 may be disposed in a second structure consisting of the second substrate 12 and the second wiring structure 522. The junction 513 may be electrically connected to the gate of the driving transistor 202 disposed on the first substrate 11 via a conductive path (e.g., a wiring pattern, a plug).

[0018] The junction 523 may be electrically connected to the source of the write transistor 203 disposed on the second substrate 12 via a conductive path (for example, a wiring pattern or a plug). The junction 513 and the junction 523 may be bonded to each other. This bonding may be a Cu-Cu bond, with the junctions 513 and 523 each made of copper (Cu). However, the bonding method is not limited to Cu-Cu bonding.

[0019] The write transistor 203 is rendered conductive in response to a control signal applied to its gate. This allows the write transistor 203 to write a voltage signal Vsig corresponding to display data supplied from the signal output circuit 105 via a signal line 107 to the write node of the pixel 102. The voltage signal Vsig written to the write node is applied to the gate of the drive transistor 202. Note that the back gate voltage of either transistor can be the voltage Vdd 204.

[0020] When the light emitting element 201 is configured as an organic EL element, the current flowing through the drive transistor 202 can depend on the voltage signal Vsig. This current charges the capacitance between the first electrode (here, an anode) and the second electrode (here, a cathode) of the light emitting element 201 to a potential corresponding to the voltage signal Vsig, and a current corresponding to that potential flows through the light emitting element 201. This causes the light emitting element 201 to emit light with a brightness corresponding to the voltage signal Vsig.

[0021] FIG. 3 schematically illustrates the cross-sectional structure of one pixel 102 of the light-emitting device 101 of the first embodiment. The light-emitting device 101 may have a structure in which a first substrate 11 and a second substrate 12 are stacked. The first substrate 11 and the second substrate 12 may be semiconductor substrates, for example, silicon substrates made of silicon (Si). The first substrate 11 has a first surface S1 and a second surface S2 that are opposite to each other, and the second substrate 12 has a third surface S3 and a fourth surface S4 that are opposite to each other. A first wiring structure 512 may be arranged in contact with the first surface S1, and a second wiring structure 522 may be arranged in contact with the third surface S3. The first wiring structure 512 and the second wiring structure 522 may be coupled to each other. A plurality of light-emitting elements 201 may be arranged on the second surface S2 of the first substrate 11. At least a portion of the drive transistor 202 (first element) can be arranged between the first surface S1 and the first wiring structure 512. At least a portion of the write transistor 203 (second element) can be arranged between the third surface S3 and the second wiring structure 522.

[0022] The first wiring structure 512 may include a plurality of stacked conductive paths (wiring patterns, plugs) 510 and an interlayer insulating film 511 arranged to insulate the plurality of conductive paths 510. The second wiring structure 522 may include a plurality of stacked conductive paths (wiring patterns, plugs) 520 and an interlayer insulating film 521 arranged to insulate the plurality of conductive paths 520. The conductive paths 510 and 520 may be made of a wiring material such as copper (Cu), tungsten (W), or aluminum (Al). The conductive paths 510 and 520 may be formed by bonding a junction 513 and a junction 523. The junctions 513 and 523 may be electrically connected by, for example, Cu-Cu bonding.

[0023] An N-type well layer 506 may be disposed on the first substrate 11. A portion of the drive transistor 202 may be disposed between the first substrate 11 and the first wiring structure 512. More specifically, P-type diffusion regions 401 and 403 of the drive transistor 202 may be disposed on the first substrate 11, and a gate 402 of the drive transistor 202 may be disposed on the first surface S1 of the first substrate 11 via a gate insulating film. The drive transistor 202 may be formed, for example, by a general CMOS process. An N-type well layer 507 and a P-type semiconductor layer 509 may be disposed on the second substrate 12. A portion of the write transistor 203 may be disposed between the second substrate 12 and the second wiring structure 522. More specifically, P-type diffusion regions 404 and 406 of the write transistor 203 may be disposed on the second substrate 12, and a gate 405 of the write transistor 203 may be disposed on the third surface S3 of the second substrate 12 via a gate insulating film. The write transistor 203 can be formed by a general CMOS process. The P-type diffusion regions 401, 403 of the first substrate 11 and the P-type diffusion regions 404, 406 of the second substrate 12 may differ from each other in at least one of concentration and depth.

[0024] For example, a conductive plug 600 may be disposed in the first substrate 11 as a conductive path penetrating the first substrate 11. In one example, a through hole may be formed in the first substrate 11, and the conductive plug 600 may be disposed in the through hole via an insulating film 601. The conductive plug 600 may be made of, for example, copper (Cu), tungsten (W), or aluminum (Al). Shallow trench isolation (STI) 508 may be disposed at the boundary between pixels in the first substrate 11. Shallow trench isolation (STI) 508 may also be disposed at the boundary between pixels in the second substrate 12.

[0025] An insulating film 501 may be disposed on the second surface S2 of the first substrate 11. A light-emitting element 201 may be disposed on the insulating film 501. The light-emitting element 201 may include, for example, a lower electrode 502, an organic EL film (light-emitting layer) 503, and an upper electrode 504. The lower electrode 502 may be formed of a metal material. The upper electrode 504 may be formed of a transparent electrode that transmits light. In one example, the lower electrode 502 is an anode and the upper electrode 504 is a cathode, but these may be interchanged. The light-emitting element 201 may emit light in accordance with a drive signal transmitted via the conductive plug 600.

[0026] The light-emitting device 101 may include a first substrate 11 on which a drive transistor 202 for driving a light-emitting element 201 is disposed, and a second substrate 12 on which a write transistor 203 is disposed. The light-emitting element 201 is disposed on a second surface S2 of the first substrate 11, and the drive transistor 202 and the light-emitting element 201 may be electrically connected by a conductive plug 600 penetrating the first substrate 11. This configuration can reduce the area occupied by the transistors on each of the first substrate 11 and the second substrate 12. Therefore, the light-emitting device 101 of the first embodiment is advantageous for arranging light-emitting elements at a high density without reducing the size of each transistor. Furthermore, the first embodiment is advantageous for achieving high definition when the light-emitting device 101 is embodied as a display device.

[0027] FIG. 4 illustrates a cross-sectional structure of a first modified example of the first embodiment. Details not mentioned in the first modified example may conform to the first embodiment. In the first modified example, an impurity semiconductor region, more specifically, a P-type diffusion region 602, is provided as a conductive path penetrating the first substrate 11. FIG. 5 illustrates a cross-sectional structure of a second modified example of the first embodiment. Details not mentioned in the second modified example may conform to the first embodiment. In the second modified example, an impurity semiconductor region, more specifically, a P-type diffusion region 602, is provided as a conductive path penetrating the first substrate 11. In addition, in the second modified example, an insulating film 601 is provided to surround the P-type diffusion region 602. The impurity semiconductor region may be an N-type diffusion region.

[0028] FIG. 6 illustrates a circuit configuration of a third modified example of the first embodiment. Matters not mentioned in the third modified example may conform to the first embodiment or the first or second modified examples. In the third modified example, multiple signal lines extending along the column direction, for example, two signal lines 107-a and 107-b, are provided for each column of the pixel array 103. The write transistor 203 and the two signal lines 107-a and 107-b provided for each column may be arranged in a second wiring structure 522. This configuration is advantageous for arranging light-emitting elements at a high density without reducing the size of each transistor. Furthermore, when the light-emitting device 101 is embodied as a display device, the third modified example is advantageous for achieving high resolution and improving the frame rate.

[0029] FIG. 7 illustrates the circuit configuration of a pixel 102 of a light-emitting device 101 of a second embodiment. FIG. 8 illustrates the cross-sectional structure of a pixel 102 of a light-emitting device 101 of a second embodiment. Details not mentioned in the second embodiment may conform to the first embodiment or its modified examples. In the second embodiment, the light-emitting element 201 may be disposed on the second surface S2 of the first substrate 11, the write transistor 203 may be disposed on the first substrate 11, and the scan line 106, the signal line 107, and the Vss 205 may be disposed in a first wiring structure 512. From another perspective, the light-emitting element 201, the write transistor 203, the scan line 106, the signal line 107, and the Vss 205 may be disposed in a first structure consisting of the first substrate 11 and the first wiring structure 512. In the second embodiment, the drive transistor 202 may be disposed on the second substrate 12, and the Vdd 204 may be disposed in a second wiring structure 522. In another aspect, the drive transistor 202 and Vdd 204 may be disposed in a second structure consisting of the second substrate 12 and the second wiring structure 522 .

[0030] The junction 523 may be electrically connected to the gate 405 of the drive transistor 202 disposed on the second substrate 12 via a conductive path (e.g., a wiring pattern, a plug). The junction 513 may be electrically connected to the source of the write transistor 203 disposed on the first substrate 11 via a conductive path (e.g., a wiring pattern, a plug). The junction 513 and the junction 523 may be bonded to each other. This bonding may be a Cu-Cu bond, with the junctions 513 and 523 each made of copper (Cu). However, the bonding method is not limited to Cu-Cu bonding.

[0031] A portion of the write transistor 203 may be disposed between the first substrate 11 and the first wiring structure 512. More specifically, P-type diffusion regions 401 and 403 of the write transistor 203 may be disposed on the first substrate 11, and a gate 402 of the write transistor 203 may be disposed on the first surface S1 of the first substrate 11 with a gate insulating film interposed therebetween. The write transistor 203 may be formed by a typical CMOS process. A portion of the drive transistor 202 may be disposed between the second substrate 12 and the second wiring structure 522. More specifically, P-type diffusion regions 404 and 406 of the drive transistor 202 may be disposed on the second substrate 12, and a gate 405 of the drive transistor 202 may be disposed on the third surface S3 of the second substrate 12 with a gate insulating film interposed therebetween. The drive transistor 202 may be formed by a typical CMOS process. The P-type diffusion regions 401, 403 of the first substrate 11 and the P-type diffusion regions 404, 406 of the second substrate 12 may differ from each other in at least one of concentration and depth.

[0032] According to the above-described configuration, it is possible to reduce the area occupied by the transistors on each of the first substrate 11 and the second substrate 12. Therefore, the light emitting device 101 of the second embodiment is advantageous for arranging light emitting elements at high density without reducing the size of each transistor. Furthermore, when the light emitting device 101 is embodied as a display device, the second embodiment is advantageous for achieving high definition.

[0033] Fig. 9 shows the circuit configuration of a pixel 102 of a light emitting device 101 according to a modification of the second embodiment. Fig. 10 shows the cross-sectional structure of a pixel 102 of a light emitting device 101 according to a modification of the second embodiment. Items not mentioned as modifications may follow the second embodiment.

[0034] In this modification, the driving transistor 202 of the second embodiment is replaced with a driving transistor 302. The back gate of the driving transistor 302 is self-biased. The source and back gate of the driving transistor 302 are electrically connected to Vdd 204. An N-type well layer 507 and a P-type semiconductor layer 509 may be arranged inside the second substrate 12. A P-type semiconductor region 407 may be arranged inside the N-type well layer 507, and an N-type well layer 408 may be arranged inside the P-type semiconductor region 407. The N-type well layer 507 and the N-type well layer 408 may be separated by the P-type semiconductor region 407. A part of the driving transistor 302 using the N-type well layer 408 may be arranged between the second substrate 12 and the second wiring structure 522. More specifically, P-type diffusion regions 404, 406 of the driving transistor 302 may be arranged on the second substrate 12, and a gate 405 of the driving transistor 302 may be arranged on the third surface S3 of the second substrate 12 via a gate insulating film. The driving transistor 302 may be formed by a general CMOS process. The P-type diffusion regions 401, 403 of the first substrate 11 and the P-type diffusion regions 404, 406 of the second substrate 12 may differ from each other in at least one of concentration and depth.

[0035] According to the light emitting device 101 of the modified example of the second embodiment, the driving transistor 302 with a self-biased back gate is disposed on the second substrate 12, thereby making it possible to suppress characteristic variations due to manufacturing variations of the transistor. This is advantageous for suppressing variations in the amount of light emitted by the plurality of pixels 102 of the light emitting device 101.

[0036] 11 illustrates the circuit configuration of one pixel 102 of a light-emitting device 101 of the third embodiment. Matters not mentioned in the third embodiment may conform to the first or second embodiment or their modifications. In the third embodiment, each pixel 102 may include a light-emitting element 201, a drive transistor 202, a write transistor 203, Vdd 204, Vss 205, a light-emitting control transistor 701, a first capacitor 702, and a second capacitor 703. In the third embodiment, each pixel 102 may further include a first scanning line 106a, a second scanning line 106b, and a signal line 107.

[0037] The light-emitting element 201, the driving transistor 202, the writing transistor 203, the first capacitance element 702, and the second capacitance element 703 can be arranged on the first substrate 11. The first scan line 106a, the signal line 107, and Vss 205 can be arranged in a first wiring structure 512. From another perspective, the light-emitting element 201, the driving transistor 202, the writing transistor 203, the first capacitance element 702, and the second capacitance element 703 can be arranged in a first structure consisting of the first substrate 11 and the wiring structure 512. The light-emitting control transistor 701 can be arranged on the second substrate 12, and the second scan line 106b and Vdd 204 can be arranged in a second wiring structure 522. From another perspective, the light-emitting control transistor 701, the second scan line 106b, and Vdd 204 can be arranged in a second structure consisting of the second substrate 12 and the second wiring structure 522. The source of the light-emitting control transistor 701 arranged on the second substrate 12 and the second capacitance element 703 arranged on the first substrate 11 can be electrically connected via a junction such as a Cu-Cu junction. The drain of the light-emitting control transistor 701 arranged on the second substrate 12 and the source of the driving transistor 202 arranged on the first substrate 11 can be electrically connected via a junction such as a Cu-Cu junction.

[0038] One of the source and drain (here, the source) of the light-emitting control transistor 701 may be connected to one of the source and drain (here, the drain) of the driving transistor 202. The other of the source and drain of the light-emitting control transistor 701 may be connected to Vdd204. The gate of the writing transistor 203 may be connected to the first scanning line 106a. The gate of the light-emitting control transistor 701 may be connected to the second scanning line 106b. The first capacitance element 702 may be arranged so as to electrically connect the gate and source of the driving transistor 202 (the connection node between the driving transistor 202 and the light-emitting control transistor 701). The second capacitance element 703 may be arranged so as to electrically connect the source of the driving transistor 202 to Vdd204. The first capacitance element 702 and the second capacitance element 703 have the function of holding the voltage between the source and gate of the driving transistor 202. The first capacitance element 702 and the second capacitance element 703 may be formed of parasitic capacitance or an MIM structure.

[0039] When the light-emission control transistor 701 is in a conductive state, it enables current supply from Vdd 204 to the drive transistor 202. This enables the drive transistor 202 to drive the light-emitting element 201 and cause the light-emitting element 201 to emit light. In other words, the light-emission control transistor 701 functions as a transistor that controls whether the light-emitting element 201 emits light or not.

[0040] In the third embodiment, a light-emitting element 201, a drive transistor 202, a write transistor 203, a first scan line 106a, a signal line 107, Vss 205, a first capacitor 702, and a second capacitor 703 are arranged in a first structure including a first substrate 11 and a first wiring structure 512. Furthermore, a light-emitting control transistor 701, a second scan line 106b, and Vdd 204 are arranged in a second structure including a second substrate 12 and a second wiring structure 522. This reduces the area occupied by the transistors on each of the first substrate 11 and the second substrate 12. Therefore, the light-emitting device 101 of the third embodiment is advantageous for arranging light-emitting elements at high density without reducing the size of each transistor. Furthermore, the third embodiment is advantageous for achieving high resolution when the light-emitting device 101 is embodied as a display device.

[0041] FIG. 12 illustrates the circuit configuration of one pixel 102 of a light-emitting device 101 of the fourth embodiment. Matters not mentioned in the fourth embodiment may follow the third embodiment. In the fourth embodiment, the light-emitting element 201 may be disposed on the second surface S2 of the first substrate 11, and the drive transistor 202, write transistor 203, and light-emission control transistor 701 may be disposed on the first substrate 11. Furthermore, the first scanning line 106a, the second scanning line 106b, the signal line 107, Vdd 204, and Vss 205 may be disposed in a first wiring structure 512. From another perspective, the light-emitting element 201, drive transistor 202, write transistor 203, and light-emission control transistor 701 may be disposed in a first structure consisting of the first substrate 11 and the first wiring structure 512. The first scanning line 106a, the second scanning line 106b, the signal line 107, Vdd 204, Vss 205, and the first capacitance element 702 may be arranged in a first structure including the first substrate 11 and the first wiring structure 512. The second capacitance element 703 may be arranged on the second substrate 12.

[0042] According to the fourth embodiment, the second capacitance element 703 is disposed on the second substrate 12, thereby reducing the area occupied by the elements on each of the first substrate 11 and the second substrate 12. Therefore, the light emitting device 101 of the fourth embodiment is advantageous for arranging light emitting elements at high density without reducing the size of each transistor. Furthermore, when the light emitting device 101 is embodied as a display device, the fourth embodiment is advantageous for achieving high definition.

[0043] FIG. 13 illustrates the circuit configuration of one pixel 102 of a light-emitting device 101 according to the fifth embodiment. Matters not mentioned in the fifth embodiment may conform to those of the third embodiment. In the fifth embodiment, the light-emitting element 201, the drive transistor 202, the write transistor 203, the light-emitting control transistor 701, and the second capacitance element 703 may be disposed on the first substrate 11. In the fifth embodiment, the first scanning line 106a, the second scanning line 106b, the signal line 107, Vdd 204, and Vss 205 may be disposed on the first wiring structure 512. In addition, in the fifth embodiment, the first capacitance element 702 may be disposed on the second substrate 12. Thus, the light-emitting device 101 according to the fifth embodiment is advantageous for densely arranging light-emitting elements without reducing the size of each transistor. Furthermore, the fifth embodiment is advantageous for achieving high resolution when the light-emitting device 101 is embodied as a display device.

[0044] FIG. 14 illustrates the circuit configuration of one pixel 102 of a light-emitting device 101 according to the sixth embodiment. Matters not mentioned in the sixth embodiment may conform to those of the third embodiment. In the sixth embodiment, each pixel 102 may include a light-emitting element 201, a drive transistor 202, a write transistor 203, Vdd 204, Vss 205, a light-emission control transistor 701, a first capacitor 702, and a second capacitor 703. Each pixel 102 may also include a reset transistor 704, a first scanning line 106a, a second scanning line 106b, a third scanning line 106c, and a signal line 107. The light-emitting element 201, the drive transistor 202, the write transistor 203, the light-emission control transistor 701, the first capacitor 702, and the second capacitor 703 may be disposed on a first substrate 11. The first scanning line 106a, the second scanning line 106b, and the signal line 107 may be disposed on a first wiring structure 512. The reset transistor 704 may be disposed on the second substrate 12, and the third scan line 106c may be disposed on the second wiring structure 522.

[0045] One of the source and drain of the reset transistor 704 (the source in FIG. 14 ) and one of the source and drain of the drive transistor 202 (the drain here) may be electrically connected via a junction such as a Cu-Cu junction. The other of the reset transistor 704 may be electrically connected to Vss 205. The gate of the reset transistor 704 may be electrically connected to the third scan line 106c. When the reset transistor 704 is in a conductive state, it resets the voltage of the anode of the light-emitting element 201 to the potential of Vss. That is, the reset transistor 704 functions as a transistor that controls whether the light-emitting element 201 emits light or not.

[0046] As described above, in the sixth embodiment, the light-emitting element 201, the drive transistor 202, the write transistor 203, the light-emitting control transistor 701, the first capacitance element 702, and the second capacitance element 703 can be arranged on the first substrate 11. The first scanning line 106a, the second scanning line 106b, the signal line 107, Vdd 204, and Vss 205 can be arranged on the first wiring structure 512. The reset transistor 704 can be arranged on the second substrate 12, and the third scanning line 106c and Vss 205 can be arranged on the second wiring structure 512. This reduces the area occupied by elements on each of the first substrate 11 and the second substrate 12. Therefore, the light-emitting device 101 of the sixth embodiment is advantageous for arranging light-emitting elements at high density without reducing the size of each transistor. Furthermore, the sixth embodiment is advantageous for achieving high resolution when the light-emitting device 101 is embodied as a display device.

[0047] FIG. 15 illustrates the circuit configuration of one pixel 102 of a light-emitting device 101 of the seventh embodiment. FIG. 16 illustrates the cross-sectional structure of a pixel 102 of a light-emitting device 101 of the seventh embodiment. Matters not mentioned in the seventh embodiment may conform to the first to sixth embodiments or the above-mentioned modified examples. Below, for convenience, the description will be given while showing two pixels 102-a and 102-b. The pixel 102-a is an example of a first type of pixel, and the pixel 102-b is an example of a second type of pixel. Alternatively, the pixel 102-b is an example of a first type of pixel, and the pixel 102-a is an example of a second type of pixel. The first type of light-emitting element and the second type of light-emitting element are configured to express different colors. The first type of light-emitting element and the second type of light-emitting element can be configured to express different colors by having color filters of different colors. Alternatively, the first and second types of light-emitting elements may be configured so that the organic layers emit light in different wavelength bands, thereby expressing different colors. The first and second types of light-emitting elements may be arranged adjacent to each other.

[0048] As described above, each of the multiple pixels 102 constituting the pixel array 103 may include a light-emitting element 201 and multiple elements that drive the light-emitting element 201. The multiple elements of each pixel 102 may constitute a unit drive circuit. A collection of the multiple elements of each of the multiple pixels 102 constituting the pixel array 103 may be understood to constitute a drive circuit that drives the multiple light-emitting elements 201 of the pixel array 103. The multiple light-emitting elements 201 may be understood to include multiple first-type light-emitting elements and multiple second-type light-emitting elements. The drive circuit that drives the multiple light-emitting elements 201 of the pixel array 103 may be understood to include multiple first drive circuits that respectively drive the multiple first-type light-emitting elements and multiple second drive circuits that respectively drive the multiple second-type light-emitting elements. At least a portion of each of the multiple first drive circuits may be arranged on the second substrate 12, and at least a portion of each of the multiple second drive circuits may be arranged on the first substrate 11.

[0049] The first pixel 102-a includes a first-type light-emitting element 201-a, Vss 205, a driving transistor 202-a, a writing transistor 203-a, a first scan line 1061, a signal line 107-a, and Vdd 204. The driving transistor 202-a and the writing transistor 203-a constitute a first driving circuit that drives the first-type light-emitting element 201. The first-type light-emitting element 201-a is disposed on the second surface S2 of the first substrate 11, and Vss 205 is disposed in the first wiring structure 512. From another perspective, the first-type light-emitting element 201-a and Vss 205 are disposed in a first structure consisting of the first substrate 11 and the first wiring structure 512. The driving transistor 202-a and the writing transistor 203-a may be disposed on the second substrate 12, and the first scan line 1061, the signal line 107-a, and Vdd 204 may be disposed in the second wiring structure 522. In another aspect, the drive transistor 202-a, the write transistor 203-a, the first scan line 1061, the signal line 107-a, and Vdd 204 may be arranged in a second structure consisting of the second substrate 12 and the second wiring structure 522. The drive transistor 202-a may be understood as a transistor that determines the brightness level of the light-emitting element 201-a, a transistor that controls the current flowing through the light-emitting element 201-a, or a transistor that is directly connected to an electrode of the light-emitting element 201-a.

[0050] The second pixel 102-b includes a second-type light-emitting element 201-b, Vss 205, a driving transistor 202-b, a writing transistor 203-b, a second scan line 1062, a signal line 107-b, and Vdd 204. The driving transistor 202-b and the writing transistor 203-b constitute a second driving circuit that drives the second-type light-emitting element 201-b. The second-type light-emitting element 201-b may be disposed on the second surface S2 of the first substrate 11, and the driving transistor 202-b and the writing transistor 203-b may be disposed on the second substrate 12. Vss 205, the first scan line 1061, the signal line 107-b, and Vdd 204 may be disposed on the first wiring structure 512. From another perspective, the second type light-emitting element 201-b, Vss 205, driving transistor 202-b, writing transistor 203-b, second scan line 1062, signal line 107-b, and Vdd 204 may be arranged in a first structure consisting of the first substrate 11 and the first wiring structure 512. The driving transistor 202-b may be understood as a transistor that determines the luminance level of the light-emitting element 201-b, a transistor that controls the current flowing through the light-emitting element 201-b, or a transistor that is directly connected to an electrode of the light-emitting element 201-b.

[0051] An N-type well layer 506 may be disposed inside the first substrate 11. A portion of each of the drive transistor 202-b and the write transistor 203-b is disposed between the first substrate 11 and the first wiring structure 512. Note that the write transistor 203-b is not shown in FIG. 16. P-type diffusion regions 401 and 403 of the drive transistor 202-b are disposed in the first substrate 11, and a gate 402 of the drive transistor 202-b is disposed on the first surface S1 of the first substrate 11 via a gate insulating film. The drive transistor 202-b and the write transistor 203-b may be formed, for example, by a typical CMOS process.

[0052] An N-type well layer 507 and a P-type semiconductor layer 509 may be disposed on the second substrate 12. Portions of the drive transistor 202-a and the write transistor 203-a are disposed between the second substrate 12 and the second wiring structure 522. Note that the write transistor 203-a is not shown in FIG. 16. P-type diffusion regions 404 and 406 of the drive transistor 202-a are disposed on the second substrate 12, and a gate 405 of the drive transistor 202-a is disposed on the third surface S3 of the second substrate 12 via a gate insulating film. The drive transistor 202-a and the write transistor 203-a may be formed by a general CMOS process. The P-type diffusion regions 401 and 403 of the first substrate 11 and the P-type diffusion regions 404 and 406 of the second substrate 12 may differ from each other in at least one of concentration and depth.

[0053] As described above, in the seventh embodiment, the first pixel 102-a has a first drive circuit that drives the first type of light-emitting element 201-a, and at least a portion of the first drive circuit is disposed on the second substrate 12. Also, in the seventh embodiment, the second pixel 102-b has a second drive circuit that drives the second type of light-emitting element 201-b, and at least a portion of the second drive circuit is disposed on the first substrate 11. This reduces the area occupied by elements on each of the first substrate 11 and the second substrate 12. Therefore, the light-emitting device 101 of the seventh embodiment is advantageous for arranging light-emitting elements at high density without reducing the size of each transistor. Also, when the light-emitting device 101 is embodied as a display device, the seventh embodiment is advantageous for achieving high definition.

[0054] An application example of the light emitting device 101 will be described below.

[0055] The light emitting device 101 can be used as a component of a display device or a lighting device, and can also be used as an exposure light source for an electrophotographic image forming device, a backlight for a liquid crystal display device, a white light source, etc.

[0056] The display device may be an image information processing device that has an image input unit that inputs image information from an area CCD, a linear CCD, a memory card, etc., has an information processing unit that processes the input information, and displays the input image on the display unit.

[0057] The display unit of the imaging device or inkjet printer may have a touch panel function. The driving method of this touch panel function may be an infrared method, a capacitance method, a resistive film method, or an electromagnetic induction method, and is not particularly limited. The display device may also be used in the display unit of a multifunction printer.

[0058] Next, a display device according to one application example will be described with reference to the drawings.

[0059] 17 is a cross-sectional view showing an example of a display device having an organic light-emitting element and a transistor connected to the organic light-emitting element. The transistor is an example of an active element. The transistor may be a thin-film transistor (TFT).

[0060] FIG. 17(a) shows an example of a pixel, which is a component of a display device according to one application example. The pixel has sub-pixels 10. The sub-pixels are divided into 10R, 10G, and 10B based on their light emission. The emitted colors may be distinguished by the wavelength of light emitted from the light-emitting layer, or the light emitted from the sub-pixels may be selectively transmitted or color-converted using a color filter or the like. Each sub-pixel has a reflective electrode 2, which is a first electrode, on an interlayer insulating layer 1, an insulating layer 3 covering the edge of the reflective electrode 2, an organic compound layer 4 covering the first electrode and the insulating layer, a transparent electrode 5, a protective layer 6, and a color filter 7.

[0061] A transistor and a capacitor may be disposed below or inside the interlayer insulating layer 1. The transistor and the first electrode may be electrically connected via a contact hole or the like (not shown).

[0062] The insulating layer 3 is also called a bank or pixel separation film. It covers the edges of the first electrode and surrounds the first electrode. The part where the insulating layer is not provided contacts the organic compound layer 4 and becomes the light-emitting region.

[0063] The organic compound layer 4 includes a hole injection layer 41 , a hole transport layer 42 , a first light-emitting layer 43 , a second light-emitting layer 44 , and an electron transport layer 45 .

[0064] The second electrode 5 may be a transparent electrode, a reflective electrode, or a semi-transparent electrode.

[0065] The protective layer 6 reduces the penetration of moisture into the organic compound layer. Although the protective layer is illustrated as a single layer, it may be a multi-layer structure. Each layer may be an inorganic compound layer and an organic compound layer.

[0066] The color filters 7 are divided into 7R, 7G, and 7B depending on their colors. The color filters may be formed on a planarization film (not shown). A resin protective layer (not shown) may be provided on the color filters. The color filters may be formed on a protective layer 6. Alternatively, the color filters may be provided on an opposing substrate such as a glass substrate and then bonded thereto.

[0067] The light-emitting device 101 in Figure 17(b) includes an organic light-emitting element 26 and a TFT 18 as an example of a transistor. A substrate 11 made of glass, silicon, or the like is provided with an insulating layer 12 on top of it. An active element 18 such as a TFT is disposed on the insulating layer, and a gate electrode 13, a gate insulating film 14, and a semiconductor layer 15 of the active element are disposed on top of it. The TFT 18 also includes the semiconductor layer 15, a drain electrode 16, and a source electrode 17. An insulating film 19 is disposed on top of the TFT 18. An anode 21 constituting the organic light-emitting element 26 and the source electrode 17 are connected via a contact hole 20 provided in the insulating film.

[0068] The electrical connection between the electrodes (anode, cathode) included in the organic light-emitting element 26 and the electrodes (source electrode, drain electrode) included in the TFT is not limited to the embodiment shown in Fig. 17(b). In other words, it is sufficient that either the anode or the cathode is electrically connected to either the TFT source electrode or the drain electrode. TFT stands for thin film transistor.

[0069] 17(b), the organic compound layer 22 is illustrated as a single layer, but may be a multi-layer organic compound layer 22. A first protective layer 24 and a second protective layer 25 are provided on the cathode 23 to reduce deterioration of the organic light-emitting element.

[0070] In the display device 100 of FIG. 17(b), transistors are used as switching elements, but other switching elements may be used instead.

[0071] The transistors used in the display device 100 of Fig. 17(b) are not limited to transistors using single-crystal silicon wafers, but may also be thin-film transistors having an active layer on an insulating surface of a substrate. Examples of active layers include single-crystal silicon, amorphous silicon, microcrystalline silicon, and other non-single-crystal silicon, as well as non-single-crystal oxide semiconductors such as indium zinc oxide and indium gallium zinc oxide. Thin-film transistors are also called TFT elements.

[0072] The transistors included in the display device 100 of Fig. 17(b) may be formed within a substrate such as a Si substrate. Here, "formed within a substrate" means that the substrate itself, such as a Si substrate, is processed to form the transistors. In other words, having a transistor within a substrate can be seen as the substrate and the transistor being formed integrally.

[0073] The organic light-emitting element according to this embodiment has its emission brightness controlled by a TFT, which is an example of a switching element. By providing multiple organic light-emitting elements on a surface, an image can be displayed based on the emission brightness of each element. Note that the switching element according to this embodiment is not limited to a TFT, and may be a transistor formed from low-temperature polysilicon or an active matrix driver formed on a substrate such as a Si substrate. "On the substrate" can also be referred to as "inside the substrate." Whether to provide a transistor in the substrate or to use a TFT is determined by the size of the display unit. For example, for a display size of about 0.5 inches, it is preferable to provide the organic light-emitting element on a Si substrate.

[0074] 18 is a schematic diagram illustrating an example of a display device according to one application example. The display device 1000 may have a touch panel 1003, a display panel 1005, a frame 1006, a circuit board 1007, and a battery 1008 between an upper cover 1001 and a lower cover 1009. The touch panel 1003 and the display panel 1005 are connected by flexible printed circuits FPCs 1002 and 1004. Transistors are printed on the circuit board 1007. The battery 1008 may not be provided if the display device is not a portable device, and may be provided in a different position even if the display device is a portable device.

[0075] The display device may have color filters having red, green, and blue colors, the red, green, and blue colors being arranged in a delta configuration.

[0076] The display device may be used as a display unit of a mobile terminal. In this case, the display device may have both a display function and an operation function. Examples of the mobile terminal include a mobile phone such as a smartphone, a tablet, and a head-mounted display.

[0077] The display device may be used as a display unit of an imaging device having an optical unit with multiple lenses and an imaging element that receives light that has passed through the optical unit. The imaging device may have a display unit that displays information acquired by the imaging element. The display unit may be a display unit exposed to the outside of the imaging device or a display unit located within the viewfinder. The imaging device may be a digital camera or a digital video camera.

[0078] 19(a) is a schematic diagram showing an example of an imaging device according to one application example. The imaging device 1100 may have a viewfinder 1101, a rear display 1102, an operation unit 1103, and a housing 1104. The viewfinder 1101 may have a display device according to this embodiment. In this case, the display device may display not only an image to be captured, but also environmental information, imaging instructions, and the like. The environmental information may include the intensity of external light, the direction of external light, the speed at which the subject is moving, the possibility that the subject will be blocked by an obstruction, and the like.

[0079] Since the optimum timing for capturing an image is very short, it is better to display information as soon as possible. Therefore, it is preferable to use a display device using the organic light-emitting element of the present invention. This is because the organic light-emitting element has a fast response speed. A display device using an organic light-emitting element can be used more preferably than a liquid crystal display device, which requires a high display speed.

[0080] The imaging device 1100 has an optical section (not shown). The optical section has multiple lenses, which form an image on an imaging element housed in a housing 1104. The focus of the multiple lenses can be adjusted by adjusting their relative positions. This operation can also be performed automatically. The imaging device may also be called a photoelectric conversion device. Instead of sequentially capturing images, the photoelectric conversion device can include an imaging method that detects the difference from the previous image, or a method of cutting out an image from a constantly recorded image, etc.

[0081] FIG. 19(b) is a schematic diagram showing an example of an electronic device according to one application example. The electronic device 1200 has a display unit 1201, an operation unit 1202, and a housing 1203. The housing 1203 may have a circuit, a printed circuit board having the circuit, a battery, and a communication unit. The operation unit 1202 may be a button or a touch panel type reaction unit. The operation unit may be a biometric recognition unit that recognizes a fingerprint to perform unlocking or the like. An electronic device having a communication unit can also be called a communication device. The electronic device may further have a camera function by including a lens and an image sensor. An image captured by the camera function is displayed on the display unit. Examples of the electronic device include a smartphone and a laptop computer.

[0082] Fig. 20(a) is a schematic diagram showing an example of a display device according to one application example. Fig. 20(a) is a display device such as a television monitor or a PC monitor. The display device 1300 has a frame 1301 and a display unit 1302. The light-emitting device according to this embodiment may be used in the display unit 1302.

[0083] It has a frame 1301 and a base 1303 that supports a display unit 1302. The base 1303 is not limited to the form shown in Fig. 20(a). The bottom side of the frame 1301 may also serve as the base.

[0084] The frame 1301 and the display unit 1302 may be curved. The radius of curvature may be 5000 mm or more and 6000 mm or less.

[0085] FIG. 20(b) is a schematic diagram illustrating a display device according to one application example. The display device 1310 in FIG. 20(b) is configured to be bendable, and is a so-called foldable display device. The display device 1310 has a first display unit 1311, a second display unit 1312, a housing 1313, and a bending point 1314. The first display unit 1311 and the second display unit 1312 may include a light-emitting device according to this embodiment. The first display unit 1311 and the second display unit 1312 may be a single, seamless display unit. The first display unit 1311 and the second display unit 1312 can be separated by the bending point. The first display unit 1311 and the second display unit 1312 may each display different images, or the first and second display units may display a single image.

[0086] FIG. 21(a) is a schematic diagram showing an illumination device according to one application example. The illumination device 1400 may include a housing 1401, a light source 1402, a circuit board 1403, an optical film 1404, and a light diffusion unit 1405. The light source may include an organic light-emitting element according to this embodiment. The optical filter may be a filter that improves the color rendering of the light source. The light diffusion unit can effectively diffuse light from the light source, such as for illumination, and deliver the light over a wide area. The optical filter and the light diffusion unit may be provided on the light output side of the illumination device. If necessary, a cover may be provided on the outermost surface.

[0087] The lighting device is, for example, a device for illuminating a room. The lighting device may emit white, daylight white, or any other color from blue to red. It may have a dimming circuit for dimming these colors. The lighting device may have the organic light-emitting element of the present invention and a power supply circuit connected thereto. The power supply circuit is a circuit for converting AC voltage to DC voltage. Furthermore, white has a color temperature of 4200K, and daylight white has a color temperature of 5000K. The lighting device may have a color filter.

[0088] The lighting device according to this embodiment may also include a heat dissipation unit, which dissipates heat from within the device to the outside, and may be made of a material such as a metal with a high specific heat capacity or liquid silicon.

[0089] 21(b) is a schematic diagram of an automobile, which is an example of a moving body according to one application example. The automobile has tail lamps, which are an example of a lighting device. The automobile 1500 has tail lamps 1501, and may be configured to turn on the tail lamps when braking or the like is performed.

[0090] A tail lamp 1501 may include an organic light-emitting element according to this embodiment. The tail lamp may include a protective member for protecting the organic EL element. The protective member may be made of any material as long as it has a certain degree of strength and is transparent, but it is preferably made of polycarbonate or the like. Polycarbonate may be mixed with a furandicarboxylic acid derivative, an acrylonitrile derivative, or the like.

[0091] An automobile 1500 may have a body 1503 and a window 1502 attached thereto. The window may be a transparent display as long as it is not a window for checking the front and rear of the automobile. The transparent display may have an organic light-emitting element according to this embodiment. In this case, constituent materials of the electrodes and the like of the organic light-emitting element are made of transparent materials.

[0092] The moving body according to this embodiment may be a ship, an aircraft, a drone, or the like. The moving body may have a body and a lighting device provided on the body. The lighting device may emit light to indicate the position of the body. The lighting device has the organic light-emitting element according to this embodiment.

[0093] 22(a) and 22(b) , an application example of the display device will be described. The display device can be applied to a system that can be attached as a wearable device, such as smart glasses, an HMD, or a smart contact lens. The image capturing and display device used in such an application example has an image capturing device capable of photoelectrically converting visible light and a display device capable of emitting visible light.

[0094] 22(a) illustrates glasses 1600 (smart glasses) according to one application example. An imaging device 1602 such as a CMOS sensor or SPAD is provided on the front side of a lens 1601 of the glasses 1600. Furthermore, a display device according to any of the above-described embodiments is provided on the back side of the lens 1601.

[0095] The glasses 1600 further include a control device 1603. The control device 1603 functions as a power source that supplies power to the image capture device 1602 and the display device according to each embodiment. The control device 1603 also controls the operations of the image capture device 1602 and the display device. The lens 1601 is formed with an optical system for focusing light onto the image capture device 1602.

[0096] FIG. 22(b) illustrates glasses 1610 (smart glasses) according to one application example. The glasses 1610 include a control device 1612, which is equipped with an imaging device equivalent to the imaging device 1602 and a display device. A lens 1611 includes an optical system for projecting light emitted from the imaging device and the display device within the control device 1612, and an image is projected onto the lens 1611. The control device 1612 functions as a power source for supplying power to the imaging device and the display device and controls the operation of the imaging device and the display device. The control device may also include a gaze detection unit for detecting the wearer's gaze. Infrared light may be used for gaze detection. The infrared light emitter emits infrared light toward the eyeball of a user gazing at a displayed image. An imaging unit with a light receiving element detects the reflected light of the emitted infrared light from the eyeball, thereby obtaining an image of the eyeball. A reduction unit for reducing light from the infrared light emitter to the display unit in a planar view reduces degradation of image quality.

[0097] The gaze of the user relative to the displayed image is detected from an image of the eyeball obtained by capturing infrared light. Any known method can be used for gaze detection using an image of the eyeball. One example is a gaze detection method based on the Purkinje image formed by reflection of irradiated light on the cornea.

[0098] More specifically, gaze detection processing is performed based on the pupil-corneal reflex method, which calculates a gaze vector representing the direction (rotation angle) of the eyeball based on the pupil image and Purkinje image included in the captured image of the eyeball, thereby detecting the user's gaze.

[0099] A display device according to an embodiment of the present invention may have an imaging device having a light receiving element, and may control the image displayed on the display device based on information about the user's line of sight from the imaging device.

[0100] Specifically, the display device determines a first field of view area where the user gazes and a second field of view area other than the first field of view area based on the line-of-sight information. The first field of view area and the second field of view area may be determined by a control device of the display device, or may be determined by an external control device and received. In the display area of ​​the display device, the display resolution of the first field of view area may be controlled to be higher than the display resolution of the second field of view area. In other words, the resolution of the second field of view area may be lower than that of the first field of view area.

[0101] The display area includes a first display area and a second display area different from the first display area, and a high-priority area is determined from the first display area and the second display area based on line-of-sight information. The first field of view area and the second field of view area may be determined by a control device of the display device, or may be determined by an external control device and received. The resolution of the high-priority area may be controlled to be higher than the resolution of areas other than the high-priority area. In other words, the resolution of an area with a relatively low priority may be lowered.

[0102] Note that AI may be used to determine the first field of view area and areas with high priority. The AI ​​may be a model configured to estimate the angle of gaze and the distance to an object in the line of sight from an image of the eyeball, using as training data an image of the eyeball and the direction in which the eyeball in the image was actually looking. The AI ​​program may be included in the display device, the imaging device, or an external device. If included in an external device, it is transmitted to the display device via communication.

[0103] When display control is performed based on visual recognition detection, the smart glasses can be preferably applied to smart glasses that further include an imaging device for capturing images of the outside world. The smart glasses can display captured external information in real time.

[0104] As described above, by using a device using the organic light-emitting element according to this embodiment, it is possible to provide a stable display with good image quality even over a long period of time.

[0105] The invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0106] 11: first substrate, 12: second substrate, 102: pixel, 201: light emitting element, 202: drive transistor, 203: write transistor

Claims

1. A light emitting device having a structure in which a first semiconductor substrate and a second semiconductor substrate are stacked, a plurality of light-emitting elements; and a drive circuit that drives the plurality of light-emitting elements; the drive circuit includes a first transistor, a second transistor, and a third transistor; the first transistor and the second transistor are disposed on the first semiconductor substrate, and the third transistor is disposed on the second semiconductor substrate; the first transistor is a transistor for supplying a current corresponding to a signal input via a signal line to one of the plurality of light-emitting elements, the second transistor is a transistor for inputting the signal to a node of the first transistor, the third transistor is a transistor for controlling a connection between a voltage line and the first transistor and for controlling light emission / non-emission of the one light-emitting element; A light-emitting device characterized by:

2. the second transistor is a transistor for writing the signal to the node including the gate of the first transistor; 2. The light emitting device according to claim 1.

3. the first semiconductor substrate has a first surface and a second surface that are opposite to each other, and the second semiconductor substrate has a third surface and a fourth surface that are opposite to each other; a first wiring structure is disposed so as to contact the first surface, and a second wiring structure is disposed so as to contact the third surface; the first wiring structure and the second wiring structure are coupled together; the plurality of light-emitting elements are arranged on the second surface, at least a portion of the first transistor and the second transistor is disposed between the first surface and the first wiring structure; at least a portion of the third transistor is disposed between the third surface and the second wiring structure; 3. The light emitting device according to claim 1, wherein the light emitting device is a light emitting device.

4. a conductive path is provided in the first semiconductor substrate, the conductive path passing through the first semiconductor substrate so as to connect the first transistor and the one light emitting element; 4. The light emitting device according to claim 3.

5. the first semiconductor substrate has a through-hole, and the conductive path includes a conductive plug disposed in the through-hole with an insulating film interposed therebetween; 5. The light emitting device according to claim 4.

6. the conductive path includes an impurity semiconductor region disposed so as to penetrate the first semiconductor substrate; 5. The light emitting device according to claim 4.

7. The impurity semiconductor region is surrounded by an insulating film.

7. The light emitting device according to claim 6.

8. the plurality of light-emitting elements are arranged to form a plurality of rows and a plurality of columns, A plurality of signal lines extending along the column direction are provided for each column.

8. The light emitting device according to claim 1, wherein the light emitting device is a light emitting device.

9. the first transistor has a self-biased back gate; 9. The light emitting device according to claim 1, wherein the light emitting device comprises: a first insulating layer;

10. the drive circuit includes a first capacitance element arranged to electrically connect the first transistor to a connection node between the first transistor and the third transistor, and a second capacitance element arranged to electrically connect the voltage line to the connection node.

9. The light emitting device according to claim 1, wherein the light emitting device is a light emitting device.

11. the first capacitance element and the second capacitance element are disposed on the first semiconductor substrate; 11. The light emitting device according to claim 10.

12. the drive circuit further includes a reset transistor that resets a potential of a connection node between the one light-emitting element and the first transistor; 12. The light emitting device according to claim 10 or 11.

13. the plurality of light-emitting elements include a plurality of first-type light-emitting elements and a plurality of second-type light-emitting elements; The first type of light-emitting element and the second type of light-emitting element are configured to express different colors from each other.

13. The light emitting device according to claim 1, wherein the light emitting device is a light emitting device.

14. the first type light-emitting element and the second type light-emitting element are arranged adjacent to each other; 14. The light emitting device according to claim 13.

15. configured as a display device, 15. The light emitting device according to claim 1.

16. an imaging element that receives light that has passed through an optical unit; and a display unit that displays an image captured by the imaging element; The display unit includes the light-emitting device according to any one of claims 1 to 14. A photoelectric conversion device characterized by:

17. 15. A light emitting device comprising: the light emitting device according to claim 1; a housing in which the light emitting device is provided; and a communication unit provided in the housing for communicating with an external device. An electronic device characterized by:

18. 15. A light emitting device comprising: the light emitting device according to claim 1; and a light diffusing section or an optical film that transmits light emitted by the light emitting device. A lighting device characterized by:

19. A lighting fixture including the light-emitting device according to any one of claims 1 to 14, and a vehicle on which the lighting fixture is provided. A moving object characterized by:

Images