Image sensor with color separation lens array and electronic device including the same

Abstract

To provide an image sensor including a color separation lens array.SOLUTION: An image sensor includes: a sensor substrate including a first photosensitive cell and a second photosensitive cell for sensing light;, a color separation lens array for changing the phases of first and second wavelength light so as to be different from each other so that the first wavelength light in the incident light advances to the first photosensitive cell and the second wavelength light advances to the second photosensitive cell; and a spectrum correction layer disposed between a plurality of nanostructures with a first refractive index, including a dielectric body with a second refractive index, disposed between the sensor substrate and the color separation lens array, and correcting the spectrum distribution of the light entering the sensor substrate by reflecting and / or absorbing a part of light having passed the color separation lens array.SELECTED DRAWING: Figure 4A

Description

[Technical Field]

[0001] The present invention relates to an image sensor having a color separation lens array capable of separating and focusing incident light according to wavelength, and an electronic device including the image sensor. [Background technology]

[0002] Image sensors typically use color filters to detect the color of incident light, but color filters absorb light of colors other than the one they detect, resulting in reduced light utilization efficiency. For example, when using an RGB color filter, only one-third of the incident light is transmitted and the remaining two-thirds is absorbed, resulting in a light utilization efficiency of only about 33%. Therefore, in color display devices and color image sensors, most of the light loss occurs in the color filters. Summary of the Invention [Problem to be solved by the invention]

[0003] The present invention provides an image sensor and an electronic device including the image sensor, which have improved light utilization efficiency and color reproducibility by using a color separation lens array that can separate and condense incident light according to wavelength and a spectral correction layer that corrects the spectral distribution of each color. [Means for solving the problem]

[0004] According to an embodiment, an image sensor includes: a sensor substrate including first and second photosensitive cells for detecting light; a color separation lens array for changing phases of light of a first wavelength included in incident light so that the light of the first wavelength enters the first photosensitive cells and the light of the second wavelength enters the second photosensitive cells; and a spectral correction layer for correcting a spectral distribution of light incident on the sensor substrate by reflecting and / or absorbing a portion of the light that has passed through the color separation lens array, the spectral correction layer including a plurality of nanostructures having a first refractive index and a dielectric material disposed between the nanostructures and having a second refractive index.

[0005] According to an embodiment, an electronic device includes an image sensor that converts an optical image into an electrical signal, and a processor that controls the operation of the image sensor and stores and outputs the signal generated by the image sensor. The image sensor includes: a sensor substrate including first and second photosensitive cells that detect light; a color separation lens array that changes phases of light with a first wavelength and light with a second wavelength included in the incident light to be different from each other so that light with a first wavelength enters the first photosensitive cells and light with a second wavelength enters the second photosensitive cells; and a spectral correction layer that includes a plurality of nanostructures having a first refractive index and a dielectric material having a second refractive index and is disposed between the nanostructures, and that corrects a spectral distribution of light incident on the sensor substrate by reflecting and / or absorbing a portion of light that has passed through the color separation lens array. [Brief explanation of the drawings]

[0006] [Figure 1] FIG. 1 is a block diagram of an image sensor according to an embodiment. [Figure 2A] 1 illustrates various exemplary pixel arrangements of a pixel array of an image sensor. [Figure 2B] 1 illustrates various exemplary pixel arrangements of a pixel array of an image sensor. [Figure 2C] 1 illustrates various exemplary pixel arrangements of a pixel array of an image sensor. [Figure 3A]1 is a conceptual diagram showing the general structure and operation of a color separation lens array according to an embodiment. [Figure 3B] 1 is a conceptual diagram showing the general structure and operation of a color separation lens array according to an embodiment. [Figure 4A] 2A-2C are schematic cross-sectional views taken at different cross sections of a pixel array of an image sensor according to one embodiment; [Figure 4B] 2A-2C are schematic cross-sectional views taken at different cross sections of a pixel array of an image sensor according to one embodiment; [Figure 5A] FIG. 2 is a plan view schematically illustrating an arrangement of photosensitive cells. [Figure 5B] 10 is a plan view illustrating an example of the arrangement of nanoposts in a color separation lens array. FIG. [Figure 5C] FIG. 5C is an enlarged plan view showing a portion of FIG. 5B in detail. [Figure 6A] 5C is a diagram showing the phase distribution of first and second wavelength light beams that have passed through a color separation lens array, taken along line II' of FIG. 5B. [Figure 6B] 10 is a diagram showing the phase of first wavelength light that has passed through a color separation lens array at the centers of first to fourth regions. [Figure 6C] 10 is a diagram showing the phases of second wavelength light that has passed through a color separation lens array at the centers of first to fourth regions. [Figure 6D] 6C is a diagram illustrating an example of a first region of the color separation lens array of FIGS. 6A and 6B and the traveling direction of first wavelength light incident on the periphery thereof; [Figure 6E] 10 is a diagram illustrating an example of a microlens array that functions equivalently to a color separation lens array for first wavelength light. [Figure 6F] 6C is a diagram illustrating an example of a traveling direction of second wavelength light incident on a second region of the color separation lens array of FIGS. 6A and 6B and its periphery; [Figure 6G] 10 is a diagram illustrating an example of a microlens array that functions equivalently to a color separation lens array for second wavelength light. [Figure 7A]5C is a diagram showing the phase distribution of the first and third wavelength light beams that have passed through the color separation lens array, taken along line II-II' in FIG. 5B. [Figure 7B] 10 is a diagram showing the phase of third wavelength light that has passed through a color separation lens array at the centers of first to fourth regions. [Figure 7C] 10 is a diagram showing the phase of first wavelength light that has passed through a color separation lens array at the centers of first to fourth regions. [Figure 7D] 7C is a diagram illustrating an example of a traveling direction of first wavelength light incident on a first region of the color separation lens array of FIGS. 7A and 7B and its periphery; [Figure 7E] 10 is a diagram illustrating an example of a microlens array that functions equivalently to a color separation lens array for first wavelength light. [Figure 7F] 7C is a diagram illustrating an example of a traveling direction of second wavelength light incident on a second region of the color separation lens array of FIGS. 7A and 7B and its periphery; [Figure 7G] 10 is a diagram illustrating an example of a microlens array that functions equivalently to a color separation lens array for second wavelength light. [Figure 8] 4C is a diagram showing the spectrum of light incident on a sensor substrate through a color separation lens array when a spectral correction layer is not provided in the pixel array of FIGS. 4A and 4B. [Figure 9A] 10 is a diagram showing another embodiment of a color separation lens array. [Figure 9B] 10 is a diagram showing another embodiment of a color separation lens array. [Figure 10A] FIG. 4C is a perspective view of the first correction unit of FIGS. 4A and 4B. [Figure 10B] FIG. 10B is a cross-sectional view taken along line III-III' in FIG. 10A. [Figure 10C] 10B is a graph showing the transmittance of the first corrector of FIG. 10A. [Figure 10D] 10 is a graph showing the transmittance of an organic color filter disposed in a green pixel. [Figure 10E] 10B is a diagram showing a first spectrum corrected by the first corrector of FIG. 10A; [Figure 11A] FIG. 4C is a perspective view of the second correction unit of FIGS. 4A and 4B. [Figure 11B] FIG. 11B is a cross-sectional view taken along line IV-IV′ in FIG. 11A. [Figure 11C] 11B is a graph showing the transmittance of the second corrector of FIG. 11A. [Figure 11D] 10 is a graph showing the transmittance of an organic color filter disposed in a blue pixel. [Figure 11E] 11B is a diagram showing a second spectrum corrected by the second corrector of FIG. 11A. [Figure 12A] FIG. 4C is a perspective view of the third correction unit of FIGS. 4A and 4B. [Figure 12B] FIG. 12B is a cross-sectional view taken along line VV' in FIG. 12A. [Figure 12C] 12B is a graph showing the transmittance of the third corrector of FIG. 12A. [Figure 12D] 10 is a graph showing the transmittance of an organic color filter disposed in a green pixel. [Figure 12E] 12B is a diagram showing a fourth spectrum corrected by the third corrector of FIG. 12A. [Figure 13] 4A and 4B, in which a spectral correction layer is provided, that is, a diagram showing the spectrum of light incident on a sensor substrate through a color separation lens array and a spectral correction layer. [Figure 14A] 10 is a diagram illustrating another embodiment of a spectral correction layer. [Figure 14B] 10 is a diagram illustrating another embodiment of a spectral correction layer. [Figure 14C] 10 is a diagram illustrating another embodiment of a spectral correction layer. [Figure 15A] 10A-10C are schematic diagrams showing different cross-sectional views of a pixel array according to another example; [Figure 15B] 10A-10C are schematic diagrams showing different cross-sectional views of a pixel array according to another example; [Figure 16A] 15C is a schematic cross-sectional view of the optical filter layer of FIGS. 15A and 15B. FIG. [Figure 16B]16B is a graph showing the transmittance of the optical filter layer of FIG. 16A by wavelength. [Figure 17] 15C is a diagram showing the spectrum of light incident on a sensor substrate in the pixel array of FIGS. 15A and 15B. [Figure 18] 1 is a block diagram that schematically illustrates an electronic device including an image sensor according to an embodiment. [Figure 19] FIG. 19 is a block diagram illustrating the camera module of FIG. 18. [Figure 20] 1 is a diagram illustrating various examples of electronic devices to which an image sensor according to an embodiment is applied; [Figure 21] 1 is a diagram illustrating various examples of electronic devices to which an image sensor according to an embodiment is applied; [Figure 22] 1 is a diagram illustrating various examples of electronic devices to which an image sensor according to an embodiment is applied; [Figure 23] 1 is a diagram illustrating various examples of electronic devices to which an image sensor according to an embodiment is applied; [Figure 24] 1 is a diagram illustrating various examples of electronic devices to which an image sensor according to an embodiment is applied; [Figure 25] 1 is a diagram illustrating various examples of electronic devices to which an image sensor according to an embodiment is applied; [Figure 26] 1 is a diagram illustrating various examples of electronic devices to which an image sensor according to an embodiment is applied; [Figure 27] 1 is a diagram illustrating various examples of electronic devices to which an image sensor according to an embodiment is applied; [Figure 28] 1 is a diagram illustrating various examples of electronic devices to which an image sensor according to an embodiment is applied; [Figure 29] 1 is a diagram illustrating various examples of electronic devices to which an image sensor according to an embodiment is applied; DETAILED DESCRIPTION OF THE INVENTION

[0007] Hereinafter, an image sensor having a color separation lens array and an electronic device including the same will be described in detail with reference to the accompanying drawings. The described embodiments are merely exemplary, and various modifications are possible from such embodiments. In the following drawings, the same reference numerals refer to the same components, and the size of each component may be exaggerated in the drawings for clarity and convenience of explanation.

[0008] Hereinafter, the term "top" or "above" includes not only what is in contact and directly above / below / left / right, but also what is not in contact and is above / below / left / right.

[0009] Terms such as first, second, etc. may be used to describe various components, but are used only to distinguish one component from another, and such terms do not limit the differences in material or structure of the components.

[0010] The singular expressions include the plural expressions unless the context clearly dictates otherwise. Furthermore, when a part "comprises" a certain element, this does not mean that other elements are excluded, but that other elements may also be included, unless otherwise specified to the contrary.

[0011] In addition, terms such as "unit" and "module" used in the specification refer to a unit that processes a function or operation, and may be implemented by hardware or software, or by a combination of hardware and software.

[0012] The use of "the" and similar directives also applies to both the singular and the plural.

[0013] The steps constituting the method are performed in the order of the description unless there is an explicit reference to performing them in the order of description. Furthermore, the use of all exemplary terms (such as, for example, etc.) is merely for the purpose of explaining the technical idea in detail, and does not limit the scope of the right by such terms, except as limited by the claims.

[0014] 1 is a schematic block diagram of an image sensor according to an embodiment. Referring to FIG. 1, an image sensor 1000 includes a pixel array 1100, a timing controller 1010, a row decoder 1020, and an output circuit 1030. The image sensor may be a charge coupled device (CCD) image sensor or a complementary metal oxide semiconductor (CMOS) image sensor that converts an optical image into an electrical signal.

[0015] The pixel array 1100 includes pixels arranged two-dimensionally along a plurality of rows and columns. The row decoder 1020 selects one of the rows of the pixel array 1100 in response to a row address signal output from the timing controller 1010. The output circuit 1030 outputs a photo-sensing signal in units of columns from a plurality of pixels arranged along the selected row. To this end, the output circuit 1030 includes a column decoder and an analog-to-digital converter (ADC). For example, the output circuit 1030 includes a plurality of ADCs arranged for each column between the column decoder and the pixel array 1100, or a single ADC arranged at the output end of the column decoder. The timing controller 1010, the row decoder 1020, and the output circuit 1030 may be implemented on a single chip or on separate chips. A processor for processing the image signal output via the output circuit 1030 may be implemented on a single chip together with the timing controller 1010, the row decoder 1020, and the output circuit 1030.

[0016] The pixel array 1100 includes a plurality of pixels that sense light of different wavelengths. The pixel arrangement may be implemented in various ways. For example, Figures 2A to 2C illustrate various pixel arrangements of the pixel array 1100.

[0017] First, FIG. 2A shows a Bayer pattern commonly used in image sensors 1000. Referring to FIG. 2A, one unit pattern includes four quadrant regions, and the first through fourth quadrants are blue pixels B, green pixels G, red pixels R, and green pixels G, respectively. Such unit patterns are two-dimensionally repeated along a first direction (X direction) and a second direction (Y direction). That is, within a 2×2 array of unit patterns, two green pixels G are arranged diagonally on one side, and one blue pixel B and one red pixel R are arranged diagonally on the other side. The pixel arrangement as a whole is repeated along the second direction, with a first row in which a plurality of green pixels G and a plurality of blue pixels B are alternately arranged along the first direction, and a second row in which a plurality of red pixels R and a plurality of green pixels G are alternately arranged along the first direction.

[0018] The pixel array 1100 may be arranged in various ways other than the Bayer pattern. For example, referring to FIG. 2B, a CYGM type arrangement is possible in which a magenta pixel M, a cyan pixel C, a yellow pixel Y, and a green pixel G form one unit pattern. Referring to FIG. 2C, a RGBW type arrangement is also possible in which a green pixel G, a red pixel R, a blue pixel B, and a white pixel W form one unit pattern. Although not shown, the unit pattern may have a 3x2 array shape. Alternatively, the pixels of the pixel array 1100 may be arranged in various ways depending on the color characteristics of the image sensor 1000. Hereinafter, the pixel array 1100 of the image sensor 1000 is described as having a Bayer pattern, but the operating principle may also be applied to pixel arrays of other types than the Bayer pattern.

[0019] The pixel array 1100 of the image sensor 1000 may include a color separation lens array that collects light of a color corresponding to each pixel. Figures 3A and 3B are conceptual diagrams showing the structure and operation of a color separation lens array.

[0020] Referring to FIG. 3A, the color separation lens array 130 may include nanoposts NP that change the phase of the incident light Li differently depending on the incident position. λ1 The first region 131 corresponds to the first target region R1, where the second wavelength light L included in the incident light Li is collected. λ2 The first and second regions 131, 132 may each include one or more nanoposts NPs and may be positioned to face the first and second target regions R1, R2, respectively.

[0021] The color separation lens array 130 separates the first and second wavelength lights L included in the incident light Li. λ1 , L λ2 and form different phase distributions in the first wavelength light L λ1 to the first target area R1, and the second wavelength light L λ2 can be focused onto the second target area R2.

[0022] For example, referring to FIG. 3B, the color separation lens array 130 separates the first wavelength light L 1 from the first wavelength light L 2 at a position immediately after passing through the color separation lens array 130, i.e., at the position of the lower surface of the color separation lens array 130. λ1 has a first phase distribution PP1, and the second wavelength light L λ2 has a second phase distribution PP2, and the first and second wavelength light L λ1 , L λ2 For example, the first wavelength light L λ1 may have a phase distribution PP1 that is greatest at the center of the first region 131 and decreases in the direction away from the center of the first region 131, i.e., toward the second region 132. Such a phase distribution is similar to the phase distribution of light that passes through a convex lens, for example, a microlens with a convex center, and converges to one point. λ1 The second wavelength light L that has passed through the color separation lens array 130 can be focused on the first target area R1. λ2has a phase distribution PP2 that is greatest at the center of the second region 132 and decreases in the direction away from the center of the second region 132, i.e., toward the first region 131, and can be focused on the second target region R2.

[0023] Since the refractive index of a material varies depending on the wavelength of light to which it responds, as shown in FIG. 3B, the color separation lens array 130 separates the first and second wavelength lights L λ1 , L λ2 That is, even if the material is the same, the refractive index varies depending on the wavelength of light that reacts with the material, and the phase delay applied to the light when passing through the material also varies depending on the wavelength, so different phase distributions can be formed for each wavelength. For example, λ1 and the refractive index for the second wavelength light L λ2 The refractive indexes for the first wavelength light L that has passed through the first region 131 are different from each other. λ1 and the phase delay applied to the second wavelength light L that has passed through the first region 131. λ2 Since the phase delays applied to the first and second wavelength lights L are different, the color separation lens array 130 designed in consideration of the characteristics of such light can separate the first and second wavelength lights L λ1 , L λ2 can provide different phase distributions for

[0024] The color separation lens array 130 separates the first and second wavelength light L λ1 , L λ2 The nanopost NPs are arranged according to a specific rule so that they have first and second phase distributions PP1 and PP2, respectively. Here, the rule applies to parameters such as the shape, size (width, height), spacing, and arrangement of the nanopost NPs, and these parameters can be determined by the phase profile to be realized through the color separation lens array 130.

[0025] The order in which the nanopost NPs are arranged in the first region 131 and the order in which they are arranged in the second region 132 are also different from each other. That is, the shape, size, spacing, and / or arrangement of the nanopost NPs provided in the first region 131 are also different from the shape, size, spacing, and / or arrangement of the nanopost NPs provided in the second region 132.

[0026] The nanopost NP may have a cross-sectional diameter of subwavelength. Here, subwavelength refers to a wavelength smaller than the wavelength band of the light to be split. The nanopost NP may have a dimension smaller than the shorter of the first and second wavelengths. When the incident light Li is visible light, the cross-sectional diameter of the nanopost NP may be, for example, smaller than 400 nm, 300 nm, or 200 nm. Meanwhile, the height of the nanopost NP is 500 nm to 1500 nm and may be larger than the cross-sectional diameter. Although not shown, the nanopost NP may also be formed by combining two or more posts stacked in the height direction (Z direction).

[0027] Nanopost NPs can be made of a material with a higher refractive index than the surrounding material. For example, nanopost NPs include c-Si, p-Si, a-Si, III-V compound semiconductors (e.g., GaP, GaN, GaAs), SiC, TiO, SiN, and / or combinations thereof. Nanopost NPs with a refractive index different from that of the surrounding material can change the phase of light passing through the nanopost NP. This is due to the phase delay caused by the subwavelength shape of the nanopost NPs, and the degree of phase delay is determined by the detailed shape and arrangement of the nanopost NPs. The material surrounding the nanopost NPs can be made of a dielectric material with a lower refractive index than the nanopost NPs, such as SiO or air.

[0028] The first and second wavelengths are in the visible light wavelength range, but are not limited thereto, and operation at various wavelengths is possible depending on the arrangement of the nanopost NPs. Also, although the example shows two wavelengths being branched and focused, incident light can be branched and focused in three or more directions depending on the wavelength.

[0029] An example in which the above-described color separation lens array 130 is applied to the pixel array 1100 of the image sensor 1000 will now be described in more detail.

[0030] 4A and 4B are schematic diagrams showing different cross sections of an example pixel array, FIG. 5A is a plan view showing the arrangement of photosensitive cells in the pixel array, FIG. 5B is a plan view showing an example of the arrangement of nanoposts in a color separation lens array, and FIG. 5C is a plan view showing an enlarged detail of a portion of FIG. 5B.

[0031] 4A and 4B, the pixel array 1100 includes a sensor substrate 110 including a plurality of photosensitive cells 111, 112, 113, and 114 that sense light, a spectral correction layer 150 disposed on the sensor substrate 110, a transparent spacer layer 120 disposed on the spectral correction layer 150, and a color separation lens array 130 disposed on the spacer layer 120.

[0032] The sensor substrate 110 includes first to fourth photosensitive cells 111, 112, 113, and 114 that convert light into electrical signals. As shown in FIG. 4A, the first and second photosensitive cells 111 and 112 may be alternately arranged along a first direction (X direction), and the third and fourth photosensitive cells 113 and 114 may be alternately arranged along a cross section at a different position in the Y direction, as shown in FIG. 4B. FIG. 5A illustrates an arrangement of photosensitive cells when the pixel array 1100 has a Bayer pattern as shown in FIG. 2A. This arrangement is for dividing incident light into unit patterns such as the Bayer pattern and sensing the light. For example, the first and fourth photosensitive cells 111 and 114 may sense light of a first wavelength, the second photosensitive cell 112 may sense light of a second wavelength, and the third photosensitive cell 113 may sense light of a third wavelength. Hereinafter, the first wavelength light is exemplified as green light, the second wavelength light as blue light, and the third wavelength light as red light, and the first and fourth photosensitive cells 111 and 114 correspond to green pixels G, the second photosensitive cell 112 corresponds to blue pixels B, and the third photosensitive cell 113 corresponds to red pixels R. Although not shown, a separation film for separating cells may be further formed at the boundary between the cells.

[0033] The spectral correction layer 150 can perform spectrum shaping by absorbing and / or reflecting a portion of the light split by the color separation lens array 130 before it enters each of the photosensitive cells 111, 112, 113, and 114. The spectral correction layer 150 includes first to third correctors 151, 152, and 153 corresponding to the green, blue, and red pixels G, B, and R. For example, the spectral correction layer 150 includes a first corrector 151 disposed on the first and fourth photosensitive cells 111 and 114 corresponding to the green pixel G, a second corrector 152 disposed on the second photosensitive cell 112 corresponding to the blue pixel B, and a third corrector 153 disposed on the third photosensitive cell 113 corresponding to the red pixel R. Although the embodiment of FIGS. 4A and 4B illustrates a structure in which the spectral correction layer 150 is formed on all the photosensitive cells, the spectral correction layer 150 may be formed only on some of the photosensitive cells. For example, the first corrector 151 is disposed only over the first and fourth photosensitive cells 111 and 114, and the spectral correcting layer 150 is not disposed over the second and third photosensitive cells 112 and 113. The detailed structures of the first to third correctors 151, 152, and 153 will be described later with reference to FIGS. 10A to 12E.

[0034] The spacer layer 120 is disposed between the sensor substrate 110 and the color separation lens array 130, and serves to maintain a constant distance between the sensor substrate 110 and the color separation lens array 130. The spacer layer 120 may be made of a material transparent to visible light, for example, a dielectric material having a refractive index lower than that of the nanopost NPs and low absorption in the visible light band, such as SiO2 or siloxane-based spin-on glass (SOG). The spectral correction layer 150 described above may also be embedded inside the spacer layer 120. The thickness h of the spacer layer 120 is h t - p ≦ h ≦ h t + p, where the theoretical thickness of the spacer layer 120 is h t When the refractive index of the spacer layer 120 for the wavelength λ0 is n and the pitch of the photosensitive cells is p, this can be expressed by the following Equation 1:

[0035]

number

[0036] The theoretical thickness h of the spacer layer 120 t means the focal length at which light having a wavelength of λ0 is focused onto the upper surfaces of the photosensitive cells 111, 112, 113, and 114 by the color separation lens array 130. λ0 is also a wavelength that serves as a reference for determining the thickness h of the spacer layer 120, and the thickness of the spacer layer 120 can be designed based on 540 nm, which is the central wavelength of green light.

[0037] The color separation lens array 130 is supported by the spacer layer 120, is disposed between the nanopost NPs that change the phase of incident light, and includes a dielectric material with a lower refractive index than the nanopost NPs, such as air or SiO 2 .

[0038] 5B, the color separation lens array 130 may be divided into first to fourth regions 131, 132, 133, and 134 corresponding to the first to fourth photosensitive cells 111, 112, 113, and 114 of FIG. 5A. The first to fourth regions 131, 132, 133, and 134 may be arranged to face the first to fourth photosensitive cells 111, 112, 113, and 114, respectively. For example, the first region 131 of the color separation lens array 130 may be arranged to correspond to the first photosensitive cell 111, the second region 132 may be arranged to correspond to the second photosensitive cell 112, the third region 133 may be arranged to correspond to the third photosensitive cell 113, and the fourth region 134 may be arranged to correspond to the fourth photosensitive cell 114. The first to fourth regions 131, 132, 133, and 134 may be two-dimensionally arranged along a first direction (X direction) and a second direction (Y direction) such that a first row in which the first and second regions 131, 132 are alternately arranged and a second row in which the third and fourth regions 133, 134 are alternately arranged are alternately repeated. Like the photosensitive cell array of the sensor substrate 110, the color separation lens array 130 also includes a plurality of unit patterns arranged two-dimensionally, and each unit pattern includes the first to fourth regions 131, 132, 133, and 134 arranged in a 2×2 pattern.

[0039] Although FIGS. 4A and 4B illustrate an example in which the first to fourth regions 131, 132, 133, and 134 and the first to fourth photosensitive cells 111, 112, 113, and 114 have the same size and are arranged vertically opposite to each other, the color separation lens array 130 may be divided into a plurality of regions defined in other ways, such as a region for collecting light of a first wavelength and a region for collecting light of a second wavelength.

[0040] The color separation lens array 130 includes nanoposts NPs whose size, shape, spacing, and / or arrangement are determined so that light of the first wavelength is branched and focused at the first photosensitive cell 111 and the fourth photosensitive cell 114, light of the second wavelength is branched and focused at the second photosensitive cell 112, and light of the third wavelength is branched and focused at the third photosensitive cell 113. Meanwhile, the thickness (in the Z direction) of the color separation lens array 130 is similar to the height of the nanoposts NPs and is 500 nm to 1500 nm.

[0041] 5B, the first through fourth regions 131, 132, 133, and 134 may include cylindrical nanopost NPs with circular cross sections, with nanopost NPs with different cross-sectional areas disposed at the center of each region, and nanopost NPs may also be disposed at the centers of inter-pixel boundaries and at intersections of pixel boundaries, with the cross-sectional areas of the nanopost NPs disposed at the inter-pixel boundaries being smaller than those disposed at the center of the pixels.

[0042] FIG. 5C shows in detail the arrangement of nanoposts NPs included in a portion of FIG. 5B, i.e., the first through fourth regions 131, 132, 133, and 134 constituting the unit pattern. In FIG. 5C, the nanoposts NPs are labeled p1 through p9 according to their detailed positions in the unit pattern. Referring to FIG. 5C, the cross-sectional areas of nanopost p1 located at the center of first region 131 and nanopost p4 located at the center of fourth region 134 are larger than the cross-sectional areas of nanopost p2 located at the center of second region 132 and nanopost p3 located at the center of third region 133, and the cross-sectional area of ​​nanopost p2 located at the center of second region 132 is larger than the cross-sectional area of ​​nanopost p3 located at the center of third region 133. However, this is merely an example, and nanoposts NPs of various shapes, sizes, and arrangements may be applied as needed.

[0043] The nanoposts NP provided in the first and fourth regions 131 and 134 corresponding to the green pixel G may have different distribution patterns in the first direction (X direction) and the second direction (Y direction). For example, the nanoposts NP arranged in the first and fourth regions 131 and 134 may have different size arrangements in the first direction (X direction) and the second direction (Y direction). As shown in FIG. 5C , the cross-sectional area of ​​nanopost p5 located at the boundary between the first region 131 and the adjacent second region 132 in the first direction (X direction) is different from the cross-sectional area of ​​nanopost p6 located at the boundary between the first region 131 and the adjacent third region 133 in the second direction (Y direction). Similarly, the cross-sectional area of ​​nanopost p7 located at the boundary between the fourth region 134 and the adjacent third region 133 in the first direction (X direction) is different from the cross-sectional area of ​​nanopost p8 located at the boundary between the fourth region 134 and the adjacent second region 132 in the second direction (Y direction).

[0044] Meanwhile, the nanoposts NP arranged in the second region 132 corresponding to the blue pixel B and the third region 133 corresponding to the red pixel R may have a symmetrical distribution pattern along the first direction (X direction) and the second direction (Y direction). As shown in Fig. 5C, among the nanoposts NP, nanopost p5 placed on the boundary between pixels adjacent to the second region 132 in the first direction (X direction) and nanopost p8 placed on the boundary between pixels adjacent to the second region 132 in the second direction (Y direction) have the same cross-sectional area. Similarly, in the third region 133, nanopost p7 placed on the boundary between pixels adjacent to the first direction (X direction) and nanopost p6 placed on the boundary between pixels adjacent to the second direction (Y direction) have the same cross-sectional area.

[0045] On the other hand, the nanoposts p9 arranged at the four corners of each of the first to fourth regions 131, 132, 133, and 134, that is, at the positions where the four regions intersect, have the same cross-sectional area.

[0046] This distribution is due to the pixel arrangement of the Bayer pattern. The blue pixel B and the red pixel R are identical in that their adjacent pixels in the first direction (X direction) and the second direction (Y direction) are green pixels G, whereas the green pixel G corresponding to the first region 131 is different in that its adjacent pixel in the first direction (X direction) is a blue pixel B and its adjacent pixel in the second direction (Y direction), and the green pixel G corresponding to the fourth region 134 is different in that its adjacent pixel in the first direction (X direction) is a red pixel R and its adjacent pixel in the second direction (Y direction). The green pixels G corresponding to the first region 131 and the fourth region 134 have four diagonally adjacent green pixels G, which are identical to each other. The blue pixels B corresponding to the second region 132 have four diagonally adjacent red pixels R, which are identical to each other. The red pixels R corresponding to the third region 133 have four diagonally adjacent blue pixels B, which are identical to each other. Therefore, the nanoposts NPs may be arranged in a four-fold symmetry pattern in the second and third regions 132 and 133 corresponding to the blue and red pixels B and R, respectively, and the nanoposts NPs may be arranged in a two-fold symmetry pattern in the first and fourth regions 131 and 134 corresponding to the green pixels G. In particular, the first and fourth regions 131 and 134 are rotated 90° relative to each other.

[0047] 5B and 5C are illustrated as having a symmetrical circular cross-sectional shape, some nanoposts may have an asymmetrical cross-sectional shape. For example, the first and fourth regions 131 and 134 corresponding to the green pixel G may employ nanoposts having an asymmetrical cross-sectional shape with different widths in the first direction (X direction) and the second direction (Y direction), while the second and third regions 132 and 133 corresponding to the blue pixel B and the red pixel R may employ nanoposts having a symmetrical cross-sectional shape with the same widths in the first direction (X direction) and the second direction (Y direction).

[0048] The illustrated arrangement pattern of the color separation lens array 130 is merely an example for realizing a phase distribution in which light of a first wavelength is split and focused at the first photosensitive cell 111 and the fourth photosensitive cell 114, light of a second wavelength is split and focused at the second photosensitive cell 112, and light of a third wavelength is split and focused at the third photosensitive cell 113, and is not limited to the illustrated pattern.

[0049] Figure 6A shows the phase distribution of first and second wavelength light passing through color separation lens array 130 along line I-I' in Figure 5B, Figure 6B shows the phase of first wavelength light passing through color separation lens array 130 at the centers of first to fourth regions 131, 132, 133, and 134, and Figure 6C shows the phase of second wavelength light passing through color separation lens array 130 at the centers of first to fourth regions 131, 132, 133, and 134. The phase distribution of first and second wavelength light shown in Figure 6A is the same as the phase distribution of first and second wavelength light exemplarily described in Figure 3B.

[0050] 6A and 6B, the first wavelength light passing through the color separation lens array 130 may have a phase distribution in which the phase is greatest at the center of the first region 131 and decreases in a direction away from the center of the first region 131. Specifically, the phase of the first wavelength light is greatest at the center of the first region 131 immediately after passing through the color separation lens array 130, i.e., on the lower surface of the color separation lens array 130 or the upper surface of the spacer layer 120, and gradually decreases concentrically with increasing distance from the center of the first region 131. The phase is minimum at the centers of the second and third regions 132 and 133 in the X and Y directions, and is minimum at the junction of the first region 131 and the fourth region 134 in the diagonal direction. If the phase of the first wavelength light emitted from the center of the first region 131 is determined to be 2π as a reference, light with a phase of 0.9π to 1.1π can be emitted from the centers of the second and third regions 132 and 133, a phase of 2π can be emitted from the center of the fourth region 134, and a phase of 1.1π to 1.5π can be emitted from the junction of the first region 131 and the fourth region 134. However, the first phase distribution PP1 does not mean that the phase delay of light passing through the center of the first region 131 is the largest. When the phase of light passing through the first region 131 is determined to be 2π, the phase value of light passing through other positions (when the phase delay is even larger, greater than 2π) is the value remaining after removing about 2nπ, i.e., a wrapped phase distribution. For example, if the phase of light passing through the first region 131 is 2π, and the phase of light passing through the center of the second region 132 is 3π, then the phase in the second region 132 is also the π remaining after removing 2π (when n=1) from 3π.

[0051] 6A and 6C, the second-wavelength light passing through the color separation lens array 130 may have a phase distribution in which the phase is greatest at the center of the second region 132 and decreases in a direction away from the center of the second region 132. Specifically, immediately after passing through the color separation lens array 130, the phase of the second-wavelength light is greatest at the center of the second region 132 and gradually decreases concentrically with increasing distance from the center of the second region 132, reaching minimums at the centers of the first and fourth regions 131 and 134 in the X and Y directions and minimums at the center of the third region 133 in the diagonal direction. If the phase of the second-wavelength light at the center of the second region 132 is 2π, the phase of the second-wavelength light is 0.9π to 1.1π at the centers of the first and fourth regions 131 and 134 and is a value smaller than π, for example, 0.2π to 0.9π, at the center of the third region 133.

[0052] FIG. 6D exemplarily illustrates the traveling direction of the first-wavelength light that has entered the first region 131 of the color separation lens array 130 corresponding to the first photosensitive cell 111 and its periphery, and FIG. 6E exemplarily illustrates a microlens array that acts equivalently to the color separation lens array 130 on the first-wavelength light.

[0053] The first-wavelength light incident on the periphery of the first region 131 is condensed onto the first photosensitive cell 111 by the color separation lens array 130 as shown in Fig. 6D, and the first-wavelength light from the first to third regions 131, 132, and 133 is incident on the first photosensitive cell 111. The phase distribution of the first-wavelength light described with reference to Figs. 6A and 6B is similar to the phase distribution of light that has passed through a virtual first microlens ML1 formed by connecting the centers of two second regions 132 and two third regions 133 that are adjacent to the first region 131 and have one side abutted against the first region 131. Therefore, as shown in Fig. 6E, the color separation lens array 130 can function equivalently to an array of a plurality of first microlenses ML1 arranged around the first region 131 with respect to the first-wavelength light incident on the periphery of the first region 131. Each of the equivalent first microlenses ML1 has an area larger than that of the corresponding first photosensitive cell 111, so that not only the first-wavelength light incident on the first region 131 but also the first-wavelength light incident on the second and third regions 132 and 133 can be focused onto the first photosensitive cell 111. The area of ​​each first microlens ML1 is 1.2 to 2 times larger than that of the corresponding first photosensitive cell 111.

[0054] FIG. 6F exemplarily illustrates the traveling direction of the second-wavelength light that has entered the second region 132 of the color separation lens array 130 corresponding to the second photosensitive cell 112 and its periphery, and FIG. 6G exemplarily illustrates a microlens array that acts equivalently to the color separation lens array 130 on the second-wavelength light.

[0055] The second wavelength light is focused onto the second photosensitive cell 112 by the color separation lens array 130 as shown in Fig. 6F, and the second wavelength light from the first to fourth regions 131, 132, 133, and 134 is incident on the second photosensitive cell 112. The phase distribution of the second wavelength light described with reference to Figs. 6A and 6C is similar to the phase distribution of light that has passed through a virtual second microlens ML2 formed by connecting the centers of four third regions 133 that are adjacent to the second region 132 and have their vertices butted against each other. Therefore, as shown in Fig. 6G, the color separation lens array 130 can function equivalently to an array of a plurality of second microlenses ML2 arranged around the second region 132 with respect to the second wavelength light. Since each second microlens ML2 is larger than the corresponding second photosensitive cell 112, it can focus not only the second-wavelength light incident in the direction of the second photosensitive cell 112 but also the second-wavelength light incident in the directions of the first, third, and fourth photosensitive cells 111, 113, and 114 onto the second photosensitive cell 112. The area of ​​each second microlens ML2 is 1.5 to 4 times larger than the area of ​​the corresponding second photosensitive cell 112.

[0056] Figure 7A shows the phase distribution of the first and third wavelength light that has passed through the color separation lens array 130 along line II-II' in Figure 5B, Figure 7B shows the phase of the third wavelength light that has passed through the color separation lens array 130 at the centers of the first to fourth regions 131, 132, 133, and 134, and Figure 7C shows the phase of the first wavelength light that has passed through the color separation lens array 130 at the centers of the first to fourth regions 131, 132, 133, and 134.

[0057] 7A and 7B, the third wavelength light passing through the color separation lens array 130 has a third phase distribution PP3 similar to that of the second wavelength light described above, centered on the second region 132, and may have a phase distribution that is greatest at the center of the third region 133 and decreases in a direction away from the center of the third region 133. Specifically, the third wavelength light is greatest at the center of the third region 133 immediately after passing through the color separation lens array 130, and gradually decreases concentrically as it moves away from the center of the third region 133, reaching its minimum at the centers of the first and fourth regions 131 and 134 in the X and Y directions, and its minimum at the center of the second region 132 in the diagonal direction. If the phase of the third wavelength light at the center of the third region 133 is 2π, the phase of the third wavelength light at the centers of the first and fourth regions 131, 134 is 0.9π to 1.1π, and at the center of the second region 132 is a value smaller than π, approximately 0.2π to 0.9π.

[0058] FIG. 7D exemplarily illustrates the traveling direction of the third-wavelength light that has entered the third region 133 of the color separation lens array 130 corresponding to the third photosensitive cell 113 and its periphery, and FIG. 7E exemplarily illustrates a microlens array that acts equivalently to the color separation lens array 130 on the third-wavelength light.

[0059] 7D, the third wavelength light is focused onto the third photosensitive cell 113 by the color separation lens array 130, and the third wavelength light from the first to fourth regions 131, 132, 133, and 134 is incident on the third photosensitive cell 113. The phase distribution of the third wavelength light described with reference to FIGS. 7A and 7B is similar to the phase distribution of light that has passed through a virtual third microlens ML3 formed by connecting the centers of four second regions 132 that are adjacent to the third region 133 and whose vertices are butted against each other. Therefore, as shown in FIG. 7E, the color separation lens array 130 can function equivalently to an array of a plurality of third microlenses ML3 arranged around the third photosensitive cell 113 with respect to the third wavelength light. The area of ​​each third microlens ML3 is larger than that of the corresponding third photosensitive cell 113, so that not only the third-wavelength light incident in the direction of the third photosensitive cell 113 but also the third-wavelength light incident in the directions of the first, second, and fourth photosensitive cells 111, 112, and 114 can be focused onto the third photosensitive cell 113. The area of ​​each third microlens ML3 is 1.5 to 4 times larger than that of the corresponding third photosensitive cell 113.

[0060] 7A and 7C, the first-wavelength light incident on the periphery of the fourth region 134 has a fourth phase distribution PP4 centered on the first region 131, similar to the first-wavelength light described above, and may have a phase distribution that is greatest at the center of the fourth region 134 and decreases in a direction away from the center of the fourth region 134. The phase of the first-wavelength light centered on the fourth region 134 is greatest at the center of the fourth region 134 immediately after passing through the color separation lens array 130, and gradually decreases concentrically with increasing distance from the center of the fourth region 134, reaching minimums at the centers of the second and third regions 132 and 133 in the X and Y directions, and at the junction of the first region 131 and the fourth region 134 in the diagonal direction. If the phase of the first wavelength light is 2π at the center of the fourth region 134, it is 0.9π to 1.1π at the centers of the second and third regions 132 and 133, 2π at the center of the first region 131, and 1.1π to 1.5π at the junction between the first region 131 and the fourth region 134.

[0061] 7F exemplarily illustrates the traveling direction of the first-wavelength light that has entered the fourth region and its periphery, and Fig. 7G exemplarily illustrates a microlens array that acts equivalently to a color separation lens array with respect to the first-wavelength light. The first-wavelength light is condensed by the two photosensitive cells 111 and 114, and the phase distribution and traveling direction of the first-wavelength light that enters the fourth region are similar to the phase distribution and traveling direction of the first-wavelength light that has entered the first region 131, so a redundant description will be omitted.

[0062] 7F, the first-wavelength light incident on the periphery of the fourth region 134 is condensed onto the fourth photosensitive cell 114 by the color separation lens array 130, and the first-wavelength light from the second to fourth regions 132, 133, and 134 is incident on the fourth photosensitive cell 114. As shown in FIG. 7G, the color separation lens array 130 can function equivalently to the array of fourth microlenses ML4 arranged around the fourth photosensitive cell 114 for the first-wavelength light incident on the periphery of the fourth region 134.

[0063] FIG. 8 is a diagram showing the spectrum of light incident directly onto the sensor substrate through the color separation lens array 130 in the pixel array of FIGS. 4A and 4B without the spectral correction layer.

[0064] 8, the vertical axis represents QE (Quantum Efficiency), and the horizontal axis represents the wavelength of light. QE (Quantum Efficiency) indicates the degree to which photons incident on the pixel array 1100 are converted into electrons by a photoelectric conversion element. For example, when incident photons are converted into electrons with 80% efficiency, the QE is 0.8, and when incident photons are converted into electrons with 100% efficiency, the QE is 1.0. In a typical pixel array, the QE does not exceed 1.0, but the pixel arrays of FIGS. 4A and 4B include the color separation lens array 130, and therefore the QE is 1.0 or higher. For example, when the QE of the second photosensitive cell 112 is 2.0 for a wavelength of 475 nm, this means that when 100 photons of 475 nm light travel toward the second photosensitive cell 112, the second photosensitive cell 112 generates electrons corresponding to 200 photons. 4A and 4B, not only photons of 475 nm wavelength light traveling toward the second photosensitive cell 112 but also photons of 475 nm wavelength light traveling toward the first and third photosensitive cells 111 and 113 are incident on the second photosensitive cell 112, so that the QE is 1.0 or more. That is, the amount of photons of 475 nm wavelength light that are incident on the second photosensitive cell 112 after passing through the color separation lens array 130 is greater than the amount of photons of 475 nm wavelength light traveling toward the second photosensitive cell 112 before passing through the color separation lens array 130, so that the QE of the second photosensitive cell 112 for 475 nm wavelength light is greater than 1.0.

[0065] 8, the first spectrum S1 represents the spectrum of light that is incident on the pixel array 1100 and split by the color separation lens array 130 and then sensed by the first and fourth photosensitive cells 111 and 114, which are green pixels G. The first spectrum S1 has the highest QE in the 490-580 nm wavelength band corresponding to green light. The second spectrum S2 represents the spectrum of light sensed by the second photosensitive cell 112, which is a blue pixel B. The second spectrum S2 has the highest QE in the 420-475 nm wavelength band corresponding to blue light. The third spectrum S3 represents the spectrum of light sensed by the third photosensitive cell 113, which is a red pixel R. The third spectrum S3 has the highest QE in the 590-680 nm wavelength band corresponding to red light.

[0066] The color separation lens array 130 shown in Figure 5B is just one example, and various types of color separation lens arrays 130 can be designed depending on the color characteristics of the image sensor, the pixel pitch, the angle of incidence of incident light, etc. Also, although the color separation lens array 130 has been described as including a plurality of cylindrical nanoposts NP spaced apart from one another, this is not necessarily limited to this. For example, Figure 9A is a plan view showing the unit pattern shape of another color separation lens array that can be applied to a Bayer pattern type image sensor, and Figure 9B is a plan view showing the unit pattern shape of yet another color separation lens array.

[0067] The first through fourth regions 131', 132', 133', and 134' of the color separation lens array 130' shown in FIG. 9A are binary digitized into 16x16 rectangles, and the unit patterns have a 32x32 rectangular shape. In contrast, the first through fourth regions 131', 132', 133', and 134' of the color separation lens array 130'' shown in FIG. 9B have continuous curved shapes that are not digitized. The rules applied to the first through fourth regions 131', 132', 133', and 134', 131', 132', 133', and 134' of the color separation lens arrays 130' and 130'' shown in FIGS. 9A and 9B are the same as the rules applied to the first through fourth regions 131, 132, 133, and 134 of the color separation lens array 130.

[0068] The color separation lens arrays 130' and 130" that satisfy the phase distribution and performance of the color separation lens array 130 described above can be designed automatically through various computer simulations. For example, the structures of the first to fourth regions 131', 132', 133', 134', 131", 132", 133", and 134" can be optimized using a nature-inspired algorithm such as a genetic algorithm, a particle swarm optimization algorithm, or an ant colony optimization algorithm, or through an inverse design method based on an adjoint optimization algorithm.

[0069] The design of the color separation lens arrays 130', 130" may be performed by evaluating the performance of candidate color separation lens arrays using evaluation factors such as color separation spectrum, optical efficiency, and signal-to-noise ratio, and by optimizing the first through fourth patterns of the first through fourth regions 131', 132', 133', 134', 131", 132", 133", and 134". For example, if target values ​​for each evaluation factor are predetermined, the patterns of the first through fourth regions 131', 132', 133', 134', 131", 132", 133", and 134" may be optimized by minimizing the sum of the differences between the target values ​​for the evaluation factors and the design values. Alternatively, if performance is indexed for each evaluation factor, the patterns of the first to fourth regions 131', 132', 133', 134', 131'', 132'', 133'', and 134'' can be optimized to maximize the value indicating the performance.

[0070] 10A is a perspective view of the first correction unit of FIG. 4A and FIG. 4B, FIG. 10B is a cross-sectional view taken along line III-III' of FIG. 10A, FIG. 10C is a graph showing the transmittance of the first correction unit of FIG. 10A, FIG. 10D is a graph showing the transmittance of an organic color filter that can be applied to a green pixel, and FIG. 10E shows a first spectrum corrected by the first correction unit of FIG. 10A.

[0071] 10A and 10B, the first compensation part 151 includes first nanostructures 151a arranged in an array and first dielectrics 151b disposed between the first nanostructures 151a.

[0072] The first nanostructures 151a may be cylindrical with a circular cross section and may be made of p-Si, a-Si, or Si. The shape, height, and pitch of the first nanostructures 151a may be designed differently depending on the spectrum to be produced as the first corrector 151. For example, the cross-sectional diameter 151w may be 80 nm, the height 151h may be 90 nm, and the pitch 151p may be 100 nm.

[0073] The first dielectric 151b is a dielectric material having a refractive index different from that of the first nanostructure 151a, such as SiO2 or air.

[0074] The first compensator 151 may compensate for the spectrum of light incident on the first and fourth photosensitive cells 111 and 114 and adjust the amount of light transmitted through the first compensator 151 according to wavelength in order to improve the color purity and color reproducibility of the image sensor 1000. For example, if the first compensator 151 is disposed above the first and fourth photosensitive cells 111 and 114, which are green pixels G, to reduce the proportion of blue light incident on the first and fourth photosensitive cells 111 and 114, the transmittance of blue light among the light passing through the first compensator 151 may be designed to be lower than that of green and red light.

[0075] 10C shows a transmittance graph of first corrector 151, which is designed to have a higher transmittance for green light than for blue light. Specifically, first corrector 151 may have a transmittance of 0.8 or more in the 475 nm to 660 nm wavelength band and a transmittance of 0.8 or less in other wavelength bands. In particular, first corrector 151 may exhibit a transmittance of less than 0.5 for light with a wavelength of 450 nm or less and a transmittance of 0.5 or more for light with a wavelength of 500 nm or more. For example, first corrector 151 may exhibit a transmittance of 0.9 for light with a wavelength of 540 nm and a transmittance of 0.9 for light with a wavelength of 640 nm.

[0076] Meanwhile, the shaded area of ​​the transmittance graph in FIG. 10C accounts for 72.6%, which is greater than 50%. The lower area of ​​the transmittance graph of the first compensation unit 151 for the 400-700 nm wavelength band, for example, the area of ​​the shaded area in FIG. 10C, may be 40-90%, 50-80%, or 55-75% of the entire area. This area ratio may be defined as the transmission area ratio. Considering that the transmission area ratio of a green organic color filter disposed above a green pixel of an image sensor is typically 25-40%, as illustrated in FIG. 10D, the transmission area ratio of the first compensation unit 151 is greater than that of a typical green organic color filter.

[0077] 10E, comparing the first spectrum (S1, see FIG. 8) sensed by the first and fourth photosensitive cells 111 and 114 without the first compensator 151 with the corrected first spectrum S1' sensed by the first and fourth photosensitive cells 111 and 114 with the first compensator 151, the amount of light sensed by the corrected first spectrum S1' with a wavelength of 450 nm or less may be reduced to 50% or less compared to the uncorrected first spectrum S1. For example, the QE of 450 nm light decreases from 0.4 in the uncorrected first spectrum S1 to 0.2 in the corrected first spectrum S1'.

[0078] 11A is a perspective view of the second correction unit of FIG. 4A and FIG. 4B, FIG. 11B is a cross-sectional view taken along line IV-IV' of FIG. 11A, FIG. 11C is a graph showing the transmittance of the second correction unit of FIG. 11A, FIG. 11D is a graph showing the transmittance of an organic color filter that can be applied to a blue pixel, and FIG. 11E shows a second spectrum corrected by the second correction unit of FIG. 11A.

[0079] 11A and 11B, the second compensation part 152 includes second nanostructures 152a arranged in an array and second dielectrics 152b disposed between the second nanostructures 152a.

[0080] The second nanostructures 152a may be cylindrical with a circular cross section and may be made of p-Si, a-Si, or Si. The shape, height, and pitch of the second nanostructures 152a may be designed differently depending on the spectrum to be corrected by the second corrector 152. For example, the cross-sectional width 152w may be 200 nm, the height 152h may be 90 nm, and the pitch 152p may be 420 nm.

[0081] Comparing the structures of the first and second correcting portions 151 and 152, the pitch (152p, 420 nm) of the second nanostructures 152a is 2 to 6 times larger than the pitch (151p, 100 nm) of the first nanostructures 151a, and the cross-sectional area (10.0*10^ 3 π nm^ 2 ) is the cross-sectional area (1.6*10^ 3 π nm^ 2 ) is 4 to 10 times larger.

[0082] The second dielectric 152b may be a dielectric material having a refractive index different from that of the second nanostructure 152a, such as SiO2 or air.

[0083] The second corrector 152 may adjust the amount of light transmitted through the second corrector 152 differently for each wavelength. For example, if the second corrector 152 is disposed above the second photosensitive cell 112, which is a blue pixel B, to reduce the proportion of red light incident on the second photosensitive cell 112, the second nanostructure 152a may be designed so that the transmittance of red light among the incident light is lower than that of green and blue light.

[0084] 11C shows a transmittance graph of second corrector 152, which is designed to have a lower transmittance for red light than for green and blue light. Specifically, second corrector 152 exhibits a transmittance of 0.5 or more or 0.6 or more for wavelengths of 610 nm or less, and a transmittance of less than 0.5 for wavelengths of 615 nm to 675 nm, for example, a 650 nm wavelength. In particular, second corrector 152 exhibits a transmittance of greater than 0.6 for wavelengths of 450 nm and 540 nm, and a transmittance of less than 0.4 for a 640 nm wavelength.

[0085] 11C, the shaded area occupies 70.0%, which is greater than 50%. Thus, the transmission area ratio of the second corrector 152 for the 400-700 nm wavelength band is 40%-90%, 50%-80%, or 55%-75%. Considering that the transmission area ratio of a blue organic color filter disposed above a blue pixel of an image sensor is generally 25%-40%, as illustrated in FIG. 11D, the transmission area ratio of the second corrector 152 is greater than that of a typical blue organic color filter.

[0086] 11E, comparing the second spectrum (S2, see FIG. 8) sensed by the second photosensitive cell 112 without the second corrector 152 with the corrected second spectrum S2' sensed by the second photosensitive cell 112 with the second corrector 152, we see that the sensed amount of light with wavelengths of 640 to 650 nm in the corrected second spectrum S2' is reduced to 50% or less compared to the second spectrum S2. For example, the QE at a wavelength of 650 nm decreases from 0.8 before correction to 0.4 after correction.

[0087] 12A is a perspective view of the third correction unit of FIGS. 4A and 4B, FIG. 12B is a cross-sectional view taken along line V-V' of FIG. 12A, FIG. 12C is a graph showing the transmittance of the third correction unit of FIG. 12A, FIG. 12D is a graph showing the transmittance of an organic color filter that can be applied to a red pixel, and FIG. 12E shows a third spectrum corrected by the third correction unit.

[0088] 12A and 12B, the third compensation part 153 includes third nanostructures 153a arranged in an array and third dielectrics 153b disposed between the third nanostructures 153a.

[0089] The third nanostructures 153a may be cylindrical with a circular cross section and may be made of p-Si, a-Si, or Si. The shape, height, and pitch of the third nanostructures 153a are designed differently depending on the spectrum to be corrected by the third corrector 153. For example, the cross-sectional width 153w may be 140 nm, the height 153h may be 90 nm, and the pitch 153p may be 180 nm. In the examples of FIGS. 10A, 11A, and 12A, the first through third nanostructures 151a, 152a, and 153a are described as having a height of 90 nm, but the height of the nanostructures may range from 30 nm to 160 nm.

[0090] Comparing the structures of the first to third correction portions 151, 152, and 153, the pitch of the third nanostructure 153a (153p, 180 nm) is larger than the pitch of the first nanostructure 151a (151p, 100 nm) and smaller than the pitch of the second nanostructure 152a (151p, 420 nm). 3 π nm^ 2 ) is the cross-sectional area (1.6*10^ 3 π nm^ 2 ) and the cross-sectional area of ​​the second nanostructure 152a (10.0*10^ 3 π nm^ 2 ) is smaller than

[0091] The third dielectric 153b may be a dielectric material having a refractive index different from that of the third nanostructure 153a, such as SiO2 or air.

[0092] The third compensator 153 adjusts the amount of light passing through the third compensator 153 differently for each wavelength. For example, if the third compensator 153 is disposed above the third photosensitive cell 112, which is a red pixel R, to reduce the proportion of blue light incident on the third photosensitive cell 112, the third nanostructure 153 may be designed so that the transmittance of blue light is lower than that of green and red light.

[0093] 12C shows a transmittance graph of the third corrector 153, which is designed to have a lower transmittance for blue light than for green and red light. The third corrector 153 exhibits a transmittance of less than 0.5 for wavelengths of 500 nm or less and a transmittance of 0.5 or more for wavelengths of 600 nm or more. Specifically, the third corrector 153 exhibits a transmittance of 0.7 or more for wavelengths of 550 nm or more, a transmittance of 0.7 or less for wavelengths of 540 nm or less, and a transmittance of less than 0.5 for wavelengths of 530 nm or less. In particular, the third corrector 153 exhibits a transmittance of 0.2 for a wavelength of 450 nm, 0.63 for a wavelength of 540 nm, and 0.92 for a wavelength of 640 nm.

[0094] 12C, the shaded area occupies 55.0%, which is larger than 50%. Like the first and second correctors 151 and 152, the third corrector 153 also has a transmission area ratio for the 400-700 nm wavelength band of 40%-90%, 50%-80%, or 55%-75%. Considering that the transmission area ratio of a red organic color filter disposed above a red pixel is generally 25%-40%, as illustrated in FIG. 12D, the transmission area ratio of the third corrector 153 is larger than that of a typical red organic color filter.

[0095] As described for the first to third correcting portions 151, 152, and 153, the transmission area ratio of the spectral correcting layer 150 for wavelengths of 400 nm to 700 nm is 40% to 90%, 50% to 80%, or 55% to 75%.

[0096] 12E, comparing the third spectrum (S3, see FIG. 8) sensed by the third photosensitive cell 112 without the third compensator 153 with the corrected third spectrum S3' sensed by the third photosensitive cell 112 with the third compensator 153, we see that the sensed amount of light with a wavelength of 530 nm or less in the corrected third spectrum S3' is reduced to 50% or less compared to the third spectrum S3. For example, the QE of light with a wavelength of 530 nm is reduced from 0.8 before the correction to 0.4 after the correction.

[0097] FIG. 13 is a diagram showing the spectrum of light incident on the sensor substrate through the color separation lens array and the spectral correction layer when the pixel array of FIGS. 4A and 4B has a spectral correction layer.

[0098] The spectrum of Fig. 13 differs from the spectrum of Fig. 8 in that it has been corrected by the spectral correcting layer 150 described with reference to Figs. 10 to 12. Compared to the spectrum of Fig. 8, the spectrum of Fig. 13 may have an improved pixel concentration for each color. For green light, the QE of the first and fourth photosensitive cells 111 and 114 corresponding to the green pixel G accounts for a larger proportion of the QE for green light across the entire sensor substrate 110. For blue light, the QE of the second photosensitive cell 112 corresponding to the blue pixel B accounts for a larger proportion. For red light, the QE of the third photosensitive cell 113 corresponding to the red pixel B accounts for a larger proportion. This means that the pixel concentration for each color is improved.

[0099] 8, the QE of the second photosensitive cell 112 corresponding to the blue pixel B for light in the 450 nm wavelength band, which is blue light, is 2.75, and the overall QE, i.e., the QE of the first to fourth photosensitive cells 111, 112, 113, and 114, is 3.4 (2.75 + 0.4 + 0.25), with the QE of the second photosensitive cell 112 accounting for 80.9%. In the spectrum of Fig. 13, the QE of the second photosensitive cell 112 corresponding to the blue pixel B for light in the 450 nm wavelength band, which is blue light, is 1.97, with the QE accounting for as high as 89.4% of the overall QE of 2.20 (1.97 + 0.17 + 0.06). This means that the proportion of light sensed by the second photosensitive cells in the 450 nm wavelength band sensed by the sensor substrate 110 is 89.4%. Of the 450 nm wavelength light sensed by the sensor substrate 110 equipped with the spectral correction layer 150, the proportion of the light sensed by the second photosensitive cells is as high as 83% to 95%.

[0100] As another example, in the spectrum of FIG. 8, for light in the 540 nm wavelength band, which is green light, the QE of the first and fourth photosensitive cells 111 and 114 corresponding to the green pixel G is 1.10, which accounts for 38.70% of the overall QE of 2.85 (1.10 + 0.47 + 1.28). In the spectrum of FIG. 13, for light in the 540 nm wavelength band, which is green light, the QE of the first and fourth photosensitive cells 111 and 114 corresponding to the green pixel G is 0.93, which accounts for a large 44.30% of the overall QE of 2.10 (0.93 + 0.42 + 0.75). 8, the QE of the third photosensitive cell 113 corresponding to the red pixel R for light in the 640 nm wavelength band, which is red light, is 1.89, which accounts for 59.20% of the overall QE of 3.20 (0.62 + 0.69 + 1.89). Meanwhile, the QE of the third photosensitive cell 113 corresponding to the red pixel R for light in the 640 nm wavelength band, which is red light, is 1.84, which accounts for a large QE of 66.90% of the overall QE of 2.75 (0.60 + 0.31 + 1.84). This means that the proportion of the 640 nm wavelength light sensed by the sensor substrate 110 that is sensed by the third photosensitive cell is 66.9%. Of the 640 nm wavelength light sensed by the sensor substrate 110 that is provided with the spectral correcting layer 150, the proportion of the light sensed by the third photosensitive cell is 60% to 75%.

[0101] The pixel concentration by color for 450nm, 540nm, and 640nm wavelength lights is summarized in Tables 1 and 2 below.

[0102] [Table 1]

[0103] [Table 2]

[0104] As shown in Table 2, the proportion of the light with a wavelength of 450 nm sensed by the sensor substrate 110 that is sensed by the second photosensitive cells 112 is 85% or more. Also, the proportion of the light with a wavelength of 640 nm sensed by the sensor substrate 110 that is sensed by the third photosensitive cells 113 is 60% or more.

[0105] Generally, improving pixel concentration for each color often improves the color purity and color reproducibility of the image sensor 100, so if the color separation lens array 130 and the spectral correction layer 150 are properly combined, the performance of the image sensor 100 can be improved.

[0106] Comparing the structures of the color separation lens array 130 and the spectral correction layer 150, the height of the nanopost NPs contained in the color separation lens array 130 is 3 to 50 times greater than that of the nanostructures 151a, 152a, and 153a, and the thickness of the color separation lens array 130 is also 3 to 50 times greater than that of the spectral correction layer 150.

[0107] 14A to 14C are diagrams illustrating other embodiments of the spectral correction layer.

[0108] In the above-mentioned embodiments of Figures 10A, 11A and 12A, examples have been described in which the first to third correction units 151, 152 and 153 include cylindrical nanostructures, but each correction unit may also include a rectangular pillar-shaped nanostructure as shown in Figure 14A.

[0109] 10A, 11A, and 12A, examples have been described in which the nanostructure has a higher refractive index than the dielectric, but a structure in which the nanostructure 151a'' has a lower refractive index than the dielectric 151b'' as shown in FIG. 14B is also possible. For example, the nanostructure 151a'' in FIG. 14B may be SiO2, and the dielectric 151b'' may be p-Si, a-Si, Si, or Al-plasmonic.

[0110] In addition, in the examples of Figures 10A, 11A, and 12A, a structure in which the dielectric is a single layer is described as an example, but as shown in Figure 14C, the dielectric 151b''' may also have a structure in which materials with different refractive indices are repeatedly stacked.

[0111] 10A, 11A, and 12A, the nanostructures included in the first to third correcting units 151, 152, and 153 have the same diameter, but nanostructures of different shapes may be included to form a desired spectrum. For example, the first correcting unit 151 may include two types of cylinders with different diameters, or may further include a rectangular cylinder in addition to the cylinders.

[0112] 15A and 15B are schematic diagrams showing different cross sections of a pixel array according to another embodiment.

[0113] 15A and 15B differ from the embodiment of FIGS. 4A and 4B in that an optical filter layer 170 disposed on top of the color separation lens array 130 is further included. The optical filter layer 170 may absorb and / or reflect a specific wavelength band and selectively transmit only a portion of the light before it enters the color separation lens array 130. For example, the optical filter layer 170 may block ultraviolet and infrared light and transmit only light in the visible light band, thereby contributing to improving the color purity and color reproducibility of the image sensor 1000.

[0114] 15A and 15B, except for the optical filter layer 170, are similar to those in the embodiment of FIGS. 4A and 4B, and therefore will not be described again.

[0115] FIG. 16A is a schematic cross-sectional view of the optical filter layer shown in FIGS. 15A and 15B, and FIG. 16B is a graph showing the transmittance of the optical filter layer according to wavelength.

[0116] 16A, optical filter layer 170 includes first filter layer 171 made of a first material and second filter layer 172 made of a second material having a lower refractive index than the first material. First and second filter layers 171 and 172 are alternately stacked, and the transmission wavelength of optical filter layer 170 can be changed by changing parameters such as the material, thickness, and number of stacking of first and second filter layers 171 and 172. For example, optical filter layer 170 has a structure in which first filter layer 171, 85 nm thick and made of TiO2, and second filter layer 172, 125 nm thick and made of SiO2, are alternately stacked 22 times.

[0117] 16B, optical filter layer 170 blocks light in the ultraviolet and infrared wavelength bands and transmits light in the visible light band. For example, optical filter layer 170 has a transmittance of 0.9 or more for light with wavelengths of 435 nm to 600 nm, and a transmittance of 0.2 or less for light with wavelengths of 420 nm or less or 650 nm or more. In the transmittance spectrum of optical filter layer 170, the increase in transmittance in the 420 nm to 440 nm range is greater than the decrease in transmittance in the 600 nm to 650 nm range. For example, in the 420 nm to 440 nm range, when the wavelength increases by about 20 nm, the transmittance increases by more than 0.75, from 0.20 to 0.95. On the other hand, in the 600 nm to 650 nm range, when the wavelength increases by about 50 nm, the transmittance decreases by about 0.7, from 0.9 to 0.2. The transmittance increases sharply in the 420 nm to 440 nm range, and decreases relatively slowly in the 600 nm to 650 nm range.

[0118] FIG. 17 is a diagram showing the spectrum of light incident on the pixel array of FIGS. 15A and 15B.

[0119] The spectrum of FIG. 17 differs from the spectrum of FIG. 13 in that it is the spectrum of light that has passed through the optical filter layer 170 described with reference to FIGS. 15A and 15B. The spectrum of FIG. 17 has a reduced offset compared to the spectrum of FIG. 13. The reduced offset means that the intervals in which the QEs of the first through third spectra S1'', S2'', and S3'' are all equal to or greater than a certain level are reduced. For example, referring to FIG. 13, the QEs of the first through third spectra S1', S2', and S3' are all equal to or greater than 0.2 in the wavelength intervals of 520 nm to 550 nm and 600 nm or greater. However, referring to FIG. 17, the intervals in which the QEs of the first through third spectra S1'', S2'', and S3'' are all equal to or greater than 0.2 are reduced. The reduced offset can contribute to improved color reproducibility of the image sensor 1000.

[0120] The image sensor 1000 including the pixel array 1100 described above has almost no light loss due to color filters, e.g., organic color filters, and can therefore provide a sufficient amount of light to pixels even when the pixel size is small. Therefore, it is possible to fabricate ultra-high-resolution, micro-high-sensitivity image sensors having hundreds of millions of pixels. Such ultra-high-resolution, micro-high-sensitivity image sensors can be used in a variety of high-performance optical devices or electronic devices. Examples of such electronic devices include, but are not limited to, various portable devices such as smartphones, personal digital assistants (PDAs), laptops, and PCs, home appliances, security cameras, medical cameras, automobiles, Internet of Things (IoT) devices, and other mobile or non-mobile computing devices.

[0121] In addition to the image sensor 1000, the electronic device may further include a processor, for example, an application processor (AP), that controls the image sensor. The processor may run an operating system or application program to control multiple hardware or software components and perform various data processing and calculations. The processor may further include a graphic processing unit (GPU) and / or an image signal processor. If the processor includes an image signal processor, the image (or video) acquired by the image sensor may be stored and / or output using the processor.

[0122] 18 is a block diagram illustrating an example of an electronic device 1801 including an image sensor 1000. Referring to FIG. 18, in a network environment 1800, the electronic device 1801 can communicate with another electronic device 1802 through a first network 1898 (e.g., a short-range wireless communication network) or with yet another electronic device 1804 and / or a server 1808 through a second network 1899 (e.g., a long-range wireless communication network). The electronic device 1801 can communicate with the electronic device 1804 through the server 1808. The electronic device 1801 includes a processor 1820, a memory 1830, an input device 1850, an audio output device 1855, a display device 1860, an audio module 1870, a sensor module 1876, an interface 1877, a haptic module 1879, a camera module 1880, a power management module 1888, a battery 1889, a communication module 1890, a subscriber identity module 1896, and / or an antenna module 1897. The electronic device 1801 may omit some of the components (e.g., the display device 1860) or may include other components. Some of the components may be embodied as a single integrated circuit. For example, the sensor module 1876 (e.g., a fingerprint sensor, an iris sensor, an illuminance sensor, etc.) may be embodied embedded in the display device 1860 (e.g., a display).

[0123] The processor 1820 may execute software (e.g., program 1840) to control one or more different components (e.g., hardware and software components) of the electronic device 1801 coupled to the processor 1820 and perform various data processing or computations. As part of the data processing or computations, the processor 1820 may load instructions and / or data received from other components (e.g., sensor module 1876, communication module 1890) into volatile memory 1832, process the instructions and / or data stored in volatile memory 1832, and store the resulting data in non-volatile memory 1834. The processor 1820 includes a main processor 1821 (e.g., a central processing unit, an application processor, etc.) and an auxiliary processor 1823 (e.g., a graphics processing unit, an image signal processor, a sensor hub processor, a communication processor, etc.) that may operate independently or in conjunction with the main processor 1821. The auxiliary processor 1823 may use less power than the main processor 1821 and may perform specialized functions.

[0124] The auxiliary processor 1823 can control functions and / or states of some components (such as the display device 1860, the sensor module 1876, and the communication module 1890) of the electronic device 1801 in place of the main processor 1821 while the main processor 1821 is in an inactive state (sleep state), or together with the main processor 1821 while the main processor 1821 is in an active state (application execution state). The auxiliary processor 1823 (such as the image signal processor and the communication processor) may also be embodied as part of other functionally related components (such as the camera module 1880 and the communication module 1890).

[0125] The memory 1830 can store various data required by the components of the electronic device 1801 (e.g., the processor 1820, the sensor module 1876, etc.). The data includes, for example, software (e.g., the program 1840) and input and / or output data for instructions associated therewith. The memory 1830 includes a volatile memory 1832 and / or a nonvolatile memory 1834. The nonvolatile memory 1834 includes an internal memory 1836 fixedly mounted within the electronic device 1801 and a removable external memory 1838.

[0126] Programs 1840 are stored as software in memory 1830 and include an operating system 1842 , middleware 1844 and / or applications 1846 .

[0127] The input device(s) 1850 can receive instructions and / or data from outside (e.g., a user) the electronic device 1801 for use by components (e.g., processor 1820) of the electronic device 1801. The input device(s) 1850 include a microphone, a mouse, a keyboard, and / or a digital pen (e.g., a stylus pen).

[0128] The audio output device 1855 can output audio signals to the outside of the electronic device 1801. The audio output device 1855 includes a speaker and / or a receiver. The speaker can be used for general purposes such as multimedia playback or recording and playback, and the receiver can be used to receive incoming calls. The receiver can be integrated into the speaker or implemented as a separate, independent device.

[0129] Display device 1860 can visually provide information external to electronic device 1801. Display device 1860 includes a display, a holographic device, or a projector and control circuitry for controlling the device. Display device 1860 includes touch circuitry configured to sense a touch and / or sensor circuitry (such as a pressure sensor) configured to measure the strength of a force generated by a touch.

[0130] Audio module 1870 may convert sound into an electrical signal or vice versa. Audio module 1870 may acquire sound through input device 1850 or output sound through audio output device 1855 and / or speakers and / or headphones of other electronic devices (e.g., electronic device 1802) directly or wirelessly coupled to electronic device 1801.

[0131] The sensor module 1876 can sense the operating state (e.g., power, temperature) of the electronic device 1801 or the external environmental state (e.g., user state) and generate an electrical signal and / or a data value corresponding to the sensed state. The sensor module 1876 can include a gesture sensor, a gyro sensor, a barometric pressure sensor, a magnetic sensor, an acceleration sensor, a grip sensor, a proximity sensor, a color sensor, an IR (Infrared) sensor, a biometric sensor, a temperature sensor, a humidity sensor, and / or an illuminance sensor.

[0132] Interface 1877 may support one or more specified protocols used for electronic device 1801 to interface directly or wirelessly with other electronic devices (such as electronic device 1802). Interface 1877 may include a High Definition Multimedia Interface (HDMI), a Universal Serial Bus (USB) interface, an SD card interface, and / or an audio interface.

[0133] The connection terminal 1878 includes a connector that allows the electronic device 1801 to be physically connected to another electronic device (such as the electronic device 1802). The connection terminal 1878 includes an HDMI connector, a USB connector, an SD card connector, and / or an audio connector (such as a headphone connector).

[0134] The haptic module 1879 can convert electrical signals into mechanical stimuli (such as vibrations or movements) or electrical stimuli that can be perceived by the user through touch or kinesthetic sensations. The haptic module 1879 can include motors, piezoelectric elements, and / or electrical stimulators.

[0135] The camera module 1880 can capture still and video images. The camera module 1880 includes a lens assembly including one or more lenses, the image sensor 1000 of FIG. 1, an image signal processor, and / or a flash. The lens assembly included in the camera module 1880 can collect light emitted from a subject of interest for image capture.

[0136] The power management module 1888 may manage the power supplied to the electronic device 1801. The power management module 1888 may be embodied as part of a power management integrated circuit (PMIC).

[0137] Battery 1889 can provide power to the components of electronic device 1801. Battery 1889 can include non-rechargeable primary batteries, rechargeable secondary batteries, and / or fuel cells.

[0138] The communication module 1890 can support the establishment of a direct (wired) communication channel and / or a wireless communication channel between the electronic device 1801 and other electronic devices (such as the electronic device 1802, the electronic device 1804, and the server 1808) and the execution of communication via the established communication channel. The communication module 1890 includes one or more communication processors that operate independently of the processor 1820 (such as an application processor) and support the direct communication and / or the wireless communication. The communication module 1890 includes a wireless communication module 1892 (such as a cellular communication module, a short-range wireless communication module, or a GNSS (Global Navigation Satellite System) communication module) and / or a wired communication module 1894 (such as a LAN (Local Area Network) communication module or a power line communication module). Among these communication modules, the communication module can communicate with other electronic devices through a first network 1898 (a short-range communication network such as Bluetooth, WiFi Direct, or IrDA (Infrared Data Association)) or a second network 1899 (a long-range communication network such as a cellular network, the Internet, or a computer network (LAN, WAN, etc.)). These types of communication modules can be integrated into a single component (e.g., a single chip) or embodied as multiple separate components (multiple chips). The wireless communication module 1892 can identify and authenticate the electronic device 1801 in a communication network such as the first network 1898 and / or the second network 1899 using subscriber information (e.g., an International Mobile Subscriber Identity (IMSI)) stored in the subscriber identification module 1896.

[0139] The antenna module 1897 transmits or receives signals and / or power to or from the outside (such as other electronic devices). The antenna includes a radiator made of a conductive pattern formed on a substrate (such as a PCB). The antenna module 1897 includes one or more antennas. When multiple antennas are included, the communication module 1890 can select an antenna from the multiple antennas that is suitable for a communication method used in a communication network such as the first network 1898 and / or the second network 1899. Signals and / or power are transmitted or received between the communication module 1890 and other electronic devices via the selected antenna. In addition to the antenna, other components (such as an RFIC) may be included as part of the antenna module 1897.

[0140] Some of the components are connected to each other through a communication method between peripheral devices (bus, GPIO (General Purpose Input and Output), SPI (Serial Peripheral Interface), MIPI (Mobile Industry Processor Interface), etc.) and can exchange signals (commands, data, etc.).

[0141] Commands or data may be transmitted or received between electronic device 1801 and external electronic device 1804 via server 1808 connected to second network 1899. Other electronic devices 1802 and 1804 may be the same or different types of devices as electronic device 1801. All or part of the operations performed by electronic device 1801 may be performed by one or more of the other electronic devices 1802, 1804, and 1808. For example, when electronic device 1801 needs to perform a certain function or service, instead of performing the function or service itself, it may request one or more other electronic devices to perform the function or service in whole or in part. The one or more other electronic devices that receive the request may perform additional functions or services related to the request and transmit the results of their execution to electronic device 1801. For this purpose, cloud computing, distributed computing, and / or client-server computing technologies may be used.

[0142] FIG. 19 is a block diagram illustrating the camera module 1880 of FIG. 18. Referring to FIG. 19, the camera module 1880 includes a lens assembly 1910, a flash 1920, an image sensor 1000 (see FIG. 1), an image stabilizer 1940, a memory 1950 (e.g., a buffer memory), and / or an image signal processor 1960. The lens assembly 1910 can collect light emitted from a subject to be imaged. The camera module 1880 may include multiple lens assemblies 1910. In such cases, the camera module 1880 may be a dual camera, a 360° camera, or a spherical camera. Some of the multiple lens assemblies 1910 may have the same lens attributes (angle of view, focal length, autofocus, F-number, optical zoom, etc.) or may have different lens attributes. The lens assembly 1910 may include a wide-angle lens or a telephoto lens.

[0143] The flash 1920 can emit light used to enhance light emitted or reflected from an object. The flash 1920 can include one or more light-emitting diodes (e.g., RGB (Red-Green-Blue) LEDs, White LEDs, Infrared LEDs, Ultraviolet LEDs, etc.) and / or Xenon Lamps. The image sensor 1000 can also be the image sensor described in FIG. 1 and can capture an image corresponding to the object by converting light emitted or reflected from the object and transmitted through the lens assembly 1910 into an electrical signal. The image sensor 1000 can include one or more sensors selected from image sensors with different attributes, such as an RGB sensor, a BW (Black and White) sensor, an IR sensor, or a UV sensor. Each sensor included in the image sensor 1000 can be embodied as a CCD (Charged Coupled Device) sensor and / or a CMOS (Complementary Metal Oxide Semiconductor) sensor.

[0144] The image stabilizer 1940 may respond to movement of the camera module 1880 or the electronic device 1901 including the same by moving one or more lenses included in the lens assembly 1910 or the image sensor 1000 in a specific direction or by controlling the operating characteristics of the image sensor 1000 (such as adjusting read-out timing) to compensate for negative effects of the movement. The image stabilizer 1940 may sense movement of the camera module 1880 or the electronic device 1801 using a gyro sensor (not shown) or an acceleration sensor (not shown) disposed inside or outside the camera module 1880. The image stabilizer 1940 may also be embodied optically.

[0145] The memory 1950 can store part or all of the data of an image acquired through the image sensor 1000 for subsequent image processing. For example, when multiple images are acquired at high speed, the acquired original data (Bayer-Patterned data, high-resolution data, etc.) can be stored in the memory 1950, and after displaying only the low-resolution image, the original data of the selected (e.g., user-selected) image can be transmitted to the image signal processor 1960. The memory 1950 can be integrated with the memory 1830 of the electronic device 1801 or configured as a separate memory that operates independently.

[0146] The image signal processor 1960 may perform image processing on images acquired through the image sensor 1000 or image data stored in the memory 1950. Image processing may include depth map generation, 3D modeling, panorama generation, feature point extraction, image synthesis, and / or image compensation (noise reduction, resolution adjustment, brightness adjustment, blurring, sharpening, softening, etc.). The image signal processor 1960 may perform control (exposure time control, readout timing control, etc.) on components included in the camera module 1880 (e.g., the image sensor 1000). Images processed by the image signal processor 1960 may be stored back in the memory 1950 for further processing or provided to external components of the camera module 1880 (e.g., the memory 1830, the display device 1860, the electronic device 1802, the electronic device 1804, the server 1808, etc.). The image signal processor 1960 may be integrated into the processor 1820 or may be configured as a separate processor that operates independently of the processor 1820. When the image signal processor 1960 is configured as a separate processor from the processor 1820, the image processed by the image signal processor 1960 may be displayed on the display device 1860 after undergoing additional image processing by the processor 1820.

[0147] The electronic device 1801 includes multiple camera modules 1880 with different attributes or functions. In such a case, one of the multiple camera modules 1880 may be a wide-angle camera and another may be a telephoto camera. Similarly, one of the multiple camera modules 1880 may be a front-facing camera and another may be a rear-facing camera.

[0148] The image sensor 1000 according to the embodiment may be applied to a mobile phone or smartphone 2000 shown in Fig. 20, a tablet or smart tablet 2100 shown in Fig. 21, a digital camera or camcorder 2200 shown in Fig. 22, a laptop computer 2300 shown in Fig. 23, or a television or smart TV 2400 shown in Fig. 24. For example, the smartphone 2000 or the smart tablet 2100 may include multiple high-resolution cameras, each equipped with a high-resolution image sensor. The high-resolution cameras may be used to extract depth information of an object in an image, adjust out-of-focus of the image, or automatically identify an object in the image.

[0149] The image sensor 1000 may also be applied to the smart refrigerator 2500 shown in FIG. 25, the security camera 2600 shown in FIG. 26, the robot 2700 shown in FIG. 27, and the medical camera 2800 shown in FIG. 28. For example, the smart refrigerator 2500 automatically recognizes food in the refrigerator using an image sensor and notifies the user via a smartphone of the presence or absence of a specific food item, the type of food that has been stored or removed, etc. The security camera 2600 provides ultra-high-resolution images and uses high sensitivity to enable recognition of objects or people in the images even in dark environments. The robot 2700 can be deployed in disaster or industrial sites where direct human access is impossible and provide high-resolution images. The medical camera 2800 provides high-resolution images for diagnosis or surgery and can dynamically adjust the field of view.

[0150] 29, the image sensor 1000 may be applied to a vehicle 2900. The vehicle 2900 includes a plurality of vehicle cameras 2910, 2920, 2930, and 2940 arranged at various positions, and each of the vehicle cameras 2910, 2920, 2930, and 2940 includes an image sensor according to the embodiment. The vehicle 2900 can provide a driver with various information related to the inside or surroundings of the vehicle 2900 using the vehicle cameras 2910, 2920, 2930, and 2940, and can automatically recognize objects or people in the image to provide information necessary for autonomous driving.

[0151] Although the image sensor with the color separation lens array and the electronic device including the same have been described based on the embodiments shown in the drawings, these are merely examples, and a person skilled in the art would understand that various modifications and equivalent embodiments are possible. Therefore, the disclosed embodiments should be considered from an illustrative perspective, not a restrictive perspective. The scope of the claims is set forth in the appended claims, not the foregoing description, and all differences within the scope of the claims should be construed as being within the scope of the claims. [Explanation of symbols]

[0152] 111, 112, 113, 114 Photosensitive cells 130 Color Separation Lens Array 131 First area 132 Second area 133 Third area 134 4th area 150 Spectral Correction Layer 1000 image sensors 1100 pixel array 1010 Timing Controller 1020 Row Decoder 1030 Output circuit

Claims

1. a sensor substrate including first and second photosensitive cells for detecting light; a color separation lens array including a plurality of nanoposts configured to focus light of a first wavelength included in incident light onto the first photosensitive cells and light of a second wavelength included in incident light onto the second photosensitive cells; and a spectral correction layer disposed between the sensor substrate and the color separation lens array, the spectral correction layer including a plurality of nanostructures having a first refractive index and a dielectric material having a second refractive index, the spectral correction layer reflecting and / or absorbing a portion of light that has passed through the color separation lens array to correct the spectral distribution of light that is incident on the sensor substrate; the color separation lens array includes a first region corresponding to the first photosensitive cell and a second region corresponding to the second photosensitive cell, and the first region and the second region each include at least one nanopost.

2. 2. The image sensor of claim 1, wherein the color separation lens array is 3 to 50 times thicker than the spectral correction layer.

3. 2. The image sensor of claim 1, wherein the color separation lens array has a thickness of 500 nm to 1500 nm, and the spectral correction layer has a thickness of 30 nm to 160 nm.

4. the spectral correction layer includes a first corrector formed on the first photosensitive cell, The image sensor of claim 1 , wherein the first corrector has a transmittance of less than 0.5 for light having a wavelength of 450 nm or less and a transmittance of 0.5 or more for light having a wavelength of 500 nm or more.

5. the spectral correction layer includes a second corrector formed on the second photosensitive cell, The image sensor of claim 1 , wherein the second corrector has a transmittance of less than 0.5 for light having a wavelength of 650 nm and a transmittance of 0.5 or more for light having a wavelength of 610 nm or less.

6. the spectral correction layer includes a first corrector formed on the first photosensitive cell and a second corrector formed on the second photosensitive cell, 2. The image sensor of claim 1, wherein the first correction portion includes a plurality of first nanostructures having a first cross-sectional area, and the second correction portion includes a plurality of second nanostructures having a second cross-sectional area larger than the first cross-sectional area.

7. The image sensor of claim 6 , wherein each of the first nanostructures and the second nanostructures has a cylindrical or rectangular prism shape.

8. 7. The image sensor of claim 6, wherein the second cross-sectional area is four to ten times larger than the first cross-sectional area.

9. the spectral correction layer includes a first corrector formed on the first photosensitive cell and a second corrector formed on the second photosensitive cell, 2. The image sensor of claim 1, wherein the first correction portion includes a plurality of first nanostructures arranged at a first pitch, and the second correction portion includes a plurality of second nanostructures arranged at a second pitch.

10. 10. The image sensor of claim 9, wherein the second pitch is two to six times larger than the first pitch.

11. the sensor substrate further includes a third photo-sensitive cell and a fourth photo-sensitive cell that sense light, 2. The image sensor of claim 1, wherein the color separation lens array shifts the phases of the first, second, and third wavelength lights to be different from each other so that the first wavelength light is incident on the first and fourth photosensitive cells and the third wavelength light is incident on the third photosensitive cell.

12. the spectral correction layer includes a third corrector formed on the third photosensitive cell, The image sensor of claim 11 , wherein the third corrector has a transmittance of less than 0.5 for light having a wavelength of 500 nm or less and a transmittance of 0.5 or more for light having a wavelength of 600 nm or more.

13. the spectral correction layer includes a first corrector formed on the first and fourth photosensitive cells, a second corrector formed on the second photosensitive cell, and a third corrector formed on the third photosensitive cell; 12. The image sensor of claim 11, wherein the first correction portion includes a plurality of first nanostructures having a first cross-sectional area, the second correction portion includes a plurality of second nanostructures having a second cross-sectional area larger than the first cross-sectional area, and the third correction portion includes a plurality of third nanostructures having a third cross-sectional area larger than the first cross-sectional area and smaller than the second cross-sectional area.

14. The image sensor of claim 13 , wherein each of the first to third nanostructures has a cylindrical or rectangular prism shape.

15. the spectral correction layer includes a first corrector formed on the first and fourth photosensitive cells, a second corrector formed on the second photosensitive cell, and a third corrector formed on the third photosensitive cell; 12. The image sensor of claim 11, wherein the first correction portion includes a plurality of first nanostructures arranged at a first pitch, the second correction portion includes a plurality of second nanostructures arranged at a second pitch larger than the first pitch, and the third correction portion includes a plurality of third nanostructures having a third pitch larger than the first pitch and smaller than the second pitch.

16. 12. The image sensor of claim 11, wherein the proportion of light sensed by the second photosensitive cells to light having a wavelength of 450 nm sensed by the sensor substrate is 85% or more.

17. 12. The image sensor of claim 11, wherein a proportion of light sensed by the third photosensitive cells to light having a wavelength of 640 nm sensed by the sensor substrate is 60% or more.

18. The image sensor of claim 1 , further comprising an optical filter layer disposed above the color separation lens array to block infrared or ultraviolet light from among light incident on the color separation lens array.

19. 20. The image sensor of claim 18, wherein the optical filter layer comprises a first filter layer having a first refractive index and a second filter layer having a second refractive index stacked on the first filter layer.

20. 2. The image sensor of claim 1, wherein the transmittance area ratio of the spectral correction layer to light with wavelengths of 400 nm to 700 nm is 40% to 90%.

21. 2. The image sensor of claim 1, wherein the transmission area ratio of the spectral correction layer to light with wavelengths of 400 nm to 700 nm is 50% to 80%.

22. the spectral correction layer includes a first corrector formed on the first photosensitive cell, 2. The image sensor of claim 1, wherein the first corrector has a transmittance area ratio of 50% to 80% for light with wavelengths of 400 nm to 700 nm.

23. an image sensor according to any one of claims 1 to 22, which converts an optical image into an electrical signal; an electronic device including a processor for controlling the operation of said image sensor and for storing and outputting signals generated by said image sensor;

Images