Semiconductor manufacturing equipment and semiconductor device manufacturing method

Abstract

To provide a semiconductor manufacturing device which has a plurality of laser oscillators, and with which it is possible to always monitor the power of laser light for semiconductor device manufacturing.SOLUTION: A laser oscillator 1 radiates laser light L1, and a laser oscillator 2 radiates laser light L2. A splitter 3 receives the laser light L1 and the laser light L2 and separates these into laser light LM for measurement and laser light LP for manufacturing. A laser measuring member 4 is irradiated with the laser light LM for measurement, and real irradiation laser light RLP included in the laser light LP for manufacturing is used for manufacturing a semiconductor device and a semiconductor wafer 50 is irradiated therewith. The laser measuring member 4 receives the laser light LM for measurement and measures laser power for measurement which is the power of the laser light LM for measurement.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a technology relating to a semiconductor manufacturing apparatus having a plurality of laser oscillators and a method for manufacturing a semiconductor device using the semiconductor manufacturing apparatus. [Background technology]

[0002] An example of a semiconductor manufacturing device having a laser light irradiation function is the laser processing device disclosed in Patent Document 1. In this laser processing device, a temperature sensor is provided in a light absorbing member to measure the power of a pulsed laser beam, which is laser light. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2017-162961 Summary of the Invention [Problem to be solved by the invention]

[0004] The conventional laser processing apparatus described above had to switch between a processing state in which a pulsed laser beam is incident on a semiconductor wafer to anneal it, and a monitoring state in which the pulsed laser beam is incident on a light-absorbing member without annealing, and the power of the beam is monitored.

[0005] As described above, conventional laser processing devices have the problem that they cannot simultaneously perform processing and monitoring, and therefore cannot continuously perform annealing and monitor the beam power. To address this problem, an improved configuration can be considered in which the beam power is monitored by a PD (Photo Detector) during processing of semiconductor wafers.

[0006] However, with the improved configuration, there was a possibility of two problems occurring: (1) false detection due to the physical limitations of the PD, which can only receive a small amount of laser light, and (2) the pulse intervals between multiple laser beams cannot be read due to the short detection interval when multiple laser oscillators are used. Note that an example of a small amount of laser light would be laser light with a power of less than 1 W.

[0007] Furthermore, when the first and second defects described above occur, there is also the problem that the operation of the laser processing device stops.

[0008] As described above, conventional semiconductor manufacturing equipment with a laser light irradiation function has a problem in that it cannot continuously monitor the laser light used in manufacturing semiconductor devices, and this problem could not be solved even with the improved configuration described above. In particular, when conventional semiconductor manufacturing equipment has multiple laser oscillators, the second problem described above may occur, and the above problem becomes more pronounced.

[0009] The present disclosure has been made to solve the above-mentioned problems, and has as its object to provide a semiconductor manufacturing apparatus that has a plurality of laser oscillators and is capable of constantly monitoring the power of laser light used to manufacture semiconductor devices. [Means for solving the problem]

[0010] A semiconductor manufacturing apparatus according to the present disclosure includes a first laser oscillator that irradiates a first laser beam and a second laser oscillator that irradiates a second laser beam, wherein the second laser beam is irradiated after a delay time has elapsed since the irradiation of the first laser beam, and the delay time is set to a length that prevents the first and second laser beams from affecting each other. The semiconductor manufacturing apparatus further includes a splitter that receives the first and second laser beams, generates intermediate laser beams in which the optical axes of the first and second laser beams overlap, and splits the intermediate laser beam into measurement laser beam and manufacturing laser beam, and a laser measurement member that receives the measurement laser beam and measures the measurement laser power, which is the power of the measurement laser beam. The measurement laser beam and the manufacturing laser beam are split at a fixed ratio, and the manufacturing laser beam is used in the manufacture of a semiconductor device and is irradiated onto an object to be laser-irradiated. [Effects of the Invention]

[0011] The semiconductor manufacturing apparatus of the present disclosure has first and second laser oscillators, and can constantly measure the measurement laser power by a laser measurement member that receives measurement laser light.

[0012] Since the measurement laser light and the manufacturing laser light are separated at a fixed ratio, the manufacturing laser power can be determined based on the measurement laser power.

[0013] Therefore, the semiconductor manufacturing apparatus of the present disclosure has first and second laser oscillators, and can constantly monitor the manufacturing laser power during the manufacturing period of a semiconductor device using manufacturing laser light based on the first and second laser light. [Brief explanation of the drawings]

[0014] [Figure 1] FIG. 1 is an explanatory diagram schematically illustrating the configuration of a semiconductor manufacturing apparatus that is the basic technology of the present disclosure. [Figure 2] 10 is a graph showing the time variation of two laser beams. [Figure 3]1 is an explanatory diagram schematically illustrating the configuration of a semiconductor manufacturing apparatus according to a first embodiment. [Figure 4] FIG. 4 is an explanatory diagram showing the overall configuration of the damper shown in FIG. 3. [Figure 5] FIG. 5 is an explanatory diagram showing the configuration of the temperature sensor shown in FIG. [Figure 6] FIG. 10 is an explanatory diagram schematically showing the basic configuration of a semiconductor manufacturing apparatus according to a second embodiment. [Figure 7] FIG. 7 is an explanatory diagram (part 1) showing the overall configuration of the power meter measurement component group shown in FIG. 6. [Figure 8] FIG. 7 is an explanatory diagram (part 2) showing the overall configuration of the power meter measurement component group shown in FIG. 6. [Figure 9] FIG. 1 is an explanatory diagram (part 1) showing the overall configuration of a laser power meter. [Figure 10] FIG. 2 is an explanatory diagram (part 2) showing the overall configuration of the laser power meter. [Figure 11] FIG. 10 is an explanatory diagram (part 1) showing a modified example of the second embodiment. [Figure 12] FIG. 10 is an explanatory diagram (part 2) showing a modified example of the second embodiment. [Figure 13] 10 is a flowchart showing the flow of processing in a manufacturing method of a semiconductor device according to a third embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0015] <Basic technology> 1 is an explanatory diagram showing a schematic configuration of a semiconductor manufacturing apparatus 100 that is the basic technology of the present disclosure. As shown in the figure, the semiconductor manufacturing apparatus 100 that is the basic technology has laser oscillators 1 and 2 and functions as a laser annealing apparatus. In the basic technology, two laser oscillators 1 and 2 are shown as multiple laser oscillators.

[0016] A laser oscillator 1, which is a first laser oscillator, emits laser light L1, which becomes the first laser light. A laser oscillator 2, which is a second laser oscillator, emits laser light L2, which becomes the second laser light.

[0017] FIG. 2 is a graph showing the time changes of laser beams L1 and L2. In the figure, the horizontal axis represents time change and the vertical axis represents intensity (power). As shown in the figure, there is a delay time ΔT between laser beams L1 and L2 contained in intermediate laser beam Lb, which will be described later. In other words, laser beam L2, which is the second laser beam, is irradiated after delay time ΔT has elapsed since irradiation of laser beam L1, which is the first laser beam. The delay time ΔT is set to a length that prevents laser beams L1 and L2 from affecting each other.

[0018] The laser beams L1 and L2 may be, for example, a pulsed laser beam with a wavelength of 300 to 600 nm, specifically, the second harmonic (wavelength 527 nm) of an Nd:YLF laser. Note that "Nd:YLF laser" refers to a YLF laser doped with Nd.

[0019] Laser light L1 emitted from laser oscillator 1, which is a first laser oscillator, is reflected by mirrors 11 and 12 and then enters splitter 3. Laser light L2 emitted from laser oscillator 2, which is a second laser oscillator, is reflected by mirrors 13 and 14 and then enters splitter 3. In splitter 3, the incident surface of laser light L1 and the incident surface of laser light L2 are set to different surfaces. Note that mirrors 11 to 14 function as total reflection mirrors that reflect all of the incident light.

[0020] Splitter 3 receives laser beams L1 and L2, overlaps the optical axes of laser beams L1 and L2 to temporarily generate intermediate laser beam Lb, and splits intermediate laser beam Lb into measurement laser beam LM and manufacturing laser beam LP. Measurement laser beam LM and manufacturing laser beam LP are split at a fixed ratio.

[0021] 2, by providing a delay time ΔT between the laser beams L1 and L2 included in the intermediate laser beam Lb, the laser beams L1 and L2 are irradiated onto the splitter 3 at timings that do not affect each other. For example, the delay time ΔT is set so that the pulse widths DP of the laser beams L1 and L2 are equal to or greater than a reference width.

[0022] Therefore, as shown in FIG. 2, at time t1 when the power of laser light L1 reaches a maximum, laser light L1 becomes intermediate laser light Lb, and intermediate laser light Lb is split into measurement laser light LM and manufacturing laser light LP.

[0023] Similarly, as shown in FIG. 2, at time t2 when the power of laser beam L2 reaches a maximum, laser beam L2 becomes intermediate laser beam Lb, and intermediate laser beam Lb is split into measurement laser beam LM and manufacturing laser beam LP.

[0024] Measurement laser beam LM is irradiated onto laser measurement member 4, and manufacturing laser beam LP is irradiated toward mirror 15. Of the manufacturing laser beam LP, actual irradiation laser beam RLP, which will be described later, is used for manufacturing a semiconductor device.

[0025] The laser measurement member 4 receives the measurement laser light LM and measures the measurement laser power, which is the power of the measurement laser light LM.

[0026] Mirror 15 included in the light separating member reflects most of manufacturing laser beam LP and transmits a portion of it. Actual irradiation laser beam RLP obtained by manufacturing laser beam LP being reflected by mirror 15 is irradiated toward chamber 5.

[0027] The chamber 5, which is an object holding member, has a semiconductor wafer 50 placed on a wafer placing table (not shown), for example. The semiconductor wafer 50 has first and second main surfaces, with the first main surface being the laser receiving surface and the second main surface being the surface that comes into contact with the wafer placing table. In this way, the chamber 5, which is an object holding member, holds the semiconductor wafer 50 therein.

[0028] Mirror 15 included in the light separating member transmits a portion of manufacturing laser beam LP. Observation laser beam L15 obtained by manufacturing laser beam LP passing through mirror 15 is irradiated toward mirror 16.

[0029] In this way, manufacturing laser beam LP is split into actual irradiation laser beam RLP and observation laser beam L15 by mirror 15. Observation laser beam L15 and actual irradiation laser beam RLP are split at a constant ratio.

[0030] The actual irradiation laser light RLP is irradiated toward the first main surface of the semiconductor wafer 50 inside the chamber 5. The step of irradiating the first main surface of the semiconductor wafer 50 with the actual irradiation laser light RLP is an annealing step, which is one step in the method for manufacturing a semiconductor device. In this way, the actual irradiation laser light RLP included in the manufacturing laser light LP is used in the manufacture of a semiconductor device, and is irradiated onto the first main surface of the semiconductor wafer 50.

[0031] A mirror 16 included in the light separating member and functioning as a half mirror reflects a part of the observation laser light L15. The observation laser light L15 is reflected by the mirror 16, and auxiliary measurement laser light LSM is obtained and is irradiated toward a PD (Photo Detector) 6.

[0032] A mirror 16 included in the light separating member transmits a part of the observation laser light L15. The observation laser light L15 passes through the mirror 16, and a profile laser light LF is obtained, which is irradiated toward the profiler 7.

[0033] In this way, the observation laser light L15 is split into the auxiliary measurement laser light LSM and the profile laser light LF by the mirror 16. The auxiliary measurement laser light LSM and the profile laser light LF are split at a constant ratio.

[0034] As described above, mirror 15 separates manufacturing laser beam LP into actual irradiation laser beam RLP and observation laser beam L15, and observation laser beam L15 and actual irradiation laser beam RLP are separated at a constant ratio. Also, mirror 16 separates observation laser beam L15 into auxiliary measurement laser beam LSM and profile laser beam LF, and auxiliary measurement laser beam LSM and profile laser beam LF are separated at a constant ratio.

[0035] Therefore, the light separating member including mirror 15 and mirror 16 separates the auxiliary measurement laser light LSM and the actual irradiation laser light RLP at a constant ratio with respect to the manufacturing laser light LP.

[0036] The auxiliary laser measurement member PD6 receives the auxiliary measurement laser light LSM, measures the auxiliary measurement laser power, which is the power of the auxiliary measurement laser light LSM, and converts the measured auxiliary measurement laser power into an electrical signal. PD6 can monitor the waveforms of the laser lights L1 and L2, the delay time ΔT, etc., and can measure the auxiliary measurement laser power at 2-second intervals, for example.

[0037] The profiler 7 measures the beam diameter and spatial intensity distribution of the actual irradiated laser light RLP from the profile laser light LF.

[0038] The semiconductor manufacturing apparatus 100, which is the basic technology of the present disclosure described above, has two laser oscillators 1 and 2 that irradiate laser light L1 and L2, and can constantly measure the measurement laser power by a laser measurement member 4 that receives measurement laser light LM based on the laser light L1 and L2.

[0039] Since the measurement laser light LM and the manufacturing laser light LP are separated at a certain ratio, the manufacturing laser power of the manufacturing laser light LP can be determined based on the measurement laser power of the measurement laser light LM measured by the laser measurement member 4.

[0040] Since the majority of the manufacturing laser light LP is the actual irradiation laser light RLP, there is no practical problem in using the manufacturing laser power as the actual irradiation laser power of the actual irradiation laser light RLP. Moreover, since the ratio of the actual irradiation laser light RLP to the manufacturing laser light LP is also constant, the actual irradiation laser power of the actual irradiation laser light RLP can also be found based on the measurement laser power.

[0041] Therefore, the semiconductor manufacturing apparatus 100, which is the basic technology of the present disclosure, has laser oscillators 1 and 2, and by measuring the measurement laser power using the laser measuring member 4, it is possible to constantly monitor the manufacturing laser power (actual irradiation laser power) during the manufacturing period of a semiconductor device using the actual irradiation laser light RLP contained in the manufacturing laser light LP.

[0042] The semiconductor manufacturing apparatus 100, which is the basic technology of the present disclosure, can constantly measure the auxiliary measurement laser power by using the auxiliary laser measurement member PD6 that receives the auxiliary measurement laser light LSM.

[0043] Because the actual irradiation laser light RLP and the auxiliary measurement laser light LSM are separated at a fixed ratio, the manufacturing laser power (actual irradiation laser power) can be obtained based on the auxiliary measurement laser power measured by PD 6. In this way, the manufacturing laser power can be constantly monitored by PD 6 in addition to laser measurement member 4.

[0044] As a result, the semiconductor manufacturing apparatus 100, which is the basic technology of the present disclosure, can constantly monitor the manufacturing laser power by measuring the auxiliary measurement laser power using the auxiliary laser measuring member PD6, even when the measurement laser power cannot be measured using the laser measuring member 4 during the manufacturing period of a semiconductor device using the actual irradiation laser light RLP.

[0045] Furthermore, even if the delay time ΔT between the laser beams L1 and L2 cannot be accurately measured by the laser measuring member 4 due to the overlapping state of the laser pulses between the laser beams L1 and L2, the delay time ΔT can be accurately measured by constantly monitoring the auxiliary measurement laser power using the PD6.

[0046] In this way, by providing semiconductor manufacturing equipment 100 with PD6 as an auxiliary laser measuring member in addition to laser measuring member 4, even in situations where an error would occur with only laser measuring member 4, resulting in unnecessary equipment shutdowns, the provision of PD6 can prevent error phenomena such as equipment shutdowns described above and improve productivity. For example, the laser measuring member 4 can be used to display the manufacturing laser power, and PD6 can be used for interlocking, for example.

[0047] Using the semiconductor manufacturing apparatus 100 shown in FIG. 1 as a basic technology, an apparatus that embodies the laser measuring member 4 becomes a semiconductor manufacturing apparatus 101 of a first embodiment and a semiconductor manufacturing apparatus 102 of a second embodiment described below.

[0048] <First Embodiment> 3 is an explanatory diagram schematically illustrating the configuration of semiconductor manufacturing apparatus 101 according to the first embodiment of the present disclosure. As shown in the figure, in the first embodiment, a damper 40 is used as the laser measuring member 4. The damper 40 is a laser measuring member equivalent to a device called a "beam damper" that safely and temporarily blocks high-power laser light.

[0049] Hereinafter, the same components as those in the basic technology shown in FIGS. 1 and 2 will be assigned the same reference numerals and explanations thereof will be omitted as appropriate, and the description will focus on the characteristic parts of the semiconductor manufacturing apparatus 101 of the first embodiment.

[0050] FIG. 4 is an explanatory diagram showing the overall configuration of the damper 40. An XYZ Cartesian coordinate system is shown in FIG. 4. In the figure, the numerical values ​​in parentheses indicate dimensions, and are expressed in millimeters. The damper 40 has a main body 48, and an opening 40a is provided in the center above the main body 48, with the opening 40a positioned opposite the measurement laser light LM. In FIG. 4, it is assumed that the measurement laser light LM is irradiated in the +Y direction.

[0051] The main body 48 has a bottom 48b and a main portion 48a disposed on the bottom 48b, and the bottom 48b is wider than the main portion 48a. The width of the bottom 48b in the X direction is 66 mm.

[0052] Two one-touch pipe fittings 46 are provided on the side surface on the −X direction side of the main body 48. By connecting piping tubes (not shown) to the two one-touch pipe fittings 46, cooling water can be circulated inside the main body 48.

[0053] A ceramic light receiving part 45 is disposed inside the main body part 48, and the measurement laser light LM is received by the ceramic light receiving part 45 through the opening part 40a. At this time, the measurement laser light LM is irradiated onto or near the center position C45 of the ceramic light receiving part 45.

[0054] The ceramic light receiving unit 45 includes a plurality of ceramic light receiving members, each of which has an octagonal shape in a plan view and is arranged in a stack from the opening 40a toward the depth along the +Y direction. From the viewpoints of heat resistance, abrasion resistance, and corrosion resistance, the ceramic light receiving unit 45 has a laser receiving function that safely and temporarily blocks the high-power measurement laser light LM.

[0055] 4, the height in the Z direction from the bottom surface of the bottom portion 48b to the center of the lower one-touch fitting 46 is 62.5 mm, and the distance in the height direction between the two one-touch fittings 46, 46 is 45 mm. In addition, the height from the bottom surface of the bottom portion 48b to the center position C45 of the ceramic light-receiving part 45 is 85 mm, and the height from the bottom surface of the bottom portion 48b to the top surface of the main part 48a is 120 mm.

[0056] In this way, the ceramic light receiving portion 45 in the damper 40 receives the measurement laser light LM and has a laser receiving function as a light receiving portion made of ceramics.

[0057] Furthermore, the temperature sensor 41 is provided in a manner that it is wound around the base region of the main portion 48a of the body 48 where the main portion 48a joins the bottom portion 48b. The temperature sensor 41 is attached to the bottom portion 48b using, for example, heat-resistant tape.

[0058] The temperature sensor 41 is provided in a sensor placement area that is relatively far from the opening 40a. The measurement laser light LM is irradiated onto the center position C45 of the ceramic light receiving part 45 or its periphery, so the sensor placement area does not receive the measurement laser light LM.

[0059] 5 is an explanatory diagram showing the configuration of temperature sensor 41. As shown in the figure, temperature sensor 41 includes, as its main components, aluminum block 42, leads 43, aluminum block 44, and three aluminum blocks 47. In the figure, the numbers in parentheses indicate dimensions, and are expressed in millimeters.

[0060] Lead 43 has a thick main line and three branch lines, with aluminum block 42 attached to one end of the main line and aluminum block 44 attached to the other end of the main line, and aluminum blocks 47 attached to the ends of each of the three branch lines. The three branch lines are connected to screw terminals of a display, temperature controller, etc. (not shown), for example.

[0061] The aluminum blocks 42, 44, and three aluminum blocks 47 are provided to protect the leads 43. The leads 43 are made up of, for example, conductive lead wires and a fluororesin coating that coats the lead wires.

[0062] 5, aluminum block 42 is rectangular in plan view with long sides of 20 mm and short sides of 8 mm, protects one end of lead 43, and is electrically connected to the lead wire of lead 43. The total length of lead 43 is set to about 3000 mm.

[0063] The damper 40 has the temperature sensor 41 attached to the body 48 in such a manner that the lead 43 is wound around the lower region of the main portion 48 a of the body 48 .

[0064] The lead wire constituting the lead 43 functions as a temperature resistor, and as described above, the temperature sensor 41 is provided in a sensor placement area that is sufficiently separated from the opening 40a and does not receive the measurement laser light LM. For convenience of explanation, the following description may be given assuming that the lead 43 functions as a temperature resistor.

[0065] Meanwhile, the temperature change of the ceramic light receiving part 45 is also transmitted to the main body 48, and then to the lead 43 of the temperature sensor 41 via the main part 48a of the main body 48. Therefore, the resistance value of the lead 43, which is a resistance temperature detector, changes in accordance with the temperature change of the ceramic light receiving part 45. The resistance value of the lead 43 (lead wire) is measured by a temperature measuring device (not shown) electrically connected to the aluminum block 42 or the like, and the light receiving part temperature, which is the temperature of the ceramic light receiving part 45, is determined based on the measured resistance value. The temperature measuring device may be built into the temperature sensor 41 or provided outside the temperature sensor 41.

[0066] The semiconductor manufacturing apparatus 101 of the first embodiment has the following advantages in addition to the advantages of the semiconductor manufacturing apparatus 100 of the basic technology.

[0067] In the damper 40 of the semiconductor manufacturing equipment 101 of embodiment 1, the ceramic light receiving part 45 made of ceramic has a laser receiving function, and therefore the ceramic light receiving part 45 can safely temporarily block the high-power measurement laser light LM.

[0068] In addition, the temperature sensor 41 of the damper 40 has leads 43 whose resistance value changes with changes in the temperature of the ceramic light receiving part 45, so that the light receiving part temperature, which is the temperature of the ceramic light receiving part 45, can be accurately determined based on the resistance value of the leads 43 (lead wires), which are temperature resistors. The temperature sensor 41 is provided in a sensor placement area that does not receive the measurement laser light LM, so it is not affected by the irradiation of the measurement laser light LM.

[0069] Therefore, the temperature sensor 41 can be used to continuously measure the temperature of the light receiving part associated with the high-output measurement laser light LM of 1 W or more, without the temperature sensor 41 being burned out by the measurement laser light LM.

[0070] Therefore, the semiconductor manufacturing apparatus 101 of embodiment 1 can accurately measure the measurement laser power of the measurement laser light LM based on the light receiving temperature of the ceramic light receiving part 45, which is measured using the temperature sensor 41 of the damper 40 that functions as the laser measurement member 4.

[0071] Furthermore, even when the power of manufacturing laser light LP (actual irradiation laser light RLP) is changed depending on the annealing conditions, the change in manufacturing laser power can be managed accurately from the temperature of the light receiving part of damper 40.

[0072] For example, by adjusting the energy ratio between the measurement laser light LM and the manufacturing laser light LP using splitter 3, which is a beam splitter, the temperature of the light receiving part of damper 40 can be changed, and the annealing process can be monitored under manufacturing conditions 1 to 3 as follows.

[0073] Manufacturing condition 1 is a condition in which the energy (power) of the manufacturing laser beam LP is relatively large and the energy of the measurement laser beam LM is relatively small. Under manufacturing condition 1, the temperature change range of the light receiving part temperature can be set to a relatively low first temperature zone.

[0074] Manufacturing condition 2 is a condition in which the energy (power) of the manufacturing laser beam LP is relatively small and the energy of the measurement laser beam LM is relatively large. Under manufacturing condition 2, the temperature change range of the light receiving part temperature can be set to a relatively high second temperature zone.

[0075] Manufacturing condition 3 is a condition in which the energy (power) of the manufacturing laser beam LP and the energy of the measurement laser beam LM are approximately the same. Under manufacturing condition 3, the temperature change range of the light receiving part temperature can be set to an intermediate temperature zone between the first and second temperature zones.

[0076] It is possible to select a condition from manufacturing conditions 1 to 3 that falls within a temperature change range in which a change in the resistance value of lead 43 is likely to occur. For example, if the light-receiving part temperature of ceramic light-receiving part 45 is set to change between 40 and 50°C, the light-receiving part temperature can be accurately determined using temperature sensor 41 having lead 43, which is a temperature resistor suitable for relatively low temperatures.

[0077] The above-mentioned manufacturing conditions 1 to 3 are merely examples, and the combination of energy (power) distribution can be adjusted appropriately depending on the manufacturing conditions.

[0078] <Embodiment 2> 6 is an explanatory diagram schematically illustrating a basic configuration of a semiconductor manufacturing apparatus 102 according to a second embodiment of the present disclosure. As shown in the drawing, a power meter measurement component group 8 is used as the laser measurement member 4 in the second embodiment.

[0079] Hereinafter, the same components as those in the basic technology shown in FIGS. 1 and 2 will be assigned the same reference numerals and explanations thereof will be omitted as appropriate, and the description will focus on the characteristic features of semiconductor manufacturing apparatus 102 according to the second embodiment.

[0080] 7 and 8 are explanatory diagrams showing the overall configuration of the power meter measurement component group 8. FIGS. 9 and 10 are explanatory diagrams showing the overall configuration of a laser power meter 60, which is a main component of the power meter measurement component group 8. In FIGS. 7 to 10, the numbers in parentheses indicate dimensions in mm. Each of FIGS. 7 to 10 shows an XYZ Cartesian coordinate system. In FIGS. 7 to 10, it is assumed that the measurement laser light LM is irradiated in the +Y direction.

[0081] 7 and 8, the power meter measurement component group 8 is configured to include a laser power meter 60, a support jig 62, and an aluminum cover 65. The aluminum cover 65 has a storage space S65, and stores the laser power meter 60 and the support jig 62 in the storage space S65.

[0082] Specifically, the aluminum cover 65 has side surfaces on the +Y, +X, and -X sides other than the -Y side, and has a top surface on the +Z side. Therefore, the aluminum cover 65 houses the laser power meter 60 and the supporting jig 62 in a housing space S65 formed by the three side surfaces and one top surface.

[0083] In this way, the aluminum cover 65 functions as a metal cover member made of aluminum. The thickness of the aluminum cover 65 is set to 2 mm or more. As shown in Fig. 7, the width of the aluminum cover 65 in the X direction is set to 130 mm, and the height in the Z direction is set to 250 mm. As shown in Fig. 8, the depth of the aluminum cover 65 in the +Y direction is set to a sufficiently long 150 mm.

[0084] A laser power meter 60, which is a laser measuring device, is supported from below by a support jig 62, which includes a support base 620, a main body 621, a height adjustment knob 622, and a connection shaft 623 as its main components.

[0085] 9 and 10, a main body 621 is fixedly provided on a support base 620, and the main body 621 holds a connecting shaft 623 in an extendable manner. The length of the connecting shaft 623 protruding from the top surface of the main body 621 can be adjusted by extending or retracting the connecting shaft 623 along the Z direction. The extension or retraction of the connecting shaft 623 is performed using a height adjustment knob 622. As shown in FIG. 9, the forming width of the support base 620 in the X direction is set to 100 mm, and as shown in FIG. 10, the forming width of the support base 620 in the Y direction is set to 75 mm.

[0086] A laser power meter 60, which is a laser measurement device, is fixed to the upper part of a connection shaft 623. Therefore, the support jig 62 has a height adjustment function that changes the formation height of the laser power meter 60 by extending or contracting the connection shaft 623 held by the main body 621 along the Z direction. In the example shown in Fig. 9, the placement height H60 of the laser power meter 60 can be adjusted in the range of 112 to 158 mm. The placement height H60 is the length along the Z direction from the bottom surface of the support base 620 to the center position C60 of the measurement unit 60a.

[0087] The laser power meter 60, which is a laser measurement device, has a rectangular shape with rounded corners when viewed in a planar view on the XZ plane. In the example shown in FIG. 9, it has a square shape with sides of 100 mm. When viewed in a planar view on the XZ plane of the laser power meter 60, a measurement unit 60a is located in the center. When viewed in a planar view on the XZ plane, the measurement unit 60a has a circular shape with a radius of φ50 from a center position C60. The measurement unit 60a has a light-receiving surface F60 for the measurement laser light LM, and the light-receiving surface F60 has a planar structure parallel to the XZ plane. In this way, the measurement unit 60a has a planar light-receiving surface F60 that receives the measurement laser light LM.

[0088] When the connecting shaft 623 expands and contracts along the Z direction, the measurement unit 60a of the laser power meter 60 also moves along the Z direction. Therefore, even if the measurement unit 60a moves along the Z direction, the light receiving surface F60 always becomes a plane parallel to the XZ plane.

[0089] An integrated housing structure is formed by combining multiple housing members 60c. The multiple housing members 60c are fixed together by screwing them into screw holes 60b. The screw holes 60b are provided above and below the multiple measuring units 60a. The measuring units 60a are surrounded by the integrated housing structure. Figure 10 shows seven housing members 60c as the multiple housing members 60c.

[0090] 10, the film thickness of each of the seven housing members 60c is 2.5 mm, and the spacing between each of six pairs of adjacent housing members 60c, 60c among the seven housing members 60c is 3.5 mm. Therefore, the thickness of the integrated housing structure along the Y direction is 38.5 mm. In addition, the length from the center of the connection shaft 623 to the housing member 60c located furthest to the +Y direction in the integrated housing structure is set to 16 mm.

[0091] The measurement unit 60a is disposed at a position facing the measurement laser light LM. The laser power meter 60 directly measures the measurement laser power of the measurement laser light LM by converting the power of the measurement laser light LM received by the measurement unit 60a into an electrical signal. As described above, in FIGS. 7 to 10, the measurement laser light LM is irradiated in the +Y direction.

[0092] In this way, the semiconductor manufacturing apparatus 102 of the second embodiment is provided with a power meter measurement component group 8 having a laser power meter 60 as the laser measurement member 4 instead of the damper 40 of the first embodiment, thereby making it possible to directly measure high measurement laser powers exceeding 1 W.

[0093] That is, the measurement unit 60a of the laser power meter 60 receives the measurement laser light LM and directly measures the measurement laser power. For example, the measurement unit 60a of the laser power meter 60 can measure the average power of the measurement laser light LM, which becomes a pulse laser beam, over a certain time width.

[0094] The aluminum cover 65 accommodates the aluminum cover 65 and the supporting jig 62 in the accommodation space S65 without interfering with the reception of the measurement laser light LM by the measurement unit 60a of the laser power meter 60. In this way, the aluminum cover 65 functions as a metallic cover member having the accommodation space S65 that accommodates the measurement unit 60a without interfering with the reception of the measurement laser light LM by the measurement unit 60a.

[0095] The semiconductor manufacturing apparatus 102 of the second embodiment has the following advantages in addition to the advantages of the semiconductor manufacturing apparatus 100 of the basic technology.

[0096] The semiconductor manufacturing apparatus 102 of the second embodiment employs a power meter measurement component group 8 as the laser measurement member 4. The power meter measurement component group 8 includes a support jig 62 having a height adjustment function for adjusting the placement height H60 of the laser power meter 60, so that the height at which the measurement laser light LM is received by the measurement unit 60a can be set to an appropriate height.

[0097] As a result, in semiconductor manufacturing apparatus 102 according to the second embodiment, measurement unit 60a of laser power meter 60 can measure the measurement laser power of measurement laser light LM with high accuracy.

[0098] Furthermore, semiconductor manufacturing apparatus 102 of the second embodiment accommodates laser power meter 60 in accommodation space S65 of aluminum cover 65, which is a metal cover member. Therefore, aluminum cover 65 can prevent scattered light of measurement laser light LM from measuring unit 60a from leaking outside power meter measurement component group 8.

[0099] As a result, in semiconductor manufacturing apparatus 102 of the second embodiment, scattered light of measurement laser beam LM does not affect manufacturing laser beam LP.

[0100] (Variation) 11 and 12 are explanatory diagrams showing a modified example of the second embodiment. Each of Fig. 11 and Fig. 12 shows an XYZ Cartesian coordinate system. In the basic configuration shown in Figs. 7 to 10, the angle of the bottom surface of the support base 620 with respect to the horizontal line LH is "0". Note that the horizontal line LH is a reference line parallel to the Y direction.

[0101] As shown in Fig. 11, in the modified example, the support base 620 is inclined at an angle α with respect to the horizontal line LH. That is, in the modified example shown in Figs. 11 and 12, the bottom surface of the support base 620 is inclined at a significant angle α, which is not "0", toward the +Z direction with respect to the horizontal line LH. As in the basic configuration, in the modified example, the irradiation direction DL of the measurement laser light LM is along the +Y direction. In order to stably maintain the inclination at the angle α, it is desirable to separately provide a support base fixing component for fixing the support base 620.

[0102] 12, the normal direction V60 of the light receiving surface F60 has an angle α directed downward (in the -Z direction) with respect to the irradiation direction DL of the measurement laser light LM. Therefore, the measurement laser light LM, which is irradiated in the irradiation direction DL along the +Y direction, is reflected by the light receiving surface F60 of the measurement unit 60a, and the reflected measurement laser light LM2 is directed downward. The angle α is set so that the reflected measurement laser light LM2 fits within the storage space S65. The angle α can be, for example, 30 degrees.

[0103] That is, the modified example of the second embodiment is characterized in that a significant inclination angle α is provided between the irradiation direction DL of the measurement laser light LM and the normal direction V60 of the light receiving surface F60 so that the measurement laser reflected light LM2, which is the reflected light of the measurement laser light LM, is contained within the storage space S65 of the aluminum cover 65.

[0104] In this way, the supporting jig 62 in the modified example of the second embodiment supports the laser power meter 60 by providing a significant angle α between the irradiation direction DL of the measurement laser light LM and the normal direction V60 of the light receiving surface F60 so that the reflected measurement laser light LM2 is contained within the storage space S65 of the aluminum cover 65.

[0105] Therefore, in the modification of the second embodiment, the direction of the reflected measurement laser light LM2 is forced downward to prevent the reflected measurement laser light LM2 from leaking out of the accommodation space S65 of the aluminum cover 65.

[0106] Since the supporting jig 62 in the modified example of the semiconductor manufacturing apparatus 102 of the second embodiment has the above-mentioned characteristics, the reflected light (reflected measurement laser light LM2) and scattered light of the measurement laser light LM can be confined within the storage space S65 of the aluminum cover 65.

[0107] As a result, the modification of the second embodiment can further reduce the influence of the measurement laser beam LM on the manufacturing laser beam LP.

[0108] <Third Embodiment> The third embodiment is a method for manufacturing a semiconductor device using a semiconductor manufacturing apparatus. The semiconductor manufacturing apparatus is any one of the semiconductor manufacturing apparatus 100 of the basic technology shown in Figures 1 and 2, the semiconductor manufacturing apparatus 101 of the first embodiment shown in Figures 3 to 5, and the semiconductor manufacturing apparatus 102 of the second embodiment shown in Figures 6 to 12. The semiconductor manufacturing apparatus 102 of the second embodiment includes the modified example shown in Figures 11 and 12.

[0109] 13 is a flowchart showing the process flow of the semiconductor device manufacturing method according to the third embodiment of the present disclosure. The process flow of the semiconductor device manufacturing method according to the third embodiment will be described below using the semiconductor manufacturing apparatus 100 as an example.

[0110] In the third embodiment, the object to be irradiated with laser is a semiconductor wafer 50 having first and second main surfaces, and the semiconductor wafer 50 is held by a chamber 5 which is an object holding member.

[0111] First, in step ST11, impurity ions are implanted into the semiconductor wafer 50 from the first main surface side.

[0112] The semiconductor elements formed on the semiconductor wafer 50 by the ion implantation process of step ST11 may be power semiconductor elements, and examples of the power semiconductor elements include diode elements and switching elements.

[0113] Possible constituent materials for the semiconductor wafer 50 include, for example, silicon, silicon carbide, gallium nitride-based materials, gallium oxide-based materials, diamond, etc. In addition to silicon, wide bandgap semiconductors with a larger bandgap than silicon may also be used as constituent materials.

[0114] After step ST11 is performed, in step ST12, semiconductor manufacturing apparatus 100 is used to irradiate semiconductor wafer 50 from the first main surface side with actual irradiation laser light RLP included in manufacturing laser light LP, thereby activating impurity ions implanted in semiconductor wafer 50. As a result, the impurities implanted in semiconductor wafer 50 are diffused.

[0115] In this way, the processing of step ST12 is an annealing process that involves heat treatment for activating the impurities ion-implanted during execution of step ST11. During the annealing process of step ST12, semiconductor wafer 50 is irradiated with actual irradiation laser light RLP included in manufacturing laser light LP.

[0116] The annealing process using the actual irradiation laser light RLP needs to be performed at a high power of, for example, 1 W or more in order to activate the impurity ions, and in this respect, the semiconductor manufacturing apparatus 100 that irradiates the actual irradiation laser light RLP is a useful manufacturing apparatus, because the amount of heat generated by the two laser lights L1 and L2 is greater than the amount of heat generated by a single laser light.

[0117] In particular, productivity can be improved when the semiconductor wafer 50 is a large diameter wafer such as 8 inches or 12 inches. Furthermore, when annealing a semiconductor wafer 50 made of a wide band gap semiconductor such as silicon carbide (SiC), the annealing process must be performed at a higher temperature than for a semiconductor wafer 50 made of silicon. In this respect, too, the semiconductor manufacturing apparatus 100 that irradiates actual irradiation laser light RLP with a relatively high output is a useful manufacturing apparatus.

[0118] After step ST11 is performed, in step ST13 which is performed in parallel with step ST12 described above, semiconductor manufacturing apparatus 100 is used to monitor the measurement laser power of measurement laser light LM measured by laser measurement member 4.

[0119] At this time, the auxiliary measurement laser power of the auxiliary measurement laser light LSM is also monitored by the PD6.

[0120] In the method for manufacturing a semiconductor device according to the third embodiment, the processes of steps ST12 and ST13 are performed using one of semiconductor manufacturing equipment 100, semiconductor manufacturing equipment 101, and semiconductor manufacturing equipment .

[0121] Therefore, in the semiconductor device manufacturing method of embodiment 3, by monitoring the measurement laser power in step ST13 and verifying the manufacturing laser power (actual irradiation laser power), it is possible to constantly monitor whether the annealing process in step ST12 is being performed properly.

[0122] <Other> It should be noted that, within the scope of the present disclosure, it is possible to freely combine the embodiments, and to modify or omit the embodiments as appropriate.

[0123] For example, in the above-described basic technology and embodiment, the semiconductor manufacturing equipment 100-102 is configured with two laser oscillators 1 and 2, but it may be configured with three or more laser oscillators. In this case, an optical separation technique is used in which the optical axes of multiple laser beams emitted from three or more laser oscillators are overlapped to temporarily generate intermediate laser beam, and the intermediate laser beam is separated into measurement laser beam LM and manufacturing laser beam LP.

[0124] By irradiating three or more laser beams, more heat can be generated than by irradiating two laser beams, so semiconductor manufacturing equipment having three or more laser oscillators can further enhance the annealing effect.

[0125] Various aspects of the present disclosure are summarized below as appendices.

[0126] (Appendix 1) a first laser oscillator that emits a first laser beam; a second laser oscillator that irradiates a second laser beam, the second laser beam being irradiated after a delay time has elapsed since the irradiation of the first laser beam, and the delay time being set to a length such that the first and second laser beams are not affected by each other; a splitter that receives the first and second laser beams, generates an intermediate laser beam by overlapping optical axes of the first and second laser beams, and splits the intermediate laser beam into a measurement laser beam and a manufacturing laser beam; a laser measuring member that receives the measurement laser light and measures a measurement laser power that is a power of the measurement laser light, the measurement laser beam and the manufacturing laser beam are separated at a certain ratio, The manufacturing laser light is used in manufacturing a semiconductor device and is irradiated onto a laser irradiation target. Semiconductor manufacturing equipment.

[0127] (Appendix 2) 2. The semiconductor manufacturing apparatus according to claim 1, The laser measurement member is a light receiving unit that receives the measurement laser light and is made of ceramics; a temperature sensor having a resistance temperature detector and provided in a sensor arrangement area that does not receive the measurement laser light, The resistance temperature detector changes its resistance value in accordance with a change in temperature of the light receiving portion. Semiconductor manufacturing equipment.

[0128] (Appendix 3) 2. The semiconductor manufacturing apparatus according to claim 1, The laser measurement member is a laser measuring device having a measuring unit that receives the measurement laser light and directly measures the measurement laser power; a support jig that supports the laser measuring device from below, The support jig has a height adjustment function for adjusting the placement height of the measurement unit. Semiconductor manufacturing equipment.

[0129] (Appendix 4) 4. The semiconductor manufacturing apparatus according to claim 3, The laser measurement member is a metal cover member having an accommodation space for accommodating the laser measuring device and the supporting jig without interfering with reception of the measurement laser light by the measuring unit; Semiconductor manufacturing equipment.

[0130] (Appendix 5) 5. The semiconductor manufacturing apparatus according to claim 4, the measurement unit has a light receiving surface with a planar structure that receives the measurement laser light, The supporting jig is the laser measuring device is supported with a significant inclination between the irradiation direction of the measurement laser light and the normal direction of the light receiving surface so that the reflected light of the measurement laser light is contained within the accommodation space of the cover member. Semiconductor manufacturing equipment.

[0131] (Appendix 6) 6. A semiconductor manufacturing apparatus according to any one of Supplementary Note 1 to Supplementary Note 5, an object holding member that holds the laser irradiation object; a light separating member that separates the manufacturing laser beam into an actual irradiation laser beam and an auxiliary measurement laser beam, the auxiliary measurement laser light and the actual irradiation laser light are separated at a certain ratio, the actual irradiation laser light included in the manufacturing laser light is used for manufacturing a semiconductor device, the laser irradiation target is positioned to receive the actual irradiation laser light, The semiconductor manufacturing device includes: further comprising an auxiliary laser measurement member that receives the auxiliary measurement laser light and measures an auxiliary measurement laser power, which is the power of the auxiliary measurement laser light; Semiconductor manufacturing equipment.

[0132] (Appendix 7) A method for manufacturing a semiconductor device using the semiconductor manufacturing apparatus according to any one of Supplementary Note 1 to Supplementary Note 6, the laser irradiation object includes a semiconductor wafer, (a) implanting impurity ions into the semiconductor wafer; (b) irradiating the semiconductor wafer with the manufacturing laser light using the semiconductor manufacturing equipment to activate the impurity ions implanted in the semiconductor wafer; (c) a step, which is executed in parallel with the step (b), of monitoring the measurement laser power measured by the laser measurement member using the semiconductor manufacturing apparatus. A method for manufacturing a semiconductor device. [Explanation of symbols]

[0133] 1, 2 laser oscillator, 3 splitter, 4 laser measurement component, 5 chamber, 6 PD, 7 profiler, 8 power meter measurement component group, 11 to 16 mirrors, 40 damper, 41 temperature sensor, 45 ceramic light receiving part, 50 semiconductor wafer, 60 laser power meter, 60a measurement part, 62 support jig, 65 aluminum cover, 620 support base, 621 main body, 622 height adjustment knob, 623 connection shaft, LM measurement laser light, LM2 measurement laser reflected light, LP manufacturing laser light, LSM auxiliary measurement laser light, RLP actual irradiation laser light.

Claims

1. A semiconductor manufacturing apparatus, a first laser oscillator that emits a first laser beam; a second laser oscillator for irradiating a second laser beam, the second laser beam being irradiated after a delay time has elapsed since the irradiation of the first laser beam, and the delay time being set to a length such that the first and second laser beams are not affected by each other; a splitter that receives the first and second laser beams, generates an intermediate laser beam by overlapping optical axes of the first and second laser beams, and splits the intermediate laser beam into a measurement laser beam and a manufacturing laser beam; a laser measuring member that receives the measurement laser light and measures a measurement laser power that is a power of the measurement laser light, the measurement laser beam and the manufacturing laser beam are separated at a certain ratio, the manufacturing laser beam is used in manufacturing a semiconductor device, and is irradiated onto an object to be irradiated with the laser beam; Semiconductor manufacturing equipment an object holding member that holds the laser irradiation object; a light separating member that separates the manufacturing laser beam into an actual irradiation laser beam and an auxiliary measurement laser beam, the auxiliary measurement laser light and the actual irradiation laser light are separated at a certain ratio, the actual irradiation laser light included in the manufacturing laser light is used for manufacturing a semiconductor device, the laser irradiation target is positioned to receive the actual irradiation laser light, The semiconductor manufacturing apparatus includes: further comprising an auxiliary laser measurement member that receives the auxiliary measurement laser light and measures an auxiliary measurement laser power, which is the power of the auxiliary measurement laser light; Semiconductor manufacturing equipment.

2. 2. The semiconductor manufacturing apparatus according to claim 1, The laser measurement member is a light receiving unit that receives the measurement laser light and is made of ceramics; a temperature sensor having a resistance temperature detector and provided in a sensor arrangement area that does not receive the measurement laser light, The resistance temperature detector changes its resistance value in accordance with a change in temperature of the light receiving portion. Semiconductor manufacturing equipment.

3. 2. The semiconductor manufacturing apparatus according to claim 1, The laser measurement member is a laser measuring device having a measuring unit that receives the measurement laser light and directly measures the measurement laser power; a support jig that supports the laser measuring device from below, The support jig has a height adjustment function for adjusting the placement height of the measurement unit. Semiconductor manufacturing equipment.

4. 4. The semiconductor manufacturing apparatus according to claim 3, The laser measurement member is a metal cover member having an accommodation space for accommodating the laser measuring device and the supporting jig without interfering with reception of the measurement laser light by the measuring unit; Semiconductor manufacturing equipment.

5. A first laser oscillator that irradiates a first laser beam; a second laser oscillator for irradiating a second laser beam, the second laser beam being irradiated after a delay time has elapsed since the irradiation of the first laser beam, and the delay time being set to a length such that the first and second laser beams are not affected by each other; a splitter that receives the first and second laser beams, generates an intermediate laser beam by overlapping optical axes of the first and second laser beams, and splits the intermediate laser beam into a measurement laser beam and a manufacturing laser beam; a laser measuring member that receives the measurement laser light and measures a measurement laser power that is a power of the measurement laser light, the measurement laser beam and the manufacturing laser beam are separated at a certain ratio, the manufacturing laser beam is used in manufacturing a semiconductor device, and is irradiated onto an object to be irradiated with the laser beam; The laser measurement member is a laser measuring device having a measuring unit that receives the measurement laser light and directly measures the measurement laser power; a support jig that supports the laser measuring device from below, the support jig has a height adjustment function for adjusting the placement height of the measurement unit, The laser measurement member is a metal cover member having an accommodation space for accommodating the laser measuring device and the supporting jig without interfering with reception of the measurement laser light by the measuring unit, the measurement unit has a light receiving surface with a planar structure that receives the measurement laser light, The supporting jig is the laser measuring device is supported with a significant inclination between the irradiation direction of the measurement laser light and the normal direction of the light receiving surface so that the reflected light of the measurement laser light is contained within the accommodation space of the cover member. Semiconductor manufacturing equipment.

6. A method for manufacturing a semiconductor device using the semiconductor manufacturing apparatus according to any one of claims 1 to 5, the laser irradiation object includes a semiconductor wafer, (a) implanting impurity ions into the semiconductor wafer; (b) irradiating the semiconductor wafer with the manufacturing laser light using the semiconductor manufacturing equipment to activate the impurity ions implanted in the semiconductor wafer; (c) a step, which is executed in parallel with the step (b), of monitoring the measurement laser power measured by the laser measurement member using the semiconductor manufacturing apparatus. A method for manufacturing a semiconductor device.

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