Indication device

Abstract

To efficiently use a region in which an active layer is not formed.SOLUTION: A semiconductor device includes first and second conductive layers over an insulating surface, a first insulating layer over the first and second conductive layers, first and second oxide semiconductor layers over the first insulating layer, third and fourth conductive layers over the first oxide semiconductor layer, a second insulating layer over the third and fourth conductive layers, and a fifth conductive layer over the second insulating layer. In the semiconductor device, the third conductive layer is electrically connected to the second conductive layer; the fifth conductive layer is electrically connected to the fourth conductive layer; the first oxide semiconductor layer has a region overlapping with the first conductive layer; the second oxide semiconductor layer has a region overlapping with the fifth conductive layer; and the second oxide semiconductor layer has a region intersecting with the second conductive layer.SELECTED DRAWING: Figure 25

Description

[Technical Field]

[0001] The technical field relates to semiconductor devices. [Background technology]

[0002] Patent Documents 1 and 2 disclose a transistor having an active layer with an oxide semiconductor layer. A semiconductor device having the same is described.

[0003] The active layer is a semiconductor layer having at least a channel formation region.

[0004] The channel forming region is a region in which a channel can be formed.

[0005] In paragraph 0010 of Patent Document 1, it is stated that "H2O contained in the formed oxide semiconductor film Compounds containing hydrogen atoms, alkali metals, or alkaline earth metals Impurities such as compounds containing metalloids increase the carrier density of the oxide semiconductor film. It is listed.

[0006] In paragraph 0010 of Patent Document 2, it is stated that "hydrogen elements act as carriers (donors) in the oxide semiconductor layer. It states, "(This is the case when the [Prior art documents] [Patent documents]

[0007] [Patent Document 1] Japanese Patent Application Laid-Open No. 2012-072493 [Patent Document 2] Japanese Patent Application Laid-Open No. 2011-142311 Summary of the Invention [Problem to be solved by the invention]

[0008] The purpose is to effectively utilize the region where no active layer is formed. [Means for solving the problem]

[0009] It is preferable to form an electrode having a semiconductor layer in the region where the active layer is not formed.

[0010] The electrodes include, for example, electrodes of a capacitance element, electrodes of a display element, electrodes of a memory element, electrodes of a photoelectric conversion element, Electrodes and the like are included, but are not limited to these.

[0011] When the active layer has an oxide semiconductor layer, the oxide semiconductor layer is formed in the same process as the active layer having the oxide semiconductor layer. Forming an electrode having a nitride semiconductor layer is preferable because it reduces the number of steps.

[0012] Since the oxide semiconductor layer has a light-transmitting property, forming an electrode including the oxide semiconductor layer Therefore, it is possible to form a light-transmitting electrode, which is preferable.

[0013] Since the electrode having the oxide semiconductor layer has a high resistance, the surface of the electrode having the oxide semiconductor layer It is preferable to increase the product.

[0014] Since an electrode having an oxide semiconductor layer has a high resistance, it is preferable to provide an auxiliary wiring. .

[0015] Since the electrode having an oxide semiconductor layer has a high resistance, It is preferable to contain an alkali metal, an alkaline earth metal, hydrogen, or the like.

[0016] Alkali metals, alkaline earth metals, hydrogen, etc. become carriers in the oxide semiconductor layer. It is possible.

[0017] For example, a first conductive layer on an insulating surface, a second conductive layer on the insulating surface, A first insulating layer is provided on the first conductive layer and the second conductive layer, and a first oxide semiconductor layer, a second oxide semiconductor layer on the first insulating layer, A third conductive layer is formed on the first oxide semiconductor layer, and a fourth conductive layer is formed on the first oxide semiconductor layer. a second insulating layer on the third conductive layer and the fourth conductive layer; a fifth conductive layer on the second insulating layer, the third conductive layer being electrically connected to the second conductive layer; the fifth conductive layer is electrically connected to the fourth conductive layer, At least a part of the first conductive layer functions as a gate electrode of a transistor, At least a portion of the third conductive layer is connected to a source electrode or a drain electrode of the transistor. At least a portion of the fourth conductive layer is in front of the transistor. the first oxide semiconductor having a function as the other of the source electrode and the drain electrode; the second oxide semiconductor layer has a region overlapping with the first conductive layer, and the second oxide semiconductor layer has a region overlapping with the fifth conductive layer. The second oxide semiconductor layer has a region overlapping with the conductive layer, and the second oxide semiconductor layer intersects with the second conductive layer. It is possible to provide a semiconductor device having a region.

[0018] For example, a first conductive layer on an insulating surface, a second conductive layer on the insulating surface, A first insulating layer is provided on the first conductive layer and the second conductive layer, and a first oxide semiconductor layer, a second oxide semiconductor layer on the first insulating layer, A third conductive layer is formed on the first oxide semiconductor layer, and a fourth conductive layer is formed on the first oxide semiconductor layer. a sixth conductive layer on the second oxide semiconductor layer; a sixth conductive layer on the third conductive layer; a second insulating layer on the fourth conductive layer and on the sixth conductive layer, a fifth conductive layer on the third conductive layer, the fifth conductive layer being electrically connected to the second conductive layer; the fifth conductive layer is electrically connected to the fourth conductive layer and the first conductive layer is electrically connected to the At least a part of the conductive layer functions as a gate electrode of a transistor, and the third conductive layer At least a portion of the conductive layer serves as one of the source electrode or the drain electrode of the transistor. At least a part of the fourth conductive layer is connected to the source voltage of the transistor. the other of the electrode and the drain electrode, and at least a part of the sixth conductive layer The first oxide semiconductor layer has a function as an auxiliary wiring, and the first conductive layer overlaps the first oxide semiconductor layer. the second oxide semiconductor layer has a region overlapping with the fifth conductive layer, The second oxide semiconductor layer has a region that intersects with the second conductive layer. It is possible to provide a semiconductor device.

[0019] The first oxide semiconductor layer has a first alkali metal concentration, and the second oxide semiconductor layer has a The body layer has a second alkali metal concentration, the second alkali metal concentration being greater than or equal to the first alkali metal concentration. It is preferably higher than the alkali metal concentration.

[0020] The first oxide semiconductor layer has a first alkaline earth metal concentration, and the second oxide semiconductor layer has a The semiconductor layer has a second alkaline earth metal concentration, the second alkaline earth metal concentration being: It is preferably higher than the first alkaline earth metal concentration.

[0021] The first oxide semiconductor layer has a first hydrogen concentration, and the second oxide semiconductor layer has Preferably, the second hydrogen concentration is higher than the first hydrogen concentration. I wish.

[0022] At least a part of the fifth conductive layer functions as one electrode of a display element. At least a part of the fifth conductive layer functions as one electrode of a capacitor element, At least a part of the oxide semiconductor layer 2 functions as the other electrode of the display element. At least a part of the second oxide semiconductor layer functions as the other electrode of the capacitor element. It is preferable that the compound has the ability to [Effects of the Invention]

[0023] The region where no active layer is formed can be effectively utilized. [Brief explanation of the drawings]

[0024] [Figure 1] 1 is an example of a semiconductor device. [Figure 2] 1 is an example of a semiconductor device. [Figure 3] 1 is an example of a semiconductor device. [Figure 4] 1 is an example of a semiconductor device. [Figure 5] 1 is an example of a semiconductor device. [Figure 6] 1 is an example of a semiconductor device. [Figure 7] 1 is an example of a semiconductor device. [Figure 8] 1 is an example of a semiconductor device. [Figure 9] 1 is an example of a semiconductor device. [Figure 10] 1 is an example of a semiconductor device. [Figure 11] 1 is an example of a semiconductor device. [Figure 12] 1 is an example of a semiconductor device. [Figure 13] 1 is an example of a semiconductor device. [Figure 14] 1 is an example of a semiconductor device. [Figure 15] 1 is an example of a semiconductor device. [Figure 16] 1 is an example of a semiconductor device. [Figure 17] 1 is an example of a semiconductor device. [Figure 18] 1 is an example of a semiconductor device. [Figure 19] 1 is an example of a semiconductor device. [Figure 20] 1 is an example of a semiconductor device. [Figure 21] 1 is an example of a semiconductor device. [Figure 22] 1 is an example of a semiconductor device. [Figure 23] 1 is an example of a semiconductor device. [Figure 24] 1 is an example of a semiconductor device. [Figure 25] 1 is an example of a semiconductor device. [Figure 26] 1 is an example of a semiconductor device. [Figure 27] 1 is an example of a semiconductor device. [Figure 28] 1 is an example of a semiconductor device. [Figure 29] 1 is an example of a semiconductor device. [Figure 30] 1 is an example of a semiconductor device. [Figure 31] 1 is an example of a semiconductor device. [Figure 32] 1 is an example of a semiconductor device. DETAILED DESCRIPTION OF THE INVENTION

[0025] The embodiments will be described in detail with reference to the drawings.

[0026] However, various changes in form and details may be made without departing from the spirit of the invention. This is readily understood by those skilled in the art.

[0027] Therefore, the scope of the invention should not be interpreted as being limited to the description of the following embodiments. do not have.

[0028] In the configurations described below, parts that have the same parts, similar functions, or the same materials are referred to as The same symbols or the same hatching are used in common among different drawings, and the repeated explanations thereof will be omitted. Omitted.

[0029] The following embodiments can be implemented in part or in whole in combination as appropriate.

[0030] (Embodiment 1) An example of a semiconductor device will be described with reference to FIGS.

[0031] FIG. 2 is an example of a cross-sectional view taken along the line AB in FIG.

[0032] FIG. 3 is an example of a cross-sectional view of the CD cross section of FIG.

[0033] The first direction 8001 intersects with the second direction 8002 .

[0034] The substrate 101 has an insulating surface.

[0035] A conductive layer 201 is provided on the insulating surface.

[0036] A conductive layer 211 is provided on the insulating surface.

[0037] A conductive layer 212 is provided on the insulating surface.

[0038] A conductive layer 213 is provided on the insulating surface.

[0039] An insulating layer 300 is provided on the conductive layer 211 , the conductive layer 212 , and the conductive layer 213 .

[0040] The insulating layer 300 has a plurality of openings (contact holes).

[0041] An oxide semiconductor layer 301 is provided over an insulating layer 300 .

[0042] An oxide semiconductor layer 310 is provided on an insulating layer 300 .

[0043] A conductive layer 501 is provided over the oxide semiconductor layer 301 .

[0044] A conductive layer 502 is provided over the oxide semiconductor layer 301 .

[0045] A conductive layer 503 formed in the same process as the conductive layers 501 and 502 is included.

[0046] The conductive layer 501 is electrically connected to the conductive layer 211 through one of the openings in the insulating layer 300. is connected.

[0047] The conductive layer 501 is electrically connected to the conductive layer 212 through one of the openings in the insulating layer 300. is connected.

[0048] The conductive layer 503 is electrically connected to the conductive layer 212 through one of the openings in the insulating layer 300. is connected.

[0049] The conductive layer 503 is electrically connected to the conductive layer 213 through one of the openings in the insulating layer 300. is connected.

[0050] One end of the conductive layer 501 is electrically connected to the conductive layer 211 .

[0051] The other end of the conductive layer 501 is electrically connected to the conductive layer 212 .

[0052] One end of the conductive layer 503 is electrically connected to the conductive layer 212 .

[0053] The other end of the conductive layer 503 is electrically connected to the conductive layer 213 .

[0054] An insulating layer 500 is provided on a conductive layer 501 , a conductive layer 502 , and a conductive layer 503 .

[0055] The insulating layer 500 has a plurality of openings (contact holes).

[0056] A conductive layer 701 is provided on an insulating layer 500 .

[0057] The conductive layer 701 is electrically connected to the conductive layer 502 through one of the openings in the insulating layer 500. is connected.

[0058] A liquid crystal layer 800 is provided on a conductive layer 701 .

[0059] A conductive layer 900 is provided on a liquid crystal layer 800 .

[0060] The substrate 102 is disposed on the conductive layer 900 .

[0061] The conductive layer 900 is formed on the surface of the substrate 102 .

[0062] The liquid crystal layer 800 is sandwiched between the conductive layer 701 and the conductive layer 900 .

[0063] It is preferable to provide an alignment film between the conductive layer 701 and the liquid crystal layer 800 .

[0064] It is preferable to have an alignment film between the conductive layer 900 and the liquid crystal layer 800 .

[0065] The oxide semiconductor layer 301 has a region overlapping with the conductive layer 201 .

[0066] The oxide semiconductor layer 310 has a region overlapping with the conductive layer 201.

[0067] The oxide semiconductor layer 310 has a region overlapping with the conductive layer 211.

[0068] The oxide semiconductor layer 310 has a region overlapping with the conductive layer 212 .

[0069] The oxide semiconductor layer 310 has a region overlapping with the conductive layer 213 .

[0070] The oxide semiconductor layer 310 has a region where it intersects with the conductive layer 201 .

[0071] The oxide semiconductor layer 310 has a region where it intersects with the conductive layer 211 .

[0072] The oxide semiconductor layer 310 has a region that intersects with the conductive layer 212 .

[0073] The oxide semiconductor layer 310 has a region that intersects with the conductive layer 213 .

[0074] The oxide semiconductor layer 310 has a region overlapping with the conductive layer 701 .

[0075] The conductive layer 501 has an area overlapping with the conductive layer 201 .

[0076] The conductive layer 501 has an area where it intersects with the conductive layer 201 .

[0077] The conductive layer 201 is disposed so that the longitudinal direction is parallel to the first direction 8001 .

[0078] The conductive layer 211 is disposed so that the longitudinal direction is parallel to the second direction 8002 .

[0079] The conductive layer 212 is arranged so that the longitudinal direction is parallel to the second direction 8002 .

[0080] The conductive layer 213 is disposed so that the longitudinal direction is parallel to the second direction 8002 .

[0081] The conductive layer 501 is disposed so that the longitudinal direction is parallel to the second direction 8002 .

[0082] The conductive layer 502 is arranged so that the longitudinal direction is parallel to the first direction 8001 .

[0083] The conductive layer 503 is disposed so that the longitudinal direction is parallel to the second direction 8002 .

[0084] The first direction 8001 intersects with the second direction 8002 .

[0085] 1 to 3 show an example of a liquid crystal display device, which is one type of semiconductor device.

[0086] FIG. 4 shows an example of a pixel circuit of a liquid crystal display device.

[0087] The wiring L1 is electrically connected to the gate of the transistor Tr.

[0088] The wiring L2 is electrically connected to either the source or the drain of the transistor Tr. .

[0089] The other of the source and drain of the transistor Tr is electrically connected to one electrode of the liquid crystal element LC. is connected to.

[0090] The other of the source and drain of the transistor Tr is electrically connected to one electrode of the capacitance element C. is connected.

[0091] The wiring L3 is electrically connected to the other electrode of the liquid crystal element LC.

[0092] The wiring L4 is electrically connected to the other electrode of the capacitance element C.

[0093] The wiring L1, the wiring L2, the wiring L3, and the wiring L4 are used to transmit signals, voltages, or currents. It has the function of being able to do this.

[0094] The wiring L1, the wiring L2, the wiring L3, and the wiring L4 have a function of being able to be at a predetermined potential. It has.

[0095] By changing or fixing the electrical state (signal, voltage, current, or potential) of the wiring L1, This makes it possible to control the on / off of the transistor Tr.

[0096] The wiring L1 is called a gate wiring, a scanning line, or the like.

[0097] By changing or fixing the electrical state (signal, voltage, current, or potential) of the wiring L2, This makes it possible to control the driving of the liquid crystal element LC.

[0098] By changing or fixing the electrical state (signal, voltage, current, or potential) of the wiring L2, As a result, charge can be stored in the capacitance element C.

[0099] The wiring L2 is called a source wiring, a drain wiring, a signal line, or the like.

[0100] By changing or fixing the electrical state (signal, voltage, current, or potential) of the wiring L3, This makes it possible to control the driving of the liquid crystal element LC.

[0101] The wiring L3 is called a common wiring, a common electrode, or the like.

[0102] By changing or fixing the electrical state (signal, voltage, current, or potential) of the wiring L4, As a result, charge can be stored in the capacitance element C.

[0103] The wiring L4 is called a capacitance wiring or the like.

[0104] The wiring L3 and the wiring L4 may be electrically connected.

[0105] The relationship between FIG. 1 to FIG. 3 and FIG. 4 will be explained below.

[0106] At least a part of the conductive layer 201 functions as a gate electrode of the transistor Tr. can be done.

[0107] At least a part of the conductive layer 201 can function as the wiring L1.

[0108] At least a part of the conductive layer 211 can function as the wiring L2.

[0109] At least a portion of the conductive layer 212 can function as the wiring L2.

[0110] At least a part of the conductive layer 213 can function as the wiring L2.

[0111] The conductive layer 201, the conductive layer 211, the conductive layer 212, and the conductive layer 213 are formed in the same process. It is preferable that:

[0112] That is, the conductive layer 201, the conductive layer 211, the conductive layer 212, and the conductive layer 213 have the same material. It is preferable to do so.

[0113] At least a part of the insulating layer 300 functions as a gate insulating film of the transistor Tr. This can be done.

[0114] At least a part of the oxide semiconductor layer 301 functions as an active layer of the transistor Tr. It is possible.

[0115] That is, the oxide semiconductor layer 301 has at least a channel formation region.

[0116] At least a part of the oxide semiconductor layer 310 functions as the other electrode of the capacitor C. This can be done.

[0117] At least a part of the oxide semiconductor layer 310 can function as the wiring L4.

[0118] The oxide semiconductor layer 301 and the oxide semiconductor layer 310 are preferably formed in the same step. .

[0119] That is, it is preferable that the oxide semiconductor layer 301 and the oxide semiconductor layer 310 are made of the same material. It's nice.

[0120] At least a part of the conductive layer 501 is a source electrode or a drain electrode of the transistor Tr. It can function as one of the two.

[0121] At least a part of the conductive layer 501 can function as the wiring L2.

[0122] At least a part of the conductive layer 502 is a source electrode or a drain electrode of the transistor Tr. It can function as the other.

[0123] At least a part of the conductive layer 503 can function as the wiring L2.

[0124] At least a part of the conductive layer 503 is connected to the source of the transistor of the pixel adjacent to the transistor Tr. The electrode can function as either a source electrode or a drain electrode.

[0125] The conductive layers 501, 502, and 503 are preferably formed in the same step.

[0126] That is, it is preferable that the conductive layers 501, 502, and 503 have the same material. stomach.

[0127] At least a portion of the insulating layer 500 can function as an interlayer insulating film.

[0128] At least a part of the insulating layer 500 can function as a dielectric film of the capacitance element C. .

[0129] At least a part of the conductive layer 701 can function as one electrode of the liquid crystal element LC. Cut.

[0130] At least a part of the conductive layer 701 can function as one electrode of the capacitor C. By increasing the area of ​​the conductive layer 701, the capacitance value of the capacitor C can be increased. For example, the conductive layer 701 may be enlarged to the extent that it overlaps with the conductive layer 212. In the first direction 8001, the end of the conductive layer 701 is overlapped with the conductive layer 212. In addition, when a conductive layer 526 and a conductive layer 527 are provided as shown in FIG. The conductive layer 701 may be provided so as to overlap with the conductive layers 526 and 527 .

[0131] At least a part of the liquid crystal layer 800 can function as a liquid crystal layer of the liquid crystal element LC. .

[0132] At least a part of the conductive layer 900 can function as the other electrode of the liquid crystal element LC. Cut.

[0133] At least a portion of the conductive layer 900 can function as the wiring L3.

[0134] By using the conductive layer 211, the conductive layer 212, the conductive layer 213, etc. as a part of the wiring L2, Therefore, a part of the wiring L2 (the conductive layer 211, the conductive layer 212, the conductive layer 213, etc.) and the wiring L4 ( The oxide semiconductor layer 310 may overlap with a portion of the oxide semiconductor layer 310.

[0135] A part of the wiring L2 (the conductive layer 211, the conductive layer 212, the conductive layer 213, etc.) and the wiring L4 (oxide By overlapping a part of the wiring L4 (oxide semiconductor layer 310), It can be overlapped with one electrode (pixel electrode) of the liquid crystal element LC of every pixel.

[0136] That is, the line L4 can be used as a common line for all pixels.

[0137] The wiring common to all pixels has a function that can supply a predetermined electrical state to all pixels. Possess the ability.

[0138] The oxide semiconductor layer 310 can be said to have a lattice shape.

[0139] The oxide semiconductor layer 310 has a plurality of openings, and the transistors of the respective pixels are arranged in the plurality of openings. It can be said that a transistor is arranged.

[0140] The oxide semiconductor layer 310 includes a plurality of first regions extending along a first direction 8001 and a plurality of It can be said that the hologram has a plurality of second regions connecting a number of first regions.

[0141] The oxide semiconductor layer 310 has a plurality of first regions extending along the second direction 8002 and a plurality of It can be said that the hologram has a plurality of second regions connecting a number of first regions.

[0142] As described above, as part of the wiring L2, the wiring in the same layer as the gate electrode of the transistor is used. This allows a part of the wiring L2 to overlap a part of the wiring L4.

[0143] Since a part of the wiring L2 and a part of the wiring L4 can be overlapped, a part of the wiring L2 and a part of the wiring L4 can be overlapped. It can intersect with part of L4.

[0144] By crossing a part of the wiring L2 and a part of the wiring L4, the wiring L4 is connected to all pixels. The wiring can be common to both.

[0145] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0146] (Embodiment 2) FFS (Fringe Field Switching) driven liquid crystal display (semiconductor This paper describes an example of a human body (a type of bodily device).

[0147] 5 and 6 show the structure of one electrode (pixel electrode (for example, This is an example in which an opening is provided in the conductive layer 701).

[0148] 5 and 6, at least a part of the oxide semiconductor layer 310 is connected to the other side of the liquid crystal element LC. The electrode can function as an electrode.

[0149] At least a part of the oxide semiconductor layer 310 functions as the other electrode of the liquid crystal element LC. Therefore, the conductive layer 900 is not required.

[0150] In FIGS. 5 and 6, a conductive layer 900 may be provided.

[0151] 5 and 6, when the conductive layer 900 is provided, the conductive layer 900 is It can be used for purposes other than electrodes.

[0152] The other uses of the electrode other than that of the liquid crystal element LC include, for example, use as an electric field shielding film, Examples of applications include, but are not limited to, electrodes for touch panels.

[0153] The electric field shielding film has the function of preventing the liquid crystal element from being affected by an external electric field. Possess the ability.

[0154] FIG. 7 shows an example of a pixel circuit of a liquid crystal display device corresponding to FIGS.

[0155] The wiring L1 is electrically connected to the gate of the transistor Tr.

[0156] The wiring L2 is electrically connected to either the source or the drain of the transistor Tr. .

[0157] The other of the source and drain of the transistor Tr is electrically connected to one electrode of the liquid crystal element LC. is connected to.

[0158] The other of the source and drain of the transistor Tr is electrically connected to one electrode of the capacitance element C. is connected.

[0159] The wiring L3 is electrically connected to the other electrode of the liquid crystal element LC.

[0160] The wiring L3 is electrically connected to the other electrode of the capacitance element C.

[0161] The wiring L1, the wiring L2, and the wiring L3 have a function of transmitting a signal, a voltage, or a current. It has.

[0162] The wiring L1, the wiring L2, and the wiring L3 have a function of being able to become at a predetermined potential.

[0163] By changing or fixing the electrical state (signal, voltage, current, or potential) of the wiring L1, This makes it possible to control the on / off of the transistor Tr.

[0164] The wiring L1 is called a gate wiring, a scanning line, or the like.

[0165] By changing or fixing the electrical state (signal, voltage, current, or potential) of the wiring L2, This makes it possible to control the driving of the liquid crystal element LC.

[0166] By changing or fixing the electrical state (signal, voltage, current, or potential) of the wiring L2, As a result, charge can be stored in the capacitance element C.

[0167] The wiring L2 is called a source wiring, a drain wiring, a signal line, or the like.

[0168] By changing or fixing the electrical state (signal, voltage, current, or potential) of the wiring L3, This makes it possible to control the driving of the liquid crystal element LC.

[0169] By changing or fixing the electrical state (signal, voltage, current, or potential) of the wiring L3, As a result, charge can be stored in the capacitance element C.

[0170] The wiring L3 is called a common wiring, a common electrode, or the like.

[0171] The wiring L3 has a first function as a capacitance wiring or the like, and a second function as a common wiring, a common electrode or the like. It can be said that this wiring has the functions of 2.

[0172] With the above-described configuration, it is possible to provide a liquid crystal display device that operates in the FFS mode.

[0173] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0174] (Embodiment 3) The oxide semiconductor layer 310 may have a high resistance value.

[0175] Therefore, it is preferable to provide a conductive layer that can function as an auxiliary wiring.

[0176] For example, FIG. 8 shows an example in which conductive layers 521 and 522 are added to the components shown in FIGS. 1 to 4. .

[0177] For example, FIG. 9 shows an example in which conductive layers 523 and 524 are added to the components shown in FIGS. 1 to 4. .

[0178] For example, FIG. 10 shows an example in which a conductive layer 525 and the like are added to the components of FIGS.

[0179] For example, FIG. 11 shows the conductive layer 526, the conductive layer 527, the conductive layer 528, and the conductive layer 529 in FIGS. This is an example in which an electrical layer 529 and the like are added.

[0180] 8 to 11, the conductive layer 203 is a conductive layer formed in the same process as the conductive layer 201. be.

[0181] That is, the conductive layer 203 has the same material as the conductive layer 201 .

[0182] 8 to 11, the conductive layer 214 is a conductive layer formed in the same process as the conductive layer 201. be.

[0183] That is, conductive layer 214 has the same material as conductive layer 201 .

[0184] 1 to 4, the conductive layers (conductive layers 521 to 524) that can function as auxiliary wiring 5 to 7, conductive layers that can function as auxiliary wiring are shown. Alternatively, layers (conductive layers 521 to 529, etc.) may be provided.

[0185] The conductive layers (conductive layers 521 to 529, etc.) that can function as auxiliary wiring are The conductive layer 501 can be formed in the same process.

[0186] That is, the conductive layers (conductive layers 521 to 529, etc.) that can function as auxiliary wiring The conductive layer 501 can be formed using the same material as the conductive layer 501 .

[0187] The conductive layers (conductive layers 521 to 529, etc.) that can function as auxiliary wirings are The insulating layer 310 has a region in contact with the nitride semiconductor layer 310 .

[0188] For example, in FIG. 8, the conductive layer 521 and the conductive layer 522 are arranged along the first direction 8001. are provided continuously.

[0189] For example, in FIG. 9, the conductive layer 523 and the conductive layer 524 are arranged along the second direction 8002. are provided continuously.

[0190] For example, in FIG. 10, the conductive layer 525 is continuously provided along the first direction 8001. The conductive layer 525 is provided continuously along the second direction 8002. do.

[0191] In FIG. 10, it can be said that a grid-shaped conductive layer 525 is provided.

[0192] In FIG. 10, a conductive layer 525 having a plurality of openings can be seen.

[0193] In FIG. 10, a plurality of pixels (transistors) are formed inside a plurality of openings in the conductive layer 525. It can be said that the pixel electrodes (transistors, pixel electrodes, etc.) are provided.

[0194] For example, in FIG. 11, the conductive layer 528 and the conductive layer 529 are arranged along the first direction 8001. etc. are provided intermittently.

[0195] For example, in FIG. 11, the conductive layer 526 and the conductive layer 527 are arranged along the second direction 8002. etc. are provided intermittently.

[0196] For example, in the case of the circuit of FIG. 4, a conductive layer (conductive layer 52) that can function as an auxiliary wiring At least a part of the conductive layers (1 to 529, etc.) can function as wiring L4.

[0197] For example, in the case of the circuit of FIG. 7, a conductive layer (conductive layer 52) that can function as an auxiliary wiring At least a part of the conductive layers (1 to 529, etc.) can function as wiring L3.

[0198] That is, the conductive layers (conductive layers 521 to 529, etc.) that can function as auxiliary wiring By having this, the resistance value of the wiring L3 or the wiring L4 can be reduced.

[0199] The conductive layer 521 has an area overlapping with the conductive layer 211 .

[0200] The conductive layer 521 has an area where it intersects with the conductive layer 211 .

[0201] The conductive layer 522 has an area that overlaps with the conductive layer 212 .

[0202] Conductive layer 522 has an area where it intersects with conductive layer 212 .

[0203] The conductive layer 522 has an area that overlaps with the conductive layer 214 .

[0204] Conductive layer 522 has an area where it intersects with conductive layer 214 .

[0205] The conductive layer 523 has a region overlapping with the conductive layer 201 .

[0206] The conductive layer 523 has an area where it intersects with the conductive layer 201 .

[0207] The conductive layer 523 has a region overlapping with the conductive layer 203 .

[0208] The conductive layer 523 has an area where it intersects with the conductive layer 203 .

[0209] The conductive layer 524 has an area overlapping with the conductive layer 201 .

[0210] The conductive layer 524 has an area where it intersects with the conductive layer 201 .

[0211] The conductive layer 524 has a region overlapping with the conductive layer 203 .

[0212] The conductive layer 524 has an area where it intersects with the conductive layer 203 .

[0213] The conductive layer 525 has an area overlapping with the conductive layer 201 .

[0214] The conductive layer 525 has an area where it intersects with the conductive layer 201 .

[0215] The conductive layer 525 has an overlapping region with the conductive layer 203 .

[0216] Conductive layer 525 has an area where it intersects with conductive layer 203 .

[0217] The conductive layer 525 has an area overlapping with the conductive layer 211 .

[0218] The conductive layer 525 has an area where it intersects with the conductive layer 211 .

[0219] The conductive layer 525 has an area that overlaps with the conductive layer 212 .

[0220] Conductive layer 525 has an area where it intersects with conductive layer 212 .

[0221] The conductive layer 525 has an area that overlaps with the conductive layer 214 .

[0222] Conductive layer 525 has an area where it intersects with conductive layer 214 .

[0223] The conductive layer 526 has an area that overlaps with the conductive layer 212 .

[0224] Conductive layer 526 has an area where it intersects with conductive layer 212 .

[0225] The conductive layer 527 has an area overlapping with the conductive layer 214 .

[0226] Conductive layer 527 has an area where it intersects with conductive layer 214 .

[0227] The conductive layer 528 has an overlapping region with the conductive layer 201 .

[0228] The conductive layer 528 has an area where it intersects with the conductive layer 201 .

[0229] The conductive layer 529 has a region overlapping with the conductive layer 203 .

[0230] Conductive layer 529 has an area where it intersects with conductive layer 203 .

[0231] As described above, the conductive layer that can function as an auxiliary wiring is formed on the gate electrode of the transistor. By intersecting with the conductive layer formed in the same process as the electrode, it functions as an auxiliary wiring. The conductive layer can be provided across a plurality of pixels.

[0232] The provision of a conductive layer that can function as an auxiliary wiring, as shown in FIG. 11, is This is preferable from the viewpoint of increasing the aperture ratio of the pixel.

[0233] For example, conductive layer 526 has a first region that overlaps conductive layer 212 and a second region that does not overlap conductive layer 212. and a third region that does not overlap with conductive layer 212.

[0234] For example, the conductive layer 527 has a first region that overlaps the conductive layer 214 and a second region that does not overlap the conductive layer 214. and a third region that does not overlap with conductive layer 214.

[0235] For example, the conductive layer 528 has a first region that overlaps the conductive layer 201 and a second region that does not overlap the conductive layer 201. and a third region that does not overlap with the conductive layer 201.

[0236] For example, the conductive layer 529 has a first region that overlaps the conductive layer 203 and a second region that does not overlap the conductive layer 203. and a third region that does not overlap with the conductive layer 203.

[0237] Either the second region or the third region is disposed in one of two adjacent pixels, and the second The other of the first and second regions is disposed in the other of the two adjacent pixels.

[0238] The first region is disposed between the second region and the third region.

[0239] From the viewpoint of increasing the aperture ratio of the pixel, the areas of the second and third regions are Smaller is preferable.

[0240] For example, if the area of ​​the second region is made smaller than the area of ​​the first region, the aperture ratio of the pixel can be increased. This is preferable because it allows for a longer hearing.

[0241] For example, if the area of ​​the third region is made smaller than the area of ​​the first region, the aperture ratio of the pixel can be increased. This is preferable because it allows for a longer hearing.

[0242] For example, the sum of the areas of the second and third regions is made smaller than the area of ​​the first region. This is preferable because it allows the aperture ratio of the pixel to be significantly increased.

[0243] For example, either the area of ​​the second region or the area of ​​the third region may be set to zero.

[0244] For example, both the area of ​​the second region and the area of ​​the third region may be set to zero.

[0245] If the area of ​​the second region and the area of ​​the third region are both set to 0, they function as auxiliary wiring. The entire conductive layer overlaps the underlying conductive layer.

[0246] When the entire conductive layer that can function as an auxiliary wiring is overlapped with the lower conductive layer, the pixel opening This is preferable because it allows the highest possible rate of penetration.

[0247] For example, the entire conductive layer 526 may overlap the conductive layer 212 .

[0248] For example, the entire conductive layer 527 may overlap the conductive layer 214 .

[0249] For example, the entire conductive layer 528 may overlap the conductive layer 201 .

[0250] For example, the entire conductive layer 529 may overlap the conductive layer 203 .

[0251] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0252] (Fourth embodiment) In the other embodiments, the oxide semiconductor layer 310 is provided across all the pixels. .

[0253] For example, as shown in FIG. 12, the oxide semiconductor layer 310 is arranged along a first direction 8001. The light source 10 may be provided so as to extend over a plurality of pixels.

[0254] For example, as shown in FIG. 13, the oxide semiconductor layer 310 is arranged along the second direction 8002. The light source 10 may be provided so as to extend over a plurality of pixels.

[0255] A plurality of pixels aligned along the first direction 8001 is referred to as a "row."

[0256] A plurality of pixels aligned along the second direction 8002 is referred to as a "column."

[0257] In FIG. 12, an oxide semiconductor layer is provided for each row.

[0258] In FIG. 13, an oxide semiconductor layer is provided for each column.

[0259] In FIG. 12, a conductive layer (conductive layer 201, etc.) corresponding to the wiring L1 and a wiring L3 or a wiring It is preferable to overlap with an oxide semiconductor layer (such as the oxide semiconductor layer 310) corresponding to L4.

[0260] In FIG. 12, the oxide semiconductor layer (oxide semiconductor layer 3) corresponding to the wiring L3 or the wiring L4 In some areas (e.g., 10), the length in the second direction 8002 can be increased. Therefore, the resistance value of the wiring L3 or the wiring L4 can be reduced.

[0261] A part of the oxide semiconductor layer (such as the oxide semiconductor layer 310) corresponding to the wiring L3 or the wiring L4 The region is, for example, the region surrounded by the dotted line in FIG.

[0262] In FIG. 12, the oxide semiconductor layer corresponding to the wiring L3 or the wiring L4 is formed by Although it is designed to overlap both of the wirings L1, it overlaps only one of the two adjacent wirings L1. is also good.

[0263] The oxide semiconductor layer corresponding to the wiring L3 or the wiring L4 is connected to one of the two adjacent wirings L1. Even if only one of the wirings L3 and L4 is overlapped, the resistance value of the wiring L3 or L4 can be reduced.

[0264] In FIG. 13, a conductive layer (conductive layer 212, etc.) corresponding to the wiring L2 and a wiring L3 or a wiring It is preferable to overlap with an oxide semiconductor layer (such as the oxide semiconductor layer 310) corresponding to L4.

[0265] In FIG. 13, the oxide semiconductor layer (oxide semiconductor layer 3) corresponding to the wiring L3 or the wiring L4 10, etc.), the length in the first direction 8001 can be increased. Therefore, the resistance value of the wiring L3 or the wiring L4 can be reduced.

[0266] A part of the oxide semiconductor layer (such as the oxide semiconductor layer 310) corresponding to the wiring L3 or the wiring L4 The region is, for example, the region surrounded by the dotted line in FIG.

[0267] In FIG. 13, the oxide semiconductor layer corresponding to the wiring L3 or the wiring L4 is formed by dividing the oxide semiconductor layer into two adjacent layers. Although it is designed to overlap both of the wirings L2, it overlaps only one of the two adjacent wirings L2. is also good.

[0268] The oxide semiconductor layer corresponding to the wiring L3 or the wiring L4 is connected to one of the two adjacent wirings L2. Even if only one of the wirings L3 and L4 is overlapped, the resistance value of the wiring L3 or L4 can be reduced.

[0269] 12 and 13, a conductive layer (conductive layer 521) that can function as an auxiliary wiring A conductive layer 529 or the like may be provided.

[0270] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0271] (Embodiment 5) Resistance value of the oxide semiconductor layer (oxide semiconductor layer 310, etc.) corresponding to the wiring L3 or the wiring L4 In order to reduce the temperature, an alkali metal or an aluminum is added to the oxide semiconductor layer corresponding to the wiring L3 or the wiring L4. It is preferable to include potassium earth metals, hydrogen, etc.

[0272] For example, an oxide semiconductor layer corresponding to the wiring L3 or the wiring L4 may be selectively doped with an alkali metal. It is preferable to add a substance containing an alkaline earth metal, a substance containing hydrogen, or the like. It's nice.

[0273] The oxide semiconductor layer that becomes the active layer of the transistor Tr is doped with alkali metals, alkaline earth metals, If hydrogen or the like is contained, it adversely affects the electrical characteristics of the transistor Tr.

[0274] Substances containing alkali metals, substances containing alkaline earth metals, substances containing hydrogen It is necessary to avoid adding these substances to the oxide semiconductor layer that is the active layer of the transistor Tr as much as possible. It is preferable that:

[0275] Alkali metals and alkaline earth metals are removed from the oxide semiconductor layer that forms the active layer of the transistor Tr. It is preferable to thoroughly eliminate metals, hydrogen, etc.

[0276] For example, the oxide semiconductor layer that will be the active layer of the transistor Tr is covered with a mask. By the on-doping method, ion implantation method, etc., substances containing alkali metals, alkaline earth metals Metal-containing substances, hydrogen-containing substances, etc. can be added.

[0277] When a substance containing an alkali metal is added, the oxide corresponding to the wiring L3 or the wiring L4 is The alkali metal concentration in the oxide semiconductor layer is The alkali metal concentration is higher than that of the

[0278] When a substance containing an alkaline earth metal is added, the wiring L3 or the wiring L4 is The alkaline earth metal concentration in the oxide semiconductor layer is determined by the oxide semiconductor layer that becomes the active layer of the transistor Tr. The concentration of the alkaline earth metal in the conductor layer is higher than that in the alkaline earth metal in the conductor layer.

[0279] When a substance containing hydrogen is added, the oxide semiconductor corresponding to the wiring L3 or the wiring L4 The hydrogen concentration in the layer is higher than the hydrogen concentration in the oxide semiconductor layer that is the active layer of the transistor Tr. It will become more expensive.

[0280] Two or more types of substances containing alkali metals may be added.

[0281] Two or more types of substances containing alkaline earth metals may be added.

[0282] Two or more types of hydrogen-containing substances may be added.

[0283] One or more "substances containing alkali metals" and one or more "substances containing alkaline earth metals" A substance having the above property may be added.

[0284] One or more types of "substances containing alkali metals" and one or more types of "substances containing hydrogen" and may be added.

[0285] One or more "substances containing alkaline earth metals" and one or more "substances containing hydrogen" "Quality" may be added.

[0286] One or more "substances containing alkali metals" and one or more "substances containing alkaline earth metals" It is also possible to add a "substance having hydrogen" and one or more "substances containing hydrogen."

[0287] Substances containing alkali metals include alkali metals and alkali metal compounds.

[0288] Examples of alkali metals include Li (lithium), Na (sodium), and K (potassium). Examples include Rb (rubidium), Cs (cesium), and Fr (francium).

[0289] The alkali metal compounds include, for example, oxides of alkali metals, nitrides of alkali metals, and Examples include potassium metal fluorides and alkali metal chlorides.

[0290] Substances containing alkaline earth metals include alkaline earth metals and alkaline earth metal compounds. be.

[0291] Examples of alkaline earth metals include Be (beryllium), Mg (magnesium), and C. a (calcium), Sr (strontium), Ba (barium), Ra (radium), etc. be.

[0292] The alkaline earth metal compounds include, for example, oxides of alkaline earth metals, Nitrides, fluorides of alkaline earth metals, chlorides of alkaline earth metals, etc.

[0293] Substances containing hydrogen include, for example, H (hydrogen), H2O (water), SiH4 (silane), ), PH3 (phosphine), B2H6 (diborane), etc.

[0294] The alkali metal concentration, alkaline earth metal concentration, hydrogen concentration, etc. can be measured using, for example, SIMS (secondary ion It can be measured by mass spectrometry, Rutherford backscattering spectroscopy (RBS), etc. The concentration analysis method is not limited to these.

[0295] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0296] (Sixth embodiment) 14 to 18 show the oxide semiconductor layer 310 containing alkali metals, alkaline earth metals, hydrogen, etc. This is an example of a structure for incorporating

[0297] FIG. 14 shows an example in which openings are provided in the insulating layer 300 or the insulating layer 500 in FIG.

[0298] The area enclosed by the dashed line in FIG. 14 corresponds to the opening.

[0299] In FIG. 14, the oxide semiconductor layer 310 has a region that overlaps with the opening.

[0300] In FIG. 14, the conductive layer 701 has a region that overlaps with the opening.

[0301] FIG. 15 is an example of a cross-sectional view taken along the line AB in FIG.

[0302] FIG. 15 shows an example in which an opening is provided in the insulating layer 300. In FIG.

[0303] FIG. 16 is an example of a cross-sectional view taken along the line AB in FIG.

[0304] FIG. 16 shows an example in which an opening is provided in the insulating layer 300. In FIG.

[0305] In FIG. 16, an insulating layer 150 is provided between a substrate 101 and a conductive layer 201 .

[0306] In FIG. 16, at least a part of the insulating layer 150 can function as a base film. do.

[0307] FIG. 17 is an example of a cross-sectional view taken along the line AB in FIG.

[0308] FIG. 17 shows an example in which an opening is provided in the insulating layer 300. In FIG.

[0309] In FIG. 17, an insulating layer 150 is provided between a conductive layer 201 and an insulating layer 300 .

[0310] In FIG. 17, at least a part of the insulating layer 150 is used as a gate insulating film of a transistor. It can function as such.

[0311] FIG. 18 is an example of a cross-sectional view taken along the line AB in FIG.

[0312] FIG. 18 shows an example in which an opening is provided in the insulating layer 500. In FIG.

[0313] In FIG. 18, an insulating layer 150 is provided between an insulating layer 500 and a conductive layer 701 .

[0314] In FIG. 18, at least a part of the insulating layer 150 can function as an interlayer insulating film. can.

[0315] In FIG. 15, the substrate 101 is, for example, a glass substrate containing Na (sodium). .

[0316] It is known that inexpensive glass substrates contain large amounts of Na (sodium).

[0317] In FIG. 15, the oxide semiconductor layer 310 has a region in contact with the substrate 101.

[0318] When the oxide semiconductor layer 310 is in contact with the substrate 101, Na (NaO) is released from the substrate 101. The ions (sodium) diffuse into the oxide semiconductor layer 310.

[0319] When Na (sodium) is diffused from the substrate 101 into the oxide semiconductor layer 310, Since carriers are generated in the oxide semiconductor layer 310, the resistance of the oxide semiconductor layer 310 is reduced. It is possible.

[0320] N near the interface between the oxide semiconductor layer 310 and the substrate 101 (under the oxide semiconductor layer 310) The concentration of a (sodium) becomes particularly high.

[0321] That is, the sodium concentration in a predetermined region of the oxide semiconductor layer 310 is The sodium concentration in a given area of ​​1 becomes higher than that of

[0322] 16 to 18, the insulating layer 150 is made of a material containing an alkali metal, an alkaline earth metal, or the like. It contains a substance containing metalloid or a substance containing hydrogen.

[0323] The insulating layer 150 may contain two or more types of substances containing alkali metals.

[0324] The insulating layer 150 may contain two or more types of substances containing alkaline earth metals.

[0325] The insulating layer 150 may contain two or more types of hydrogen-containing substances.

[0326] The insulating layer 150 is made of one or more "substances containing alkali metals" and one or more "alkaline metals." It may also contain a potassium earth metal-containing substance.

[0327] The insulating layer 150 is made of one or more "substances containing alkali metals" and one or more "hydrogen The material may contain "a substance containing the above".

[0328] The insulating layer 150 is made of one or more "alkaline earth metal-containing substances" and one or more " The hydrogen-containing substance may also be contained.

[0329] The insulating layer 150 is made of one or more "substances containing alkali metals" and one or more "alkaline metals." It contains a "potassium earth metal-containing substance" and one or more "hydrogen-containing substances" is also good.

[0330] For example, when forming a film using plasma CVD, the deposition gas contains alkali metals. containing a substance having an alkali metal, an alkaline earth metal, or a hydrogen-containing substance. The insulating layer 150 can be formed by this.

[0331] For example, when forming a film using a sputtering method, In the sputtering gas, there is a substance containing an alkali metal, a substance containing an alkaline earth metal, The insulating layer 150 may be formed by including a material or a material containing hydrogen. can.

[0332] For example, since a resin film contains a large amount of H2O, the insulating layer 150 can be made of a resin film. can.

[0333] The resin film contains a substance containing an alkali metal or a substance containing an alkaline earth metal. and is highly effective.

[0334] 16 to 18, the oxide semiconductor layer 310 has a region in contact with the insulating layer 150. do.

[0335] The oxide semiconductor layer 310 comes into contact with the insulating layer 150, and thus the aluminum Potassium metal-containing substances, alkaline earth metal-containing substances, or hydrogen-containing substances The oxide semiconductor layer 310 is diffused.

[0336] From the insulating layer 150, a substance containing an alkali metal, a substance containing an alkaline earth metal, Alternatively, a substance containing hydrogen may be diffused into the oxide semiconductor layer 310, thereby forming a hydrogen-containing oxide semiconductor layer. Since carriers are generated in the oxide semiconductor layer 310, the resistance of the oxide semiconductor layer 310 can be reduced. .

[0337] The vicinity of the interface between the oxide semiconductor layer 310 and the insulating layer 150 (the lower layer of the oxide semiconductor layer 310 or The alkali metal concentration, alkaline earth metal concentration, or hydrogen concentration in the upper layer becomes particularly high.

[0338] That is, the alkali metal concentration in a predetermined region of the oxide semiconductor layer 310 is The alkali metal concentration in the given region of 01 is higher than that of 01.

[0339] Alternatively, the concentration of the alkaline earth metal in a predetermined region of the oxide semiconductor layer 310 is The alkaline earth metal concentration in the predetermined region of the layer 301 is higher than that in the predetermined region of the layer 301.

[0340] Alternatively, the hydrogen concentration in a predetermined region of the oxide semiconductor layer 310 is The hydrogen concentration in the predetermined region is higher.

[0341] 15 to 18, the insulating layer 300 and the insulating layer 500 are oxide semiconductor layers. 301.

[0342] The oxide semiconductor layer 301 is the active layer of the transistor Tr, and therefore contains an alkali metal. Prevents the intrusion of substances containing alkaline earth metals, substances containing hydrogen, etc. It is preferable.

[0343] That is, the alkali metal concentration and alkaline earth metal concentration in the insulating layer 300 and the insulating layer 500 , and the hydrogen concentration is preferably low.

[0344] For example, the sodium concentration in the insulating layer 300 is lower than the sodium concentration in the substrate 101. It is preferable that

[0345] For example, the sodium concentration in the insulating layer 500 is lower than the sodium concentration in the substrate 101. It is preferable that

[0346] For example, the concentration of alkali metal in the insulating layer 300 is higher than the concentration of alkali metal in the insulating layer 150. It is preferable that the temperature is lower than that.

[0347] For example, the concentration of alkali metal in the insulating layer 500 is higher than the concentration of alkali metal in the insulating layer 150. It is preferable that the temperature is lower than that.

[0348] For example, the alkaline earth metal concentration in insulating layer 300 is higher than that in insulating layer 150. It is preferable that the concentration is lower than the metal concentration.

[0349] For example, the alkaline earth metal concentration in insulating layer 500 is higher than that in insulating layer 150. It is preferable that the concentration is lower than the metal concentration.

[0350] For example, the hydrogen concentration in the insulating layer 300 is preferably lower than the hydrogen concentration in the insulating layer 150. I wish.

[0351] For example, the hydrogen concentration in the insulating layer 500 may be lower than the hydrogen concentration in the insulating layer 150. preferable.

[0352] In order to reduce oxygen vacancies in the oxide semiconductor layer 301, the insulating layer 300 or the insulating layer 50 It is preferred that 0 contains oxygen.

[0353] For example, the oxygen concentration in the insulating layer 300 is preferably higher than the oxygen concentration in the insulating layer 150. I wish.

[0354] For example, the oxygen concentration in the insulating layer 500 is preferably higher than the oxygen concentration in the insulating layer 150. I wish.

[0355] The configuration of FIG. 18 may be combined with any of the configurations of FIGS.

[0356] For example, by using a structure in which the oxide semiconductor layer 310 is sandwiched between a pair of insulating layers 150 on the top and bottom, As a result, the resistance value of the oxide semiconductor layer 310 can be significantly reduced.

[0357] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0358] (Embodiment 7) 15 and 16, the opening of the insulating layer 300 is formed by the conductive layer 201 and the conductive layer 21. 1. If the conductive layer 212, the conductive layer 213, etc. are overlapped, the conductive layers will short-circuit each other.

[0359] On the other hand, in the case of FIG. 17, the opening of the insulating layer 300 is formed by the conductive layer 201, the conductive layer 211, Even if the conductive layers 212, 213, etc. are overlapped, the conductive layers do not short-circuit with each other.

[0360] In the case of FIG. 18, the opening of the insulating layer 500 is formed by the conductive layer 201, the conductive layer 211, and the conductive layer Even if the conductive layer 212 and the conductive layer 213 are overlapped, the conductive layers do not short-circuit with each other.

[0361] For example, in the case of FIG. 17, the shape of the opening of the insulating layer 300 can be made as shown in FIGS. This can be done.

[0362] For example, in the case of FIG. 18, the shape of the opening of the insulating layer 500 can be made as shown in FIGS. This can be done.

[0363] FIG. 19 shows a case where the shape of the opening is such that it spans a plurality of pixels arranged along a first direction 8001. This is an example of a shape.

[0364] In FIG. 19, the opening has an area overlapping with the conductive layer 212 and the like.

[0365] In FIG. 19, the opening has an area where it intersects with the conductive layer 212 and the like.

[0366] FIG. 20 shows a case where the shape of the opening is such that it spans a plurality of pixels arranged along a second direction 8002. This is an example of a shape.

[0367] In FIG. 20, the opening has a region overlapping with the conductive layer 201 and the like.

[0368] In FIG. 20, the opening has a region where it intersects with the conductive layer 201 and the like.

[0369] FIG. 21 shows an example in which the opening is shaped to span all pixels.

[0370] In FIG. 21, the opening is formed by a conductive layer 201, a conductive layer 211, a conductive layer 212, a conductive layer 21 It has an area that overlaps with the 3rd magnitude.

[0371] In FIG. 21, the opening is formed by a conductive layer 201, a conductive layer 211, a conductive layer 212, a conductive layer 21 It has an area that intersects with the 3rd magnitude.

[0372] 19 to 21, the insulating layer 150 and the oxide semiconductor layer 31 0 can increase the contact area.

[0373] By increasing the contact area between the insulating layer 150 and the oxide semiconductor layer 310, the oxide semiconductor The resistance value of the conductor layer 310 can be made lower.

[0374] The openings are holes or grooves.

[0375] The hole has a closed shape.

[0376] The groove shape is an open shape.

[0377] The openings in FIGS. 19 to 21 may be holes or grooves.

[0378] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0379] (Embodiment 8) FIG. 22 shows an example in which a conductive layer 550 and the like are added to the structure shown in FIG.

[0380] FIG. 23 shows an example in which a conductive layer 550 and the like are added to the structure shown in FIG.

[0381] FIG. 24 shows an example in which a conductive layer 550 and the like are added to the structure shown in FIG.

[0382] At least a part of the conductive layer 550 can function as an auxiliary wiring.

[0383] A method for forming the conductive layer 550 will be described.

[0384] The conductive layers 501, 502, etc. are formed by forming a conductive film on the entire surface of the substrate, and then removing the conductive layers 501, 502, etc. The conductive film is etched while a mask is placed at the position where the conductive layer 502 etc. is to be formed. and

[0385] Here, normally, a conductive layer is not formed in the area other than the area where the conductive layer 501, the conductive layer 502, etc. are formed. The etching time is adjusted so that no layer remains.

[0386] However, by shortening the etching time, the edge of the opening (step part) The conductive layer 550 may remain.

[0387] That is, by utilizing the tendency for residue to be generated at the edge of the opening (step portion), A conductive layer 550 can be formed.

[0388] The conductive layer 550 may also be referred to as a conductive sidewall.

[0389] 22 to 24, the oxide semiconductor layer 310 has a recess at a position overlapping the opening. There are.

[0390] The conductive layer 550 has a region that contacts the side surface of the oxide semiconductor layer 310 inside the recess. is doing.

[0391] The conductive layer 550 has a region inside the recess that contacts the top surface of the oxide semiconductor layer 310. is doing.

[0392] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0393] (Embodiment 9) FIG. 25 is an example showing at least a part of one pixel in FIG.

[0394] FIG. 26 is an example showing at least a part of one pixel in FIG.

[0395] FIG. 27 is an example showing at least a part of one pixel in FIG.

[0396] In FIG. 25, the oxide semiconductor layer 310 has a region overlapping with the conductive layer 212.

[0397] In FIG. 25, the oxide semiconductor layer 310 has a region that intersects with the conductive layer 212. .

[0398] In FIG. 25, the oxide semiconductor layer 310 has a region overlapping with the conductive layer 201.

[0399] In FIG. 25, the oxide semiconductor layer 310 has a region that intersects with the conductive layer 201. .

[0400] In FIG. 26, the oxide semiconductor layer 310 has a region overlapping with the conductive layer 212.

[0401] In FIG. 26, the oxide semiconductor layer 310 has a region that intersects with the conductive layer 212. .

[0402] In FIG. 26, the oxide semiconductor layer 310 has a region overlapping with the conductive layer 201.

[0403] In FIG. 26, the oxide semiconductor layer 310 does not intersect with the conductive layer 201.

[0404] In FIG. 27, the oxide semiconductor layer 310 has a region overlapping with the conductive layer 212.

[0405] In FIG. 27, the oxide semiconductor layer 310 does not intersect with the conductive layer 212.

[0406] In FIG. 27, the oxide semiconductor layer 310 has a region overlapping with the conductive layer 201.

[0407] In FIG. 27, the oxide semiconductor layer 310 has a region that intersects with the conductive layer 201. .

[0408] By crossing the oxide semiconductor layer 310 with the conductive layer 212 or the conductive layer 201, multiple The oxide semiconductor layer 310 can be disposed so as to span several pixels.

[0409] The oxide semiconductor layer 310 overlaps with the conductive layer 212 or the conductive layer 201, Since the area of ​​the semiconductor layer 310 can be increased, the resistance value of the oxide semiconductor layer 310 can be increased. It can be lowered.

[0410] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0411] (Embodiment 10) FIG. 28 is an example showing at least a part of two pixels in FIG.

[0412] FIG. 29 is an example showing at least a part of two pixels in FIG.

[0413] The conductive layer 222 is preferably formed in the same step as the conductive layer 201 .

[0414] The oxide semiconductor layer 302 is preferably formed in the same step as the oxide semiconductor layer 301. .

[0415] The conductive layer 511 is preferably formed in the same step as the conductive layer 501 .

[0416] The conductive layer 512 is preferably formed in the same step as the conductive layer 501 .

[0417] The conductive layer 711 is preferably formed in the same step as the conductive layer 701 .

[0418] 28 and 29, the oxide semiconductor layer 310 has a region overlapping with the conductive layer 701. do.

[0419] 28 and 29, the oxide semiconductor layer 310 has a region overlapping with the conductive layer 711. do.

[0420] 28 and 29, the oxide semiconductor layer 310 has a region overlapping with the conductive layer 212. do.

[0421] 28 and 29, the oxide semiconductor layer 310 has a region where it intersects with the conductive layer 212. Has.

[0422] 28 and 29, the oxide semiconductor layer 310 has a region overlapping with the conductive layer 222. do.

[0423] 28 and 29, the oxide semiconductor layer 310 has a region where it intersects with the conductive layer 222. Has.

[0424] 28 and 29, the oxide semiconductor layer 310 has a region overlapping with the conductive layer 201. do.

[0425] In FIG. 28, the oxide semiconductor layer 310 has a region where it intersects with the conductive layer 201.

[0426] In FIG. 29, the oxide semiconductor layer 310 does not intersect with the conductive layer 201.

[0427] By using the configurations shown in FIGS. 28 and 29, the oxide semiconductor is formed across multiple pixels. A conductor layer 310 may be disposed.

[0428] By using the configurations shown in FIGS. 28 and 29, the resistance value of the oxide semiconductor layer 310 is It can be lowered.

[0429] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0430] (Embodiment 11) FIG. 30 shows an example showing at least a part of two pixels in FIG.

[0431] FIG. 31 is an example showing at least a part of two pixels in FIG.

[0432] The conductive layer 202 is a conductive layer formed in the same process as the conductive layer 201 .

[0433] The oxide semiconductor layer 303 is preferably formed in the same step as the oxide semiconductor layer 301. .

[0434] The conductive layer 513 is a conductive layer formed in the same step as the conductive layer 501 .

[0435] The conductive layer 514 is a conductive layer formed in the same step as the conductive layer 501 .

[0436] The conductive layer 712 is a conductive layer formed in the same step as the conductive layer 701 .

[0437] 30 and 31, the oxide semiconductor layer 310 has a region overlapping with the conductive layer 701. do.

[0438] 30 and 31, the oxide semiconductor layer 310 has a region overlapping with the conductive layer 712. do.

[0439] 30 and 31, the oxide semiconductor layer 310 has a region overlapping with the conductive layer 201. do.

[0440] 30 and 31, the oxide semiconductor layer 310 has a region where it intersects with the conductive layer 201. Has.

[0441] 30 and 31, the oxide semiconductor layer 310 has a region overlapping with the conductive layer 202. do.

[0442] 30 and 31, the oxide semiconductor layer 310 has a region where it intersects with the conductive layer 202. Has.

[0443] 30 and 31, the oxide semiconductor layer 310 has a region overlapping with the conductive layer 211. do.

[0444] In FIG. 30, the oxide semiconductor layer 310 has a region where it intersects with the conductive layer 211.

[0445] In FIG. 31, the oxide semiconductor layer 310 does not intersect with the conductive layer 211.

[0446] 30 and 31, the oxide semiconductor layer 310 has a region overlapping with the conductive layer 212. do.

[0447] In FIG. 30, the oxide semiconductor layer 310 has a region where it intersects with the conductive layer 212.

[0448] In FIG. 31, the oxide semiconductor layer 310 does not intersect with the conductive layer 212.

[0449] By using the configurations shown in FIGS. 30 and 31, the oxide semiconductor is formed across multiple pixels. A conductor layer 310 may be disposed.

[0450] By using the configurations shown in FIGS. 30 and 31, the resistance value of the oxide semiconductor layer 310 is It can be lowered.

[0451] The conductive layers (conductive layer 211, conductive layer 212, conductive layer 501, conductive layer 502, conductive layer 503) corresponding to the wiring L2 in FIG. 32. The conductive layer 513, etc. may be similar to the conductive layer 599 in FIG.

[0452] The conductive layer 599 can be formed in the same step as the conductive layers 501, 502, and the like.

[0453] In the case of FIG. 32, when the oxide semiconductor layer 310 is overlapped with the conductive layer 599, the oxide semiconductor layer 31 0 and the conductive layer 599 are shorted. It is preferable to avoid overlapping.

[0454] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0455] (Embodiment 12) Materials of the substrate, the insulating layer, the conductive layer, and the oxide semiconductor layer will be described.

[0456] The substrates are glass substrates, quartz substrates, metal substrates, semiconductor substrates, resin substrates (plastic substrates) ) and the like can be used, but are not limited to these.

[0457] When the oxide semiconductor layer 310 is in contact with a substrate, a glass substrate containing sodium is used. is preferred.

[0458] Since a resin substrate (plastic substrate) contains a large amount of H2O, the oxide semiconductor layer 310 and the substrate When contacting with a plate, it is also preferable to use a resin substrate (plastic substrate).

[0459] When the oxide semiconductor layer 310 is in contact with the substrate, an alkali metal or alkaline earth metal It is more preferable to use a resin substrate (plastic substrate) containing the above.

[0460] The substrate may be flexible.

[0461] When a glass substrate is made thin, it becomes flexible.

[0462] The resin substrate is flexible.

[0463] The insulating layer can be made of any material as long as it has insulating properties.

[0464] The insulating layer may have a single layer structure or a multilayer structure.

[0465] Examples of insulating layers include insulating layers containing inorganic substances and insulating layers containing organic substances. but is not limited to.

[0466] The insulating layer containing an inorganic substance is, for example, a film containing silicon oxide (typically, silicon oxide silicon nitride films, silicon oxide films containing nitrogen, etc.), films containing silicon nitride (typically silicon nitride film, silicon nitride film containing oxygen, etc.), film containing aluminum nitride ( Typically, aluminum nitride film, aluminum nitride film containing oxygen, etc., aluminum oxide Films containing aluminum (typically aluminum oxide films, nitrogen-containing aluminum oxide films) Examples include, but are not limited to, films containing hafnium oxide (typically hafnium oxide film, etc.) I can't.

[0467] An example of an insulating layer containing an organic substance is a resin film.

[0468] Examples of the resin film include a film containing polyimide (typically a polyimide film, etc.), Films containing acrylic (typically acrylic films, etc.), films containing siloxane (typically Siloxane film, etc.), epoxy-containing film (typically epoxy film, etc.), etc. I can't.

[0469] The insulating layer that can function as a gate insulating film is an insulating layer containing an inorganic substance. It is preferable that:

[0470] The conductive layer can be made of any material as long as it is conductive.

[0471] The conductive layer may have a single layer structure or a multilayer structure.

[0472] The conductive layer is a film containing a metal (typically a metal film, an alloy film, etc.), a film containing a transparent conductor, Examples of the conductive film include, but are not limited to, a transparent conductive film.

[0473] Examples of metals include aluminum, titanium, molybdenum, tungsten, chromium, Examples include, but are not limited to, gold, silver, copper, alkali metals, and alkaline earth metals.

[0474] Examples of transparent conductors include indium tin oxide and indium zinc oxide. Not limited.

[0475] Metals have opaque or reflective properties.

[0476] The transparent conductor has light transmitting properties.

[0477] A conductive layer that can function as an electrode of a display element, such as the conductive layer 701, has a light-transmitting property. If it has such a structure, a transmissive display device can be manufactured.

[0478] For example, the conductive layer 701 is preferably a film containing a transparent conductor.

[0479] When a film containing metal is used as the conductive layer 701, a reflective display device can be manufactured. Cut.

[0480] Any material can be used for the oxide semiconductor layer as long as it has semiconductor properties. .

[0481] The oxide semiconductor layer may have a single layer structure or a stacked layer structure.

[0482] A semiconductor layer other than an oxide semiconductor layer may be used.

[0483] Semiconductor layers other than oxide semiconductor layers include silicon-containing semiconductor layers and organic semiconductor layers. These include, but are not limited to:

[0484] The semiconductor layer containing silicon includes a silicon film, a silicon germanium film, and a silicon carbide film. Examples include, but are not limited to, membranes.

[0485] The semiconductor layer other than the oxide semiconductor layer may have a single layer structure or a stacked layer structure.

[0486] The oxide semiconductor layer is a film containing an oxide semiconductor material.

[0487] The oxide semiconductor layer is not limited as long as it is a film containing metal and oxygen.

[0488] For example, a film containing indium and oxygen, a film containing zinc and oxygen, a film containing tin and oxygen, The film containing the oxide can function as an oxide semiconductor layer.

[0489] For example, the oxide semiconductor layer may be an indium oxide film, a tin oxide film, or a zinc oxide film. is not limited to.

[0490] For example, the oxide semiconductor layer may be an In-Zn oxide film, an Sn-Zn oxide film, an Al -Zn-based oxide film, Zn-Mg-based oxide film, Sn-Mg-based oxide film, In-Mg-based oxide film Examples of the material include, but are not limited to, an In-Ga oxide film and an In-Ga based oxide film.

[0491] The AB-based oxide film (A and B are elements) means a film containing A, B, and oxygen.

[0492] For example, the oxide semiconductor layer may be an In-Ga-Zn oxide film or an In-Sn-Zn oxide film. Compound film, Sn-Ga-Zn oxide film, In-Al-Zn oxide film, In-Hf-Zn In-based oxide film, In-La-Zn based oxide film, In-Ce-Zn based oxide film, In-Pr- Zn-based oxide film, In-Nd-Zn-based oxide film, In-Sm-Zn-based oxide film, In-E In-Zn oxide film, In-Gd-Zn oxide film, In-Tb-Zn oxide film, In -Dy-Zn based oxide film, In-Ho-Zn based oxide film, In-Er-Zn based oxide film, In-Tm-Zn oxide film, In-Yb-Zn oxide film, In-Lu-Zn ​​oxide Examples include, but are not limited to, films, Al-Ga-Zn oxide films, Sn-Al-Zn oxide films, etc. .

[0493] An ABC oxide film (A, B, and C are elements) is a film containing A, B, C, and oxygen. means.

[0494] For example, the oxide semiconductor layer may be an In-Sn-Ga-Zn oxide film, an In-Hf-G a-Zn oxide film, In-Al-Ga-Zn oxide film, In-Sn-Al-Zn acid oxide film, In-Sn-Hf-Zn oxide film, In-Hf-Al-Zn oxide film, etc. but is not limited to.

[0495] ABCD oxide film (A, B, C, D are elements) is a film made of A, B, C, D and oxygen. It means a film containing

[0496] As the oxide semiconductor layer, a film containing indium, gallium, zinc, and oxygen is particularly preferred. I wish.

[0497] Fabricating both N-type and P-type transistors using an oxide semiconductor layer is possible, but N-type transistors are preferred because they are more practical than P-type transistors. .

[0498] The oxide semiconductor layer preferably has a crystal structure.

[0499] The crystal is oriented so that the C-axis direction is perpendicular to the surface of the oxide semiconductor layer or the substrate. preferable.

[0500] The crystals with the C-axis oriented perpendicular to the surface of the oxide semiconductor layer or substrate are called CAAC (C This is called an Axis-Aligned Crystal.

[0501] The angle between the C axis of the crystal and the surface of the oxide semiconductor layer or the substrate is preferably 90 degrees, but it is also preferable that the angle be 80 degrees. It may be between 100°C and 100°C.

[0502] As an example of a method for manufacturing CAAC, an oxide semiconductor layer is formed by a sputtering method. In the first method, the substrate temperature during film formation is set to 200° C. or higher and 450° C. or lower.

[0503] In the first method, CAAC is formed on the lower and upper layers of an oxide semiconductor layer.

[0504] As an example of a method for manufacturing CAAC, an oxide semiconductor layer is formed, and then a 65 The second method involves heat treatment at 0°C or above for at least 3 minutes.

[0505] In the second method, a CAAC is formed at least on the upper layer of the oxide semiconductor layer (second method Pattern of Law A).

[0506] In the second method, the thickness of the oxide semiconductor layer is reduced, so that the lower and upper layers A CAAC can be formed (pattern B of the second method).

[0507] As an example of a method for producing CAAC, the first oxide film formed by pattern B of the second method is There is a third method in which a second oxide semiconductor layer is formed on the oxide semiconductor layer.

[0508] The method for forming the oxide semiconductor layer in the second and third methods is not limited to the sputtering method. Not determined.

[0509] By the first to third methods, the angle between the C axis and the surface of the oxide semiconductor layer or the substrate is 80 degrees. Crystals can be formed that are above 100 degrees Celsius or below.

[0510] In the first to third methods, an oxide semiconductor layer having a CAAC at least on the upper layer (surface) is formed. It can be formed.

[0511] The oxide semiconductor layer containing CAAC can block H2O, H, etc. because it is dense. do.

[0512] The oxide semiconductor layer in contact with the insulating layer 150 preferably has an amorphous portion.

[0513] When the oxide semiconductor layer is formed using CAAC, plasma is generated in the oxide semiconductor layer that comes into contact with the resin layer. By performing the annealing treatment, at least a part of the oxide semiconductor layer in contact with the resin layer is made amorphous. It can be made into

[0514] The oxide semiconductor layer that is not in contact with the insulating layer 150 is made of insulating material so as not to contain H2O. Preferably, the oxide semiconductor layer that is not in contact with layer 150 is not subjected to the plasma treatment.

[0515] The plasma treatment includes hydrogen plasma treatment, rare gas plasma treatment, and halogen plasma treatment. The principles include, but are not limited to:

[0516] The crystalline state of the oxide semiconductor layer that is not in contact with the insulating layer 150 and the crystalline state of the oxide semiconductor layer that is in contact with the insulating layer 150 It is preferable that the crystalline state of the amorphous semiconductor layer is different from that of the amorphous semiconductor layer.

[0517] For example, the crystalline state of the oxide semiconductor layer in contact with the insulating layer 150 is changed by changing the crystalline state of the oxide semiconductor layer not in contact with the insulating layer 150. By making the crystalline state easier for H2O and H to penetrate than the oxide semiconductor layer, The resistivity of the oxide semiconductor layer in contact with the insulating layer 150 is compared with that of the oxide semiconductor layer not in contact with the insulating layer 150. It can be made lower than the resistivity.

[0518] For example, the oxide semiconductor layer that is not in contact with the insulating layer 150 may be an oxide semiconductor layer having CAAC. For example, the oxide semiconductor layer in contact with the insulating layer 150 may be an amorphous oxide semiconductor layer, a microcrystalline oxide semiconductor layer, or a A crystalline oxide semiconductor layer or a non-single-crystal oxide semiconductor layer such as a polycrystalline oxide semiconductor layer is used.

[0519] The fine crystals include, for example, nanocrystals and microcrystals.

[0520] For example, the crystallinity of the oxide semiconductor layer in contact with the insulating layer 150 can be improved by adjusting the crystallinity of the oxide semiconductor layer not in contact with the insulating layer 150. By increasing the crystallinity of the oxide semiconductor layer to a level higher than that of the insulating layer 150, the oxide semiconductor layer in contact with the insulating layer 150 The resistivity of the semiconductor layer is made lower than the resistivity of the oxide semiconductor layer that is not in contact with the insulating layer 150. can be done.

[0521] In particular, the oxide semiconductor layer that is not in contact with the insulating layer 150 is treated as an oxide semiconductor layer having CAAC. In such a case, the oxide semiconductor layer in contact with the insulating layer 150 is made to be a single-crystal oxide semiconductor layer. It is possible.

[0522] The difference in crystalline state can be confirmed by, for example, electron beam diffraction.

[0523] For example, different electron diffraction patterns indicate different crystalline states.

[0524] The crystal state of the oxide semiconductor layer that is not in contact with the insulating layer 150 and the oxide semiconductor layer that is in contact with the insulating layer 150 The method for making the crystal state of the semiconductor layer different from that of the semiconductor layer is not limited.

[0525] For example, an oxide semiconductor layer that is not in contact with the insulating layer 150 and an oxide semiconductor layer that is in contact with the insulating layer 150 may be formed. After simultaneously forming the conductor layer, the oxide semiconductor layer or the insulating layer 150 that is not in contact with the insulating layer 150 is By destroying the crystal of one of the oxide semiconductor layers in contact with the insulating layer 150, The crystalline state of the oxide semiconductor layer that is not in contact with the insulating layer 150 and the crystalline state of the oxide semiconductor layer that is in contact with the insulating layer 150 are different. can be different.

[0526] Methods for destroying crystals include plasma treatment, ion doping, and ion implantation. but is not limited to.

[0527] For example, a method for forming an oxide semiconductor layer that does not contact the insulating layer 150 and a method for forming an oxide semiconductor layer that does contact the insulating layer 150 By using a method for forming the oxide semiconductor layer different from that of the insulating layer 150, The crystalline state of the oxide semiconductor layer not in contact with the insulating layer 150 is different from the crystalline state of the oxide semiconductor layer in contact with the insulating layer 150. It can be different.

[0528] When describing "B above A," it means that at least a part of B is located above A. Taste.

[0529] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0530] (Embodiment 13) In the other embodiments, the transistor having the inverse staggered structure has been described. The structure of is not limited.

[0531] For example, a structure in which the source electrode and the drain electrode are disposed between the gate insulating film and the active layer It's okay to have it.

[0532] For example, a transistor having a staggered structure may be used.

[0533] For example, a bottom gate transistor may be used, or a top gate transistor may be used. Alternatively, a double-gate transistor having gate electrodes above and below the active layer may be used. may be adopted.

[0534] The specific structure of the bottom gate transistor is not limited, and the top gate transistor may be The specific structure of the double-gate transistor is not limited. I can't.

[0535] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0536] (Embodiment 14) In another embodiment, the oxide semiconductor layer 310 is used as the other electrode of the capacitor element or the other electrode of the display element. However, the oxide semiconductor layer 310 may be used as one of the electrodes of a capacitor. It may also be used as one electrode of a display element.

[0537] The oxide semiconductor layer 310 is used as one electrode of a capacitor or one electrode of a display element. In this case, the oxide semiconductor layer 310 may be electrically connected to the transistor.

[0538] The oxide semiconductor layer 310 is used for an element other than a capacitance element and a display element (for example, a memory element, a photoelectric conversion element, etc.). It may also be used as an electrode for a conversion element, etc.

[0539] When the oxide semiconductor layer 310 is used as one electrode of a display element, a conductive layer 701 is provided. It's not necessary.

[0540] The oxide semiconductor layer 310 is used for elements other than display elements (for example, memory elements, photoelectric conversion elements, etc.). When used as an electrode, the conductive layer 701 does not need to be provided.

[0541] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0542] (Embodiment 15) A semiconductor device is a device that has an element that includes a semiconductor.

[0543] The elements having semiconductors include, for example, transistors, resistors, capacitors, diodes, etc. be.

[0544] The transistor is preferably, but not limited to, a field effect transistor.

[0545] The transistor is preferably, but not limited to, a thin film transistor.

[0546] Examples of the semiconductor device include a display device having a display element and a storage device having a storage element. , RFID, processors, etc., but are not limited to them.

[0547] Examples of the display device include a liquid crystal display device having a liquid crystal element, an EL display device having an EL element, Examples of the display device include, but are not limited to, electrophoretic display devices having electrophoretic elements.

[0548] In the other embodiments, the liquid crystal display device has been mainly described. It is applicable to any semiconductor device.

[0549] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above. [Explanation of symbols]

[0550] 101 Substrate 102 Circuit Board 150 insulating layer 201 Conductive layer 202 Conductive layer 203 Conductive Layer 211 Conductive layer 212 Conductive layer 213 Conductive Layer 214 Conductive layer 222 Conductive layer 300 insulating layer 301 Oxide semiconductor layer 302 Oxide semiconductor layer 303 Oxide semiconductor layer 310 Oxide semiconductor layer 500 insulating layer 501 Conductive layer 502 Conductive layer 503 Conductive layer 511 Conductive layer 512 Conductive layer 513 Conductive layer 514 Conductive layer 521 Conductive layer 522 Conductive layer 523 Conductive Layer 524 Conductive Layer 525 Conductive Layer 526 Conductive Layer 527 Conductive Layer 528 Conductive Layer 529 Conductive Layer 550 Conductive layer 599 Conductive Layer 701 Conductive layer 711 Conductive layer 712 Conductive layer 800 LCD layers 900 Conductive Layer 8001 First Direction 8002 Second Direction Tr transistor L1 wiring L2 cabling L3 cabling L4 cabling C Capacitor element LC liquid crystal element

Claims

1. a first transistor and a second transistor; the first transistor is adjacent to the second transistor in a column direction; one of a source electrode and a drain electrode of the first transistor is electrically connected to a source wiring; a display device in which one of a source electrode and a drain electrode of the second transistor is electrically connected to the source wiring, a first conductive layer having a region that functions as a gate electrode of the first transistor and a region that functions as a first scan line; a second conductive layer having a region functioning as a gate electrode of the second transistor and a region functioning as a second scan line; an insulating layer having a region located above the first conductive layer and functioning as a gate insulating layer of the first transistor; a first semiconductor layer having a region on and in contact with the insulating layer and having a channel formation region of the first transistor; a second semiconductor layer having a region on the insulating layer and a region overlapping the first conductive layer; a third conductive layer having a region on and in contact with the first semiconductor layer and functioning as one of a source electrode and a drain electrode of the first transistor; a fourth conductive layer having a region on and in contact with the first semiconductor layer and functioning as the other of the source electrode and the drain electrode of the first transistor; a fifth conductive layer having a region overlapping the first conductive layer and a region in contact with the second semiconductor layer; a sixth conductive layer electrically connected to the third conductive layer and having a region that functions as a pixel electrode; the fifth conductive layer does not have an area overlapping with the second conductive layer, A display device, wherein an area of ​​a region where the second semiconductor layer and the first conductive layer overlap is larger than an area of ​​a region where the fifth conductive layer and the first conductive layer overlap.

2. a first transistor and a second transistor; the first transistor is adjacent to the second transistor in a column direction; one of a source electrode and a drain electrode of the first transistor is electrically connected to a source wiring; a display device in which one of a source electrode and a drain electrode of the second transistor is electrically connected to the source wiring, a first conductive layer having a region that functions as a gate electrode of the first transistor and a region that functions as a first scan line; a second conductive layer having a region functioning as a gate electrode of the second transistor and a region functioning as a second scan line; an insulating layer having a region located above the first conductive layer and functioning as a gate insulating layer of the first transistor; a first semiconductor layer having a region on and in contact with the insulating layer and having a channel formation region of the first transistor; a second semiconductor layer having a region on the insulating layer and a region overlapping the first conductive layer; a third conductive layer having a region on and in contact with the first semiconductor layer and functioning as one of a source electrode and a drain electrode of the first transistor; a fourth conductive layer having a region on and in contact with the first semiconductor layer and functioning as the other of the source electrode and the drain electrode of the first transistor; a fifth conductive layer having a region overlapping the first conductive layer and a region in contact with the second semiconductor layer; a sixth conductive layer electrically connected to the third conductive layer and having a region that functions as a pixel electrode; the fifth conductive layer does not have an area overlapping with the second conductive layer, A display device in which the width of the region where the second semiconductor layer and the first conductive layer overlap in a direction extending along the major axis of the first conductive layer is larger than the width of the region where the fifth conductive layer and the first conductive layer overlap.

3. a first transistor and a second transistor; the first transistor is adjacent to the second transistor in a column direction; one of a source electrode and a drain electrode of the first transistor is electrically connected to a source wiring; a display device in which one of a source electrode and a drain electrode of the second transistor is electrically connected to the source wiring, a first conductive layer having a region that functions as a gate electrode of the first transistor and a region that functions as a first scan line; a second conductive layer having a region functioning as a gate electrode of the second transistor and a region functioning as a second scan line; an insulating layer having a region located above the first conductive layer and functioning as a gate insulating layer of the first transistor; a first semiconductor layer having a region on and in contact with the insulating layer and having a channel formation region of the first transistor; a second semiconductor layer having a region on the insulating layer and a region overlapping the first conductive layer; a third conductive layer having a region on and in contact with the first semiconductor layer and functioning as one of a source electrode and a drain electrode of the first transistor; a fourth conductive layer having a region on and in contact with the first semiconductor layer and functioning as the other of the source electrode and the drain electrode of the first transistor; a fifth conductive layer having a region overlapping the first conductive layer and a region in contact with the second semiconductor layer; a sixth conductive layer electrically connected to the third conductive layer and having a region that functions as a pixel electrode; the fifth conductive layer does not have an area overlapping with the second conductive layer, the fifth conductive layer does not have an area overlapping with the sixth conductive layer, A display device, wherein an area of ​​a region where the second semiconductor layer and the first conductive layer overlap is larger than an area of ​​a region where the fifth conductive layer and the first conductive layer overlap.

4. a first transistor and a second transistor; the first transistor is adjacent to the second transistor in a column direction; one of a source electrode and a drain electrode of the first transistor is electrically connected to a source wiring; a display device in which one of a source electrode and a drain electrode of the second transistor is electrically connected to the source wiring, a first conductive layer having a region that functions as a gate electrode of the first transistor and a region that functions as a first scan line; a second conductive layer having a region functioning as a gate electrode of the second transistor and a region functioning as a second scan line; an insulating layer having a region located above the first conductive layer and functioning as a gate insulating layer of the first transistor; a first semiconductor layer having a region on and in contact with the insulating layer and having a channel formation region of the first transistor; a second semiconductor layer having a region on the insulating layer and a region overlapping the first conductive layer; a third conductive layer having a region on and in contact with the first semiconductor layer and functioning as one of a source electrode and a drain electrode of the first transistor; a fourth conductive layer having a region on and in contact with the first semiconductor layer and functioning as the other of the source electrode and the drain electrode of the first transistor; a fifth conductive layer having a region overlapping the first conductive layer and a region in contact with the second semiconductor layer; a sixth conductive layer electrically connected to the third conductive layer and having a region that functions as a pixel electrode; the fifth conductive layer does not have an area overlapping with the second conductive layer, the fifth conductive layer does not have an area overlapping with the sixth conductive layer, A display device in which the width of the region where the second semiconductor layer and the first conductive layer overlap in a direction extending along the major axis of the first conductive layer is larger than the width of the region where the fifth conductive layer and the first conductive layer overlap.

5. In any one of claims 1 to 4, A display device in which the fifth conductive layer is disposed so as to entirely overlap the first conductive layer.

6. In any one of claims 1 to 5, The first to fifth conductive layers include molybdenum and aluminum.

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