organic electroluminescence element

Abstract

The present invention relates to an organic electroluminescent device comprising at least one light-emitting layer B consisting of one or more sublayers, the one or more sublayers of the light-emitting layer B being entirely composed of at least one host material H B , at least one phosphorescent material P B , at least one small FWHM emitter S B and optionally at least one TADF material E B where S B The emits light having a full width at half maximum (FWHM) of 0.25 eV or less.

Description

[Technical Field]

[0001] The present invention relates to an organic electroluminescent device comprising one or more light-emitting layers B, each of which consists of one or more sublayers, wherein the one or more sublayers of each light-emitting layer B are entirely made of at least one host material H B , at least one phosphorescent material P B , at least one small FWHM emitter S B and optionally at least one TADF material E B wherein at least one, preferably each, S B The organic electroluminescent device according to the present invention emits light having a full width at half maximum (FWHM) of 0.25 eV or less. The present invention also relates to a method for generating light using the organic electroluminescent device according to the present invention. Summary of the Invention [Problem to be solved by the invention]

[0002] Organic electroluminescent devices, including one or more organic-based light-emitting layers, such as organic light-emitting diodes (OLEDs), light-emitting electrochemical cells (LECs), and light-emitting transistors, are becoming increasingly important. In particular, OLEDs are promising devices for electronic products such as screens, displays, and lighting devices. In contrast to most electroluminescent devices, which are essentially inorganic, organic-based organic electroluminescent devices are often flexible and can be produced, especially in thin films. Currently available OLED-based screens and displays offer excellent efficiency and long lifetimes, or excellent color purity and long lifetimes, but do not combine all three of these properties: excellent efficiency, long lifetime, and excellent color purity.

[0003] The color purity or color point of an OLED is typically given by CIEx and CIEy coordinates, while the color gamut of next-generation displays is given by so-called BT-2020 and DCPI3 values. To achieve such color coordinates, a top-emitting device typically requires a cavity modification to adjust the color coordinates. To achieve high efficiency in a top-emitting device while targeting such a color gamut, a narrow emission spectrum is required in a bottom-emitting device.

[0004] Modern phosphorescent emitters exhibit fairly broad emission, which is reflected by the broad emission of phosphorescent-based OLEDs (PHOLEDs), which typically have emission spectral full width at half maximum (FWHM) greater than 0.25 eV. The broad emission spectrum of PHOLEDs in bottom devices results in high losses of outcoupling efficiency for top-emitting device structures targeting the BT-2020 and DCPI trichromatic regions.

[0005] Furthermore, phosphorescent materials are typically based on transition metals, such as iridium, which are typically scarce and therefore very expensive materials in OLED stacks. Therefore, transition metal-based materials offer the greatest potential for OLED cost reduction. Reducing the content of transition metals in OLED stacks is a key performance indicator for pricing OLED applications.

[0006] In recent years, some fluorescent or thermally-activated-delayed-fluorescence (TADF) emitters have been developed that exhibit fairly narrow emission spectra, typically with a FWHM of 0.25 eV or less, and are therefore suitable for achieving the BT-2020 and DCPI trichromatic regions. However, such fluorescent and TADF emitters typically suffer from low efficiency due to short lifetimes as well as efficiency declines at higher luminances (i.e., OLED roll-off behavior), e.g., due to exciton-polaron annihilation or exciton-exciton annihilation.

[0007] These drawbacks can be overcome to some extent by applying the so-called hyper approach. The latter relies on the use of an energy pump to transfer energy to a fluorescent emitter that preferably exhibits a narrow emission spectrum, as described above. The energy pump can be, for example, a TADF material that exhibits reverse intersystem crossing (RISC) or a transition metal complex that exhibits efficient intersystem crossing (ISC). However, such an approach still fails to provide an organic electroluminescent device that has all of the aforementioned desirable features, i.e., excellent efficiency, long lifetime, and excellent color purity.

[0008] The main element of an organic electroluminescent device for generating light is usually at least one light-emitting layer located between a positive electrode and a negative electrode. When a voltage (and current) is applied to the organic electroluminescent device, holes are injected from the positive electrode and electrons are injected from the negative electrode.

[0009] Typically, a hole transport layer is located (typically) between the light-emitting layer and the positive electrode, and an electron transport layer is located between the light-emitting layer and the negative electrode. The different layers are arranged sequentially. High-energy excitons are generated in the light-emitting layer by recombination of holes and electrons. Decay of such excited states (e.g., singlet states such as S1 and / or triplet states such as T1) to the bottom state (S0) preferably causes light emission. [Means for solving the problem]

[0010] It has surprisingly been found that an emissive layer of an organic electroluminescent device consisting of one or more layers comprising a phosphorescent material, a small full width at half maximum (FWHM) emitter, a host material, and optionally a TADF material, provides an organic electroluminescent device that has a long lifetime, a high quantum yield, and exhibits narrow emission that is ideally suited to achieving the BT-2020 and DCPI tricolor regions.

[0011] Here, phosphorescent materials and / or optional TADF materials can transfer energy to small full width half maximum (FWHM) emitters that emit light. DETAILED DESCRIPTION OF THE INVENTION

[0012] The present invention relates to an organic electroluminescent device comprising at least one light-emitting layer B consisting of one or more sublayers adjacent to one another and comprising, in total: (i) The lowest excited singlet state energy level E(S1 H ) and the lowest excited triplet state energy level E(T1 H at least one host material H B , (ii) The lowest excited singlet state energy level E(S1 P ) and the lowest excited triplet state energy level E(T1 P ) at least one phosphorescent material P B , (iii) The lowest excited singlet state energy level E(S1 S ) and the lowest excited triplet state energy level E(T1 S ) and at least one small full width at half maximum (FWHM) emitter S emitting light having a full width at half maximum (FWHM) of 0.25 eV or less. B , and selectively (iv) The lowest excited singlet state energy level E(S1 E ) and the lowest excited triplet state energy level E(T1 E At least one thermally activated delayed fluorescence (TADF) material E B , Here, one or more sublayers located on the outer surface of the light-emitting layer B are made of a phosphorescent material P B , small FWHM emitter S B and TADF material E B The material comprises at least one (emitter) material selected from the group consisting of:

[0013] One aspect of the present invention relates to an organic electroluminescent device comprising at least one light-emitting layer B comprising one or more sublayers, wherein the one or more sublayers are adjacent to one another and generally comprise: (i) The lowest excited singlet state energy level E(S1 H ) and the lowest excited triplet state energy level E(T1 H ) a host material H B , (ii) The lowest excited singlet state energy level E(S1 P ) and the lowest excited triplet state energy level E(T1 P ) a phosphorescent material P B , (iii) The lowest excited singlet state energy level E(S1 S ) and the lowest excited triplet state energy level E(T1 S ) and emits light with a full width at half maximum (FWHM) of 0.25 eV or less. B , and selectively (iv) The lowest excited singlet state energy level E(S1 E ) and the lowest excited triplet state energy level E(T1 E ) thermally activated delayed fluorescence (TADF) material E B , Here, one or more sublayers located on the outer surface of the light-emitting layer B are made of a phosphorescent material P B , small FWHM emitter S B and TADF material E B The material comprises at least one (emitter) material selected from the group consisting of:

[0014] In one embodiment of the present invention, at least one of the one or more sublayers of at least one light-emitting layer B comprises: (iv) The lowest excited singlet state energy level E(S1 E ) and the lowest excited triplet state energy level E(T1 E At least one thermally activated delayed fluorescence (TADF) material E B .

[0015] In one embodiment of the present invention, the organic electroluminescent device comprises at least one light-emitting layer B consisting of one or more sublayers, wherein one or more sublayers of the light-emitting layer B comprise: (i) The lowest excited singlet state energy level E(S1 H ) and the lowest excited triplet state energy level E(T1 H at least one host material H B , (ii) The lowest excited singlet state energy level E(S1 P ) and the lowest excited triplet state energy level E(T1 P ) at least one phosphorescent material P B , (iii) The lowest excited singlet state energy level E(S1 S ) and the lowest excited triplet state energy level E(T1 S ) and at least one small full width at half maximum (FWHM) emitter S emitting light having a full width at half maximum (FWHM) of 0.25 eV or less. B , and selectively (iv) The lowest excited singlet state energy level E(S1 E ) and the lowest excited triplet state energy level E(T1 E At least one thermally activated delayed fluorescence (TADF) material E B .

[0016] In one embodiment of the present invention, the organic electroluminescent device comprises at least one light-emitting layer B consisting of one or more sublayers, wherein one or more sublayers of the light-emitting layer B comprise: (i) The lowest excited singlet state energy level E(S1 H ) and the lowest excited triplet state energy level E(T1 H ) a host material H B , (ii) The lowest excited singlet state energy level E(S1 P ) and the lowest excited triplet state energy level E(T1 P ) a phosphorescent material P B , (iii) The lowest excited singlet state energy level E(S1 S ) and the lowest excited triplet state energy level E(T1 S ) and emits light with a full width at half maximum (FWHM) of 0.25 eV or less. B , and (iv) The lowest excited singlet state energy level E(S1 E ) and the lowest excited triplet state energy level E(T1 E ) thermally activated delayed fluorescence (TADF) material E B .

[0017] In one embodiment of the present invention, the organic electroluminescent device comprises at least one light-emitting layer B consisting of one or more sublayers, wherein one or more sublayers of the light-emitting layer B comprise: (i) The lowest excited singlet state energy level E(S1 H ) and the lowest excited triplet state energy level E(T1 H at least one host material H B , (ii) The lowest excited singlet state energy level E(S1 P ) and the lowest excited triplet state energy level E(T1 P ) at least one phosphorescent material P B , (iii) The lowest excited singlet state energy level E(S1 S ) and the lowest excited triplet state energy level E(T1 S ) and at least one small full width at half maximum (FWHM) emitter S emitting light having a full width at half maximum (FWHM) of 0.25 eV or less. B , and (iv) The lowest excited singlet state energy level E(S1 E ) and the lowest excited triplet state energy level E(T1 E At least one thermally activated delayed fluorescence (TADF) material E B .

[0018] In one embodiment of the present invention, the organic electroluminescent device comprises at least one light-emitting layer B comprising: (i) The lowest excited singlet state energy level E(S1 H ) and the lowest excited triplet state energy level E(T1 H at least one host material H B , (ii) The lowest excited singlet state energy level E(S1 P ) and the lowest excited triplet state energy level E(T1 P ) at least one phosphorescent material P B , (iii) The lowest excited singlet state energy level E(S1 S ) and the lowest excited triplet state energy level E(T1 S ) and at least one small full width at half maximum (FWHM) emitter S emitting light having a full width at half maximum (FWHM) of 0.25 eV or less. B , and (iv) The lowest excited singlet state energy level E(S1 E ) and the lowest excited triplet state energy level E(T1 E At least one thermally activated delayed fluorescence (TADF) material E B .

[0019] In one embodiment of the present invention, the organic electroluminescent device comprises an emissive layer B consisting of exactly one layer comprising: (i) Host material H B , (ii) Phosphorescent material P B , (iii) Small full width at half maximum (FWHM) emitter S B , and selectively (iv)TADF material E B .

[0020] In a preferred embodiment, the organic electroluminescent device comprises an emissive layer B consisting of exactly one layer comprising: (i) at least one host material H B , (ii) at least one phosphorescent material P B , (iii) at least one small full width at half maximum (FWHM) emitter S B , and (iv) at least one thermally activated delayed fluorescence (TADF) material E B .

[0021] Sublayer Combination In a preferred embodiment of the present invention, the electroluminescent device according to the present invention comprises at least one light-emitting layer B consisting of exactly one (sub)layer. In a preferred embodiment of the present invention, each light-emitting layer B comprised in the electroluminescent device according to the present invention consists of exactly one (sub)layer. In a preferred embodiment of the present invention, the electroluminescent device according to the present invention comprises exactly one light-emitting layer B consisting of exactly one (sub)layer.

[0022] In another embodiment of the present invention, an electroluminescent device according to the present invention comprises at least one light-emitting layer B consisting of one or more sublayers. In another embodiment of the present invention, each light-emitting layer B comprised in an electroluminescent device according to the present invention comprises one or more sublayers. In another embodiment of the present invention, each light-emitting layer B comprised in an electroluminescent device according to the present invention consists of one or more sublayers.

[0023] In another embodiment of the invention, the electroluminescent device according to the invention comprises exactly one light-emitting layer B consisting of one or more sublayers. In another embodiment of the invention, the electroluminescent device according to the invention comprises at least one light-emitting layer B consisting of exactly two sublayers.

[0024] In another embodiment of the invention, each light-emitting layer B comprised in an electroluminescent device according to the invention consists of exactly two sublayers.In another embodiment of the invention, an electroluminescent device according to the invention comprises exactly one light-emitting layer B consisting of exactly two sublayers.

[0025] In another embodiment of the present invention, the electroluminescent device according to the present invention comprises at least one light-emitting layer B consisting of two or more sublayers. In another embodiment of the present invention, each light-emitting layer B comprised in the electroluminescent device according to the present invention consists of two or more sublayers.

[0026] In another embodiment of the invention, the electroluminescent device according to the invention comprises exactly one light-emitting layer B which consists of two or more sublayers.

[0027] In one embodiment of the present invention, each light-emitting layer B of the organic electroluminescent device according to the present invention comprises exactly one, exactly two or exactly three sub-layers.

[0028] It is understood that the different sublayers of the light-emitting layer B do not necessarily all contain the same materials, and even more preferably do not contain the same materials in the same proportions.

[0029] The different sublayers of the light-emitting layer B are understood to be adjacent to one another.

[0030] In one embodiment of the present invention, at least one sublayer is made of exactly one TADF material E B and exactly one phosphorescent material P B Includes.

[0031] In one embodiment of the present invention, the electroluminescent device according to the present invention comprises at least one light-emitting layer B consisting of one or more sublayers, wherein at least one sublayer is made of a TADF material E B , phosphorescent material P B or small FWHM emitter S B Does not include.

[0032] In one embodiment of the present invention, the electroluminescent device according to the present invention comprises at least one light-emitting layer B consisting of one or more sublayers, wherein at least one sublayer comprises at least one host material H B , exactly one phosphorescent material PB and exactly one small FWHM emitter S B Includes.

[0033] In one embodiment of the present invention, the electroluminescent device according to the present invention comprises at least one light-emitting layer B consisting of one or more sublayers, wherein at least one sublayer comprises at least one host material H B , exactly one TADF material E B , exactly one phosphorescent material P B and exactly one small FWHM emitter S B Includes.

[0034] In one embodiment of the present invention, the electroluminescent device according to the invention comprises at least one light-emitting layer B consisting of one or more sublayers, where at least one sublayer contains exactly one host material H B , exactly one TADF material E B , exactly one phosphorescent material P B and exactly one small FWHM emitter S B Includes.

[0035] In one embodiment of the present invention, the electroluminescent device according to the invention comprises at least one light-emitting layer B consisting of one or more sublayers, where at least one sublayer contains exactly one host material H B , exactly one phosphorescent material P B and exactly one small FWHM emitter S B Includes.

[0036] In a preferred embodiment of the invention, the electroluminescent device according to the invention comprises at least one light-emitting layer B consisting of one or more sublayers, where at least one sublayer contains exactly one host material H B Includes.

[0037] In a preferred embodiment of the present invention, the electroluminescent device according to the present invention comprises at least one light-emitting layer B consisting of one or more sublayers, where the one or more sublayers contain exactly one TADF material EB Includes.

[0038] In a preferred embodiment of the present invention, the electroluminescent device according to the present invention comprises at least one light-emitting layer B consisting of one or more sublayers, where at least one sublayer contains exactly one phosphorescent material P B Includes.

[0039] In a preferred embodiment of the present invention, the electroluminescent device according to the present invention comprises at least one light-emitting layer B consisting of one or more sublayers, where at least one sublayer contains exactly one small FWHM emitter S B Includes.

[0040] In a preferred embodiment of the invention, the electroluminescent device according to the invention comprises at least one light-emitting layer B consisting of one or more sublayers, where at least one sublayer contains exactly one host material H B and exactly one TADF material E B Includes.

[0041] In a preferred embodiment of the invention, the electroluminescent device according to the invention comprises at least one light-emitting layer B consisting of one or more sublayers, where at least one sublayer contains exactly one host material H B and exactly one phosphorescent material P B Includes.

[0042] In a preferred embodiment of the invention, the electroluminescent device according to the invention comprises at least one light-emitting layer B consisting of one or more sublayers, where at least one sublayer contains exactly one host material H B and exactly one small FWHM emitter S B Includes.

[0043] In a preferred embodiment of the present invention, the electroluminescent device according to the present invention comprises at least one light-emitting layer B consisting of one or more sublayers, where at least one sublayer contains exactly one TADF material E Band exactly one small FWHM emitter S B Includes.

[0044] In a preferred embodiment of the present invention, the electroluminescent device according to the present invention comprises at least one light-emitting layer B consisting of one or more sublayers, where at least one sublayer contains exactly one TADF material E B and exactly one phosphorescent material P B Includes.

[0045] In a preferred embodiment of the present invention, the electroluminescent device according to the present invention comprises at least one light-emitting layer B consisting of one or more sublayers, where at least one sublayer contains exactly one phosphorescent material P B and exactly one small FWHM emitter S B Includes.

[0046] In a preferred embodiment of the invention, the electroluminescent device according to the invention comprises at least one light-emitting layer B consisting of one or more sublayers, where at least one sublayer contains exactly one host material H B , exactly one TADF material E B and exactly one small FWHM emitter S B Includes.

[0047] In a preferred embodiment of the invention, the electroluminescent device according to the invention comprises at least one light-emitting layer B consisting of one or more sublayers, where at least one sublayer contains exactly one host material H B , exactly one TADF material E B and exactly one phosphorescent material P B Includes.

[0048] In a preferred embodiment of the invention, the electroluminescent device according to the invention comprises at least one light-emitting layer B consisting of one or more sublayers, where at least one sublayer contains exactly one host material H B , exactly one phosphorescent material P B and exactly one small FWHM emitter SB Includes.

[0049] In a preferred embodiment of the present invention, the electroluminescent device according to the present invention comprises at least one light-emitting layer B consisting of one or more sublayers, where at least one sublayer contains exactly one phosphorescent material P B , exactly one TADF material E B and exactly one small FWHM emitter S B Includes.

[0050] In a preferred embodiment of the invention, the electroluminescent device according to the invention comprises at least one light-emitting layer B consisting of one or more sublayers, where at least one sublayer contains exactly one host material H B , exactly one TADF material E B , exactly one phosphorescent material P B and exactly one small FWHM emitter S B Includes.

[0051] In a preferred embodiment of the present invention, one sublayer contains exactly one TADF material E B and one sublayer (preferably the other sublayer) contains exactly one phosphorescent material P B and exactly one small FWHM emitter S B Includes.

[0052] In a preferred embodiment of the present invention, the electroluminescent device according to the present invention comprises at least one light-emitting layer B comprising (or consisting of) three or more sublayers, where the first sublayer B1 comprises exactly one TADF material E B and the second sublayer B2 comprises exactly one phosphorescent material P B and the third sublayer B3 contains exactly one small FWHM emitter S B Includes.

[0053] The sublayers of the light-emitting layer B can also be fabricated in other orders, such as B1-B2-B3, B1-B3-B2, B2-B1-B3, B2-B3-B1, B3-B2-B1, B3-B1-B2, with one or more other sublayers in between.

[0054] In a preferred embodiment of the present invention, the electroluminescent device according to the present invention comprises at least one light-emitting layer B comprising (or consisting of) two or more sublayers, where the first sublayer B1 comprises exactly one TADF material E B and exactly one phosphorescent material P B and the second sublayer B2 contains exactly one small FWHM emitter S B Includes.

[0055] In a preferred embodiment of the present invention, the electroluminescent device according to the present invention comprises at least one light-emitting layer B comprising (or consisting of) two or more sublayers, where the first sublayer B1 comprises exactly one TADF material E B and the second sublayer B2 comprises exactly one phosphorescent material P B and exactly one small FWHM emitter S B Includes.

[0056] In a preferred embodiment of the present invention, the electroluminescent device according to the present invention comprises at least one light-emitting layer B comprising (or consisting of) two or more sublayers, where the first sublayer B1 contains exactly one phosphorescent material P B and the second sublayer B2 comprises exactly one TADF material E B and exactly one small FWHM emitter S B Includes.

[0057] In a preferred embodiment of the present invention, the electroluminescent device according to the present invention comprises at least one light-emitting layer B comprising (or consisting of) two or more sublayers, where the first sublayer B1 comprises exactly one small FWHM emitter S B and the second sublayer B2 comprises exactly one TADF material E Band exactly one phosphorescent material P B In a preferred embodiment, the sublayers B1 and B2 are (directly) adjacent to each other, i.e., are (directly) in contact with each other.

[0058] It is also understood that an organic electroluminescent device according to the present invention may optionally comprise one or more emissive layers that do not fulfill the requirements given for emissive layer B in the context of the present invention. That is, an organic electroluminescent device according to the present invention may comprise at least one emissive layer B as defined herein, and may optionally comprise one or more further emissive layers to which the requirements given herein for emissive layer B do not necessarily apply. In another embodiment of the present invention, at least one, but not all, of the emissive layers comprised in an organic electroluminescent device according to the present invention is an emissive layer B as defined in a specific embodiment of the present invention.

[0059] In a preferred embodiment of the present invention, each light-emitting layer included in the organic electroluminescent device according to the present invention is a light-emitting layer B as defined in the specific embodiment of the present invention.

[0060] Composition of the light-emitting layer (EML) B (at least one) host material H B , (at least one) phosphorescent material P B and (at least one) small half-width emitter S B is contained in the organic electroluminescence device in any amount and in any ratio.

[0061] In a preferred embodiment, the (at least one) host material H B , (at least one) phosphorescent material P B , (at least one) thermally activated delayed fluorescence (TADF) material E B and (at least one) small FWHM emitter S B is contained in the organic electroluminescence device in any amount and in any ratio.

[0062] In a preferred embodiment of the invention, the electroluminescent device according to the invention comprises at least one light-emitting layer B consisting of one or more sublayers, wherein each of the at least one sublayer contains (at least one) host material H B (More specifically, H P and / or H N and / or H BP ) with (at least one) small FWHM emitter S B Contains more.

[0063] In a preferred embodiment of the invention, the electroluminescent device according to the invention comprises at least one light-emitting layer B consisting of one or more sublayers, wherein each of the at least one sublayer contains (at least one) host material H B (More specifically, H P and / or H N and / or H BP ) with (at least one) phosphorescent material P B Contains more.

[0064] In a preferred embodiment of the invention, the electroluminescent device according to the invention comprises at least one light-emitting layer B consisting of one or more sublayers, wherein each of the at least one sublayer contains (at least one) host material H B (More specifically, H P and / or H N and / or H BP ) with (at least one) TADF material E B Contains more.

[0065] In a preferred embodiment of the present invention, each of the at least one emitting layer B of the organic electroluminescent device according to the present invention contains at least one TADF material E B at least one small FWHM emitter S B Contains more.

[0066] In a preferred embodiment, in the organic electroluminescent device according to the invention, at least one light-emitting layer B (which may consist of one (sub)layer or may comprise one or more sublayers) comprises (or consists of) as a whole: (i) 30 to 99.8 wt. % of one or more host materials H B , (ii) 0.1 to 30 wt. % of one or more phosphorescent materials P B , (iii) 0.1 to 10 wt. % of small FWHM emitters S B , and selectively (v) 0 to 69.8 wt. % of one or more solvents.

[0067] In a preferred embodiment, in the organic electroluminescent device according to the invention, at least one light-emitting layer B (which may consist of one (sub)layer or may comprise one or more sublayers) comprises (or consists of) as a whole: (i) 30 to 99.8 wt %, preferably 60 to 99.8 wt %, of one or more host materials H B , (ii) 0.1 to 50% by weight, preferably 0.1 to 30% by weight, of one or more phosphorescent materials P B , (iii) 0.1 to 20 wt %, preferably 0.1 to 10 wt %, of one or more small FWHM emitters S B , and selectively (v) 0 to 3 wt. % of one or more solvents.

[0068] In a preferred embodiment, in the organic electroluminescent device according to the invention, at least one light-emitting layer B (which may consist of one (sub)layer or may comprise one or more sublayers) comprises (or consists of) as a whole: (i) 30 to 99.8 wt. % of one or more host materials H B , (ii) 0.1 to 20 wt. % of one or more phosphorescent materials P B , (iii) 0.1 to 10 wt. % of small FWHM emitters SB , and selectively (v) 0 to 69.8 wt. % of one or more solvents.

[0069] In a preferred embodiment, in the organic electroluminescent device according to the invention, at least one light-emitting layer B (which may consist of one (sub)layer or may comprise one or more sublayers) comprises (or consists of) as a whole: (i) 30 to 99.8 wt %, preferably 70 to 99.8 wt %, of one or more host materials H B , (ii) 0.1 to 20 wt. % of one or more phosphorescent materials P B , (iii) 0.1 to 50 wt %, preferably 0.1 to 10 wt %, of one or more small FWHM emitters S B , and selectively (v) 0 to 3 wt. % of one or more solvents.

[0070] E B In a preferred embodiment, in which the above is optional, in the organic electroluminescent device according to the invention, at least one light-emitting layer B (which may consist of one (sub)layer or may comprise one or more sublayers) comprises (or consists of) as a whole: (i) 30 to 99.8 wt. % of one or more host materials H B , (ii) 0.1 to 30 wt. % of one or more phosphorescent materials P B , (iii) 0.1 to 10 wt. % of small FWHM emitters S B , and selectively (iv) 0 to 69.8 wt % of one or more TADF materials E B , and selectively (v) 0 to 69.8 wt. % of one or more solvents.

[0071] E BIn a preferred embodiment, in which the above is optional, in the organic electroluminescent device according to the invention, at least one light-emitting layer B (which may consist of one (sub)layer or may comprise one or more sublayers) comprises (or consists of) as a whole: (i) 30 to 99.8 wt. % of one or more host materials H B , (ii) 0.1 to 30 wt. % of one or more phosphorescent materials P B , (iii) 0.1 to 10 wt. % of small FWHM emitters S B , and selectively (iv) 0 to 69.8 wt % of one or more TADF materials E B , and selectively (v) 0 to 3 wt. % of one or more solvents.

[0072] E B In a preferred embodiment, in which the above is optional, in the organic electroluminescent device according to the invention, at least one light-emitting layer B (which may consist of one (sub)layer or may comprise one or more sublayers) comprises (or consists of) as a whole: (i) 30 to 99.8 wt. % of one or more host materials H B , (ii) 0.1 to 20 wt. % of one or more phosphorescent materials P B , (iii) 0.1 to 10 wt. % of small FWHM emitters S B , and selectively (iv) 0 to 69.8 wt % of one or more TADF materials E B , and selectively (v) 0 to 69.8 wt. % of one or more solvents.

[0073] E B In a preferred embodiment, in which the above is optional, in the organic electroluminescent device according to the invention, at least one light-emitting layer B (which may consist of one (sub)layer or may comprise one or more sublayers) comprises (or consists of) as a whole: (i) 30 to 99.8 wt. % of one or more host materials HB , (ii) 0.1 to 20 wt. % of one or more phosphorescent materials P B , (iii) 0.1 to 10 wt. % of small FWHM emitters S B , and selectively (iv) 0 to 69.8 wt % of one or more TADF materials E B , and selectively (v) 0 to 3 wt. % of one or more solvents.

[0074] E B In a more preferred embodiment, in which the above is optional, in the organic electroluminescent device according to the present invention, at least one light-emitting layer B (which may consist of one (sub)layer or may comprise one or more sublayers) comprises (or consists of) as a whole: (i) 30 to 87.8 wt. % of one or more host materials H B , (ii) 0.1 to 30 wt. % of one or more phosphorescent materials P B , (iii) 0.1 to 10 wt. % of small FWHM emitters S B , (iv) 12 to 40 wt % of one or more TADF materials E B , and selectively (v) 0 to 57.8 wt. % of one or more solvents.

[0075] E B In a more preferred embodiment, in which the above is optional, in the organic electroluminescent device according to the present invention, at least one light-emitting layer B (which may consist of one (sub)layer or may comprise one or more sublayers) comprises (or consists of) as a whole: (i) 30 to 87.8 wt. % of one or more host materials H B , (ii) 0.1 to 30 wt. % of one or more phosphorescent materials P B , (iii) 0.1 to 10 wt. % of small FWHM emitters S B , (iv) 12 to 40 wt % of one or more TADF materials EB , and selectively (v) 0 to 3 wt. % of one or more solvents.

[0076] E B In a more preferred embodiment, in which the above is optional, in the organic electroluminescent device according to the present invention, at least one light-emitting layer B (which may consist of one (sub)layer or may comprise one or more sublayers) comprises (or consists of) as a whole: (i) 30 to 87.8 wt. % of one or more host materials H B , (ii) 0.1 to 20 wt. % of one or more phosphorescent materials P B , (iii) 0.1 to 10 wt. % of small FWHM emitters S B , (iv) 12 to 40 wt % of one or more TADF materials E B , and selectively (v) 0 to 57.8 wt. % of one or more solvents.

[0077] E B In a preferred embodiment, in which the above is optional, in the organic electroluminescent device according to the invention, at least one light-emitting layer B (which may consist of one (sub)layer or may comprise one or more sublayers) comprises (or consists of) as a whole: (i) 30 to 87.8 wt. % of one or more host materials H B , (ii) 0.1 to 20 wt. % of one or more phosphorescent materials P B , (iii) 0.1 to 10 wt. % of small FWHM emitters S B , (iv) 12 to 40 wt % of one or more TADF materials E B , and selectively (v) 0 to 3 wt. % of one or more solvents.

[0078] In one embodiment of the present invention, at least one, and preferably each, light-emitting layer B contains up to 5% by weight of one or more phosphorescent materials P B Includes.

[0079] In one embodiment of the present invention, the organic electroluminescent device comprises at least one light-emitting layer B comprising: (i) The lowest excited singlet state energy level E(S1 H ) and the lowest excited triplet state energy level E(T1 H at least one host material H B , (ii) The lowest excited singlet state energy level E(S1 P ) and the lowest excited triplet state energy level E(T1 P ) at least one phosphorescent material P B , (iii) The lowest excited singlet state energy level E(S1 S ) and the lowest excited triplet state energy level E(T1 S ) and at least one small full width at half maximum (FWHM) emitter S emitting light having a full width at half maximum (FWHM) of 0.25 eV or less. B , and (iv) The lowest excited singlet state energy level E(S1 E ) and the lowest excited triplet state energy level E(T1 E At least one thermally activated delayed fluorescence (TADF) material E B , Here, the relationships expressed by the following equations (1) and (2) are applied: E(T1 H )>E(T1 P ) (1) E(T1 P )>E(S1 S ) (2) Preferably, each light-emitting layer B contains 5% by weight or less of one or more phosphorescent materials P B Includes.

[0080] In one embodiment of the present invention, at least one, and preferably each, light-emitting layer B comprises or consists of: (i) 30 to 96.8 wt. % of one or more host materials H B(Also, the host compound H B (also called) (ii) 0.1 to 5 wt. % of one or more phosphorescent materials P B , (iii) 0.1 to 10 wt. % of small FWHM emitters S B , (iv) 3 to 69.8 wt % of one or more TADF materials E B , and selectively (v) 0 to 66.8 wt. % of one or more solvents.

[0081] In one embodiment of the present invention, at least one, and preferably each, light-emitting layer B comprises or consists of: (i) 30 to 96.8 wt. % of one or more host materials H B (Also, the host compound H B (also called) (ii) 0.1 to 5 wt. % of one or more phosphorescent materials P B , (iii) 0.1 to 10 wt. % of small FWHM emitters S B , (iv) 3 to 69.8 wt % of one or more TADF materials E B , and selectively (v) 0 to 3 wt. % of one or more solvents.

[0082] In one embodiment of the present invention, at least one, and preferably each, light-emitting layer B comprises or consists of: (i) 30 to 89.8 wt. % of one or more host materials H B (Also, the host compound H B (also called) (ii) 0.1 to 5 wt. % of one or more phosphorescent materials P B , (iii) 0.1 to 10 wt. % of small FWHM emitters S B , (iv) 10 to 40 wt % of one or more TADF materials E B , and selectively (v) 0 to 59.8 wt. % of one or more solvents.

[0083] In one embodiment of the present invention, at least one, and preferably each, light-emitting layer B comprises or consists of: (i) 30 to 89.8 wt. % of one or more host materials H B (Also, the host compound H B (also called) (ii) 0.1 to 5 wt. % of one or more phosphorescent materials P B , (iii) 0.1 to 10 wt. % of small FWHM emitters S B , (iv) 10 to 52 wt % of one or more TADF materials E B , and selectively (v) 0 to 3 wt. % of one or more solvents.

[0084] In one embodiment of the present invention, at least one, and preferably each, light-emitting layer B comprises or consists of: (i) 30 to 96.8 wt. % of one or more host materials H B (Also, the host compound H B (also called) (ii) 0.1 to 5 wt. % of one or more phosphorescent materials P B , (iii) 0.1 to 5 wt. % of small FWHM emitters S B , (iv) 3 to 69.8 wt % of one or more TADF materials E B , and selectively (v) 0 to 66.8 wt. % of one or more solvents.

[0085] In one embodiment of the present invention, at least one, and preferably each, light-emitting layer B comprises or consists of: (i) 30 to 96.8 wt. % of one or more host materials H B (Also, the host compound H B (also called) (ii) 0.1 to 5 wt. % of one or more phosphorescent materials P B , (iii) 0.1 to 5 wt. % of small FWHM emitters S B , (iv) 3 to 69.8 wt % of one or more TADF materials E B , and selectively (v) 0 to 3 wt. % of one or more solvents.

[0086] In one embodiment of the present invention, at least one, and preferably each, light-emitting layer B comprises or consists of: (i) 30 to 87.8 wt. % of one or more host materials H B (Also, the host compound H B (also called) (ii) 0.1 to 5 wt. % of one or more phosphorescent materials P B , (iii) 0.1 to 5 wt. % of small FWHM emitters S B , (iv) 12 to 40 wt % of one or more TADF materials E B , and selectively (v) 0 to 57.8 wt. % of one or more solvents.

[0087] In one embodiment of the present invention, at least one, and preferably each, light-emitting layer B comprises or consists of: (i) 30 to 87.8 wt. % of one or more host materials H B (Also, the host compound H B (also called) (ii) 0.1 to 5 wt. % of one or more phosphorescent materials P B , (iii) 0.1 to 5 wt. % of small FWHM emitters S B , (iv) 12 to 57 wt % of one or more TADF materials E B , and selectively (v) 0 to 3 wt. % of one or more solvents.

[0088] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B contains 3% by weight or less of a phosphorescent material P B Includes.

[0089] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B contains 1% by weight or less of a phosphorescent material P B Includes.

[0090] In one embodiment of the present invention, at least one, preferably each, emissive layer B comprises 10-40 wt. % of one or more TADF materials E B Includes.

[0091] In one embodiment of the present invention, (at least one) small full width half maximum (FWHM) emitter S B (At least one) phosphorescent material P B Mass ratio to (S B :P B ) is ≧1.

[0092] In one embodiment of the present invention, at least one light-emitting layer B includes at least one small full width at half maximum (FWHM) emitter S B (At least one) phosphorescent material P B Mass ratio to (S B :P B ) is ≧1. In one embodiment of the present invention, in each light-emitting layer B, there is (at least one) small full width half maximum (FWHM) emitter S B (At least one) phosphorescent material P B Mass ratio to (S B :P B ) is ≧1.

[0093] In one embodiment of the present invention, (at least one) small full width half maximum (FWHM) emitter S B (At least one) phosphorescent material P B Mass ratio to (S B :P B ) is <1.

[0094] In one embodiment of the present invention, at least one light-emitting layer B includes at least one small full width at half maximum (FWHM) emitter S B (At least one) phosphorescent material PB Mass ratio to (S B :P B ) is <1. In one embodiment of the present invention, in each light-emitting layer B, there is (at least one) small full width half maximum (FWHM) emitter S B (At least one) phosphorescent material P B Mass ratio to (S B :P B ) is <1.

[0095] In one embodiment of the present invention, the mass ratio S B :P B is in the range of 1:1 to 30:1, 1.5:1 to 25:1, 2:1 to 20:1, 4:1 to 15:1, 5:1 to 12:1, or 10:1 to 11:1. For example, the mass ratio S B :P B is in the range of (approximately) 20:1, 15:1, 12:1, 10:1, 8:1, 5:1, 4:1, 2:1, 1.5:1 or 1:1.

[0096] In one embodiment of the present invention, (at least one) small full width half maximum (FWHM) emitter S B (At least one) phosphorescent material P B Mass ratio to (S B :P B ) is <1.

[0097] In one embodiment of the present invention, the mass ratio P B :S B is in the range of 1:1 to 30:1, 1.5:1 to 25:1, 2:1 to 20:1, 4:1 to 15:1, 5:1 to 12:1, or 10:1 to 11:1. For example, the mass ratio P B :S B is in the range of (approximately) 20:1, 15:1, 12:1, 10:1, 8:1, 5:1, 4:1, 2:1, 1.5:1 or 1:1.

[0098] As stated above, it is understood that the different sublayers of light-emitting layer B do not necessarily all comprise the same materials, or more preferably the same materials in the same proportions.

[0099] S1-T1-Energy related In one embodiment of the present invention, the relationships expressed by the following equations (1) and (2) apply: E(T1 H )>E(T1 P ) (1) E(T1 P )>E(S1 S ) (2) Therefore, each host material H B The lowest excited triplet state T1 H is the phosphorescent material P B The lowest excited triplet state T1 P The higher the energy, the more phosphorescent the material P B The lowest excited triplet state T1 P is the FWHM of each small emitter S B The lowest excited singlet state S1 S Higher energy.

[0100] In one embodiment, the above relationships represented by formulas (1) and (2) apply to materials contained in the same light-emitting layer B of an organic electroluminescent device according to the present invention.

[0101] An organic electroluminescent device comprising at least one light-emitting layer B comprises: (i) The lowest excited singlet state energy level E(S1 H ) and the lowest excited triplet state energy level E(T1 H at least one host material H B , (ii) The lowest excited singlet state energy level E(S1 P ) and the lowest excited triplet state energy level E(T1 P ) at least one phosphorescent material P B , (iii) The lowest excited singlet state energy level E(S1S ) and the lowest excited triplet state energy level E(T1 S ) and at least one small full width at half maximum (FWHM) emitter S emitting light having a full width at half maximum (FWHM) of 0.25 eV or less. B , and (iv) The lowest excited singlet state energy level E(S1 E ) and the lowest excited triplet state energy level E(T1 E At least one thermally activated delayed fluorescence (TADF) material E B , Here, the relationships expressed by the following equations (1) and (2) apply: E(T1 H )>E(T1 P ) (1) E(T1 P )>E(S1 S ) (2).

[0102] In one embodiment, the above relationships represented by formulas (1) and (2) apply to the materials contained in any one of the at least one light-emitting layer B of the organic electroluminescent device according to the present invention.

[0103] In a preferred embodiment of the present invention, the relationships expressed by the following equations (3) and (4) apply: E(T1 H )>E(T1 E ) (3) E(T1 E )>E(T1 P ) (4) Therefore, each host material H B The lowest excited triplet state T1 H is the value of each TADF material E B The lowest excited triplet state T1 E Each TADF material has higher energy B The lowest excited triplet state T1 E is the phosphorescent material P B The lowest excited triplet state T1 P Higher energy.

[0104] In one embodiment, the aforementioned relationships represented by formulas (3) and (4) apply to materials contained in any one of at least one light-emitting layer B of an organic electroluminescent device according to the present invention. In one embodiment, the aforementioned relationships represented by formulas (3) and (4) apply to materials contained in the same light-emitting layer B of an organic electroluminescent device according to the present invention.

[0105] In an alternative embodiment of the present invention, the relationships expressed in the following equations (5) and (6) apply: E(T1 P )>E(T1 E ) (5) E(S1 E )>E(S1 S ) (6) Therefore, each phosphorescent material P B The lowest excited triplet state T1 P is the value of each TADF material E B The lowest excited triplet state T1 E Each TADF material has higher energy B The lowest excited triplet state S1 E is the FWHM of each small emitter S B The lowest excited singlet state S1 S Higher energy.

[0106] In one embodiment, the aforementioned relationships represented by formulas (5) and (6) apply to materials contained in any one of at least one light-emitting layer B of an organic electroluminescent device according to the present invention. In one embodiment, the aforementioned relationships represented by formulas (5) and (6) apply to materials contained in the same light-emitting layer B of an organic electroluminescent device according to the present invention.

[0107] In a preferred embodiment of the present invention, the relationships represented by the following equations (1) to (4) apply: E(T1 H )>E(T1 P ) (1) E(T1 P )>E(S1 S ) (2) E(T1 H )>E(S1 E ) (3) E(T1 E )>E(T1 P ) (4).

[0108] In one embodiment, the aforementioned relationships represented by formulas (1) to (4) apply to materials contained in any one of at least one light-emitting layer B of an organic electroluminescent device according to the present invention. In one embodiment, the aforementioned relationships represented by formulas (1) to (4) apply to materials contained in the same light-emitting layer B of an organic electroluminescent device according to the present invention.

[0109] In one embodiment of the present invention, each phosphorescent material P B The lowest excited triplet state T1 P and each TADF material E B The lowest excited triplet state T1 E The energy difference between these is less than 0.3 eV: E(T1 P )-E(T1 E )<0.3 eV and E(T1 E )-E(T1 P )<0.3 eV.

[0110] In one embodiment of the present invention, at least one of the one or more light-emitting layers B contains at least one, preferably each, phosphorescent material P B The lowest excited triplet state T1 P and at least one, preferably each, TADF material E B The lowest excited triplet state T1 E The energy difference between these is less than 0.3 eV: E(T1 P )-E(T1 E )<0.3 eV and E(T1 E )-E(T1 P )<0.3 eV.

[0111] In one embodiment of the present invention, in each of the one or more light-emitting layers B, at least one, preferably each, phosphorescent material PB The lowest excited triplet state T1 P and at least one, preferably each, TADF material E B The lowest excited triplet state T1 E The energy difference between these is less than 0.3 eV: E(T1 P )-E(T1 E )<0.3 eV and E(T1 E )-E(T1 P )<0.3 eV.

[0112] In one embodiment of the present invention, the relationship expressed by the following equation (4) applies: E(T1 E )>E(T1 P ) (4).

[0113] In one embodiment, the aforementioned relationship represented by formula (4) applies to materials contained in any one of at least one light-emitting layer B of an organic electroluminescent device according to the present invention. In one embodiment, the aforementioned relationship represented by formula (4) applies to materials contained in the same light-emitting layer B of an organic electroluminescent device according to the present invention.

[0114] In a preferred embodiment of the present invention, at least one, preferably each, TADF material E B The lowest excited triplet state T1 E and at least one, preferably each, phosphorescent material P B The lowest excited triplet state T1 P The energy difference between E(T1 E )-E(T1 P )<0.2 eV.

[0115] In a preferred embodiment of the present invention, at least one of the one or more light-emitting layers B contains at least one, preferably each, TADF material E B The lowest excited triplet state T1 E and at least one, preferably each, phosphorescent material P B The lowest excited triplet state T1 PThe energy difference between E(T1 E )-E(T1 P )<0.2 eV.

[0116] In a preferred embodiment of the present invention, in each of the one or more light-emitting layers B, at least one, preferably each TADF material E B The lowest excited triplet state T1 E and at least one, preferably each, phosphorescent material P B The lowest excited triplet state T1 P The energy difference between E(T1 E )-E(T1 P )<0.2 eV.

[0117] In a preferred embodiment of the present invention, at least one, preferably each, phosphorescent material P B The lowest excited triplet state T1 P and at least one, preferably each, small full width half maximum (FWHM) emitter S B The lowest excited triplet state S1 S (Energy level E(S1 S The energy difference between E(T1) and E(T2) is less than 0.3 eV. P )-E(S1 S )<0.3 eV.

[0118] In a preferred embodiment of the present invention, at least one of the one or more light-emitting layers B contains at least one, preferably each, phosphorescent material P B The lowest excited triplet state T1 P and at least one, preferably each, small full width half maximum (FWHM) emitter S B The lowest excited singlet state S1 S The energy difference between E(T1 P )-E(S1 S )<0.3 eV.

[0119] In a preferred embodiment of the present invention, in each of the one or more light-emitting layers B, at least one, preferably each, phosphorescent material PB The lowest excited triplet state T1 P and at least one, preferably each, small full width half maximum (FWHM) emitter S B The lowest excited singlet state S1 S The energy difference between E(T1 P )-E(S1 S )<0.3 eV.

[0120] In a preferred embodiment of the present invention, each phosphorescent material P B The lowest excited triplet state T1 P and the small full width at half maximum (FWHM) of each emitter S B The lowest excited singlet state S1 S (Energy level E(S1 S The energy difference between E(T1) and E(T2) is less than 0.2 eV. P )-E(S1 S )<0.2 eV.

[0121] In a preferred embodiment of the present invention, at least one of the one or more light-emitting layers B contains at least one, preferably each, phosphorescent material P B The lowest excited triplet state T1 P and at least one, preferably each, small full width half maximum (FWHM) emitter S B The lowest excited singlet state S1 S The energy difference between E(T1 P )-E(S1 S )<0.2 eV.

[0122] In a preferred embodiment of the present invention, in each of the one or more light-emitting layers B, at least one, preferably each, phosphorescent material P B The lowest excited triplet state T1 P and at least one, preferably each, small full width half maximum (FWHM) emitter S B The lowest excited singlet state S1 S The energy difference between E(T1 P )-E(S1 S )<0.2 eV.

[0123] HOMO-LUMO energy In a preferred embodiment of the present invention, the following requirements are met: (i) each host material H B is the energy E HOMO (H B ) with the highest occupied molecular orbital HOMO (H B ) and (ii) each phosphorescent material P B is the energy E HOMO (P B ) with the highest occupied molecular orbital HOMO (P B ) and (iii) Each small full width at half maximum (FWHM) emitter S B is the energy E HOMO (S B ) with the highest occupied molecular orbital HOMO(S B ) and Here, the relationships expressed by the following equations (10) and (11) apply: E HOMO (P B )>E HOMO (H B ) (10) E HOMO (P B )>E HOMO (S B ) (11).

[0124] In one embodiment, the aforementioned relationships represented by formulas (10) and (11) apply to materials contained in any one of at least one light-emitting layer B of an organic electroluminescent device according to the present invention. In one embodiment, the aforementioned relationships represented by formulas (10) and (11) apply to materials contained in the same light-emitting layer B of an organic electroluminescent device according to the present invention.

[0125] In one embodiment of the present invention, the energy E HOMO (S B ) each with a small full width at half maximum (FWHM) emitter S B The highest occupied orbital HOMO(S B) is the energy E HOMO (H B ) each host material H B The highest occupied molecular orbital HOMO (H B ) is even more energetic: E HOMO (S B )>E HOMO (H B ).

[0126] In one embodiment of the present invention, in at least one layer of the one or more light-emitting layers B, HOMO (S B ) at least one, preferably each, small full width at half maximum (FWHM) emitter S B The highest occupied orbital HOMO(S B ) is the energy E HOMO (H B ) at least one, preferably each, host material H B The highest occupied molecular orbital HOMO (H B ) is even more energetic: E HOMO (S B )>E HOMO (H B ).

[0127] In one embodiment of the present invention, in each of at least one light-emitting layer B, energy E HOMO (S B ) at least one, preferably each, small full width at half maximum (FWHM) emitter S B The highest occupied orbital HOMO(S B ) is the energy E HOMO (H B ) at least one, preferably each, host material H B The highest occupied molecular orbital HOMO (H B ) is even more energetic: E HOMO (S B )>E HOMO (H B ).

[0128] In one embodiment of the present invention, the energy E HOMO (S B ) each with a small full width at half maximum (FWHM) emitter S B The highest occupied orbital HOMO(S B ) is the energy E HOMO (E B ) each TADF material E B The highest occupied molecular orbital HOMO (E B ) is even more energetic: E HOMO (S B )>E HOMO (E B ).

[0129] In one embodiment of the present invention, in at least one layer of the one or more light-emitting layers B, HOMO (S B ) at least one, preferably each, small full width at half maximum (FWHM) emitter S B The highest occupied orbital HOMO(S B ) is the energy E HOMO (E B At least one, preferably each, TADF material E B The highest occupied molecular orbital HOMO (E B ) is even more energetic: E HOMO (S B )>E HOMO (E B ).

[0130] In one embodiment of the present invention, in each of at least one light-emitting layer B, energy E HOMO (S B ) at least one, preferably each, small full width at half maximum (FWHM) emitter S B The highest occupied orbital HOMO(S B ) is the energy E HOMO (E B At least one, preferably each, TADF material E B The highest occupied molecular orbital HOMO (E B ) is even more energetic: E HOMO (S B )>E HOMO (E B ).

[0131] In one embodiment of the present invention, the energy E HOMO (P B At least one, preferably each, phosphorescent material P B The highest occupied orbital HOMO(P B ) is the energy E HOMO (E B At least one, preferably each, TADF material E B The highest occupied molecular orbital HOMO (E B ) is even more energetic: E HOMO (P B )>E HOMO (E B ).

[0132] In one embodiment of the present invention, in at least one layer of the one or more light-emitting layers B, HOMO (P B At least one, preferably each, phosphorescent material P B The highest occupied orbital HOMO(P B ) is the energy E HOMO (E B At least one, preferably each, TADF material E B The highest occupied molecular orbital HOMO (E B ) is even more energetic: E HOMO (P B )>E HOMO (E B ).

[0133] In one embodiment of the present invention, in each of at least one light-emitting layer B, energy E HOMO (P B At least one, preferably each, phosphorescent material P B The highest occupied orbital HOMO(P B ) is the energy E HOMO (EB At least one, preferably each, TADF material E B The highest occupied molecular orbital HOMO (E B ) is even more energetic: E HOMO (P B )>E HOMO (E B ).

[0134] In one embodiment of the present invention, the energy E HOMO (P B At least one, preferably each, phosphorescent material P B The highest occupied orbital HOMO(P B ) is the energy E HOMO (H B ) at least one, preferably each, host material H B The highest occupied molecular orbital HOMO (H B ) is even more energetic: E HOMO (P B )>E HOMO (H B ).

[0135] In one embodiment of the present invention, in at least one layer of the one or more light-emitting layers B, HOMO (P B At least one, preferably each, phosphorescent material P B The highest occupied orbital HOMO(P B ) is the energy E HOMO (H B ) at least one, preferably each, host material H B The highest occupied molecular orbital HOMO (H B ) is even more energetic: E HOMO (P B )>E HOMO (H B ).

[0136] In one embodiment of the present invention, in each of at least one light-emitting layer B, energy E HOMO (PB At least one, preferably each, phosphorescent material P B The highest occupied orbital HOMO(P B ) is the energy E HOMO (H B ) at least one, preferably each, host material H B The highest occupied molecular orbital HOMO (H B ) is even more energetic: E HOMO (P B )>E HOMO (H B ).

[0137] In one embodiment of the present invention, the energy E HOMO (P B At least one, preferably each, phosphorescent material P B The highest occupied orbital HOMO(P B ) is the energy E HOMO (S B ) at least one, preferably each, small full width at half maximum (FWHM) emitter S B The highest occupied orbital HOMO(S B ) is even more energetic: E HOMO (P B )>E HOMO (S B ).

[0138] In one embodiment of the present invention, in at least one layer of the one or more light-emitting layers B, HOMO (P B At least one, preferably each, phosphorescent material P B The highest occupied orbital HOMO(P B ) is the energy E HOMO (S B ) at least one, preferably each, small full width at half maximum (FWHM) emitter S B The highest occupied orbital HOMO(S B ) is even more energetic: E HOMO (P B )>EHOMO (S B ).

[0139] In one embodiment of the present invention, in each of at least one light-emitting layer B, energy E HOMO (P B At least one, preferably each, phosphorescent material P B The highest occupied orbital HOMO(P B ) is the energy E HOMO (S B ) at least one, preferably each, small full width at half maximum (FWHM) emitter S B The highest occupied orbital HOMO(S B ) is even more energetic: E HOMO (P B )>E HOMO (S B ).

[0140] In one embodiment of the present invention, at least one, preferably each energy E HOMO (P B ) a phosphorescent material P B The highest occupied orbital HOMO(P B ) and at least one, preferably each, energy E HOMO (S B ) with a small full width at half maximum (FWHM) emitter S B The highest occupied orbital HOMO(S B ) is less than 0.3 eV: E HOMO (P B )-E HOMO (S B )<0.3 eV.

[0141] In one embodiment of the present invention, in at least one layer of the one or more light-emitting layers B, HOMO (P B At least one, preferably each, phosphorescent material P B The highest occupied orbital HOMO(P B ) and energy E HOMO (SB ) at least one, preferably each, small full width at half maximum (FWHM) emitter S B The highest occupied orbital HOMO(S B ) has an energy difference of less than 0.3 eV: E HOMO (P B )-E HOMO (S B )<0.3 eV.

[0142] In one embodiment of the present invention, in each of the one or more light-emitting layers B, the energy E HOMO (P B At least one, preferably each, phosphorescent material P B The highest occupied orbital HOMO(P B ) and energy E HOMO (S B ) at least one, preferably each, small full width at half maximum (FWHM) emitter S B The highest occupied orbital HOMO(S B ) has an energy difference of less than 0.3 eV: E HOMO (P B )-E HOMO (S B )<0.3 eV.

[0143] In one embodiment of the present invention, the energy E HOMO (P B ) each phosphorescent material P B The highest occupied orbital HOMO(P B ) and energy E HOMO (S B ) each with a small full width at half maximum (FWHM) emitter S B The highest occupied orbital HOMO(S B ) is less than 0.2 eV: E HOMO (P B )-E HOMO (S B )<0.2 eV.

[0144] In one embodiment of the present invention, in at least one layer of the one or more light-emitting layers B, HOMO (P B At least one, preferably each, phosphorescent material P B The highest occupied orbital HOMO(P B ) and energy E HOMO (S B ) at least one, preferably each, small full width at half maximum (FWHM) emitter S B The highest occupied orbital HOMO(S B ) has an energy difference of less than 0.2 eV: E HOMO (P B )-E HOMO (S B )<0.2 eV.

[0145] In one embodiment of the present invention, in each of the one or more light-emitting layers B, the energy E HOMO (P B At least one, preferably each, phosphorescent material P B The highest occupied orbital HOMO(P B ) and energy E HOMO (S B ) at least one, preferably each, small full width at half maximum (FWHM) emitter S B The highest occupied orbital HOMO(S B ) has an energy difference of less than 0.2 eV: E HOMO (P B )-E HOMO (S B )<0.2 eV.

[0146] In a preferred embodiment of the present invention, the energy E HOMO (P B At least one, preferably each, phosphorescent material P B The highest occupied orbital HOMO(P B ) and energy E HOMO (S B ) at least one, preferably each, small full width at half maximum (FWHM) emitter S BThe highest occupied orbital HOMO(S B ) is greater than 0.0 eV and less than 0.3 eV: 0.0 eV <E HOMO (P B )-E HOMO (S B )<0.3 eV.

[0147] In a preferred embodiment of the present invention, in at least one of the one or more light-emitting layers B, HOMO (P B At least one, preferably each, phosphorescent material P B The highest occupied orbital HOMO(P B ) and energy E HOMO (S B ) at least one, preferably each, small full width at half maximum (FWHM) emitter S B The highest occupied orbital HOMO(S B ) is greater than 0.0 eV and less than 0.3 eV: 0.0 eV <E HOMO (P B )-E HOMO (S B )<0.3 eV.

[0148] In a preferred embodiment of the present invention, in each of the one or more light-emitting layers B, the energy E HOMO (P B At least one, preferably each, phosphorescent material P B The highest occupied orbital HOMO(P B ) and energy E HOMO (S B ) at least one, preferably each, small full width at half maximum (FWHM) emitter S B The highest occupied orbital HOMO(S B ) is greater than 0.0 eV and less than 0.3 eV: 0.0 eV <E HOMO (P B )-E HOMO (S B )<0.3 eV.

[0149] In a preferred embodiment of the present invention, the energy E HOMO (P B At least one, preferably each, phosphorescent material P B The highest occupied orbital HOMO(P B ) and energy E HOMO (S B ) at least one, preferably each, small full width at half maximum (FWHM) emitter S B The highest occupied orbital HOMO(S B ) is 0.1 eV or more and 0.8 eV or less: 0.1 eV ≤ E HOMO (P B )-E HOMO (S B ) ≤ 0.8 eV.

[0150] In a preferred embodiment of the present invention, in at least one of the one or more light-emitting layers B, HOMO (P B At least one, preferably each, phosphorescent material P B The highest occupied orbital HOMO(P B ) and energy E HOMO (S B ) at least one, preferably each, small full width at half maximum (FWHM) emitter S B The highest occupied orbital HOMO(S B ) has an energy difference of 0.1 eV or more and 0.8 eV or less: 0.1 eV ≤ E HOMO (P B )-E HOMO (S B ) ≤ 0.8 eV.

[0151] In a preferred embodiment of the present invention, in each of the one or more light-emitting layers B, the energy E HOMO (P B At least one, preferably each, phosphorescent material P B The highest occupied orbital HOMO(P B ) and energy E HOMO (SB ) at least one, preferably each, small full width at half maximum (FWHM) emitter S B The highest occupied orbital HOMO(S B ) has an energy difference of 0.1 eV or more and 0.8 eV or less: 0.1 eV ≤ E HOMO (P B )-E HOMO (S B ) ≤ 0.8 eV.

[0152] In a preferred embodiment of the present invention, the following requirements are met: (i) each host material H B is the energy E LUMO (H B ) with the lowest unoccupied molecular orbital LUMO (H B ) and (ii) each phosphorescent material P B is the energy E LUMO (P B ) with the lowest unoccupied molecular orbital LUMO (P B ) and (iii) Each small full width at half maximum (FWHM) emitter S B is the energy E LUMO (S B ) with the lowest unoccupied orbital LUMO (S B ) and (iv) Each thermally activated delayed fluorescence (TADF) material E B is the energy E LUMO (E B ) with the lowest unoccupied molecular orbital LUMO (E B ) and Here, the relationships expressed by the following equations (12) and (13) apply: E LUMO (E B ) <E LUMO (H B ) (12) E LUMO (E B ) <E LUMO (P B ) (13).

[0153] In one embodiment, the aforementioned relationships represented by formulas (12) and (13) apply to materials contained in any one of at least one light-emitting layer B of an organic electroluminescent device according to the present invention. In one embodiment, the aforementioned relationships represented by formulas (12) and (13) apply to materials contained in the same light-emitting layer B of an organic electroluminescent device according to the present invention.

[0154] In one embodiment of the present invention, the organic electroluminescent device comprises at least one light-emitting layer B consisting of one or more sublayers, wherein one or more sublayers of the light-emitting layer B comprise: (i) Energy E LUMO (H B ) with the lowest unoccupied molecular orbital LUMO (H B ) a host material H B , (ii) Energy E LUMO (P B ) with the lowest unoccupied molecular orbital LUMO (P B ) a phosphorescent material P B , (iii) Energy E LUMO (S B ) with the lowest unoccupied orbital LUMO (S B ) with a small full width at half maximum (FWHM) emitter S B , and (iv) Energy E LUMO (E B ) with the lowest unoccupied molecular orbital LUMO (E B ) thermally activated delayed fluorescence (TADF) material E B , Here, the relationships expressed by the following equations (12) to (14) apply: E LUMO (E B ) <E LUMO (H B ) (12) E LUMO (E B ) <E LUMO (P B ) (13) E LUMO (E B ) <E LUMO (SB ) (14).

[0155] In one embodiment, the aforementioned relationships represented by formulas (12) to (14) apply to materials contained in any one of at least one light-emitting layer B of an organic electroluminescent device according to the present invention. In one embodiment, the aforementioned relationships represented by formulas (12) to (14) apply to materials contained in the same light-emitting layer B of an organic electroluminescent device according to the present invention.

[0156] In one embodiment of the present invention, the relationships expressed by the following equations (10) to (13) apply: E HOMO (P B )>E HOMO (H B ) (10) E HOMO (P B )>E HOMO (S B ) (11) E LUMO (E B ) <E LUMO (H B ) (12) E LUMO (E B ) <E LUMO (P B ) (13).

[0157] In one embodiment, the aforementioned relationships represented by formulas (10) to (13) apply to materials contained in any one of at least one light-emitting layer B of an organic electroluminescent device according to the present invention. In one embodiment, the aforementioned relationships represented by formulas (10) to (13) apply to materials contained in the same light-emitting layer B of an organic electroluminescent device according to the present invention.

[0158] In one embodiment of the present invention, the relationships expressed by the following equations (10) to (14) apply: E HOMO (P B )>E HOMO (H B ) (10) EHOMO (P B )>E HOMO (S B ) (11) E LUMO (E B ) <E LUMO (H B ) (12) E LUMO (E B ) <E LUMO (P B ) (13) E LUMO (E B ) <E LUMO (S B ) (14).

[0159] In one embodiment, the aforementioned relationships represented by formulas (10) to (14) apply to materials contained in any one of at least one light-emitting layer B of an organic electroluminescent device according to the present invention. In one embodiment, the aforementioned relationships represented by formulas (10) to (14) apply to materials contained in the same light-emitting layer B of an organic electroluminescent device according to the present invention.

[0160] In one embodiment of the present invention, at least one, preferably each, energy E LUMO (S B ) with a small full width at half maximum (FWHM) emitter S B The lowest unoccupied orbital LUMO (S B ) is at least one, preferably each, energy E LUMO (E B ) TADF material E B The lowest unoccupied molecular orbital (LUMO) of B ) is even more energetic: E LUMO (S B )>E LUMO (E B ).

[0161] In one embodiment of the present invention, at least one of the one or more light-emitting layers B has at least one, preferably each, energy E LUMO (S B) with a small full width at half maximum (FWHM) emitter S B The lowest unoccupied orbital LUMO (S B ) is at least one, preferably each, energy E LUMO (E B ) TADF material E B The lowest unoccupied molecular orbital (LUMO) of B ) is even more energetic: E LUMO (S B )>E LUMO (E B ).

[0162] In one embodiment of the present invention, in each of at least one light-emitting layer B, at least one, preferably each, energy E LUMO (S B ) with a small full width at half maximum (FWHM) emitter S B The lowest unoccupied orbital LUMO (S B ) is at least one, preferably each, energy E LUMO (E B ) TADF material E B The lowest unoccupied molecular orbital (LUMO) of B ) is even more energetic: E LUMO (S B )>E LUMO (E B ).

[0163] In one embodiment of the present invention, at least one, preferably each, energy E LUMO (S B ) with a small full width at half maximum (FWHM) emitter S B The lowest unoccupied orbital LUMO (S B ) and at least one, preferably each, energy E LUMO (E B ) TADF material E B The lowest unoccupied molecular orbital (LUMO) of B ) has an energy difference of less than 0.3 eV: E LUMO (S B )-E LUMO (EB )<0.3 eV.

[0164] In one embodiment of the present invention, at least one of the one or more light-emitting layers B has at least one, preferably each, energy E LUMO (S B ) with a small full width at half maximum (FWHM) emitter S B The lowest unoccupied orbital LUMO (S B ) and at least one, preferably each, energy E LUMO (E B ) TADF material E B The lowest unoccupied molecular orbital (LUMO) of B ) has an energy difference of less than 0.3 eV: E LUMO (S B )-E LUMO (E B )<0.3 eV.

[0165] In one embodiment of the present invention, in each of at least one light-emitting layer B, at least one, preferably each, energy E LUMO (S B ) with a small full width at half maximum (FWHM) emitter S B The lowest unoccupied orbital LUMO (S B ) and at least one, preferably each, energy E LUMO (E B ) TADF material E B The lowest unoccupied molecular orbital (LUMO) of B ) has an energy difference of less than 0.3 eV: E LUMO (S B )-E LUMO (E B )<0.3 eV.

[0166] In one embodiment of the present invention, at least one, preferably each, energy E LUMO (S B ) with a small full width at half maximum (FWHM) emitter S B The lowest unoccupied orbital LUMO (S B) and at least one, preferably each, energy E LUMO (E B ) TADF material E B The lowest unoccupied molecular orbital (LUMO) of B ) is less than 0.2 eV: E LUMO (S B )-E LUMO (E B )<0.2 eV.

[0167] In one embodiment of the present invention, at least one of the one or more light-emitting layers B has at least one, preferably each, energy E LUMO (S B ) with a small full width at half maximum (FWHM) emitter S B The lowest unoccupied orbital LUMO (S B ) and at least one, preferably each, energy E LUMO (E B ) TADF material E B The lowest unoccupied molecular orbital (LUMO) of B ) has an energy difference of less than 0.2 eV: E LUMO (S B )-E LUMO (E B )<0.2 eV.

[0168] In one embodiment of the present invention, in each of at least one light-emitting layer B, at least one, preferably each, energy E LUMO (S B ) with a small full width at half maximum (FWHM) emitter S B The lowest unoccupied orbital LUMO (S B ) and at least one, preferably each, energy E LUMO (E B ) TADF material E B The lowest unoccupied molecular orbital (LUMO) of B ) has an energy difference of less than 0.2 eV: E LUMO (S B )-E LUMO (E B)<0.2 eV.

[0169] In one embodiment of the present invention, at least one, preferably each, energy E LUMO (S B ) with a small full width at half maximum (FWHM) emitter S B The lowest unoccupied orbital LUMO (S B ) and at least one, preferably each, energy E LUMO (E B ) TADF material E B The lowest unoccupied molecular orbital (LUMO) of B ) is greater than 0.0 eV and less than 0.3 eV: 0.0 eV <E LUMO (S B )-E LUMO (E B )<0.3 eV.

[0170] In one embodiment of the present invention, at least one of the one or more light-emitting layers B has at least one, preferably each, energy E LUMO (S B ) with a small full width at half maximum (FWHM) emitter S B The lowest unoccupied orbital LUMO (S B ) and at least one, preferably each, energy E LUMO (E B ) TADF material E B The lowest unoccupied molecular orbital (LUMO) of B ) is greater than 0.0 eV and less than 0.3 eV: 0.0 eV <E LUMO (S B )-E LUMO (E B )<0.3 eV.

[0171] In one embodiment of the present invention, in each of at least one light-emitting layer B, at least one, preferably each, energy E LUMO (S B ) with a small full width at half maximum (FWHM) emitter S B The lowest unoccupied orbital LUMO (SB ) and at least one, preferably each, energy E LUMO (E B ) TADF material E B The lowest unoccupied molecular orbital (LUMO) of B ) is greater than 0.0 eV and less than 0.3 eV: 0.0 eV <E LUMO (S B )-E LUMO (E B )<0.3 eV.

[0172] In one embodiment of the present invention, each energy E LUMO (P B ) a phosphorescent material P B The lowest unoccupied molecular orbital (LUMO) of B ) are the respective energies E LUMO (E B ) TADF material E B The lowest unoccupied molecular orbital (LUMO) of B ) is even more energetic: E LUMO (P B )>E LUMO (E B ).

[0173] In one embodiment of the present invention, at least one of the one or more light-emitting layers B has at least one, preferably each, energy E LUMO (P B ) a phosphorescent material P B The lowest unoccupied molecular orbital (LUMO) of B ) is at least one, preferably each, energy E LUMO (E B ) TADF material E B The lowest unoccupied molecular orbital (LUMO) of B ) is even more energetic: E LUMO (P B )>E LUMO (E B ).

[0174] In one embodiment of the present invention, in each of at least one light-emitting layer B, at least one, preferably each, energy E LUMO (P B ) a phosphorescent material P B The lowest unoccupied molecular orbital (LUMO) of B ) is at least one, preferably each, energy E LUMO (E B ) TADF material E B The lowest unoccupied molecular orbital (LUMO) of B ) is even more energetic: E LUMO (P B )>E LUMO (E B ).

[0175] In one embodiment of the present invention, each energy E LUMO (H B ) a host material H B The lowest unoccupied molecular orbital (LUMO) of B ) are the respective energies E LUMO (E B ) TADF material E B The lowest unoccupied molecular orbital (LUMO) of B ) is even more energetic: E LUMO (H B )>E LUMO (E B ).

[0176] In one embodiment of the present invention, at least one of the one or more light-emitting layers B has at least one, preferably each, energy E LUMO (H B ) a host material H B The lowest unoccupied molecular orbital (LUMO) of B ) is at least one, preferably each, energy E LUMO (E B ) TADF material E B The lowest unoccupied molecular orbital (LUMO) of B ) is even more energetic: E LUMO (H B)>E LUMO (E B ).

[0177] In one embodiment of the present invention, in each of at least one light-emitting layer B, at least one, preferably each, energy E LUMO (H B ) a host material H B The lowest unoccupied molecular orbital (LUMO) of B ) is at least one, preferably each, energy E LUMO (E B ) TADF material E B The lowest unoccupied molecular orbital (LUMO) of B ) is even more energetic: E LUMO (H B )>E LUMO (E B ).

[0178] Emission maxima relationship In one embodiment of the present invention, the relationships expressed in equations (16) and (17) apply: |E λmax (P B )-E λmax (S B )|<0.30eV (16) |E λmax (E B )-E λmax (S B )|<0.30 eV (17).

[0179] This means that the phosphorescent material P in the context of the present invention is given in electron volts (eV). B The maximum luminous energy E λmax (P B ) and the small FWHM emitter S in the context of the present invention given in electron volts (eV) B The maximum luminous energy E λmax (S B ) has an energy difference of less than 0.30 eV. And, the TADF material E in the context of the present invention given in electron volts (eV) B The maximum luminous energy Eλmax (E B ) and the small FWHM emitter S in the context of the present invention given in electron volts (eV) B The maximum luminous energy E λmax (S B ) has an energy difference of less than 0.30 eV.

[0180] In one embodiment, the aforementioned relationships represented by formulas (16) and (17) apply to materials contained in any one of at least one light-emitting layer B of an organic electroluminescent device according to the present invention. In one embodiment, the aforementioned relationships represented by formulas (16) and (17) apply to materials contained in the same light-emitting layer B of an organic electroluminescent device according to the present invention.

[0181] The organic electroluminescent device comprises at least one light-emitting layer B consisting of one or more sublayers adjacent to one another and comprising overall: (i) at least one host material H B , (ii) Energy E λmax (P B ) with an emission maximum λ max (P B ) at least one phosphorescent material P B , (iii) Energy E λmax (S B ) with an emission maximum λ max (S B ) and at least one small full width at half maximum (FWHM) emitter S emitting light having a full width at half maximum (FWHM) of 0.25 eV or less. B , and (iv) Energy E λmax (E B ) with an emission maximum λ max (E B At least one thermally activated delayed fluorescence (TADF) material E B , One or more sublayers located on the outer surface of the light-emitting layer B may contain a phosphorescent material P B , small FWHM emitter S Band TADF material E B and wherein the relationships expressed by the following equations (16) and (17) apply: |E λmax (P B )-E λmax (S B )|<0.30eV (16) |E λmax (E B )-E λmax (S B )|<0.30 eV (17).

[0182] In a preferred embodiment of the present invention, the relationships expressed in equations (18) and (19) apply: |E λmax (P B )-E λmax (S B )|<0.20eV (18) |E λmax (E B )-E λmax (S B )|<0.20 eV (19).

[0183] This means that the phosphorescent material P in the context of the present invention is given in electron volts (eV). B The maximum luminous energy E λmax (P B ) and the small FWHM emitter S in the context of the present invention given in electron volts (eV) B The maximum luminous energy E λmax (S B ) has an energy difference of less than 0.20 eV. And, the TADF material E in the context of the present invention given in electron volts (eV) B The maximum luminous energy E λmax (E B ) and the small FWHM emitter S in the context of the present invention given in electron volts (eV) B The maximum luminous energy E λmax (S B ) has an energy difference of less than 0.20 eV.

[0184] In one embodiment, the aforementioned relationships represented by formulas (18) and (19) apply to materials contained in any one of at least one light-emitting layer B of an organic electroluminescent device according to the present invention. In one embodiment, the aforementioned relationships represented by formulas (18) and (19) apply to materials contained in the same light-emitting layer B of an organic electroluminescent device according to the present invention.

[0185] One embodiment of the present invention relates to an organic electroluminescent device, which comprises: (ii) at least one phosphorescent material P B is the energy E λmax (P B ) with an emission maximum λ max (P B ) and (iii) at least one small full width at half maximum (FWHM) emitter S B is the energy E λmax (S B ) with an emission maximum λ max (S B ), where S B emits light having a full width at half maximum (FWHM) of 0.25 eV or less, (iv) at least one thermally activated delayed fluorescence (TADF) material E B is the energy E λmax (E B ) with an emission maximum λ max (E B ) and Here, equations (18) and (19) apply: |E λmax (P B )-E λmax (S B )|<0.20eV (18) |E λmax (E B )-E λmax (S B )|<0.20 eV (19).

[0186] In a more preferred embodiment of the present invention, the relationships expressed in equations (20) and (21) apply: |E λmax (P B )-E λmax (S B )|<0.1eV (20) |E λmax (E B )-E λmax (S B )|<0.10 eV (21).

[0187] This means that the phosphorescent material P in the context of the present invention is given in electron volts (eV). B The maximum luminous energy E λmax (P B ) and the small FWHM emitter S in the context of the present invention given in electron volts (eV) B The maximum luminous energy E λmax (S B ) has an energy difference of less than 0.10 eV. And the TADF material E in the context of the present invention given in electron volts (eV) B The maximum luminous energy E λmax (E B ) and the small FWHM emitter S in the context of the present invention given in electron volts (eV) B The maximum luminous energy E λmax (S B ) has an energy difference of less than 0.10 eV.

[0188] In one embodiment, the aforementioned relationships represented by formulas (20) and (21) apply to materials contained in any one of at least one light-emitting layer B of an organic electroluminescent device according to the present invention. In one embodiment, the aforementioned relationships represented by formulas (20) and (21) apply to materials contained in the same light-emitting layer B of an organic electroluminescent device according to the present invention.

[0189] In one embodiment of the present invention, the relationship expressed in equation (22) applies: E λmax (P B )>E λmax (S B ) (twenty two).

[0190] This is the photoluminescence of the phosphorescent material P in the context of the present invention given in electron volts (eV). B The maximum luminous energy E λmax (P B ) is the small FWHM emitter S in the context of the present invention given in electron volts (eV) B The maximum luminous energy E λmax (S B ) means it is higher.

[0191] In one embodiment, the aforementioned relationship represented by formula (22) applies to a material contained in any one of at least one light-emitting layer B of an organic electroluminescent device according to the present invention. In one embodiment, the aforementioned relationship represented by formula (22) applies to a material contained in the same light-emitting layer B of an organic electroluminescent device according to the present invention.

[0192] In one embodiment of the present invention, the relationship expressed in equation (22-a) applies: E λmax (E B )>E λmax (S B ) (22-a).

[0193] This is the energy of the TADF material E in the context of the present invention given in electron volts (eV). B The maximum luminous energy E λmax (E B ) is the small FWHM emitter S in the context of the present invention given in electron volts (eV) B The maximum luminous energy E λmax (S B ) means it is higher.

[0194] In one embodiment, the aforementioned relationship represented by formula (22-a) applies to a material contained in at least one emitting layer B of an organic electroluminescent device according to the present invention. In one embodiment, the aforementioned relationship represented by formula (22-a) applies to a material contained in the same emitting layer B of an organic electroluminescent device according to the present invention.

[0195] Device color and performance A further embodiment of the present invention relates to an electroluminescent device (e.g., OLED) that emits light at a well-defined color point. According to the present invention, the electroluminescent device (e.g., OLED) emits light with a narrow emission band (small full width at half maximum (FWHM)). In a preferred embodiment, the electroluminescent device (e.g., OLED) according to the present invention emits light with a FWHM of the main emission peak of less than 0.25 eV, preferably less than 0.20 eV, more preferably less than 0.15 eV, or even more preferably less than 0.13 eV.

[0196] A further embodiment of the present invention is 2 (nit) of greater than 10%, preferably greater than 13%, more preferably greater than 15%, even more preferably greater than 18%, or even more preferably greater than 20%, and relates to an electroluminescent device (e.g., OLED) that exhibits an emission maximum between 500 nm and 560 nm.

[0197] A further embodiment of the present invention is 2 The present invention relates to an electroluminescent device (e.g., an OLED) that exhibits an external quantum efficiency of greater than 10%, preferably greater than 13%, more preferably greater than 15%, even more preferably greater than 18%, or even more preferably greater than 20%, and that exhibits an emission maximum between 510 nm and 550 nm.

[0198] A further embodiment of the present invention is 2The present invention relates to an electroluminescent device (e.g., an OLED) that exhibits an external quantum efficiency of greater than 10%, preferably greater than 13%, more preferably greater than 15%, even more preferably greater than 18%, or even more preferably greater than 20%, and that exhibits an emission maximum between 515 nm and 540 nm.

[0199] In a preferred embodiment, the electroluminescent device (e.g., OLED) is driven at a constant current density J = 15 mA / cm 2 exhibits an LT95 value of more than 100 hours, preferably more than 200 hours, more preferably more than 300 hours, even more preferably more than 400 hours, even more preferably more than 750 hours, or even more preferably more than 1000 hours.

[0200] A further embodiment of the present invention relates to an electroluminescent device (e.g., OLED) that emits light at a well-defined color point. According to the present invention, the electroluminescent device (e.g., OLED) emits light having a narrow emission band (small full width at half maximum (FWHM)). In a preferred embodiment, the electroluminescent device (e.g., OLED) according to the present invention emits light having an FWHM of the main emission peak of less than 0.25 eV, preferably less than 0.20 eV, more preferably less than 0.15 eV, or even more preferably less than 0.13 eV.

[0201] A further embodiment of the present invention relates to an electroluminescent device (e.g., an OLED) that emits light having CIEx and CIEy color coordinates close to the CIEx (=0.170) and CIEy (=0.797) color coordinates of primary green (CIEx=0.170 and CIEy=0.797) as defined by ITU-R Recommendation BT.2020 (Rec.2020), which is suitable for use in UHD (Ultra High Definition) displays, such as UHD-TVs. In this paragraph, the term "close" refers to the range of CIEx and CIEy coordinates provided at the end of this paragraph. While top-emitting devices (where the upper electrode is transparent) are typically used in commercial applications, the test device used throughout this invention represents a bottom-emitting device (where the lower electrode and substrate are transparent). Thus, a further aspect of the present invention relates to an electroluminescent device (e.g., an OLED) whose emission exhibits CIEx color coordinates of 0.15 to 0.45, preferably 0.15 to 0.35, more preferably 0.15 to 0.30, even more preferably 0.15 to 0.25, or even more preferably 0.15 to 0.20, and / or CIEy color coordinates of 0.60 to 0.92, preferably 0.65 to 0.90, more preferably 0.70 to 0.88, even more preferably 0.75 to 0.86, or even more preferably 0.79 to 0.84.

[0202] A further embodiment of the present invention relates to an OLED that emits light having CIEx and CIEy color coordinates close to the CIEx (=0.265) and CIEy (=0.65) color coordinates of primary green (CIEx=0.265 and CIEy=0.65) as defined in DCIP3. In this paragraph, the term "close" refers to the range of CIEx and CIEy coordinates provided at the end of this paragraph. While commercial applications typically use top-emitting devices (where the top electrode is transparent), the test devices used throughout this invention represent bottom-emitting devices (where the bottom electrode and substrate are transparent). A further aspect of the present invention relates to an OLED wherein the bottom emission exhibits CIEx color coordinates of 0.2 to 0.45, preferably 0.2 to 0.35, more preferably 0.2 to 0.30, even more preferably 0.24 to 0.28, or even more preferably 0.25 to 0.27, and / or CIEy color coordinates of 0.60 to 0.9, preferably 0.6 to 0.8, more preferably 0.60 to 0.70, even more preferably 0.62 to 0.68, or even more preferably 0.64 to 0.66.

[0203] A further embodiment of the present invention is 2 The present invention relates to an electroluminescent device (e.g., an OLED) that exhibits an external quantum efficiency of greater than 10%, preferably greater than 13%, more preferably greater than 15%, even more preferably greater than 18%, or even more preferably greater than 20%, and that exhibits an emission maximum between 420 nm and 500 nm.

[0204] A further embodiment of the present invention is 2 The present invention relates to an electroluminescent device (e.g., an OLED) that exhibits an external quantum efficiency of greater than 10%, preferably greater than 13%, more preferably greater than 15%, even more preferably greater than 18%, or even more preferably greater than 20%, and that exhibits an emission maximum between 440 nm and 480 nm.

[0205] A further embodiment of the present invention is 2The present invention relates to an electroluminescent device (e.g., an OLED) that exhibits an external quantum efficiency of greater than 10%, preferably greater than 13%, more preferably greater than 15%, even more preferably greater than 18%, or even more preferably greater than 20%, and that exhibits an emission maximum at 450 nm to 470 nm.

[0206] A further embodiment of the present invention is 2 and / or an external quantum efficiency of greater than 10%, preferably greater than 13%, more preferably greater than 15%, even more preferably greater than 18%, or even more preferably greater than 20%, and an emission maximum between 420 nm and 500 nm, preferably between 430 nm and 490 nm, more preferably between 440 nm and 480 nm, even more preferably between 450 nm and 470 nm; and / or an emission maximum of 500 cd / m 2 The present invention relates to an electroluminescent device (e.g., OLED) that exhibits an LT80 value of more than 100 h, preferably more than 200 h, more preferably more than 400 h, even more preferably more than 750 h, or even more preferably more than 1000 h.

[0207] A further embodiment of the present invention relates to an electroluminescent device (e.g., OLED) that emits light at a well-defined color point. According to the present invention, the electroluminescent device (e.g., OLED) emits light having a narrow emission band (small full width at half maximum (FWHM)). In a preferred embodiment, the electroluminescent device (e.g., OLED) according to the present invention emits light having an FWHM of the main emission peak of less than 0.25 eV, preferably less than 0.20 eV, more preferably less than 0.15 eV, or even more preferably less than 0.13 eV.

[0208] A further embodiment of the present invention relates to an electroluminescent device (e.g., an OLED) that emits light having CIEx and CIEy color coordinates close to the CIEx (=0.131) and CIEy (=0.046) color coordinates of primary blue (CIEx=0.131 and CIEy=0.046) as defined by ITU-R Recommendation BT.2020 (Rec.2020), which is suitable for use in UHD displays, e.g., UHD-TVs. In this paragraph, the term "close" refers to the range of CIEx and CIEy coordinates provided at the end of this paragraph. While commercial applications typically use top-emitting devices (where the upper electrode is transparent), the test device used throughout this invention represents a bottom-emitting device (where the lower electrode and substrate are transparent). The CIEy color coordinates of the blue element decrease by up to two times when changing from a bottom-emitting element to a top-emitting element, but the CIEx remains almost unchanged (Okinaka et al., Society for Information Display International Symposium Digest of Technical Papers, 2015, 46(1): 312-313, DOI:10.1002 / sdtp.10480). Thus, a further aspect of the present invention relates to an OLED whose emission exhibits CIEx color coordinates of 0.02 to 0.30, preferably 0.03 to 0.25, more preferably 0.05 to 0.20, even more preferably 0.08 to 0.18, or even more preferably 0.10 to 0.15, and / or CIEy color coordinates of 0.00 to 0.45, preferably 0.01 to 0.30, more preferably 0.02 to 0.20, even more preferably 0.03 to 0.15, or even more preferably 0.04 to 0.10.

[0209] A further embodiment of the present invention is 2and / or an emission maximum between 590 nm and 690 nm, preferably between 610 nm and 665 nm, more preferably between 620 nm and 640 nm, and / or an external quantum efficiency of 500 cd / m 2 The present invention relates to electroluminescent devices (e.g., OLEDs) that exhibit an LT80 value of greater than 100 hours, preferably greater than 200 hours, more preferably greater than 400 hours, even more preferably greater than 750 hours, or even more preferably greater than 1000 hours. Accordingly, a further aspect of the present invention relates to OLEDs whose emission exhibits a CIEy color coordinate of greater than 0.25, preferably greater than 0.27, more preferably greater than 0.29, and even more preferably greater than 0.30.

[0210] A further embodiment of the present invention relates to an electroluminescent device (e.g., an OLED) that emits light having CIEx and CIEy color coordinates close to the CIEx (=0.708) and CIEy (=0.292) color coordinates of primary blue (CIEx=0.708 and CIEy=0.292) as defined by ITU-R Recommendation BT.2020 (Rec.2020), which is suitable for use in UHD displays, e.g., UHD-TVs. In this paragraph, the term "close" refers to the range of CIEx and CIEy coordinates provided at the end of this paragraph. While commercial applications typically use top-emitting devices (where the upper electrode is transparent), the test device used throughout this invention represents a bottom-emitting device (where the lower electrode and substrate are transparent). Thus, a further aspect of the present invention relates to an OLED whose emission exhibits CIEx color coordinates of 0.60 to 0.88, preferably 0.61 to 0.83, more preferably 0.63 to 0.78, even more preferably 0.66 to 0.76, or even more preferably 0.68 to 0.73, and / or CIEy color coordinates of 0.25 to 0.70, preferably 0.26 to 0.55, more preferably 0.27 to 0.45, even more preferably 0.28 to 0.40, or even more preferably 0.29 to 0.35.

[0211] Therefore, a further aspect of the present invention is a method for manufacturing a 14500 cd / m 2 and / or an electroluminescent device (e.g., OLED) that exhibits an external quantum efficiency of greater than 10%, preferably greater than 13%, more preferably greater than 15%, even more preferably greater than 17%, or even more preferably greater than 20% and / or an emission maximum in the range of 590 nm to 690 nm, preferably 610 nm to 665 nm, more preferably 620 nm to 640 nm.

[0212] One of the purposes of interest for organic electroluminescent devices is to generate light, and therefore the present invention also relates to a method of generating light in a desired wavelength range, comprising providing any organic electroluminescent device according to the present invention.

[0213] Thus, a further aspect of the present invention relates to a method for generating light in a desired wavelength range, comprising the steps of: (i) providing an organic electroluminescent device according to the present invention; and (ii) applying a current to the organic electroluminescence element;

[0214] A further aspect of the present invention relates to a method for fabricating an organic electroluminescent device by assembling the aforementioned elements. The present invention also relates to a method for producing green light, particularly by using the organic electroluminescent device.

[0215] A further aspect of the present invention relates to an organic electroluminescent device, in which (at least) one, preferably exactly one of the relationships represented by the following formulae (23) to (25) is applied to the materials contained in the same emitting layer B: 440nm<λ max (S B )<470nm (23) 510nm<λ max (S B )<550nm (24) 610nm<λ max (S B )<665nm (25) where λ max (S B ) at least one, preferably each small FWHM emitter S B is the emission maximum and is given in nanometers (nm).

[0216] In one embodiment of the present invention, at least one, preferably exactly one of the relationships represented by the following formulas (23) to (25) applies to the material contained in any one of the at least one light-emitting layer B of the organic electroluminescent device according to the present invention:

[0217] A further aspect of the present invention relates to a method of generating light comprising the steps of: (i) providing an organic electroluminescent device according to the present invention; and (ii) applying a current to the organic electroluminescence element;

[0218] A further aspect of the present invention relates to a method of generating light comprising the steps of: (i) providing an organic electroluminescent device according to the present invention; and (ii) applying a current to the organic electroluminescence device; wherein the method is for generating light in a wavelength range selected from one of the following wavelength ranges: (i) 510 nm to 550 nm, or (ii) 440 nm to 470 nm, or (iii) 610 nm to 665 nm.

[0219] Those skilled in the art will appreciate that at least one TADF material E B and at least one phosphorescent material P B It is understood that the TADF material E (see below) can be used as an emitter in an organic electroluminescent device. However, preferably, in an organic electroluminescent device according to the present invention, at least one TADF material E B and at least one phosphorescent material P BIn a preferred embodiment, when a voltage (and current) is applied, the organic electroluminescent device according to the present invention emits light, the light emitted being predominantly (i.e., more than 50%, preferably more than 60%, more preferably more than 70%, even more preferably more than 80%, or even more preferably more than 90%) from at least one small FWHM emitter S B As a result, the organic electroluminescent device according to the present invention preferably exhibits a narrow emission, represented by a small FWHM of the main emission peak of less than 0.25 eV, more preferably less than 0.20 eV, even more preferably less than 0.15 eV, or even more preferably less than 0.13 eV.

[0220] In a preferred embodiment of the present invention, the relationship expressed by the following equation (26) applies: JPEG0007828334000001.jpg1379 where, FWHM D means the full width at half maximum (FWHM) in electron volts (eV) of the main emission peak of the organic electroluminescent device according to the present invention, FWHM SB is FWHM D One or more host materials H used in the light-emitting layer (EML) of an organic electroluminescent device having a FWHM of B Smaller FWHM emitter S than 1 B 1 shows the FWHM in electron volts (eV) of the photoluminescence spectrum (fluorescence spectrum measured at room temperature, i.e., (approximately) 20°C) of the spin-coated film of SB The spin-coated film, where the FWHM is determined, preferably contains the same small FWHM emitter or emitter S in the same weight ratio as the light-emitting layer B of the organic electroluminescent device. B Includes.

[0221] For example, the light-emitting layer B may contain two small FWHM emitters S each having a concentration of 1 wt.%. BWhen the spin-coated film contains 1 wt. % each of two small FWHM emitters S B In this exemplary case, the matrix material of the spin-coated film may comprise up to 98% by weight of the spin-coated film. The matrix material of such a spin-coated film may comprise the host material H contained in the light-emitting layer B of the organic electroluminescent device. B In the above example, the light-emitting layer B may be a single host material H B However, if the light-emitting layer B contains two host materials H, then the host material is preferably also the only matrix material of the spin-coated film. B When the spin-coated film (containing two small FWHM emitters S at 1 wt. % each) contains two small FWHM emitters, one with a 60 wt. % content and the other with a 20 wt. % content (i.e., a 3:1 ratio), B The aforementioned matrix materials (including the two host materials H present in the EML) are preferably B It is also a 3:1 mixture of

[0222] When the organic electroluminescent device according to the present invention includes one or more emitting layers B, the relationship represented by the formula (26) preferably applies to all of the emitting layers B included in the device.

[0223] In one embodiment, for at least one light-emitting layer B of the organic electroluminescence device according to the present invention, the above-mentioned FWHM D :FWHM SB is not more than 1.50, preferably not more than 1.40, more preferably not more than 1.30, even more preferably not more than 1.20, or even more preferably not more than 1.10.

[0224] In one embodiment, for each light-emitting layer B of the organic electroluminescent device according to the present invention, D :FWHM SBis not more than 1.50, preferably not more than 1.40, more preferably not more than 1.30, even more preferably not more than 1.20, or even more preferably not more than 1.10.

[0225] In the context of the present invention, a small FWHM emitter S B For the selection of fluorescent emitters for use as , it should be noted that the FWHM values ​​are determined as described in the following section (for simplicity, from spin-coated films of the respective emitters in poly(methyl methacrylate) PMMA, preferably with a concentration of 1-5 wt%, especially 2 wt%, or from solutions, see below). That is, for the exemplary small FWHM emitters S shown in Table 1S. B is used in the context of equation (26) and the related preferred embodiments of the present invention. SB It is not understood as a value.

[0226] The examples and claims further describe the invention.

[0227] Host material H B According to the present invention, any one or more host materials H contained in any one or more light-emitting layers B B is a p-host H that exhibits high hole mobility. P , n-host H exhibiting high electron mobility N or an ambipolar host material H that exhibits both high hole and high electron mobility BP It is also.

[0228] In the context of the present invention, n-host H N is preferably −2.50 eV or less (E LUMO (H N )≦−2.50 eV), more preferably, E LUMO (H N )≦−2.60 eV, even more preferably, E LUMO (H N )≦−2.65 eV, more preferably E LUMO (H N) ≦-2.70 eV LUMO energy E LUMO (H N ) The LUMO is the lowest unoccupied molecular orbital. The energy of the LUMO is determined as described in the following section.

[0229] In the context of the present invention, a p-host H P is preferably -6.30 eV or more (E HOMO (H P ) ≥ -6.30 eV), more preferably, E HOMO (H P ) ≧−5.90 eV, even more preferably E HOMO (HP) ≧−5.70 eV, more preferably E HOMO (H P ) ≥ -5.40 eV, or more preferably, E HOMO (H P ) ≥ -2.60 eV HOMO energy E HOMO (H P ) The HOMO is the highest occupied molecular orbital. The HOMO energy is determined as described in the following section.

[0230] In one embodiment of the present invention, each host material H B is -6.30 eV or more (E HOMO (H P ) ≥ -6.30 eV), preferably E HOMO (H P ) ≧−5.90 eV, more preferably, E HOMO (H P ) ≧−5.70 eV, more preferably E HOMO (H P ) ≥ -5.40 eV HOMO energy E HOMO (H P ) with p-host H P The HOMO is the highest occupied molecular orbital. The HOMO energy is determined as described in the following section.

[0231] In one embodiment of the present invention, at least one, preferably each p-host H Pis the HOMO energy E smaller than -5.60 eV HOMO (H P )

[0232] In one embodiment of the present invention, the organic electroluminescent device comprises at least one light-emitting layer B consisting of one or more sublayers adjacent to one another and comprising collectively: (i) The lowest excited singlet state energy level E(S1 H ) and the lowest excited triplet state energy level E(T1 H at least one host material H B , (ii) The lowest excited singlet state energy level E(S1 P ) and the lowest excited triplet state energy level E(T1 P ) at least one phosphorescent material P B , (iii) The lowest excited singlet state energy level E(S1 S ) and the lowest excited triplet state energy level E(T1 S ) and at least one small full width at half maximum (FWHM) emitter S emitting light having a full width at half maximum (FWHM) of 0.25 eV or less. B , and selectively (iv) The lowest excited singlet state energy level E(S1 E ) and the lowest excited triplet state energy level E(T1 E At least one thermally activated delayed fluorescence (TADF) material E B , wherein one or more sublayers located on the outer surface of the light-emitting layer B contain a phosphorescent material P B , small FWHM emitter S B and TADF material E B at least one (emitter) material selected from the group consisting of where at least one host material H B is an energy E smaller than -5.60 eV HOMO (H B ) with the highest occupied molecular orbital HOMO (H B), and preferably each host material H B is an energy E smaller than -5.60 eV HOMO (H B ) with the highest occupied molecular orbital HOMO (H B )

[0233] In the context of the present invention, ambipolar hosts exhibiting high electron mobility preferably have an electron mobility of −2.50 eV or less (E LUMO (H BP )≦-2.50 eV) LUMO (H BP ). More preferably, E LUMO (H BP )≦−2.60 eV, and even more preferably, E LUMO (H BP )≦−2.65 eV, and more preferably, E LUMO (H BP )≦−2.70 eV. The LUMO is the lowest unoccupied molecular orbital. The LUMO energy is determined as described in the following section.

[0234] In the context of the present invention, an ambipolar host exhibiting high hole mobility preferably has a hole mobility of −6.30 eV or higher (E HOMO (H BP ) ≥ -6.30 eV), more preferably, E HOMO (H BP ) ≥ -5.90 eV HOMO energy E HOMO (H BP ). Even more preferably, E HOMO (H BP ) ≧−5.70 eV, and more preferably, E HOMO (H BP ) ≥ -5.40 eV. The HOMO is the highest occupied molecular orbital. The HOMO energy is determined as described in the following section.

[0235] In one embodiment of the present invention, the ambipolar host material H BP , preferably each bipolar host material H BP meets both of the following requirements: (i) -2.50 eV or less (E LUMO (H BP )≦-2.50 eV) LUMO energy E LUMO (H BP ) Preferably, E LUMO (H BP )≦−2.60 eV, and more preferably, E LUMO (H BP )≦−2.65 eV, and even more preferably, E LUMO (H BP )≦−2.70 eV. The LUMO is the lowest unoccupied molecular orbital. The LUMO energy is determined as described in the following section.

[0236] (ii) -6.30eV or more (E HOMO (H BP ) ≥ -6.30 eV), preferably E HOMO (H BP ) ≥ -5.90 eV HOMO energy E HOMO (H BP ). More preferably, E HOMO (H BP )≧−5.70 eV, and even more preferably, E HOMO (H BP ) ≥ -5.40 eV. The HOMO is the highest occupied molecular orbital. The HOMO energy is determined as described in the following section.

[0237] Those skilled in the art know what materials are suitable host materials for use in the organic electroluminescent device according to the present invention. See the following examples: Y.Tao, C.Yang, J.Quin, Chemical Society Reviews 2011, 40, 2943, DOI: 10.1039 / C0CS00160K; KSYook, JYLee, The Chemical Record 2015, 16(1), 159, DOI: 10.1002 / tcr.201500221; T.Chatterjee, K.-T.Wong, Advanced Optical Materials 2018, 7(1), 1800565, DOI: 10.1002 / adom.201800565; Q.Wang, Q.-S.Tian, ​​Y.-L.Zhang, X.Tang, L.-S.Liao, Journal of Materials Chemistry C2019, 7, 11329, DOI: 10.1039 / C9TC03092A.

[0238] Also, for example, US2006006365(A1), US2006208221(A1), US2005069729(A1), EP1205527(A1), US2009302752(A1), US20090134784(A1), US2009302742(A1), US2010187977(A 1), US2010187977(A1), US2012068170(A1), US2012097899(A1), US2006121308(A1) ), US2006121308(A1), US2009167166(A1), US2007176147(A1), US2015322091(A1) , US2011105778(A1), US2011201778(A1), US2011121274(A1), US2009302742(A1), US2010187977(A1), US2010244009(A1), US2009136779(A1), EP2182040(A2), US2012202997(A1), US2019393424(A1), US2019393425(A1), US2020168819(A1), US2020079762(A1) and US2012292576(A1) disclose host materials that can be used in the organic electroluminescent devices according to the present invention. It is understood that this does not mean that the present invention is limited to organic electroluminescent devices containing the host materials disclosed in the cited references. Also, any host material used in the state of the art can be considered as a suitable host material H in the context of the present invention. B It is understood that:

[0239] In one embodiment of the present invention, each light-emitting layer B of the organic electroluminescent device according to the present invention comprises one or more p-hosts H P In one embodiment of the present invention, each light-emitting layer B of the organic electroluminescent device according to the present invention comprises only a single host material, and the host material is a p-host H P is.

[0240] In one embodiment of the present invention, each light-emitting layer B of the organic electroluminescent device according to the present invention comprises one or more n-hosts HN In another embodiment of the present invention, each light-emitting layer B of the organic electroluminescent device according to the present invention comprises only a single host material, which is an n-host H N is.

[0241] In one embodiment of the present invention, each light-emitting layer B of the organic electroluminescent device according to the present invention contains one or more ambipolar hosts H BP In one embodiment of the present invention, each light-emitting layer B of the organic electroluminescent device according to the present invention comprises only a single host material, which is an ambipolar host H BP is.

[0242] In another embodiment of the present invention, at least one light-emitting layer B of the organic electroluminescent device according to the present invention comprises at least two different hosts. In this case, one or more host materials H present in each light-emitting layer B B are both p-host H P or n-host H N or both are bipolar host H BP But it's also a combination of those.

[0243] If the organic electroluminescent device according to the present invention comprises one or more light-emitting layers B, any one of them may be, independently of one or more other light-emitting layers B, a host material H to which the above definition applies. B or one or more host materials H B It is also understood that the different light-emitting layers B comprised in the organic electroluminescent device according to the present invention do not necessarily all comprise the same materials, or more preferably, do not comprise the same materials in the same concentrations.

[0244] If the light-emitting layer B of the organic electroluminescent device according to the invention is composed of one or more sublayers, any one of them may, independently of one or more other sublayers, contain one host material H to which the above definition applies. Bor one or more host materials H B It is also understood that the different sublayers of the light-emitting layer B contained in the organic electroluminescent device according to the present invention do not necessarily all contain the same materials, or more preferably the same materials in the same concentrations.

[0245] When contained in the same light-emitting layer B of the organic electroluminescent device according to the present invention, at least one p-host H P and at least one n-host H N can selectively form exciplexes. Those skilled in the art will appreciate that H P and H N How to select pairs of H P and H N Selection criteria are known, including HOMO- and / or LUMO-energy level requirements. That is, if exciplex formation is desired, the p-host material H P The highest occupied molecular orbital (HOMO) of the n-host material H N The energy is at least 0.20 eV higher than the HOMO of the p-host material H P The lowest unoccupied molecular orbital (LUMO) of the n-host material H N The energy is at least 0.20 eV higher than the LUMO of

[0246] In a preferred embodiment of the present invention, at least one host material H B (For example, H P , H N and / or H BP ) is an organic host material, which means in the context of the present invention that it does not contain any transition metal. In a preferred embodiment of the present invention, all host materials H B (H P , H N and / or H BP ) are organic host materials, which means in the context of the present invention that they do not contain any transition metals. Preferably, at least one host material HB , and more preferably, all the host materials H B (H P , H N and / or H BP ) is composed primarily of hydrogen (H), carbon (C), and nitrogen (N), but may also contain, for example, oxygen (O), boron (B), silicon (Si), fluorine (F), and bromine (Br).

[0247] In one embodiment of the present invention, each host material H B is the p-host H P is.

[0248] In a preferred embodiment of the present invention, a p-host H P comprises or consists of: Chemical formula H P -I, H P -II, H P -III, H P -IV, H P -V, H P -VI, H P -VII, H P -VIII, H P -IX and H P a first chemical moiety comprising or consisting of a structure according to any one of -X; [ka] ...Chemical formula H P -I [ka] ...Chemical formula H P -II [ka] ...Chemical formula H P -III [ka] ...Chemical formula H P -IV [ka] ...Chemical formula H P -V [ka] ...Chemical formula H P -VI [ka] ...Chemical formula H P -VII [ka] ...Chemical formula H P -VIII [ka] ...Chemical formula H P -IX [ka] ...Chemical formula H P -X

[0249] Each has the chemical formula H P -XI, H P -XII, H P -XIII, H P -XIV, H P -XV, H P -XVI, H P -XVII, H P -XVIII and H P -XIX, [ka] ...Chemical formula H P -XI [ka] ...Chemical formula H P -XII [ka] ...Chemical formula H P -XIII [ka] ...Chemical formula H P -XIV [ka] ...Chemical formula H P -XV [ka] ...Chemical formula H P -XVI [ka] ...Chemical formula H P -XVII [ka] ...Chemical formula H P -XVIII [ka] ...Chemical formula H P -XIX where p-host material H Pis linked to the first chemical moiety via a single bond represented by a dotted line in said chemical formula; where: Z 1 are in each case independently of one another a direct bond, C(R II )2, C=C(R II )2, C=O, C=NR II , N.R. II , O, Si(R II )2, S, S(O) and S(O)2; R I are, in each occurrence independently of each other, the attachment position of a single bond linking a first chemical moiety to a second chemical moiety, or are selected from the group consisting of: Hydrogen, deuterium, Me, i Pr, t Bu, and Me, i Pr, t Ph optionally substituted with one or more substituents independently selected from the group consisting of Bu and Ph; where at least one R I is the attachment position of the single bond connecting the first chemical moiety to the second chemical moiety; R II is selected from the group consisting of: Hydrogen, deuterium, Me, i Pr, t Bu, and Me, i Pr, t Ph optionally substituted with one or more substituents independently selected from the group consisting of Bu and Ph; where two or more adjacent substituents R II optionally forming an aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system, and having the chemical formula H P -XI, H P -XII, H P -XIII, H P -XIV, H P -XV, H P -XVI, H P -XVII, H P-XVIII and H P -XIX, and adjacent substituents R II The fused ring system, consisting of the additional ring optionally formed by, contains a total of 12 to 60 carbon atoms, preferably 14 to 32 carbon atoms.

[0250] In a more preferred embodiment of the present invention, Z 1 is in each case a direct bond and the adjacent substituent R II does not bond to form an additional ring system.

[0251] In a more preferred embodiment of the present invention, the p-host H P is selected from the group consisting of the following structures: [ka] [ka] [ka] [ka] [ka] [ka]

[0252] In a preferred embodiment of the present invention, the n-host H N is the chemical formula H N -I, H N -II and H N-III) or consisting of any one of the structures: [ka] ...Chemical formula H N -I [ka] ...Chemical formula H N -II [ka] ...Chemical formula H N -III where R III and R IV are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, Me, i Pr, t Bu, CN, CF3, Me, i Pr, t Ph optionally substituted with one or more substituents independently selected from the group consisting of Bu and Ph; Chemical formula H N -IV, H N -V, H N -VI, H N -VII, H N -VIII, H N -IX, H N -X, H N -XI, H N -XII, H N -XIII and H N -XIV, [ka] ...Chemical formula H N -IV [ka] ...Chemical formula H N -V [ka] ...Chemical formula H N -VI [ka] ...Chemical formula H N -VII [ka] ...Chemical formula H N -VIII [ka] ...Chemical formula H N -IX [ka] ...Chemical formula H N -X [ka] ...Chemical formula H N -XI [ka] ...Chemical formula H N -XII [ka] ...Chemical formula H N -XIII [ka] ...Chemical formula H N -XIV where: The dotted line represents the chemical formula H N -IV, H N -V, H N -VI, H N -VII, H N -VIII, H N -IX, HN-X, H N -XI, H N -XII, H N -XIII and H N -XIV N -I, H N -II and H N -III) and X 1 is oxygen (O), sulfur (S) or carbon (R V )2, R V are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, Me, i Pr, t Bu, and Me, i Pr, t Ph optionally substituted with one or more substituents independently selected from the group consisting of Bu and Ph; where two or more adjacent substituents R V optionally forming an aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system, and having the chemical formula H N -IV, H N -V, H N -VI, H N -VII, H N -VIII, H N -IX, H N -X, H N -XI, H N -XII, H N -XIII and H N -XIV, as well as adjacent substituents R V the fused ring system consisting of the additional ring optionally formed by where the chemical formula H N -I and H N In II, at least one substituent R III is CN.

[0253] In a more preferred embodiment of the present invention, the n-host H N is selected from the group consisting of the following structures: [ka] [ka] [ka]

[0254] In one embodiment of the present invention, the n-host H contained in any light-emitting layer B of the organic electroluminescent device according to the present invention N does not contain any phosphine oxide group, and in particular, n-host H N is not bis[2-(diphenylphosphino)phenyl]etheroxide (DPEPO).

[0255] TADF material E B According to the present invention, the thermally activated delayed fluorescence (TADF) material E B is the lowest excited singlet state energy level E(S1) of less than 0.4 eV, preferably less than 0.3 eV, more preferably less than 0.2 eV, even more preferably less than 0.1 eV, or even more preferably less than 0.05 eV. E ) and the lowest excited triplet state energy level E(T1 E ) corresponds to the energy difference ΔE ST Therefore, the TADF material E according to the present invention is characterized by exhibiting a value. B ΔE ST is the lowest excited triplet state T1 at room temperature (RT, i.e., (approximately) 20°C).E to the lowest excited singlet state S1 E is small enough to allow thermal repopulation (also called up-intersystem crossing or reverse intersystem crossing, RISC) of

[0256] Preferably, in the context of the present invention, the TADF material generates luminescent S1 by recombination of charge carriers (holes and electrons). E Immediate fluorescence when the T1 state is reached E state via heat-activated RISC to luminescent S1 E When the fluorescein-activated fluorescein state is reached, both delayed fluorescence and fluorescein-activated fluorescein are observed.

[0257] The small FWHM emitter S included in the light-emitting layer B of the organic electroluminescent device according to the present invention B selectively has a ΔE of less than 0.4 eV ST It is understood that the FWHM of any small emitter S may be 0.015 or 0.15, and exhibit thermally activated delayed fluorescence (TADF). However, in the context of the present invention, any small FWHM emitter S B whereas this is merely a selective feature.

[0258] In a preferred embodiment of the present invention, at least one TADF material E B and the emission spectrum of at least one small FWHM emitter S B In this case, there is a spectral overlap between the absorption spectrum of at least one TADF material E and that of the other TADF materials E (when both spectra are measured under similar conditions). B is at least one small FWHM emitter S B Energy can be transferred to

[0259] According to the present invention, the TADF material E B has an emission maximum in the visible wavelength range of 380 nm to 800 nm, and is typically found at room temperature (i.e., (approximately) 20° C.) in a 10 wt % TADF material E in poly(methyl methacrylate) PMMA. B It is measured in

[0260] In one embodiment of the present invention, each TADF material E B has an emission maximum in the deep blue wavelength range of 380 nm to 470 nm, preferably 400 nm to 470 nm, and is typically found in a 10 wt % TADF material E in poly(methyl methacrylate) PMMA at room temperature (i.e., (approximately) 20° C.). B It is measured in

[0261] In one embodiment of the present invention, each TADF material E B has an emission maximum in the green wavelength range of 480 nm to 560 nm, preferably 500 nm to 560 nm, and is typically found at room temperature (i.e., (approximately) 20° C.) in a 10 wt % TADF material E in poly(methyl methacrylate) PMMA. B It is measured in

[0262] In one embodiment of the present invention, each TADF material E B has an emission maximum in the red wavelength range of 600 nm to 665 nm, preferably 610 nm to 665 nm, and is typically found in a 10 wt % TADF material E in poly(methyl methacrylate) PMMA at room temperature (i.e., (approximately) 20° C.). B In a preferred embodiment of the present invention, the TADF material E B The emission maximum (peak emission) of a small FWHM emitter S in the context of the present invention B The emission maximum (peak emission) of the

[0263] In a preferred embodiment of the present invention, each TADF material E B is an organic TADF material, which means in the context of the present invention that it does not contain any transition metal. Preferably, each TADF material E according to the present invention B is composed primarily of hydrogen (H), carbon (C), and nitrogen (N), but may also contain, for example, oxygen (O), boron (B), silicon (Si), fluorine (F), and bromine (Br).

[0264] In a preferred embodiment of the present invention, each TADF material EB has a molecular weight of 800 g / mol or less.

[0265] In one embodiment of the present invention, the TADF emitter E B exhibits a photoluminescence quantum yield (PLQY) of 30% or more and is typically found at 10 wt% of TADF material E in poly(methyl methacrylate) PMMA at room temperature (i.e., approximately 20°C). B It is measured in

[0266] In one embodiment of the present invention, the TADF emitter E B exhibits a photoluminescence quantum yield (PLQY) of 50% or more and is typically found at 10 wt% of TADF material E in poly(methyl methacrylate) PMMA at room temperature (i.e., (approximately) 20°C). B It is measured in

[0267] In one embodiment of the present invention, the TADF emitter E B exhibits a photoluminescence quantum yield (PLQY) of 70% or more and is typically found at 10 wt% of TADF material E in poly(methyl methacrylate) PMMA at room temperature (i.e., approximately 20°C). B It is measured in

[0268] In one embodiment of the present invention, at least one, preferably each TADF material E B teeth, (i) The lowest excited singlet state energy level E(S1 E ) and the lowest excited triplet state energy level E(T1 E ) corresponds to the energy difference ΔE ST a value of less than 0.4 eV, (ii) exhibit a photoluminescence quantum yield (PLQY) greater than 30%;

[0269] In one embodiment of the present invention, each TADF material E B The lowest unoccupied molecular orbital (LUMO) of B ) energy E LUMO (E B) is less than -2.6 eV.

[0270] Those skilled in the art will appreciate that the TADF molecule E according to the present invention B We know how to design ΔE ST generally decreases, and in the context of the present invention, ΔE ST is smaller than 0.4 eV as mentioned above. This is because the HOMO and LUMO of the TADF molecule are often spatially separated by a large distance between the electron donor and acceptor groups, respectively. B This is achieved by designing the HOMO and LUMO groups. These groups are generally bulky or twisted and connected via spiro junctions, which reduces the spatial overlap of the HOMO and LUMO. However, minimizing the spatial overlap of the HOMO and LUMO groups has the disadvantage of also reducing the photoluminescence quantum yield (PLQY) of the TADF material. Therefore, it is necessary to consider both of these effects in practice to determine the ΔE ST Reduce and achieve high PLQY.

[0271] One common approach to designing TADF materials is to covalently link one or more HOMO-distributed (electron) donor moieties and one or more LUMO-distributed (electron) acceptor moieties to the same bridge, referred to herein as a linker group. B may, for example, contain two or three linker groups attached to the same acceptor moiety, and additional donor and acceptor moieties may be attached to each of the two or three linker groups.

[0272] Alternatively, one or more donor moieties and one or more acceptor moieties can be directly attached to one another (without the presence of a linker group).

[0273] Typical donor moieties are derivatives of diphenylamine, carbazole, acridine, phenoxazine and related structures.

[0274] Derivatives of benzene, biphenyl groups and, to some extent, terphenyl groups are common linker groups.

[0275] Nitrile groups are very common acceptor moieties in TADF molecules, well-known examples of which include: (i) Carbazolyldicyanobenzene compounds such as 2CzPN (4,5-di(9H-carbazol-9-yl)phthalonitrile), DCzIPN (4,6-di(9H-carbazol-9-yl)isophthalonitrile), 4CzPN (3,4,5,6-tetra(9H-carbazol-9-yl)phthalonitrile), 4CzIPN (2,4,5,6-tetra(9H-carbazol-9-yl)isophthalonitrile), 4CzTPN (2,4,5,6-tetra(9H-carbazol-9-yl)terephthalonitrile) and their derivatives; (ii) Carbazolylcyanopyridine compounds such as 4CzCNPy (2,3,5,6-tetra(9H-carbazol-9-yl)-4-cyanopyridine) and its derivatives; (iii) Carbazolylcyanobiphenyl compounds such as CNBPCz (4,4',5,5'-tetra(9H-carbazol-9-yl)-[1,1'-biphenyl]-2,2'-dicarbonitrile), CzBPCN (4,4',6,6'-tetra(9H-carbazol-9-yl)-[1,1'-biphenyl]-3,3'-dicarbonitrile), DDCzIPN (3,3',5,5'-tetra(9H-carbazol-9-yl)-[1,1'-biphenyl]-2,2',6,6'-tetracarbonitrile) and their derivatives; Here, in these materials, one or more nitrile groups are also replaced with fluorine (F) or trifluoromethyl (CF3) as the acceptor moiety.

[0276] Nitrogen heterocycles such as triazine, pyrimidine, triazole, oxadiazole, thiadiazole, heptazine, 1,4-diazatriphenylene, benzothiazole, benzoxazole, quinoxaline, and diazafluorene derivatives are also well-known acceptor moieties used in TADF molecular construction. For example, known examples of TADF molecules containing triazine acceptors include PIC-TRZ (7,7'-(6-([1,1'-biphenyl]-4-yl)-1,3,5-triazine-2,4-diyl)bis(5-phenyl-5,7-dihydroindolo[2,3-b]carbazole)), mBFCzTrz (5-(3-(4,6-diphenyl-1,3,5-triazin-2-yl))phenyl)-5H-benzofuro[3,2-c]carbazole), and DCzTrz (9,9'-(5-(4,6-diphenyl-1,3,5-triazin-2-yl)-1,3-phenylene)bis(9H-carbazole)).

[0277] Another group of TADF materials includes diaryl ketones such as benzophenone, or (heteroaryl)aryl ketones and their derivatives such as 4-benzoylpyridine, 9,10 anthraquinone, 9H-xanthen-9-one, as acceptor moieties to which donor moieties (mainly carbazolyl substituents) are attached. Examples of such TADF molecules include BPBCz (bis(4-(9'-phenyl-9H,9'H-[3,3'-bicarbazol]-9-yl)phenyl)methanone), mDCBP ((3,5-di(9H-carbazol-9-yl)phenyl)(pyridin-4-yl)methanone), AQ-DTBu-Cz (2,6-bis(4-(3,6-di-tert-butyl-9H-carbazol-9-yl)phenyl)anthracene-9,10-dione), and MCz-XT (3-(1,3,6,8-tetramethyl-9H-carbazol-9-yl)-9H-xanthen-9-one), respectively.

[0278] Sulfoxides, particularly diphenyl sulfoxide, are also commonly used as acceptor moieties for the construction of TADF materials; well-known examples include 4-PC-DPS (9-phenyl-3-(4-(phenylsulfonyl)phenyl)-9H-carbazole), DitBu-DPS (9,9'-(sulfonylbis(4,1-phenylene))bis(9H-carbazole)), and TXO-PhCz (2-(9-phenyl-9H-carbazol-3-yl)-9H-thioxanthen-9-one 10,10-dioxide).

[0279] The specific material must meet the basic requirements mentioned above, i.e., ΔE ST By way of example, all of the above-mentioned groups of TADF molecules are suitable for use in the present invention, provided that the value of the TADF molecule is less than 0.4 eV. B can be provided.

[0280] Those skilled in the art will recognize that many more materials than just the named structures are suitable TADF materials in the context of the present invention. B Those skilled in the art are familiar with the principles of designing such molecules and know how to design such molecules with particular emission hues (e.g., blue, green, or red emission).

[0281] Other contributions include: H. Tanaka, K. Shizu, H. Nakanotani, C. Adachi, Chemistry of Materials 2013, 25(18), 3766, DOI: 10.1021 / cm402428a; Advanced Materials 2013, 25(24), 3319, Advanced Materials 2013, 25(24), 3319; Nasu K., Nakagawa T., Nomura H., Lin C.-J., Cheng C.-H., Tseng M.-R., Yasudad T., Adachi C., Chemical Communications 2013, 49(88), 10385, DOI: 10.1039 / c3cc44179b; Nature Photonics 2014, 8(4), 326, DOI: 10.1038 / nphoton.2014.12; B.Wex, BRKafarani, Journal of Materials Chemistry C 2017, 5, 8622, DOI: 10.1039 / c7tc02156a; Chemistry of Materials 2017, 29(5), 1946, DOI: 10.1021 / acs.chemmater.6b05324; Beilstein Journal of Organic Chemistry 2018, 14, 282, DOI: 10.3762 / bjoc.14.18; X. Liang, Z.-L.Tu, Y.-X.Zheng, Chemistry-A European Journal 2019, 25(22), 5623, DOI: 10.1002 / chem.201805952. .

[0282] Also, for example, US2015105564(A1), US2015048338(A1), US2015141642(A1), US2014336379(A1), US2014138670(A1), US2012241732(A1), EP3315581(A1), EP3483156(A1) and US2018053901(A1) disclose TADF materials E that can be used in the organic electroluminescence device according to the present invention. B It is understood that this does not mean that the present invention is limited to organic electroluminescent devices comprising the TADF materials disclosed in the cited references. Any TADF material used in the state of the art is considered to be a suitable TADF material E in the context of the present invention. B It is understood that:

[0283] In one embodiment of the present invention, each TADF material E B comprises one or more chemical moieties independently selected from the group consisting of CN, CF3, and optionally substituted 1,3,5-triazinyl groups.

[0284] In one embodiment of the present invention, each TADF material E B comprises one or more chemical moieties independently selected from the group consisting of CN and optionally substituted 1,3,5-triazinyl groups.

[0285] In one embodiment of the present invention, each TADF material E B contains one or more optionally substituted 1,3,5-triazinyl groups.

[0286] In one embodiment of the present invention, each TADF material E Bcomprises one or more chemical moieties independently selected from an amino group, an indolyl group, a carbazolyl group, and derivatives thereof, any of which may be optionally substituted, wherein the groups are bonded to the core structure of the respective TADF molecule via a nitrogen (N) or carbon (C) atom, and the substituents attached to the groups can form a monocyclic or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic system.

[0287] In a preferred embodiment of the present invention, at least one, preferably each, TADF material E B includes: one or more first chemical moieties independently selected from amino groups, indolyl groups, carbazolyl groups, and derivatives thereof, each of which is optionally substituted, wherein the groups are attached to the core structure of the respective TADF molecule via a nitrogen (N) or carbon (C) atom, and the substituents attached to the groups can form a monocyclic or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system; and one or more second chemical moieties independently selected from the group consisting of CN, CF3, and optionally substituted 1,3,5-triazinyl groups.

[0288] In a more preferred embodiment of the present invention, at least one, preferably each, TADF material E B includes: one or more first chemical moieties independently selected from amino groups, indolyl groups, carbazolyl groups, and derivatives thereof, each of which is optionally substituted, wherein the groups are attached to the core structure of the respective TADF molecule via a nitrogen (N) or carbon (C) atom, and the substituents attached to the groups can form a monocyclic or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system; and one or more second chemical moieties independently selected from the group consisting of CN, CF3, and optionally substituted 1,3,5-triazinyl groups.

[0289] In a more preferred embodiment of the present invention, at least one, preferably each, TADF material E B includes: one or more first chemical moieties independently selected from amino groups, indolyl groups, carbazolyl groups, and derivatives thereof, each of which is optionally substituted, wherein the groups are attached to the core structure of the respective TADF molecule via a nitrogen (N) or carbon (C) atom, and the substituents attached to the groups can form a monocyclic or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system; and one or more optionally substituted 1,3,5-triazinyl groups;

[0290] Those skilled in the art will understand that the term "derivatives thereof" means that the respective parent structure is optionally substituted, or any atom within the respective parent structure is replaced, for example, with an atom of another element.

[0291] In one embodiment of the present invention, the organic electroluminescent device comprises at least one light-emitting layer B comprising: (i) The lowest excited singlet state energy level E(S1 H ) and the lowest excited triplet state energy level E(T1 H at least one host material H B , (ii) The lowest excited singlet state energy level E(S1 P ) and the lowest excited triplet state energy level E(T1 P ) at least one phosphorescent material P B , (iii) The lowest excited singlet state energy level E(S1 S ) and the lowest excited triplet state energy level E(T1 S ) and at least one small full width at half maximum (FWHM) emitter S emitting light having a full width at half maximum (FWHM) of 0.25 eV or less. B , and (iv) The lowest excited singlet state energy level E(S1 E) and the lowest excited triplet state energy level E(T1 E At least one thermally activated delayed fluorescence (TADF) material E B , Here, the relationships expressed by the following equations (1) and (2) are applied: E(T1 H )>E(T1 P ) (1) E(T1 P )>E(S1 S ) (2) Each TADF material E B includes: one or more first chemical moieties independently selected from amino groups, indolyl groups, carbazolyl groups, and derivatives thereof, each of which is optionally substituted, wherein the groups are attached to the core structure of the respective TADF molecule via a nitrogen (N) or carbon (C) atom, and the substituents attached to the groups can form a monocyclic or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system; and one or more second chemical moieties independently selected from the group consisting of CN, and optionally substituted 1,3,5-triazinyl groups.

[0292] In one embodiment of the present invention, each TADF material E B includes: one or more first chemical moieties each comprising or consisting of a structure according to chemical formula D1; [ka] ...Chemical formula DI optionally, one or more second chemical moieties, each independently selected from CN, CF3, and a structure according to any one of formulas AI, A-II, A-III, and A-IV; and [ka] ...Chemical formula AI [ka] ...Chemical formula A-II [ka] ...Chemical formula A-III [ka] ...Chemical formula A-IV one third chemical moiety comprising or consisting of a structure according to any one of chemical formulas LI, L-II, L-III, L-IV, LV, L-VI, L-VII, and L-VIII; [ka] ...Chemical formula LI [ka] ...Chemical formula L-II [ka] ...Chemical formula L-III [ka] ...Chemical formula L-IV [ka] ...chemical formula LV [ka] ...Chemical formula L-VI [ka] ...Chemical formula L-VII [ka] ...Chemical formula L-VIII where: the one or more first chemical moieties and the one or more second chemical moieties are covalently bonded to a third chemical moiety via a single bond; In the chemical formula DI, # indicates the attachment position of a single bond connecting each first chemical moiety according to chemical formula DI to a third chemical moiety; Z 2 are, in each case independently of one another, a direct bond, a CR 1 R 2 , C=CR 1 R 2 , C=O, C=NR 1 , N.R. 1 , O, SiR 1 R 2 , S, S(O) and S(O)2; R a , R b , R d , R 1 and R 2 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, N(R 3 )2, OR 3 , Si(R 3 )3, B(OR 3 )2, OSO2R 3 ,CF3,CN,F,Cl,Br,I, C1-C 40 Alkyl, This is a group consisting of one or more substituents R 3 is selectively substituted with where one or more non-adjacent CH groups are R 3 C=CR 3 , C≡C, Si(R 3 )2, Ge(R 3 )2, Sn(R 3 )2, C=O, C=S, C=Se, C=NR 3 , P(=O)(R 3 ), SO, SO2, NR 3 , O, S or CONR3 is selectively substituted with C1-C 40 Alkoxy, This is a group consisting of one or more substituents R 3 is selectively substituted with where one or more non-adjacent CH groups are R 3 C=CR 3 , C≡C, Si(R 3 )2, Ge(R 3 )2, Sn(R 3 )2, C=O, C=S, C=Se, C=NR 3 , P(=O)(R 3 ), SO, SO2, NR 3 , O, S or CONR 3 is selectively substituted with C1-C 40 thioalkoxy, This is a group consisting of one or more substituents R 3 is selectively substituted with where one or more non-adjacent CH groups are R 3 C=CR 3 , C≡C, Si(R 3 )2, Ge(R 3 )2, Sn(R 3 )2, C=O, C=S, C=Se, C=NR 3 , P(=O)(R 3 ), SO, SO2, NR 3 , O, S or CONR 3 is selectively substituted with C2-C 40 alkenyl, This is a group consisting of one or more substituents R 3 is selectively substituted with where one or more non-adjacent CH groups are R 3 C=CR 3 , C≡C, Si(R 3 )2, Ge(R 3 )2, Sn(R 3 )2, C=O, C=S, C=Se, C=NR 3 , P(=O)(R 3 ), SO, SO2, NR 3 , O, S or CONR 3 is selectively substituted with C2-C 40 Alkynyl, This is a group consisting of one or more substituents R 3 is selectively substituted with where one or more non-adjacent CH groups are R 3 C=CR 3 , C≡C, Si(R 3 )2, Ge(R 3 )2, Sn(R 3 )2, C=O, C=S, C=Se, C=NR 3 , P(=O)(R 3 ), SO, SO2, NR 3 , O, S or CONR 3 is selectively substituted with C6-C 60 aryl, This is a group consisting of one or more substituents R 3 is optionally substituted with, and C3-C 60 heteroaryl, This is a group consisting of one or more substituents R 3 is selectively substituted with R 3 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, N(R 4 )2, OR 4 , Si(R 4 )3, B(OR 4 )2, OSO2R 4 , CF3, CN, F, Br, I, C1-C 40 Alkyl, This is a group consisting of one or more substituents R 4 is selectively substituted with where one or more non-adjacent CH groups are R 4 C=CR 4 , C≡C, Si(R 4 )2, Ge(R 4 )2, Sn(R 4 )2, C=O, C=S, C=Se, C=NR 4 , P(=O)(R 4 ), SO, SO2, NR 4 , O, S or CONR 4 is selectively substituted with C1-C 40 Alkoxy, This is a group consisting of one or more substituents R 4 is selectively substituted with where one or more non-adjacent CH groups are R 4 C=CR 4 , C≡C, Si(R 4 )2, Ge(R 4 )2, Sn(R 4 )2, C=O, C=S, C=Se, C=NR 4 , P(=O)(R 4 ), SO, SO2, NR 4 , O, S or CONR 4 is selectively substituted with C1-C 40 thioalkoxy, This is a group consisting of one or more substituents R 4 is selectively substituted with where one or more non-adjacent CH groups are R 4 C=CR 4 , C≡C, Si(R 4 )2, Ge(R 4 )2, Sn(R 4 )2, C=O, C=S, C=Se, C=NR 4 , P(=O)(R 4 ), SO, SO2, NR 4 , O, S or CONR 4 is selectively substituted with C2-C 40 alkenyl, This is a group consisting of one or more substituents R 4 is selectively substituted with where one or more non-adjacent CH groups are R 4 C=CR 4 , C≡C, Si(R 4 )2, Ge(R 4 )2, Sn(R 4 )2, C=O, C=S, C=Se, C=NR 4 , P(=O)(R 4 ), SO, SO2, NR 4 , O, S or CONR 4 is selectively substituted with C2-C 40 Alkynyl, This is a group consisting of one or more substituents R 4 is selectively substituted with where one or more non-adjacent CH groups are R 4 C=CR 4 , C≡C, Si(R 4 )2, Ge(R 4 )2, Sn(R 4 )2, C=O, C=S, C=Se, C=NR 4 , P(=O)(R 4 ), SO, SO2, NR 4 , O, S or CONR 4 is selectively substituted with C6-C 60 aryl, This is a group consisting of one or more substituents R 4 is optionally substituted with, and C3-C 57 heteroaryl, This is a group consisting of one or more substituents R 4 is selectively substituted with wherein optionally, the optional substituent R a , R b , R d , R 1 , R 2 , R 3 and R 4 are, independently of each other, R a , R b , R d , R 1 , R 2 , R 3 and R 4 together with one or more adjacent substituents selected from, form a monocyclic or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic and / or benzo-fused ring system, optionally the ring system thus formed may contain one or more substituents R 5 is selectively substituted with R 4 and R 5 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, OPh, CF3, CN, F, C1-C5 alkyl, wherein one or more hydrogen atoms are optionally replaced, independently of one another, by deuterium, CN, CF or F; C1-C5 alkoxy, wherein one or more hydrogen atoms are optionally replaced, independently of one another, by deuterium, CN, CF or F; C1-C5 thioalkoxy, wherein one or more hydrogen atoms are optionally replaced, independently of one another, by deuterium, CN, CF or F; C2-C5 alkenyl, wherein one or more hydrogen atoms are optionally replaced, independently of one another, by deuterium, CN, CF or F; C2-C5 alkynyl, wherein one or more hydrogen atoms are optionally replaced, independently of one another, by deuterium, CN, CF or F; C6-C 18 aryl, wherein one or more hydrogen atoms are optionally replaced, independently of one another, by deuterium, C1-C5 alkyl, Ph or CN; C3-C 17 heteroaryl, wherein one or more hydrogen atoms are optionally replaced, independently of one another, by deuterium, Ph, or C1-C5 alkyl; N(C6-C 18 aryl)2, N(C3-C 17 heteroaryl)2, and N(C3-C 17 Heteroaryl)(C6-C 18 aryl), a is an integer and is either 0 or 1; b is an integer, in each case 0 or 1, where both b are always identical, where when integer a is 1, both integers b are 0, and when both integers b are 1, integer a is 0, In the chemical formulae AI, A-II, A-III and A-IV, the dotted line indicates a single bond connecting a second chemical moiety according to formula AI, A-II, A-III, or A-IV to a third chemical moiety, respectively; Q 1 are in each case independently of one another: nitrogen (N), CR 6 and CR 7 and wherein in formula AI, two adjacent groups Q 1 are not both nitrogen (N), and here, the group Q of the chemical formula AI 1 If none of the groups is nitrogen (N), the group Q 1 At least one of them is CR 7 and Q 2 are in each case independently of one another nitrogen (N) and CR 6 with the proviso that in formulae A-II and A-III, at least one group Q 2 is nitrogen (N) and two adjacent groups Q 2 are not both nitrogen (N), R 6 and R 8 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, N(R 9 )2, OR 9 , Si(R 9 )3, B(OR 9 )2, OSO2R 9 ,CF3,CN,F,Cl,Br,I, C1-C 40 Alkyl, This is a group consisting of one or more substituents R 9 is selectively substituted with where one or more non-adjacent CH groups are R 9 C=CR 9 , C≡C, Si(R 9 )2, Ge(R 9 )2, Sn(R 9 )2, C=O, C=S, C=Se, C=NR 9 , P(=O)(R 9 ), SO, SO2, NR 9 , O, S or CONR 9 is selectively substituted with C1-C 40 Alkoxy, This is a group consisting of one or more substituents R 9 is selectively substituted with where one or more non-adjacent CH groups are R 9 C=CR 9 , C≡C, Si(R 9 )2, Ge(R 9 )2, Sn(R 9 )2, C=O, C=S, C=Se, C=NR 9 , P(=O)(R 9 ), SO, SO2, NR 9 , O, S or CONR 9 is selectively substituted with C1-C 40 thioalkoxy, This is a group consisting of one or more substituents R 9 is selectively substituted with where one or more non-adjacent CH groups are R 9 C=CR 9 , C≡C, Si(R 9 )2, Ge(R 9 )2, Sn(R 9 )2, C=O, C=S, C=Se, C=NR 9 , P(=O)(R 9 ), SO, SO2, NR 9 , O, S or CONR 9 is selectively substituted with C2-C 40 alkenyl, This is a group consisting of one or more substituents R 9 is selectively substituted with where one or more non-adjacent CH groups are R 9 C=CR 9 , C≡C, Si(R 9 )2, Ge(R 9 )2, Sn(R 9 )2, C=O, C=S, C=Se, C=NR 9 , P(=O)(R 9 ), SO, SO2, NR 9 , O, S or CONR 9 is selectively substituted with C2-C 40 Alkynyl, This is a group consisting of one or more substituents R 9 is selectively substituted with where one or more non-adjacent CH groups are R 9 C=CR 9 , C≡C, Si(R 9 )2, Ge(R 9 )2, Sn(R 9 )2, C=O, C=S, C=Se, C=NR 9 , P(=O)(R 9 ), SO, SO2, NR 9 , O, S or CONR 9 is selectively substituted with C6-C 60 aryl, This is a group consisting of one or more substituents R 9 is optionally substituted with, and C3-C 60 heteroaryl, This is a group consisting of one or more substituents R 9 is selectively substituted with R 9 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, N(R 10 )2, OR 10 , Si(R 10 )3, B(OR 10 )2, OSO2R 10 ,CF3,CN,F,Cl,Br,I, C1-C 40 Alkyl, This is a group consisting of one or more substituents R 10 is selectively substituted with where one or more non-adjacent CH groups are R 10 C=CR 10 , C≡C, Si(R 10 )2, Ge(R 10 )2, Sn(R 10 )2, C=O, C=S, C=Se, C=NR 10 , P(=O)(R 10 ), SO, SO2, NR 10 , O, S or CONR 10 is selectively substituted with C1-C 40 Alkoxy, This is a group consisting of one or more substituents R 10 is selectively substituted with where one or more non-adjacent CH groups are R 10 C=CR 10 , C≡C, Si(R 10 )2, Ge(R 10 )2, Sn(R 10 )2, C=O, C=S, C=Se, C=NR 10 , P(=O)(R 10 ), SO, SO2, NR 10 , O, S or CONR 10 is selectively substituted with C1-C 40 thioalkoxy, This is a group consisting of one or more substituents R 10 is selectively substituted with where one or more non-adjacent CH groups are R 10 C=CR 10 , C≡C, Si(R 10 )2, Ge(R 10 )2, Sn(R 10 )2, C=O, C=S, C=Se, C=NR 10 , P(=O)(R 10 ), SO, SO2, NR 10 , O, S or CONR 10 is selectively substituted with C2-C 40 alkenyl, This is a group consisting of one or more substituents R 10 is selectively substituted with where one or more non-adjacent CH groups are R 10 C=CR 10 , C≡C, Si(R 10 )2, Ge(R 10 )2, Sn(R 10 )2, C=O, C=S, C=Se, C=NR 10 , P(=O)(R 10 ), SO, SO2, NR 10 , O, S or CONR 10 is selectively substituted with C2-C 40 Alkynyl, This is a group consisting of one or more substituents R 10 is selectively substituted with where one or more non-adjacent CH groups are R 10 C=CR 10 , C≡C, Si(R 10 )2, Ge(R 10 )2, Sn(R 10 )2, C=O, C=S, C=Se, C=NR 10 , P(=O)(R 10 ), SO, SO2, NR 10 , O, S or CONR 10 is selectively substituted with C6-C 60 aryl, This is a group consisting of one or more substituents R 10 is optionally substituted with, and C3-C 60 heteroaryl, This is a group consisting of one or more substituents R 10 is selectively substituted with R 10 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, OPh, CF3, CN, F, C1-C5 alkyl, wherein one or more hydrogen atoms are optionally replaced, independently of one another, by deuterium, CN, CF or F; C1-C5 alkoxy, wherein one or more hydrogen atoms are optionally replaced, independently of one another, by deuterium, CN, CF or F; C1-C5 thioalkoxy, wherein one or more hydrogen atoms are optionally replaced, independently of one another, by deuterium, CN, CF or F; C2-C5 alkenyl, wherein one or more hydrogen atoms are optionally replaced, independently of one another, by deuterium, CN, CF or F; C2-C5 alkynyl, wherein one or more hydrogen atoms are optionally replaced, independently of one another, by deuterium, CN, CF or F; C6-C 18 aryl, wherein one or more hydrogen atoms are optionally replaced, independently of one another, by deuterium, C1-C5 alkyl, Ph or CN; C3-C 17 heteroaryl, wherein one or more hydrogen atoms are optionally replaced, independently of one another, by deuterium, Ph, or C1-C5 alkyl; N(C6-C 18 aryl)2, N(C3-C 17 heteroaryl)2, and N(C3-C 17 Heteroaryl)(C6-C 18 aryl), R 7 are, in each occurrence independently of one another, selected from the group consisting of CN, CF3 and a structure according to the chemical formula EWG-I: [ka] ...Chemical formula EWG-I

[0293] where R X is R 6 where, in the formula EWG-I, at least one R X The group is CN or CF3, wherein in Formula A-IV, two adjacent groups R 8 optionally forms an aromatic ring, which is fused to the structure of formula A-IV, and which contains one or more substituents R 10 wherein the fused ring system thus formed optionally contains a total of 9 to 18 ring atoms; In the chemical formulas LI, L-II, L-III, L-IV, LV, L-VI, L-VII and L-VIII, Q 3 are in each case independently of one another nitrogen (N) and CR 12 are selected from, but with 1 or more Q 3 is nitrogen (N), R 11are, in each occurrence independently of one another, the attachment position of a single bond linking the first or second chemical moiety to a third chemical moiety, or are, independently of one another, selected from the group consisting of: Hydrogen, deuterium, F, Cl, Br, I, C1-C5 alkyl, wherein one or more hydrogen atoms are selectively replaced with deuterium; C6-C 18 aryl, wherein one or more hydrogen atoms are optionally, independently of one another, deuterium, a C1-C5 alkyl group, a C6-C 18 substituted by aryl groups, F, Cl, Br and I; R 12 is R 6 It is defined as wherein the maximum number of first and second chemical moieties attached to a third chemical moiety is determined by the number of attachment positions available on the third chemical moiety (i.e., R 11 The number of TADF materials E is limited only by the above-mentioned provisions. B comprises at least one first chemical moiety, at least one second chemical moiety, and exactly one third chemical moiety.

[0294] In a preferred embodiment of the present invention, Z 2 are, in each case independently of one another, a direct bond, a CR 1 R 2 , C=CR 1 R 2 , C=O, C=NR 1 , N.R. 1 , O, SiR 1 R 2 , S, S(O) and S(O)2; R a , R b , R d , R 1 and R 2 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, N(R 3 )2, OR 3 , Si(R 3)3, CF3, CN, F, Cl, Br, I, C1-C 40 Alkyl, This is a group consisting of one or more substituents R 3 is selectively substituted with where one or more non-adjacent CH groups are R 3 C=CR 3 , C≡C, Si(R 3 )2, Ge(R 3 )2, Sn(R 3 )2, C=O, C=S, C=Se, C=NR 3 , P(=O)(R 3 ), SO, SO2, NR 3 , O, S or CONR 3 is selectively substituted with C6-C 60 aryl, This is a group consisting of one or more substituents R 3 is optionally substituted with, and C3-C 60 heteroaryl, This is a group consisting of one or more substituents R 3 is selectively substituted with R 3 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, N(R 4 )2, OR 4 , Si(R 4 )3, CF3, CN, F, Br, I, C1-C 40 Alkyl, This is a group consisting of one or more substituents R 4 is selectively substituted with where one or more non-adjacent CH groups are R 4 C=CR 4 , C≡C, Si(R 4 )2, Ge(R 4 )2, Sn(R 4 )2, C=O, C=S, C=Se, C=NR 4 , P(=O)(R 4 ), SO, SO2, NR 4 , O, S or CONR 4 is selectively substituted with C6-C60 aryl, This is a group consisting of one or more substituents R 4 is optionally substituted with, and C3-C 57 heteroaryl, This is a group consisting of one or more substituents R 4 is selectively substituted with wherein optionally the substituent R a , R b , R d , R 1 , R 2 , R 3 and R 4 Any one of the following may be independently selected from R a , R b , R d , R 1 , R 2 , R 3 and R 4 together with one or more adjacent substituents selected from, form a monocyclic or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic and / or benzo-fused ring system, wherein optionally the ring system thus formed contains one or more substituents R 5 is selectively substituted with R 4 and R 5 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, CF3, CN, F, C1-C5 alkyl, wherein one or more hydrogen atoms are optionally replaced, independently of one another, by deuterium, CN, CF or F; C6-C 18 aryl, wherein one or more hydrogen atoms are optionally replaced, independently of one another, by deuterium, C1-C5 alkyl, Ph or CN; C3-C 17 heteroaryl, wherein one or more hydrogen atoms are optionally replaced, independently of one another, by deuterium, C1-C5 alkyl or Ph; N(C6-C 18 aryl)2, N(C3-C17 heteroaryl)2, and N(C3-C 17 Heteroaryl)(C6-C 18 aryl), a is an integer and is either 0 or 1; b is an integer, in each case 0 or 1, where both b are always identical, where when integer a is 1, both integers b are 0, and when both integers b are 1, integer a is 0, Q 1 are in each case independently of one another: nitrogen (N), CR 6 and CR 7 and wherein in formula AI, two adjacent groups Q 1 are not both nitrogen (N), and here, the group Q of the chemical formula AI 1 If none of the groups is nitrogen (N), the group Q 1 At least one of them is CR 7 and Q 2 are in each case independently of one another nitrogen (N) and CR 6 with the proviso that in formulae A-II and A-III, at least one group Q 2 is nitrogen (N) and two adjacent groups Q 2 are not both nitrogen (N), R 6 and R 8 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, N(R 9 )2, OR 9 , Si(R 9 )3, B(OR 9 )2, OSO2R 9 ,CF3,CN,F,Cl,Br,I, C1-C 40 Alkyl, This is a group consisting of one or more substituents R 9 is selectively substituted with where one or more non-adjacent CH groups are R 9 C=CR 9 , C≡C, Si(R9 )2, Ge(R 9 )2, Sn(R 9 )2, C=O, C=S, C=Se, C=NR 9 , P(=O)(R 9 ), SO, SO2, NR 9 , O, S or CONR 9 is selectively substituted with C6-C 60 aryl, This is a group consisting of one or more substituents R 9 is optionally substituted with, and C3-C 60 heteroaryl, This is a group consisting of one or more substituents R 9 is selectively substituted with R 9 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, N(R 10 )2, OR 10 , Si(R 10 )3, B(OR 10 )2, OSO2R 10 ,CF3,CN,F,Cl,Br,I, C1-C 40 Alkyl, This is a group consisting of one or more substituents R 10 is selectively substituted with where one or more non-adjacent CH groups are R 10 C=CR 10 , C≡C, Si(R 10 )2, Ge(R 10 )2, Sn(R 10 )2, C=O, C=S, C=Se, C=NR 10 , P(=O)(R 10 ), SO, SO2, NR 10 , O, S or CONR 10 is selectively substituted with C6-C 60 aryl, This is a group consisting of one or more substituents R 10 is optionally substituted with, and C3-C 60 heteroaryl, This is a group consisting of one or more substituents R10 is selectively substituted with R 10 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, OPh, CF3, CN, F, C1-C5 alkyl, wherein one or more hydrogen atoms are optionally replaced, independently of one another, by deuterium, CN, CF or F; C6-C 18 aryl, wherein one or more hydrogen atoms are optionally replaced, independently of one another, by deuterium, C1-C5 alkyl, Ph or CN; C3-C 17 heteroaryl, wherein one or more hydrogen atoms are optionally replaced, independently of one another, by deuterium, Ph, or C1-C5 alkyl; N(C6-C 18 aryl)2, N(C3-C 17 heteroaryl)2, and N(C3-C 17 Heteroaryl)(C6-C 18 aryl), R 7 are, in each occurrence independently of one another, selected from the group consisting of CN, CF3 and a structure according to the chemical formula EWG-I: [ka] ...Chemical formula EWG-I where R X is R 6 where at least one R X The group is CN or CF3, wherein in Formula A-IV, two adjacent groups R 8 optionally forms an aromatic ring, which is fused to the structure of formula A-IV, and which contains one or more substituents R 10 wherein the fused ring system thus formed optionally contains a total of 9 to 18 ring atoms; Q 3are in each case independently of one another nitrogen (N) and CR 12 , with the proviso that at least one Q 3 is nitrogen (N), R 11 are, in each occurrence independently of one another, the attachment position of a single bond linking the first or second chemical moiety to a third chemical moiety, or are, independently of one another, selected from the group consisting of: Hydrogen, deuterium, C1-C5 alkyl, wherein one or more hydrogen atoms are selectively replaced with deuterium; C6-C 18 aryl, wherein one or more hydrogen atoms are optionally, independently of one another, deuterium, C1-C5 alkyl groups and C6-C 18 substituted by an aryl group, R 12 is R 6 It is defined as wherein the maximum number of first and second chemical moieties attached to the third chemical moiety is limited by the number of attachment positions available on the third chemical moiety (i.e., the number of substituents R 11 (preferably, according to the above definition, each TADF material E B comprises at least one first chemical moiety, at least one second chemical moiety, and exactly one third chemical moiety).

[0295] In a more preferred embodiment of the present invention, Z 2 are, in each case independently of one another, a direct bond, a CR 1 R 2 , C=CR 1 R 2 , C=O, C=NR 1 , N.R. 1 , O, SiR 1 R 2 , S, S(O) and S(O)2; R a , R b , R d , R 1 and R 2are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, N(R 3 )2, OR 3 , Si(R 3 )3, CF3, CN, F, Cl, Br, I, C1-C 40 Alkyl, This is a group consisting of one or more substituents R 3 is selectively substituted with C6-C 18 aryl, This is a group consisting of one or more substituents R 3 is optionally substituted with, and C3-C 17 heteroaryl, This is a group consisting of one or more substituents R 3 is selectively substituted with R 3 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, N(R 4 )2, Si(R 4 )3, CF3, CN, F, C1-C5 alkyl, This is a group consisting of one or more substituents R 4 is selectively substituted with C6-C 18 aryl, This is a group consisting of one or more substituents R 4 is optionally substituted with, and C3-C 17 heteroaryl, This is a group consisting of one or more substituents R 4 is selectively substituted with wherein optionally the substituent R a , R b , R d , R 1 , R 2 and R 3 Any one of the following may be independently selected from R a , R b , R d , R 1 , R 2 and R 3together with one or more adjacent substituents selected from, form a monocyclic or polycyclic, aliphatic or aromatic, carbocyclic or heterocyclic and / or benzo-fused ring system, wherein optionally the ring system thus formed contains one or more substituents R 5 is selectively substituted with R 4 and R 5 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, CF3, CN, F, Me, i Pr, t Bu, N(Ph)2, and One or more hydrogen atoms may be optionally, independently of one another, deuterium, Me, i Pr, t Ph substituted with Bu and Ph, a is an integer and is either 0 or 1; b is an integer, in each case 0 or 1, where both b are always identical, where when integer a is 1, both integers b are 0, and when both integers b are 1, integer a is 0, Q 1 are in each case independently of one another: nitrogen (N), CR 6 and CR 7 and wherein in formula AI, two adjacent groups Q 1 are not both nitrogen (N), and here, the group Q of the chemical formula AI 1 If none of the groups is nitrogen (N), the group Q 1 At least one of them is CR 7 and Q 2 are in each case independently of one another nitrogen (N) and CR 6 with the proviso that in formulae A-II and A-III, at least one group Q 2 is nitrogen (N) and two adjacent groups Q 2 are not both nitrogen (N), R 6 and R 8 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, N(R9 )2, OR 9 , Si(R 9 )3, CF3, CN, F, C1-C5 alkyl, This is a group consisting of one or more substituents R 9 is selectively substituted with C6-C 18 aryl, This is a group consisting of one or more substituents R 9 is optionally substituted with, and C3-C 17 heteroaryl, This is a group consisting of one or more substituents R 9 is selectively substituted with R 9 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, N(R 10 )2, OR 10 , Si(R 10 )3, CF3, CN, F, C1-C5 alkyl, This is a group consisting of one or more substituents R 10 is selectively substituted with C6-C 18 aryl, This is a group consisting of one or more substituents R 10 is optionally substituted with, and C3-C 17 heteroaryl, This is a group consisting of one or more substituents R 10 is selectively substituted with R 10 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, Me, i Pr, t Bu, CF3, CN, F, N(Ph)2, and One or more hydrogen atoms may be optionally, independently of one another, deuterium, Me, i Pr, t Ph substituted by Bu, Ph, CN, CF3 or F, R 7 are, in each occurrence independently of one another, selected from the group consisting of CN, CF3 and a structure according to the chemical formula EWG-I: [ka] ...Chemical formula EWG-I where R X is R 6 where at least one R X The group is CN or CF3, wherein in Formula A-IV, two adjacent groups R 8 optionally forms an aromatic ring, which is fused to the structure of formula A-IV, and which contains one or more substituents R 10 wherein the fused ring system thus formed optionally contains a total of 9 to 18 ring atoms; Q 3 are in each case independently of one another nitrogen (N) and CR 12 , with the proviso that at least one Q 3 is nitrogen (N), R 11 are, in each occurrence independently of one another, the attachment position of a single bond linking the first or second chemical moiety to a third chemical moiety, or are, independently of one another, selected from the group consisting of: Hydrogen, deuterium, C1-C5 alkyl, wherein one or more hydrogen atoms are selectively replaced with deuterium; C6-C 18 aryl, This is deuterium, Me, i Pr, t optionally substituted with one or more substituents independently selected from the group consisting of Bu and Ph; R 12 is R 6 It is defined as wherein the maximum number of first and second chemical moieties attached to the third chemical moiety is limited by the number of attachment positions available on the third chemical moiety (i.e., the number of substituents R 11 (Preferably, the number of each TADF material E is limited only by the above-mentioned definition) Bcomprises at least one first chemical moiety, at least one second chemical moiety, and exactly one third chemical moiety).

[0296] In a more preferred embodiment of the present invention, Z 2 are, in each case independently of one another, a direct bond, a CR 1 R 2 , C=O, NR 1 , O, SiR 1 R 2 , S, S(O) and S(O)2; R a , R b , R d , R 1 and R 2 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, N(R 3 )2, OR 3 , Si(R 3 )3, CF3, CN, C1-C5 alkyl, This is a group consisting of one or more substituents R 3 is selectively substituted with C6-C 18 aryl, This is a group consisting of one or more substituents R 3 is optionally substituted with, and C3-C 17 heteroaryl, This is a group consisting of one or more substituents R 3 is selectively substituted with R 3 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, CF3, CN, F, Me, i Pr, t Bu, N(Ph)2, and One or more hydrogen atoms may be optionally, independently of one another, deuterium, Me, i Pr, t Ph substituted with Bu and Ph, wherein optionally, the optional substituent R a , R b , R d, R 1 and R 2 are, independently of each other, R a , R b , R d , R 1 and R 2 together with one or more adjacent substituents selected from, form a monocyclic or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic and / or benzo-fused ring system, wherein optionally the ring system thus formed does not contain hydrogen, deuterium, Me, i Pr, t Bu, CF3, CN, F, and one or more hydrogen atoms may be optionally, independently of one another, deuterium, Me, i Pr, t optionally substituted with one or more substituents independently selected from the group consisting of Bu, Ph, CN, CF, or Ph substituted with F; wherein the fused ring system thus formed, consisting of the structure according to formula D-1 and the connected rings formed by adjacent substituents, contains a total of 13 to 40 ring atoms, preferably 16 to 30 ring atoms; a is an integer and is either 0 or 1; b is an integer, in each case 0 or 1, where both b are always identical, where when integer a is 1, both integers b are 0, and when both integers b are 1, integer a is 0, Q 1 are in each case independently of one another: nitrogen (N), CR 6 and CR 7 and wherein in formula AI, two adjacent groups Q 1 are not both nitrogen (N), and here, the group Q of the chemical formula AI 1 If none of the groups is nitrogen (N), the group Q 1 At least one of them is CR 7 and Q 2 are in each case independently of one another nitrogen (N) and CR 6 with the proviso that in formulae A-II and A-III, at least one group Q 2is nitrogen (N) and two adjacent groups Q 2 are not both nitrogen (N), R 6 and R 8 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, N(R 9 )2, OR 9 , Si(R 9 )3, CF3, CN, F, C1-C5 alkyl, This is a group consisting of one or more substituents R 9 is selectively substituted with C6-C 18 aryl, This is a group consisting of one or more substituents R 9 is optionally substituted with, and C3-C 17 heteroaryl, This is a group consisting of one or more substituents R 9 is selectively substituted with R 9 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, Me, i Pr, t Bu, CF3, CN, F, N(Ph)2, and One or more hydrogen atoms may be optionally, independently of one another, deuterium, Me, i Pr, t Ph substituted by Bu, Ph, CN, CF3 or F, R 7 are, in each occurrence independently of one another, selected from the group consisting of CN, CF3 and a structure according to the chemical formula EWG-I: [ka] ...Chemical formula EWG-I where R X is R 6 where at least one R X The group is CN or CF3, wherein in Formula A-IV, two adjacent groups R 8optionally forms an aromatic ring, which is fused to the structure of formula A-IV, and contains hydrogen, deuterium, Me, i Pr, t Bu, CF3, CN, F, and one or more hydrogen atoms may be optionally, independently of one another, deuterium, Me, i Pr, t optionally substituted with one or more substituents independently selected from the group consisting of Bu, Ph, CN, CF, or Ph substituted with F; wherein optionally the fused ring system thus formed contains a total of 9 to 18 ring atoms; Q 3 are in each case independently of one another nitrogen (N) and CR 12 , with the proviso that at least one Q 3 is nitrogen (N), R 11 are, in each occurrence independently of one another, the attachment position of a single bond linking the first or second chemical moiety to a third chemical moiety, or are, independently of one another, selected from the group consisting of: Hydrogen, deuterium, Me, i Pr, t Bu, and Me, i Pr, t Ph optionally substituted with one or more substituents independently selected from the group consisting of Bu and Ph; R 12 is R 6 It is defined as wherein the maximum number of first and second chemical moieties attached to the third chemical moiety is limited by the number of attachment positions available on the third chemical moiety (i.e., the number of substituents R 11 (Preferably, the number of each TADF material E is limited only by the above-mentioned definition) B comprises at least one first chemical moiety, at least one second chemical moiety, and exactly one third chemical moiety).

[0297] In a more preferred embodiment of the present invention, Z 2 are, in each case independently of one another, a direct bond, a CR 1 R2 , C=O, NR 1 , O, SiR 1 R 2 , S, S(O) and S(O)2; R a , R b and R d are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, N(R 3 )2, OR 3 , Si(R 3 )3, CF3, CN, Me, i Pr, t Bu, Ph, where one or more hydrogen atoms are optionally, independently of one another, deuterium, Me, i Pr, t substituted with Bu and Ph, carbazolyl, wherein one or more hydrogen atoms are optionally replaced independently by deuterium, Me, i Pr, t substituted with Bu and Ph, triazinyl, wherein one or more hydrogen atoms are optionally replaced independently by deuterium, Me, i Pr, t substituted with Bu and Ph, pyrimidinyl, wherein one or more hydrogen atoms are optionally replaced independently by deuterium, Me, i Pr, t substituted with Bu and Ph, pyridinyl, wherein one or more hydrogen atoms are optionally replaced independently by deuterium, Me, i Pr, t substituted with Bu and Ph, R 1 and R 2 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, N(R 3 )2, OR 3 , Si(R 3 )3, CF3, CN, C1-C5 alkyl, This is a group consisting of one or more substituents R 3 is selectively substituted with C6-C18 aryl, This is a group consisting of one or more substituents R 3 is optionally substituted with, and C3-C 17 heteroaryl, This is a group consisting of one or more substituents R 3 is selectively substituted with R 3 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, CF3, CN, F, Me, i Pr, t Bu, and One or more hydrogen atoms may be optionally, independently of one another, deuterium, Me, i Pr, t Ph substituted with Bu and Ph, wherein optionally, the optional substituent R a , R b , R d , R 1 and R 2 are, independently of each other, R a , R b , R d , R 1 and R 2 together with one or more adjacent substituents selected from: wherein the ring system thus formed optionally contains hydrogen, deuterium, Me, i Pr, t Bu, CF3, CN, F, and one or more hydrogen atoms may be optionally, independently of one another, deuterium, Me, i Pr, t optionally substituted with one or more substituents independently selected from the group consisting of Bu, Ph, CN, CF, or Ph substituted with F; wherein optionally the fused ring system thus formed is composed of the structure according to formula D1 and the connected rings formed by adjacent substituents, containing a total of 13 to 30 ring atoms, preferably 16 to 30 ring atoms; a is an integer and is either 0 or 1; b is an integer, in each case 0 or 1, where both b are always identical, where when integer a is 1, both integers b are 0, and when both integers b are 1, integer a is 0, Q 1 are in each case independently of one another: nitrogen (N), CR 6 and CR 7 and wherein in formula AI, two adjacent groups Q 1 are not both nitrogen (N), and here, the group Q of the chemical formula AI 1 If none of the groups is nitrogen (N), the group Q 1 At least one of them is CR 7 and Q 2 are in each case independently of one another nitrogen (N) and CR 6 with the proviso that in formulae A-II and A-III, at least one group Q 2 is nitrogen (N) and two adjacent groups Q 2 are not both nitrogen (N), R 6 and R 8 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, N(R 9 )2, OR 9 , Si(R 9 )3, CF3, CN, F, C1-C5 alkyl, This is a group consisting of one or more substituents R 9 is selectively substituted with C6-C 18 aryl, This is a group consisting of one or more substituents R 9 is optionally substituted with, and C3-C 17 heteroaryl, This is a group consisting of one or more substituents R 9 is selectively substituted with R 9 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, Me, i Pr,t Bu, CF3, CN, F, N(Ph)2, and One or more hydrogen atoms may be optionally, independently of one another, deuterium, Me, i Pr, t Ph substituted by Bu, Ph, CN, CF3 or F, R 7 are, in each occurrence independently of one another, selected from the group consisting of CN, CF3 and a structure according to the chemical formula EWG-I: [ka] ...Chemical formula EWG-I where R X is R 6 where at least one R X The group is CN or CF3, wherein in Formula A-IV, two adjacent groups R 8 optionally forms an aromatic ring, which is fused to the structure of formula A-IV, and contains hydrogen, deuterium, Me, i Pr, t Bu, CF3, CN, F, and one or more hydrogen atoms may be optionally, independently of one another, deuterium, Me, i Pr, t optionally substituted with one or more substituents independently selected from the group consisting of Bu, Ph, CN, CF, or Ph substituted with F; wherein optionally the fused ring system thus formed contains a total of 9 to 18 ring atoms; Q 3 are in each case independently of one another nitrogen (N) and CR 12 , with the proviso that at least one Q 3 is nitrogen (N), R 11 are, in each occurrence independently of one another, the attachment position of a single bond linking the first or second chemical moiety to a third chemical moiety, or are, independently of one another, selected from the group consisting of: Hydrogen, deuterium, Me, i Pr, t Bu, and Me,i Pr, t Ph optionally substituted with one or more substituents independently selected from the group consisting of Bu and Ph; R 12 is R 6 It is defined as wherein the maximum number of first and second chemical moieties attached to the third chemical moiety is limited by the number of attachment positions available on the third chemical moiety (i.e., the number of substituents R 11 (Preferably, the number of each TADF material E is limited only by the above-mentioned definition) B comprises at least one first chemical moiety, at least one second chemical moiety, and exactly one third chemical moiety).

[0298] In a more preferred embodiment of the present invention, Z 2 are, in each case independently of one another, a direct bond, a CR 1 R 2 , C=O, NR 1 , O, SiR 1 R 2 , S, S(O) and S(O)2; R a , R b and R d are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, N(R 3 )2, OR 3 , Si(R 3 )3, CF3, CN, Me, i Pr, t Bu, One or more hydrogen atoms may be optionally, independently of one another, deuterium, Me, i Pr, t Ph substituted with Bu and Ph, and One or more hydrogen atoms may be optionally, independently of one another, deuterium, Me, i Pr, t Bu and Ph substituted carbazolyl, R 1 and R 2 are selected, independently in each occurrence, from the group consisting of: Hydrogen, Deuterium, OR 3 , Si(R 3 )3. C1-C5 alkyl, This is a group consisting of one or more substituents R 3 is selectively substituted with C6-C 18 aryl, This is a group consisting of one or more substituents R 3 is selectively substituted with R 3 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, CF3, CN, F, Me, i Pr, t Bu, and One or more hydrogen atoms may be optionally, independently of one another, deuterium, Me, i Pr, t Ph substituted with Bu and Ph, wherein optionally, the optional substituent R a , R b , R d , R 1 and R 2 are, independently of each other, R a , R b , R d , R 1 and R 2 together with one or more adjacent substituents selected from: wherein the ring system thus formed optionally contains hydrogen, deuterium, Me, i Pr, t Bu, CF3, CN, F, and one or more hydrogen atoms may be optionally, independently of one another, deuterium, Me, i Pr, t optionally substituted with one or more substituents independently selected from the group consisting of Bu, Ph, CN, CF, or Ph substituted with F; wherein the fused ring system thus formed, consisting of the structure according to formula D1 and the connected rings formed by adjacent substituents, contains a total of 13 to 30 ring atoms, preferably 16 to 30 ring atoms; a is an integer and is either 0 or 1; b is an integer, in each case 0 or 1, where both b are always identical, where when integer a is 1, both integers b are 0, and when both integers b are 1, integer a is 0, Q 1 are in each case independently of one another: nitrogen (N), CR 6 and CR 7 and wherein in formula AI, two adjacent groups Q 1 are not both nitrogen (N), and here, the group Q of the chemical formula AI 1 If none of the groups is nitrogen (N), the group Q 1 At least one of them is CR 7 and Q 2 are in each case independently of one another nitrogen (N) and CR 6 with the proviso that in formulae A-II and A-III, at least one group Q 2 is nitrogen (N) and two adjacent groups Q 2 are not both nitrogen (N), R 6 and R 8 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, OPh, N(Ph)2, Si(Me)3, Si(Ph)3, CF3, CN, F, Me, i Pr, t Bu, One or more hydrogen atoms may be optionally, independently of one another, deuterium, Me, i Pr, t Ph substituted with Bu and Ph, and One or more hydrogen atoms may be optionally, independently of one another, deuterium, Me, i Pr, t Bu and Ph substituted carbazolyl, R7 are, in each occurrence independently of one another, selected from the group consisting of CN, CF3 and a structure according to the chemical formula EWG-I: [ka] ...Chemical formula EWG-I where R X is R 6 where at least one R X The group is CN or CF3, wherein in Formula A-IV, two adjacent groups R 8 optionally forms an aromatic ring, which is fused to the structure of formula A-IV, and contains hydrogen, deuterium, Me, i Pr, t Bu, CF3, CN, F, and one or more hydrogen atoms may be optionally, independently of one another, deuterium, Me, i Pr, t optionally substituted with one or more substituents independently selected from the group consisting of Bu, Ph, CN, CF, or Ph substituted with F; wherein optionally the fused ring system thus formed contains a total of 9 to 18 ring atoms; Q 3 are in each case independently of one another nitrogen (N) and CR 12 , with the proviso that at least one Q 3 is nitrogen (N), R 11 are, in each occurrence independently of one another, the attachment position of a single bond linking the first or second chemical moiety to a third chemical moiety, or are, independently of one another, selected from the group consisting of: Hydrogen, deuterium, Me, i Pr, t Bu, One or more hydrogen atoms may be optionally, independently of one another, deuterium, Me, i Pr, t Ph substituted with Bu and Ph, R 12 is R 6 It is defined as wherein the maximum number of first and second chemical moieties attached to the third chemical moiety is limited by the number of attachment positions available on the third chemical moiety (i.e., the number of substituents R 11 (Preferably, the number of each TADF material E is limited only by the above-mentioned definition) B comprises at least one first chemical moiety, at least one second chemical moiety, and exactly one third chemical moiety).

[0299] In a more preferred embodiment of the present invention, Z 2 are, in each case independently of one another, a direct bond, a CR 1 R 2 , C=O, NR 1 , O, SiR 1 R 2 , S, S(O) and S(O)2; R a , R b and R d are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, N(Ph)2, Si(Me)3, Si(Ph)3, CF3, CN, Me, i Pr, t Bu, One or more hydrogen atoms may be optionally, independently of one another, deuterium, Me, i Pr, t Ph substituted with Bu and Ph, and One or more hydrogen atoms may be optionally, independently of one another, deuterium, Me, i Pr, t Bu and Ph substituted carbazolyl, R 1 and R 2 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, Me, i Pr, t Bu, One or more hydrogen atoms may be optionally, independently of one another, deuterium, Me, i Pr, t Ph substituted with Bu and Ph, wherein optionally, the optional substituent Ra , R b , R d , R 1 and R 2 are, independently of each other, R a , R b , R d , R 1 and R 2 together with one or more adjacent substituents selected from: wherein the ring system thus formed optionally contains hydrogen, deuterium, Me, i Pr, t Bu, CF3, CN, F, and one or more hydrogen atoms may be optionally, independently of one another, deuterium, Me, i Pr, t optionally substituted with one or more substituents independently selected from the group consisting of Bu, Ph, CN, CF, or Ph substituted with F; wherein the fused ring system thus formed, consisting of the structure according to formula D1 and the connected rings formed by adjacent substituents, contains a total of 13 to 30 ring atoms, preferably 16 to 30 ring atoms; a is an integer and is either 0 or 1; b is an integer, in each case 0 or 1, where both b are always identical, where when integer a is 1, both integers b are 0, and when both integers b are 1, integer a is 0, Q 1 are in each case independently of one another: nitrogen (N), CR 6 and CR 7 and wherein in formula AI, two adjacent groups Q 1 are not both nitrogen (N), and here, the group Q of the chemical formula AI 1 If none of the groups is nitrogen (N), the group Q 1 At least one of them is CR 7 and Q 2 are in each case independently of one another nitrogen (N) and CR 6with the proviso that in formulae A-II and A-III, at least one group Q 2 is nitrogen (N) and two adjacent groups Q 2 are not both nitrogen (N), R 6 and R 8 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, N(Ph)2, Si(Me)3, Si(Ph)3, Me, i Pr, t Bu, One or more hydrogen atoms may be optionally, independently of one another, deuterium, Me, i Pr, t Ph substituted with Bu and Ph, and One or more hydrogen atoms may be optionally, independently of one another, deuterium, Me, i Pr, t Bu and Ph substituted carbazolyl, R 7 are, in each occurrence independently of one another, selected from the group consisting of CN, CF3 and a structure according to the chemical formula EWG-I: [ka] ...Chemical formula EWG-I where R X is R 6 is defined as CN or CF3, provided that at least one R X The group is CN or CF3, wherein in Formula A-IV, two adjacent groups R 8 optionally forms an aromatic ring, which is fused to the structure of formula A-IV, and contains hydrogen, deuterium, Me, i Pr, t Bu, CF3, CN, F, and one or more hydrogen atoms may be optionally, independently of one another, deuterium, Me, i Pr, t optionally substituted with one or more substituents independently selected from the group consisting of Bu, Ph, CN, CF, or Ph substituted with F; wherein optionally the fused ring system thus formed contains a total of 9 to 18 ring atoms; Q 3 are in each case independently of one another nitrogen (N) and CR 12 , with the proviso that at least one Q 3 is nitrogen (N), R 11 are, in each occurrence independently of one another, the attachment position of a single bond linking the first or second chemical moiety to a third chemical moiety, or are, independently of one another, selected from the group consisting of: Hydrogen, deuterium, Me, i Pr, t Bu, and One or more hydrogen atoms may be optionally, independently of one another, deuterium, Me, i Pr, t Ph substituted with Bu and Ph, R 12 is R 6 It is defined as wherein the maximum number of first and second chemical moieties attached to the third chemical moiety is limited by the number of attachment positions available on the third chemical moiety (i.e., the number of substituents R 11 (Preferably, the number of each TADF material E is limited only by the above-mentioned definition) B comprises at least one first chemical moiety, at least one second chemical moiety, and exactly one third chemical moiety).

[0300] In a particularly preferred embodiment of the present invention, Z 2 are, in each case independently of one another, a direct bond, a CR 1 R 2 , C=O, NR 1 , O, SiR 1 R 2 , S, S(O) and S(O)2; R a , R b and R d are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, CF3, CN, Me, i Pr,t Bu, and One or more hydrogen atoms may be optionally, independently of one another, deuterium, Me, i Pr, t Ph substituted with Bu and Ph, R 1 and R 2 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, Me, i Pr, t Bu, and One or more hydrogen atoms may be optionally, independently of one another, deuterium, Me, i Pr, t Ph substituted with Bu and Ph, wherein optionally, the optional substituent R a , R b , R d , R 1 and R 2 are, independently of each other, R a , R b , R d , R 1 and R 2 together with one or more adjacent substituents selected from: wherein the ring system thus formed optionally contains hydrogen, deuterium, Me, i Pr, t Bu, CF3, and one or more hydrogen atoms may be optionally, independently of one another, deuterium, Me, i Pr, t optionally substituted with one or more substituents independently selected from the group consisting of Bu and Ph substituted by Ph; wherein the fused ring system thus formed, consisting of the structure according to formula D1 and the rings formed and connected by adjacent substituents, contains a total of 13 to 30 ring atoms, preferably 16 to 30 ring atoms; a is an integer and is either 0 or 1; b is an integer, in each case 0 or 1, where both b are always identical, where when integer a is 1, both integers b are 0, and when both integers b are 1, integer a is 0, Q 1 are in each case independently of one another: nitrogen (N), CR 6 and CR 7 and wherein in formula AI, two adjacent groups Q 1 are not both nitrogen (N), and here, the group Q of the chemical formula AI 1 If none of the groups is nitrogen (N), the group Q 1 At least one of them is CR 7 and Q 2 are in each case independently of one another nitrogen (N) and CR 6 with the proviso that in formulae A-II and A-III, at least one group Q 2 is nitrogen (N) and two adjacent groups Q 2 are not both nitrogen (N), R 6 and R 8 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, N(Ph)2, Me, i Pr, t Bu, One or more hydrogen atoms may be optionally, independently of one another, deuterium, Me, i Pr, t Ph substituted with Bu and Ph, Carbazolyl, wherein one or more hydrogen atoms are optionally, independently of one another, deuterium, Me, i Pr, t substituted with Bu and Ph, R 7 are, in each occurrence independently of one another, selected from the group consisting of CN, CF3 and a structure according to the chemical formula EWG-I: [ka] ...Chemical formula EWG-I where R X is R 6is defined as CN or CF3, provided that at least one R X The group is CN or CF3, wherein in Formula A-IV, two adjacent groups R 8 optionally forms an aromatic ring, which is fused to the structure of formula A-IV, and contains hydrogen, deuterium, Me, i Pr, t Bu, CF3, CN, F, and one or more hydrogen atoms may be optionally, independently of one another, deuterium, Me, i Pr, t optionally substituted with one or more substituents independently selected from the group consisting of Bu, Ph, CN, CF, or Ph substituted with F; wherein optionally the fused ring system thus formed contains a total of 9 to 18 ring atoms; Q 3 are in each case independently of one another nitrogen (N) and CR 12 , with the proviso that at least one Q 3 is nitrogen (N), R 11 are, in each occurrence independently of one another, the attachment position of a single bond linking the first or second chemical moiety to a third chemical moiety, or are, independently of one another, selected from the group consisting of: Hydrogen, deuterium, Me, i Pr, t Bu, and One or more hydrogen atoms may be optionally, independently of one another, deuterium, Me, i Pr, t Ph substituted with Bu and Ph, R 12 is R 6 It is defined as wherein the maximum number of first and second chemical moieties attached to the third chemical moiety is limited by the number of attachment positions available on the third chemical moiety (i.e., the number of substituents R 11 (Preferably, the number of each TADF material E is limited only by the above-mentioned definition) B comprises at least one first chemical moiety, at least one second chemical moiety, and exactly one third chemical moiety).

[0301] In a preferred embodiment of the present invention, a is always 1 and b is always 0.

[0302] In a preferred embodiment of the present invention, Z 2 is a direct bond in each case.

[0303] In a preferred embodiment of the present invention, R a is hydrogen in each case.

[0304] In a preferred embodiment of the present invention, R a and R d is hydrogen in each case.

[0305] In a preferred embodiment of the present invention, Q 3 is nitrogen (N) in each case.

[0306] In one embodiment of the present invention, in formula EWG-I, at least one group R X is CN.

[0307] In a preferred embodiment of the invention, in formula EWG-I, exactly one group R X is CN.

[0308] In a preferred embodiment of the present invention, in formula EWG-I, exactly one R X The group is CN, and in the formula EWG-I, R X The group is not CF3.

[0309] Examples of first chemical moieties according to the present invention are shown below, but this does not mean that the present invention is limited to these examples: [ka] [ka] [ka] [ka] [ka] [ka] [ka] [ka] [ka] [ka] [ka] [ka] [ka] [ka] [ka] [ka] Here, the above definitions apply.

[0310] Examples of second chemical moieties according to the present invention are shown below, but this does not mean that the present invention is limited to these examples: [ka] [ka] [ka] [ka] [ka] [ka] [ka] [ka] [ka] [ka] Here, the above definitions apply.

[0311] In a preferred embodiment of the present invention, each TADF material E B is the chemical formula E B -I, E B -NO B -III, E B -IV, E B -V, E B -VI, E B -VII, E B-VIII, E B -IX, E B -X and E B -XI: [ka] ...Chemical formula E B -I [ka] ...Chemical formula E B -II [ka] ...Chemical formula E B -III [ka] ...Chemical formula E B -IV [ka] ...Chemical formula E B -V [ka] ...Chemical formula E B -VI [ka] ...Chemical formula E B -VII [ka] ...Chemical formula E B -VIII [ka] ...Chemical formula E B -IX [ka] ...Chemical formula E B -X [ka] ...Chemical formula E B -XI where: R 13 is R 11 where R 13 is not the attachment point of a single bond linking the first or second chemical moiety to a third chemical moiety, R Y is selected from CN and CF3, or R Y comprises or consists of a structure according to the following chemical formula BN-I: [ka] ...Chemical formula BN-I This is because the single bond represented by the dotted line gives the chemical formula E B -I, E B -NO B -III, E B -IV, E B -V, E B -VI, E B -VII, E B -VIII or E B -IX, where exactly one R BN The group is CN, and the other two R BN The groups are both hydrogen (H), Otherwise, the above definitions apply.

[0312] In a preferred embodiment of the present invention, R 13 is hydrogen in each case.

[0313] In one embodiment of the present invention, R Yis CN in each case.

[0314] In one embodiment of the present invention, R Y is CF3 in each case.

[0315] In one embodiment of the present invention, R Y is in each case the structure represented by the chemical formula BN-I.

[0316] In a preferred embodiment of the present invention, R Y are, in each occurrence, independently selected from CN and structures of the formula BN-I.

[0317] In a preferred embodiment of the present invention, each TADF material E B is a chemical formula E to which the above definitions apply. B -I, E B -NO B -III, E B -IV, E B -V, E B -VI, E B -VII and E B -X.

[0318] In a preferred embodiment of the present invention, each TADF material E B is a chemical formula E to which the above definitions apply. B -I, E B -NO B -III, E B -V and E B -X.

[0319] TADF material E for use in an organic electroluminescent device according to the present invention B Examples of TADF materials E are shown below, but this does not mean that only the examples shown are suitable TADF materials E in the context of the present invention. B This does not mean that.

[0320] Chemical formula E BTADF materials by E B Non-limiting examples are shown below: [ka] [ka] [ka] [ka] [ka] [ka] [ka] [ka] [ka]

[0321] Chemical formula E B TADF Material E by TADF II B Non-limiting examples are shown below: [ka] [ka] [ka] [ka] [ka]

[0322] Chemical formula E B TADF Materials E by TADF-III B Non-limiting examples are shown below: [ka] [ka] [ka] [ka]

[0323] Chemical formula E B TADF Material E by -IV B Non-limiting examples are shown below: [ka]

[0324] Chemical formula E B TADF materials E by -V B Non-limiting examples are shown below: [ka]

[0325] Chemical formula E B TADF materials with VI B Non-limiting examples are shown below: [ka]

[0326] Chemical formula E B TADF materials E by -VII B Non-limiting examples are shown below: [ka]

[0327] Chemical formula E B TADF materials E by .VIII B Non-limiting examples are shown below: [ka]

[0328] Chemical formula E B TADF Materials E by IX B Non-limiting examples are shown below: [ka] [ka]

[0329] Chemical formula E B TADF Materials E by -X B Non-limiting examples are shown below: [ka] [ka]

[0330] Chemical formula E B TADF Materials E by XI B Non-limiting examples are shown below: [ka]

[0331] TADF material E BThe synthesis of is accomplished via standard reactions and reaction conditions well known to those skilled in the art. Generally, in the first step, a coupling reaction, preferably a palladium-catalyzed coupling reaction, is carried out to form a compound of formula E B -III, E B -IV and E B TADF material E by one of -V B The synthesis of the following is exemplified below: [ka]

[0332] E1 is any boronic acid (R B =H) or the corresponding boronic ester (R B = alkyl or aryl), and in particular, two R B can form a ring to provide, for example, a boronic acid pinacol ester. E2 is used as the second reactant, where Hal represents a halogen, which can be I, Br, or Cl, but is preferably Br. The reaction conditions for such palladium-catalyzed coupling reactions are known to those skilled in the art, for example, from WO 2017 / 005699, and it is known that the reactive groups of E1 and E2 can be exchanged as shown below to optimize the reaction yield: [ka]

[0333] In the second step, the TADF molecule is obtained via reaction of the nitrogen heterocycle with an aryl halide, preferably an aryl fluoride E3, in a nucleophilic aromatic substitution. Typical conditions include the use of a base, such as tripotassium phosphate or sodium hydride, in an aprotic polar solvent, such as dimethyl sulfoxide (DMSO) or N,N-dimethylformamide (DMF). [ka]

[0334] In particular, the donor molecule E4 may be a 3,6-substituted carbazole (e.g., 3,6-dimethylcarbazole, 3,6-diphenylcarbazole, 3,6-di-tert-butylcarbazole), a 2,7-substituted carbazole (e.g., 2,7-dimethylcarbazole, 2,7-diphenylcarbazole, 2,7-di-tert-butylcarbazole), a 1,8-substituted carbazole (e.g., 1,8-dimethylcarbazole, 1,8-diphenylcarbazole, 1 ,8-di-tert-butylcarbazole), 1-substituted carbazoles (e.g., 1-methylcarbazole, 1-phenylcarbazole, 1-tert-butylcarbazole), 2-substituted carbazoles (e.g., 2-methylcarbazole, 2-phenylcarbazole, 2-tert-butylcarbazole), or 3-substituted carbazoles (e.g., 3-methylcarbazole, 3-phenylcarbazole, 3-tert-butylcarbazole).

[0335] Alternatively, halogen-substituted carbazoles, especially 3-bromocarbazole, are also used as E4.

[0336] In a subsequent reaction, a boronic ester or boronic acid functional group can be illustratively introduced at the position of one or more halogen substituents introduced via E4 to generate the corresponding carbazol-3-yl-boronic ester or carbazol-3-yl-boronic acid, for example, via reaction with (pinacolato)diboron (CAS No. 73183-34-3). Then, a corresponding halogenated reactant, for example, R a -Hal, preferably R a -Cl and R a In place of the boronic ester group or the boronic acid group, one or more substituents R a , R b or R d can be introduced.

[0337] Alternatively, the substituent R a [R a -B(OH)2], R b [R b-B(OH)2] or R d [R d -B(OH)2] with a boronic acid or a corresponding boronic ester, and one or more substituents R in place of one or more halogen substituents introduced via DH. a , R b or R d can be introduced.

[0338] In addition, TADF materials E B can be obtained similarly. B can be obtained by any alternative synthetic route suitable for the purpose.

[0339] An alternative synthetic route also involves the introduction of the nitrogen heterocycle via copper or palladium catalyzed coupling onto an aryl halide or aryl pseudohalide, preferably an aryl bromide, aryl iodide, aryl triflate or aryl tosylate.

[0340] Phosphorescent material P B In the context of the present invention, the phosphorescent material P B utilizes the intramolecular spin-orbit interaction (heavy atom effect) induced by metal atoms to obtain emission from triplets.

[0341] In general, it is understood that all phosphorescent complexes used in organic electroluminescent devices in the state of the art can also be used in the organic electroluminescent devices according to the invention.

[0342] Phosphorescent material P used in organic electroluminescence devices BThose skilled in the art know that phosphorescent complexes are complexes of Ir, Pd, Pt, Au, Os, Eu, Ru, Re, Ag, and Cu, preferably Ir, Pt, and Pd, more preferably Ir and Pt, in the context of the present invention. Those skilled in the art know what materials are suitable as phosphorescent materials in organic electroluminescent devices and how to synthesize them. Those skilled in the art are also familiar with the design principles of phosphorescent complexes for use in organic electroluminescent devices and know how to adjust the emission of the complexes by structural changes.

[0343] See the following examples: C.-L. Ho, H. Li, W.-Y. Wong, Journal of Organometallic Chemistry 2014, 751, 261, DOI: 10.1016 / j.jorganchem.2013.09.035; T. Fleetham, G. Li, J. Li, Advanced Science News 2017, 29, 1601861, DOI: 10.1002 / adma.201601861; A.R.B. Musoff, A.J. Huckaba, M.K. Nazeeruddin, Topics in Current Chemistry(Z) 2017, 375:39, 1, DOI: 10.1007 / s41061-017-0126-7; T.-Y. Li, J. Wuc, Z.-G. Wua, Y.-X.Zheng, J.-L.Zuo, Y.Pan, Coordination Chemistry Reviews 2018, 374, 55, DOI: 10.1016 / j.ccr.2018.06.014.

[0344] For example, US2020274081(A1), US20010019782(A1), US20020034656(A1), US20030138657(A1), US2005123791(A1), US20060065890(A1), US20060134462(A1), US20070034863(A1), US20070111026(A1), US2007034863(A1), US2007138437(A1), US20080020237(A1), US20080297033(A1), US2008210930( A1), US20090115322(A1), US2009104472(A1), US20100244004(A1), US201 0105902(A1), US20110057559(A1), US2011215710(A1), US2012292601(A1 ), US2013165653(A1), US20140246656(A1), US20030068526(A1), US20050 123788(A1), US2005260449(A1), US20060127696(A1), US20060202194(A1 ), US20070087321(A1), US20070190359(A1), US2007104979(A1), US2007224450(A1), US20080233410(A1), US200805851(A1), US20090039776(A1) , US20090179555(A1), US20100090591(A1), US20100295032(A1), US20030 072964(A1), US20050244673(A1), US20060008670(A1), US20060134459(A 1), US20060251923(A1), US20070103060(A1), US20070231600(A1), US200 7104980(A1), US2007278936(A1), US20080261076(A1), US2008161567(A1 ), US20090108737(A1), US2009085476(A1), US20100148663(A1), US20101 02716(A1), US2010270916(A1), US20110204333(A1), US2011285275(A1),US2013033172(A1), US2013334521(A1), US2014103305(A1), US2003068536(A1), US2003085646(A1), US2006228581(A1), US2006197077(A1), US2011114922(A1), US2011114922(A1), US2003054198(A1) and EP2730583(A1) are known in the context of the present invention as phosphorescent materials P, B This application discloses phosphorescent materials that can be used in the organic electroluminescent devices described in one of the named references.

[0345] As shown in US2020274081(A1), examples of phosphorescent complexes for use in organic electroluminescent devices such as those of the present invention include the complexes shown below. Again, it is understood that the present invention is not limited to these examples.

[0346] [ka] [ka] JPEG0007828334000136.jpg214143 [ka] [ka] [ka] [ka] [ka] [ka] [ka] [ka]

[0347] As mentioned above, the skilled person will recognize that any phosphorescent complex used in the state of the art can be considered as a phosphorescent material P in the context of the present invention. B It can be recognized that it is suitable as a

[0348] In one embodiment of the present invention, each phosphorescent material P B contains iridium (Ir).

[0349] In one embodiment of the present invention, at least one phosphorescent material P B , preferably each phosphorescent material P B is an organometallic complex containing iridium (Ir) or platinum (Pt).

[0350] In one embodiment of the present invention, at least one phosphorescent material P B , preferably each phosphorescent material P B is an organometallic complex containing iridium (Ir).

[0351] In one embodiment of the present invention, at least one phosphorescent material P B , preferably each phosphorescent material P B is an organometallic complex containing platinum (Pt).

[0352] In addition, phosphorescent material P B Non-limiting examples of compounds represented by the general chemical formula P B -I, including compounds represented by: [ka] ...Chemical formula P B -I .

[0353] Chemical formula P B In I, M is selected from the group consisting of Ir, Pt, Pd, Au, Eu, Ru, Re, Ag and Cu; n is an integer from 1 to 3, X 2 and Y 1 together in each case independently of one another form a bidentate monoanionic ligand.

[0354] In one embodiment of the present invention, each phosphorescent material P B is represented by the following chemical formula P B -I contains or consists of a structure: [ka] ...Chemical formula P B -I wherein M is selected from the group consisting of Ir, Pt, Pd, Au, Eu, Ru, Re, Ag, and Cu; n is an integer from 1 to 3, X 2 and Y 1 together in each case independently of one another form a bidentate monoanionic ligand.

[0355] Chemical formula P B An example of a compound represented by -I is the compound represented by the following general chemical formula P B -II or general chemical formula P B -III, including compounds represented by: [ka] ...Chemical formula P B -II [ka] ...Chemical formula PB -III Chemical formula P B -II and P B In -III, X' is an aromatic ring carbon (C) bonded to M, and Y' is a ring that is nitrogen (N) coordinated to M to form a ring.

[0356] X' and Y' can be bonded together to form a new ring. B -III, Z 3 is a bidentate ligand with two oxygen atoms (O). B -II and P B In -III, M is preferably Ir from the viewpoint of high efficiency and long life.

[0357] Chemical formula P B -II and P B In -III, the aromatic ring X' is, for example, C-C 30 Aryl, preferably C-C 16 Aryl, more preferably C-C 12 Aryl, particularly preferably C-C 10 aryl, where X′ in each case optionally represents one or more substituents R E is replaced by

[0358] Chemical formula P B -II and P B In -III, Y' is, for example, C2-C 30 Heteroaryl, preferably C-C 25 Heteroaryl, more preferably C-C 20 Heteroaryl, more preferably C-C 15 Heteroaryl, particularly preferably C-C 10 heteroaryl, where Y′ in each occurrence optionally represents one or more substituents R E Y' may also be optionally substituted with, for example, one or more substituents R E It is also a C1-C5 heteroaryl substituted with

[0359] Chemical formula PB -II and P B In -III, a bidentate ligand Z having two oxygen atoms (O) 3 For example, C2-C 30 Bidentate ligands, preferably C2-C with two oxygens 25 Bidentate ligands, more preferably C2-C with two oxygens 20 Bidentate ligands, more preferably C2-C with two oxygens 15 Bidentate ligands, particularly preferred are C2-C 10 is a bidentate ligand, where Z 3 optionally in each case one or more substituents R E Also, Z 3 may, for example, optionally contain one or more substituents R E It is also a C2-C5 bidentate ligand with two oxygens substituted with

[0360] R E are, in each occurrence independently of one another, selected from the group consisting of: Hydrogen, deuterium, N(R 5E )2, OR 5E , S.R. 5E , Si(R 5E )3, CF3, CN, halogens, C1-C 40 Alkyl, This is a group consisting of one or more substituents R 5E wherein one or more non-adjacent CH groups are optionally substituted with R 5E C=CR 5E , C≡C, Si(R 5E )2, Ge(R 5E )2, Sn(R 5E )2, C=O, C=S, C=Se, C=NR 5E , P(=O)(R 5E ), SO, SO2, NR 5E , O, S or CONR 5E is selectively substituted with C1-C 40 thioalkoxy, This is a group consisting of one or more substituents R 5Ewherein one or more non-adjacent CH groups are optionally substituted with R 5E C=CR 5E , C≡C, Si(R 5E )2, Ge(R 5E )2, Sn(R 5E )2, C=O, C=S, C=Se, C=NR 5E , P(=O)(R 5E ), SO, SO2, NR 5E , O, S or CONR 5E is selectively substituted with C6-C 60 aryl, This is a group consisting of one or more substituents R 5E is optionally substituted with, and C3-C 57 heteroaryl, This is a group consisting of one or more substituents R 5E is selectively substituted with

[0361] R 5E are, in each occurrence independently of one another, selected from the group consisting of: Hydrogen, deuterium, N(R 6E )2, OR 6E , S.R. 6E , Si(R 6E )3, CF3, CN, F, C1-C 40 Alkyl, This is a group consisting of one or more substituents R 6E wherein one or more non-adjacent CH groups are optionally substituted with R 6E C=CR 6E , C≡C, Si(R 6E )2, Ge(R 6E )2, Sn(R 6E )2, C=O, C=S, C=Se, C=NR 6E , P(=O)(R 6E ), SO, SO2, NR 6E , O, S or CONR 6E is selectively substituted with C6-C 60 aryl, This is a group consisting of one or more substituents R 6E is optionally substituted with, and C3-C57 heteroaryl, This is a group consisting of one or more substituents R 6E is selectively substituted with

[0362] R 6E are, in each occurrence independently of one another, selected from the group consisting of: Hydrogen, deuterium, OPh, CF3, CN, F, C1-C5 alkyl, wherein one or more hydrogen atoms are optionally replaced, independently of one another, by deuterium, CN, CF or F; C1-C5 alkoxy, wherein one or more hydrogen atoms are optionally replaced, independently of one another, by deuterium, CN, CF or F; C1-C5 thioalkoxy, wherein one or more hydrogen atoms are optionally replaced, independently of one another, by deuterium, CN, CF or F; C6-C 18 aryl, which is optionally substituted with one or more C1-C5 alkyl substituents; C3-C 17 heteroaryl, which is optionally substituted with one or more C1-C5 alkyl substituents; N(C6-C 18 aryl)2, N(C3-C 17 heteroaryl)2, and N(C3-C 17 Heteroaryl)(C6-C 18 aryl).

[0363] Substituent R E , R 5E or R 6E may optionally be one or more substituents R E , R 5E , R 6E and / or X', Y' and Z 3 together can form monocyclic or polycyclic, aliphatic, aromatic, heteroaromatic and / or benzo-fused ring systems.

[0364] Chemical formula P B Examples of compounds represented by -II include Ir(ppy)3, Ir(ppy)2(acac), Ir(mppy)3, Ir(PPy)2(m-bppy), BtpIr(acac), Ir(btp)2(acac), Ir(2-phq)3, Hex-Ir(phq)3, Ir(fbi)2(acac), fac-tris(2-(3-p-xylyl)phenyl)pyridine iridium(III), Eu(dbm)3(Phen), Ir(piq)3, Ir(piq)2(acac), Ir (Fiq)2(acac), Ir(Flq)2(acac), Ru(dtb-bpy)3·2(PF6), Ir(2-phq)3, Ir(BT)2(acac), Ir(DMP)3, Ir(Mpq)3, Ir(phq)2tpy, fac- There are Ir(ppy)2Pc, Ir(dp)PQ2, Ir(Dpm)(Piq)2, Hex-Ir(piq)2(acac), Hex-Ir(piq)3, Ir(dmpq)3, Ir(dmpq)2(acac), FPQIrpic, etc.

[0365] Chemical formula P B Another example of the compound represented by formula P B -II-1 to P B -II-11, in which "Me" represents a methyl group. [ka] [ka] [ka]

[0366] Chemical formula P B Another example of the compound represented by formula P B -III-1 to P B -III-6, in which "Me" represents a methyl group.

[0367] [ka]

[0368] In addition, the iridium complexes described in US2003017361(A1), US2004262576(A1), WO2010027583(A1), US2019245153(A1), US2013119354(A1), and US2019233451(A1) can be used. From the viewpoint of high efficiency of phosphorescent materials, Ir(ppy)3 and Hex-Ir(ppy)3 are often used for green emission.

[0369] Small FWHM emitter S B The small full width at half maximum (FWHM) emitter S according to the present invention B Generally, S is any emitter having an emission spectrum exhibiting a FWHW of 0.25 eV or less (≦0.25) measured from a spin-coated film having 1 to 5 wt. % of the emitter, particularly 2 wt. % of the emitter, in poly(methyl methacrylate) PMMA at room temperature (i.e., (approximately) 20° C.). Alternatively, a small FWHM emitter S B The emission spectra of the emitter S are typically measured at room temperature (i.e., approximately 20°C) in dichloromethane or toluene at 0.001–0.2 mg / mL. B can be measured in a solution.

[0370] In a preferred embodiment of the present invention, a small FWHM emitter S B is 1 to 5 wt. %, especially 2 wt. %, of the emitter S in PMMA at room temperature. B The small FWHM emitter S is any emitter having an emission spectrum exhibiting a FWHM of ≦0.24 eV, more preferably ≦0.23 eV, and even more preferably ≦0.22 eV, ≦0.21 eV, or ≦0.20 eV, as measured from a spin-coated film having a B The emission spectra of the emitter S are typically measured at room temperature (i.e., approximately 20°C) in dichloromethane or toluene at 0.001–0.2 mg / mL.B In another embodiment of the present invention, each small FWHM emitter S B indicates a FWHM of ≦0.19 eV, ≦0.18 eV, ≦0.17 eV, ≦0.16 eV, ≦0.15 eV, ≦0.14 eV, ≦0.13 eV, ≦0.12 eV, or ≦0.11 eV.

[0371] In one embodiment of the present invention, each small FWHM emitter S B At room temperature (1 to 5 wt. %, in particular 2 wt. % of the emitter S B When measured on PMMA, it emits light with a maximum emission in the wavelength range of 440 nm to 470 nm.

[0372] In one embodiment of the present invention, each small FWHM emitter S B At room temperature (1 to 5 wt. %, in particular 2 wt. % of the emitter S B When measured on PMMA, it emits light with a maximum emission in the wavelength range of 500 nm to 560 nm.

[0373] In one embodiment of the present invention, each small FWHM emitter S B At room temperature (1 to 5 wt. %, in particular 2 wt. % of the emitter S B When measured on PMMA, it emits light with an emission maximum in the wavelength range of 610 nm to 665 nm.

[0374] In one embodiment of the present invention, each small FWHM emitter S B 0.001–0.2 mg / mL of emitter S in dichloromethane or toluene at room temperature (i.e., approximately 20 °C). B It emits light with an emission maximum in the wavelength range of 440 nm to 470 nm when measured at 1000 kJ / s.

[0375] In one embodiment of the present invention, each small FWHM emitter S B 0.001–0.2 mg / mL of emitter S in dichloromethane or toluene at room temperature (i.e., approximately 20 °C). BIt emits light with a maximum emission in the wavelength range of 500 nm to 560 nm when measured at 1000 kJ / s.

[0376] In one embodiment of the present invention, each small FWHM emitter S B 0.001–0.2 mg / mL of emitter S in dichloromethane or toluene at room temperature (i.e., approximately 20 °C). B It emits light with an emission maximum in the wavelength range of 610 nm to 665 nm when measured at 1000 kJ / s.

[0377] TADF material E contained in the light-emitting layer B of the organic electroluminescence device according to the present invention B The TADF material E contained in the light-emitting layer B of the organic electroluminescent device according to the present invention is also an emitter having an emission spectrum with a FWHM of 0.25 eV or less (≦0.25 eV). B can also exhibit emission maxima within the aforementioned wavelength ranges (ie, 400 nm to 470 nm, 500 nm to 560 nm, 610 nm to 665 nm).

[0378] In one embodiment of the present invention, one of the relationships represented by the following equations (23) to (25) applies: 440nm<λ max (S B )<470nm (23) 510nm<λ max (S B )<550nm (24) 610nm<λ max (S B )<665nm (25) where λ max (S B ) is the small FWHM emitter S in the context of the present invention. B shows the maximum luminescence.

[0379] In one embodiment, the aforementioned relationships represented by formulas (23) to (25) apply to materials contained in any one of at least one light-emitting layer B of an organic electroluminescent device according to the present invention. In one embodiment, the aforementioned relationships represented by formulas (23) to (25) apply to materials contained in the same light-emitting layer B of an organic electroluminescent device according to the present invention.

[0380] In a preferred embodiment of the present invention, each small FWHM emitter S B is an organic emitter, which means in the context of the present invention that it does not contain any transition metals. Preferably, the small FWHM emitter S according to the present invention B is composed primarily of hydrogen (H), carbon (C), nitrogen (N) and boron (B), but may also contain, for example, oxygen (O), silicon (Si), fluorine (F) and bromine (Br).

[0381] In a preferred embodiment of the present invention, a small FWHM emitter S B is a fluorescent emitter, which in the context of the present invention means that the emitter is capable of emitting light at room temperature upon electronic excitation (e.g. in an optoelectronic device according to the present invention), wherein the emissive excited state is a singlet state.

[0382] In one embodiment of the present invention, a small FWHM emitter S B At room temperature (1 to 5 wt. %, in particular 2 wt. % of the emitter S B When measured on PMMA, it exhibits a photoluminescence quantum yield (PLQY) of over 50%.

[0383] In a preferred embodiment of the present invention, a small FWHM emitter S B At room temperature (1 to 5 wt. %, in particular 2 wt. % of the emitter S B When measured on PMMA, it exhibits a photoluminescence quantum yield (PLQY) of over 60%.

[0384] In a more preferred embodiment of the present invention, a small FWHM emitter SB At room temperature (1 to 5 wt. %, in particular 2 wt. % of the emitter S B When measured on PMMA, it exhibits a photoluminescence quantum yield (PLQY) of over 70%.

[0385] In an even more preferred embodiment of the present invention, a small FWHM emitter S B At room temperature (1 to 5 wt. %, in particular 2 wt. % of the emitter S B When measured on PMMA, it exhibits a photoluminescence quantum yield (PLQY) of over 80%.

[0386] In a particularly preferred embodiment of the present invention, a small FWHM emitter S B At room temperature (1 to 5 wt. %, in particular 2 wt. % of the emitter S B When measured on PMMA, it exhibits a photoluminescence quantum yield (PLQY) of over 90%.

[0387] In one embodiment of the present invention, a small FWHM emitter S B 0.001–0.2 mg / mL of emitter S in dichloromethane or toluene at room temperature (i.e., approximately 20 °C). B When measured at 1000 kJ / cm², the photoluminescence quantum yield (PLQY) is 50% or more.

[0388] In a preferred embodiment of the present invention, a small FWHM emitter S B 0.001–0.2 mg / mL of emitter S in dichloromethane or toluene at room temperature (i.e., approximately 20 °C). B When measured at 1000 kJ / cm², it exhibits a photoluminescence quantum yield (PLQY) of 60% or more.

[0389] In a more preferred embodiment of the present invention, a small FWHM emitter S B 0.001–0.2 mg / mL of emitter S in dichloromethane or toluene at room temperature (i.e., approximately 20 °C). B When measured at 1000 kJ / cm², it exhibits a photoluminescence quantum yield (PLQY) of 70% or more.

[0390] In an even more preferred embodiment of the present invention, a small FWHM emitter S B 0.001–0.2 mg / mL of emitter S in dichloromethane or toluene at room temperature (i.e., approximately 20 °C). B When measured at 1000 kJ / cm², it exhibits a photoluminescence quantum yield (PLQY) of 80% or more.

[0391] In a particularly preferred embodiment of the present invention, a small FWHM emitter S B 0.001–0.2 mg / mL of emitter S in dichloromethane or toluene at room temperature (i.e., approximately 20 °C). B When measured at 1000 kJ / cm², it exhibits a photoluminescence quantum yield (PLQY) of 90% or more.

[0392] Those skilled in the art will be able to identify small FWHM emitters S that meet the aforementioned requirements or preferred characteristics. B I know how to design.

[0393] In the context of the present invention, a small FWHM emitter S B A suitable class of molecules for providing the above is the well-known 4,4-difluoro-4-bora-3a,4a-diaza-s-indacene (BODIPY)-based materials, whose structural features and applications in organic electroluminescent devices have been extensively studied and are common knowledge to those skilled in the art. The state of the art also indicates how such materials can be synthesized and how to arrive at emitters with specific emission hues.

[0394] See, for example: J. Liao, Y. Wang, Y. 2020, 32(1), 56-70, DOI: 10.1080 / 10610278.2019.1691727; M.Poddar, R.Misra, Coordination Chemistry Reviews 2020, 421, 213462-213483; DOI: 10.1016 / j.ccr.2020.213462.

[0395] Those skilled in the art will also recognize that the BODIPY basic structure shown below is [ka] For example, they are accustomed to the fact that intermolecular π-π interactions and associated self-quenching make them less than ideally suited as emitters in organic electroluminescent devices.

[0396] It is common knowledge to those skilled in the art that by attaching bulky groups as substituents to the aforementioned BODIPY core structure, emitter molecules that are more suitable for organic electroluminescent devices can be achieved. Such bulky groups can be, for example, (among many others) aryl, heteroaryl, alkyl, or alkoxy substituents, or fused polyaromatic or heteroaromatic rings, all of which are optionally substituted. The selection of suitable substituents on the BODIPY core is clear to those skilled in the art and can be easily derived from the state of the art. The same is true for the numerous synthetic routes that have been established for the synthesis and subsequent modification of such molecules.

[0397] See, for example: B. M. Squeo, M. Pasini, Supramolecular Chemistry 2020, 32(1), 56-70, DOI: 10.1080 / 10610278.2019.1691727; M. Poddar, R. Misra, Coordination Chemistry Reviews 2020, 421, 213462-213483; DOI: 10.1016 / j.ccr.2020.213462.

[0398] In the context of the present invention, a small FWHM emitter S B Examples of suitable BODIPY-based emitters are shown below: [ka] [ka] [ka] [ka]

[0399] This indicates that BODIPY derivatives with different structural features than those mentioned above can be used as small FWHM emitters S in the context of the present invention. B It is understood that this does not mean that the BODIPY-derived structures or derivatives thereof disclosed in, for example, US2020251663(A1), EP3671884(A1), US20160230960(A1), and US20150303378(A1) are suitable for use in the present invention as small FWHM emitters S B It is also.

[0400] It is also known to those skilled in the art that by replacing one or both of the fluorine substituents attached to the central boron atom of the BODIPY core structure with an alkoxy or aryloxy group attached via an oxygen atom, preferably optionally substituted with an electron-withdrawing substituent such as fluorine (F) or trifluoromethyl (CF), an emitter for an organic electroluminescent device can be achieved. Such molecules are disclosed, for example, in US2012037890(A1), and those skilled in the art will recognize that such BODIPY-related compounds are suitable small FWHM emitters S in the context of the present invention. B Examples of such emitter molecules are shown below, because only the structures shown below are suitable small FWHM emitters S in the context of the present invention. B does not mean that: [ka]

[0401] Also, the BODIPY-related boron-containing emitters disclosed in US20190288221(A1) are suitable for use in accordance with the present invention as small FWHM emitters S B The present invention provides a group of emitters capable of providing:

[0402] In the context of the present invention, a small FWHM emitter S B Another class of molecules suitable for providing NRCT are near-range charge-transfer (NRCT) emitters.

[0403] Typical NRCT emitters have been described in the literature as exhibiting delayed components in their time-resolved photoluminescence spectra, indicating short-range HOMO-LUMO separation. See for example: T. Hatakeyama, K. Shiren, K. Nakajima, S. Nomura, S. Nakatsuka, K. Kinoshita, J. Ni, Y. Ono, and T. Ikuta, Advanced Materials 2016, 28(14), 2777, DOI: 10.1002 / adma.201505491.

[0404] A typical NRCT emitter exhibits only one emission band in the emission spectrum, whereas a typical fluorescent emitter exhibits multiple unique emission bands due to vibrational progression.

[0405] Those skilled in the art will understand the concept of a small FWHM emitter S in the context of the present invention. B It is known how to design and synthesize NRCT emitters suitable as small FWHM emitters S in the context of the present invention. For example, the emitter disclosed in EP 3109253 (A1) is B It is also used as.

[0406] Also, for example, US2014058099(A1), US2009295275(A1), US2012319052(A1), EP2182040(A2), US2018069182(A1), US2019393419(A1), US2020006671(A1), US2020098991(A1), US2020176684(A1) , US2020161552(A1), US2020227639(A1), US2020185635(A1), EP3686206(A1), EP3686206(A1), WO2020217229(A1), WO2020208051(A1) and US2020328351(A1) disclose small FWHM emitters S for use in accordance with the present invention. B The present invention discloses emitter materials suitable as:

[0407] In the context of the present invention, a small FWHM emitter S B One group of emitters that can be used are boron (B)-containing emitters that include or consist of a structure according to the following formula DABNA-I: [ka] Chemical formula: DABNA-I where: each of ring A', ring B', and ring C' is independently an aromatic or heteroaromatic ring containing 5 to 24 ring atoms, wherein in the case of a heteroaromatic ring, 1 to 3 ring atoms are, independently of each other, heteroatoms selected from N, O, S, and Se; where: In each aromatic or heteroaromatic ring A', B' and C', one or more hydrogen atoms may optionally be independently substituted by a substituent R DABNA-1 which is selected, in each occurrence independently from one another, from the group consisting of: Deuterium, N(R DABNA-2 )2, OR DABNA-2 , S.R. DABNA-2 , Si(R DABNA-2 )3, B(OR DABNA-2 )2, OSO2R DABNA-2 , CF3, CN, halogens (F, Cl, Br, I), C1-C 40 Alkyl, This can optionally be one or more substituents R DABNA-2 is replaced by wherein one or more non-adjacent CH groups are optionally R DABNA-2 C=CR DABNA-2 , C≡C, Si(R DABNA-2 )2, Ge(R DABNA-2 )2, Sn(R DABNA-2 )2, C=O, C=S, C=Se, C=NR DABNA-2 , P(=O)(R DABNA-2 ), SO, SO2, NR DABNA-2 , O, S or CONR DABNA-2 is replaced by C1-C 40 Alkoxy, This can optionally be one or more substituents R DABNA-2 is replaced by wherein one or more non-adjacent CH groups are optionally R DABNA-2 C=CR DABNA-2 , C≡C, Si(R DABNA-2 )2, Ge(R DABNA-2 )2, Sn(R DABNA-2 )2, C=O, C=S, C=Se, C=NR DABNA-2 , P(=O)(R DABNA-2 ), SO, SO2, NR DABNA-2 , O, S or CONR DABNA-2 is replaced by C1-C 40 thioalkoxy, This can optionally be one or more substituents R DABNA-2 is replaced by wherein one or more non-adjacent CH groups are optionally R DABNA-2 C=CR DABNA-2 , C≡C, Si(R DABNA-2 )2, Ge(R DABNA-2 )2, Sn(R DABNA-2 )2, C=O, C=S, C=Se, C=NR DABNA-2 , P(=O)(R DABNA-2 ), SO, SO2, NR DABNA-2 , O, S or CONR DABNA-2 is replaced by C2-C 40 alkenyl, This can optionally be one or more substituents R DABNA-2 is replaced by wherein one or more non-adjacent CH groups are optionally R DABNA-2 C=CR DABNA-2 , C≡C, Si(R DABNA-2 )2, Ge(R DABNA-2 )2, Sn(R DABNA-2 )2, C=O, C=S, C=Se, C=NR DABNA-2 , P(=O)(R DABNA-2 ), SO, SO2, NR DABNA-2 , O, S or CONR DABNA-2 is replaced by C2-C 40 Alkynyl, This can optionally be one or more substituents RDABNA-2 is replaced by wherein one or more non-adjacent CH groups are optionally R DABNA-2 C=CR DABNA-2 , C≡C, Si(R DABNA-2 )2, Ge(R DABNA-2 )2, Sn(R DABNA-2 )2, C=O, C=S, C=Se, C=NR DABNA-2 , P(=O)(R DABNA-2 ), SO, SO2, NR DABNA-2 , O, S or CONR DABNA-2 is replaced by C6-C 60 aryl, This can optionally be one or more substituents R DABNA-2 is replaced by C3-C 57 heteroaryl, This can optionally be one or more substituents R DABNA-2 is replaced by, and aliphatic cyclic amines containing 4 to 18 carbon atoms and 1 to 3 nitrogen atoms; R DABNA-2 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, N(R DABNA-6 )2, OR DABNA-6 , S.R. DABNA-6 , Si(R DABNA-6 )3, B(OR DABNA-6 )2, OSO2R DABNA-6 , CF3, CN, halogens (F, Cl, Br, I), C1-C5 alkyl, This can optionally be one or more substituents R DABNA-6 is replaced by wherein one or more non-adjacent CH groups are optionally R DABNA-6 C=CR DABNA-6 , C≡C, Si(R DABNA-6 )2, Ge(R DABNA-6 )2, Sn(R DABNA-6 )2, C=O, C=S, C=Se, C=NR DABNA-6 , P(=O)(R DABNA-6 ), SO, SO2, NR DABNA-6 , O, S or CONR DABNA-6 is replaced by C1-C5 alkoxy, This can optionally be one or more substituents R DABNA-6 is replaced by wherein one or more non-adjacent CH groups are optionally R DABNA-6 C=CR DABNA-6 , C≡C, Si(R DABNA-6 )2, Ge(R DABNA-6 )2, Sn(R DABNA-6 )2, C=O, C=S, C=Se, C=NR DABNA-6 , P(=O)(R DABNA-6 ), SO, SO2, NR DABNA-6 , O, S or CONR DABNA-6 is replaced by C1-C5 thioalkoxy, This can optionally be one or more substituents R DABNA-6 is replaced by wherein one or more non-adjacent CH groups are optionally R DABNA-6 C=CR DABNA-6 , C≡C, Si(R DABNA-6 )2, Ge(R DABNA-6 )2, Sn(R DABNA-6 )2, C=O, C=S, C=Se, C=NR DABNA-6 , P(=O)(R DABNA-6 ), SO, SO2, NR DABNA-6 , O, S or CONR DABNA-6 is replaced by C2-C5 alkenyl, This can optionally be one or more substituents R DABNA-6 is replaced by wherein one or more non-adjacent CH groups are optionally R DABNA-6 C=CR DABNA-6 , C≡C, Si(R DABNA-6 )2, Ge(R DABNA-6 )2, Sn(R DABNA-6 )2, C=O, C=S, C=Se, C=NR DABNA-6 , P(=O)(R DABNA-6 ), SO, SO2, NR DABNA-6 , O, S or CONR DABNA-6 is replaced by C2-C5 alkynyl, This can optionally be one or more substituents R DABNA-6 is replaced by wherein one or more non-adjacent CH groups are optionally R DABNA-6 C=CR DABNA-6 , C≡C, Si(R DABNA-6 )2, Ge(R DABNA-6 )2, Sn(R DABNA-6 )2, C=O, C=S, C=Se, C=NR DABNA-6 , P(=O)(R DABNA-6 ), SO, SO2, NR DABNA-6 , O, S or CONR DABNA-6 is replaced by C6-C 18 aryl, This can optionally be one or more substituents R DABNA-6 is replaced by C3-C 17 heteroaryl, This can optionally be one or more substituents R DABNA-6 is replaced by, and aliphatic cyclic amines containing 4 to 18 carbon atoms and 1 to 3 nitrogen atoms; where R DABNA-1 and R DABNA-2 two or more adjacent substituents selected from optionally form a monocyclic or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system fused to adjacent rings A', B' or C', wherein the optionally fused ring system thus formed (i.e., each ring A', B' or C' and any additional rings optionally fused thereto) contains a total of 8 to 30 ring atoms; Y a and Y b are, independently of each other, a direct (single) bond, NR DABNA-3 , O, S, C(R DABNA-3 )2, Si(R DABNA-3 )2, BR DABNA-3 and Se; R DABNA-3 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, N(R DABNA-4 )2, OR DABNA-4 , S.R. DABNA-4 , Si(R DABNA-4 )3, B(OR DABNA-4 )2, OSO2RDABNA-4 , CF3, CN, halogens (F, Cl, Br, I), C1-C 40 Alkyl, This can optionally be one or more substituents R DABNA-4 is replaced by where one or more non-adjacent CH groups are R DABNA-4 C=CR DABNA-4 , C≡C, Si(R DABNA-4 )2, Ge(R DABNA-4 )2, Sn(R DABNA-4 )2, C=O, C=S, C=Se, C=NR DABNA-4 , P(=O)(R DABNA-4 ), SO, SO2, NR DABNA-4 , O, S or CONR DABNA-4 is replaced by C1-C 40 Alkoxy, This can optionally be one or more substituents R DABNA-4 is replaced by where one or more non-adjacent CH groups are R DABNA-4 C=CR DABNA-4 , C≡C, Si(R DABNA-4 )2, Ge(R DABNA-4 )2, Sn(R DABNA-4 )2, C=O, C=S, C=Se, C=NR DABNA-4 , P(=O)(R DABNA-4 ), SO, SO2, NR DABNA-4 , O, S or CONR DABNA-4 is replaced by C1-C 40 thioalkoxy, This can optionally be one or more substituents R DABNA-4 is replaced by where one or more non-adjacent CH groups are R DABNA-4 C=CR DABNA-4 , C≡C, Si(R DABNA-4 )2, Ge(R DABNA-4 )2, Sn(R DABNA-4 )2, C=O, C=S, C=Se, C=NR DABNA-4 , P(=O)(R DABNA-4 ), SO, SO2, NR DABNA-4 , O, S or CONR DABNA-4 is replaced by C2-C 40 alkenyl, This can optionally be one or more substituents R DABNA-4 is replaced by where one or more non-adjacent CH groups are R DABNA-4 C=CR DABNA-4 , C≡C, Si(R DABNA-4 )2, Ge(R DABNA-4 )2, Sn(R DABNA-4 )2, C=O, C=S, C=Se, C=NR DABNA-4 , P(=O)(R DABNA-4 ), SO, SO2, NR DABNA-4 , O, S or CONR DABNA-4 is replaced by C2-C 40 Alkynyl, This can optionally be one or more substituents R DABNA-4 is replaced by where one or more non-adjacent CH groups are R DABNA-4 C=CR DABNA-4 , C≡C, Si(R DABNA-4 )2, Ge(R DABNA-4 )2, Sn(R DABNA-4 )2, C=O, C=S, C=Se, C=NR DABNA-4 , P(=O)(R DABNA-4 ), SO, SO2, NR DABNA-4 , O, S or CONR DABNA-4 is replaced by C6-C 60 aryl, This can optionally be one or more substituents R DABNA-4 is replaced by C3-C 57 heteroaryl, This can optionally be one or more substituents R DABNA-4 is replaced by, and aliphatic cyclic amines containing 4 to 18 carbon atoms and 1 to 3 nitrogen atoms; R DABNA-4 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, N(R DABNA-5 )2, OR DABNA-5 , S.R. DABNA-5 , Si(R DABNA-5 )3, B(ORDABNA-5 )2, OSO2R DABNA-5 , CF3, CN, halogens (F, Cl, Br, I), C1-C 40 Alkyl, This can optionally be one or more substituents R DABNA-5 is replaced by where one or more non-adjacent CH groups are R DABNA-5 C=CR DABNA-5 , C≡C, Si(R DABNA-5 )2, Ge(R DABNA-5 )2, Sn(R DABNA-5 )2, C=O, C=S, C=Se, C=NR DABNA-5 , P(=O)(R DABNA-5 ), O, S or CONR DABNA-5 is replaced by C1-C 40 Alkoxy, This can optionally be one or more substituents R DABNA-5 is replaced by where one or more non-adjacent CH groups are R DABNA-5 C=CR DABNA-5 , C≡C, Si(R DABNA-5 )2, Ge(R DABNA-5 )2, Sn(R DABNA-5 )2, C=O, C=S, C=Se, C=NR DABNA-5 , P(=O)(R DABNA-5 ), O, S or CONR DABNA-5 is replaced by C1-C 40 thioalkoxy, This can optionally be one or more substituents R DABNA-5 is replaced by where one or more non-adjacent CH groups are R DABNA-5 C=CR DABNA-5 , C≡C, Si(R DABNA-5 )2, Ge(R DABNA-5 )2, Sn(R DABNA-5 )2, C=O, C=S, C=Se, C=NR DABNA-5 , P(=O)(R DABNA-5 ), O, S or CONR DABNA-5 is replaced by C2-C 40 alkenyl, This can optionally be one or more substituents R DABNA-5 is replaced by where one or more non-adjacent CH groups are R DABNA-5 C=CR DABNA-5 , C≡C, Si(R DABNA-5 )2, Ge(R DABNA-5 )2, Sn(R DABNA-5 )2, C=O, C=S, C=Se, C=NR DABNA-5 , P(=O)(R DABNA-5 ), O, S or CONR DABNA-5 is replaced by C2-C 40 Alkynyl, This can optionally be one or more substituents R DABNA-5 is replaced by where one or more non-adjacent CH groups are R DABNA-5 C=CR DABNA-5 , C≡C, Si(R DABNA-5 )2, Ge(R DABNA-5 )2, Sn(R DABNA-5 )2, C=O, C=S, C=Se, C=NR DABNA-5 , P(=O)(R DABNA-5 ), O, S or CONR DABNA-5 is replaced by C6-C 60 aryl, This can optionally be one or more substituents R DABNA-5 is replaced by C3-C 57 heteroaryl, This can optionally be one or more substituents R DABNA-5 is replaced by, and aliphatic cyclic amines containing 4 to 18 carbon atoms and 1 to 3 nitrogen atoms; R DABNA-5 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, N(R DABNA-6 )2, OR DABNA-6 , S.R. DABNA-6 , Si(R DABNA-6 )3, B(OR DABNA-6 )2, OSO2R DABNA-6 , CF3, CN, halogens (F, Cl, Br, I), C1-C5 alkyl, This can optionally be one or more substituents R DABNA-6 is replaced by wherein one or more non-adjacent CH groups are optionally R DABNA-6 C=CR DABNA-6 , C≡C, Si(R DABNA-6 )2, Ge(R DABNA-6 )2, Sn(R DABNA-6 )2, C=O, C=S, C=Se, C=NR DABNA-6 , P(=O)(R DABNA-6 ), SO, SO2, NR DABNA-6 , O, S or CONR DABNA-6 is replaced by C1-C5 alkoxy, This can optionally be one or more substituents R DABNA-6 is replaced by wherein one or more non-adjacent CH groups are optionally R DABNA-6 C=CR DABNA-6 , C≡C, Si(R DABNA-6 )2, Ge(R DABNA-6 )2, Sn(R DABNA-6 )2, C=O, C=S, C=Se, C=NR DABNA-6 , P(=O)(R DABNA-6 ), SO, SO2, NR DABNA-6 , O, S or CONR DABNA-6 is replaced by C1-C5 thioalkoxy, This can optionally be one or more substituents R DABNA-6 is replaced by wherein one or more non-adjacent CH groups are optionally R DABNA-6 C=CR DABNA-6 , C≡C, Si(R DABNA-6 )2, Ge(R DABNA-6 )2, Sn(R DABNA-6 )2, C=O, C=S, C=Se, C=NR DABNA-6 , P(=O)(R DABNA-6 ), SO, SO2, NR DABNA-6 , O, S or CONR DABNA-6 is replaced by C2-C5 alkenyl, This can optionally be one or more substituents R DABNA-6 is replaced by wherein one or more non-adjacent CH groups are optionally R DABNA-6 C=CR DABNA-6 , C≡C, Si(R DABNA-6 )2, Ge(R DABNA-6 )2, Sn(R DABNA-6 )2, C=O, C=S, C=Se, C=NR DABNA-6 , P(=O)(R DABNA-6 ), SO, SO2, NR DABNA-6 , O, S or CONR DABNA-6 is replaced by C2-C5 alkynyl, This can optionally be one or more substituents R DABNA-6 is replaced by wherein one or more non-adjacent CH groups are optionally R DABNA-6 C=CR DABNA-6 , C≡C, Si(R DABNA-6 )2, Ge(R DABNA-6 )2, Sn(R DABNA-6 )2, C=O, C=S, C=Se, C=NR DABNA-6 , P(=O)(R DABNA-6 ), SO, SO2, NR DABNA-6 , O, S or CONR DABNA-6 is replaced by C6-C 18 aryl, This can optionally be one or more substituents R DABNA-6 is replaced by C3-C 17 heteroaryl, This can optionally be one or more substituents R DABNA-6 is replaced by, and aliphatic cyclic amines containing 4 to 18 carbon atoms and 1 to 3 nitrogen atoms; where R DABNA-3 , R DABNA-4 and R DABNA-5 two or more adjacent substituents selected from optionally together form a monocyclic or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system, wherein optionally the fused ring system thus formed contains a total of 8 to 30 ring atoms; R DABNA-6 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, OPh (Ph = phenyl), SPh, CF3, CN, F, Si(C1-C5 alkyl)3, Si(Ph)3, C1-C5 alkyl, wherein optionally one or more hydrogen atoms are independently replaced with deuterium, Ph, CN, CF, or F; C1-C5 alkoxy, wherein optionally one or more hydrogen atoms are independently replaced by deuterium, CN, CF, or F; C1-C5 thioalkoxy, wherein optionally one or more hydrogen atoms are independently replaced by deuterium, CN, CF, or F; C2-C5 alkenyl, wherein optionally one or more hydrogen atoms are independently replaced by deuterium, CN, CF, or F; C2-C5 alkynyl, wherein optionally one or more hydrogen atoms are independently replaced by deuterium, CN, CF, or F; C6-C 18 aryl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, CF, F, C-C alkyl, SiMe, SiPh, or C-C 18 substituted by aryl substituents, C3-C 17 heteroaryl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, CF, F, C-C alkyl, SiMe, SiPh, or C-C 18 substituted by aryl substituents, N(C6-C 18 aryl)2, N(C3-C 17 heteroaryl)2, and N(C3-C 17 Heteroaryl)(C6-C 18 aryl), where Y a and Y b One of the following, or Y a and Y b Both of them are NRDABNA-3 , C(R DABNA-3 )2, Si(R DABNA-3 )2 or BR DABNA-3 when said one or two substituents R DABNA-3 optionally, independently of each other, adjacent rings A' and B' (Y a =NR DABNA-3 , C(R DABNA-3 )2, Si(R DABNA-3 )2 or BR DABNA-3 ), or A' and C'(Y b =NR DABNA-3 , C(R DABNA-3 )2, Si(R DABNA-3 )2 or BR DABNA-3 ), or, independently in each case, NR DABNA-1 , O, S, C(R DABNA-1 )2, Si(R DABNA-1 )2, BR DABNA-1 and Se, wherein optionally two or more, preferably two, structures of the formula DABNA-I are joined to each other, preferably fused to each other by sharing at least one, more preferably exactly one bond; wherein optionally two or more, preferably two, structures of formula DABNA-I are present in the emitter and share at least one, preferably exactly one, aromatic or heteroaromatic ring (i.e., the ring is also part of the two structures of formula DABNA-I), which ring is preferably any one of rings A', B', and C' of formula DABNA-I, but also R DABNA-1 , R DABNA-2 , R DABNA-3 , R DABNA-4 , R DABNA-5 and R DABNA-6 , especially R DABNA-3or any aromatic or heteroaromatic ring formed by two or more adjacent substituents as described above, wherein the shared ring may constitute the same or different parts of two or more structures of formula DABNA-I that share said ring (i.e., the shared ring may also be ring C' of, for example, two structures of formula DABNA-I selectively contained in the emitter, or the shared ring may also be ring B' of one structure of formula DABNA-I selectively contained in the emitter and ring C' of another structure), where, optionally, at least one R DABNA-1 , R DABNA-2 , R DABNA-3 , R DABNA-4 , R DABNA-5 and R DABNA-6 is replaced by a bond to a further chemical entity of formula DABNA-I, and / or optionally at least one R DABNA-1 , R DABNA-2 , R DABNA-3 , R DABNA-4 , R DABNA-5 and R DABNA-6 wherein at least one hydrogen atom is replaced by a bond to a further chemical entity of formula DABNA-I.

[0408] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B may include one or more small FWHM emitters S B At least one of the compounds comprises a structure according to the formula DABNA-I.

[0409] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B has a respective small FWHM emitter S B includes a structure according to the chemical formula DABNA-I.

[0410] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B may include one or more small FWHM emitters S B At least one of the molecules has the structure according to the chemical formula DABNA-I.

[0411] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B has a respective small FWHM emitter S B has a structure according to the chemical formula DABNA-I.

[0412] In a preferred embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of a structure according to the chemical formula DABNA-I, where A', B', and C' are all aromatic rings each having six ring atoms (ie, all benzene rings).

[0413] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of a structure according to the formula DABNA-I, where Y a and Y b are independent of each other, NR DABNA-3 , O, S, C(R DABNA-3 )2 and Si(R DABNA-3 )2 is selected.

[0414] In a preferred embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of a structure according to the formula DABNA-I, where Y a and Y b are independent of each other, NR DABNA-3 , O and S.

[0415] In a more preferred embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S Bcomprises or consists of a structure according to the formula DABNA-I, where Y a and Y b are independent of each other, NR DABNA-3 and O.

[0416] In a particularly preferred embodiment of the present invention, at least one, preferably each, light-emitting layer B has at least one, preferably each, small FWHM emitter S B comprises or consists of a structure according to the formula DABNA-I, where Y a and Y b are both NR DABNA-3 is.

[0417] In a particularly preferred embodiment of the present invention, at least one, preferably each, light-emitting layer B has at least one, preferably each, small FWHM emitter S B comprises or consists of a structure according to the formula DABNA-I, where Y a and Y b are identical independently of each other and both are NR DABNA-3 is.

[0418] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of a structure according to the chemical formula DABNA-I, R DABNA-1 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, N(R DABNA-2 )2, OR DABNA-2 , S.R. DABNA-2 , Si(R DABNA-2 )3, CF3, CN, F, C1-C5 alkyl, This can optionally be one or more substituents R DABNA-2 is replaced by C1-C5 alkoxy, This can optionally be one or more substituents R DABNA-2 is replaced by C1-C5 thioalkoxy, This can optionally be one or more substituents R DABNA-2 is replaced by C6-C 18 aryl, This can optionally be one or more substituents R DABNA-2 is replaced by C3-C 17 heteroaryl, This can optionally be one or more substituents R DABNA-2 is replaced by R DABNA-2 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, N(R DABNA-6 )2, OR DABNA-6 , S.R. DABNA-6 , Si(R DABNA-6 )3, CF3, CN, F, C1-C5 alkyl, This can optionally be one or more substituents R DABNA-6 is replaced by C6-C 18 aryl, This can optionally be one or more substituents R DABNA-6 is replaced by C3-C 17 heteroaryl, This can optionally be one or more substituents R DABNA-6 is replaced by where R DABNA-1 and R DABNA-2 Two or more adjacent substituents selected from optionally form a monocyclic or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system fused to adjacent rings A', B', or C', wherein the optionally fused ring system thus formed (i.e., each ring A', B', or C' and any additional rings optionally fused thereto) contains a total of 8 to 30 ring atoms.

[0419] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of a structure according to the chemical formula DABNA-I, R DABNA-1 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, N(R DABNA-2 )2, OR DABNA-2 , S.R. DABNA-2 , Si(R DABNA-2 )3. C1-C5 alkyl, This can optionally be one or more substituents R DABNA-2 is replaced by C6-C 18 aryl, This can optionally be one or more substituents R DABNA-2 is replaced by C3-C 17 heteroaryl, This can optionally be one or more substituents R DABNA-2 is replaced by R DABNA-2 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, N(R DABNA-6 )2, OR DABNA-6 , S.R. DABNA-6 , Si(R DABNA-6 )3, CF3, CN, F, C1-C5 alkyl, This can optionally be one or more substituents R DABNA-6 is replaced by C6-C 18 aryl, This can optionally be one or more substituents R DABNA-6 is replaced by C3-C 17 heteroaryl, This can optionally be one or more substituents R DABNA-6 is replaced by where R DABNA-1 and R DABNA-2Two or more adjacent substituents selected from optionally form a monocyclic or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system fused to adjacent rings A', B', or C', wherein the optionally fused ring system thus formed (i.e., each ring A', B', or C' and any additional rings optionally fused thereto) contains a total of 8 to 30 ring atoms.

[0420] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of a structure according to the chemical formula DABNA-I, R DABNA-1 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, N(R DABNA-2 )2, OR DABNA-2 , S.R. DABNA-2 , C1-C5 alkyl, This can optionally be one or more substituents R DABNA-2 is replaced by C6-C 18 aryl, This can optionally be one or more substituents R DABNA-2 is replaced by C3-C 17 heteroaryl, This can optionally be one or more substituents R DABNA-2 is replaced by R DABNA-2 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, N(Ph)2, OPh, CN, Me, i Pr, t Bu, Si(Me)3, Ph, This can optionally be one or more substituents R DABNA-6 is replaced by C3-C 17 heteroaryl, This can optionally be one or more substituents R DABNA-6 is replaced by where two or more adjacent R DABNA-1 forms a monocyclic or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system fused to an adjacent ring A', B', or C', wherein optionally the fused ring system thus formed (i.e., each ring A', B', or C' and any additional rings optionally fused thereto) contains a total of 8 to 30 ring atoms.

[0421] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of a structure according to the chemical formula DABNA-I, R DABNA-1 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, N(Ph)2, OPh, Me, i Pr, t Bu, Si(Me)3, Ph, wherein one or more hydrogen atoms are optionally, independently of one another, deuterium, Me, i Pr, t substituted with Bu, Ph or CN, C3-C 17 heteroaryl, wherein one or more hydrogen atoms are optionally, independently of one another, deuterium, Me, i Pr, t substituted with Bu, Ph or CN, where two or more adjacent substituents R DABNA-1 optionally forms a monocyclic or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system optionally fused to an adjacent ring A', B', or C', wherein the optionally fused ring system thus formed (i.e., each ring A', B', or C' and any additional rings optionally fused thereto) contains a total of 8 to 30 ring atoms.

[0422] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of a structure according to the chemical formula DABNA-I, R DABNA-1 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, N(Ph)2, Me, i Pr, t Bu, Ph, wherein one or more hydrogen atoms are optionally, independently of one another, deuterium, Me, i Pr, t substituted with Bu, Ph or CN, Carbazolyl, wherein one or more hydrogen atoms are optionally, independently of one another, deuterium, Me, i Pr, t substituted with Bu, Ph or CN, triazinyl, wherein one or more hydrogen atoms are optionally, independently of one another, deuterium, Me, i Pr, t substituted with Bu, Ph or CN, pyrimidinyl, wherein one or more hydrogen atoms are optionally, independently of one another, deuterium, Me, i Pr, t substituted with Bu, Ph or CN, pyridinyl, wherein one or more hydrogen atoms are optionally, independently of one another, deuterium, Me, i Pr, t substituted with Bu, Ph or CN, where two or more adjacent substituents R DABNA-1 optionally forms a monocyclic or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system optionally fused to an adjacent ring A', B', or C', wherein the optionally fused ring system thus formed (i.e., each ring A', B', or C' and any additional rings optionally fused thereto) contains a total of 8 to 30 ring atoms.

[0423] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of a structure according to the chemical formula DABNA-I, and R DABNA-1 and R DABNA-2 Adjacent substituents selected from do not form a monocyclic or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system fused to the adjacent ring A', B' or C'.

[0424] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of a structure according to the chemical formula DABNA-I, R DABNA-3 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, C1-C4 alkyl, This can optionally be one or more substituents R DABNA-4 is replaced by C6-C 18 aryl, This can optionally be one or more substituents R DABNA-4 is replaced by C3-C 17 heteroaryl, This can optionally be one or more substituents R DABNA-4 is replaced by R DABNA-4 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, N(R DABNA-5 )2, OR DABNA-5 , S.R. DABNA-5 , Si(C1-C5 alkyl)3, CF3, CN, F, C1-C5 alkyl, This can optionally be one or more substituents R DABNA-5 is replaced by C6-C 18aryl, This can optionally be one or more substituents R DABNA-5 is replaced by C3-C 17 heteroaryl, This can optionally be one or more substituents R DABNA-5 is replaced by R DABNA-5 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, N(Ph)2, OPh, Si(Me)3, CF3, CN, F, C1-C5 alkyl, wherein one or more hydrogen atoms are optionally and independently replaced with deuterium; C6-C 18 aryl, wherein one or more hydrogen atoms are optionally, independently of one another, deuterium, Me, i Pr, t substituted by Bu, Ph or CN, C3-C 17 heteroaryl, wherein one or more hydrogen atoms are optionally, independently of one another, deuterium, Me, i Pr, t substituted by Bu, Ph or CN, where R DABNA-3 , R DABNA-4 and R DABNA-5 Two or more adjacent substituents selected from optionally together form a monocyclic or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system, wherein optionally the fused ring system thus formed contains a total of 8 to 30 ring atoms.

[0425] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of a structure according to the chemical formula DABNA-I, R DABNA-3 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, C1-C4 alkyl, This can optionally be one or more substituents R DABNA-4 is replaced by C6-C 18 aryl, This can optionally be one or more substituents R DABNA-4 is replaced by C3-C 17 heteroaryl, This can optionally be one or more substituents R DABNA-4 is replaced by R DABNA-4 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, N(Ph)2, OPh, Si(Me)3, CF3, CN, F, C1-C5 alkyl, wherein one or more hydrogen atoms are optionally and independently replaced with deuterium; C6-C 18 aryl, wherein one or more hydrogen atoms are optionally, independently of one another, deuterium, Me, i Pr, t substituted by Bu, Ph or CN, C3-C 17 heteroaryl, wherein one or more hydrogen atoms are optionally, independently of one another, deuterium, Me, i Pr, t substituted by Bu, Ph or CN, where R DABNA-3 and R DABNA-4 Two or more adjacent substituents selected from do not together form a monocyclic or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system.

[0426] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of a structure according to the chemical formula DABNA-I, R DABNA-3are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, C1-C4 alkyl, This can optionally be one or more substituents R DABNA-4 is replaced by C6-C 18 aryl, This can optionally be one or more substituents R DABNA-4 is replaced by C3-C 17 heteroaryl, This can optionally be one or more substituents R DABNA-4 is replaced by R DABNA-4 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, CN, F, C1-C5 alkyl, wherein one or more hydrogen atoms are optionally and independently replaced with deuterium; C6-C 18 aryl, wherein one or more hydrogen atoms are optionally, independently of one another, deuterium, Me, i Pr, t substituted by Bu, Ph or CN, C3-C 17 heteroaryl, wherein one or more hydrogen atoms are optionally, independently of one another, deuterium, Me, i Pr, t substituted by Bu, Ph or CN, where R DABNA-3 and R DABNA-4 Two or more adjacent substituents selected from do not together form a monocyclic or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system.

[0427] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of a structure according to the chemical formula DABNA-I, RDABNA-3 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, Me, i Pr, t Bu, and C6-C 18 aryl, wherein one or more hydrogen atoms are optionally, independently of one another, deuterium, Me, i Pr, t substituted by Bu, Ph or CN, where R DABNA-3 Two or more adjacent substituents selected from do not together form a monocyclic or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system.

[0428] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of a structure according to the chemical formula DABNA-I, R DABNA-3 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, Me, i Pr, t Bu, and Ph, wherein one or more hydrogen atoms are optionally, independently of one another, deuterium, Me, i Pr, t substituted by Bu, Ph or CN, where R DABNA-3 Two or more adjacent substituents selected from do not together form a monocyclic or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system.

[0429] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of a structure according to the chemical formula DABNA-I, RDABNA-6 are, in each occurrence independently of one another, selected from the group consisting of: Hydrogen, deuterium, OPh (Ph = phenyl), SPh, CF3, CN, F, Si(C1-C5 alkyl)3, Si(Ph)3, C1-C5 alkyl, wherein optionally one or more hydrogen atoms are independently replaced with deuterium, Ph, CN, CF, or F; C6-C 18 aryl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, CF, F, C-C alkyl, SiMe, SiPh, or C-C 18 aryl-substituted, C3-C 17 heteroaryl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, CF, F, C-C alkyl, SiMe, SiPh, or C-C 18 aryl-substituted, N(C6-C 18 aryl)2, N(C3-C 17 heteroaryl)2, and N(C3-C 17 Heteroaryl)(C6-C 18 aryl).

[0430] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of a structure according to the chemical formula DABNA-I, R DABNA-6 are, in each occurrence independently of one another, selected from the group consisting of: Hydrogen, deuterium, N(Ph)2, OPh (Ph = phenyl), SPh, CF3, CN, F, Si(Me)3, Si(Ph)3, C1-C5 alkyl, wherein optionally one or more hydrogen atoms are independently replaced with deuterium, Ph, CN, CF, or F; C6-C 18 aryl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, CF3, F, Me, i Pr, t substituted with Bu, SiMe3, SiPh3 or Ph, C3-C 17 heteroaryl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, CF3, F, Me, i Pr, t It is substituted by Bu, SiMe3, SiPh3 or Ph.

[0431] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of a structure according to the chemical formula DABNA-I, R DABNA-6 are, in each occurrence independently of one another, selected from the group consisting of: Hydrogen, deuterium, N(Ph)2, CN, F, Me, i Pr, t Bu, Ph, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, Me, i Pr, t substituted with Bu or Ph, C3-C 17 heteroaryl, wherein optionally one or more hydrogen atoms are independently selected from deuterium, CN, Me, i Pr, t It is substituted with Bu or Ph.

[0432] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of a structure according to the chemical formula DABNA-I, R DABNA-6are, in each occurrence independently of one another, selected from the group consisting of: Hydrogen, deuterium, Me, i Pr, t Bu, Ph, wherein optionally one or more hydrogen atoms are independently selected from deuterium, Me, i Pr, t It is substituted by Bu or Ph.

[0433] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of a structure according to the chemical formula DABNA-I, Y a and / or Y b NR DABNA-3 , C(R DABNA-3 )2, Si(R DABNA-3 )2 or BR DABNA-3 If DABNA-3 is one or two adjacent rings A' and B'(Y a =NR DABNA-3 , C(R DABNA-3 )2, Si(R DABNA-3 )2 or BR DABNA-3 ), or A' and C' (Y b =NR DABNA-3 , C(R DABNA-3 )2, Si(R DABNA-3 )2 or BR DABNA-3 ) does not combine with

[0434] In one embodiment, a small FWHM emitter S in the context of the present invention BAlternatively, the compounds may be multimers (e.g., dimers) of the aforementioned formula DABNA-I, meaning that their structure comprises one or more subunits, each of which has a structure according to the formula DABNA-I. In this case, those skilled in the art will understand that two or more subunits according to the formula DABNA-I may, for example, be conjugated, and preferably fused, to one another (i.e., share at least one bond, where each substituent bonded to the atom forming the bond may not be present any more). Also, two or more subunits may share at least one, preferably exactly one, aromatic or heteroaromatic ring. This is advantageous, for example, in the case of small FWHM emitters S B Each of the subunits has the structure of the formula DABNA-I, where the two subunits share an aromatic or heteroaromatic ring (i.e., each ring is part of two subunits). As a result, each multimeric (e.g., dimeric) emitter S B where the shared ring is present only once and does not include two whole subunits of the formula DABNA-I. Nevertheless, those skilled in the art will understand that the emitter is still considered herein to be a multimer of the formula DABNA-I (e.g., a dimer if it includes two subunits having the structure of the formula DABNA-I). The same applies to multimers that share one or more rings. Preferably, the multimer is a dimer containing two subunits, each having the structure of the formula DABNA-I.

[0435] In one embodiment of the present invention, at least one, preferably each, small FWHM emitter S B As mentioned above, is a dimer of formula DABNA-I, meaning that the emitter contains two subunits each having a structure according to formula DABNA-I.

[0436] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of two or more, preferably exactly two, structures (i.e., subunits) according to the formula DABNA-I; wherein the subunits share at least one, and preferably exactly one, aromatic or heteroaromatic ring (i.e., the ring is also part of two structures of formula DABNA-I), where the shared ring is also any one of rings A', B', and C' of formula DABNA-I, but not R DABNA-1 , R DABNA-2 , R DABNA-3 , R DABNA-4 , R DABNA-5 and R DABNA-6 , especially R DABNA-3 or any aromatic or heteroaromatic ring formed by two or more adjacent substituents as described above, wherein the shared ring can constitute the same or different parts of two or more structures of formula DABNA-I that share said ring (i.e., the shared ring can be, for example, ring C' of two structures of formula DABNA-I selectively contained in the emitter, or the shared ring can be, for example, ring B' of one structure of formula DABNA-I selectively contained in the emitter and ring C' of another structure).

[0437] In one embodiment of the present invention, at least one, preferably each, light-emitting layer B includes at least one, preferably each, small FWHM emitter S B comprises or consists of two or more, preferably exactly two, structures (i.e., subunits) according to the formula DABNA-I; where R DABNA-1 , R DABNA-2 , R DABNA-3 , R DABNA-4 , R DABNA-5 and R DABNA-6is replaced by a bond to a further chemical entity of formula DABNA-I, and / or R DABNA-1 , R DABNA-2 , R DABNA-3 , R DABNA-4 , R DABNA-5 and R DABNA-6 wherein at least one hydrogen atom of any one of is replaced by a bond to a further chemical entity of formula DABNA-I.

[0438] The small FWHM emitter S according to the present invention B Non-limiting examples of emitters that include or consist of a structure according to the formula DABNA-I are shown below: [ka] [ka] [ka] [ka] [ka] [ka] [ka] [ka] [ka] [ka]

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[0439] In one embodiment of the present invention, at least one small FWHM emitter S B includes a structure according to the chemical formula BNE-1.

[0440] In one embodiment of the present invention, each small FWHM emitter S B includes a structure according to the chemical formula BNE-1.

[0441] In one embodiment of the present invention, at least one small FWHM emitter S B consists of a structure according to the chemical formula BNE-1.

[0442] In one embodiment of the present invention, each small FWHM emitter S B consists of a structure according to the chemical formula BNE-1.

[0443] In one embodiment of the present invention, at least one, and preferably each, of one or more small FWHM emitters S B comprises or consists of a structure according to the chemical formula BNE-1, where V 1 is CR BNE-V and V 2 is CR BNE-I is.

[0444] In one embodiment of the present invention, at least one, and preferably each, of one or more small FWHM emitters S B comprises or consists of a structure according to the formula BNE-1, where V 1 and V 2 are both nitrogen (N).

[0445] In one embodiment of the present invention, at least one, and preferably each, of one or more small FWHM emitters S B comprises or consists of a structure according to the chemical formula BNE-1, where V 1 is nitrogen (N) and V 2 is CR BNE-I is.

[0446] In one embodiment of the present invention, at least one, and preferably each, of one or more small FWHM emitters S B comprises or consists of a structure according to the chemical formula BNE-1, where V 1 is CR BNE-V and V 2 is nitrogen (N).

[0447] In one embodiment of the present invention, at least one, and preferably each, of one or more small FWHM emitters S B comprises or consists of a structure according to the formula BNE-1, where c and d are both 0.

[0448] In one embodiment of the present invention, at least one, and preferably each, of one or more small FWHM emitters S B comprises or consists of a structure according to the chemical formula BNE-1, where c is 0 and d is 1.

[0449] In one embodiment of the present invention, at least one, and preferably each, of one or more small FWHM emitters S B comprises or consists of a structure according to the chemical formula BNE-1, where c is 1 and d is 0.

[0450] In one embodiment of the present invention, at least one, and preferably each, of one or more small FWHM emitters S B comprises or consists of a structure according to the chemical formula BNE-1, where c and d are both 1.

[0451] In one embodiment of the present invention, at least one, and preferably each, of one or more small FWHM emitters S B comprises or consists of a structure according to the chemical formula BNE-1, where X 3 is a direct bond, CR BNE-3 R BNE-4 , C=O, NR BNE-3 ,O,S,SiR BNE-3 R BNE-4 is selected from the group consisting of Y 2 is a direct bond, CR BNE-3’ R BNE-4’ , C=O, NR BNE-3’ ,O,S,SiR BNE-3’ R BNE-4’ is selected from the group consisting of:

[0452] In one embodiment of the present invention, at least one, and preferably each, of one or more small FWHM emitters S B comprises or consists of a structure according to the chemical formula BNE-1, where X 3 is a direct bond, CRBNE-3 R BNE-4 , N.R. BNE-3 ,O,S,SiR BNE-3 R BNE-4 is selected from the group consisting of Y 2 is a direct bond, CR BNE-3’ R BNE-4’ , N.R. BNE-3’ ,O,S,SiR BNE-3’ R BNE-4’ is selected from the group consisting of:

[0453] In one embodiment of the present invention, at least one, and preferably each, of one or more small FWHM emitters S B comprises or consists of a structure according to the chemical formula BNE-1, where X 3 is a direct bond, CR BNE-3 R BNE-4 , N.R. BNE-3 ,O,S,SiR BNE-3 R BNE-4 is selected from the group consisting of Y 2 is a direct bond.

[0454] In one embodiment of the present invention, at least one, and preferably each, of one or more small FWHM emitters S B comprises or consists of a structure according to the chemical formula BNE-1, where X 3 is a direct bond or NR BNE-3 and Y 2 is a direct bond.

[0455] In one embodiment of the present invention, at least one, and preferably each, of one or more small FWHM emitters S B comprises or consists of a structure according to the chemical formula BNE-1, where X 3 is NR BNE-3 and Y 2 is a direct bond.

[0456] In one embodiment of the present invention, at least one, and preferably each, of one or more small FWHM emitters S B comprises or consists of a structure according to the chemical formula BNE-1, R BNE-1 , R BNE-2 , R BNE-1’ , R BNE-2’ , R BNE-3 , R BNE-4 , R BNE-3’ , R BNE-4’ , R BNE-I , R BNE-II , R BNE-III , R BNE-IV and R BNE-V are each independently selected from the group consisting of: Hydrogen, deuterium, N(R BNE-5 )2, OR BNE-5 , Si(R BNE-5 )3, B(OR BNE-5 )2, B(R BNE-5 )2, OSO2R BNE-5 ,CF3,CN,F,Cl,Br,I, C1-C 40 Alkyl, This is a group consisting of one or more substituents R BNE-5 is selectively substituted with where one or more non-adjacent CH groups are R BNE-5 C=CR BNE-5 , C≡C, Si(R BNE-5 )2, Ge(R BNE-5 )2, Sn(R BNE-5 )2, C=O, C=S, C=Se, C=NR BNE-5 , P(=O)(R BNE-5 ), SO, SO2, NR BNE-5 , O, S or CONR BNE-5 is selectively substituted with C1-C 40 Alkoxy, This is a group consisting of one or more substituents R BNE-5 is selectively substituted with where one or more non-adjacent CH groups are R BNE-5 C=CR BNE-5 , C≡C, Si(R BNE-5 )2, Ge(R BNE-5)2, Sn(R BNE-5 )2, C=O, C=S, C=Se, C=NR BNE-5 , P(=O)(R BNE-5 ), SO, SO2, NR BNE-5 , O, S or CONR BNE-5 is selectively substituted with C1-C 40 thioalkoxy, This is a group consisting of one or more substituents R BNE-5 is selectively substituted with where one or more non-adjacent CH groups are R BNE-5 C=CR BNE-5 , C≡C, Si(R BNE-5 )2, Ge(R BNE-5 )2, Sn(R BNE-5 )2, C=O, C=S, C=Se, C=NR BNE-5 , P(=O)(R BNE-5 ), SO, SO2, NR BNE-5 , O, S or CONR BNE-5 is selectively substituted with C2-C 40 alkenyl, This is a group consisting of one or more substituents R BNE-5 is selectively substituted with where one or more non-adjacent CH groups are R BNE-5 C=CR BNE-5 , C≡C, Si(R BNE-5 )2, Ge(R BNE-5 )2, Sn(R BNE-5 )2, C=O, C=S, C=Se, C=NR BNE-5 , P(=O)(R BNE-5 ), SO, SO2, NR BNE-5 , O, S or CONR BNE-5 is selectively substituted with C2-C 40 Alkynyl, This is a group consisting of one or more substituents R BNE-5 is selectively substituted with where one or more non-adjacent CH groups are R BNE-5 C=CR BNE-5 , C≡C, Si(R BNE-5 )2, Ge(R BNE-5 )2, Sn(R BNE-5)2, C=O, C=S, C=Se, C=NR BNE-5 , P(=O)(R BNE-5 ), SO, SO2, NR BNE-5 , O, S or CONR BNE-5 is selectively substituted with C6-C 60 aryl, This is a group consisting of one or more substituents R BNE-5 is optionally substituted with, and C2-C 57 heteroaryl, This is a group consisting of one or more substituents R BNE-5 is selectively substituted with R BNE-d , R BNE-d’ and R BNE-e are each independently selected from the group consisting of: Hydrogen, deuterium, CF3, CN, F, Cl, Br, I, C1-C 40 Alkyl, This is a group consisting of one or more substituents R BNE-a is selectively substituted with where one or more non-adjacent CH groups are R BNE-5 C=CR BNE-5 , C≡C, Si(R BNE-5 )2, Ge(R BNE-5 )2, Sn(R BNE-5 )2, C=O, C=S, C=Se, C=NR BNE-5 , P(=O)(R BNE-5 ), SO, SO2, NR BNE-5 , O, S or CONR BNE-5 is selectively substituted with C6-C 60 aryl, This is a group consisting of one or more substituents R BNE-a is optionally substituted with, and C2-C 57 heteroaryl, This is a group consisting of one or more substituents R BNE-a is selectively substituted with R BNE-a are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, N(R BNE-5 )2, ORBNE-5 , Si(R BNE-5 )3, B(OR BNE-5 )2, B(R BNE-5 )2, OSO2R BNE-5 ,CF3,CN,F,Cl,Br,I, C1-C 40 Alkyl, This is a group consisting of one or more substituents R BNE-5 is selectively substituted with where one or more non-adjacent CH groups are R BNE-5 C=CR BNE-5 , C≡C, Si(R BNE-5 )2, Ge(R BNE-5 )2, Sn(R BNE-5 )2, C=O, C=S, C=Se, C=NR BNE-5 , P(=O)(R BNE-5 ), SO, SO2, NR BNE-5 , O, S or CONR BNE-5 is selectively substituted with C1-C 40 Alkoxy, This is a group consisting of one or more substituents R BNE-5 is selectively substituted with where one or more non-adjacent CH groups are R BNE-5 C=CR BNE-5 , C≡C, Si(R BNE-5 )2, Ge(R BNE-5 )2, Sn(R BNE-5 )2, C=O, C=S, C=Se, C=NR BNE-5 , P(=O)(R BNE-5 ), SO, SO2, NR BNE-5 , O, S or CONR BNE-5 is selectively substituted with C1-C 40 thioalkoxy, This is a group consisting of one or more substituents R BNE-5 is selectively substituted with where one or more non-adjacent CH groups are R BNE-5 C=CR BNE-5 , C≡C, Si(R BNE-5 )2, Ge(R BNE-5 )2, Sn(R BNE-5 )2, C=O, C=S, C=Se, C=NR BNE-5 , P(=O)(RBNE-5 ), SO, SO2, NR BNE-5 , O, S or CONR BNE-5 is selectively substituted with C2-C 40 alkenyl, This is a group consisting of one or more substituents R BNE-5 is selectively substituted with where one or more non-adjacent CH groups are R BNE-5 C=CR BNE-5 , C≡C, Si(R BNE-5 )2, Ge(R BNE-5 )2, Sn(R BNE-5 )2, C=O, C=S, C=Se, C=NR BNE-5 , P(=O)(R BNE-5 ), SO, SO2, NR BNE-5 , O, S or CONR BNE-5 is selectively substituted with C2-C 40 Alkynyl, This is a group consisting of one or more substituents R BNE-5 is selectively substituted with where one or more non-adjacent CH groups are R BNE-5 C=CR BNE-5 , C≡C, Si(R BNE-5 )2, Ge(R BNE-5 )2, Sn(R BNE-5 )2, C=O, C=S, C=Se, C=NR BNE-5 , P(=O)(R BNE-5 ), SO, SO2, NR BNE-5 , O, S or CONR BNE-5 is selectively substituted with C6-C 60 aryl, This is a group consisting of one or more substituents R BNE-5 is optionally substituted with, and C2-C 57 heteroaryl, This is a group consisting of one or more substituents R BNE-5 is selectively substituted with R BNE-5 are selected, independently in each occurrence, from the group consisting of: Hydrogen, deuterium, N(R BNE-6 )2, OR BNE-6 , Si(RBNE-6 )3, B(OR BNE-6 )2, B(R BNE-6 )2, OSO2R BNE-6 ,CF3,CN,F,Cl,Br,I, C1-C 40 Alkyl, This is a group consisting of one or more substituents R BNE-6 is selectively substituted with where one or more non-adjacent CH groups are R BNE-6 C=CR BNE-6 , C≡C, Si(R BNE-6 )2, Ge(R BNE-6 )2, Sn(R BNE-6 )2, C=O, C=S, C=Se, C=NR BNE-6 , P(=O)(R BNE-6 ), SO, SO2, NR BNE-6 , O, S or CONR BNE-6 is selectively substituted with C1-C 40 Alkoxy, This is a group consisting of one or more substituents R BNE-6 is selectively substituted with where one or more non-adjacent CH groups are R BNE-6 C=CR BNE-6 , C≡C, Si(R BNE-6 )2, Ge(R BNE-6 )2, Sn(R BNE-6 )2, C=O, C=S, C=Se, C=NR BNE-6 , P(=O)(R BNE-6 ), SO, SO2, NR BNE-6 , O, S or CONR BNE-6 is selectively substituted with C1-C 40 thioalkoxy, This is a group consisting of one or more substituents R BNE-6 is selectively substituted with where one or more non-adjacent CH groups are R BNE-6 C=CR BNE-6 , C≡C, Si(R BNE-6 )2, Ge(R BNE-6 )2, Sn(R BNE-6 )2, C=O, C=S, C=Se, C=NR BNE-6 , P(=O)(R BNE-6), SO, SO2, NR BNE-6 , O, S or CONR BNE-6 is selectively substituted with C2-C 40 alkenyl, This is a group consisting of one or more substituents R BNE-6 is selectively substituted with where one or more non-adjacent CH groups are R BNE-6 C=CR BNE-6 , C≡C, Si(R BNE-6 )2, Ge(R BNE-6 )2, Sn(R BNE-6 )2, C=O, C=S, C=Se, C=NR BNE-6 , P(=O)(R BNE-6 ), SO, SO2, NR BNE-6 , O, S or CONR BNE-6 is selectively substituted with C2-C 40 Alkynyl, This is a group consisting of one or more substituents R BNE-6 is selectively substituted with where one or more non-adjacent CH groups are R BNE-6 C=CR BNE-6 , C≡C, Si(R BNE-6 )2, Ge(R BNE-6 )2, Sn(R BNE-6 )2, C=O, C=S, C=Se, C=NR BNE-6 , P(=O)(R BNE-6 ), SO, SO2, NR BNE-6 , O, S or CONR BNE-6 is selectively substituted with C6-C 60 aryl, This is a group consisting of one or more substituents R BNE-6 is opti...

Claims

1. 1. An organic electroluminescent device comprising at least one light-emitting layer B consisting of one or more sublayers adjacent to one another and comprising, in total: (i) The lowest excited singlet state energy level E(S1 Ｈ ) and the lowest excited triplet state energy level E(T1 Ｈ At least one host material H Ｂ , (ii) The lowest excited singlet state energy level E(S1 Ｐ ) and the lowest excited triplet state energy level E(T1 Ｐ ) at least one phosphorescent material P Ｂ , (iii) The lowest excited singlet state energy level E(S1 Ｓ ) and the lowest excited triplet state energy level E(T1 Ｓ ) and emitting light having a full width at half maximum (FWHM) of 0.25 eV or less. Ｂ , and selectively (iv) The lowest excited singlet state energy level E(S1 Ｅ ) and the lowest excited triplet state energy level E(T1 Ｅ At least one thermally activated delayed fluorescent (TADF) material E Ｂ , wherein one or more sublayers located on the outer surface of the light-emitting layer B are made of a phosphorescent material P Ｂ , small full width at half maximum (FWHM) emitter S Ｂ and thermally activated delayed fluorescence (TADF) material E Ｂ and at least one material selected from the group consisting of: wherein optionally at least one thermally activated delayed fluorescent (TADF) material E Ｂ is the excited state lifetime τ(E Ｂ ) and The relationships expressed by the following equations (1) and (2) apply: E(T1) Ｈ )>E(D1 Ｐ ) (1) E (T1) Ｐ )>E(S1 Ｓ ) (2).

2. 2. The organic electroluminescent device according to claim 1, wherein at least one of the one or more sublayers of the at least one light-emitting layer B comprises: (iv) The lowest excited singlet state energy level E(S1 Ｅ ) and the lowest excited triplet state energy level E(T1 Ｅ At least one thermally activated delayed fluorescent (TADF) material E Ｂ .

3. 1. An organic electroluminescent device comprising at least one light-emitting layer B consisting of one or more sublayers adjacent to one another and comprising, in total: (i) The lowest excited singlet state energy level E(S1 Ｈ ) and the lowest excited triplet state energy level E(T1 Ｈ At least one host material H Ｂ , (ii) The lowest excited singlet state energy level E(S1 Ｐ ) and the lowest excited triplet state energy level E(T1 Ｐ ) at least one phosphorescent material P Ｂ , (iii) The lowest excited singlet state energy level E(S1 Ｓ ) and the lowest excited triplet state energy level E(T1 Ｓ ) and emitting light having a full width at half maximum (FWHM) of 0.25 eV or less. Ｂ , and (iv) The lowest excited singlet state energy level E(S1 Ｅ ) and the lowest excited triplet state energy level E(T1 Ｅ At least one thermally activated delayed fluorescent (TADF) material E Ｂ , wherein one or more sublayers located on the outer surface of the light-emitting layer B are made of a phosphorescent material P Ｂ , small full width at half maximum (FWHM) emitter S Ｂ and thermally activated delayed fluorescence (TADF) material E Ｂ and at least one material selected from the group consisting of: wherein at least one thermally activated delayed fluorescent (TADF) material E Ｂ is the excited state lifetime τ(E Ｂ ) and Each TADF material E Ｂ teeth, (i) The lowest excited singlet state energy level E(S1 Ｅ ) and the lowest excited triplet state energy level E(T1 Ｅ ) ΔE ＳＴ a value of less than 0.4 eV, (ii) exhibit a photoluminescence quantum yield (PLQY) greater than 30%;

4. At least one TADF material E Ｂ is the excited state lifetime τ(E Ｂ The organic electroluminescence device according to claim 1 , wherein

5. At least one TADF material E Ｂ is the excited state lifetime τ(E Ｂ The organic electroluminescence device according to claim 1 , wherein

6. At least one sublayer is made of exactly one TADF material E Ｂ and exactly one phosphorescent material P Ｂ The organic electroluminescence device according to claim 1 , comprising:

7. A sublayer is made of exactly one TADF material E Ｂ and the other or identical sublayers contain exactly one phosphorescent material P Ｂ and exactly one small FWHM emitter S Ｂ The organic electroluminescence device according to claim 1 , comprising:

8. The organic electroluminescent device according to claim 1 , wherein the relationships represented by the following formulas (3) and (4) apply: E(T1) Ｈ )>E(D1 Ｅ ) (3) E(T1) Ｅ )>E(D1 Ｐ ) (4).

9. At least one phosphorescent material P Ｂ is the excited state lifetime τ(P Ｂ 9. The organic electroluminescence device according to claim 1, wherein

10. At least one phosphorescent material P Ｂ is the excited state lifetime τ(P Ｂ 10. The organic electroluminescence device according to claim 1, wherein

11. 11. The organic electroluminescent device according to claim 1, wherein the one or more sublayers entirely comprise or consist of: (i) 30 to 99.8 wt % of one or more host materials H Ｂ , (ii) 0.1 to 30% by weight of one or more phosphorescent materials P Ｂ , (iii) 0.1 to 10 wt. % of one or more small FWHM emitters S Ｂ , and selectively (iv) 0 to 69.8 wt. % of one or more TADF materials E Ｂ , and selectively (v) 0 to 69.8 wt. % of one or more solvents.

12. 12. The organic electroluminescent device according to claim 1, wherein the at least one light-emitting layer B consists of exactly one (sub)layer.

13. 1. A method of generating light, comprising the steps of: (i) providing an organic electroluminescent device according to any one of claims 1 to 12; and (ii) applying a current to the organic electroluminescent device;

14. 14. The method of claim 13, wherein light is generated in a wavelength range selected from one of the following wavelength ranges: (i) 510 nm to 550 nm, or (ii) 440 nm to 470 nm, or (iii) 610 nm to 665 nm.

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