Semiconductor manufacturing equipment components

The AlN ceramic substrate with a higher oxygen content surface layer region addresses particle generation issues by increasing hardness and heat absorption, enhancing wafer processing quality in semiconductor manufacturing equipment.

JP7828360B2Active Publication Date: 2026-03-11NGK CORP
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Filing Date
2022-10-14
Publication Date
2026-03-11

AI Technical Summary

Technical Problem

Existing semiconductor manufacturing equipment components with AlN ceramic substrates and resistance heating elements face issues with particle generation due to dross formation on linear laser marks, which are a source of impurities.

Method used

The AlN ceramic substrate is modified with a surface layer region having a higher oxygen content than the base material region, making it harder and dross-free, and optionally blackened to absorb heat uniformly, thereby preventing particle generation.

Benefits of technology

The modified AlN ceramic substrate effectively suppresses particle generation during wafer processing by enhancing hardness and heat absorption, ensuring consistent wafer temperature uniformity and reducing dross formation.

✦ Generated by Eureka AI based on patent content.

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Patent Text Reader

Abstract

A member for a semiconductor manufacturing device according to the present invention is such that projections for wafer mounting are provided on the surface of an AlN ceramic substrate. The portion of the AlN ceramic substrate on which projections are not provided has a surface layer region from the surface to a prescribed depth and a base material region below the surface layer region. The prescribed distance is 5 µm or less. The oxygen content of the surface layer region is higher than the oxygen content of the base material region.
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Citation Information

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