Semiconductor module

Abstract

To provide a semiconductor module capable of preventing epoxy resin from adhering to terminals to which at least one of high current and high voltage is supplied.SOLUTION: A semiconductor module 1A has a sealing portion 81u formed of epoxy resin to encapsulate transistors 211-281, an intermediate terminal Mu connected to transistors 211-281 with a fastening surface 751 to which a cable connected to a load to be driven is fastened in a direction intersecting the thickness direction of sealing portion 81u, and a structure 31u which is disposed between the sealing portion 81u and the fastening surface 751, and in which the input portions 411-471, 511-571 are higher than the surface 811 of the sealing portion 81u and the fastening surface 751.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] The present invention relates to a semiconductor module applied to a power conversion device or the like.

Background Art

[0002] Patent Document 1 discloses a semiconductor module including a base plate, a resin case provided on the base plate, three main terminals attached to the resin case, a plurality of semiconductor chips provided on the base plate in a hollow space of the resin case, and a sealing material injected into the hollow space. Patent Document 2 discloses a semiconductor module including a plurality of semiconductor chips, a resin case housing the plurality of semiconductor chips, input terminals and three-phase output terminals connected to a main power source provided on the surface of the resin case, and a resin for sealing the plurality of semiconductor chips. Patent Document 3 discloses a semiconductor module including a plurality of transistors, a package housing the plurality of transistors, and input terminals for power supply and output terminals connected to a motor fixed to the package.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Patent Document 3

Summary of the Invention

Problems to be Solved by the Invention

[0004] [[ID=四十二]] The main terminals of the semiconductor module disclosed in Patent Document 1, the input terminals and three-phase output terminals of the semiconductor module disclosed in Patent Document 2, and the input terminals of the semiconductor module disclosed in Patent Document 3 Output terminalsThese terminals are subjected to high currents and high voltages compared to control terminals connected to semiconductor chips and transistors. In conventional semiconductor modules, epoxy resin, which forms the sealing material, may adhere to these terminals where high currents flow or high voltages are applied. Epoxy resin is an insulating material. Therefore, when epoxy resin adheres to terminals where high currents flow or high voltages are applied, the contact resistance between these terminals and the designated cables connected to them increases, which can cause these terminals to overheat, or prevent the desired current from flowing or the desired voltage from being applied. As a result, the semiconductor module may experience problems such as reduced efficiency in driving loads such as motors, or even become unable to drive loads at all.

[0005] The object of the present invention is to provide a semiconductor module that can prevent epoxy resin from adhering to terminals to which at least one of a large current and a high voltage is supplied. [Means for solving the problem]

[0006] To achieve the above objective, a semiconductor module according to one aspect of the present invention includes a sealing portion formed of epoxy resin that encapsulates a plurality of switching elements, and an intermediate terminal connected to the plurality of switching elements, having a fastening surface on which a cable connected to a load to be driven is fastened in a direction intersecting the thickness direction of the sealing portion, Cases in which the casting area in which the sealing portion is cast is defined, A structure disposed between the sealing portion and the fastening surface, at least a portion of which is higher than the surface of the sealing portion and the fastening surface. 、 Equipped with 、 The intermediate terminal has the fastening surface at a position higher than the surface of the sealing portion, and the structure is When viewed from the side in the direction in which the sealing portion and the intermediate terminals are aligned, the structure comprises: a part of the case including a portion that extends above the fastening surface and overlaps with the fastening surface; and a plurality of control terminals provided on the upper surface of the part of the case between the sealing portion and the fastening surface, each having a surface with a predetermined extent in the part of the structure such that it shields the entire width of the intermediate terminals when viewed in the direction in which the sealing portion and the intermediate terminals are aligned, and arranged in a row when viewed from above. In a plan view, it is positioned between the sealing portion and the fastening surface, shielding the fastening surface. [Effects of the Invention]

[0007] According to one aspect of the present invention, it is possible to prevent epoxy resin from adhering to terminals to which at least one of a large current and a high voltage is supplied. [Brief explanation of the drawing]

[0008] [Figure 1] This is a schematic plan view showing an example of the general configuration of a semiconductor module according to the first embodiment of the present invention. [Figure 2] This figure schematically shows an example of the general configuration of a U-phase inverter section provided in a semiconductor module according to the first embodiment of the present invention. [Figure 3] This is an example of a schematic configuration of a U-phase inverter section provided in a semiconductor module according to the first embodiment of the present invention, and is a schematic cross-sectional view taken along the α-α line shown in Figure 2. [Figure 4] This is a circuit diagram of a U-phase inverter section provided in a semiconductor module according to the first embodiment of the present invention. [Figure 5] This figure illustrates the effect of a semiconductor module according to a first embodiment of the present invention, and schematically shows the vicinity of the intermediate terminal of a conventional semiconductor module. [Figure 6] This figure is for illustrating the configuration and effects of a semiconductor module structure according to a first embodiment of the present invention, and is a schematic enlarged view showing the vicinity of the structure. [Figure 7] This is a schematic enlarged view showing an example of a plurality of control terminals provided on a semiconductor module structure according to a modification of the first embodiment of the present invention. [Figure 8] This is a schematic plan view showing an example of the general configuration of a semiconductor module according to a second embodiment of the present invention. [Figure 9] This is an example of a schematic configuration of a U-phase inverter section provided in a semiconductor module according to a second embodiment of the present invention, and is a schematic cross-sectional view taken by gamma rays as shown in Figure 8. [Figure 10] This is a schematic cross-sectional view showing an example of the general configuration of a U-phase inverter section provided in a semiconductor module according to a third embodiment of the present invention. [Modes for carrying out the invention]

[0009] Each embodiment of the present invention illustrates an apparatus or method for embodying the technical concept of the present invention, and the technical concept of the present invention does not limit the materials, shapes, structures, arrangements, etc. of the components to those described below. The technical concept of the present invention can be modified in various ways within the technical scope defined by the claims described in the patent claims.

[0010] [First Embodiment] A semiconductor module according to the first embodiment of the present invention will be described with reference to Figures 1 to 7. First, the schematic configuration of the semiconductor module according to this embodiment will be described with reference to Figures 1 to 4. In this embodiment, a power conversion module capable of DC to AC conversion will be used as an example of the semiconductor module.

[0011] (Overall configuration of the semiconductor module) Figure 1 is a schematic plan view showing an example of the schematic configuration of the semiconductor module 1A according to this embodiment. In Figure 1, for ease of understanding, transistors 211, 221, 231, 241, 251, 261, 271, and 281, which are sealed by the sealing parts 81u, 81v, and 81w and are not visible, are shown with dashed lines. Figure 2 is a schematic diagram showing an example of the schematic configuration of the U-phase inverter section 12u provided in the semiconductor module 1A. In Figure 2, for ease of understanding, the sealing parts 81u, 81v, and 81w are omitted from the illustration. Figure 3 is a schematic cross-sectional view of the U-phase inverter section 12u cut along the α-α line shown in Figure 2. In Figure 3, for ease of understanding, bubbles and splashes caused by these bubbles that occur when forming the sealing parts 81u, 81v, and 81w are schematically illustrated. Figure 4 is a circuit diagram of the inverter circuit 121 provided in the U-phase inverter section 12u.

[0012] As shown in FIG. 1, the semiconductor module 1A according to the present embodiment includes a sealing portion 81u formed of an epoxy resin and sealing a plurality (eight in the present embodiment) of transistors (an example of a switching element) 211, 221, 231, 241, 251, 261, 271, 281. The semiconductor module 1A includes a sealing portion 81v formed of an epoxy resin and sealing a plurality (eight in the present embodiment) of transistors (an example of a switching element) 211, 221, 231, 241, 251, 261, 271, 281. The semiconductor module 1A includes a sealing portion 81w formed of an epoxy resin and sealing a plurality (eight in the present embodiment) of transistors (an example of a switching element) 211, 221, 231, 241, 251, 261, 271, 281. Hereinafter, the transistors 211, 221, 231, 241, 251, 261, 271, 281 may be abbreviated as "transistors 211 to 281".

[0013] The semiconductor module 1A has a fastening surface 751 to which a cable (not shown) connected to a load (not shown) to be driven in a direction intersecting the thickness direction of the sealing portion 81u is fastened, and includes an intermediate terminal Mu connected to the plurality of transistors 211 to 281. The semiconductor module 1A has a fastening surface 751 to which a cable connected to a load to be driven in a direction intersecting the thickness direction of the sealing portion 81v is fastened, and includes an intermediate terminal Mv connected to the plurality of transistors 211 to 281. The semiconductor module 1A has a fastening surface 751 to which a cable connected to a load to be driven in a direction intersecting the thickness direction of the sealing portion 81w is fastened, and includes an intermediate terminal Mw connected to the plurality of transistors 211 to 281.

[0014] As shown in FIG. 1, the semiconductor module 1A has a casting region where the sealing portion 81u is cast 113u , a case 11 that defines a casting region 113v where the sealing portion 81v is cast and a casting region 113w where the sealing portion 81w is cast. The case 11 is formed of, for example, a thermoplastic resin.

[0015] Case 11 has a rectangular shape in plan view (in the thickness direction of the sealing portions 81u, 81v, 81w). Case 11 has an annular peripheral portion 111 positioned at the periphery, and a partition portion 112 that divides the area enclosed by the peripheral portion 111 into casting areas 113u, 113v, and 113w. The partition portion 112 has areas 112a and 112b that extend along the longitudinal direction of the peripheral portion 111, an area 112c that separates the casting area 113u and the casting area 113v, and an area 112d that separates the casting area 113v and the casting area 113w.

[0016] The semiconductor module 1A has a U-phase positive terminal Pu connected to the positive polarity side of the DC power. The semiconductor module 1A also has a U-phase negative terminal Nu located next to the positive terminal Pu and connected to the negative polarity side of the DC power. Furthermore, the semiconductor module 1A includes an intermediate terminal Mu, which serves as an output terminal for U-phase AC power. The positive terminal Pu, the negative terminal Nu, and the intermediate terminal Mu are located on the peripheral portion 111, separated by the casting region 113u. The positive terminal Pu and the negative terminal Nu are located on the region 112b side of the partition portion 112, while the intermediate terminal Mu is located on the region 112a side of the partition portion 112.

[0017] In the region 112a of the partition 112, the portion defining the casting region 113u is provided with gate signal output terminals 41, 43, 45, 47, 51, 53, 55, 57 and current detection terminals 42, 44, 46, 48, 52, 54, 56, 58, which are connected to transistors 211, 221, 231, 241, 251, 261, 271, 281 provided in the U-phase inverter section 12u. Hereinafter, the gate signal output terminals 41, 43, 45, 47, 51, 53, 55, 57 will be abbreviated as "gate signal output terminals 41~57", and the current detection terminals 42, 44, 46, 48, 52, 54, 56, 58 will be abbreviated as "current detection terminals 42~58".

[0018] The semiconductor module 1A has a V-phase positive terminal Pv connected to the positive polarity side of the DC power. The semiconductor module 1A also has a V-phase negative terminal Nv located next to the positive terminal Pv and connected to the negative polarity side of the DC power. Furthermore, the semiconductor module 1A includes an intermediate terminal Mv, which serves as an output terminal for V-phase AC power. The positive terminal Pv, the negative terminal Nv, and the intermediate terminal Mv are located on the peripheral portion 111, separated by the casting region 113v. The positive terminal Pv and the negative terminal Nv are located on the region 112b side of the partition portion 112, while the intermediate terminal Mv is located on the region 112a side of the partition portion 112.

[0019] In the region 112a of the partition 112, the portion defining the casting region 113v is equipped with gate signal output terminals 41 to 57 and current detection terminals 42 to 58 connected to transistors 211 to 281 provided in the V-phase inverter section 12v.

[0020] The semiconductor module 1A has a W-phase positive terminal Pw connected to the positive polarity side of the DC power. The semiconductor module 1A also has a W-phase negative terminal Nw located next to the positive terminal Pw and connected to the negative polarity side of the DC power. Furthermore, the semiconductor module 1A includes an intermediate terminal Mw, which serves as an output terminal for W-phase AC power. The positive terminal Pw, the negative terminal Nw, and the intermediate terminal Mw are located on the peripheral portion 111, separated by the casting region 113w. The positive terminal Pw and the negative terminal Nw are located on the region 112b side of the partition portion 112, while the intermediate terminal Mw is located on the region 112a side of the partition portion 112.

[0021] In the area 112a of the partition 112 that defines the casting area 113w, gate signal output terminals 41 to 57 and current detection terminals 42 to 58 connected to transistors 211 to 281 provided in the W-phase inverter section 12w are arranged.

[0022] As shown in Figure 1, the semiconductor module 1A includes a structure 31u positioned between the sealing portion 81u and the fastening surface 751 of the intermediate terminal Mu, with at least a portion of it being higher than the surface of the sealing portion 81u and the fastening surface 751. In this embodiment, the structure 31u is a transistor positioned within the casting area 113u Ta2 The structure 31u has gate signal output terminals 53 and 55 (an example of multiple control terminals) which output gate signals (an example of control signals) to control each of the 61 and 271. In addition to the gate signal output terminals 53 and 55, the structure 31u also has current detection terminals 52, 54, and 56. As will be described in detail later, when the sealing part 81u is cast into the casting area 113u, unexpected air bubbles may burst, causing splashes of the forming material that forms the sealing part 81u, i.e., the sealing resin (epoxy resin in this embodiment), to scatter. The structure 31u having at least gate signal output terminals 53 and 55 is designed to prevent such splashes from adhering to the fastening surface 751 of the intermediate terminal Mu.

[0023] The semiconductor module 1A includes a structure 31v positioned between the sealing portion 81v and the fastening surface 751 of the intermediate terminal Mv, with at least a portion of it being higher than the surface of the sealing portion 81v and the fastening surface 751. In this embodiment, the structure 31v is a transistor positioned within the casting area 113v Ta2 The structure 31v has gate signal output terminals 53 and 55 (an example of multiple control terminals) which output gate signals (an example of control signals) to control each of 61 and 271. In addition to the gate signal output terminals 53 and 55, the structure 31v also has current detection terminals 52, 54, and 56. As will be described in detail later, the structure 31v having at least the gate signal output terminals 53 and 55 is configured, similar to the structure 31u, to prevent splashes of the sealing resin that form the sealing part 81v from adhering to the fastening surface 751 of the intermediate terminal Mv when the sealing part 81v is cast into the casting area 113v.

[0024] The semiconductor module 1A includes a structure 31w positioned between the sealing portion 81w and the fastening surface 751 of the intermediate terminal Mw, with at least a portion of it being higher than the surface of the sealing portion 81w and the fastening surface 751. In this embodiment, the structure 31w is a transistor positioned within the casting area 113w Ta2 The structure 31w has gate signal output terminals 53 and 55 (an example of multiple control terminals) which output gate signals (an example of control signals) to control each of the 61 and 271. In addition to the gate signal output terminals 53 and 55, the structure 31w also has current detection terminals 52, 54, and 56. As will be described in detail later, the structure 31w having at least the gate signal output terminals 53 and 55 is configured, similar to the structure 31u, to prevent splashes of the sealing resin that form the sealing part 81w from adhering to the fastening surface 751 of the intermediate terminal Mw when the sealing part 81w is cast into the casting area 113w.

[0025] Case 11 has fixing parts 115u formed at each of the four corners of the casting area 113u, fixing parts 115v formed at each of the four corners of the casting area 113v, and fixing parts 115w formed at each of the four corners of the casting area 113w. Two fixing parts 115u, 115v, and 115w are arranged in each of the regions 112a and 112b of the partition 112. The fixing parts 115u, 115v, and 115w are formed to be higher than the peripheral edge 111 of case 11, with reference to the surface 114 (not shown in Figure 1, see Figure 3) of case 11 on the side to which the DBC (Direct Bonded Copper) substrate 14 (not shown in Figure 1, see Figure 3) is attached. The peripheral edge 111, partition 112, and fixing parts 115u, 115v, and 115w are formed integrally.

[0026] The four fixing parts 115u are provided to fix a circuit board (not shown) on which a control device (not shown) for controlling the inverter circuit 121 (not shown in Figure 1, see Figure 2) provided in the U-phase inverter section 12u is mounted. The four fixing parts 115v are provided to fix a circuit board (not shown) on which a control device (not shown) for controlling the inverter circuit (not shown) provided in the V-phase inverter section 12v is mounted. The four fixing parts 115w are provided to fix a circuit board (not shown) on which a control device (not shown) for controlling the inverter circuit (not shown) provided in the W-phase inverter section 12w is mounted.

[0027] As will be described in detail later, transistors 211, 221, 231, and 241 provided in the U-phase inverter section 12u are connected in parallel, and transistors 251, 261, 271, and 281 are connected in parallel. In the U-phase inverter section 12u, the parallel-connected transistors 211, 221, 231, and 241, and the parallel-connected transistors 251, 261, 271, and 281 are connected in series between the positive terminal Pu and the negative terminal Nu. In the U-phase inverter section 12u, the connection points where transistors 211 to 281 are connected to each other are connected to the intermediate terminal Mu, where U-phase AC power is output. In other words, the transistors 211, 221, 231, and 241 provided in the U-phase inverter section 12u become part of the components that make up the upper arm Uup of the U-phase AC power. transistor 251, 261, 271, and 281 are part of the components that make up the lower arm Ulo of the U-phase AC power.

[0028] Transistors 211-281 provided in the V-phase inverter section 12v are connected between the positive terminal Pv and the negative terminal Nv in the same way as the connection between the positive terminal Pu and the negative terminal Nu of transistors 211-281 provided in the U-phase inverter section 12u. Therefore, transistors 211, 221, 231, and 241 provided in the V-phase inverter section 12v become part of the components that constitute the upper arm Vup of the V-phase AC power. transistor 251, 261, 271, and 281 are part of the components that make up the lower arm Vlo of the V-phase AC power.

[0029] Transistors 211-281 provided in the W-phase inverter section 12w are connected between the positive terminal Pw and the negative terminal Nw in the same way as the connection between the positive terminal Pu and the negative terminal Nu of transistors 211-281 provided in the U-phase inverter section 12u. Therefore, transistors 211, 221, 231, and 241 provided in the W-phase inverter section 12w become part of the components that constitute the upper arm Wup of the W-phase AC power. transistor 251, 261, 271, and 281 are part of the components that make up the lower arm Wlo of the W-phase AC power.

[0030] (Configuration of the inverter section) Next, the general configurations of the U-phase inverter section 12u, the V-phase inverter section 12v, and the W-phase inverter section 12w provided in the semiconductor module 1A will be explained using Figures 2 to 4 with reference to Figure 1. The U-phase inverter section 12u, the V-phase inverter section 12v, and the W-phase inverter section 12w have similar configurations. Therefore, the general configurations of the U-phase inverter section 12u, the V-phase inverter section 12v, and the W-phase inverter section 12w will be explained using the U-phase inverter section 12u as an example.

[0031] As shown in Figures 2 and 3, the U-phase inverter section 12u has a DBC substrate 14 and an inverter circuit 121 formed on the DBC substrate 14. The DBC substrate 14 has an insulating substrate 140 formed in the shape of a rectangular plate with an area approximately the same as the opening of the casting region 113u. The DBC substrate 14 has a sealing portion 81u (Figure 2 So The DBC substrate 14 has a positive electrode side wiring pattern 141, intermediate wiring patterns 142, 143 and a negative electrode side wiring pattern 144 formed on the insulating substrate 140 on the side that is sealed by the sealing portion 81u (not shown, see Figure 3). The positive electrode side wiring pattern 141, intermediate wiring patterns 142, 143 and the negative electrode side wiring pattern 144 are made of a conductive material (e.g., copper). The DBC substrate 14 has a rectangular flat heat transfer pattern 145 (Figure 2) formed on the insulating substrate 140 on the back side of the side that is sealed by the sealing portion 81u. So It has (not shown, see Figure 3). As shown in Figure 3, the DBC substrate 14 is attached to the case 11 by adhesive 83.

[0032] Although not shown in the diagram, the semiconductor module 1A has a cooler (not shown) attached to the case 11, which is located on the surface 114 side of the case 11 and in contact with the heat transfer pattern 145. The cooler is mechanically fixed to the case 11, for example, by adhesive. The DBC substrate 14 is soldered to the cooler, for example. As a result, the semiconductor module 1A can dissipate the heat generated from the transistors 211 to 281 on the DBC substrate 14 to the outside via the cooler.

[0033] As shown in Figure 2, the positive electrode wiring pattern 141 has a T-shape overall. Specifically, it has a first portion 141a that extends in the direction in which the gate signal output terminals 41-57 and current detection terminals 42-58 are aligned, and extends from the vicinity of the gate signal output terminals 41-57 and current detection terminals 42-58 to approximately the center of the insulating substrate 140, and a second portion 141b that extends from the first portion 141a toward the positive electrode terminal Pu and negative electrode terminal Nu. In plan view, the first portion 141a has a rectangular shape. In plan view, the second portion 141b has an elongated rectangular shape that extends from approximately the center of one of the long sides of the first portion 141a toward the positive electrode terminal Pu and negative electrode terminal Nu.

[0034] As shown in Figure 2, the intermediate wiring patterns 142 and 143 are arranged, for example, on either side of the second portion 141b of the positive electrode side wiring pattern 141. The intermediate wiring patterns 142 and 143 are arranged, for example, along the long side of the second portion 141b of the positive electrode side wiring pattern 141. The intermediate wiring patterns 142 and 143 each have, for example, a rectangular shape in plan view. The intermediate wiring pattern 142 is located on the peripheral edge 111 side of the case 11. The intermediate wiring pattern 143 is located on the region 112c side of the partition 112 that constitutes the case 11 (the casting region 113v side (not shown in Figure 2, see Figure 1) side).

[0035] As shown in Figure 2, the negative side wiring pattern 144 is an intermediate wiring pattern 142, and the positive side wiring pattern 141 It is positioned between the second part 141b and the intermediate wiring pattern 143 and the region 112b of the partition 112. The negative electrode side wiring pattern 144 is formed in a rectangular shape in plan view, for example, with the short side of the casting region 113u being the long side. The negative electrode side wiring pattern 144 is positioned between the positive electrode side wiring pattern 141The negative electrode side wiring pattern 144 has a long side that is approximately the same length as the long side of the first part 141a. The negative electrode side wiring pattern 144 is positioned opposite the first part 141a with a gap equal to the length of the second part 141b of the positive electrode side wiring pattern 141. The intermediate wiring patterns 142 and 143 are positioned in the gap between the positive electrode side wiring pattern 141 and the negative electrode side wiring pattern 144.

[0036] As shown in Figures 2 and 3, the positive terminal Pu extends from the peripheral edge 111 of the case 11 to the second portion 141b of the positive side wiring pattern 141. As shown in Figure 3, the positive terminal Pu runs along the side wall of the peripheral edge 111 on the casting area 113u side, and is connected to the end (tip) of the second portion 141b of the positive side wiring pattern 141 by passing through the area 112b of the partition 112 that constitutes the case 11 and above the negative side wiring pattern 144. In this way, the positive terminal Pu is mechanically and electrically connected to the positive side wiring pattern 141.

[0037] The positive electrode terminal Pu has a fastening portion 71u (see Figures 2 and 3) on its peripheral edge 111, which is exposed to the outside and has a fastening portion 71u to which a cable (not shown) connected to the positive side of a DC power supply (not shown) that generates DC power is fastened. The surface of the fastening portion 71u that is exposed to the outside is the fastening surface to which the cable is fastened. The positive electrode terminal Pu has a fixing portion 72u below the fastening portion 71u, which is embedded in the peripheral edge 111 and has a screw (not shown) fixed to which the cable is fastened to the fastening portion 71u. A through hole is formed approximately in the center of the fastening portion 71u, passing through the fastening portion 71u. The fixing portion 72u has a cylindrical hole formed at a position corresponding to the through hole. The inner wall surface of the fixing portion 72u that constitutes the hole is threaded for fixing the screw. This allows the cable to be screwed to the positive electrode terminal Pu.

[0038] As shown in Figures 2 and 3, Negative terminal NuThe negative electrode terminal Nu extends from the peripheral edge 111 of the case 11 to the negative electrode wiring pattern 144. As shown in Figure 3, the negative electrode terminal Nu passes through the region 112b of the partition 112 that constitutes the case 11 without contacting the positive electrode terminal Pu, and is bifurcated to connect to two locations on the negative electrode wiring pattern 144. In this way, the negative electrode terminal Nu is mechanically and electrically connected to the negative electrode wiring pattern 144.

[0039] The negative terminal Nu has a fastening portion 73u that is exposed to the outside at its peripheral portion 111 and to which a cable (not shown) connected to the negative side of a DC power supply that generates DC power is fastened. The surface of the fastening portion 73u that is exposed to the outside is the fastening surface to which the cable is fastened. The negative terminal Nu is provided embedded in the peripheral portion 111 below the fastening portion 73u and the cable Fastening part 73 A screw (not shown) for fastening to u is fixed in place. Fixed part (Not shown) The fastening portion 73u has the same configuration as the fastening portion 71u and is provided on the negative electrode terminal Nu Fixed part It has the same configuration as the fixed part 72u. This allows the cable to be screwed to the negative terminal Nu.

[0040] As shown in Figures 2 and 3, the intermediate terminal Mu extends from the peripheral edge 111 of the case 11 to the intermediate wiring patterns 142 and 143. As shown in Figure 3, the intermediate terminal Mu runs along the side wall of the peripheral edge 111 on the casting area 113u side, and is connected to the intermediate wiring patterns 142 and 143 by passing over the first portion 141a and the second portion 142b of the positive electrode side wiring pattern 141 within the area 112a of the partition portion 112 that constitutes the case 11. The end (tip) of the intermediate terminal Mu on the intermediate wiring pattern 142 and 143 side has a bifurcated shape, splitting towards the intermediate wiring patterns 142 and 143 respectively above the end of the second portion 142b on the first portion 141a side of the positive electrode side wiring pattern 141. One of the bifurcated ends of the tip of the intermediate terminal Mu is connected to the intermediate wiring pattern 142, and the other bifurcated end of the tip of the intermediate terminal Mu is connected to the intermediate wiring pattern 143. As a result, the intermediate terminal Mu is mechanically and electrically connected to the intermediate wiring patterns 142 and 143.

[0041] The intermediate terminal Mu has a fastening portion 75u (see Figures 2 and 3) that is exposed to the outside at its peripheral edge 111 and to which a cable (not shown) connected to the load to be driven (e.g., a motor) is fastened. The surface of the fastening portion 75u that is exposed to the outside becomes the fastening surface 751 to which the cable is fastened. Below the fastening portion 75u, the intermediate terminal Mu has a fixing portion 76u that is embedded in the peripheral edge 111 and to which a screw (not shown) for screwing the cable to the fastening portion 75u is fixed. The fastening portion 75u has the same configuration as the fastening portion 71u, and the fixing portion 76u has the same configuration as the fixing portion 72u. This allows the cable to be screwed to the intermediate terminal Mu.

[0042] As shown in Figure 2, gate signal output terminals 41-57 and current detection terminals 42-58 are arranged in region 112a of the partition portion 112 that constitutes the case 11. Each of the gate signal output terminals 41-57 and current detection terminals 42-58 is formed of a conductive material (e.g., copper) and has a bent thin plate shape. The gate signal output terminals 41-57 and current detection terminals 42-58 are arranged in region 112a so as not to come into contact with the intermediate terminal Mu. Each of the gate signal output terminals 41-57 and current detection terminals 42-58 has, for example, an L-shape.

[0043] As shown in Figures 2 and 3, the current detection terminal 54 has an output section 541 that is partially embedded in region 112a and an input section 542 that is partially exposed in the casting region 113u. The output section 541 extends in a direction substantially parallel to the in-plane direction of the inner wall surface of the case 11 (more specifically region 112a) that defines a part of the casting region 113u. A part of the output section 541 protrudes from region 112a and is exposed to the outside. The part of the output section 541 that is exposed to the outside is connected to a circuit board on which a control device (hereinafter sometimes referred to as the "U-phase control device") for controlling the inverter circuit 121 provided in the U-phase inverter section 12u is mounted.

[0044] The input section 542 of the current detection terminal 54 extends in a direction approximately perpendicular to the in-plane direction of the inner wall surface of the case 11 (more specifically, region 112a). The input section 542 is connected to the transistor 261 by a bonding wire 62f.

[0045] The gate signal output terminal 41 has the same configuration as the current detection terminal 54. That is, the gate signal output terminal 41 has an input section 411 having the same configuration as the output section 541 of the current detection terminal 54, and an output section 412 having the same configuration as the input section 542 of the current detection terminal 54. The portion of the input section 411 that is exposed to the outside is connected to the circuit board on which the U-phase control device is mounted. The output section 412 is connected to the transistor 211 by a bonding wire 61a.

[0046] The current detection terminal 42 has the same configuration as the current detection terminal 54. That is, the current detection terminal 42 has an output section 421 that has the same configuration as the output section 541 of the current detection terminal 54, and an input section 542 that has the same configuration as the current detection terminal 54. Input section 422 It has the following features. The portion of the output section 421 that is exposed to the outside is connected to the circuit board on which the U-phase control device is mounted. Input section 422 It is connected to transistor 211 by bonding wire 62a.

[0047] The gate signal output terminal 43 has the same configuration as the current detection terminal 54. That is, the gate signal output terminal 43 has an input section 431 having the same configuration as the output section 541 of the current detection terminal 54, and an output section 432 having the same configuration as the input section 542 of the current detection terminal 54. The portion of the input section 431 that is exposed to the outside is connected to the circuit board on which the U-phase control device is mounted. The output section 432 is connected to the transistor 221 by bonding wire 61b.

[0048] The current detection terminal 44 has the same configuration as the current detection terminal 54. That is, the current detection terminal 44 has an output section 441 having the same configuration as the output section 541 of the current detection terminal 54, and an input section 442 having the same configuration as the input section 542 of the current detection terminal 54. The portion of the output section 441 that is exposed to the outside is connected to the circuit board on which the U-phase control device is mounted. The input section 442 is connected to the transistor 221 by bonding wire 62b.

[0049] The gate signal output terminal 45 has the same configuration as the current detection terminal 54. That is, the gate signal output terminal 45 has an input section 451 with the same configuration as the output section 541 of the current detection terminal 54, and an output section 452 with the same configuration as the input section 542 of the current detection terminal 54. The portion of the input section 451 that is exposed to the outside is connected to the circuit board on which the U-phase control device is mounted. The output section 452 is connected to the transistor 231 by bonding wire 61c.

[0050] The current detection terminal 46 has the same configuration as the current detection terminal 54. That is, the current detection terminal 46 has an output section 461 having the same configuration as the output section 541 of the current detection terminal 54, and an input section 462 having the same configuration as the input section 542 of the current detection terminal 54. The portion of the output section 461 that is exposed to the outside is connected to the circuit board on which the U-phase control device is mounted. Input section 46 2 is It is connected to transistor 231 by bonding wire 62c.

[0051] The gate signal output terminal 47 has the same configuration as the current detection terminal 54. That is, the gate signal output terminal 47 has an input section 471 having the same configuration as the output section 541 of the current detection terminal 54, and an output section 472 having the same configuration as the input section 542 of the current detection terminal 54. The portion of the input section 471 that is exposed to the outside is connected to the circuit board on which the U-phase control device is mounted. The output section 472 is connected to the transistor 241 by bonding wires 61d.

[0052] The current detection terminal 48 has the same configuration as the current detection terminal 54. That is, the current detection terminal 48 has an output section 481 having the same configuration as the output section 541 of the current detection terminal 54, and an input section 482 having the same configuration as the input section 542 of the current detection terminal 54. The portion of the output section 481 that is exposed to the outside is connected to the circuit board on which the U-phase control device is mounted. The input section 482 is connected to the transistor 241 by bonding wire 62d.

[0053] The gate signal output terminal 51 has the same configuration as the current detection terminal 54. That is, the gate signal output terminal 51 has an input section 511 having the same configuration as the output section 541 of the current detection terminal 54, and an output section 512 having the same configuration as the input section 542 of the current detection terminal 54. The portion of the input section 511 that is exposed to the outside is connected to the circuit board on which the U-phase control device is mounted. The output section 512 is connected to the transistor 251 by bonding wire 61e.

[0054] The current detection terminal 52 has the same configuration as the current detection terminal 54. That is, the current detection terminal 52 has an output section 521 having the same configuration as the output section 541 of the current detection terminal 54, and an input section 522 having the same configuration as the input section 542 of the current detection terminal 54. The portion of the output section 521 that is exposed to the outside is connected to the circuit board on which the U-phase control device is mounted. The input section 522 is connected to the transistor 251 by bonding wire 62e.

[0055] The gate signal output terminal 53 has the same configuration as the current detection terminal 54. That is, the gate signal output terminal 53 has an input section 531 with the same configuration as the output section 541 of the current detection terminal 54, and an output section 532 with the same configuration as the input section 542 of the current detection terminal 54. The portion of the input section 531 that is exposed to the outside is connected to the circuit board on which the U-phase control device is mounted. The output section 532 is connected to the transistor 261 by a bonding wire 61f.

[0056] The gate signal output terminal 55 has the same configuration as the current detection terminal 54. That is, the gate signal output terminal 55 has an input section 551 with the same configuration as the output section 541 of the current detection terminal 54, and an output section 552 with the same configuration as the input section 542 of the current detection terminal 54. The portion of the input section 551 that is exposed to the outside is connected to the circuit board on which the U-phase control device is mounted. The output section 552 is connected to the transistor 271 by a bonding wire 61g.

[0057] The current detection terminal 56 has the same configuration as the current detection terminal 54. That is, the current detection terminal 56 has an output section 561 having the same configuration as the output section 541 of the current detection terminal 54, and an input section 562 having the same configuration as the input section 542 of the current detection terminal 54. The portion of the output section 561 that is exposed to the outside is connected to the circuit board on which the U-phase control device is mounted. The input section 562 is connected to the transistor 271 by a bonding wire 62g.

[0058] The gate signal output terminal 57 has the same configuration as the current detection terminal 54. That is, the gate signal output terminal 57 has an input section 571 with the same configuration as the output section 541 of the current detection terminal 54, and an output section 572 with the same configuration as the input section 542 of the current detection terminal 54. The portion of the input section 571 that is exposed to the outside is connected to the circuit board on which the U-phase control device is mounted. The output section 572 is connected to the transistor 281 by a bonding wire 61h.

[0059] The current detection terminal 58 has the same configuration as the current detection terminal 54. That is, the current detection terminal 58 has an output section 581 with the same configuration as the output section 541 of the current detection terminal 54, and an input section 582 with the same configuration as the input section 542 of the current detection terminal 54. The portion of the output section 581 that is exposed to the outside is connected to the circuit board on which the U-phase control device is mounted. The input section 582 is connected to the transistor 281 by a bonding wire 62h.

[0060] Here, the connection relationships of the positive terminal Pu, negative terminal Nu, intermediate terminal Mu, and transistors 211-281 provided on semiconductor module 1A will be explained using Figures 2 and 4.

[0061] As shown in Figure 2, semiconductor module 1A includes transistors 211, 221, 231, and 241 and freewheeling diodes 212, 222, 232, and 242 arranged on the positive side wiring pattern 141. Semiconductor module 1A also includes transistors 251 and 261 and freewheeling diodes 252 and 262 arranged on the intermediate wiring pattern 142. Semiconductor module 1A also includes transistors 271 and 281 and freewheeling diodes 272 and 282 arranged on the intermediate wiring pattern 143. Hereafter, freewheeling diodes 212, 222, 232, 242, 252, 262, 272, and 282 may be abbreviated as "freewheeling diodes 212-282".

[0062] As shown in Figure 4, transistors 211 to 281 are composed of, for example, N-type metal-oxide-semiconductor field-effect transistors (MOSFETs). The freewheeling diode 212 is connected in antiparallel to transistor 211. The drain of transistor 211 is connected to the cathode of freewheeling diode 212, and the source of transistor 211 is connected to the anode of freewheeling diode 212. The semiconductor element 21 is composed of transistor 211 and freewheeling diode 212. In this embodiment, the semiconductor element 21 consists of transistor 211 and freewheeling diode 212 formed on separate semiconductor substrates (not shown) (see Figure 2), but transistor 211 and freewheeling diode 212 may also be formed on the same semiconductor substrate to form a single chip.

[0063] The freewheel diode 222 is connected in antiparallel to the transistor 221. The drain of transistor 221 is connected to the cathode of freewheel diode 222, and the source of transistor 221 is connected to the anode of freewheel diode 222. The transistor 221 and the freewheel diode 222 constitute the semiconductor element 22. In this embodiment, the semiconductor element 22 consists of transistor 221 and freewheel diode 222 formed on separate semiconductor substrates (not shown) (see Figure 2), but transistor 221 and freewheel diode 222 may also be formed on the same semiconductor substrate to form a single chip.

[0064] Transistors 211-281 and freewheeling diodes 212-282 have a trench structure. Transistors 211-281 have a gate and source exposed on one side and a drain exposed on the back side of that side. The gate and source are insulated from each other on that side. Freewheeling diodes 212-282 have an anode exposed on one side and a cathode exposed on the back side of that side.

[0065] As shown in Figure 2, the transistor 211 is mechanically and electrically connected to the first portion 141a of the positive side wiring pattern 141 by soldering its drain (not shown), which is exposed to the outside, to a predetermined location on the first portion 141a of the positive side wiring pattern 141 by soldering. The freewheeling diode 212 is mechanically and electrically connected to the first portion 141a of the positive side wiring pattern 141 by soldering its cathode (not shown), which is exposed to the outside, to a predetermined location on the first portion 141a of the positive side wiring pattern 141 by soldering. In this way, the drain of transistor 211 and the cathode of freewheeling diode 212 are electrically connected via the first portion 141a of the positive side wiring pattern 141.

[0066] The transistor 221 is mechanically and electrically connected to the first portion 141a of the positive side wiring pattern 141 by soldering its exposed drain (not shown) to a predetermined location on the first portion 141a of the positive side wiring pattern 141 using solder 85 (see Figure 3). The freewheeling diode 222 is mechanically and electrically connected to the first portion 141a of the positive side wiring pattern 141 by soldering its exposed cathode (not shown) to a predetermined location on the first portion 141a of the positive side wiring pattern 141 using solder 85 (see Figure 3). In this way, the transistor 221 drain and freewheel diode 222 The cathode is electrically connected via the first portion 141a of the positive side wiring pattern 141.

[0067] Thus, the drain of transistor 211, the cathode of freewheeling diode 212, the drain of transistor 221, and the cathode of freewheeling diode 222 are connected to the positive side wiring pattern 141. As a result, the drain of transistor 211, the cathode of freewheeling diode 212, the drain of transistor 221, and the cathode of freewheeling diode 222 are electrically connected to the positive terminal Pu via the positive side wiring pattern 141.

[0068] As shown in Figure 2, the source of transistor 211 and the outlet of freewheeling diode 212 Do is, electrically connected by bonding wire 63a. The ANOR of freewheeling diode 212 Do is The intermediate wiring pattern 142 is electrically connected by bonding wire 64a. The source of transistor 221 and the outlet of freewheeling diode 222 Do is , electrically connected by bonding wire 63b. The ANOR of freewheeling diode 222. Do is The intermediate wiring pattern 142 is electrically connected by bonding wire 64b. Each of the bonding wires 63a, 63b, 64a, and 64b consists of, for example, multiple wires (three in this embodiment).

[0069] Thus, the source of transistor 211 and the outlet of freewheeling diode 212 D, Source of transistor 221 and angle of freewheeling diode 222 Do is They are connected to each other by bonding wires 63a, 63b, 64a, 64b and intermediate wiring pattern 142. This connects the source of transistor 211 and the outlet of freewheeling diode 212. D, Source of transistor 221 and angle of freewheeling diode 222 Do is The intermediate terminal Mu is electrically connected via bonding wires 63a, 63b, 64a, 64b and intermediate wiring pattern 142.

[0070] Returning to Figure 4, the freewheeling diode 232 is connected in antiparallel to the transistor 231. The semiconductor element 23 is composed of the transistor 231 and the freewheeling diode 232. In this embodiment, the semiconductor element 23 consists of the transistor 231 and the freewheeling diode 232 formed on separate semiconductor substrates (not shown) (see Figure 2), but the transistor 231 and the freewheeling diode 232 may also be formed on the same semiconductor substrate to form a single chip.

[0071] The freewheel diode 242 is connected in antiparallel to the transistor 241. The semiconductor element 24 is composed of the transistor 241 and the freewheel diode 242. In this embodiment, the semiconductor element 24 consists of the transistor 241 and the freewheel diode 242 formed on separate semiconductor substrates (not shown) (see Figure 2), but the transistor 241 and the freewheel diode 242 may also be formed on the same semiconductor substrate to form a single chip.

[0072] As shown in Figure 2, semiconductor element 23 has the same configuration as semiconductor element 21 when transistor 211 is replaced with transistor 231, freewheeling diode 212 with freewheeling diode 232, bonding wire 63a with bonding wire 63c, bonding wire 64a with bonding wire 64c, and intermediate wiring pattern 142 with intermediate wiring pattern 143.

[0073] The semiconductor element 24 has the same configuration as the semiconductor element 22 when transistor 221 is read as transistor 241, freewheeling diode 222 is read as freewheeling diode 242, bonding wire 63b is read as bonding wire 63d, bonding wire 64b is read as bonding wire 64d, and intermediate wiring pattern 142 is read as intermediate wiring pattern 143.

[0074] Therefore, the drain of transistor 211 and the cathode of freewheeling diode 212, the drain of transistor 221 and the cathode of freewheeling diode 222, the drain of transistor 231 and the cathode of freewheeling diode 232, the drain of transistor 241 and the cathode of freewheeling diode 242 are connected via the first portion 141a of the positive side wiring pattern 141.

[0075] As shown in Figure 2, intermediate wiring patterns 142 and 143 are connected by an intermediate terminal Mu. Therefore, the source of transistor 211, the anode of freewheeling diode 212, the source of transistor 221, the anode of freewheeling diode 222, the source of transistor 231, the anode of freewheeling diode 232, the source of transistor 241, and the anode of freewheeling diode 242 are connected via bonding wires 64a, 64b, 64c, 64d, intermediate wiring patterns 142, 143, and the intermediate terminal Mu.

[0076] As a result, transistor 211, freewheeling diode 212, transistor 221, freewheeling diode 222, transistor 231, freewheeling diode 232, transistor 241, and freewheeling diode 242 are connected in parallel between the positive terminal Pu and the intermediate terminal Mu. Therefore, semiconductor elements 21, 22, 23, and 24 are connected in parallel between the positive terminal Pu and the intermediate terminal Mu, forming the upper arm Uup.

[0077] Returning to Figure 4, the freewheeling diode 252 is connected in antiparallel to the transistor 251. The semiconductor element 25 is composed of the transistor 251 and the freewheeling diode 252. In this embodiment, the semiconductor element 25 consists of the transistor 251 and the freewheeling diode 252, which are formed on separate semiconductor substrates (not shown) (see Figure 2), but the transistor 251 and the freewheeling diode 252 may also be formed on the same semiconductor substrate to form a single chip.

[0078] The freewheel diode 262 is connected in antiparallel to the transistor 261. The semiconductor element 26 is composed of the transistor 261 and the freewheel diode 262. In this embodiment, the semiconductor element 26 consists of the transistor 261 and the freewheel diode 262 formed on separate semiconductor substrates (not shown) (see Figure 2), but the transistor 261 and the freewheel diode 262 may also be formed on the same semiconductor substrate to form a single chip.

[0079] The freewheel diode 272 is connected in antiparallel to the transistor 271. The semiconductor element 27 is composed of the transistor 271 and the freewheel diode 272. In this embodiment, the semiconductor element 27 consists of the transistor 271 and the freewheel diode 272, which are formed on separate semiconductor substrates (not shown) (see Figure 2), but the transistor 271 and the freewheel diode 272 may also be formed on the same semiconductor substrate to form a single chip.

[0080] The freewheel diode 282 is connected in antiparallel to the transistor 281. The semiconductor element 28 is composed of the transistor 281 and the freewheel diode 282. In this embodiment, the semiconductor element 28 consists of the transistor 281 and the freewheel diode 282 formed on separate semiconductor substrates (not shown) (see Figure 2), but the transistor 281 and the freewheel diode 282 may also be formed on the same semiconductor substrate to form a single chip.

[0081] As shown in Figure 2, the semiconductor element 25 has the same configuration as the semiconductor element 21 when transistor 211 is replaced with transistor 251, freewheeling diode 212 is replaced with freewheeling diode 252, bonding wire 63a is replaced with bonding wire 65a, bonding wire 64a is replaced with bonding wire 66a, the first part 141a of the positive side wiring pattern 141 is replaced with the intermediate wiring pattern 142, and the intermediate wiring pattern 142 is replaced with the negative side wiring pattern 144.

[0082] The semiconductor element 26 is described as follows: transistor 221 is replaced with transistor 261, freewheeling diode 222 is replaced with freewheeling diode 262, bonding wire 63b is replaced with bonding wire 65b, and bonding wire 64b is replaced with bonding wire 66b By reinterpreting it this way, the semiconductor element 22 has the same configuration as when the intermediate wiring pattern 142 is reinterpreted as the negative electrode wiring pattern 144.

[0083] The semiconductor element 27 has the same configuration as the semiconductor element 21 when transistor 211 is replaced with transistor 271, freewheeling diode 212 is replaced with freewheeling diode 272, bonding wire 63a is replaced with bonding wire 65c, bonding wire 64a is replaced with bonding wire 66c, the first part 141a of the positive electrode side wiring pattern 141 is replaced with intermediate wiring pattern 143, and intermediate wiring pattern 142 is replaced with negative electrode side wiring pattern 144.

[0084] The semiconductor element 28 has the same configuration as the semiconductor element 22 when transistor 221 is read as transistor 281, freewheeling diode 222 is read as freewheeling diode 282, bonding wire 63b is read as bonding wire 65d, bonding wire 64b is read as bonding wire 66d, the first part 141a of the positive electrode side wiring pattern 141 is read as intermediate wiring pattern 143, and intermediate wiring pattern 142 is read as negative electrode side wiring pattern 144.

[0085] Intermediate wiring patterns 142 and 143 are connected by an intermediate terminal Mu. Therefore, the drain of transistor 251 and the cathode of freewheeling diode 252, the drain of transistor 261 and the cathode of freewheeling diode 262, the drain of transistor 271 and the cathode of freewheeling diode 272, the drain of transistor 281 and the cathode of freewheeling diode 282 are connected via intermediate wiring patterns 142 and 143 and the intermediate terminal Mu.

[0086] The source of transistor 251 and the anode of freewheeling diode 252, the source of transistor 261 and the anode of freewheeling diode 262, the source of transistor 271 and the anode of freewheeling diode 272, the source of transistor 281 and the anode of freewheeling diode 282 are connected via bonding wires 65a, 65b, 65c, 65d, 66a, 66b, 66c, 66d and the negative terminal wiring pattern 144.

[0087] As a result, transistor 251, freewheeling diode 252, transistor 261, freewheeling diode 262, transistor 271, freewheeling diode 272, transistor 281, and freewheeling diode 282 are connected in parallel between the intermediate terminal Mu and the negative terminal Nu. Therefore, semiconductor elements 25, 26, 27, and 28 are connected in parallel between the intermediate terminal Mu and the negative terminal Nu, forming the lower arm Ulo.

[0088] Structurally, when considering the connection relationships between semiconductor elements 21, 22, 23, 24, 25, 26, 27, and 28, the positive terminal Pu, the negative terminal Nu, and the intermediate terminal Mu, parallel-connected semiconductor elements 21 and 22 and parallel-connected semiconductor elements 25 and 26 are connected in series between the positive terminal Pu and the negative terminal Nu. Similarly, parallel-connected semiconductor elements 23 and 24 and parallel-connected semiconductor elements 27 and 28 are connected in series between the positive terminal Pu and the negative terminal Nu. Semiconductor elements 21, 22, 25, and 26 connected in series between the positive terminal Pu and the negative terminal Nu, and semiconductor elements 23, 24, 27, and 28 connected in series between the positive terminal Pu and the negative terminal Nu, are connected by the intermediate terminal Mu. Therefore, when considering the electrical connection relationships of semiconductor elements 21, 22, 23, 24, 25, 26, 27, 28, positive terminal Pu, negative terminal Nu, and intermediate terminal Mu, the parallel-connected semiconductor elements 21, 22, 23, 24 and the parallel-connected semiconductor elements 25, 26, 27, 28 are connected in series between the positive terminal Pu and the negative terminal Nu. In addition, the intermediate terminal Mu is connected to the connection point where the positive terminal Pu and the negative terminal Nu are connected between the parallel-connected semiconductor elements 21, 22, 23, 24 and the parallel-connected semiconductor elements 25, 26, 27, 28.

[0089] As shown in Figure 2, one end of the bonding wire 61a is connected to the gate of transistor 211. The other end of the bonding wire 61a is connected to the output section 412 of the gate signal output terminal 41. By connecting the gate of transistor 211 and the gate signal output terminal 41, the gate signal input from the U-phase control device to the input section 411 of the gate signal output terminal 411 is output from the output section 412 of the gate signal output terminal 411 to the gate of transistor 211 via the bonding wire 61a.

[0090] One end of a bonding wire 62a is connected to the source (auxiliary source) of a current-sensing transistor (not shown) provided on transistor 211. The other end of the bonding wire 62a is connected to the input portion 422 of the current-sensing terminal 42. By connecting the source of the current-sensing transistor and the current-sensing terminal 42, the current flowing from the source of the current-sensing transistor is input to the U-phase control device.

[0091] One end of bonding wire 61b is connected to the gate of transistor 221. The other end of bonding wire 61b is connected to the output section 432 of gate signal output terminal 43. By connecting the gate of transistor 221 and gate signal output terminal 43, the gate signal input from the U-phase control device to the input section 431 of gate signal output terminal 43 is output from the output section 432 of gate signal output terminal 433 to the gate of transistor 221 via bonding wire 61b.

[0092] One end of a bonding wire 62b is connected to the source (auxiliary source) of a current-sensing transistor (not shown) provided on transistor 221. The other end of the bonding wire 62b is connected to the input portion 442 of the current-sensing terminal 44. By connecting the source of the current-sensing transistor and the current-sensing terminal 44, the current flowing from the source of the current-sensing transistor is input to the U-phase control device.

[0093] One end of bonding wire 61c is connected to the gate of transistor 231. The other end of bonding wire 61c is connected to the output section 452 of gate signal output terminal 45. By connecting the gate of transistor 231 and gate signal output terminal 45, the gate signal input from the U-phase control device to the input section 451 of gate signal output terminal 45 is output from the output section 452 of gate signal output terminal 45 to the gate of transistor 231 via bonding wire 61c.

[0094] One end of a bonding wire 62c is connected to the source (auxiliary source) of a current-sensing transistor (not shown) provided on transistor 231. The other end of the bonding wire 62c is connected to the input portion 462 of the current-sensing terminal 46. By connecting the source of the current-sensing transistor and the current-sensing terminal 46, the current flowing from the source of the current-sensing transistor is input to the U-phase control device.

[0095] One end of a bonding wire 61d is connected to the gate of transistor 241. The other end of the bonding wire 61d is connected to the output section 472 of the gate signal output terminal 47. By connecting the gate of transistor 241 and the gate signal output terminal 47, the gate signal input from the U-phase control device to the input section 471 of the gate signal output terminal 47 is output from the output section 472 of the gate signal output terminal 47 to the gate of transistor 241 via the bonding wire 61d.

[0096] One end of a bonding wire 62d is connected to the source (auxiliary source) of a current-sensing transistor (not shown) provided on transistor 241. The other end of the bonding wire 62d is connected to the input portion 482 of the current-sensing terminal 48. By connecting the source of the current-sensing transistor and the current-sensing terminal 48, the current flowing from the source of the current-sensing transistor is input to the U-phase control device.

[0097] One end of bonding wire 61e is connected to the gate of transistor 251. The other end of bonding wire 61e is connected to the output section 512 of gate signal output terminal 51. By connecting the gate of transistor 251 and gate signal output terminal 51, the gate signal input from the U-phase control device to the input section 511 of gate signal output terminal 51 is transmitted from the output section 512 of gate signal output terminal 51 through the bonding wire. 61 The output is sent to the gate of transistor 251 via e.

[0098] One end of a bonding wire 62e is connected to the source (auxiliary source) of a current-sensing transistor (not shown) provided on transistor 251. The other end of the bonding wire 62e is connected to the input section 522 of the current-sensing terminal 52. By connecting the source of the current-sensing transistor and the current-sensing terminal 52, the current flowing from the source of the current-sensing transistor is input to the U-phase control device.

[0099] One end of bonding wire 61f is connected to the gate of transistor 261. The other end of bonding wire 61f is connected to the output section 532 of gate signal output terminal 53. By connecting the gate of transistor 261 and gate signal output terminal 53, the gate signal input from the U-phase control device to the input section 531 of gate signal output terminal 53 is transmitted from the output section 532 of gate signal output terminal 53 through the bonding wire. 61 The output is sent to the gate of transistor 261 via f.

[0100] One end of a bonding wire 62f is connected to the source (auxiliary source) of a current-sensing transistor (not shown) provided on transistor 261. The other end of the bonding wire 62f is connected to the input section 542 of the current-sensing terminal 54. By connecting the source of the current-sensing transistor and the current-sensing terminal 54, the current flowing from the current-sensing transistor is input to the U-phase control device.

[0101] One end of bonding wire 61g is connected to the gate of transistor 271. The other end of bonding wire 61g is connected to the output section 552 of gate signal output terminal 55. By connecting the gate of transistor 271 and gate signal output terminal 55, the gate signal input from the U-phase control device to the input section 551 of gate signal output terminal 55 is transmitted from the output section 552 of gate signal output terminal 55 through the bonding wire. 61 The output is sent to the gate of transistor 271 via g.

[0102] One end of a bonding wire 62g is connected to the source (auxiliary source) of a current-sensing transistor (not shown) provided on transistor 271. The other end of the bonding wire 62g is connected to the input portion 562 of the current-sensing terminal 56. By connecting the source of the current-sensing transistor and the current-sensing terminal 56, the current flowing from the current-sensing transistor is input to the U-phase control device.

[0103] One end of bonding wire 61h is connected to the gate of transistor 281. The other end of bonding wire 61h is connected to the output section 572 of gate signal output terminal 57. By connecting the gate of transistor 281 and gate signal output terminal 57, the gate signal input from the U-phase control device to the input section 571 of gate signal output terminal 57 is transmitted from the output section 572 of gate signal output terminal 57 through the bonding wire. 61 The output is sent to the gate of transistor 281 via h.

[0104] One end of a bonding wire 62h is connected to the source (auxiliary source) of a current-sensing transistor (not shown) provided on transistor 281. The other end of the bonding wire 62h is connected to the input section 582 of the current-sensing terminal 58. By connecting the source of the current-sensing transistor and the current-sensing terminal 58, the current flowing from the current-sensing transistor is input to the U-phase control device.

[0105] The gate signal is a pulsed signal. The same gate signal is input to transistors 211, 221, 231, and 241, respectively. The potential difference between the low potential level and the high potential level of the gate signal output from gate signal output terminals 41, 43, 45, and 47 becomes the gate-source voltage applied to transistors 211, 221, 231, and 241. Therefore, when the potential level of the gate signal output from gate signal output terminals 41, 43, 45, and 47 is at the high potential level, transistors 211, 221, 231, and 241 are in the ON state (conducting state). On the other hand, when the potential level of the gate signal output from gate signal output terminals 41, 43, 45, and 47 is at the low potential level, transistors 211, 221, 231, and 241 are in the OFF state (non-conducting state).

[0106] The same gate signal is input to transistors 251, 261, 271, and 281, respectively. The potential difference between the low potential level and the high potential level of the gate signal output from gate signal output terminals 51, 53, 55, and 57 becomes the gate-source voltage applied to transistors 251, 261, 271, and 281. Therefore, when the potential level of the gate signal output from gate signal output terminals 51, 53, 55, and 57 is at the high potential level, transistors 251, 261, 271, and 281 are in the ON state (conducting state). On the other hand, when the potential level of the gate signal output from gate signal output terminals 51, 53, 55, and 57 is at the low potential level, transistors 251, 261, 271, and 281 are in the OFF state (non-conducting state).

[0107] The gate signals output from gate signal output terminals 41, 43, 45, and 47 are signals of opposite polarity to the gate signals output from gate signal output terminals 51, 53, 55, and 57. Therefore, the U-phase control device controls transistors 211, 221, 231, and 241 to be turned on / off at predetermined intervals, and transistors 251, 261, 271, and 281 to be turned on / off at the same intervals. As a result, the U-phase inverter unit 12u can convert the DC voltage applied between the positive terminal Pu and the negative terminal Nu into an AC voltage and output it to the load from the intermediate terminal Mu.

[0108] (Configuration and effects of structures provided in semiconductor modules) The configuration and effects of the structure 31u provided in the semiconductor module 1A according to this embodiment will be explained with reference to Figures 1 to 3, and with reference to Figures 5 and 6. Figure 5(a) is a view of the vicinity of the intermediate terminal 91 of a conventional semiconductor module 9 as a comparative example, viewed in a direction perpendicular to the fastening surface 911 of the intermediate terminal 91. Figure 5(b) is a schematic cross-sectional view of the semiconductor module 9 cut by the β-β line shown in Figure 5(a). In the upper part of Figure 6, the structure 31u is shown viewed in a direction perpendicular to the fastening surface 751 (not shown in Figure 6) of the intermediate terminal Mu, and in the lower part of Figure 6, the structure 31u is shown viewed in a direction parallel to the fastening surface 751 (not shown in Figure 6) of the intermediate terminal Mu (i.e., the direction in which the sealing portion 81u and the intermediate terminal Mu are aligned).

[0109] As shown in Figure 1, the structure 31u provided in the semiconductor module 1A is positioned between the sealing portion 81u and the fastening surface 751 of the intermediate terminal Mu. The structure 31u has gate signal output terminals 53, 55 and current detection terminals 52, 54, 56. As shown in Figure 3, the input portion 531 (at least one example) of the gate signal output terminal 53 and the output portion 541 of the current detection terminal 54 are higher than the surface 811 of the sealing portion 81u and the fastening surface 751 of the intermediate terminal Mu, when viewed with respect to the surface 114 of the case 11. The gate signal output terminal 55 and the current detection terminals 52, 56 have a similar configuration to the current detection terminal 54. Therefore, the input portion 551 (at least one example) of the gate signal output terminal 55 and the output portions 521, 561 of the current detection terminals 52, 56 are higher than the surface 811 of the sealing portion 81u and the fastening surface 751 of the intermediate terminal Mu, when viewed with respect to the surface 114 of the case 11. Therefore, when viewed from the sealing portion 81u side, the structure 31u is positioned such that the gate signal output terminals 53, 55 and the current detection terminals 52, 54, 56 shield the fastening surface 751 of the intermediate terminal Mu.

[0110] By the way, when casting resin materials such as epoxy resin into a casting area, unexpected air bubbles may occur. Casting, or sealing, resin materials is done under reduced pressure. underThis process is carried out in this manner. As a result, when casting resin material, splashes of resin material formed by the bursting of air bubbles can scatter so far that they reach the periphery of the case, starting from the point where the bubbles burst.

[0111] As shown in Figure 5(a), unlike the semiconductor module 1A according to this embodiment, the conventional semiconductor module 9 does not have a control terminal group 93, including a gate signal output terminal and a current detection terminal, arranged between the sealing portion 92 and the intermediate terminal 91. Therefore, in the semiconductor module 9, there is a gap between the sealing portion 92 and the intermediate terminal 91 that is approximately the same as the width of the fastening surface 911 of the intermediate terminal 91.

[0112] Therefore, if air bubbles AB that are formed, for example, when epoxy resin is being poured to form the sealing portion 92 burst and droplets DR are scattered, as shown in Figures 5(a) and 5(b), the droplets DR may pass through the gap between the sealing portion 92 and the intermediate terminal 91 and adhere to the fastening surface 911 of the intermediate terminal 91. . Seal The resin material used to form the stopper portion 92 is an insulator. Therefore, if droplet DR adheres to the fastening surface 911, the contact resistance between the fastening surface 911 and the cable fastened to the intermediate terminal 91 increases. Since a large current (for example, tens to hundreds of amperes) flows through the intermediate terminal 91 to supply power to the load that the semiconductor module 9 drives, the increased contact resistance caused by droplet DR can lead to problems such as overheating at the intermediate terminal 91 or the inability to supply the desired current to the load. Furthermore, droplet DR is, for example, several hundred micrometers in size and is difficult to see with the naked eye. Therefore, in the semiconductor module 9, even if droplet DR adheres to the fastening surface 911, there is a problem that the worker fastening the cable to the intermediate terminal 91 may not notice the droplet DR and fasten the cable to the intermediate terminal 91.

[0113] In contrast, the semiconductor module 1A includes a structure 31u having gate signal output terminals 53, 55 and current detection terminals 52, 54, 56 arranged to shield the fastening surface 751 of the intermediate terminal Mu. As shown in Figure 2, the gate signal output terminals 41 to 57 are arranged in multiple rows in the direction in which the sealing portion 81u and the intermediate terminal Mu are aligned, and each has a surface SF (see Figure 6) with a predetermined extent in the input sections 411 to 571 (a partial example) when viewed in the direction in which the sealing portion 81u and the intermediate terminal Mu are aligned. Similarly, the current detection terminals 42 to 58 are arranged in multiple rows in the direction in which the sealing portion 81u and the intermediate terminal Mu are aligned, and each has a surface SF (see Figure 6) with a predetermined extent in the output sections 421 to 581 when viewed in the direction in which the sealing portion 81u and the intermediate terminal Mu are aligned. Therefore, as shown in Figure 3, even if bubbles AB are generated when, for example, epoxy resin is poured into the casting area 113u to form the sealing portion 81u, and the generated bubbles AB burst and droplets DR are scattered toward the intermediate terminal Mu, the droplets DR will adhere to at least one of the surfaces SF of the gate signal output terminals 53, 55 and the current detection terminals 52, 54, 56.

[0114] Furthermore, when viewed in the direction in which the sealing portion 81u and the intermediate terminal Mu are aligned, adjacent gate signal output terminals 41 to 57 are arranged without overlapping each other. Similarly, when viewed in the direction in which the sealing portion 81u and the intermediate terminal Mu are aligned, adjacent current detection terminals 42 to 58 are arranged without overlapping each other. That is, as shown in Figure 6, the distance DI between current detection terminal 54 and current detection terminal 56 is, for example, 0.5 mm or less. Also, the distance DI between current detection terminal 52 and gate signal output terminal 53, the distance DI between gate signal output terminal 53 and current detection terminal 54, and the distance DI between current detection terminal 56 and gate signal output terminal 55 are, for example, 0.5 mm or less. In addition, although not shown in the figure, the distances between adjacent gate signal output terminals other than gate signal output terminals 53, 55 and current detection terminals 52, 54, 56, the distances between adjacent current detection terminals, and the distances between adjacent gate signal output terminals and current detection terminals are also, for example, 0.5 mm or less.

[0115] There are no conductive materials, such as terminals with a higher workload than the gate signal output terminals 53, 55 and current detection terminals 52, 54, 56, between the gate signal output terminals 53, 55 and current detection terminals 52, 54, 56 and the intermediate terminal Mu. Furthermore, droplets DR have the characteristic of being attracted to conductive materials. For this reason, even if the gate signal output terminals 53, 55 and current detection terminals 52, 54, 56 are spaced apart DI from adjacent terminals when viewed in the direction in which the sealing portion 81u and the intermediate terminal Mu are aligned (i.e., the direction in which droplets DR are directed toward the intermediate terminal Mu), droplets DR will be attracted to the gate signal output terminals 53, 55 and current detection terminals 52, 54, 56 and adhere to one of the surfaces SF.

[0116] Thus, in the semiconductor module 1A, the structure 31u can prevent droplet DR from reaching the fastening surface 751 of the intermediate terminal Mu. As a result, the semiconductor module 1A can prevent an increase in contact resistance between the fastening surface 751 of the intermediate terminal Mu and the cable, thereby preventing heat generation at the intermediate terminal Mu and allowing the desired current to flow from the U-phase inverter section 12u to the load. Furthermore, since the semiconductor module 1A prevents droplet DR from adhering to the fastening surface 751 of the intermediate terminal Mu, the problem of workers fastening cables to the intermediate terminal Mu without noticing the droplet DR does not occur.

[0117] The semiconductor module 1A, like the U-phase inverter section 12u, has a structure 31v in the V-phase inverter section 12v that has the same configuration as structure 31u, and the W-phase inverter section 12w has a structure that has the same configuration as structure 31u. 31w This is provided so that the semiconductor module 1A can prevent droplet DR from adhering to the intermediate terminals Mv and Mw, thereby preventing heat generation at the intermediate terminals Mv and Mw, and allowing the desired current to be supplied to the load from the V-phase inverter section 12v and the W-phase inverter section 12w, respectively. Furthermore, with the semiconductor module 1A, the problem of workers connecting cables to the intermediate terminal Mu unknowingly connecting cables to the intermediate terminals Mv and Mw without noticing droplet DR does not occur.

[0118] The gate signal output terminals 41-57 and current detection terminals 42-58 have a current smaller than the current flowing through the intermediate terminal Mu, and a voltage lower than the voltage applied to the intermediate terminal Mu. Therefore, even if droplets DR adhere to the gate signal output terminals 41-57 and current detection terminals 42-58, they do not generate heat or produce the desired gate signal. The number No problems such as transmission failure to transistors 211-281 will occur.

[0119] Each structure 31u, 31v, and 31w only needs to have at least one of the gate signal output terminals 41 to 57 positioned between the sealing portions 81u, 81v, and 81w and the intermediate terminals Mu, Mv, and Mw, so as to shield the fastening surfaces 751 of the intermediate terminals Mu, Mv, and Mw from the sealing portions 81u, 81v, and 81w. Therefore, each structure 31u, 31v, and 31w only needs to have terminals positioned between the sealing portions 81u, 81v, and 81w and the intermediate terminals Mu, Mv, and Mw, depending on the arrangement of the gate signal output terminals 41 to 57. In addition, each structure 31u, 31v, and 31w may have terminals positioned between the sealing portions 81u, 81v, and 81w and the intermediate terminals Mu, Mv, and Mw, as well as one or more terminals positioned on both sides of such terminals. Furthermore, the structures 31u, 31v, and 31w may have terminals among the gate signal output terminals 41 to 57 that are located between the sealing portions 81u, 81v, and 81w and the intermediate terminals Mu, Mv, and Mw, as well as the remaining terminals.

[0120] (modified version) A modified semiconductor module according to this embodiment will be described with reference to Figure 7. This modified semiconductor module is characterized in that the structure of the gate signal output terminals and current detection terminals differs from the structure of the gate signal output terminals 41-57 and current detection terminals 42-58 in the first embodiment. Except for the difference in the structure of the gate signal output terminals and current detection terminals, this modified semiconductor module has the same configuration as the semiconductor module 1A of the first embodiment. For this reason, the components of this modified semiconductor module other than the gate signal output terminals and current detection terminals will be described using the same reference numerals as the components of the semiconductor module 1A of the first embodiment.

[0121] Figure 7 is a schematic diagram showing an enlarged view of the vicinity of the structure 31u provided in the semiconductor module according to this modification. The upper part of Figure 7 shows the structure 31u as viewed in a direction perpendicular to the fastening surface 751 (not shown in Figure 7) of the intermediate terminal Mu, and the lower part of Figure 7 shows the structure 31u as viewed in a direction parallel to the fastening surface 751 (not shown in Figure 7) of the intermediate terminal Mu (i.e., the direction in which the sealing portion 81u and the intermediate terminal Mu are aligned).

[0122] In this modified example, the gate signal output terminals 41-57 and current detection terminals 42-58 are press-fit terminals. Therefore, as shown in Figure 7, each of the gate signal output terminals 41-57 and current detection terminals 42-58 (only gate signal output terminals 53, 55 and current detection terminals 52, 54, 56 are shown in Figure 7) has a through-hole TH that penetrates the input section (a partial example) in the direction in which the sealing portion 81u (not shown in Figure 7) and the intermediate terminal Mu are aligned.

[0123] The gate signal output terminals 41-57 and current detection terminals 42-58 maintain contact with the circuit board through the side wall. , On the surface SF of the signal output terminals 41-57 and current detection terminals 42-58 Sealing resin of sealing portion 81u Even if droplets adhere, the gate signal No.The problem of being unable to output to transistors 211-281 does not occur. Therefore, the semiconductor module according to this modification can obtain the same effects as the semiconductor module 1A according to the first embodiment.

[0124] As described above, the semiconductor module 1A according to this embodiment includes sealing portions 81u, 81v, and 81w that encapsulate transistors 211 to 281, intermediate terminals Mu, Mv, and Mw connected to transistors 211 to 281 having a fastening surface 751 on which cables connected to the load to be driven are fastened in a direction intersecting the thickness direction of the sealing portions 81u, 81v, and 81w, and structures 31u, 31v, and 31w arranged between the sealing portions 81u, 81v, and 81w and the fastening surface 751, with input portions 411 to 471 and 511 to 571 that are higher than the surface 811 and fastening surface 751 of the sealing portions 81u, 81v, and 81w. Furthermore, the structures 31u, 31v, and 31w have output portions 421 to 581 that are higher than the surface 811 and fastening surface 751 of the sealing portions 81u, 81v, and 81w.

[0125] This prevents epoxy resin from adhering to terminals to which at least one of high current and high voltage is supplied in the semiconductor module 1A.

[0126] [Second Embodiment] A semiconductor module according to a second embodiment of the present invention will be described with reference to Figures 8 and 9. Regarding the components of the semiconductor module according to this embodiment, components that perform the same actions and functions as those of the semiconductor module 1A according to the first embodiment are denoted by the same reference numerals, and their descriptions are omitted.

[0127] As shown in Figure 8, the semiconductor module 1B according to this embodiment includes sealing portions 81u, 81v, and 81w that encapsulate transistors 211 to 281 (an example of multiple switching elements). The semiconductor module 1B also has a fastening surface 751 on which a cable (not shown) connected to a load (not shown) to be driven is fastened, in a direction intersecting the thickness direction of the sealing portions 81u, 81v, and 81w, and includes intermediate terminals Mu, Mv, and Mw connected to transistors 211 to 281.

[0128] The semiconductor module 1B is formed of epoxy resin and is positioned between the sealing portion 81u and the fastening surface 751 of the intermediate terminal Mu, with at least a portion of the structure 32u being higher than the surface 811 (see Figure 9) of the sealing portion 81u and the fastening surface 751. Furthermore, the semiconductor module 1B is formed of epoxy resin and is positioned between the sealing portion 81v and the fastening surface 751 of the intermediate terminal Mv, with at least a portion of the structure 32v being higher than the surface 81v and the fastening surface 751. In addition, the semiconductor module 1B is formed of epoxy resin and has a sealing portion 81w and intermediate terminals Mw Displaced between the fastening surfaces 751 and at least a portion of the sealing part 81w Structures higher than the surface and fastening surface 751 32w It is equipped with.

[0129] In this embodiment, the structure 32u has a specific portion 112au which is part of the case 11. The specific portion 112au is, for example, in a plan view, the portion of the area 112a of the partition portion 112 that constitutes the case 11 that is located between the sealing portion 81u and the fastening surface 751 of the intermediate terminal Mu. The specific portion 112au has the same height as, for example, the fixing portion 115u.

[0130] As shown in Figure 9, the specific portion 112au has a height that is higher than the surface 811 of the sealing portion 81u and the fastening surface 751 of the intermediate terminal Mu, with respect to the surface 114 of the case 11. Therefore, the structure 32u having the specific portion 112au has a height that is higher than the surface 811 of the sealing portion 81u and the fastening surface 751 of the intermediate terminal Mu.

[0131] The structure 32v has a specific part 112av which is part of the case 11. The specific part 112av is, for example, in a plan view, the portion of the area 112a of the partition 112 that constitutes the case 11 that is located between the sealing portion 81v and the fastening surface 751 of the intermediate terminal Mv. The specific part 112av has the same height as, for example, the fixing portion 115v.

[0132] Although not shown in the diagram, the specific portion 112av has a height that is higher than the surface of the sealing portion 81v and the fastening surface 751 of the intermediate terminal Mv, with respect to the surface 114 of the case 11 (see Figure 9). Therefore, the structure 32v having the specific portion 112av has a height that is higher than the surface of the sealing portion 81v and the fastening surface 751 of the intermediate terminal Mv.

[0133] The structure 32w has a specific part 112aw which is part of the case 11. The specific part 112aw is, for example, in a plan view, the portion of the area 112a of the partition 112 that constitutes the case 11 that is located between the sealing portion 81w and the fastening surface 751 of the intermediate terminal Mw. The specific part 112aw has the same height as, for example, the fixing portion 115w.

[0134] Although not shown in the illustration, the specific portion 112aw has a height higher than the surface of the sealing portion 81w and the fastening surface 751 of the intermediate terminal Mw, with respect to the surface 114 of the case 11 (see Figure 9). Therefore, the structure 32w having the specific portion 112aw has a height higher than the surface of the sealing portion 81w and the fastening surface 751 of the intermediate terminal Mw.

[0135] Thus, the semiconductor module 1B includes a structure 32u having a specific portion 112au that is higher than the surface 811 of the sealing portion 81u and the fastening surface 751 of the intermediate terminal Mu, and is positioned to shield the fastening surface 751 of the intermediate terminal Mu. For this reason, as shown in Figure 9, even if bubbles AB are generated when, for example, epoxy resin is poured into the casting area 113u to form the sealing portion 81u, and the generated bubbles AB burst and droplets DR are scattered toward the intermediate terminal Mu, the droplets DR will adhere to the specific portion 112au. As a result, the structure 32u can prevent the droplets DR from adhering to the fastening surface 751 of the intermediate terminal Mu.

[0136] Although not shown in the diagram, structures 32v and 32w can similarly have droplets adhere to specific parts 112av and 112aw. This prevents droplets DR from adhering to the respective fastening surfaces 751 of the intermediate terminals Mv and Mw.

[0137] Therefore, the semiconductor module 1B can obtain the same effects as the semiconductor module 1A according to the first embodiment described above.

[0138] In this embodiment, the region 112a of the partition 112 is formed such that the portions corresponding to the specific portions 112au, 112av, and 112aw are higher than the remaining portions. However, the entire region 112a may be formed at the same height as the specific portions 112au, 112av, and 112aw.

[0139] As shown in Figure 9, the region 112b of the partition 112 provided in the semiconductor module 1B has a height higher than the surface 811 of the sealing portion 81u, the fastening surfaces of the positive electrode terminal Pu and the negative electrode terminal Nu, with respect to the surface 114 of the case 11. Therefore, even if droplets DR caused by air bubbles AB generated when casting into the casting region 113u are scattered toward the positive electrode terminal Pu and the negative electrode terminal Nu, the droplets DR will adhere to region 112b. As a result, the semiconductor module 1B can prevent droplets DR from adhering to the fastening surfaces of the positive electrode terminal Pu and the negative electrode terminal Nu.

[0140] Although not shown in the diagram, the region 112b of the partition 112 provided in the semiconductor module 1B is, with reference to the surface 114 of the case 11, the surface of the sealing portions 81v and 81w, and the positive terminals for the V phase and W phase, respectively. Pv, Pw and negative terminal Nv,Nw Each of these has a height higher than the fastening surface. Therefore, the casting area 113V, 113W During the casting process, air bubbles AB caused splashes DR to the positive terminals of the V-phase and W-phase. Pv, Pw and negative terminal Nv,Nw Even if the droplets DR are scattered towards the area, they adhere to region 112b. As a result, the semiconductor module 1B does not allow the droplets DR to adhere to the positive terminals of the V-phase and W-phase. Pv, Pw and negative terminal Nv,Nw This prevents adhesion to each of the fastening surfaces.

[0141] [Third Embodiment] A semiconductor module according to a third embodiment of the present invention will be described with reference to Figure 10. Regarding the components of the semiconductor module according to this embodiment, components that perform the same actions and functions as those of the semiconductor module 1A according to the first embodiment are denoted by the same reference numerals, and their descriptions are omitted. The semiconductor module 1C according to this embodiment has the same configuration as the semiconductor module 1A according to the first embodiment, except that the height of the region 112a of the partition portion 112 constituting the case 11 is different. Therefore, the planar configuration of the semiconductor module 1C will be described with reference to Figure 1 as necessary.

[0142] The semiconductor module 1C according to this embodiment includes sealing parts 81u, 81v, and 81w formed of epoxy resin that encapsulate transistors 211 to 281 (an example of multiple switching elements) (see Figure 1). 1C It has a fastening surface 751 to which a cable (not shown) connected to the load (not shown) to be driven is fastened, in a direction intersecting the thickness direction of the sealing portions 81u, 81v, and 81w, and is equipped with intermediate terminals Mu, Mv, and Mw connected to transistors 211 to 281 (see Figure 1).

[0143] As shown in Figure 10, the semiconductor module 1C includes a structure 33u positioned between the sealing portion 81u and the fastening surface 751 of the intermediate terminal Mu, with at least a portion of it being higher than the surface 811 of the sealing portion 81u and the fastening surface 751. 1C This is a structure positioned between the sealing portion 81v and the fastening surface 751 of the intermediate terminal Mv, with at least a portion of it being higher than the surface (not shown) of the sealing portion 81v and the fastening surface 751. (Not illustrated) It is equipped with the following. The structure is located at the position corresponding to the structure 31v shown in Figure 1. Furthermore, semiconductor module 1C is the sealing part 81w and intermediate terminals Mw Displaced between the fastening surfaces 751 and at least a portion of the sealing part 81w Structures higher than the surface (not shown) and fastening surface 751 (Not illustrated) It is equipped with the following. The structure is located at a position corresponding to the structure 31w shown in Figure 1.

[0144] In this embodiment, the structure 33u comprises part of the gate signal output terminals 41-57 and current detection terminals 42-58, and the area 112a of the partition portion 112 that constitutes the case 11. of The structure 33u has, for example, gate signal output terminals 41-57 and current detection terminals 42-58 provided on semiconductor module 1C, and the same arrangement as, for example, the gate signal output terminals 41-57 and current detection terminals 42-58 provided on semiconductor module 1A. Therefore, the structure 33u has, for example, gate signal output terminals 53, 55 and current detection terminals 52, 54, 56.

[0145] As shown in Figure 10, the region 112a of the partition 112 has a height higher than the surface 811 of the sealing portion 81u and the fastening surface 751 of the intermediate terminal Mu, with respect to the surface 114 of the case 11. Similarly, the gate signal output terminals 53, 55 and the current detection terminals 52, 54, 56 (only the gate signal output terminal 53 and the current detection terminal 54 are shown in Figure 10) have a height higher than the surface 811 of the sealing portion 81u and the fastening surface 751 of the intermediate terminal Mu.

[0146] Thus, the semiconductor module 1C includes a structure 33u that has a height higher than the surface 811 of the sealing portion 81u and the fastening surface 751 of the intermediate terminal Mu, and is positioned to shield the fastening surface 751 of the intermediate terminal Mu from the gate signal output terminals 53, 55 and current detection terminals 52, 54, 56, as well as a partition area 112a. For this reason, as shown in Figure 10, even if bubbles AB are generated when, for example, epoxy resin is poured into the casting area 113u to form the sealing portion 81u, and the generated bubbles AB burst and droplets DR are scattered toward the intermediate terminal Mu, the droplets DR will adhere to either the gate signal output terminals 53, 55, the current detection terminals 52, 54, 56, or the area 112a. As a result, the structure 33u can prevent the droplets DR from adhering to the fastening surface 751 of the intermediate terminal Mu.

[0147] Although not shown in the diagram, the V-phase structure and the W-phase structure have the same configuration as structure 33u, so that droplets can adhere to any of the gate signal output terminals 53, 55, current detection terminals 52, 54, 56, and region 112a. This prevents droplets from adhering to the fastening surfaces 751 of the intermediate terminals Mv and Mw, respectively, of the V-phase structure and the W-phase structure.

[0148] Therefore, the semiconductor module 1C can obtain the same effects as the semiconductor module 1A according to the first embodiment described above.

[0149] As shown in Figure 10, the region 112b of the partition portion 112 provided in the semiconductor module 1C has a height higher than the surface 811 of the sealing portion 81u, the fastening surfaces of the positive terminal Pu and the negative terminal Nu, with respect to the surface 114 of the case 11. Although not shown, the partition portion 112 Region 112b It has a height that is higher than the surface of the sealing parts 81v, 81w, the fastening surfaces of the positive terminals Pv, Pw and negative terminals Nv, Nw, with respect to the surface 114 of the case 11.

[0150] Therefore, even if droplets caused by air bubbles generated during casting into the casting regions 113u, 113v, and 113w are scattered toward the positive terminals Pu, Pv, Pw and the negative terminals Nu, Nv, Nw, these droplets will adhere to region 112b. As a result, the semiconductor module 1C can prevent droplets from adhering to the fastening surfaces of the positive terminals Pu, Pv, Pw and the negative terminals Nu, Nv, Nw.

[0151] The present invention is not limited to the embodiments described above, and various modifications are possible. In the first to third embodiments described above, the transistor provided in the semiconductor element is composed of a MOSFET, but it may also be composed of an insulated gate bipolar transistor (IGBT).

[0152] The semiconductor modules according to the first to third embodiments described above include a structure having at least one of a gate signal output terminal, a current detection terminal, and a part of the case, but the present invention is not limited thereto. The structure may have components other than a gate signal output terminal, a current detection terminal, and a case, as long as it is positioned between the sealing portion and the intermediate terminal.

[0153] In the first to third embodiments described above, the gate signal output terminals and current detection terminals are arranged in two rows, but they may be arranged in one row or in three or more rows.

[0154] In the first embodiment described above, the region 112b of the partition 112 constituting the case 11 has approximately the same height as the respective fastening surfaces of the positive terminals Pu, Pv, Pw and the negative terminals Nu, Nv, Nw, but the present invention is not limited thereto. The region 112b in the first embodiment may have a height higher than the respective fastening surfaces of the positive terminals Pu, Pv, Pw and the negative terminals Nu, Nv, Nw. As a result, the semiconductor module 1A according to the first embodiment can prevent splashes from adhering to the respective fastening surfaces of the positive terminals Pu, Pv, Pw and the negative terminals Nu, Nv, Nw.

[0155] The technical scope of the present invention is not limited to the illustrative and described embodiments, but also includes all embodiments that produce effects equivalent to those aimed at by the present invention. Furthermore, the technical scope of the present invention is not limited to the combination of features of the invention defined by the claims, but can be defined by any desired combination of specific features from all disclosed features. [Explanation of Symbols]

[0156] 1A, 1B, 1C, 9 Semiconductor Modules 11 cases 12u U-phase inverter section 12V V-phase inverter section 12W W-phase inverter section 14 DBC board 21-28 Semiconductor elements 31u,31v,31w,32u,32v,32w,33u structure 41, 43, 45, 47, 51, 53, 55, 57 Gate signal output terminals 42, 44, 46, 48, 52, 54, 56, 58 Current detection terminals 61a~61h, 62a~62h, 63a~63d, 64a~64d, 65a~65d, 66a~66d Bonding wires 71u,73u,75u Fastening part 72u,76u,115u,115v,115w fixed part 81u,81v,81w,92 Sealing part 83 Adhesives 85 Handa 91, Mu, Mv, Mw Intermediate terminal 93 Control terminal group 111 Peripheral area 112 Partition 112a,112b,112c,112d area 112au,112av,112aw specific part 113u,113v,113w Casting area 114,811,SF surface 121 Inverter rotation road 1 40 Insulating substrate 141 Positive side wiring pattern 141a Part 1 141b Second part 142,143 Intermediate wiring pattern 142b Second part 144 Negative side wiring pattern 145 Heat transfer patterns 211, 221, 231, 241, 251, 261, 271, 281 transistors 212, 222, 232, 242, 252, 262, 272, 282 freewheeling diodes 411,422,431,442,451,462,471,482,511,522,531,542,551,562,571,582 Input section 412, 421, 432, 441, 452, 461, 472, 481, 512, 521, 532, 541, 552, 561, 572, 581 Output section 751,911 fastening surfaces Anode AB bubbles DI interval DR droplets Nu,Nv,Nw Negative terminal Pu,Pv,Pw Positive terminal TH through hole Ulo, Vlo, Wlo lower arm Uup, Vup, Wup Upper Arm

Claims

1. A sealing portion formed of epoxy resin that encloses multiple switching elements, The intermediate terminal connected to the plurality of switching elements has a fastening surface on which a cable connected to the load to be driven is fastened in a direction intersecting the thickness direction of the sealing portion, Cases in which the casting area in which the sealing portion is cast is defined, A structure disposed between the sealing portion and the fastening surface, at least a portion of which is higher than the surface of the sealing portion and the fastening surface, Equipped with, The intermediate terminal has the fastening surface at a position higher than the surface of the sealing portion, The aforementioned structure is When viewed from the side in the direction in which the sealing portion and the intermediate terminal are aligned, a part of the case includes a portion that extends above the fastening surface and overlaps with the fastening surface, A plurality of control terminals are provided on the upper surface of a part of the case between the sealing portion and the fastening surface, each having a surface with a predetermined extent in the part of the structure such that it shields the entire width of the intermediate terminal when viewed in the direction in which the sealing portion and the intermediate terminal are aligned, and are arranged in a row in a plan view. It has, In a plan view, it is positioned between the sealing portion and the fastening surface, shielding the fastening surface. Semiconductor module.

2. The plurality of control terminals are arranged in multiple rows along a direction intersecting the direction in which the sealing portion and the intermediate terminals are aligned. The semiconductor module according to claim 1.

3. When viewed in the direction in which the sealing portion and the intermediate terminals are aligned, adjacent control terminals are arranged so as not to overlap each other. The semiconductor module according to claim 2.

4. Each of the aforementioned control terminals has a through hole that penetrates a portion of the sealing portion and the intermediate terminal in the direction in which they are aligned. The semiconductor module according to claim 2 or 3.

5. The plurality of control terminals are configured such that a current smaller than the current flowing through the intermediate terminal flows through them, and a voltage lower than the voltage applied to the intermediate terminal is applied to them. A semiconductor module according to any one of claims 2 to 4.

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