Method for manufacturing a semiconductor device, light-absorbing laminate, and temporary fixing laminate

Abstract

To provide a method for manufacturing a semiconductor device including a step of processing a semiconductor member temporarily fixed to a support member, which can easily separate the processed semiconductor member from the support member by a simple process.SOLUTION: A method for manufacturing the semiconductor device includes a step of processing the semiconductor member temporarily fixed to a support member via a temporary fixing material layer, and a step of irradiating a temporary fixing laminate with incoherent light from a support member side, and thereby separating the semiconductor member from the support member, in this order. A part or the whole of the temporary fixing material layer is a light absorbing layer which absorbs light to generate heat. The transmittance of the support member to the incoherent light is 90% or more. The transmittance of the temporary fixing material layer to incoherent light is 3.1% or less.SELECTED DRAWING: Figure 4

Description

Technical Field

[0001] The present invention relates to a method for manufacturing a semiconductor device, a light absorption laminate, and a temporary fixing laminate.

Background Art

[0002] In the manufacture of semiconductor elements, after incorporating an integrated circuit into a semiconductor member such as a semiconductor wafer, the semiconductor member may be processed. The semiconductor member is subjected to processing such as, for example, back grinding or dicing. The semiconductor member is usually processed while being temporarily fixed to a support member, and then the semiconductor member is separated from the support member. For example, Patent Document 1 discloses a method of separating a semiconductor member from a support member by temporarily fixing the semiconductor member to the support member via a temporary fixing material layer and physically separating the semiconductor member from the support member while heating after the processing. Patent Documents 2 and 3 disclose methods of separating a semiconductor member from a support member by irradiating a laser to the temporary fixing material layer.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Patent Document 3

Summary of the Invention

Problems to be Solved by the Invention

[0004] [[ID=​​​​ A method for manufacturing a semiconductor device according to one aspect of the present invention is: A step of preparing a temporary fixing laminate comprising a support member and a temporary fixing material layer provided on the support member, wherein the temporary fixing material layer has a curable resin layer including at least one outermost surface of the temporary fixing material layer, A semiconductor member having a semiconductor substrate and a redistribution layer provided on one side of the semiconductor substrate is temporarily fixed to the support member via the temporary fixing material layer, with the redistribution layer facing the curable resin layer. A step of processing the semiconductor member that has been temporarily fixed to the support member, The process involves irradiating the temporary fixing laminate with incoherent light from the support member side, thereby separating the semiconductor member from the support member, It is equipped with these in this order. The temporary fixing layer has a light-absorbing layer that absorbs light and generates heat. The light-absorbing layer is provided as part of the curable resin layer or as a separate layer from the curable resin layer. The transmittance of the support member to the incoherent light is 90% or more. The transmittance of the temporary fixing layer to the incoherent light is 3.1% or less.

[0006] According to the above method, the processed semiconductor component can be easily separated from the support member by a simple process of irradiation with incoherent light. Irradiation with incoherent light is easier to perform because it is easier to secure a large irradiation area compared to irradiation with a laser, which is coherent light. By including a combination of a support member having a specific transmittance and a light-absorbing layer in the temporary fixing material layer, the semiconductor component can be easily separated from the support member even with irradiation with incoherent light. [Effects of the Invention]

[0007] The present invention provides a method for manufacturing a semiconductor device, which includes a step of processing a semiconductor device temporarily fixed to a support member, and provides a method for easily separating the processed semiconductor device from the support member by a simple process. The method of the present invention allows for easy separation of the processed semiconductor device from the support member even with incoherent light of relatively low energy. By using incoherent light of low energy, damage to fine structures such as the redistribution layer of the semiconductor device can be suppressed. [Brief explanation of the drawing]

[0008] [Figure 1] (a), (b), and (c) are schematic diagrams illustrating one embodiment of a method for manufacturing a semiconductor device. [Figure 2] This is a schematic diagram showing one embodiment of a light-absorbing laminate. [Figure 3] (a) and (b) are schematic diagrams illustrating one embodiment of a method for manufacturing a semiconductor device. [Figure 4] (a) and (b) are schematic diagrams illustrating one embodiment of a method for manufacturing a semiconductor device. [Figure 5] (a), (b), and (c) are schematic diagrams illustrating one embodiment of a method for manufacturing a semiconductor device. [Modes for carrying out the invention]

[0009] Several embodiments of the present invention will be described in detail below. However, the present invention is not limited to the following embodiments.

[0010] The sizes of the components in the figures referenced herein are conceptual, and the relative sizes of the components are not limited to those shown in the figures. Repetitive explanations may be omitted.

[0011] The numerical values and ranges thereof in this specification do not limit the scope of the present invention. The numerical range indicated by "~" in this specification indicates a range including the numerical values described before and after "~" as the minimum value and the maximum value, respectively. In the numerical ranges described stepwise in this specification, the upper limit value or the lower limit value described in one numerical range may be replaced with the upper limit value or the lower limit value of the numerical range described in other stepwise descriptions. In the numerical ranges described in this specification, the upper limit value or the lower limit value of the numerical range may be replaced with the value shown in the examples.

[0012] In this specification, (meth)acrylic acid means acrylic acid or its corresponding methacrylic acid. The same applies to other similar expressions such as (meth)acrylate and (meth)acryloyl group.

[0013] In order to manufacture a semiconductor device, during the processing of a semiconductor member, a temporary fixing laminate for temporarily fixing the semiconductor member to a support member is prepared. FIG. 1 is a cross-sectional view showing some embodiments of the temporary fixing laminate. The temporary fixing laminate 1 shown in FIG. 1 has a support member 10 and a temporary fixing material layer 30 provided on the support member 10. The temporary fixing material layer 30 has a curable resin layer �1. The curable resin layer 31 includes the outermost surface S on the side opposite to the support member 10 of the temporary fixing material layer 30. In addition, the temporary fixing material layer 30 has a light absorption layer 32 provided as a separate layer from the curable resin layer 31, or a light absorption layer 31B provided as a part of the curable resin layer 31. The light absorption layers 32 and 31B are layers that absorb light and generate heat.

[0014] The temporary fixing material layer 30 of the temporary fixing laminate 1 shown in FIG. 1(a) has a curable resin layer 31 including the outermost surface S on the side opposite to the support member 10 and a light absorption layer 32 provided as a separate layer from the curable resin layer 31. In other words, the light absorption layer 32 and the curable resin layer 31 are laminated in this order on the support member 10.

[0015] The temporary fixing material layer 30 of the temporary fixing laminate 1 shown in FIG. 1(b) is composed of a curable resin layer 31 that includes a light absorption layer 31B as a part thereof. The curable resin layer 31 here has a light absorption layer 31B including the outermost surface S and a substantially non-heat-generating curable resin layer 31A provided on the support member 10 side of the light absorption layer 31B.

[0016] In the case of the temporary fixing material layer 30 of the temporary fixing laminate 1 shown in FIG. 1(c), in addition to the light absorption layer 31B similar to that in FIG. 1(b), a light absorption layer 32 is further provided as a layer separate from the curable resin layer 31. Instead of the light absorption layer 32 provided as a layer separate from the curable resin layer 31, a light absorption layer constituting a part of the curable resin layer 31 may be further provided between the curable resin layer 31A and the support member 10.

[0017] The temporary fixing laminate 1 can be obtained, for example, by sequentially forming each layer on the support member 10. A laminated film having a curable resin layer and a light absorption layer may be prepared and laminated on the support member 10. A light absorption laminate illustrated in FIG. 2 may be prepared and used to obtain the temporary fixing laminate 1. The light absorption laminate 3 shown in FIG. 2 has a support member 10 and a light absorption layer 32 provided on the support member 10. The light absorption layer 32 may be a metal layer adjacent to the support member 10. The transmittance of the metal layer as the light absorption layer 32 with respect to the incoherent light irradiated from the xenon lamp may be 3.1% or less, 3.0% or less, 2.5% or less, or

[0018] 1.5% or less, and may also be 0% or more. The temporary fixing laminate 1 in FIG. 1 can also be regarded as a laminate composed of a light absorption laminate and a curable resin layer. For example, the temporary fixing laminate 1 in FIG. 1 can be manufactured by a method including a step of forming a curable resin layer 32 on the light absorption layer 32 of the light absorption laminate 3.

[0018] Figures 3, 4, and 5 are process diagrams illustrating one embodiment of a method for manufacturing a semiconductor device using a temporary fixing laminate. Here, the method using the temporary fixing laminate 1 shown in Figure 1(a) is illustrated, but semiconductor devices can be manufactured similarly using temporary fixing laminates of other configurations. The method shown in Figures 3 to 5 comprises, in this order, the steps of: temporarily fixing the semiconductor member 45 to the support member 10 via a temporary fixing material layer 30 (Figure 3); processing the semiconductor member 45 that has been temporarily fixed to the support member 10 (Figure 4(a)); forming a sealing layer 50 to seal the processed semiconductor member 45 (Figure 4(b)); and irradiating the temporary fixing laminate 1 with incoherent light A from the support member 10 side, thereby separating the semiconductor member 45 from the support member 10 (Figure 4(b)). The semiconductor member 45 has a semiconductor substrate 40 and a redistribution layer 41 provided on one side of the semiconductor substrate 40. The semiconductor member 45 is placed on the curable resin layer 31 with the redistribution layer 41 facing the curable resin layer 31. The step of temporarily fixing the semiconductor member 45 to the support member 10 via the temporary fixing material layer 30 may include placing the semiconductor member 45 on the curable resin layer 31 with the redistribution layer 41 facing the curable resin layer 31, and curing the curable resin layer 31.

[0019] The support member 10 and temporary fixing material layer 30 constituting the temporary fixing laminate 1 have a specific transmittance to incoherent light irradiated onto the temporary fixing laminate 1. The transmittance of the support member 10 to incoherent light is 90% or more. The transmittance of the temporary fixing material layer 30 to incoherent light is 3.1% or less. Because the transmittance of the support member 10 is high and the transmittance of the temporary fixing material layer 30 is low, the semiconductor member 45 can be easily separated from the support member 10 even when irradiated with incoherent light of low energy. When the energy of the incoherent light is low, the redistribution layer 41 or other peripheral members of the semiconductor member 45 are less likely to be damaged by light irradiation. From a similar viewpoint, the transmittance of the support member 10 to incoherent light may be 60% or more, 70% or more, or 100% or less. The transmittance of the temporary fixing material layer 30 to incoherent light may be 3.0% or less, 2.5% or less, or 1.5% or less, or it may be 0% or more.

[0020] The support member 10 is a plate-like body with high transmittance that can withstand the loads applied during the processing of the semiconductor member 45. Examples of the support member 10 include an inorganic glass substrate and a transparent resin substrate.

[0021] The thickness of the support member 10 may be, for example, 0.1 to 2.0 mm. If the thickness of the support member 10 is 0.1 mm or more, handling tends to be easier. If the thickness of the support member 10 is 2.0 mm or less, material costs tend to be reduced.

[0022] The outermost surface S of the temporary fixing material layer 30 on the side to which the semiconductor member 45 is temporarily fixed is the surface of the curable resin layer 31. For example, by curing the curable resin layer 31 with the semiconductor member 45 placed on it, the semiconductor member 45 can be temporarily fixed to the support member 10. In other words, the semiconductor member 45 can be temporarily bonded to the support member 10 via the temporary fixing material layer 30 having the cured curable resin layer 31c.

[0023] The light-absorbing layer 32 is a layer that absorbs light and generates heat. By providing the light-absorbing layer 32, the temporary fixing material layer 30 can easily have a low transmittance.

[0024] The curable resin layer 31 is a layer containing a curable resin composition that hardens by heat or light. Before hardening, the curable resin layer 31 has sufficient adhesive properties to allow the semiconductor member 45 to be attached by pressing or other means. The hardened curable resin layer 31c holds the semiconductor member 45 while it is being processed. In this specification, all components other than the conductive particles constituting the curable resin layer 31 are considered to be components of the curable resin composition.

[0025] The thickness of the curable resin layer 31 may be, for example, 50 μm or less, 40 μm or less, or 30 μm or less with a thickness of 0.1 μm or more, or 50 μm or less, 40 μm or less, or 30 μm or less with a thickness of 1 μm or more, from the viewpoint of stress relaxation.

[0026] The storage modulus of the cured curable resin layer 31c at 25°C may be 5 to 100 MPa. If the storage modulus of the cured curable resin layer 31c at 25°C is 5 MPa or higher, the support member 10 is more likely to hold the semiconductor member 45 without bending. Also, when the semiconductor member 45 is separated from the support member, the curable resin layer 31c tends to leave less residue on the semiconductor member 45. If the storage modulus of the cured curable resin layer 31c at 25°C is 100 MPa or lower, the displacement of the semiconductor member 45 tends to be reduced. From a similar viewpoint, the storage modulus of the cured curable resin layer 31c at 25°C may be 5.5 MPa or more, 6 MPa or more, or 6.3 MPa or more and 100 MPa or less; 5.5 MPa or more, 6 MPa or more, or 6.3 MPa or more and 90 MPa or less; 5.5 MPa or more, 6 MPa or more, or 6.3 MPa or more and 80 MPa or less; 5.5 MPa or more, 6 MPa or more, or 6.3 MPa or more and 70 MPa or less; or 5.5 MPa or more, 6 MPa or more, or 6.3 MPa or more and 65 MPa or less. In this specification, the storage modulus of the cured curable resin layer 31c refers to the value obtained by viscoelastic measurement measured under the conditions of a heating rate of 5°C / min, a frequency of 1 Hz, and tensile mode.

[0027] The storage modulus of the cured curable resin layer 31c at 25°C can be increased, for example, by increasing the content of the hydrocarbon resin described later, by using a hydrocarbon resin with a high Tg, or by adding an insulating filler to the curable resin composition.

[0028] The storage modulus of the cured curable resin layer 31c at 250°C may be 0.70 MPa or more, 0.80 MPa or more, 0.85 MPa or more, or 0.90 MPa or more and 2.00 MPa or less, or 0.70 MPa or more, 0.80 MPa or more, 0.85 MPa or more, or 0.90 MPa or more and 2.00 MPa or less, or 0.70 MPa or more, 0.80 MPa or more, 0.85 MPa or more, or 0.90 MPa or more and 1.90 MPa or less, or 0.70 MPa or more, 0.80 MPa or more, 0.85 MPa or more, or 0.90 MPa or more and 1.80 MPa or less, or 0.70 MPa or more, 0.80 MPa or more, 0.85 MPa or more, or 0.90 MPa or more and 1.75 MPa or less.

[0029] The curable resin composition constituting the curable resin layer 31 may contain a thermosetting resin and a hydrocarbon resin. The hydrocarbon resin is a resin whose main skeleton is composed of hydrocarbons. When the curable resin composition contains a hydrocarbon resin, the semiconductor member 45 is easily attached to the curable resin layer 31 at low temperatures.

[0030] From the viewpoint of low-temperature adhesion of the curable resin layer 31, the glass transition temperature (Tg) of the hydrocarbon resin may be 50°C or lower. From the viewpoint of good peelability of the curable resin layer 31, the Tg of the hydrocarbon resin may be -100°C or higher, or -50°C or higher.

[0031] The Tg of hydrocarbon resins is the midpoint glass transition temperature value obtained by differential scanning calorimetry (DSC). Specifically, the Tg of hydrocarbon resins is the midpoint glass transition temperature calculated by measuring the change in heat quantity under conditions of a heating rate of 10°C / min and a measurement temperature of -80 to 80°C, using a method compliant with JIS K 7121.

[0032] The hydrocarbon resin includes, for example, at least one selected from the group consisting of ethylene-propylene copolymer, ethylene-1-butene copolymer, ethylene-propylene-1-butene copolymer elastomer, ethylene-1-hexene copolymer, ethylene-1-octene copolymer, ethylene-styrene copolymer, ethylene-norbornene copolymer, propylene-1-butene copolymer, ethylene-propylene-unconjugated diene copolymer, ethylene-1-butene-unconjugated diene copolymer, ethylene-propylene-1-butene-unconjugated diene copolymer, polyisoprene, polybutadiene, styrene-butadiene-styrene block copolymer (SBS), styrene-isoprene-styrene block copolymer (SIS), styrene-ethylene-butylene-styrene block copolymer (SEBS), styrene-ethylene-propylene-styrene block copolymer (SEPS), and hydrogenated versions thereof. These hydrocarbon resins may have carboxyl groups. Carboxyl groups are introduced, for example, by modification using maleic anhydride. The hydrocarbon resin may also contain a styrene-based resin that includes monomer units derived from styrene. The styrene-based resin may be a styrene-ethylene-butylene-styrene block copolymer (SEBS).

[0033] The weight-average molecular weight (Mw) of the hydrocarbon resin may be between 10,000 and 5,000,000 or between 100,000 and 2,000,000. A weight-average molecular weight of 10,000 or more tends to make it easier to ensure the heat resistance of the temporary fixing layer 30. A weight-average molecular weight of 5,000,000 or less tends to make it easier to suppress the decrease in flow and adhesion of the temporary fixing layer 30. The weight-average molecular weight here is the polystyrene equivalent value using a calibration curve with standard polystyrene by gel permeation chromatography (GPC).

[0034] The hydrocarbon resin content may be 40 parts by mass or more, 50 parts by mass or more, or 60 parts by mass or more and 90 parts by mass or less, or 40 parts by mass or more, 50 parts by mass or more, or 60 parts by mass or more and 85 parts by mass or less, or 40 parts by mass or more, 50 parts by mass or more, or 60 parts by mass or more and 80 parts by mass or less, based on 100 parts by mass of the total mass of the curable resin composition constituting the curable resin layer 31. When the hydrocarbon resin content is within these numerical ranges, it tends to be easier to form a thin and flat curable resin layer 31. In addition, the curable resin layer 31 tends to have good adhesion at low temperatures and an appropriate storage modulus after curing.

[0035] Thermosetting resins are components that cure curable resin compositions through a thermosetting reaction. The thermosetting reaction can be a reaction between the thermosetting resin and a curing agent, self-polymerization of the thermosetting resin, or a combination thereof. Examples of thermosetting resins include epoxy resins, acrylic resins, silicone resins, phenolic resins, thermosetting polyimide resins, polyurethane resins, melamine resins, and urea resins. These may be used individually or in combination of two or more. Thermosetting resins may also contain epoxy resins due to their superior heat resistance, workability, and reliability.

[0036] An epoxy resin is a compound having one or more epoxy groups. An epoxy resin may have two or more epoxy groups. Examples of epoxy resins having two or more epoxy groups include bisphenol A type epoxy resins, novolac type epoxy resins (such as phenol novolac type epoxy resins), glycidylamine type epoxy resins, heterocyclic epoxy resins, and alicyclic epoxy resins.

[0037] The curable resin composition may contain a thermosetting resin and its curing agent. The total content of the thermosetting resin and its curing agent may be 10 parts by mass or more, 15 parts by mass or more, or 20 parts by mass or more and 60 parts by mass or less, 10 parts by mass or more, 15 parts by mass or more, or 20 parts by mass or more and 50 parts by mass or less, or 10 parts by mass or more, 15 parts by mass or more, or 20 parts by mass or more and 40 parts by mass or less, based on 100 parts by mass of the total mass of the curable resin composition. When the total content of the thermosetting resin and its curing agent is within these ranges, there is a tendency for a thin, flat curable resin layer to be easily formed, and the heat resistance of the cured curable resin layer 31c tends to be better.

[0038] When epoxy resin is used as the thermosetting resin, the curable resin composition may contain a curing agent for the epoxy resin. The curing agent for the epoxy resin is not particularly limited, but examples include amines, polyamides, acid anhydrides, polysulfides, boron trifluoride, bisphenols (bisphenol A, bisphenol F, bisphenol S, etc.), and phenol resins (phenol novolac resins, bisphenol A novolac resins, cresol novolac resins, phenol aralkyl resins, etc.).

[0039] The thermosetting resin composition may further contain a curing accelerator that promotes the curing reaction of the thermosetting resin, such as an epoxy resin. Examples of curing accelerators include imidazole compounds, dicyandiamides, dicarboxylic acid dihydrazides, triphenylphosphines, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methylimidazole-tetraphenylborate, and 1,8-diazabicyclo[5,4,0]undecene-7-tetraphenylborate. These may be used individually or in combination of two or more.

[0040] The content of the curing accelerator may be 0.01 to 5 parts by mass per 100 parts by mass of the total amount of thermosetting resin and curing agent. When the content of the curing accelerator is within this range, the curability of the curable resin layer and the heat resistance after curing tend to be better.

[0041] The curable resin composition constituting the curable resin layer 31 may contain a polymerizable monomer having a polymerizable unsaturated group and a polymerization initiator. In this case as well, the curable resin composition may further contain the hydrocarbon resin described above.

[0042] Polymerizable monomers are compounds having polymerizable unsaturated groups such as ethylenically unsaturated groups. Polymerizable monomers may be monofunctional, difunctional, or trifunctional or more, but from the viewpoint of obtaining sufficient curability, polymerizable monomers with two or more functions may be used. Examples of polymerizable monomers include (meth)acrylates, vinylidene halides, vinyl ethers, vinyl esters, vinylpyridines, vinyl amides, and arylated vinyls. Polymerizable monomers may also be (meth)acrylates or (meth)acrylic acid. (Meth)acrylates may be monofunctional (meth)acrylates, difunctional (meth)acrylates, polyfunctional (meth)acrylates with three or more functions, or combinations thereof.

[0043] Examples of monofunctional (meth)acrylates include methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, isobutyl (meth)acrylate, tert-butyl (meth)acrylate, butoxyethyl (meth)acrylate, isoamyl (meth)acrylate, hexyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, heptyl (meth)acrylate, octylheptyl (meth)acrylate, nonyl (meth)acrylate, and decyl (meth)acrylate. 2-Hydroxyethyl (meth)acrylate, 2-Hydroxypropyl (meth)acrylate, 3-Chloro-2-Hydroxypropyl (meth)acrylate, 2-Hydroxybutyl (meth)acrylate, Methoxypolyethylene glycol (meth)acrylate, Ethoxypolyethylene glycol (meth)acrylate, Methoxypolypropylene glycol (meth)acrylate, Ethoxypolypropylene glycol (meth)acrylate, and mono(2-(meth)acryloyloxyethyl) succinate, etc. Aliphatic (meth)acrylates; as well as benzyl (meth)acrylate, phenyl (meth)acrylate, o-biphenyl (meth)acrylate, 1-naphthyl (meth)acrylate, 2-naphthyl (meth)acrylate, phenoxyethyl (meth)acrylate, p-cumylphenoxyethyl (meth)acrylate, o-phenylphenoxyethyl (meth)acrylate, 1-naphthoxyethyl (meth)acrylate, 2-naphthoxyethyl (meth)acrylate, phenoxypolyethylene glycol Aromatic (meth)acrylates such as (meth)acrylate, nonylphenoxypolyethylene glycol (meth)acrylate, phenoxypolypropylene glycol (meth)acrylate, 2-hydroxy-3-phenoxypropyl (meth)acrylate, 2-hydroxy-3-(o-phenylphenoxy)propyl (meth)acrylate, 2-hydroxy-3-(1-naphthoxy)propyl (meth)acrylate, and 2-hydroxy-3-(2-naphthoxy)propyl (meth)acrylate are examples.

[0044] Examples of difunctional (meth)acrylates include ethylene glycol di(meth)acrylate, diethylene glycol di(meth)acrylate, triethylene glycol di(meth)acrylate, tetraethylene glycol di(meth)acrylate, polyethylene glycol di(meth)acrylate, propylene glycol di(meth)acrylate, dipropylene glycol di(meth)acrylate, tripropylene glycol di(meth)acrylate, tetrapropylene glycol di(meth)acrylate, polypropylene glycol di(meth)acrylate, ethoxylated polypropylene glycol di(meth)acrylate, 1,3-butanediol di(meth)acrylate, 1,4-butanediol di(meth)acrylate, neopentyl glycol di(meth)acrylate, 3-methyl-1,5-pentanediol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, and 2-butyl-2-ethyl-1,3-propane Aliphatic (meth)acrylates such as diol di(meth)acrylate, 1,9-nonanediol di(meth)acrylate, 1,10-decanediol di(meth)acrylate, glycerin di(meth)acrylate, tricyclodecanedimethanol (meth)acrylate, and ethoxylated 2-methyl-1,3-propanediol di(meth)acrylate; as well as ethoxylated bisphenol A di(meth)acrylate, propoxylated bisphenol A di(meth)acrylate, Examples of aromatic (meth)acrylates include ethoxylated propoxylated bisphenol A di(meth)acrylate, ethoxylated bisphenol F di(meth)acrylate, propoxylated bisphenol F di(meth)acrylate, ethoxylated propoxylated bisphenol F di(meth)acrylate, ethoxylated fluorene-type di(meth)acrylate, propoxylated fluorene-type di(meth)acrylate, and ethoxylated propoxylated fluorene-type di(meth)acrylate.

[0045] Examples of polyfunctional (meth)acrylates with three or more functions include trimethylolpropane tri(meth)acrylate, ethoxylated trimethylolpropane tri(meth)acrylate, propoxylated trimethylolpropane tri(meth)acrylate, ethoxylated propoxylated trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, ethoxylated pentaerythritol tri(meth)acrylate, propoxylated pentaerythritol tri(meth)acrylate, ethoxylated propoxylated pentaerythritol tri(meth)acrylate, penta Examples include aliphatic (meth)acrylates such as erythritol tetra(meth)acrylate, ethoxylated pentaerythritol tetra(meth)acrylate, propoxylated pentaerythritol tetra(meth)acrylate, ethoxylated propoxylated pentaerythritol tetra(meth)acrylate, ditrimethylolpropane tetraacrylate, and dipentaerythritol hexa(meth)acrylate; and aromatic epoxy (meth)acrylates such as phenol novolac type epoxy (meth)acrylate and cresol novolac type epoxy (meth)acrylate.

[0046] These (meth)acrylates may be used individually or in combination of two or more. These (meth)acrylates may also be combined with other polymerizable monomers.

[0047] The polymerizable monomer content may be 10 to 60 parts by mass per 100 parts by mass of the curable resin composition constituting the curable resin layer 31.

[0048] A polymerization initiator is a compound that initiates the polymerization reaction of a polymerizable monomer by heating or irradiation with ultraviolet light or the like. For example, if the polymerizable monomer is a compound having an ethylenically unsaturated group, the polymerization initiator may be a thermal radical polymerization initiator, a photoradical polymerization initiator, or a combination thereof.

[0049] Examples of thermal radical polymerization initiators include diacyl peroxides such as octanoyl peroxide, lauroyl peroxide, stearyl peroxide, and benzoyl peroxide; t-butyl peroxypivalate, t-hexyl peroxypivalate, 1,1,3,3-tetramethylbutyl peroxy-2-ethylhexanoate, 2,5-dimethyl-2,5-bis(2-ethylhexanoylperoxy)hexane, t-hexyl peroxy-2-ethylhexanoate, t-butyl peroxy-2-ethylhexanoate, t-butyl peroxyisobutyrate, t-hexyl peroxyisopropyl monocarbonate, and t-butyl peroxyisopropyl monocarbonate. Examples include peroxyesters such as -oxy-3,5,5-trimethylhexanoate, t-butyl peroxylaurylate, t-butyl peroxyisopropyl monocarbonate, t-butyl peroxy-2-ethylhexyl monocarbonate, t-butyl peroxybenzoate, t-hexyl peroxybenzoate, 2,5-dimethyl-2,5-bis(benzoylperoxy)hexane, and t-butyl peroxyacetate; and azo compounds such as 2,2'-azobisisobutyronitrile, 2,2'-azobis(2,4-dimethylvaleronitrile), and 2,2'-azobis(4-methoxy-2'-dimethylvaleronitrile).

[0050] Examples of photoradical polymerization initiators include benzoin ketals such as 2,2-dimethoxy-1,2-diphenylethane-1-one; α-hydroxy ketones such as 1-hydroxycyclohexyl phenyl ketone, 2-hydroxy-2-methyl-1-phenylpropan-1-one, and 1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2-methyl-1-propan-1-one; and phosphine oxides such as bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide, bis(2,6-dimethoxybenzoyl)-2,4,4-trimethylpentylphosphine oxide, and 2,4,6-trimethylbenzoyldiphenylphosphine oxide.

[0051] These thermal and photoradical polymerization initiators may be used individually or in combination of two or more.

[0052] The content of the polymerization initiator may be 0.01 to 5 parts by mass per 100 parts by mass of the total amount of polymerizable monomers.

[0053] The curable resin composition constituting the curable resin layer 31 may further contain other components such as insulating fillers, sensitizers, and antioxidants.

[0054] Insulating fillers are added to curable resin compositions to impart low thermal expansion and low hygroscopicity. Examples of insulating fillers include non-metallic inorganic fillers such as silica, alumina, boron nitride, titania, glass, and ceramics. These insulating fillers may be used individually or in combination of two or more types.

[0055] The amount of insulating filler may be 5 to 20 parts by mass per 100 parts by mass of the total mass of the curable resin composition constituting the curable resin layer 31. When the amount of insulating filler is within this range, the cured curable resin layer 31c tends to have excellent heat resistance and good peelability.

[0056] Examples of sensitizers include anthracene, phenanthrene, chrysene, benzopyrene, fluorantene, rubrene, pyrene, xanthon, indanthrene, thioxanthene-9-one, 2-isopropyl-9H-thioxanthene-9-one, 4-isopropyl-9H-thioxanthene-9-one, and 1-chloro-4-propoxythioxanthone. The sensitizer content may be 0.01 to 10 parts by mass per 100 parts by mass of the total mass of the curable resin composition constituting the curable resin layer 31.

[0057] Examples of antioxidants include quinone derivatives such as benzoquinone and hydroquinone, phenol derivatives such as 4-methoxyphenol and 4-t-butylcatechol, aminoxyl derivatives such as 2,2,6,6-tetramethylpiperidine-1-oxyl and 4-hydroxy-2,2,6,6-tetramethylpiperidine-1-oxyl, and hindered amine derivatives such as tetramethylpiperidyl methacrylate. The antioxidant content may be 0.1 to 10 parts by mass per 100 parts by mass of the total mass of the curable resin composition constituting the curable resin layer 31.

[0058] The curable resin layer 31 is provided on the light-absorbing layer 32 by, for example, preparing a laminated film having a support film and a curable resin layer formed on the support film in advance and attaching it to the light-absorbing layer 32. The attachment of the laminated film to the light-absorbing layer 32 can be done at room temperature (20°C) or while heating using a roll laminator, vacuum laminator, etc. The laminated film having a support film and a curable resin layer can be obtained, for example, by a method including applying a resin varnish containing a thermosetting resin or polymerizable monomer, an organic solvent, and other components as needed to the support film, and removing the organic solvent from the coating. Alternatively, the curable resin layer 31 may be formed on the light-absorbing layer 32 by directly applying a similar resin varnish to the light-absorbing layer 32 and removing the organic solvent from the coating.

[0059] An example of the light-absorbing layer 32 is a conductive layer containing a conductor that absorbs light and generates heat. Examples of conductors constituting the conductive layer as the light-absorbing layer 32 include metals, metal oxides, and conductive carbon materials. The metal may be a single metal such as chromium, copper, titanium, silver, platinum, or gold, or an alloy such as nickel-chromium, stainless steel, or copper-zinc. Examples of metal oxides include indium tin oxide (ITO), zinc oxide, and niobium oxide. These may be used individually or in combination of two or more. The conductor may be chromium, titanium, or a conductive carbon material.

[0060] The light-absorbing layer 32 may be a single layer or a metal layer consisting of multiple layers. The metal layer tends to have a transmittance of 3.1% or less for incoherent light. For example, the light-absorbing layer 32 may be a metal layer consisting of a copper layer and a titanium layer. The metal layer as the light-absorbing layer 32 may be a layer formed by physical vapor deposition (PVD) such as vacuum deposition and sputtering, chemical vapor deposition (CVD) such as plasma chemical deposition, or a plated layer formed by electroplating or electroless plating. With physical vapor deposition, even if the support member 10 has a large area, the metal layer as the light-absorbing layer 32 that covers the surface of the support member 10 can be efficiently formed.

[0061] If the light-absorbing layer 32 is a single layer of metal, the light-absorbing layer 32 may contain at least one metal selected from the group consisting of thallium (Ta), platinum (Pt), nickel (Ni), titanium (Ti), tungsten (W), chromium (Cr), copper (Cu), aluminum (Al), silver (Ag), and gold (Au).

[0062] The light-absorbing layer 32 may consist of two layers, a first layer and a second layer, which are laminated in the order of the first layer and the second layer from the support member 10 side. In this case, for example, if the first layer has high light absorption and the second layer has a high coefficient of thermal expansion and a high modulus of elasticity, particularly good peelability can be easily obtained. From this viewpoint, for example, the first layer may contain at least one metal selected from the group consisting of thallium (Ta), platinum (Pt), nickel (Ni), titanium (Ti), tungsten (W), and chromium (Cr), and the second layer may contain at least one metal selected from the group consisting of copper (Cu), aluminum (Al), silver (Ag), and gold (Au). Alternatively, the first layer may contain at least one metal selected from the group consisting of titanium (Ti), tungsten (W), and chromium (Cr), and the second layer may contain at least one metal selected from the group consisting of copper (Cu) and aluminum (Al).

[0063] Another example of a light-absorbing layer is a layer containing conductive particles that absorb light and generate heat, and a binder resin in which the conductive particles are dispersed. The conductive particles may be particles containing the conductors described above. The binder resin may be a curable resin composition, in which case the light-absorbing layer constitutes a part of the curable resin layer 31. For example, the light-absorbing layer 31B in the temporary fixing laminate 1 of Figure 1(b) may be a layer containing conductive particles and a curable resin composition. The curable resin composition constituting the light-absorbing layer may contain the same components as the curable resin composition constituting the curable resin layers other than the light-absorbing layer. The curable resin composition constituting the light-absorbing layer may be the same as or different from the curable resin composition constituting the curable resin layers other than the light-absorbing layer. The content of conductive particles in the light-absorbing layer may be 10 to 90 parts by mass per 100 parts by mass of the binder resin or curable resin composition, i.e., the total amount of components other than conductive particles in the light-absorbing layer. If the conductive particle content is high, the light-absorbing layer is likely to have a transmittance of 3.1% or less for incoherent light. From the viewpoint of transmittance, the conductive particle content may be 20% by mass or more, or 30% by mass or more.

[0064] A light-absorbing layer containing conductive particles and a binder resin can be formed, for example, by a method that includes applying a varnish containing conductive particles, a binder resin, and an organic solvent onto a support member or a curable resin layer, and then removing the organic solvent from the coating. A pre-fabricated light-absorbing layer 32 may be laminated onto the support member 10 or a curable resin layer. A laminate consisting of a light-absorbing layer and a curable resin layer may be laminated onto the support member.

[0065] The thickness of the light-absorbing layer 32 may be 1 to 5000 nm or 100 to 3000 nm from the viewpoint of easy peelability. Also, if the thickness of the light-absorbing layer 32 is 50 to 300 nm, the light-absorbing layer 32 tends to have a sufficiently low transmittance. If the light-absorbing layer 32 is a single layer or a metal layer consisting of multiple layers, the thickness of the light-absorbing layer 32 (or metal layer) may be 75 nm or more, 90 nm or more, or 100 nm or more, or 1000 nm or less, from the viewpoint of good peelability. In particular, if the light-absorbing layer 32 is a single layer metal layer, the thickness of the light-absorbing layer 32 (or metal layer) may be 100 nm or more, 125 nm or more, 150 nm or more, or 200 nm or more, or 1000 nm or less, from the viewpoint of good peelability. Even if the light-absorbing layer 32 is a metal layer containing a metal with relatively low light absorption (e.g., Cu, Ni) or a metal layer containing a metal with a relatively low coefficient of thermal expansion (e.g., Ti), a larger thickness tends to result in better peelability.

[0066] The thickness of the temporary fixing material layer 30 (in the case of Figure 1(a), the total thickness of the light-absorbing layer 32 and the curable resin layer 31) may be 0.1 to 2000 μm or 10 to 500 μm from the viewpoint of stress relaxation.

[0067] After preparing the temporary fixing laminate 1, the semiconductor member 45 before processing is placed on the curable resin layer 31, as shown in Figure 3(a). The semiconductor member 45 has a semiconductor substrate 40 and a redistribution layer 41. The semiconductor member 45 may also have external connection terminals. The semiconductor substrate 40 may be a semiconductor wafer or a semiconductor chip obtained by dividing a semiconductor wafer. In the example of Figure 3(a), multiple semiconductor members 45 are placed on the curable resin layer 31, but the number of semiconductor members may be one.

[0068] The thickness of the semiconductor component 45 may be 1 to 1000 μm, 10 to 500 μm, or 20 to 200 μm, in order to miniaturize and thin the semiconductor device, as well as to suppress cracking during transport, processing, etc.

[0069] The semiconductor component 45 placed on the curable resin layer 31 is pressed against the curable resin layer 31 using, for example, a vacuum press or a vacuum laminator. When using a vacuum press, the pressing conditions can be a pressure of 1 hPa or less, a pressing pressure of 1 MPa, a pressing temperature of 120 to 200°C, and a holding time of 100 to 300 seconds. When using a vacuum laminator, the pressing conditions can be, for example, a pressure of 1 hPa or less, a pressing temperature of 60 to 180°C or 80 to 150°C, a lamination pressure of 0.01 to 0.5 MPa or 0.1 to 0.5 MPa, and a holding time of 1 to 600 seconds or 30 to 300 seconds.

[0070] After the semiconductor member 45 is placed on the curable resin layer 31, the semiconductor member 45 is temporarily fixed to the support member 10 via a temporary fixing material layer 30 having a cured curable resin layer 31c by thermal curing or photocuring the curable resin layer 31. The thermal curing conditions may be, for example, 300°C or less or 100-200°C for 1-180 minutes or 1-60 minutes.

[0071] Next, as shown in Figure 4(a), the semiconductor component temporarily fixed to the support member 10 is processed. Figure 4(a) shows an example of processing including thinning of the semiconductor substrate. Processing of the semiconductor component is not limited to this and may include, for example, thinning of the semiconductor substrate, dicing of the semiconductor component, formation of through electrodes, etching, plating reflow, sputtering, or a combination thereof.

[0072] Thinning of the semiconductor substrate 40 is performed by grinding the side of the semiconductor substrate 40 opposite to the redistribution layer 41 using a grinder or the like. The thickness of the thinned semiconductor substrate 40 may be, for example, 100 μm or less.

[0073] After processing the semiconductor member 45, a sealing layer 50 is formed to seal the processed semiconductor member 45, as shown in Figure 4(b). The sealing layer 50 can be formed using a sealing material commonly used for the manufacture of semiconductor devices. For example, the sealing layer 50 may be formed using a thermosetting resin composition. The thermosetting resin composition used for the sealing layer 50 includes epoxy resins such as cresol novolac epoxy resin, phenol novolac epoxy resin, biphenyl diepoxy resin, and naphthol novolac epoxy resin. The sealing layer 50 and the thermosetting resin composition for forming it may also contain additives such as fillers and / or flame retardants.

[0074] The sealing layer 50 is formed using, for example, a solid material, a liquid material, a fine-grained material, or a sealing film. When a sealing film is used, a compression sealing molding machine, a vacuum laminating device, etc., are used. For example, the sealing layer 50 can be formed by covering the semiconductor member 45 with a sealing film that has been heat-melted using these devices at a temperature of 40 to 180°C (or 60 to 150°C), a pressure of 0.1 to 10 MPa (or 0.5 to 8 MPa), and for 0.5 to 10 minutes. The thickness of the sealing film is adjusted so that the sealing layer 50 is greater than or equal to the thickness of the semiconductor member 45 after processing. The thickness of the sealing film may be 50 to 2000 μm, 70 to 1500 μm, or 100 to 1000 μm.

[0075] After forming the sealing layer 50, the sealing layer 50 and the curable resin layer 31c may be divided into multiple parts, each containing one semiconductor member 45, as shown in Figure 5(a).

[0076] As shown in Figure 5(b), incoherent light A is irradiated onto the temporary fixing laminate 1 from the support member 10 side, thereby separating the semiconductor member 45 from the support member 10. Irradiation with incoherent light A causes the light-absorbing layer 32 to absorb light and instantaneously generate heat. This generated heat can cause, for example, melting of the cured curable resin layer 31c, thermal stress between the support member 10 and the semiconductor member 45, and scattering of the light-absorbing layer 32. One or more of these phenomena are the main causes that allow the semiconductor member 45 to easily separate from the support member 10. If the curable resin composition constituting the curable resin layer 31 contains a hydrocarbon resin and the storage modulus of the cured curable resin layer at 25°C is 5 to 100 MPa, delamination at the interface between the light-absorbing layer 32 and the cured curable resin layer 31 tends to occur easily. This tendency is due to the energy amount of the incoherent light A being 5 to 25 J / cm². 2 This is particularly noticeable when the range is within this range. In order to separate the semiconductor member 45 from the support member 10, a small amount of stress may be applied to the semiconductor member 45 along with irradiation with incoherent light A.

[0077] Incoherent light A is non-coherent light, an electromagnetic wave that has properties such as not generating interference fringes, low coherence, and low directivity. Incoherent light tends to attenuate as the optical path length increases. Laser light is generally coherent light, while sunlight, fluorescent light, etc., are incoherent light. Incoherent light can also be defined as light other than laser light. The irradiation area of ​​incoherent light is generally overwhelmingly larger than that of coherent light (i.e., laser light), making it possible to reduce the number of irradiations. For example, a single irradiation can cause separation of multiple semiconductor components 45.

[0078] Incoherent light A may include infrared light. Incoherent light A may also be pulsed light. The light source for incoherent light A is not particularly limited, but may be a xenon lamp. A xenon lamp is a lamp that utilizes light emission by applying and discharging a discharge tube filled with xenon gas. Because a xenon lamp discharges while repeatedly ionizing and exciting, it stably has a continuous wavelength range from the ultraviolet light region to the infrared light region. Compared to lamps such as metal halide lamps, xenon lamps have a shorter start-up time, which can significantly reduce the time required for the process. In addition, although high heat is instantaneously generated because a high voltage is applied for light emission, xenon lamps are advantageous because they have a short cooling time and allow for continuous operation.

[0079] The irradiation conditions for the xenon lamp include the applied voltage, pulse width, irradiation time, irradiation distance (distance between the light source and the temporary fixing material layer), and irradiation energy, and these can be arbitrarily set according to the number of irradiations, etc. From the viewpoint of reducing damage to the semiconductor member 45, irradiation conditions that can separate the semiconductor member 45 in a single irradiation may be set.

[0080] A portion of the curable resin layer 31c may adhere to the separated semiconductor member 45 as a residue 31c'. The adhered residue 31c' is removed as shown in Figure 5(c). The residue 31c' is removed, for example, by washing with a solvent. The solvent is not particularly limited, but examples include ethanol, methanol, toluene, xylene, acetone, methyl ethyl ketone, methyl isobutyl ketone, hexane, etc. These may be used individually or in combination of two or more. To remove the residue 31c', the semiconductor member 45 may be immersed in the solvent or ultrasonic cleaning may be performed. The semiconductor member 45 may also be heated at a low temperature of about 100°C or below.

[0081] By the method illustrated above, a semiconductor element 60 comprising the processed semiconductor member 45 can be obtained. A semiconductor device can be manufactured by connecting the obtained semiconductor element 60 to another semiconductor element or a substrate for mounting semiconductor elements. [Examples]

[0082] The present invention will be described in more detail below with reference to examples. However, the present invention is not limited to these examples.

[0083] (Consideration 1) 1-1. Curable resin layer A 40% by mass elastomer solution was prepared by dissolving hydrogenated styrene-butadiene elastomer (product name: Dynalon 2324P, JSR Corporation) in toluene. A resin varnish was obtained by mixing the elastomer solution containing 80 parts by mass of hydrogenated styrene-butadiene elastomer with 20 parts by mass of 1,9-nonanediol diacrylate (product name: FA-129AS, Hitachi Chemical Co., Ltd.) and 1 part by mass of peroxyester (product name: Perhexa 25O, NOF Corporation).

[0084] The obtained resin varnish was applied to the release surface of a polyethylene terephthalate (PET) film (Purex A31, Teijin DuPont Films Ltd., thickness: 38 μm) using a precision coating machine. The coating was dried by heating at 80°C for 10 minutes to form a curable resin layer with a thickness of approximately 100 μm.

[0085] 1-2. Light-absorbing layer As support members, a glass slide, a frosted glass plate, and a silicon wafer, all measuring 40 x 40 mm, were prepared. On each support member, a titanium layer and then a copper layer were formed in that order by sputtering to create a light-absorbing layer consisting of two layers: a titanium layer (thickness: 20 nm) and a copper layer (thickness: 200 nm). In the sputtering process, the titanium and copper layers were formed by RF sputtering after pretreatment by reverse sputtering. The conditions for reverse sputtering (pretreatment) and RF sputtering are as follows. Reverse sputtering (pretreatment) ·Ar flow rate: 1.2×10 -2 Pa·m 3 / s(70sccm) ·RF power: 300W • Duration: 300 seconds RF sputtering ·Ar flow rate: 1.2×10 -2 Pa·m 3 / s(70sccm)

[0086] 1-3.Transmittance The transmittance of the support member and the light-absorbing layer to light irradiated from a xenon lamp was measured. The transmittance of the light-absorbing layer can be substantially considered as the transmittance of the temporary fixing material layer. The transmittance was measured using the same xenon lamp and spectrophotometer (USR-45, Ushio Inc.) as used in the peel test described later. The detection terminal of the spectrophotometer was placed 5 cm away from the light irradiation part of the xenon lamp. The light irradiated from the xenon lamp was directly detected by the detection terminal, and the amount of detected light was used as the baseline. Next, the object to be measured was placed between the detection terminal of the spectrophotometer and the xenon lamp, and the transmitted light irradiated from the xenon lamp and passed through the object to be measured was detected by the detection terminal. The ratio of the amount of detected transmitted light to the baseline was defined as the transmittance. The transmittance for the total amount of light in the wavelength range of 300 to 800 nm was calculated using the following formula. Transmittance (%) = {(Total light intensity at wavelengths of 300-800 nm) / (Total light intensity at baseline wavelengths of 300-800 nm)} × 100 Regarding the light-absorbing layer, the transmittance of the laminate having the support member and the light-absorbing layer was measured using light from a xenon lamp placed on the support member side. The amount of light incident on the light-absorbing layer was calculated from the baseline and the transmittance of the support member, and the ratio of the amount of transmitted light to this was defined as the transmittance of the light-absorbing layer.

[0087] 1-4. Peel Test A curable resin layer, cut to a size of 40 mm x 40 mm, was placed on a light-absorbing layer formed on each support member. The curable resin layer was adhered to the light-absorbing layer by vacuum lamination to obtain a temporary fixing laminate having a laminated structure of support member / light-absorbing layer / curable resin layer. A semiconductor chip (size: 10 mm x 10 mm, thickness: 150 μm) was placed on the curable resin layer of the temporary fixing laminate. The curable resin layer was cured by heating at 180°C for 1 hour to obtain a test specimen for peel test with the semiconductor chip temporarily fixed to the support member.

[0088] Each test specimen was irradiated with pulsed light from a xenon lamp from the support member side of the temporary fixing laminate. The light irradiation conditions were as follows: A Xenon S2300 lamp was used as the xenon lamp. The wavelength range of this device is 270 nm to the near-infrared region. The irradiation distance was the distance between the xenon lamp (the light source) and the support member. • Applied voltage: 3700V Pulse width: 200 μs ·Irradiation distance: 50mm • Number of irradiations: 1 ·Irradiation time: 200μs After irradiation with a xenon lamp, the condition of the test specimens was observed, and their peelability was evaluated according to the following criteria. The evaluation results are shown in Table 1. A: The semiconductor chip spontaneously detached from the temporary fixing laminate simply by light irradiation, or the semiconductor chip detached from the temporary fixing laminate without damage by inserting tweezers between the semiconductor chip and the curable resin layer. B: Even when tweezers were inserted between the semiconductor chip and the curable resin layer, the semiconductor chip did not detach from the temporary fixing laminate.

[0089] [Table 1]

[0090] (Consideration 2) A test specimen with a glass slide as a support member was prepared using the same procedure as in "Study 1," except that the thicknesses of the copper and titanium layers constituting the light-absorbing layer were changed as shown in Table 2. In Comparative Example 3, no light-absorbing layer was provided, and a curable resin layer was directly laminated onto the support member. In Comparative Example 4, only a titanium layer was formed as the light-absorbing layer. The peelability of the obtained test specimens was evaluated using the same peel test as in "Study 1." The transmittance of the light-absorbing layer was measured using the same method as in "Study 1." The evaluation results are shown in Table 2.

[0091] [Table 2]

[0092] (Consideration 3) A light-absorbing layer, consisting of one or two metal layers as shown in Table 3, was formed by sputtering on a 1300 μm thick glass slide serving as a support member. In the table, the configuration of the light-absorbing layer is shown in the order of lamination from the glass slide side. For example, "Ti(50) / Cu(200)" means that a 50 nm thick titanium layer and a 200 nm thick copper layer were laminated in this order from the glass slide side. Examples 1, 3, and 4 are the same as Examples 1, 3, and 4 of Study 2. A temporary fixing laminate having a support member / light-absorbing layer / curable resin layer lamination configuration was fabricated on the light-absorbing layer using the same procedure as in Study 1. Furthermore, a test specimen for peeling tests having a semiconductor chip temporarily fixed to the support member was fabricated using the same procedure as in Study 1. The transmittance of the light-absorbing layer was measured using the same method as in Study 1.

[0093] Each prepared test specimen was irradiated with pulsed light from a xenon lamp from the support member side of the temporary fixing laminate. The light irradiation conditions were as follows: A PulseForge1300 manufactured by Novacentrix was used as the irradiation device with a xenon lamp. The irradiation distance was the distance between the xenon lamp, which is the light source, and the support member. The pulse width was gradually increased from 150 μs in 10 μs increments, and the minimum pulse width at which the semiconductor chip spontaneously detached from the temporary fixing laminate by light irradiation alone was recorded. Pulsed light irradiation was performed while changing the test specimens, and each test specimen was irradiated only once. The minimum pulse width at which the semiconductor chip detached is shown in Table 3. • Applied voltage: 800V Pulse width: 150-700 μs ·Irradiation distance: 6mm • Number of irradiations: 1 Based on the minimum pulse width at which the semiconductor chip peels off, the peelability was evaluated according to the following criteria. AAA: 150μs AA: 160 μs or more and less than 350 μs A: 350 μs to 700 μs, or exfoliation due to dissolution of the light-absorbing layer (A(Melt)) B: Peeling is not possible if the time is 700μs or less.

[0094] [Table 3]

[0095] From the results of studies 1, 2, and 3, it was confirmed that by using a temporary fixing laminate including a combination of a support member with a transmittance of 90% or more and a light-absorbing layer with a transmittance of 3.1% or less, the semiconductor member can be easily separated from the support member by irradiation with incoherent light from a xenon lamp after the semiconductor member has been temporarily fixed. [Explanation of symbols]

[0096] 1... Laminate for temporary fixing, 10... Support member, 30... Temporary fixing material layer, 31... Curable resin layer, 31c... Cured curable resin layer, 32... Light absorption layer, 40... Semiconductor substrate, 41... Redistribution layer, 45... Semiconductor component, 50... Encapsulation layer, 60... Semiconductor element, S... Outermost surface of the temporary fixing material layer.

Claims

1. A step of preparing a temporary fixing laminate comprising a support member and a temporary fixing material layer provided on the support member, wherein the temporary fixing material layer has a curable resin layer including at least one outermost surface of the temporary fixing material layer, A semiconductor member having a semiconductor substrate and a redistribution layer provided on one side of the semiconductor substrate is temporarily fixed to the support member via the temporary fixing material layer, with the redistribution layer facing the curable resin layer. A step of processing the semiconductor member that has been temporarily fixed to the support member, The process involves irradiating the temporary fixing laminate with incoherent light from the support member side, thereby separating the semiconductor member from the support member, They are provided in this order, A part or all of the aforementioned temporary fixing layer is a light-absorbing layer that absorbs light and generates heat. The transmittance of the support member to the incoherent light is 90% or more. The transmittance of the temporary fixing material layer to the incoherent light is 3.1% or less. The incoherent light source is a xenon lamp. A method for manufacturing semiconductor devices.

2. The method according to claim 1, wherein the incoherent light includes infrared light.

3. The method according to claim 1 or 2, wherein the temporary fixing material layer has a metal layer provided as a separate layer from the curable resin layer as the light absorbing layer.

4. The method according to claim 3, wherein the transmittance of the metal layer to the incoherent light is 3.1% or less.

5. The light-absorbing layer has two layers, a first layer and a second layer, and is laminated in the order of the first layer and the second layer from the support member side. The aforementioned layer comprises at least one metal selected from the group consisting of thallium, platinum, nickel, titanium, tungsten, and chromium. The method according to claim 3 or 4, wherein the second layer comprises at least one metal selected from the group consisting of copper, aluminum, silver, and gold.

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