Metal film deposition

JP7833606B1Active Publication Date: 2026-03-19LAM RES CORP
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Filing Date
2025-12-08
Publication Date
2026-03-19

AI Technical Summary

Technical Problem

The continuous decrease in feature size and film thickness in semiconductor manufacturing poses challenges such as high resistivity of thinner tungsten films, necessitating the development of low-resistivity alternatives like molybdenum, and the need for improved deposition methods that can handle lower temperatures without significant nucleation delays.

Method used

A method involving atomic layer deposition (ALD) of a metal oxynitride or nitride nucleation layer followed by conversion to an elemental metal layer, using ammonia and hydrogen as reducing agents, allows for low-temperature deposition and subsequent growth of large-grain, low-resistivity metal films, such as molybdenum, on dielectric surfaces.

Benefits of technology

This approach enables the deposition of low-resistivity metal films at temperatures below 500°C, providing better step coverage and reducing resistivity by converting the nucleation layer into a pure metal layer with minimal impurities, suitable for advanced semiconductor applications.

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Abstract

The present invention provides a method and apparatus for depositing metal. [Solution] This specification provides low-resistance metallization stack structures and related manufacturing methods for logic and memory applications. In some embodiments, a thin metal oxynitride or metal nitride nucleation layer is deposited thereafter, followed by the deposition of a pure metal conductor. The nucleation layer is amorphous and serves as a template for large pure metal film grain growth and low resistivity. Furthermore, certain embodiments of the methods described later convert almost all or all of the metal oxynitride nucleation layer into a pure metal layer to further reduce resistivity.
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Citation Information

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