Control device for a film deposition amount measuring device, film deposition apparatus, film deposition amount measuring method, film deposition method, and method for manufacturing electronic devices

Abstract

To provide a film deposition amount measuring apparatus, a film deposition device, a film deposition amount measuring method, a film deposition method, and a manufacturing method for electronic device that can increase productivity.SOLUTION: In a first period, a film deposition amount is measured using a first crystal vibrator, the measurement of the film deposition amount by the first crystal vibrator is stopped until a second period starts after the first period has ended. In the second period, a film deposition amount is measured using the first crystal vibrator, and in a third period in the period from the end of the first period to the start of the second period, a film deposition amount is measured using a second crystal vibrator. In the second period, the film deposition amount is measured by the first crystal vibrator over a period longer than the first period.SELECTED DRAWING: Figure 5

Description

Technical Field

[0001] The present invention relates to a film thickness measurement apparatus for measuring the film thickness on a substrate control device , a film forming apparatus, a film thickness measurement method, a film forming method, and a method for manufacturing an electronic device.

Background Art

[0002] In a film forming apparatus such as a vacuum evaporation apparatus, a technique including a film thickness measurement apparatus using a crystal oscillator is known for measuring the film thickness on a substrate. This film thickness measurement apparatus is provided in a chamber in which a substrate and a film forming source (such as an evaporation source) are arranged, and measures the film thickness on the substrate by obtaining a film forming rate from the natural frequency that changes according to the amount of film forming material adhering to the crystal oscillator. Thereby, by controlling the discharge amount of the film forming material from the film forming source, a thin film with a desired thickness can be formed on the substrate. Patent Document 1 discloses measuring the film thickness by sequentially using a plurality of crystal oscillators.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] When starting to use a new crystal oscillator, it is conceivable that the measurement results will not be stable for some time after the start of use. In addition, if the crystal oscillator used for measurement is frequently replaced, the consumption of the drive mechanism for replacing the crystal oscillator will be accelerated, which may increase the maintenance cost and time of the drive mechanism.

[0005] An object of the present invention is a film thickness measurement apparatus capable of enhancing productivity control deviceThe objective is to provide a film deposition apparatus, a method for measuring the amount of film deposited, a film deposition method, and a method for manufacturing electronic devices. [Means for solving the problem]

[0006] The control device for the film deposition amount measuring device of the present invention is Using a plurality of crystal oscillators, including at least a first crystal oscillator and a second crystal oscillator, in sequence In a film deposition apparatus, a film is deposited on a substrate by a film deposition source under a reduced pressure atmosphere. Measuring the amount of film deposited for A control device comprising a control unit for controlling a film deposition amount measuring device, The film deposition amount measuring device is equipped with a plurality of quartz crystal oscillators, and the control unit controls the film deposition amount measuring device so that the quartz crystal oscillator used for measurement can be changed. The control unit, During the first period, the first quartz oscillator is used To multiple substrates Measurement of film deposition amount sequentially line To achieve this, the film deposition amount measuring device is controlled so that the film deposition material adheres to the first quartz oscillator. , After the first period ends This is a longer period than the period described in the first paragraph. Until the start of the second period, the measurement of the film deposition amount by the first quartz oscillator will be suspended. To that end, the film deposition amount measuring device is controlled so that the film deposition material does not adhere to the first quartz oscillator. , The third period between the end of the first period and the start of the second period. to, Using the second quartz oscillator described above To multiple substrates Measurement of film deposition amount sequentially line To achieve this, the film deposition amount measuring device is controlled so that the film deposition material adheres to the second quartz oscillator. , The second period to, Using the first quartz oscillator described above To multiple substrates Measurement of film deposition amount sequentially line To achieve this, the film deposition amount measuring device is controlled so that the film deposition material adheres to the first quartz oscillator. The first substrate in the second period using the first quartz oscillator In measuring the amount of film deposited, the time required for the measurement results to stabilize is The first To make it shorter than the time required to replace the circuit board. ,before First crystal oscillator Stop measuring the amount of film deposited using this method. Set a pause period. It is characterized by the following:

[0007] By adopting this configuration, the frequency of replacing the quartz crystal oscillator used for measuring the amount of film deposited can be reduced. [Effects of the Invention]

[0008] As described above, according to the present invention, productivity can be improved.

Brief Description of the Drawings

[0009] [Figure 1] Schematic configuration diagram of a film forming apparatus. [Figure 2] Schematic configuration diagram of a film thickness measurement apparatus. [Figure 3] Plan view of the main configuration in the film thickness measurement apparatus. [Figure 4] Explanation diagram regarding the rate stability of a crystal oscillator. [Figure 5] Film forming process diagram in the film forming apparatus. [Figure 6] Film forming process diagram in the film forming apparatus. [Figure 7] Film forming process diagram in the film forming apparatus. [Figure 8] Explanation diagram of an organic EL display device. [Figure 9] Schematic configuration diagram of a film forming apparatus.

Embodiments for Carrying Out the Invention

[0010] Hereinafter, with reference to the drawings, embodiments for carrying out this invention will be illustratively and specifically described based on examples. However, dimensions, materials, shapes, relative arrangements, etc. of the component parts described in this example are not intended to limit the scope of this invention only to those, unless there are specific descriptions.

[0011] (Embodiment) Referring to FIGS. 1 to 5, a film thickness measurement apparatus, a film forming apparatus, a film thickness measurement method, and a film forming method according to an embodiment of the present invention will be described. The film forming apparatus according to this embodiment is a vacuum evaporation apparatus that forms a thin film on a substrate using a vapor deposition material.

[0012] <Film Forming Apparatus> The film deposition apparatus according to this embodiment will be described with reference to Figure 1. Figure 1 is a schematic diagram of the film deposition apparatus according to the present invention, and shows the main components of the film deposition apparatus in a simplified manner.

[0013] The film deposition apparatus 1 comprises a chamber 10 configured to be in a near-vacuum state (reduced pressure atmosphere) by a vacuum pump, and an evaporation source 100 positioned inside the chamber 10 as a film deposition source. The evaporation source 100 plays the role of evaporating or sublimating the material (film deposition material) to be deposited on the substrate S by heating it. The material evaporated or sublimated by this evaporation source 100 adheres to the film deposition surface of the substrate S placed inside the chamber 10, forming a thin film on the substrate S. A mask M with an opening that matches the shape of the thin film to be formed is positioned on the film deposition surface side of the substrate S, and the film deposition process (evaporation process) is performed with the substrate S and mask M positioned.

[0014] The evaporation source 100 includes a container 110, such as a crucible, for containing the film-forming material T, and a heating device 120 for heating the container 110. The tip of the container 110 is provided with a nozzle 111 for releasing the evaporated or sublimated material. The film-forming apparatus 1 also includes a shutter 20 that switches between a state in which the material released from the nozzle 111 can adhere to the substrate S and a state in which the material is blocked so that it does not adhere to the substrate S. The opening and closing mechanism of the shutter 20 can be appropriately adapted from known technologies.

[0015] Furthermore, the film deposition apparatus 1 is equipped with a film deposition amount measuring device 200 located inside the chamber 10 for measuring the amount of film deposited on the substrate S. This film deposition amount measuring device 200 comprises a main body 210, a monitor head 220, and a shutter 230. The film deposition amount measuring device 200 is configured to deposit a portion of the material released from the evaporation source 100 onto a quartz crystal oscillator 222 provided on the monitor head 220. When the amount of film deposition material deposited on the quartz crystal oscillator 222 changes, the resonant frequency (natural frequency) of the quartz crystal oscillator 222 changes. By utilizing this property, the amount of film deposited on the substrate S can be measured. Furthermore, the thin film formed on the substrate S can be made to a desired thickness. This point will be explained in more detail.

[0016] The film deposition apparatus 1 is equipped with a control device 300. This control device 300 comprises a first control unit 310 that controls the evaporation source 100 and a second control unit 320 that controls the film deposition amount measuring device 200. The second control unit 320 detects the resonant frequency of the quartz crystal oscillator 222 and obtains the amount of film deposited per unit time (deposition rate) on the quartz crystal oscillator. Needless to say, the amount of film deposited on the substrate S can be measured based on the amount of film deposited on the quartz crystal oscillator 222. As described above, if the amount of film deposited on the quartz crystal oscillator 222 (amount of film deposition material attached) exceeds a certain amount, the detection accuracy decreases and the quartz crystal oscillator must be replaced with a new one. For this reason, during the film deposition process on the substrate S, film deposition is generally controlled to occur continuously on the substrate S, while film deposition on the quartz crystal oscillator is controlled to occur intermittently. Consequently, the amount of film deposited on the quartz crystal oscillator 222 and the amount of film deposited on the substrate S do not necessarily coincide.

[0017] Then, based on the acquired film deposition rate, the control device 300 controls the heating temperature of the heating device 120 via the first control unit 310 in order to control the amount of material released. In this way, by continuously measuring the film deposition rate with the film deposition amount measuring device 200 and the control device 300, and controlling the heating temperature of the heating device 120 to control the film deposition rate, a thin film of a desired thickness can be formed on the substrate S with high precision.

[0018] <Film deposition amount measuring device> The film deposition amount measuring device according to this embodiment will be described with reference to Figures 2 and 3. Figure 2 is a schematic diagram of the film deposition amount measuring device according to this embodiment, and the main components of the device are simply shown by schematic cross-sectional views, etc. Figure 3 is a plan view of the main components of the film deposition amount measuring device according to this embodiment, and a part of it is shown in perspective. In Figure 3, the transparent components are shown by dotted lines.

[0019] Inside the monitor head 220, there is a crystal holder 223 that holds multiple crystal oscillators 222. In this embodiment, the multiple crystal oscillators 222 are arranged at equal intervals in the circumferential direction. The crystal holder 223 is configured to be rotatable by being fixed to the rotation axis 224a of a servo motor 224 provided on the main body 210 of the device. The monitor head 220 has an opening 221 at one location. By rotating the crystal holder 223 with the servo motor 224 and positioning a specific crystal oscillator 222 facing the opening 221, this crystal oscillator 222 can be used for measurement. That is, the film deposition material enters through the opening 221 and adheres to the crystal oscillator 222, making it possible to measure the amount of film deposition. Furthermore, the device is configured so that the film deposition material does not adhere to crystal oscillators 222 that are not used for measuring the amount of film deposition. Thus, the housing of the monitor head 220 has an opening 221 at a position facing the quartz crystal oscillator 222 used for measuring the amount of film deposited, and functions as a shutter to shield the quartz crystal oscillator 222, which is not used for measuring the amount of film deposited, from adhering to it.

[0020] Multiple detection units 225 are provided on the back side of the holding surface of the crystal oscillator 222 in the crystal holder 223, and a detection unit 226 is provided on the main body of the device 210. These detection units 226 and detection units 225 allow the crystal holder control unit 321 in the second control unit 320 to detect the phase of the rotational position of the crystal holder 223, and the servo motor 224 can control the rotation of the crystal holder 223. Note that the detection of the rotational position of the crystal holder 223 is not limited to this configuration; various technologies, such as rotary encoders, can be employed.

[0021] The shutter 230 is configured to be rotatable by being fixed to the rotation shaft 232a of the servo motor 232 provided on the main body 210 of the device. The shutter 230 has a trapezoidal shape in one place. A slit-shaped opening 231 is provided. When this opening 231 overlaps with the opening 221 of the monitor head 220, a specific quartz crystal oscillator 222 is exposed, and some of the material released from the nozzle portion 111 of the evaporation source 100 adheres to this quartz crystal oscillator 222.

[0022] The shutter 230 is provided with multiple detection units 233, and the device body 210 is provided with a detection unit 234. These detection units 234 and detection units 233 allow the shutter control unit 323 in the second control unit 320 to detect the phase of the rotational position of the shutter 230, enabling the servo motor 232 to control the rotation of the shutter 230. Note that the detection of the rotational position of the shutter 230 is not limited to this configuration; various technologies, such as rotary encoders, can be employed.

[0023] By rotating the shutter 230, configured as described above, at a constant speed during film deposition on the substrate S, the deposition of the film-forming material onto the quartz crystal oscillator 222 is performed intermittently, thereby suppressing the amount of film deposited on the quartz crystal oscillator 222. This makes it possible to extend the lifespan of the quartz crystal oscillator 222.

[0024] The quartz oscillator 222 is connected to the external resonator 227 via electrodes and a coaxial cable. The oscillation signal generated by applying a voltage between the thin film of the deposition material deposited on the surface of the quartz oscillator 222 and the electrode on the back surface is transmitted from the external resonator 227 to the deposition rate acquisition unit 322 and acquired as the resonant frequency (change in frequency) of the quartz oscillator 222.

[0025] <Characteristics of a Quartz Crystal Oscillator> This section describes the characteristics of quartz crystal oscillators used to measure the film deposition rate, based on empirical rules and experimental findings. New quartz crystal oscillators have difficulty with film deposition material adhesion, and the film deposition rate is unstable in the initial stages of deposition. This is particularly pronounced when the film deposition material is magnesium (Mg). Therefore, since the oscillator cannot be used for measurement until the film deposition rate stabilizes, it is desirable to perform preliminary film deposition for a predetermined period before measurement. Furthermore, the thicker the film of the film deposition material attached to the quartz crystal oscillator, the shorter the period required for the film deposition rate to stabilize.

[0026] Furthermore, as mentioned above, if the amount of film deposited on the quartz oscillator exceeds a certain amount, the detection accuracy will decrease. Therefore, if too much film is deposited during preliminary deposition, not only will the lifespan of the quartz oscillator be shortened, but the deposition material will also be wasted. For this reason, it is desirable to keep the amount of film deposited during preliminary deposition to the absolute minimum necessary.

[0027] Furthermore, the longer the period between stopping and restarting film deposition on the quartz oscillator (hereinafter referred to as the "pause period"), the longer the period it takes for the film deposition rate to stabilize after restarting film deposition.

[0028] Based on the above findings, Fig. 4 shows a graph that model - shows the relationship between the elapsed time and the period required for the film - forming rate to stabilize. For the sake of convenience, the graph is shown linearly, but in reality, it is a curved graph. In the figure, T is the period required for the film - forming rate to stabilize in a new crystal oscillator. Also, in the figure, t is the substrate replacement period, which is the period required to move the substrate after film - forming away from the film - forming position and to move a new substrate to the film - forming position until film - forming on the new substrate becomes possible. In the graph, the solid - line part is the graph during the period when film - forming is being performed on the crystal oscillator, and the dotted - line part is the graph during the period when no film - forming is being performed on the crystal oscillator.

[0029] As shown in this graph, when the film - forming on the crystal oscillator is stopped at the time when the period required for the film - forming rate to stabilize becomes R(<t), and the film - forming is resumed after passing through the rest period X, the period required for the film - forming rate to stabilize becomes longer than the replacement period t. Note that the "period required for the film - forming rate to stabilize" can also be referred to as the "period required for the measurement results to stabilize". Therefore, even after the substrate is arranged at the film - forming position and is ready, the crystal oscillator can only be used for measuring the film - forming rate after waiting for the period Z, and during this time, film - forming on the substrate cannot be performed. On the other hand, when the film - forming on the crystal oscillator is stopped at the time when the period required for the film - forming rate to stabilize becomes R, and the film - forming is resumed before passing through the rest period Y, the period required for the film - forming rate to stabilize is shorter than the replacement period t. Therefore, immediately after the substrate is arranged at the film - forming position and is ready, the crystal oscillator can be used for measuring the film - forming rate, so that film - forming on the substrate can be performed immediately after the substrate is arranged at the film - forming position and is ready. 膜レートが安定するまでに必要な期間」は、「測定結果が安定するまでに要する期間」ということもできる。そのため、基板を成膜位置に配して準備が整った後も、期間Zだけ待ってからしか水晶振動子を成膜レートの測定に用いることができず、その間、基板への成膜を行うことができない。これに対し、成膜レートが安定するまでに必要な期間がRになった時点で、水晶振動子への成膜を停止して、休止期間Yを経過する前の時点で成膜を再開した場合には、成膜レートが安定するまでに必要な期間は交換期間tよりも短い。従って、基板を成膜位置に配して準備が整った後に、直ちに水晶振動子を成膜レートの測定に用いることができるので、基板を成膜位置に配して準備が整った直後に基板への成膜を行うことができる。 The "period required for the film - forming rate to stabilize" can also be referred to as the "period required for the measurement results to stabilize". Therefore, even after the substrate is arranged at the film - forming position and is ready, the crystal oscillator can only be used for measuring the film - forming rate after waiting for the period Z, and during this time, film - forming on the substrate cannot be performed. On the other hand, when the film - forming on the crystal oscillator is stopped at the time when the period required for the film - forming rate to stabilize becomes R, and the film - forming is resumed before passing through the rest period Y, the period required for the film - forming rate to stabilize is shorter than the replacement period t. Therefore, immediately after the substrate is arranged at the film - forming position and is ready, the crystal oscillator can be used for measuring the film - forming rate, so that film - forming on the substrate can be performed immediately after the substrate is arranged at the film - forming position and is ready.

[0030] <Film - forming process according to this embodiment> Referring to Figure 5, the film deposition process in the film deposition apparatus according to this embodiment will be described. Figure 5 is a diagram of the film deposition process in the film deposition apparatus according to this embodiment. Generally, in a film deposition apparatus, a predetermined number of substrates are deposited within the production period of one lot. In Figure 5, arrow A indicates the production period of one lot, and arrow B indicates the film deposition period for one substrate. The replacement period t is as described above. The film deposition period B for one substrate and the replacement period t are always constant during the production period A of one lot. During the replacement period t, the discharge of material from the nozzle 111 continues, but the shutter 20 closes to prevent the material from flying to the position where the substrate S is placed. Even when the shutter 20 is closed, film deposition on the quartz oscillator 222 is still possible.

[0031] In the film deposition amount measuring device 200 according to this embodiment, n (n≧2) quartz crystal oscillators are used to measure the film deposition amount during the production period A of one lot. For convenience, the n quartz crystal oscillators are referred to as the first quartz crystal oscillator, the second quartz crystal oscillator, ..., the nth quartz crystal oscillator. As one example of operation, the device is configured to measure the film deposition amount on the substrate S based on the amount of film deposition material attached to each quartz crystal oscillator in the order of the first to the nth quartz crystal oscillator, and then repeat the measurement of the film deposition amount in the order of the first to the nth quartz crystal oscillators. This order can be changed as appropriate. For example, after using the quartz crystal oscillators in the order of the first to the nth quartz crystal oscillators for measurement, the order used for the second measurement may be changed. Also, some quartz crystal oscillators may be used only once and not used a second time. The crystal oscillator used for measurement is replaced by rotating the crystal holder 223 with a servo motor 224 to position the crystal oscillator 222 to face the opening 221 (see Figure 2). Any of the n crystal oscillators 222 provided in the crystal holder 223 can be used for the measurement. Furthermore, when replacing the crystal oscillator 222, the replacement can be done by rotating the crystal holder 223 in one direction (forward rotation) only, or by rotating it in both forward and reverse directions. Additionally, multiple crystal oscillators may be configured to be used simultaneously for measurement so that measurements can be performed continuously.

[0032] In the figure, arrow C1 indicates the period during which the first quartz oscillator is used for measurement, arrow C2 indicates the period during which the second quartz oscillator is used for measurement, and arrow Cn indicates the period during which the nth quartz oscillator is used for measurement. The period during which a quartz oscillator is used for measurement is, for example, the period during which the quartz oscillator is positioned at the location where it is used for measurement (the position facing the aperture 221). During this time, measurements may be performed continuously or intermittently using the quartz oscillator. The dotted lines before the solid lines of arrows C1, C2, and Cn indicate the period from when the quartz oscillator 222 is positioned at the location facing the aperture 221 and film deposition begins until it is used for measurement. In the figure, period u1 is the period during which the quartz oscillator 222 used for measuring the amount of film deposition is replaced, and period u2 is the period from when film deposition begins on the replaced quartz oscillator until it is used for measurement. Note that period u1 is sufficiently short compared to period u2 and the replacement period t, so it can be ignored.

[0033] Here, in order to set t = u1 + u2 (≒ u2), the crystal oscillator 222 It is necessary to replace the crystal oscillator and ensure that the time required for the deposition rate to stabilize in the replaced crystal oscillator 222 is less than or equal to t. Therefore, the crystal oscillators from the first to the nth used for measurement have the deposition material attached to them in advance before deposition on the substrate. That is, during the preparation period when the shutter 20 is closed, the deposition material is released from the evaporation source 100 and the crystal oscillators from the first to the nth are sequentially deposited (pre-coated).

[0034] After the pre-coating of the first to nth quartz oscillators is completed, film deposition on the substrate S begins. As described above, during the production period A of one lot, a predetermined number of substrates are sequentially subjected to film deposition. During the production period A of one lot, the release of material from the evaporation source 100 continues, the shutter 20 is open during film deposition on the substrate S, and the shutter 20 is closed during the exchange period t. Then, after the first to nth quartz oscillators are used in this order for measuring the amount of film deposition, the measurement of the amount of film deposition is repeated again in the order of the first to nth quartz oscillators. In this embodiment, as shown in Figure 5, the period used for measuring the amount of film deposition for each quartz oscillator is longer for the second and subsequent uses than for the first use. Furthermore, the period used for the first use and the period used for the second use are all equal for each quartz oscillator. It is desirable that the periods used for the third and subsequent uses also be equal. This makes it possible to make the lifespan of each quartz oscillator uniform. Note that it is not necessary for the period used for the second and subsequent uses to be longer than the period used for the first use for all quartz oscillators. For some crystal oscillators, the initial usage period may be the same as the period of subsequent usage, or the period of subsequent usage may be shorter than the initial usage period. As long as the period of subsequent usage is longer than the initial usage period for at least one crystal oscillator, the usage periods and order of usage for the other crystal oscillators do not matter. Also, the period of the second usage and the period of third and subsequent usage do not necessarily have to be equal.

[0035] Also, as described above, in order to set t = u1 + u2 (≈ u2), it is necessary to replace the crystal oscillator 222 during the replacement period t, and for the crystal oscillator 222 after replacement, the period required for the film formation rate to stabilize should be t or less. Therefore, after using a certain crystal oscillator (the Z-th crystal oscillator) for measuring the film formation amount (after stopping the film formation on the crystal oscillator), the rest period until starting the film formation on the Z-th crystal oscillator again for using the Z-th crystal oscillator to measure the film formation amount needs to be set such that the period required for the film formation rate on the Z-th crystal oscillator to stabilize when starting the film formation on the Z-th crystal oscillator after this rest period is shorter than the replacement period t.

[0036] Regarding this point, further explanation is as follows. As shown in FIG. 5, let the rest period of the first crystal oscillator be S1, the rest period of the second crystal oscillator be S2, ···, and the rest period of the n-th crystal oscillator be Sn. For example, for the first crystal oscillator, in order to use it for measuring the film formation amount after the rest period S1 has elapsed, it is only necessary that the period required for the film formation rate to stabilize at the time of restarting the film formation on the first crystal oscillator is shorter than the replacement period t. That is, as described with reference to FIG. 4, if the period required for the film formation rate to stabilize is R when the first measurement of the first crystal oscillator ends (when the film formation on the first crystal oscillator stops), it is only necessary to satisfy S1 < Y. The same applies to S2, ···, Sn.

[0037] FIG. 7 is a film formation process diagram of a film formation apparatus according to a reference example. Generally, in a film formation apparatus, film formation is performed on a predetermined number of substrates within the production period of one lot. The arrow A in FIG. 7 indicates the production period of one lot, and the arrow B indicates the film formation period for one substrate. In order to switch from the substrate after film formation to a new substrate, it is necessary to move the substrate after film formation from the film formation position and move a new substrate to the film formation position, etc., so a certain period (substrate replacement period t) is required.

[0038] In a film deposition rate measuring device, the detection accuracy of the quartz crystal oscillator decreases when the amount of deposition material attached exceeds a certain amount, requiring replacement with a new quartz crystal oscillator. Therefore, generally, multiple quartz crystal oscillators are used during one production lot. Figure 7 shows an example where three quartz crystal oscillators (hereinafter referred to as the first quartz crystal oscillator, the second quartz crystal oscillator, and the third quartz crystal oscillator) are used. In the figure, arrow C1 indicates the period during which the first quartz crystal oscillator is used for measurement, arrow C2 indicates the period during which the second quartz crystal oscillator is used for measurement, and arrow C3 indicates the period during which the third quartz crystal oscillator is used for measurement. Since the film deposition rate of the quartz crystal oscillator does not stabilize until a certain amount of deposition material has attached, it is used for measurement after a certain period has elapsed since the attachment of the deposition material (film deposition) began. Therefore, even if the first quartz crystal oscillator is replaced with the second quartz crystal oscillator after the measurement using the first quartz crystal oscillator is completed, it is necessary to perform the measurement using the second quartz crystal oscillator after a predetermined period T has elapsed since the start of film deposition on the second quartz crystal oscillator. If this period T is longer than the substrate replacement period t mentioned above, even after moving a new substrate to the deposition position and preparing it, deposition must be performed only after waiting for (Tt). This leads to a decrease in productivity and also results in the unnecessary consumption of deposition materials.

[0039] Therefore, one could consider a method that shortens the time used for a single measurement with a specific quartz crystal oscillator and repeatedly uses multiple quartz crystal oscillators. In this case, from the second measurement onwards, since the film deposition material has already adhered to the quartz crystal oscillator, the next quartz crystal oscillator can be used for measurement in a short period of time. However, in this case, the drive mechanism for changing the quartz crystal oscillator used for measurement will wear out faster, which not only increases the maintenance cost of the drive mechanism but also lengthens the time required for maintenance. Consequently, even if productivity can be increased on a per-lot basis, it is difficult to say that productivity will be increased when considering multiple lots.

[0040] <Advantages of the film deposition amount measuring device and film deposition device according to this embodiment> According to the film deposition amount measuring apparatus and film deposition apparatus of this embodiment, even when replacing the quartz oscillator 222 used for measuring the film deposition amount, the quartz oscillator 222 can be immediately used to measure the film deposition rate after the new substrate S has been placed in the film deposition position and preparations are complete. Therefore, productivity per lot can be increased. Furthermore, the wasteful consumption of film deposition material can be suppressed.

[0041] Furthermore, the period used to measure the film deposition amount for each of the first to nth quartz oscillators is longer for subsequent uses than for the first use. This helps to suppress the frequency of quartz oscillator replacement. As a result, wear on the drive mechanism for replacing quartz oscillators can be reduced, and the period required for maintenance of the drive mechanism can be kept from becoming too long. Maintenance costs can also be reduced. Therefore, productivity can be increased even when considering multiple lot units.

[0042] (Examples) In the above embodiment, if t = u1 + u2 (≒u2) can be satisfied, the number of quartz oscillators 222 used to measure the film deposition amount during the production period of one lot is not limited as long as it is 2 or more. Here, as an example, the case where n = 3 will be explained with reference to Figure 6. In this embodiment, the same quartz oscillator 222 is configured to be used for measurement twice.

[0043] Figure 6 is a diagram of the film deposition process in the film deposition apparatus according to this embodiment. As described in the above embodiment, arrow A indicates the production period for one lot, and arrow B indicates the film deposition period for one substrate. t, u1, and u2 are also as described in the embodiment.

[0044] In the film deposition amount measuring device 200 according to this embodiment, three quartz crystal oscillators are used to measure the film deposition amount during the production period A of one lot. For convenience, the three quartz crystal oscillators will be referred to as the first quartz crystal oscillator, the second quartz crystal oscillator, and the third quartz crystal oscillator. The device is configured to measure the film deposition amount on the substrate based on the amount of film deposition material attached to each quartz crystal oscillator in the order of the first quartz crystal oscillator, the second quartz crystal oscillator, and the third quartz crystal oscillator, and then repeat the measurement of the film deposition amount in the order of the first quartz crystal oscillator, the second quartz crystal oscillator, and the third quartz crystal oscillator.

[0045] In the figure, arrow C1 indicates the period during which the first quartz crystal oscillator is used for measurement, arrow C2 indicates the period during which the second quartz crystal oscillator is used for measurement, and arrow C3 indicates the period during which the third quartz crystal oscillator is used for measurement.

[0046] Then, in order to make t = u1 + u2 (≒ u2), pre-coating is sequentially applied to the first to third quartz oscillators before film deposition on the substrate S. After the pre-coating of these quartz oscillators is completed, film deposition on the substrate S begins. As described above, in the production period A of one lot, film deposition is sequentially applied to a predetermined number of substrates. Then, after the first to third quartz oscillators are used in this order for measuring the amount of film deposited, the measurement of the amount of film deposited is repeated in the same order for the first to third quartz oscillators. In this embodiment, the period used for measuring the amount of film deposited for each quartz oscillator is longer the second time it is used than the first time. Also, the period used for the first time and the period used for the second time are all the same for each quartz oscillator.

[0047] As shown in the figure, let the rest period of the first crystal oscillator be S1, the rest period of the second crystal oscillator be S2, and the rest period of the third crystal oscillator be S3. For example, for the first crystal oscillator, in order to use it for measuring the film deposition amount after the rest period S1 has elapsed, when restarting the film deposition on the first crystal oscillator, it is only necessary that the period until the film deposition rate stabilizes is shorter than the replacement period t. That is, as described with reference to FIG. 4, when the period required until the film deposition rate stabilizes is R at the time when the first measurement of the first crystal oscillator ends (the time when the film deposition on the first crystal oscillator stops), it is only necessary to satisfy S1 < Y. The same applies to S2 and S3.

[0048] By adopting the film deposition process as described above, the effects described in the above embodiment can be obtained.

[0049] As a modification, among the plurality of crystal oscillators, for the first crystal oscillator, the usage period after the second time can be made longer than the first usage period, and for the other crystal oscillators, all usage periods can be made equal.

[0050] <Method for manufacturing an electronic device> An example of a method for manufacturing an electronic device using the film deposition apparatus according to this embodiment will be described. Hereinafter, the configuration of an organic EL display device will be shown as an example of an electronic device, and the manufacturing method of the organic EL display device will be exemplified.

[0051] First, the organic EL display device to be manufactured will be described. FIG. 8(a) is an overall view of the organic EL display device 500, and FIG. 8(b) shows the cross-sectional structure of one pixel.

[0052] As shown in Figure 8(a), the display area 501 of the organic EL display device 500 has multiple pixels 502, each having multiple light-emitting elements, arranged in a matrix. As will be explained in detail later, each light-emitting element has a structure comprising an organic layer sandwiched between a pair of electrodes. Here, a pixel refers to the smallest unit that enables the display of a desired color in the display area 501. In the organic EL display device according to this embodiment, the combination of the first light-emitting element 502R, the second light-emitting element 502G, and the third light-emitting element 502B, each exhibiting different light emission, forms a pixel 502 The following is the configuration. Pixel 502 is often composed of a combination of red, green, and blue light-emitting elements, but it may also be a combination of yellow, cyan, and white light-emitting elements; as long as there is at least one color, there are no particular limitations.

[0053] Figure 8(b) is a schematic partial cross-sectional view of Figure 8(a) along the VV line. Pixel 502 consists of multiple light-emitting elements, each light-emitting element having a first electrode (anode) 504, a hole transport layer 505, one of the light-emitting layers 506R, 506G, or 506B, an electron transport layer 507, and a second electrode (cathode) 508 on the substrate 503. Of these, the hole transport layer 505, the light-emitting layers 506R, 506G, 506B, and the electron transport layer 507 are organic layers. In this embodiment, the light-emitting layer 506R is a red-emitting organic EL layer, the light-emitting layer 506G is a green-emitting organic EL layer, and the light-emitting layer 506B is a blue-emitting organic EL layer. The light-emitting layers 506R, 506G, and 506B are formed in patterns corresponding to the red, green, and blue-emitting light-emitting elements (sometimes described as organic EL elements), respectively.

[0054] Furthermore, the first electrode 504 is formed separately for each light-emitting element. The hole transport layer 505, the electron transport layer 507, and the second electrode 508 may be formed in common for multiple light-emitting elements 502R, 502G, and 502B, or they may be formed for each light-emitting element. In addition, an insulating layer 509 is provided between the first electrode 504 and the second electrode 508 to prevent short circuits caused by foreign matter. Furthermore, since the organic EL layer deteriorates due to moisture and oxygen, a protective layer 510 is provided to protect the organic EL element from moisture and oxygen.

[0055] In Figure 8(b), the hole transport layer 505 and the electron transport layer 507 are shown as a single layer, but depending on the structure of the organic EL display element, they may be formed as multiple layers including a hole blocking layer and an electron blocking layer. Furthermore, a hole injection layer having an energy band structure that allows for smooth injection of holes from the first electrode 504 to the hole transport layer 505 can be formed between the first electrode 504 and the hole transport layer 505. Similarly, an electron injection layer can be formed between the second electrode 508 and the electron transport layer 507.

[0056] Next, we will specifically describe an example of a manufacturing method for an organic EL display device.

[0057] First, a circuit (not shown) for driving the organic EL display device and a substrate (mother glass) 503 on which the first electrode 504 is formed are prepared.

[0058] An acrylic resin is formed on a substrate 503 on which the first electrode 504 is formed by spin coating. The acrylic resin is then patterned by lithography so that an opening is formed in the area where the first electrode 504 is formed, thereby forming an insulating layer 509. This opening corresponds to the light-emitting region where the light-emitting element actually emits light.

[0059] A substrate 503 patterned with an insulating layer 509 is placed on a substrate carrier on which an adhesive member is arranged. The substrate 503 is held in place by the adhesive member. It is then transported to a first organic material deposition apparatus, inverted, and a hole transport layer 505 is deposited as a common layer on the first electrode 504 of the display area. The hole transport layer 505 is deposited by vacuum deposition. In practice, since the hole transport layer 505 is formed to a size larger than the display area 501, a high-resolution mask is not required.

[0060] Next, the substrate 503, on which the hole transport layer 505 has been formed, is brought into a second organic material deposition apparatus. The substrate and the mask are aligned, the substrate is placed on the mask, and a red light-emitting layer 506R is deposited on the portion of the substrate 503 where the red light-emitting elements are to be placed.

[0061] Similar to the deposition of the light-emitting layer 506R, a light-emitting layer 506G that emits green light is deposited using a third organic material deposition apparatus, and then a light-emitting layer 506B that emits blue light is deposited using a fourth organic material deposition apparatus. After the deposition of the light-emitting layers 506R, 506G, and 506B is completed, an electron transport layer 507 is deposited over the entire display area 501 using a fifth deposition apparatus. The electron transport layer 507 is formed as a common layer for the three color light-emitting layers 506R, 506G, and 506B.

[0062] The substrate, with the electron transport layer 507 formed on it, is moved using a metallic vapor deposition material deposition apparatus to deposit the second electrode 508.

[0063] The material is then moved to a plasma CVD apparatus to deposit a protective layer 510, completing the deposition process on the substrate 503. After inversion, the adhesive material is peeled off the substrate 503, separating it from the substrate carrier. The organic EL display device 500 is then completed after cutting.

[0064] From the time the substrate 503, which has the insulating layer 509 patterned on it, is brought into the film deposition apparatus until the deposition of the protective layer 510 is completed, exposure to an atmosphere containing moisture or oxygen may cause the light-emitting layer, which is made of organic EL material, to deteriorate due to moisture or oxygen. Therefore, the loading and unloading of substrates between film deposition apparatuses is carried out under a vacuum atmosphere or an inert gas atmosphere.

[0065] (others) In the above embodiment, the case where the film deposition source is an evaporation source was described. However, the film deposition source may also be a sputtering cathode for film deposition by sputtering.

[0066] Furthermore, in the above embodiment, a configuration was shown in which the evaporation source 100 and the film deposition amount measuring device 200 are fixed inside the chamber 10. Generally, such a configuration is adopted in in-line type film deposition apparatus. In such a configuration, a shutter 20 is provided so that when replacing the substrate S, the film deposition material does not fly to the position where the substrate S is placed, while allowing the film deposition material to adhere to the quartz oscillator 222 provided in the film deposition amount measuring device 200.

[0067] In contrast, in a cluster-type film deposition apparatus, the evaporation source, which serves as the film deposition source, is configured to be movable. When the evaporation source is in a predetermined standby position, the film deposition material released from the evaporation source does not fly to the position where the substrate is placed. Therefore, the shutter 20 described above is unnecessary. This point will be explained with reference to Figure 9. Figure 9 is a schematic diagram of a film deposition apparatus according to another embodiment of the present invention, and shows the main components of the film deposition apparatus in a simplified manner.

[0068] The film deposition apparatus 1X comprises a chamber 10 configured to be in a near-vacuum state (reduced pressure atmosphere) by a vacuum pump, and an evaporation source 100X, which serves as a film deposition source, located inside the chamber 10. The configuration of the evaporation source 100X is the same as that of the evaporation source 100 in the above embodiment, so its description will be omitted. In this embodiment, the evaporation source 100X is configured to be able to reciprocate along a rail 150. As shown in Figure 9, when the evaporation source 100X is in the standby position on the right side of the figure, even if film deposition material is released from the evaporation source 100X, the film deposition material will not adhere to the substrate S. When film deposition is performed on the substrate S via a mask M, the evaporation source 100X is moved along the rail 150 while film deposition is performed. The evaporation source 100X is provided with a shutter 130, which is configured to switch between releasing and blocking the film deposition material from the evaporation source 100X.

[0069] In this embodiment, the film deposition amount measuring device 200X is fixed to the evaporation source 100X. As a result, the film deposition amount measuring device 200X moves together with the evaporation source 100X. The configuration of the film deposition amount measuring device 200X is the same as that of the film deposition amount measuring device 200 in the above embodiment, so its explanation is omitted. With the above configuration, during film deposition, Furthermore, even when the evaporation source 100X is in standby position, the film deposition material can be attached to the quartz oscillator 222 (not shown in Figure 9) provided in the film deposition amount measuring device 200X. In the film deposition apparatus 1X configured as described above, the film deposition amount measuring method and film deposition method shown in the above embodiment can be applied, and the same effects as in the above embodiment can be obtained. [Explanation of Symbols]

[0070] 1…Film deposition apparatus 10…Chamber 100…Evaporation source 200…Film deposition amount measuring device 210…Main apparatus body 220…Monitor head 221…Aperture 222…Crystal oscillator 223…Crystal holder 227…External resonator 230…Shutter 231…Aperture 300…Control device

Claims

1. A control device comprising a control unit for controlling a film deposition amount measuring device for measuring the amount of film deposited on a substrate by a film deposition source under a reduced pressure atmosphere in a film deposition apparatus, using a plurality of crystal oscillators, including at least a first crystal oscillator and a second crystal oscillator, in sequence, The film deposition amount measuring device is equipped with a plurality of quartz crystal oscillators, and the control unit controls the film deposition amount measuring device so that the quartz crystal oscillator used for measurement can be changed. The control unit, In the first period, in order to sequentially measure the amount of film deposited on multiple substrates using the first quartz oscillator, the film deposition amount measuring device is controlled so that the film deposition material adheres to the first quartz oscillator. From the end of the first period until the start of a second period which is longer than the first period, the measurement of the film deposition amount by the first quartz oscillator is suspended, and the film deposition amount measuring device is controlled so that the film deposition material does not adhere to the first quartz oscillator. During the third period between the end of the first period and the start of the second period, the film deposition amount measuring device is controlled so that the film deposition material adheres to the second quartz oscillator in order to sequentially measure the amount of film deposition on multiple substrates using the second quartz oscillator. During the second period, in order to sequentially measure the amount of film deposited on multiple substrates using the first quartz crystal oscillator, the film deposition amount measuring device is controlled so that the film deposition material adheres to the first quartz crystal oscillator. In measuring the amount of film deposited on the first substrate during the second period using the first quartz oscillator, a pause period is set to suspend the measurement of the amount of film deposited using the first quartz oscillator so that the time required for the measurement results to stabilize is shorter than the time required for the replacement of the first substrate. A control device for measuring the amount of film deposition, characterized by the above.

2. The control unit, Between the end of the third period and the start of the fourth period, in order to suspend the measurement of the film deposition amount by the second quartz oscillator, the film deposition material is prevented from adhering to the second quartz oscillator. The film deposition amount measuring device is controlled by During the fourth period, which is longer than the third period, the film deposition amount measuring device is controlled so that the film deposition material adheres to the second quartz oscillator in order to sequentially measure the amount of film deposition on multiple substrates using the second quartz oscillator. A control device for a film deposition amount measuring apparatus according to feature 1.

3. The fourth period includes at least the period following the end of the second period. A control device for a film deposition amount measuring apparatus according to feature 2.

4. The length of the first period and the length of the third period are equal, The length of the second period and the length of the fourth period are equal. A control device for a film deposition amount measuring apparatus according to any one of claims 2 to 3.

5. The control unit, Between the end of the first period and the start of the second period, the film deposition amount measuring device is controlled so that the film deposition material adheres to the other quartz crystal resonator in order to sequentially measure the film deposition amount on multiple substrates using a quartz crystal resonator other than the first and second quartz crystal resonators among the multiple quartz crystal resonators. A control device for a film deposition amount measuring apparatus according to any one of claims 1 to 4.

6. The device for measuring the amount of film deposited is, Equipped with a shutter having an opening, The shutter exposes the quartz crystal oscillator used for measuring the amount of film deposition from the film deposition source through the opening, and shields the quartz crystal oscillator that is not being measured from the film deposition source. A control device for a film deposition amount measuring apparatus according to any one of claims 1 to 5.

7. Before measuring the amount of film deposition, the film deposition material is pre-attached to the multiple quartz oscillators. A control device for a film deposition amount measuring apparatus according to any one of claims 1 to 6.

8. The replacement intervals for the substrates to be deposited are all set to be the same. The replacement of the quartz crystal oscillator used to measure the amount of film deposition by the film deposition amount measuring device is performed during the replacement period. A control device for a film deposition amount measuring apparatus according to any one of claims 1 to 7.

9. A film deposition source for depositing a film onto a substrate, A control device for a film deposition amount measuring apparatus according to any one of claims 1 to 8, A film deposition apparatus characterized by comprising the following features.

10. A method for measuring the amount of film deposited on a substrate by a film deposition source in a film deposition apparatus under a reduced pressure atmosphere, using a plurality of quartz oscillators, including at least a first quartz oscillator and a second quartz oscillator, in sequence, During the first period, the amount of film deposited on multiple substrates using the first quartz oscillator was measured. After the first period ends, a second period, which is longer than the first period, begins. Until then, the measurement of the film deposition amount by the first quartz oscillator will be suspended. During the third period between the end of the first period and the start of the second period, the amount of film deposited on multiple substrates using at least the second quartz oscillator is measured. During the second period, the amount of film deposited on multiple substrates using the first quartz oscillator is measured. In measuring the amount of film deposited on the first substrate during the second period using the first quartz oscillator, a pause period is set to suspend the measurement of the amount of film deposited using the first quartz oscillator so that the time required for the measurement results to stabilize is shorter than the time required for the replacement of the first substrate. A method for measuring the amount of film deposited, characterized by the features described above.

11. A step of measuring the amount of film deposited by the film deposition amount measurement method described in claim 10, The process includes a step of forming a film on a substrate. A film formation method characterized by the following:

12. A method for manufacturing an electronic device, characterized by manufacturing an electronic device by the film formation method described in claim 11.

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